Method for manufacturing light emitting device and light emitting device

Abstract

The present disclosure relates to a method for manufacturing a light-emitting device and a light-emitting device. The method for manufacturing a light-emitting device according to an embodiment of the present disclosure includes the following steps: forming a gallium nitride semiconductor layer on a first temporary substrate; forming an electrode portion on the semiconductor layer to manufacture a light-emitting element; forming a protective film on the light-emitting element; irradiating a laser to an interface between the first temporary substrate and the semiconductor layer; removing the protective film; and transferring the light-emitting element onto a substrate using a transfer device.

Description

[0001] This application is a divisional application of a patent application with an application date of December 5, 2018, application number 201811480431.7, and title “Display Device”. Technical Field

[0002] The invention relates to a manufacturing method of a light-emitting device and the light-emitting device. Background Art

[0003] Light-emitting elements are semiconductor elements that use light-emitting diodes as inorganic light sources, and are used in a variety of fields such as display devices, vehicle lamps, and general lighting. Light-emitting diodes have the advantages of long life, low power consumption, and fast response speed, and therefore have rapidly replaced conventional light sources.

[0004] In addition, conventional light emitting diodes are mainly used as backlight light sources in display devices, but recently, micro LEDs (Micro LEDs) used in display devices that directly display images using light emitting diodes are being developed.

[0005] Display devices generally use a mixture of blue, green, and red to display various colors. In order to display various images, the display device includes a plurality of pixels, each of which has blue, green, and red sub-pixels. The color of a specific pixel is determined by the colors of these sub-pixels, and an image is displayed by a combination of these pixels.

[0006] For a micro LED display, micro LEDs are arranged on a two-dimensional plane corresponding to each sub-pixel, and therefore, many micro LEDs need to be arranged on a substrate. However, the size of a micro LED is, for example, less than 200 microns, and further less than 100 microns, that is, very small, and various problems arise due to such a small size. In particular, it is difficult to sort small-sized light-emitting diodes, and therefore it is difficult to mount light-emitting diodes on a panel for a display. Summary of the invention

[0007] The present disclosure provides a method for manufacturing a display device capable of easily mounting a plurality of light-emitting elements formed on a growth substrate to a display panel substrate, and a display device manufactured by the method.

[0008] The present disclosure also provides a light emitting element transfer method capable of safely transferring a large number of light emitting elements to a display panel substrate.

[0009] A display device according to an embodiment of the present disclosure may include: a panel substrate; a plurality of light-emitting elements arranged on the panel substrate; and at least one connection end (tip) arranged on one side of each of the light-emitting elements, wherein the plurality of light-emitting elements may include: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, the active layer being sandwiched between the first conductive semiconductor layer and the second conductive semiconductor layer; and a first electrode pad and a second electrode pad arranged on the light-emitting structure.

[0010] According to another embodiment of the present disclosure, a method for transferring a light-emitting element may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a mask layer covering the plurality of light-emitting elements and having at least one hole on the upper portion of each light-emitting element; forming a connection layer on the mask layer connected to the light-emitting element through the at least one hole; combining a first temporary substrate on the upper portion of the connection layer; removing the substrate and the mask layer from the light-emitting element; combining a second temporary substrate on the lower portion of the light-emitting element; and separating the light-emitting element from the connection layer.

[0011] According to another embodiment of the present disclosure, a method for transferring a light-emitting element may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a first mask layer covering the plurality of light-emitting elements; combining a first temporary substrate on the first mask layer; removing the substrate from the light-emitting elements; forming a second mask layer, wherein the second mask layer is formed at the bottom of the first mask layer and is a mask layer having at least one hole at the bottom of each light-emitting element; forming a connecting layer connected to the light-emitting element through the at least one hole at the bottom of the second mask layer; combining a second temporary substrate at the bottom of the connecting layer; removing the first temporary substrate as well as the first mask layer and the second mask layer from the light-emitting elements; and separating the light-emitting elements from the connecting layer.

[0012] According to another embodiment of the present disclosure, a method for manufacturing a display device may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a mask layer covering the plurality of light-emitting elements and having at least one hole on the upper portion of each light-emitting element; forming a connection layer on the mask layer connected to the light-emitting element through the at least one hole; combining a first temporary substrate on the upper portion of the connection layer; removing the substrate and the mask layer from the light-emitting element; combining a second temporary substrate on the lower portion of the light-emitting element; separating the light-emitting element from the connection layer; and separating at least one light-emitting element among the plurality of light-emitting elements arranged on the second temporary substrate from the second temporary substrate.

[0013] According to another embodiment of the present disclosure, a method for manufacturing a display device may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a first mask layer covering the plurality of light-emitting elements; combining a first temporary substrate on the first mask layer; removing the substrate from the light-emitting elements; forming a second mask layer, wherein the second mask layer is formed at the bottom of the first mask layer and has at least one hole at the bottom of each light-emitting element; forming a connecting layer connected to the light-emitting element through the at least one hole in the second mask layer; combining a second temporary substrate at the bottom of the connecting layer; removing the first temporary substrate as well as the first mask layer and the second mask layer from the light-emitting elements; and separating at least one light-emitting element among the plurality of light-emitting elements arranged on the second temporary substrate from the connecting layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1A is a plan view of a light emitting apparatus according to an embodiment of the present invention; Figure 1B is along Figure 1A Cross-sectional view of line I-I'.

[0015] Figure 2 FIG. 1 is a cross-sectional view schematically showing a light emitting device according to an embodiment of the present invention.

[0016] Figure 3 1A is a cross-sectional view of a light emitting device according to an embodiment of the present invention, ie, a cross-sectional view corresponding to the line II' of FIG. 1A.

[0017] Figure 4 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0018] Figure 5 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0019] Figure 6 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0020] Figure 7 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0021] Fig. 8A and Figure 8B is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0022] Fig.9Ais a plan view of a light emitting apparatus including light emitting elements connected in parallel according to an embodiment of the present invention; Fig. 9B is along Fig.9A Cross-sectional view along line II-II'.

[0023] Fig.10 is a light emitting device according to an embodiment of the present invention, which shows a light emitting unit including light emitting elements connected in series.

[0024] Fig.11 The flowchart shows a method of transferring after manufacturing a light-emitting element in a method of manufacturing a light-emitting device according to an embodiment of the present invention.

[0025] FIG. 12A to FIG. 12N It is shown in order and specifically Fig.11 A cross-sectional view of a light-emitting element manufacturing and transfer method.

[0026] FIG. 13A to FIG. 13E 1 is a cross-sectional view showing a method for manufacturing and transferring a light emitting element according to another embodiment of the present invention.

[0027] FIG. 14A to FIG. 14M 1 and 2 are cross-sectional views sequentially illustrating a method for manufacturing a light emitting device according to an embodiment of the present invention.

[0028] FIG. 15A to FIG. 15E 1 is a schematic diagram sequentially showing a method of simultaneously transferring a plurality of light-emitting elements.

[0029] Fig.16 The diagram shows a state in which a plurality of pixel units are formed using a substrate of a sufficient size and then cut into display units of various sizes.

[0030] Fig.17 A diagram showing a state where display units cut into various sizes are assembled on a base substrate such as a PCB.

[0031] Fig.18 is a plan view showing a display device manufactured by the above method.

[0032] Fig.19 It is shown Fig.18 Enlarged plan view of the P3 section.

[0033] Fig. 20 is a structural diagram showing a display device according to an embodiment of the present invention.

[0034] Fig.21A FIG. 1 is a circuit diagram showing one pixel, which shows an example of a pixel constituting a passive display device. Fig.21B is a circuit diagram showing a first pixel, and shows an example of a pixel constituting an active display device.

[0035] Fig. 22 is a perspective view showing a large-area multi-module display device according to an embodiment of the present invention.

[0036] Fig.23 is a schematic plan view for explaining a display device according to still another embodiment.

[0037] Fig.24A and Fig. 24B 1 is a schematic plan view and a cross-sectional view for explaining a light emitting element of a display device according to still another embodiment.

[0038] Fig.24C It is a schematic cross-sectional view for explaining a modification example of the light emitting element.

[0039] FIG. 25A to FIG. 25K is a schematic cross-sectional view illustrating a method of manufacturing a display device according to still another embodiment.

[0040] FIG. 26A to FIG. 26L is a schematic cross-sectional view for explaining a method of manufacturing a display device according to still another embodiment.

[0041] FIG. 27A to FIG. 27K is a schematic cross-sectional view for explaining a method of manufacturing a display device according to still another embodiment.

[0042] FIG. 28A to FIG. 28O It is a plan view for explaining a modified example of the light emitting element.

[0043] Fig.29A FIG. 1 is a schematic plan view for explaining a light emitting element according to still another embodiment of the present invention.

[0044] Fig.29B is along Fig.29A Schematic cross-sectional view taken along the cutting line CC'.

[0045] Fig. 30A FIG. 1 is a schematic plan view for explaining a pixel region according to still another embodiment of the present invention.

[0046] Fig. 30B is along Fig. 30A A schematic cross-sectional view taken along the line D-D'. DETAILED DESCRIPTION

[0047] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The embodiments described below are provided as an example in order to fully convey the idea of ​​the present disclosure to those of ordinary skill in the technical field to which the present disclosure belongs. Therefore, the present disclosure is not limited to the embodiments described below, but may also be embodied in other forms. Moreover, in the accompanying drawings, the width, length, thickness, etc. of the constituent elements may be exaggerated for convenience. Furthermore, when it is recorded that a constituent element is "on the top" or "on" of another constituent element, it not only includes the situation where each part is located at the "immediate upper part" or "immediately above" of another part, but also includes the situation where another constituent element is sandwiched between each constituent element and another constituent element. Throughout the entire specification, the same figure numerals represent the same constituent element.

[0048] A display device according to an embodiment of the present disclosure includes: a panel substrate; a plurality of light-emitting elements arranged on the panel substrate; and at least one connection end (tip) arranged on one side of each of the light-emitting elements, wherein the plurality of light-emitting elements may include: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, the active layer being sandwiched between the first conductive semiconductor layer and the second conductive semiconductor layer; and a first electrode pad and a second electrode pad arranged on the light-emitting structure.

[0049] In one embodiment, the at least one connection end portion may be disposed on the light emitting structure and disposed between the first electrode pad and the second electrode pad.

[0050] The thickness of the at least one connection end portion may be smaller than the thickness of the first electrode pad and the second electrode pad. Therefore, the upper end of the connection end portion is located below the upper ends of the first electrode pad and the second electrode pad.

[0051] In one embodiment, the at least one connection end portion may be arranged on the reverse side of the light emitting structure, facing the first electrode pad and the second electrode pad.

[0052] The at least one connection end portion may be in contact with the first conductive type semiconductor layer.

[0053] Furthermore, a plurality of connection ends may be arranged on each of the light emitting elements, and the plurality of connection ends arranged on each of the light emitting elements may be arranged in an asymmetrical manner with respect to at least one arrangement direction of the light emitting elements arranged on the panel substrate.

[0054] Here, the at least one connection end portion may include three connection end portions arranged in a triangle form, and one of the three connection end portions may be arranged along a first column, and the remaining connection end portions may be arranged along other columns adjacent to the first column.

[0055] The at least one connection end may further include a connection end disposed at a center of the light emitting element, and the connection end disposed at the center may be located within a triangle formed by the three connection ends.

[0056] Furthermore, the connection end portion may have a right triangle shape. Also, the connection end portion disposed at the center of the light emitting element may be disposed in a direction different from that of the other connection end portions.

[0057] The thicknesses of the plurality of connection end portions may be different from each other.

[0058] In addition, an area ratio of the connection end portion to an area on a plane of the light emitting element may be 1.2% or less.

[0059] Furthermore, the first electrode pad may be electrically connected to the first conductive type semiconductor layer through a via hole formed in the second conductive type semiconductor layer and the active layer.

[0060] Furthermore, the light emitting element may further include an insulating layer covering a side surface of the first conductive type semiconductor layer and the second conductive type semiconductor layer.

[0061] Furthermore, the light emitting element may further include an ohmic layer disposed on the second conductive type semiconductor layer, and the insulating layer may cover the side surfaces of the first conductive type semiconductor layer and the ohmic layer.

[0062] In addition, the display device may further include: a bump electrically connected to the light-emitting element; a base substrate facing the bump to transmit light released from the light-emitting element; a step adjustment layer located between the bump and the light-emitting element and covering the light-emitting element; and an adhesive layer located between the base substrate and the light-emitting element so as to adhere the light-emitting element to the base substrate, wherein the step adjustment layer and the adhesive layer may cover the side surfaces of the light-emitting element.

[0063] Furthermore, the display device may further include a protection layer covering the side surfaces of the bump and the step adjusting layer.

[0064] In addition, the connection end portion may be buried in the adhesive layer.

[0065] The surface of the base substrate may have projections and depressions.

[0066] The display device may further include a light blocking layer disposed between the adhesive layer and the base substrate, the light blocking layer having a window transmitting light generated from the light emitting element, and a width of the window may be narrower than a width of the light emitting element.

[0067] According to another embodiment of the present disclosure, a method for transferring a light-emitting element may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a mask layer covering the plurality of light-emitting elements and having at least one hole on the upper portion of each light-emitting element; forming a connection layer on the mask layer connected to the light-emitting element through the at least one hole; combining a first temporary substrate on the upper portion of the connection layer; removing the substrate and the mask layer from the light-emitting element; combining a second temporary substrate on the lower portion of the light-emitting element; and separating the light-emitting element from the connection layer.

[0068] Furthermore, the light emitting element transfer method may further include the step of transferring at least one light emitting element among the plurality of light emitting elements arranged on the second temporary substrate to another substrate.

[0069] Here, the step of separating the light emitting element from the connection layer may be performed by applying an external force in an opposite direction of the first temporary substrate to one side of the second temporary substrate.

[0070] As the connection layer and the light emitting element are separated by an external force, a connection end portion which is a part of the connection layer may remain on the light emitting element.

[0071] Also, in the step of bonding the first temporary substrate, the first temporary substrate may be bonded on an upper portion of the connection layer so that the thin film portion is disposed between the connection layer and the first temporary substrate.

[0072] Furthermore, the method further includes the following steps: after the mask layer is removed, removing the first temporary substrate arranged on the upper part of the light emitting element from the thin film part, and the second temporary substrate can be combined with the lower part of the light emitting element after the first temporary substrate is removed.

[0073] According to another embodiment of the present disclosure, a method for transferring a light-emitting element may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a first mask layer covering the plurality of light-emitting elements; combining a first temporary substrate on the first mask layer; removing the substrate from the light-emitting elements; forming a second mask layer, wherein the second mask layer is formed at the bottom of the first mask layer and has at least one hole at the bottom of each light-emitting element; forming a connecting layer connected to the light-emitting element through the at least one hole at the bottom of the second mask layer; combining a second temporary substrate at the bottom of the connecting layer; removing the first temporary substrate as well as the first mask layer and the second mask layer from the light-emitting elements; and separating the light-emitting elements from the connecting layer.

[0074] When the light emitting element is separated from the connection layer, a portion of the connection layer may remain in the at least one light emitting element, thereby forming a connection end portion.

[0075] According to another embodiment of the present disclosure, a method for manufacturing a display device may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a mask layer covering the plurality of light-emitting elements and having at least one hole on the upper portion of each light-emitting element; forming a connection layer on the mask layer connected to the light-emitting element through the at least one hole; combining a first temporary substrate on the upper portion of the connection layer; removing the substrate and the mask layer from the light-emitting element; combining a second temporary substrate on the lower portion of the light-emitting element; separating the light-emitting element from the connection layer; and separating at least one light-emitting element among the plurality of light-emitting elements arranged on the second temporary substrate from the second temporary substrate.

[0076] The step of separating the light emitting element from the connection layer may be performed by applying an external force in a direction perpendicular to the first temporary substrate to one side of the second temporary substrate.

[0077] According to another embodiment of the present disclosure, a method for manufacturing a display device may include the following steps: forming a plurality of light-emitting elements arranged regularly on a substrate; forming a first mask layer covering the plurality of light-emitting elements; combining a first temporary substrate on the first mask layer; removing the substrate from the light-emitting elements; forming a second mask layer, wherein the second mask layer is formed at the bottom of the first mask layer and has at least one hole at the bottom of each light-emitting element; forming a connecting layer connected to the light-emitting element through the at least one hole in the second mask layer; combining a second temporary substrate at the bottom of the connecting layer; removing the first temporary substrate as well as the first mask layer and the second mask layer from the light-emitting elements; and separating at least one of the light-emitting elements arranged on the second temporary substrate from the connecting layer.

[0078] Here, when the light emitting element is separated from the connection layer, a part of the connection layer may remain in the light emitting element, thereby forming a connection end portion.

[0079] The present disclosure can be implemented in various changes and can have various forms. Here, specific embodiments are shown in the drawings and described in detail herein. However, this is not intended to limit the present disclosure to a specific disclosed form, which should be understood to include all changes, equivalents and substitutes within the scope of the concept and technology of the present disclosure.

[0080] The present disclosure relates to a light-emitting device including pixels. The light-emitting device represented in the present disclosure includes a display device and / or a lighting device including a light-emitting element. In the light-emitting device of the present disclosure, when the light-emitting element is used as a pixel for displaying an image, it can be used as a display device. Display devices include: televisions, tablet computers, e-book display devices, computer display screens, self-service machines, digital cameras, game consoles, portable phones, PDAs, large indoor / outdoor electro-optical panels, etc. The lighting device includes a backlight used in a display device, and indoor and outdoor lighting, road lighting, car lighting, etc. can be taken as examples.

[0081] The light-emitting device according to one embodiment of the present disclosure includes a micro-light-emitting element. The micro-light-emitting element may be an element having a width or length of about 1 micron to about 800 microns, about 1 micron to about 500 microns, or about 10 microns to about 300 microns. However, the micro-light-emitting element according to one embodiment of the present disclosure does not necessarily have a width or length within the above range, and may also have a smaller or larger size as required.

[0082] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0083] Figure 1A is a plan view of a light emitting device according to an embodiment of the present disclosure; Figure 1B is along Figure 1A Cross-sectional view of line I-I'.

