Film plating method of multi-arc ion plating equipment and arc source device of multi-arc ion plating equipment

Abstract

The invention discloses a coating method of multi-arc ion plating equipment and an arc source device of the multi-arc ion plating equipment, and relates to the technical field of coating, the multi-arc ion plating equipment comprises a vacuum cavity, and a rotatable sample table and vertically arranged arc source units are arranged in the vacuum cavity; the arc source unit comprises a cathode target material, an arc striking assembly and a dynamic magnetic field adjusting module. The cathode target materials are vertically arranged, and the included angle between the centers of the adjacent target materials is 30-45 degrees; the dynamic magnetic field adjusting module comprises a permanent magnet and an electromagnetic coil set, the magnetic field intensity (0-500 Gs) and the direction are adjusted in real time through a PLC, and the movement speed (10-50 cm / s) of an arc light spot is controlled. According to the invention, a coordinated control system integrates linkage adjustment functions of arc current (50-200 A), gas flow (Ar: 50-200 sccm, N2: 100-1000 sccm) and substrate bias voltage (-50--500 V), compared with annular staggered arrangement equipment, the occupied space is smaller, 3-4 groups of arc sources can be arranged, and the coating efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of film coating, in particular to a film coating method of multi-arc ion plating equipment and an arc source device thereof. Background Art

[0002] Multi-arc ion plating technology has been widely used in the preparation of super-hard coatings in the fields of tools, molds, aerospace parts, etc., such as the deposition of hard films such as TiN, CrN, and TiAlN, due to its advantages such as high ionization rate (60%~80%), fast deposition rate, and strong bonding between coating and substrate.

[0003] However, the existing multi-arc ion plating equipment still has the following technical defects in practical applications: Unreasonable arc source layout: Traditional equipment mostly uses a planar array or single-ring arrangement of cathode target structures, resulting in a film thickness difference of more than 10% between the edge and center of the coating area, making it difficult to meet the uniform coating requirements for large or complex-shaped workpieces; Single magnetic field control: Existing devices mostly use a fixed magnetic field or simple electromagnetic adjustment, which cannot dynamically adjust the magnetic field parameters according to the arc characteristics of different target materials (such as Ti, Cr, and Zr). This can easily lead to problems such as uneven arc spot distribution and droplet splashing, affecting the coating purity and surface quality; Poor coordination of process parameters: key parameters such as arc current, gas flow, and substrate bias are mostly adjusted independently, lacking a linkage control mechanism, making it difficult to match the dynamic requirements of the coating growth process, resulting in low target material utilization (usually only around 40%), insufficient coating density and other problems. Therefore, the development of a multi-arc ion plating equipment and a coating method that can achieve uniform distribution of arc spots and coordinated regulation of multiple parameters is of great significance to improving coating quality and production efficiency. Summary of the Invention

[0004] The object of the present invention is to provide a coating method and arc source device of a multi-arc ion plating device to solve the problems raised in the above background technology.

[0005] In order to solve the above technical problems, the present invention provides the following technical solutions: a coating method of a multi-arc ion plating device and an arc source device thereof, comprising a vacuum chamber, wherein a rotatable sample stage and vertically arranged arc source units are provided inside the vacuum chamber; The arc source unit includes cathode targets, arc starting components, and a dynamic magnetic field adjustment module. The cathode targets are arranged vertically, with the center angle between adjacent targets being 30° to 45°. The dynamic magnetic field regulation module includes a permanent magnet and an electromagnetic coil assembly. The PLC controller adjusts the magnetic field intensity (0-500 Gs) and direction in real time, controlling the arc spot movement speed (10-50 cm / s). The collaborative control system integrates the linkage adjustment functions of arc current (50~200 A), gas flow (Ar: 50~200 sccm, N2: 100~1000 sccm) and substrate bias (-50~-500 V).

