GaN-based semiconductor laser element

Abstract

The invention discloses a GaN-based semiconductor laser element which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, spin-orbit coupling layers are arranged in the lower limiting layer and the lower waveguide layer, and the spin-orbit coupling layers are designed to be used for regulating and controlling phase-locked laser response and near-field beam guidance. Mode competition is suppressed, the laser suppression ratio is improved, light field dissipation is reduced, coherence and mode gain of laser are improved, the line width of the laser is reduced, and a light beam quality factor is improved; by designing conduction band effective state density distribution, electron affinity distribution and electron effective mass distribution of the spin-orbit coupling layer, a quantum Hall system with relatively strong net spin density and super-strong second-order nonlinear Hall effect is formed, nonlinear optical polarizability is enhanced, population distribution inversion of the active layer is accelerated, and the quantum Hall effect is improved. The active layer state density is enhanced to improve spontaneous radiation and stimulated radiation, and the lasing power and slope efficiency of the laser element are improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a GaN-based semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation from carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The current density of the laser is KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect. 3) Light-emitting diodes The tube spontaneously radiates, without any external influence, and it is incoherent light that transitions from high energy level to low energy level, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in energy levels of the electron transition, producing photons and induced photons that are completely coherent light; 4) Different principles: Under the action of external voltage, the light-emitting diode produces radiation recombination and luminescence when electron holes transition to the quantum well or pn junction, while the laser needs the lasing conditions to be met before it can be lased. The carrier inversion distribution in the active area must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, meets the threshold condition so that the gain is greater than the loss, and finally outputs the laser.

[0004] Nitride semiconductor lasers have the following problems: 1) The optical waveguide absorption loss is high. Intrinsic carbon impurities in p-type semiconductors will compensate for acceptors and destroy p-type, etc. The ionization rate of p-type doping is low. A large number of unionized Mg acceptor impurities will cause internal optical losses to increase. In addition, the refractive index of the laser is dispersed. The high concentration of carrier concentration fluctuates and affects the refractive index of the active layer. The confinement factor decreases with increasing wavelength, resulting in a decrease in the mode gain of the laser. 2) The thickness of the lower confinement layer increases, which can reduce the refractive index of the confinement layer. However, the increase in the thickness of the lower confinement layer will limit the range of component regulation, and it is easy to cause cracking, bending and quality degradation. At the same time, the light field is dissipated, and the light field mode leaks to the substrate to form a standing wave, which will lead to low substrate mode suppression efficiency and poor far-field image FFP quality. 3) The step difference of the laser valence band increases, the hole transport in the quantum well is more difficult, the carrier injection is uneven, and the gain is uneven. After the laser is lased, the carrier concentration in the multi-quantum well active region is saturated, the bipolar conductivity effect is weakened, and the series resistance of the laser increases, resulting in an increase in the laser voltage.

[0005] Therefore, the present invention provides a GaN-based semiconductor laser element for solving the problems set forth in the above-mentioned background art. Summary of the invention

[0006] In view of the problems raised by the above background technology, the purpose of the present invention is to provide a GaN-based semiconductor laser element.

[0007] In order to achieve the above technical objectives, the technical solution adopted by the present invention is as follows:

[0008] A GaN-based semiconductor laser element comprises a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer, wherein a spin-orbit coupling layer is arranged in the lower confinement layer and the lower waveguide layer.

[0009] It is further defined that the spin-orbit coupling layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, Co 3 O 4 , Mn 3 O 4 、LaBr 2 ,La 2 Br 5Sc 7 Cl 10 、Bi 2 Any one or any combination of LiN.

[0010] It is further defined that the In element of the spin-orbit coupling layer is distributed in a curve shape in the function, specifically, in the function y=A+B*e x / cosx is distributed in a curved shape in the third quadrant;

[0011] The In element concentration of the lower confinement layer is ≤ the In element concentration of the spin-orbit coupling layer ≤ the In element concentration of the lower waveguide layer.

[0012] It is further defined that the In / H elements of the spin-orbit coupling layer are distributed in a curve shape in the function, specifically, in a curve shape in the fourth quadrant of the function y=C+D*x / lnx;

[0013] The In / H element ratio of the lower confinement layer is ≤ the In / H element ratio of the spin-orbit coupling layer ≤ the In / H element ratio of the lower waveguide layer.

[0014] It is further defined that the conduction band effective state density of the spin-orbit coupling layer is distributed in a curve shape in the function, specifically, in the function y=E+F*e x / x 2 In the second quadrant, the distribution is in a curved shape;

[0015] The conduction band effective state density of the lower waveguide layer is ≤ the conduction band effective state density of the spin-orbit coupling layer ≤ the conduction band effective state density of the lower confinement layer.

