Methods and apparatus for improving the thickness stability of the gate conductive layer protective layer

Abstract

This invention provides a method and apparatus for improving the stability of the gate conductive layer protective layer thickness. The method includes four steps, S1-S4: compensation setting, silicon nitride deposition, automatic film removal, and reverse compensation calculation. By optimizing the equipment and operation process for improving the stability of the gate conductive layer protective layer thickness, that is, by optimizing the batch control device during the automatic film removal process of the silicon nitride deposition furnace, the wafer in the silicon nitride deposition furnace can ensure the stability of the gate conductive layer protective layer thickness when depositing the gate conductive layer protective layer, thereby ensuring the wafer product yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor integrated circuit memory technology, and particularly to the structure and process of memory component devices, especially to methods and apparatus for improving the stability of the gate conductive layer protective layer thickness. Background Technology

[0002] Because the low-pressure chemical vapor deposition (LPCVD) silicon nitride furnace tube 100 deposits some silicon nitride on components such as the crystal boat 110, inner quartz tube 102, and outer quartz tube 101 during routine thin film deposition, such as... Figure 1 A schematic diagram of the silicon nitride furnace tube machine 100 is shown. As the number of batches processed increases, more and more thin films remain on the parts, which can easily detach onto the wafer, generating particles. Generally, after running a quantitative batch, the LPCVD silicon nitride furnace tube undergoes periodic automatic film removal maintenance (AUTO CLN). AUTO CLN involves introducing corrosive gases such as fluorine to etch the remaining thin films on the parts, causing a large amount of the residual film to detach from the parts and be sent to the plant after purging. Since the thin films on parts such as the wafer boat 110, inner quartz tube 102, and outer quartz tube 101 of the LPCVD silicon nitride furnace tube are removed after AUTO CLN, the machine will deposit a portion of the film onto these parts during the subsequent deposition process. As the number of runs gradually increases, the thin films deposited on parts such as the crystal boat and inner and outer quartz tubes gradually become saturated. The amount of thin film that needs to be compensated for on these parts will decrease, while the amount of thin film deposited on the wafer will increase.

[0003] Because LPCVD silicon nitride equipment deposits a portion of the film onto parts such as the wafer boat and inner / outer quartz tubes during subsequent depositions after AUTO CLN, and as the number of run batches gradually increases, the film deposited on these parts gradually becomes saturated, requiring less compensation film. Therefore, within the same AUTO CLN cycle, under the same run conditions, the film thickness of the first run batch after AUTO CLN is significantly lower than the film thickness before AUTO CLN, and the film thickness increases with the number of run batches. However, once the film deposited on the parts becomes saturated, the film thickness deposited on the wafer remains essentially unchanged. Figure 2As shown, this phenomenon becomes more pronounced as the target thickness of the run process increases. The gate conductive layer (PG GATE SIN layer) is the process with the largest target thickness in the diffused silicon nitride process (1800 angstroms), so this phenomenon is particularly noticeable.

[0004] like Figure 3 As shown, when the thickness of the gate conductive layer protective layer 503 (PG GATE SIN layer, Si3N4 layer) is too large, the SiO2 layer left above the array 501 region after the subsequent deposition of the memory node contact oxide layer 504 (SNC OX layer, SiO2 layer formed by SOD method) will be too thick. When the thickness of the leftover memory node contact oxide layer 504 is too large, during the subsequent etching of the memory node contact oxide layer 504 and the composite layer 505 (oxide, carbon, SION etc...) above it, due to the limitations of the etching machine process, the etched layer cannot be completely etched, which in turn causes the subsequently deposited memory node contact (SNC) layer 506 (Poly and metal etc...) to fail to contact the array region, resulting in a leftover filling layer H1, causing the working element to fail. When the thickness of the gate conductive protective layer 503 is too small, the SiO2 layer remaining above the array region after the subsequent deposition of the memory node contact oxide layer will be insufficient. This results in a shorter channel length after etching the memory node contact oxide layer and the composite layer above it, leading to an insufficient thickness of the deposited memory node contact layer and an insufficient distance K1 between the gate conductive layer and the metal layer. Consequently, the coupling effect between the metal 507 above the memory node contact layer and the gate conductive layer 502 is too large, affecting device performance. Figure 4 As shown. Therefore, the stability of the thickness of the 503 thin film protecting the gate conductive layer plays a very important role in ensuring product yield. Summary of the Invention

