Thermal ultrasonic spherical gold wire bonded gold bump preparation method, flip-chip bonding structure and chip

Abstract

The invention discloses a gold bump preparation method for thermal ultrasonic spherical gold wire bonding, a flip-chip bonding structure and a chip, and relates to the field of chips. According to the mass fraction, the method comprises the following steps that a plurality of gold protruding points are formed on a flip-chip bonding pad through hot ultrasonic spherical gold wire bonding, and the width of the flip-chip bonding pad is larger than or equal to 150 micrometers. A plurality of gold bumps are formed through thermal ultrasonic spherical gold wire bonding, so that the plurality of gold bumps can support a flip-chip bonding pad with the width greater than or equal to 150 [mu] m for a large-size chip. Based on the specific requirements of gold wires with different diameters and the sizes of the bonding pads, combined preparation of various gold bumps is performed, the contact area of the bonding pads on the flip chip and the bonding pads on the substrate is increased, electrical signal interconnection between the bonding pads is completed, the gold bump process replaces micro gold bumps and copper columns which are high in cost and complex in process, the cost can be reduced, and the production efficiency is improved. The efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of chip technology, and in particular to a method for preparing gold bumps by thermal ultrasonic spherical gold wire bonding, a flip-chip bonding structure and a chip. Background Art

[0002] In the advanced packaging technology of semiconductor integrated circuit chips, flip chip bonding technology is usually used. The implementation of flip chip bonding process requires micro gold bump structure or copper pillar structure, C4 (Controlled Collapse Chip Connection) gold bump structure, solder ball structure, etc. as mechanical support and electrical signal interconnection solder joints.

[0003] The preparation process of the micro-bumping structure or micro-copper pillar structure required for flip chip bonding is complex and the manufacturing cost is high, second only to the chip manufacturing cost. A single gold bump is formed by ultrasonic bonding, and the lateral diameter is usually ≤90μm. It is difficult to use the flip chip bonding technology between larger pads (≥150μm) to achieve the purpose of electrical signal interconnection. It cannot effectively support large-sized chips, and the reliability of electrical signal interconnection cannot be ensured after flip chip bonding. Summary of the invention

[0004] The present application provides a method for preparing gold bumps by thermal ultrasonic spherical gold wire bonding, a flip-chip bonding structure and a chip to solve the problems of complex preparation process and high manufacturing cost in the prior art.

[0005] The existing technology mainly makes micro-gold bumps or micro-copper pillar structures on the entire wafer. Making these structures on a single chip has high requirements for chip protection, especially for optical chips. The existence of optical ports has very demanding requirements on the ball planting process. The chip is easily contaminated, which reduces the yield.

[0006] Gold wire thermosonic bonding is a key technology for achieving electrical interconnection between multi-chip components and printed circuit boards (PCBs). The quality of gold wire bonding directly affects the reliability and stability of the circuit, especially the high-frequency characteristics of the circuit. Gold wire thermosonic bonding is mainly divided into spherical bonding and wedge bonding according to the application scenario.

[0007] Thermosonic spherical gold wire bonding is a widely used technology in the field of microelectronic packaging. It is mainly used to achieve the key process of electrical interconnection between chips and substrates. Thermosonic spherical gold wire bonding is a key technology used to connect chips and carriers in the semiconductor manufacturing process. It combines the advantages of hot pressure welding and ultrasonic welding, and forms a stable connection point by applying pressure, ultrasonic energy and heat energy between the metal gold wire and the pad. The specific process includes melting the end of the gold wire to form a small ball, and then pressing the gold ball onto the pad of the chip or substrate to complete the first solder joint. Then, the gold wire is pulled to a specific position and pressed onto the second pad to form the second solder joint, and finally the gold wire is torn off, leaving a tail section for the next bonding cycle.

[0008] Flip chip bonding is a microelectronic packaging technology that achieves high-density, high-performance interconnection by connecting the chip face down to the substrate. Flip chip bonding is an advanced semiconductor packaging technology that, unlike traditional wire bonding, connects directly to the substrate through the gold bump electrodes on the chip. This technology is called "flip" because the chip is placed face down on the substrate during the packaging process. Flip chip bonding technology has many significant advantages. Since the chip is directly connected to the substrate through the gold bumps, the package volume is greatly reduced, and the integration and circuit performance are improved. At the same time, the path of current through the gold bumps is shorter, which can effectively increase the signal transmission speed and reduce signal loss. Flip chip bonding also has better thermal management capabilities because heat can be transferred directly from the chip to the substrate through the gold bumps, thereby effectively dissipating heat.

