LED and light-emitting device

Abstract

The present invention provides an LED and a light-emitting device. The LED bracket used by the LED includes a substrate with a flat front and a circuit layer arranged on the substrate and insulated from the substrate, that is, the LED bracket itself is provided with the circuit layer, and the circuit layer includes a circuit for connecting LED chips in a lamp bead area on the substrate with connection points of other lamp beads and / or other devices on the substrate. In this way, when it is necessary to electrically connect the LED to other LEDs or other devices, the connection with other lamp beads or devices can be directly achieved through the circuit layer of the LED bracket itself, and there is no need to additionally use a circuit board. This can simplify the connection structure and avoid the increase in size and cost caused by the use of a circuit board, so that it can be better applied to various application scenarios; at the same time, it can improve the reliability and stability of a backlight unit made using the LED.

Description

Technical Field

[0001] The present invention relates to the field of LED (Light Emitting Diode), and in particular to an LED and a light emitting device. Background Art

[0002] With the development of LED technology and its application in various fields and scenarios, LED structures that meet various needs have emerged. In various LED structures, LED brackets are basically used, and in order to meet various needs, LED brackets of various sizes, structures and materials have also been derived. However, the current LED bracket structure is only set to carry the LED chip, protect the LED chip, and lead out the positive and negative poles of the LED chip. The current various LED brackets do not undertake circuit wiring. When it is necessary to electrically connect the LED to other LEDs or other devices in some application scenarios, the electrical connection can only be achieved through an additional PCB board circuit.

[0003] In addition, when it is necessary to set multiple LED chips connected in series, parallel or in series and parallel in a LED bracket, the current practice is to set multiple LED chips on the bracket substrate and then connect the LED chips through additional gold wires. For example, see Figure 1-Figure 2 A typical LED structure is shown in FIG. Figure 1 Ignore the top view of the LED after removing the fluorescent glue. Figure 2 for Figure 1 A cross-sectional view of an LED, Figure 1-Figure 2 In the present invention, if it is necessary to set a plurality of LED chips 11 connected in series in the LED bracket 1, the current method can only realize the electrical connection between the positive and negative electrodes of adjacent LED chips 11 in the series circuit in sequence through gold wires. Figure 1 As shown in the figure, by using additional gold wires at the bottom of the LED bracket to connect the LED chips 11, the lines that need to be connected are many and complicated, the welding process to achieve the connection is inefficient, and due to the size limitation of the LED bracket, it is easy to cause desoldering, cold soldering and even welding errors, resulting in high product cost, poor product quality yield and reliability, and Figure 1-Figure 2 What is shown only requires the simplest series connection between the LED chips 11. If it is necessary to realize a mixed series-parallel connection or other complex connection methods between the LED chips in an LED bracket, it is basically impossible to realize it in the current LED bracket structure. Summary of the invention

[0004] The LED and the light emitting device provided by the present invention mainly solve the technical problem of: solving the problem that the existing LED bracket cannot bear the circuit wiring.

[0005] In order to solve the above technical problems, the present invention provides an LED, including a substrate with a flat front, a circuit layer located on the front side of the substrate and insulated and isolated from the substrate, and at least one LED chip, a lamp bead area is provided on the front side of the substrate, the LED chip is arranged in the lamp bead area, and the circuit layer includes a circuit for connecting the LED chip in the lamp bead area on the substrate with connection points of other lamp beads and / or other devices on the substrate.

[0006] In an embodiment of the present invention, the peak wavelengths of light emission of the LED chips in the lamp bead area are the same.

[0007] In an embodiment of the present invention, the LED chips arranged in the lamp bead area include at least two LED chips with different peak emission wavelengths.

[0008] In one embodiment of the present invention, it further includes a light emitting conversion layer, a transparent adhesive layer or a diffusion adhesive layer located on the LED chip.

[0009] In one embodiment of the present invention, the peak wavelengths of the light emission of the LED chips in the lamp bead region are the same, and when the LED includes a light emission conversion layer, the light emission conversion layer is a phosphor glue layer, a fluorescent film or a quantum dot QD film;

[0010] The LED chips arranged in the lamp bead area include at least two LED chips with at least two different peak light-emitting wavelengths, and when the LED includes a light-emitting conversion layer, the LED chips arranged in the lamp bead area include chips with two different peak light-emitting wavelengths or chips with three different peak light-emitting wavelengths or chips with multiple (i.e., greater than three) different peak light-emitting wavelengths, and the light-emitting conversion layer includes a phosphor glue layer, a fluorescent film or a QD film.

[0011] In one embodiment of the present invention, the LED chip in the lamp bead area includes any one or a combination of at least two of the following chips:

[0012] Blue LED chips with a peak emission wavelength of 440nm to 500nm;

[0013] Green LED chips with a peak emission wavelength of 510nm to 540nm;

[0014] Yellow LED chips with a peak emission wavelength of 550nm to 570nm;

[0015] Red LED chips with a peak emission wavelength of more than 620nm;

[0016] The luminescence conversion layer is a luminescence conversion layer that converts the light emitted by the LED chip into preset mixed color light.

[0017] In an embodiment of the present invention, the preset mixed color light includes white light.

[0018] In an embodiment of the present invention, the luminescence conversion layer, the transparent adhesive layer or the diffusion adhesive layer is disposed on the LED chip by dispensing, molding or spraying.

[0019] In one embodiment of the present invention, the front side of the substrate is also provided with a first functional electrical connection area which is insulated from the substrate itself and electrically connected to the circuit layer, and / or the back side of the substrate is provided with a second functional electrical connection area which is insulated from the substrate and electrically connected to the circuit layer.

[0020] In one embodiment of the present invention, the circuit layer is further provided with at least one of a protective coating, an insulating protective film and a metal plating layer;

[0021] The protective coating comprises a solder resist ink coating, the protective film comprises an insulating reflective film, and the metal plating layer is a single metal layer or a composite metal layer composed of at least two metal layers.

[0022] In one embodiment of the present invention, the substrate includes at least two lamp bead areas, and the circuit layer includes a positive pin welding area and a negative pin welding area corresponding to the positive pin and negative pin of the LED chip to be placed in each lamp bead area, and a circuit for electrically connecting the at least two lamp bead areas.

[0023] In one embodiment of the present invention, the substrate has a lamp bead area, the circuit layer includes a positive pin welding area and a negative pin welding area corresponding to the positive pin and negative pin of the LED chip to be placed in the lamp bead area, and the lamp bead area is used to place one LED chip or at least two LED chips.

[0024] In one embodiment of the present invention, at least two LED chips are arranged in at least one of the lamp bead areas, and the circuit layer also includes a chip connection circuit for realizing electrical connection between the LED chips in the lamp bead area; the at least two LED chips are connected through the chip connection circuit.

[0025] To solve the above technical problems, an embodiment of the present invention further provides a light-emitting device, comprising any of the LEDs described above, wherein the light-emitting device is a lighting device, a light signal indicating device, a fill light device or a backlight device.

[0026] The beneficial effects of the present invention are:

[0027] The LED and light-emitting device provided by the present invention, the LED bracket used by the LED includes a substrate with a flat front side and a circuit layer arranged on the substrate and insulated from the substrate, that is, the LED bracket itself is provided with a circuit layer, and the circuit layer includes a circuit for connecting the LED chips in the lamp bead area on the substrate with the connection points of other lamp beads and / or other devices on the substrate. In this way, when it is necessary to electrically connect the LED with other LEDs or with other devices, the connection with other lamp beads or devices can be directly achieved through the circuit layer of the LED bracket itself, and there is no need to use an additional circuit board. This can simplify the connection structure and avoid the increase in size and cost caused by the use of a circuit board, and can be better applied to various application scenarios; at the same time, it can improve the reliability and stability of the backlight unit made using the LED.

[0028] Furthermore, in the present invention, when it is necessary to arrange multiple LED chips in a lamp bead area, the circuit layer may also include a circuit for realizing electrical connection between the LED chips in the lamp bead area, that is, the circuit for realizing connection between multiple LED chips arranged in a lamp bead area of ​​the LED bracket (which can be series connection, parallel connection, or a mixture of series and parallel connection, etc.) has been pre-set inside the LED bracket. When in use, it is only necessary to connect the positive and negative pins of the LED chip arranged in the bracket to the corresponding positive pin welding area and negative pin welding area in the bracket, respectively. This can not only simply and reliably realize the connection between the LED chips in the bracket and meet various connection requirements between the LED chips in the bracket in various scenarios, but also ensure the quality and yield of the product, improve the production efficiency of LED products, and further reduce costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a top view of an LED structure;

[0030] Figure 2 for Figure 1 A cross-sectional view of an LED structure in FIG.

