Intelligent electronic switch, integrated circuit chip, chip product and automobile

Abstract

The invention provides an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile, in the intelligent electronic switch, in a normal working mode, a logic control unit drives a main power switch to be turned on through a first driving unit, and in a bypass mode, the logic control unit drives the main power switch to be turned on through a second driving unit; the logic control unit controls the bypass switch to be turned on and turned off through the current-limiting driving unit and controls the main power switch to be turned off through the first driving unit; wherein the area occupied by the bypass switch is smaller than that occupied by the main power switch, the value of current flowing through the bypass switch in the bypass mode is smaller than or equal to a first current limiting value set by the current limiting driving unit, and the first current limiting value is smaller than the maximum value of current flowing through the main power switch in the normal working mode. In the scheme, the self power consumption of the intelligent electronic switch in the bypass mode is smaller than that of the intelligent electronic switch in the normal working mode, and the bypass loop and the main loop do not interfere with each other during operation, so that the performance stability and reliability of the intelligent electronic switch are ensured.

Description

Technical Field

[0001] The present application relates to the technical field of intelligent semiconductor switches, and in particular to an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile. Background Art

[0002] Smart electronic switches are usually used to couple loads with batteries. They are electronic components that control the on / off of load circuits. They are widely used in automotive electronics, industrial automation, medical equipment, and other fields. Due to the diverse types of loads they connect to and the harsh working environment, the application end has particularly high requirements for the reliability of smart electronic switches. Therefore, smart electronic switches are integrated with a variety of protection functions to improve their reliability.

[0003] In the prior art, when the intelligent electronic switch has a load current output, in order to ensure the reliability of the operation of the intelligent electronic switch, the driving circuit and the protection circuit integrated inside the intelligent electronic switch both work normally, which will cause the power consumption of the intelligent electronic switch to be relatively large, thereby causing the device using the intelligent electronic switch to have a problem of high power consumption. Summary of the invention

[0004] The present application provides an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile, so as to solve the problem of high power of the intelligent electronic switch.

[0005] In a first aspect, the present application provides an intelligent electronic switch, including a power supply terminal, a power ground terminal, a load output terminal, a switch circuit, and a control circuit; the power supply terminal and the power ground terminal are used to connect to a battery, and the load output terminal is used to connect to a load;

[0006] Wherein, the switch circuit includes a main power switch and a bypass switch, the control circuit includes a logic control unit, a first drive unit and a current limiting drive unit, the first end of the main power switch and the first end of the bypass switch are both connected to the power supply end or the power ground end, the second end of the main power switch and the second end of the bypass switch are both connected to the load output end, the control end of the main power switch is connected to the first drive unit, the control end of the bypass switch is connected to the current limiting drive unit, and the first drive unit and the current limiting drive unit are also connected to the logic control unit;

[0007] When the intelligent electronic switch operates in a normal working mode, the logic control unit drives the main power switch to turn on and conduct via the first driving unit; in the bypass mode, the logic control unit controls the bypass switch to turn on and conduct via the current limiting driving unit and controls the main power switch to turn off and conduct via the first driving unit; the area occupied by the bypass switch is smaller than the area occupied by the main power switch, and the current value flowing through the bypass switch in the bypass mode is less than or equal to the first current limiting value set by the current limiting driving unit, and the first current limiting value is less than the maximum current value flowing through the main power switch in the normal working mode.

[0008] Optionally, the intelligent electronic switch further includes an overcurrent protection unit connected to the logic control unit, the overcurrent protection unit is connected to a preset overcurrent protection threshold, and the overcurrent protection unit is further connected to a current sampling value, and the current sampling value is used to characterize a current value flowing through the main power switch;

[0009] In normal working mode, when the current sampling value is greater than the overcurrent protection threshold, the current flowing through the main power switch is greater than the first current limiting value and the overcurrent protection unit outputs an overcurrent signal to the first drive unit, and the first drive unit controls the main power switch to disconnect and cut off; in bypass mode, the overcurrent protection unit stops working.

[0010] Optionally, the intelligent electronic switch further includes a current limiting protection unit connected to the logic control unit, the current limiting protection unit is connected to a preset current limiting protection threshold, and the current limiting protection unit is further connected to a current sampling value, and the current sampling value is used to characterize a current value flowing through the main power switch;

[0011] In normal working mode, when the current sampling value is greater than the current limiting protection threshold, the current flowing through the main power switch is greater than the first current limiting value and the current limiting protection unit outputs a current limiting signal to the logic control unit, so that the logic control unit adjusts the size of the control signal output to the control end of the main power switch via the first driving unit to reduce the current flowing through the main power switch so that the current sampling value is less than or equal to the current limiting protection threshold; in bypass mode, the current limiting protection unit stops working.

[0012] Optionally, the intelligent electronic switch further includes a first over-temperature protection unit, a second over-temperature protection unit and a third over-temperature protection unit connected to the logic control unit;

[0013] The first over-temperature protection unit is connected to a preset first over-temperature protection threshold and a first temperature sampling value, and the first temperature sampling value is used to characterize the temperature of the main power switch; the second over-temperature protection unit is connected to a preset second over-temperature protection threshold and a second temperature sampling value, and the second temperature sampling value is used to characterize the temperature of the bypass switch; the third over-temperature protection unit is connected to a preset third over-temperature protection threshold and a temperature difference, and the temperature difference is the difference between the temperature sampling value of the main power switch and the ambient temperature;

[0014] In the normal working mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to work, when the first temperature sampling value is greater than the first over-temperature protection threshold, the first over-temperature protection unit outputs a first over-temperature signal, and / or, when the temperature difference is greater than the third over-temperature protection threshold, the third over-temperature protection unit outputs a first over-temperature signal, and the logic control unit controls the main power switch to be turned off via the first driving unit according to the first over-temperature protection signal;

[0015] In bypass mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to stop working and the second over-temperature protection unit to work. When the second temperature sampling value is greater than the second over-temperature protection threshold, the second over-temperature protection unit outputs a second over-temperature signal, so that the logic control unit controls the bypass switch to be turned off via the current limiting drive unit; wherein, the power consumption of the second over-temperature protection unit is less than the power consumption of the first over-temperature protection unit.

[0016] Optionally, the current limiting driving unit includes a transistor and a constant current source, and the transistor and the bypass switch are of the same type;

[0017] The transistor and the constant current source are connected to form a current limiting driving branch, one end of the current limiting driving branch is connected to one end of the bypass switch, the other end is connected to the power supply end or the power ground end, the control end is connected to the logic control unit, the drain of the transistor is connected to its control end and the control end of the bypass switch; in the bypass mode, the logic control unit controls the current limiting driving branch to be turned on so that the current limiting driving unit works, and the first current limiting value is related to the current value provided by the constant current source and the current mirror ratio of the transistor and the power switch.

[0018] As an example, the transistor and the bypass switch are both N-type switching tubes, one end of the constant current source is connected to the power supply end and the other end is connected to the drain of the transistor, the source of the transistor is connected to the source of the bypass switch and both are connected to the load output end or the power ground end.

[0019] As another example, the transistor and the bypass switch are both P-type switching tubes, one end of the constant current source is connected to the power supply ground terminal or the load output terminal and the other end is connected to the drain of the transistor, the source of the transistor and the source of the bypass switch are connected and are both connected to the power supply terminal or the load output terminal.

[0020] Optionally, the bypass switch includes a MOS transistor, and a ratio of the first current limiting value to the current value provided by the constant current source is equal to a ratio of a width-to-length ratio of the bypass switch to a width-to-length ratio of the transistor.

[0021] Optionally, in the normal operating mode, the main power switch tube is turned on and the main power switch tube operates in the linear resistance region; in the bypass mode, the bypass switch is turned on and the bypass switch operates in the saturation region.

[0022] Optionally, when the main power switch is an N-type switch tube, the first driving unit includes a boost module and a driving module, the boost module is connected to the power supply end of the driving module, and the boost module is used to make its output voltage greater than the voltage of the power supply end, so that the driving module drives the main power switch to turn on in the normal working mode.

[0023] In a second aspect, an embodiment of the present application provides an integrated circuit chip, comprising the intelligent electronic switch as described in the first aspect, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

[0024] In a third aspect, an embodiment of the present application provides a chip product, comprising the intelligent electronic switch as described in the first aspect, wherein components of the intelligent electronic switch other than a main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip;

[0025] Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

[0026] In a fourth aspect, an embodiment of the present application provides a chip product, comprising the intelligent electronic switch as described in the first aspect, wherein components of the intelligent electronic switch other than a main power switch and a bypass switch are located on a first integrated circuit chip, and the main power switch and the bypass switch are located on a second integrated circuit chip;

[0027] Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

[0028] In a fifth aspect, an embodiment of the present application provides an automobile, comprising the intelligent electronic switch as described in the first aspect, or the integrated circuit chip as described in the second aspect, or the chip product as described in the third aspect or the fourth aspect;

[0029] It also includes a battery, a load and a microcontroller; wherein the positive electrode of the battery is connected to the power supply terminal, the negative electrode of the battery is connected to the power ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power ground terminal or the power supply terminal, and the microcontroller is connected to the intelligent electronic switch.