[0005] The technical problem to be solved by this invention is to provide a method and apparatus for improving the thickness stability of the gate conductive layer protective layer, thereby reducing the risk of wafer product defects caused by poor thickness stability of the gate conductive layer protective layer and ensuring wafer product yield. To achieve the above technical objective, the specific technical solution adopted by this invention is as follows: A method for improving the thickness stability of the gate conductive layer protective layer, comprising the following steps:

[0006] S1. An apparatus for improving the film thickness stability of a gate conductive layer protective layer is provided. The apparatus includes a silicon nitride deposition furnace, an automatic film removal drive device, a batch control device, and a film thickness setting device. The silicon nitride deposition furnace is used for the process of depositing a protective layer for the gate conductive layer. The automatic film removal drive device is connected to the silicon nitride deposition furnace and is used to drive the silicon nitride deposition furnace to automatically remove the film accumulated on the internal components of the silicon nitride deposition furnace. The batch control device includes a preset value processing unit and a compensation value processing unit. The preset value processing unit is used to set the preset parameter value (default) of the batch being processed. The compensation value processing unit is used to set the processing... The count compensation value of the batch; the count compensation value is matched with the film thickness deviation value (Offset(1st~2nd)) between the corresponding batch and the previous batch in the same automatic film removal cycle when the batch control device is not used, and the count compensation value corresponds to the batch order compensation correction of the processed batch to the preset parameter value (default); the film thickness setting device is used to collect the thickness of the film deposited by each process in an automatic film removal cycle of each silicon nitride deposition furnace tube and set the film thickness target value; step S1 includes: loading a wafer boat into the silicon nitride deposition furnace tube; turning on the batch control device; setting the film thickness target value in the preset value processing unit in the batch control device;

[0007] S2. The silicon nitride deposition furnace tube is driven by the batch control device to perform a silicon nitride deposition process, including performing a first batch of processing, after which the film thickness setting device detects a film thickness value of C1; performing a second batch of processing, after which the film thickness setting device detects a film thickness value of C2; until the nth batch of processing is performed, after which the film thickness setting device detects a film thickness value of Cn.

[0008] S3. When the film thickness value detected after the nth batch processing reaches the target film thickness value, the trigger component in the automatic film removal drive device is automatically activated, causing the silicon nitride deposition furnace tube machine to start automatic film removal; when the automatic film removal is completed, the stop component in the automatic film removal drive device is automatically triggered to shut down the automatic film removal operation of the silicon nitride deposition furnace tube machine, and at the same time, the batch count value is automatically reset to zero, and the automatic film removal drive device feeds back the automatic film removal information to the batch control device to perform the first batch processing in step S2;

[0009] S4. The compensation value processing unit in the batch control device processes the data collected in step S3, converts the difference in film thickness D1, D2, D3...Dn after processing the previous and next batches into a continuous operation compensation value f(x), and calls the preset parameter value after sequential compensation correction for the corresponding batch in step S2 to process the preset parameter value for the current batch, where x = 1, 1, 2, 3, 4...n-1, and n is a positive integer. When the silicon nitride deposition furnace tube machine processes the second batch or different batches after the second batch, it automatically adds or subtracts the corresponding continuous compensation value and the preset parameter value for the current batch to perform the second batch or post-second batch processing in step S2.

[0010] As an improved technical solution of the present invention, the film thickness detection points in step S3 are divided into top detection points, upper half detection points, middle detection points, and bottom detection points according to the height of the silicon nitride deposition furnace tube.

[0011] As an improved technical solution of the present invention, in step S2 between the two triggering times of automatic film removal in step S3, the film thickness of all batch processes deposited in the same automatic film removal cycle is between 1770 angstroms and 1830 angstroms, so as to form the gate conductive layer protection layer of the integrated circuit transistor.

[0012] The present invention also provides an apparatus for improving the stability of the protective layer thickness of the gate conductive layer, the apparatus comprising a silicon nitride deposition furnace, an automatic film removal drive device, a batch control device, and a film thickness setting device.

[0013] The silicon nitride deposition furnace tube machine is used for the process of depositing a protective layer for the gate conductive layer.

[0014] The automatic film removal drive device is connected to the silicon nitride deposition furnace tube machine and is used to drive the silicon nitride deposition furnace tube machine to perform automatic removal of the film accumulated on the internal components of the silicon nitride deposition furnace tube machine.

