Light emitting diode packaging structure and preparation method thereof

Abstract

The present application provides a light-emitting diode packaging structure and a preparation method thereof, which belongs to the field of semiconductor technology. The light-emitting diode packaging structure includes a substrate, a light-emitting chip and a lens. A circuit layer is provided on the substrate, and a crystal placement area is provided on the circuit layer. The light-emitting chip is provided in the crystal placement area and is electrically connected to the circuit layer. The lens covers the light-emitting chip and the crystal placement area, and an annular solderable layer is provided at the edge of the lens, and the solderable layer is insulated and connected to the circuit layer. The lens is packaged using the solderable layer, and there is no need to use an organic adhesive for bonding, so as to solve the problem of yellowing or cracking of the organic adhesive, so as to improve the problem of packaging failure of the light-emitting diode packaging structure after long-term use.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a light emitting diode packaging structure and a preparation method thereof. Background Art

[0002] With the continuous advancement of semiconductor light-emitting technology, semiconductor devices in the ultraviolet band have received great attention in recent years. Ultraviolet light-emitting diodes have the advantages of energy saving, environmental protection, and high efficiency. In the fields of lighting, medical treatment, printing, and sterilization, the trend of replacing traditional mercury lamps is becoming increasingly significant. After long-term use, the chip packaging structure of traditional light-emitting diodes will have problems such as packaging failure and lens detachment. Summary of the invention

[0003] The purpose of the present application is to provide a light emitting diode packaging structure and a preparation method thereof, so as to solve the problem of packaging failure of the light emitting diode packaging structure after long-term use.

[0004] In a first aspect, an embodiment of the present application provides a light-emitting diode packaging structure, including a substrate, a light-emitting chip, and a lens. A circuit layer is provided on the substrate, and a crystal placement area is provided on the circuit layer. The light-emitting chip is provided in the crystal placement area and is electrically connected to the circuit layer. The lens covers the light-emitting chip and the crystal placement area, and an annular solderable layer is provided on the edge of the lens, and the solderable layer is insulated and connected to the circuit layer.

[0005] The light-emitting chip can be powered through the circuit layer set on the substrate, so that the light-emitting chip can emit light normally, and the light can be used through the lens. Since the edge of the lens is provided with a ring-shaped solderable layer, and the solderable layer is insulated and connected to the circuit layer, the light-emitting diode is packaged, and there is no need to use organic adhesive to bond the lens, thus avoiding the yellowing or cracking of the organic adhesive, so as to improve the problem of packaging failure of the light-emitting diode packaging structure after long-term use.

[0006] In a possible implementation, an insulating layer is further provided, the insulating layer is located between the circuit layer and the solderable layer, and a through hole is further provided on the insulating layer, so that the light-emitting chip and the die-placement area are exposed within the coverage of the lens.

[0007] By setting the insulating layer, the solderable layer and the circuit layer can be prevented from being connected, thus avoiding the occurrence of short circuit accidents.

[0008] In a possible implementation, one side of the lens has an opening, an edge of the opening is plated with a solderable layer, and the solderable layer is connected to the insulating layer.

[0009] The lens is a hollow structure, and a part of the light-emitting chip can be located in the hollow structure of the lens, which can reduce the volume of the packaging structure.

[0010] In a possible implementation, the solderable layer includes a gold solderable layer, a silver solderable layer, a tin solderable layer, and an alloy solderable layer thereof. Optionally, the solderable layer is a circular ring structure, the width of the solderable layer is 1.5-2.5 mm, and the thickness of the solderable layer is 0.15-0.25 mm.

[0011] The selection of the above solderable layer can more easily realize glue-free connection of the lens by eutectic soldering. The above solderable layer of width and thickness can realize firm soldering of the lens while effectively avoiding conduction between the solderable layer and the light-emitting chip.

[0012] In a possible implementation, the lens is a glass lens or a ceramic lens. Using a glass lens made of glass or a ceramic lens made of ceramic to replace a traditional organic glue lens does not require the use of organic glue, which can prevent the light emitted by the light-emitting chip from being absorbed by the organic glue of the organic glue lens, and can avoid the problem of low light output rate after long-term use of the improved packaging structure.