[0030] The present application provides an intelligent electronic switch, an integrated circuit chip, a chip product and an automobile, wherein the control circuit of the intelligent electronic switch includes a logic control unit, a first drive unit and a current limiting drive unit, and the switch circuit includes a main power switch and a bypass switch. In a normal working mode, the logic control unit drives the main power switch to turn on and conduct via the first drive unit, and in a bypass mode, the logic control unit controls the bypass switch to turn on and conduct via the current limiting drive unit and controls the main power switch to turn off and conduct via the first drive unit; the area occupied by the bypass switch is smaller than the area occupied by the main power switch, and in the bypass mode, the current value flowing through the bypass switch is less than or equal to the first current limiting value set by the current limiting drive unit, and the first current limiting value is less than the maximum current value flowing through the main power switch in the normal working mode. In this way, when the vehicle is in parking mode and the load connected to the intelligent electronic switch is light, it does not need to provide a large load current and can work normally in the low current mode. Therefore, the intelligent electronic switch can be controlled to work in the bypass mode. At this time, the current limiting drive unit can also drive the power switch to work. Since the power consumption of the current limiting drive unit when working is less than the power consumption of the first drive unit when working, the self-consumption of the intelligent electronic switch in the bypass mode is less than the self-consumption of the intelligent electronic switch in the normal working mode. Moreover, in this embodiment, the bypass circuit and the main circuit do not interfere with each other during operation, and the newly added bypass circuit will not affect the original main circuit, thereby ensuring the performance stability and reliability of the intelligent electronic switch. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0032] Figure 1This is a schematic diagram of a circuit module of an electronic device provided in the first embodiment of the present application;

[0033] Figure 2 This is a schematic diagram of a circuit module of an electronic device provided in the second embodiment of the present application;

[0034] Figure 3 This is a schematic diagram of a circuit module of an electronic device provided in the third embodiment of the present application;

[0035] Figure 4 is a schematic diagram of a circuit module of an electronic device provided in a fourth embodiment of the present application;

[0036] Figure 5 This is a schematic diagram of a circuit structure of an electronic device provided in the fifth embodiment of the present application.

[0037] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] The terms "including" and "having" and any variations thereof appearing in the specification, claims and drawings of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or modules is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.

[0040] In addition, the terms "first", "second" and "third" are used to distinguish different objects, rather than to describe a specific order. The electrical connection of the present application includes direct electrical connection and indirect electrical connection. Indirect electrical connection means that other electronic components, pins, etc. may exist between the two electrically connected components. The XX end mentioned in the present application may be an actual terminal, or it may not be an actual terminal, for example, it is only one end of a component or one end of a wire. The "and / or" mentioned in the present application includes three situations. For example, A and / or B includes three situations: A, B, A and B.

[0041] With the development of semiconductor technology, relays used to turn on or off load paths are gradually replaced by intelligent electronic switches, which can couple the load with the battery and have one or more diagnostic capabilities and protection features. For example, when the intelligent electronic switch is overheated, overloaded or short-circuited, the power switch inside the intelligent electronic switch will be turned off, so that the path between the battery and the load is disconnected, thereby improving the reliability of the intelligent electronic switch.

[0042] It is understandable that in actual applications, the load types of intelligent electronic switches are diverse (for example, inductors, capacitors, resistors, or a combination of the three) and the working environment is harsh, so the application end will have particularly high requirements for its reliability, which requires the intelligent electronic switch to work in a normal working mode when there is a load current output, and the drive unit used to drive the power switch on or off also works normally. Since the drive unit needs to provide a larger driving capability according to the load requirements so that the intelligent electronic switch can provide a wider output current range, the power consumption of the drive unit is usually high, which leads to the problem of relatively large power consumption of the intelligent electronic switch. In particular, when there are many similar intelligent electronic switches in an electronic device such as a car, the overall power consumption of the car will be relatively large, which will accelerate the consumption of the battery equipped in the car, resulting in a significant shortening of the battery life.

[0043] In view of the above problems, the inventors of the present application have proposed an intelligent electronic switch after long-term research based on the working characteristics of the intelligent electronic switch. The control circuit of the intelligent electronic switch includes a logic control unit, a first drive unit and a current limiting drive unit, and the switch circuit includes a main power switch and a bypass switch. Therefore, when the intelligent electronic switch works in a normal working mode, the logic control unit drives the main power switch to turn on and conduct via the first drive unit. In the bypass mode, the logic control unit controls the bypass switch to turn on and conduct via the current limiting drive unit and controls the main power switch to turn off and cut off via the first drive unit; the area occupied by the bypass switch is smaller than the area occupied by the main power switch, and the current value flowing through the bypass switch in the bypass mode is less than or equal to the first current limiting value set by the current limiting drive unit, and the first current limiting value is less than the maximum current value flowing through the main power switch in the normal working mode. In this way, the power consumption of the current limiting drive unit when it is working is less than the power consumption of the first drive unit when it is working, so that the self-consumption of the intelligent electronic switch in the bypass mode is less than its self-consumption in the normal working mode. Moreover, in this embodiment, the bypass circuit and the main circuit do not interfere with each other during operation, and the newly added bypass will not affect the original main circuit, so the performance is more stable and the reliability is high.

[0044] Optionally, the self-consumption of the intelligent electronic switch in normal working mode is usually at the milliampere level, while when it is in bypass mode, the self-consumption can be reduced to the microampere level, thereby reducing the power consumption of the intelligent electronic switch and increasing the standby time.

[0045] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0046] The present application embodiment provides an electronic device, the electronic device is, for example, a car, see Figure 1 , Figure 1 1 is a schematic diagram of a circuit module of an electronic device provided in the first embodiment of the present application. The electronic device includes a battery 10, a load 30, a microcontroller 40 and an intelligent electronic switch 20. Among them, the battery 10 is generally a storage battery, and the storage battery provides voltages such as 12V, 24V, 48V, 60V, or other voltages. Of course, the battery 10 can also be other types of batteries, such as lithium batteries, sodium batteries, etc. The load 30 includes at least one of a resistive load, an inductive load and a capacitive load. The resistive load is, for example, a seat adjustment device, an auxiliary heating device, a window heating device, a light emitting diode (LED), a rear lighting or other resistive loads. The inductive load is, for example, a pump, an actuator, a motor, an anti-lock braking system (ABS), an electronic braking system (EBS), a fan or other systems including an inductive load for one or more wiper systems. The capacitive load is, for example, a lighting element, such as a xenon arc lamp. The microcontroller 40 is connected to the intelligent electronic switch 20 for controlling the intelligent electronic switch 20.

[0047] Exemplarily, in practical applications, the intelligent electronic switch 20 includes a control circuit 21 and a switch circuit 22, so that the control circuit 21 can control the switch circuit 22 to work in different states according to an external signal, so that the intelligent electronic switch 20 works in different modes. For example, the intelligent electronic switch 20 can control the switch circuit 22 to turn on when receiving a turn-on control signal, and control the switch circuit 22 to turn off when receiving a turn-off control signal. Moreover, based on the switch state of the switch circuit 22 and the working state of the internal functional circuit, the working mode of the intelligent electronic switch 20 can be divided into a normal working mode, a bypass mode, a standby mode, and a sleep mode.

[0048] Among them, when the switch circuit 22 is in the on-state and the protection and diagnosis functional circuits in the intelligent electronic switch 20 are working normally, the intelligent electronic switch 20 is said to be working in the normal working mode or active mode (Active mode). Generally, in the normal working mode, the intelligent electronic switch 20 can provide a large load current according to the load demand. When the switch circuit 22 is in the on-state but the functional circuit integrated in the intelligent electronic switch 20 is not working or some modules in the functional circuit are not working, the intelligent electronic switch 20 is said to be working in the bypass mode (Bypass mode). Since the power consumed by the intelligent electronic switch 20 in the bypass mode is relatively low, the bypass mode can also be called a low power consumption mode. In the bypass mode, the load current provided by the intelligent electronic switch 20 is less than the load current provided when it is in the normal working mode. When the switch circuit 22 is in the off state but the functional circuits in the intelligent electronic switch 20 are in normal working state, the intelligent electronic switch 20 is said to be working in standby mode (Standby mode), that is, at this time, the intelligent electronic switch 20 has no load current output, but is in standby state, and can directly change to normal working mode once receiving the start control signal. When the switch circuit 22 is in the off state and the functional circuits in the intelligent electronic switch 20 are not working, the intelligent electronic switch 20 is said to be working in dormancy mode or sleep mode (Sleep mode), at this time, the power consumption of the intelligent electronic switch 20 is the lowest.

[0049] It can be understood that the embodiments of the present application are mainly explained by the application scenario that the switch circuit 22 is in the on state, and therefore, the intelligent electronic switch 20 works in the normal working mode or the bypass mode. The difference between the intelligent electronic switch 20 working in the bypass mode and the normal working mode is mainly reflected in the different self-power consumption of the intelligent electronic switch 20 in the two modes. For example, it can be reflected in the different working states of the functional circuits in the intelligent electronic switch 20, so that the power consumption of the functional circuits in the intelligent electronic switch 20 is different, thereby achieving different self-power consumption of the intelligent electronic switch 20.