[0084] Reference Figure 1A and Figure 1B According to an embodiment of the present disclosure, a light emitting device includes: a substrate 10 ; and a pixel unit 110 , which is provided on the substrate 10 and includes at least one pixel 111 .

[0085] The substrate 10 includes at least one pixel region 10d and a non-pixel region 10nd surrounding the pixel region 10d. The pixel region 10d corresponds to a region where a pixel 111 is provided and light emitted from a light-emitting element 150 described later is allowed to travel and be recognized by a user. The non-pixel region 10nd is a region other than the pixel region 10d. The non-pixel region 10nd is provided on at least one side of the pixel 111, and in one embodiment of the present disclosure, may be provided in a form surrounding the pixel region 10d.

[0086] The substrate 10 may be formed of a light-transmitting insulating material. Here, the “light-transmitting” of the substrate 10 includes not only the transparent state that allows all light to pass through, but also the semi-transparent or partially transparent state that allows only light of a predetermined wavelength or a portion of light of a predetermined wavelength to pass through.

[0087] Examples of the material of the substrate 10 include glass, quartz, organic polymers, organic and inorganic composite materials, etc. However, the material of the substrate 10 is not limited thereto, and is not particularly limited as long as it has light-transmitting properties and insulating properties.

[0088] The pixel units 110 are the smallest units representing images. Each pixel unit 110 can emit white light and / or colored light. Each pixel unit 110 can also include a pixel 111 that emits one color, and can also include a plurality of pixels 111 that are different from each other, so that different colors can be combined to emit white light and / or colored light. For example, each pixel unit 110 can include first to third pixels 111a, 111b, 111c.

[0089] The pixel 111 is provided in the pixel area 10d on the substrate 10. The pixel 111 may be provided one-to-one in one pixel area 10d, and according to an embodiment, may be provided one-to-many in one pixel area 10d. In other words, each pixel unit 110 may be provided with at least one pixel 111, for example, each pixel unit 110 may include first to third pixels 111a, 111b, 111c. The first to third pixels 111a, 111b, 111c are provided to the first pixel area 10a, 10b, 10c, respectively. The first to third pixels 111a, 111b, 111c may be implemented using the first to third light emitting elements 150a, 150b, 150c that emit wavelength bands different from each other. That is, assuming that the light emitted by the first to third pixels 111a, 111b, 111c is the first light to the third light, respectively, the first light to the third light may have wavelength bands different from each other. In one embodiment of the present disclosure, the first to third lights may correspond to blue, red, and green wavelength bands. However, the wavelength band of light emitted by the pixels 111 included in each pixel unit 110 is not limited thereto, and may also correspond to cyan, magenta, and yellow wavelength bands. Hereinafter, the case where each pixel unit 110 includes the first to third pixels 111a, 111b, and 111c that emit blue, red, and green light is described as an example.

[0090] The pixel 111 includes: a light-transmitting layer 120 provided on the substrate 10 ; a light-emitting element 150 provided on the light-transmitting layer 120 ; an insulating film 160 provided on the light-emitting element 150 ; and a terminal portion 170 provided on the insulating film 160 .

[0091] The light-transmitting layer 120 is a layer that allows light emitted from the light-emitting element 150 described later to pass therethrough, and is provided corresponding to the pixel region 10d. The light-transmitting layer 120 may be provided one-to-one corresponding to each pixel region 10d. For example, in the case of providing the first to third pixels 111a, 111b, 111c, the light-transmitting layer 120 is provided in the first to third pixel regions 10a, 10b, 10c where the first to third pixels 111a, 111b, 111c are provided, respectively. Figure 1A In the figure, the light-passing layer 120 is shown as being slightly smaller than the pixel region 10d, but for the purpose of convenience of explanation, the light-passing layer 120 and the pixel region 10d may correspond to each other, but their sizes may be different from the contents shown in the figure. For example, the area of ​​the light-passing layer 120 on the plane may be slightly smaller than, equal to, or larger than the area of ​​the pixel region 10d. However, the light-passing layers 120 provided to the adjacent pixel regions 10d are separated from each other and do not meet or contact each other.

[0092] The light-passing layer 120 is provided in a shape corresponding to the shape of the pixel region 10d when viewed in a plane. The light-passing layer 120 may be provided in a rectangular shape having an upper surface 120p and a side surface 120q when viewed in a cross section. Here, the upper surface 120p may be substantially parallel to the lower substrate 10 surface so that the light-emitting element 150 can be provided later.

[0093] The light reaching the light-transmitting layer 120 from the light-emitting element 150 is incident into the light-transmitting layer 120, and then emitted to the outside through the inside of the light-transmitting layer 120. Here, the light-transmitting layer 120 allows at least a portion of the light from the light-emitting element 150 (for example, at least a portion of the light amount and / or at least a portion of a specific wavelength) to pass therethrough.

[0094] The light passing through the light passing layer 120 may maintain the wavelength at the time of incident to the light passing layer 120 , or may be converted into another wavelength different from the wavelength at the time of incident to the light passing layer 120 .

[0095] In the case where the light passing through the light passing layer 120 maintains the same wavelength before and after passing through the light passing layer 120, the light passing layer 120 may function as a wave path. In the case where the light passing through the light passing layer 120 is converted into different wavelengths before and after passing through the light passing layer 120, the light passing layer 120 functions as a light conversion layer 120f. In the present embodiment, for the sake of convenience of description, the case where the light passing layer 120 functions as the light conversion layer 120f is referred to as a light conversion layer 120f and is represented by a separate reference numeral. However, it will be understood that, depending on the circumstances, the light conversion layer 120f is also described as an element included in the light passing layer 120.

[0096] As described above, the light conversion layer 120f absorbs the wavelength of light from the light emitting element 150, thereby emitting it as light of other wavelengths. The light conversion layer 120f particularly absorbs light of relatively short wavelengths and then emits light of a longer wavelength than the wavelength of the absorbed light. The light conversion layer 120f can be selectively used from materials that can absorb light of a predetermined wavelength and then convert it into light of other wavelengths and release it. For example, the light conversion layer 120f can be implemented using phosphors, nanostructures such as quantum dots, organic materials that can change color, or a combination thereof. For example, when a phosphor is used as a material for the light conversion layer 120f, the phosphor can emit red light after absorbing blue light. The phosphor can be provided in a state mixed with a transparent or translucent binder such as polydimethylsiloxane (PDMS), polyimide (PI), poly(2-methyl methacrylate) (PMMA, poly(methyl2-methylpropenoate)), ceramics, etc.

[0097] On the light conversion layer 120f, the light emitting element 150 is provided by placing an adhesive layer 180 in the middle. The adhesive layer 180 can be formed using a non-conductive material and includes a material having light transmittance. For example, an optically clear adhesive can be used for the adhesive layer 180. As long as the material constituting the adhesive layer 180 is optically transparent and can stably attach the light emitting element 150, its type is not limited. The adhesive layer 180 is provided to the pixel area 10d corresponding to the area where the light emitting element 150 is attached, and when viewed in a plane, it can be provided with an area corresponding to the area of ​​the light emitting element 150.

[0098] The light emitting elements 150 , for example, first to third light emitting elements 150 a , 150 b , and 150 c are provided on the respective light passing layers with the adhesive layer 180 interposed therebetween.

[0099] The light emitting element 150 may be provided to each pixel 111 , thereby providing light of multiple wavelengths.

[0100] In one embodiment of the present disclosure, the first to third lights may have wavelength bands of green, red and blue, respectively. At this time, the first to third light-emitting elements 150a, 150b, 150c can be implemented using blue light-emitting diodes, red light-emitting diodes and green light-emitting diodes. However, the first to third lights do not need to have blue, red and green bands, respectively, in order to reflect blue, red and green. Even if the first to third lights have the same wavelength band, the color of the final emitted light can be controlled when using a light conversion layer 120f that converts at least a portion of the first to third lights into light of other wavelength bands. The reason is that the light conversion layer 120f includes materials such as phosphors and quantum dots that convert light of a predetermined wavelength into light of other wavelengths. In other words, the first to third pixels 111a, 111b, 111c do not necessarily use green, red and blue light-emitting diodes in order to reflect green, red and / or blue, and light-emitting diodes other than the above colors can also be used. For example, in order to express red, a red light emitting diode may be used, but a blue or ultraviolet light emitting diode may also be used, and a light conversion layer 120f that absorbs blue light or ultraviolet light and then releases red light is used.

[0101] The light conversion layer 120f can be selectively used in materials that can absorb light of a predetermined wavelength and then convert it into light of other wavelengths for release. For example, the light conversion layer 120f can be implemented using a fluorescent substance, a nanostructure such as a quantum dot, an organic material that can change color, or a combination thereof. In the portion adjacent to the light conversion layer 120f, a color filter layer 130 can also be arranged in order to improve the purity of the color finally released.

[0102] In one embodiment of the present disclosure, the case where the first light emitting diode 150a is a green light emitting diode, the second light emitting element 150b is a red light emitting diode, and the third light emitting element 150c is a blue light emitting diode is taken as an example for description.

[0103] Here, the first to third light emitting elements 150a, 150b, and 150c are shown as having the same size, but the first to third light emitting elements 150a, 150b, and 150c may have the same size or different sizes.

[0104] In addition, although the first to third light-emitting elements 150a, 150b, 150c are shown in the drawings as respectively having the same height, the first to third light-emitting elements 150a, 150b, 150c may have the same height as each other, or may have different heights. In one embodiment of the present disclosure, at least one of the first to third light-emitting elements 150a, 150b, 150c may be provided at a height different from the other two. The heights of the first to third light-emitting elements 150a, 150b, 150c may be different according to the materials or light characteristics constituting the first to third light-emitting elements 150a, 150b, 150c. For example, the first light-emitting element 150a emitting green light may have a greater height than the third light-emitting element 150c emitting blue light. However, in this embodiment, even if the first to third light-emitting elements 150a, 150b, and 150c have different heights from each other, since the first to third light-emitting elements 150a, 150b, and 150c are manufactured by the manufacturing method and transfer method described later and transferred to the substrate, their heights are lower than those of the existing invention. That is, for the first to third light-emitting elements used in the existing light-emitting device, there are many cases where they are transferred to the light-emitting device in a state including the growth substrate, but for the first to third light-emitting elements used in the light-emitting device according to an embodiment of the present disclosure, since they are directly transferred after being separated from the growth substrate, the height of the light-emitting element is lower than that of the existing invention. For example, in an embodiment of the present disclosure, the distance from the upper surface of the substrate to the active layer can be about 5 microns to about 10 microns. In this case, the growth substrate is removed from each light-emitting element, so the height deviation between the light-emitting elements is not large. For example, in the blue and green light-emitting elements, the deviation of the distance from the upper surface of the substrate to the active layer can be about 1 micron to about 2 microns.

[0105] In one embodiment of the present disclosure, the first to third light-emitting elements 150a, 150b, 150c are provided in the form of being peeled off from an element substrate (e.g., a sapphire substrate) for growing a semiconductor layer. Accordingly, it is possible to achieve a thinning of the element thickness. In particular, for light-emitting elements emitting green and blue light, for example, the first light-emitting element and the third light-emitting element can be provided without a substrate, and the thickness of the light-emitting element can be about 15 microns or less. In the case of providing a sapphire substrate, the thickness of the light-emitting element can have a significantly larger value (e.g., 50 to 100 microns) than in the case where a sapphire substrate is not provided. Therefore, in one embodiment of the present disclosure, the thickness deviation between each light-emitting element according to the presence or absence of an element substrate is minimized, thereby preventing defects due to height deviations in other processes described later.

[0106] An insulating film 160 is provided on the light emitting element 150. The insulating film 160 is provided in both the pixel region 10d and the non-pixel region 10nd. In the region corresponding to the pixel region 10d, the insulating film 160 covers the upper surface of the light passing layer 120 and the light emitting element 150. In the region corresponding to the non-pixel region 10nd, the insulating film 160 fills the space between the pixel region 10d and the pixel region 10d, and may be in contact with the upper surface of the substrate 10. The insulating film 160 is provided between the light passing layers 120 provided for each pixel region 10d. Accordingly, the light passing layers 120 are separated from each other by the insulating film 160. Therefore, the upper surface and the side surface of the light passing layer 120 are covered by the insulating film 160.

[0107] The insulating film 160 is made of a non-conductive material. The insulating film 160 may be made of a material that allows light to be transmitted, or may be made of a non-transparent material that does not allow light to be transmitted. According to an embodiment, in the case where color mixing occurs between adjacent pixels 111, the insulating film 160 may be made of a non-light-transmitting material, and in the case where color mixing is required or there is no concern about color mixing, the insulating film 160 may be made of a light-transmitting material.

[0108] The light-transmitting material may be an organic polymer, and in particular, may be formed using epoxy resin, polysiloxane or photoresist. For example, as a polysiloxane material, polydimethylsiloxane (PDMS) may be cited. However, the material of the packaging film 150 is not limited thereto, and materials such as hydrogen silsesquioxane (HSSQ), methyl silsesquioxane (MSSQ), polyimide, divinyl siloxane (Divinyl Siloxane), bis-Benzocyclobutane (DVS-BCS), perfluorocyclobutane (PFCB), and polyarylene ether (PAE) may also be used.

[0109] The non-light-transmitting material may include a light-absorbing substance, and may substantially include a substance having a light transmittance of 10% or less. For example, the insulating film 160 may be provided in black, for example, may be formed by a black matrix material used in a display device or the like. In the present embodiment, the insulating film 160 may be formed in particular by a black photoresist, and may include carbon black. In the case where the insulating film 160 is formed by a black photoresist, patterning by photolithography is easily performed. However, the material of the insulating film 160 is not limited thereto, and it may also be formed by a variety of materials.

[0110] The insulating film 160 may be provided as a single layer, but may also be provided as a multilayer. In one embodiment of the present disclosure, the insulating film 160 may include a first insulating film 161 provided on the substrate 10 and a second insulating film 163 provided on the first insulating film 161. The first insulating film 161 may be provided on the substrate 10, and may be provided to the non-pixel region 10nd between the light-passing layers 120. The second insulating film 163 may be provided on the light-passing layer 120 and the light-emitting element 150, and the pixel region 10d and the non-pixel region 10nd may both be provided with the second insulating film 163. Here, the materials constituting the first insulating film 161 and the second insulating film 163 may be the same as each other, or may be different from each other.

[0111] A portion of the insulating film 160 is removed to provide a plurality of contact holes that expose at least a portion of the first and second electrodes 159 p and 159 q of the light emitting element 150 .

[0112] A terminal portion 170 connected to the light emitting element 150 is provided on the insulating film 160 .

[0113] The terminal portion 170 may include a common pad 171d for applying a common voltage to the light emitting element 150 and a data pad for applying an image signal, i.e., a data signal, to the light emitting element 150. The data pad includes first to third data pads 171a, 171b, and 171c for providing data signals to the first to third light emitting elements 150a, 150b, and 150c, respectively.

[0114] The terminal portion 170 is electrically connected to each light emitting element 150 through a contact hole CH formed on the insulating film 160. That is, in the first light emitting element, the common pad 171d and the first data pad 171a are connected through the contact hole CH. In the second light emitting element 150b, the common pad 171d and the second data pad 171b are connected through the contact hole CH. In the third light emitting element 150c, the common pad 171d and the third data pad 171c are connected through the contact hole CH.

[0115] As the first to third light emitting elements 150a, 150b, and 150c, various types of light emitting diodes may be used. Figure 2 FIG. 1 is a cross-sectional view briefly showing a light emitting element 150 according to an embodiment of the present disclosure, which shows a case where a lateral type light emitting diode is used. Figure 2 The light emitting diode 150 shown in the figure may be any one of the first to third light emitting elements 150a, 150b, and 150c. In the present embodiment, the first light emitting element 150a is taken as an example for description.

[0116] Reference Figure 2 The first light emitting element 150a includes a first semiconductor layer 153, an active layer 155, a second semiconductor layer 157, a first electrode 159p, a second electrode 159q, an insulating film 160, a common pad 171d, and a first data pad 171a.

[0117] In one embodiment, for the light emitting element 150 emitting green light, the first semiconductor layer 153, the active layer 155, and the second semiconductor layer 157 may include: indium gallium nitride (InGaN), gallium nitride (GaN), aluminum indium gallium nitride (AlInGaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), and aluminum gallium phosphide (AlGaP). In one embodiment, for the light emitting element 150 emitting red light, the first semiconductor layer 153, the active layer 155, and the second semiconductor layer 157 may include: aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP), and gallium phosphide (GaP). In one embodiment, for the light emitting element 150 emitting blue light, the first semiconductor layer 153 , the active layer 155 and the second semiconductor layer 157 may include gallium nitride (GaN), indium gallium nitride (InGaN), aluminum indium gallium nitride (AlInGaN) and zinc selenide (ZnSe).

[0118] Here, the first semiconductor layer and the second semiconductor layer may be doped with impurities of opposite types to each other, and may be an n-type semiconductor layer or a p-type semiconductor layer according to the type of the impurities. For example, the first semiconductor layer may be an n-type semiconductor layer, and the second semiconductor layer may be a p-type semiconductor layer. Conversely, the first semiconductor layer may be a p-type semiconductor layer, and the second semiconductor layer may be an n-type semiconductor layer. In the following description, the case where the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer is described as an example.

[0119] In the drawings, the first semiconductor layer 153 and the second semiconductor layer 157 are shown as single layers, but these layers can also be multiple layers and can include a superlattice layer. The active layer 155 can include a single quantum well structure or a multi-quantum well structure, and the composition ratio of the nitride-based semiconductor can be adjusted to emit the required wavelength. For example, the active layer 155 can release blue light or ultraviolet light.

[0120] A first electrode 159 p is disposed on the first semiconductor layer 153 where the active layer 155 and the second semiconductor layer 157 are not provided, and a second electrode 159 q is disposed on the second semiconductor layer 157 .

[0121] The first electrode 159p and / or the second electrode 159q may be formed of a single layer or multiple layers of metal. The material of the first electrode 159p and / or the second electrode 159q may include various metals such as Al, Ti, Cr, Ni, Au, Ag, Cr, Cu, and alloys thereof.

