Schottky barrier diode device structure and manufacturing method thereof

A technology of Schottky potential and device structure, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as unsatisfactory performance, achieve simple structure and steps, significant effects, and broad application prospects

CN103943688AActive Publication Date: 2014-07-23CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2014-07-23

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Abstract

The invention provides a Schottky barrier diode device structure and a manufacturing method of the structure. The device structure comprises a first conductive type substrate, first conductive type epitaxial layers which are combined on the surface of the first conductive type substrate, a plurality of groove structures, second conductive type doping areas, a Schottky metal layer and an upper electrode. The groove structures comprise grooves formed in the first conductive type epitaxial layers, dielectric layers combined on the surfaces of the grooves, and conductive materials, the grooves are filled with the conductive materials, the second conductive type doping areas are formed at the positions, arranged on two sides of the groove structures, of the surfaces of the first conductive type epitaxial layers, and the Schottky metal layer is formed on the surfaces of the first conductive type epitaxial layers. The doping areas are added on two sides of the groove structures, the P / N knot is introduced, electric fields of the areas are reduced, and therefore reverse leakage currents are reduced. Meanwhile, JFET structures are introduced between the doping areas, reverse breakdown voltages of the Schottky barrier diode device structure are improved, and the reverse leakage currents are reduced.
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Description

technical field

[0001] The invention belongs to the field of semiconductors and semiconductor manufacturing, in particular to a Schottky barrier diode device structure and a manufacturing method thereof. Background technique

[0002] With the continuous development of semiconductor technology, power devices, as a new type of device, are widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. However, existing devices such as MOS transistors cannot meet the above requirements. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention.

[0003] Schottky diodes are generally metal-semiconductor devices made with noble metals (gold, silver, aluminum, platinum, etc.) as the positive pole and N-type semiconductors as the negative pole, using the rectification characteristics of the potential barrier formed on the contact surface of...

Examples

Embodiment Construction

[0045] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0046] see Figure 2 to Figure 12. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...