Groove Gamma gate transistor with high electron mobility and preparing method thereof

A high electron mobility, transistor technology, applied in the field of microelectronics, can solve the problems of weakening the input and output isolation of the device, reducing the yield of the device, and reducing the stability of the device, so as to reduce the gate leakage current and improve the breakdown voltage. , the effect of large drain-source voltage

CN101414628BInactive Publication Date: 2010-08-11XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2010-08-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a groove gamma gate transistor with high electron mobility and a fabrication method thereof. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a passivation layer (7), a gamma gate (9) and a protection layer (11); a first groove (6) is opened on the barrier layer (3), asecond groove (8) is opened on the passivation layer (7), wherein, n floating field plates (10) are deposited on the passivation layer (7) (n is not less than 1), and the floating field plates and the gamma-gate form a composite gate field plate structure. All the floating field plates have the same size and are mutually independent, and the distance between two adjacent floating field plates increases based on the number of the floating field plates arranged along the direction from the gamma gate to the drain electrode. The n floating field plates are in a floating state and are completed together with the gamma gate by one-time process. The groove gamma gate transistor has the advantages of high yield, good frequency characteristic and high output power, and the groove gamma gate transistor and the fabrication method can be used for fabricating high-frequency high power devices based on III-V group compound semiconductor heterojunction structure.
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Description

technical field The invention belongs to the technical field of microelectronics, and relates to semiconductor devices, in particular to a grooved Γ-gate high electron mobility transistor based on the heterojunction structure of III-V compound semiconductor materials, which can be used as a microwave, millimeter wave communication system and radar system. basic device. technical background As is well known in the industry, semiconductor materials composed of group III elements and group V elements, that is, group III-V compound semiconductor materials, such as gallium nitride (GaN)-based, gallium arsenide (GaAs)-based, indium phosphide (InP)-based And other semiconductor materials, their bandgap widths are often quite different, so people usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the band gap of III-V compound semiconductor materials on both sides of the heterojunction interface in the ...

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