[0006] According to the above technical solution, the arc striking assembly adopts a pneumatically driven multi-needle linkage structure. The distance between the arc striking needle and the target can be adjusted by a precision guide rail, and each arc source unit is equipped with a cylinder. A heater and an ion source are arranged in the vacuum chamber, and the heater and the ion source are arranged vertically on the inner wall of the vacuum chamber; The vacuum chamber is connected to a power supply, which is a bias power supply. The bias power supply applies a negative voltage relative to the chamber to the workpiece holder, so that during the coating process, ions are accelerated under the action of the bias voltage to bombard the workpiece surface and deposit to form a thin film. The power supply provides energy for the operation of the vacuum chamber. A turntable motor is provided at the bottom of the vacuum chamber, and the turntable motor is connected to the rotatable sample stage through a gear, so that the rotatable sample stage rotates; A molecular pump is set on the top of the vacuum chamber, the molecular pump is connected to a Roots pump, and the Roots pump is connected to a rotary vane pump; A first valve is provided between the Roots pump and the vacuum chamber, and a second valve is provided between the molecular pump and the Roots pump; The molecular pump is connected to the control valve.

[0007] According to the above technical solution, in the pre-treatment stage: the vacuum chamber is evacuated to a background vacuum of ≤5×10 -3 Pa, introduce argon gas to the working pressure of 0.1-1 Pa, apply -200~-1000 V bias for ion bombardment cleaning, time 5~15 min; Deposition stage: The process parameters are controlled in three stages: Initial stage (0-5 min): arc current 80-120 A, substrate bias -300-400 V, nitrogen flow rate 100-150 sccm; Mid-term (5-30 min): arc current 150-180 A, substrate bias -150-250 V, nitrogen flow rate 200-250 sccm, dynamic magnetic field strength linearly increased to 300-400 Gs; Final stage (30-45 min): arc current 120-150 A, substrate bias -50-100 V, nitrogen flow rate 150-200 sccm, magnetic field strength reduced to 100-200 Gs; Post-processing stage: turn off the arc source unit, introduce inert gas and cool to the substrate temperature ≤ 180℃ before breaking the vacuum.

[0008] According to the above technical solution, the dynamic magnetic field regulation module collects the arc voltage fluctuation signal in real time during the deposition stage (sampling frequency 1 kHz) and adjusts the electromagnetic coil current through the PID algorithm to ensure that the arc spot distribution uniformity is ≥90%.

[0009] According to the above technical solution, a spiral cooling water channel is provided inside the cathode target material, and combined with a copper cooling body, the target surface temperature is controlled at <200°C.

[0010] According to the above technical solution, the arc source unit of the annular array includes 6 to 12 cathode targets, which are staggered along the circumference of the vacuum chamber 1, and the axial height difference between adjacent targets is 200-350 mm.

[0011] According to the above technical solution, the ion bombardment cleaning time in the pretreatment stage is 5~15 min, and the background vacuum is ≤5×10 -3 Pa.

[0012] According to the above technical solution, the collaborative control system connects the arc power supply, mass flow meter and bias power supply through the industrial bus to achieve parameter coupling and linkage.

[0013] According to the above technical solution, the dynamic magnetic field strength in the middle of the deposition stage is 300~400 Gs, and drops to 100~200 Gs at the end.

[0014] According to the above technical solution, the magnetic field intensity adjustment range of the dynamic magnetic field adjustment module is 0~500 Gs, and the arc spot movement speed control range is 10~50 cm / s.

[0015] Compared with the prior art, the present invention has the following beneficial effects: the present invention occupies less space and improves the coating efficiency by providing arc source units with a vertical arrangement design compared to annular staggered arrangement equipment; The present invention forms a synergistic effect of "near-field enhancement + far-field extension" by setting an arc source double-coil alternating magnetic field, thereby achieving global optimization of the plasma, suppressing arc spot instability and reducing chamber contamination. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings: Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 This is the surface morphology of the CrAlN coating deposited by arc source single magnetic field; Figure 3 The surface morphology of the CrAlN coating deposited by the arc source dynamic alternating magnetic field of the present invention is shown; In the figure: 1. Vacuum chamber; 2. Rotatable sample stage; 3. Arc source unit; 4. Cathode target; 5. Permanent magnet; 6. Electromagnetic coil assembly; 7. Heater; 8. Ion source; 9. Power supply; 10. Turntable motor; 11. Gear; 12. Molecular pump; 13. Roots pump; 14. Rotary vane pump; 15. Control valve. DETAILED DESCRIPTION