[0122] Here, a plurality of concave-convex portions for improving light emission efficiency may be provided on the back side of the first semiconductor layer 153 (i.e., the opposite side of the side on which the active layer 155 is provided). The concave-convex portions may be provided in various forms such as polygonal pyramids, hemispheres, and surfaces randomly arranged but having roughness. For example, the back side of the first semiconductor layer 153 may be textured by various etching processes. Alternatively, the sapphire substrate may be peeled off after the first semiconductor layer 153 is formed on a patterned sapphire substrate, thereby forming concave-convex portions of various forms on the first semiconductor layer 153.

[0123] An insulating film 160 is provided on the first and second electrodes 159p and 159q, and a common pad 171d and a first data pad 171a connected through the first electrode 159p and the contact hole CH are provided on the insulating film 160. In the present embodiment, it is shown that the common pad 171d is connected to the first electrode 159p, and the first data pad 171a is connected to the second electrode 159q, but the purpose is to facilitate the description, and the present invention is not limited thereto. For example, the first data pad 171a may be connected to the first electrode 159p, and the common pad 171d may be connected to the second electrode 159q.

[0124] The common pad 171d and / or the first data pad 171a may be formed of a single layer or multiple layers of metal. The common pad 171d and / or the first data pad 171a may be made of metals such as Al, Ti, Cr, Ni, Au, and alloys thereof.

[0125] In one embodiment of the present disclosure, the light emitting element 150 is simply described with reference to the accompanying drawings, but the light emitting element 150 may include layers having additional functions in addition to the above-mentioned layers. For example, various layers may be included, such as a reflective layer for reflecting light, an additional insulating layer for insulating specific components, and a solder prevention layer for preventing the diffusion of solder.

[0126] Furthermore, when forming a lateral light-emitting element, the mesa can be formed in various forms, and the positions or shapes of the first electrode and the second electrode or the first electrode and the second electrode can also be changed in various ways.

[0127] The light emitting device according to an embodiment of the present disclosure is turned on by applying a common voltage and a data signal to the light emitting element 150 , thereby emitting light, and the emitted light passes through the lower substrate 10 and travels toward the rear direction of the substrate 10 .

[0128] According to an embodiment of the present disclosure, a light-emitting device can sequentially form a plurality of pixels and terminal portions on a substrate, so that the light-emitting device can be manufactured without an independent printed circuit board. In the case of manufacturing a light-emitting device by mounting a light-emitting element on an independent printed circuit board, it is necessary to form a conducting electrode on the printed circuit board and / or to connect the wiring using wires, etc., but in an embodiment of the present disclosure, the above-mentioned process can be omitted. The manufacturing method of the display device according to the present disclosure will be described below.

[0129] The light emitting device according to the above-described embodiment can not only be easily manufactured but also have improved color purity and color reproducibility.

[0130] In the existing invention, when a light-emitting element is mounted on a substrate to form a pixel, a light-emitting element is mounted on a transparent insulating film on the substrate. In the case where the insulating film used on the substrate side is transparent, the transparent insulating film is used as a wave path, thereby having the problem of light being propagated from one pixel to another adjacent pixel. However, according to one embodiment of the present disclosure, an insulating film through which light cannot pass is provided to each pixel area 10d, so the insulating film is not used as a waveguide. In particular, the insulating film can be provided as a black color that absorbs light, thereby preventing the travel of light toward adjacent pixels. Accordingly, color mixing or light interference between adjacent pixels will be prevented, and the final color purity and color reproducibility will also be improved.

[0131] Furthermore, as the area indicated by black increases, the contrast with the light emitted from each light emitting element increases, thereby improving the characteristics as a display device.

[0132] In addition, according to an embodiment of the present disclosure, a color filter layer or a color filter portion may be additionally arranged in addition to the light conversion layer, and a higher level of purity and color reproducibility may be obtained. Light that is not completely converted in the light conversion layer or light traveling from adjacent pixels also has the effect of being blocked again by the color filter layer and the color filter portion.

[0133] According to an embodiment of the present disclosure, the light emitting device according to an embodiment of the present disclosure may have various configurations without departing from the concept of the present disclosure.

[0134] Figure 31A , which is a cross-sectional view of a light emitting device according to an embodiment of the present disclosure, i.e., a cross-sectional view corresponding to line II' of FIG1A. In the following embodiments, in order to avoid repeated description, the description is centered on the contents different from the above embodiments, and the parts not described refer to the above embodiments.

[0135] Reference Figure 3 In order to prevent color mixing between adjacent pixels 111, the insulating film 160 may be formed differently from the above-mentioned embodiment. The insulating film 160 according to an embodiment of the present disclosure may have a structure that blocks light to the maximum extent in order to prevent color mixing of light between adjacent pixels 111. To this end, the first insulating film 161 according to the present embodiment may include a first sub-insulating film 161p and a second sub-insulating film 161q that completely covers the first sub-insulating film 161p.

[0136] The first sub-insulating film 161p may be provided in direct contact with the substrate 10, and the side and upper surface of the first sub-insulating film 161p may be completely covered by the second sub-insulating film 161q. Alternatively, the first sub-insulating film 161p may be provided at the same height as the light-passing layer 120, in which case the upper surface of the first sub-insulating film 161p may be covered by the second insulating film 163.

[0137] The first sub-insulating film 161p may be provided as a white insulating film 160. The second sub-insulating film 161q may be provided as a black insulating film 160. By combining the white insulating film 160 and the black insulating film 160, most of the light in the wavelength band, especially, the visible light wavelength band, can be prevented from traveling toward other adjacent pixels 111.

[0138] Here, the first sub-insulating film 161p is an insulating material having a white color, for example, an organic polymer or an organic-inorganic composite material, etc. The second sub-insulating film 161q can be made of a non-light-transmitting material like the second insulating film 163 and can be formed of the same material as the second insulating film 163 .

[0139] The light emitting device according to an embodiment of the present disclosure may further include various additional components for improving light emitting efficiency.

[0140] Figure 4 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0141] Reference Figure 4In a light emitting device according to an embodiment of the present disclosure, a diffusion plate 190 is arranged on the back side of the substrate 10. The diffusion plate 190 can prevent the generation of dark spots and bright spots by diffusing the light emitted from each pixel 111. The size of the light emitting element 150 and the light emitting area of ​​the light emitting element 150 can be smaller than the pixel 111. In this case, dark spots or bright spots may occur due to the difference in brightness between the portion corresponding to the light emitting area and the portion not corresponding to the light emitting area. In the present embodiment, since the diffusion plate 190 is arranged on the back side of the substrate 10 where the light travels, appropriate dispersion of light within each pixel 111 can be achieved, and as a result, light can be uniformly emitted without dark spots or bright spots.

[0142] In one embodiment of the present disclosure, the diffusion plate 190 is described as an example, but it is obvious that various optical sheets for improving light efficiency can also be arranged on the back of the substrate 10. For example, a prism sheet for light linearity, or a filter for blocking light of a specific wavelength or for passing light of a specific wavelength, etc. can be further arranged on the back of the substrate 10. These optical sheets can be arranged in various orders according to the functions to be obtained.

[0143] The light emitting device according to an embodiment of the present disclosure may further include additional components for improving light emitting efficiency and blocking color mixing of light from adjacent pixels.

[0144] Figure 5 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0145] Reference Figure 5 In the light emitting device according to an embodiment of the present disclosure, a reflective layer 140 is provided on the side of the light passing layer 120. Specifically, the reflective layer 140 may be provided between the insulating film 160, especially the first insulating film 161, and the side of the light passing layer 120. Here, the reflective layer 140 may also be provided when the light passing layer 120 is used as the light conversion layer 120f.

[0146] The reflective layer 140 can be formed of a conductive or non-conductive material capable of reflecting light emitted from the light emitting element 150. Conductive materials include metals and metal alloys, and non-conductive materials include organic-inorganic composite materials and dielectric mirrors.

[0147] As for metals and metal alloys, metals with high reflectivity may be included, for example, silver, aluminum, copper, platinum, gold, and the like.

[0148] The organic-inorganic composite material can be provided in the form of a mixed inorganic filler with a small particle size and a polymer resin. As the inorganic filler, barium sulfate, calcium sulfate, magnesium sulfate, barium carbonate, calcium carbonate, magnesium chloride, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, titanium dioxide, aluminum oxide, silicon dioxide, talc, zeolite, etc. can be used, but it is not limited to this.

[0149] The dielectric mirror can be formed by laminating a plurality of insulating films having different refractive indices. The material constituting the dielectric layer is not particularly limited, and it can be composed of various organic and inorganic materials.

[0150] In one embodiment of the present disclosure, the material or structure constituting the reflective layer 140 can be selected according to the wavelength band of the light from the light emitting element 150 of the corresponding pixel 111. The reflectivity of a specific material or metal may be different depending on the wavelength, and therefore, for the material constituting the reflective layer 140, it is preferred to select a material with a higher reflectivity in the wavelength band of the light of the actual light emitting element 150. For example, in the case where the light emitting element 150 emits light in the ultraviolet wavelength band, aluminum or aluminum alloy with a higher reflectivity in the ultraviolet wavelength band can be selected as the material of the reflective layer 140, and the dielectric mirror can also improve the reflectivity in the ultraviolet wavelength band by controlling the material or the number of stacked layers.

[0151] In this embodiment, the case where the reflective layer 140 is provided between the first insulating film 161 and the side surface 120q of the light-transmitting layer 120 is described as an example, but the invention is not limited thereto. In other embodiments, the reflective layer 140 may also be provided between the upper surface 120p of the light-transmitting layer 120, that is, between the light-transmitting layer 120 and the second insulating film 163. However, when the reflective layer 140 is made of a conductive material such as metal, it is provided in an insulated state so as not to be electrically connected to the terminal portion 170 of the light-emitting element 150.

[0152] According to an embodiment of the present disclosure, light emitted from the light emitting element 150 travels through the corresponding light passing layer 120 by means of the reflective layer 140 and is prevented from traveling to the adjacent pixel 111 to the greatest extent possible. As a result, color mixing in which light from a specific pixel 111 mixes with light from an adjacent pixel 111 is prevented.

[0153] The light emitting device according to an embodiment of the present disclosure can realize colored light by using various light emitting elements having wavelengths different from those in the above-mentioned embodiments and corresponding light conversion layers.

[0154] Figure 6 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0155] Reference Figure 6In the light emitting device according to an embodiment of the present disclosure, the light emitting elements 150 may emit light in the ultraviolet wavelength band, and the light passing layer 120 may be provided as a light conversion layer 120f that converts ultraviolet rays into a specific color accordingly.

[0156] In this embodiment, the first light-emitting elements 150a, 150b, 150c provided to the first to third pixels 111a, 111b, 111c can all emit ultraviolet light, and a light conversion layer 120f is provided in each of the first to third pixels 111a, 111c. Accordingly, the light conversion layer 120f of the first pixel 111a may include a light conversion material that converts the ultraviolet light emitted from the first light-emitting element 150a into blue light; the light conversion layer 120f of the second pixel 111b may include a light conversion material that converts the ultraviolet light emitted from the second light-emitting element 150b into red light, and the light conversion layer 120f of the third pixel 111c may include a light conversion material that converts the ultraviolet light emitted from the third light-emitting element 150c into green light.

[0157] The light-converting material can be composed of nanostructures such as quantum dots, organic materials that can change color, or a combination thereof, and can be selected according to the color to be expressed.

[0158] In this embodiment, a color filter CF may be further provided between the substrate 10 and the light passing layer 120. The color filter CF may include: color filters B, R, G provided to the pixel area 10d corresponding to each pixel 111; and a black matrix BM provided corresponding to the non-pixel area 10nd. The color filters B, R, G may be provided corresponding to the color of each pixel 111, and may include a blue filter B, a red filter R, and a green filter G.

[0159] The color filters B, R, and G improve the color purity of the light converted from each light conversion layer 120, and also play a role in blocking the unconverted light in the light emitted from the light emitting element 150. In particular, when the light emitting element 150 emits ultraviolet rays, a part of the ultraviolet rays may not be converted into specific colors such as blue, red, and green, and the color filters may block the unconverted ultraviolet rays.

[0160] The light emitting device according to an embodiment of the present disclosure can be used with Figure 6 In the embodiment, a variety of light emitting elements with different wavelengths and corresponding light conversion layers are used to realize colored light.

[0161] Figure 7 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.

[0162] Reference Figure 7In the light-emitting device according to one embodiment of the present disclosure, the light-emitting elements 150 can emit light in the blue wavelength band, and the light-passing layer 120 can be provided in a part of the pixels 111 as a light conversion layer 120f that converts blue into a specific color corresponding to the light-emitting element 150.

[0163] In the present embodiment, the first to third light-emitting elements 150a, 150b, 150c provided to the first to third pixels 111a, 111b, 111c can all emit blue light, and accordingly, the first pixel 111a corresponding to the blue pixel 111 does not require light conversion, and is provided to transmit all the light from the light-emitting element 150 through the light-transmitting layer 120. The second pixel 111b and the third pixel 111c require color conversion, and thus a light conversion layer 120f is provided. That is, the light conversion layer 120f of the second pixel 111b may include a light conversion material that converts the blue light emitted from the second light-emitting element 150b into red light, and the light conversion layer 120f of the third pixel 111c may include a light conversion material that converts the blue light emitted from the third light-emitting element 150c into green light.

[0164] The light-converting material can be composed of fluorescent materials, nanostructures such as quantum dots, organic materials that can change color, or a combination thereof, and can be selected according to the color to be expressed.

[0165] In the present embodiment, similarly, a color filter CF may be provided between the substrate 10 and the light-passing layer 120. However, for the first pixel 111a, since blue light is emitted from the light-emitting element 150, an additional blue filter that blocks ultraviolet light is not necessarily required. Therefore, for the first pixel 111a, the blue filter may be omitted, and a transparent insulating film T may be provided. On the contrary, for the second pixel 111b and the third pixel 111c, there may still be blue light that is not completely converted in the light conversion layer 120f, so in order to block the blue light, a red filter R and a green filter G may be provided in the pixel area 10d, respectively.

[0166] In the above-mentioned embodiment, the case where at least one of the light-transmitting layers is a light conversion layer is described as an example. However, according to an embodiment of the present disclosure, it is possible to manufacture without a light conversion layer.

[0167] Fig. 8A and Figure 8B FIG. 1 is a cross-sectional view briefly showing a light emitting element according to an embodiment of the present disclosure. Fig. 8A and Figure 8B , there is shown a case where there is no light conversion layer and lateral and vertical light emitting elements are used.

[0168] Reference Fig. 8AThe first to third light emitting elements 150a, 150b, 150c can emit green, red, and blue light, respectively. To this end, the first to third light emitting elements 150a, 150b, 150c can be manufactured by selecting from semiconductor materials that emit green, red, and blue light, respectively.

[0169] For example, in one embodiment, the first light emitting element 150a is a semiconductor layer, which may include indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum indium gallium nitride (AlInGaN), aluminum gallium indium phosphide (AlGaInP) and aluminum gallium phosphide (AlGaP), and may particularly include aluminum indium gallium nitride (AlInGaN).

[0170] The second light emitting element 150b as a semiconductor layer may include aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP), and gallium phosphide (GaP), and in particular may include aluminum gallium indium phosphide (AlGaInP).

[0171] The third light emitting element as a semiconductor layer may include gallium nitride (GaN), indium gallium nitride (InGaN), aluminum indium gallium nitride (AlInGaN) and zinc selenide (ZnSe), and may particularly include aluminum indium gallium nitride (AlInGaN).

[0172] In this embodiment, the first to third light emitting elements 150a, 150b, and 150c respectively emit colored lights of specific wavelengths, and therefore do not require an independent light conversion layer, and can be manufactured by a relatively simple method.

[0173] Reference Figure 8B As the first to third light emitting elements 150a, 150b, and 150c, not only lateral light emitting elements but also vertical light emitting elements may be used. In one embodiment of the present disclosure, for example, a vertical light emitting element may be used in the second light emitting element 150b that emits red light. Here, the second light emitting element 150b may include a semiconductor layer that emits red light, for example, an aluminum gallium indium phosphide (AlGaInP) semiconductor layer.

[0174] In this embodiment, the first electrode and the second electrode of the second light emitting element 150b are provided to the upper surface and the lower surface side, respectively, and the first electrode and the second electrode can be electrically connected to the common pad 171d or the second data pad 171b through the contact hole. In an embodiment of the present disclosure, the vertical light emitting element occupies a smaller area than the lateral light emitting element when viewed on a plane, and therefore has the advantage of being able to be formed at a higher density.

[0175] As described above, according to an embodiment of the present disclosure, when manufacturing a light emitting element of a specific color, a form that can be easily manufactured can be selected between a vertical type and a lateral type according to a substrate or a material used.

[0176] In the above description, the case of using a lateral type or a vertical type light emitting element is described, but the light emitting element is not limited to the above types.

[0177] Other light emitting devices according to an embodiment of the present disclosure may be employed in various devices, for example, may be employed in a backlight unit used in a display device.

[0178] Fig.9A is a plan view showing a light emitting apparatus including light emitting elements connected in parallel according to an embodiment of the present invention; Fig. 9B is along Fig.9A Cross-sectional view along line II-II'. Fig.10 1 is a light emitting device according to an embodiment of the present disclosure, which shows a case where it includes a light emitting element 150 connected in series. In this embodiment, the light emitting device has a structure substantially similar to the pixel unit 110 in the above embodiment. For the sake of convenience, a light emitting unit provided with a light emitting element 150 is referred to as a pixel 111 similar to the above embodiment.

[0179] Referring to the above embodiments and Fig.9A and Fig. 9B The light-emitting device includes a substrate 10 and a pixel 111 mounted on the substrate 10. Each pixel 111 includes the substrate 10, a light-transmitting layer 120 provided on the substrate 10, a light-emitting element 150 provided on the light-transmitting layer 120, an insulating film 160 covering the light-emitting element 150 and the light-transmitting layer 120, and a terminal portion 170 provided on the insulating film 160.