[0031] Figure 3 A schematic diagram of an LED bracket structure in which the circuit layer is higher than the front side of the substrate provided in the first embodiment of the present invention;

[0032] Figure 4 A schematic diagram of an LED bracket structure in which the circuit layer is flush with the front surface of the substrate provided in the first embodiment of the present invention;

[0033] Figure 5 A schematic diagram of an LED bracket structure in which the insulating layer is an integral structure provided in the first embodiment of the present invention;

[0034] Figure 6 A schematic diagram of an LED bracket structure in which the shapes of the insulating layer and the circuit layer are adapted to each other provided in the first embodiment of the present invention;

[0035] Figure 7 A schematic diagram of the structure of an LED support with multiple dams provided in the first embodiment of the present invention;

[0036] Figure 8 A schematic structural diagram of an LED bracket with a conductive substrate provided in Embodiment 1 of the present invention, in which a functional electrical connection area is arranged on the back of the substrate;

[0037] Fig. 9 A schematic diagram of a structure in which a functional electrical connection area is arranged on the back of an LED support with an insulating substrate provided in Embodiment 1 of the present invention Figure 1 ;

[0038] Figure 10-1 A schematic diagram of a structure in which a functional electrical connection area is arranged on the back of an LED support with an insulating substrate provided in Embodiment 1 of the present invention Figure 2 ;

[0039] Figure 10-2 for Figure 10-1 A schematic diagram of a structure in which a connector is provided;

[0040] Figure 11-1 A schematic diagram of a structure in which a functional electrical connection area is arranged on a circuit layer of an LED support with an insulating substrate provided in Embodiment 1 of the present invention;

[0041] Figure 11-2 for Figure 11-1 A schematic diagram of a gold finger interface in a first functional electrical connection area;

[0042] Figure 12-1 A schematic structural diagram of an LED bracket with a conductive substrate provided in Embodiment 1 of the present invention, in which functional electrical connection areas are provided on both the front and back sides of the substrate;

[0043] Figure 12-2 for Figure 12-1 A schematic diagram of the electrical connection interface structure in the first functional electrical connection area;

[0044] Figure 13-1 A schematic diagram of an LED structure provided in Embodiment 2 of the present invention, which has a conductive flat substrate and an LED chip mounted upright on the substrate;

[0045] Figure 13-2 A top view of an LED structure provided in the second embodiment of the present invention, which has a conductive flat substrate, divides four longitudinal die-bonding areas into a lamp bead area, and has an LED chip mounted on the substrate;

[0046] Figure 13-3 A top view of an LED structure provided in the second embodiment of the present invention, which has a conductive flat substrate, divides a die-bonding area into a lamp bead area, and has an LED chip mounted on the substrate;

[0047] Figure 13-4 A schematic diagram of the structure of a conductive flat substrate, a fluorescent adhesive layer, and a front-mounted LED chip provided in the second embodiment of the present invention;

[0048] Figure 13-5 A schematic diagram showing that the LED chips provided in the second embodiment of the present invention include a red LED chip, a blue LED chip and a green LED chip;

[0049] Figure 13-6 A schematic diagram of an LED chip provided in Embodiment 2 of the present invention including a red LED chip, a blue LED chip, a green LED chip and an LED chip unit emitting white light;

[0050] Fig.14 A schematic diagram of an LED structure provided in Embodiment 2 of the present invention, which has an insulating flat substrate and an LED chip mounted upright on a circuit layer;

[0051] Fig.15 A schematic diagram of an LED structure provided in Embodiment 2 of the present invention, which has a conductive flat substrate and an LED chip mounted upright on an insulating layer;

[0052] Fig.16 A schematic diagram of an LED structure provided in Embodiment 2 of the present invention, which has a conductive flat substrate and an LED chip flipped on the substrate;

[0053] in, Figure 1-Figure 2 Reference numeral 1 is an LED bracket, and 11 is an LED chip; Figure 3 Reference numeral 31 denotes a substrate, and 32 denotes a circuit layer; Figure 4 Reference numeral 41 denotes a substrate, and 42 denotes a circuit layer; Figure 5 Reference numeral 51 denotes a substrate, 52 denotes a circuit layer, and 53 denotes an insulating layer; Figure 6 Reference numeral 61 denotes a substrate, 62 denotes a circuit layer, and 63 denotes an insulating layer; Figure 7 Reference numeral 71 denotes a substrate, 721 denotes a circuit, and 74 denotes a dam; Figure 8 Reference numeral 81 denotes a conductive substrate, 82 denotes a circuit layer, 83 denotes a first insulating layer, 812 denotes a through hole, 84 denotes a conductor, and 85 denotes a second insulating layer; Fig. 9 Reference numeral 91 denotes an insulating substrate, 92 denotes a circuit layer, 912 denotes a through hole, and 94 denotes a metal conductor; Figure 10-1 and Figure 10-2 Reference numeral 101 is an insulating substrate, 102 is a circuit layer, 1012 is a through hole, 104 is a metal conductive layer, and 105 is a connector; Figure 11-1 and Figure 11-2 Reference numeral 111 denotes an insulating substrate, 112 denotes a circuit layer, 116 denotes a first functional electrical connection region, and 1161 denotes a gold finger interface; Figure 12-1 and Figure 12-2 In the figure, 121 is a conductive substrate, 122 is a circuit layer, 123 is a first insulating layer, 124 is a metal conductor, 1212 is a through hole, 125 is a second insulating layer, 126 is a first functional electrical connection area, and 1261 is a welding point as an electrical connection interface; Figure 13-1 , Figure 13-2 , Figure 13-3 , Figure 13-4 , Figure 13-5 , Figure 13-6 The reference numeral 131 is a substrate, 132 is an LED chip, 133 is a circuit layer, 134 is a metal wire, 135 is an insulating layer, 136 is a solid crystal area, 1321 is a positive pin of the LED chip 132, 1322 is a negative pin of the LED chip 132, 1331 is a positive pin welding area, 1332 is a negative pin welding area, 137 is a lamp bead area, 138 is a circuit for electrically connecting two lamp bead areas 137, and 139 is a fluorescent glue layer; Fig.14 In the figure, reference numeral 141 is a substrate, 142 is an LED chip, 143 is a circuit layer, 144 is a metal wire, 1421 is an anode pin of the LED chip 142, 1422 is a cathode pin of the LED chip 142, 1431 is a cathode pin welding area, and 1432 is a cathode pin welding area; Fig.15 In the figure, reference numeral 151 is a substrate, 152 is an LED chip, 153 is a circuit layer, 154 is a metal wire, 155 is an insulating layer, 1521 is an anode pin of the LED chip 152, 1522 is a cathode pin of the LED chip 152, 1531 is a cathode pin welding area, and 1532 is a cathode pin welding area; Fig.16 In the figure, reference numeral 161 is a substrate, 162 is an LED chip, 163 is a circuit layer, 164 is an insulating layer, 1621 is a positive pin of the LED chip 162, 1622 is a negative pin of the LED chip 162, 1631 is a positive pin welding area, and 1632 is a negative pin welding area. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the following is a further detailed description of the embodiments of the present invention through specific implementation methods combined with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0055] Embodiment 1:

[0056] In order to solve the various problems caused by the existing LED bracket that can only protect the LED chip and lead out the positive and negative poles of the LED chip, but cannot bear the circuit wiring, this embodiment provides an LED made by using an LED bracket with a circuit. The circuit of the LED bracket can meet the circuit of connecting the LED chip to be placed in the lamp bead area on the substrate with other lamp beads (which can be other lamp beads on the same substrate or lamp beads formed on other substrates) and / or other devices on the substrate (theoretically, it can be any other device, including but not limited to various chips, resistors, capacitors and other circuit components, etc., and these devices can be arranged on the substrate to form a whole with the LED package, or they can be not arranged on the substrate and can be located outside the LED bracket). When it is necessary to electrically connect the LED with other LEDs or other devices, the connection with other lamp beads or devices can be directly realized through the circuit layer of the LED bracket itself, and no additional circuit board is required, which can not only simplify the connection structure, but also avoid the increase in size and cost caused by the use of circuit boards.

[0057] In this embodiment, when it is necessary to arrange multiple LED chips in a lamp bead area, the circuit layer may also include a circuit to realize electrical connection between the LED chips in the lamp bead area, without the need to use an additional PCB board outside the LED or to use additional gold wires in the LED bracket to realize electrical connection between the LED chips. The use of this LED bracket can greatly improve the reliability, versatility and yield rate of LED products and reduce the cost of LED products.

[0058] In this embodiment, a lamp bead area on the substrate refers to an area on the substrate where an LED chip is arranged to form a lamp bead, and it should be understood that the lamp bead area on the substrate in this embodiment refers to a space located above the substrate, including the lamp bead area being directly arranged on the substrate, and also including the lamp bead area being arranged on the insulating layer or circuit layer on the substrate, and the specific setting can be flexibly made according to the application scenario. And the lamp bead area may include at least one solid crystal area.

[0059] It should be understood that in this embodiment, the insulation isolation method between the circuit layer and the substrate can be flexibly set. For example, when the substrate itself is an insulating substrate, the circuit layer can be directly arranged on the substrate, and the circuit layer and the substrate are already in an insulation isolation state. When the substrate is a conductive substrate, an insulation layer can be arranged between the substrate and the circuit layer, or insulation isolation can be achieved by any other insulation isolation method.

[0060] In this embodiment, the conductive substrate can be a substrate made of various conductive materials, for example, various metal conductive substrates, including but not limited to copper substrates, aluminum substrates, and iron substrates; the conductive substrate can also be a mixed material conductive substrate containing conductive materials, such as conductive rubber.

[0061] In this embodiment, the insulating substrate may be a substrate made of various insulating materials, and may also include a substrate that contains conductive materials inside and is made of insulating materials outside, and is non-conductive as a whole. For example, insulating materials may include but are not limited to epoxy resins (EP, Epoxide resin), high temperature resistant nylon (PPA plastic), polyphthalamide (PPA, Polyphthalamide), poly 1,4-cyclohexylenedimethylene terephthalate (PCT, Poly1,4-cyclohexylenedimethylene terephthalate), epoxy molding compound (EMC, Epoxy molding compound), unsaturated polyester (UP) resin, liquid crystal polymer (LCP, Liquid Crystal Polymer), sheet molding compound (SMC, Sheet molding compound), polyester resin (PET, Polyethylene terephthalate), polycarbonate (PC, Polycarbonate), polyhexamethylene adipamide (nylon66).

[0062] In this embodiment, the substrate can be a planar substrate with a flat front surface, or a non-planar substrate with a convex structure or a concave structure on the front surface, and the corresponding convex area and concave area can be used to set the LED chip, that is, the convex area or the concave area can be used as a solid crystal area. In this embodiment, the circuit layer may be covered in whole or in part in the convex area or the concave area, or may not be covered in the circuit layer, which can be flexibly set according to actual needs and application scenarios.

[0063] In this embodiment, the circuit layer on the substrate can be flush with the front surface of the substrate, or can be higher than the front surface of the substrate, or slightly lower than the front surface of the substrate. The specific configuration can be flexibly determined based on factors such as the process used to make the LED bracket, the specific application scenario, etc. For example, in an exemplary structure, the circuit layer is higher than the front surface of the substrate. Figure 3 As shown, Figure 3 The middle circuit layer 32 is higher than the substrate front surface of the substrate 31. In another example, see Figure 4 As shown, Figure 4 The middle circuit layer 42 is flush with the upper surface of the substrate 41 .

