Substrate processing device and substrate processing method

Abstract

The present invention relates to a substrate processing device and a substrate processing method. The substrate processing device of the present invention comprises a loading unit, a layer and a control unit. The layers respectively comprise a first loading unit, a processing unit and a main conveying mechanism. The loading unit comprises a carrier loading unit and a conveying unit. The conveying unit performs a supply operation to convey a substrate from a carrier mounted on the carrier loading unit to the first loading unit. The first conveying mechanism further performs an inter-layer conveying operation to convey the substrate between two first loading units arranged on different layers.

Description

Technical Field

[0001] The present invention relates to a substrate processing device for processing a substrate, such as a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, and a substrate for a solar cell. Background Art

[0002] Japanese Patent Publication No. 2012-33863 discloses a coating and developing device. In the following, the symbols recorded in Japanese Patent Publication No. 2012-33863 are indicated in brackets. The coating and developing device (1) includes a carrier block (S1) and a processing block (S2). The carrier block (S1) includes a mounting table (11) and a transfer arm (13). The mounting table (11) is used to mount a carrier (C). The transfer arm (13) transports a wafer (W).

[0003] The processing block (S2) includes six unit blocks (B1-B6). The unit blocks (B1-B6) include main arms (A1-A6), liquid processing modules and heating modules respectively. The main arms (A1-A6) transport wafers (W) to the liquid processing modules and heating modules respectively.

[0004] The processing block (S2) is provided with a rack unit (U7). The rack unit (U7) is provided with a plurality of modules. The modules (BU1, CPL0) are arranged at a height position accessible to the transfer arm (13). The modules (CPL1-CPL3) are arranged at a height position accessible to the main arm (A1). The modules (CPL7-CPL8) are arranged at a height position accessible to the main arm (A3). The modules (CPL14-CPL15) are arranged at a height position accessible to the main arm (A6).

[0005] The processing block (S2) is provided with a transfer arm (30). The transfer arm (30) transfers wafers (W) between modules of the shelf unit (U7).

[0006] The coating and developing device (1) operates, for example, in the following manner. The transfer arm (13) transports the wafer (W) from the carrier (C) to the module (BU1). The transfer arm (30) transports the wafer (W) from the module (BU1) to the module (CPL1). The main arm (A1) transports the wafer (W) from the module (CPL1) to the liquid processing module and the heating module of the unit block (B1). Thereafter, the main arm (A1) transports the wafer (W) to the module (CPL3). The transfer arm (30) transports the wafer (W) from the module (CPL3) to the module (CPL7). The main arm (A3) transports the wafer (W) from the module (CPL7) to the liquid processing module and the heating module of the unit block (B3). The wafer (W) is then transported to the unit block (B6). The main arm (A6) transports the wafer (W) to the module (CPL15). The transfer arm (30) transfers the wafer (W) from the module (CPL15) to the module (CPL0). The transfer arm (13) transfers the wafer (W) from the module (CPL0) to the carrier (C). Summary of the invention

[0007] [Problems to be solved by the invention]

[0008] However, the coating and developing device (1) shown in Japanese Patent Publication No. 2012-33863 has the following problems. The transfer arm (13) is close to the module (BU1, CPL0). However, the main arm (A1-A6) cannot approach the module (BU1, CPL0) respectively. Therefore, the main arm (A1-A6) cannot directly obtain the wafer (W) loaded on the module (BU1) by the transfer arm (13). Conversely, the transfer arm (13) cannot directly obtain the wafer (W) loaded on the module of the rack unit (U7) by the main arm (A1-A6). Therefore, in order to transfer the wafer (W) between the transfer arm (13) and the main arm (A1-A6), the wafer (W) must be transported between the modules of the rack unit (U7). Therefore, it is impossible to efficiently transport the wafer (W) between the transfer arm (13) and the main arm (A1-A6). Therefore, it is difficult to further increase the processing capacity of the coating and developing device (1).

[0009] The main arm (A1) approaches the module (CPL1-CPL3). However, the other main arms (A2-A6) cannot approach the module (CPL1-CPL3). Therefore, in order to transport the wafer (W) between the main arm (A1) and the other main arms (A2-A6), the wafer (W) must be transported between the modules of the shelf unit (U7). Therefore, in addition to the transfer arm (13), the coating and developing device (1) has a transfer arm (30). The transfer arm (30) is specifically used to transport the wafer (W) between the modules of the shelf unit (U7). Therefore, the area occupied (installation area) of the coating and developing device (1) is large.

[0010] The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus capable of reducing the footprint of the substrate processing apparatus and increasing the processing throughput of the substrate processing apparatus.

[0011] [Technical means to solve the problem]

[0012] In order to achieve the above object, the present invention adopts the following configuration.

[0013] That is, the present invention is a substrate processing device, comprising: a loading part; a plurality of levels arranged in an up-and-down direction; and a control part, which controls the loading part and the levels; the levels respectively comprise: a first loading part for loading a substrate; a processing part for processing a substrate; and a main conveying mechanism for conveying a substrate to the first loading part and the processing part; the loading part comprises: a carrier loading part for loading a carrier; and a conveying part for conveying a substrate between the carrier loaded on the carrier loading part and the first loading part; and the conveying part of the loading part comprises a first conveying mechanism, the first conveying mechanism performs at least one of a supply action and a recovery action, the supply action is to convey a substrate from the carrier loaded on the carrier loading part to the first loading part, and the recovery action is to convey a substrate from the first loading part to the carrier loaded on the carrier loading part; the first conveying mechanism further performs an inter-layer conveying action, conveying a substrate between two first loading parts arranged on different levels.

[0014] The first conveying mechanism of the loading section performs at least one of a supplying action and a recovering action. When the first conveying mechanism performs a supplying action, the main conveying mechanism can directly obtain the substrate loaded on the first loading section by the first conveying mechanism. Therefore, the substrate can be efficiently transported between the first conveying mechanism and the main conveying mechanism. Therefore, the processing capacity of the substrate processing device can be appropriately increased. When the first conveying mechanism performs a recovering action, the first conveying mechanism can directly obtain the substrate loaded on the first loading section by the main conveying mechanism. Therefore, the substrate can be efficiently transported between the first conveying mechanism and the main conveying mechanism. Therefore, the processing capacity of the substrate processing device can be appropriately increased.

[0015] The first transport mechanism then performs inter-layer transport. Therefore, it is not necessary to separately provide a transport mechanism that is dedicated to transporting substrates between two different layers (e.g., the transfer arm (30) of Japanese Patent Publication No. 2012-33863). More specifically, in addition to the first transport mechanism, it is also not necessary to provide a transport mechanism that is dedicated to inter-layer transport. Therefore, the occupied area (installation area) of the substrate processing device can be appropriately reduced.

[0016] As described above, according to the substrate processing apparatus, the footprint of the substrate processing apparatus can be reduced and the processing throughput of the substrate processing apparatus can be increased.

[0017] In the substrate processing apparatus, preferably, at least one of the processing units in the layer performs a first process on a substrate, and at least one of the processing units in the other layer performs a second process different from the first process on the substrate, and the first transport mechanism transports the substrate between the first loading unit in the layer performing the first process and the first loading unit in the layer performing the second process. The first process and the second process can be efficiently performed on the substrate.

[0018] In the substrate processing apparatus, the first process preferably includes a first pre-exposure process performed before the exposure process, and the second process preferably includes a second pre-exposure process performed before the exposure process and different from the first pre-exposure process. The first pre-exposure process and the second pre-exposure process can be efficiently performed on the substrate.

[0019] In the substrate processing apparatus, the first processing preferably includes a first liquid processing, and the second processing preferably includes a second liquid processing different from the first liquid processing. The first liquid processing and the second liquid processing can be efficiently performed on the substrate.

[0020] In the substrate processing device, preferably, the first process includes an anti-reflection film forming process for forming an anti-reflection film on a substrate, a resist film forming process for forming a resist film on a substrate, a protective film forming process for forming a protective film for protecting the resist film on the substrate, a developing process for developing the substrate and a part of a cleaning process for cleaning the substrate, and the second process includes another part of the anti-reflection film forming process, the resist film forming process, the protective film forming process, the developing process and the cleaning process. In other words, in the substrate processing apparatus, it is preferred that the first process includes one or more and four or less of the antireflection film forming process, the resist film forming process, the protective film forming process, the developing process, and the cleaning process, and the second process includes one or more and four or less of the antireflection film forming process, the resist film forming process, the protective film forming process, the developing process, and the cleaning process. When the first process includes the antireflection film forming process, the second process does not include the antireflection film forming process. When the first process includes the resist film forming process, the second process does not include the resist film forming process. When the first process includes the protective film forming process, the second process does not include the protective film forming process. When the first process includes the developing process, the second process does not include the developing process. When the first process includes the cleaning process, the second process does not include the cleaning process. For example, the first process may include the antireflection film forming process and the second process may include the resist film forming process. In this case, the anti-reflection film treatment and the resist film forming treatment can be efficiently performed on the substrate. For example, the first treatment may include the anti-reflection film treatment, the resist film forming treatment, and the protective film forming treatment, and the second treatment may include the developing treatment. In this case, the anti-reflection film treatment, the resist film forming treatment, the protective film forming treatment, and the developing treatment can be efficiently performed on the substrate. In this way, at least two of the anti-reflection film treatment, the resist film forming treatment, the protective film forming treatment, the developing treatment, and the cleaning treatment can be efficiently performed on the substrate.

[0021] In the substrate processing apparatus, it is preferred that the first processing includes a processing of forming an antireflection film on the substrate, the second processing includes a processing of forming a resist film on the substrate, and the first transport mechanism transports the substrate from the first loading section of the layer where the first processing is performed to the first loading section of the layer where the second processing is performed. After the antireflection film forming processing is performed on the substrate, the resist film forming processing can be performed on the substrate. Furthermore, the antireflection film forming processing and the resist film forming processing can be performed on the substrate efficiently.

[0022] In the substrate processing apparatus, it is preferred that the first processing includes a processing of forming an antireflection film on a substrate and a processing of forming a resist film on a substrate, the second processing includes a processing of forming a protective film on a substrate to protect the resist film, and the first transport mechanism transports the substrate from the first loading section of the layer where the first processing is performed to the first loading section of the layer where the second processing is performed. After the antireflection film forming processing and the resist film forming processing are performed on the substrate, the protective film forming processing can be performed on the substrate. Furthermore, the antireflection film forming processing, the resist film forming processing, and the protective film forming processing can be performed on the substrate efficiently.

[0023] In the substrate processing device, it is preferred that the processing section of the layer that performs the second processing further performs a processing for developing the substrate, and the conveying section of the loading section conveys the substrate from the first loading section of the layer that performs the second processing to the carrier loaded on the carrier loading section. The "processing section of the layer that performs the second processing" may also be replaced with "the processing section that performs the second processing". The processing section that performs the second processing further performs a developing processing. Therefore, the substrate can be efficiently developed. Furthermore, the substrate that has been developed can be efficiently conveyed to the carrier. Here, the second processing preferably does not include a processing for developing the substrate. The second processing preferably does not include a post-exposure processing performed after the exposure processing.

[0024] In the substrate processing apparatus, the transfer unit of the loading unit preferably transfers a substrate from the carrier placed on the carrier placement unit to the first placement unit at the stage where the first process is performed. The substrate can be efficiently transferred from the carrier to the stage where the first process is performed.

[0025] In the substrate processing apparatus, it is preferred that the number of the layers for performing the first processing is 2 or more, and the number of the layers for performing the second processing is 2 or more. The first processing can be performed on a substrate in 2 or more layers. The second processing can be performed on a substrate in 2 or more layers. Therefore, the processing capacity of the substrate processing apparatus can be appropriately increased.

[0026] In the substrate processing device, it is preferred that the processing unit of one or more layers other than the layer for performing the first processing and the layer for performing the second processing performs a third processing on the substrate, the third processing includes a processing for developing the substrate, and the conveying unit of the loading unit conveys the substrate from the first loading unit of the layer for performing the third processing to the carrier carried on the carrier loading unit. It is also possible to replace "one or more layers other than the layer for performing the first processing and the layer for performing the second processing" with "one or more layers other than the layer for performing the first processing and the layer for performing the second processing". The processing unit of one or more layers other than the layer for performing the first processing and the layer for performing the second processing performs the third processing including the developing processing. Therefore, the substrate can be efficiently developed. Furthermore, the substrate that has been developed can be efficiently conveyed to the carrier.

[0027] In the substrate processing apparatus, the number of the stages where the third process is performed is preferably 2 or more. The third process can be performed on the substrate in 2 or more stages. Therefore, the processing throughput of the substrate processing apparatus can be suitably increased.

[0028] In the substrate processing device, it is preferred that each of the layers has a second loading unit for loading a substrate, the substrate processing device has an interface unit, the interface unit has a conveying unit for conveying a substrate between the second loading unit and an exposure machine, and the conveying unit of the interface unit does not convey a substrate between two second loading units arranged at different layers. The conveying unit of the interface unit does not perform inter-layer conveying action. Here, the inter-layer conveying action for the conveying unit of the interface unit is to convey a substrate between two second loading units arranged at different layers without passing through an exposure machine. Therefore, the conveying unit of the interface unit can efficiently convey a substrate between a layer and an exposure machine.

[0029] In the substrate processing device, it is preferred that the first loading section includes: a first transport loading section dedicated to the transport section of the loading section for loading substrates; and a first return loading section dedicated to the main transport mechanism for loading substrates. Since the transport section of the loading section does not load the substrate on the first return loading section, the transporting action of the transport section of the loading section can be simplified. Therefore, the transport section of the loading section can more efficiently transport the substrate between the carrier and the layer. Similarly, since the main transport mechanism does not load the substrate on the first transport loading section, the transporting action of the main transport mechanism can be simplified. Therefore, the main transport mechanism can more efficiently transport the substrate.

[0030] In the substrate processing apparatus, it is preferred that the conveying section of the loading section simultaneously loads two substrates on the first conveying loading section, and the first conveying loading section is configured in such a manner that at least four substrates can be loaded on the first conveying loading section. At least four substrates can be loaded on the first conveying loading section. Therefore, the conveying section of the loading section can, for example, simultaneously load the first and second substrates on the first conveying loading section, and then simultaneously load the third and fourth substrates on the first conveying loading section. While the conveying section of the loading section loads the third and fourth substrates on the first conveying loading section, the main conveying mechanism can obtain the first and second substrates from the first conveying loading section. Therefore, thereafter, the conveying section of the loading section can load the fifth and sixth substrates on the first conveying loading section (for example, at the same position as the position where the first and second substrates are loaded). In this way, the conveying section of the loading section can smoothly repeat the action of loading the substrates on the first conveying loading section.

[0031] For example, the position of the first transport placement section for placing the first and second substrates is different from the position of the first transport placement section for placing the third and fourth substrates. Therefore, even if the transport section of the loader and the main transport mechanism contact the first transport placement section at the same time, there is no need to worry about the transport section of the loader placing the substrate on the first transport placement section interfering with the main transport mechanism taking the substrate from the first transport placement section.

[0032] In the substrate processing apparatus, it is preferred that the conveying unit of the loading unit simultaneously obtains two substrates from the first return loading unit, and the first return loading unit is configured so that at least four substrates can be loaded on the first return loading unit. At least four substrates can be loaded on the first return loading unit. Therefore, the conveying unit of the loading unit can simultaneously obtain the first and second substrates from the first return loading unit, and then simultaneously obtain the third and fourth substrates from the first return loading unit. While the conveying unit of the loading unit obtains the third and fourth substrates from the first return loading unit, the main conveying mechanism can load the fifth and sixth substrates on the first conveying loading unit (for example, at the same position as the position where the first and second substrates are loaded). Therefore, thereafter, the conveying unit of the loading unit can obtain the fifth and sixth substrates from the first return loading unit. In this way, the conveying unit of the loading unit can smoothly repeat the action of obtaining substrates from the first return loading unit.

[0033] For example, the position of the first return placement section for placing the third and fourth substrates is different from the position of the first return placement section for placing the fifth and sixth substrates. Therefore, even if the transport section of the loader and the main transport mechanism approach the first return placement section at the same time, there is no need to worry about the transport section of the loader that takes the substrate from the first return placement section interfering with the main transport mechanism that places the substrate on the first return placement section.

[0034] In the substrate processing apparatus, it is preferred that the first conveying mechanism performs one of the supply action and the recovery action and does not perform the other of the supply action and the recovery action, and the conveying section of the loading section is provided with a second conveying mechanism, which does not perform the one of the supply action and the recovery action and performs the other of the supply action and the recovery action. Since the conveying section of the loading section is provided with the second conveying mechanism, the conveying section of the loading section can more efficiently convey the substrate. The first conveying mechanism of the loading section performs one of the supply action and the recovery action, and the second conveying mechanism of the loading section performs the other of the supply action and the recovery action. Therefore, the conveying section of the loading section can appropriately perform both the supply action and the recovery action. Since the first conveying mechanism does not perform the other of the supply action and the recovery action, the action of the first conveying mechanism can be simplified. Since the second conveying mechanism does not perform one of the supply action and the recovery action, the action of the second conveying mechanism can also be simplified.

[0035] In the substrate processing apparatus, the second transport mechanism of the loading unit preferably further performs the inter-layer transport operation. Since both the first transport mechanism and the second transport mechanism perform the inter-layer transport operation, the substrate can be more efficiently transported between two different layers.

[0036] In the substrate processing device, it is preferred that the layer through which the substrate passes last among the layers is set as the final layer, the conveying part of the loading part conveys the substrate from the first loading part of the final layer to the carrier loaded on the carrier loading part, and the substrate processing device comprises: a carrier retreating part for loading the carrier at a position retreated from the carrier loading part; and a carrier conveying part for conveying the carrier between the carrier loading part and the carrier retreating part; the control part detects the distribution action of the main conveying mechanism of the final layer for loading the substrate on the first loading part of the final layer, and determines the timing of the action of the carrier conveying part based on the detection result of the distribution action of the main conveying mechanism of the final layer. The first loading part of the final layer is the position where the substrate is loaded last before the substrate is loaded into the carrier. The control part detects the distribution action of the main conveying mechanism provided in the final layer. According to the detection result of the distribution action of the main conveying mechanism of the final layer, the time when the main conveying mechanism of the final layer actually loads the substrate on the first loading part can be specified. The control unit determines the timing of the action of the carrier conveying unit based on the detection result of the dispensing action of the main conveying mechanism of the final layer. Therefore, the carrier conveying unit can always convey the carrier at an appropriate time. As a result, the conveying unit of the loading unit can smoothly perform the recovery action. For example, there is no need to worry about the delay of the recovery action performed by the conveying unit of the loading unit due to the conveyance of the carrier by the carrier conveying unit. In this way, the recovery action performed by the conveying unit of the loading unit and the conveyance action of the carrier by the carrier conveying unit can be appropriately combined in time.

[0037] In the substrate processing apparatus, it is preferred that the control unit determines whether a predetermined substrate to be carried into the carrier loaded on the carrier retreating unit is loaded on the first loading unit of the final level based on the detection result of the dispensing operation of the main transport mechanism of the final level, and when the control unit determines that the predetermined substrate to be carried into the carrier loaded on the carrier retreating unit is loaded on the first loading unit of the final level, the control unit starts an operation of the carrier transport unit to transport the carrier from the carrier retreating unit to the carrier loading unit. Before the transport unit of the loading unit starts a recovery operation, the carrier transport unit can reliably load the predetermined carrier to be carried into the substrate on the carrier loading unit. As a result, the transport unit of the loading unit can smoothly perform the recovery operation.

[0038] The present invention is a substrate processing method, comprising: a supply step, transporting a substrate from a carrier to at least one of a plurality of layers; a processing step, processing the substrate while transporting it in the layer; an interlayer transport step, transporting the substrate between two different layers; and a recovery step, transporting the substrate from at least one of the layers to the carrier; and at least any one of the supply step and the recovery step is performed by the same transport mechanism as the interlayer transport step.

[0039] At least one of the supply step and the recovery step is performed by one conveying mechanism. When the supply step is performed by one conveying mechanism, the substrate can be efficiently transferred from the carrier to the layer. Therefore, the processing step can be performed efficiently. Therefore, the processing volume of the substrate processing can be appropriately increased. When the recovery step is performed by one conveying mechanism, the substrate can be efficiently transferred from the layer to the carrier. Therefore, the processing step can be performed efficiently. Therefore, the processing volume of the substrate processing can be appropriately increased.

[0040] The inter-layer transfer step is performed by a transfer mechanism that performs at least one of the supply step and the recovery step. That is, the same transfer mechanism performs the inter-layer transfer step in addition to performing at least one of the supply step and the recovery step. Therefore, it is not necessary to separately provide a transfer mechanism that is specifically used to transfer the substrate between two different layers (for example, the transfer arm (30) of Japanese Patent Laid-Open No. 2012-33863). Therefore, the space used to perform the substrate processing method can be appropriately reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] For the purpose of illustrating the invention, several aspects currently considered to be preferred are shown in the drawings, but it should be understood that the invention is not limited to the structures and measures shown in the drawings.

[0042] Figure 1 It is a top view of the substrate processing apparatus according to the first embodiment.

[0043] Figure 2 It is a left side view showing the left structure of the substrate processing apparatus.

[0044] Figure 3 It is a left side view showing the structure of the central portion of the substrate processing apparatus in the width direction.

[0045] Figure 4 It is a right side view showing the right structure of the substrate processing apparatus.

[0046] Figure 5 It is a front view of the loading section.

[0047] Figure 6 It is a front view showing the internal structure of the loading section.

[0048] Figure 7 This is the front view of the processing block.

[0049] Fig. 8A , 8B It is an enlarged side view of the first loading part.

[0050] Fig. 9 It is a rear view of the front part of the interface part.

[0051] Fig.10 It is a rear view of the rear part of the interface part.

[0052] Fig.11 It is a diagram schematically showing the circulation operation of the first transport mechanism of the loading section.

[0053] Fig.12 It is a diagram schematically showing the circulation operation of the second transport mechanism of the loading section.

[0054] Fig.13 It is a diagram schematically showing an outline of a substrate transport path.

[0055] Fig.14 It is a diagram schematically showing elements of the substrate processing apparatus 1 through which a substrate passes.

[0056] Figures 15A-15D It is a side view of the first loading section, the first transport mechanism of the loading section, and the main transport mechanism.

[0057] Figures 16A-16C It is a diagram schematically showing the operation of the stacker unit and the loader unit.

[0058] Fig.17 It is a top view of the substrate processing apparatus according to the second embodiment.

[0059] Fig.18 It is a left side view showing the left structure of the substrate processing apparatus.

[0060] Fig.19A , 19B 19C is a diagram schematically showing an overview of the substrate transport path.

[0061] Fig. 20 It is a left side view showing the left structure of the substrate processing apparatus according to the first modified embodiment.

[0062] Fig.21A , 21B 21C is a diagram schematically showing an overview of a substrate transport path.

[0063] Fig.22A , 22B 22C is a diagram schematically showing an overview of the substrate transport path.

[0064] Fig.23 It is a left side view showing the left structure of the substrate processing apparatus according to the second variation embodiment.

[0065] Fig.24A , 24B 24C is a diagram schematically showing an overview of the substrate transport path.

[0066] Fig.25 It is a left side view showing the left structure of the substrate processing apparatus according to the third variation embodiment.

[0067] Fig.26A , 26B 26C is a diagram schematically showing an overview of the substrate transport path.

[0068] Fig. 27 It is a left side view showing the left structure of the substrate processing apparatus according to the fourth variation embodiment.

[0069] Fig.28A , 28B 28C is a diagram schematically showing an overview of the substrate transport path. DETAILED DESCRIPTION

[0070] Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings.

[0071] [First embodiment]

[0072] <Overview of Substrate Processing Apparatus>

[0073] Figure 1 1 is a plan view of a substrate processing apparatus according to the first embodiment. The substrate processing apparatus 1 according to the first embodiment performs a series of processes on a substrate (eg, a semiconductor wafer).

[0074] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell. The substrate W has a relatively thin flat plate shape. The substrate W has a generally circular shape when viewed from above.

[0075] The substrate processing apparatus 1 includes a stacker unit 11, a loader unit 21, a processing block 31, and an interface unit 71. The stacker unit 11 stores a plurality of carriers C. The stacker unit 11 transfers the carriers C to the loader unit 21. The carriers C contain a plurality of substrates W. The carriers C are, for example, FOUPs (front opening unified pods).

[0076] The loader 21 transfers the substrate W from the carrier C to the processing block 31 . The loader 21 transfers the substrate W from the carrier C to the processing block 31 .

[0077] The processing block 31 processes the substrate W while conveying the substrate W.

[0078] The interface unit 71 transfers the substrate W between the processing block 31 and the exposure unit EXP. The exposure unit EXP is a separate entity from the substrate processing apparatus 1. The exposure unit EXP is not an element of the substrate processing apparatus 1. The exposure unit EXP is an external device of the substrate processing apparatus 1. The exposure unit EXP performs exposure processing on the substrate W.

[0079] The stacker unit 11, the loader unit 21, the processing block 31, and the interface unit 71 are arranged in a row. The stacker unit 11 is connected to the loader unit 21. The loader unit 21 is connected to the processing block 31. The processing block 31 is connected to the interface unit 71. The interface unit 71 is connected to the exposure machine EXP.

[0080] The direction in which the stacker section 11, the loading section 21, the processing block 31 and the interface section 71 are arranged is called the "front-to-back direction X". The front-to-back direction X is horizontal. In the front-to-back direction X, the direction from the interface section 71 toward the stacker section 11 is called the "front". The direction opposite to the front is called the "rear". The horizontal direction orthogonal to the front-to-back direction X is called the "width direction Y" or the "side". One direction of the "width direction Y" is appropriately called the "right". The direction opposite to the right is called the "left". The vertical direction is called the "up-down direction Z". The up-down direction Z is orthogonal to the front-to-back direction X and to the width direction Y. In each figure, the front, back, right, left, top and bottom are appropriately shown for reference.