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0018] See also Figure 1-3 The present invention provides a technical solution: a coating method of a multi-arc ion plating device and an arc source device thereof, comprising a vacuum chamber 1, which serves as the anode body and is provided with a water-cooling structure inside to prevent the anode from overheating during the coating process and reduce the generation of large droplets during the coating process. A rotatable sample stage 2 and vertically arranged arc source units 3 are provided inside the vacuum chamber 1, wherein a row of arc source units 3 constitutes a group, and one device can be provided with 3-4 groups of arc sources. Compared with a device with a circular staggered arrangement, this vertical arrangement of arc source units occupies less space and has a larger number of arc source groups; The arc source unit 3 includes a cathode target 4, an arc starting assembly, and a dynamic magnetic field adjustment module. The cathode targets 4 are arranged vertically, with the center angle between adjacent targets being 30° to 45°. The dynamic magnetic field regulation module includes a permanent magnet 5 and an electromagnetic coil group 6. The PLC controller adjusts the magnetic field strength (0-500 Gs) and direction in real time to control the arc spot movement speed (10-50 cm / s). This device is equipped with two coils, one for the rear coil and the other for the front coil. The rear coil is driven by a motor and is used to adjust the gap between the coil and the target.

[0019] The front coil uses a low-frequency current of 10~50 Hz to generate a wide-area axial magnetic field, covering the edge area of ​​the target material and promoting uniform diffusion of the plasma.

[0020] The rear coil uses a high-frequency current of 100~500 Hz to focus the central magnetic field and suppress the initial spread of the arc.

[0021] The coil current amplitude is linked to the sputtering power. For example, when the arc current increases, the rear coil current increases accordingly, introducing a phase difference of 5°~15° (the rear coil phase lags behind the front coil), weakening the magnetic field superposition effect in the central area and avoiding excessive etching of the target center.

[0022] By monitoring the high-frequency (GHz-level) current waveform of the arc source, analyzing the number of droplets generated, and adjusting the dual-coil parameters in a closed loop to reduce the number of droplets, the core control logic is that arc instability events (such as micro-explosions and spattering) will cause high-frequency disturbances in the current waveform; and the dual-coil magnetic field can suppress such instability events by constraining arc motion, thereby reducing droplet generation.

[0023] Step 1: High-frequency current waveform acquisition Sensor selection: A Rogowski coil is selected as the current probe, which has a bandwidth of 1 to 10 GHz, a sensitivity of 10 mV / A, and a response time of less than 1 ns.

[0024] Sampling parameters: sampling rate ≥ 20 GS / s (to ensure the capture of transient events above 1 GHz), synchronous trigger signal and arc source power supply synchronization (to avoid phase error).

[0025] Step 2: Droplet Number Estimation (Feature Extraction) Time domain analysis: Set a current baseline value (e.g., 100 A) and extract spikes that exceed 50% of the baseline value (i.e., >150 A).

[0026] Frequency domain analysis: Perform fast Fourier transform (FFT) on the current waveform and calculate the power spectral density (PSD) in the 3-5 GHz frequency band. The PSD peak corresponds to the intensity of the arc micro-explosion.

[0027] Droplet counting: Count the number of spikes within a unit of time (e.g., 1 second). This number is used as an estimate of the number of droplets (experimental calibration: 1 spike ≈ 1 droplet).

[0028] Step 3: Closed-loop regulation strategy Target setting: Set the droplet number threshold N0 (for example, 10 droplets / second, corresponding to a coating defect rate of <2%).

[0029] Deviation calculation: Calculate the deviation ΔN = N - N0 between the real-time droplet number N and the target threshold N0.

