Test method for identifying system-in-package device irradiation sensitive module

Abstract

The invention discloses a test method for identifying an irradiation sensitive module of a system-in-package device, and the method comprises the following steps: S1, carrying out a wide-energy-spectrum neutron irradiation test on a tested SiP device, and obtaining a single-particle upset cross section sigma i of each module in the tested SiP device; s2, calculating the atmospheric neutron single event effect soft error rate Ri of each module by using the atmospheric neutron environment flux of the real place; s3, calculating the sensitivity Pi according to the atmospheric neutron single event effect soft error rate of each module and the importance of each module in the SiP device; and S4, evaluating the atmosphere neutron irradiation reliability of the SiP device according to the obtained sensitivity data. According to the method, the atmosphere neutron irradiation reliability of the SiP device is judged through the sensitivity, the atmosphere neutron irradiation reliability of the device can be evaluated through the method, the time required by field experiments is saved, and designers are helped to more efficiently carry out anti-irradiation reinforcement on the device.

Description

Technical Field

[0001] The present disclosure relates to the technical field of electronic device reliability, and in particular to a test method for identifying a radiation sensitive module of a system-level packaged device. Background Art

[0002] There is a complex radiation environment composed of a large number of radiation particles in the earth's atmosphere. These radiation particles are mainly formed by the galactic cosmic rays in outer space and the solar cosmic rays ejected by the sun entering the earth's neutral atmosphere and interacting with N and O in the neutral atmosphere. They mainly include neutrons, protons, electrons, gamma rays, pions, muons, etc. Since neutrons are uncharged, have strong penetrating power (can pass through building shielding, aircraft shells, etc.) and have a high atmospheric content, the single particle effect caused by atmospheric neutrons incident on aviation and ground electronic systems has become a key potential factor threatening the safe operation of electronic equipment.

[0003] System-in-Package (SiP) devices refer to the integration of multiple electronic components or chips with different functions in one package, thus becoming a module with basic complete functions. It has the advantages of high integration, miniaturization, low power consumption, high reliability, and high efficiency. It is an emerging high-tech cross-disciplinary technology with broad application prospects in the fields of information, biology, aerospace, and military. SiP generally contains chips such as field programmable gate arrays (FPGAs) and digital signal processors (DSPs), including static random access memories (SRAMs), read-only memories (ROMs), FLASH, and other memories. The manufacturing processes of these chips and memories are generally different, so their sensitivity to neutron irradiation is also different. In practical applications, there will be problems of varying degrees. Accurately identifying the sensitive modules of the system is a key issue. Summary of the invention

[0004] The present disclosure provides a test method for identifying radiation sensitive modules of a system-level package device to solve one of the technical problems recognized by the inventor.

[0005] The present disclosure provides a test method for identifying a radiation sensitive module of a system-level package device, comprising the following steps:

[0006] S1. Carry out wide-spectrum neutron irradiation test on the SiP device under test to obtain the single-event upset cross section σ of each module inside the SiP device under test. i ;

[0007] S2. Use the atmospheric neutron environment flux at the actual location to calculate the atmospheric neutron single event effect soft error rate R of each module i ;

[0008] S3. Calculate the sensitivity P according to the atmospheric neutron single event effect soft error rate of each module and the importance of each module in the SiP device. i ;

[0009] S4. Evaluate the atmospheric neutron irradiation reliability of SiP devices based on the obtained sensitivity data.

[0010] Preferably, the single event upset cross section calculation formula in step S1 is: σ i =N i / F n ; In the formula, i is the number of each module in the SiP device, N i The number of single-event upsets of the i-th module, F n is the neutron injection.

[0011] Preferably, the atmospheric neutron single event effect soft error rate R in step S2 is i The calculation of includes the following steps:

[0012] S21. Calculate the atmospheric neutron environment flux f of the location to be tested by software;

[0013] S22. Calculate the single event upset soft error rate R of each module in the SiP device i , the calculation formula is: R i =f×σ i ×1024 2 ×10 9 .

[0014] Preferably, the sensitivity P in step S3 i The calculation of includes the following steps:

[0015] S31. Define the impact factor λ∈[0,1]. For modules in the SiP device where the single-particle upset has a small impact on the system, λ takes a small value, λ=0; for modules in the SiP device where the single-particle upset has a large impact on the system, λ takes a large value, λ=1;

[0016] S32, the sensitivity P i The calculation formula is: i =R i ×λ i .

[0017] Preferably, the atmospheric neutron irradiation reliability determination of the SiP device in step S4 comprises the following steps:

[0018] S41. Set a threshold value P t ;

[0019] S42, the sensitivity of each module in the SiP device Pi and threshold P t Compare, if one of the P i Greater than or equal to P t , the atmospheric neutron irradiation reliability of SiP devices is low; if all P i Less than P t , the atmospheric neutron irradiation reliability of SiP devices is high.

[0020] Preferably, the threshold value P t =0.5.

[0021] Preferably, for the sensitivity P i Greater than or equal to the threshold P t The modules are reinforced against radiation.