[0081] The stacker unit 11 , the loader unit 21 , the processing block 31 , and the interface unit 71 are described below.

[0082] <Stacker Section 11>

[0083] Reference Figure 1-4 . Figure 2 It is a left side view showing the left structure of the substrate processing apparatus 1. Figure 3 1 is a left side view showing the configuration of the central portion of the substrate processing apparatus 1 in the width direction Y. FIG. Figure 4 It is a right side view showing the right structure of the substrate processing apparatus 1.

[0084] The stacker unit 11 includes an outer wall 12 and a plurality of (for example, two) racks 13. The outer wall 12 is disposed on the front surface of the stacker unit 11. The racks 13 are supported by the outer wall 12. The racks 13 are disposed between the outer wall 12 and the loading unit 21. The racks 13 are disposed behind the outer wall 12. The racks 13 are arranged in a row in the up-down direction Z.

[0085] The rack 13 has a substantially horizontal plate shape. A plurality of carriers C are placed on the rack 13. The rack 13 extends in the width direction Y. The length of the rack 13 in the width direction Y is greater than the length of the rack 13 in the front-rear direction X. The carriers C are placed on the rack 13 in a row in the width direction Y.

[0086] According to the condition of the carrier C, the carrier C can be classified into several types. For example, the carrier C can be classified into the carrier C that is transferred between the stacker section 11 and the external conveying mechanism (not shown) (referred to as "the former carrier C") and the other carriers C (referred to as "the latter carrier C"). Here, the external conveying mechanism is an external machine of the substrate processing device 1. The external conveying mechanism is, for example, OHT (Overhead Hoist Transfer). The former carrier C can be further classified into the carrier C received by the stacker section 11 from the external conveying mechanism and the carrier C transferred to the external conveying mechanism by the stacker section 11. The latter carrier C can be further classified into the carrier C that accommodates the unprocessed substrate W, the carrier C that does not accommodate the substrate W, and the carrier C that accommodates the processed substrate W.

[0087] The carrier C may also be placed at different positions of the rack 13 according to the conditions or classifications of the carriers C. For example, the rack 13 may also include a loading port specifically for carrying the former carrier C. The loading port is arranged at a position accessible to the external transport mechanism. The loading port may also include an input loading port and an output loading port. The carrier C received by the stacker unit 11 from the external transport mechanism is placed at the input loading port. The carrier C transferred to the external transport mechanism by the stacker unit 11 is placed at the output loading port. For example, the rack 13 may also include a storage unit specifically for carrying the latter carrier C. The storage unit is preferably arranged at a position that is inaccessible to the external transport mechanism. The storage unit may also include a first storage unit specifically for carrying the carrier C that accommodates the unprocessed substrate W. The storage unit may also include a second storage unit specifically for carrying the carrier C that does not accommodate the substrate W. The storage unit may also include a third storage unit specifically for carrying the carrier C that accommodates the processed substrate W.

[0088] The stacker unit 11 includes a carrier transport mechanism 15. The carrier transport mechanism 15 transports the carrier C between the rack 13 and the loading unit 21. The carrier transport mechanism 15 further transports the carrier C between different positions of the rack 13. For example, the carrier transport mechanism 15 transports the carrier C between the loading port and the storage unit. The carrier transport mechanism 15 is arranged between the rack 13 and the loading unit 21. The carrier transport mechanism 15 can approach the rack 13. The carrier transport mechanism 15 places the carrier C on the rack 13. The carrier transport mechanism 15 obtains the carrier C from the rack 13.

[0089] The carrier conveying mechanism 15 includes a rail 16a, a support 16b, a first lifting part 16c, a first arm 16d, and a first holding part 16e. The rail 16a extends in the width direction Y. The support 16b is supported on the rail 16a. The support 16b extends in the up-down direction Z. The support 16b can move in the width direction Y relative to the rail 16a. The first lifting part 16c is supported on the support 16b. The first lifting part 16c can move in the up-down direction Z relative to the support 16b. The first arm 16d is supported on the first lifting part 16c. The first arm 16d has a base end connected to the first lifting part 16c. The first arm 16d has a front end. The front end of the first arm 16d can rotate in the horizontal direction relative to the first lifting part 16c, and can move forward and backward in the horizontal direction relative to the first lifting part 16c. The first arm 16d is, for example, a multi-jointed arm. The first holding portion 16e is supported by the front end portion of the first arm portion 16d. The first holding portion 16e holds one carrier C. Specifically, the first holding portion 16e holds the upper portion of the carrier C.

[0090] The carrier conveying mechanism 15 further includes a second lifting part 16f, a second arm part 16g, and a second holding part 16h. The second lifting part 16f, the second arm part 16g, and the second holding part 16h have structures substantially the same as the first lifting part 16c, the first arm part 16d, and the first holding part 16e, respectively. The second lifting part 16f, the second arm part 16g, and the second holding part 16h are arranged below the first lifting part 16c, the first arm part 16d, and the first holding part 16e. The second lifting part 16f, the second arm part 16g, and the second holding part 16h can move in the up-down direction Z relative to the support 16b. The second lifting part 16f can move independently from the first lifting part 16c. The second arm part 16g can move independently from the first arm part 16d. The second holding part 16h can move independently from the first holding part 16e.

[0091] The carrier transport mechanism 15 is an example of a carrier transport unit of the present invention.

[0092] <Loading Unit 21>

[0093] Reference Figure 1-5 . Figure 5 It is a front view of the loading section 21. The loading section 21 includes carrier loading sections 22A1, 22A2, 22B1, and 22B2. One carrier C is loaded on each of the carrier loading sections 22A1, 22A2, 22B1, and 22B2.

[0094] The carrier placement parts 22A1, 22A2, 22B1, and 22B2 are arranged behind the carrier conveying mechanism 15. The carrier conveying mechanism 15 can approach the carrier placement parts 22A1, 22A2, 22B1, and 22B2. The carrier conveying mechanism 15 places the carrier C on the carrier placement parts 22A1, 22A2, 22B1, and 22B2. The carrier conveying mechanism 15 obtains the carrier C from the carrier placement parts 22A1, 22A2, 22B1, and 22B2.

[0095] The carrier loading sections 22A1 and 22A2 are arranged so as to be aligned in the vertical direction Z. The carrier loading section 22A1 is arranged above the carrier loading section 22A2. The carrier loading sections 22B1 and 22B2 are arranged so as to be aligned in the vertical direction Z. The carrier loading section 22B1 is arranged above the carrier loading section 22B2. The carrier loading sections 22A1 and 22B1 are arranged so as to be aligned in the width direction Y. The carrier loading section 22A1 is arranged to the right of the carrier loading section 22B1. The carrier loading section 22A1 is arranged at a height position substantially the same as that of the carrier loading section 22B1. The carrier loading sections 22A2 and 22B2 are arranged so as to be aligned in the width direction Y. The carrier loading section 22A2 is arranged to the right of the carrier loading section 22B2. The carrier loading section 22A2 is arranged at a height position substantially the same as that of the carrier loading section 22B2.

[0096] Hereinafter, when the carrier placement sections 22A1 and 22A2 are not distinguished, they are described as “carrier placement section 22A”. When the carrier placement sections 22B1 and 22B2 are not distinguished, they are described as “carrier placement section 22B”.

[0097] The rack 13 places the carrier C at a position withdrawn from the carrier placing portions 22A and 22B. The rack 13 corresponds to the carrier withdrawing portion of the present invention.

[0098] Reference Figure 1-4 、6. Figure 6 2 is a front view showing the internal structure of the loading section 21. The loading section 21 includes a transfer space 23. The transfer space 23 is arranged behind the carrier placement sections 22A and 22B.

[0099] The transfer space 23 has a substantially box shape. The transfer space 23 is substantially rectangular in plan view, side view, and front view.

[0100] The loading section 21 includes a frame 24. The frame 24 is provided as a framework (skeleton) of the transfer space 23. The frame 24 defines the shape of the transfer space 23. The frame 24 is made of metal, for example.

[0101] The loader 21 includes a transfer unit 25 . The transfer unit 25 is provided in the transfer space 23 . The transfer unit 25 transfers the substrate W between the carrier C on the carrier placement units 22A and 22B and the processing block 31 . The transfer unit 25 cannot approach the carrier C on the rack 13 .

[0102] The transport unit 25 includes a first transport mechanism 26 and a second transport mechanism 27. The first transport mechanism 26 and the second transport mechanism 27 transport the substrate W, respectively.

[0103] The first conveying mechanism 26 and the second conveying mechanism 27 are arranged in a row in the width direction Y. The first conveying mechanism 26 is arranged on the right side of the second conveying mechanism 27. The first conveying mechanism 26 is arranged at a height position substantially the same as that of the second conveying mechanism 27. The first conveying mechanism 26 is arranged behind the carrier loading section 22A. The second conveying mechanism 27 is arranged behind the carrier loading section 22B.

[0104] The carrier loading section 22A is disposed in an area accessible to the first conveying mechanism 26. The carrier loading section 22A is disposed outside an area accessible to the second conveying mechanism 27. The carrier loading section 22B is disposed in an area accessible to the second conveying mechanism 27. The carrier loading section 22B is disposed outside an area accessible to the first conveying mechanism 26.

[0105] The first conveying mechanism 26 includes a support 28a, a lifting part 28b, a rotating part 28c, and holding parts 28d and 28e. The support 28a is supported by the frame 24. The support 28a is fixed to the frame 24. The support 28a cannot move relative to the frame 24. The support 28a extends in the vertical direction Z. The lifting part 28b is supported by the support 28a. The lifting part 28b can move relative to the support 28a in the vertical direction Z. The lifting part 28b cannot move in the horizontal direction relative to the support 28a. The rotating part 28c is supported by the lifting part 28b. The rotating part 28c can rotate relative to the lifting part 28b around an axis parallel to the vertical direction Z. The rotating part 28c cannot move in the horizontal direction relative to the lifting part 28b. The holding parts 28d and 28e are supported by the rotating part 28c. The holding parts 28d and 28e can move forward and backward in the horizontal direction relative to the rotating part 28c. The holding parts 28d and 28e can move forward and backward independently of each other. The holding portions 28d and 28e are respectively in contact with the substrate W. The holding portions 28d and 28e each hold one substrate W in a horizontal posture.

[0106] The second conveying mechanism 27 has substantially the same structure and shape as the first conveying mechanism 26 of the loading section 21 except for being bilaterally symmetrical. That is, the second conveying mechanism 27 includes a support column 28a, a lifting section 28b, a rotating section 28c, and holding sections 28d and 28e.

[0107] Thus, in this specification, when different elements have the same structure, the structure is denoted by a common reference numeral and detailed description thereof is omitted.

[0108] <Processing Block 31>

[0109] Reference Figure 1-4 、7. Figure 7 3 is a front view of the processing block 31. The processing block 31 has a substantially box shape. The processing block 31 is substantially rectangular in top, side and front views.

[0110] The processing block 31 includes a frame 32. The frame 32 is provided as a framework (skeleton) of the processing block 31. The frame 32 defines the shape of the processing block 31. The frame 32 is made of metal, for example.

[0111] Reference Figure 7 The processing block 31 includes a plurality of (e.g., seven) levels 33 arranged in a vertical direction Z. The plurality of levels 33 overlap each other in a plan view. Each level 33 processes the substrate W while conveying the substrate W. Each level 33 can operate synchronously. Each level 33 can operate independently of each other.

[0112] The processing block 31 includes a plurality of partition walls 34. The partition walls 34 are supported by the frame 32. The partition walls 34 have a horizontal plate shape. The plurality of partition walls 34 are arranged in a row in the vertical direction Z. The partition walls 34 divide each level 33. The partition wall 34 is arranged between two adjacent levels 33 in the vertical direction Z. The partition wall 34 separates two adjacent levels 33 in the vertical direction Z. Furthermore, the partition wall 34 is also arranged below the lowest level 33. The partition wall 34 functions as a bottom wall of the level 33.

[0113] The plurality of layers 33 each have substantially the same elements. The structure and shape of the elements included in the layers 33 are substantially the same among the plurality of layers 33. The arrangement of the elements included in the layers 33 is substantially the same among the plurality of layers 33. The elements included in each layer 33 are described below.

[0114] Reference Figure 1 , 7 Each level 33 has a transport space 35. The transport space 35 is arranged in the center of the level 33 in the width direction Y when viewed from above. The transport space 35 extends in the front-rear direction X. The transport space 35 has a front portion and a rear portion. The front portion of each transport space 35 is connected to the transport space 23 of the loading section 21. The front portion of each transport space 35 is arranged on the left and rear of the first transport mechanism 26. The front portion of each transport space 35 is arranged on the left and rear of the second transport mechanism 27.

[0115] Each of the levels 33 includes one main transport mechanism 36. The main transport mechanism 36 is provided in the transport space 35. The main transport mechanism 36 transports the substrate W.

[0116] Reference Figure 1 , 3 The main transport mechanism 36 includes pillars 37a, 37b, a lifting part 37c, a horizontal moving part 37d, a rotating part 37e, and holding parts 37f, 37g. The pillars 37a, 37b are supported by the frame 32. The pillars 37a, 37b are fixed to the frame 32. The pillars 37a, 37b cannot move relative to the frame 32. The pillars 37a, 37b extend in the up-down direction Z. The pillars 37a, 37b are arranged in a row in the front-back direction X. The pillar 37a is arranged in the front part of the transport space 35. The pillar 37b is arranged in the rear part of the transport space 35. More specifically, the pillar 37a is arranged in the left part of the front part of the transport space 35. The pillar 37b is arranged in the left part of the rear part of the transport space 35. The lifting part 37c is supported by the pillars 37a, 37b. The lifting part 37c can move in the up-down direction Z relative to the pillars 37a, 37b. The lifting part 37c extends in the front-back direction X. The lifting part 37c has a front end and a rear end. The front end of the lifting part 37c is connected to the support 37a. The rear end of the lifting part 37c is connected to the support 37b. The horizontal moving part 37d is supported by the lifting part 37c. The horizontal moving part 37d can move in the horizontal direction (specifically, the front-back direction X) relative to the lifting part 37c. The rotating part 37e is supported by the horizontal moving part 37d. The rotating part 37e can move in the horizontal direction (specifically, the front-back direction X) integrally with the horizontal moving part 37d. The rotating part 37e can rotate around an axis parallel to the up-down direction Z relative to the horizontal moving part 37d. The holding parts 37f and 37g are supported by the rotating part 37e. The holding parts 37f and 37g can move forward and backward in the horizontal direction relative to the rotating part 37e. The holding parts 37f and 37g can move forward and backward independently of each other. The holding parts 37f and 37g are in contact with the substrate W respectively. The holding portions 37f and 37g each hold one substrate W in a horizontal posture.

[0117] Reference Figure 1 , 7 Each of the layers 33 includes a processing unit 41. The processing unit 41 processes the substrate W.

[0118] The processing section 41 is disposed on the side of the transport space 35 . The processing section 41 and the transport space 35 are arranged in the width direction Y. The processing section 41 and the transport space 35 are in contact with each other.

[0119] The processing section 41 is arranged on the side of the main transport mechanism 36. The processing section 41 and the main transport mechanism 36 are arranged in the width direction Y. The processing section 41 and the main transport mechanism 36 arranged on the same level 33 are arranged at substantially the same height position. The processing section 41 is arranged at a position accessible to the main transport mechanism 36 arranged on the same level 33 as the processing section 41.

[0120] The processing unit 41 includes a liquid processing unit 42 and a heat processing unit 47. The liquid processing unit 42, the transport space 35, and the heat processing unit 47 are arranged in the width direction Y. The transport space 35 is arranged between the liquid processing unit 42 and the heat processing unit 47. The liquid processing unit 42 is arranged on the left side of the transport space 35. The heat processing unit 47 is arranged on the right side of the transport space 35. The liquid processing unit 42 performs liquid processing on the substrate W. The liquid processing is a processing performed by supplying a processing liquid to the substrate W. The heat processing unit 47 performs heat processing on the substrate W.

[0121] The liquid processing section 42 of each layer 33 includes a plurality of (e.g., three) liquid processing units 43. All liquid processing units 43 included in one liquid processing section 42 are arranged at substantially the same height. The liquid processing units 43 are arranged in a row in the front-rear direction X. Each liquid processing unit 43 is arranged at a position connected to the transfer space 35.

[0122] Each of the levels 33 includes a chamber 45 . The chamber 45 accommodates the liquid processing unit 43 .

[0123] The liquid processing unit 43 includes a rotating holding part 44a, a nozzle 44b, and a cup 44c. The rotating holding part 44a is arranged at a position accessible to the main transport mechanism 36. The rotating holding part 44a holds a substrate W in a horizontal position. The rotating holding part 44a can rotate the held substrate W around an axis parallel to the up-down direction Z. The nozzle 44b sprays a processing liquid onto the substrate W. The nozzle 44b is movably provided at a spraying position and a retreating position. The spraying position is a position above the substrate W held by the rotating holding part 44a. When the nozzle 44b is located at the spraying position, the nozzle 44b overlaps with the substrate W held by the rotating holding part 44a in a plan view. When the nozzle 44b is located at the spraying position, the nozzle 44b sprays the processing liquid onto the substrate W. When the nozzle 44b is located at the retreating position, the nozzle 44b does not overlap with the substrate W held by the rotating holding part 44a in a plan view. When the nozzle 44b is located at the retreat position, the nozzle 44b does not spray the processing liquid to the substrate W. When the nozzle 44b is located at the retreat position, the main transport mechanism 36 is allowed to approach the rotating holding part 44a. The cup 44c recovers the processing liquid. The cup 44c has a substantially cylindrical shape centered on an axis parallel to the up-down direction Z. The cup 44c can accommodate the substrate W held by the rotating holding part 44a and the rotating holding part 44a. The cup 44c surrounds the side of the substrate W held by the rotating holding part 44a.

[0124] Reference Figure 4 The heat treatment section 47 of each layer 33 includes a plurality of (e.g., 12) heat treatment units 48. The heat treatment units 48 are arranged in a matrix in a side view. For example, the heat treatment units 48 are arranged in four rows in the front-to-back direction X and in three stages in the up-down direction Z. Each heat treatment unit 48 is arranged at a position connected to the conveying space 35.

[0125] Reference Figure 1 , 7 . The heat treatment unit 48 includes a first plate 49a. The first plate 49a is arranged at a position accessible to the main transport mechanism 36. The first plate 49a has a substantially disc shape. The first plate 49a has a substantially horizontal upper surface. A substrate W is arranged on the upper surface of the plate 49a. The heat treatment unit 48 includes a first temperature adjustment unit (not shown). The first temperature adjustment unit is mounted on the first plate 49a. The first temperature adjustment unit adjusts the first plate 49a to a first temperature. The first plate 49a adjusts the substrate W to a first temperature. The first plate 49a cools the substrate W, for example.

[0126] The heat treatment unit 48 may also include a second plate 49b. The second plate 49b is disposed on the side of the first plate 49a. The second plate 49b is disposed at a height substantially the same as that of the first plate 49a. The second plate 49b is disposed at a position that is inaccessible to the main conveying mechanism 36. The second plate 49b is disposed at a position farther from the main conveying mechanism 36 than the first plate 49a. The second plate 49b is, for example, disposed on the right side of the first plate 49a. When the heat treatment unit 48 includes the second plate 49b, it includes a local conveying mechanism and a second temperature adjustment unit, which are not shown. The local conveying mechanism conveys the substrate W between the first plate 49a and the second plate 49b. The second temperature adjustment unit is mounted on the second plate 49b. The second temperature adjustment unit adjusts the second plate 49b to a second temperature. The second plate 49b adjusts the substrate W to a second temperature. The second temperature is, for example, higher than the first temperature. The second plate 49b, for example, heats the substrate W.

[0127] Reference Figure 1 , 3 Each of the layers 33 includes a first mounting portion 51 . A substrate W is mounted on the first mounting portion 51 .

[0128] The first loading section 51 is arranged between the conveying section 25 of the loading section 21 and the main conveying mechanism 36 of each level 33. Specifically, the first loading section 51 is arranged behind and to the left of the first conveying mechanism 26. The first loading section 51 is arranged behind and to the right of the second conveying mechanism 27. The first loading section 51 is arranged at a position accessible to the first conveying mechanism 26 and the second conveying mechanism 27, respectively. The first loading section 51 is arranged in front of the main conveying mechanism 36. The first loading section 51 and the main conveying mechanism 36, which are arranged at the same level 33, are arranged at approximately the same height position. The first loading section 51 is arranged at a position accessible to the main conveying mechanism 36, which is arranged at the same level 33 as the first loading section 51.

[0129] The first loading section 51 is provided across the transfer space 35 of the stage 33 and the transfer space 23 of the loading section 21. Specifically, a portion of the first loading section 51 is disposed in front of the transfer space 35. The remaining portion of the first loading section 51 is disposed in the transfer space 23.

[0130] The transport unit 25 transports the substrate W between the carrier C placed on the carrier placing units 22A and 22B and the first placing unit 51 .

[0131] The first loading section 51 includes a first transport loading section 52. The first transport loading section 52 is used exclusively for the transport section 25 to load the substrate W. The main transport mechanism 36 does not load the substrate W on the first transport loading section 52. The main transport mechanism 36 mainly receives the substrate W from the first transport loading section 52. The transport section 25 does not receive the substrate W from the first transport loading section 52.

[0132] The first placement unit 51 includes a first return placement unit 53. The first return placement unit 53 is exclusively used by the main transport mechanism 36 to place the substrate W. The transport unit 25 does not place the substrate W on the first return placement unit 53. The transport unit 25 mainly receives the substrate W from the first return placement unit 53. The main transport mechanism 36 does not receive the substrate W from the first return placement unit 53.

[0133] The first transport placement portion 52 and the first return placement portion 53 are arranged side by side in the up-down direction Z. The first transport placement portion 52 overlaps with the first return placement portion 53 in a plan view.

[0134] The first transport placement section 52 of each stage 33 is configured to simultaneously place four substrates W on the first transport placement section 52. The first return placement section 53 of each stage 33 is configured to simultaneously place four substrates W on the first return placement section 53. This will be described in detail below.

[0135] Fig. 8A , 8B3 is an enlarged side view of the first loading section. The first loading section 51 provided in one level 33 includes eight loading units 54. One substrate W is loaded on one loading unit 54. The loading units 54 are arranged in a row in the vertical direction Z. The loading units 54 overlap each other in a plan view. Among the eight loading units 54, four loading units 54 belong to the first transport loading section 52. The remaining four loading units 54 belong to the first return loading section 53.

[0136] The loading unit 54 includes a loading plate 55a and a plurality of (for example, three) support pins 55b. The loading plate 55a is supported by at least one of the frame 24 of the loading portion 21 and the frame 32 of the processing block 31. The loading plate 55a has a substantially horizontal plate shape. The support pins 55b are supported by the loading plate 54. The support pins 55b extend in the up-down direction Z. The support pins 55b have an upper end and a lower end. The lower end of the support pin 55b is connected to the loading plate 55a. The upper ends of the support pins 55b are arranged at the same height position. The upper ends of the support pins 55b are in contact with the back surface of the substrate W. The support pins 55b support one substrate W. Thus, one substrate W is loaded on the loading unit 54 in a horizontal posture.

[0137] Reference Figure 1 , 3 Each of the layers 33 includes a second mounting portion 56 . A substrate W is mounted on the second mounting portion 56 .

[0138] The second placement portion 56 is disposed between the main transport mechanism 36 and the interface portion 71 .

[0139] The second loading section 56 is arranged behind the main conveying mechanism 36. The second loading section 56 provided on the same level 33 is arranged at substantially the same height position as the main conveying mechanism 36. The second loading section 56 is arranged at a position accessible to the main conveying mechanism 36 provided on the same level 33 as the second loading section 56.

[0140] The second placement section 56 is provided across the transfer space 35 of the stage 33 and the interface section 71. Specifically, a portion of the second placement section 56 is disposed at the rear portion of the transfer space 35. The remaining portion of the second placement section 56 is disposed at the interface section 71.

[0141] The second loading section 56 includes a second transport loading section 57 and a second return loading section 58. The second transport loading section 57 is used exclusively for the main transport mechanism 36 to load the substrate W. The interface section 71 does not load the substrate W on the second transport loading section 57. In particular, the interface section 71 receives the substrate W from the second transport loading section 57. The main transport mechanism 36 does not receive the substrate W from the second transport loading section 57. The second return loading section 58 is used exclusively for the interface section 71 to load the substrate W. The main transport mechanism 36 does not load the substrate W on the second return loading section 58. In particular, the main transport mechanism 36 receives the substrate W from the second return loading section 58. The interface section 71 does not receive the substrate W from the second return loading section 58.

[0142] The second transport placement portion 57 and the second return placement portion 58 are arranged side by side in the up-down direction Z. The second transport placement portion 57 overlaps with the second return placement portion 58 in a plan view.

[0143] The second transport placement section 57 of each stage 33 is configured so that four substrates W can be placed simultaneously on the second transport placement section 57. The second return placement section 58 of each stage 33 is configured so that four substrates W can be placed simultaneously on the second return placement section 58. This will be described in detail below.

[0144] The second loading section 56 has a structure and shape substantially the same as those of the first loading section 51. For example, the second loading section 56 provided in one level 33 includes eight loading units (not shown). One substrate W is loaded on one loading unit. The loading units are arranged in a row in the vertical direction Z. The loading units overlap each other in a plan view. Among the eight loading units, four loading units belong to the second transport loading section 57. The remaining four loading units belong to the second return loading section 58. The loading units of the second loading section 56 have a structure and shape substantially the same as those of the loading units 54 of the first loading section 51.

[0145] The main transport mechanism 36 transports the substrate W to the processing section 41, the first loading section 51, and the second loading section 56. More specifically, the main transport mechanism 36 transports the substrate W to the processing section 41, the first loading section 51, and the second loading section 56 provided at the same level 33 as the main transport mechanism 36. The main transport mechanism 36 does not transport the substrate W to the processing section 41, the first loading section 51, and the second loading section 56 provided at a level 33 different from that of the main transport mechanism 36.