[0030] Parameter adjustment (PID control): Current regulation: When ΔN>0 (too many droplets), increase the front coil current (regulation amount ΔI1 = Kp·ΔN +Ki·∫ΔN dt).

[0031] Frequency adjustment: If the high-frequency peak energy is concentrated in a specific frequency band (such as 4 GHz), the rear coil frequency is adjusted to the multiple of this frequency band (such as 8 GHz) to use the resonance effect to suppress arc oscillation.

[0032] Phase difference adjustment: When ΔN is continuously greater than 0, increase the phase difference between the two coils (adjustment amount Δφ = Δφ_max - Kd·d(ΔN) / dt) to disperse the arc energy.

[0033] Step 4: Effect verification and dynamic optimization Real-time feedback: Monitor the change in droplet number after adjustment (for example, check whether N drops to within the range of N0±2).

[0034] Adaptive correction: If the number of droplets does not meet the standard after adjustment, the PID parameters are updated (for example, the proportional coefficient Kp is increased to speed up the response) or the mode is switched to pulse modulation (short pulse current is superimposed to suppress micro-explosions).

[0035] Application examples: During production, it was found that there were a large number of droplet defects on the coating surface (surface roughness Ra>50 nm), and the measured number of droplets was about 20 / second (target value N0=10 / second).

[0036] Control process: Signal acquisition: A high-frequency current probe (bandwidth 1-10 GHz) was used to collect the arc source current waveform. A significant peak (amplitude > 200 A, frequency 2-3 GHz) was found in the 3-5 GHz frequency band. This feature is related to droplet formation.

[0037] Feature extraction: The number of spikes within 1 second is 20 (N=20>N0=10). PSD analysis shows that the power in the 3.5 GHz band is the highest (corresponding to the main frequency of the arc microexplosion).

[0038] Parameter adjustment: The front coil current was increased from 2 A to 2.4 A (ΔI1=+0.4 A, Kp=2) to enhance magnetic field confinement; The rear coil frequency was adjusted from 100 Hz to 200 Hz (to suppress arc oscillations through resonance); The phase difference between the two coils is increased from 0° to 12° (Δφ=12°) to disperse the arc energy.

[0039] Effect verification: After adjustment, the number of spikes within 1 second dropped to 8 (N=8<N0=10), the coating surface roughness Ra dropped from 50nm to 18nm, and the defect rate was <1%.

[0040] Dynamic optimization: Continuous monitoring shows that the number of droplets is stable in the range of 8-10 per second. PID parameters are adjusted accordingly (Kp=1.5, Ki=0.1) to maintain stable control effect.

[0041] The arc striking assembly adopts a pneumatically driven multi-needle linkage structure. The distance between the arc striking needle and the target can be adjusted by a precision guide rail, and each arc source unit 3 is equipped with a cylinder; A heater 7 and an ion source 8 are arranged in the vacuum chamber 1, and the heater 7 and the ion source 8 are arranged vertically on the inner wall of the vacuum chamber 1; The vacuum chamber 1 is connected to a power supply 9, which is a bias power supply. The bias power supply applies a negative voltage relative to the chamber to the workpiece holder, so that during the coating process, ions are accelerated under the action of the bias voltage to bombard the workpiece surface and deposit to form a thin film. The power supply 9 provides energy for the operation of the vacuum chamber 1. A turret motor 10 is provided at the bottom of the vacuum chamber 1 , and the turret motor 10 is connected to the rotatable sample stage 2 via a gear 11 , so that the rotatable sample stage 2 rotates; A molecular pump 12 is provided on the top of the vacuum chamber 1, the molecular pump 12 is connected to a Roots pump 13, and the Roots pump 13 is connected to a rotary vane pump 14; A first valve is provided between the Roots pump 13 and the vacuum chamber 1 , and a second valve is provided between the molecular pump 12 and the Roots pump 13 ; The molecular pump 12 is connected to the control valve 15 .