[0022] Preferably, for the module that has been reinforced against radiation, steps S1 to S4 are repeated to re-evaluate the atmospheric neutron irradiation reliability of the SiP device.

[0023] The beneficial effects of the present disclosure are mainly as follows: the present invention carries out a broadened energy spectrum neutron irradiation test on the SiP device under test, obtains the single particle flip cross section of each module, and then obtains the sensitivity of each module through a series of calculations, and judges the atmospheric neutron irradiation reliability of the SiP device by the sensitivity. This method can evaluate the atmospheric neutron irradiation reliability of the device, saves the time required for field experiments, and helps designers to more efficiently reinforce the device against radiation.

[0024] It should be understood that both the foregoing general description and the following specific embodiments are for the purpose of example and illustration and do not necessarily limit the present disclosure. The accompanying drawings, which are incorporated into and constitute a part of the specification, illustrate the subject matter of the present disclosure. At the same time, the specification and the drawings are used to explain the principles of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the specific embodiments of the present disclosure or the technical solutions in the prior art, the drawings required for use in the specific embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0026] Figure 1 A flowchart of the test method for identifying a radiation sensitive module of a system-level package device according to an embodiment of the present disclosure;

[0027] Figure 2 is the gas neutron single event effect soft error rate R of the embodiment of the present disclosure i Schematic diagram of the calculation steps;

[0028] Figure 3 is the sensitivity P of the embodiment of the present disclosure i Schematic diagram of the calculation steps;

[0029] Figure 4 A flowchart of the steps for determining the atmospheric neutron irradiation reliability of the SiP device according to the embodiment of the present disclosure. DETAILED DESCRIPTION

[0030] The technical solution of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments.

[0031] Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without making any creative work shall fall within the scope of protection of the present disclosure.

[0032] In the description of the present disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0033] In the description of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0034] Example

[0035] like Figure 1-4 As shown, this embodiment provides a test method for identifying a radiation sensitive module of a system-level package device, comprising the following steps:

[0036] S1. Carry out wide-spectrum neutron irradiation test on the SiP device under test to obtain the single-event upset cross section σ of each module inside the SiP device under test. i ;

[0037] Among them, the single-particle upset cross section calculation formula is: i =N i / F n; In the formula, i is the number of each module in the SiP device, which is set by the tester to distinguish different modules in the SiP device, N i The number of single-event upsets of the i-th module, F n is the neutron fluence (fluence: refers to the total number of particles incident per unit area). By calculation, the single event upset cross section σ of each module in the SiP device can be obtained. i Numeric value.

[0038] S2. Use the atmospheric neutron environment flux at the actual location to calculate the atmospheric neutron single event effect soft error rate R of each module i ;

[0039] Among them, environmental flux refers to: the number of incident particles per unit area and per unit time. Soft errors refer to: single particle upsets, single particle transient pulses, multi-bit upsets and other effects that will not cause hard damage to the device. Single event effects (SEE): refers to the effects produced by the electron-hole pairs generated by a single particle with a certain energy (including heavy ions, protons, neutrons, etc.) depositing energy in a semiconductor device, including single particle upsets, multi-bit upsets, single particle latches, single particle functional interruptions, single particle burnouts, single particle gate penetrations, single particle transient pulses, etc.

[0040] Specifically, the atmospheric neutron single event effect soft error rate R in step S2 is i The calculation of includes the following steps:

[0041] S21. Calculate the atmospheric neutron environment flux f of the location to be tested by software; wherein, the atmospheric neutron environment flux f can be calculated by EXPACS software in the prior art, and its specific calculation steps and principles are not described in detail here.

[0042] S22. Calculate the single event upset soft error rate R of each module in the SiP device i , the calculation formula is: R i =f×σ i ×1024 2 ×10 9 In the formula, i corresponds to different modules, R i The error rate is expressed in FIT / Mb. 1FIT represents 10 9 The device has an error every hour; f is the neutron flux in the environment, in cm -2 ·h -1 ; σ i is the single-particle upside-down cross section calculated above.

[0043] S3. Calculate the sensitivity P according to the atmospheric neutron single event effect soft error rate of each module and the importance of each module in the SiP device. i ;

[0044] Among them, the importance of each module in the SiP device can be judged based on the importance and calling frequency of the module in the SiP device. For example, for the memory, it is necessary to find out whether the module stores instruction codes. If the single particle effect causes an error in the instruction code, it will have a greater impact on the system than an error in the data code. It is also necessary to analyze the calling frequency of each module. Errors in modules with high calling frequencies are more likely to affect the system.

[0045] Among them, the sensitivity P i The calculation of includes the following steps:

[0046] S31. Define the impact factor λ∈[0,1]. For modules in the SiP device where the single-particle upset has a small impact on the system, λ takes a small value, λ=0; for modules in the SiP device where the single-particle upset has a large impact on the system, λ takes a large value, λ=1; when evaluating the sensitivity of each module inside the SiP device, it is necessary to evaluate the importance of each module in the SiP device. Here we define the impact factor λ∈[0,1]. Define the impact factor λ∈[0,1] to quantify the impact of the single-particle upset of the module on the system. For modules with less impact, λ takes a small value, the lowest being 0, that is, no impact; for modules with greater impact, λ takes a large value, the maximum being 1, that is, it will definitely cause serious impact. The specific impact of each module can be confirmed based on the actual circuit composition and experience.

