Semiconductor-type wind speed sensor including through-hole having inclined side surface, and method for manufacturing same

Abstract

The present invention relates to a semiconductor-type wind speed sensor comprising: a substrate which includes a through-hole having an inclined side surface; a pair of electrodes which are formed on the substrate; and a metal wire which electrically connects the pair of electrodes to each other, wherein the through-hole is formed between the pair of electrodes.

Description

Semiconductor wind speed sensor including a through hole with an inclined side and a manufacturing method thereof

[0001] The present invention relates to a semiconductor wind speed sensor including a through hole having an inclined side surface and a method for manufacturing the same.

[0002] Wind speed plays a significant role in our daily lives. However, in developed industrial societies, the impact of wind speed and wind power on work processes is increasing, and as industries advance, the need for more accurate measurements increases. Generally, a wind speed sensor refers to a device that detects wind speed, calculates it, and then displays it numerically for easy reading.

[0003] Among this type of sensor, the hot-wire type is widely known. This type of flow sensor heats a metal wire with a diameter of several micrometers, and when the temperature of the metal wire changes due to the cooling effect caused by the flow, the flow rate is measured based on the change in electrical resistance of the metal wire caused by the temperature change.

[0004] For example, when the flow rate is high, the cooling effect increases, thus increasing the electrical resistance value. Therefore, it is believed that it is possible to measure the flow rate by monitoring changes in the electrical resistance value.

[0005] In addition, it is known that a more sensitive hot wire type flow sensor detects the change in temperature distribution of a heat body generated by a metal wire when the temperature distribution changes due to the flow velocity using temperature sensor wires disposed on both sides of the metal wire, and measures the flow velocity based on the difference in the electrical resistance values ​​of the two temperature sensor wires.

[0006] These hot-wire wind speed sensors are used in many fields because they are easy to convert to electricity and process signals. However, hot-wire wind speed sensors are greatly affected by the surrounding temperature and humidity, which causes disadvantages such as errors in the measured values.

[0007] In this way, the frequency of errors in wind speed sensors is high in summer and winter, which is actually reducing product productivity. In particular, hot-wire temperature and wind speed sensors have the disadvantage of being greatly affected by the surrounding temperature and humidity, so the occurrence rate of defective products is high, resulting in a 'lower productivity'. Therefore, material and structural supplementation have been necessary.

[0008] Therefore, research on the stable operation of temperature and wind speed sensors and an anemometer compatible with them has been conducted from early on, and as a result, a semiconductor wind speed sensor was developed.

[0009] The background technology described above is technology that the inventor possessed or acquired in the process of deriving the disclosure of the present application, and cannot necessarily be said to be publicly known technology disclosed to the general public prior to the present application.

[0010] The present invention aims to solve the above-described problem by providing a semiconductor wind speed sensor including a through hole having an inclined side surface and a method for manufacturing the same.

[0011] Specifically, according to the present invention, it is intended to provide a semiconductor wind speed sensor and a manufacturing method thereof with improved productivity due to a simple process and simple structure.

[0012] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by a person having ordinary skill in the relevant technical field from the description below.

[0013] The semiconductor wind speed sensor of the present invention comprises: a substrate including a through hole having an inclined side surface; a pair of electrodes formed on the substrate; and a metal wire electrically connecting the pair of electrodes; wherein the through hole is formed between the pair of electrodes.

[0014] In one embodiment, the through hole may have an area that narrows in the direction in which the air flow passes, and the air flow passing through the through hole may be amplified.

[0015] According to one embodiment, the inclined side may be symmetrical, with a central plane of symmetry being perpendicular to the metal wire, and when the inclined side is viewed from the metal wire, the inclined side may extend radially from the central plane of symmetry to form an acute angle.

[0016] In one embodiment, the acute angle may be from 10° to 70°.

