Dual-frequency driving method for pulse high-frequency ionization device

Abstract

The invention provides a double-frequency driving method for a pulse high-frequency ionization device, which comprises the following steps of: generating high-frequency low power for cold start ignition by using a continuous output high-frequency driving signal which is generated by a double-frequency driving device and is used for driving a low-power high-frequency power source; a pulse output high-frequency driving signal generated by the double-frequency driving device and used for driving the low-power high-frequency power source is used for generating high-frequency low power used for maintaining cold start ignition; the pulse output low-frequency driving signal generated by the double-frequency driving device and used for driving the high-power and high-frequency power source is used for generating low-frequency and high-power for generating high-yield plasma; according to the pulse high-frequency ionization device disclosed by the invention, two driving frequencies, the third-party power amplifier and the third-party adjustable vector impedance matching device are adopted; the plasma pulse power requirement of the specific frequency of a user and the pulse power requirement of the pulse high-frequency ionization device in the cold start ignition stage and the plasma continuation state maintaining stage can be considered at the same time.

Description

Technical Field

[0001] The invention belongs to the technical field of high-frequency plasma and high-frequency power transmission, and in particular relates to a dual-frequency driving method for a pulse high-frequency ionization device. Background Art

[0002] High-frequency plasma ionization devices are widely used in the fields of semiconductor industry, material science research, charged particle accelerators and controlled nuclear fusion neutral beam injection. Among them, pulsed high-frequency ionization devices are particularly suitable for scenarios where high-intensity pulse beams need to be generated, and can provide instantaneous extraction currents far exceeding those of continuous ionization devices.

[0003] However, since a pulse high-frequency ionization method with a single frequency is usually used when the pulse high-frequency ionization device is in operation, the problem with the pulse high-frequency ionization with a single frequency is that the plasma required by the user is often a plasma generated at a specific frequency, and the plasma generated at a specific frequency requires power at a specific frequency. However, the power at this specific frequency does not meet the power required for the cold start ignition stage and the power required for maintaining the cold start ignition stage of the pulse high-frequency ionization device. On the contrary, if the power required for the cold start ignition stage and the power required for maintaining the cold start ignition stage of the pulse high-frequency ionization device is met, it is definitely not the power at the specific frequency required by the user. In order to meet the user's demand for plasma with a specific frequency, the pulse high-frequency ionization device must find additional ways to add a device for cold start ignition and a device for maintaining the plasma state, but this will lead to a complex structure and complex debugging of the pulse high-frequency ionization device. Summary of the invention

[0004] In order to solve the problems existing in the prior art, the present invention proposes a dual-frequency driving method for a pulse high-frequency ionization device, aiming to solve the problem that a single-frequency pulse high-frequency ionization method cannot simultaneously take into account the power demand of a specific frequency and the power demand of the cold start ignition and ignition maintenance stages of the pulse high-frequency ionization device.

[0005] The present invention proposes the following technical solutions to solve the technical problems: A dual-frequency driving method for a pulse high-frequency ionization device, the dual-frequency driving method is based on a dual-frequency driving device for a pulse high-frequency ionization device, the dual-frequency driving device is used to provide a dual-frequency signal to be amplified for a third-party adjustable dual-frequency vector impedance matching device, the dual-frequency signal to be amplified inherently having dual-frequency frequency, amplitude and delay characteristics; the dual-frequency driving device is provided with: a dual-frequency signal controller (10), a dual-frequency sine / cosine digital waveform generator (20), a high-frequency high-frequency digital carrier modulation channel (30) and a low-frequency high-frequency digital carrier modulation channel (31), and a dual-high-frequency digital-to-analog conversion output driving module (40) in sequence from one side to the other; The dual-frequency signal controller (10) is used to generate a dual-frequency frequency control signal and a dual-frequency amplitude control signal with an inherent dual-frequency delay control characteristic, and send the dual-frequency frequency control signal to a dual-frequency sine / cosine digital waveform generator (20), and send the dual-frequency amplitude control signal with an inherent delay characteristic to a high-frequency high-frequency digital carrier modulation path (30) and a low-frequency high-frequency digital carrier modulation path (31) respectively; the dual-frequency sine / cosine digital waveform generator (20) is used to convert the received dual-frequency frequency control signal into a sine / cosine signal and send it to the high-frequency high-frequency digital carrier modulation path (30) and the low-frequency high-frequency digital carrier modulation path (31) respectively; the high-frequency high-frequency digital The carrier modulation path (30) is used to multiply the received sine / cosine signal by the received dual-frequency amplitude control signal with an inherent dual-frequency time delay control characteristic, thereby realizing modulation of the high-frequency and high-frequency digital carrier signal; the low-frequency and high-frequency digital carrier modulation path (31) is used to multiply the received sine / cosine signal by the received dual-frequency amplitude control signal with an inherent dual-frequency time delay control characteristic, thereby realizing modulation of the low-frequency and high-frequency digital carrier signal; the dual-high-frequency digital-to-analog conversion output drive module (40) is used to perform digital-to-analog conversion on the modulated high-frequency and high-frequency digital carrier signal and the modulated low-frequency and high-frequency digital carrier signal, and send the digital-to-analog converted signals to respective power amplifiers; The characteristic is that the dual-frequency driving method comprises the following steps: Step 1: When the pulse high-frequency ionization device enters the cold start ignition state, a high-frequency driving signal for driving a low-power high-frequency power source generated by a dual-frequency driving device is continuously output to generate high-frequency low power for cold start ignition, and the high-frequency low-power pulse is fed into the pulse high-frequency ionization device through a third-party impedance matching device to ionize and generate plasma material; the continuously output high-frequency driving signal contains frequency and amplitude characteristics for the cold start state; Step 2: When the pulse high-frequency ionization device enters the plasma ignition state and maintenance state, the pulse output high-frequency driving signal generated by the dual-frequency driving device for driving the low-power high-frequency power source is Generate high frequency and low power for maintaining cold start ignition, and feed the high frequency and low power pulse to the pulse high frequency ionization device through a third-party impedance matching device, so as to maintain the continuous generation and existence of plasma material with a certain density and temperature inside the pulse high frequency ionization device; the high frequency driving signal output by the pulse contains frequency, amplitude and delay characteristics for maintaining the plasma existence state; Step three: When the pulse high-frequency ionization device enters a high-yield plasma pulse generation state, a pulse output low-frequency driving signal generated by a dual-frequency driving device for driving a high-power high-frequency power source generates a low-frequency and high-power for high-yield plasma generation, and the low-frequency and high-power pulse is fed into the pulse high-frequency ionization device through a third-party impedance matching device, so as to promote the violent ionization of the plasma in a short time and generate a large amount of plasma material that can be drawn out; the pulse output low-frequency driving signal contains frequency, amplitude, and delay characteristics for high-yield plasma pulse generation.