[0146] Reference Figure 1 , 2The processing block 31 includes a pump chamber 61. The pump chamber 61 is arranged adjacent to the liquid processing section 42. More specifically, the pump chamber 61 and the liquid processing chamber 42 are arranged in the front-rear direction X. The pump chamber 61 is arranged behind the liquid processing section 42. The pump chamber 61 and the transport space 35 are arranged in the width direction Y. The pump chamber 61 is arranged on the right side of the transport space 35.

[0147] The pump chamber 61 is arranged at a position that does not overlap with the layer 33 in a plan view. More specifically, the pump chamber 61 does not overlap with the transfer space 35 and the processing unit 41 in a plan view. For example, the pump chamber 61 is not arranged below the layer 33. For example, the pump chamber 61 is not arranged below the transfer space 35. For example, the pump chamber 61 is not arranged below the processing unit 41. For example, the pump chamber 61 is not arranged below the liquid processing unit 42.

[0148] The area of ​​the pump chamber 61 in a plan view is relatively small. The length of the pump chamber 61 in the front-rear direction X is smaller than the length of the pump chamber 61 in the up-down direction Z. The length of the pump chamber 61 in the width direction Y is smaller than the length of the pump chamber 61 in the up-down direction Z.

[0149] The pump chamber 61 extends in the vertical direction Z. The pump chamber 61 has an upper end and a lower end. The upper end of the pump chamber 61 is lower than the highest level 33. The upper end of the pump chamber 61 is arranged at substantially the same height position as the second highest level 33. The lower end of the pump chamber 61 is lower than the lowest level 33.

[0150] The processing block 31 includes a plurality of pumps 62. The pumps 62 are provided in the pump chamber 61. The pumps 62 are arranged in a row in the up-down direction Z. The pumps 62 deliver the processing liquid to the liquid processing unit 43 provided in at least one layer 33. The pumps 62 are connected to the nozzles 44b of the liquid processing unit 43 provided in at least one layer 33.

[0151] Reference Figure 2 The processing of the substrate W by each layer 33 is described. For convenience, the layers 33 are referred to as the first layer 33a, the second layer 33b, the third layer 33c, the fourth layer 33d, the fifth layer 33e, the sixth layer 33f, and the seventh layer 33g from bottom to top. The first layer 33a is the lowest among the layers 33. The seventh layer 33g is the highest among the layers 33.

[0152] The processing units 41 of the sixth to seventh levels 33f-33g perform the same processing on the substrate W. The processing units 41 of the sixth to seventh levels 33f-33g perform the first processing on the substrate W. The first processing includes an anti-reflection film forming processing for forming an anti-reflection film on the substrate W.

[0153] The processing units 41 of the fourth and fifth layers 33d-33e perform the same processing on the substrate W. The processing units 41 of the fourth and fifth layers 33d-33e perform the second processing on the substrate W. The second processing includes a resist film forming processing for forming a resist film on the substrate W.

[0154] The processing units 41 in the first to third stages 33a to 33c perform the same processing on the substrate W. The processing units 41 in the first to third stages 33a to 33c perform the third processing on the substrate W. The third processing includes a developing processing for developing the substrate W.

[0155] In addition, the first process does not include a resist film forming process and a developing process. The second process does not include an anti-reflection film forming process and a developing process. The third process does not include an anti-reflection film forming process and a resist film forming process. Therefore, the first process is different from the second process. The first process is different from the third process. The second process is different from the third process.

[0156] The anti-reflection film forming process, the resist film forming process and the developing process are all liquid processes. The anti-reflection film forming process and the resist film forming process are pre-exposure processes performed before the exposure process. The developing process is post-exposure processes performed after the exposure process.

[0157] The first process does not include post-exposure processing. The second process does not include post-exposure processing. The third process does not include pre-exposure processing.

[0158] The antireflection film forming process and the resist film forming process are examples of the first pre-exposure process and the second pre-exposure process in the present invention.

[0159] In accordance with the difference in processing between the layers 33, the details of the configuration of the processing unit 41 differ between the layers 33. This will be described in detail below.

[0160] The liquid processing unit 42 of the sixth to seventh stages 33f to 33g uses an anti-reflection film material as a processing liquid. The liquid processing unit 43 of the sixth to seventh stages 33f to 33g corresponds to the anti-reflection film coating unit BARC.

[0161] The liquid processing unit 42 of the fourth and fifth stages 33d-33e uses the resist material as the processing liquid. The liquid processing unit 43 of the fourth and fifth stages 33d-33e corresponds to the resist coating unit RESIST.

[0162] The liquid processing units 42 of the first to third stages 33a to 33c use a developer as a processing liquid. The liquid processing units 43 of the first to third stages 33a to 33c correspond to the developing units SD.

[0163] The shape of the nozzle 44b may be different between the 6th to 7th layers 33f-33g and the 4th to 5th layers 33d-33e. The shape of the nozzle 44b may be different between the 6th to 7th layers 33f-33g and the 1st to 3rd layers 33a-33c. The shape of the nozzle 44b may be different between the 4th to 5th layers 33d-33e and the 1st to 3rd layers 33a-33c.

[0164] Incidentally, the pump 62 supplies the processing liquid to the liquid processing parts 42 (liquid processing units 43) disposed at the 4th to 7th stages 33d to 33g, but does not supply the processing liquid to the liquid processing parts 42 (liquid processing units 43) disposed at the 1st to 3rd stages 33a to 33c.

[0165] Reference Figure 4 . The first treatment also includes hydrophobic treatment, heating treatment and cooling treatment. Hydrophobic treatment, heating treatment and cooling treatment are all heat treatment. Hydrophobic treatment is a treatment in which a treatment gas containing hexamethyldisilazane (HMDS: Hexamethyldisilazane) is supplied to the substrate W while adjusting the substrate W to a specified temperature. Hydrophobic treatment is performed to improve the adhesion between the substrate W and the coating film. Heating treatment is heating the substrate W. Cooling treatment is cooling the substrate W.

[0166] Therefore, a part of the heat treatment unit 48 of the 6th to 7th levels 33f-33g corresponds to the hydrophobic treatment unit AHP. Another part of the heat treatment unit 48 of the 6th to 7th levels 33f-33g corresponds to the heating unit HP. The remaining part of the heat treatment unit 48 of the 6th to 7th levels 33f-33g corresponds to the cooling unit CP.

[0167] The second treatment further includes a heating treatment and a cooling treatment.

[0168] Therefore, a part of the heat treatment unit 48 of the 4th and 5th levels 33d-33e corresponds to the heating unit HP, and the remaining part of the heat treatment unit 48 of the 4th and 5th levels 33d-33e corresponds to the cooling unit CP.

[0169] The third treatment further includes a heating treatment and a cooling treatment.

[0170] Therefore, a part of the heat treatment unit 48 of the first to third stages 33a to 33c corresponds to the heating unit HP, and the remaining part of the heat treatment unit 48 of the first to third stages 33a to 33c corresponds to the cooling unit CP.

[0171] The structures of the heat treatment unit 48 may be different between the hydrophobic treatment unit AHP, the heating unit HP, and the cooling unit CP. For example, the hydrophobic treatment unit AHP and the heating unit HP may also include the second plate 49b. The cooling unit CP may not include the second plate 49b. The hydrophobic treatment unit AHP may also include a gas supply unit for supplying a processing gas to the substrate W.

[0172] The sixth to seventh layers 33f-33g are examples of "layers subjected to the first process" in the present invention. The fourth to fifth layers 33d-33e are examples of "layers subjected to the second process" in the present invention. The first to third layers 33a-33c are examples of "layers subjected to the third process" in the present invention.

[0173] <Interface 71>

[0174] Reference Figure 1-4 , 9, 10. Fig. 9 It is a rear view of the front part of the interface part 71. Fig.10 2 is a rear view of the rear portion of the interface portion 71. The interface portion 71 has a substantially box shape. The interface portion 71 is substantially rectangular in a plan view, a side view, and a front view.

[0175] The interface portion 71 includes a frame 72. The frame 72 is provided as a framework (skeleton) of the interface portion 71. The frame 72 defines the shape of the interface portion 71. The frame 72 is made of metal, for example.

[0176] The interface section 71 includes a conveying section 73. The conveying section 73 of the interface section 71 conveys the substrate W between the second mounting section 56 and the exposure unit EXP.

[0177] The conveying unit 73 includes a first conveying mechanism 74 and a second conveying mechanism 75. The first conveying mechanism 74 and the second conveying mechanism 75 respectively convey the substrate W. The first conveying mechanism 74 and the second conveying mechanism 75 are arranged in a manner aligned in the width direction Y. The first conveying mechanism 74 is arranged on the right side of the second conveying mechanism 75. The first conveying mechanism 74 is arranged at a height position substantially the same as that of the second conveying mechanism 75.

[0178] The first conveying mechanism 74 is disposed behind and to the right of the second placing portion 56. The second conveying mechanism 75 is disposed behind and to the left of the second placing portion 56. The first conveying mechanism 74 and the second conveying mechanism 75 are each capable of approaching the second placing portion 56.

[0179] The first conveying mechanism 74 has substantially the same structure and shape as the first conveying mechanism 26 of the loading unit 21. The second conveying mechanism 75 has substantially the same structure and shape as the first conveying mechanism 26 of the loading unit 21 except for being bilaterally symmetrical.

[0180] The conveying section 73 includes a third conveying mechanism 76. The third conveying mechanism 76 conveys the substrate W. The third conveying mechanism 76 is arranged behind the first conveying mechanism 74 and the second conveying mechanism 75. In more detail, the third conveying mechanism 76 is arranged behind and to the left of the first conveying mechanism 74. The third conveying mechanism 76 is arranged behind and to the right of the second conveying mechanism 75. The third conveying mechanism 76 is arranged at a height position substantially the same as that of the first conveying mechanism 74 and the second conveying mechanism 75. In more detail, the third conveying mechanism 76 is arranged at a height position substantially the same as that of the lower part of the first conveying mechanism 74 and the lower part of the second conveying mechanism 75. The third conveying mechanism 76 can approach the exposure machine EXP. The third conveying mechanism 76 transfers the substrate W to the exposure machine EXP, and receives the substrate W from the exposure machine EXP.

[0181] The third transport mechanism 76 includes a driving section 77a and two holding sections 77b and 77c. The driving section 77a is supported by the frame 72. The holding sections 77b and 77c are supported by the driving section 77a. The driving section 77a moves the holding sections 77b and 77c. The driving section 77a moves the holding sections 77b and 77c in, for example, the front-rear direction X, the width direction Y, and the up-down direction Z. The driving section 77a rotates the holding sections 77b and 77c around an axis parallel to the up-down direction Z, for example. The holding sections 77b and 77c are in contact with the substrate W, respectively. The holding sections 77b and 77c each hold one substrate W in a horizontal posture.

[0182] The interface portion 71 includes an intermediate mounting portion 81. A substrate W is mounted on the intermediate mounting portion 81.

[0183] The intermediate loading section 81 is arranged between the first conveying mechanism 74, the second conveying mechanism 75, and the third conveying mechanism 76. The intermediate loading section 81 is arranged behind the first conveying mechanism 74 and the second conveying mechanism 75. The intermediate loading section 81 is arranged behind and to the left of the first conveying mechanism 74. The intermediate loading section 81 is arranged behind and to the right of the second conveying mechanism 75. The intermediate loading section 81 is arranged in front of the third conveying mechanism 76. The intermediate loading section 81 is arranged at a height position substantially the same as that of the first conveying mechanism 74, the second conveying mechanism 75, and the third conveying mechanism 76. The intermediate loading section 81 is arranged at a height position substantially the same as that of the lower part of the first conveying mechanism 74 and the lower part of the second conveying mechanism 75. The intermediate loading section 81 is arranged at a position accessible to the first conveying mechanism 74, the second conveying mechanism 75, and the third conveying mechanism 76.

[0184] Reference Figure 3 , 10The intermediate loading section 81 includes a transport loading section 82 and a return loading section 83. The transport loading section 82 is exclusively for the first transport mechanism 74 and the second transport mechanism 75 to load the substrate W. The third transport mechanism 76 does not load the substrate W on the transport loading section 82. The third transport mechanism 76 mainly acquires the substrate W from the transport loading section 82. The first transport mechanism 74 and the second transport mechanism 75 do not acquire the substrate W from the transport loading section 82. The return loading section 83 is exclusively for the third transport mechanism 76 to load the substrate W. The first transport mechanism 74 and the second transport mechanism 75 do not load the substrate W on the return loading section 83. The first transport mechanism 74 and the second transport mechanism 75 mainly acquire the substrate W from the return loading section 83. The third transport mechanism 76 does not acquire the substrate W from the return loading section 83.

[0185] The transport placement portion 82 and the return placement portion 83 are arranged so as to be aligned in the up-down direction Z. The transport placement portion 82 overlaps with the return placement portion 83 in a plan view.

[0186] The transport placement unit 82 includes a plurality of cooling placement units 84. One substrate W is placed on one cooling placement unit 84. The cooling placement unit 84 cools the substrate W placed on the cooling placement unit 84. The cooling placement unit 84 adjusts the temperature of the substrate W to a temperature suitable for exposure processing, for example.

[0187] The cooling placement units 84 are arranged in a row in the up-down direction Z. The cooling placement units 84 overlap with each other in a plan view.

[0188] Although not shown in the figure, the cooling placement unit 84 has a structure in which a temperature control unit is added to the placement unit 54. The temperature control unit is attached to the placement plate 55a of the placement unit 54, and controls the temperature of the placement plate 55a.

[0189] The return placement section 83 includes a plurality of placement units 85. One substrate W is placed on one placement unit 85.

[0190] The placement units 85 are arranged in a row in the up-down direction Z. The placement units 85 overlap each other in a plan view. The placement units 85 overlap the cooling placement unit 84 in a plan view.

[0191] The placement unit 85 has substantially the same structure and shape as the placement unit 54 .

[0192] Reference Figure 1 , 2 , 4, 9. The interface unit 71 includes a cleaning unit 91. The cleaning unit 91 performs a cleaning process for cleaning the substrate W. The cleaning unit 91 further performs a drying process for drying the substrate W. The transport unit 73 transports the substrate W to the cleaning unit 91.

[0193] The cleaning section 91 includes a first cleaning section 92. The first cleaning section 92 is arranged at a position accessible to the first conveying mechanism 74. The first cleaning section 92 is arranged at a position not adjacent to the first conveying mechanism 74. The first cleaning section 92 is arranged to the side of the first conveying mechanism 74. The first cleaning section 92 is arranged to the right of the first conveying mechanism 74. The first cleaning section 92 is arranged at a height position substantially the same as that of the first conveying mechanism 74.

[0194] The first cleaning section 92 includes a plurality of (for example, three) pre-exposure cleaning units 93. The pre-exposure cleaning units 93 are arranged in a row in the vertical direction Z. The pre-exposure cleaning units 93 overlap each other in a plan view. The pre-exposure cleaning units 93 are arranged at positions accessible to the first conveying mechanism 74.

[0195] The pre-exposure cleaning unit 93 performs a cleaning process on the substrate W before the exposure process. Specifically, the pre-exposure cleaning unit 93 cleans the substrate W by supplying a cleaning liquid to the substrate W. For example, the pre-exposure cleaning unit 93 may supply a cleaning liquid to the back side of the substrate W to clean the back side and the peripheral portion of the substrate W. The pre-exposure cleaning unit 93 may clean the substrate W while rotating the substrate W, for example. The pre-exposure cleaning unit 93 may clean the substrate W while contacting the substrate W with a brush, for example. The pre-exposure cleaning unit 93 further performs a drying process on the substrate W before the exposure process.

[0196] The first cleaning section 92 includes a plurality of (for example, three) post-exposure cleaning units 94. The post-exposure cleaning units 94 are arranged in a row in the vertical direction Z. The post-exposure cleaning units 94 overlap each other in a plan view. The post-exposure cleaning units 94 are arranged below the pre-exposure cleaning units 93. The post-exposure cleaning units 94 overlap the pre-exposure cleaning units 93 in a plan view. The post-exposure cleaning units 94 are arranged at a position accessible to the first conveying mechanism 74.

[0197] The post-exposure cleaning unit 94 performs a cleaning process on the substrate W after the exposure process. Specifically, the post-exposure cleaning unit 94 cleans the substrate W by supplying a cleaning liquid to the substrate W. The post-exposure cleaning unit 94 further performs a drying process on the substrate W.

[0198] The cleaning section 91 includes a second cleaning section 95. The second cleaning section 95 is arranged at a position accessible to the second conveying mechanism 75. The second cleaning section 95 is arranged at a position adjacent to the second conveying mechanism 75. The second cleaning section 95 is arranged to the side of the second conveying mechanism 75. The second cleaning section 95 is arranged to the left of the second conveying mechanism 75. The second cleaning section 95 is arranged at a height position substantially the same as that of the second conveying mechanism 75.

[0199] The second cleaning section 95 includes a plurality of (for example, three) pre-exposure cleaning units 96. The second cleaning section 95 includes a plurality of (for example, three) post-exposure cleaning units 97. The pre-exposure cleaning units 96 and the post-exposure cleaning units 97 are arranged in the same manner as the pre-exposure cleaning units 93 and the post-exposure cleaning units 94 except for the aspect of bilateral symmetry. The pre-exposure cleaning units 96 and the post-exposure cleaning units 97 have the same structure and shape as the pre-exposure cleaning units 93 and the post-exposure cleaning units 94 except for the aspect of bilateral symmetry.

[0200] The cleaning process (e.g., the process performed on the substrate W by the cleaning unit 91) belongs to the liquid process. The cleaning process performed on the substrate W before the exposure process (e.g., the process performed on the substrate W by the pre-exposure cleaning units 93 and 96) belongs to the pre-exposure process. The cleaning process performed on the substrate W after the exposure process (e.g., the process performed on the substrate W by the post-exposure cleaning units 94 and 97) belongs to the post-exposure process.

[0201] Reference Figure 1 , 2 , 4, 10. The interface unit 71 includes a heat treatment unit 101. The heat treatment unit 101 performs heat treatment on the substrate W. The transport unit 73 transports the substrate W to the heat treatment unit 101.

[0202] The heat treatment section 101 includes a first heat treatment section 102. The first heat treatment section 102 is arranged at a position accessible to the first conveying mechanism 74. The first heat treatment section 102 is arranged at a position adjacent to the first conveying mechanism 74. The first heat treatment section 102 is arranged behind the first conveying mechanism 74. The first heat treatment section 102 is arranged behind the first cleaning section 92. The first heat treatment section 102 is arranged on the right side of the intermediate loading section 81 in a plan view. The first heat treatment section 102 is arranged at a height position substantially the same as that of the first conveying mechanism 74. In more detail, the first heat treatment section 102 is arranged at a height position substantially the same as that of the upper portion of the first conveying mechanism 74. The first heat treatment section 102 is arranged at a position higher than the third conveying mechanism 76.

[0203] The first heat treatment section 102 includes a plurality of post-exposure heating units 103. The post-exposure heating units 103 are arranged in a row in the vertical direction Z. The post-exposure heating units 103 overlap each other in a plan view. The post-exposure heating units 103 are arranged at positions accessible to the first conveying mechanism 74.

[0204] The post-exposure heating unit 103 performs a heat treatment (i.e., post-exposure baking) on ​​the substrate W after the exposure treatment. The post-exposure heating unit 103 has a structure and shape substantially the same as those of the heat treatment unit 48. More specifically, the post-exposure heating unit 103 has a structure and shape substantially the same as those of the heat treatment unit 48 corresponding to the heating unit HP.

[0205] The heat treatment section 101 includes a second heat treatment section 104. The second heat treatment section 104 is arranged at a position accessible to the second conveying mechanism 75. The second heat treatment section 104 is arranged at a position adjacent to the second conveying mechanism 75. The second heat treatment section 104 is arranged behind the second conveying mechanism 75. The second heat treatment section 104 is arranged behind the second cleaning section 95. The second heat treatment section 104 is arranged on the left side of the intermediate loading section 81 in a plan view. The second heat treatment section 104 is arranged at a height position substantially the same as that of the second conveying mechanism 75. In more detail, the second heat treatment section 104 is arranged at a height position substantially the same as that of the upper portion of the second conveying mechanism 75. The second heat treatment section 104 is arranged at a position higher than the third conveying mechanism 76.

[0206] The second heat treatment section 104 includes a plurality of post-exposure heating units 105. The post-exposure heating units 105 are arranged similarly to the post-exposure heating units 103 except for being bilaterally symmetrical. The post-exposure heating units 105 have the same structure and shape as the post-exposure heating units 103 except for being bilaterally symmetrical.

[0207] The post-exposure heat treatment (for example, the treatment performed on the substrate W by the heat treatment unit 101) belongs to the heat treatment. The post-exposure heat treatment belongs to the post-exposure treatment.

[0208] <Control Unit 107>

[0209] Reference Figure 1 The substrate processing apparatus 1 includes a control unit 107. The control unit 107 is provided, for example, in the loading unit 21. The control unit 107 controls the stacker unit 11, the loading unit 21, the processing block 31 (layer 33), and the interface unit 71. More specifically, the control unit 107 controls the carrier transport mechanism 15, the transport unit 25, the main transport mechanism 36, and the transport unit 73. The control unit 107 further controls the processing unit 41, the cleaning unit 91, and the thermal processing unit 101.

[0210] The control unit 107 is implemented by a central processing unit (CPU) that executes various processing, a RAM (Random-Access Memory) that serves as a work area for processing, a storage medium such as a fixed disk, etc. Various information such as a processing recipe (processing program) for processing the substrate W and information for identifying each substrate W is stored in the storage medium.

[0211] <Operation of the Conveying Unit 25 of the Loading Unit 21>

[0212] Fig.11 It is a diagram schematically showing the circulation operation of the first transport mechanism 26 of the loading unit 21 . Fig.12It is a diagram schematically showing the circulation operation of the second transport mechanism 27 of the loading unit 21 .

[0213] The first conveying mechanism 26 and the second conveying mechanism 27 repeat the process according to the control of the control unit 107. Fig.11 and 12 The cyclic action shown. The cyclic action of the first conveying mechanism 26 includes a supply action and an inter-layer conveying action. That is, the first conveying mechanism 26 performs a supply action and an inter-layer conveying action. The supply action is an action of conveying a substrate W from a carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51. The inter-layer conveying action is an action of conveying a substrate W between two first mounting portions 51 provided on different levels 33.

[0214] The circulation operation of the second transport mechanism 27 includes a recovery operation. That is, the second transport mechanism 27 performs a recovery operation. The recovery operation is an operation of transporting the substrate W from the first mounting portion 51 to the carrier C mounted on the carrier mounting portion 22B.

[0215] The first transport mechanism 26 does not perform the recovery operation. The second transport mechanism 27 does not perform the supply operation and the interlayer transport operation. In this way, the transport unit 25 transports the substrate W between the carrier C placed on the carrier placement units 22A and 22B and the first placement unit 51 .

[0216] <Operation of Substrate Processing Apparatus>

[0217] Fig.13 FIG. 2 is a diagram schematically showing an outline of a transport path for a substrate W. FIG. Fig.13 The transport path of the substrate W is indicated by a dashed line. Fig.13 For convenience, the symbols of the elements of the first layer 33a are marked with "a". For example, "52a" refers to the first conveying and placing section 52 of the first layer 33a. Similarly, the symbols of the elements of the second to seventh layers 33b-33g are marked with "bg".

[0218] The substrate processing apparatus 1 transports each substrate W to a plurality of stages 33 . The substrate processing apparatus 1 processes each substrate W on at least two stages 33 .

[0219] Specifically, each substrate W is transported to any one of the 6th to 7th layers 33f to 33g, any one of the 4th to 5th layers 33d to 33e, and any one of the 1st to 3rd layers 33a to 33c. Each substrate W is processed in any one of the 6th to 7th layers 33f to 33g, any one of the 4th to 5th layers 33d to 33e, and any one of the 1st to 3rd layers 33a to 33c.

[0220] Fig.141 is a diagram schematically showing elements (for example, processing units) of the substrate processing apparatus 1 through which the substrate W passes. Fig.14 In the figure, for convenience, the symbols of the elements of the first to seventh layers 33a to 33g are denoted by "ag." The operation example of the substrate processing apparatus 1 includes a supply step, a processing step, an inter-layer transfer step, and a recovery step.

[0221] Reference Figure 11-14 , the supply step, processing step, inter-layer transport step and recovery step are explained.

[0222] <<Supply Steps>>

[0223] The first transport mechanism 26 transports the substrate W from the carrier C to the sixth to seventh stages 33f to 33g by performing a supply operation.

[0224] Specifically, the first transport mechanism 26 unloads the substrate W from the carrier C mounted on the carrier mounting portion 22A, and mounts the substrate W on the first transport mounting portion 52f on the sixth level 33f. The first transport mechanism 26 unloads the substrate W from the carrier C mounted on the carrier mounting portion 22A, and mounts the substrate W on the first transport mounting portion 52g on the seventh level 33g.

[0225] <<Processing steps>>

[0226] In the sixth layer 33f, the substrate W is subjected to the first process (process including the antireflection film forming process).

[0227] Specifically, the main transport mechanism 36f of the sixth level 33f takes the substrate W from the first transport loading unit 52f and transports the substrate W to the processing unit 41 of the sixth level 33f. The main transport mechanism 36f sequentially transports the substrate W to the hydrophobic treatment unit AHPf, the anti-reflection film coating unit BARCf, the heating unit HPf, and the cooling unit CPf, for example. The processing unit 41 of the sixth level 33f performs the first treatment on the substrate W. The processing unit 41 of the sixth level 33f sequentially performs the hydrophobic treatment, the anti-reflection film forming treatment, the heating treatment, and the cooling treatment on the substrate W, for example. The main transport mechanism 36f places the substrate W that has been subjected to the first treatment in the sixth level 33f on the first return loading unit 53f of the sixth level 33f.