[0017] In one embodiment, the substrate may include at least one selected from the group consisting of silicon (Si), germanium (Ge), selenium (Se), gallium arsenide (GaAs), gallium arsenide phosphide (GaAsP), gallium nitride (GaN), silicon carbide (SiC), zinc sulfide (ZnS), silicon dioxide (SiO2), polyimide (PI), polyetherimide (PEI), polycarbonate (PC), polyester (PES), polystyrene (PS), polyolefin (PO), polysulfone (PSF), polyarylate (PAR), polyvinyl chloride (PVC), and cellulose ester.

[0018] According to one embodiment, the substrate further includes an insulating film formed on the substrate, and the insulating film may include at least one selected from the group consisting of an oxide film, a nitride film, an oxynitride film, an oxynitride film, a phosphosilicate-glass (PSG) film, and a boron-doped phosphosilicate-glass (BPSG) film.

[0019] According to one embodiment, the substrate further includes a mesh material and may have a thickness of 50 μm to 5000 μm.

[0020] In one embodiment, the temperature of the metal wire may be controlled by flowing a current through the metal wire.

[0021] According to one embodiment, the wind speed may be calculated from a change in the resistance value of the metal wire according to a change in the temperature of the metal wire as the air flow passes through the through hole.

[0022] According to one embodiment, the semiconductor wind speed sensor further includes a reference sensor including a pair of additional electrodes formed on the substrate and an additional metal wire electrically connecting the pair of additional electrodes, wherein the additional metal wire may be formed in an area outside the through hole.

[0023] In one embodiment, the reference sensor may calculate wind speed from a change in the resistance value of the additional metal wire according to a change in the temperature of the additional metal wire in a state of no air flow.

[0024] According to one embodiment, the metal wire is formed in the through hole or on the substrate, and the metal wire may include at least one selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), rhodium (Rh), iridium (Ir), osmium (Os), aluminum (Al), nickel (Ni), molybdenum (Mo), platinum (Pt), tungsten (W), and tantalum (Ta).

[0025] In one embodiment, the exit area of ​​the through hole may be 3% to 50% of the substrate.

[0026] The method for manufacturing a semiconductor wind speed sensor of the present invention comprises the steps of: preparing a substrate including a through hole having an inclined side surface; forming a pair of electrodes such that the through hole is positioned between them; and electrically connecting the pair of electrodes with a metal wire.

[0027] According to one embodiment, the method for manufacturing the semiconductor wind speed sensor may further include: forming a pair of additional electrodes in an area of ​​the substrate other than the through hole; and electrically connecting the pair of additional electrodes with an additional metal wire.

[0028] The present invention can provide a semiconductor wind speed sensor including a through hole having an inclined side surface and a method for manufacturing the same.

[0029] The semiconductor wind speed sensor comprising a through hole with an inclined side according to the present invention has a simple structure and can be manufactured using a simpler manufacturing method than existing wind speed sensors. Furthermore, the semiconductor wind speed sensor comprising a through hole with an inclined side according to the present invention can measure wind away from the surface, thereby providing highly reliable measurement values.

[0030] Figure 1 is a plan view of a semiconductor wind speed sensor (100) according to one embodiment of the present invention.

[0031] Figure 2 is a front view of a semiconductor wind speed sensor (100) according to one embodiment of the present invention.

[0032] Figure 3 is a plan view of a semiconductor wind speed sensor (200) according to one embodiment of the present invention.

[0033] Hereinafter, embodiments are described in detail with reference to the attached drawings. However, the embodiments may be modified in various ways, and the scope of the patent application is not limited or restricted by these embodiments. It should be understood that all modifications, equivalents, or alternatives to the embodiments are included within the scope of the patent application.

[0034] The terms used in the examples are for illustrative purposes only and should not be construed as limiting. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "comprise" or "have" are intended to indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but should be understood to not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0035] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the embodiments pertain. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0036] In addition, when describing with reference to the attached drawings, the same components will be given the same reference numerals regardless of the drawing numbers, and redundant descriptions thereof will be omitted. When describing an embodiment, if a detailed description of a related known technology is judged to unnecessarily obscure the gist of the embodiment, the detailed description thereof will be omitted. In addition, when describing components of the embodiment, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only to distinguish the components from other components, and the nature, order, or sequence of the components are not limited by the terms.