[0009] In a first aspect, the present application provides a method for preparing gold bumps by thermosonic spherical gold wire bonding, comprising the following steps:

[0010] forming a plurality of gold bumps by thermosonic ball gold wire bonding on the flip-chip bonding pad;

[0011] Wherein, the width of the flip-chip bonding pad is greater than or equal to 150 μm.

[0012] In the present application, multiple gold bumps are formed by thermal ultrasonic spherical gold wire bonding, so that multiple gold bumps can realize the support of large-size chips for flip-chip bonding pads with a width greater than or equal to 150μm. Based on gold wires of different diameters and the specific requirements of pad size, various types of gold bumps are prepared in combination to increase the contact area between the pads on the flip-chip and the pads on the substrate, and complete the electrical signal interconnection between the pads. The gold bump process replaces the expensive and complex micro-gold bumps and copper pillars, which can reduce costs and improve efficiency. The gold bumps are designed to be multiple, which can meet the bonding patch requirements of different pad sizes. Based on the combination of gold bump types with different diameters, different types of bonding pads are prepared, and multiple gold bumps are prepared on the pads, which can significantly increase the contact area between the flip-chip welding chip and the substrate pad solder joint, increase the welding strength, and improve the reliability of electrical signal interconnection.

[0013] In some embodiments, the diameter of the gold wire for thermal ultrasonic spherical gold wire bonding is d1, 13μm≤d1≤100μm. The diameter of the gold wire for thermal ultrasonic spherical gold wire bonding is within this range, which can improve the interconnection density and packaging integration, has good electrical properties, and has good process stability and practical operability.

[0014] In some embodiments, the spacing between adjacent gold bumps is L, L ≥ 5 μm. The spacing between gold bumps is a key parameter that determines the packaging density and circuit complexity, and has an important impact on the performance and reliability of the chip. When the spacing between gold bumps is small, the current will generate large resistance and inductance when passing through the narrow path between gold bumps, which will affect the electrical performance of the chip. The smaller spacing between gold bumps increases the capacitance between gold bumps, which will cause signal crosstalk and power integrity problems, thereby affecting the overall performance of the chip. The reduction in the spacing between gold bumps will lead to a decrease in the ability to spread heat on the chip. The reduction in the distance between gold bumps will reduce the space for air flow, thereby reducing the heat dissipation effect brought by natural convection, causing the temperature of the chip to rise during long-term operation, affecting its performance and stability. The requirements for accuracy in the spacing between gold bumps are extremely high, and any slight deviation may cause a short circuit between gold bumps, thereby affecting the reliability of the entire chip. At the same time, when the spacing between gold bumps is small, the gold bumps are more likely to be deformed or damaged when subjected to external forces. When the spacing between adjacent gold bumps is within this range, short circuits between gold balls can be reduced, and high interconnection density and high packaging integration can be achieved.

[0015] In some embodiments, the diameter of the gold bump is d2, 26μm≤d2≤300μm. When the diameter of the gold bump is large, the resistance and inductance generated by the current passing through the gold bump are small, which helps to improve the electrical performance of the chip, reduce the capacitance between the gold bumps, reduce signal crosstalk, improve power integrity, and thus improve the overall performance of the chip. The increase in the diameter of the gold bump may enhance the ability to spread heat on the chip. The increase in the diameter of the gold bump increases the area of ​​the gold bump, and the heat can be spread through a larger surface area, thereby improving the heat dissipation effect of the chip. The larger diameter of the gold bump has lower requirements for precision during the manufacturing process, which can reduce the risk of short circuits during the manufacturing process, thereby enhancing the reliability of the entire chip. At the same time, the gold bump has a large diameter, and the gold bump is not easily deformed or damaged when subjected to external forces. The diameter of the gold bump is within this range, which can ensure the quality of the bonding solder joint between the gold bump and the pad and good electrical performance, while ensuring a high interconnection density and a small package size.

[0016] In some embodiments, the height of the gold bump is H1, 10μm≤H1≤150μm. When the height of the gold bump is appropriate, the resistance and inductance can be reduced, which helps to improve the electrical performance of the chip. The appropriate bump height can also effectively reduce signal crosstalk and power integrity issues, thereby improving the overall performance of the chip. Gold bumps of different heights will be subject to different shear forces. The appropriate gold bump height can improve the mechanical strength and reliability of the package. When the height of the gold bump is within this range, the interconnection density can be made higher while ensuring the feasibility of the bottom filling process.