[0228] When the main transport mechanism 36f transports the substrate W to the hydrophobizing treatment unit AHPf, the main transport mechanism 36f may also replace the processed substrate W in the hydrophobizing treatment unit AHPf with an unprocessed substrate W. For example, in a state where the main transport mechanism 36f holds the unprocessed substrate W with the holding portion 37f, the main transport mechanism 36f may also use the holding portion 37g to move the processed substrate W in the hydrophobizing treatment unit AHPf out of the hydrophobizing treatment unit AHPf. Then, the main transport mechanism 36f may also use the holding portion 37f to move the unprocessed substrate W into the hydrophobizing treatment unit AHPf. Similarly, when the main transport mechanism 36f transports the substrate W to other units BARCf, HPf, and CPf, the main transport mechanism 36f may also replace the processed substrate W with an unprocessed substrate W.

[0229] Similar to the sixth level 33f, in the seventh level 33g, the first process is performed on the substrate W. Specifically, the main transport mechanism 36g of the seventh level 33g transports the substrate W from the first transport placement unit 52g to the processing unit 41 of the seventh level 33g (specifically, the hydrophobic treatment unit AHPg, the anti-reflection film coating unit BARCg, the heating unit HPg, and the cooling unit CPg). The processing unit 41 of the seventh level 33g performs the first process on the substrate W. The first main transport mechanism 36g places the substrate W that has been subjected to the first process in the seventh level 33g on the first return placement unit 53g of the seventh level 33g.

[0230] <<Inter-layer transfer steps>>

[0231] The first transport mechanism 26 transports the substrate W from the sixth to seventh layers 33f to 33g to the fourth to fifth layers 33d to 33e by performing the inter-layer transport operation.

[0232] Specifically, the first transport mechanism 26 takes the substrate W on the first return placement 53f and places the substrate W on the first transport placement 52d on the fourth level 33d. The first transport mechanism 26 takes the substrate W on the first return placement 53g and places the substrate W on the first transport placement 52e on the fourth level 33e.

[0233] <<Processing steps>>

[0234] In the fourth level 33d, the substrate W is subjected to the second process (process including the resist film forming process).

[0235] Specifically, the main transport mechanism 36d of the fourth level 33d obtains the substrate W from the first transport loading unit 52d and transports the substrate W to the processing unit 41 of the fourth level 33d. The main transport mechanism 36d, for example, sequentially transports the substrate W to the resist coating unit RESISTd, the heating unit HPd, and the cooling unit CPd. The processing unit 41 of the fourth level 33d performs the second process on the substrate W. The processing unit 41 of the fourth level 33d, for example, sequentially performs the resist film forming process, the heating process, and the cooling process on the substrate W. The main transport mechanism 36d places the substrate W that has been subjected to the second process in the fourth level 33d on the second transport loading unit 57d of the fourth level 33d.

[0236] Similar to the fourth level 33d, in the fifth level 33e, the second process is performed on the substrate W. Specifically, the main transport mechanism 36e of the fifth level 33e transports the substrate W from the first transport placement unit 52e to the processing unit 41 of the fifth level 33g (specifically, the resist coating unit RESISTd, the heating unit HPd, and the cooling unit CPd). The processing unit 41 of the fifth level 33e performs the second process on the substrate W. The main transport mechanism 36e places the substrate W that has been subjected to the second process in the fifth level 33e on the second transport placement unit 57e of the fifth level 33e.

[0237] The transport unit 73 of the interface unit 71 transports the substrate W from the second transport placement units 57 d and 57 e to the exposure machine EXP via the pre-exposure cleaning units 93 and 96 .

[0238] Specifically, the first conveying mechanism 74 conveys the substrate W from the second conveying and loading section 57d to the pre-exposure cleaning unit 93. The pre-exposure cleaning unit 93 performs a cleaning process on the substrate W. The first conveying mechanism 74 conveys the substrate W from the pre-exposure cleaning unit 93 to the conveying and loading section 82 (that is, the cooling loading section 84). The second conveying mechanism 75 conveys the substrate W from the second conveying and loading section 57e to the pre-exposure cleaning unit 96. The pre-exposure cleaning unit 96 performs a cleaning process on the substrate W. The second conveying mechanism 75 conveys the substrate W from the pre-exposure cleaning unit 96 to the conveying and loading section 82. The third conveying mechanism 76 conveys the substrate W from the conveying and loading section 82 to the exposure machine EXP. The exposure machine EXP performs an exposure process on the substrate W.

[0239] The transport unit 73 transports the substrate W from the exposure machine EXP to the second return placement units 58 a to 58 c via the post-exposure cleaning units 94 and 97 and the post-exposure heating units 103 and 105 .

[0240] Specifically, the third transport mechanism 76 transports the substrate W from the exposure machine EXP to the return loading unit 83 (that is, the loading unit 85). The first transport mechanism 74 transports the substrate W from the return loading unit 83 to the post-exposure cleaning unit 94. The post-exposure cleaning unit 94 performs a cleaning process on the substrate W. The first transport mechanism 74 transports the substrate W from the post-exposure cleaning unit 94 to the post-exposure heating unit 103. The post-exposure heating unit 103 performs a post-exposure heating process on the substrate W. The first transport mechanism 74 transports the substrate W from the post-exposure heating unit 103 to the second return loading units 58a-58c of the first to third levels 33a-33c. Similarly, the second transport mechanism 75 transports the substrate W from the return loading unit 83 to the post-exposure cleaning unit 97. The post-exposure cleaning unit 97 performs a cleaning process on the substrate W. The second transport mechanism 75 transports the substrate W from the post-exposure cleaning unit 97 to the post-exposure heating unit 105. The post-exposure heating unit 105 performs a post-exposure heating process on the substrate W. The second transport mechanism 75 transports the substrate W from the post-exposure heating unit 105 to the second return placement portions 58a to 58c on the first to third stages 33a to 33c.

[0241] The transport unit 73 of the interface unit 71 does not perform inter-layer transport operation. Here, the inter-layer transport operation of the transport unit 73 is to transport the substrate W between two second mounting units 56 provided on different levels 33 without passing through at least one of the cleaning unit 91, the thermal processing unit 101, and the exposure unit EXP.

[0242] In the first layer 33a, the substrate W is subjected to the third process (process including the development process).

[0243] Specifically, the main transport mechanism 36a of the first layer 33a takes the substrate W from the second return loading unit 58a and transports the substrate W to the processing unit 41 of the first layer 33a. The main transport mechanism 36a sequentially transports the substrate W to the developing unit SDa, the heating unit HPa, and the cooling unit CPa, for example. The processing unit 41 of the first layer 33a performs the third process on the substrate W. The processing unit 41 of the first layer 33a sequentially performs the developing process, the heating process, and the cooling process on the substrate W, for example. The main transport mechanism 36a places the substrate W that has been subjected to the third process in the first layer 33a on the first return loading unit 53a of the first layer 33a.

[0244] Similar to the first level 33a, in the second-third levels 33b-33c, the third process is performed on the substrate W. Specifically, the main transport mechanism 36b of the second level 33b transports the substrate W from the third return loading section 58b to the processing section 41 (specifically, the developing unit SDb, the heating unit HPb, and the cooling unit CPb) of the second level 33b. The main transport mechanism 36c of the third level 33c transports the substrate W from the third return loading section 58c to the processing section 41 (specifically, the developing unit SDc, the heating unit HPc, and the cooling unit CPc) of the third level 33c. The processing sections 41 of the second-third levels 33b-33c respectively perform the third process on the substrate W. The main transport mechanism 36b places the substrate W that has been subjected to the third process in the second level 33b on the first return loading section 53b of the second level 33b. The main transport mechanism 36c places the substrate W having been subjected to the third process on the third stage 33c on the first return placement portion 53c on the third stage 33c.

[0245] <<Recycling Steps>>

[0246] The second transfer mechanism 27 transfers the substrate W from the first to third stages 33a to 33c to the carrier C by performing a recovery operation.

[0247] Specifically, the second transport mechanism 27 takes the substrate W from the first return loading section 53a and transports the substrate W to the carrier C mounted on the carrier loading section 22B. Similarly, the second transport mechanism 27 transports the substrate W from the first return loading section 53b to the carrier C mounted on the carrier loading section 22B. The second transport mechanism 27 transports the substrate W from the first return loading section 53c to the carrier C mounted on the carrier loading section 22B.

[0248] <Operation of the Conveying Section 25 of the Loading Section 21 on the First Loading Section 51>

[0249] Reference Fig. 8A , 8B , a detailed operation example of the conveying section 25 on the first placing section 51 will be described.

[0250] As described above, the first loading section 51 provided on one level 33 includes eight loading units 54. For convenience, the eight loading units 54 provided on one level 33 are referred to as loading units 54a, 54b, ..., 54h. The loading units 54a-54d belong to the first return loading section 53. The loading units 54e-54h belong to the first transport loading section 52.

[0251] Reference Fig. 8AThe conveying unit 25 simultaneously places two substrates W on the first loading unit 51. Specifically, the first conveying mechanism 26 approaches the first loading unit 51 while holding the two substrates W by the holding units 28d and 28e. Then, the first conveying mechanism 26 simultaneously places the two substrates W on the first conveying loading unit 52. In this way, the first conveying mechanism 26 can place the two substrates W on the first conveying loading unit 52 by approaching the first conveying loading unit 52 once. Therefore, the first conveying mechanism 26 can efficiently convey the substrates W.

[0252] As described above, the first transport placement portion 52 is configured so that four substrates W can be placed simultaneously on the first transport placement portion 52. Therefore, after the first transport mechanism 26 places two substrates W on the first transport placement portion 52, the first transport mechanism 26 can place another two substrates W on the first transport placement portion 52.

[0253] For example, the first transport mechanism 26 can simultaneously place the first and second substrates W on the placement units 54e and 54f. Thereafter, the first transport mechanism 26 can simultaneously place the third and fourth substrates W on the placement units 54g and 54h.

[0254] Furthermore, while the first transport mechanism 26 places the third and fourth substrates W on the mounting units 54g and 54h, the main transport mechanism 36 can obtain the first and second substrates W from the mounting units 54e and 54f. More specifically, after the first transport mechanism 26 places the first and second substrates W on the mounting units 54e and 54f and before the first transport mechanism 26 places the fifth and sixth substrates W on the mounting units 54e and 54f, the main transport mechanism 36 can obtain the first and second substrates W from the mounting units 54e and 54f. Therefore, after the first transport mechanism 26 places the third and fourth substrates W on the mounting units 54g and 54h, the first transport mechanism 26 can simultaneously place the fifth and sixth substrates W on the mounting units 54e and 54f. In this manner, the first transport mechanism 26 can smoothly repeat the operation of placing the substrate W on the first transport placement unit 52 .

[0255] Here, there is a case where the first conveying mechanism 26 and the main conveying mechanism 36 approach the first conveying loading section 52 at the same time. For example, when the first conveying mechanism 26 approaches the loading units 54g and 54h, there is a case where the main conveying mechanism 36 approaches the loading units 54e-54f. The positions of the loading units 54g and 54h are different from the positions of the loading units 54e-54f. The loading units 54g and 54h are arranged above the loading units 54e-54f. Therefore, there is no need to worry about the first conveying mechanism 26 and the main conveying mechanism 36 interfering with each other. In this way, even if the first conveying mechanism 26 and the main conveying mechanism 36 approach the first conveying loading section 52 at the same time, the interference between the first conveying mechanism 26 and the main conveying mechanism 36 can be easily avoided. Therefore, the first conveying mechanism 26 and the main conveying mechanism 36 are allowed to approach the first conveying loading section 52 at the same time. Therefore, when one of the first transport mechanism 26 and the main transport mechanism 36 approaches the first transport placement portion 52, the other of the first transport mechanism 26 and the main transport mechanism 36 does not need to wait. Therefore, the efficiency of the first transport mechanism 26 in transporting the substrate W can be further improved. Similarly, the efficiency of the main transport mechanism 36 in transporting the substrate W can be further improved.

[0256] As described above, even when the first transport mechanism 26 simultaneously places two substrates W on the first transport placement unit 52 in one operation, the first transport mechanism 26 can smoothly repeat the operation of placing the substrates W on the first transport placement unit 52 .

[0257] In addition, the operation of the transport unit 25 placing the substrate W on the first transport placement unit 52 is included in the supply operation. The operation of the transport unit 25 placing the substrate W on the first transport placement unit 52 is also included in the inter-layer transport operation.

[0258] Reference Figure 8B The conveying unit 25 simultaneously obtains two substrates W from the first loading unit 51. Specifically, the first conveying mechanism 26 approaches the first loading unit 51. Then, the first conveying mechanism 26 simultaneously obtains two substrates W from the first return loading unit 53 using the holding units 28d and 28e. In this way, the first conveying mechanism 26 can obtain two substrates W from the first return loading unit 53 by approaching the first return loading unit 53 once. Therefore, the first conveying mechanism 26 can efficiently convey the substrates W.

[0259] As described above, the first return placement portion 53 is configured to simultaneously place four substrates W on the first return placement portion 53. Therefore, after the first transfer mechanism 26 receives two substrates W from the first return placement portion 53, the first transfer mechanism 26 can receive another two substrates W from the first return placement portion 53.

[0260] For example, the first transport mechanism 26 simultaneously takes in the first and second substrates W from the placement units 54a and 54b. Thereafter, the first transport mechanism 26 can simultaneously take in the third and fourth substrates W from the placement units 54c and 54d.

[0261] Furthermore, while the first transport mechanism 26 takes in the third and fourth substrates W on the loading units 54c and 54d, the main transport mechanism 36 can place the fifth and sixth substrates W on the loading units 54a and 54b. More specifically, after the first transport mechanism 26 takes in the first and second substrates W on the loading units 54a and 54b, and before the first transport mechanism 26 approaches the loading units 54a and 54b again, the main transport mechanism 36 can place the fifth and sixth substrates W on the loading units 54a and 54b. Therefore, after the first transport mechanism 26 takes in the third and fourth substrates W from the loading units 54c and 54d, the first transport mechanism 26 can simultaneously take in the fifth and sixth substrates W from the loading units 54a and 54b. In this way, the first transport mechanism 26 can smoothly repeat the action of taking in the substrates W from the first return loading unit 53.

[0262] Here, there is a case where the first conveying mechanism 26 and the main conveying mechanism 36 approach the first return loading section 53 at the same time. For example, when the first conveying mechanism 26 approaches the loading units 54c and 54d, there is a case where the main conveying mechanism 36 approaches the loading units 54a-54b. The positions of the loading units 54c and 54d are different from the positions of the loading units 54a and 54b. Therefore, there is no need to worry about the first conveying mechanism 26 and the main conveying mechanism 36 interfering with each other. In this way, even if the first conveying mechanism 26 and the main conveying mechanism 36 approach the first return loading section 53 at the same time, the interference between the first conveying mechanism 26 and the main conveying mechanism 36 can be easily avoided. Therefore, the first conveying mechanism 26 and the main conveying mechanism 36 are allowed to approach the first return loading section 53 at the same time. Therefore, when one of the first transport mechanism 26 and the main transport mechanism 36 approaches the first return placement portion 53, the other of the first transport mechanism 26 and the main transport mechanism 36 does not need to wait. Therefore, the efficiency of the first transport mechanism 26 in transporting the substrate W can be further improved. Similarly, the efficiency of the main transport mechanism 36 in transporting the substrate W can be further improved.

[0263] As described above, even when the first transport mechanism 26 simultaneously takes in two substrates W from the first return mounting portion 53 in one operation, the first transport mechanism 26 can smoothly repeat the operation of taking in substrates W from the first return mounting portion 53 .

[0264] Although not shown in the figure, the second transport mechanism 27 also simultaneously takes two substrates W from the first return placement section 53. Since four substrates W can be placed on the first return placement section 53, the second transport mechanism 27 can smoothly repeat the operation of taking substrates W from the first return placement section 53. Furthermore, even when the second transport mechanism 27 and the main transport mechanism 36 approach the first return placement section 53 at the same time, interference between the second transport mechanism 27 and the main transport mechanism 36 can be easily avoided.

[0265] In addition, the operation of the transport unit 25 to take in the substrate W from the first return mounting unit 53 is included in the above-mentioned inter-layer transport operation and the collection operation.

[0266] In the supply operation and the collection operation, the conveying section 25 approaches the first loading section 51. However, in the supply operation, the conveying section 25 approaches the first conveying loading section 52, but does not approach the first return loading section 53. In the collection operation, the conveying section 25 approaches the first return loading section 53, but does not approach the first conveying loading section 52. The position of the first conveying loading section 52 is different from the position of the first return loading section 53. Therefore, the movement of the conveying section 25 approaching the first conveying loading section 52 in the supply operation and the movement of the conveying section 25 approaching the first return loading section 53 in the collection operation do not interfere with each other.

[0267] In the supply operation and the inter-layer transport operation, the conveying unit 25 approaches the first transport loading unit 52. However, the first transport loading unit 52 approached by the conveying unit 25 in the supply operation and the first transport loading unit 52 approached by the conveying unit 25 in the inter-layer transport operation are different in the layer 33. For example, in the supply operation, the conveying unit 25 approaches the first transport loading units 52f and 52g, but does not approach the first transport loading units 52d and 52e. In the inter-layer transport operation, the conveying unit 25 approaches the first transport loading units 52d and 52e, but does not approach the first transport loading units 52f and 52g. Therefore, the operation of the conveying unit 25 approaching the first transport loading unit 52 in the supply operation and the operation of the conveying unit 25 approaching the first transport loading unit 52 in the inter-layer transport operation do not interfere with each other.

[0268] In the inter-layer conveying action and the recovery action, the conveying section 25 approaches the first return loading section 53. However, the first return loading section 53 approached by the conveying section 25 in the inter-layer conveying action and the first return loading section 53 approached by the conveying section 25 in the recovery action are different in level. For example, in the inter-layer conveying action, the conveying section 25 approaches the first return loading sections 53f and 53g, but does not approach the first return loading sections 53a-53c. In the recovery action, the conveying section 25 approaches the first return loading sections 53a-53c, but does not approach the first return loading sections 53f and 53g. Therefore, the action of the conveying section 25 approaching the first return loading section 53 in the inter-layer conveying action and the action of the conveying section 25 approaching the first return loading section 53 in the recovery action do not interfere with each other.

[0269] <Operation of Stacker Unit 11 and Loading Unit>

[0270] Figures 15A-15D It is a diagram schematically showing the operation of the stacker unit 11 and the loading unit 21 . Figures 15A-15D The carrier mounting portions 22A1 and 22A2 are shown in FIG. Figure 1 Different locations.

[0271] The second conveying mechanism 27 does not perform the supply operation. Only the first conveying mechanism 26 performs the supply operation. The first conveying mechanism 26 can approach the carrier C placed on the carrier placement section 22A, but cannot approach the carrier C placed on the carrier placement section 22B. Therefore, the conveying section 25 only removes the substrate W from the carrier C placed on the carrier placement section 22A, but does not remove the substrate W from the carrier C placed on the carrier placement section 22B. Therefore, Figures 15A-15D The carrier mounting portion 22B is omitted in the figure.

[0272] Reference Fig.15A The carrier Ca is placed on the carrier placement section 22A1. The transport section 25 (specifically, the first transport mechanism 26) has already taken out all the substrates W (e.g., substrates Wa1, Wa2, and Wa3) in the carrier Ca, so the carrier Ca does not contain any substrates W. The carrier Cb is placed on the carrier placement section 22A2. The carrier Cb contains unprocessed substrates W. The transport section 25 takes out substrate Wb1 from the carrier Cb. The carrier Cc is placed on the rack 13. The carrier Cc contains unprocessed substrates W.

[0273] Reference Fig. 15B The carrier transport mechanism 15 transports the carrier Ca from the carrier placement portion 22A1 to the rack 13. The transport unit 25 carries out the substrate Wb2 from the carrier Cb.

[0274] Reference Fig. 15C The carrier transport mechanism 15 transports the carrier Cc from the rack 13 to the carrier placement portion 22A1. The transport unit 25 carries out the substrate Wb3 from the carrier Cb.

[0275] Reference Fig.15D The transport unit 25 has already transported all the substrates W in the carrier Cb, so the carrier Cb does not contain any substrates W. The transport unit 25 transports the substrate Wc1 from the carrier Cc.

[0276] In this way, the loading unit 21 includes two carrier mounting units 22A1 and 22A2. Therefore, before the transport unit 25 unloads all the substrates W from the carrier Cb on the carrier mounting unit 22A2, the carrier transport mechanism 15 can load the carrier Cc on the carrier mounting unit 22A1. In other words, while the transport unit 25 unloads the substrates W from the carrier Cb, the carrier transport mechanism 15 can replace the carrier Ca on the carrier mounting unit 22A1 with the carrier Cc. Therefore, after the transport unit 25 unloads all the substrates W from the carrier Cb, the transport unit 25 can quickly start unloading the substrates W from the carrier Cc. Therefore, when the carrier C is replaced, there is no need to worry about a decrease in the transport efficiency of the substrates W by the transport unit 25.

[0277] Figures 16A-16C It is a diagram schematically showing the operation of the stacker unit 11 and the loading unit 21 . Figures 16A-16C The carrier mounting portions 22B1 and 22B2 are shown in FIG. Figure 1 Different locations.

[0278] The first conveying mechanism 26 does not perform the recovery operation. Only the second conveying mechanism 27 performs the recovery operation. The second conveying mechanism 27 can approach the carrier C loaded on the carrier loading section 22B, but cannot approach the carrier C loaded on the carrier loading section 22A. Therefore, the conveying section 25 only loads the substrate W into the carrier C loaded on the carrier loading section 22B, and does not load the substrate W into the carrier C loaded on the carrier loading section 22A. Therefore, Figures 16A-16C The carrier mounting portion 22A is omitted in the figure.

[0279] The recovery operation of the second transport mechanism 27 is an operation of transporting the substrate W from the 1st to 3rd levels 33a-33c to the carrier C. The 1st to 3rd levels 33a-33c are levels 33 through which the substrate W passes last among the 1st to 7th levels 33a-33g. The first placement portion 51 of the 1st to 3rd levels 33a-33c corresponds to the position where the substrate W is last placed before the substrate W is transported to the carrier C.

[0280] The first to third layers 33a-33c are examples of the final layers in the present invention.

[0281] In the following description, when the 1st to 3rd layers 33a-33c are not particularly distinguished, they are recorded as layers 33out. When the main conveying mechanism 36a-36c of the 1st to 3rd layers 33a-33c is not particularly distinguished, it is recorded as the main conveying mechanism 36out. When the first loading section 51a-51c of the 1st to 3rd layers 33a-33c is not particularly distinguished, it is recorded as the first loading section 51out. When the first return loading section 53a-53c of the 1st to 3rd layers 33a-33c is not particularly distinguished, it is recorded as the first return loading section 53out.

[0282] Reference Fig.16A . Carrier Ca is loaded on the carrier loading section 22B1. Carrier C is not loaded on the carrier loading section 22B2. Carrier Cb is loaded on the rack 13. The conveying section 25 carries the substrate W into the carrier Ca. Specifically, the second conveying mechanism 27 conveys the substrate Wa2 from the first loading section 51out (specifically, the first return loading section 53out) of the level 33out to the carrier Ca. The main conveying mechanism 36out of the level 33out carries the substrate Wa3 on the first loading section 51out (specifically, the first return loading section 53out). The main conveying mechanism 36out conveys the substrate Wb1 in the level 33out. The substrate Wb1 has not yet been loaded on the first loading section 51out (specifically, the first return loading section 53out).

[0283] Here, the substrate Wa3 is a substrate W to be carried into the carrier Ca. The substrate Wa3 is, for example, a substrate W carried out from the carrier Ca by the conveying unit 25. The substrate Wb1 is a substrate W to be carried into the carrier Cb. The substrates Wb2 and Wb3 described below are also substrates W to be carried into the carrier Cb. The substrates Wb1, Wb2, and Wb3 are, for example, substrates W carried out from the carrier Cb by the conveying unit 25.

[0284] Reference Fig. 16B The transport unit 25 transports the substrate Wa3 to the carrier Ca. The main transport mechanism 36out places the substrate Wb1 on the first placement unit 51out. The main transport mechanism 36out transports the substrate Wb2 in the stage 33out.

[0285] The control unit 107 detects the dispensing operation of the main transport mechanism 36out in the layer 33out. The dispensing operation of the main transport mechanism 36out is an operation of the main transport mechanism 36out to place the substrate W on the first placement unit 51out. The dispensing operation of the main transport mechanism 36out may be replaced by the dispensing operation in the layer 33out.

[0286] The control unit 107 determines the timing of the operation of the carrier transport mechanism 15 based on the detection result of the distribution operation. The operation of the carrier transport mechanism 15 is, for example, the operation of the carrier transport mechanism 15 to transport the carrier Cb from the rack 13 to the carrier loading portion 22B2. The carrier transport mechanism 15 operates according to the control of the control unit 107. The control of the carrier transport mechanism 15 by the control unit 107 is exemplified below.

[0287] The control unit 107 counts the number of dispensing operations of the main transport mechanism 36out. The control unit 107 determines whether the number of dispensing operations of the main transport mechanism 36out reaches a predetermined value. The predetermined value is determined in advance. The predetermined value is determined, for example, before the first loading unit 51out actually loads the substrate Wb1. The predetermined value is determined by information (for example, scheduling information) that the control unit 107 can refer to.

[0288] Here, the scheduling information is information related to the processing schedule and the transport schedule of the substrate W in the substrate processing device 1. The scheduling information includes information related to the relationship between the future time and the position of the substrate W. The scheduling information may also include, for example, information indicating when the substrate Wb1 is located at which position. The scheduling information may also include, for example, information related to the scheduled time when the substrate Wb1 is placed on the first loading unit 51out. For example, even if the scheduling information does not include information directly indicating the scheduled time, the control unit 107 can estimate the scheduled time based on the scheduling information.