[0037] Components included in one embodiment and components with common functions will be described using the same names in other embodiments. Unless otherwise stated, the descriptions given in one embodiment may also apply to other embodiments, and detailed descriptions will be omitted to the extent of overlap.

[0038] Hereinafter, a semiconductor wind speed sensor including a through hole with an inclined side surface and a method for manufacturing the same according to the present invention will be described in detail with reference to examples and drawings. However, the present invention is not limited to these examples and drawings.

[0039]

[0040] The semiconductor wind speed sensor of the present invention comprises: a substrate including a through hole having an inclined side surface; a pair of electrodes formed on the substrate; and a metal wire electrically connecting the pair of electrodes; wherein the through hole is formed between the pair of electrodes.

[0041] The semiconductor wind speed sensor according to one embodiment of the present invention will be described with reference to the drawings.

[0042] FIG. 1 is a plan view of a semiconductor wind speed sensor (100) according to an embodiment of the present invention, and FIG. 2 is a front view of a semiconductor wind speed sensor (100) according to an embodiment of the present invention. Referring to FIGS. 1 and 2, the semiconductor wind speed sensor (100) according to the present invention includes a substrate (110) including a through hole (140) having an inclined side surface, a pair of electrodes (120) formed on the substrate, and a metal wire (130) electrically connecting the pair of electrodes. In addition, the through hole (140) having an inclined side surface is formed between the pair of electrodes (120). A portion through which an air flow (150) passes may have the same size as the through hole (140) of the substrate (110). If necessary, through holes (140) having different areas may be formed in the substrate (110).

[0043] Referring to Fig. 2, a through hole (140) having an inclined side surface may have an area that narrows in the direction in which the air flow (150) passes, and the air flow (150) passing through the through hole (140) may be amplified. The direction of the air flow (150) passing through the through hole (140) is expressed from bottom to top, but the direction is not limited thereto, and wind speed can be calculated for any direction of the air flow.

[0044] According to one embodiment, a substrate including a through hole having an inclined side surface is prepared, and a pair of electrodes may be formed on the substrate using an adhesive. The pair of electrodes may be configured at opposing positions, and the through hole may be formed between the pair of electrodes. The pair of electrodes may have a connecting portion capable of detachably attaching a metal wire, such that the metal wire may electrically connect the pair of electrodes. The metal wire may be formed on the through hole, and when a voltage is applied to the pair of electrodes to cause a current to flow through the metal wire, the temperature of the metal wire may increase, resulting in an increase in resistance. When an airflow passes through the through hole on the high-temperature metal wire and is measured, the metal wire is cooled by air cooling, resulting in a decrease in resistance, and the wind speed may be calculated from the change in resistance. In addition, a zero point correction may be performed on the result value depending on the installation environment to obtain an accurate value.

[0045] In one embodiment, the through hole may be formed between the pair of electrodes. Air may flow through the through hole, and a metal wire electrically connecting the pair of electrodes may be formed on the through hole to measure wind speed.

[0046] According to one embodiment, by configuring a pair of electrodes having the same electrode characteristics in opposing positions, uniform distribution of current can be induced, thereby solving problems such as heat generation and high power consumption caused by uneven current distribution, thereby improving efficiency and at the same time improving the characteristics and reliability of the electrodes.

[0047]

[0048] In one embodiment, the through hole may have an area that narrows in the direction in which the air flow passes, and the air flow passing through the through hole may be amplified.

[0049] According to one embodiment, the through hole may have an area that narrows in the direction in which the air flow passes, a side surface of the through hole may be formed to be inclined, and the air flow passing through the through hole may be amplified, thereby increasing the sensing sensitivity of the semiconductor wind speed sensor and improving the speed at which the air flow of the semiconductor wind speed sensor is sensed.

[0050] According to one embodiment, the metal wire is formed on the through hole, and when a voltage is applied to the pair of electrodes to cause a current to flow through the metal wire, the temperature of the metal wire increases, so that the resistance value may increase. When an air flow passing through the through hole exists on the metal wire in a high temperature state and is measured, if the air flow passing through the through hole is amplified, the speed at which the air flow passes through the through hole may increase, and the metal wire may be further cooled by air cooling, so that the resistance value may further decrease, and the wind speed may be calculated from the change in the resistance value.