[0050] This embodiment provides an intelligent electronic switch 20 that can operate in a bypass mode and a normal operating mode. Figure 1 As shown, the intelligent electronic switch 20 may include a power supply terminal VBAT, a power ground terminal GND, a load output terminal OUT, a switch circuit 22 and a control circuit 21 .

[0051] Among them, the power supply terminal VBAT and the power ground terminal GND are used to connect to the battery 10. Specifically, the power supply terminal VBAT is connected to the positive electrode of the battery 10, the power ground terminal GND is connected to the negative electrode of the battery 10, and the load output terminal OUT is used to connect to the load 30.

[0052] In an embodiment of the present application, the switch circuit 22 includes a main power switch Q1 and a bypass switch Q2, and the control circuit 21 includes a logic control unit 211, a first drive unit 212, and a current limiting drive unit 213. Among them, the first end of the main power switch Q1 and the first end of the bypass switch Q2 are both connected to the power supply terminal VBAT or the power ground terminal GND, the second end of the main power switch Q1 and the second end of the bypass switch Q2 are both connected to the load output terminal OUT, the control end of the main power switch Q1 is connected to the first drive unit 212, the control end of the bypass switch Q2 is connected to the current limiting drive unit 213, and the first drive unit 212 and the current limiting drive unit 213 are also connected to the logic control unit 211. The logic control unit 211 controls the main power switch Q1 to turn on or turn off via the first drive unit 212, and controls the bypass switch Q2 to turn on or turn off via the current limiting drive unit 213. In a possible design, as Figure 1 As shown, one end of the main power switch Q1 and the bypass switch Q2 are both connected to the load output terminal OUT, and the other end thereof is connected to the power supply terminal VBAT. At this time, the main power switch Q1 and the bypass switch Q2 are connected as a high-side switch, which is a switch connected between the power supply terminal VBAT and the load 30. In other possible designs of the present application, one end of the main power switch Q1 and the bypass switch Q2 are connected to the load output terminal OUT, and the other end thereof is connected to the power ground terminal GND. At this time, the main power switch Q1 and the bypass switch Q2 are connected as a low-side switch, which is a switch connected between the power ground terminal GND and the load 30.

[0053] As an example, when the intelligent electronic switch 20 works in the normal working mode, the logic control unit 211 drives the main power switch Q1 to turn on and conduct via the first driving unit 212. As another example, when the intelligent electronic switch 20 works in the bypass mode, the logic control unit 211 drives the bypass switch Q2 to turn on and conduct via the current limiting driving unit 213 and controls the main power switch Q1 to turn off and cut off via the first driving unit. Among them, the area occupied by the bypass switch Q2 is smaller than the area occupied by the main power switch Q1, and the current value flowing through the bypass switch Q2 in the bypass mode is less than or equal to the first current limiting value set by the current limiting driving unit 213, and the first current limiting value is less than the maximum current value flowing through the main power switch Q1 in the normal working mode.

[0054] Exemplarily, in the present application, the value range of the first current limiting value may be 1uA to 100uA. For example, the first current limiting value may be 10uA. It is understandable that the first value range may also be other values, which is not limited in the present embodiment.

[0055] For example, in practical applications, the intelligent electronic switch 20 may further include an input terminal Input, which may be connected to an external microcontroller 40 through the input terminal Input, and the control circuit 21 may control the switch state of the switch circuit 22 based on the switch control signal (Input signal) received from the microcontroller 40. For example, if the switch control signal received by the control circuit 21 is an on control signal on, the logic control unit 211 controls the main power switch Q1 to be turned on and turned on via the first drive unit 212 or controls the bypass switch Q2 to be turned on and turned on via the current limiting drive unit 213, and when the switch control signal received by the control circuit 21 is an off control signal off, the main power switch Q1 is turned off and turned off via the first drive unit 212 and the bypass switch Q2 is turned off and turned off via the current limiting drive unit 213.

[0056] Optionally, in actual applications, in order to meet the working requirements and low power consumption requirements of the load, several working modes of the intelligent electronic switch 20 are set, and the corresponding relationship between the first drive unit 212, the current limiting drive unit 213 and the working mode is set, so that the logic control unit 211 can control the working state of the first drive unit 212 and the current limiting drive unit 213 according to the working mode of the intelligent electronic switch 20, and then control the switching state of the main power switch Q1 and the bypass switch Q2. For example, in the normal working mode, the logic control unit 211 drives the main power switch Q1 to turn on and conduct via the first drive unit 212, and in the bypass mode, the logic control unit 211 drives the bypass switch Q2 to turn on and conduct via the current limiting drive unit 213.

[0057] In this embodiment, the driving capabilities of the first driving unit 212 and the current limiting driving unit 213 are different, the areas of the main power switch Q1 and the bypass switch Q2 are different, and the load carrying capacity thereof is different. Therefore, when the logic control unit 211 drives the main power switch Q1 to turn on and conduct via the first driving unit 212, the current flowing through the main power switch Q1 is different from the current flowing through the bypass switch Q2 when the logic control unit 211 drives the bypass switch Q2 to turn on and conduct via the current limiting driving unit 213. Among them, when the current limiting driving unit 213 drives the bypass switch Q2 to turn on and conduct, the maximum current value flowing through the bypass switch Q2 can be set, that is, the first current limiting value is set. Therefore, in the bypass mode, when the logic control unit 211 drives the bypass switch Q2 to turn on and conduct via the current limiting driving unit 213, the current value flowing through the bypass switch Q2 is less than or equal to the first current limiting value set by the current limiting driving unit 213.

[0058] In practical applications, when the main power switch Q1 and the bypass switch Q2 are implemented by MOS tubes, since the larger the area of ​​the same type of MOS tubes, the greater the current driving capability they have, and the current driving capability of the N-type MOS tubes of the same area is greater than the current driving capability of the P-type MOS tubes of the same area, when the bypass switch Q2 of the small area and the main power switch Q1 of the large area are both turned on, the current value flowing through the bypass switch Q2 is less than the current value flowing through the main power switch Q1. Accordingly, the first current limiting value set by the current limiting driving unit 213 is less than the maximum current value flowing through the main power switch Q1 in the normal working mode.

[0059] Therefore, in the intelligent electronic switch 20, the power consumption of the first driving unit 212 when working is greater than the power consumption of the current limiting driving unit 213 when working, so the self-consumption of the intelligent electronic switch 20 in the bypass mode is less than the self-consumption of the intelligent electronic switch 20 in the normal working mode.

[0060] In a possible design of this embodiment, the main power switch Q1 and the bypass switch Q2 may be N-type metal-oxide-semiconductor field-effect transistor (N Metal-Oxide-Semiconductor Field-Effect Transistor, NMOS FET, NMOS tube), PMOS tube, junction field effect transistor (Junction Field Effect Transistor, JFET) or insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), etc. In another possible design of this embodiment, the main power switch Q1 and the bypass switch Q2 may also be implemented as silicon devices, or may be implemented using other semiconductor materials, such as silicon carbide (SiC), gallium arsenide (GaAs) or gallium nitride (GaN), etc. The embodiment of the present application does not limit the specific implementation form of the main power switch Q1 and the bypass switch Q2, which may be selected according to actual needs.

[0061] Optionally, in practical applications, a fuse (not shown) may be connected in series between the battery 10 and the power supply terminal VBAT to prevent a fault caused by excessive current in the line. Other components may be provided between the power ground terminal GND and the negative electrode of the battery 10, for example, a reverse connection prevention diode and a current limiting resistor connected in parallel to improve the stability of the intelligent electronic switch 20.

[0062] Optional, in Figure 1In the schematic diagram shown, the connection relationship between the logic control unit 211, the first drive unit 212, the current limiting drive unit 213, etc. and the power supply unit is not shown, but in actual application, a power supply unit can be set inside the intelligent electronic switch 20, and the internal power supply unit is connected to the power supply terminal VBAT to reduce the voltage of the power supply terminal VBAT. For example, the power supply unit is used to reduce the voltage of the power supply terminal VBAT from 12V to 5V, and the voltage output by the power supply unit is used to provide the logic control unit 211, the first drive unit 212, the current limiting drive unit 213 and other circuits. Optionally, one implementation of the power supply unit is a low drop out regulator (LDO). In other embodiments, the power supply unit may not be provided inside the intelligent electronic switch 20. In this case, the positive electrode of the battery 10 is also connected to the step-down unit, and the step-down unit outputs the stepped-down voltage to the intelligent electronic switch 20. For example, the voltage range of the step-down unit output to the power supply terminal VBAT is 3.3V-5V, which can directly supply power to the logic control unit 211, the first drive unit 212, the current limiting drive unit 213 and other circuits inside the intelligent electronic switch 20.

[0063] It can be understood that in actual applications, when the main power switch q1 and the bypass switch Q2 are connected as high-side switches and are N-type switch tubes, the first driving unit 212 may also be connected to a boosting unit such as a charge pump, and the charge pump is used to boost the output voltage of the first driving unit 212 and then output it to the main power switch Q1, thereby driving the main power switch Q1 to turn on.