[0289] Furthermore, the scheduling information includes information related to the conveying order of the substrates W. For example, the scheduling information may also include information indicating that the substrates Wa2, Wa3, Wb1, Wb2, and Wb3 are sequentially placed on the first placement unit 51out. For example, the scheduling information may also include information indicating that among the substrates Wa2, Wa3, Wb1, Wb2, and Wb3, the substrate Wb1 is placed third on the first placement unit 51out. For example, even if the scheduling information does not include information directly indicating the order of the substrate Wb1 ("the third"), the control unit 107 can infer the order of the substrates Wb1 based on the scheduling information.

[0290] For example, when the substrate Wb1 is scheduled to be placed on the first placing portion 51out for the third time, the predetermined value is set to "3".

[0291] Determining whether the number of dispense operations reaches a predetermined value is equivalent to determining whether the substrate Wb1 is placed on the first placement portion 51out. In other words, determining whether the number of dispense operations reaches a predetermined value is equivalent to specifying the timing at which the substrate Wb1 is actually placed on the first placement portion 51out.

[0292] Here, the substrate Wb1 is a predetermined substrate W to be carried into the carrier Cb. The carrier Cb is placed on the rack 13. More specifically, the substrate Wb1 is a predetermined substrate W to be carried into the carrier Cb placed on the rack 13 first among the substrates Wb1, Wb2, and Wb3. In other words, the substrate Wb1 is a substrate W to be carried into the carrier Cb placed on the rack 13 first among the predetermined substrates Wb1, Wb2, and Wb3 placed on the first placement portion 51out.

[0293] Therefore, the determination of whether the number of dispensing operations has reached a predetermined value can be described as follows, for example.

[0294] Determining whether the number of dispensing operations has reached a predetermined value is equivalent to determining whether a predetermined substrate Wb1 to be initially carried into a carrier Cb mounted on the rack 13 is mounted on the first mounting portion 51out.

[0295] Determining whether the number of dispensing operations has reached a predetermined value is equivalent to determining whether a predetermined substrate W to be carried into the carrier Cb mounted on the rack 13 is mounted on the first mounting portion 51out for the first time.

[0296] Determining whether the number of dispensing operations has reached a predetermined value is equivalent to specifying the timing at which a predetermined substrate W to be initially carried into the carrier Cb mounted on the rack 13 is actually mounted on the first mounting portion 51out.

[0297] Determining whether the number of dispense operations has reached a predetermined value is equivalent to specifying the time when a predetermined substrate W to be carried into the carrier Cb mounted on the rack 13 is actually mounted on the first mounting portion 51out for the first time.

[0298] When the control unit 107 determines that the substrate Wb1 has been placed on the first loading unit 51out, the control unit 107 starts the operation of the carrier transport mechanism 15 (specifically, the operation of the carrier transport mechanism 15 that transports the predetermined carrier Cb to be loaded with the substrate Wb1 from the rack 13 to the carrier loading unit 22B2).

[0299] The carrier transport mechanism 15 transports the carrier Cb from the rack 13 to the carrier placement portion 22B2 according to the control of the control unit 107. The carrier Cb is placed on the carrier placement portion 22B2.

[0300] Reference Fig. 16C The transport unit 25 transports the substrate Wb1 to the carrier Cb. The main transport mechanism 36out places the substrate Wb2 on the first placement unit 51out. The main transport mechanism 36out transports the substrate Wb3 in the stage 33out. The carrier transport mechanism 15 transports the carrier Ca from the carrier placement unit 22B1 to the rack 13. As a result, no carrier C is placed on the carrier placement unit 22B1.

[0301] As described above, the carrier transport mechanism 15 places the carrier Cb on the carrier placement portion 22B2 (see Fig. 16B ). Therefore, after the substrate Wb1 is placed on the first placement unit 51out, the transfer unit 25 can quickly transfer the substrate Wb1 to the carrier Cb (see Fig. 16C ) The transport unit 25 can smoothly perform a recovery operation of carrying the substrate W into the carrier Cb following the recovery operation of carrying the substrate W into the carrier Ca.

[0302] As described above, by making the control section 107 refer to the scheduling information, the control section 107 can obtain or estimate the scheduled time when the substrate Wb1 is placed on the first placement section 51out. Nevertheless, the control section 107 specifies the time when the substrate Wb1 is actually placed on the first placement section 51out based on the detection result of the distribution operation. Then, the control section 107 determines the timing of the operation of the carrier transport mechanism 15 based on the detection result of the distribution operation. Therefore, the control section 107 can determine the timing of the operation of the carrier transport mechanism 15 more accurately.

[0303] <Effects of the First Embodiment>

[0304] The substrate processing apparatus 1 of the first embodiment includes a loading section 21 and a plurality of stages 33. Each stage 33 includes a first loading section 51. The loading section 21 includes carrier loading sections 22A and 22B and a conveying section 25. The conveying section 25 conveys a substrate W between a carrier C loaded on the carrier loading sections 22A and 22B and the first loading section 51. The conveying section 25 includes a first conveying mechanism 26. The first conveying mechanism 26 performs a supply operation to convey a substrate W from the carrier C loaded on the carrier loading section 22A to the first loading section 51. Therefore, the main conveying mechanism 36 can directly take in the substrate W loaded on the first loading section 51 by the first conveying mechanism 26. Therefore, the substrate W can be efficiently conveyed between the first conveying mechanism 26 and the main conveying mechanism 36. Therefore, the processing throughput of the substrate processing apparatus 1 can be appropriately improved.

[0305] The first transport mechanism 26 further performs an inter-layer transport operation to transport the substrate W between two first placement portions 51 provided on different levels 33. Therefore, a transport mechanism that performs only an inter-layer transport operation does not need to be separately provided in the substrate processing apparatus 1. Therefore, the occupied area (installation area) of the substrate processing apparatus 1 can be appropriately reduced.

[0306] As described above, according to the substrate processing apparatus 1 of the first embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the processing throughput of the substrate processing apparatus 1 can be improved.

[0307] The processing units 41 of the 6th to 7th levels 33f-33g respectively perform the first processing on the substrate W. The processing units 41 of the 4th to 5th levels 33d-33e respectively perform the second processing different from the first processing on the substrate W. The first conveying mechanism 26 conveys the substrate W between the first loading unit 51f of the 6th level 33f and the first loading unit 51d of the 4th level 33d. The first conveying mechanism 26 conveys the substrate W between the first loading unit 51g of the 7th level 33g and the first loading unit 51e of the 5th level 33e. In this way, the inter-level conveying operation includes conveying the substrate W between the first loading unit 51f and the first loading unit 51d. The inter-level conveying operation includes conveying the substrate W between the first loading unit 51g and the first loading unit 51e. Therefore, the first processing and the second processing can be efficiently performed on the substrate W.

[0308] The first treatment includes a first pre-exposure treatment (specifically, an anti-reflection film forming treatment). The second treatment includes a second pre-exposure treatment (specifically, a resist film forming treatment). The second pre-exposure treatment is different from the first pre-exposure treatment. Therefore, the first pre-exposure treatment and the second pre-exposure treatment can be efficiently performed on the substrate W.

[0309] The first treatment includes a first liquid treatment (specifically, an antireflection film forming treatment). The second treatment includes a second liquid treatment (specifically, a resist film forming treatment). The second liquid treatment is different from the first liquid treatment. Therefore, the first liquid treatment and the second liquid treatment can be performed efficiently on the substrate.

[0310] The first process includes an antireflection film forming process but does not include a resist film forming process. The second process includes a resist film forming process but does not include an antireflection film forming process. Therefore, the antireflection film forming process and the resist film forming process can be efficiently performed on the substrate W.

[0311] The first transport mechanism 26 transports the substrate W from the first loading parts 51f and 51g to the first loading parts 51d and 51e. In this way, the interlayer transport operation includes transporting the substrate W from the first loading parts 51f and 51g to the first loading parts 51d and 51e. Therefore, the substrate W can be transported from the 6th to 7th layers 33f-33g to the 4th to 5th layers 33d-33e. Therefore, after the anti-reflection film forming process is performed on the substrate W, the resist film forming process can be performed on the substrate W.

[0312] The transport unit 25 transports the substrate W from the carrier C placed on the carrier placement unit 22A to the first placement units 51f to 51g. In this way, the supply operation includes transporting the substrate W from the carrier C placed on the carrier placement unit 22A to the first placement units 51f and 51g. Therefore, the substrate W can be efficiently transported from the carrier C placed on the carrier placement unit 22A to the level 33 (specifically, the 6th to 7th levels 33f to 33g) where the first process is performed.

[0313] The number of the levels 33 for performing the first process is two. Therefore, the first process can be performed on the substrate W in the two levels 33. Therefore, the processing throughput of the substrate processing apparatus 1 can be suitably improved.

[0314] The number of the levels 33 for performing the second process is two. Therefore, the second process can be performed on the substrate in the two levels 33. Therefore, the processing throughput of the substrate processing apparatus 1 can be suitably improved.

[0315] The processing units 41 of the first to third stages 33a to 33c respectively perform the third processing on the substrate W. The third processing includes the development processing. Therefore, the development processing can be performed on the substrate W efficiently.

[0316] The conveyor 25 conveys the substrate W from the first loading portions 51a-51c to the carrier C mounted on the carrier loading portion 22B. In this way, the recovery operation includes conveying the substrate W from the first loading portions 51a-51c to the carrier C mounted on the carrier loading portion 22B. Therefore, the substrate W that has been subjected to the development process can be efficiently conveyed to the carrier C.

[0317] The number of the levels 33 for performing the third process is 3. Therefore, the third process can be performed on the substrates W in the three levels 33. Therefore, the processing throughput of the substrate processing apparatus 1 can be suitably improved.

[0318] Each level 33 is provided with a second loading unit 56. The substrate processing apparatus 1 is provided with an interface unit 71. The interface unit is provided with a conveying unit 73. The conveying unit 73 conveys the substrate W between the second loading unit 56 and the exposure machine EXP. However, the conveying unit 73 does not perform inter-layer conveying operation. Specifically, the conveying unit 73 does not convey the substrate W between two second loading units 56 provided on different levels 33. Therefore, the conveying unit 73 can efficiently convey the substrate W between the level 33 and the exposure machine EXP.

[0319] The interface part 71 includes a cleaning part 91 and a heat treatment part 101. The conveying part 73 also conveys the substrate W to the cleaning part 91 and the heat treatment part 101. As described above, the conveying part 73 does not perform inter-layer conveying operation. Therefore, even when the interface part 71 includes the cleaning part 91 and the heat treatment part 101, it is possible to suppress the excessive increase in the conveying load of the conveying part 73. Therefore, the conveying part 73 can efficiently convey the substrate W to the cleaning part 91 and the heat treatment part 101. In this way, when the interface part 71 includes the cleaning part 91 and the heat treatment part 101, the advantage of the conveying part 73 not performing inter-layer conveying operation is particularly great.

[0320] The first loading section 51 includes: a first transport loading section 52 for loading the substrate W exclusively on the transport section 25; and a first return loading section 53 for loading the substrate W exclusively on the main transport mechanism 36. Since the transport section 25 does not load the substrate W on the first return loading section 53, the transport operation of the transport section 25 can be simplified. Therefore, the transport section 25 can more efficiently transport the substrate W between the carrier C and the stage 33. Similarly, since the main transport mechanism 36 does not load the substrate W on the first transport loading section 52, the transport operation of the main transport mechanism 36 can be simplified. Therefore, the main transport mechanism 36 can more efficiently transport the substrate W.

[0321] The transport unit 25 simultaneously mounts two substrates W on the first transport placement unit 52. The first transport placement unit 52 is configured to be able to mount at least four substrates W on the first transport placement unit 52. Therefore, the transport unit 25 can smoothly perform the operation of placing the substrates W on the first transport placement unit 52.

[0322] The transport unit 25 simultaneously takes two substrates W from the first return mounting unit 53. The first return mounting unit 53 is configured to be able to mount at least four substrates W. Therefore, the transport unit 25 can smoothly perform the operation of taking the substrates W from the first return mounting unit 53.

[0323] The transport unit 25 includes the second transport mechanism 27. Therefore, the transport unit 25 can transport the substrate W more efficiently.

[0324] The first conveying mechanism 26 performs a supply operation. The second conveying mechanism 27 performs a collection operation. Therefore, the conveying unit 25 can appropriately perform both the supply operation and the collection operation.

[0325] The first conveying mechanism 26 does not perform the collecting operation. Therefore, the operation of the first conveying mechanism 26 can be simplified.

[0326] The second transport mechanism 27 does not perform a supply operation. Therefore, the operation of the second transport mechanism 27 can be simplified.

[0327] The level 33out (specifically, the first to third levels 33a-33c) corresponds to the final level. The main transport mechanism 36out of the level 33out performs a dispensing operation to place the substrate W on the first loading portion 51out of the level 33out. The control unit 107 detects the dispensing operation of the main transport mechanism 36out of the level 33out. Based on the detection result of the dispensing operation in the level 33out, the control unit 107 can specify the time when the main transport mechanism 36out of the level 33out actually places the substrate W on the first loading portion 51out.

[0328] The conveying unit 25 conveys the substrate from the first loading unit 51out of the level 33out to the carrier C mounted on the carrier loading unit 22B. In this way, the recovery operation includes conveying the substrate W from the first loading unit 51out to the carrier C mounted on the carrier loading unit 22B. The substrate processing device 1 includes a rack 13 and a carrier conveying mechanism 15. The control unit 107 determines the timing of the operation of the carrier conveying mechanism 15 based on the detection result of the distribution operation of the main conveying mechanism 36out of the level 33out. Therefore, the carrier conveying mechanism 15 can always convey the carrier C to the carrier loading unit 22B at an appropriate time. As a result, the conveying unit 25 can smoothly perform the recovery operation. For example, the recovery operation will not be delayed due to the delay in the conveyance of the carrier C by the carrier conveying mechanism 15. Therefore, it is possible to appropriately prevent the efficiency of the recovery operation by the conveying unit 25 from being reduced. In this way, the collecting operation by the conveying unit 25 and the conveying operation of the carrier C by the carrier conveying mechanism 15 can be appropriately coordinated in terms of time.

[0329] The control unit 107 determines whether the predetermined substrate W to be carried into the carrier C mounted on the rack 13 is mounted on the first mounting portion 51out based on the detection result of the distribution operation of the main transport mechanism 36out of the layer 33out. Then, at the time point when the control unit 107 determines that the predetermined substrate W to be carried into the carrier C mounted on the rack 13 is mounted on the first mounting portion 51out, the control unit 107 starts the operation of the carrier transport mechanism 15 to transport the carrier C from the rack 13 to the carrier mounting portion 22B. Therefore, the carrier transport mechanism 15 can mount an appropriate carrier C on the carrier mounting portion 22B at an appropriate time. For example, before the transport unit 25 starts the recovery operation of the substrate Wb1, the carrier transport mechanism 15 can reliably mount the predetermined carrier Cb containing the substrate Wb1 on the carrier mounting portion 22B. As a result, the transport unit 25 can smoothly perform the recovery operation.

[0330] The substrate processing method of the first embodiment includes a supply step, a processing step, an inter-layer transfer step, and a recovery step. The supply step is to transfer the substrate from the carrier C to at least one of the layers 33. The processing step is to process the substrate W while transferring the substrate W in the layer 33. The inter-layer transfer step is to transfer the substrate W between two different layers 33. The recovery step is to transfer the substrate W from at least one of the layers 33 to the carrier C. Since the substrate processing method includes the inter-layer transfer step, the substrate W can be transferred to at least two or more layers 33. Therefore, the substrate W can be processed in at least two or more layers 33.

[0331] The supply step is performed by one transport mechanism (that is, the first transport mechanism 26). Therefore, the substrate W can be efficiently transported from the carrier C to the level 33. Therefore, the processing step can be efficiently performed. Therefore, the processing throughput of the substrate processing can be appropriately increased.

[0332] The inter-layer transfer step is performed by one transfer mechanism (i.e., the first transfer mechanism 26) that performs the supply step. In other words, the same one transfer mechanism (i.e., the first transfer mechanism 26) performs the supply step and the inter-layer transfer step. Therefore, it is not necessary to separately provide a transfer mechanism that is dedicated to transferring the substrate W between two different levels 33 in the substrate processing apparatus 1. Therefore, the space used to perform the substrate processing method can be appropriately reduced.

[0333] The recovery step is performed by one transport mechanism (that is, the second transport mechanism 27). Therefore, the substrate W can be efficiently transported from the stage 33 to the carrier C. Therefore, the processing step can be efficiently performed. Therefore, the processing throughput of the substrate processing can be appropriately increased.

[0334] The pump chamber 61 is arranged at a position that does not overlap with the layer 33 (specifically, the transport space 35 and the processing unit 41) in a plan view. Therefore, the length of the processing unit 41 in the vertical direction Z (that is, the height of the processing unit 41) can be appropriately prevented from being excessively increased. The length of the processing block 31 in the vertical direction Z can be appropriately prevented from being excessively increased.

[0335] The area of ​​the pump chamber 61 in a plan view is relatively small. Therefore, it is possible to preferably prevent the occupied area of ​​the substrate processing apparatus 1 from being excessively increased.

[0336] [Second embodiment]

[0337] A substrate processing apparatus 1 according to a second embodiment will be described with reference to the drawings. The same components as those of the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.

[0338] Fig.17 It is a top view of the substrate processing apparatus 1 according to the second embodiment. Fig.18 It is a left side view showing the left structure of the substrate processing apparatus 1. The substrate processing apparatus 1 of the second embodiment is different from the substrate processing apparatus 1 of the first embodiment in the structure of the processing unit 31.

[0339] The processing block 31 includes a plurality of (for example, six) layers 33 .

[0340] The liquid processing section 42 of each level 33 includes a plurality of (eg, four) liquid processing units 43 .

[0341] The liquid processing units 43 are arranged in a row in the front-rear direction X.

[0342] Although not shown in the figure, the heat treatment section 47 of each layer 33 includes a plurality (e.g., 15) of heat treatment units 48. The heat treatment units 48 are arranged in a matrix in a side view. For example, the heat treatment units 48 are arranged in five rows in the front-rear direction X and in three stages in the up-down direction Z.

[0343] Reference Fig.18 The processing of the substrate W by each layer 33 is described. For convenience, the layers 33 are referred to as the first layer 33a, the second layer 33b, the third layer 33c, the fourth layer 33d, the fifth layer 33e, and the sixth layer 33f from bottom to top. The first layer 33a is the lowest among the layers 33. The sixth layer 33f is the highest among the layers 33.

[0344] The processing units 41 of the fifth to sixth levels 33e-33f perform the same processing on the substrate W. The processing units 41 of the fifth to sixth levels 33e-33f respectively perform the first processing on the substrate W. The first processing includes an antireflection film forming processing and a resist film forming processing.

[0345] The processing units 41 of the third and fourth layers 33c-33d perform the same processing on the substrate W. The processing units 41 of the third and fourth layers 33c-33d perform the second processing and the development processing on the substrate W respectively. The second processing includes a protective film forming processing for forming a protective film for protecting the resist film on the substrate W. The development processing in the third and fourth layers 33c-33d is specifically a negative development processing.

[0346] The processing units 41 of the first and second layers 33a-33b perform the same processing on the substrate W. The processing units 41 of the first and second layers 33a-33b perform the third processing on the substrate W. The third processing includes a development processing. Specifically, the development processing of the third processing is a positive tone development processing.

[0347] In addition, the first process does not include a protective film forming process and a developing process. The second process does not include an antireflection film forming process, a resist film forming process, and a developing process. The developing process in the third-fourth layer 33c-33d does not include a positive developing process. The third process does not include an antireflection film forming process, a resist film forming process, a protective film forming process, and a negative developing process. Therefore, the first process is different from the second process. The first process is different from the third process. The second process is different from the third process. The third process is different from the developing process in the third-fourth layer 33c-33d.

[0348] The anti-reflection film forming process, the resist film forming process, the protective film forming process, the negative tone developing process, and the positive tone developing process belong to the liquid process. The anti-reflection film forming process, the resist film forming process, and the protective film forming process belong to the pre-exposure process. The negative tone developing process and the positive tone developing process belong to the post-exposure process.

[0349] The first process does not include post-exposure processing. The second process does not include post-exposure processing. The third process does not include pre-exposure processing.

[0350] The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The protective film forming process is an example of the second liquid process in the present invention. The protective film forming process is an example of the second pre-exposure process in the present invention.

[0351] In accordance with the difference in processing between the layers 33, the configuration details of the processing unit 41 are different between the layers 33. This will be described in detail below.

[0352] The liquid processing unit 42 of the 5th to 6th layers 33e-33g uses an anti-reflection film material and a resist film material as a processing liquid. The two liquid processing units 43 of the 5th layer 33e are equivalent to the anti-reflection film coating unit BARC. The remaining two liquid processing units 43 of the 5th layer 33e are equivalent to the resist film coating unit RESIST. Similarly, the two liquid processing units 43 of the 6th layer 33f are equivalent to the anti-reflection film coating unit BARC. The remaining two liquid processing units 43 of the 6th layer 33f are equivalent to the resist film coating unit RESIST.

[0353] The liquid processing unit 42 of the 3rd-4th level 33c-33d uses a protective film material and a developer for negative development as a processing liquid. The two liquid processing units 43 of the 3rd level 33c are equivalent to the protective film coating unit TC. The remaining two liquid processing units 43 of the 3rd level 33c are equivalent to the negative developing unit NTD. Similarly, the two liquid processing units 43 of the 4th level 33d are equivalent to the protective film coating unit TC. The remaining two liquid processing units 43 of the 4th level 33d are equivalent to the negative developing unit NTD.

[0354] The liquid processing unit 42 of the first and second stages 33a-33b uses a developer for positive tone development as a processing liquid. The liquid processing units 43 of the first stage 33a and the second stage 33b correspond to the positive tone developing unit PTD.

[0355] The first treatment further includes a hydrophobic treatment, a heating treatment, and a cooling treatment. Although not shown in the figure, the heat treatment section 47 of the fifth and sixth layers 33e-33f includes a hydrophobic treatment unit AHP, a heating unit HP, and a cooling unit CP as a heat treatment unit 48.

[0356] The second process further includes a heating process and a cooling process. The heat treatment section 47 of the third and fourth stages 33c - 33d includes a heating unit HP and a cooling unit CP as the heat treatment unit 48.

[0357] The third process further includes a heating process and a cooling process. The heat treatment section 47 of the first-second stages 33 a - 33 b includes a heating unit HP and a cooling unit CP as the heat treatment unit 48 .

[0358] The fifth and sixth layers 33e-33f are examples of "layers subjected to the first process" in the present invention. The third and fourth layers 33c-33d are examples of "layers subjected to the second process" in the present invention. The first and second layers 33a-33b are examples of "layers subjected to the third process" in the present invention.

[0359] <Operation of Substrate Processing Apparatus>

[0360] Fig.19A , 19B 19C is a diagram schematically showing an outline of a transport path for a substrate W. The substrate processing apparatus 1 according to the second embodiment has various operation examples. Three operation examples are described below.

[0361] Fig.19A The first operation example is shown. Fig.19A The dot-dash line schematically shows the transport path of the substrate W. In the first operation example, the antireflection film forming process, the resist film forming process, the protective film forming process, and the positive tone developing process are performed on the substrate W. In the first operation example, each substrate W is processed in three levels 33 .

[0362] Fig.19B The second operation example is shown. Fig.19B The conveyance path of the substrate W is schematically indicated by a dashed line. In the second operation example, an antireflection film forming process, a resist film forming process, and a negative tone developing process are performed on the substrate W. In the second operation example, each substrate W is processed in two levels 33 .

[0363] Fig.19C The third operation example is shown. In the third operation example, an antireflection film forming process, a resist film forming process, a protective film forming process, and a positive tone developing process are performed on a portion of the substrate W (hereinafter referred to as the first substrate W). The first substrate W is processed in three levels 33 . Fig.19C The single-dot chain line schematically shows the conveying path of the first substrate W. Furthermore, in the third operation example, the antireflection film forming process, the resist film forming process and the negative tone developing process are performed on another substrate W (hereinafter referred to as the second substrate W). The second substrate W is processed in two levels 33 . Fig.19C The transport path of the second substrate W is schematically indicated by a dotted line.

[0364] The first to third operation examples will be described in detail.

[0365] <<1st Operation Example>>

[0366] Reference Fig.19A The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C on the carrier mounting portion 22A to the first mounting portions 51e and 51f on the fifth and sixth stages 33e to 33f.

[0367] The main transport mechanism 36e-36f of the 5th and 6th layers 33e-33f transports the substrate W from the first loading part 51e-53f to the processing part 41 of the 5th and 6th layers 33e-33f. The processing parts 41 of the 5th and 6th layers 33e-33f respectively perform the first processing on the substrate W. Specifically, the processing parts 41 of the 5th and 6th layers 33e-33f perform the processing including the anti-reflection film forming processing and the resist film forming processing. The main transport mechanism 36e-36f loads the substrate W that has been subjected to the first processing in the 5th and 6th layers 33e-33f on the first loading parts 51e and 51f of the 5th and 6th layers 33e-33f.

[0368] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the substrate W from the first mounting portion 51e to the first mounting portion 51c on the third level 33c. The first transport mechanism 26 transports the substrate W from the first mounting portion 51f to the first mounting portion 51d on the fourth level 33d.

[0369] The main transport mechanism 36c-36d of the 3rd-4th level 33c-33d transports the substrate W from the first loading section 51c-53d to the processing section 41 of the 3rd-4th level 33c-33d. The processing sections 41 of the 3rd-4th level 33c-33d respectively perform the second processing on the substrate W. Specifically, the processing sections 41 of the 3rd-4th level 33c-33d perform the processing including the protective film forming processing on the substrate W. However, the processing sections 41 of the 3rd-4th level 33c-33d do not perform the negative type developing processing on the substrate W. The main transport mechanism 36c-36d places the substrate W that has been subjected to the second processing in the 3rd-4th level 33c-33d on the second loading sections 56c, 56d of the 3rd-4th level 33c-33d.