[0051] In one embodiment, airflow passing through a through hole with an inclined side perpendicular to the metal wire may not be amplified, and the velocity of the unamplified airflow may be measured by back-calculating it using a calibration reference equation.

[0052]

[0053] According to one embodiment, the inclined side may be symmetrical, with a central plane of symmetry being perpendicular to the metal wire, and when the inclined side is viewed from the metal wire, the inclined side may extend radially from the central plane of symmetry to form an acute angle.

[0054] Figure 2 is a front view of a semiconductor wind speed sensor (100) according to one embodiment of the present invention.

[0055] Referring to Fig. 2, the inclined side surface of the through hole (140) is symmetrical on both sides, and the central plane of symmetry may be perpendicular to the metal wire (130). When looking at the inclined side surface from the metal wire, the inclined side surface is formed at an acute angle, for example, from a central line of symmetry that is parallel to the central plane of symmetry. It may be formed by extending out radially.

[0056] In one embodiment, the inclined side surface may be formed by etching the substrate.

[0057] For example, when the substrate is made of silicon (Si), when the substrate is etched, the acute angle may be formed as 35.3° due to the crystal structure of silicon (Si).

[0058]

[0059] In one embodiment, the acute angle may be from 10° to 70°.

[0060] In one embodiment, the acute angle may be 10° to 20°; 10° to 30°; 10° to 40°; 10° to 50°; 10° to 60°; 10° to 70°; 20° to 50°; 20° to 70°; 30° to 50°; 30° to 70°; 40° to 60°; 40° to 70°; 50° to 70°;

[0061] According to one embodiment, if the acute angle is less than 10°, there may be a problem that the air flow passing through the through hole is not amplified, and if it is more than 70°, there may be a problem that the substrate becomes thin and vulnerable to impact, making it difficult to manufacture.

[0062]

[0063] In one embodiment, the substrate may include at least one selected from the group consisting of silicon (Si), germanium (Ge), selenium (Se), gallium arsenide (GaAs), gallium arsenide phosphide (GaAsP), gallium nitride (GaN), silicon carbide (SiC), zinc sulfide (ZnS), silicon dioxide (SiO2), polyimide (PI), polyetherimide (PEI), polycarbonate (PC), polyester (PES), polystyrene (PS), polyolefin (PO), polysulfone (PSF), polyarylate (PAR), polyvinyl chloride (PVC), and cellulose ester.

[0064] In one embodiment, the substrate may have excellent power conversion efficiency, a fast response speed, and the ability to be miniaturized and lightweight. Furthermore, the energy band gap refers to the difference between the minimum energy value of the valence band, where electrons are concentrated, and the maximum energy value of the conduction band, where there are no electrons. The substrate with a larger energy band gap has the advantage of being able to operate at higher voltages and temperatures.

[0065]

[0066] According to one embodiment, the substrate further includes an insulating film formed on the substrate, and the insulating film may include at least one selected from the group consisting of an oxide film, a nitride film, an oxynitride film, an oxynitride film, a phosphosilicate-glass (PSG) film, and a boron-doped phosphosilicate-glass (BPSG) film.

[0067] According to one embodiment, the substrate may further include an insulating film formed on the substrate. The insulating film may be a single layer or a laminate of multiple films.

[0068] According to one embodiment, the insulating film may have a flat surface. For example, the insulating film may be formed such that the surface average surface roughness (Ra) is 0.5 nm or less, the root mean square roughness (Rms) is 0.6 nm or less, and preferably, the average surface roughness is 0.3 nm or less, and the root mean square roughness is 0.4 nm or less.

[0069] According to one embodiment, the insulating film may have a thickness of 50 nm to 5000 nm.