[0006] Furthermore, the specific process of step one is as follows: 1) When the pulse high-frequency ionization device performs cold start ignition, the high-frequency driving signal with continuous output generated by the dual-frequency driving device is sent to the low-power high-frequency power source; 2) The low-power high-frequency power source outputs a high-frequency low power of a certain frequency and amplitude corresponding to the continuously output high-frequency driving signal; 3) The high frequency and low power are transmitted to the pulse high frequency ionization device through the adjustable vector impedance matching device connected later; 4) Use this high frequency and low power to ignite the plasma of the pulsed high frequency ionization device.

[0007] Furthermore, the specific process of step 2 is as follows: 1) When the pulse high-frequency ionization device is maintaining the cold start ignition state, the high-frequency driving signal generated by the pulse output of the dual-frequency driving device is sent to the low-power high-frequency power source amplifier; 2) The low-power high-frequency power source outputs a high-frequency low power of a certain frequency and amplitude corresponding to the high-frequency driving signal output by the pulse; 3) The high frequency and low power are transmitted to the pulse high frequency ionization device through the adjustable vector impedance matching device connected later; 4) Use this high frequency and low power to maintain the plasma state.

[0008] Furthermore, the specific process of step three is as follows: 1) When the pulse high-frequency ionization device enters the high-yield plasma pulse generation (S3) state, the low-frequency high-power driving signal generated by the dual-frequency driving device is sent to the high-power high-frequency power source amplifier; 2) The high-power high-frequency power source amplifier outputs high-low-frequency high-power of a certain frequency and amplitude corresponding to the low-frequency high-power driving signal; 3) The high and low frequency high power is transmitted to the load through the adjustable vector impedance matching device connected later; 4) Use the high and low frequencies and high powers to generate a large amount of plasma material that can be drawn out.

[0009] Furthermore, the continuously output high-frequency driving signal contains frequency and amplitude characteristics for the cold start state, specifically: The frequency is preferably a frequency with the highest plasma ignition success rate or the shortest ignition time within the working bandwidth of the low-power high-frequency power source, and any frequency within the working bandwidth of the low-power high-frequency power source that can achieve a cold start ignition function can also be selected; The amplitude is preferably sufficient to drive the low-power high-frequency power source to output the high-frequency cold-start ignition power, and to achieve the driving signal amplitude corresponding to the minimum power of the plasma cold-start ignition function plus a sufficient margin through a third-party matching device; or preferably, the driving signal amplitude corresponding to the maximum output power that the low-power high-frequency power source can tolerate under instantaneous total reflection; or any value in between.

[0010] Furthermore, the high-frequency driving signal of the pulse output contains frequency, amplitude, and time delay characteristics for maintaining the plasma state, and its frequency, amplitude, and time delay characteristics are specifically: The frequency is preferably a frequency consistent with the cold start state, or a frequency that can maintain the plasma state within the working bandwidth of the low-power high-frequency power source and can minimize the high-frequency standing wave ratio; This amplitude forms a counter pulse complementary to the high-yield plasma pulse amplitude in each repetition cycle, and has a high duty cycle; the peak-to-peak value of the amplitude corresponds to the peak-to-peak value of the driving signal when the low-power high-frequency power source outputs full power; the low-power high-frequency power source is driven by the high-frequency driving signal output by the pulse.