[0064] In addition, it should be understood that in this embodiment, when it is necessary to add an insulating layer between the substrate and the circuit layer, and the insulating layer is used to insulate and isolate the substrate from the circuit layer, the insulating layer provided can directly cover the entire area on the substrate corresponding to the circuit layer. In this case, the insulating layer is an integral structure; for example, see Figure 5 As shown, an insulating layer 53 is provided between the substrate 51 and the circuit layer 52, and the insulating layer 53 covers the area on the substrate 51 corresponding to the circuit layer 52. In this embodiment, the insulating layer can also be adapted to the shape of the circuit layer, as long as the circuit layer can be reliably insulated and isolated from the substrate. For example, see Figure 6 As shown, an insulating layer 63 is provided between the substrate 61 and the circuit layer 62 . The shape and size of the insulating layer 63 match those of the circuit layer 62 . The area not covered by the circuit layer 62 is also not covered by the insulating layer 63 .

[0065] In this embodiment, the insulating layer can be made of various insulating materials for insulation isolation, such as but not limited to insulating paint, insulating glue, insulating paper, insulating fiber products, plastic, rubber, varnished cloth paper, glass, ceramics, etc.

[0066] In this embodiment, when the circuit layer includes the positive electrode pin welding area and the negative electrode pin welding area, the specific distribution position and distribution mode of the positive electrode pin welding area and the negative electrode pin welding area on the circuit layer can be flexibly set. In addition, when the circuit layer also includes a circuit for connecting the LED chips in a lamp bead area (i.e., a chip connection circuit), it can include at least one of the chip connection circuits for connecting the LED chips in series, in parallel, or in a series-parallel hybrid connection, and can be flexibly set according to the application scenario and requirements of the LED bracket.

[0067] In this embodiment, the number of lamp bead areas on the substrate can be flexibly set, and the number of LED chips set in each lamp bead area can also be flexibly set. For example, the substrate can be set to include at least two lamp bead areas, the circuit layer includes a circuit to realize the connection between the lamp bead areas, and one LED chip can be set in one lamp bead area, or at least two LED chips can be set, and the circuit layer includes a pin welding area connected to the LED chips in each lamp bead area. Optionally, the LED bracket in this embodiment can use a dam or not, and the specific structure can be flexibly set according to actual needs. For example, in one example, a dam can be used, and at this time one lamp bead area can correspond to one dam.

[0068] For example, in one embodiment, the substrate includes at least two lamp bead areas, the circuit layer includes a positive pin welding area and a negative pin welding area corresponding to the positive pin and the negative pin of the LED chip to be placed in each lamp bead area, and a circuit for electrically connecting at least two lamp bead areas. The number of LED chips in each lamp bead area can be set to be the same or different, and can be flexibly set according to actual conditions.

[0069] In another embodiment, the substrate has a lamp bead area, and the circuit layer includes a positive pin welding area and a negative pin welding area corresponding to the positive pin and the negative pin of the LED chip to be placed in the lamp bead area. The number of LED chips in the lamp bead area can be set to one, or two or more, and can be flexibly set according to actual conditions.

[0070] In another embodiment, at least two LED chips are arranged in at least one lamp bead area, and the circuit layer also includes a chip connection circuit for realizing electrical connection between the LED chips in the lamp bead area; at least two LED chips are connected through the chip connection circuit.

[0071] When multiple dams are set on the substrate, a dam and the LED chip in the dam are equivalent to an LED lamp bead made using an existing LED bracket, that is, the LED bracket provided in this embodiment can realize the arrangement of multiple lamp beads on one substrate, and the multiple lamp beads can be connected in series, in parallel, or in combination of series and parallel through the built-in circuit layer of the LED bracket. Compared with the existing LED bracket, the integration is further improved, and compared with the existing method of using multiple LEDs in combination, the product cost is reduced and the product size is reduced.

[0072] See also Figure 7 As shown in the figure, a plurality of dams 74 are arranged on a substrate 71 (the circuit layer is not drawn in the figure, and it should be understood that the dam may also be directly arranged on the circuit layer, or part of it may be arranged on the circuit layer and part of it may be arranged on the substrate), and the dam 74 may include a lamp bead area, and at least only one LED chip may be arranged in one lamp bead area, and when multiple LED chips are arranged in one lamp bead area, these multiple LED chips may be connected in parallel, in series, or in combination of series and parallel. In this embodiment, the circuit layer also includes a circuit 721 arranged outside the dam 74 for connecting the LED chips in each dam 74. At this time, it can be regarded as a dam as a unit, and a dam and the LED chip in the dam are equivalent to the LED using the existing LED bracket. In this way, this embodiment realizes a structure similar to the existing integrated arrangement of multiple LEDs through a PCB board on a substrate, and the cost is lower than the existing arrangement method, the size is smaller, and the integration is higher.

[0073] According to the above examples, in this embodiment, the circuit layer provided on the substrate can realize the connection between the lamp beads and / or the connection between the lamp beads and other devices, and can also realize the connection between the LED chips in the lamp bead area.

[0074] According to requirements, the circuit layer in this embodiment can also be arranged on the entire front side of the substrate, or at least a part of it can extend out of the lamp bead area on the substrate to arrange circuits connected to other lamp beads and / or devices, such as but not limited to driving circuits (the driving circuit can be a driving circuit for driving the LED chip, or it can be a driving circuit for the entire circuit layer or other devices), control circuits for controlling the LED chip (including but not limited to local dimming circuits), etc.

[0075] In this embodiment, the control circuit and the drive circuit may be only the basic lines required to realize control and drive, and do not include various electronic components (such as resistors, capacitors, various chips (such as driver chips)) required to realize control and drive. The points where various components are connected on these basic lines are the connection points of the above-mentioned devices. In addition, the various electronic components required to realize control or drive in this embodiment can be arranged on the front side of the substrate, on the back side of the substrate, or outside the substrate according to the needs. For example, when the circuit layer includes a drive circuit, a driver chip in the form of a bare chip can be used, and the driver chip can be arranged on the back side or the front side of the substrate, so that the driver chip and / or other components can be integrated into the LED bracket, which is more conducive to reducing the size and assembly of the LED application module.

[0076] In this embodiment, in order to realize the connection between the circuit layer and the outside of the bracket or to facilitate the connection between the circuit layer and the devices in the bracket or the modules in the circuit layer, a functional electrical connection area which is insulated from the substrate and electrically connected to the circuit layer on the substrate can be flexibly set on the back side and / or the front side of the substrate. And the specific connection position between the functional electrical connection area set in this embodiment and the circuit layer can be specifically determined according to the function to be realized by the functional electrical connection area.

[0077] In this embodiment, the setting of the functional electrical connection area on the LED bracket can be flexibly set. For example, instead of leading out the functional electrical connection area on the back side of the substrate, a functional electrical connection area insulated and isolated from the substrate can be set on the front side of the substrate (in this case, the functional electrical connection area may be directly located on the substrate or on the circuit layer), or the functional electrical connection area can be set on both the back and front sides of the substrate according to the needs. In this embodiment, when the functional electrical connection area is set on the front side of the substrate, the functional electrical connection area set on the front side of the substrate can be called the first functional electrical connection area, and the connection points of other devices can also be set in the first functional electrical connection area; when the functional electrical connection area is set on the back side of the substrate, the functional electrical connection area on the back side of the substrate can be called the second functional electrical connection area, and according to the needs, the connection points of other devices can also be connected to the second functional electrical connection area. In this embodiment, the interface of the functional electrical connection area for connecting to the outside is called the electrical connection interface (as shown above, it may be the connection point of other devices), and the electrical connection interface can be set as an electrical connection jack, a PIN pin terminal, a gold finger interface or a pad interface, etc.

[0078] In this embodiment, when the second functional electrical connection area is provided on the back side of the substrate, the specific connection position between the second functional electrical connection area provided on the back side of the substrate and the circuit layer can be specifically determined according to the specific function to be realized by the second functional electrical connection area. In this embodiment, the connection between the second functional electrical connection area on the back side and the circuit layer can be realized along the path from the front side of the substrate to the side and then to the back side, or a through hole can be directly opened from the front side of the substrate to the back side, and the second functional electrical connection area can be realized by setting a conductor in the through hole to be electrically connected to the corresponding position of the circuit layer.

[0079] For ease of understanding, this embodiment is described below using two cases, a conductive substrate and an insulating substrate, respectively.

[0080] When the substrate is a conductive substrate (such as a metal substrate), an insulating layer (referred to as the first insulating layer in this example) is provided between the conductive substrate and the circuit layer, and a second functional electrical connection area is provided on the back of the conductive substrate, which is insulated from the conductive substrate and electrically connected to the circuit layer. Optionally, a through hole that passes through the front and back of the conductive substrate may be provided on the conductive substrate, an insulating layer (referred to as the second insulating layer in this example) is provided on the inner side wall of the through hole, a conductor is provided in the through hole, the conductor is insulated from the conductive substrate by the second insulating layer, the upper end of the conductor passes through the first insulating layer and is electrically connected to the circuit layer, and the lower end extends along the through hole to the back of the conductive substrate as an electrical connection interface of the second functional electrical connection area. For ease of understanding, this embodiment is combined with Figure 8The cross-sectional structure shown is an example for further explanation. A first insulating layer 83 and a circuit layer 82 are provided on the conductive substrate 81, wherein a through hole 812 is opened on the conductive substrate 81, a second insulating layer 85 is formed on the hole wall of the through hole 812, and a conductor 84 is provided in the through hole 812, and the conductor 84 passes through the first insulating layer 83 and is electrically connected to the corresponding position on the circuit layer 82. In this embodiment, the lower end of the conductor 84 serves as an external electrical connection interface of the second functional electrical connection area, which can be flush with the back of the conductive substrate, or maintained in the through hole at a position slightly lower than the opening on the back of the through hole, or extended out of the back of the conductive substrate 81, but the extended part needs to be insulated from the conductive substrate 81. In this embodiment, when the electrical connection interface is a PIN pin terminal, the lower end of the conductor 84 extends out of the through hole, and is a PIN pin terminal insulated and isolated from the back of the conductive substrate, or is a gold finger interface extending out of the through hole and insulated and isolated from the back of the conductive substrate, that is, the electrical connection interface can be set to various interface structures for realizing electrical connection. It should be understood that Figure 8 The conductor 84 in the figure can be made of various conductive materials, such as but not limited to copper, aluminum, silver, etc.