[0064] In an embodiment of the present application, the switch circuit includes a main power switch and a bypass switch, and the control circuit includes a logic control unit, a first drive unit and a current limiting drive unit. The intelligent electronic switch operates in a normal working mode, and the logic control unit drives the main power switch to turn on and conduct via the first drive unit. In the bypass mode, the logic control unit controls the bypass switch to turn on and conduct via the current limiting drive unit and controls the main power switch to turn off and cut off via the first drive unit. The area occupied by the bypass switch is smaller than the area occupied by the main power switch. In the bypass mode, the current value flowing through the bypass switch is less than or equal to the first current limiting value set by the current limiting drive unit, and the first current limiting value is less than the maximum current value flowing through the main power switch in the normal working mode. In this way, the power consumption of the current limiting drive unit when working is less than the power consumption of the first drive unit when working, so that the self-consumption of the intelligent electronic switch in the bypass mode is less than the self-consumption of the smart electronic switch in the normal working mode. Moreover, in this embodiment, the bypass circuit and the main circuit do not interfere with each other during operation, and the newly added bypass will not affect the original main circuit, so the performance is more stable and the reliability is high.

[0065] Optionally, the first embodiment provides a general introduction to the intelligent electronic switch 20. The following uses different embodiments to explain the realization principle that the self-consumption of the intelligent electronic switch 20 in the bypass mode is less than the self-consumption of the intelligent electronic switch 20 in the normal working mode. Figure 1 The principle is explained based on the illustrated embodiment (the main power switch Q1 and the bypass switch Q2 are connected as high-side switches). The implementation principle of the main power switch Q1 and the bypass switch Q2 being connected as low-side switches is similar and will not be described in detail in this embodiment.

[0066] Figure 2 Schematic diagram of a circuit module of an electronic device provided in the second embodiment of the present application. Figure 2 As shown, in this embodiment, the intelligent electronic switch 20 further includes a current protection unit 241 , and the current protection unit 241 is connected to the logic control unit 211 .

[0067] In practical applications, the current protection unit 241 is used to output a current protection signal when detecting that the output current of the switch circuit 22 is abnormal, so as to trigger current protection of the switch circuit 22 .

[0068] It can be understood that, in theory, the current protection unit 241 can perform current protection on both the main power switch Q1 and the bypass switch Q2. However, in this embodiment, since the current value flowing through the bypass switch Q2 in the bypass mode is less than or equal to the first current limit value set by the current limit driving unit 213, and the first current limit value is less than the maximum current value flowing through the main power switch Q1 in the normal working mode, the corresponding relationship between the current protection threshold and the first current limit value can be set. For example, when the current value flowing through the bypass switch Q2 or the main power switch Q1 is less than the first current limit value, the current sampling value of the bypass switch Q2 or the main power switch Q1 is less than the current protection threshold. Therefore, in the bypass mode, since the current value flowing through the bypass switch Q2 is less than or equal to the first current limiting value, the current sampling value corresponding to the current value flowing through the bypass switch Q2 will not exceed the overcurrent protection threshold. Therefore, even if the overcurrent protection unit works normally, it will not trigger the logic control unit 211 to perform overcurrent protection on the bypass switch Q2. Therefore, the current protection unit 241 mainly performs current protection on the main power switch Q1 when the intelligent electronic switch 20 is in the normal working mode, and stops working when the intelligent electronic switch 20 is in the bypass mode, so as to reduce the self-consumption of the intelligent electronic switch 20.

[0069] As an example, continue to refer to Figure 2As shown, the current protection unit 241 may include a current sampling module 241A and a current processing module 241B, wherein the current sampling module 241A is connected to the current processing module 241B, and the current processing module 241B is also used to access the current protection threshold. In this example, the current sampling module 241A is used to sample the current flowing through the main power switch Q1 and output the current sampling value to the current processing module 241B, and the current processing module 241B compares the current sampling value with the current protection threshold, and outputs a current protection signal to the logic control unit 211 when the current sampling value is abnormal, that is, the output current of the main power switch q1 is abnormal, so as to trigger the action on the main power switch q1, thereby realizing current protection for the main power switch Q1.

[0070] In one possible design, continue to refer to Figure 2 As shown, the current sampling module 241A may include a sensing transistor Qx, a first operational amplifier unit Y1 and a switch tube P11. When the main power switch Q1 and the sensing transistor Qx are both turned off, the switch tube P11 is also turned off. When the logic control unit 211 drives the main power switch Q1 and the sensing transistor Qx to turn on through the first driving unit, the positive terminal voltage of the first operational amplifier unit Y1 is less than the negative terminal voltage, then the first operational amplifier unit Y1 outputs a low level, the switch tube P11 is turned on, and the sensing transistor Qx outputs the sensed current through the switch tube P11. Optionally, the current processing module 241B may be a second operational amplifier unit Y2, which may compare the received sensing current with a preset current protection threshold value Iref to determine whether the current of the main power switch Q1 is abnormal.

[0071] In another possible design, the current sampling module 241A may include a sampling resistor and an operational amplifier unit. The sampling resistor is connected in series to the branch where the main power switch Q1 is located. At this time, the current flowing through the sampling resistor is the same as the current flowing through the main power switch Q1. Therefore, the current flowing through the main power switch Q1 can be obtained by detecting the current flowing through the sampling resistor.

[0072] In practical applications, the current sampling module 241A may also be implemented by other structures. For example, based on the principle that current generates a magnetic field, a magnetic field sensor is used to measure the current flowing through the main power switch Q1.

[0073] As an example, the current protection unit 241 includes an overcurrent protection unit, and the above-mentioned current protection threshold is the overcurrent protection threshold. Accordingly, in this example, the overcurrent protection unit is connected to a preset overcurrent protection threshold and a current sampling value, and the current sampling value is used to characterize the current value flowing through the main power switch Q1. Optionally, in the normal working mode, when the current sampling value is greater than the overcurrent protection threshold, the current value flowing through the main power switch Q1 is greater than the first current limiting value and the overcurrent protection unit outputs an overcurrent signal to the logic control unit 211, so that the logic control unit 211 controls the main power switch Q1 to be turned off and cut off via the first driving unit 212; in the bypass mode, the overcurrent protection unit stops working.

[0074] In the normal working mode, the logic control unit 211 controls the main power switch Q1 to turn on and conduct via the first driving unit 212, and current flows through the main power switch Q1. When the current value flowing through the main power switch Q1 is greater than the first current limiting value, the current sampling value is greater than the overcurrent protection threshold. Accordingly, the overcurrent protection unit outputs an overcurrent signal to the logic control unit 211, thereby prompting the logic control unit 211 to control the main power switch Q1 to turn off and cut off via the first driving unit 212, thereby preventing the main power switch Q1 from being burned out due to the large current flowing through.

[0075] As another example, the current protection unit 241 includes a current limiting protection unit, the current protection threshold is the current limiting protection threshold, and the current limiting protection unit is connected to the preset current limiting protection threshold and the current sampling value. In the normal working mode, the current limiting protection unit works normally. When the current sampling value is greater than the current limiting protection threshold, the current value flowing through the main power switch q1 is greater than the first current limiting value and the current limiting protection unit outputs a current limiting signal to the logic control unit 211, so that the logic control unit 211 adjusts the control signal output to the control end of the main power switch Q1 via the first driving unit 212 to reduce the current value flowing through the main power switch Q1, so that the current sampling value is less than or equal to the current limiting protection threshold; in the bypass mode, the current limiting protection unit stops working.

[0076] In normal working mode, when the current value flowing through the main power switch Q1 is greater than the first current limiting value, the current sampling value is greater than the current limiting protection threshold. Accordingly, the current limiting protection unit outputs a current limiting signal to the logic control unit 211, thereby prompting the logic control unit 211 to adjust the control signal for the main power switch Q1 via the first driving unit 212, thereby reducing the current value flowing through the main power switch Q1.

[0077] In the bypass mode, since the current value flowing through the main power switch Q1 is less than or equal to the first current limiting value, the current sampling value corresponding to the current value flowing through the main power switch Q1 will not exceed the current limiting protection threshold. Therefore, even if the current limiting protection unit works normally, it will not play a current limiting protection role. Therefore, in the bypass mode, the logic control unit 211 can control the current limiting protection unit to stop working, thereby reducing the self-consumption of the intelligent electronic switch 20.

[0078] Figure 3 Schematic diagram of a circuit module of an electronic device provided in the third embodiment of the present application. Figure 3 As shown, in this embodiment, the intelligent electronic switch 20 includes a first over-temperature protection unit 242 , a second over-temperature protection unit 243 and a third over-temperature protection unit 244 , and the first over-temperature protection unit 242 , the second over-temperature protection unit 243 and the third over-temperature protection unit 244 are all connected to the logic control unit 211 .

[0079] Reference Figure 3 As shown, the first over-temperature protection unit 242 is connected to a preset first over-temperature protection threshold and a first temperature sampling value, and the first temperature sampling value is used to characterize the temperature of the main power switch Q1; the second over-temperature protection unit 243 is connected to a preset second over-temperature protection threshold and a second temperature sampling value, and the second temperature sampling value is used to characterize the temperature of the bypass switch Q2; the third over-temperature protection unit 244 is connected to a preset third over-temperature protection threshold and a temperature difference, and the temperature difference is the difference between the temperature sampling value of the main power switch Q1 and the ambient temperature.