[0042] The coating process is divided into pre-treatment stage, deposition stage and post-treatment stage. The pre-treatment stage is to evacuate the vacuum chamber 1 to a background vacuum degree of ≤5×10 -3 Pa, then introduce argon gas to the working pressure of 0.1-1Pa, then apply -200~-1000 V bias for ion bombardment cleaning, the time is 5~15 min, and then enter the deposition stage. The deposition stage is divided into three stages to control the process parameters, namely the initial stage, the middle stage and the final stage. The initial coating time value is set to a1, the arc current value is b1, the substrate bias value is c1, and the nitrogen flow rate value is d1; Preprocessing stage Vacuum pumping: Start the rotary vane pump 14 → open the first valve → start the roots pump 13 → open the second valve → start the molecular pump 12, and pump the vacuum chamber 1 to a background vacuum degree of ≤5×10 -3 Pa.

[0043] Ion bombardment cleaning: introduce argon gas to a working pressure of 0.1-1 Pa, apply substrate bias (-200~-1000 V), start heater 7, and perform ion bombardment cleaning on the sample for 5~15 minutes to remove surface contaminants (claims 3 and 7).

[0044] The value range of a1 is 0~5 min, the value range of b1 is 80~120 A, the value range of c1 is -300~-400 V, and the value range of d1 is 100~150 sccm; Set the mid-term coating duration to a2, the arc current to b2, the substrate bias to c2, the nitrogen flow rate to d2, and the dynamic magnetic field strength to e2; The value range of a2 is 5~30 min, the value range of b2 is 150~180 A, the value range of c2 is -150~-250 V, the value range of d2 is 200~250 sccm, and the value range of e2 is 300~400 Gs; Set the final coating duration to a3, the arc current to b3, the substrate bias to c3, the nitrogen flow rate to d3, and the dynamic magnetic field strength to e3; The value range of a3 is 30~45 min, the value range of b3 is 120~150 A, the value range of c3 is -50~-100 V, the value range of d3 is 150~200 sccm, and the value range of e3 is 100~200 Gs.

[0045] The dynamic magnetic field regulation module collects arc voltage fluctuation signals in real time during the deposition stage (sampling frequency 1 kHz) and adjusts the electromagnetic coil current through the PID algorithm to ensure that the arc spot distribution uniformity is ≥90%.

[0046] A spiral cooling water channel is provided inside the cathode target 4, which, combined with a copper cooling body, controls the target surface temperature to be less than 200°C.

[0047] The arc source unit 3 of the annular array includes 6 to 12 cathode targets 4, which are staggered and distributed along the circumference of the vacuum chamber 1, and the axial height difference between adjacent targets is 200-350 mm.

[0048] The ion bombardment cleaning time in the pretreatment stage is 5-15 min, and the background vacuum is ≤5×10 -1 Pa.

[0049] The control system is connected to the arc power supply, mass flow meter and bias power supply through the industrial bus to achieve parameter coupling and linkage.

[0050] The arc power supply, mass flow meter, and bias power supply are connected via an industrial bus to achieve parameter coupling and linkage. The arc source protection mechanism is also integrated, specifically including: Current limiting protection: A power resistor (resistance ranges from a few ohms to tens of ohms, matched according to the model of the arc source unit 3) is set between the anode and the vacuum chamber 1 to limit the loop current and avoid overload; Voltage monitoring protection: Real-time monitoring of the potential difference between the anode, vacuum chamber 1 and cathode target 4. When the voltage change reaches the preset warning value, the power supply of the arc source unit 3 is immediately cut off to prevent the arc source from burning out due to abnormal discharge.

[0051] System safety protection: The dual protection mechanism of power resistor current limiting and voltage monitoring effectively prevents arc source unit 3 from being damaged by excessive current or abnormal potential, thereby improving equipment operation safety and service life.

[0052] The magnetic field intensity adjustment range of the dynamic magnetic field adjustment module is 0~500 Gs, and the arc spot movement speed control range is 10~50 cm / s.