[0081] When the substrate is an insulating substrate, a second functional electrical connection area electrically connected to the circuit layer is provided on the back of the insulating substrate. Optionally, a through hole penetrating the front and back of the insulating substrate is provided on the insulating substrate, and a conductor is provided in the through hole. The upper end of the conductor is electrically connected to the circuit layer, and the lower end extends along the through hole to the back of the insulating substrate as an electrical connection interface of the second functional electrical connection area. In this embodiment, the structural form of the conductor includes but is not limited to the two forms shown in the following examples.

[0082] In one form, the conductor is a metal conductor embedded in the through hole, and the size of the conductor matches the size of the through hole. Fig. 9 As shown: Fig. 9 A circuit layer 92 is disposed on the insulating substrate 91, and a through hole 912 is provided on the insulating substrate 91. A metal conductor 94 of matching size is disposed in the through hole 912. The upper end of the metal conductor 94 is electrically connected to the corresponding position of the circuit layer, and the lower end serves as an external electrical connection interface of the second functional electrical connection area, which can be flush with the back of the insulating substrate, or maintained in the through hole at a position slightly lower than the opening of the back of the through hole, or extended out of the back of the insulating substrate. It should be understood that Fig. 9 The metal conductor 94 can be made of various metal conductive materials, such as but not limited to copper, aluminum, silver, etc.

[0083] In one form, the conductor is a metal conductive layer attached to the wall of the through hole and extending out of the openings at both ends of the through hole, for example, see Figure 10-1 As shown: Figure 10-1A circuit layer 102 is arranged on the middle insulating substrate 101, a through hole 1012 is opened on the insulating substrate, and a metal conductive layer 104 is arranged on the inner wall of the through hole 1012. The upper end of the metal conductive layer 104 is electrically connected to the corresponding position of the circuit layer, and the lower end serves as an external electrical connection interface of the second functional electrical connection area, which can be flush with the back side of the insulating substrate, or maintained at a position slightly lower than the opening on the back side of the through hole, or extended from the back side of the insulating substrate to form an electrical connection interface in the area near the back side opening of the through hole. Figure 10-1 The electrical connection interface in is an exemplary electrical connection jack. When making an electrical connection, the pin or PIN foot or PIN needle of an external device (such as a chip, a resistor, a capacitor, a connector, etc.) can be inserted into the electrical connection jack to form an electrical connection with the metal conductive layer 104. For example, see Figure 10-2 As shown, the PIN pins of the connector 105 can be inserted into and electrically connected to the metal conductive layer 104 , thereby achieving electrical connection between the two modules in the circuit layer 102 .

[0084] It should be understood that the second functional electrical connection area led out on the back side of the substrate in this embodiment may include a bracket positive electrode connection area and a bracket negative electrode connection area for connecting the LED bracket to an external power supply and at least one of a device connection area for connecting to devices outside the LED bracket (for example, including but not limited to resistors, inductors, capacitors, various switches, chips, etc.), which can be flexibly set according to specific needs.

[0085] See also Figure 11-1 As shown, a circuit layer 112 is disposed on the insulating substrate 111, and a first functional electrical connection area 116 is also disposed on the circuit layer 112 on the front side of the insulating substrate 111. Figure 11-1 There are two first functional electrical connection areas 116, and the specific connection positions of the first functional electrical connection areas 116 and other circuits in the circuit layer can be flexibly determined according to the specific circuit structure. Of course, according to actual needs, the second functional electrical connection area can also be set on the back side of the insulating substrate at the same time, or the second functional electrical connection area can be set only on the back side of the insulating substrate, and the first functional electrical connection area is not set on the front side of the insulating substrate.

[0086] See also Figure 11-2 As shown, in this embodiment, the electrical connection interface in the first functional electrical connection area 116 can be used as a gold finger interface 1161; it should be understood that the specific number and function of the gold fingers in the gold finger interface can be flexibly set according to specific needs. Of course, each electrical connection interface set on the back side of the substrate can also be set as a gold finger interface or a connector interface.

[0087] See also Figure 12-1As shown, a first insulating layer 123 and a circuit layer 122 are arranged on the conductive substrate 121, wherein a through hole 1212 is opened on the conductive substrate 121, a second insulating layer 125 is formed on the hole wall of the through hole 1212, a conductor 124 is arranged in the through hole 1212, the upper end of the conductor 124 passes through the first insulating layer 123 and is electrically connected to the corresponding position on the circuit layer 122, and the lower end of the conductor 124 serves as an external electrical connection interface of the second functional electrical connection area. A first functional electrical connection area 126 is also arranged on the circuit layer 122 at the right end of the conductive substrate 121, that is, in FIG12, functional electrical connection areas are arranged on both the front and back sides of the conductive substrate 121, so as to provide more access points for the LED bracket to the outside, which is more conducive to the flexible use of the LED bracket in various scenes.

[0088] In this embodiment, the electrical connection interface in the first functional electrical connection area 126 may be a welding point formed by directly exposing the circuit substrate layer at the corresponding position. Figure 12-2 As shown, 1261 is a welding point serving as an electrical connection interface; of course, it can also be extended outward to form a connection point similar to a PIN terminal, and the specific form can be flexibly set according to specific application requirements.

[0089] It should be understood that in this embodiment, when the first functional electrical connection area and the second functional electrical connection area are respectively set on the front and back sides of the substrate, the functions corresponding to the first functional electrical connection area and the second functional electrical connection area may be the same or different, or the first functional electrical connection area and the second functional electrical connection area may cooperate to realize one function.

[0090] In this embodiment, in order to improve the reliability, light output efficiency, etc. of the LED bracket, optionally, at least one of a protective layer and a metal plating layer can be provided on the circuit layer provided on the substrate, and the protective layer in this embodiment includes but is not limited to at least one of a protective coating and an insulating protective film; the provision of the metal plating layer in this embodiment can also facilitate wiring when connecting devices.

[0091] For example, various protective coatings can be set on the circuit layer. It should be understood that the protective coating does not cover the welding area on the circuit layer. The protective coating can play a role in protecting the circuit layer, and according to actual needs, it can also play a role in marking the circuit structure on the circuit layer, and / or improving the light extraction efficiency of the LED bracket. For example, the protective coating in this embodiment can be set as a solder mask ink coating, and the solder mask ink coating can include at least one of a white oil layer, a green oil layer and a black oil layer. For example, a white oil layer can be set in some areas, a green oil layer can be set in some areas, or a white oil layer can be set in some areas, a black oil layer can be set in some areas, or only a white oil layer, a green oil layer or a black oil layer can be set, or even multiple layers of ink layers can be set according to needs. The specific selection of which types of ink layers and the specific combination methods can be flexibly set. The setting of the black oil layer can absorb part of the light, and the light finally emitted can be adjusted again. For another example, various insulating protective films can be set on the circuit layer (that is, protected by coating), and the insulating protective film in this embodiment can use an insulating reflective film, such as a reflective flexible film, to improve the light extraction rate of the LED bracket. In this embodiment, the reflective flexible film is not a welding area on the circuit layer. It should be understood that, in one example, the insulating protective layer and the protective coating layer can also be provided in combination, for example, the protective coating layer can be provided on the circuit layer first, and then the insulating protective layer can be provided on the protective coating layer. In this embodiment, a metal plating layer can also be provided directly on the circuit layer, and the metal plating layer can be a single metal layer or a composite metal layer composed of at least two metal layers; for example, when it is a single metal layer, it can be a single silver-plated layer; when it is a composite metal layer, it can be a composite metal layer composed of a silver layer and a gold layer or other metal layers.

[0092] The color of the light emitted by the LED provided in this embodiment and presented to the user can be flexibly set according to actual needs and application scenarios. The color of the light emitted by the LED and presented to the user is determined by the following factors: the color of the light emitted by the LED chip itself, whether the LED includes a luminescence conversion layer, and the color of the luminescence conversion layer when the LED includes a luminescence conversion layer.

[0093] As described above, the number of lamp bead areas on the substrate and the number of LED chips set in each lamp bead area in this embodiment can be flexibly set. And it should be understood that the number of LED chips in each lamp bead area in this embodiment can be the same or different. The peak emission wavelength of the LED chips in each lamp bead area can also be the same or different, that is, the peak emission wavelength of the LED chips set on the substrate and the combination of the peak emission wavelengths can also be flexibly set. For example, the LED chips set on the substrate in this embodiment can include any one of the following chips, or any combination of at least two:

[0094] Blue light chips with peak emission wavelengths between 440nm and 500nm;

[0095] Green light chips with peak emission wavelengths between 510nm and 540nm;

[0096] Yellow light chip with peak emission wavelength between 550nm and 570nm;

[0097] Red light chip with peak emission wavelength greater than 620nm.

[0098] However, it should be understood that the above four chips are merely examples in this embodiment and are not limited to the above four chips.

[0099] In this embodiment, the LED chip arranged on the substrate is one of the four chips exemplified above, and when the number of LED chips arranged on the substrate is at least two, the peak emission wavelengths of the at least two LED chips may be the same (for example, both are blue light chips with a peak emission wavelength of 440nm, 445nm or 450nm, etc.), or different (for example, one part is a blue light chip with a peak emission wavelength of 440nm, 445nm or 450nm, and the other part is a blue light chip with a peak emission wavelength of 455nm, 465nm or 480nm, etc.).