[0080] In normal working mode, the logic control unit 211 controls the first over-temperature protection unit 242 and the third over-temperature protection unit 244 to operate. When the first temperature sampling value is greater than the first over-temperature protection threshold, the first over-temperature protection unit 242 outputs a first over-temperature signal, and / or, when the temperature difference is greater than the third over-temperature protection threshold, the third over-temperature protection unit 244 outputs a first over-temperature signal. The logic control unit 211 controls the main power switch Q1 to be turned off via the first driving unit 212 according to the first over-temperature protection signal.

[0081] In bypass mode, the logic control unit 211 controls the first over-temperature protection unit 242 and the third over-temperature protection unit 244 to stop working and the second over-temperature protection unit 243 to work. When the second temperature sampling value is greater than the second over-temperature protection threshold, the second over-temperature protection unit 243 outputs a second over-temperature signal to make the logic control unit 211 control the bypass switch Q2 to be turned off via the current limiting drive unit 213; wherein, the power consumption of the second over-temperature protection unit 243 is less than the power consumption of the first over-temperature protection unit 242.

[0082] As an example, continue to refer to Figure 3As shown, the first over-temperature protection unit 242 may include a temperature detection module and a temperature processing module 2420, and the temperature detection module may include a first element 2421 and a first temperature detection element 2422, wherein the first temperature detection element 2422 is connected in series with the first element 2421, and the point where the first temperature detection element 2422 is connected to the first element 2421 is a temperature detection point TP, and the temperature detection point TP is connected to the temperature processing module 2420, and the first temperature detection element 2422 is arranged adjacent to the main power switch Q1 or embedded in the main power switch Q1, so as to detect the temperature of the main power switch Q1 more accurately. In this embodiment, one end of the first temperature detection element 2422 is connected to the power ground terminal GND, and the other end of the first temperature detection element 2422 is connected to one end of the first element 2421, and the other end of the first element 2421 can be connected to the power supply terminal VBAT via an internal power supply unit (not shown), but the present application is not limited thereto. In other embodiments of the present application, one end of the first temperature detection element 2422 is connected to the power supply terminal VBAT via the internal power supply unit, the other end of the first temperature detection element 2422 is connected to one end of the first element 2421, and the other end of the first element 2421 is connected to the power ground terminal GND. In this embodiment, the first temperature detection element 2422 is a temperature detection element with a negative temperature coefficient. At this time, if the temperature of the main power switch Q1 is higher, the temperature on the first temperature detection element 2422 is also higher, and the voltage of the corresponding temperature detection point TP is lower; and if the temperature of the main power switch Q1 is lower, the temperature on the first temperature detection element 2422 is also lower, and the voltage of the corresponding temperature detection point TP is higher. However, the present application is not limited to this. In other embodiments of the present application, the first temperature detection element 2422 can also be a temperature detection element with a positive temperature coefficient. At this time, the higher the temperature of the main power switch Q1, the higher the temperature on the first temperature detection element 2422, and the higher the voltage of the temperature detection point TP; if the temperature of the main power switch Q1 is lower, the temperature on the first temperature detection element 2422 is also lower, and the voltage of the temperature detection point TP is lower. In this embodiment, the first temperature detection element 2422 is exemplified as one or more diodes connected in series. In other embodiments of the present application, the first temperature detection element 2422 is one or more thermistors connected in series. In this embodiment, the first element 2421 can be a current source or a voltage divider resistor, for example, in this embodiment, the first element 2421 is explained as a current source.

[0083] In an embodiment of the present application, the temperature processing module 2420 can be an operational amplifier unit, which can compare the voltage of the acquired temperature monitoring point TP with the temperature threshold voltage Tref, and output an over-temperature signal to the logic control unit 211 when the temperature of the main power switch Q1 is abnormal, that is, the temperature sampling value is greater than the over-temperature protection threshold, that is, the voltage of the temperature detection point TP is less than the temperature threshold voltage Tref (the temperature detection element 2422 is a temperature detection element with a negative temperature coefficient), so as to trigger the logic control unit 211 to shut down the main power switch Q1 through the first driving unit 212, thereby realizing temperature protection for the main power switch Q1.

[0084] In one possible design, the second over-temperature protection unit 243 and the second over-temperature protection unit 242 can share the first element and the temperature processing module. Figure 3 As shown, the second over-temperature protection unit 243 and the second over-temperature protection unit 242 can share the first element, the internal power supply unit and the temperature processing module. At this time, a switch k1 can be connected between the first temperature detection element 2422 and the temperature detection point TP, and a switch k2 can be connected between the second temperature detection element 2423 included in the second over-temperature protection unit 243 and the temperature detection point TP. In the normal working mode, the switch k1 is turned on, the switch k2 is turned off, and the first over-temperature protection unit 242 works normally. In the bypass mode, the switch k1 is turned off, the switch k2 is turned on, and the second over-temperature protection unit 243 works normally. In this embodiment, the first over-temperature protection unit 242 and the second over-temperature protection unit 243 share the first element, the internal power supply unit and the temperature processing module, which reduces the number of components used and the occupied area, and saves costs.

[0085] Optionally, the structure and implementation principle of the third over-temperature protection unit 244 are the same as Figure 3In the present embodiment, the third over-temperature protection unit 244 includes a second element 2441 , a temperature detection element 2442 , an operational amplifier unit 2443 and an operational amplifier unit 2444 . Among them, the temperature detection element 2442 is far away from the temperature detection element 2422 in the first over-temperature protection unit 242, one end of the second element 2441 is connected to the power supply terminal VBAT through the internal power supply unit 2423, the other end of the second element 2441 is connected to the temperature detection element 2442 and the connection point between the two is TP2, the TP2 is connected to the first input end of the operational amplifier unit 2443, the other end of the temperature detection element 2442 is connected to the power ground terminal GND, the second input end of the operational amplifier unit 2443 is connected to the temperature detection point TP of the first over-temperature protection unit 24A, and its output end is connected to an input end of the operational amplifier unit 2444, and the other input end of the operational amplifier unit 2444 is used to connect to the third over-temperature protection unit 243, and its output end is connected to the logic control unit 211.

[0086] In this embodiment, the temperature detection element 2442 is used to obtain the ambient temperature of the main power switch Q1, the operational amplifier unit 2443 is used to determine the difference between the temperature sampling value of the main power switch Q and the ambient temperature and output the temperature difference TD, and the operational amplifier unit 2444 is used to output the first over-temperature signal Toc1 when the temperature difference TD is greater than the third over-temperature protection threshold Tref3.

[0087] Optionally, when the intelligent electronic switch 20 operates in the normal operating mode, the current range flowing through the main power switch Q1 is relatively large, and the maximum current value flowing through the main power switch Q1 may be greater than the first current limiting value. The main power switch Q1 may generate severe heat. Therefore, in order to prevent the main power switch Q1 from being damaged due to excessive temperature, in the normal operating mode, the first over-temperature protection unit 242 and the third over-temperature protection unit 244 are in normal operating state.

[0088] When the intelligent electronic switch 20 works in the bypass mode, the current value flowing through the bypass switch Q2 is less than the first current limit value. At this time, the heat generated by the bypass switch Q2 is small. However, if a load short circuit occurs or the bypass switch Q2 is heated for a long time, the bypass switch Q2 may also be damaged due to abnormal temperature. Therefore, the bypass switch Q2 is temperature-protected by setting the second temperature protection unit 243, that is, in the bypass mode, the logic control unit 211 controls the first over-temperature protection unit 242 and the third over-temperature protection unit 244 to stop working, and the second over-temperature protection unit 243 to work, so that the bypass switch Q2 can be prevented from being damaged by high temperature.

[0089] Optionally, in order to accurately control the power consumption of the intelligent electronic switch 20, in actual applications, the first over-temperature protection unit 242 and the second over-temperature protection unit 243 can be composed of components with different precisions. For example, the precision of the temperature sensor and the comparator in the first over-temperature protection unit 242 are higher than the precision of the temperature sensor and the comparator in the second over-temperature protection unit 243. In this way, the power consumption of the first over-temperature protection unit 242 when it is working is greater than the power consumption of the second over-temperature protection unit 243 when it is working, so that the self-consumption of the intelligent electronic switch 20 in the bypass mode is less than the self-consumption of the smart electronic switch 20 in the normal working mode. Moreover, in the bypass mode, the third over-temperature protection unit 244 stops working, which can reduce the self-consumption of the smart electronic switch 20 in the bypass mode.

[0090] Figure 4 Schematic diagram of a circuit module of an electronic device provided in the fourth embodiment of the present application. Figure 4 As shown, in this embodiment, when the switch circuit 22 includes a MOS tube, the main power switch Q1 can be an N-type MOS tube, and the bypass switch Q2 can be a P-type MOS tube, and when the main power switch Q1 and the bypass switch Q2 are both connected between the power supply terminal VBAT and the load output terminal OUT, the first driving unit 212 includes a boost module (such as a charge pump, etc.) and a driving module, the boost module is connected to the driving module, the driving module is connected to the control end of the main power switch Q1, the boost module is used to increase the output voltage of the driving module, and the driving module is used to control the main power switch Q1 to turn on when the intelligent electronic switch 20 works in the normal working mode.

[0091] Optionally, in this embodiment, the first driving unit 212 may further include a level shifter, and the driving module may drive the main power switch Q1 to turn on based on a signal transmitted by the level shifter. The current limiting driving unit 213 is used to drive the bypass switch Q2 to turn on and to limit the maximum current flowing through the bypass switch Q2.

