Diode structure

By setting filling trenches and epitaxial layers in the SiC diode structure, and combining ohmic contacts and Schottky contacts, the current and electric field distribution is optimized, solving the problem of insufficient high voltage withstand capability of SiC diodes, improving the performance and reliability of the devices, and simplifying the process flow.

CN119967824BActive Publication Date: 2026-04-03ZHUHAI GREE ELECTRONIC COMPONENTS CO LTD +1
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Patent Information

Application Number
CN202510111593.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-01-23
Publication Date
2026-04-03
Estimated Expiration
2045-01-23

AI Technical Summary

Technical Problem

Existing SiC diode device structures are not optimized for the characteristics of SiC material, resulting in low high voltage withstand capability, complex manufacturing process, and no obvious performance advantages.

Method used

Multiple filling grooves are set on the substrate, and an epitaxial filling layer is set in the filling groove. The first metal layer forms an ohmic contact with the epitaxial filling layer, and the second metal layer forms a Schottky contact with the substrate. By combining the design of epitaxial layers with different doping concentrations, the current distribution and electric field distribution are optimized.

Benefits of technology

It significantly improves the voltage withstand capability and reliability of the device, reduces on-resistance, optimizes reverse recovery characteristics, enhances resistance to sudden surge current, simplifies the manufacturing process, and reduces production costs.

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Abstract

This invention provides a diode structure, comprising: a substrate; multiple filling trenches disposed on the substrate, extending along the length or width direction of the substrate and spaced apart along the length or width direction of the substrate; an epitaxial filling layer disposed within each filling trench; a first metal layer connected to at least one epitaxial filling layer within the multiple filling trenches to form a first ohmic contact; and a second metal layer disposed on the substrate and forming a Schottky contact with the substrate. This application solves the problem of low high-voltage withstand capability in existing SiC diodes.
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