[0100] In this embodiment, when the LED chips arranged on the substrate are two or more of the four chips in the above examples, they may include two, three or four chips, and the specific combination includes but is not limited to any combination of the four chips in the above examples. For example, when two types are included, it can be a blue light chip and a green light chip, or a blue light chip and a red light chip, or a green light chip and a yellow light chip; when three types are included, it can be a blue light chip, a green light chip and a red light chip, or a yellow light chip, a blue light chip and a red light chip, or a blue light chip, a green light chip and a yellow light chip, etc. And according to the above analysis, it can be seen that the peak wavelength of light emission of each chip can also be the same or different. For ease of understanding, this embodiment is described below in conjunction with several specific examples.

[0101] In one example, the LED chips in the lamp bead area are of the same type and have the same peak emission wavelength, for example, a blue LED chip with a peak emission wavelength of 500nm, or a green LED chip with a peak emission wavelength of 530nm.

[0102] In one example, the LED chips in the lamp bead area are provided with a chip and the peak emission wavelengths include at least two LED chips, for example, blue light LED chips with peak emission wavelengths of 450nm and 500nm, or yellow light chips with peak emission wavelengths of 550nm, 560nm and 570nm.

[0103] In another example, two types of LED chips are set in the lamp bead area, and the peak emission wavelength of each chip is the same. For example, red light LED chips and blue light LED chips are used, the peak emission wavelength of the red light LED chips is 650nm, and the peak emission wavelength of the blue light LED chips is 450nm.

[0104] In another example, two types of LED chips are set in the lamp bead area, and the peak emission wavelength of at least one chip is different. For example, yellow light LED chips and green light LED chips are used, the peak emission wavelength of the yellow light LED chips is 560nm, the peak emission wavelength of some green light LED chips is 530nm, and the peak emission wavelength of other green light LED chips is 540nm.

[0105] In another example, three types of LED chips are set in the lamp bead area, and the peak emission wavelength of each chip is the same. For example, blue light LED chip, green light LED chip and red light LED chip are used. The peak emission wavelength of the blue light LED chip is 480nm, the peak emission wavelength of the green light LED chip is 535nm, and the peak emission wavelength of the red light LED chip is 620nm.

[0106] In another example, three types of LED chips are set in the lamp bead area, and the peak emission wavelength of at least one chip is different. For example, blue light LED chips, green light LED chips and red light LED chips are used. The peak emission wavelength of the blue light LED chips is 480nm, the peak emission wavelength of some green light LED chips is 535nm, and the peak emission wavelength of another part of green light LED chips is 540nm, the peak emission wavelength of some red light LED chips is 620nm, and the peak emission wavelength of another part of red light LED chips is 650nm.

[0107] In another example, four types of LED chips are set in the lamp bead area, and the peak emission wavelength of each chip is the same. For example, blue light LED chip, green light LED chip, yellow light LED chip and red light LED chip are used. The peak emission wavelength of the blue light LED chip is 480nm, the peak emission wavelength of the green light LED chip is 536nm, the peak emission wavelength of the yellow light LED chip is 570nm, and the peak emission wavelength of the red light LED chip is 625nm.

[0108] It should be understood that when the LED chips arranged on the substrate include multiple (greater than three) LED chips with different peak emission wavelengths, they may be LED chips with four, five, six, etc. different peak emission wavelengths. For example, in one example, multiple LED chips are arranged in at least one lamp bead area on the substrate, and specifically include the above-mentioned four LED chips with different peak emission wavelength ranges, and specifically assume that 4 LED chips are arranged, namely a blue light LED chip with a peak emission wavelength of 480nm, a green light LED chip with a peak emission wavelength of 540nm, a red light LED chip with a peak emission wavelength of 680nm, and a yellow light LED chip with a peak emission wavelength of 560nm. Optionally, a layer of blue phosphor glue layer, fluorescent film or QD film can be coated on the yellow light LED chip, and the yellow light emitted by the yellow light LED chip can emit white light after passing through the blue phosphor glue layer, fluorescent film or QD film.

[0109] It should be understood that in this embodiment, the type of light emitted by the LED chip itself can be visible light visible to the naked eye, or ultraviolet light or infrared light invisible to the naked eye; when the type of light emitted by the LED chip itself is ultraviolet light or infrared light invisible to the naked eye, a luminescence conversion layer needs to be provided on the LED chip to convert the invisible light to visible light, so that the light emitted by the LED is visible to the user. For example, when the light emitted by the LED chip itself is ultraviolet light, if the LED is to present white light visible to the user, the luminescence conversion layer can be made by mixing red, green, and blue phosphors.

[0110] The LED provided in this embodiment may also include a luminescent conversion layer, a transparent adhesive layer or a diffusion adhesive layer located on the LED chip. When a luminescent conversion layer is provided on the LED chip, the color of the light emitted by the LED and presented to the user is the color of the light emitted by the LED chip, mixed with the color of the fluorescence emitted by the luminescent conversion layer. The luminescent conversion layer has at least the following functions: it is one of the determining factors of the color of the light emitted by the LED and presented to the user, and it can also protect the LED chip, such as dustproof, waterproof, oilproof, etc. When a transparent adhesive layer is provided on the LED chip, the transparent adhesive layer can protect the LED chip, such as dustproof, waterproof, oilproof, etc. When a diffusion adhesive layer is provided on the LED chip, the diffusion adhesive layer can be made of inorganic light diffusers and organic light diffusers; when a diffusion adhesive layer is provided on the LED chip, the scattering and transmission of light can be increased, and while shielding the light source of the LED chip and the dazzling light source, the entire resin can emit a softer, more beautiful, and elegant light, achieving a comfortable effect of light-transmitting and opaque. For ease of understanding, several examples of combinations of LED chips and light conversion layers are used for illustration below.

[0111] As can be seen from the above analysis, the LED chip in the lamp bead area in this embodiment can be any one of the four chips in the above examples or a combination of at least two. Therefore, this embodiment uses any one of the four chips in the above examples or a combination of at least two, combined with the luminescent conversion layer to produce a preset mixed color light as an example for explanation. And it should be understood that the preset mixed color light in this embodiment can be flexibly set according to specific needs, for example, it can be white light, or magenta light, cyan light, blue-white light, etc. The following is explained using white light as an example.

[0112] For example, when the LED chip in the lamp bead area is any one of the four chips exemplified above, if it is a blue light chip (for example, the peak wavelength of the light emission is 450nm), the luminescence conversion layer at this time can adopt a yellow phosphor glue layer, a yellow fluorescent film or a yellow quantum dot QD film; if it is a green light chip, the luminescence conversion layer at this time can adopt a phosphor glue layer made by mixing blue phosphor and red phosphor, a fluorescent film or a QD film made by mixing blue quantum dots and red quantum dots; if it is a yellow light chip, the luminescence conversion layer at this time can adopt a phosphor glue layer made of blue phosphor, a fluorescent film or a QD film made of blue quantum dots; if it is a red light chip, the luminescence conversion layer at this time can adopt a phosphor glue layer made of blue phosphor and green phosphor, a fluorescent film or a QD film made of blue quantum dots and green quantum dots.

[0113] For another example, when the LED chip in the lamp bead area is a combination of any two of the four chips in the above examples, if it is a combination of a blue light chip and a green light chip, the luminescence conversion layer at this time can be a phosphor glue layer made of red phosphor, a fluorescent film, or a QD film made of red quantum dots; if it is a combination of a blue light chip and a red light chip, the luminescence conversion layer at this time can be a phosphor glue layer made of green phosphor, a fluorescent film, or a QD film made of green quantum dots; if it is a combination of a blue light chip and a yellow light chip, the luminescence conversion layer at this time can be a phosphor glue layer made of a mixture of blue phosphor, green phosphor and red phosphor, a fluorescent film, or a QD film made of a mixture of blue quantum dots, green quantum dots and red quantum dots, and so on.

[0114] For another example, when the LED chip in the lamp bead area is a combination of any three of the four chips in the above examples, if it is a combination of a blue light chip, a green light chip and a red light chip, the luminescence conversion layer at this time can be a phosphor glue layer made of a mixture of blue phosphor, green phosphor and red phosphor, a fluorescent film or a QD film made of a mixture of blue quantum dots, green quantum dots and red quantum dots; if it is a combination of a red light chip, a green light chip and a yellow light chip, the luminescence conversion layer at this time can be a phosphor glue layer made of blue phosphor, a fluorescent film or a QD film made of blue quantum dots. Of course, in some examples, mixed color light can also be obtained directly by mixing the colors of the chips themselves. For example, white light can be obtained directly by combining a blue light chip, a green light chip and a red light chip without using a luminescence conversion layer. The specific settings can be flexibly determined according to the application scenario.

[0115] For another example, when the LED chip in the lamp bead area is a combination of the four chips in the above examples, the luminescent conversion layer at this time can be a phosphor glue layer made of blue phosphor, a fluorescent film or a QD film made of blue quantum dots; of course, it can also be directly a white light obtained by mixing the white light emitted by the blue light chip, the green light chip and the red light chip themselves with the white light emitted by the white light unit additionally arranged in the lamp bead area to obtain white light. The white light unit can be obtained by combining at least one LED chip with the luminescent conversion layer, and can be obtained by but not limited to any of the above methods.

[0116] In the present embodiment, the phosphor glue layer and the phosphor film can be made of inorganic phosphors, which can be inorganic phosphors doped with rare earth elements, wherein the inorganic phosphors are at least one of silicate, aluminate, phosphate, nitride, and fluoride phosphors. The phosphor glue layer can be formed by uniformly mixing the phosphor and glue and then curing them, and the glue can be a photocurable colloid, a photosensitive glue, etc. The production of the fluorescent film can be to uniformly mix the phosphor and glue to form a phosphor colloid, and then use a printing process to uniformly print the phosphor colloid on a supporting mold, and finally remove it from the supporting mold after heating and drying or drying at room temperature. It should be understood that the above is only an example of a method for producing the phosphor glue layer and the fluorescent film, and the production of the phosphor glue layer and the fluorescent film of this embodiment is not limited to the above method.