[0047] S32, the sensitivity P i The calculation formula is: i =R i ×λ i By calculating the single-event upset soft error rate R of each module i and impact factor λ i Thus, the sensitivity P of each module is calculated i .

[0048] S4. Evaluate the atmospheric neutron irradiation reliability of SiP devices based on the obtained sensitivity data.

[0049] Among them, the reliability of the SiP device is determined by the module with the highest sensitivity among the modules inside the SiP device. The higher the sensitivity, the lower the reliability of the SiP device, and the lower the sensitivity, the higher the reliability of the SiP device.

[0050] Furthermore, the atmospheric neutron irradiation reliability determination of the SiP device in step S4 includes the following steps:

[0051] S41. Set a threshold value P t ;

[0052] S42, the sensitivity of each module in the SiP device P i and threshold P t Compare, if one of the P i Greater than or equal to P t , the atmospheric neutron irradiation reliability of SiP devices is low; if all P i Less than P t , the atmospheric neutron irradiation reliability of SiP devices is high.

[0053] In this embodiment, the threshold value P is set i =0.5, by taking the sensitivity P of each module in the SiP device i and threshold P t For comparison, if the sensitivity P i If the sensitivity P is greater than or equal to 0.5, the reliability is judged to be low. i Those less than 0.5 are judged to be highly reliable.

[0054] For sensitivity greater than or equal to the threshold P t For modules, designers can perform targeted radiation hardening to reduce the sensitivity of the module and improve the reliability of the entire SiP device.

[0055] Furthermore, for the modules that have been reinforced against radiation, steps S1 to S4 are repeated to re-evaluate the atmospheric neutron irradiation reliability of the SiP device until the sensitivity of all modules in the SiP device is lower than the threshold, thereby ensuring the reliability of the SiP device in use.

[0056] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A test method for identifying radiation sensitive modules of a system-level package device, characterized in that: The following steps are involved: S1. Carry out wide-spectrum neutron irradiation test on the SiP device under test to obtain the single-event upset cross section σ of each module inside the SiP device under test. i ; S2. Use the atmospheric neutron environment flux at the actual location to calculate the atmospheric neutron single event effect soft error rate R of each module i ; S3. Calculate the sensitivity P according to the atmospheric neutron single event effect soft error rate of each module and the importance of each module in the SiP device. i ; S4. Evaluate the atmospheric neutron irradiation reliability of SiP devices based on the obtained sensitivity data.

2. A test method for identifying radiation sensitive modules of system-level package devices according to claim 1, characterized in that: The single event upset cross section calculation formula in step S1 is: σ i =N i / F n ; In the formula, i is the number of each module in the SiP device, N i The number of single-event upsets of the i-th module, F n is the neutron injection.

3. A test method for identifying radiation sensitive modules of system-level package devices according to claim 1, characterized in that: The atmospheric neutron single event effect soft error rate R in step S2 i The calculation of includes the following steps: S21. Calculate the atmospheric neutron environment flux f of the location to be tested by software; S22. Calculate the single event upset soft error rate R of each module in the SiP device i , the calculation formula is: R i =f×σ i ×1024 2 ×10 9 .

4. A test method for identifying radiation sensitive modules of system-level package devices according to claim 1, characterized in that: In step S3, the sensitivity P i The calculation of includes the following steps: S31. Define the impact factor λ∈[0,1]. For modules in the SiP device where the single-particle upset has a small impact on the system, λ takes a small value, λ=0; for modules in the SiP device where the single-particle upset has a large impact on the system, λ takes a large value, λ=1; S32, the sensitivity P i The calculation formula is: i =R i ×λ i .

5. A test method for identifying radiation sensitive modules of a system-level package device according to claim 4, characterized in that: The atmospheric neutron irradiation reliability determination of the SiP device in step S4 includes the following steps: S41. Set a threshold value P t ; S42, the sensitivity of each module in the SiP device P i and threshold P t Compare, if one of the P i Greater than or equal to P t , the atmospheric neutron irradiation reliability of SiP devices is low; if all P i Less than P t , the atmospheric neutron irradiation reliability of SiP devices is high.

6. A test method for identifying radiation sensitive modules of a system-level package device according to claim 5, characterized in that: The threshold value P t =0.

5.

7. A test method for identifying radiation sensitive modules of a system-level package device according to claim 5, characterized in that: For the sensitivity P i Greater than or equal to the threshold P t The modules are reinforced against radiation.

8. A test method for identifying radiation sensitive modules of a system-level package device according to claim 7, characterized in that: For the module that has been reinforced against radiation, steps S1 to S4 are repeated to re-evaluate the atmospheric neutron irradiation reliability of the SiP device.

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