Implementation method of high-reliability HBM bonding process

By using integrated modeling logic, precise pretreatment of HBM bonding surfaces, high-precision bonding of heterogeneous wafers, and dynamic stress control after bonding are achieved. This solves the problems of micro-defects, alignment accuracy, and stress stability in the HBM bonding process, improves the cleanliness of bonding surfaces, alignment accuracy, and interface bonding strength, and meets high reliability requirements.

CN122288341APending Publication Date: 2026-06-26TIANJIN SAIWEI IND TECH CO LTD
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Patent Information

Application Number
CN202610350437.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-20
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

Existing HBM bonding processes face challenges in controlling micro-defects on the bonding surface, ensuring alignment accuracy of heterogeneous wafers, and maintaining stress stability at the bonding interface, thus failing to meet high reliability requirements. In particular, there are gaps in micro/nano-level defect detection and repair, submicron-level alignment compensation, and dynamic stress control.

Method used

An integrated modeling logic is constructed, including a precise preprocessing module for bonding surfaces, a high-precision bonding module for heterogeneous wafers, and a dynamic stress control module after bonding. These modules achieve high-precision and high-reliability HBM bonding through precise detection and repair of micro-defects, submicron-level alignment and deviation compensation, and dynamic stress calculation and compensation.

Benefits of technology

It significantly improves the cleanliness and uniformity of the bonding surface, enhances the alignment accuracy of heterogeneous wafers, strengthens the bonding strength and long-term reliability of the bonding interface, and solves the problems of micro-defects, low alignment accuracy and stress failure in the existing technology, thus meeting the requirements of high-reliability HBM products.

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Abstract

The invention belongs to the technical field of communication automation, and discloses a high-reliability HBM bonding process implementation method. According to the method, three core modules of precise pretreatment of a bonding surface, high-precision bonding of heterogeneous wafers and dynamic regulation and control of stress after bonding are constructed, and the whole process of HBM bonding from wafer pretreatment, precise bonding to post-treatment stress regulation and control is covered. The industrial bottlenecks of difficult control of bonding surface defects, low alignment precision and easy failure of interface stress of the traditional HBM bonding process are broken through by adopting the core of precise detection and repair of bonding surface microdefects, heterogeneous wafer submicron alignment, dynamic measurement and compensation of bonding interface stress and the like; the high-cleanliness pretreatment of the HBM bonding surface, the submicron precise bonding of the heterogeneous wafer and the dynamic adaptive regulation and control of the interface stress after bonding are realized, the HBM bonding yield, the interface bonding strength and the long-term working reliability are remarkably improved, and the advanced packaging requirements of a new generation of high-bandwidth storage chips are met.
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