[0011] The delay feature is 0 delay; The plasma-maintaining state refers to the plasma-maintaining state generated by the cold start state, or the plasma-maintaining state remaining after the high-yield plasma pulse generation state ends.

[0012] Furthermore, the low-frequency driving signal of the pulse output contains frequency, amplitude, and delay characteristics for generating high-yield plasma pulses, specifically: The frequency is optimized and adjusted according to the user's requirements for the specific working gas and plasma temperature, electron temperature, electron density and other properties of the pulsed high-frequency ionization device; The amplitude is a short pulse with the same repetition period as the amplitude characteristic of maintaining the plasma existence state, and has a low duty cycle; the peak-to-peak value of the amplitude corresponds to the peak-to-peak value of the driving signal when the high-power high-frequency power source outputs full power; the high-power high-frequency power source is driven by the high-frequency driving signal output by the pulse.

[0013] The time delay is preferably the pulse width of the plasma-sustaining state, so as to achieve alternating appearance of short pulses of the high-yield plasma state and wide pulses of the plasma-sustaining state.

[0014] Advantages and effects of the present invention 1. By combining a dual-frequency driving device with a third-party power amplifier + adjustable dual-frequency vector impedance matching device, one frequency of the dual-frequency driving device is used to match the impedance of the load end in the pulse state, thereby providing the load with high-frequency, low-power pulses and realizing high-yield plasma at the load end; and the other frequency of the dual-frequency driving device is used to match the impedance under the pulse gap at the load end, thereby providing the load with low-frequency, high-power pulses and realizing the cold start ignition function and plasma maintenance function at the load end, thereby solving the problem that a single-frequency pulse high-frequency ionization method cannot simultaneously take into account the power requirements of a specific frequency and the power requirements of the cold start ignition and ignition maintenance stages of the pulse high-frequency ionization device.

[0015] 2. The problem of consistency of the two sets of pulse steps is solved by making the continuous output high-frequency drive signal contain the frequency and amplitude characteristics for the cold start state; the pulse output high-frequency drive signal contain the frequency, amplitude, and delay characteristics for maintaining the plasma state; and the pulse output low-frequency drive signal contain the frequency, amplitude, and delay characteristics for high-yield plasma pulse generation. When the pulse high-frequency ionization device needs to generate plasma with high yield, the power received by the load is the power of the pulse stage, and when the pulse high-frequency ionization device needs cold start ignition or maintain the plasma state, the load receives the power of the pulse interval stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is an application effect diagram of the driving device of the present invention; Figure 2 This is a structural diagram of a dual-frequency driving device for a pulse high-frequency ionization device according to the present invention; Figure 3 This is a flow chart of the dual-frequency driving method of the present invention. DETAILED DESCRIPTION

[0017] The present invention will be further explained below in conjunction with the accompanying drawings: 1. Innovation of the present invention: The innovation is that a dual-frequency driving device is used to replace the single-frequency driving device of the prior art, and then a dual-frequency pulse high-frequency ionization device is used to replace the single-frequency pulse high-frequency ionization device (pulse high-frequency ionization device = driving device + power amplifier + matching device + load). The advantage of the dual-frequency driving device of the present invention is that by combining the dual-frequency driving device with a third-party power amplifier + adjustable dual-frequency vector impedance matching device, one frequency of the dual-frequency driving device is used to match the impedance of the load end in the pulse state, thereby providing the load with high-frequency low-power pulses and realizing high-yield plasma at the load end; and the other frequency of the dual-frequency driving device is used to match the impedance under the pulse gap at the load end, thereby providing the load with low-frequency high-power pulses and realizing the cold start ignition function and the plasma maintenance function at the load end, thereby solving the problem that the single-frequency pulse high-frequency ionization method cannot simultaneously take into account the power requirements of the specific frequency and the power requirements of the pulse high-frequency ionization device in the cold start ignition and ignition maintenance stages.

[0018] 2. Difficulty in the design of the present invention: The difficulty lies in how to ensure the consistency of the two sets of pulse steps. The two sets of pulses are high-frequency low-power pulses and low-frequency high-power pulses output from the low-power high-frequency power source and the high-power high-frequency power source. The consistency of the steps means that when the pulse high-frequency ionization device needs to produce plasma with high yield, the power received by the load is the power of the pulse stage; when the pulse high-frequency ionization device needs to cold start ignition or maintain the plasma state, the load receives the power of the pulse gap stage.

[0019] 3. Solution of the present invention: The present invention makes the dual-frequency signal (RFOUT40 and RFOUT41) to be amplified have the inherent frequency, amplitude and delay characteristics of the dual frequency, wherein the delay characteristic is used to adjust the early and late arrival of the pulse, the early means the delay time is short or 0, the late means the delay time is long, thereby ensuring that the high-frequency low-power pulse and the low-frequency high-power pulse are in step with each other.