[0015] The batch control device includes a preset value processing unit and a compensation value processing unit. The preset value processing unit is used to set the preset parameter value (default) of the batch being processed. The compensation value processing unit is used to set the count compensation value of the batch being processed. The count compensation value is matched with the film thickness deviation value (Offset (1st~2nd)) between the corresponding batch and the previous batch in the same automatic film removal cycle when the batch control device is not used. The count compensation value is used to compensate and correct the preset parameter value (default) according to the batch order of the processed batches.

[0016] The film thickness setting device is used to collect the thickness of the thin film deposited by each process in an automatic film removal cycle of each silicon nitride deposition furnace tube and set the target film thickness value.

[0017] As an improved technical solution of the present invention, at least one detection point is provided inside the silicon nitride deposition furnace tube machine.

[0018] As an improved technical solution of the present invention, the detection points include a top detection point, an upper half detection point, a middle detection point, and a bottom detection point.

[0019] As an improved technical solution of the present invention, the thickness of the gate conductive layer protective layer is between 1770 angstroms and 1830 angstroms.

[0020] As an improved technical solution of the present invention, the automatic film removal driving device is further provided with a trigger component and a stop component.

[0021] Beneficial effects

[0022] To improve the stability of the gate conductive layer protective layer thickness, this invention provides an apparatus and method for improving the stability of the gate conductive layer protective layer thickness. The apparatus includes a silicon nitride deposition furnace, an automatic film removal drive device, a batch control device, and a film thickness setting device. During the automatic film removal process of the silicon nitride deposition furnace, by optimizing the batch control device, the wafer in the silicon nitride deposition furnace can ensure the stability of the gate conductive layer protective layer thickness when depositing the gate conductive layer protective layer, thereby ensuring the wafer product yield. Attached Figure Description

[0023] Figure 1 A schematic diagram of a silicon nitride furnace tube machine is shown.

[0024] Figure 2 The film thickness of the gate conductive layer protective layer with different batch numbers of processing is plotted under the same conditions.

[0025] Figure 3 A schematic diagram illustrating the process of wafer defects caused by excessive thickness of the gate conductive layer protective layer.

[0026] Figure 4 A schematic diagram illustrating the process of wafer defects caused by insufficient thickness of the gate conductive layer protective layer.

[0027] Figure 5 A schematic diagram illustrating the operation flow of the method of the present invention is shown.

[0028] Figure 6 A schematic diagram illustrating thickness compensation for different batches of the gate conductive layer protective layer under the same conditions is shown.

[0029] Figure 7 A schematic diagram illustrating the wafer gate conductive layer protective layer deposition process using the improved batch control device of the present invention.

[0030] Figure 8A graph showing the trend of gate conductive layer protective layer thickness when the improved batch control device of the present invention is used.

[0031] Figure 9 A process flow diagram illustrating the method of the present invention is shown.

[0032] In the figure, 100 is the silicon nitride deposition furnace tube; 101 is the outer quartz tube; 102 is the inner quartz tube; 110 is the crystal boat; 200 is the automatic film removal drive device; 201 is the start button; 202 is the end button; 300 is the batch control device; 301 is the preset value processing unit; 302 is the compensation value processing unit; 400 is the film thickness setting device; 500 is the wafer; 501 is the array layer; 502 is the gate conductive layer; 503 is the gate conductive layer protective layer; 504 is the fill layer; 505 is the composite layer; 506 is the memory node contact layer; 507 is the metal layer; H1 is the residual fill layer; K1 is the distance between the gate conductive layer and the metal layer; Cn is the film thickness value; Dn is the difference in film thickness; f(x) is the continuous operation compensation value. Detailed Implementation

[0033] To make the objectives and technical solutions of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0034] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless defined as herein.

[0035] Example 1

[0036] To improve the stability of the gate conductive layer protective layer thickness, this invention provides a method for improving the stability of the gate conductive layer protective layer thickness, such as... Figure 9 The diagram illustrates the process flow of the method of the present invention, which specifically includes the following steps:

[0037] S1. An apparatus for improving the film thickness stability of a gate conductive layer protective layer is provided. The apparatus includes a silicon nitride deposition furnace 100, an automatic film removal drive device 200, a batch control device 300, and a film thickness setting device 400. The silicon nitride deposition furnace 100 is used for the process of depositing a gate conductive layer protective layer. The automatic film removal drive device 200 is connected to the silicon nitride deposition furnace 100 and is used to drive the silicon nitride deposition furnace 100 to automatically remove the film accumulated on the internal components of the silicon nitride deposition furnace 100. The batch control device 300 includes a preset value processing unit 301 and a compensation value processing unit 302. The preset value processing unit 301 is used to set the preset parameter value (default) of the batch being processed. The compensation value processing unit 301... 2. Used to set the count compensation value for the processed batch; the count compensation value matches the film thickness deviation value (Offset(1st~2nd)) between the corresponding batch and the previous batch in the same automatic film removal cycle when the batch control device 300 is not used, and the count compensation value corresponds to the batch order compensation correction of the preset parameter value (default) for the processed batch; the film thickness setting device 400 is used to collect the film thickness of each silicon nitride deposition furnace tube 100 in each process in an automatic film removal cycle and set the film thickness target value; step S1 includes: loading a wafer boat 110 containing wafers 500 into the silicon nitride deposition furnace tube 100; turning on the batch control device 300; setting the film thickness target value in the preset value processing unit 301 in the batch control device 300.

[0038] S2, such as Figure 5 The diagram illustrates the operation flow of the method of the present invention. The silicon nitride deposition furnace tube machine 100 is driven by the batch control device 300 to perform a silicon nitride deposition process, including performing a first batch processing, after which the film thickness setting device 400 detects a film thickness value of C1; performing a second batch processing, after which the film thickness setting device 400 detects a film thickness value of C2; until the nth batch processing, after which the film thickness setting device 400 detects a film thickness value of Cn.

[0039] S3. When the film thickness value detected after the nth batch processing reaches the target film thickness value, the trigger component 201 in the automatic film removal drive device 200 is automatically activated, causing the silicon nitride deposition furnace tube machine 100 to start automatic film removal; when the automatic film removal is completed, the stop component 202 in the automatic film removal drive device 200 is automatically triggered to shut down the automatic film removal operation of the silicon nitride deposition furnace tube machine 100, and at the same time, the batch count value is automatically reset to zero, and the automatic film removal drive device 200 feeds back the automatic film removal information to the batch control device 300 to perform the first batch processing in step S2;

[0040] S4. The compensation value processing unit 302 in the batch control device 300 processes the data collected in step S3, converts the difference in film thickness D1, D2, D3...Dn after processing the previous and next batches into a continuous operation compensation value f(x), and calls the preset parameter value after sequential compensation correction for the corresponding batch in step S2 to the preset parameter value for the current batch processing, where x = 1, 1, 2, 3, 4...n-1, and n is a positive integer. When the silicon nitride deposition furnace tube machine 100 processes the second batch or different batches after the second batch, it automatically adds or subtracts the corresponding continuous operation compensation value and the preset parameter value for the current batch processing to perform the second batch or post-second batch processing in step S2.

[0041] Specifically, see Table 1, which shows the film thickness and compensation values ​​of the silicon nitride deposition furnace tube 100 at different times and locations.

[0042] Table 1. Film thickness and thickness deviation values ​​at different times and locations on the silicon nitride deposition furnace.

[0043]

[0044] As can be seen from Table 1, except for the central detection point, the film thickness deviation value of 1 is the largest at other detection points. This is because after automatic film removal, the silicon nitride film on each component of the silicon nitride deposition furnace 100 is removed. During the first batch processing after automatic film thickness removal, the gate conductive layer protective layer 503 is deposited on the wafer 500. In this embodiment, the deposited gate conductive layer protective layer 503 is a silicon nitride film. At this time, a lot of silicon nitride that should have been deposited on the wafer 500 is deposited on each component of the silicon nitride deposition furnace 100, resulting in a sharp decrease in the thickness of the silicon nitride film deposited on the wafer 500. Figure 2As shown, the thickness of the gate conductive layer protective layer 503 deposited on the wafer 500 under the same conditions for different batches is illustrated. The thickness of the gate conductive layer protective layer 503 ranges from 1570 angstroms to 1830 angstroms, and the thickness is extremely unstable. During the second batch processing, since some silicon nitride films have already been deposited on the various components of the silicon nitride deposition furnace tube 100, it will not attract a large amount of silicon nitride to continue depositing on the various components of the silicon nitride deposition furnace tube 100. As a result, the amount of silicon nitride film deposited on the wafer 500 also increases until the silicon nitride film deposited on the various components of the silicon nitride deposition furnace tube 100 is saturated, that is, the thickness of the silicon nitride film deposited on the wafer 500 no longer changes.