[0370] The transport unit 73 of the interface unit 71 transports the substrate W from the second loading unit 56c-56d to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second loading unit 56a-56b of the first-second level 33a-33b. At this time, the cleaning unit 91 and the heat treatment unit 101 of the interface unit 71 can also process the substrate W.

[0371] The main transport mechanism 36a-36b of the 1st-2nd level 33a-33b transports the substrate W from the second loading part 56a-56b to the processing part 41 of the 1st-2nd level 33a-33b. The processing parts 41 of the 1st-2nd level 33a-33b respectively perform the third process on the substrate W. Specifically, the processing parts 41 of the 1st-2nd level 33a-33b respectively perform the process including the positive type development process on the substrate W. The main transport mechanism 36a-36b loads the substrate W that has been subjected to the third process in the 1st-2nd level 33a-33b on the first loading parts 51a, 51b of the 1st-2nd level 33a-33b.

[0372] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a and 51b to the carrier C mounted on the carrier mounting portion 22B.

[0373] As described above, in the first operation example, the first conveying mechanism 26 performs the supply operation and the inter-layer conveying operation. The first conveying mechanism 26 does not perform the collection operation. The second conveying mechanism 27 performs the collection operation. The second conveying mechanism 27 does not perform the supply operation and the inter-layer conveying operation. The conveying unit 73 does not perform the inter-layer conveying operation.

[0374] In the first operation example, the substrate W is transported to all the levels 33a to 33f. In the first operation example, the substrate W is processed in all the levels 33a to 33f.

[0375] In the first operation example, the first and second layers 33a-33b are examples of the final layers in the present invention.

[0376] <<Operation Example 2>>

[0377] Reference Fig.19B The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C on the carrier mounting portion 22A to the first mounting portions 51e to 51f.

[0378] The main transport mechanism 36e-36f transports the substrate W from the first loading section 51e-53f to the processing section 41 of the 5th-6th level 33e-33f. The processing section 41 of the 5th-6th level 33e-33f performs the first processing on the substrate W. Specifically, the processing section 41 of the 5th-6th level 33e-33f performs the processing including the anti-reflection film forming processing and the resist film forming processing. The main transport mechanism 36e-36f loads the substrate W that has been subjected to the first processing in the 5th-6th level 33e-33f on the second loading section 56e, 56f.

[0379] The transport unit 73 transports the substrate W from the second mounting units 56e to 56f to the exposure unit EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure unit EXP to the second mounting units 56c to 56d.

[0380] The main transport mechanism 36c-36d transports the substrate W from the second loading section 56c-56d to the processing section 41 of the third and fourth layers 33c-33d. The processing sections 41 of the third and fourth layers 33c-33d perform development processing on the substrate W. Specifically, the processing sections 41 of the third and fourth layers 33c-33d perform processing including negative-tone development processing on the substrate W. However, the processing sections 41 of the third and fourth layers 33c-33d do not perform the second processing on the substrate W. The main transport mechanism 36c-36d places the substrate W that has been subjected to the development processing in the third and fourth layers 33c-33d on the first loading section 51c-51d.

[0381] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51c to 51d to the carrier C mounted on the carrier mounting portion 22B.

[0382] As described above, in the second operation example, the first conveying mechanism 26 performs the supply operation. The first conveying mechanism 26 does not perform the inter-layer conveying operation and the collection operation. The second conveying mechanism 27 performs the collection operation. The second conveying mechanism 27 does not perform the supply operation and the inter-layer conveying operation. Thus, the second operation example does not require the inter-layer conveying operation.

[0383] In the second operation example, the substrate W is transported to only a part of the layers 33. In the second operation example, the substrate W is transported to the third to sixth layers 33c-33f, and the substrate W is not transported to the first to second layers 33a-33b. In the second operation example, the substrate W is processed only in a part of the layers 33. In the second operation example, the substrate W is processed in the third to sixth layers 33c-33f, and the substrate W is not processed in the first to second layers 33a-33b.

[0384] In the second operation example, the third and fourth layers 33c-33d are examples of the final layers in the present invention.

[0385] <<Operation Example 3>>

[0386] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the first substrate W from the carrier C on the carrier mounting portion 22A to the first mounting portion 51e. The first transport mechanism 26 transports the second substrate W from the carrier C on the carrier mounting portion 22A to the first mounting portion 51f.

[0387] The main transport mechanism 36e transports the first substrate W from the first loading section 51e to the processing section 41 on the fifth level 33e. The main transport mechanism 36f transports the second substrate W from the first loading section 51f1 to the processing section 41 on the sixth level 33f. The processing sections 41 on the fifth to sixth levels 33e-33f perform the first processing on the first substrate W and the second substrate W, respectively. Specifically, the processing sections 41 on the fifth to sixth levels 33e-33f perform processing including an anti-reflection film forming processing and a resist film forming processing on the first substrate W and the second substrate W. The main transport mechanism 36e places the first substrate W that has been subjected to the first processing on the fifth level 33e on the first loading section 51e. The main transport mechanism 36f places the second substrate W that has been subjected to the first processing on the sixth level 33f on the second loading section 56f.

[0388] The first transport mechanism 26 performs an inter-layer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first mounting portion 51e to the first mounting portion 51c.

[0389] The main transport mechanism 36c transports the first substrate W from the first loading section 51c to the processing section 41 of the third level 33c. The processing section 41 of the third level 33c performs the second processing on the first substrate W. Specifically, the processing section 41 of the third level 33c performs the processing including the protective film forming processing on the first substrate W. However, the processing section 41 of the third level 33c does not perform the negative type development processing on the first substrate W. The main transport mechanism 36c places the first substrate W that has been subjected to the second processing in the third level 33c on the second loading section 56c.

[0390] The transport unit 73 transports the first substrate W from the second mounting unit 56c to the second mounting unit 56a via the exposure unit EXP. The transport unit 73 transports the second substrate W from the second mounting unit 56f to the second mounting unit 56d via the exposure unit EXP.

[0391] The main transport mechanism 36a transports the first substrate W from the second loading section 56a to the processing section 41 of the first level 33a. The processing section 41 of the first level 33a performs the third process on the first substrate W. Specifically, the processing section 41 of the first level 33a performs a process including a positive type development process on the first substrate W. The main transport mechanism 36a places the first substrate W that has been subjected to the third process in the first level 33a on the first loading section 51a of the first level 33a.

[0392] The main transport mechanism 36d transports the second substrate W from the second loading section 56d to the processing section 41 of the fourth level 33d. The processing section 41 of the fourth level 33d performs a development process on the second substrate W. Specifically, the processing section 41 of the fourth level 33d performs a process including a negative-type development process on the second substrate W. However, the processing section 41 of the fourth level 33d does not perform the second process on the second substrate W. The main transport mechanism 36d places the second substrate W that has been subjected to the development process in the fourth level 33d on the first loading section 51d of the fourth level 33d.

[0393] The second transport mechanism 27 performs the recovery operation. Specifically, the second transport mechanism 27 transports the first substrate W from the first mounting portion 51a to the carrier C mounted on the carrier mounting portion 22B. The second transport mechanism 27 transports the second substrate W from the first mounting portion 51d to the carrier C mounted on the carrier mounting portion 22B.

[0394] As described above, in the third operation example, the first conveying mechanism 26 performs the supply operation and the inter-layer conveying operation. The first conveying mechanism 26 does not perform the recovery operation. The second conveying mechanism 27 performs the recovery operation. The second conveying mechanism 27 does not perform the supply operation and the inter-layer conveying operation.

[0395] In the third operation example, the substrate W is transported to only a part of the layers 33. In the third operation example, the substrate W is transported to the first, third to sixth layers 33a, 33c-33f, and the substrate W is not transported to the second layer 33b. In the third operation example, the substrate W is processed only in a part of the layers 33. In the third operation example, the substrate W is processed in the first, third to sixth layers 33a, 33c-33f, and the substrate W is not processed in the second layer 33b.

[0396] In the third operation example, the first layer 33a and the fourth layer 33d are examples of the final layers in the present invention.

[0397] <Effects of the Second Embodiment>

[0398] The substrate processing apparatus 1 of the second embodiment also has the same effects as the substrate processing apparatus 1 of the first embodiment. For example, since the first transfer mechanism 26 performs the supply operation and the inter-layer transfer operation, the footprint of the substrate processing apparatus 1 can be reduced and the processing throughput of the substrate processing apparatus 1 can be increased.

[0399] The first process performed in the fifth to sixth layers 33e-33f includes an anti-reflection film forming process and a resist film forming process, and the second process performed in the third to fourth layers 33c-33d includes a protective film forming process. Therefore, the anti-reflection film forming process, the resist film forming process, and the protective film forming process can be efficiently performed on the substrate.

[0400] In the first operation example, the first transport mechanism 26 transports the substrate W from the first loading section 51e-51f of the 5th to 6th layers 33e-33f where the first process is performed to the first loading section 51c-51d of the 3rd to 4th layers 33c-33d where the second process is performed. In this way, the inter-layer transport operation includes transporting the substrate W from the first loading section 51e-51f to the first loading section 51c-51d. Therefore, the substrate W can be transported from the layers 33e-33f to the layers 33c-33d. Therefore, after the anti-reflection film forming process and the resist film forming process are performed on the substrate W, the protective film forming process can be performed on the substrate W.

[0401] Similarly, in the third operation example, the first transport mechanism 26 transports the first substrate W from the first mounting portion 51e to the first mounting portion 51c. Therefore, after the first substrate W is subjected to the antireflection film forming process and the resist film forming process, the first substrate W can be subjected to the protective film forming process.

[0402] The processing section 41 of the third and fourth layers 33c-33d performs the development process in addition to the second process. Therefore, the development process can be performed on the substrate W efficiently.

[0403] In the first operation example, the second transport mechanism 27 transports the substrate W from the first loading portions 51a and 51b of the first-second layers 33a-33b to the carrier C. In this way, the recovery operation includes transporting the substrate W from the first loading portions 51a and 51b to the carrier C mounted on the carrier loading portion 22B. Therefore, the substrate W that has been subjected to the third process (development process) can be efficiently transported to the carrier C.

[0404] In the second operation example, the second transport mechanism 27 transports the substrate W from the first loading parts 51c-51d of the third-fourth layers 33c-33d where the second process is performed to the carrier C mounted on the carrier mounting part 22B. In this way, the recovery operation includes transporting the substrate W from the first loading parts 51c-51d to the carrier C mounted on the carrier mounting part 22B. Therefore, the substrate W can be efficiently transported from the layers 33c-33d to the carrier C mounted on the carrier mounting part 22B. Therefore, the substrate W that has been subjected to the development process in the layers 33c-33d can be efficiently transported to the carrier C.

[0405] In the third operation example, the second conveying mechanism 27 conveys the first substrate W and the second substrate W from the first loading portions 51a and 51d of the first and fourth levels 33a and 33d to the carrier C loaded on the carrier loading portion 22B. Therefore, the first substrate W that has been subjected to the third process (development process) and the second substrate W that has been subjected to the development process in the levels 33c-33d can be efficiently conveyed to the carrier C.

[0406] The processing unit 41 of the first-second layer 33a-33b performs the third processing on the substrate W. The third processing includes a processing for developing the substrate W. Therefore, the substrate W can be efficiently subjected to the development processing.

[0407] The processing units 41 of the third and fourth layers 33c-33d perform negative tone development processing, and the processing units 41 of the first and second layers 33a-33b perform positive tone development processing. Therefore, the substrate W can be selectively subjected to negative tone development processing and positive tone development processing.

[0408] The present invention is not limited to the first and second embodiments described above, and can be modified as follows.

[0409] In the first and second embodiments, the first conveying mechanism 26 does not perform a recovery action. However, the present invention is not limited thereto. The first conveying mechanism 26 may also perform a recovery action. For example, the first conveying mechanism 26 may perform a recovery action and an inter-layer conveying action instead of a supply action. For example, the first conveying mechanism 26 may also perform a supply action, a recovery action, and an inter-layer conveying action. Thus, the first conveying mechanism 26 can directly obtain the substrate W placed on the first loading portion 51 by the main conveying mechanism 36. Therefore, the substrate W can be efficiently transferred between the first conveying mechanism 26 and the main conveying mechanism 36. Therefore, the processing capacity of the substrate processing device 1 can be appropriately increased.

[0410] In the first and second embodiments, the second transport mechanism 27 does not perform inter-layer transport. However, the present invention is not limited thereto. For example, the second transport mechanism 27 may perform inter-layer transport. By making both the first transport mechanism 26 and the second transport mechanism 27 perform inter-layer transport, the substrate W can be transported between two different layers 33 more efficiently.

[0411] For example, the second conveying mechanism 27 may also be Fig.11 , 13 For example, the first transport mechanism 26 may transport the substrate W from the first loading unit 51f of the sixth layer 33f to the first loading unit 51d of the fourth layer 33d, and the second transport mechanism 27 may transport the substrate W from the first loading unit 51g of the seventh layer 33g to the first loading unit 51e of the fifth layer 33e.

[0412] For example, the second conveying mechanism 27 may perform at least one of the collecting operation, the supplying operation, and the inter-layer conveying operation. For example, the second conveying mechanism 27 may perform the supplying operation.

[0413] In the first and second embodiments, the first conveying mechanism 26 performs a supplying action but does not perform a recovering action, and the second conveying mechanism 27 performs a recovering action but does not perform a supplying action. However, this is not limited to this. The first conveying mechanism 26 may perform a recovering action but does not perform a supplying action, and the second conveying mechanism 27 may perform a supplying action but does not perform a recovering action. According to this variation, the conveying section 25 may also appropriately perform both a supplying action and a recovering action. Furthermore, the action of the first conveying mechanism 26 may be simplified. The action of the second conveying mechanism 27 may be simplified.

[0414] In the first and second embodiments, the processes performed in each layer 33 are exemplified. However, the present invention is not limited thereto. The processes performed in each layer 33 can be flexibly changed. For example, the processes performed in a part of the layers 33 may include an anti-reflection film forming process, and the processes performed in other layers 33 may include an anti-corrosion film forming process and a protective film forming process. For example, the processes performed in a part of the layers 33 may include an anti-reflection film forming process and a protective film forming process, and the processes performed in other layers 33 may include an anti-corrosion film forming process.

[0415] In the first and second embodiments, as liquid treatment, an anti-reflection film forming process, a resist film forming process, a protective film forming process, and a developing process are exemplified. However, it is not limited to this. A cleaning process is also an example of a liquid treatment. For example, the treatment performed in a part of the layer 33 may also include a cleaning process. For example, the treatment performed in a part of the layer 33 may also include a pre-exposure cleaning process. For example, the treatment performed in a part of the layer 33 may also include a post-exposure cleaning process. For example, the liquid treatment section 42 of a part of the layer 33 may also include a cleaning unit. For example, the liquid treatment section 42 of a part of the layer 33 may also include a pre-exposure cleaning unit. For example, the liquid treatment section 42 of a part of the layer 33 may also include a post-exposure cleaning unit.

[0416] In the first and second embodiments, the first treatment and the second treatment are exemplified. However, it is not limited to this. The first treatment and the second treatment can be flexibly changed. For example, the first treatment may include a part of the anti-reflection film forming treatment, the corrosion resistant film forming treatment, the protective film forming treatment, the developing treatment and the cleaning treatment, and the second treatment may include another part of the corrosion resistant film forming treatment, the protective film forming treatment, the developing treatment and the cleaning treatment. Here, it is preferred that when the first treatment includes the anti-reflection film forming treatment, the second treatment does not include the anti-reflection film forming treatment. Similarly, it is preferred that when the first treatment includes the corrosion resistant film forming treatment, the second treatment does not include the corrosion resistant film forming treatment. It is preferred that when the first treatment includes the protective film forming treatment, the second treatment does not include the protective film forming treatment. It is preferred that when the first treatment includes the developing treatment, the second treatment does not include the developing treatment. It is preferred that when the first treatment includes the cleaning treatment, the second treatment does not include the cleaning treatment. Thus, at least two of the antireflection film process, the resist film forming process, the protection film forming process, the development process, and the cleaning process can be efficiently performed on the substrate W.

[0417] For example, the first process may include an anti-reflection film forming process, and the second process may include a resist film forming process and a protective film forming process. For example, the first process may include an anti-reflection film forming process and a protective film forming process, and the second process may include a resist film forming process. For example, the first process may include an anti-reflection film forming process, a resist film forming process, and a protective film forming process, and the second process may include a developing process.

[0418] In the first and second embodiments, the heat treatment section 101 of the interface section 71 is provided with post-exposure heating units 103 and 105. The heat treatment section 47 of the layer 33 is not provided with a post-exposure heating unit. However, this is not limited to this. For example, the layer 33 may also be provided with a post-exposure heating unit. The heat treatment section 47 of the layer 33 may also be provided with a post-exposure heating unit. For example, in the first embodiment, the heat treatment section 47 of the first to third layers 33a-33c may also be provided with a post-exposure heating unit. For example, in the second embodiment, the heat treatment section 47 of the first to second layers 33a-33b may also be provided with a post-exposure heating unit. For example, in the second embodiment, the heat treatment section 47 of the third to fourth layers 33c-33d may also be provided with a post-exposure heating unit. For example, the post-exposure heating units 103 and 105 of the interface section 71 may also be omitted. For example, the heat treatment section 101 of the interface section 71 may also be omitted.

[0419] In the first embodiment, the first process is performed in the sixth to seventh layers 33f-33g. That is, the number of layers 33 that are subjected to the first process is two. However, the present invention is not limited thereto. The number of layers 33 that are subjected to the first process may be one or three or more.

[0420] In the first embodiment, the second process is performed in the fourth and fifth layers 33d-33e. That is, the number of layers 33 that are subjected to the second process is two. However, this is not limiting. The number of layers 33 that are subjected to the second process may also be one or three or more.

[0421] In the first embodiment, the third process is performed in the first to third layers 33a-33c. That is, the number of layers 33 that perform the third process is three. However, this is not limiting. The number of layers 33 that perform the third process may also be one, two, or four or more.

[0422] For example, the number of layers 33 for the third process may be zero. For example, the first to third layers 33a-33c of the first embodiment may be omitted. In this case, the fourth to fifth layers 33d-33e become examples of the final layers in the present invention. Similarly, the first to second layers 33a-33b of the second embodiment may be omitted.

[0423] The first to fourth modified embodiments will be described with reference to the drawings. The same components as those of the first or second embodiment are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.

[0424] <First Variation Implementation Method>

[0425] Fig. 20 This is a left side view showing the left part structure of the substrate processing apparatus 1 of the first variant embodiment. The substrate processing apparatus 1 of the first variant embodiment has more layers 33 for performing the first process than the substrate processing apparatus 1 of the second embodiment. The substrate processing apparatus 1 of the first variant embodiment has more layers 33 for performing the third process than the substrate processing apparatus 1 of the second embodiment.

[0426] Specifically, the processing block 31 includes a plurality of (e.g., eight) layers 33. For convenience, the layers 33 are referred to as a first layer 33a, a second layer 33b, a third layer 33c, a fourth layer 33d, a fifth layer 33e, a sixth layer 33f, a seventh layer 33g, and an eighth layer 33h. In the second to fourth variant embodiments described below, the layers 33 are also referred to in the same manner.

[0427] The processing units 41 of the 6th to 8th layers 33f-33h perform the same processing on the substrate W. The processing units 41 of the 6th to 8th layers 33f-33h respectively perform the first processing on the substrate W. The first processing includes a resist film forming processing. The first processing may also include an anti-reflection film forming processing, or may not include the anti-reflection film forming processing. The processing units 41 of the 6th to 8th layers 33f-33h respectively include two anti-reflection film coating units BARC and two resist film coating units RESIST.

[0428] The processing unit 41 of the 4th to 5th layers 33d-33e performs the same processing on the substrate W. The processing unit 41 of the 4th to 5th layers 33d-33e performs the second processing and the development processing on the substrate W respectively. The second processing includes the protective film forming processing. The development processing in the 4th to 5th layers 33d-33e is specifically an organic development processing. The organic development processing is to supply a developer containing an organic solvent to the substrate W. The organic solvent is, for example, butyl acetate. The processing unit 41 of the 4th to 5th layers 33d-33e is respectively equipped with two protective film coating units TC and two organic development units SD2.

[0429] The processing units 41 of the first to third layers 33a-33c perform the same processing on the substrate W. The processing units 41 of the first to third layers 33a-33c perform the third processing on the substrate W respectively. The third processing includes a developing processing. The developing processing included in the third processing is specifically an alkali developing processing. The alkali developing processing is to supply an alkaline aqueous solution as a developing solution to the substrate W. The alkaline aqueous solution is, for example, tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH). The processing units 41 of the first to third layers 33a-33c are respectively equipped with four alkali developing units SD1.

[0430] The first process is different from the second process. The first process is different from the third process. The second process is different from the third process. The first process does not include a protective film forming process and a developing process. The second process does not include an anti-reflective film forming process, a resist film forming process, and a developing process. The third process does not include an anti-reflective film forming process, a resist film forming process, and a protective film forming process.

[0431] The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The protective film forming process is an example of the second liquid process in the present invention. The protective film forming process is an example of the second pre-exposure process in the present invention.

[0432] The sixth to eighth layers 33f-33h are examples of "layers subjected to the first process" in the present invention. The fourth to fifth layers 33d-33e are examples of "layers subjected to the second process" in the present invention. The first to third layers 33a-33c are examples of "layers subjected to the third process" in the present invention.

[0433] Figures 21A-21C 22A-22C are diagrams schematically showing an outline of a transport path for a substrate W. For convenience, the first loading section 51 provided on the first to eighth levels 33a-33h is referred to as the first loading section 51a-51h. The second loading section 56 provided on the first to eighth levels 33a-33h is referred to as the second loading section 56a-56h. In the second to fourth variant embodiments described below, each first loading section 51 and each second loading section 56 are also described in the same manner. The following illustrates an operation example of the substrate processing apparatus 1 according to the first variant embodiment.

[0434] Fig.21A The first operation example is shown. Fig.21A The transport path of the substrate W is schematically indicated by a single dotted line. In the first operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a recovery operation. Thus, the substrate W is sequentially subjected to the first treatment, the second treatment, and the third treatment. However, the substrate W is not subjected to the development treatment in the fourth and fifth layers 33d-33e. Therefore, Fig.21A In the embodiment, the symbol "SD2" indicating the organic developing unit disposed in the 4th to 5th layers 33d-33e is omitted. Fig.21A In the figure, the symbols of the processing units that process the substrate W are recorded, and the symbols of the processing units that do not process the substrate W are omitted. In the figures showing other operation examples of the first to fourth variations of the following embodiments, the symbols of the processing units that do not process the substrate W are also omitted. The first operation example is described in detail below.

[0435] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0436] The processing sections 41 of the sixth to eighth layers 33f-33h perform the first processing (more specifically, processing including resist film formation processing) on ​​the substrate W, respectively.

[0437] For example, the processing units 41 of the 6th to 8th layers 33f-33h may respectively perform the anti-reflection film forming process and the resist film forming process on the substrate W. Alternatively, the processing units 41 of the 6th to 8th layers 33f-33h may respectively perform the resist film forming process on the substrate W instead of performing the anti-reflection film forming process on the substrate W. In the other operation examples described below, the first operation may also be performed in the same manner. Furthermore, in the operation examples of the second to fourth variant embodiments described below, the first operation may also be performed in the same manner.

[0438] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the substrate W from the first receiving portions 51f-51h on the sixth to eighth levels 33f-33h to the first receiving portions 51d-51e on the fourth to fifth levels 33d-33e.

[0439] The processing units 41 of the fourth to fifth levels 33d to 33e perform the second processing (more specifically, processing including the protective film forming processing) on ​​the substrate W. However, the processing units 41 of the fourth to fifth levels 33d to 33e do not perform the developing processing on the substrate W.

[0440] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56d-56e on the fourth and fifth stages 33d-33e to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0441] The processing units 41 of the first to third stages 33a to 33c perform a third process (more specifically, including an alkali development process) on the substrate W, respectively.

[0442] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0443] Fig. 21B The second operation example is shown. Fig. 21B The transport path of the substrate W is schematically indicated by a single-dot chain line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a recovery operation. However, in the second operation example, the transport unit 25 does not perform an interlayer transport operation. Thus, the first process and the third process are sequentially performed on the substrate W. However, the second process is not performed on the substrate W. The development process in the fourth and fifth layers 33d-33e is not performed on the substrate W. The second operation example is described in detail below.

[0444] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0445] The processing units 41 of the sixth to eighth levels 33f-33h perform the first processing on the substrate W, respectively.

[0446] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56f-56h on the sixth to eighth stages 33f-33h to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0447] The processing units 41 of the first to third levels 33a to 33c perform the third processing on the substrate W, respectively.

[0448] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0449] Fig. 21C The third operation example is shown. Fig. 21C The transport path of the substrate W is schematically indicated by a single-dot chain line. In the third operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a recovery operation. However, in the third operation example, the transport unit 25 does not perform an interlayer transport operation. Thus, the first process is performed on the substrate W. Thereafter, the substrate W is subjected to a development process in the fourth and fifth layers 33d-33e. However, the second process and the third process are not performed on the substrate W. The third operation example is described in detail below.

[0450] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0451] The processing units 41 of the sixth to eighth levels 33f-33h perform the first processing on the substrate W, respectively.

[0452] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56f-56h on the sixth to eighth levels 33f-33h to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56d-56e on the fourth to fifth levels 33d-33e.

[0453] The processing units 41 of the fourth and fifth layers 33d to 33e perform development processing (more specifically, organic development processing) on ​​the substrate W. However, the processing units 41 of the fourth and fifth layers 33d to 33e do not perform the second processing on the substrate W.

[0454] The second transport mechanism 27 performs the recovery operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51d to 51e on the fourth and fifth stages 33d to 33e to the carrier C placed on the carrier placement portion 22B.