[0020] Based on the above principle, the present invention designs a dual-frequency driving method for a pulse high-frequency ionization device. Figure 3 As shown, a dual-frequency driving method for a pulse high-frequency ionization device is based on a dual-frequency driving device for a pulse high-frequency ionization device, the dual-frequency driving device is used to provide a dual-frequency signal to be amplified for a third-party adjustable dual-frequency vector impedance matching device, the dual-frequency signal to be amplified inherently has dual-frequency frequency, amplitude and delay characteristics; the dual-frequency driving device is provided with: a dual-frequency signal controller 10, a dual-frequency sine / cosine digital waveform generator 20, a high-frequency high-frequency digital carrier modulation channel 30 and a low-frequency high-frequency digital carrier modulation channel 31, and a dual-high-frequency digital-to-analog conversion output driving module 40 in sequence from one side to the other; The dual-frequency signal controller 10 is used to generate a dual-frequency frequency control signal and a dual-frequency amplitude control signal with an intrinsic dual-frequency delay control characteristic, and send the dual-frequency frequency control signal to the dual-frequency sine / cosine digital waveform generator 20, and send the dual-frequency amplitude control signal with an intrinsic delay characteristic to the high-frequency and high-frequency digital carrier modulation path 30 and the low-frequency and high-frequency digital carrier modulation path 31 respectively; the dual-frequency sine / cosine digital waveform generator 20 is used to convert the received dual-frequency frequency control signal into a sine / cosine signal and send it to the high-frequency and high-frequency digital carrier modulation path 30 and the low-frequency and high-frequency digital carrier modulation path 31 respectively; the high-frequency and high-frequency digital carrier modulation path The path 30 is used to multiply the received sine / cosine signal by the received dual-frequency amplitude control signal with the inherent dual-frequency time delay control characteristic, so as to realize the modulation of the high-frequency and high-frequency digital carrier signal; the low-frequency and high-frequency digital carrier modulation path 31 is used to multiply the received sine / cosine signal by the received dual-frequency amplitude control signal with the inherent dual-frequency time delay control characteristic, so as to realize the modulation of the low-frequency and high-frequency digital carrier signal; the dual-high-frequency digital-to-analog conversion output drive module 40 is used to perform digital-to-analog conversion on the modulated high-frequency and high-frequency digital carrier signal and the modulated low-frequency and high-frequency digital carrier signal, and send the digital-to-analog converted signals to their respective power amplifiers; The characteristic is that the dual-frequency driving method comprises the following steps: Step 1: When the pulse high-frequency ionization device enters the cold start ignition state, a high-frequency driving signal for driving a low-power high-frequency power source generated by a dual-frequency driving device is continuously output to generate high-frequency low power for cold start ignition, and the high-frequency low-power pulse is fed into the pulse high-frequency ionization device through a third-party impedance matching device to ionize and generate plasma material; the continuously output high-frequency driving signal contains frequency and amplitude characteristics for the cold start state; Step 2: When the pulse high-frequency ionization device enters the plasma ignition state and maintenance state, the pulse output high-frequency driving signal generated by the dual-frequency driving device for driving the low-power high-frequency power source is Generate high frequency and low power for maintaining cold start ignition, and feed the high frequency and low power pulse to the pulse high frequency ionization device through a third-party impedance matching device, so as to maintain the continuous generation and existence of plasma material with a certain density and temperature inside the pulse high frequency ionization device; the high frequency driving signal output by the pulse contains frequency, amplitude and delay characteristics for maintaining the plasma existence state; Step three: When the pulse high-frequency ionization device enters a high-yield plasma pulse generation state, a pulse output low-frequency driving signal generated by a dual-frequency driving device for driving a high-power high-frequency power source generates a low-frequency and high-power for high-yield plasma generation, and the low-frequency and high-power pulse is fed into the pulse high-frequency ionization device through a third-party impedance matching device, so as to promote the violent ionization of the plasma in a short time and generate a large amount of plasma material that can be drawn out; the pulse output low-frequency driving signal contains frequency, amplitude, and delay characteristics for high-yield plasma pulse generation.

[0021] Furthermore, the specific process of step one is as follows: 1) When the pulse high-frequency ionization device performs cold start ignition, the high-frequency driving signal with continuous output generated by the dual-frequency driving device is sent to the low-power high-frequency power source; 2) The low-power high-frequency power source outputs a high-frequency low power of a certain frequency and amplitude corresponding to the continuously output high-frequency driving signal; 3) The high frequency and low power are transmitted to the pulse high frequency ionization device through the adjustable vector impedance matching device connected later; 4) Use this high frequency and low power to ignite the plasma of the pulsed high frequency ionization device.

[0022] Furthermore, the specific process of step 2 is as follows: 1) When the pulse high-frequency ionization device is maintaining the cold start ignition state, the high-frequency driving signal generated by the pulse output of the dual-frequency driving device is sent to the low-power high-frequency power source amplifier; 2) The low-power high-frequency power source outputs a high-frequency low power of a certain frequency and amplitude corresponding to the high-frequency driving signal output by the pulse; 3) The high frequency and low power are transmitted to the pulse high frequency ionization device through the adjustable vector impedance matching device connected later; 4) Use this high frequency and low power to maintain the plasma state.