[0053] Deposition stage (controlled in three stages): Initial stage (0-5 min): Start the arc starting assembly of arc source unit 3, ignite the arc, set the arc current to 80-120 A, the substrate bias voltage to -300-400 V, and the nitrogen flow rate to 100-150 sccm; start the initial magnetic field strength of the dynamic magnetic field adjustment module to control the movement of the arc spot.

[0054] Mid-term (5-30 min): The arc current is increased to 150-180 A, the substrate bias voltage is adjusted to -150-250 V, and the nitrogen flow rate is increased to 200-250 sccm. The dynamic magnetic field intensity is linearly increased to 300-400 Gs, and the electromagnetic coil current is adjusted in real time using the PID algorithm to ensure that the arc spot distribution uniformity is ≥90%.

[0055] Final stage (30-45 min): The arc current is reduced to 120-150 A, the substrate bias is adjusted to -50-100 V, the nitrogen flow rate is reduced to 150-200 sccm, and the magnetic field strength is reduced to 100-200 Gs to complete the film growth.

[0056] Post-processing stage: turn off the arc source unit 3 to stop the arc generation; introduce inert gas, cool naturally through the water cooling structure and cavity, break the vacuum after the substrate temperature is ≤180°C, and take out the sample.

[0057] Efficient space utilization: The arc source unit 3 adopts a vertical arrangement design, which occupies less space than the circular staggered arrangement equipment. 3-4 groups of arc sources can be set up to improve the coating efficiency.

[0058] Film quality optimization: The dynamic magnetic field adjustment module (permanent magnet 5 + electromagnetic coil group 6) controls the magnetic field parameters in real time through PLC. Combined with the PID algorithm, it ensures that the arc spot distribution uniformity is ≥90%, reducing film defects. Figure 2 Schematic diagram of the surface morphology of CrAlN coating deposited by arc source single magnetic field. Figure 3 The surface morphology of the CrAlN coating deposited by the arc source dynamic alternating magnetic field of the present invention is shown. Through comparative analysis, it can be clearly observed that under the dynamic alternating magnetic field deposition conditions, the number of droplet particles on the coating surface is significantly reduced, and the coating structure presents higher density and uniformity; that is, when the coil is kept inactive during the coating deposition process, the surface morphology of the deposited CrAlN coating is expected to be the same as that of the CrAlN coating. Figure 2 The results are exactly the same as shown, which intuitively highlights the optimization effect of dynamic alternating magnetic field technology.

[0059] Arc current, gas flow and bias voltage are controlled in three stages to optimize film density and adhesion.

[0060] Target and equipment protection: The spiral cooling water channel inside the cathode target 4 is combined with a copper cooler to control the target surface temperature to less than 200°C, extending the target life; the water-cooling structure of the vacuum chamber 1 prevents anode overheating and the generation of large droplets.

[0061] Process stability: The rotatable sample stage 2 ensures uniform coating of the sample; the multi-stage vacuum pump system (molecular pump + Roots pump + rotary vane pump) quickly establishes and maintains a high vacuum environment to ensure the stability of the coating process.

[0062] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0063] Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art will be able to modify the technical solutions described in the aforementioned embodiments or substitute equivalents for some of the technical features. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A multi-arc ion plating device, characterized in that: include: A vacuum chamber (1) is provided with a rotatable sample stage (2) and a vertically arranged arc source unit (3); The arc source unit (3) comprises a cathode target (4), an arc starting assembly and a dynamic magnetic field adjustment module. The cathode targets (4) are arranged vertically, and the angle between the centers of adjacent targets is 30° to 45°; The dynamic magnetic field adjustment module includes a permanent magnet (5) and an electromagnetic coil group (6), and adjusts the magnetic field intensity (0-500 Gs) and direction in real time through a PLC controller to control the arc spot movement speed (10-50 cm / s); The collaborative control system integrates the linkage adjustment functions of arc current (50~200 A), gas flow (Ar: 50~200 sccm, N2: 100~1000 sccm) and substrate bias (-50~-500 V).