[0092] It can be understood that when the main power switch Q1 and the bypass switch Q2 are connected as a high-side switch, in view of the conduction characteristics of the N-type MOS tube, the voltage output by the first driving unit 212 can be higher than the voltage of the power supply terminal VBAT through the boosting effect of the boost module, so that the gate-source voltage signal of the N-type MOS tube meets the turn-on requirement of the N-type MOS tube. However, in view of the conduction characteristics of the P-type MOS tube, the current limiting driving unit 213 that drives the P-type MOS tube to turn on does not need a boost module, etc., and the current limiting value flowing through the bypass switch Q2 can be set, so that the current limiting driving unit 213 reduces power consumption relative to the first driving unit 212.

[0093] For example, refer to Figure 4As shown, the boost module is implemented in the form of a charge pump. For example, the charge pump includes an oscillator, a P-type MOS tube CP_P1, an N-type MOS tube CP_N1, capacitors C1 and C2, and diodes D1 and D2, wherein the control ends of the P-type MOS tube CP_P1 and the N-type MOS tube CP_N1 are connected to the oscillator, the drain of the P-type MOS tube CP_P1 is connected to the power supply end VBAT, its source is connected to the source of the N-type MOS tube CP_N1 and the connection point is A1, the drain of the N-type MOS tube CP_N1 is connected to the first power supply end Vs, based on the voltage resistance of the P-type MOS tube CP_P1 and the N-type MOS tube CP_N1, for example, 5V, the first power supply end Vs is usually 5V lower than the voltage of the power supply end VBAT; one end of the capacitor C1 is connected to the connection point A1, and the other end is connected to the cathode of the diode D1 and the anode of the diode D2, the anode of the diode D1 and one end of the capacitor C2 are both connected to the power supply end VBAT, and the cathode of the diode D2 is connected to the other end of the capacitor C2. The oscillator is used to generate an oscillation frequency to turn on or off the P-type MOS tube CP_P1 and the N-type MOS tube CP_N1, the capacitor C1 is used to increase the voltage output by the charge pump, the capacitor C2 is used to store energy, and the diodes D1 and D2 are used to limit the current direction.

[0094] Optional, continue to refer to Figure 4 As shown, the driving module may include a switch tube D_P1 and a switch tube D_N1, the control end of the main power switch Q1 is connected to the drain of the switch tube D_P1 and the switch tube D_N1, the control ends of the switch tube D_P1 and the switch tube D_N1 are both connected to the logic control unit 211, the source of the switch tube D_P1 is connected to the output end of the boost module, the source of the switch tube D_N1 is connected to the load output end OUT, and the control ends of the switch tube D_P1 and the switch tube D_N1 are both connected to the logic control unit 211, so that the logic control unit 211 can control the switch tube D_P1 to turn on and the switch tube D_N1 to turn off, so that the power switch Q (N-type MOS tube) is turned on, and when the switch tube D_P1 is turned off and the switch tube D_N1 is turned on, the power switch Q is turned off.

[0095] Exemplarily, the second driving unit 213 is mainly used to drive the bypass switch Q2 to turn on, so that the intelligent electronic switch 20 provides a load current path through the bypass switch Q2. Figure 4As shown, in this embodiment, the current limiting driving unit 213 may include a transistor M1 and a constant current source I1. The transistor M1 and the bypass switch Q2 are of the same type. The transistor M1 and the constant current source I1 are connected to form a current limiting driving branch. One end of the current limiting driving branch is connected to one end of the bypass switch Q2, and the other end is connected to the power supply terminal VBAT or the power ground terminal GND. The control end is connected to the logic control unit 211, and the drain of the transistor M1 is connected to the control end thereof, and the control end thereof is also connected to the control end of the bypass switch Q2. At this time, in the bypass mode, the logic control unit 211 controls the current limiting drive branch to make the current limiting drive unit 213 work, so as to control the bypass switch Q2 to be turned on through the current limiting drive unit 213, and the current value flowing through the bypass switch Q2 is less than or equal to the first current limiting value set by the current limiting drive unit 213, and the first current limiting value is related to the current value provided by the constant current source I1 and the current mirror ratio of the transistor M1 and the bypass switch Q2, and the first current limiting value is less than the maximum current value flowing through the main power switch Q1 in the normal working mode.

[0096] In a possible design, the transistor M1 and the bypass switch Q2 are both N-type switch tubes, one end of the constant current source I1 is connected to the power supply terminal VBAT and the other end is connected to the drain of the transistor M1, the source of the transistor M1 is connected to the source of the bypass switch Q2 and both are connected to the load output terminal OUT or the power ground terminal GND. Optionally, when the bypass switch Q2 is connected as a high-side switch, the source of the bypass switch Q2 is connected to the load output terminal OUT, and when the bypass switch Q2 is connected as a low-side switch, the source of the bypass switch Q2 is connected to the power ground terminal GND.

[0097] In another possible design, refer to Figure 4 As shown, both transistor M1 and bypass switch Q2 are P-type switch tubes. At this time, one end of constant current source I1 is connected to power ground terminal GND or load output terminal OUT and the other end is connected to the drain of transistor M1. The source of transistor M1 and the source of bypass switch Q2 are connected and are both connected to power supply terminal VBAT or load output terminal OUT. Optionally, when bypass switch Q2 is connected as a high-side switch, the source of bypass switch Q2 is connected to power supply terminal VBAT, and when bypass switch Q2 is connected as a low-side switch, the source of bypass switch Q2 is connected to load output terminal OUT.

[0098] In an embodiment of the present application, the bypass switch Q2 includes a MOS tube, and the ratio of the first current limiting value to the current value provided by the constant current source I1 is equal to the ratio of the width-to-length ratio of the bypass switch Q2 to the width-to-length ratio of the transistor M1. Among them, the current value provided by the constant current source I1 is equal to the current value flowing through the transistor M1, and the ratio of the current value flowing through the bypass switch Q2 to the output current value of the transistor M1 is equal to the ratio of the width-to-length ratio of the bypass switch Q2 to the width-to-length ratio of the transistor M1. In addition, when the transistor M1 and the bypass switch Q2 operate in the saturation region, the current value flowing through the bypass switch Q2 is equal to the first current limiting value set by the current limiting driving unit 213. Therefore, in this embodiment, the ratio of the first current limiting value to the current value provided by the constant current source I1 is equal to the ratio of the width-to-length ratio of the bypass switch Q2 to the width-to-length ratio of the transistor M1.

[0099] Optionally, the embodiments of the present application do not limit the method for controlling the enabling of the current limiting drive unit. For example, as an example, the constant current source I1 includes an enable terminal. In the bypass mode, the logic control unit 211 can turn on the current limiting drive branch by controlling the enabling of the constant current source I1, thereby enabling the current limiting drive unit to work. As another example, the current limiting drive branch may also include a second switch module. In the bypass mode, the logic control unit 211 can enable the constant current drive unit to work by controlling the second switch module to turn on.

[0100] Optionally, in this embodiment, in the normal working mode, the first driving unit 212 drives the main power switch Q1 to work in the linear resistance region; in the bypass mode, the current limiting driving unit 213 drives the bypass switch Q2 to work in the saturation region.

[0101] Optionally, in bypass mode, when the rated operating current of the load is less than or equal to the first current limiting value, the bypass switch Q2 operates in the linear resistance region; when the rated operating current of the load is greater than the first current limiting value, the bypass switch Q2 operates in the saturation region.

[0102] As an example, in the normal working mode, after the first driving unit 212 drives the main power switch Q1 to turn on, the current value flowing through the main power switch Q1 can change with the load size within the output current range that the main power switch Q1 can provide. According to the output characteristic curve of the power switch, it can be seen that the main power switch Q1 works in the linear resistance area at this time. In the bypass mode, after the current limiting driving unit 213 drives the bypass switch Q2 to turn on, when the current value flowing through the bypass switch Q2 is less than the first current limiting value set by the current limiting driving unit 213, the current value flowing through the bypass switch Q2 can change with the load size, and the bypass switch Q2 works in the linear resistance area; when the current value flowing through the bypass switch Q2 reaches the first current limiting value set by the current limiting driving unit 213, the current value flowing through the bypass switch Q2 basically no longer changes with the increase of the load, and the bypass switch Q2 works in the saturation area.

[0103] It is understandable that in a specific implementation, the current limiting drive unit 213 can also be implemented through other structures. For example, the current limiting drive unit 213 can also include one or more mirror units, or the constant current source is replaced with a constant current source of other specifications and one or more mirror units, etc. Correspondingly, the connection relationship between the internal circuit elements of the current limiting drive unit 213 can also be adjusted according to actual needs, etc. This embodiment does not limit the specific structure of the current limiting drive unit 213.

[0104] In this embodiment, the current limiting driving unit can set the maximum current value flowing through the bypass switch through a current source and a transistor. It has a simple structure and is easy to implement. Compared with the first driving unit, it has lower power consumption, saving power consumption while meeting the load current requirements.