[0180] In the present embodiment, the terminal portion 170 includes: a common pad 171p for applying a common voltage to one of the first electrode and the second electrode of the light emitting element 150; and a data pad 171q for applying a light emitting signal to the other of the first electrode and the second electrode. The common pad 171p and the data pad 171q may be provided in a form that is spaced apart from each other and extends in one direction. One of the first electrode and the second electrode of each light emitting element 150 may be connected to the common pad 171p through the contact hole CH, and the other may be connected to the data pad 171q through the contact hole CH. As a result, each light emitting element 150 is connected in parallel between the common pad 171p and the data pad 171q.

[0181] Fig.10 is a plan view showing a light emitting device including light emitting elements 150 connected in series according to an embodiment of the present invention. Fig.9A Except for this point and the difference in the connection relationship between the two ends of the common pad 171p and the data pad 171q providing the light emitting element 150, the Fig.9A There is not much difference in the situation, so the explanation is omitted.

[0182] The light emitting device having the above structure according to the above embodiment can be manufactured by preparing a substrate and sequentially forming various components on the substrate, and in particular, can be manufactured through the steps of preparing a light emitting element and transferring the light emitting element to the substrate.

[0183] Hereinafter, a method of transferring after manufacturing a light-emitting element will be described in order first, and then a method of manufacturing a light-emitting device will be described in order.

[0184] Fig.11 The flowchart shows a method of transferring after manufacturing a light emitting element in a method of manufacturing a light emitting device according to an embodiment of the present disclosure. The light emitting element manufactured in the following embodiment uses a GaN-based semiconductor and can be a blue light emitting element or a green light emitting element.

[0185] Reference Fig.11 According to an embodiment of the present disclosure, a method for manufacturing and transferring a light-emitting element includes the following steps: forming a GaN-based semiconductor layer on a temporary substrate (S10); forming an electrode portion, etc. on the semiconductor layer to manufacture a light-emitting element (S20); forming a protective film on the manufactured light-emitting element (S30); irradiating a laser at an interface between the temporary substrate and the semiconductor layer (S40); removing the protective film (S50), and then transferring the light-emitting element on the substrate using a transfer device (S60).

[0186] FIG. 12A to FIG. 12NIt is shown in order and specifically Fig.11 A cross-sectional view of a light-emitting element manufacturing and transfer method.

[0187] Reference Fig. 12A , an epitaxial stack is formed on the first temporary substrate 10p. The epitaxial stack can be formed using semiconductor layers including a first semiconductor layer 153, an active layer 155, and a second semiconductor layer 157. In one embodiment of the present disclosure, the first temporary substrate 10p can be a sapphire substrate. The semiconductor layers can be GaN-based semiconductor layers, for example, the first semiconductor layer 153 can be an n-type GaN semiconductor layer, the active layer 155 can be an AlInGaN semiconductor layer, and the second semiconductor layer 157 can be a p-type GaN semiconductor layer.

[0188] Reference Fig. 12B The epitaxial deposited portion on the first temporary substrate 10p is isolated in units of light emitting elements. A light emitting element unit is the smallest unit for manufacturing a light emitting element, and adjacent light emitting elements are physically isolated.

[0189] Reference Fig. 12C , a mesa structure is formed in the epitaxial accumulation portion corresponding to each light emitting element. That is, the epitaxial accumulation portion has a mesa structure that protrudes toward the upper side in a part of the region and is recessed toward the lower side in another part of the region. To this end, a part of the first semiconductor layer 153, the active layer 155, and the second semiconductor layer 157 in each layer of the epitaxial accumulation portion is removed, thereby exposing the first semiconductor layer 153 toward the upper direction. In one embodiment of the present disclosure, a part of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer is removed, thereby exposing the n-type semiconductor layer toward the upper direction.

[0190] Reference Fig.12D The epitaxial accumulation part manufactured on the first temporary substrate 10p is formed with an electrode part, thereby manufacturing a light-emitting element. The electrode part includes a first electrode 159p connected to the first semiconductor layer 153 and a second electrode 159q connected to the second semiconductor layer 157. The first electrode 159p is formed on the first semiconductor layer 153 where the active layer 155 and the second semiconductor layer 157 are not provided, and the second electrode 159q is formed on the second semiconductor layer 157. The first electrode 159p and / or the second electrode 159q can be formed using a single layer or multiple layers of metal.

[0191] Reference Fig.12EA protective film 165 is formed on the light emitting element 150 manufactured on the first temporary substrate 10p. The protective film 165 is used to temporarily protect the light emitting element during the process. It can be made of a material that can completely cover the light emitting element 150 and can be easily removed. The material of the protective film 165 is not particularly limited, for example, it can be made of organic / inorganic polymers. In one embodiment of the present disclosure, it can be made of epoxy resin, polysiloxane or photoresist. For example, as a polysiloxane material, polydimethylsiloxane (PDMS) can be listed. However, the material of the protective film 165 is not limited to this, and materials such as hydrogen silsesquioxane (HSSQ), methyl silsesquioxane (MSSQ), polyimide, divinyl siloxane (Divinyl Siloxane), dibenzocyclobutane (DVS-BCS, bis-Benzocyclobutane), octafluorocyclobutane (PFCB, Perfluorocyclobutane), and polyarylene ether (PAE, Polyarylene Ether) may also be used.

[0192] Reference Fig.12F , a second temporary substrate 10q is provided with a separation layer 10q' interposed on the protective film 165. The second temporary substrate 10q is a support substrate that supports the respective light emitting elements 150 and the protective film 165 at the upper portion. The separation layer 10q' allows the second temporary substrate 10q and the protective film 165 to be bonded together, and is used to easily separate the second temporary substrate 10q later.

[0193] In one embodiment of the present disclosure, the second temporary substrate 10q may be a sapphire substrate, and the separation layer 10q' may include a metal oxide such as ITO. However, the second temporary substrate 10q and the separation layer 10q' are not limited thereto, and may be formed using a variety of materials as long as they can fully support the protective film 165 and the light-emitting element 150 in the protective film 165 and can be easily removed.

[0194] In this embodiment, the laser LSR is irradiated to the interface between the light emitting element 150 and the first temporary substrate 10p while the light emitting element 150 and the protective film 165 are supported by the second temporary substrate 10q. Specifically, the laser LSR is irradiated to the interface between the first semiconductor layer 153 of the light emitting element 150 and the first temporary substrate 10p.

[0195] The laser LSR is used to thermally decompose the molecules arranged at the interface between the first semiconductor layer 153 and the first temporary substrate 10p. In one embodiment of the present disclosure, the first semiconductor layer 153 includes GaN, and GaN is thermally decomposed by the irradiation of the laser LSR, resulting in the nitrogen atoms being converted into nitrogen (N2) and removed. Accordingly, N in GaN between the first semiconductor layer 153 and the first temporary substrate 10p is removed, thereby forming an auxiliary layer 151 composed of Ga. Here, since Ga still exists between the first semiconductor layer 153 and the substrate, the light-emitting element continues to be attached to the substrate through the adhesive force of Ga. However, after the irradiation of the laser LSR, the adhesive force between the first semiconductor layer 153 and the first substrate 10p is significantly weakened compared to the adhesive force between the first semiconductor layer 153 and the first substrate 10p before the irradiation of the laser LSR.

[0196] The second temporary substrate 10q prevents the light emitting element 150 and the protective film 165 from warping when the laser LSR is irradiated between the first semiconductor layer 153 and the first temporary substrate 10p. Due to the heat and gas that may be generated when the laser LSR is irradiated, the light emitting element 150 and / or the protective film 165 at a portion adjacent to the light emitting element 150 may warp, but the second temporary substrate 10q is supported by pressing from the upper part to the lower part, thereby minimizing the above-mentioned warping.

[0197] Reference Figure 12G The laser LSR is irradiated between the second temporary substrate 10 q and the protective film 165 , specifically, to the separation layer 10 q ′ provided between the second temporary substrate 10 q and the protective film 165 .

[0198] Reference Fig.12H If the laser LSR is irradiated to the separation layer 10q', the adhesive force between the second temporary substrate 10q and the protective film 165 is weakened, and accordingly, the second temporary substrate 10q can be easily removed.

[0199] Reference Fig.12I , the protective film 165 is removed. The protective film 165 can be easily removed by wet etching or dry etching. Accordingly, the light emitting element 150 is finally formed on the first temporary substrate 10p, and an auxiliary layer 151 with weak adhesion is formed between the first temporary substrate 10p and the first semiconductor layer 153 of the light emitting element 150.

[0200] Reference Fig.12J A transfer device 190 is arranged on the light emitting element 150 to be transferred. A temporary adhesive layer 181 is provided on the surface of the transfer device 190 facing the light emitting element 150. The temporary adhesive layer 181 is provided only to the position corresponding to the light emitting element 150 to be transferred, and its position can be determined in consideration of the position to be finally transferred.

[0201] Reference Figure 12K The temporary adhesive layer 181 of the transfer device 190 is brought into contact with the light emitting element 150 to be transferred, thereby bonding the light emitting element 150 to the temporary adhesive layer 181 .

[0202] Reference Figure 12L , the transfer device 190 is moved while the light emitting element 150 is temporarily bonded to the bonding layer 181, so that the transfer device 190 is separated from the first temporary substrate 10p. By moving the transfer device 190, the light emitting element 150 attached to the temporary bonding layer 181 is separated from the first temporary substrate 10p. Here, the bonding force of the selected temporary bonding layer 181 is greater than the bonding force caused by the auxiliary layer 151 composed of Ga. Here, the bonding force of the auxiliary layer 151 composed of Ga is in a state of being greatly weakened, so if the temporary bonding layer 181 is used, the light emitting element 150 can be easily separated from the first temporary substrate 10p.

[0203] Reference Figure 12M Finally, a substrate on which the light emitting element 150 is to be mounted is prepared, and an adhesive layer 180 for bonding the light emitting element 150 is provided on the substrate. In this figure, for the sake of convenience of explanation, some components are omitted, and the case where no other components are sandwiched between the substrate 10 and the adhesive layer 180 is illustrated as an example. However, various other components of the display device, such as a light passing layer, a light conversion layer, a reflection layer, etc., may be sandwiched between the actual substrate 10 and the adhesive layer 180.

[0204] Here, the light emitting element 150 attached to the transfer device 190 is attached after being arranged on the substrate formed with the adhesive layer 180. At this time, the attachment area between the light emitting element 150 and the adhesive layer 180 may be larger than the attachment area between the light emitting element 150 and the temporary adhesive layer 181 on the transfer device 190.

[0205] Reference Fig.12N , after the light emitting element 150 is attached to the adhesive layer 180, the transfer device 190 is separated from the first light emitting element 150. Here, even if the temporary adhesive layer 181 on the transfer device 190 and the adhesive layer 180 on the substrate 10 have substantially the same adhesive force, in the case where the adhesive area between the substrate 10 and the adhesive layer 180 is larger than the adhesive area between the transfer device 190 and the temporary adhesive layer 181, the adhesive layer 180 has a stronger adhesive force, and thus the transfer device 190 (specifically, the temporary adhesive layer 181 on the transfer device 190) will be easily separated from the light emitting element 150.

[0206] As described above, according to one embodiment of the present disclosure, a light-emitting element formed on an independent substrate can be easily transferred to a desired substrate. Specifically, according to one embodiment of the present disclosure, the light-emitting element can be directly transferred from the growth substrate to the substrate on which the element is to be formed immediately after the epitaxial accumulation portion is formed on a growth substrate such as a sapphire substrate. Furthermore, after the arranged light-emitting elements are formed on a growth substrate such as a sapphire substrate, only the light-emitting elements corresponding to the required portions are selectively arranged on the substrate using a transfer device accurately, thereby reducing defects caused by incorrect arrangement of the light-emitting elements in the device to be manufactured. In addition, since the transfer can be performed directly without an additional process, no polishing or breaking process is required in the process. Therefore, the process becomes simple, and the yield can be increased, and the cost can be reduced.

[0207] In addition, although not shown in the figure, for a light-emitting element that does not use a GaN-based semiconductor, for example, a red light-emitting element, it can be manufactured and transferred to a substrate by various methods other than the above-mentioned method. According to one embodiment of the present disclosure, a method for transferring a red light-emitting element after manufacturing it on a GaAs-based semiconductor substrate can be performed as follows: a sacrificial layer is formed on a GaAs-based substrate, and an AlGaInP-based semiconductor layer is formed on the sacrificial layer, and then an electrode portion is formed on the semiconductor layer to manufacture a red light-emitting element, and then the sacrificial layer is removed and the red light-emitting element is transferred to a substrate using a transfer device.

[0208] In one embodiment of the present disclosure, the FIG. 12A to FIG. 12N In another embodiment of the present disclosure, the substrate can be used in another way to manufacture and transfer light-emitting elements of other forms. For example, by using a patterned substrate with predetermined concave-convex portions, a light-emitting element with concave-convex portions formed at the bottom can be manufactured and transferred to the substrate.

[0209] FIG. 13A to FIG. 13E is a cross-sectional view showing a method for manufacturing and transferring a light emitting element according to another embodiment of the present disclosure, and only major steps are shown for the convenience of explanation. FIG. 13A to FIG. 13E In the embodiment shown in FIG. 1 , except that a patterned substrate, such as a patterned sapphire substrate (PSS), is used as the first temporary substrate 10p, the present invention is similar to the embodiment shown in FIG. FIG. 12A to FIG. 12N Therefore, the following description will focus on the differences from the above-mentioned embodiment.

[0210] Reference Fig.13AA patterned first temporary substrate 10p is provided as the first temporary substrate 10p, and an epitaxial accumulation portion including a first semiconductor layer 153, an active layer 155, and a second semiconductor layer 157 is formed on the patterned first temporary substrate 10p.

[0211] The patterned first temporary substrate 10p has concavoconvex portions PR, and the concavoconvex portions PR are arranged in polygonal cones, hemispheres, random forms, and can be provided in various forms such as a surface with roughness. Fig.13A In the description, for convenience of explanation, a case where the upper surface of the first temporary substrate 10p has a protrusion having a semicircular cross section is described as an example.

[0212] Reference Fig. 13B The light emitting element 150 is formed on the first temporary substrate 10p by separation of the epitaxial deposited portion, etching, formation of the electrode portion, and the like.

[0213] Reference Fig. 13C The laser LSR is irradiated to the interface between the first semiconductor layer 153 of the light emitting element 150 and the first temporary substrate 10p, thereby forming the auxiliary layer 151. At this time, the auxiliary layer 151 is formed along the interface of the first temporary substrate 10p, and thus is formed into a shape substantially the same as the shape of the concavo-convex portion PR.

[0214] Reference Fig.13D , the light emitting element 150 is separated from the first temporary substrate 10p by using the transfer device 190. At this time, the lower surface of the light emitting element 150 has a shape corresponding to the upper surface of the first temporary substrate 10p. That is, the lower surface of the light emitting element 150 has a reverse image shape of the concavo-convex portion PR on the upper surface of the first temporary substrate 10p, and accordingly, the concavo-convex portion PR is also formed on the lower surface of the light emitting element 150.

[0215] Reference Fig.13E The light emitting element 150 having the concavo-convex portion PR on the lower surface is bonded to the substrate 10 with the bonding layer 180 interposed therebetween.

[0216] As described above, when the light emitting element forms a concave-convex portion, the light emission efficiency is improved. The intensity of the light emitted by the light emitting element may vary, and this intensity difference may cause a difference in visibility. Accordingly, according to an embodiment of the present disclosure, a concave-convex portion may be selectively formed on the light emitting element according to the light emission efficiency.

[0217] In addition, in the embodiments of the present disclosure, there may be some structural differences between the light emitting devices according to the above embodiments, but they can be manufactured in substantially the same manner. Figures 11 to 13E The light emitting element manufacturing and transfer method is shown in FIG. Figure 1A and Figure 1B In the following embodiments, Fig.11 The light-emitting element manufacturing and transfer method disclosed in FIG. 13E can be adopted to the following steps: after forming the light-passing layer (and / or light conversion layer), the color filter layer, etc. on the substrate, the light-emitting element is transferred to the substrate on which the light-passing layer (and / or light conversion layer), the color filter layer, etc. are formed, and therefore, the light-passing layer, the color filter portion, etc. are formed on the substrate. The steps are described together. In addition, in the following embodiments, for the convenience of description, some components are omitted and some components are illustrated, and the unexplained parts refer to the above embodiments and drawings.

[0218] FIG. 14A to FIG. 14M 1 is a cross-sectional view sequentially illustrating a method for manufacturing a light emitting device according to an embodiment of the present disclosure.

[0219] Reference Fig.14A First, the substrate 10 is prepared, and the first insulating film 161 is formed on the substrate 10. The first insulating film 161 can be provided by various methods, for example, it can be easily patterned by photolithography after coating.

[0220] Reference Fig. 14B , a photoresist is coated on the substrate 10 formed with the first insulating film 161, and then exposed and developed to form a first photoresist pattern PR1. Here, the region where the photoresist is removed is the region where the light conversion layer 120f is to be formed, and in this embodiment, this region corresponds to the second pixel region.

[0221] Reference Fig. 14C , a color filter layer 130 is selectively formed in the second pixel region where the first photoresist pattern PR1 is not formed. The color filter layer 130 can be formed by spin coating, screen printing, etc. The color filter layer 130 can be formed on the front surface of the substrate 10 on which the first photoresist pattern is formed, or can be formed by patterning after being formed on the front surface. In the case where the color filter layer 130 is formed on the front surface, it can also be removed by grinding or the like described later, so patterning is not required.

[0222] In the drawings according to the present embodiment, although the formation of a reflective layer is not shown, a reflective layer may be additionally formed before the color filter layer 130 is formed on the substrate 10 formed with the first insulating film 161. The reflective layer may be formed, for example, by patterning by photolithography after forming a metal film or a dielectric mirror layer.

[0223] Reference Fig.14DThe light conversion layer 120f is formed in the second pixel region where the first photoresist pattern PR1 is not formed. The light conversion layer 120f may be provided to the second pixel region in a fluid form by coating or dripping and then cured.