2. The multi-arc ion plating equipment according to claim 1, characterized in that: The arc striking assembly adopts a pneumatically driven multi-needle linkage structure, the distance between the arc striking needle and the target material can be adjusted by a precision guide rail, and each arc source unit (3) is equipped with a cylinder; A heater (7) and an ion source (8) are arranged in the vacuum chamber (1), and the heater (7) and the ion source (8) are arranged vertically on the inner wall of the vacuum chamber (1); The vacuum chamber (1) is connected to a power supply (9), which is a bias power supply. The bias power supply is used to apply a negative voltage relative to the chamber to the workpiece holder, so that during the coating process, ions are accelerated under the action of the bias voltage to bombard the workpiece surface and deposit to form a thin film. The power supply (9) provides energy for the operation of the vacuum chamber (1); A turntable motor (10) is provided at the bottom of the vacuum chamber (1), and the turntable motor (10) is connected to the rotatable sample stage (2) via a gear (11), so that the rotatable sample stage (2) rotates; A molecular pump (12) is provided on the top of the vacuum chamber (1), the molecular pump (12) is connected to a Roots pump (13), and the Roots pump (13) is connected to a rotary vane pump (14); A first valve is provided between the Roots pump (13) and the vacuum chamber (1), and a second valve is provided between the molecular pump (12) and the Roots pump (13); The molecular pump (12) is connected to a control valve (15).

3. A coating method based on the device according to claim 1, characterized in that: The following steps are involved: Pretreatment stage: evacuate the vacuum chamber (1) to a background vacuum of ≤5×10 -3 Pa, introduce argon gas to the working pressure of 0.1-1 Pa, apply -200~-1000 V bias for ion bombardment cleaning, time 5~15 min; Deposition stage: The process parameters are controlled in three stages: Initial stage (0-5 min): arc current 80-120 A, substrate bias -300-400 V, nitrogen flow rate 100-150 sccm; Mid-term (5-30 min): arc current 150-180 A, substrate bias -150-250 V, nitrogen flow rate 200-250 sccm, dynamic magnetic field strength linearly increased to 300-400 Gs; Final stage (30-45 min): arc current 120-150 A, substrate bias -50-100 V, nitrogen flow rate 150-200 sccm, magnetic field strength reduced to 100-200 Gs; Post-processing stage: the arc source unit (3) is turned off, an inert gas is introduced to cool the substrate to a temperature of ≤180°C, and then the vacuum is broken.

4. The method according to claim 3, characterized in that This device is equipped with two coils: a rear coil and a front coil. The rear coil is driven by a motor and is used to adjust the gap between the coil and the target. By monitoring the high-frequency current waveform of the arc source and analyzing the number of droplets generated, the dual coil parameters are adjusted in a closed-loop manner to reduce the number of droplets.

5. The device according to claim 1, characterized in that The cathode target material (4) is provided with a spiral cooling water channel inside, and combined with a copper cooling body, the target surface temperature is controlled to be less than 200°C.

6. The device according to claim 1, characterized in that The annular array arc source unit (3) comprises 6 to 12 cathode targets (4), which are staggered and distributed along the circumference of the vacuum chamber 1, and the axial height difference between adjacent targets is 200 to 350 mm.

7. The method according to claim 3, characterized in that The ion bombardment cleaning time in the pretreatment stage is 5 to 15 minutes, and the background vacuum is ≤5×10 -3 Pa.

8. The device according to claim 1, characterized in that The collaborative control system connects the arc power supply, mass flow meter and bias power supply through an industrial bus to achieve parameter coupling and linkage.

9. The method according to claim 3, characterized in that The dynamic magnetic field strength in the middle of the deposition stage is 300-400 Gs and drops to 100-200 Gs in the final stage.

10. The device according to claim 1, characterized in that The magnetic field intensity adjustment range of the dynamic magnetic field adjustment module is 0~500 Gs, and the arc spot movement speed control range is 10~50 cm / s.

Images