[0017] In some embodiments, the shoulder height of the gold bump is H2, 3μm≤H2≤12μm. When the shoulder height of the gold bump is within this range, a good solder joint can be formed to improve electrical performance.

[0018] In some embodiments, the deviation value of the height of the gold bump is s, -2μm≤s≤2μm, and the height deviation value of the gold bump refers to the difference between the height of the gold bump and the average height. Gold bumps with small height deviation can ensure that each gold bump can be evenly contacted during the bonding process, thereby improving the reliability of the connection. Consistent gold bump height helps to evenly distribute stress and reduce the risk of failure due to stress concentration. The height deviation value of the gold bump is within this range, which can enable electrical signal interconnection during subsequent flip-chip mounting, reduce the probability of insufficient contact between the top of the gold bump and the pad or bump of the mounted chip, reduce the impact on solder joint quality and reliability, and improve electrical performance.

[0019] In a second aspect, the present application proposes a flip-chip bonding structure, including gold bumps made by the gold bump preparation method of the first aspect using thermal ultrasonic spherical gold wire bonding.

[0020] In a third aspect, the present application provides a chip, comprising the flip-chip bonding structure of the second aspect.

[0021] In a fourth aspect, the present application provides a processor comprising the chip of the third aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 The process flow chart of a method for preparing gold bumps by thermosonic ball gold wire bonding according to an embodiment of the present application. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0025] In the advanced packaging technology of semiconductor integrated circuit chips, flip chip bonding technology is usually used. The implementation of flip chip bonding process requires micro gold bump structure or copper pillar structure, C4 (Controlled Collapse Chip Connection) gold bump structure, solder ball structure, etc. as mechanical support and electrical signal interconnection solder joints.

[0026] The preparation process of the micro-bumping structure or micro-copper pillar structure required for flip chip bonding is complex and the manufacturing cost is high, second only to the chip manufacturing cost. A single gold bump is formed by ultrasonic bonding, and the lateral diameter is usually ≤90μm. It is difficult to use the flip chip bonding technology between larger pads (≥150μm) to achieve the purpose of electrical signal interconnection. It cannot effectively support large-sized chips, and the reliability of electrical signal interconnection cannot be ensured after flip chip bonding.

[0027] In view of this, the present application provides a method for preparing gold bumps by thermal ultrasonic spherical gold wire bonding and a processing method thereof, chassis parts and automobiles to solve the problem of insufficient toughness of existing non-quenched and tempered steel.

[0028] The existing technology mainly makes micro-gold bumps or micro-copper pillar structures on the entire wafer. Making these structures on a single chip has high requirements for chip protection, especially for optical chips. The existence of optical ports has very demanding requirements on the ball planting process. The chip is easily contaminated, which reduces the yield.

[0029] Gold wire thermosonic bonding is a key technology for achieving electrical interconnection between multi-chip components and printed circuit boards (PCBs). The quality of gold wire bonding directly affects the reliability and stability of the circuit, especially the high-frequency characteristics of the circuit. Gold wire thermosonic bonding is mainly divided into spherical bonding and wedge bonding according to the application scenario.

[0030] Thermosonic spherical gold wire bonding is a widely used technology in the field of microelectronic packaging. It is mainly used to achieve the key process of electrical interconnection between chips and substrates. Thermosonic spherical gold wire bonding is a key technology used to connect chips and carriers in the semiconductor manufacturing process. It combines the advantages of hot pressure welding and ultrasonic welding, and forms a stable connection point by applying pressure, ultrasonic energy and heat energy between the metal gold wire and the pad. The specific process includes melting the end of the gold wire to form a small ball, and then pressing the gold ball onto the pad of the chip or substrate to complete the first solder joint. Then, the gold wire is pulled to a specific position and pressed onto the second pad to form the second solder joint, and finally the gold wire is torn off, leaving a tail section for the next bonding cycle.

[0031] Flip chip bonding is a microelectronic packaging technology that achieves high-density, high-performance interconnection by connecting the chip face down to the substrate. Flip chip bonding is an advanced semiconductor packaging technology that, unlike traditional wire bonding, connects directly to the substrate through the gold bump electrodes on the chip. This technology is called "flip" because the chip is placed face down on the substrate during the packaging process. Flip chip bonding technology has many significant advantages. Since the chip is directly connected to the substrate through the gold bumps, the package volume is greatly reduced, and the integration and circuit performance are improved. At the same time, the path of current through the gold bumps is shorter, which can effectively increase the signal transmission speed and reduce signal loss. Flip chip bonding also has better thermal management capabilities because heat can be transferred directly from the chip to the substrate through the gold bumps, thereby effectively dissipating heat.