[0070] The insulating film may have a thickness of 50 nm to 200 nm; 50 nm to 500 nm; 80 nm to 700 nm; 100 nm to 1000 nm; 150 nm to 1500 nm; 250 nm to 2000 nm; 500 nm to 3000 nm; 1000 nm to 3500 nm; 1500 nm to 4000 nm; 2500 nm to 5000 nm. When the thickness of the insulating film is less than 50 nm, there may be a problem that current may leak to the substrate due to imperfection of the thin film, and when the thickness exceeds 5000 nm, there may be a problem that the integration density is lowered, performance is degraded, and malfunction is induced.

[0071] According to one embodiment, the insulating film is a silicon oxide film (SiO x), silicon nitride film (SiN x ), silicon nitride oxide film (SiN x O y ) (x>y)), or silicon nitride film (SiO x N y )(x>y)). As an insulating film, it can function as a barrier layer to prevent impurities such as movable ions or moisture contained in the supporting substrate from diffusing to the electrode.

[0072] According to one embodiment, the insulating film can be formed by a chemical vapor deposition method, a sputtering method, a spin coating method, or a plasma process.

[0073] According to one embodiment, the chemical vapor deposition method may include, but is not limited to, rapid thermal chemical vapor deposition (RTCVD), inductively coupled plasma-chemical vapor deposition (ICP-CVD), low pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), metal organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD) methods.

[0074] In one embodiment, the substrate may be formed by oxidation. The oxidation treatment of the substrate may be performed by dry thermal oxidation, but it may be preferable to add a gas containing halogen or a halogen compound. Representative examples of such gases include HCl, and other examples include HF, NF3, HBr, Cl2, ClF3, BCl3, F2, Br2, etc. The oxidation treatment of the substrate may also be performed by surface treatment using ozone water, hydrogen peroxide water, or water vapor.

[0075] In one embodiment, the nitride film can be formed through a thermal nitration process. For example, by providing a gas containing nitrogen (a nitride source) onto a substrate and heat treating the substrate at a high temperature, the surface of the substrate can be partially nitrided and converted into a nitride film. For example, the nitride film can be formed using ammonia (NH3) gas, nitrogen (N2) gas, nitrogen monoxide (NO) gas, and / or nitrous oxide (N2O) gas. Additionally, the nitride film can be formed by partially nitriding the substrate at a temperature of about 500°C to about 1,200°C.

[0076]

[0077] According to one embodiment, the substrate further includes a mesh material and may have a thickness of 50 μm to 5000 μm.

[0078] In one embodiment, the substrate may further include a material having a large pore structure to improve breathability. The material having pores may be defined as microporous (< 2 nm), mesoporous (2 nm to 50 nm), or macroporous (> 50 nm) depending on the size of the pores, and may include, for example, mesoporous silica, mesoporous metal phosphate, mesoporous metal oxides such as α-Fe2O3, γ-Fe2O3, Fe3O4, TiO2, and In2O3.

[0079] According to one embodiment, the influence of wind on the substrate can be minimized, thereby preventing the wind speed from increasing and increasing the accuracy of the calculated wind speed.

[0080] The substrate has a thickness of 50 ㎛ to 100 ㎛; 50 ㎛ to 500 ㎛; 50 ㎛ to 1000 ㎛; 100 ㎛ to 500 ㎛; 100 ㎛ to 1000 ㎛; 100 ㎛ to 1500 ㎛; 150 ㎛ to 1000 ㎛; 150 ㎛ to 1500 ㎛; 300 ㎛ to 2000 ㎛; 400 ㎛ to 2500 ㎛; 500 ㎛ to 3000 ㎛; 700 ㎛ to 3500 ㎛; 1000 ㎛ to 4000 ㎛; 1500 ㎛ to 4500 ㎛; 2500 ㎛ to 4800 ㎛; It may be 3000 ㎛ to 5000 ㎛. If the thickness of the substrate is less than 50 ㎛, there may be a problem in that the substrate is difficult to handle due to the increased risk of breakage, and if the thickness exceeds 5000 ㎛, the influence of the wind passing through the substrate may be increased, which may cause a problem in calculating accurate wind speed.