[0224] Reference Fig.14E The first photoresist pattern PR1 is removed except for the region where the light conversion layer 120f is formed. After the first photoresist pattern PR1 is removed, the upper surface of the substrate 10 corresponding to the first pixel region and the third pixel region is exposed.

[0225] Reference Fig.14F A light-transmitting layer 120 is formed on the front surface of the substrate 10 including the first pixel region and the third pixel region. Here, the light-transmitting layer 120 is a layer other than the light conversion layer 120f, and can be formed to a sufficient thickness to cover the entire light conversion layer 120f.

[0226] Reference Figure 14G The upper surface of the light-passing layer 120 including the light-converting layer 120f formed to a sufficient height may be polished, whereby the height of the first insulating film 161 and the light-passing layer (including the light-converting layer 120f) 120 is flattened. The upper surface of the light-passing layer 120 may be flattened by chemical or physical polishing. Fig.14H An adhesive layer 180 is formed on the light-passing layer 120 of the planarized substrate 10. The adhesive layer 180 may be provided in an amount and height that enables the light-emitting element 150 to be well attached later, and may be provided with an organic polymer having fluidity, etc., and cured after the light-emitting element 150 is attached.

[0227] Reference Fig.14I , the light emitting element 150 is attached to the substrate 10 provided with the adhesive layer 180. Each light emitting element 150 can be manufactured on the substrate 10 and transferred to the substrate 10 by a transfer device.

[0228] Reference Fig.14J , a second insulating film 163 is formed on the substrate 10 to which the light emitting element 150 is attached. The second insulating film 163 covers the light passing layer 120, the first insulating film 161, and the first to third light emitting elements 150a, 150b, and 150c, and can be provided by various methods. The second insulating film is provided with a contact hole CH for exposing the electrodes of the first to third light emitting elements 150a, 150b, and 150c, and the second insulating film 163 having the contact hole CH can be easily manufactured by photolithography after being coated.

[0229] Figures 14K to 14MThe case where the terminal portion 170 is formed on the second insulating film 163 is shown, and the case where a lift-off method is used is shown as an example.

[0230] First, if Figure 14K As shown, a second photoresist pattern PR2 is formed on the second insulating film 163. The second photoresist pattern PR2 is formed by coating a photoresist and performing exposure and development. Here, the region where the photoresist is removed corresponds to the region where the terminal portion 170 is to be formed.

[0231] Then, if Figure 14L As shown, a conductive film ML is formed on the front surface of the substrate 10 formed with the second photoresist pattern PR2. The conductive film ML is formed using a material forming the terminal portion 170 and may be a single layer or multiple layers of metal and / or alloy.

[0232] Afterwards, if Fig.14M As shown, the second photoresist pattern is removed together with the metal film on the upper surface thereof, thereby forming the terminal portion 170 on the second insulating film 163 .

[0233] In the above manner, the light-emitting device according to an embodiment of the present disclosure can be easily manufactured. In particular, a plurality of pixels and terminal portions can be sequentially formed on a substrate using conventional processes, such as coating, screen printing, photolithography, etc., so there is no need to perform a process of separately manufacturing pixel units and then mounting them on an independent substrate formed with terminal portions and wiring, etc.

[0234] In the prior art, the light-emitting device is completed in the following manner: the light-emitting element chip is independently manufactured, and the PCB substrate with the terminal part and wiring etc. is independently manufactured, and then the light-emitting element chip is attached using conductive solder paste etc. In this case, in order to form the terminal part and wiring on the PCB substrate, it is necessary to drill through holes that penetrate the upper and lower parts of the PCB substrate on the PCB substrate. Moreover, in order to make electrical connections through each through hole, it is necessary to perform complex steps such as forming additional electrodes and connecting wiring. In addition, it is necessary to additionally ensure the area for forming the through hole on the printed circuit board, so it is difficult to achieve the miniaturization of pixels. For the area for forming the through hole, its area can be reduced by reducing the diameter of the through hole, but in this case, the problem of difficulty in processing will occur due to the reduction in the diameter of the through hole, so the processing difficulty and cost will increase sharply.

[0235] In contrast, the light-emitting device according to one embodiment of the present disclosure forms contact holes on an insulating film without an independent printed circuit board, and simply connects the terminal parts through the contact holes, thereby not only achieving miniaturization of pixels but also enabling simple manufacturing of the light-emitting device at low cost.

[0236] Here, although the above-mentioned drawings are shown with one pixel unit as the reference, a large substrate can be used to form a plurality of pixel units on the substrate at the same time, and then can be separated into independent display units of various sizes by cutting. Here, the display unit refers to a unit in the form of one or more pixel units mounted on a substrate. The separated independent display units are assembled again on a base substrate mounted with wiring or driving circuits, such as a PCB, so that light-emitting devices or display devices of various sizes can be manufactured.

[0237] According to an embodiment of the present disclosure, a method for manufacturing the display device includes a method for stably and efficiently transferring a plurality of light-emitting elements simultaneously. FIG. 15A to FIG. 15D Schematic diagram showing a method of transferring a plurality of light-emitting elements simultaneously in sequence. In the following embodiment, the following case is described as an example: red, green and blue light are embodied, but in order to embodied red light, a blue light-emitting diode is used as a light-emitting element instead of a red light-emitting diode, and a light conversion layer is used. Accordingly, in this embodiment, a blue light-emitting element, a green light-emitting element and a blue light-emitting element are provided for a red pixel, a green pixel and a blue pixel, respectively.

[0238] Reference Fig.15A , a plurality of blue light emitting elements 150B are formed on the first temporary substrate 10 p , and a plurality of green light emitting elements 150G are formed on an independent first temporary substrate 10 p .

[0239] The blue light emitting element 150B and the green light emitting element 150G formed on the independent first temporary substrate 10p are transferred to the third temporary substrate 10r using the transfer device 190. The third temporary substrate 10r can be a substrate with heat resistance, flexibility and / or viscosity, and can be provided in a sheet form. The third temporary substrate 10r is a temporary substrate for temporarily arranging the light emitting elements before transferring the blue light emitting element 150B or the green light emitting element 150G to the final substrate.

[0240] On the third temporary substrate 10 r , the light emitting elements 150 to be finally mounted are arranged in a manner corresponding to a plurality of pixels.

[0241] For the light emitting element 150 on the third temporary substrate 10 r , an additional process, such as a process of forming an electrode portion, etc., may be performed.

[0242] Reference Fig. 15B, prepare a substrate 10 on which the light emitting element 150 is finally formed. An adhesive layer 180 is provided at a position on the substrate 10 corresponding to the light emitting element 150. Here, the adhesive layer 180 may include an organic or inorganic polymer, or may be a solder. In an embodiment of the present disclosure, the solder of the adhesive layer 180 may be formed using a eutectic material.

[0243] The third temporary substrate 10 r on which the plurality of light emitting elements 150 are arranged is turned over after being held by the transfer device 190 , so that the light emitting elements 150 are placed in the middle to face the substrate 10 .

[0244] Reference Fig. 15C , the third temporary substrate 10r is pressurized in the downward direction, thereby the light emitting element 150 is bonded to the bonding layer 180. At this time, in the case where the bonding layer is formed of a eutectic material, it can be pressurized above the eutectic temperature, and eutectic welding can be performed by reflow soldering. The third temporary substrate 10r can be flexible, so that the light emitting element 150 can be effectively pressurized and bonded from the upper part to the lower part, thereby preventing the position of the light emitting element from being disengaged or tilted bonding, etc.

[0245] Reference Fig.15D After the light emitting element 150 is completely bonded to the bonding layer 180 on the substrate 10, for example, after the light emitting element 150 is completely bonded by eutectic solder or the like, the third temporary substrate 10r is removed, so that Fig.15E As shown, the light emitting elements 150 are finally transferred onto the substrate 10 in large quantities.

[0246] According to the above-described embodiment, it is possible to manufacture a display device which can minimize defects such as a plurality of light emitting elements being dislocated or a light emitting element being adhered to an adhesive layer at an angle.

[0247] Fig.16 The figure shows a state where a plurality of pixel units 110 are formed using a substrate 10 of sufficient size and then cut into display units 101 of various sizes. Fig.17 The diagram shows a state where display units 101 cut into various sizes are assembled and mounted on a base substrate such as a PCB.

[0248] Reference Fig.16 , a plurality of pixel units 110 are formed on the substrate 10 according to the above embodiment, and then can be cut along the cutting line CL into display units 101 of various sizes. The display unit 101 can have various sizes including 2, 6 or 6 pixel units 110, etc., so that only one pixel unit 110 can be cut.

[0249] Reference Fig.17The display units 101 cut in various sizes are assembled in appropriate combinations, so that display devices of various sizes can be manufactured. Here, the display device refers to an electronic device for displaying any visual information, such as text, video, photo, two-dimensional or three-dimensional image, etc. The display device manufactured by the above method is described below.

[0250] Fig.18 is a plan view showing a display device manufactured by the above method. Fig.19 It is enlarged to show Fig.18 Enlarged plan view of the P3 section.

[0251] Reference Fig.18 and Fig.19 According to an embodiment of the present disclosure, the display device can be provided in various shapes, that is, it can be provided in various shapes such as a closed polygon including straight lines, such as a rectangle, a circle or an ellipse including a side composed of curved lines, a semicircle or a semiellipse including a side composed of straight lines and curved lines. In an embodiment of the present disclosure, a case where the display device is provided in a rectangular shape is shown.

[0252] The display device may have a plurality of display units 101 assembled including a plurality of pixel units 110 for displaying an image. In an embodiment of the present disclosure, each pixel unit 110 may include a green pixel, a red pixel, and a blue pixel, and the first to third pixels 111a, 111b, 111c may correspond to the green pixel, the red pixel, and the blue pixel. However, the pixels that each pixel unit can include are not limited thereto. For example, each pixel unit may include a cyan pixel, a magenta pixel, a yellow pixel, etc.

[0253] The pixel units 110 and / or pixels 111a, 111b, 111c are arranged in rows and columns. Here, the meaning of the pixel units 110 and / or pixels 111a, 111b, 111c being arranged in rows and columns not only includes the situation that the pixel units 110 and / or pixels 111a, 111b, 111c are accurately arranged in a row or column, although they are arranged in rows or columns as a whole, they can also be arranged in a zigzag shape, etc., and their specific positions may change.

[0254] Fig. 20 is a structural diagram showing a display device according to an embodiment of the present disclosure.

[0255] Reference Fig. 20 According to an embodiment of the present disclosure, the display device includes a timing control unit 350, a scan driving unit 310, a data driving unit 330, a wiring unit, and a pixel unit. Here, when the pixel unit includes a plurality of pixels, each pixel is independently connected to the scan driving unit 310, the data driving unit 330, etc. through the wiring unit.

[0256] The timing control unit 350 receives various control signals and image data required for driving the display device from the outside (for example, a system that transmits image data). The image control unit 350 rearranges the received image data and transmits it to the data driving unit 330. In addition, the timing control unit 350 generates a scan control signal and a data control signal required for driving the scan driving unit 310 and the data driving unit 33, and transmits the generated scan control signal and data control signal to the scan driving unit 310 and the data driving unit 330, respectively.

[0257] The scan driving unit 310 receives a scan control signal from the timing control unit 350 and generates a scan signal in response thereto.

[0258] The data driving section 330 receives the data control signal and the image data from the timing control section 350 , and generates a data signal corresponding thereto.

[0259] The wiring section includes a plurality of signal wirings. The wiring section specifically includes a first wiring 103 connecting the scan driver 310 and the pixel and a second wiring 102 connecting the data driver 330 and the pixel. In one embodiment of the present disclosure, the first wiring 103 may be a scan wiring, and the second wiring 102 may be a data wiring. In the following, the first wiring is described as a scan wiring, and the second wiring is described as a data wiring. In addition, the wiring section also includes wiring that connects the timing control section 350 and the scan driver 310, the timing control section 350 and the data driver, or other components and transmits corresponding signals.

[0260] The scan wiring 103 supplies the scan signal generated from the scan driving section 310 to the pixel. The data signal generated from the scan driving section 330 is output to the data wiring 102. The data signal output to the data wiring 102 is input to the pixel of the selected horizontal pixel unit line by the scan signal.

[0261] The pixels 111a, 111b, and 111c are connected to the scan wiring 103 and the data wiring 102. When the scan signal is supplied from the scan wiring 103, the pixels 111a, 111b, and 111c selectively emit light in a manner corresponding to the data signal input from the data wiring 102. As an example, during each frame period, each pixel 111a, 111b, and 111c emits light at a brightness corresponding to the received data signal. The pixels 111a, 111b, and 111c that receive the data signal corresponding to the black brightness do not emit light during the corresponding frame period, thereby displaying black.

[0262] In an embodiment of the present disclosure, the pixels 111a, 111b, 111c may be driven in a passive manner or an active manner. When the display device is driven in an active manner, the display device may be driven by receiving first and second pixel power sources in addition to the scan signal and the data signal.

[0263] Fig.21A 1 is a circuit diagram showing a pixel, that is, a circuit diagram showing an example of a pixel constituting a passive display device. Here, the pixel can be one of a plurality of pixels, for example, it can be one of a red pixel, a green pixel, and a blue pixel. In this embodiment, it is represented as a first pixel 111a.

[0264] Reference Fig.21A , the first pixel 111a includes a light emitting element 150 connected between the scan wiring 103 and the data wiring 102. The light emitting element 150 may be a light emitting diode having a first electrode and a second electrode. The first electrode and the second electrode are respectively connected to a common pad and a data pad in the light emitting device. Here, the common pad may be connected to the scan wiring 103, and the data pad may be connected to the data wiring 102, or may be connected inversely thereto.

[0265] When a voltage greater than a threshold voltage is applied between the first electrode and the second electrode, the light emitting element 150 emits light at a brightness corresponding to the magnitude of the applied voltage. That is, by adjusting the voltage of the scan signal applied through the scan wiring 103 and / or the data signal applied through the data wiring 102, the light emission of the first pixel 111a can be controlled.

[0266] In one embodiment of the present disclosure, a case where only one light emitting element 150 is connected between the scan wiring 103 and the data wiring 102 is shown, but the present invention is not limited thereto. A plurality of light emitting elements 150 may be connected between the scan wiring 103 and the data wiring 102, and in this case, the light emitting elements 150 may be connected in series or in parallel.

[0267] Fig.21B 1 is a circuit diagram showing a first pixel 111a, that is, a circuit diagram showing an example of a pixel constituting an active type display device. When the display device is an active type, in addition to the scan signal and the data signal, the first pixel 111a can also be driven by supplying a first pixel power ELVDD and a second pixel power ELVSS.

[0268] Reference Fig.21B The first pixel 111 a includes one or more light emitting elements 150 and a transistor unit TFT connected thereto.

[0269] The first electrode of the light emitting element 150 may be connected to the first pixel power source ELVDD via the transistor section TFT, and the second electrode may be connected to the second pixel power source ELVSS. The first pixel power source ELVDD and the second pixel power source ELVSS may have different potentials from each other. As an example, the second pixel power source ELVSS may have a potential that is lower than the threshold voltage of the light emitting element relative to the potential of the first pixel power source ELVDD. Such light emitting elements emit light at brightness corresponding to the driving current controlled by the transistor section TFT.

[0270] According to an embodiment of the present disclosure, the transistor unit TFT includes a first transistor T1, a second transistor T2 and a storage capacitor Cst. However, the structure of the transistor unit TFT is not limited to that shown in FIG. Figure 4 Embodiment of the invention.

[0271] The source of the first transistor (switching transistor) T1 is connected to the data wiring 102, and the drain is connected to the first node N1. In addition, the gate of the first transistor is connected to the scan wiring 103. This first transistor is turned on when a scan signal of a voltage that can turn on the first transistor T1 is supplied from the scan wiring 103, so that the data wiring 102 and the first node N1 can be electrically connected. At this time, the data signal of the corresponding frame is supplied through the data wiring 102, and accordingly, the data signal is transmitted to the first node N1. The data signal transmitted to the first node N1 is charged to the storage capacitor Cst.

[0272] The source of the second transistor (driving transistor) T2 is connected to the first pixel power source ELVDD, and the drain is connected to the first electrode of the light emitting element. In addition, the gate of the second transistor T2 is connected to the first node N1. The second transistor T2 as described above controls the amount of driving current supplied to the light emitting element corresponding to the voltage of the first node N1.

[0273] The storage capacitor Cst has one electrode connected to the first pixel power source ELVDD and the other electrode connected to the first node N1. The storage capacitor Cst as described above charges a voltage corresponding to the data signal supplied to the first node N1 and maintains the charged voltage until a data signal of the next frame is supplied.

[0274] For convenience, Fig.21BA transistor unit TFT including two transistors is shown in the figure. However, the present disclosure is not limited thereto, and the structure of the transistor unit TFT can be implemented in various modified forms. For example, the transistor unit can also include more transistors or capacitors, etc. Moreover, in this embodiment, the specific structure of the first transistor, the second transistor, the storage capacitor, and the wiring are not shown in the figure, but the first transistor, the second transistor, the storage capacitor, and the wiring can be provided in various forms within the limit of implementing the circuit according to the embodiment of the present disclosure.

[0275] According to one embodiment of the present disclosure, a large-area display device can be realized by using the display device according to the above embodiment itself, but the display device according to the above embodiment can also be used as a display module and multiple display modules can be assembled to realize a display device with a larger area than the existing invention. Fig. 22 is a perspective view showing a large-area multi-module display device according to an embodiment of the present disclosure.

[0276] Reference Fig. 22 The multi-module display device 1000 may include a plurality of display modules DM. Fig.18 In the embodiment, 4×4 display modules DM constitute a multi-module display device. Here, the display module DM may have at least one structure in the above-mentioned embodiment. For example, each display module DM may be as shown in the following example. Fig.18 The display module DM of the first column and the first row includes a display portion 100 and a base substrate 200 as shown, and may be formed using a plurality of display units 101 having different areas from each other.

[0277] In this embodiment, the multiple display modules DM can be driven independently or at least partially, or at least partially driven in conjunction with other display modules DM. When the multiple display modules DM are driven in conjunction, a graph can be displayed as shown in the figure.