[0023] Furthermore, the specific process of step three is as follows: 1) When the pulse high-frequency ionization device enters the high-yield plasma pulse generation (S3) state, the low-frequency high-power driving signal generated by the dual-frequency driving device is sent to the high-power high-frequency power source amplifier; 2) The high-power high-frequency power source amplifier outputs high-low-frequency high-power of a certain frequency and amplitude corresponding to the low-frequency high-power driving signal; 3) The high and low frequency high power is transmitted to the load through the adjustable vector impedance matching device connected later; 4) Use the high and low frequencies and high powers to generate a large amount of plasma material that can be drawn out.

[0024] Furthermore, the continuously output high-frequency driving signal contains frequency and amplitude characteristics for the cold start state, specifically: The frequency is preferably a frequency with the highest plasma ignition success rate or the shortest ignition time within the working bandwidth of the low-power high-frequency power source, and any frequency within the working bandwidth of the low-power high-frequency power source that can achieve a cold start ignition function can also be selected; The amplitude is preferably sufficient to drive the low-power high-frequency power source to output the high-frequency cold-start ignition power, and to achieve the driving signal amplitude corresponding to the minimum power of the plasma cold-start ignition function plus a sufficient margin through a third-party matching device; or preferably, the driving signal amplitude corresponding to the maximum output power that the low-power high-frequency power source can tolerate under instantaneous total reflection; or any value in between.

[0025] Furthermore, the high-frequency driving signal of the pulse output contains frequency, amplitude, and time delay characteristics for maintaining the plasma state, and its frequency, amplitude, and time delay characteristics are specifically: The frequency is preferably a frequency consistent with the cold start state, or a frequency that can maintain the plasma state within the working bandwidth of the low-power high-frequency power source and can minimize the high-frequency standing wave ratio; This amplitude forms a counter pulse complementary to the high-yield plasma pulse amplitude in each repetition cycle, and has a high duty cycle; the peak-to-peak value of the amplitude corresponds to the peak-to-peak value of the driving signal when the low-power high-frequency power source outputs full power; the low-power high-frequency power source is driven by the high-frequency driving signal output by the pulse.

[0026] The delay feature is 0 delay; The plasma-maintaining state refers to the plasma-maintaining state generated by the cold start state, or the plasma-maintaining state remaining after the high-yield plasma pulse generation state ends.

[0027] Furthermore, the low-frequency driving signal of the pulse output contains frequency, amplitude, and delay characteristics for generating high-yield plasma pulses, specifically: The frequency is optimized and adjusted according to the user's requirements for the specific working gas and plasma temperature, electron temperature, electron density and other properties of the pulsed high-frequency ionization device; The amplitude is a short pulse with the same repetition period as the amplitude characteristic of maintaining the plasma state, and has a low duty cycle; the peak-to-peak value of the amplitude corresponds to the peak-to-peak value of the driving signal when the high-power high-frequency power source is fully powered; the high-power high-frequency power source is driven by the high-frequency driving signal of the pulse output. The time delay is preferably the pulse width of the plasma state, so as to achieve the alternating appearance of short pulses of the high-yield plasma state and wide pulses of the plasma state.

[0028] Embodiment 1: A driving device for the dual-frequency driving method 1. In the preferred embodiment, the dual-frequency signal controller 10, the dual-frequency sine / cosine digital waveform generator 20, the high-frequency high-frequency digital carrier modulation path 30 and the low-frequency high-frequency digital carrier modulation path 31, which adopt an integrated all-digital design, are implemented by a field programmable gate array (FPGA) chip and ancillary circuits. The programmable system (PS) part of the FPGA chip acts as the dual-frequency signal controller (10) and implements a dual-frequency driving method for a pulse high-frequency ionization device according to the present invention. The high-frequency high-frequency control signal (FREQ10), the low-frequency high-frequency control signal (FREQ11), the high-frequency high-frequency path modulation signal (AMPL12) and the high-frequency high-frequency path modulation signal (AMPL13) are set according to the control signal (IN00 and / or IN01) from the host computer (00) and / or the control board (01) and / or the feedback signal (IN02) from the feedback board (02); the programmable logic (PS) part of the FPGA chip acts as the dual-frequency signal controller (10). The logic (PL) part coordinates and allocates its hardware resources, such as memory and gate circuits, to realize the dual-frequency sine / cosine digital waveform generator (20), the high-frequency high-frequency digital carrier modulation path (30) and the low-frequency high-frequency digital carrier modulation path (31).