[0117] The quantum dot QD film can be made of quantum dot phosphors; the quantum dot phosphors are at least one of BaS, AgInS2, NaCl, Fe2O3, In2O3, InAs, InN, InP, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaN, GaS, GaSe, InGaAs, MgSe, MgS, MgTe, PbS, PbSe, PbTe, Cd(SxSe1-x), BaTiO3, PbZrO3, CsPbCl3, CsPbBr3, and CsPbI3. The quantum dot QD film can be formed by uniformly mixing the quantum dot phosphors and glue and then curing them. The glue can be a photocurable colloid, a photosensitive glue, etc. It should be understood that the above is only an example of a method for making a quantum dot QD film, and the preparation of the quantum dot QD film of this embodiment is not limited to the above method.

[0118] The luminescent conversion layer, transparent adhesive layer or diffusion adhesive layer provided in this embodiment can be arranged on the LED chip by dispensing, molding or spraying. For example, when the luminescent conversion layer of the LED adopts a fluorescent powder adhesive layer or a fluorescent film, it can be formed by applying a packaging glue mixed with fluorescent powder to the luminescent surface of the LED chip through a dispensing process; the fluorescent powder and glue can also be mixed in advance, and then covered on the luminescent surface of the LED chip through a molding process, and it does not need to be mixed in the packaging glue and applied on the packaging surface of the LED chip by dispensing. Therefore, it is possible to ensure that the fluorescent powder is evenly dispersed in the fluorescent powder adhesive layer or the fluorescent film through sufficient time and process, thereby improving the product quality rate of the LED chip.

[0119] For example, when the light-emitting conversion layer of the LED adopts quantum dot QD film, the packaging glue mixed with quantum dot phosphor can be applied to the light-emitting surface of the LED chip through a dispensing process; or the quantum dot phosphor and glue can be evenly mixed in advance and then covered on the light-emitting surface of the LED chip through a molding process. It does not need to be mixed in the packaging glue and coated on the packaging surface of the LED chip through dispensing. Therefore, sufficient time and process can be used to ensure that the quantum dot phosphor is evenly dispersed in the quantum dot QD film, thereby improving the product quality rate of the LED chip.

[0120] Embodiment 2:

[0121] For ease of understanding, this embodiment is described by taking a substrate being a planar substrate as an example.

[0122] In this embodiment, the LED chip may be a front-mounted LED chip, and the front side of the substrate may have at least one die-bonding area exposed outside the circuit layer for placing the LED chip, or the circuit layer may have at least one chip placement area for placing the LED chip, or, when there is an insulating layer between the circuit layer and the substrate, the insulating layer may have at least one chip placement area for placing the LED chip;

[0123] The LED chip in this embodiment may also be a flip-chip LED chip, in which case the circuit layer has at least one chip placement area for placing the LED chip, and the positive pin welding area and the negative pin welding area corresponding to the positive pin and the negative pin of the LED chip are located in the chip placement area;

[0124] The lamp bead area includes at least one die-bonding area or a chip placement area.

[0125] The LED provided in this embodiment may have only one LED chip or multiple LED chips, and the specific number can be flexibly set according to the actual situation. One LED chip may have a corresponding solid crystal area or chip placement area. The number of solid crystal areas or chip placement areas in a lamp bead area can be flexibly set according to the actual situation. The number of lamp bead areas can also be flexibly set according to the actual situation.

[0126] In this embodiment, when the LED chip is a front-mounted LED chip, the front side of the substrate may have at least one crystal-bonding area exposed outside the circuit layer for placing the LED chip, and the lamp bead area includes at least one crystal-bonding area. For example, there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area or multiple LED chips are located in multiple lamp bead areas, and each LED chip corresponds to a crystal-bonding area.

[0127] In this embodiment, when the LED chip is a normal-mounted LED chip, the circuit layer may have at least one chip placement area for placing the LED chip, and the lamp bead area includes at least one chip placement area. For example, there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area or multiple LED chips are located in multiple lamp bead areas, and each LED chip corresponds to a chip placement area.

[0128] In this embodiment, when the LED chip is a normal-mounted LED chip and there is an insulating layer between the circuit layer and the substrate, there is at least one chip placement area on the insulating layer for placing the LED chip, and the lamp bead area includes at least one chip placement area. For example, there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area or the multiple LED chips are located in multiple lamp bead areas, and each LED chip corresponds to a chip placement area.

[0129] In this embodiment, when the LED chip is a flip-chip LED chip, the circuit layer has at least one chip placement area for placing the LED chip, and the positive pin welding area and the negative pin welding area corresponding to the positive pin and the negative pin of the LED chip are located in the chip placement area; the lamp bead area includes at least one chip placement area. For example, there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area or the multiple LED chips are located in multiple lamp bead areas, and each LED chip corresponds to a chip placement area.

[0130] The following provides specific examples for illustration, for example, see Figure 13-1 , Figure 13-1 This is a schematic diagram of a structure of a conductive flat substrate provided in this embodiment, and the LED chip is a front-mounted LED chip. Figure 13-1 In the figure, the front side of the substrate 131 is a plane, the substrate 131 is a copper substrate, and the plurality of LED chips 132 are all upright chips, which are electrically connected by metal wires 134; a circuit layer 133 is arranged on the front side of the copper substrate, and the circuit layer 133 and the copper substrate are insulated and isolated by an insulating layer 135, and the positions of the circuit layer 133 and the insulating layer 135 overlap. The LED chip 132 is arranged between two adjacent circuit layers 133 and directly arranged on the solid crystal area 136 of the copper substrate. The circuit layer 133 includes a positive pin welding area 1331 and a negative pin welding area 1332 respectively connected to the positive pin 1321 and the negative pin 1322 of the LED chip 132. The circuit layer 133 also includes a circuit for connecting the LED chip 132 in the lamp bead area on the substrate 131 to the connection points of other lamp beads and / or other devices on the substrate 131; the positive pin 1321 and the negative pin 1322 of each LED chip 132 are respectively connected to the corresponding positive pin welding area 1331 and the negative pin welding area 1332 on the circuit layer 133, and the same LED chip 132 is placed between two adjacent circuit layers 133. For example, for a certain LED chip 132, its positive pin 1321 is connected to the positive pin welding area 1331 of one of the circuit layers 133, and its negative pin 1322 is connected to the negative pin welding area 1332 of another circuit layer 133, and the two circuit layers 133 are adjacent.

[0131] See also Figure 13-2 , Figure 13-2 A top view of an LED structure provided in this embodiment, which has a conductive flat substrate, divides four longitudinal die-bonding areas into a lamp bead area, and has an LED chip mounted on the substrate; Figure 13-2The provided substrate 131 includes four lamp bead areas 137, each lamp bead area 137 has four solid crystal areas, and each LED chip 132 corresponds to a solid crystal area; the circuit layer 133 includes a positive pin welding area 1331 and a negative pin welding area 1332 respectively corresponding to the positive pin 1321 and the negative pin 1322 of the LED chip 132 to be placed in each lamp bead area 137, and a circuit 138 for electrically connecting at least two lamp bead areas 137.

[0132] It should be understood that the division of the lamp bead area can be flexibly divided according to the actual scene, for example, in addition to Figure 13-2 The longitudinal division method provided can also be a transverse division method, or a method of dividing a solid crystal area into a lamp bead area, see Figure 13-3 , Figure 13-3 A top view of an LED structure provided in this embodiment having a conductive flat substrate, a die-bonding area divided into a lamp bead area, and an LED chip mounted on the substrate. Figure 13-3 and Figure 13-2 The difference is that the only difference is the way the lamp beads are divided. Figure 13-2 The way to divide the lamp bead area is to divide the four vertical solid crystal areas into one lamp bead area. Figure 13-3 The lamp bead area is divided into a lamp bead area by dividing a solid crystal area into a lamp bead area.

[0133] Based on the above conditions, four different examples are given below:

[0134] Example 1: The LED includes a plurality of LED chips 132, and the plurality of LED chips 132 are blue light chips with a peak emission wavelength of 450nm. A dispensing process is used to coat the light-emitting surfaces of the plurality of LED chips 132 with a packaging glue mixed with a certain amount of red inorganic phosphor and green inorganic phosphor to form a fluorescent glue layer. Figure 13-4 , Figure 13-4 This is a schematic diagram of a structure of a conductive flat substrate, a fluorescent adhesive layer, and a front-mounted LED chip provided in this embodiment. Figure 13-4 is Figure 13-1 A fluorescent glue layer 139 is added on the basis of the LED; when the LED is powered on, the LED chip 132 emits blue light, which is mixed with the red and green fluorescence of the fluorescent glue layer 139, and then white light is emitted from the LED to be presented to the user.

[0135] Example 2: The LED includes multiple LED chips 132, and the multiple LED chips 132 include a blue light chip with a peak light emission wavelength of 450nm and a green light chip with a peak light emission wavelength of 540nm. The red inorganic phosphor and glue are first evenly mixed to form a phosphor colloid, and then the phosphor colloid is covered on the light-emitting surface of the LED chip through a molding process to form a fluorescent film. After the LED is powered on, the blue light chip emits blue light and the green light chip emits green light. After mixing with the red fluorescence of the fluorescent film, white light is emitted from the LED to be presented to the user.

[0136] Example three, the LED includes multiple LED chips 132, and the multiple LED chips 132 include a blue light LED chip with a peak emission wavelength of 450nm, a green light LED chip with a peak emission wavelength of 540nm, and a red light LED chip with a peak emission wavelength of 700nm. A certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor are first evenly mixed, and then evenly mixed with glue to form a quantum dot QD film, and then the quantum dot QD film is covered on the light-emitting surface of the LED chip 132 through a molding process; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then after mixing with the red light, blue light and green light of the quantum dot QD film, white light is emitted from the LED and presented to the user.

