A new power MOS module structure that is easy to expand

By designing a new power MOS module structure that is easy to expand, integrating multiple parallel rows of MOS tubes and simplifying wiring, it solves the problems of low integration and easy damage of existing power MOS modules, and achieves higher integration and reliability , suitable for high-power electrical appliances.

CN110676235BActive Publication Date: 2025-02-07CHENGDU SCILICON ELECTRIC CO LTD
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Patent Information

Application Number
CN201911022020.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2019-10-25
Publication Date
2025-02-07
Estimated Expiration
2039-10-25

AI Technical Summary

Technical Problem

The existing power MOS modules have low integration, small output power, low module utilization, complex structure, resulting in wiring problems and complex electrical connections, which can easily damage the devices and affect the normal operation of the circuit.

Method used

A new power MOS module structure is designed for easy expansion, using double-sided copper-clad DBC boards, integrating multiple parallel rows of MOS tubes, and the drain input and source output of each group of MOS modules share the main. Terminals, simplify wiring and reduce the spike effect of voltage and current by separating the source output circuit and control terminal.

Benefits of technology

It improves the integration and reliability of power MOS modules, reduces the impact of parasitic inductors and capacitances, avoids device burnout, simplifies structure and wiring, and is suitable for high-power electrical appliances.

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Abstract

The invention discloses a novel power MOS module structure that is easy to expand, including a DBC board covered with copper foil on both sides, two groups of power MOS modules are also arranged on the DBC board, each group of power MOS modules integrates at least two MOS tubes connected in parallel, the MOS tube source of each group of power MOS modules is commonly connected to a source output copper foil and a source control copper foil on a DBC board, the drain is connected to the drain input copper foil on the DBC board, and a control terminal is also led out on the drain input copper foil, the gate is connected to the gate control copper foil, and the drain input copper foil and the source output copper foil of each group of power MOS modules are also welded with main terminals. The invention has a compact layout, high integration, small size, and effectively reduces the impact of voltage and current spikes on the entire circuit to prevent device burnout.
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Description

Technical Field

[0001] The present invention relates to the field of power modules, and in particular to a novel power MOS module structure which is easy to expand. Background Art

[0002] In the power electronic module technology, DBC board is mainly used as a carrier of various chips such as IGBT chip, Diode chip, resistor, SiC chip, etc. The DBC board completes the connection of the chip part connection pole or connection surface through the copper layer on the surface, and its function is similar to that of PCB board. With the development of electronic power technology, MOS tubes are more and more widely used for their advantages such as good high-frequency performance, low switching loss, high output impedance, and low driving power. The power MOS module is a MOS tube that is encapsulated into a module according to a certain functional combination. When using the power MOS module, it usually needs to be used with other external devices. The existing power module has low integration, low output power, low module utilization, many input and output terminals, complex structure, and large production volume of the power module. Due to the wiring problem of the power MOS module on the DBC board, the complex external electrical connection generates large parasitic capacitance and inductance in the module. During the shutdown and startup process of the power MOS module, the MOS tube gate will generate voltage spike pulses, which will damage the device. The power MOS module is easy to burn out, affecting the normal operation of the entire circuit. Summary of the invention

[0003] The purpose of the present invention is to propose a new power MOS module structure that is easy to expand and solve the problems in the above-mentioned background technology.

[0004] The technical solution adopted by the present invention is as follows:

[0005] The invention discloses a novel power MOS module structure which is easy to expand. The structure comprises a DBC board with copper foils on both sides. Two groups of power MOS modules are also arranged on the DBC board. Each group of power MOS modules integrates at least two MOS tubes connected in parallel in a row. The source electrodes of the MOS tubes of each group of power MOS modules are commonly connected to a source output copper foil and a source control copper foil on a DBC board. The drain electrodes are connected to a drain input copper foil on the DBC board. A control terminal is also led out from the drain input copper foil. The gate electrode is connected to the gate control copper foil. Main terminals are also welded on the drain input copper foil and the source output copper foil of each group of power MOS modules. The source output copper foil connected to one group of power MOS modules is connected to the drain input copper foil connected to another group of power MOS modules and they share a main terminal.