[0278] In this embodiment, a case where multiple display modules DM are provided in the same size is shown, but the present disclosure is not limited thereto, and it is obvious that at least one display module may also be provided in a size different from other display modules DM. Furthermore, at least one display module DM may have a different number of pixels from other display modules DM, and the resolutions based thereon may also have different values ​​from each other. In addition, when the resolutions of all regions do not need to be the same, a multi-module display device may be manufactured by arranging display modules DM with different resolutions from each other.

[0279] Fig.23 24A and 24B are schematic plan views for explaining a display device according to still another embodiment. Fig. 24B Schematic plan view and cross-sectional view for explaining a light emitting element used in a display device according to still another embodiment.

[0280] Reference Fig.23 , the display device 2000 includes a panel substrate 210 and a plurality of light emitting elements 800 .

[0281] The panel substrate 210 may include a circuit for passive matrix driving or active matrix driving. In one embodiment, the panel substrate 210 may include wiring and resistors inside, and in another embodiment, the panel substrate 210 may include wiring, transistors, and capacitors. The panel substrate 210 may have a pad on its upper surface that can be electrically connected to the arranged circuit. The present disclosure describes the situation where the panel substrate 210 includes a circuit, but the panel substrate 210 may also be a transparent substrate that can allow light to pass through.

[0282] A plurality of light emitting elements 800 are arranged on the panel substrate 210 . Each light emitting element 800 may constitute one sub-pixel SP. The light emitting element 800 may have a first electrode pad 112 and a second electrode pad 114 , and the first electrode pad 112 and the second electrode pad 114 may be electrically connected to the panel substrate 210 .

[0283] In the present disclosure, the light emitting element 800 may include a blue light emitting element 802, a green light emitting element 804, and a red light emitting element 806. The blue light emitting element 802 may be an inorganic light emitting diode that emits blue light, and may include a well layer of the AlGaInN series. The green light emitting element 804 may be an inorganic light emitting diode that emits green light, and may include a well layer of the AlGaInP series or a well layer of the AlInGaN series. The red light emitting element 806 may be an inorganic light emitting diode that emits red light, and may include a well layer of the AlGaInP series. Furthermore, the light emitting element 800 is not limited to the light emitting elements 102, 104, 106 that emit monochromatic light, and one light emitting element 800 may have a plurality of well layers of a structure stacked in a manner capable of emitting light of multiple colors such as blue, green, and red.

[0284] In the present disclosure, the blue light emitting element 802, the green light emitting element 804 and the red light emitting element 806 are arranged in different sub-pixels SP, and more than one sub-pixel SP can be arranged. Three sub-pixels respectively arranged with the blue light emitting element 802, the green light emitting element 804 and the red light emitting element 806 can form a pixel P.

[0285] For a specific example of the light emitting element 800, reference will be made to FIG. 24A to FIG. 24BFIG24A is a schematic plan view for illustrating a light emitting element 800 according to an embodiment of the present disclosure. Fig. 24B is along Fig.24A Here, for the sake of convenience, the first electrode pad 112 and the second electrode pad 114 are arranged on the upper side, but the light emitting element 800 can be flip-bonded (flip bonding) on Fig.23 In this case, the first electrode pad 112 and the second electrode pad 114 may be arranged on the lower side.

[0286] Reference Fig.24A and Fig. 24B The light emitting element 800 may include the light emitting structure 29 , the ohmic layer 33 , the insulating layer 31 , the first electrode pad 112 and the second electrode pad 114 , and the connection end portion 55 b may be disposed on the light emitting element 800 .

[0287] The light emitting structure 29 includes a first conductive type semiconductor layer 23, an active layer 25, and a second conductive type semiconductor layer 27. The active layer 25 may be disposed on the first conductive type semiconductor layer 23, and the second conductive type semiconductor layer may be disposed on the active layer 25.

[0288] The active layer 25 may include a multi-quantum well layer. Depending on the composition of the active layer 25, the wavelength of light emitted by the light emitting element 800 may be different, and accordingly, the light emitting element 802, the green light emitting element 804, or the red light emitting element 806 may be obtained.

[0289] Furthermore, the first conductive semiconductor layer 23 may be an n-type semiconductor layer, and the second conductive semiconductor layer 27 may be a p-type semiconductor layer. In the present disclosure, a mesa M may be formed on the upper portion of the first conductive semiconductor layer 23. The mesa M may be formed by etching the active layer 25 and the second conductive semiconductor layer 27, and may include a portion of the first conductive semiconductor layer 23.

[0290] The ohmic layer 33 may be arranged on the second conductive semiconductor layer 27. The ohmic layer 33 is in ohmic contact with the second conductive semiconductor layer 27. The ohmic layer 33 may include a reflective layer, and the reflective layer may reflect the light generated from the active layer 25, thereby preventing the light from being absorbed and lost by the first and second electrode pads 112, 114 or the substrate. For example, the ohmic layer 33 may include an ohmic contact layer and a reflective layer. However, the present disclosure is not limited thereto, and the ohmic layer 33 may also be formed using a transparent metal layer or a transparent conductive oxide layer.

[0291] The insulating layer 31 covers the ohmic layer 33 and the mesa M, and can also cover a portion of the upper surface and the side surface of the first conductive semiconductor layer 23. As described later, the insulating layer 31 can also cover the side surface of the through hole formed to electrically connect the first electrode pad 112 to the first conductive semiconductor layer 23. The insulating layer 31 can be formed using a single layer or multiple layers of a silicon oxide layer or a silicon nitride layer. Furthermore, the insulating layer 31 can also be formed using a distributed Bragg reflector.

[0292] The first electrode pad 112 is electrically connected to the first conductive type semiconductor layer 23. Fig. 24B As shown, the first electrode pad 112 is arranged on the upper part of the insulating layer 31, and is electrically connected to the first conductive semiconductor layer 23 through a through hole that penetrates the second conductive semiconductor layer 27 and the active layer 25. As shown in the figure, the first electrode pad 112 can also be directly connected to the first conductive semiconductor layer 23. The insulating layer 31 covers the side of the through hole, thereby preventing a short circuit between the first electrode pad 112 and the second conductive semiconductor layer 27 or the active layer 25.

[0293] The second electrode pad 114 is electrically connected to the second conductive semiconductor layer 27. The second electrode pad 114 is arranged on the upper portion of the insulating layer 31 and can be electrically connected to the ohmic layer 33 through an opening formed in the insulating layer 31. In the present disclosure, the ohmic layer 33 is formed using a conductive substance. And the second electrode pad 114 is electrically connected to the second conductive semiconductor layer 27.

[0294] There are more than one connection end 44b arranged on the upper part of the insulating layer 31, and can be arranged between the first and second electrode pads 112 and 114. The connection end 55b can be formed in the process of transferring the light-emitting element 800 to the panel substrate 210. The upper surface of the connection end 55b can be roughly an irregular inclined surface, and can have a concave-convex structure rather than a flat surface. In addition, the multiple connection ends 55b arranged on a light-emitting element 800 can also have different lengths from each other. In the present disclosure, the connection end 55b may include organic substances such as polydimethylpolysiloxane (PDMS), epoxy resin, acrylic resin (acryl), color polyimide (color polyimide), etc. However, the present disclosure is not limited to this, and the connection end 55b may also include other non-organic substances.

[0295] In the present disclosure, a plurality of connection ends 55b may be arranged on the light emitting element 800, and these plurality of connection ends 55b may be arranged asymmetrically with respect to a specific direction, for example, Fig.24AAs shown, three connection ends 55b can be arranged on the light emitting element 800, and the three connection ends 55b can be arranged asymmetrically relative to the straight line BB'. One connection end 55b is arranged on the left side of the straight line BB', and the other two connection ends 55b are arranged on the right side of the straight line BB'.

[0296] Fig.24C It is a schematic cross-sectional view for explaining a modification example of the light emitting element.

[0297] Reference Fig.24C The light emitting element 800' according to this embodiment is substantially similar to the light emitting element 800 described above, but differs in that the ohmic layer 33 is omitted. When describing the present disclosure, the same contents as those described in another embodiment will be omitted to avoid repetition.

[0298] With the omission of the ohmic layer 33, as shown in the figure, the second electrode pad 114 can be directly electrically connected to the second conductive semiconductor layer 27. Since the light emitting element 800' has a relatively small size, the omission of the ohmic layer 33 can also make the current spread evenly over a wider area of ​​the light emitting element 800'.

[0299] In addition, in the previous embodiment, the case where the connection end portion 55b is formed on the same side of the surface where the first electrode pad 112 and the second electrode pad 114 are arranged is illustrated and described, but the connection end portion 55b can also be formed on the reverse side of the light emitting element 800 facing the first electrode pad 112 and the second electrode pad 114. The formation of the connection end portion 55b at the lower portion is related to the transfer method of the light emitting element 800, which can be understood by the transfer method of the light emitting element 800 described later.

[0300] FIG. 25A to FIG. 25K is a schematic cross-sectional view illustrating a method for manufacturing a display device according to still another embodiment.

[0301] Reference Fig.25A , a light emitting element 800 is formed on a substrate 51. The substrate 51 may be a substrate for growing the light emitting element 800. The substrate may be, for example, a sapphire substrate for growing an AlInGaN series semiconductor layer or a GaAs substrate for growing a GaN substrate or an AlInGaP series semiconductor layer. For example, when the light emitting element 800 is a blue light emitting element 802 or a green light emitting element 804, a sapphire substrate or a GaN substrate may be used, and when the light emitting element 800 is a red light emitting element 806, a GaAs substrate may be used.

[0302] Reference Fig.25BA first mask layer 53 is formed on the substrate 51 to cover the plurality of light emitting elements 800. The first mask layer 53 is formed to completely cover the plurality of light emitting elements 800 and may be formed to have a predetermined thickness on the upper surface of the light emitting element 800.

[0303] Reference Fig.25C , a plurality of holes H are formed in the first mask layer 53. The plurality of holes H may be formed on the upper portions of the plurality of light emitting elements 800, respectively, and at least one hole H may be formed on each light emitting element 800. In the present disclosure, three holes H are formed on each light emitting element 800, and the three holes H may be arranged asymmetrically with respect to at least one direction in which the light emitting elements 800 are arranged. Here, the three holes H are arranged asymmetrically with respect to a direction perpendicular to the direction in which the light emitting elements 800 are arranged in the drawings.

[0304] The first mask layer 53 can be formed using a photosensitive material, and a plurality of holes H can be formed by a photolithography process. The plurality of holes H can be formed by an exposure and development process, but is not necessarily limited thereto, and an etching process can be used. The plurality of holes H can be formed into a triangular shape as shown in the figure. However, the plurality of holes H is not necessarily limited to three.

[0305] Reference Fig.25D , a connection layer 55 is formed on the first mask layer 53. The connection layer 55 is formed on the first mask layer 53 by filling the plurality of holes formed in the first mask layer 53. Since at least one hole H is formed on the upper portion of each light emitting element 800, the connection layer 55 can be connected to the light emitting element 800 through the at least one hole H formed on the upper portion of the light emitting element 800. During the formation of the connection layer 55, the connection portion 55a connected to the light emitting element 800 by filling the hole H is formed together.

[0306] The connection layer 55 can be formed by organic materials such as polydimethylpolysiloxane (PDMS), epoxy, acryl, color polyimide, etc. However, it is not limited thereto. Here, the light transmittance of the connection layer 55 can be more than 90%, and the refractive index can be 1.4 to 1.7.

[0307] Reference Fig.25E, a first temporary substrate 57 is combined on the upper part of the connection layer 55. The first temporary substrate 57 can be a polymer substrate such as PET, PEN, PI sheet, and can also be a substrate such as glass (Glass), PC, PMMA, etc. If the first temporary substrate 57 is combined on the upper part of the connection layer 55, bubbles that may be formed in the connection layer 55 are removed under a vacuum state, and the curing process of the connection layer 55 can be performed at a temperature lower than the melting point of the first mask layer 53. In this process, the first temporary substrate 57 can be combined with the connection layer 55.

[0308] When the first temporary substrate 57 is bonded to the connection layer 55, as shown in FIG. Fig.25F As shown, the substrate 51 is removed from the light emitting element 800. The substrate 51 can be removed by a laser lift-off process or a wet etching process. For example, when the substrate 51 is a sapphire substrate, the substrate 51 can be removed by a laser lift-off process or a chemical lift-off process, and when the substrate 51 is a GaAs substrate, the GaAs substrate can be removed by a wet etching process.

[0309] Reference Figure 25G , in a state where the substrate 51 is removed, the first mask layer 53 is removed from the light emitting element 800. The first mask layer 53 can be removed by using acetone, a dedicated stripper, etching, etc. With the first mask layer 53 removed, as shown in the figure, the light emitting element 800 can be connected to the connection layer 55 through at least one connection portion 55a and maintained.

[0310] As described above, after removing the first mask layer 53 from the light emitting element 800, referring to Fig.25H The second temporary substrate 59 is combined at the lower part of the light emitting element 800. The second temporary substrate 59 can be rubber or UV sheet, or can also be a polymer substrate such as PET, PEN, PI sheet, or can also be a substrate such as glass, PC, PMMA, etc.

[0311] When the second temporary substrate 59 and the light emitting element 800 are combined, Fig.25I As shown, the light emitting element 800 is separated from the connection layer 55 by using the second temporary substrate. By applying an external force in the opposite direction of the first temporary substrate 57, i.e., downward, to the second temporary substrate 59 to which the light emitting element 800 is bonded, at least one connection portion 55a connected to each light emitting element 800 is cut off, and the light emitting element 800 is separated from the connection layer 55.

[0312] As shown in the figure, the external force applied to the second temporary substrate 59 can be applied in a direction perpendicular to the connection layer 55 on one side of the second temporary substrate 59. Therefore, each light emitting element 800 can be separated from the connection layer 55 in a manner that at least one connection portion 55a connected to each light emitting element 800 is sequentially cut off from one side of the second temporary substrate 59.

[0313] Reference Fig.25J , the light emitting elements 800 separated from the connection layer 55 are arranged on the second temporary substrate 59 in a manner having a predetermined pitch. In addition, a connection end portion 55b which is a residue left when the connection portion 55a is disconnected may be formed on each light emitting element 800. Therefore, the connection end portion 55b is made of the same material as the connection layer 55, and is formed by the connection end portion 55b being disconnected by the connection portion 55a being subjected to an external force, so that the thickness of the connection end portion 55b may be irregular and different from each other.

[0314] And, refer to Fig.25J and Figure 25K , a part of the light emitting element 800 arranged on the second temporary substrate 59 is transferred to another substrate using the pickup portion 70. The pickup portion 70 may include, for example, an elastic stamp.

[0315] The pickup unit 70 picks up a portion of the plurality of light emitting elements 800 and transfers them, and picks up the light emitting elements 800 arranged to match the pitch of the panel substrate 210 by screening. Accordingly, as shown in the figure, the pickup unit 70 does not pick up adjacent light emitting elements 800 together, but picks up the light emitting elements 800 separated by a predetermined distance. The pitch between the picked light emitting elements 800 may be different according to the pitch of the pixels in the transferred panel substrate 210.

[0316] The pickup portion 70 is shown in FIG. Fig.23 The light emitting element 800 is picked up to match the pitch of the pixel P, wherein the picking can be performed in a manner such that one of the blue light emitting element 802, the green light emitting element 804, and the red light emitting element 806 is arranged in one pixel P.

[0317] In the present disclosure, the light-emitting element 800 can be picked up in a state where the first electrode pad 112 and the second electrode pad 114 are arranged on the upper part. Accordingly, in the process of mounting the light-emitting element 800 to the panel substrate 210 using the pickup portion 70, an additional temporary substrate can be used. That is, the light-emitting element 800 picked up by the pickup portion 70 can be preferentially arranged on the additional temporary substrate at a pixel P pitch. The blue light-emitting element 802, the green light-emitting element 804, and the red light-emitting element 806 can all be arranged on the additional temporary substrate to match the pitch of the pixel P. In addition, the blue light-emitting element 802, the green light-emitting element 804, and the red light-emitting element 806 arranged on the additional temporary substrate can be transferred to the panel substrate 210 together. The light-emitting element 800 can be transferred in a manner that the first electrode pad 112 and the second electrode pad 114 are bonded to the panel substrate 210.

[0318] FIG. 26A to FIG. 26L is a schematic cross-sectional view illustrating a method for manufacturing a display device according to still another embodiment.

[0319] Reference Fig.26A , so that the light emitting element 800 is grown on the substrate 51. The substrate 51 can be a substrate for growing a semiconductor layer of the light emitting element 800. When the light emitting element 800 is a blue light emitting element 802 or a green light emitting element 802, a sapphire substrate or a GaN substrate can be used, and when the light emitting element 800 is a red light emitting element 806, a GaAs substrate can be used.

[0320] Reference Fig.26B A first mask layer 53 is formed on the substrate 51 to cover the plurality of light emitting elements 800. The first mask layer 53 is formed to cover all of the plurality of light emitting elements 800 and may be formed on the upper surface of the light emitting element 800 to have a predetermined length.

[0321] Next, refer to Fig.26C , a plurality of holes H are formed in the first mask layer 53. At least one hole H may be formed on each light emitting element 800. In the present disclosure, three holes H may be formed on each light emitting element 800, and the three holes H may be arranged asymmetrically with respect to at least one direction in which the light emitting elements 800 are arranged. Here, the three holes H are arranged asymmetrically with respect to a direction perpendicular to the direction in which the light emitting elements 800 are arranged in the drawings.

[0322] The first mask layer 53 may be formed using a photosensitive material, and a plurality of holes H may be formed by a photolithography process. For example, the plurality of holes H may be formed by an exposure and development process, but is not necessarily limited thereto, and an etching process may also be used. The plurality of holes H may be formed in a triangular shape as shown in the figure.