[0013] In a possible implementation, the substrate includes a metal plate and an insulating plate disposed on the metal plate, and the circuit layer is disposed on the insulating plate. Optionally, the metal plate is an aluminum plate or a copper plate.

[0014] The metal plate has a good heat dissipation effect, and an insulating plate is arranged between the metal plate and the circuit layer, so that the metal plate and the circuit layer can be insulated and connected.

[0015] In a possible implementation, the light-emitting chip is an ultraviolet light-emitting chip, and the crystal placement area, the ultraviolet light-emitting chip, and the lens are all included in a plurality and arranged in an array. The ultraviolet light-emitting chip and the crystal placement area are arranged one by one, and one lens covers one crystal placement area and the ultraviolet light-emitting chip mounted on the crystal placement area. The edge of each lens is provided with a solderable layer, and the solderable layer is insulated and connected to the circuit layer.

[0016] The ultraviolet light emitting chip emits ultraviolet light, which is more easily absorbed by organic glue. Therefore, the glue-free packaging structure used in the present application can effectively prevent the ultraviolet light from being absorbed by the organic glue. There will be no yellowing, cracking, light attenuation and device failure problems during long-term operation, thereby improving the stability and reliability of the packaging structure.

[0017] In a possible implementation, the circuit layer includes a plurality of circuit areas spaced side by side, the chip placement area is disposed between two adjacent circuit areas, and the ultraviolet light-emitting chip mounted on the chip placement area is configured to be electrically connected to the two adjacent circuit areas.

[0018] Without using organic adhesives or gold wires, conduction of multiple array-arranged ultraviolet light-emitting chips is achieved to achieve better packaging effects.

[0019] In a second aspect, the present application provides a method for preparing a light-emitting diode packaging structure, comprising the following steps: forming an annular solderable layer at the edge of a lens; forming a circuit layer on a substrate, and correspondingly providing a crystal placement area on the circuit layer; soldering a light-emitting chip to the crystal placement area, and electrically connecting the light-emitting chip to the circuit layer; and covering the light-emitting chip and the crystal placement area with a lens, so that the solderable layer is insulated and connected to the circuit layer.

[0020] The lens is packaged by first forming a solderable layer on the edge of the lens and then insulating and connecting the solderable layer to the circuit layer. There is no need to use an organic adhesive to bond the lens, thus avoiding problems such as yellowing or cracking of the organic adhesive, thereby improving the problem of packaging failure of the light-emitting diode packaging structure after long-term use.

[0021] In a possible embodiment, the preparation method includes the following steps: forming a first annular solderable layer on the edge of the lens. Forming a circuit layer on the substrate, and correspondingly providing a crystal placement area on the circuit layer. Forming an insulating layer on the circuit layer, and forming a through hole on the insulating layer to expose the crystal placement area. Forming a second annular solderable layer on the edge of the insulating layer near the through hole. Soldering the light-emitting chip to the crystal placement area, and electrically connecting the light-emitting chip to the circuit layer. Covering the light-emitting chip and the crystal placement area with a lens, and soldering the first solderable layer to the second solderable layer.

[0022] The first solderable layer and the second solderable layer are respectively formed on the edge of the lens and the insulating layer, and then the first solderable layer and the second solderable layer are welded to realize glue-free packaging of the lens, which is simpler to operate and easier to realize. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, without paying any creative work, other related drawings can be obtained based on these drawings and they also belong to the protection scope of the present application.

[0024] Figure 1 An exploded view of the light emitting diode packaging structure provided in an embodiment of the present application;

[0025] Figure 2 A first view of the light emitting diode package structure provided in an embodiment of the present application;

[0026] Figure 3 An electrical connection diagram of a light emitting diode packaging structure provided in an embodiment of the present application;

[0027] Figure 4 A cross-sectional view of a light emitting diode packaging structure provided in an embodiment of the present application;

[0028] Figure 5 for Figure 4 The enlarged image of point V in the middle;

[0029] Figure 6 A flow chart for preparing a light-emitting diode packaging structure provided in an embodiment of the present application.

[0030] Icon: 10-substrate; 20-light-emitting chip; 30-lens; 11-metal plate; 12-insulating plate; 40-circuit layer; 41-crystal placement area; 42-circuit area; 43-soldering point; 60-solderable layer; 70-insulating layer; 71-through hole; 61-first solderable layer; 62-second solderable layer. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application.