[0006] In the present invention, each group of power MOS modules integrates at least two MOS tubes connected in parallel in a row. The MOS tubes have a compact layout, high integration, and can output greater power. The drain input copper foil of each group of power MOS modules is led out with a control terminal, and the source is connected to a source control copper foil for an external drive board circuit. The drain input copper foil and the source output copper foil of the power MOS module are also welded with main terminals for connecting a large current output loop. The source output loop and the control end of the power MOS module are separated, thereby avoiding mutual influence with the source large current output loop, reducing the influence of voltage and current peaks on the entire circuit, and preventing the device from burning out. The MOS tubes on the entire DBC board are wired compactly, effectively reducing parasitic inductance and capacitance, etc. In the present invention, the source output copper foil connected to one group of power MOS modules is connected to the drain input copper foil connected to another group of power MOS modules, and are connected to a main terminal together. The main terminal is arranged on one side of the DBC board and connected to the external Vo. Two main terminals are also arranged on the other side of the DBC board and are respectively connected to V+ and V-. The main terminal externally connected to V+ is welded to the drain input copper foil of one of the above-mentioned groups of power MOS modules, and the main terminal externally connected to V- is welded to the source output copper foil of the above-mentioned other group of power MOS modules. A miniaturized DBC board with three main terminals is used, and an external large current output circuit is used. It has a simple structure and simplified wiring, and can be applied to motor control and BMS occasions. By changing the internal wiring of the DBC, the multifunctionality of the module is realized.

[0007] Furthermore, each group of power MOS modules is divided into at least two parallel power MOS small modules, and the MOS tube gate of each power MOS small module is connected to a gate control end copper foil, and each gate control end copper foil is controlled and connected by an external circuit. With the above structure, the gates of the two parallel power MOS small modules are not directly connected, but are respectively connected to a gate control end copper foil, and the two gate control end copper foils are controlled and connected by an external circuit, which can effectively reduce the voltage spike pulse of the gate in the MOS tube application.

[0008] Furthermore, each power MOS module integrates at least one MOS tube. The above structure enables the power MOS module to have a higher integration level and higher reliability, and is suitable for larger power devices.

[0009] Furthermore, the MOS tube of each group of power MOS modules is packaged on the drain input copper foil by chip. The above structure can reduce the production volume of the power MOS module, meet the requirements of large current passing, output greater power, shorten the current path length, and reduce heat generation.

[0010] Furthermore, the gate control copper foil and the source control copper foil are both welded with auxiliary terminals, which are arranged on both sides of the DBC board for connecting to the external driver board circuit. The auxiliary terminals are used to facilitate the connection of each control copper foil of the power MOS module with the external circuit through the auxiliary terminals.

[0011] Furthermore, the DBC board is also provided with a thermistor, and two lead terminals connected to the thermistor are led out from one side of the DBC board. With the above structure, the temperature of the power MOS module on the DBC board is monitored to adjust the heat dissipation intensity of the external heat dissipation device.

[0012] Furthermore, the power MOS module is encapsulated on the DBC board by epoxy resin molding compound. With the above structure, it has good thermal conductivity, is easy to dissipate heat, is not easy to deform, is moisture-proof, and has strong corrosion resistance. Compared with the occasions where silicone gel is conventionally used for sealing, the reliability and life span are greatly improved, ensuring the good condition of the internal power MOS module and bonding wires, and can be used for the power MOS module of high-power electrical appliances.

[0013] Furthermore, the MOS tubes are connected to the gate control end copper foil, the source control end copper foil and the source output end copper foil respectively through aluminum tapes.

[0014] Furthermore, the MOS tubes are connected to the gate control end copper foil, the source control end copper foil and the source output end copper foil respectively through bonding wires.

[0015] In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are:

[0016] 1. The present invention is a new type of power MOS module structure that is easy to expand. Each group of power MOS modules can integrate multiple MOS tubes connected in parallel. The MOS tubes are welded on the DBC board using the patch process. The layout is compact, the volume is small, the integration is high, the heat is reduced, the large current can be passed, and a larger power can be output.

[0017] 2. The present invention is a new type of power MOS module structure that is easy to expand. The source output circuit and the control end of the power MOS module are separated, avoiding the mutual influence between the source high current output circuit, reducing the influence of voltage and current peaks on the entire circuit, and preventing device burnout.

[0018] 3. The present invention is a new type of power MOS module structure that is easy to expand. The MOS tubes of each group of power MOS modules are compactly arranged, which effectively reduces the influence of parasitic inductance, parasitic capacitance, etc. of the entire device.

[0019] 4. The present invention is a new type of power MOS module structure that is easy to expand. It adopts a miniaturized DBC board with three main terminals and an external large current output circuit. It has a simple structure and simplified wiring. It can be applied to motor control and BMS occasions to realize the multifunctionality of the module.

[0020] 5. The present invention is a novel power MOS module structure that is easy to expand. A thermistor is arranged on the DBC board to monitor the temperature of the power MOS module on the DBC board so as to adjust the heat dissipation intensity of the external heat dissipation device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and should not be regarded as limiting the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative work, among which:

[0022] Figure 1 It is a schematic diagram of the structure of the present invention;

[0023] Figure 2 It is the circuit principle diagram of the present invention;

[0024] Figure 3 It is a schematic diagram of the structure after packaging of the present invention;

[0025] Figure 4 It is a schematic diagram of the back structure after packaging of the present invention.