[0032] First, as Figure 1 As shown, the present application provides a method for preparing gold bumps by thermal ultrasonic spherical gold wire bonding, comprising the following steps:

[0033] forming a plurality of gold bumps by thermosonic ball gold wire bonding on the flip-chip bonding pad;

[0034] Wherein, the width of the flip-chip bonding pad is greater than or equal to 150 μm.

[0035] In the present application, multiple gold bumps are formed by thermal ultrasonic spherical gold wire bonding, so that multiple gold bumps can realize the support of large-size chips for flip-chip bonding pads with a width greater than or equal to 150μm. Based on gold wires of different diameters and the specific requirements of pad size, various types of gold bumps are prepared in combination to increase the contact area between the pads on the flip-chip and the pads on the substrate, and complete the electrical signal interconnection between the pads. The gold bump process replaces the expensive and complex micro-gold bumps and copper pillars, which can reduce costs and improve efficiency. The gold bumps are designed to be multiple, which can meet the bonding patch requirements of different pad sizes. Based on the combination of gold bump types with different diameters, different types of bonding pads are prepared, and multiple gold bumps are prepared on the pads, which can significantly increase the contact area between the flip-chip welding chip and the substrate pad solder joint, increase the welding strength, and improve the reliability of electrical signal interconnection.

[0036] In combination with the first aspect, in some embodiments provided in the present application, the diameter of the gold wire for thermal ultrasonic spherical gold wire bonding is d1, 13μm≤d1≤100μm, and the diameter of the gold wire for thermal ultrasonic spherical gold wire bonding is within this range, which can improve the interconnection density and packaging integration, have good electrical properties, and have good process stability and practical operability. The diameter of the gold wire for thermal ultrasonic spherical gold wire bonding includes but is not limited to 13μm, 15μm, 20μm, 25μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm or 100μm.

[0037] In combination with the first aspect, in some embodiments provided in the present application, the spacing between adjacent gold bumps is L, L≥5μm, and the spacing between the gold bumps is a key parameter that determines the packaging density and circuit complexity, and has an important impact on the performance and reliability of the chip. When the spacing between the gold bumps is small, the current will generate a large resistance and inductance when passing through the narrow path between the gold bumps, which will affect the electrical performance of the chip. The smaller spacing between the gold bumps increases the capacitance between the gold bumps, which will cause signal crosstalk and power integrity problems, thereby affecting the overall performance of the chip. The reduction in the spacing between the gold bumps will lead to a decrease in the ability to spread heat on the chip, and the reduction in the distance between the gold bumps will reduce the space for air flow, thereby reducing the heat dissipation effect brought by natural convection, which will cause the temperature of the chip to rise during long-term operation, affecting its performance and stability. The requirements for accuracy in the spacing between the gold bumps are extremely high, and any slight deviation may cause a short circuit between the gold bumps, thereby affecting the reliability of the entire chip. At the same time, the spacing between the gold bumps is small, and when subjected to external forces, the gold bumps are more likely to be deformed or damaged. The spacing between adjacent gold bumps is within this range, which can reduce the probability of short circuits between gold balls, achieve high interconnection density, and high packaging integration. The outer edge of the wedge can be aligned with the edge of the adjacent gold bump in the vertical direction to ensure that the spacing between the edges of the two gold bumps is as small as possible, so as to prepare higher density gold bumps on the same pad area size.

[0038] In combination with the first aspect, in some embodiments provided in the present application, the diameter of the gold bump is d2, 26μm≤d2≤300μm, when the diameter of the gold bump is large, the resistance and inductance generated by the current when passing through the gold bump are small, which helps to improve the electrical performance of the chip, reduce the capacitance between the gold bumps, reduce signal crosstalk, improve power integrity, and thus improve the overall performance of the chip. The increase in the diameter of the gold bump may enhance the ability of heat dissipation on the chip. The increase in the diameter of the gold bump increases the area of ​​the gold bump, and the heat can be spread through a larger surface area, thereby improving the heat dissipation effect of the chip. The larger diameter of the gold bump has lower requirements for precision during the manufacturing process, which can reduce the risk of short circuits during the manufacturing process, thereby enhancing the reliability of the entire chip. At the same time, the gold bump has a large diameter, and when subjected to external forces, the gold bump is not easily deformed or damaged. Within this range, the diameter of the gold bump can make the gold bump firmly bonded to the pad, with high reliability and good electrical performance, while also ensuring high interconnection density and high packaging integration. The diameter of the gold bump includes, but is not limited to, 26 μm, 30 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 170 μm, 200 μm, 220 μm, 250 μm, 280 μm or 300 μm.