[0105] Optionally, based on the above embodiment, Figure 5 Schematic diagram of a circuit structure of an electronic device provided in the fifth embodiment of the present application. Figure 5 As shown, the intelligent electronic switch 20 may further include a diagnostic circuit 23 and a diagnostic output terminal CS. The diagnostic circuit 23 is connected to the logic control unit 211 and the diagnostic output terminal CS. The diagnostic circuit 23 is used to collect parameter information of the intelligent electronic switch 20 and output it to the microcontroller 40 via the diagnostic output terminal CS, so that the microcontroller 40 diagnoses the state of the intelligent electronic switch 20.

[0106] In the normal working mode, the logic control unit 211 controls the diagnostic circuit 23 to work in the first diagnostic state, and in the bypass mode, the logic control unit 211 controls the diagnostic circuit 23 to work in the second diagnostic state, and the power consumption of the diagnostic circuit 23 working in the second diagnostic state is less than the power consumption of the diagnostic circuit 23 working in the first diagnostic state. For example, in the normal working mode, the diagnostic circuit 23 works normally, and in the bypass mode, the diagnostic circuit 23 stops working or some modules of the diagnostic circuit 23 stop working or the diagnostic circuit works in the energy-saving state or some modules of the diagnostic circuit 23 work in the energy-saving state, wherein the energy-saving state may be a periodic working state.

[0107] In this embodiment, the diagnostic circuit 23 can monitor some working indicators of the intelligent electronic switch 20 and obtain parameter information of the intelligent electronic switch 20 when the main power switch Q1 and / or the bypass switch Q2 are in the on state, and output the parameter information to the microcontroller 40 through the diagnostic output terminal CS, so that the microcontroller 40 can diagnose the state of the intelligent electronic switch 20 based on the received parameter information.

[0108] Exemplarily, the explanation is given by taking the normal working mode as the case where the diagnostic circuit 23 works normally, and the bypass mode as the case where the diagnostic circuit 23 stops working. Therefore, when the intelligent electronic switch 20 works in the normal working mode, the diagnostic circuit 23 can obtain at least one of the current information flowing through the main power switch Q1, the temperature information of the main power switch Q1, the power supply voltage information of the intelligent electronic switch 20, and the abnormal indication information that the main power switch Q1 is abnormally turned off, and can output the corresponding parameter information to the microcontroller 40 through the diagnostic output terminal CS based on the function selection of the microcontroller 40, so that the microcontroller 40 can diagnose the state of the intelligent electronic switch 20, thereby more accurately controlling the working state of the intelligent electronic switch 20.

[0109] In this technical solution, when the smart electronic switch controls the main power switch or the bypass switch to be in the on state, it can also control the working state of the diagnostic circuit according to the working mode of the smart electronic switch. On the basis of ensuring the normal operation of the load, the self-consumption of the smart electronic switch is effectively reduced, the battery life of the battery connected to the smart electronic switch is extended, and the application experience is improved.

[0110] Optionally, in an embodiment of the present application, the intelligent electronic switch 20 may further include a protection circuit 24, which is connected to the logic control unit 211, and the protection circuit 24 is used to protect the intelligent electronic switch 20. When the intelligent electronic switch 20 works in the normal working mode, the logic control unit 211 controls the main power switch Q1 to turn on and conduct via the first drive unit 212, and can also control the protection circuit 24 to work in the first protection state, and when the intelligent electronic switch 20 works in the bypass mode, the logic control unit 211 controls the bypass switch Q2 to turn on and conduct via the current limiting drive unit 213, and can also control the protection circuit 24 to work in the second protection state, wherein the power consumption of the protection circuit 24 working in the second protection state is less than the power consumption of the protection circuit 24 working in the first protection state, so as to reduce the power consumption of the protection circuit 24 in the bypass mode.

[0111] For example, the protection circuit 24 may include the above Figure 2 The current protection unit 241 shown in Figure 3 At least one of the over-temperature protection unit 242, the voltage protection unit (not shown), etc. shown in FIG.

[0112] The specific implementation and working principle of the current protection unit 241 and the over-temperature protection unit 242 can be found in the above-mentioned embodiments, and will not be described in detail here. The voltage protection unit is used to trigger voltage protection of the intelligent electronic switch 20 when an abnormal voltage is detected at the power supply terminal VBAT and an abnormal voltage signal is output. The power consumption of the voltage protection unit in the bypass mode is less than that in the normal working mode.

[0113] Optionally, the voltage protection unit may include an overvoltage protection unit and / or an undervoltage protection unit. The overvoltage protection unit is used to trigger overvoltage protection of the intelligent electronic switch 20 when it is detected that the voltage of the power supply terminal VBAT is higher than the first voltage threshold. For example, when the voltage VBAT of the power supply terminal VBAT is greater than the first voltage threshold, the switch circuit 22 may be turned off by the logic control unit 211 or the voltage of the power supply terminal VBAT may be pulled down by means of a voltage clamp circuit to reduce the voltage of the power supply terminal VBAT, thereby protecting the intelligent electronic switch 20 from being damaged by high voltage. The undervoltage protection unit is used to trigger undervoltage protection of the intelligent electronic switch 20 when it is detected that the voltage of the power supply terminal VBAT is lower than the second voltage threshold. For example, when the voltage of the power supply terminal VBAT is less than the second voltage threshold, the intelligent electronic switch 20 may be prohibited from being used by turning off the switch circuit 22 by the logic control unit 211, so as to improve the reliability of the intelligent electronic switch 20 when being used.

[0114] In practical applications, multiple protection units or one or more of the multiple protection units may be designed in the intelligent electronic switch 20 at the same time. For example, the intelligent electronic switch 20 may have a current protection unit, an over-temperature protection unit, a voltage protection unit, etc. at the same time, or may have only one or more of them. When at least two protection units are designed in the intelligent electronic switch 20 at the same time, in the bypass mode, at least one protection unit in the protection circuit 24 stops working or works in an energy-saving state to reduce the power consumption of the protection circuit 24, thereby reducing the self-consumption of the intelligent electronic switch 20.

[0115] Optionally, in other embodiments of the present application, continue to refer to Figure 5 As shown, the intelligent electronic switch 20 further includes a first functional terminal FU1 and a second functional terminal FU2, and the first functional terminal FU1 and the second functional terminal FU2 are both connected to the logic control unit 211; when the first functional terminal FU1 receives a first signal and the second functional terminal FU2 receives a second signal, the logic control unit 211 controls the intelligent electronic switch 20 to enter the bypass mode; wherein, the self-consumption of the intelligent electronic switch 20 in the bypass mode is less than the self-consumption of the intelligent electronic switch 20 in the normal working mode, in the normal working mode, the main power switch Q1 is in the on-state, and in the bypass mode, the bypass switch Q2 is in the on-state.

[0116] Exemplarily, in order to be fully compatible with the original functions of the intelligent electronic switch 20, the first function terminal FU1 and the second function terminal FU2 can reuse any two of the input terminal Input, the diagnosis enable terminal SEN, the first function selection terminal SEL1, the second function selection terminal SEL0, the diagnosis release terminal Fault and other terminals of the intelligent electronic switch 20.

[0117] As an example, the first function terminal FU1 can reuse the diagnostic enable terminal SEN, and the second function terminal FU2 can reuse the input terminal Input. In other examples, the first function terminal FU1 and the second function terminal FU2 can also reuse other terminals, which are not limited in the embodiments of the present application. It is understandable that in other embodiments of the present application, the first function terminal FU1 and / or the second function terminal FU2 can also be a newly added terminal of the intelligent electronic switch 20, or a combination of a newly added terminal and an original terminal, which are not limited in the embodiments of the present application.

[0118] Optional, see Figure 5 As shown, the intelligent electronic switch 20 is connected to the microcontroller 40 through the first functional terminal FU1 and the second functional terminal FU2, so that the logic control unit 211 can receive the first signal from the microcontroller 40 through the first functional terminal FU1 and receive the second signal from the microcontroller 40 through the second functional terminal FU2. In other embodiments, the logic control unit 211 can also receive the first signal and the second signal from other devices or circuits through the first functional terminal FU1 and the second functional terminal FU2, which is not limited in the embodiments of the present application.

[0119] Optionally, when the intelligent electronic switch 20 operates in the normal working mode, if the first function terminal FU1 receives a first signal and the second function terminal FU2 receives a second signal, the logic control unit 211 can control the intelligent electronic switch 20 to enter the bypass mode to reduce the self-power consumption of the intelligent electronic switch 20.

[0120] It can be understood that other parts that are not detailed in one embodiment of the present application can be referred to the records in other embodiments of the present application and will not be repeated here.

[0121] Optionally, based on the above embodiments, the embodiment of the present application further provides an integrated circuit chip, the integrated circuit chip includes the intelligent electronic switch 20 in the above embodiments, that is, the above intelligent electronic switch 20 can be made on the same semiconductor substrate. Among them, the power supply terminal VBAT is a power supply pin, the power ground terminal GND is a power ground pin, and the load output terminal OUT is a load output pin.

[0122] Optionally, other embodiments of the present application further provide a chip product, which may include the above-mentioned intelligent electronic switch 20. As an example, the components of the intelligent electronic switch 20 except the main power switch Q1 are located on a first integrated circuit chip, and the main power switch Q1 is located on a second integrated circuit chip, that is, the first integrated circuit chip is made on one semiconductor substrate, and the second integrated circuit chip is made on another semiconductor substrate.