[0137] Example 4: The LED includes multiple LED chips 132, including a blue light LED chip with a peak light emission wavelength of 450nm, a green light LED chip with a peak light emission wavelength of 540nm, and a red light LED chip with a peak light emission wavelength of 700nm. A transparent adhesive layer is used to cover the light-emitting surface of the LED chip 132; when the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. After the blue light, green light, and red light are mixed, white light is emitted from the LED and presented to the user.

[0138] The following example illustrates the case where the LED chips arranged in the lamp bead area include three chips with different emission peak wavelength ranges, the LED chips include a blue LED chip with an emission peak wavelength of 440nm, a green LED chip with an emission peak wavelength of 520nm, and a red LED chip with an emission peak wavelength of 700nm. For example, see Figure 13-5 , Figure 13-5 A schematic diagram of an LED chip provided in this embodiment includes a red LED chip, a blue LED chip and a green LED chip, Figure 13-5In the embodiment, four lamp bead areas 137 are included, each of which includes three LED chips 132. The three LED chips 132 are respectively a red LED chip 132 (indicated by the letter R in the figure), a green LED chip 132 (indicated by the letter G in the figure), and a blue LED chip 132 (indicated by the letter B in the figure). Figure 13-5 and Figure 13-2 The difference.

[0139] The following is an example of another case where the LED chips arranged in the lamp bead area include three chips with different emission peak wavelength ranges, the LED chips include a blue light LED chip with an emission peak wavelength of 440nm, a green light LED chip with an emission peak wavelength of 520nm, and a red light LED chip with an emission peak wavelength of 700nm, see Figure 13-6 , Figure 13-6 A schematic diagram of an LED chip provided in this embodiment includes a red LED chip, a blue LED chip, a green LED chip and an LED chip unit emitting white light, Figure 13-6 In the embodiment, four lamp bead areas 137 are included, each of which includes four LED chips 132. The four LED chips 132 include a red LED chip 132 (indicated by the letter R in the figure), a green LED chip 132 (indicated by the letter G in the figure), and two blue LED chips 132 (indicated by the letter B in the figure). The LED chip unit emitting white light is formed by coating a fluorescent glue layer obtained by mixing red phosphor and green phosphor on a blue LED chip 132. This is also Figure 13-6 and Figure 13-5 The difference.

[0140] See also Fig.14 , Fig.14 This is a schematic diagram of an LED structure provided in this embodiment, which has an insulating flat substrate and an LED chip mounted on a circuit layer. Fig.14 In the figure, the front side of the LED substrate 141 is a plane, the substrate 141 is an insulating substrate, and the plurality of LED chips 142 are all upright chips, which are electrically connected through metal wires 144; a circuit layer 143 is arranged on the front side of the insulating substrate 141, and since the substrate 141 itself is already insulated, the circuit layer 143 is directly arranged on the insulating substrate 141, and there is no need to arrange an additional insulating layer between the substrate 141 and the circuit layer 143;

[0141] The circuit layer 143 includes a positive pin welding area 1431 and a negative pin welding area 1432 respectively connected to the positive pin 1421 and the negative pin 1422 of the LED chip 142. The circuit layer 143 also includes a circuit for connecting the LED chip 142 in the lamp bead area on the substrate 141 to the connection points of other lamp beads and / or other devices on the substrate 141; the positive pin 1421 and the negative pin 1422 of each LED chip 142 are respectively connected to the corresponding positive pin welding area 1431 and the negative pin welding area 1432 on the circuit layer 143; the same LED chip 142 is placed on two adjacent circuit layers 143. For example, for a certain LED chip 142, its positive pin 1421 is connected to the positive pin welding area 1431 of one of the circuit layers 143, and its negative pin 1422 is connected to the negative pin welding area 1432 of another circuit layer 143. The two circuit layers 143 are adjacent, and the two adjacent circuit layers 143 are insulated and isolated.

[0142] Based on the above conditions, four different examples are given below:

[0143] Example 1: The LED includes multiple LED chips 142, all of which are blue light LED chips with a peak emission wavelength of 450nm. A dispensing process is used to coat the light-emitting surfaces of the multiple LED chips 142 with packaging glue mixed with a certain amount of red inorganic phosphor and green inorganic phosphor to form a fluorescent glue layer; after the LED is powered on, the LED chip 142 emits blue light, which is mixed with the red fluorescence and green fluorescence of the fluorescent glue layer, and then white light is emitted from the LED to be presented to the user.

[0144] Example 2: The LED includes multiple LED chips 142, and the multiple LED chips 142 include a blue light LED chip with a peak emission wavelength of 450nm, and a green light LED chip with a peak emission wavelength of 540nm. The red inorganic phosphor and glue are first evenly mixed to form a phosphor colloid, and then the phosphor colloid is covered on the light-emitting surface of the LED chip through a molding process to form a fluorescent film. After the LED is powered on, the blue light chip emits blue light and the green light chip emits green light. After mixing with the red fluorescence of the fluorescent film, white light is emitted from the LED to be presented to the user.

[0145] Example three, the LED includes multiple LED chips 142, and the multiple LED chips 142 include a blue light LED chip with a peak emission wavelength of 450nm, a green light LED chip with a peak emission wavelength of 540nm, and a red light LED chip with a peak emission wavelength of 700nm. A certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor are first evenly mixed, and then evenly mixed with glue to form a quantum dot QD film, and then the quantum dot QD film is covered on the light-emitting surface of the LED chip 142 through a molding process; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then after mixing with the red light, blue light and green light of the quantum dot QD film, white light is emitted from the LED and presented to the user.

[0146] Example 4, the LED includes multiple LED chips 142, the multiple LED chips 142 include a blue light LED chip with a peak light emission wavelength of 450nm, a green light LED chip with a peak light emission wavelength of 540nm, and a red light LED chip with a peak light emission wavelength of 700nm, and a transparent adhesive layer is used to cover the light-emitting surface of the LED chip 142; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. After the blue light, green light, and red light are mixed, white light is emitted from the LED and presented to the user.

[0147] See also Fig.15 , Fig.15 This is a schematic diagram of an LED structure provided in this embodiment, which has a conductive flat substrate and an LED chip mounted on an insulating layer. Fig.15In the figure, the front side of the substrate 151 is a plane, and the plurality of LED chips 152 are all upright chips, which are electrically connected through metal wires 154; an insulating layer 155 is arranged on the front side of the substrate 151, and the insulating layer 155 overlaps with the substrate 151; a circuit layer 153 is arranged on the insulating layer 155, and the circuit layer 153 and the iron substrate 151 are insulated and isolated by the insulating layer 155; the LED chip 152 is arranged between two adjacent circuit layers 153, and is directly arranged on the chip placement area 156 on the insulating layer 155. The circuit layer 153 includes a positive pin welding area 1531 and a negative pin welding area 1532 respectively connected to the positive pin 1521 and the negative pin 1522 of the LED chip 152. The circuit layer 153 also includes a circuit for connecting the LED chip 152 in the lamp bead area on the substrate 151 with the connection points of other lamp beads and / or other devices on the substrate 151; the positive pin 1521 and the negative pin 1522 of each LED chip 152 are respectively connected to the corresponding positive pin welding area 1531 and the negative pin welding area 1532 on the circuit layer 153; the same LED chip 152 is placed between two adjacent circuit layers 153. For example, for a certain LED chip 152, its positive pin 1521 is connected to the positive pin welding area 1531 of one of the circuit layers 153, and its negative pin 1522 is connected to the negative pin welding area 1532 of another circuit layer 153, and the two circuit layers 153 are adjacent.

[0148] Based on the above conditions, four different examples are given below:

[0149] Example 1: The LED includes multiple LED chips 152, all of which are blue light LED chips with a peak emission wavelength of 480nm. A dispensing process is used to coat the light-emitting surfaces of the multiple LED chips 152 with packaging glue mixed with a certain amount of red inorganic phosphor and green inorganic phosphor to form a fluorescent glue layer; after the LED is powered on, the LED chip 152 emits blue light, which is mixed with the red fluorescence and green fluorescence of the fluorescent glue layer, and then white light is emitted from the LED to be presented to the user.

[0150] Example 2: The LED includes multiple LED chips 152, and the multiple LED chips 152 include a blue light LED chip with a peak emission wavelength of 480nm and a green light LED chip with a peak emission wavelength of 510nm. The red inorganic phosphor and glue are first evenly mixed to form a phosphor colloid, and then the phosphor colloid is covered on the light-emitting surface of the LED chip 152 through a molding process to form a fluorescent film. After the LED is powered on, the blue light chip emits blue light and the green light chip emits green light. After mixing with the red fluorescence of the fluorescent film, white light is emitted from the LED to be presented to the user.

[0151] Example three, the LED includes multiple LED chips 152, and the multiple LED chips 152 include a blue light LED chip with a peak emission wavelength of 480nm, a green light LED chip with a peak emission wavelength of 510nm, and a red light LED chip with a peak emission wavelength of 680nm. A certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor are first evenly mixed, and then evenly mixed with glue to form a quantum dot QD film, and then the quantum dot QD film is covered on the light-emitting surface of the LED chip 152 through a molding process; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then after mixing with the red light, blue light and green light of the quantum dot QD film, white light is emitted from the LED and presented to the user.

[0152] Example 4: The LED includes multiple LED chips 152, including a blue light LED chip with a peak light emission wavelength of 480nm, a green light LED chip with a peak light emission wavelength of 510nm, and a red light LED chip with a peak light emission wavelength of 680nm. A transparent adhesive layer is used to cover the light-emitting surface of the LED chip 152; when the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. After the blue light, green light, and red light are mixed, white light is emitted from the LED and presented to the user.