[0323] Reference Fig.26D , a connection layer 55 is formed on the first mask layer 53. The connection layer 55 is formed on the first mask layer 53 by filling a plurality of holes formed in the first mask layer 53. Since the plurality of holes H are respectively formed on the upper portion of the light emitting element 800, the connection layer 55 can be connected to the light emitting element 800 through at least one hole H formed on the upper portion of the light emitting element 800. A portion of the connection layer 55 fills the hole H formed on the upper portion of the light emitting element 800 to form a connection portion 55a.

[0324] The connection layer 55 can be formed by organic materials such as polydimethylpolysiloxane (PDMS), epoxy, acryl, color polyimide, etc. However, it is not limited thereto. Here, the light transmittance of the connection layer 55 can be more than 90%, and the refractive index can be 1.4 to 1.7.

[0325] Reference Fig.26E , a first temporary substrate 57 is combined on the upper part of the connection layer 55. The first temporary substrate 57 can be a polymer substrate such as PET, PEN, PI sheet, and can also be a substrate such as glass (Glass), PC, PMMA, etc. A thin film portion 61 and a buffer portion 63 can be arranged between the first temporary substrate 57 and the connection layer 55, respectively. For example, a thin film portion 61 can be arranged on the upper part of the connection layer 55, a buffer portion 63 can be arranged on the upper part of the thin film portion 61, and the first temporary substrate 57 can be arranged on the upper part of the buffer portion 63. The buffer portion 63 can be formed using a material that melts by heat or UV irradiation.

[0326] When the first temporary substrate 57 is bonded to the upper portion of the connection layer 55, bubbles that may be formed in the connection layer 55 may be removed in a vacuum state, and a curing process of the connection layer 55 may be performed at a temperature lower than the melting point of the first mask layer 53. During this process, the first temporary substrate 57 may be bonded to the connection layer 55.

[0327] And, refer to Fig.26F , removing the substrate 51 from the light emitting element 800. The substrate 51 may be removed by a laser lift-off process or a wet etching process. For example, when the substrate 51 is a sapphire substrate, the substrate 51 may be removed by a laser lift-off process or a chemical lift-off process, and a GaAs substrate may be removed by a wet etching process.

[0328] Reference Figure 26G, the first mask layer 53 is removed from the light emitting element 800 while the substrate 51 is removed. The first mask layer 53 can be removed by using acetone, a dedicated stripper, dry etching, etc. Accordingly, as shown in the figure, the light emitting element 800 can be connected to the connection layer 55 and maintained by connecting to at least one connection portion 55a of each light emitting element 800.

[0329] Reference Fig.26H , remove the first temporary substrate 57 bonded to the upper portion. The first temporary substrate 57 can be removed by irradiating heat or UV. Since the buffer portion 63 is formed of a material that can be melted by heat or UV irradiation, the first temporary substrate 57 can be removed without damaging the thin film portion 61.

[0330] Reference Fig.26I A second temporary substrate 59 is combined at the lower part of the light emitting element 800. The second temporary substrate 59 can be rubber or UV sheet, or can also be a polymer substrate such as PET, PEN, PI sheet, or can also be a substrate such as glass, PC, PMMA, etc.

[0331] If the second temporary substrate 59 is combined with the light emitting element 800, Fig.26J As shown, the light emitting element 800 is separated from the connection layer 55 using the second temporary substrate 59. By applying downward external force to the second temporary substrate 59 to which the light emitting element 800 is bonded, at least one connection portion 55a connected to each light emitting element 800 is cut off, and the light emitting element 800 is separated from the connection layer 55.

[0332] As shown, the external force applied to the second temporary substrate 59 may be applied in a direction perpendicular to the connection layer 55 relative to one side of the second temporary substrate 59. Therefore, each light emitting element 800 may be separated from the connection layer 55 in a manner that the connection portions 55a connected to each light emitting element 800 are sequentially cut off.

[0333] Reference Figure 26K , the light emitting elements 800 separated from the connection layer 55 are arranged on the second temporary substrate 59 in a manner having a predetermined spacing. At least one connection end 55b as a residue left after the connection portion 55a is disconnected may be formed on each light emitting element 800. The connection end 55b and the connection layer 55 are made of the same material, and the connection end 55b is formed by the connection portion 55a being disconnected due to an external force, so that the thickness of the connection end 55b may be different from each other. And, as shown in the figure, the thickness of the connection end 55b may be less than the thickness of the first electrode pad 112 and the second electrode pad 114.

[0334] And, refer to Figure 26K and Figure 26L The pickup unit 70 is used to transfer a portion of the light emitting elements 800 arranged on the second temporary substrate 59 to another substrate. The transferred substrate may be the panel substrate 210 of the display device 2000, and may also be transferred to a location for other processes as required.

[0335] FIG. 27A to FIG. 27K is a schematic cross-sectional view illustrating a method for manufacturing a display device according to still another embodiment.

[0336] Reference Fig.27A , the light emitting element 800 is formed on a substrate 51. The substrate 51 is a substrate for growing the semiconductor layer of the light emitting element 800, and may be a sapphire substrate, a GaN substrate, or a GaAs substrate. For example, when the light emitting element 800 is a blue light emitting element 802 or a green light emitting element 804, a sapphire substrate may be used, and when the light emitting element 800 is a red light emitting element 806, a GaAs substrate may be used.

[0337] Reference Fig.27B A first mask layer 53 covering the plurality of light emitting elements 800 is formed on the substrate 51. The first mask layer 53 is formed to cover all of the plurality of light emitting elements 800, and can be formed to have a predetermined thickness on the upper surface of the light emitting element 800. The first mask layer 53 can be formed, for example, using a photosensitive material.

[0338] Reference Fig.27C , a first temporary substrate 57 is combined on the first mask layer 53. The first temporary substrate 57 can be a polymer substrate such as PET, PEN, PI sheet, and can also be a substrate such as glass (Glass), PC, PMMA, etc. A buffer portion 63 can be arranged between the first temporary substrate 57 and the first mask layer 53. Therefore, a buffer portion 63 can be arranged on the upper part of the first mask layer 53, and the first temporary substrate 57 can be arranged on the upper part of the buffer portion 63.

[0339] Reference Fig.27D , removing the substrate 51 from the light emitting element 800. The substrate 51 can be removed by a laser lift-off process or a wet etching process. For example, when the substrate 51 is a sapphire substrate, the substrate 51 can be removed by a laser lift-off process or a chemical lift-off process, and when the substrate 51 is a GaAs substrate, the substrate 51 can be removed by a wet etching process.

[0340] Reference Fig.27EAs the substrate 51 is removed, the lower surface of the light emitting element 800 and the lower surface of the first mask layer 53 can be exposed. A second mask layer 65 is formed under the light emitting element 800 and the first mask layer 53 exposed as described above. The second mask layer 65 covers the lower surface of the light emitting element 800 and can be formed to be thinner than the first mask layer 53.

[0341] Reference Fig.27F , a plurality of holes H are formed in the second mask layer 65. At least one hole H may be formed in the lower portion of each light emitting element 800. In the present disclosure, three holes H are formed in the lower portion of each light emitting element 800, and the three holes H may be arranged asymmetrically with respect to at least one direction in which the light emitting elements 800 are arranged. Here, the three holes H are arranged asymmetrically with respect to a direction perpendicular to the direction in which the light emitting elements 800 are arranged in the drawings.

[0342] The second mask layer 65 may be formed of a photosensitive material similar to the first mask layer 53, and a plurality of holes H may be formed by a photolithography process. The plurality of holes H may be formed in a triangular shape as shown in the figure.

[0343] Reference Figure 27G , a connection layer 55 is formed at the lower part of the second mask layer 65. The connection layer 55 is formed at the lower part of the second mask layer 65 by filling a plurality of holes H formed in the second mask layer 65. Since a plurality of holes H are respectively formed at the lower part of each light-emitting element 800, the connection layer 55 can be connected to the light-emitting element 800 through at least one hole H formed at the lower part of the light-emitting element 800. The connection portion 55a filling the hole H is formed together with the connection layer 55. The connection portion 55a can be in direct contact with the first conductive semiconductor layer 23. The connection layer 55 may include organic substances such as polydimethylpolysiloxane (PDMS), epoxy resin, acrylic resin (acryl), color polyimide (color polyimide), etc. However, it is not limited to this. Here, the transmittance of the connection layer 55 can be more than 90%, and the refractive index can be 1.4 to 1.7.

[0344] In addition, a second temporary substrate 59 is combined at the lower part of the connecting layer 55. The second temporary substrate 59 can be a polymer substrate such as PET, PEN, PI sheet, etc., which is the same as the first temporary substrate 57, and can also be a substrate such as glass (Glass), PC, PMMA, etc.

[0345] Reference Fig.27H, remove the first temporary substrate 57 bonded to the upper portion. The first temporary substrate 57 can be removed by heat or UV irradiation. Since the buffer portion 63 is formed of a material that can be melted by heat or UV irradiation, the first temporary substrate 57 can be removed from the first mask layer 53.

[0346] Reference Fig.27I , remove the first mask layer 53 and the second mask layer 65 from the light emitting element 800. The first mask layer 53 and the second mask layer 65 can be removed by using acetone, a special stripper, dry etching, etc. As shown in the figure, the light emitting element 800 can be connected to the connection layer 55 and maintained by connecting to at least one connection portion 55a of each light emitting element 800.

[0347] As described above, if the first mask layer 53 and the second mask layer 65 are removed, Fig.27J As shown, the light emitting element 800 is arranged on the upper part of the second temporary substrate 59 in a state of being connected to the connection layer 55 through the connection part 55a. A part of the light emitting element 800 arranged on the upper part of the second temporary substrate 59 can be transferred to another substrate by the pickup part 70.

[0348] Reference Figure 27K , the light emitting elements 800 picked up by the pick-up part 70 are separated from the connection layer 55 by disconnecting from the connection layer 55 by the connection part 55a. The pick-up part 70 picks up the light emitting element 800 at the upper part of the light emitting element 800, and the connection part 55a is arranged at the lower part of the light emitting element 800. Accordingly, at least one connection end 55b may be formed at the lower part of each light emitting element 800.

[0349] FIG. 28A to FIG. 28O It is a plan view for explaining a modified example of the light emitting element.

[0350] As another embodiment, according to FIG. 28A to FIG. 28O In the light-emitting element 800 of the modified example shown, the connection end portion 55b is arranged on the opposite side of the first electrode pad 112 and the second electrode pad 114 so as to face them. When the connection end portion 55b is arranged in the manner described above, the connection tip 55b performs the function of keeping the light-emitting element 800 balanced during the pickup and mounting process of the light-emitting element 800, thereby preventing the light-emitting element 800 from rotating due to the weight deviation of the light-emitting element 800 itself, thereby causing the problem of position deviation. In the following, for the sake of convenience of explanation, the position of the connection end portion 55b is described as a position opposite to the first electrode pad 112 and the second electrode pad 114. However, the connection end portion 55b and the first electrode pad 112 and the second electrode pad 114 are respectively arranged on the opposite sides of the light-emitting element 800, and they do not contact each other.

[0351] Reference Fig.28A In the first modification, three connection ends 55b are formed on the light emitting element 800 and are arranged between the first electrode pad 112 and the second electrode pad 114. That is, three connection ends 55b are formed on the upper surface of the light emitting element 800. The first electrode pad 112 and the second electrode pad 114 are formed on the lower surface of the light emitting element 800. The shape of the three connection ends 55b can be formed in a triangular shape. Here, the overall area of ​​the three connection ends 55b can be 1.26% of the area on the plane relative to the light emitting element 800.

[0352] Reference Fig.28B In the second modification, three connection ends 55b are formed on the light emitting element 800 and are arranged outside the first electrode pad 112 and the second electrode pad 114. Two connection ends 55b are arranged near the first electrode pad 112 and near two corners outside the first electrode pad 112. And the other connection end 55b is arranged outside the second electrode pad 114. At this time, the two connection ends 55b arranged on the first electrode pad 112 side may be arranged in a direction different from the direction in which the first electrode pad 112 and the second electrode pad 114 are arranged.

[0353] Furthermore, the total area of ​​the three connection end portions 55 b may be 0.65% of the area on the plane of the light emitting element 800 .

[0354] Reference Fig.28C In the third modification, four connection ends 55b are formed on the light emitting element 800, and are widely dispersed on the plane of the light emitting element 800. That is, two of the four connection ends 55b are arranged at positions overlapping the first electrode pad 112 and the second electrode pad 114, and the remaining two are arranged between the first electrode pad 112 and the second electrode pad 114. At this time, the two connection ends 55b arranged at positions overlapping the first electrode pad 112 and the second electrode pad 114 can be arranged at the center of the first electrode pad 112 and the second electrode pad 114, respectively.

[0355] Here, the connection end portions 55 b may be formed in a rhombus shape, and four connection end portions 55 b may be arranged at respective corners of the rhombus shape. At this time, the entire area of ​​the four connection end portions 55 b may be 1.22% relative to the area on the plane of the light emitting element 800 .

[0356] Reference Fig.28DIn the fourth modification, four connection ends 55b are formed on the light emitting element 800. Two of the four connection ends 55b are arranged to partially overlap the first electrode pad 112 and the second electrode pad 114, and the remaining two are arranged between the first electrode pad 112 and the second electrode pad 114. The connection ends 55b of the fourth modification can be arranged at a relatively small pitch relative to the connection ends 55b of the third modification.

[0357] The connection ends 55 b may be formed in a rhombus shape, and the four connection ends 55 b may be arranged at respective corners of the rhombus shape. In this case, the entire area of ​​the four connection ends 55 b may be 1.22% relative to the area on the plane of the light emitting element 800 .

[0358] Reference Fig.28E In the fifth modification, four connection ends 55b are formed on the light emitting element 800. The connection ends 55b in the fifth modification can be arranged in the same manner as the connection ends 55b in the third modification. At this time, the overall area of ​​the connection ends 55b in the fifth modification can be formed to be larger than the connection ends 55b in the third modification, and can be 2.71% of the area on the plane relative to the light emitting element 800.

[0359] Reference Fig.28F In the sixth modification, four connection ends 55b are formed on the light emitting element 800. The connection ends 55b in the sixth modification can be arranged in the same manner as the connection ends 55b in the fourth modification. At this time, the overall area of ​​the connection ends 55b in the sixth modification can be formed to be larger than the connection ends 55b in the fourth modification, and can be 2.71% of the area on the plane relative to the light emitting element 800.

[0360] Reference Figure 28G In the seventh modification, three connection end portions 55b are formed on the light emitting element 800 and are arranged at positions overlapping the first electrode pad 112 and the second electrode pad 114. That is, two connection end portions 55b are arranged at positions overlapping the first electrode pad 112, and the other connection end portion 55b is arranged at a position overlapping the second electrode pad 114. Furthermore, the two connection end portions 55b arranged on the first electrode pad 112 side may be arranged in directions different from the directions in which the first electrode pad and the second electrode pad are arranged.

[0361] The total area of ​​the three connection end portions 55 b may be 0.58% of the area on the plane of the light emitting element 800 .

[0362] Reference Fig.28HIn the eighth modification, three connection ends 55b are formed on the light emitting element 800, and are arranged at a position partially overlapping with the first electrode pad 112 and the second electrode pad 114. One of the three connection ends 55b is arranged at a position partially overlapping with the first electrode pad 112, and the remaining two connection ends 55b are arranged at a position partially overlapping with the second electrode pad 114. At this time, the three connection ends 55b can be formed in a triangular shape, and the three connection ends 55b can be arranged at each corner of the triangular shape. In addition, the connection end 55b of the eighth modification is formed larger than the connection end 55b of the first modification, and can be 2.76% of the area on the plane relative to the light emitting element 800.

[0363] Referring to No. 28I, in the ninth modification, four connection ends 55b formed on the light emitting element 800 are provided and arranged at a position overlapping the first electrode pad 112 and the second electrode pad 114. Two of the four connection ends 55b are arranged at a position overlapping the first electrode pad 112, and the remaining two connection ends 55b are arranged at a position overlapping the second electrode pad 114. Here, the connection end 55b of the ninth modification can be formed in a triangular shape. And, the overall area of ​​the connection end 55b can be 1.68% of the area on the plane relative to the light emitting element 800.

[0364] Reference Fig.28J In the tenth modification, three connection ends 55b are formed on the light emitting element 800 and are arranged at positions overlapping the first electrode pad 112 and the second electrode pad 114. One of the three connection ends 55b is arranged at a position overlapping the first electrode pad 112, and the remaining two connection ends 55b are arranged at positions overlapping the second electrode pad 114. In addition, the overall area of ​​the connection end 55b may be 1.26% relative to the area on the plane of the light emitting element 800.

[0365] Reference Figure 28K In the 11th modification, three connection end portions 55b are formed on the light emitting element 800 and are arranged at positions overlapping the first electrode pad 112 and the second electrode pad 114. Two of the three connection end portions 55b are arranged at positions overlapping the first electrode pad 112, and the other connection end portion 55b is arranged at a position overlapping the second electrode pad 114. In addition, the overall area of ​​the connection end portion 55b may be 1.26% of the area on the plane of the light emitting element 800.

[0366] Reference Figure 28LIn the twelfth modification, the connection end portion 55b formed in the light emitting element 800 is arranged between the first electrode pad 112 and the second electrode pad 114. The connection end portion 55b is formed to have: a base 55ba having a length in a direction perpendicular to the direction in which the first electrode pad 112 and the second electrode pad 114 are arranged; a first extension portion 55bb arranged at one end of the length direction of the base 55ba and extending in the direction toward the first electrode pad 112; and a second extension portion 55bc arranged at the other end of the length direction of the base 55ba and extending in the direction toward the second electrode pad 114. At this time, the first extension portion 55bb and the second extension portion 55bc can be formed to have a shape in which the width becomes narrower as they are farther away from the base 55ba.

[0367] In this case, the entire area of ​​the connection end portion 55 b may be 1.92% of the area on the plane of the light emitting element 800 .

[0368] Reference Figure 28M In the 13th modification, the connection end portion 55b formed in the light emitting element 800 is arranged between the first electrode pad 112 and the second electrode pad 114. The connection end portion 55b is formed to have: a base 55ba having a length in a direction perpendicular to the direction in which the first electrode pad 112 and the second electrode pad 114 are arranged; a first extension portion 55bb extending from the central portion of the base 55ba in a direction toward the first electrode pad 112; and a second extension portion 55bc extending from the central portion of the base 55ba in a direction toward the second electrode pad 114. At this time, the first extension portion 55bb and the second extension portion 55bc can be formed in a shape in which the width becomes narrower as they are farther away from the base 55ba.