[0455] Fig.22A This shows the fourth action example. Fig.22A The conveying path of the first substrate W is schematically indicated by a single-point chain line, and the conveying path of the second substrate W is schematically indicated by a dotted line. The fourth operation example is equivalent to a combination of the first operation example and the second operation example. In the fourth operation example, the first conveying mechanism 26 performs a supply operation and an interlayer conveying operation. The second conveying mechanism 27 performs a recovery operation. Thus, the first substrate W is sequentially subjected to the first treatment, the second treatment, and the third treatment, and the second substrate W is sequentially subjected to the first treatment and the third treatment. However, the first substrate W is not subjected to the development treatment in the fourth to fifth layers 33d-33e. The second substrate W is not subjected to the second treatment. The second substrate W is not subjected to the development treatment in the fourth to fifth layers 33d-33e. The fourth operation example is described in detail below.

[0456] The first conveying mechanism 26 performs a supply operation. Specifically, the first conveying mechanism 26 conveys the first substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portions 51g-51h on the 7th-8th levels 33g-33h. The first conveying mechanism 26 conveys the second substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portion 51f on the 6th level 33f.

[0457] The processing sections 41 on the seventh to eighth levels 33g to 33h perform the first processing on the first substrate W, respectively. The processing section 41 on the sixth level 33f performs the first processing on the second substrate W.

[0458] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first receiving portions 51g-51h on the seventh and eighth levels 33g-33h to the first receiving portions 51d-51e on the fourth and fifth levels 33d-33e.

[0459] The processing units 41 of the fourth and fifth layers 33d-33e perform the second processing on the first substrate W, respectively.

[0460] The conveying unit 73 of the interface unit 71 conveys the first substrate W from the second loading unit 56d-56e of the 4th-5th level 33d-33e to the exposure machine EXP. The conveying unit 73 conveys the second substrate W from the second loading unit 56f of the 6th level 33f to the exposure machine EXP. Furthermore, the conveying unit 73 conveys the first substrate W from the exposure machine EXP to the second loading unit 56b-56c of the 2nd-3rd level 33b-33c. The conveying unit 73 conveys the second substrate W from the exposure machine EXP to the second loading unit 56a of the 1st level 33a.

[0461] The processing sections 41 on the second and third levels 33b to 33c perform the third process on the first substrate W. The processing section 41 on the first level 33a performs the third process on the second substrate W.

[0462] The second conveying mechanism 27 performs the recovery operation. Specifically, the second conveying mechanism 27 conveys the first substrate W from the first loading portions 51b-51c of the second-third levels 33b-33c to the carrier C mounted on the carrier mounting portion 22B. The second conveying mechanism 27 conveys the second substrate W from the first loading portion 51a of the first level 33a to the carrier C mounted on the carrier mounting portion 22B.

[0463] Fig. 22B This shows the fifth action example. Fig. 22B The conveying path of the first substrate W is schematically indicated by a single-point chain line, and the conveying path of the second substrate W is schematically indicated by a dotted line. The fifth operation example is equivalent to a combination of the first operation example and the third operation example. In the fifth operation example, the first conveying mechanism 26 performs a supply operation and an interlayer conveying operation. The second conveying mechanism 27 performs a recovery operation. Thus, the first substrate W is sequentially subjected to the first treatment, the second treatment, and the third treatment, and the second substrate W is sequentially subjected to the first treatment and the development treatment in the fourth to fifth layers 33d-33e. However, the first substrate W is not subjected to the development treatment in the fourth to fifth layers 33d-33e. The second substrate W is not subjected to the second treatment and the third treatment. The fifth operation example is described in detail below.

[0464] The first conveying mechanism 26 performs a supply operation. Specifically, the first conveying mechanism 26 conveys the first substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portions 51g-51h on the 7th-8th levels 33g-33h. The first conveying mechanism 26 conveys the second substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portion 51f on the 6th level 33f.

[0465] The processing sections 41 on the seventh to eighth levels 33g to 33h perform the first processing on the first substrate W, respectively. The processing section 41 on the sixth level 33f performs the first processing on the second substrate W.

[0466] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first receiving portions 51g to 51h on the seventh to eighth levels 33g to 33h to the first receiving portion 51e on the fifth level 33e.

[0467] The processing unit 41 on the fifth level 33 e performs the second processing on the first substrate W.

[0468] The conveying unit 73 of the interface unit 71 conveys the first substrate W from the second loading unit 56e of the fifth level 33e to the exposure machine EXP. The conveying unit 73 conveys the second substrate W from the second loading unit 56f of the sixth level 33f to the exposure machine EXP. Furthermore, the conveying unit 73 conveys the first substrate W from the exposure machine EXP to the second loading units 56b-56c of the second-third levels 33b-33c. The conveying unit 73 conveys the second substrate W from the exposure machine EXP to the second loading unit 56d of the fourth level 33d.

[0469] The processing units 41 of the second and third layers 33b to 33c perform the third processing (more specifically, alkali development processing) on ​​the first substrate W. The processing unit 41 of the fourth layer 33d performs the development processing (more specifically, organic development processing) on ​​the second substrate W.

[0470] The second conveying mechanism 27 performs the recovery operation. Specifically, the second conveying mechanism 27 conveys the first substrate W from the first loading portions 51b-51c of the second-third levels 33b-33c to the carrier C mounted on the carrier mounting portion 22B. The second conveying mechanism 27 conveys the second substrate W from the first loading portion 51d of the fourth level 33d to the carrier C mounted on the carrier mounting portion 22B.

[0471] Fig. 22C This shows the sixth action example. Fig. 22C The conveying path of the first substrate W is schematically indicated by a single-dot chain line, the conveying path of the second substrate W is schematically indicated by a dotted line, and the conveying path of the third substrate W is schematically indicated by a double-dot chain line. The sixth operation example is equivalent to a combination of the first operation example, the second operation example, and the third operation example. In the sixth operation example, the first conveying mechanism 26 performs a supply operation and an interlayer conveying operation. The second conveying mechanism 27 performs a recovery operation. Thus, the first substrate W is sequentially subjected to the first treatment, the second treatment, and the third treatment, the second substrate W is sequentially subjected to the first treatment and the third treatment, and the third substrate W is sequentially subjected to the first treatment and the development treatment in the fourth to fifth layers 33d-33e. However, the first substrate W is not subjected to the development treatment in the fourth to fifth layers 33d-33e. The second substrate W is not subjected to the second treatment and the development treatment in the fourth to fifth layers 33d-33e. The third substrate W is not subjected to the second treatment and the third treatment. The sixth operation example will be described in detail below.

[0472] The first conveying mechanism 26 performs a supply operation. Specifically, the first conveying mechanism 26 conveys the first substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51h on the eighth level 33h. The first conveying mechanism 26 conveys the second substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51g on the seventh level 33g. The first conveying mechanism 26 conveys the third substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51f on the sixth level 33f.

[0473] The processing section 41 on the eighth level 33h performs the first process on the first substrate W. The processing section 41 on the seventh level 33g performs the first process on the second substrate W. The processing section 41 on the sixth level 33f performs the first process on the third substrate W.

[0474] The first transport mechanism 26 performs an inter-layer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first mounting portion 51h on the eighth layer 33h to the first mounting portion 51e on the fifth layer 33e.

[0475] The processing unit 41 on the fifth level 33 e performs the second processing on the first substrate W.

[0476] The conveying unit 73 of the interface unit 71 conveys the first substrate W from the second loading unit 56e of the fifth level 33e to the exposure machine EXP. The conveying unit 73 conveys the second substrate W from the second loading unit 56g of the seventh level 33g to the exposure machine EXP. The conveying unit 73 conveys the third substrate W from the second loading unit 56f of the sixth level 33f to the exposure machine EXP. Furthermore, the conveying unit 73 conveys the first substrate W from the exposure machine EXP to the second loading unit 56c of the third level 33c. The conveying unit 73 conveys the second substrate W from the exposure machine EXP to the second loading unit 56b of the second level 33b. The conveying unit 73 conveys the third substrate W from the exposure machine EXP to the second loading unit 56d of the fourth level 33d.

[0477] The processing unit 41 of the third layer 33c performs the third processing (more specifically, alkali development processing) on ​​the first substrate W. The processing unit 41 of the second layer 33b performs the third processing on the second substrate W. The processing unit 41 of the fourth layer 33d performs development processing (more specifically, organic development processing) on ​​the third substrate W.

[0478] The second conveying mechanism 27 performs a recovery operation. Specifically, the second conveying mechanism 27 conveys the first substrate W from the first loading portion 51c of the third level 33c to the carrier C mounted on the carrier mounting portion 22B. The second conveying mechanism 27 conveys the second substrate W from the first loading portion 51b of the second level 33b to the carrier C mounted on the carrier mounting portion 22B. The second conveying mechanism 27 conveys the third substrate W from the first loading portion 51d of the fourth level 33d to the carrier C mounted on the carrier mounting portion 22B.

[0479] Although not shown in the drawings, the substrate processing apparatus 1 according to the first modified embodiment can perform operations other than the first to sixth operation examples.

[0480] For example, the substrate processing apparatus 1 of the first variant embodiment can perform the seventh operation example which is a combination of the second operation example and the third operation example. In the seventh operation example, the first conveying mechanism 26 performs the supply operation. The second conveying mechanism 27 performs the recovery operation. However, in the seventh operation example, the conveying unit 25 does not perform the inter-layer conveying operation. Thus, the first substrate W is subjected to the first process and the third process, and the second substrate W is subjected to the first process and the development process in the fourth-fifth layers 33d-33e.

[0481] As described above, according to the first modified embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the processing throughput of the substrate processing apparatus 1 can be increased.

[0482] <Second Variation Implementation Method>

[0483] Fig.23 This is a left side view showing the left part structure of the substrate processing apparatus 1 of the second variant embodiment. The substrate processing apparatus 1 of the second variant embodiment has more layers for performing the first process than the second embodiment. The substrate processing apparatus 1 of the second variant embodiment has more layers for performing the third process than the second embodiment. The second process of the second variant embodiment includes a cleaning process.

[0484] Specifically, the processing units 41 of the 6th to 8th layers 33f-33h perform the same processing on the substrate W. The processing units 41 of the 6th to 8th layers 33f-33h respectively perform the first processing on the substrate W. The first processing includes a resist film forming processing. The first processing may also include an anti-reflection film forming processing, or may not include an anti-reflection film forming processing. The processing units 41 of the 6th to 8th layers 33f-33h respectively include two anti-reflection film coating units BARC and two resist film coating units RESIST.

[0485] The processing units 41 of the 4th to 5th layers 33d-33e perform the same processing on the substrate W. The processing units 41 of the 4th to 5th layers 33d-33e perform the second processing and the developing processing on the substrate W, respectively. The second processing includes a cleaning process. The cleaning process is to clean the substrate W by supplying a cleaning liquid to the substrate W. The developing processing in the 4th to 5th layers 33d-33e is specifically an organic developing processing. The processing units 41 of the 4th to 5th layers 33d-33e are respectively provided with two cleaning processing units SS and two organic developing units SD2.

[0486] Here, the cleaning process may be either the first cleaning process or the second cleaning process. The first cleaning process cleans the surface of the substrate W. The second cleaning process cleans at least one of the back surface of the substrate W and the peripheral edge of the substrate W.

[0487] The cleaning process may be performed while rotating the substrate W or without rotating the substrate W. The cleaning process may be performed by using a brush to clean the substrate W or without using a brush. The cleaning process may be performed by, for example, contacting the substrate W with a brush to clean the substrate W. The cleaning process may be performed by drying the substrate W after cleaning the substrate W.

[0488] The cleaning processing unit SS may be any one of a first cleaning processing unit that performs a first cleaning processing and a second cleaning processing unit that performs a second cleaning processing.

[0489] The processing units 41 of the first to third levels 33a-33c perform the same processing on the substrate W. The processing units 41 of the first to third levels 33a-33c perform the third processing on the substrate W. The third processing includes a developing process. Specifically, the developing process included in the third processing is an alkali developing process. The processing units 41 of the first to third levels 33a-33c each include four alkali developing units SD1.

[0490] The first treatment is different from the second treatment. The first treatment is different from the third treatment. The second treatment is different from the third treatment. The first treatment does not include a cleaning treatment and a developing treatment. The second treatment does not include an anti-reflection film forming treatment, a resist film forming treatment, and a developing treatment. The third treatment does not include an anti-reflection film forming treatment, a resist film forming treatment, and a cleaning treatment.

[0491] The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The cleaning process is an example of the second liquid process in the present invention. The cleaning process is an example of the second pre-exposure process in the present invention.

[0492] The sixth to eighth layers 33f-33h are examples of "layers subjected to the first process" in the present invention. The fourth to fifth layers 33d-33e are examples of "layers subjected to the second process" in the present invention. The first to third layers 33a-33c are examples of "layers subjected to the third process" in the present invention.

[0493] Figures 24A-24C 2 is a diagram schematically showing an outline of a transport path for a substrate W. An operation example of the substrate processing apparatus 1 according to the second modified embodiment will be described below.

[0494] Fig.24A The first operation example is shown. Fig.24A The transport path of the substrate W is schematically indicated by a single-dot chain line. In the first operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a recovery operation. Thus, the substrate W is sequentially subjected to the first process, the second process, and the third process. However, the substrate W is not subjected to the development process in the fourth and fifth layers 33d-33e. The first operation example is specifically described below.

[0495] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0496] The processing sections 41 of the sixth to eighth layers 33f-33h perform the first processing (more specifically, processing including resist film formation processing) on ​​the substrate W, respectively.

[0497] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the substrate W from the first receiving portions 51f-51h on the sixth to eighth levels 33f-33h to the first receiving portions 51d-51e on the fourth to fifth levels 33d-33e.

[0498] The processing units 41 of the fourth and fifth levels 33d to 33e perform the second processing (more specifically, processing including cleaning processing) on ​​the substrate W, respectively.

[0499] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56d-56e on the fourth and fifth stages 33d-33e to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0500] The processing units 41 of the first to third stages 33a to 33c perform a third process (more specifically, a process including an alkali development process) on the substrate W, respectively.

[0501] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0502] Fig. 24B The second operation example is shown. Fig. 24B The transport path of the substrate W is schematically indicated by a single-point chain line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a recovery operation. However, in the second operation example, the transport unit 25 does not perform an interlayer transport operation. Thus, the first process and the third process are sequentially performed on the substrate W. However, the second process is not performed on the substrate W. The development process in the fourth and fifth layers 33d-33e is not performed on the substrate W. The second operation example is described in detail below.

[0503] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0504] The processing units 41 of the sixth to eighth levels 33f-33h perform the first processing on the substrate W, respectively.

[0505] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56f-56h on the sixth to eighth stages 33f-33h to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0506] The processing units 41 of the first to third levels 33a to 33c perform the third processing on the substrate W, respectively.

[0507] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0508] Fig.24C The third operation example is shown. Fig.24C The transport path of the substrate W is schematically indicated by a single-dot chain line. In the third operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a recovery operation. However, in the third operation example, the transport unit 25 does not perform an interlayer transport operation. Thus, the first process is performed on the substrate W. Thereafter, the substrate W is subjected to a development process in the fourth and fifth layers 33d-33e. However, the second process and the third process are not performed on the substrate W. The third operation example is described in detail below.

[0509] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0510] The processing units 41 of the sixth to eighth levels 33f-33h perform the first processing on the substrate W, respectively.

[0511] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56f-56h on the sixth to eighth levels 33f-33h to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56d-56e on the fourth to fifth levels 33d-33e.

[0512] The processing units 41 of the fourth and fifth layers 33 d - 33 e perform development processing (more specifically, organic development processing) on ​​the substrate W, respectively.

[0513] The second transport mechanism 27 performs the recovery operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51d to 51e on the fourth and fifth stages 33d to 33e to the carrier C placed on the carrier placement portion 22B.

[0514] Although not shown in the drawings, the substrate processing apparatus 1 according to the second modified embodiment can perform operations other than the first to third operation examples.

[0515] For example, the substrate processing apparatus 1 of the second variation can perform a fourth operation example corresponding to a combination of the first operation example and the second operation example. In the fourth operation example, for example, the first substrate W is sequentially subjected to the first process, the second process, and the third process, and the second substrate W is sequentially subjected to the first process and the third process.

[0516] For example, the substrate processing apparatus 1 of the second variation embodiment can perform a fifth operation example which is a combination of the first operation example and the third operation example. In the fifth operation example, for example, the first substrate W is sequentially subjected to the first process, the second process, and the third process, and the second substrate W is sequentially subjected to the first process and the development process in the fourth to fifth layers 33d-33e.

[0517] For example, the substrate processing apparatus 1 of the second variation embodiment can perform a sixth operation example which is a combination of the first operation example, the second operation example, and the third operation example. In the sixth operation example, for example, the first substrate W is sequentially subjected to the first process, the second process, and the third process, the second substrate W is sequentially subjected to the first process and the third process, and the third substrate W is sequentially subjected to the first process and the development process in the fourth-fifth layers 33d-33e.

[0518] For example, the substrate processing apparatus 1 of the second variation embodiment can perform a seventh operation example which is a combination of the second operation example and the third operation example. In the seventh operation example, for example, the first substrate W is sequentially subjected to the first process and the third process, and the second substrate W is sequentially subjected to the first process and the development process in the fourth-fifth layers 33d-33e.

[0519] In the fourth to sixth operation examples, the first transport mechanism 26 performs, for example, a supply operation and an inter-layer transport operation. In the inter-layer transport operation, the first transport mechanism 26 transports the first substrate W from one or two layers 33f-33h for the first process to one or two layers 33d-33e for the second process. The second transport mechanism 27 performs, for example, a recovery operation.

[0520] In the seventh operation example, the first conveying mechanism 26 performs, for example, a supply operation. The second conveying mechanism 27 performs, for example, a collection operation. However, in the seventh operation example, the conveying unit 25 does not perform an inter-layer conveying operation.

[0521] As described above, according to the second modified embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the processing throughput of the substrate processing apparatus 1 can be increased.

[0522] <Third Variation Implementation Method>

[0523] Fig.25 This is a left side view showing the left part structure of the substrate processing apparatus 1 of the third variant embodiment. The substrate processing apparatus 1 of the third variant embodiment has more layers for performing the first process than the second embodiment. The substrate processing apparatus 1 of the third variant embodiment has more layers for performing the third process than the second embodiment. The second process of the second variant embodiment includes a cleaning process. In the second variant embodiment, the processing unit 41 of the layer 33 performing the second process does not perform a developing process.

[0524] Specifically, the processing units 41 of the 6th to 8th layers 33f-33h perform the same processing on the substrate W. The processing units 41 of the 6th to 8th layers 33f-33h respectively perform the first processing on the substrate W. The first processing includes a resist film forming processing. The first processing may also include an anti-reflection film forming processing, or may not include an anti-reflection film forming processing. The processing units 41 of the 6th to 8th layers 33f-33h respectively include two anti-reflection film coating units BARC and two resist film coating units RESIST.

[0525] The processing units 41 of the 4th to 5th levels 33d-33e perform the same processing on the substrate W. The processing units 41 of the 4th to 5th levels 33d-33e perform the second processing on the substrate W respectively. The second processing includes a cleaning processing. Specifically, the cleaning processing includes at least one of the first cleaning processing and the second cleaning processing. The first cleaning processing and the second cleaning processing both clean the substrate W by supplying a cleaning liquid to the substrate W. The first cleaning processing is to clean the surface of the substrate W. The second cleaning processing is to clean at least one of the back surface of the substrate W and the peripheral edge of the substrate W. At least one of the first cleaning processing and the second cleaning processing can clean the substrate W while rotating the substrate W, or can clean the substrate W without rotating the substrate W. At least one of the first cleaning processing and the second cleaning processing can clean the substrate W using a brush, or can clean the substrate W without using a brush. At least one of the first cleaning processing and the second cleaning processing can also clean the substrate W by, for example, contacting the substrate W with a brush. At least one of the first cleaning process and the second cleaning process may dry the substrate W after cleaning the substrate W. The processing sections 41 of the fourth and fifth levels 33d-33e each include two first cleaning units SSA for performing the first cleaning process and two second cleaning units SSB for performing the second cleaning process.

[0526] The processing units 41 of the first to third layers 33a-33c perform the same processing on the substrate W. The processing units 41 of the first to third layers 33a-33c perform the third processing on the substrate W. The third processing includes a developing process. The developing process included in the third processing is, for example, an alkali developing process. Alternatively, the developing process included in the third processing may also be an organic developing process. The processing units 41 of the first to third layers 33a-33c each include four developing units SD.

[0527] The first treatment is different from the second treatment. The first treatment is different from the third treatment. The second treatment is different from the third treatment. The first treatment does not include a cleaning treatment and a developing treatment. The second treatment does not include an anti-reflection film forming treatment, a resist film forming treatment, and a developing treatment. The third treatment does not include an anti-reflection film forming treatment, a resist film forming treatment, and a cleaning treatment.

[0528] The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The cleaning process is an example of the second liquid process in the present invention. The cleaning process is an example of the second pre-exposure process in the present invention.

[0529] The sixth to eighth layers 33f-33h are examples of "layers subjected to the first process" in the present invention. The fourth to fifth layers 33d-33e are examples of "layers subjected to the second process" in the present invention. The first to third layers 33a-33c are examples of "layers subjected to the third process" in the present invention.

[0530] Figures 26A-26C 1 is a diagram schematically showing an outline of a transport path for a substrate W. An operation example of the substrate processing apparatus 1 according to the third modified embodiment will be described below.

[0531] Fig.26A The first operation example is shown. Fig.26A The transport path of the substrate W is schematically indicated by a single-dot chain line. In the first operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a recovery operation. Thus, the substrate W is sequentially subjected to the first process, the second process, and the third process. The first operation example will be specifically described below.

[0532] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0533] The processing sections 41 of the sixth to eighth layers 33f-33h perform the first processing (more specifically, processing including resist film formation processing) on ​​the substrate W, respectively.

[0534] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the substrate W from the first receiving portions 51f-51h on the sixth to eighth levels 33f-33h to the first receiving portions 51d-51e on the fourth to fifth levels 33d-33e.

[0535] The processing units 41 of the fourth and fifth levels 33d to 33e perform the second processing (more specifically, processing including cleaning processing) on ​​the substrate W, respectively.

[0536] Here, the processing units 41 of the 4th to 5th levels 33d-33e respectively perform at least one of the first cleaning process and the second cleaning process on the substrate W. For example, the processing units 41 of the 4th to 5th levels 33d-33e may respectively perform only the first cleaning process on the substrate W, and not perform the second cleaning process on the substrate W. For example, the processing units 41 of the 4th to 5th levels 33d-33e may respectively perform only the second cleaning process on the substrate W, and not perform the first cleaning process on the substrate W. For example, the processing units 41 of the 4th to 5th levels 33d-33e may respectively perform both the first cleaning process and the second cleaning process on the substrate W. In this case, the processing units 41 of the 4th to 5th levels 33d-33e may respectively perform the first cleaning process and the second cleaning process on the substrate W in sequence. Alternatively, the processing units 41 of the fourth and fifth levels 33d-33e may perform the second cleaning process and the first cleaning process on the substrate W in sequence, respectively.

[0537] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56d-56e on the fourth and fifth stages 33d-33e to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0538] The processing units 41 of the first to third stages 33a to 33c perform a third process (more specifically, a process including a development process) on the substrate W, respectively.

[0539] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0540] Fig.26B The second operation example is shown. Fig.26B The transport path of the substrate W is schematically indicated by a single dot-dashed line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a recovery operation. However, in the second operation example, the transport unit 25 does not perform an interlayer transport operation. Thus, the first process and the third process are sequentially performed on the substrate W. However, the second process is not performed on the substrate W. The second operation example is described in detail below.

[0541] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0542] The processing units 41 of the sixth to eighth levels 33f-33h perform the first processing on the substrate W, respectively.

[0543] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56f-56h on the sixth to eighth stages 33f-33h to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0544] The processing units 41 of the first to third levels 33a to 33c perform the third processing on the substrate W, respectively.

[0545] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0546] Fig.26C The third operation example is shown. Fig.26C The conveying path of the first substrate W is schematically indicated by a single-point chain line, and the conveying path of the second substrate W is schematically indicated by a dotted line. The third operation example is equivalent to a combination of the first operation example and the second operation example. In the third operation example, the first conveying mechanism 26 performs a supply operation and an interlayer conveying operation. The second conveying mechanism 27 performs a recovery operation. Thus, the first substrate W is sequentially subjected to the first process, the second process, and the third process, and the second substrate W is sequentially subjected to the first process and the third process. However, the second substrate W is not subjected to the second process. The third operation example is specifically described below.

[0547] The first conveying mechanism 26 performs a supply operation. Specifically, the first conveying mechanism 26 conveys the first substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portions 51g-51h on the 7th-8th levels 33g-33h. The first conveying mechanism 26 conveys the second substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portion 51f on the 6th level 33f.

[0548] The processing sections 41 on the seventh to eighth levels 33g to 33h perform the first processing on the first substrate W, respectively. The processing section 41 on the sixth level 33f performs the first processing on the second substrate W.

[0549] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first receiving portions 51g-51h on the seventh and eighth levels 33g-33h to the first receiving portions 51d-51e on the fourth and fifth levels 33d-33e.

[0550] The processing units 41 of the fourth and fifth layers 33d-33e perform the second processing on the first substrate W, respectively.

[0551] The conveying unit 73 of the interface unit 71 conveys the first substrate W from the second loading unit 56d-56e of the 4th-5th level 33d-33e to the exposure machine EXP. The conveying unit 73 conveys the second substrate W from the second loading unit 56f of the 6th level 33f to the exposure machine EXP. Furthermore, the conveying unit 73 conveys the first substrate W from the exposure machine EXP to the second loading unit 56b-56c of the 2nd-3rd level 33b-33c. The conveying unit 73 conveys the second substrate W from the exposure machine EXP to the second loading unit 56a of the 1st level 33a.

[0552] The processing sections 41 on the second and third levels 33b to 33c perform the third process on the first substrate W. The processing section 41 on the first level 33a performs the third process on the second substrate W.