[0153] See also Fig.16 , Fig.16 This is a schematic diagram of an LED structure with a conductive flat substrate and a flip-chip LED chip provided in this embodiment. Fig.16In the figure, the front of the LED substrate 161 is a plane, the material of the substrate 161 is an iron substrate, and the multiple LED chips 162 are flip chips. The flip chip means that the LED chip 162 is electrically connected to the circuit layer 163 on the substrate 161 through the bottom electrode; an insulating layer 164 is arranged on the front of the iron substrate 161, the insulating layer 164 overlaps with the substrate 161, and the insulating layer 164 and the iron substrate 161 have the same area size, and a circuit layer 163 is arranged on the insulating layer 164, and the circuit layer 163 and the iron substrate 161 are insulated and isolated by the insulating layer 164; the circuit layer 163 includes a positive pin welding area 1631 and a negative pin welding area 1632 respectively connected to the positive pin 1621 and the negative pin 1622 of the LED chip 162, and the circuit layer 163 also includes a circuit layer 163 for connecting the substrate 161 to the positive pin 1621 and the negative pin 1622 of the LED chip 162. 1 is a circuit that connects the LED chips 162 in the lamp bead area on the substrate 161 to the connection points of other lamp beads and / or other devices on the substrate 161; the positive pin 1621 and the negative pin 1622 of each LED chip 162 are respectively connected to the corresponding positive pin welding area 1631 and the negative pin welding area 1632 on the circuit layer 163; the same LED chip 162 is placed on two adjacent circuit layers 163, for example, for a certain LED chip 162, its positive pin is connected to the positive pin welding area 1631 of one of the circuit layers 163 of 1621, and its negative pin 1622 is connected to the negative pin welding area 1632 of the other circuit layer, the two circuit layers 163 are adjacent, and the two adjacent circuit layers 163 are insulated and isolated; the LED chips 162 are electrically connected through the chip connection circuit.

[0154] Based on the above conditions, four different examples are given below:

[0155] Example 1: The LED includes multiple LED chips 162, all of which are blue light LED chips with a peak emission wavelength of 490nm. A dispensing process is used to coat the light-emitting surfaces of the multiple LED chips 162 with packaging glue mixed with a certain amount of red inorganic phosphor and green inorganic phosphor to form a fluorescent glue layer. After the LED is powered on, the LED chip 162 emits blue light, which is mixed with the red fluorescence and green fluorescence of the fluorescent glue layer, and then white light is emitted from the LED to be presented to the user.

[0156] Example 2: The LED includes multiple LED chips 162, and the multiple LED chips 162 include a blue light LED chip with a peak emission wavelength of 490nm and a green light LED chip with a peak emission wavelength of 510nm. The red inorganic phosphor and glue are first evenly mixed to form a phosphor colloid, and then the phosphor colloid is covered on the light-emitting surface of the LED chip 162 through a molding process to form a fluorescent film. After the LED is powered on, the blue light chip emits blue light and the green light chip emits green light. After mixing with the red fluorescence of the fluorescent film, white light is emitted from the LED to be presented to the user.

[0157] Example three, the LED includes multiple LED chips 162, and the multiple LED chips 162 include a blue light LED chip with a peak emission wavelength of 490nm, a green light LED chip with a peak emission wavelength of 510nm, and a red light LED chip with a peak emission wavelength of 700nm. A certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor are first evenly mixed, and then evenly mixed with glue to form a quantum dot QD film, and then the quantum dot QD film is covered on the light-emitting surface of the LED chip 162 through a molding process; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then after mixing with the red light, blue light and green light of the quantum dot QD film, white light is emitted from the LED and presented to the user.

[0158] Example 4, the LED includes multiple LED chips 162, and the multiple LED chips 162 include a blue light LED chip with a peak light emission wavelength of 490nm, a green light LED chip with a peak light emission wavelength of 510nm, and a red light LED chip with a peak light emission wavelength of 700nm. A transparent adhesive layer is used to cover the light-emitting surface of the LED chip 162; when the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. After the blue light, green light, and red light are mixed, white light is emitted from the LED and presented to the user.

[0159] Embodiment 3

[0160] This embodiment also provides a light-emitting device, which includes the LED illustrated in the above embodiment 1 or embodiment 2. The light-emitting device in this embodiment can be a lighting device, a light signal indicating device, a fill light device or a backlight device. When it is a lighting device, it can be a lighting device used in various fields, such as table lamps, fluorescent lamps, ceiling lamps, downlights, street lamps, projection lamps, etc. in daily life, and high beams, low beams, atmosphere lamps, etc. in cars, and surgical lamps, low electromagnetic lighting lamps, and lighting lamps for various medical instruments in medicine, and various colored lights, landscape lighting lamps, advertising lamps, etc. in the field of decoration lighting; when it is a light signal indicating device, it can be a light signal indicating device used in various fields, such as signal indicator lights in the field of traffic, and various signal status indicator lights on communication equipment in the field of communication; when it is a fill light device, it can be a fill light in the field of photography, such as a flash light, a fill light, and it can also be a plant fill light for plant fill light in the field of agriculture; when it is a backlight device, it can be a backlight module used in various backlight fields, such as a display, a television, a mobile terminal such as a mobile phone, an advertising machine, and other equipment.

[0161] It should be understood that the above applications are merely several applications exemplified in this embodiment, and it should be understood that the application of LEDs is not limited to the several fields exemplified above.

[0162] The above contents are further detailed descriptions of the embodiments of the present invention in combination with specific implementation methods, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the scope of protection of the present invention.

Claims

1. An LED, characterized in that: It includes a substrate with a flat front, a circuit layer located on the front of the substrate and insulated from the substrate, and at least one LED chip. A lamp bead area is provided on the front of the substrate, and the LED chip is arranged in the lamp bead area. The circuit layer includes a circuit for connecting the LED chip in the lamp bead area on the substrate with connection points of other lamp beads and / or other devices on the substrate. A functional electrical connection area is provided on the substrate, which is insulated from the substrate itself and electrically connected to the circuit layer. The functional electrical connection area includes a bracket positive electrode connection area and a bracket negative electrode connection area connected to an external power supply, and at least one of the device connection areas for connecting to devices outside the LED bracket.

2. The LED according to claim 1, characterized in that The peak wavelengths of light emission of the LED chips in the lamp bead area are the same.

3. The LED according to claim 1, characterized in that The LED chips arranged in the lamp bead area include at least two LED chips with different peak emission wavelengths.

4. The LED according to claim 2 or 3, characterized in that: It also includes a light-emitting conversion layer, a transparent adhesive layer or a diffusion adhesive layer located on the LED chip.

5. The LED according to claim 4, wherein the peak wavelengths of the light emission of the LED chips in the lamp bead region are the same, and when the LED comprises a light emission conversion layer, the light emission conversion layer is a phosphor glue layer, a fluorescent film or a quantum dot QD film; The LED chips arranged in the lamp bead area include at least two LED chips with at least two different peak light-emitting wavelengths, and when the LED includes a light-emitting conversion layer, the LED chips arranged in the lamp bead area include chips with two different peak light-emitting wavelengths or chips with three different peak light-emitting wavelengths or chips with multiple different peak light-emitting wavelengths, and the light-emitting conversion layer includes a phosphor glue layer, a fluorescent film or a QD film.

6. The LED according to claim 5, characterized in that The LED chips in the lamp bead area include any one or a combination of at least two of the following chips: Blue LED chips with a peak emission wavelength of 440 nm to 500 nm; Green LED chips with a peak emission wavelength of 510 nm to 540 nm; Yellow LED chips with a peak emission wavelength of 550 nm to 570 nm; Red LED chips with a peak emission wavelength of 620 nm or more; The luminescence conversion layer is a luminescence conversion layer that converts the light emitted by the LED chip into preset mixed color light.

7. The LED according to claim 6, characterized in that The preset mixed color light includes white light.

8. The LED according to claim 4, characterized in that The luminescence conversion layer, transparent adhesive layer or diffusion adhesive layer is arranged on the LED chip by dispensing, molding or spraying.

9. The LED according to any one of claims 1 to 3, characterized in that: The LED chip is a front-mounted LED chip, the front surface of the substrate has at least one die-bonding area exposed outside the circuit layer for placing the LED chip, or the circuit layer has at least one chip placement area for placing the LED chip, or, when there is an insulating layer between the circuit layer and the substrate, the insulating layer has at least one chip placement area for placing the LED chip; or, The LED chip is a flip-chip LED chip, the circuit layer has at least one chip placement area for placing the LED chip, and the positive electrode pin welding area and the negative electrode pin welding area are located in the chip placement area; The lamp bead area includes at least one of the die-bonding areas or chip placement areas.

10. The LED according to any one of claims 1 to 3, characterized in that: The front side of the substrate is provided with a first functional electrical connection area which is insulated from the substrate itself and electrically connected to the circuit layer, and / or the back side of the substrate is provided with a second functional electrical connection area which is insulated from the substrate and electrically connected to the circuit layer.

11. The LED according to any one of claims 1 to 3, characterized in that: The circuit layer is also provided with at least one of a protective coating, an insulating protective film and a metal plating layer; the protective coating includes a solder resist ink coating, the insulating protective film includes an insulating reflective film, and the metal plating layer is a single metal layer or a composite metal layer composed of at least two metal layers.

12. The LED according to any one of claims 1 to 3, characterized in that: The substrate includes at least two lamp bead areas, and the circuit layer includes a positive pin welding area and a negative pin welding area corresponding to the positive pin and negative pin of the LED chip to be placed in each lamp bead area, and a circuit for electrically connecting the at least two lamp bead areas.

13. The LED according to any one of claims 1 to 3, characterized in that: At least two LED chips are arranged in at least one of the lamp bead areas, and the circuit layer also includes a chip connection circuit for realizing electrical connection between the LED chips in the lamp bead area; the at least two LED chips are connected via the chip connection circuit.

14. The LED according to any one of claims 1 to 3, characterized in that: The substrate has a lamp bead area, and the circuit layer includes a positive pin welding area and a negative pin welding area corresponding to the positive pin and negative pin of the LED chip to be placed in the lamp bead area respectively; the lamp bead area is used to place one LED chip or at least two LED chips.

15. A light emitting device, characterized in that: It comprises the LED as described in any one of claims 1 to 14, wherein the light-emitting device is a lighting device, a light signal indicating device, a fill light device or a backlight device.

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