[0026] Explanation of the figure numbers: 1-DBC board, 2-MOS tube, 3-drain input copper foil, 4-source output copper foil, 5-source control copper foil, 6-gate control copper foil, 7-main terminal, 8-control terminal, 9-auxiliary terminal, 10-thermistor, 11-lead terminal. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical scheme and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention, that is, the embodiments described are only part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0028] All features disclosed in this specification, or all steps in methods or processes disclosed, except mutually exclusive features and, may be combined in any manner.

[0029] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0030] Example 1

[0031] like Figure 1-4 As shown, the present invention is a novel power MOS module structure that is easy to expand, including a DBC board 1 with copper foil on both sides, and two groups of power MOS modules are also arranged on the DBC board 1. Each group of power MOS modules integrates at least two MOS tubes 2 connected in parallel. The source of the MOS tubes 2 of each group of power MOS modules is commonly connected to a source output copper foil 4 and a source control copper foil 5 on a DBC board 1, and the drain is connected to the drain input copper foil 3 on the DBC board 1, and a control terminal 8 is also led out from the drain input copper foil 3, and the gate is connected to the gate control copper foil 6. The drain input copper foil 3 and the source output copper foil 4 of each group of power MOS modules are also welded with a main terminal 7, wherein the source output copper foil 4 connected to one group of power MOS modules is connected to the drain input copper foil 3 connected to the other group of power MOS modules and shares a main terminal 7.

[0032] In the present invention, the DBC board 1 adopts an aluminum nitride ceramic substrate, which has good heat dissipation effect and long service life. Two groups of power MOS modules are also arranged on the DBC board 1. Each group of power MOS modules integrates at least two MOS tubes 2 connected in parallel in a row. Multiple MOS tubes 2 can be integrated as needed. The MOS tubes 2 have a compact layout and high integration, and can output greater power. The drain input copper foil 3 of each group of power MOS modules leads to a control terminal 8, and the source is connected to a source control copper foil 5 for an external drive board circuit. The drain input copper foil 3 and the source output copper foil 4 of the power MOS module are also welded with a main terminal 7 for connecting a large current output circuit. The source output circuit and the control end of the power MOS module are separated, thereby avoiding mutual influence with the source large current output circuit, reducing the influence of voltage and current peaks on the entire circuit, and preventing the device from burning out. The MOS tubes 2 on the entire DBC board 1 are wired compactly, effectively reducing parasitic inductance and capacitance. In the present invention, the source output copper foil 4 connected to one group of power MOS modules is connected to the drain input copper foil 3 connected to another group of power MOS modules, and are connected to a main terminal 7 together. The main terminal 7 is arranged on one side of the DBC board 1 and connected to the external Vo. Two main terminals 7 are also arranged on the other side of the DBC board 1 and are respectively connected to V+ and V-. The main terminal 7 externally connected to V+ is welded to the drain input copper foil 3 of one of the above-mentioned groups of power MOS modules, and the main terminal 7 externally connected to V- is welded to the source output copper foil 4 of the above-mentioned other group of power MOS modules. A miniaturized DBC board 1 with three main terminals 7 is used, and an external large current output circuit is connected. It has a simple structure and simplified wiring, and can be applied to motor control and BMS occasions. By changing the internal wiring of the DBC, the multifunctionality of the module is realized.

[0033] Example 2

[0034] This embodiment is a further description of the present invention.

[0035] like Figure 1 As shown, this embodiment is based on the embodiment 1. In a preferred embodiment of the present invention, each group of power MOS modules is divided into at least two parallel power MOS small modules, and the gate of the MOS tube 2 of each power MOS small module is respectively connected to a gate control end copper foil 6, and each gate control end copper foil 6 is controlled and connected by an external circuit. With the above structure, the gates of the MOS tubes 2 of the two parallel power MOS small modules are not directly connected, but are respectively connected to a gate control end copper foil 6, and the two gate control end copper foils 6 are controlled and connected by an external circuit, which can effectively reduce the voltage spike pulse of the gate of the MOS tube 2 in the application.

[0036] In a preferred embodiment of the present invention, each power MOS small module integrates at least one MOS tube 2. With the above structure, each power MOS small module can integrate one, two or more MOS tubes 2 according to actual needs, so that the power MOS module has higher integration and higher reliability, and is suitable for larger power devices.

[0037] Example 3

[0038] This embodiment is a further description of the present invention.

[0039] In this embodiment, based on the above, in a preferred embodiment of the present invention, the MOS tube 2 of each group of power MOS modules is packaged on the drain input copper foil 3 by chip packaging. With the above structure, the manufacturing volume of the power MOS module can be reduced, the requirement of large current passing can be met, greater power can be output, and the path length of the current can be shortened to reduce heat generation.

[0040] Example 4

[0041] This embodiment is a further description of the present invention.