[0016] It is further defined that the electron affinity of the spin-orbit coupling layer is distributed in a curve shape in the function, specifically, in the function y=G+H*e x / lnx is distributed in a curved shape;

[0017] The electron affinity of the lower confinement layer is ≤ the electron affinity of the spin-orbit coupling layer ≤ the electron affinity of the lower waveguide layer.

[0018] It is further defined that the elastic coefficient of the spin-orbit coupling layer is distributed in a curve shape in the function, specifically, in the function y=J+K*x 2 / e x The distribution is in a curved shape;

[0019] The elastic coefficient of the lower waveguide layer is ≤ the elastic coefficient of the spin-orbit coupling layer ≤ the elastic coefficient of the lower confinement layer.

[0020] It is further defined that the electron effective mass of the spin-orbit coupling layer is distributed in a curve shape in the function, specifically, in the function y=L+M*e x / x 2 In the second quadrant, the distribution is in a curved shape;

[0021] The electron effective mass of the lower waveguide layer is ≤ the electron effective mass of the spin-orbit coupling layer ≤ the electron effective mass of the lower confinement layer.

[0022] It is further defined that the thermal expansion coefficient of the spin-orbit coupling layer is distributed in a curve shape in the function, specifically, in the function y=N+P*xe x The distribution is in a curve;

[0023] The thermal expansion coefficient of the lower waveguide layer is ≤ the thermal expansion coefficient of the spin-orbit coupling layer ≤ the thermal expansion coefficient of the lower confinement layer.

[0024] It is further defined that C≤A, L≤N≤G≤J≤E;

[0025] The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, The thickness of the well layer is 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness of the barrier layer is 10 to 200 angstroms;

[0026] The lower limiting layer, the lower waveguide layer, the upper waveguide layer and the upper limiting layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , any one or any combination of BN;

[0027] The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0028] Beneficial effects of the present invention:

[0029] The spin-orbit coupling layer design of this scheme, in which the In element distribution and the In / H element distribution are proportional, is used to regulate the phase-locked laser response and near-field beam guidance, suppress mode competition, improve the laser suppression ratio and reduce the light field dissipation, improve the coherence and mode gain of the laser, reduce the line width of the laser and improve the beam quality factor; by designing the conduction band effective state density distribution, electron affinity energy distribution and electron effective mass distribution of the spin-orbit coupling layer, a quantum Hall system with a strong net spin density and an ultra-strong second-order nonlinear Hall effect is formed, the nonlinear optical polarizability is enhanced, the active layer resonant cavity is coupled to produce asymmetric exchange nonreciprocal coupling, and the regulation Phase-locked laser response and near-field beam guiding accelerate the inversion of the particle number distribution in the active layer, and enhance the state density of the active layer to improve spontaneous radiation and stimulated radiation, thereby reducing the excitation threshold of the laser element, improving the local confinement factor of the light field, and improving the lasing power and slope efficiency of the laser element; by designing the thermal expansion coefficient distribution and elastic coefficient distribution of the spin-orbit coupling layer, the interface between the lower confinement layer and the lower waveguide layer of the active layer is induced to form a skyrmion state with a singular topological charge, generating a ring-shaped spin-orbit coupled quantum gas and spin splitting, inducing a higher electron filling rate and conductivity, improving the stimulated radiation efficiency and optical power, and reducing the series resistance and voltage of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The present invention can be further illustrated by the non-limiting examples given in the accompanying drawings;

[0031] Figure 1 A schematic structural diagram of a GaN-based semiconductor laser element embodiment of the present invention;

[0032] Figure 2 This is a graph of a GaN-based semiconductor laser element embodiment of the present invention.

[0033] The main component symbols are explained as follows: substrate 100; lower confinement layer 101; lower waveguide layer 102; active layer 103; upper waveguide layer 104, upper confinement layer 105, spin-orbit coupling layer 106. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the present invention, the technical solution of the present invention is further described below in conjunction with the accompanying drawings and embodiments. The technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention.

[0035] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0036] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in the field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0037] Embodiment 1, as Figure 1As shown, a GaN-based semiconductor laser element of the present invention includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105, characterized in that a spin-orbit coupling layer 106 is provided in the lower confinement layer 101 and the lower waveguide layer 102.

[0038] Preferably, the spin-orbit coupling layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, Co 3 O 4 , Mn 3 O 4 、LaBr 2 ,La 2 Br 5 Sc 7 Cl 10 、Bi 2 Any one or any combination of LiN.

[0039] Preferably, the In element of the spin-orbit coupling layer 106 is distributed in a curve shape in the function, specifically, in the function y=A+B*e x / cosx is distributed in a curved shape in the third quadrant;

[0040] The In element concentration of the lower confinement layer 101 is ≤ the In element concentration of the spin-orbit coupling layer 106 ≤ the In element concentration of the lower waveguide layer 102 .