[0029] 2. In the preferred embodiment, the dual-frequency sine / cosine digital waveform generator (20) can adopt direct digital synthesis (DDS) technology, with the help of the phase accumulator designed in the embodiment, through the addressing mode, generate the digital high-frequency high-frequency sine / cosine waveform signal (DWAV20) and the digital low-frequency high-frequency sine / cosine waveform signal (DWAV21) according to the high-frequency high-frequency frequency control signal (FREQ10) and the low-frequency high-frequency frequency control signal (FREQ11), the bit width of the phase accumulator is consistent with the bit width of the high-frequency high-frequency frequency control signal (FREQ10) and the low-frequency high-frequency frequency control signal (FREQ11), and meets the following conditions: FREQ10 bit width lower limit = [log2 (DWAV20 frequency ÷ DWAV20 frequency tolerance)] FREQ11 bit width lower limit = [log2 (DWAV21 frequency ÷ DWAV21 frequency tolerance)] For the digital high-frequency and high-frequency sine / cosine waveform signal (DWAV20) frequency fDWAV20 to be set and the digital clock frequency fclk required for the operation of the dual-frequency sine / cosine digital waveform generator (20), the high-frequency and high-frequency frequency control signal (FREQ10) should satisfy: FREQ10 = [fDWAV20÷fclk×2^FREQ10 bit width] Similarly, for the digital low-frequency high-frequency sine / cosine waveform signal (DWAV21) frequency fDWAV21 to be set, the low-frequency high-frequency frequency control signal (FREQ11) should satisfy: FREQ11 = [fDWAV21÷fclk×2^FREQ11 bit width] 3. The low-frequency high-frequency power described in the present invention can be set to a 2MHz high-power high-frequency power pulse with a duty cycle set to 2.5%, that is, the frequency of the digital low-frequency high-frequency sine / cosine waveform signal (DWAV21) to be set to fDWAV21=2MHz; the high-frequency high-frequency power described in the present invention can be set to a 13.56MHz high-frequency power reverse pulse with a duty cycle set to 97.5% or a continuous wave 13.56MHz high-frequency power, that is, the frequency of the digital high-frequency high-frequency sine / cosine waveform signal (DWAV20) to be set to fDWAV20=13.56MHz.

[0030] 4. In the embodiment of the present invention in which the digital clock frequency fclk=50MHz used in the above embodiment, preferably, the bit width of the DDS phase accumulator of the dual-frequency sine / cosine digital waveform generator (20) is consistent with the bit width of the high-frequency high-frequency control signal (FREQ10) and the low-frequency high-frequency control signal (FREQ11), and both are designed according to 16 bits (two bytes), so that the frequency tolerance of the digital high-frequency high-frequency sine / cosine waveform signal (DWAV20) and the digital low-frequency high-frequency sine / cosine waveform signal (DWAV21) introduced by the dual-frequency sine / cosine digital waveform generator (20) is better than 1kHz.

[0031] 5. In the above embodiment, the high-frequency and high-frequency control signal (FREQ10) is normally set to 16'b0100010101101101 (corresponding to the decimal number 17,773), so the actual output frequency of the digital high-frequency and high-frequency sine / cosine waveform signal (DWAV20) is approximately 13.559723 MHz; the low-frequency and high-frequency control signal (FREQ11) is normally set to 16'b0000101000111101 (corresponding to the decimal number 2,621), so the actual output frequency of the digital low-frequency and high-frequency sine / cosine waveform signal (DWAV21) is approximately 1.999664 MHz.

[0032] 6. By setting the bit width of the DDS phase accumulator of the dual-frequency sine / cosine digital waveform generator (20) to 16 bits in a manner consistent with the bit width of the high-frequency and high-frequency control signal (FREQ10) and the low-frequency and high-frequency control signal (FREQ11), the occupation of the storage resources of the FPGA chip described in the embodiment by the dual-frequency sine / cosine digital waveform generator (20) is limited to the greatest extent, while ensuring that the frequency tolerances of the digital high-frequency and high-frequency sine / cosine waveform signal (DWAV20) and the digital low-frequency and high-frequency sine / cosine waveform signal (DWAV21) are both better than 1 kHz, thereby reducing the cost of the dual-frequency driving device for a pulsed high-frequency ionization device proposed by the present invention.

[0033] 7. The high-frequency high-frequency control signal (FREQ10) and the low-frequency high-frequency control signal (FREQ11) can be changed by the dual-frequency signal controller (10) in and outside the corresponding pulse width through a write register operation, and a digital high-frequency high-frequency sine / cosine waveform signal (DWAV20) and a digital low-frequency high-frequency sine / cosine waveform signal (DWAV21) that are naturally continuous and smoother in phase are obtained, which is beneficial to reducing the instantaneous high-frequency standing wave caused by phase mutation in the high-frequency ionization device, reducing the protection frequency of the high-frequency power source, reducing its failure rate, and improving the reliability of the device.