[0123] As another example, the components of the intelligent electronic switch 20 except the main power switch Q1 and the bypass switch Q2 are located on a first integrated circuit chip, and the main power switch Q1 and the bypass switch Q2 are located on a second integrated circuit chip.

[0124] Among them, the power supply terminal VBAT is the power supply pin, the power ground terminal GND is the power ground pin, the load output terminal OUT is the load output pin, the power supply pin and the power ground pin are located on the first integrated circuit chip, and the load output pin is located on the second integrated circuit chip. In addition, the first integrated circuit chip also includes other pins, such as input pins, diagnostic enable pins, diagnostic output pins, first drive pins, etc., and the second integrated circuit chip also includes other pins, for example, second drive pins, wherein the first drive pin is respectively connected to the drive circuit and the second drive pin, and the second drive pin is connected to the control end of the main power switch Q1 and / or the bypass switch Q2. It can be understood that the first integrated circuit chip and the second integrated circuit chip can also add other pins, omit related pins, or merge related pins as needed. Here, the first integrated circuit chip and the second integrated circuit chip are packaged into one product.

[0125] In addition, in other embodiments of the present application, a car is also provided. The car can be an electric car, such as an electric passenger car or an electric commercial vehicle, or a hybrid car or a fuel car. Figures 1 to 5 As shown, the automobile includes a battery 10 , a load 30 , a microcontroller 40 and an intelligent electronic switch 20 .

[0126] The microcontroller 40 is connected to the intelligent electronic switch 20 and is used to control the intelligent electronic switch 20. Meanwhile, the intelligent electronic switch 20 feeds back its state and related parameter information to the microcontroller 40 for processing by the microcontroller.

[0127] It is understandable that the intelligent electronic switch and integrated circuit chip of this embodiment are not limited to use in automotive electronics, but can also be used in industrial automation, aerospace and other fields, which will not be elaborated here.

[0128] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the application disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0129] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. An intelligent electronic switch, characterized in that: It includes a power supply terminal, a power ground terminal, a load output terminal, a switch circuit and a control circuit; the power supply terminal and the power ground terminal are used to connect to a battery, and the load output terminal is used to connect to a load; Wherein, the switch circuit includes a main power switch and a bypass switch, the control circuit includes a logic control unit, a first drive unit and a current limiting drive unit, the first end of the main power switch and the first end of the bypass switch are both connected to the power supply end or the power ground end, the second end of the main power switch and the second end of the bypass switch are both connected to the load output end, the control end of the main power switch is connected to the first drive unit, the control end of the bypass switch is connected to the current limiting drive unit, and the first drive unit and the current limiting drive unit are also connected to the logic control unit; When the intelligent electronic switch operates in a normal working mode, the logic control unit drives the main power switch to turn on and conduct via the first driving unit; in the bypass mode, the logic control unit controls the bypass switch to turn on and conduct via the current limiting driving unit and controls the main power switch to turn off and conduct via the first driving unit; the area occupied by the bypass switch is smaller than the area occupied by the main power switch, and the current value flowing through the bypass switch in the bypass mode is less than or equal to the first current limiting value set by the current limiting driving unit, and the first current limiting value is less than the maximum current value flowing through the main power switch in the normal working mode.

2. The intelligent electronic switch according to claim 1, characterized in that: It also includes an overcurrent protection unit connected to the logic control unit, the overcurrent protection unit is connected to a preset overcurrent protection threshold, and the overcurrent protection unit is also connected to a current sampling value, and the current sampling value is used to characterize the current value flowing through the main power switch; In the normal working mode, when the current sampling value is greater than the overcurrent protection threshold, the current flowing through the main power switch is greater than the first current limiting value and the overcurrent protection unit outputs an overcurrent signal to the first driving unit, and the first driving unit controls the main power switch to be disconnected and cut off; In the bypass mode, the overcurrent protection unit stops working.

3. The intelligent electronic switch according to claim 1, characterized in that: It also includes a current limiting protection unit connected to the logic control unit, the current limiting protection unit is connected to a preset current limiting protection threshold, and the current limiting protection unit is also connected to a current sampling value, and the current sampling value is used to characterize the current value flowing through the main power switch; In normal working mode, when the current sampling value is greater than the current limiting protection threshold, the current flowing through the main power switch is greater than the first current limiting value and the current limiting protection unit outputs a current limiting signal to the logic control unit, so that the logic control unit adjusts the size of the control signal output to the control end of the main power switch via the first driving unit to reduce the current flowing through the main power switch so that the current sampling value is less than or equal to the current limiting protection threshold; in bypass mode, the current limiting protection unit stops working.

4. The intelligent electronic switch according to claim 1, characterized in that: It also includes a first over-temperature protection unit, a second over-temperature protection unit and a third over-temperature protection unit connected to the logic control unit; The first over-temperature protection unit is connected to a preset first over-temperature protection threshold and a first temperature sampling value, and the first temperature sampling value is used to characterize the temperature of the main power switch; The second over-temperature protection unit is connected to a preset second over-temperature protection threshold and a second temperature sampling value, and the second temperature sampling value is used to characterize the temperature of the bypass switch; The third over-temperature protection unit is connected to a preset third over-temperature protection threshold and a temperature difference, wherein the temperature difference is a difference between a temperature sampling value of the main power switch and an ambient temperature; In the normal working mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to work, when the first temperature sampling value is greater than the first over-temperature protection threshold, the first over-temperature protection unit outputs a first over-temperature signal, and / or, when the temperature difference is greater than the third over-temperature protection threshold, the third over-temperature protection unit outputs a first over-temperature signal, and the logic control unit controls the main power switch to be turned off via the first driving unit according to the first over-temperature protection signal; In bypass mode, the logic control unit controls the first over-temperature protection unit and the third over-temperature protection unit to stop working and the second over-temperature protection unit to work. When the second temperature sampling value is greater than the second over-temperature protection threshold, the second over-temperature protection unit outputs a second over-temperature signal, so that the logic control unit controls the bypass switch to be turned off via the current limiting drive unit; wherein, the power consumption of the second over-temperature protection unit is less than the power consumption of the first over-temperature protection unit.

5. The intelligent electronic switch according to claim 1, characterized in that: The current limiting driving unit comprises a transistor and a constant current source, and the transistor and the bypass switch are of the same type; The transistor and the constant current source are connected to form a current limiting driving branch, one end of the current limiting driving branch is connected to one end of the bypass switch, the other end is connected to the power supply end or the power ground end, the control end is connected to the logic control unit, the drain of the transistor is connected to its control end and the control end of the bypass switch; in the bypass mode, the logic control unit controls the current limiting driving branch to be turned on so that the current limiting driving unit works, and the first current limiting value is related to the current value provided by the constant current source and the current mirror ratio of the transistor and the power switch.

6. The intelligent electronic switch according to claim 5, characterized in that: The transistor and the bypass switch are both N-type switch tubes, one end of the constant current source is connected to the power supply end and the other end is connected to the drain of the transistor, the source of the transistor is connected to the source of the bypass switch and both are connected to the load output end or the power ground end; or, The transistor and the bypass switch are both P-type switch tubes, one end of the constant current source is connected to the power supply ground terminal or the load output terminal and the other end is connected to the drain of the transistor, the source of the transistor and the source of the bypass switch are connected and are both connected to the power supply terminal or the load output terminal.

7. The intelligent electronic switch according to claim 5 or 6, characterized in that: The bypass switch includes a MOS transistor, and the ratio of the first current limiting value to the current value provided by the constant current source is equal to the ratio of the width-to-length ratio of the bypass switch to the width-to-length ratio of the transistor.

8. The intelligent electronic switch according to any one of claims 1 to 6, characterized in that: In the normal operation mode, the main power switch tube is turned on and the main power switch tube operates in the linear resistance region; in the bypass mode, the bypass switch is turned on and the bypass switch operates in the saturation region.

9. The intelligent electronic switch according to any one of claims 1 to 6, characterized in that: When the main power switch is an N-type switch tube, the first driving unit includes a boost module and a driving module. The boost module is connected to the power supply end of the driving module. The boost module is used to make its output voltage greater than the voltage of the power supply end, so that the driving module drives the main power switch to turn on in the normal working mode.

10. An integrated circuit chip, characterized in that: The intelligent electronic switch comprises the intelligent electronic switch according to any one of claims 1 to 9, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

11. A chip product, characterized in that: The intelligent electronic switch according to any one of claims 1 to 9, wherein the components of the intelligent electronic switch except the main power switch are located on a first integrated circuit chip, and the main power switch is located on a second integrated circuit chip; or, the components of the intelligent electronic switch except the main power switch and the bypass switch are located on a first integrated circuit chip, and the main power switch and the bypass switch are located on a second integrated circuit chip; Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin. The power supply pin and the power ground pin are located on a first integrated circuit chip, and the load output pin is located on a second integrated circuit chip.

12. A car, characterized in that: Comprising the intelligent electronic switch according to any one of claims 1 to 9, or the integrated circuit chip according to claim 10, or the chip product according to claim 11; It also includes a battery, a load and a microcontroller; wherein the positive electrode of the battery is connected to the power supply terminal, the negative electrode of the battery is connected to the power ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power ground terminal or the power supply terminal, and the microcontroller is connected to the intelligent electronic switch.

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