[0041] Preferably, the In / H elements of the spin-orbit coupling layer 106 are distributed in a curve shape in the function, specifically, in a curve shape in the fourth quadrant of the function y=C+D*x / lnx;

[0042] The In / H element ratio of the lower confinement layer 101 ≤ the In / H element ratio of the spin-orbit coupling layer 106 ≤ the In / H element ratio of the lower waveguide layer 102 .

[0043] Preferably, the conduction band effective state density of the spin-orbit coupling layer 106 is distributed in a curve shape in the function. Specifically, in the function y=E+F*e x / x 2 In the second quadrant, the distribution is in a curved shape;

[0044] The conduction band effective state density of the lower waveguide layer 102 is ≤ the conduction band effective state density of the spin-orbit coupling layer 106 ≤ the conduction band effective state density of the lower confinement layer 101 .

[0045] Preferably, the electron affinity of the spin-orbit coupling layer 106 is distributed in a curve shape in the function. Specifically, in the function y=G+H*e x / lnx is distributed in a curved shape;

[0046] The electron affinity of the lower confinement layer 101 is ≤ the electron affinity of the spin-orbit coupling layer 106 ≤ the electron affinity of the lower waveguide layer 102 .

[0047] Preferably, the elastic coefficient of the spin-orbit coupling layer 106 is distributed in a curve shape in the function. Specifically, in the function y=J+K*x 2 / e x The distribution is in a curved shape;

[0048] The elastic coefficient of the lower waveguide layer 102 is ≤ the elastic coefficient of the spin-orbit coupling layer 106 ≤ the elastic coefficient of the lower confinement layer 105 .

[0049] Preferably, the electron effective mass of the spin-orbit coupling layer 106 is distributed in a curve shape in the function. Specifically, in the function y=L+M*e x / x 2 In the second quadrant, the distribution is in a curved shape;

[0050] The electron effective mass of the lower waveguide layer 102 ≤ the electron effective mass of the spin-orbit coupling layer 106 ≤ the electron effective mass of the lower confinement layer 101 .

[0051] Preferably, the thermal expansion coefficient of the spin-orbit coupling layer 106 is distributed in a curve shape in the function. Specifically, in the function y=N+P*xe x The distribution is in a curve;

[0052] It should be noted that A, B, C, D, E, F, G, H, J, K, L, M, N, and P in the above functions can be any values.

[0053] The thermal expansion coefficient of the lower waveguide layer 102 is ≤ the thermal expansion coefficient of the spin-orbit coupling layer 106 ≤ the thermal expansion coefficient of the lower confinement layer 101 .

[0054] Preferably, C≤A, L≤N≤G≤J≤E;

[0055] The active layer 103 is a periodic structure consisting of a well layer and a barrier layer, the period number is 1, the well layer is InGaN, the thickness of the well layer is 10 angstroms, the barrier layer is GaN, and the thickness of the barrier layer is 10 angstroms;

[0056] The lower confinement layer 101 is AlGaN, the lower waveguide layer 102 is a GaN / InGaN composite structure, the upper waveguide layer 104 is InGaN, and the upper confinement layer 105 is a composite structure of AlGaN and GaN;

[0057] The substrate 100 is a GaN single crystal substrate.

[0058] Embodiment 2:

[0059] The similarities between the second embodiment and the first embodiment are not repeated here. The difference between the second embodiment and the first embodiment is that:

[0060] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2 O3, any one or any combination of BN, the thickness of the well layer is 120 angstroms, and the barrier layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, any one or any combination thereof, and the thickness of the barrier layer is 200 angstroms.

[0061] Embodiment three:

[0062] The similarities between the third embodiment and the first embodiment are not repeated here. The differences between the third embodiment and the first embodiment are as follows:

[0063] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 2, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , any one or any combination of BN, the thickness of the well layer is 60 angstroms, and the barrier layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, any one or any combination thereof, and the thickness of the barrier layer is 100 angstroms.

[0064] The following table is a comparison table of the conventional laser and the laser of the present invention, including threshold current, beam quality factor, optical field local confinement factor, slope efficiency, optical power and voltage:

[0065] The threshold current of the traditional laser is 670mA, while the threshold current of the laser of the present invention is 410mA, which is 39% lower than that of the traditional laser; the beam quality factor of the traditional laser is 1.56M 2 The beam quality factor of the laser of the present invention is 1.03M 2 ; Compared with the traditional laser, it increases by 51%; the local confinement factor of the light field of the traditional laser is 1.60%, and the local confinement factor of the light field of the laser of the present invention is 2.42%, which increases by 51% compared with the traditional laser;

[0066] The slope efficiency of the traditional laser is 1.66W / A, and the slope efficiency of the laser of the present invention is 2.43W / A, which is 46% higher than that of the traditional laser; the optical power of the traditional laser is 4.8W, and the optical power of the laser of the present invention is 7.5W, which is 56% higher than that of the traditional laser; the voltage of the traditional laser is 4.2V, and the voltage of the laser of the present invention is 3.95V, which is 6% lower than that of the traditional laser.