[0039] In combination with the first aspect, in some embodiments provided in the present application, the height of the gold bump is H1, 10μm≤H1≤150μm. When the height of the gold bump is appropriate, the resistance and inductance can be reduced, which helps to improve the electrical performance of the chip. The appropriate bump height can also effectively reduce signal crosstalk and power integrity problems, thereby improving the overall performance of the chip. Gold bumps of different heights will be subject to different shear forces. The appropriate gold bump height can improve the mechanical strength and reliability of the package. The height of the gold bump is within this range, which can make the interconnection density higher and ensure the feasibility of the bottom filling process. The height of the gold bump includes but is not limited to 10μm, 30μm, 50μm, 70μm, 100μm, 120μm or 150μm.

[0040] In combination with the first aspect, in some embodiments provided in the present application, the shoulder height of the gold bump is H2, 3μm≤H2≤12μm, and the shoulder height of the gold bump is within this range, which can form a good solder joint and improve electrical performance. The shoulder height of the gold bump includes but is not limited to 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm, 10μm, 11μm or 12μm.

[0041] In combination with the first aspect, in some embodiments provided in the present application, the deviation value of the height of the gold bump is s, -2μm≤s≤2μm, the height deviation value of the gold bump refers to the difference between the height of the gold bump and the average height, and the gold bump with a small height deviation can ensure that each gold bump can be evenly contacted during the bonding process, thereby improving the reliability of the connection, and the consistent height of the gold bump helps to evenly distribute stress and reduce the risk of failure caused by stress concentration. The deviation value of the height of the gold bump is within this range, which can enable subsequent flip-chip bonding to achieve electrical signal interconnection, reduce the probability of insufficient contact between the top of the gold bump and the pad or bump of the mounted chip, reduce the impact on the quality and reliability of the solder joint, and improve electrical performance. The deviation value of the height of the gold bump includes but is not limited to -2μm, -1μm, 0μm, 1μm or 2μm.

[0042] In the second aspect, the present application proposes a flip-chip bonding structure, including a gold bump made by the method for preparing a gold bump by thermal ultrasonic spherical gold wire bonding according to the first aspect. The flip-chip bonding structure has all the technical solutions of the method for preparing a gold bump by thermal ultrasonic spherical gold wire bonding, and thus has all the beneficial effects of the method for preparing a gold bump by thermal ultrasonic spherical gold wire bonding, which will not be described in detail in this application.

[0043] In a third aspect, the present application provides a chip, comprising the flip-chip bonding structure of the second aspect. The chip has all the technical solutions of the method for preparing gold bumps by thermal ultrasonic spherical gold wire bonding, and thus has all the beneficial effects of the method for preparing gold bumps by thermal ultrasonic spherical gold wire bonding, which will not be described in detail in this application.

[0044] In a fourth aspect, the application provides a processor, comprising the chip of the third aspect. The processor has all the technical solutions of the method for preparing gold bumps by thermosonic spherical gold wire bonding, and thus has all the beneficial effects of the method for preparing gold bumps by thermosonic spherical gold wire bonding, which will not be described in detail in this application.

[0045] The technical solution provided in this application is described in detail below in conjunction with embodiments.

[0046] Example 1

[0047] Embodiment 1 of the present application provides a method for preparing a gold bump by thermosonic spherical gold wire bonding, comprising the following steps:

[0048] forming a plurality of gold bumps by thermosonic ball gold wire bonding on the flip-chip bonding pad;

[0049] Wherein: the width of the flip-chip bonding pad is 200 μm;

[0050] The diameter of the gold wire for thermosonic spherical gold wire bonding is 25 μm;

[0051] The spacing between adjacent gold bumps is 5 μm;

[0052] The diameter of the gold bump is 75 μm;

[0053] The height of the gold bump is 38 μm;

[0054] The shoulder height of the gold bump is 12 μm;

[0055] The deviation value of the height of the gold bumps was 2 μm.

