Analog memories utilizing ferroelectric capacitors
a technology of ferroelectric capacitors and analog memories, applied in the field of analog memories utilizing ferroelectric capacitors, can solve the problems of memory that can withstand significant mechanical shocks, requires a fraction of the power of conventional disk drives, and costs such memories
Active Publication Date: 2012-07-31
RADIANT TECH
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Problems solved by technology
In addition, these memories can withstand significant mechanical shocks and require a fraction of the power of conventional disk drives.
The cost of such memories, however, still places limitations on the use of the drives.
In addition, such memories are not useable in high radiation environments.
Unfortunately, the time to write such a cell is significantly greater than the time to write a binary cell.
Furthermore, the maximum number of states that can be stored in a memory cell is limited.
However, this approach increases the cost of the memory and still imposes an initial read time for a “track” that is longer than the read times for reading out individual segments of the track once the track has been loaded.
This “garbage collection” procedure further complicates the memories and increases the cost.
Finally, the number of times a cell can be erased and rewritten is limited, and hence, the lifetime of the memory can be a problem in applications that require a large number of cells to be erased and rewritten a large number of times.
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[0022]Refer now to FIG. 1, which illustrates a typical ferroelectric capacitor. For the purposes of this discussion, a ferroelectric capacitor is defined to be a capacitor having a ferroelectric dielectric material such as lead zirconate titanate (PZT) sandwiched between first and second electrodes in which the dielectric material exhibits a remanent polarization when a potential is applied across the electrodes and then removed. The simplest form of capacitor is a parallel plate capacitor having electrodes 21 and 22 in which a dielectric layer 23 includes a ferroelectric material such as PZT. To simplify the following discussion, a ferroelectric capacitor having a single pair of parallel plates that sandwich the dielectric will be used in the examples. However, other geometries are possible. For example, a capacitor having interdigitated electrodes (interlaced fingers) with a dielectric between each pair of electrodes could also be utilized.
[0023]The dielectric layer can be polariz...
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A ferroelectric memory having a plurality of ferroelectric memory cells, each ferroelectric memory cell including a ferroelectric capacitor is disclosed. The ferroelectric memory includes read and write lines and a plurality of ferroelectric memory cell select buses, one select bus corresponding to each of the ferroelectric memory cells. Each of the ferroelectric memory cells includes first and second gates for connecting the ferroelectric memory cell to the read line and the write line, respectively, in response to signals on the ferroelectric memory cell select bus corresponding to that ferroelectric memory cell. A write circuit causes a charge to be stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the write line, the charge having a value determined by a data value having at least three states. A read circuit measures the charge stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the read line to generate an output value, the output value corresponding to one of the states.
Description
BACKGROUND OF THE INVENTION[0001]Non-volatile solid-state EEPROM memories have become competitive with conventional rotating magnetic disk media for large-scale data storage in applications requiring high speed and / or low power consumption. Such memories have much shorter effective “seek” times and data transfer rates that are as fast or faster than the conventional disk drives. In addition, these memories can withstand significant mechanical shocks and require a fraction of the power of conventional disk drives. The cost of such memories, however, still places limitations on the use of the drives. In addition, such memories are not useable in high radiation environments.[0002]One method for reducing the cost of such memories utilizes memory cells that have more than two storage states. For example, in EEPROM memories, a charge is deposited on a floating gate using tunneling. The charge alters the conductivity of the associated transistor. In a binary memory, the presence or absence...
Claims
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IPC IPC(8): G11C11/22
InventorEVANS, JR., JOSEPH T.WARD, CALVIN B.
OwnerRADIANT TECH