[0067] project Conventional laser Laser of the present invention Range of change Threshold current (mA) 670 410 -39％ <![CDATA[Beam quality factor M 2 > 1.56 1.03 51％ Light field local limitation factor 1.60％ 2.42％ 51％ Slope efficiency (W / A) 1.66 2.43 46％ Optical power(W)@3A 4.8 7.5 56％ Voltage(V)@3A 4.2 3.95 -6％

[0068] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A GaN-based semiconductor laser element, comprising a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104) and an upper confinement layer (105), characterized in that: A spin-orbit coupling layer (106) is provided in the lower confinement layer (101) and the lower waveguide layer (102).

2. A GaN-based semiconductor laser element according to claim 1, characterized in that: The spin-orbit coupling layer (106) is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlIn P, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, Co3O4, Mn3O4, LaBr2, La2Br5, Sc7Cl 10 , Bi2LiN or any combination thereof.

3. A GaN-based semiconductor laser element according to claim 1, characterized in that: The In element of the spin-orbit coupling layer (106) is distributed in a curve shape in the function, specifically, in the function y=A+B*e x / cosx is distributed in a curved shape in the third quadrant; The In element concentration of the lower confinement layer (101) is ≤ the In element concentration of the spin-orbit coupling layer (106) ≤ the In element concentration of the lower waveguide layer (102).

4. A GaN-based semiconductor laser element according to claim 1, characterized in that: The In / H elements of the spin-orbit coupling layer (106) are distributed in a curve shape in the function, specifically, in the fourth quadrant of the function y=C+D*x / lnx; The In / H element ratio of the lower confinement layer (101) is ≤ the In / H element ratio of the spin-orbit coupling layer (106) ≤ the In / H element ratio of the lower waveguide layer (102).

5. A GaN-based semiconductor laser element according to claim 1, characterized in that: The conduction band effective state density of the spin-orbit coupling layer (106) is distributed in a curve shape in the function. Specifically, in the function y=E+F*e x / x 2 In the second quadrant, the distribution is in a curved shape; The conduction band effective state density of the lower waveguide layer (102) is less than or equal to the conduction band effective state density of the spin-orbit coupling layer (106) and less than or equal to the conduction band effective state density of the lower confinement layer (101).

6. A GaN-based semiconductor laser element according to claim 1, characterized in that: The electron affinity of the spin-orbit coupling layer (106) is distributed in a curve shape in the function. Specifically, in the function y=G+H*e x / lnx is distributed in a curved shape; The electron affinity of the lower confinement layer (101) is less than or equal to the electron affinity of the spin-orbit coupling layer (106) and less than or equal to the electron affinity of the lower waveguide layer (102).

7. A GaN-based semiconductor laser element according to claim 1, characterized in that: The elastic coefficient of the spin-orbit coupling layer (106) is distributed in a curve shape in the function. Specifically, in the function y=J+K*x 2 / e x The distribution is in a curved shape; The elastic coefficient of the lower waveguide layer (102) is ≤ the elastic coefficient of the spin-orbit coupling layer (106) ≤ the elastic coefficient of the lower confinement layer (105).

8. The GaN-based semiconductor laser element according to claim 1, characterized in that: The electron effective mass of the spin-orbit coupling layer (106) is distributed in a curve shape in the function. Specifically, in the function y=L+M*e x / x 2 In the second quadrant, the distribution is in a curved shape; The electron effective mass of the lower waveguide layer (102) is ≤ the electron effective mass of the spin-orbit coupling layer (106) ≤ the electron effective mass of the lower confinement layer (101).

9. The GaN-based semiconductor laser element according to claim 1, characterized in that: The thermal expansion coefficient of the spin-orbit coupling layer (106) is distributed in a curve shape in the function. Specifically, in the function y=N+P*xe x The distribution is in a curve; The thermal expansion coefficient of the lower waveguide layer (102) is ≤ the thermal expansion coefficient of the spin-orbit coupling layer (106) ≤ the thermal expansion coefficient of the lower confinement layer (101).

10. A GaN-based semiconductor laser element according to claims 2-9, characterized in that: Said C≤A, L≤N≤G≤J≤E; The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN , the thickness of the well layer is 10 to 120 angstroms, the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness of the barrier layer is 10 to 200 angstroms; The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; The substrate (100) comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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