[0369] In this case, the entire area of ​​the connection end portion 55 b may be 1.161% of the area on the plane of the light emitting element 800 .

[0370] Reference Figure 28NIn the 14th variation, four connection ends 55b are formed on the light emitting element 800. Two of the four connection ends 55b are arranged at positions overlapping the first electrode pad 112 and the second electrode pad 114, and the remaining two are arranged between the first electrode pad 112 and the second electrode pad 114. At this time, the connection ends 55b arranged at the first electrode pad 112 and the second electrode pad 114 can be arranged at the edge positions of the first electrode pad 112 and the second electrode pad 114, respectively. At this time, the connection end 55b arranged to overlap with the first electrode pad 112 can be arranged at a position close to the second electrode pad 114 on the first electrode pad 112, and the connection end 55b arranged to overlap with the second electrode pad 114 can be arranged at a position close to the first electrode pad 112 on the second electrode pad 114. At this time, the overall area of ​​the four connection ends 55b can be 0.49% relative to the area on the plane of the light emitting element 800.

[0371] Reference Fig.28O In the fifteenth variation, four connection ends 55b are formed on the light emitting element 800. One connection end is arranged substantially at the center of the light emitting element 800, two connection ends are arranged at a position overlapping the second electrode pad 114, and one connection end is arranged at a position overlapping the first electrode pad 112. The three connection ends 55b are formed in a triangular shape in the outer contour, and the connection end 55b arranged at the center of the light emitting element 800 can be located within the triangle formed by the three connection ends 55b.

[0372] The two connection end portions arranged at a position overlapping with the second electrode pad 114 are arranged near one side edge position of the second electrode pad 114 , and may be arranged opposite to each other with respect to a long straight line passing through the center.

[0373] In addition, the connection end portion arranged at a position overlapping with the first electrode pad 112 is arranged near a side edge position of the first electrode pad 112 and may be arranged away from a long straight line passing through the center.

[0374] The connection end portions may be respectively formed to have a right triangle shape, and the connection end portion arranged at the center of the light emitting element 800 may be arranged in an opposite direction with respect to the other connection end portions as shown in the drawing.

[0375] If an independent connection tip 55b is arranged between the connection tips 55b arranged on the outer contour as described above, it can support and disperse the pressure applied to the light emitting element 800 during the process, thereby preventing the light emitting element 800 from being broken or bent.

[0376] When the light emitting element is separated from the connection portion using the connection end, the connection end overlapping the first electrode pad 112 is formed first, then the connection end near the center is formed, and finally the connection end overlapping the second electrode pad 114 is formed. Accordingly, the light emitting element can be easily separated from the connection portion, and cracks that may be generated in the light emitting element can be prevented from occurring.

[0377] In addition, when picking up or mounting the light emitting element 800, the light emitting element 800 may be unstably picked up or mounted depending on the position of the connection end, and cracks may be generated. In contrast, the light emitting element 800 can be stably picked up or mounted by arranging the connection ends at both side edge positions of the light emitting element 800 and near the center of the light emitting element 800, thereby preventing cracks that may be generated in the light emitting element.

[0378] In this case, the total area of ​​the four connection end portions 55 b may be 0.8% of the area on the plane of the light emitting element 800 .

[0379] As described above, by varying the area of ​​the connection end portion 55 b formed on the light emitting element 800 , Table 1 shows the area ratio of the connection end portion 55 b and the success probability when picking up the light emitting element 800 .

[0380] [Table 1]

[0381]

[0382]

[0383] It was confirmed from the first to fifteenth modified examples that the success rate of picking up the light emitting element 800 was good when the area ratio of the connection end portion 55 b to the area of ​​the light emitting element 800 on the plane was 1.2% or less.

[0384] Fig.29A FIG. 1 is a schematic plan view showing a light emitting element 811 according to another embodiment of the present invention. Fig.29B is along Fig.29A Here, a first light-emitting element 811 among the light-emitting elements used in the pixel P is described as a representative component, but it can also be applied to other light-emitting elements described later, for example, the second light-emitting element 813 and the third light-emitting element 815.

[0385] Reference Fig.29A and Fig.29BThe first light emitting element 811 may include: a first conductive semiconductor layer 2110, an active layer 2112, a second conductive semiconductor layer 2114, an ohmic contact layer 2116, an insulating layer 2120, a first terminal 2122, and a second terminal 2124. In addition, the connection end portion 55b may be arranged on the first conductive semiconductor layer 2110 side facing the first terminal 2122 and the second terminal 2124.

[0386] The first conductive semiconductor layer 2110, the active layer 2112, and the second conductive semiconductor layer 2114 can be grown on a substrate. The substrate can be a gallium nitride substrate, a GaAs substrate, a Si substrate, a sapphire substrate, and in particular, a patterned sapphire substrate, and other substrates that can be used for semiconductor growth. The growth substrate can be separated from the semiconductor layer by mechanical grinding, laser stripping, chemical stripping, and other techniques. However, the present invention is not limited to this, and a portion of the substrate can remain to constitute at least a portion of the first conductive semiconductor layer 2110.

[0387] For a light-emitting element emitting green light, the semiconductor layer may include: indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP) or aluminum gallium phosphide (AlGaP). In one embodiment, for a light-emitting element emitting red light, the second semiconductor layer may include: aluminum galliumarsenide (AlGaAs), galliumarsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP) or gallium phosphide (GaP). In one embodiment, for a light-emitting element emitting blue light, the semiconductor layer may include: gallium nitride (GaN), indium gallium nitride (InGaN) or zinc selenide (ZnSe).

[0388] The semiconductor layer specifically includes a first conductivity type semiconductor layer 2110, an active layer 2112, and a second conductivity type semiconductor layer 2114. The first conductivity type and the second conductivity type are opposite polarities to each other, and when the first conductivity type is n-type, the second conductivity type is p-type; when the first conductivity type is n-type, the second conductivity type is n-type.

[0389] The first conductive semiconductor layer 2110, the active layer 2112, and the second conductive semiconductor layer 2114 can be formed on the substrate in a cavity by a well-known method such as metal organic chemical vapor deposition (MOCVD). In addition, the first conductive semiconductor layer 2110 includes n-type impurities (e.g., Si, Ge, Sn), and the second conductive semiconductor layer 2114 includes p-type impurities (e.g., Mg, Sr, Ba). In one embodiment, the first conductive semiconductor layer 2110 may include GaN or AlGaN containing Si as a dopant, and the second conductive semiconductor layer 2114 may include GaN or AlGaN containing Mg as a dopant.

[0390] In the drawings, the first conductive semiconductor layer 2110 and the second conductive semiconductor layer 2114 are shown as single layers, but they can also be multiple layers and can include a superlattice layer. The active layer 2112 can include a single quantum well structure or a multi-quantum well structure, and the composition ratio of the nitride-based semiconductor can be adjusted to release the required wavelength. For example, the active layer 155 can release blue light, green light, red light or ultraviolet light.

[0391] The second conductive type semiconductor layer 2114 and the active layer 2112 have a mesa M structure and are arranged on the first conductive type semiconductor layer 2110. The mesa M includes the second conductive type semiconductor layer 2114 and the active layer 2112, and may be formed as shown in FIG. Fig.29B As shown, the first conductive semiconductor layer 2110 includes a portion thereof. If the mesa M is located on a portion of the first conductive semiconductor layer 2110, the upper surface of the first conductive semiconductor layer 2110 may be exposed around the mesa M.

[0392] In addition, the mesa M may have a through hole 2114a exposing the first conductive semiconductor layer 2110. The through hole 2114a may be arranged close to one edge of the mesa M, but is not limited thereto, and may also be arranged in the center of the mesa M.

[0393] The ohmic contact layer 2116 is arranged on the second conductive semiconductor layer 2114, so as to make ohmic contact with the second conductive semiconductor layer 2114. The ohmic contact layer 2116 can be formed as a single layer or a multilayer, and can be formed using a transparent conductive oxide film or a metal film. The transparent conductive oxide film can be, for example, ITO or ZnO, and the metal film can be Al, Ti, Cr, Ni, Au, and their alloys.

[0394] The insulating layer 2120 covers the mesa M and the ohmic contact layer 2116. Furthermore, the insulating layer 2110 may cover the upper surface and the side surface of the first conductive type semiconductor layer 2110 exposed around the mesa M. In addition, the insulating layer 2110 may have an opening 2120b that exposes the first conductive type semiconductor layer 2110 in the opening 2120a that exposes the ohmic contact layer 2116 and the through hole 2114a. The insulating layer 2120 may be formed as a single layer or multiple layers of a silicon oxide film or a silicon nitride film. In addition, the insulating layer 2120 may also include an insulating reflector such as a distributed Bragg reflector.

[0395] The first terminal 2122 and the second terminal 2124 are disposed on the insulating layer 2120. The first terminal 2122 may be electrically connected to the ohmic contact layer 2116 through the opening 2120a, and the second terminal 2124 may be electrically connected to the first conductive type semiconductor layer 2110 through the opening 2120b.

[0396] The first terminal 2122 and / or the second terminal 2124 may be formed of a single layer or multiple layers of metal. The material of the first terminal 2122 and / or the second terminal 2124 may include various metals such as Al, Ti, Cr, Ni, Au, and alloys thereof.

[0397] In addition, the connection end 55b can be Fig.28O The arrangement is described in the manner described above, but it is not limited thereto and can also be arranged in other positions. Fig.28O Arrangement in the manner described can effectively prevent cracks from occurring in the light emitting element.

[0398] In one embodiment of the present disclosure, the light emitting element is briefly described with reference to the accompanying drawings, but the light emitting element may include layers with additional functions in addition to the above-mentioned layers. For example, it may include a reflection layer for reflecting light, an additional insulation layer for insulating specific components, a solder prevention layer for preventing the diffusion of solder, and other various layers.

[0399] Furthermore, in the case of forming a flip-chip type light-emitting element, the mesa can be formed in various forms, and the positions or shapes of the first terminal 2122 and the second terminal 2124 can also be changed in various ways. In addition, the ohmic contact layer 2116 can be omitted, and the first terminal 2122 can directly contact the second conductive semiconductor layer 2114. In addition, as in the light-emitting elements 511 and 611 described above, the second contact layer can be formed on the first conductive semiconductor layer 2110, and the second terminal 2124 can be connected to the second contact layer.

[0400] Fig. 30AFIG. 1 is a schematic plan view for explaining a pixel area Pa according to still another embodiment of the present invention. Fig. 30B is along Fig. 30A Here, the pixel Pa represents a light emitting module including at least one pixel P or a region in which one pixel P is arranged in a pixel unit.

[0401] Reference Fig. 30A and Fig. 30B , the pixel area Pa may include: a base substrate 900; first to third light-emitting elements 811, 813, 815; an alignment mark 901; a light blocking layer 902; an adhesive layer 903; a step adjustment layer 905; a connecting layer 907a, 907b, 907c; bumps 921, 923, 925, 930; and a protective layer 909.

[0402] In this embodiment, the base substrate 900 does not include a circuit, and the base substrate 900 is a light-transmitting substrate such as a glass substrate, a quartz substrate, or a sapphire substrate.

[0403] Here, one pixel region Pa is shown, but a plurality of pixels P may be formed on one base substrate 900 .

[0404] The base substrate 900 is arranged on the light-emitting surface of the display device. The light emitted from the light-emitting elements 811, 813, and 815 is emitted to the outside through the base substrate 900. The light-emitting surface of the base substrate 900 may include a concavoconvex PR, and the concavoconvex PR may improve the light-emitting efficiency, thereby being able to emit more uniform light. The base substrate 900 may have a thickness of, for example, 50 um to 500 um.

[0405] The light blocking layer 902 may include a light absorbing material such as carbon black that absorbs light. The light absorbing material prevents light generated from the light emitting elements 811, 813, 815 from leaking toward the side from the region between the base substrate 900 and the light emitting elements 811, 813, 815, and can improve the contrast of the display device.

[0406] The light blocking layer 902 may have a window for a light path in order to allow light generated from the light emitting elements 811, 813, and 815 to enter the base substrate 900, and may be patterned to expose the base substrate 900 on the base substrate 900. The width of the window may be narrower than the width of the light emitting element.

[0407] The adhesive layer 903 is attached to the base substrate 900 . The adhesive layer 903 may be attached to the front surface of the base substrate 900 and used to attach the light emitting elements 811 , 813 , and 815 . The adhesive layer 903 may fill the window formed in the light blocking layer 902 .

[0408] The adhesive layer 903 allows light emitted from the light emitting elements 811, 813, and 815 to pass through the light-transmitting layer. The adhesive layer 903 may include a diffuser such as SiO2, TiO2, or ZnO to diffuse light. The light diffuser prevents the light emitting elements 811, 813, and 815 from being observed from the light emitting surface.

[0409] The alignment marks indicate positions for arranging the first to third light emitting elements 811, 813, 815 (in Fig. 30B The alignment mark 901 may be formed on the base substrate 900 or on the adhesive layer 903 .

[0410] In addition, the first to third light emitting elements 811, 813, and 815 are respectively arranged on the area formed by the alignment mark 901. The first to third light emitting elements 811, 813, and 815 can be, for example, a green light emitting element, a red light emitting element, and a blue light emitting element. In this embodiment, the first to third light emitting elements 811, 813, and 815 are arranged in a triangle, but this is not limited to this, and can also be arranged in a row.

[0411] The first to third light emitting elements 811, 813, 815 may be referred to above. Fig.29A and Fig.29B The light emitting elements described above are not limited thereto, and various light emitting elements of a horizontal type or a flip chip type structure may also be used.

[0412] The step adjustment layer 905 covers the first to third light emitting elements 811, 813, and 815. The step adjustment layer 905 has an opening 905a that exposes the first terminal 2122 and the second terminal 2124 of the light emitting element. The step adjustment layer 905 is formed to make the height of the position where the bump is formed uniform when the bump is formed. The step adjustment layer 905 can be formed using polyimide, for example.

[0413] The connection layers 907a, 907b, and 907c are formed on the step adjustment layer 905. The connection layers 907a, 907b, and 907c are connected to the first terminal 2122 and the second terminal 2124 of the first to third light emitting elements 811, 813, and 815 through the opening 905a of the step adjustment layer 905.

[0414] For example, the connection layer 907a is electrically connected to the first conductive semiconductor layer of the second light emitting element 813, and the connection layer 907c is electrically connected to the second conductive semiconductor layers of the first to third light emitting elements 811, 813, and 815. The connection layers 907a and 907c may be formed together on the step adjustment layer 905, and may include, for example, Au.

[0415] Bumps 921, 923, 925, and 930 are formed on the above-mentioned connection layer 907a. For example, the first bump 921 can be electrically connected to the first conductive semiconductor layer of the first light-emitting element 811 through the connection layer 907a, the second bump 923 can be electrically connected to the first conductive semiconductor layer of the second light-emitting element 813 through the connection layer 907a, and the third bump 925 can be electrically connected to the first conductive semiconductor layer of the third light-emitting element through the connection layer 907a. In addition, the fourth bump 930 can be commonly connected to the second conductive semiconductor layers of the first to third light-emitting elements 811, 813, and 815 through the connection layer 907a. Bumps 921, 923, 925, and 930 can be formed, for example, using solder.

[0416] In addition, the protective layer 909 covers the side surfaces of the bumps 921, 923, 925, and 930, and can cover the step adjustment layer 905. In addition, the protective layer 909 can cover the adhesive layer 903 exposed around the step adjustment layer 905. The protective layer 909 can be formed using, for example, a photosensitive solder resist PSR, and therefore, the protective layer 909 can be patterned by photolithography or development first, and then the bumps 921, 923, 925, and 930 can be formed using solder. The protective layer 909 can also be formed using a light absorbing material such as a white reflective material or a black epoxy resin to prevent light leakage.

[0417] Although various embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments. In addition, matters or components described in one embodiment may also be applied to other embodiments within the scope of the technical concept of the present disclosure.

Claims

1. A display device, comprising: A panel substrate, including a pixel region; as well as A plurality of light emitting elements are arranged on a pixel area of ​​the panel substrate; as well as A bump is arranged on the pixel area of ​​the panel substrate and is electrically connected to the plurality of light emitting elements, Wherein, each of the plurality of light emitting elements comprises: A light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer sandwiched between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and A first electrode pad and a second electrode pad are arranged on the light emitting structure, The bump is electrically connected to the first electrode pad and the second electrode pad of the light emitting element. Wherein, the distance from the upper surface of the panel substrate to the active layer is 5 micrometers to 10 micrometers.

2. The display device according to claim 1, wherein: The panel substrate further includes a non-pixel region surrounding the pixel region.

3. The display device according to claim 1, wherein: Each of the plurality of light emitting elements has a width or length ranging from 10 micrometers to 300 micrometers, The plurality of light emitting elements include a first light emitting element, a second light emitting element, and a third light emitting element.

4. The display device according to claim 3, wherein: At least one of the first light emitting element, the second light emitting element, and the third light emitting element emits light different from that of the other light emitting elements.

5. The display device according to claim 2, further comprising: The insulating layer is arranged on the plurality of light emitting elements and is disposed in the entire pixel region and the non-pixel region.

6. The display device according to claim 5, wherein: The insulating layer includes a first insulating layer and a second insulating layer disposed on the first insulating layer.

7. The display device according to claim 6, wherein: The first insulating layer includes a different material than the second insulating layer.

8. The display device according to claim 5, wherein: The insulating layer includes a plurality of contact holes to expose at least a portion of the first electrode pad and the second electrode pad.

9. The display device according to claim 5, further comprising: The terminal portion is arranged on the insulating layer and is in electrical contact with the light emitting element.

10. The display device according to claim 9, wherein: The terminal portion includes: a common pad for applying a common voltage to the light emitting element; and The data pad is used to apply an image signal to the light emitting element.

Images