Field effect transistor, marginal structure and relative manufacture method

Abstract

The invention provides a field effect transistor, a marginal structure used for the field effect transistor and manufacture methods of the field effect transistor and the marginal structure. The field effect transistor comprises a transistor unit formed in an effective unit region and the marginal structure formed in a marginal region. The marginal structure comprises a plurality of groove-type isolation units which are sequentially distributed from inner side to outer side of the marginal region, wherein the starting groove-type isolation unit nearest to the inner side of the marginal region divides a body region of the field effect transistor into an effective body region and a suspension body region in electricity suspension, the starting groove-type isolation unit is connected with a grid region of the transistor unit in an electric coupling mode, and other groove-type isolation units are in electric suspension. The marginal region can not only well isolate the marginal region from the effective unit region so as to protect the transistor unit in the effective unit region against being influenced by carriers of the marginal region, but also solve the problem that the starting groove-type isolation unit is prone to breakdown, and has relatively high reverse breakdown voltage and good operation stability.

Description

technical field

[0001] Embodiments of the present disclosure relate to semiconductor devices, particularly but not limited to field effect transistors and methods of manufacturing the same. Background technique

[0002] Semiconductor devices such as Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Junction Field Effect Transistor (JFET) and Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOS) have been widely used in the electronics industry. In some applications, such as power switches for switching voltage converters, field effect transistors should have good current handling capabilities, low on-resistance Rds ON , higher breakdown voltage BV and good safety and durability.

[0003] Field effect transistors such as MOSFETs, JFETs, DMOSs, etc. are usually fabricated on a semiconductor substrate and have an active cell area and an edge area. The effective cell area includes at least one field effect transistor unit, has a gate area, a source...

Examples

Embodiment Construction

[0026] Some embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0027] In the following description, some specific details, such as the specific circuit structure, device structure, process steps and specific parameters of these circuits, devices and processes in the embodiments, are used to provide a better understanding of the embodiments of the present disclosure . It will be understood by those skilled in the art that the embodiments of the present disclosure may be practiced even without some details or in combination with other methods, elements, materials, and the like.

[0028] In the desc...

technical field

[0001] Embodiments of the present disclosure relate to semiconductor devices, particularly but not limited to field effect transistors and methods of manufacturing the same. Background technique

[0002] Semiconductor devices such as Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Junction Field Effect Transistor (JFET) and Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOS) have been widely used in the electronics industry. In some applications, such as power switches for switching voltage converters, field effect transistors should have good current handling capabilities, low on-resistance Rds ON , higher breakdown voltage BV and good safety and durability.

[0003] Field effect transistors such as MOSFETs, JFETs, DMOSs, etc. are usually fabricated on a semiconductor substrate and have an active cell area and an edge area. The effective cell area includes at least one field effect transistor unit, has a gate area, a source...

Examples

Embodiment Construction

[0026] Some embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0027] In the following description, some specific details, such as the specific circuit structure, device structure, process steps and specific parameters of these circuits, devices and processes in the embodiments, are used to provide a better understanding of the embodiments of the present disclosure . It will be understood by those skilled in the art that the embodiments of the present disclosure may be practiced even without some details or in combination with other methods, elements, materials, and the like.

[0028] In the desc...

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