[0034] 8. The high-frequency high-frequency path modulation signal (AMPL12) sent by the dual-frequency signal controller (10) to the high-frequency high-frequency digital carrier modulation path (30) and the low-frequency high-frequency path modulation signal (AMPL13) sent to the low-frequency high-frequency digital carrier modulation path (31) are both digital signals with a certain bit width, and their bit widths should be higher than: AMPL12 bit width lower limit = [log2 (AMPL12 amplitude ÷ AMPL12 amplitude tolerance)] AMPL13 bit width lower limit = [log2(AMPL13 amplitude ÷AMPL13 amplitude tolerance)] The digital high-frequency and high-frequency sine / cosine waveform signal (DWAV20) sent by the dual-frequency sine / cosine digital waveform generator (20) to the high-frequency and high-frequency digital carrier modulation path (30) and the digital low-frequency and high-frequency sine / cosine waveform signal (DWAV21) sent to the low-frequency and high-frequency digital carrier modulation path (31) are both digital signals with a certain bit width, and the digital high-frequency and high-frequency modulated signal (DMOD30) sent by the high-frequency and high-frequency digital carrier modulation path (30) to the dual-frequency digital-to-analog conversion output drive module (40) and the digital low-frequency and high-frequency modulated signal (DMOD31) sent by the low-frequency and high-frequency digital carrier modulation path (31) to the dual-frequency digital-to-analog conversion output drive module (40) are both digital signals with a certain bit width, and the bit width satisfies: DMOD30 bit width = DWAV20 bit width + AMPL12 bit width DMOD31 bit width = DWAV21 bit width + AMPL13 bit width 9. The bit widths of the digital high-frequency high-frequency modulated signal (DMOD30) and the digital low-frequency high-frequency modulated signal (DMOD31) are limited by the dual high-frequency digital-to-analog conversion output drive module (40).

[0035] The above contents are merely examples and explanations of the concept of the present invention. The technicians in this technical field may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the concept of the invention or exceed the scope defined by the claims, they should all fall within the protection scope of the present invention.

Claims

1. A dual-frequency driving method for a pulse high-frequency ionization device, the dual-frequency driving method is based on a dual-frequency driving device for a pulse high-frequency ionization device, the dual-frequency driving device is used to provide a dual-frequency signal to be amplified for a third-party adjustable dual-frequency vector impedance matching device, the dual-frequency signal to be amplified inherently has dual-frequency frequency, amplitude and delay characteristics; the dual-frequency driving device is provided with: a dual-frequency signal controller (10), a dual-frequency sine / cosine digital waveform generator (20), a high-frequency high-frequency digital carrier modulation channel (30) and a low-frequency high-frequency digital carrier modulation channel (31), and a dual-high-frequency digital-to-analog conversion output drive module (40) in sequence from one side to the other side; The dual-frequency signal controller (10) is used to generate a dual-frequency frequency control signal and a dual-frequency amplitude control signal with an inherent dual-frequency delay control characteristic, and send the dual-frequency frequency control signal to a dual-frequency sine / cosine digital waveform generator (20), and send the dual-frequency amplitude control signal with an inherent delay characteristic to a high-frequency high-frequency digital carrier modulation path (30) and a low-frequency high-frequency digital carrier modulation path (31) respectively; the dual-frequency sine / cosine digital waveform generator (20) is used to convert the received dual-frequency frequency control signal into a sine / cosine signal and send it to the high-frequency high-frequency digital carrier modulation path (30) and the low-frequency high-frequency digital carrier modulation path (31) respectively; the high-frequency high-frequency digital The carrier modulation path (30) is used to multiply the received sine / cosine signal by the received dual-frequency amplitude control signal with an inherent dual-frequency time delay control characteristic, thereby realizing modulation of the high-frequency and high-frequency digital carrier signal; the low-frequency and high-frequency digital carrier modulation path (31) is used to multiply the received sine / cosine signal by the received dual-frequency amplitude control signal with an inherent dual-frequency time delay control characteristic, thereby realizing modulation of the low-frequency and high-frequency digital carrier signal; the dual-high-frequency digital-to-analog conversion output drive module (40) is used to perform digital-to-analog conversion on the modulated high-frequency and high-frequency digital carrier signal and the modulated low-frequency and high-frequency digital carrier signal, and send the digital-to-analog converted signals to respective power amplifiers; Features: The dual-frequency driving method comprises the following steps: Step 1: When the pulse high-frequency ionization device enters the cold start ignition state, a high-frequency driving signal for driving a low-power high-frequency power source generated by a dual-frequency driving device is continuously output to generate high-frequency low power for cold start ignition, and the high-frequency low-power pulse is fed into the pulse high-frequency ionization device through a third-party impedance matching device to ionize and generate plasma material; the continuously output high-frequency driving signal contains frequency and amplitude characteristics for the cold start state; Step 2: When the pulse high-frequency ionization device enters the plasma ignition state and maintenance state, the pulse output high-frequency driving signal generated by the dual-frequency driving device for driving the low-power high-frequency power source is Generate high frequency and low power for maintaining cold start ignition, and feed the high frequency and low power pulse to the pulse high frequency ionization device through a third-party impedance matching device, so as to maintain the continuous generation and existence of plasma material with a certain density and temperature inside the pulse high frequency ionization device; the high frequency driving signal output by the pulse contains frequency, amplitude and delay characteristics for maintaining the plasma existence state; Step three: When the pulse high-frequency ionization device enters a high-yield plasma pulse generation state, a pulse output low-frequency driving signal generated by a dual-frequency driving device for driving a high-power high-frequency power source generates a low-frequency and high-power for high-yield plasma generation, and the low-frequency and high-power pulse is fed into the pulse high-frequency ionization device through a third-party impedance matching device, so as to promote the violent ionization of the plasma in a short time and generate a large amount of plasma material that can be drawn out; the pulse output low-frequency driving signal contains frequency, amplitude, and delay characteristics for high-yield plasma pulse generation.