[0056] Example 2

[0057] Embodiment 2 of the present application provides a method for preparing a gold bump by thermosonic spherical gold wire bonding, comprising the following steps:

[0058] forming a plurality of gold bumps by thermosonic ball gold wire bonding on the flip-chip bonding pad;

[0059] Wherein: the width of the flip-chip bonding pad is 200 μm;

[0060] The diameter of the gold wire for thermosonic spherical gold wire bonding is 25 μm;

[0061] The spacing between adjacent gold bumps is 5 μm;

[0062] The diameter of the gold bump is 50 μm;

[0063] The height of the gold bump is 17 μm;

[0064] The shoulder height of the gold bump is 3 μm;

[0065] The deviation value of the height of the gold bumps was -2 μm.

[0066] Example 3

[0067] Embodiment 3 of the present application provides a method for preparing a gold bump by thermosonic spherical gold wire bonding, comprising the following steps:

[0068] forming a plurality of gold bumps by thermosonic ball gold wire bonding on the flip-chip bonding pad;

[0069] Wherein: the width of the flip-chip bonding pad is 200 μm;

[0070] The diameter of the gold wire for thermosonic spherical gold wire bonding is 25 μm;

[0071] The spacing between adjacent gold bumps is 5 μm;

[0072] The diameter of the gold bump is 62.5 μm;

[0073] The height of the gold bump is 26 μm;

[0074] The shoulder height of the gold bump is 7.5;

[0075] The deviation value of the height of the gold bumps was 1 μm.

[0076] In summary, multiple gold bumps can be formed by thermal ultrasonic spherical gold wire bonding, which can enable multiple gold bumps to support large-size chips for flip-chip bonding pads with a width greater than or equal to 150μm. Based on gold wires of different diameters and specific requirements for pad size, various gold bumps are prepared in combination to increase the contact area between the pads on the flip chip and the pads on the substrate, and complete the electrical signal interconnection between the pads. The gold bump process replaces the expensive and complex micro-gold bumps and copper pillars, which can reduce costs and improve efficiency.

[0077] In the description of this specification, the description with reference to the terms "one embodiment / method", "some embodiments / methods", "example", "specific example" or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment / method or example are included in at least one embodiment / method or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment / method or example. Moreover, the specific features, structures, materials or characteristics described may be combined in a suitable manner in any one or more embodiments / methods or examples. In addition, those skilled in the art may combine and combine the different embodiments / methods or examples described in this specification and the features of the different embodiments / methods or examples, unless they are contradictory.

[0078] It should be noted that, in the present application, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements defined by the sentence "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements. In the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically stipulated.

[0079] The above description is only a specific implementation of the present application, so that those skilled in the art can understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest range consistent with the principles and novel features applied for herein.

Claims

1. A method for preparing gold bumps by thermosonic spherical gold wire bonding, characterized in that: The following steps are involved: forming a plurality of gold bumps by thermosonic ball gold wire bonding on the flip-chip bonding pad; Wherein, the width of the flip-chip bonding pad is greater than or equal to 150 μm.

2. The method for preparing gold bumps by thermosonic spherical gold wire bonding according to claim 1, characterized in that: The diameter of the gold wire for thermal ultrasonic spherical gold wire bonding is d1, 13μm≤d1≤100μm.

3. The method for preparing gold bumps by thermosonic spherical gold wire bonding according to claim 1, characterized in that: The distance between adjacent gold bumps is L, L≥5μm.

4. The method for preparing gold bumps by thermosonic spherical gold wire bonding according to claim 1, characterized in that: The diameter of the gold bump is d2, 26 μm≤d2≤300 μm.

5. The method for preparing gold bumps by thermosonic spherical gold wire bonding according to claim 1, characterized in that: The height of the gold bump is H1, 10 μm≤H1≤150 μm.

6. The method for preparing gold bumps by thermosonic spherical gold wire bonding according to claim 1, characterized in that: The shoulder height of the gold bump is H2, 3μm≤H2≤12μm.

7. The method for preparing gold bumps by thermosonic spherical gold wire bonding according to claim 1, characterized in that: The deviation value of the height of the gold bump is s, -2μm≤s≤2μm.

8. A flip-chip bonding structure, characterized in that: The invention comprises a gold bump made by the method for making a gold bump by thermosonic spherical gold wire bonding as described in any one of claims 1 to 7.

9. A chip, characterized in that: Comprising the flip-chip bonding structure as claimed in claim 8.

10. A processor, characterized in that: Comprising the chip as claimed in claim 9.

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