[0081]

[0082] In one embodiment, the temperature of the metal wire may be controlled by flowing a current through the metal wire.

[0083] In one embodiment, a voltage may be applied to the pair of electrodes to cause current to flow through the metal wire. The voltage applied between the pair of electrodes may be either alternating current (AC) or direct current (DC), or may be a voltage including both direct current (DC) and alternating current (AC).

[0084] According to one embodiment, the electrode may include at least one selected from the group consisting of platinum (Pt), palladium (Pd), silver (Ag), gold (Au), nickel (Ni), titanium (Ti), copper (Cu), chromium (Cr), aluminum (Al), tin (Sn), molybdenum (Mo), ruthenium (Ru), and indium (In).

[0085] In one embodiment, the pair of electrodes may have a coupling portion from which the metal wire can be detached.

[0086]

[0087] According to one embodiment, the wind speed may be calculated from a change in the resistance value of the metal wire according to a change in the temperature of the metal wire as the air flow passes through the through hole.

[0088] In one embodiment, when current is passed through the metal wire, the temperature of the metal wire increases, which may increase the resistance value. When airflow passes through the through hole on the high-temperature metal wire, the wire is cooled by air cooling, which reduces the resistance value, and the wind speed can be calculated from the change in the resistance value. In addition, zero-point correction can be performed to minimize temperature, humidity, and other influences depending on the installation environment, thereby obtaining an accurate value.

[0089]

[0090] According to one embodiment, the semiconductor wind speed sensor further includes a reference sensor including a pair of additional electrodes formed on the substrate and an additional metal wire electrically connecting the pair of additional electrodes, wherein the additional metal wire may be formed in an area outside the through hole.

[0091] Figure 3 is a plan view of a semiconductor wind speed sensor (200) according to one embodiment of the present invention.

[0092] Referring to FIG. 3, a semiconductor wind speed sensor (200) according to one embodiment of the present invention further includes a reference sensor in addition to the semiconductor wind speed sensor (100) according to one embodiment of the present invention. The reference sensor may include a pair of additional electrodes (160) formed on the substrate (110) and an additional metal wire (170) electrically connecting the pair of additional electrodes (160). The additional metal wire (170) may be formed in an area outside the through hole (140).

[0093]

[0094] In one embodiment, the reference sensor may calculate wind speed from a change in the resistance value of the additional metal wire according to a change in the temperature of the additional metal wire in a state of no air flow.

[0095] In one embodiment, when current is passed through the additional metal wire, the temperature of the additional metal wire increases, which may increase the resistance value. When no airflow exists over the additional metal wire at a high temperature, the additional metal wire cools only according to the surrounding temperature conditions, which causes the resistance value to decrease, and the wind speed can be calculated from the change in the resistance value.

[0096] In one embodiment, the reference sensor may be a control that indicates changes due to external factors.

[0097] According to one embodiment, the semiconductor wind speed sensor includes the reference sensor, and can compensate for changes due to external factors by comparing the wind speed value of the reference sensor with the wind speed value of the reference sensor, thereby improving the reliability of the wind speed value calculated from the air flow passing through the through hole. In addition, zero-point correction can be performed to minimize temperature, humidity, and other influences depending on the installation environment, thereby obtaining accurate values.

[0098]

[0099] According to one embodiment, the metal wire is formed in the through hole or on the substrate, and the metal wire may include at least one selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), rhodium (Rh), iridium (Ir), osmium (Os), aluminum (Al), nickel (Ni), molybdenum (Mo), platinum (Pt), tungsten (W), and tantalum (Ta).

[0100] In one embodiment, the metal wire may have a large temperature coefficient of resistance. In addition, the metal wire may be resistant to corrosion and capable of being heated to a high temperature of 1000°C or higher.

[0101] In one embodiment, the temperature of the metal wire may have the advantage of being relatively unaffected by changes in the ambient temperature. Furthermore, the metal wire may be capable of forming uniformly thin lines.

[0102] In one embodiment, the metal wire may have a diameter of several micrometers (㎛) to several millimeters (mm).