[0045] Specifically, the present invention connects the batch control device 300 to the automatic film removal drive device 200. As the running time of the automatic film removal drive device 200 changes, the film thickness accumulated on the internal components of the silicon nitride deposition furnace tube 100 gradually increases. These film thickness values ​​are collected and processed by the film thickness setting device 400. The processed data is transmitted to the compensation value processing unit 302 to achieve automatic reverse compensation. That is, at the same detection point other than the middle detection point, when the silicon nitride deposition furnace tube 100 automatically removes the film for the first batch of processing, the film thickness deviation value 1 that is compensated is the largest. The film thickness deviation value 2 when processing the second batch is less than the film thickness deviation value 1 when processing the first batch. The film thickness deviation value 3 when processing the third batch is less than the film thickness deviation value 2 when processing the first batch. However, since the film thickness is constant at the middle detection point, the film thickness deviation value is always zero. This ensures that the protective layer thickness of the gate conductive layer deposited on the wafer 500 is uniform and stable, generally remaining between 1770 angstroms and 1830 angstroms, thereby guaranteeing the yield of the wafer 500 products. Figure 7 A schematic diagram illustrating the wafer gate conductive layer protective layer deposition process using the improved batch control device of the present invention is shown, as follows: Figure 8 A graph showing the trend of gate conductive layer protective layer thickness during batch processing after the improvement of the present invention is presented.

[0046] Example 2

[0047] The present invention also provides an apparatus for improving the thickness stability of the gate conductive layer protective layer. The apparatus includes a silicon nitride deposition furnace 100, an automatic film removal drive device 200, a batch control device 300, and a film thickness setting device 400. The silicon nitride deposition furnace 100 is used for the process of depositing a protective layer for the gate conductive layer. The automatic film removal drive device 200 is connected to the silicon nitride deposition furnace 100 and is used to drive the silicon nitride deposition furnace 100. The automatic film removal drive device 200 is further provided with a trigger component 201 and a stop component 202 to automatically remove the film accumulated on the internal components of the silicon nitride deposition furnace 100. The batch control device 300 is provided with a preset value processing unit 301. The preset value processing unit 301 is used to set the preset parameter value (default) of the processed batch; the compensation value processing unit 302 is used to set the count compensation value of the processed batch; the count compensation value is matched with the film thickness deviation value (Offset (1st~2nd)) between the corresponding batch and the previous batch in the same automatic film removal cycle when the batch control device 300 is not used; the count compensation value is used to compensate and correct the preset parameter value (default) according to the batch order of the processed batch; the film thickness setting device 400 is used to collect the film thickness of each process deposited by each silicon nitride deposition furnace tube 100 in an automatic film removal cycle and set the film thickness target value. The silicon nitride deposition furnace tube 100 is provided with at least one detection point, including a top detection point, an upper half detection point, a middle detection point, a lower half monitoring point, and a bottom detection point. These detection points are used to collect the film thickness values ​​at corresponding positions within the silicon nitride deposition furnace tube 100 and transmit these collected film thickness values ​​to the film thickness setting device 400.

[0048] After the above settings, the automatic film removal drive device 200, during the automatic film removal process, changes the existing technology where the film thickness of the first batch of thin films on the internal components of the silicon nitride deposition furnace 100 is significantly lower than the film thickness before automatic film removal. This further avoids the instability of the film thickness when depositing the gate conductive layer protective layer on the wafer 500 within the silicon nitride deposition furnace 100. The final thickness of the gate conductive layer protective layer on the wafer 500 is between 1770 angstroms and 1830 angstroms. Figure 8 The graph illustrates the trend of gate conductive layer protective layer thickness during batch processing after the improvement of this invention, thereby avoiding wafer product defects and greatly improving wafer product yield.

[0049] The above are merely embodiments of the present invention, described in a relatively specific and detailed manner, but should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention.