2. A dual-frequency driving method for a pulse high-frequency ionization device according to claim 1, characterized in that: The specific process of step one is as follows: 1) When the pulse high-frequency ionization device performs cold start ignition, the high-frequency driving signal with continuous output generated by the dual-frequency driving device is sent to the low-power high-frequency power source; 2) The low-power high-frequency power source outputs a high-frequency low power of a certain frequency and amplitude corresponding to the continuously output high-frequency driving signal; 3) The high frequency and low power are transmitted to the pulse high frequency ionization device through the adjustable vector impedance matching device connected later; 4) Use this high frequency and low power to ignite the plasma of the pulsed high frequency ionization device.

3. A dual-frequency driving method for a pulse high-frequency ionization device according to claim 1, characterized in that: The specific process of step 2 is as follows: 1) When the pulse high-frequency ionization device is maintaining the cold start ignition state, the high-frequency driving signal generated by the pulse output of the dual-frequency driving device is sent to the low-power high-frequency power source amplifier; 2) The low-power high-frequency power source outputs a high-frequency low power of a certain frequency and amplitude corresponding to the high-frequency driving signal output by the pulse; 3) The high frequency and low power are transmitted to the pulse high frequency ionization device through the adjustable vector impedance matching device connected later; 4) Use this high frequency and low power to maintain the plasma state.

4. A dual-frequency driving method for a pulse high-frequency ionization device according to claim 1, characterized in that: The specific process of step three is as follows: 1) When the pulse high-frequency ionization device enters the high-yield plasma pulse generation (S3) state, the low-frequency high-power driving signal generated by the dual-frequency driving device is sent to the high-power high-frequency power source amplifier; 2) The high-power high-frequency power source amplifier outputs high-low-frequency high-power of a certain frequency and amplitude corresponding to the low-frequency high-power driving signal; 3) The high and low frequency high power is transmitted to the load through the adjustable vector impedance matching device connected later; 4) Use the high and low frequencies and high powers to generate a large amount of plasma material that can be drawn out.

5. The dual-frequency driving method for a pulse high-frequency ionization device according to claim 1, characterized in that: The continuously output high-frequency driving signal contains frequency and amplitude characteristics for the cold start state, specifically: The frequency is preferably a frequency with the highest plasma ignition success rate or the shortest ignition time within the working bandwidth of the low-power high-frequency power source, and any frequency within the working bandwidth of the low-power high-frequency power source that can achieve a cold start ignition function can also be selected; The amplitude is preferably sufficient to drive the low-power high-frequency power source to output the high-frequency cold-start ignition power, and to achieve the minimum power corresponding to the driving signal amplitude of the plasma cold-start ignition function plus a sufficient margin through the third-party matching device; or preferably, the driving signal amplitude corresponding to the maximum output power that the low-power high-frequency power source can tolerate under instantaneous total reflection; Or any value in between.

6. A dual-frequency driving method for a pulse high-frequency ionization device according to claim 1, characterized in that: The high-frequency driving signal output by the pulse contains frequency, amplitude, and time delay characteristics for maintaining the plasma state. The frequency, amplitude, and time delay characteristics are specifically as follows: The frequency is preferably a frequency consistent with the cold start state, or a frequency that can maintain the plasma state within the working bandwidth of the low-power high-frequency power source and can minimize the high-frequency standing wave ratio; The amplitude forms a reverse pulse complementary to the high-yield plasma pulse amplitude in each repetition cycle, and has a high duty cycle; the peak-to-peak value of the amplitude corresponds to the peak-to-peak value of the driving signal when the low-power high-frequency power source outputs full power; the low-power high-frequency power source is driven by the high-frequency driving signal output by the pulse; The delay feature is 0 delay; The plasma-maintaining state refers to the plasma-maintaining state generated by the cold start state, or the plasma-maintaining state remaining after the high-yield plasma pulse generation state ends.

7. A dual-frequency driving method for a pulse high-frequency ionization device according to claim 1, characterized in that: The low-frequency driving signal of the pulse output contains the frequency, amplitude, and delay characteristics for generating high-yield plasma pulses, specifically: The frequency is optimized and adjusted according to the user's requirements for the specific working gas and plasma temperature, electron temperature, electron density and other properties of the pulsed high-frequency ionization device; The amplitude is a short pulse with the same repetition period as the amplitude characteristic of maintaining the plasma survival state, and has a low duty cycle; the peak-to-peak value of the amplitude corresponds to the peak-to-peak value of the driving signal when the high-power high-frequency power source outputs full power; the high-power high-frequency power source is driven by the high-frequency driving signal of the pulse output; the time delay is preferably the pulse width of the plasma survival state, thereby realizing the alternating appearance of short pulses in the high-yield plasma state and wide pulses in the plasma survival state.

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