[0103] The above metal wire may have a diameter of 1 micrometer (㎛) or more; 10 micrometers (㎛) or more; 30 micrometers (㎛) or more; 50 micrometers (㎛) or more; 70 micrometers (㎛) or more; 100 micrometers (㎛) or more; 300 micrometers (㎛) or more; 500 micrometers (㎛) or more; 10 millimeters (mm) or less; 8 millimeters (mm) or less; 7 millimeters (mm) or less; 6 millimeters (mm) or less; 5 millimeters (mm) or less; 4 millimeters (mm) or less; 3 millimeters (mm) or less; or 1 millimeter (mm) or less. The minimum and maximum values ​​can be selected from the mentioned sizes. If the diameter of the above metal wire is less than 1 micrometer (㎛), there may be a problem that it may be unstable when measuring strong wind speeds, which may cause malfunction, and if the diameter exceeds 10 millimeters (mm), there may be a problem that the measured value may not be accurate due to a temperature difference between the inside and outside of the wire.

[0104]

[0105] In one embodiment, the exit area of ​​the through hole may be 3% to 50% of the substrate.

[0106] The exit area of ​​the above through hole may be 3% to 10%; 3% to 15%; 5% to 20%; 5% to 25%; 7% to 30%; 7% to 35%; 7% to 40%; 10% to 45%; 10% to 48%; 15% to 50% of the substrate. If the exit area of ​​the above through hole is less than 3% of the substrate, there may be a problem that the measured value may be uncertain due to the obstruction of air flow by the substrate, and if it is more than 50%, there may be a problem that the electrode and wire may not be stably positioned.

[0107] In one embodiment, the air flow may pass through the outlet area of ​​the through hole.

[0108] In one embodiment, the inlet area of ​​the through hole may be equal to or larger than the outlet area.

[0109]

[0110] The method for manufacturing a semiconductor wind speed sensor of the present invention comprises the steps of: preparing a substrate including a through hole having an inclined side surface; forming a pair of electrodes such that the through hole is positioned between them; and electrically connecting the pair of electrodes with a metal wire.

[0111] According to one embodiment, the semiconductor wind speed sensor may include an adhesive layer on the substrate.

[0112] According to one embodiment, the semiconductor wind speed sensor may include an adhesive layer to form the pair of electrodes on the substrate.

[0113] According to one embodiment, the adhesive forming the adhesive layer may include various curable adhesives, such as reaction-curable adhesives, heat-curable adhesives, photo-curable adhesives such as ultraviolet-curable adhesives, and anaerobic adhesives. Preferably, the adhesive may include powder or filler made of silver, nickel, aluminum, or aluminum nitride, and may also have high thermal conductivity.

[0114] The method for manufacturing a semiconductor wind speed sensor according to the present invention can manufacture a semiconductor wind speed sensor with improved efficiency, increased usability, and a simple structure using a simple process. This can complement the economic aspects and complex process due to the vertically tall structure and vacuum cavity formation, which are limitations of the prior art. Since air flow becomes zero as it approaches the surface, accurate measurement can be difficult. However, the semiconductor wind speed sensor according to the present invention can measure the air flow passing through the air, not the air flow passing past the surface. In addition, the semiconductor wind speed sensor can prevent heat from escaping to the surface, so it can produce highly reliable results and can measure even minute air flows.

[0115]

[0116] According to one embodiment, the method for manufacturing the semiconductor wind speed sensor may further include: forming a pair of additional electrodes in an area of ​​the substrate other than the through hole; and electrically connecting the pair of additional electrodes with an additional metal wire.

[0117] According to one embodiment, the method for manufacturing the semiconductor wind speed sensor may further include a step of forming a pair of additional electrodes in a region of the substrate other than the through hole; and a step of electrically connecting the pair of additional electrodes with an additional metal wire; thereby forming a reference sensor. The reference sensor may serve as a control sensor for excluding the influence of the temperature of the wind itself, thereby increasing the accuracy and reliability of a wind speed value passing through the through hole having the inclined side in the semiconductor wind speed sensor.