[0553] The second conveying mechanism 27 performs the recovery operation. Specifically, the second conveying mechanism 27 conveys the first substrate W from the first loading portions 51b-51c of the second-third levels 33b-33c to the carrier C mounted on the carrier mounting portion 22B. The second conveying mechanism 27 conveys the second substrate W from the first loading portion 51a of the first level 33a to the carrier C mounted on the carrier mounting portion 22B.

[0554] As described above, according to the third modified embodiment, it is also possible to reduce the footprint of the substrate processing apparatus 1 and improve the processing throughput of the substrate processing apparatus 1 .

[0555] The fourth and fifth layers 33d-33e of the third variation embodiment may be further modified as follows. That is, the second treatment performed in the fourth and fifth layers 33d-33e may include a protective film forming treatment in addition to a cleaning treatment. In this case, the protective film forming treatment and the cleaning treatment are examples of the second liquid treatment in the present invention. The protective film forming treatment and the cleaning treatment are examples of the second pre-exposure treatment in the present invention.

[0556] For example, the second process may include a protective film forming process, a first cleaning process, and a second cleaning process. The fourth and fifth levels 33d-33e may include a first cleaning process unit SSA, a second cleaning process unit SSB, and a protective film forming process unit TC, respectively.

[0557] For example, the second process may include the protective film forming process and the first cleaning process, but not the second cleaning process. The fourth and fifth levels 33d-33e may include the first cleaning process unit SSA and the protective film forming process unit TC, respectively. The fourth and fifth levels 33d-33e may not include the second cleaning process unit SSB, respectively.

[0558] For example, the second process may include a protective film forming process and a second cleaning process, but not include a first cleaning process. The fourth and fifth levels 33d-33e may include a second cleaning process unit SSB and a protective film forming process unit TC, respectively. The fourth and fifth levels 33d-33e may not include a first cleaning process unit SSA, respectively.

[0559] <Fourth Variation Implementation Method>

[0560] Fig. 27 This is a left side view showing the left part structure of the substrate processing apparatus 1 of the fourth variant embodiment. The substrate processing apparatus 1 of the fourth variant embodiment has more layers for performing the first process than the second embodiment. The substrate processing apparatus 1 of the fourth variant embodiment has more layers for performing the second process than the second embodiment. In the fourth variant embodiment, the processing unit 41 of the layer 33 for performing the second process can further perform two types of development processes. The substrate processing apparatus 1 of the fourth variant embodiment does not have the layer 33 for performing the third process.

[0561] Specifically, the processing units 41 of the 6th to 8th layers 33f-33h perform the same processing on the substrate W. The processing units 41 of the 6th to 8th layers 33f-33h respectively perform the first processing on the substrate W. The first processing includes a resist film forming processing. The first processing may also include an anti-reflection film forming processing, or may not include an anti-reflection film forming processing. The processing units 41 of the 6th to 8th layers 33f-33h respectively include two anti-reflection film coating units BARC and two resist film coating units RESIST.

[0562] The processing units 41 of the 1st to 5th layers 33a-33e perform the same processing on the substrate W. The processing units 41 of the 1st to 5th layers 33a-33e perform the second processing and the developing processing on the substrate W respectively. The second processing includes the cleaning processing. Specifically, the developing processing in the 1st to 5th layers 33a-33e is to selectively perform either the alkali developing processing or the organic developing processing. The processing units 41 of the 1st to 5th layers 33a-33e are respectively equipped with one cleaning processing unit SS, two alkali developing units SD1 and one organic developing unit SD2.

[0563] The first process is different from the second process. The first process does not include a cleaning process and a developing process. The second process does not include an antireflection film forming process, a resist film forming process, and a developing process.

[0564] The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The cleaning process is an example of the second liquid process in the present invention. The cleaning process is an example of the second pre-exposure process in the present invention.

[0565] The sixth to eighth layers 33f-33h are examples of "layers subjected to the first process" in the present invention. The first to fifth layers 33a-33e are examples of "layers subjected to the second process" in the present invention.

[0566] Figures 28A-28C 1 is a diagram schematically showing an outline of a transport path for a substrate W. An operation example of the substrate processing apparatus 1 according to the fourth modified embodiment will be described below.

[0567] Fig.28A The first operation example is shown. Fig.28A The transport path of the substrate W is schematically indicated by a single-dot chain line. In the first operation example, the first transport mechanism 26 performs a supply operation and an inter-layer transport operation. The second transport mechanism 27 performs a recovery operation. Thus, the first process and the second process are sequentially performed on the substrate W. Thereafter, the substrate W is subjected to a development process in the first to fifth layers 33a-33e. The first operation example is specifically described below.

[0568] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0569] The processing sections 41 of the sixth to eighth layers 33f-33h perform the first processing (more specifically, processing including resist film formation processing) on ​​the substrate W, respectively.

[0570] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the substrate W from the first receiving portions 51f-51h on the sixth to eighth levels 33f-33h to the first receiving portions 51d-51e on the fourth to fifth levels 33d-33e.

[0571] The processing units 41 of the fourth and fifth levels 33d to 33e perform the second processing (more specifically, processing including cleaning processing) on ​​the substrate W, respectively.

[0572] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56d-56e on the fourth and fifth stages 33d-33e to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0573] The processing units 41 of the first to third stages 33a to 33c perform development processing on the substrate W, respectively.

[0574] In more detail, the processing units 41 of the 1st to 3rd layers 33a-33c respectively perform either an alkali development process or an organic development process on the substrate W. For example, the substrate W may be subjected to an alkali development process in the 1st to 3rd layers 33a-33c. For example, the substrate W may be subjected to an organic development process in the 1st to 3rd layers 33a-33c. For example, the substrate W may be subjected to an alkali development process in a part of the 1st to 3rd layers 33a-33c, and the substrate W may be subjected to an organic development process in another part of the 1st to 3rd layers 33a-33c. In the other operation examples described below, the development process in the 1st to 3rd layers 33a-33c may also be performed in the same manner.

[0575] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0576] Fig.28B The second operation example is shown. Fig.28B The transport path of the substrate W is schematically indicated by a single-dot chain line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a recovery operation. However, in the second operation example, the transport unit 25 does not perform an interlayer transport operation. Thus, the first process is performed on the substrate W. Thereafter, the substrate W is subjected to a development process in the first to fifth layers 33a-33e. However, the second process is not performed on the substrate W. The second operation example is described in detail below.

[0577] The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51f to 51h on the sixth to eighth stages 33f to 33h.

[0578] The processing units 41 of the sixth to eighth levels 33f-33h perform the first processing on the substrate W, respectively.

[0579] The transport unit 73 of the interface unit 71 transports the substrate W from the second mounting units 56f-56h on the sixth to eighth stages 33f-33h to the exposure machine EXP. Furthermore, the transport unit 73 transports the substrate W from the exposure machine EXP to the second mounting units 56a-56c on the first to third stages 33a-33c.

[0580] The processing units 41 of the first to third stages 33a to 33c perform development processing on the substrate W, respectively.

[0581] The second transport mechanism 27 performs the collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement portions 51a to 51c of the first to third stages 33a to 33c to the carrier C placed on the carrier placement portion 22B.

[0582] Fig.28C The third operation example is shown. Fig.28C The conveying path of the first substrate W is schematically indicated by a single-point chain line, and the conveying path of the second substrate W is schematically indicated by a dotted line. The third operation example is equivalent to a combination of the first operation example and the second operation example. In the third operation example, the first conveying mechanism 26 performs a supply operation and an interlayer conveying operation. The second conveying mechanism 27 performs a recovery operation. Thus, the first substrate W is sequentially subjected to the first treatment and the second treatment, and the second substrate W is subjected to the first treatment. Thereafter, the first substrate W and the second substrate W are subjected to the development treatment in the first to third layers 33a-33c. However, the second treatment is not performed on the second substrate W. The third operation example is described in detail below.

[0583] The first conveying mechanism 26 performs a supply operation. Specifically, the first conveying mechanism 26 conveys the first substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portions 51g-51h on the 7th-8th levels 33g-33h. The first conveying mechanism 26 conveys the second substrate W from the carrier C placed on the carrier placement portion 22A to the first placement portion 51f on the 6th level 33f.

[0584] The processing sections 41 on the seventh to eighth levels 33g to 33h perform the first processing on the first substrate W, respectively. The processing section 41 on the sixth level 33f performs the first processing on the second substrate W.

[0585] The first transport mechanism 26 performs inter-layer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first receiving portions 51g-51h on the seventh and eighth levels 33g-33h to the first receiving portions 51d-51e on the fourth and fifth levels 33d-33e.

[0586] The processing units 41 of the fourth and fifth layers 33d-33e perform the second processing on the first substrate W, respectively.

[0587] The conveying unit 73 of the interface unit 71 conveys the first substrate W from the second loading unit 56d-56e of the 4th-5th level 33d-33e to the exposure machine EXP. The conveying unit 73 conveys the second substrate W from the second loading unit 56f of the 6th level 33f to the exposure machine EXP. Furthermore, the conveying unit 73 conveys the first substrate W from the exposure machine EXP to the second loading unit 56b-56c of the 2nd-3rd level 33b-33c. The conveying unit 73 conveys the second substrate W from the exposure machine EXP to the second loading unit 56a of the 1st level 33a.

[0588] The processing sections 41 of the second and third levels 33b to 33c perform development processing on the first substrate W. The processing section 41 of the first level 33a performs development processing on the second substrate W.

[0589] The second conveying mechanism 27 performs the recovery operation. Specifically, the second conveying mechanism 27 conveys the first substrate W from the first loading portions 51b-51c of the second-third levels 33b-33c to the carrier C mounted on the carrier mounting portion 22B. The second conveying mechanism 27 conveys the second substrate W from the first loading portion 51a of the first level 33a to the carrier C mounted on the carrier mounting portion 22B.

[0590] As described above, according to the fourth variation, the footprint of the substrate processing apparatus 1 can be reduced and the processing throughput of the substrate processing apparatus 1 can be increased.

[0591] The first to fifth layers 33a-33e of the fourth variation may be further modified as described below.

[0592] For example, the cleaning process included in the second process may be any one of the first cleaning process and the second cleaning process. Here, the first cleaning process is to clean the surface of the substrate W. The second cleaning process is to clean at least one of the back surface of the substrate W and the peripheral portion of the substrate W. Specifically, the cleaning process unit SS may be any one of the first cleaning process unit SSA and the second cleaning process unit SSB. The first to fifth levels 33a-33e may also include one first cleaning process unit SSA, two alkali developing units SD1, and one organic developing unit SD2, respectively. Alternatively, the first to fifth levels 33a-33e may also include one second cleaning process unit SSB, two alkali developing units SD1, and one organic developing unit SD2, respectively.

[0593] For example, the cleaning process included in the second process may include both the first cleaning process and the second cleaning process. Specifically, the first to fifth layers 33a-33e may each include one first cleaning process unit SSA, one second cleaning process unit SSB, one alkali developing unit SD1, and one organic developing unit SD2. In this case, the organic developing unit SD2 may be omitted. That is, the first to fifth layers 33a-33e may each include one first cleaning process unit SSA, one second cleaning process unit SSB, and two alkali developing units SD1. Alternatively, the alkali developing unit SD1 may be omitted. That is, the first to fifth layers 33a-33e may each include one first cleaning process unit SSA, one second cleaning process unit SSB, and two organic developing units SD2.

[0594] For example, the second process may include a protective film forming process in addition to the cleaning process. Specifically, the second process may include a protective film forming process and a cleaning process. The 1st to 5th layers 33a-33e may also include 1 cleaning process unit SS, 1 protective film forming process unit TC, 1 alkali developing unit SD1, and 1 organic developing unit SD2, respectively. In this case, the organic developing unit SD2 may also be omitted. In other words, the 1st to 5th layers 33a-33e may also include 1 cleaning process unit SS, 1 protective film forming process unit TC, and 2 alkali developing units SD1, respectively. Alternatively, the alkali developing unit SD1 may also be omitted. In other words, the 1st to 5th layers 33a-33e may also include 1 cleaning process unit SS, 1 protective film forming process unit TC, and 2 organic developing units SD2, respectively.

[0595] For example, the development process performed in the first to fifth layers 33a-33e may include an alkali development process and not include an organic development process. Specifically, the first to fifth layers 33a-33e may each include one cleaning process unit SS and three alkali development units SD1. Alternatively, the first to fifth layers 33a-33e may each include two cleaning process units SS and two alkali development units SD1.

[0596] For example, the development process performed in the first to fifth layers 33a-33e may include an organic development process and not include an alkali development process. Specifically, the first to fifth layers 33a-33e may each include one cleaning process unit SS and three organic development units SD2. Alternatively, the first to fifth layers 33a-33e may each include two cleaning process units SS and two organic development units SD2.

[0597] In the fourth action example of the first variation embodiment, the supply action is to unload the first substrate W and the second substrate W from the carrier C placed on the carrier placement portion 22A. Here, the supply action may be to unload the first substrate W and the second substrate W from different carriers C. For example, the first substrate W may be unloaded from the first carrier C, and the second substrate W may be unloaded from the second carrier C different from the first carrier C. Alternatively, the supply action may be to unload the first substrate W and the second substrate W from the same carrier C. In other action examples of the first to fourth variation embodiments in which the first substrate W and the second substrate W are processed, the supply action may be performed in the same manner.

[0598] In the fourth action example of the first variation embodiment, the recovery action is to move the first substrate W and the second substrate W into the carrier C placed on the carrier placement portion 22B. Here, the recovery action may be to move the first substrate W and the second substrate W into different carriers C. For example, the first substrate W may be moved into the first carrier C, and the second substrate W may be moved into the second carrier C different from the first carrier C. Alternatively, the recovery action may be to move the first substrate W and the second substrate W into the same carrier C. In other action examples of the first to fourth variation embodiments in which the first substrate W and the second substrate W are processed, the recovery action may be performed in the same manner.

[0599] In each of the action examples of the first to fourth variation embodiments, after the second treatment is performed on the substrate W, the third treatment is performed on the substrate W or the development treatment in the layer 33 of the second treatment is performed. However, the present invention is not limited to this. For example, after the second treatment is performed on the substrate W, the substrate W may be recovered to the carrier C without further treatment. In each of the action examples of the first to fourth variation embodiments, after the second treatment is performed on the substrate W, the substrate W is transported to the exposure machine EXP. However, the present invention is not limited to this. For example, after the second treatment is performed on the substrate W, the substrate W may be recovered to the carrier C without transporting the substrate W to the exposure machine EXP.

[0600] In the first and second embodiments, the first transport placement unit 52 is configured to be able to place four substrates W. However, the present invention is not limited thereto. The first transport placement unit 52 may be configured to be able to place five or more substrates W. For example, the first transport placement unit 52 may include five or more placement units 54. Similarly, the configuration of the second transport placement unit 57 may be changed.

[0601] In the first and second embodiments, the first return loading section 53 is configured to be able to load four substrates W. However, the present invention is not limited thereto. The first return loading section 53 may be configured to be able to load five or more substrates W. For example, the first return loading section 53 may also include five or more loading units 54. Similarly, the configuration of the second return loading section 58 may also be changed.

[0602] In the first and second embodiments, the first loading section 51 is arranged to span the conveying space 35 of the level 33 and the conveying space 23 of the loading section 21. However, the present invention is not limited thereto. For example, the entire first loading section 51 may be arranged in the conveying space 35 of the level 33. For example, the entire first loading section 51 may be arranged in a location other than the conveying space 35 of the level 33. For example, the entire first loading section 51 may be arranged in the conveying space 23.

[0603] In the first and second embodiments, the second loading section 56 is provided across the conveying space 35 of the level 33 and the interface section 71. However, the present invention is not limited thereto. For example, the entire second loading section 56 may be arranged in the conveying space 35 of the level 33. For example, the entire second loading section 56 may be arranged in a location other than the conveying space 35 of the level 33. For example, the entire second loading section 56 may be arranged in the interface section 71.

[0604] In the first and second embodiments, the substrate processing apparatus 1 includes the interface portion 71. However, the present invention is not limited thereto and the interface portion 71 may be omitted.

[0605] In the second embodiment, the liquid processing unit 42 of the 5th to 6th layers 33e-33f includes an anti-reflection film coating unit BARC and a resist film coating unit RESIST as the liquid processing unit 43. Here, the ambient gas may be blocked between the anti-reflection film coating unit BARC and the resist film coating unit RESIST. For example, the anti-reflection film coating unit BARC may be accommodated in the first chamber, and the resist film coating unit RESIST may be accommodated in the second chamber different from the first chamber.

[0606] In the second embodiment, the liquid processing section 42 of the third and fourth layers 33c-33d includes a protective film coating unit TC and a negative developing unit NTD as the liquid processing unit 43. Here, the atmosphere may be blocked between the protective film coating unit TC and the negative developing unit NTD. For example, the protective film coating unit TC may be accommodated in the first chamber, and the negative developing unit NTD may be accommodated in the second chamber different from the first chamber.

[0607] In the first and second embodiments, the processing block 31 is provided with a partition wall 34. However, the present invention is not limited thereto. The partition wall 34 may be omitted. In other words, the transport spaces 35 of each level 33 may be interconnected. According to this variation, the processing block 31 and each level 33 can be easily maintained.

[0608] The first and second embodiments and each modified embodiment may be appropriately modified by replacing or combining each configuration with the configuration of other modified embodiments.

[0609] The present invention can be implemented in other specific forms without departing from the spirit or essence of the present invention. Therefore, the scope of the invention should be determined not by the above description but by reference to the appended claims.

[0610] Explanation of symbols

[0611] 1 Substrate processing device

[0612] 11 Stacker

[0613] 13

[0614] 15 Carrier transport mechanism

[0615] 21 Loading unit

[0616] 22A, 22A1, 22A2, 22B, 22B1, 22B2 Carrier loading portion

[0617] 25 Loading and conveying section

[0618] 26 First transport mechanism of loading section

[0619] 27 Second transport mechanism of loading section

[0620] 31 Processing Blocks

[0621] 33 Tiers

[0622] 35 Transport Space

[0623] 36 Main transport mechanism

[0624] 41 Processing Department

[0625] 42 Liquid Handling Department

[0626] 43 Liquid Handling Unit

[0627] 47 Heat Treatment Department

[0628] 48 Heat treatment unit

[0629] 51 First loading section

[0630] 52 First conveying and placing section

[0631] 53 1st return loading section

[0632] 56 Second loading section

[0633] 57 Second transport placement unit

[0634] 58 Second return placement section

[0635] 61 Pump Room

[0636] 62 Pumps

[0637] 71 Interface

[0638] 73 Interface conveyor

[0639] 74 The first transport mechanism of the interface

[0640] 75 Second transport mechanism of the interface

[0641] 76 The third transport mechanism of the interface

[0642] 91 Cleaning Department

[0643] 101 Heat Treatment Department

[0644] 107 Control Department

[0645] C carrier

[0646] BARC anti-reflective film coating unit

[0647] RESIST Resist coating unit

[0648] SD developer unit

[0649] TC protective film coating unit

[0650] NTD Negative Tone Developing Unit

[0651] PTD positive tone developing unit

[0652] EXP Exposure Machine

[0653] W substrate

[0654] X front and back direction

[0655] Y width direction

[0656] Z Up and Down Direction

Claims

1. A substrate processing device comprising: Loading unit; A plurality of layers are arranged in an up-and-down direction; and A control unit, controlling the loading unit and the layer; The strata respectively have: A first mounting portion for mounting a substrate; a processing section for processing the substrate; and A main transport mechanism transports the substrate to the first loading portion and the processing portion; The loading unit comprises: A carrier loading portion for loading the carrier; and a conveying unit that conveys a substrate between the carrier placed on the carrier placing unit and the first placing unit; and The conveying section of the loading section includes a first conveying mechanism. The first conveying mechanism performs at least one of a supplying action and a retrieving action, wherein the supplying action is to convey a substrate from the carrier mounted on the carrier mounting portion to the first mounting portion, and the retrieving action is to convey a substrate from the first mounting portion to the carrier mounted on the carrier mounting portion; The first transport mechanism further performs an inter-layer transport operation to transport the substrate between the two first placement portions disposed at different layers; and The layer that the substrate passes through last among the layers is set as the final layer, The conveying section of the loading section conveys the substrate from the first mounting section of the final layer to the carrier mounted on the carrier mounting section; and The substrate processing device comprises: a carrier retreating portion for placing the carrier at a position retreated from the carrier placing portion; and a carrier conveying unit for conveying the carrier between the carrier placing unit and the carrier retreating unit; and The control unit detects a dispensing action of the main transport mechanism of the final layer to place a substrate on the first placement unit of the final layer, and determines a timing of an action of the carrier transport unit based on a detection result of the dispensing action of the main transport mechanism of the final layer.

2. The substrate processing apparatus according to claim 1, wherein One or more of the processing units in the layer perform a first process on the substrate, The processing units in one or more other layers perform a second process on the substrate that is different from the first process. The first transfer mechanism transfers a substrate between the first placement portion of the layer where the first process is performed and the first placement portion of the layer where the second process is performed.

3. The substrate processing apparatus according to claim 2, wherein The first process includes a first pre-exposure process performed before the exposure process, The second process includes a second pre-exposure process different from the first pre-exposure process and performed before the exposure process.

4. The substrate processing apparatus according to claim 2, wherein The first treatment comprises a first liquid treatment, The second treatment includes a second liquid treatment different from the first liquid treatment.

5. The substrate processing apparatus according to claim 2, wherein The first process includes an antireflection film forming process for forming an antireflection film on a substrate, a resist film forming process for forming a resist film on a substrate, a protective film forming process for forming a protective film for protecting the resist film on the substrate, a developing process for developing the substrate, and a part of a cleaning process for cleaning the substrate. The second process includes the antireflection film forming process, the resist film forming process, the protection film forming process, the development process, and another part of the cleaning process.

6. The substrate processing apparatus according to claim 2, wherein The first process includes forming an anti-reflection film on the substrate. The second process includes forming a resist film on the substrate. The first transfer mechanism transfers a substrate from the first placement portion of the layer where the first process is performed to the first placement portion of the layer where the second process is performed.

7. The substrate processing apparatus according to claim 2, wherein The first process includes a process of forming an antireflection film on the substrate and a process of forming a resist film on the substrate. The second process includes forming a protective film on the substrate to protect the resist film. The first transfer mechanism transfers a substrate from the first placement portion of the layer where the first process is performed to the first placement portion of the layer where the second process is performed.

8. The substrate processing apparatus according to claim 7, wherein The processing section of the layer performing the second processing further performs processing for developing the substrate, The transport unit of the loading unit transports a substrate from the first mounting unit of the layer where the second process is performed to the carrier mounted on the carrier mounting unit.

9. The substrate processing apparatus according to claim 2, wherein The transport unit of the loading unit transports a substrate from the carrier mounted on the carrier mounting unit to the first mounting unit of the level where the first process is performed.

10. The substrate processing apparatus according to claim 2, wherein The number of the layers for which the first processing is performed is 2 or more, The number of the layers for performing the second process is 2 or more.

11. The substrate processing apparatus according to claim 2, wherein the processing units in one or more layers different from the layer performing the first processing and the layer performing the second processing perform a third processing on the substrate, The third process includes developing the substrate. The transport unit of the loading unit transports a substrate from the first mounting unit of the layer where the third process is performed to the carrier mounted on the carrier mounting unit.

12. The substrate processing apparatus according to claim 11, wherein The number of the layers for performing the third process is 2 or more.

13. The substrate processing apparatus according to claim 1, wherein The strata have a second mounting portion for mounting a substrate, The substrate processing apparatus includes Interface Department, The interface part has a transport unit for transporting the substrate between the second loading unit and the exposure device, and The transfer section of the interface section does not transfer a substrate between the two second placement sections provided at different levels.

14. The substrate processing apparatus according to claim 1, wherein The first loading portion includes: A first transport placement section dedicated for placing a substrate on the transfer section of the loading section; and The first return placement portion is exclusively used for the main transfer mechanism to place the substrate thereon.

15. The substrate processing apparatus according to claim 14, wherein The conveying section of the loading section simultaneously places two substrates on the first transport placement section, and The first transport placement section is configured so that at least four substrates can be placed on the first transport placement section.

16. The substrate processing apparatus according to claim 14, wherein The conveying unit of the loading unit simultaneously obtains two substrates from the first return loading unit, and The first return placement portion is configured so that at least four substrates can be placed on the first return placement portion.

17. The substrate processing apparatus according to claim 1, wherein The first conveying mechanism performs one of the supplying operation and the collecting operation, and does not perform the other of the supplying operation and the collecting operation. The conveying section of the loading section includes a second conveying mechanism, The second transport mechanism does not perform one of the supply operation and the collection operation, but performs the other of the supply operation and the collection operation.

18. The substrate processing apparatus according to claim 17, wherein The second conveying mechanism of the loading section further performs the inter-layer conveying operation.

19. The substrate processing apparatus according to claim 1, wherein The control unit determines whether a predetermined substrate to be carried into the carrier mounted on the carrier retreating unit is mounted on the first mounting unit on the final level based on a detection result of the dispensing operation of the main transport mechanism on the final level. When the control unit determines that a predetermined substrate to be transported to the carrier loaded on the carrier retracting unit has been loaded on the first loading unit of the final layer, the control unit starts the operation of the carrier transporting unit to transport the carrier from the carrier retracting unit to the carrier loading unit.

20. A substrate processing method, comprising: A supply step of transferring the substrate from the carrier to at least one of the plurality of levels; a processing step of processing the substrate while transferring the substrate in the layer; An inter-layer transfer step of transferring the substrate between two different layers; and a recovery step of transferring the substrate from at least one of the layers to the carrier mounted on the carrier mounting portion; and At least one of the supplying step and the collecting step and the inter-layer transporting step are performed by the same transporting mechanism; and The layer that the substrate passes through last among the layers is set as the final layer, The substrate processing method The distribution action of the substrate of the final layer is detected, and based on the detection result of the distribution action of the final layer, the timing of transferring the carrier between the carrier loading section and the carrier retreating section for loading the carrier at a position retreated from the carrier loading section is determined.

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