[0042] like Figure 1 , 3 As shown, this embodiment is based on the above embodiment. In a preferred embodiment of the present invention, the gate control end copper foil 6 and the source control end copper foil 5 are both welded with auxiliary terminals 9, and the auxiliary terminals 9 are arranged on both sides of the DBC board 1 for connecting with the external drive board circuit. The above auxiliary terminals are used to facilitate the connection of each control end copper foil of the power MOS module with the external circuit through the auxiliary terminals 9.

[0043] Example 5

[0044] This embodiment is a further description of the present invention.

[0045] like Figure 1 As shown, this embodiment is based on the above embodiment. In a preferred embodiment of the present invention, a thermistor 10 is further provided on the DBC board 1, and two lead terminals 11 connected to the thermistor 10 are also led out on one side of the DBC board 1. With the above structure, the temperature of the power MOS module on the DBC board is monitored so as to adjust the heat dissipation intensity of the external heat dissipation device.

[0046] Example 6

[0047] This embodiment is a further description of the present invention.

[0048] This embodiment is based on the above embodiment. In a preferred embodiment of the present invention, the power MOS module is encapsulated on the DBC board 1 by epoxy resin molding compound. With the above structure, it has good thermal conductivity, is easy to dissipate heat, is not easy to deform, is moisture-proof, and has strong corrosion resistance. Compared with the occasion of conventional silicone gel sealing, the reliability and life span are greatly improved, ensuring the good condition of the internal power MOS module and bonding wires, and can be used for the power MOS module of high-power electrical appliances.

[0049] Example 7

[0050] This embodiment is a further description of the present invention.

[0051] This embodiment is based on the above embodiment. In a preferred embodiment of the present invention, the MOS tube 2 is connected to the gate control end copper foil 6, the source control end copper foil 5 and the source output end copper foil 4 respectively through aluminum tape.

[0052] Example 8

[0053] This embodiment is a further description of the present invention.

[0054] This embodiment is based on the above embodiment. In a preferred embodiment of the present invention, the MOS tubes 2 are connected to the gate control terminal copper foil 6, the source control terminal copper foil 5 and the source output terminal copper foil 4 respectively through bonding wires.

[0055] The above is only a preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be thought of by a person skilled in the art within the technical scope disclosed by the present invention without creative work should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope defined in the claims.

Claims

1. A power MOS module structure that is easy to expand, characterized in that: The invention comprises a DBC board (1) with copper foil on both sides, wherein two groups of power MOS modules are also arranged on the DBC board (1), each group of power MOS modules integrates at least two MOS tubes (2) connected in parallel in a row, the source electrodes of the MOS tubes (2) of each group of power MOS modules are commonly connected to a source output copper foil (4) and a source control copper foil (5) on a DBC board (1), the drain electrodes are connected to a drain input copper foil (3) on the DBC board (1), and a control terminal (8) is also led out from the drain input copper foil (3), the gate electrode is connected to the gate control copper foil (6), and main terminals (7) are also welded to the drain input copper foil (3) and the source output copper foil (4) of each group of power MOS modules, wherein the source output copper foil (4) connected to one group of power MOS modules is connected to the drain input copper foil (3) connected to another group of power MOS modules and they share a main terminal (7); Each group of power MOS modules is further divided into at least two parallel-connected power MOS small modules, the gate of the MOS tube (2) of each power MOS small module is respectively connected to a gate control end copper foil (6), and each gate control end copper foil (6) is controlled and connected by an external circuit; The parallel MOS tubes (2) of each group of power MOS modules are all packaged on the drain input end copper foil (3) using a patch package.

2. The scalable power MOS module structure according to claim 1, characterized in that: Each power MOS small module integrates at least one MOS tube (2).

3. The scalable power MOS module structure according to claim 1, characterized in that: The gate control end copper foil (6) and the source control end copper foil (5) are both welded with auxiliary terminals (9), and the auxiliary terminals (9) are arranged on both sides of the DBC board (1) and are used to be connected to an external drive board circuit.

4. The scalable power MOS module structure according to claim 1, characterized in that: The DBC board (1) is also provided with a thermistor (10), and two lead terminals (11) connected to the thermistor (10) are led out from one side of the DBC board (1).

5. The scalable power MOS module structure according to claim 1, characterized in that: The power MOS module is encapsulated on the DBC board (1) by epoxy resin molding compound.

6. The scalable power MOS module structure according to claim 1, characterized in that: The MOS tubes (2) are respectively connected to the gate control end copper foil (6), the source control end copper foil (5) and the source output end copper foil (4) through aluminum strips.

7. The scalable power MOS module structure according to claim 1, characterized in that: The MOS tubes (2) are respectively connected to the gate control end copper foil (6), the source control end copper foil (5) and the source output end copper foil (4) through bonding wires.

Citation Information

Patent Citations

  • Novel power MOS module structure

    CN210403701U