[0118]

[0119] Although the embodiments described above have been described with limited drawings, those skilled in the art will appreciate that various technical modifications and variations can be applied based on the above. For example, appropriate results can still be achieved even if the described techniques are performed in a different order than described, and / or components of the described systems, structures, devices, circuits, etc. are combined or combined in a different manner than described, or are replaced or substituted with other components or equivalents.

[0120] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims described below.

Claims

1. A substrate including a through hole having an inclined side; a pair of electrodes formed on the substrate; and a metal wire electrically connecting the pair of electrodes; The above through hole is formed between the pair of electrodes, Semiconductor wind speed sensor.

2. In paragraph 1, The above through hole has an area that narrows in the direction in which the air flow passes. The air flow passing through the above through hole is amplified, Semiconductor wind speed sensor.

3. In paragraph 1, The inclined side is symmetrical on both sides, with a central plane of symmetry being perpendicular to the metal wire, and when the inclined side is viewed from the metal wire, the inclined side extends radially from the central plane of symmetry to form an acute angle. Semiconductor wind speed sensor.

4. In paragraph 3, The above acute angle is between 10° and 70°, Semiconductor wind speed sensor.

5. In paragraph 1, The substrate comprises at least one selected from the group consisting of silicon (Si), germanium (Ge), selenium (Se), gallium arsenide (GaAs), gallium arsenide phosphide (GaAsP), gallium nitride (GaN), silicon carbide (SiC), zinc sulfide (ZnS), silicon dioxide (SiO2), polyimide (PI), polyetherimide (PEI), polycarbonate (PC), polyester (PES), polystyrene (PS), polyolefin (PO), polysulfone (PSF), polyarylate (PAR), polyvinyl chloride (PVC), and cellulose ester. Semiconductor wind speed sensor.

6. In paragraph 1, The above substrate further includes an insulating film formed on the substrate, The insulating film comprises at least one selected from the group consisting of an oxide film, a nitride film, an oxynitride film, an oxynitride film, a phosphosilicate-glass (PSG) film, and a boron-doped phosphosilicate-glass (BPSG) film. Semiconductor wind speed sensor.

7. In paragraph 1, The above substrate further includes a mesh material and has a thickness of 50 ㎛ to 5000 ㎛. Semiconductor wind speed sensor.

8. In paragraph 1, Controlling the temperature of the metal wire by flowing current through the metal wire. Semiconductor wind speed sensor.

9. In paragraph 1, The wind speed is calculated from the change in the resistance value of the metal wire according to the change in the temperature of the metal wire as the air flow passes through the through hole. Semiconductor wind speed sensor.

10. In paragraph 1, A pair of additional electrodes formed on the above substrate and comprising an additional metal wire electrically connecting the pair of additional electrodes; further comprising a reference sensor; The above additional metal wire is formed in an area outside the above through hole, Semiconductor wind speed sensor.

11. In paragraph 10, The above reference sensor calculates the wind speed from the change in the resistance value of the additional metal wire according to the change in temperature of the additional metal wire in a state where there is no air flow. Semiconductor wind speed sensor.

12. In paragraph 1, The above metal wire is formed in the through hole or on the substrate, The metal wire comprises at least one selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), rhodium (Rh), iridium (Ir), osmium (Os), aluminum (Al), nickel (Ni), molybdenum (Mo), platinum (Pt), tungsten (W), and tantalum (Ta). Semiconductor wind speed sensor.

13. In paragraph 1, The exit area of ​​the above through hole is 3% to 50% of the above substrate, Semiconductor wind speed sensor.

14. A step of preparing a substrate including a through hole having an inclined side; A step of forming a pair of electrodes such that the through hole is positioned between them; and A step of electrically connecting the above pair of electrodes with a metal wire; including, Method for manufacturing a semiconductor wind speed sensor.

15. In paragraph 14, A step of forming a pair of additional electrodes in an area outside the through hole of the above substrate; and A step of electrically connecting the above pair of additional electrodes with an additional metal wire; including more, Method for manufacturing a semiconductor wind speed sensor.

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