Claims

1. A method for improving the thickness stability of the gate conductive layer protective layer, characterized in that, Includes the following steps: S1. An apparatus for improving the film thickness stability of a gate conductive layer protective layer is provided. The apparatus includes a silicon nitride deposition furnace, an automatic film removal drive device, a batch control device, and a film thickness setting device. The silicon nitride deposition furnace is used for the process of depositing a protective layer for the gate conductive layer. The automatic film removal drive device is connected to the silicon nitride deposition furnace and is used to drive the silicon nitride deposition furnace to automatically remove the film accumulated on the internal components of the silicon nitride deposition furnace. The batch control device includes a preset value processing unit and a compensation value processing unit. The preset value processing unit is used to set the preset parameter value (default) of the batch being processed. The compensation value processing unit is used to set the processing... The count compensation value of the batch; the count compensation value is matched with the film thickness deviation value (Offset(1st~2nd)) between the corresponding batch and the previous batch in the same automatic film removal cycle when the batch control device is not used, and the count compensation value corresponds to the batch order compensation correction of the processed batch to the preset parameter value (default); the film thickness setting device is used to collect the thickness of the film deposited by each process in an automatic film removal cycle of each silicon nitride deposition furnace tube and set the film thickness target value; step S1 includes: loading a wafer boat into the silicon nitride deposition furnace tube; turning on the batch control device; setting the film thickness target value in the preset value processing unit in the batch control device; S2. The silicon nitride deposition furnace tube is driven by the batch control device to perform a silicon nitride deposition process, including performing a first batch of processing, after which the film thickness setting device detects a film thickness value of C1; performing a second batch of processing, after which the film thickness setting device detects a film thickness value of C2; until the nth batch of processing is performed, after which the film thickness setting device detects a film thickness value of Cn. S3. When the film thickness value detected after the nth batch processing reaches the target film thickness value, the trigger component in the automatic film removal drive device is automatically activated, causing the silicon nitride deposition furnace tube machine to start automatic film removal; when the automatic film removal is completed, the stop component in the automatic film removal drive device is automatically triggered to shut down the automatic film removal operation of the silicon nitride deposition furnace tube machine, and at the same time, the batch count value is automatically reset to zero, and the automatic film removal drive device feeds back the automatic film removal information to the batch control device to perform the first batch processing in step S2; S4. The compensation value processing unit in the batch control device processes the data collected in step S3, converts the difference in film thickness D1, D2, D3...Dn after processing the previous and next batches into a continuous operation compensation value f(x), and calls the preset parameter value after sequential compensation correction for the corresponding batch in step S2 to the preset parameter value for the current batch processing, where x = 1, 1, 2, 3, 4...n-1, and n is a positive integer. When the silicon nitride deposition furnace tube machine processes the second batch or different batches after the second batch, it automatically adds or subtracts the corresponding continuous operation compensation value f(x) and the preset parameter value for the current batch processing to perform the second batch or post-second batch processing in step S2.

2. The method according to claim 1, characterized in that, In step S3, the film thickness detection points are divided into top detection points, upper half detection points, middle detection points, and bottom detection points according to the height of the silicon nitride deposition furnace tube.

3. The method according to claim 1, characterized in that, In step S2, between the two trigger points of automatic film removal in step S3, the film thickness deposited by all batch processes within the same automatic film removal cycle is between 1770 angstroms and 1830 angstroms, in order to form the gate conductive layer protective layer of the integrated circuit transistor.

4. An apparatus for improving the stability of the protective layer thickness of the gate conductive layer, characterized in that, The equipment includes a silicon nitride deposition furnace tube machine, an automatic film removal drive device, a batch control device, and a film thickness setting device. The silicon nitride deposition furnace is used for the process of depositing a protective layer for the gate conductive layer; the automatic film removal drive device is connected to the silicon nitride deposition furnace and is used to drive the silicon nitride deposition furnace to perform automatic removal of the thin film accumulated on the internal components of the silicon nitride deposition furnace. The batch control device includes a preset value processing unit and a compensation value processing unit. The preset value processing unit is used to set the preset parameter value (default) of the batch being processed. The compensation value processing unit is used to set the count compensation value of the batch being processed. The count compensation value is matched with the film thickness deviation value (Offset (1st~2nd)) between the corresponding batch and the previous batch in the same automatic film removal cycle when the batch control device is not used. The count compensation value is used to compensate and correct the preset parameter value (default) according to the batch order of the processed batches. The film thickness setting device is used to collect the thickness of the thin film deposited by each process in an automatic film removal cycle of each silicon nitride deposition furnace tube and set the target film thickness value.

5. The device according to claim 4, characterized in that, The silicon nitride deposition furnace tube machine is equipped with at least one detection point.

6. The device according to claim 5, characterized in that, The detection points include a top detection point, an upper half detection point, a middle detection point, and a bottom detection point.

7. The device according to claim 4, characterized in that, The thickness of the gate conductive layer protective layer is between 1770 angstroms and 1830 angstroms.

8. The device according to claim 4, characterized in that, The automatic film removal drive device is also equipped with a trigger component and a stop component.

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