[0032] In the prior art, after long-term use, the UV LED packaging structure will have packaging failure problems, and the light extraction efficiency will become lower and lower. The inventors have found that the lens of the UV LED packaging structure is an organic glue lens made of organic glue, and the organic glue lens is bonded and fixed by organic adhesive (organic adhesive is a kind of organic glue), and the UV light emitting chip is insulated and bonded to the circuit layer by the organic adhesive, and then the UV light emitting chip and the circuit layer are connected by gold wire.

[0033] Since part of the ultraviolet light emitted by the ultraviolet light-emitting chip will be absorbed by the organic adhesive, especially when the wavelength of the ultraviolet light emitted by the ultraviolet light-emitting chip is lower than 380nm, the phenomenon of ultraviolet light being absorbed by the organic adhesive will be more obvious, which will cause the yellowing of the organic adhesive lens, thereby causing the problem of low light output efficiency of the ultraviolet light-emitting diode packaging structure. On the other hand, part of the ultraviolet light emitted by the ultraviolet light-emitting chip will also be absorbed by the organic adhesive, which will cause the conductive organic adhesive to yellow and crack, resulting in reduced adhesion of the optical component to the packaging substrate, further leading to problems such as optical component shedding and packaging failure.

[0034] Therefore, the inventor has studied a light emitting diode packaging structure, which can reduce or even avoid the use of organic glue, so that the packaging effect of the light emitting diode packaging structure is better, so as to improve the problem of packaging failure and the problem of low light output efficiency.

[0035] Figure 1 This is an exploded view of the light emitting diode packaging structure provided in this embodiment. Figure 1 In this embodiment, the light emitting diode package structure includes a substrate 10 , a light emitting chip 20 and a lens 30 .

[0036] Among them, the substrate 10 mainly plays the role of support and heat conduction. Optionally, the substrate 10 includes a metal plate 11 and an insulating plate 12. The insulating plate 12 is arranged on a surface of the metal plate 11. The metal plate 11 is made of a material with high thermal conductivity. For example, the metal plate 11 can be an aluminum plate or a copper plate. The metal plate 11 has a better heat dissipation effect.

[0037] In this embodiment, in order to achieve conduction of the light emitting chip 20 , a circuit layer 40 is disposed on the insulating plate 12 (the circuit layer 40 is disposed on the surface of the insulating plate 12 of the substrate 10 that is away from the metal plate 11 ).

[0038] Figure 2 A first view of the light emitting diode package structure provided in the embodiment of the present application (in order to clearly show the installation structure of the light emitting chip 20, Figure 2 The lens 30 is not shown. Figure 1 and Figure 2 In this embodiment, a plurality of crystal placement areas 41 are provided on the circuit layer 40, and the light-emitting chip 20 includes a plurality of light-emitting chips 20, which are arranged one-to-one with the crystal placement areas 41 (one light-emitting chip 20 is installed in one crystal placement area 41). After the light-emitting chip 20 is installed in the crystal placement area 41, it is electrically connected to the circuit layer 40 so that the light-emitting chip 20 can work.

[0039] Optionally, the circuit layer 40 includes a plurality of circuit areas 42 spaced side by side, the crystal placement area 41 is disposed between two adjacent circuit areas 42 , and the light emitting chip 20 mounted on the crystal placement area 41 is configured to be electrically connected to the two adjacent circuit areas 42 .

[0040] like Figure 2 As shown, the crystal placement areas 41 are distributed in an array, and the light-emitting chips 20 installed on the crystal placement areas 41 are also distributed in an array. For example, there are nine circuit areas 42 (in other embodiments, the circuit areas 42 can also be seven, eight or ten, which is not limited in this embodiment), and the nine circuit areas 42 are all arranged on the insulating plate 12. The nine circuit areas 42 are arranged at intervals, and the circuit areas 42 are basically parallel to each other, which can avoid direct conduction between the circuit areas 42 and the circuit areas 42, thereby avoiding short circuit of the light-emitting chip 20.

[0041] Please continue reading Figure 2 In this embodiment, the crystal placement area 41 is arranged between two adjacent circuit areas 42. For example, there are four crystal placement areas 41 between every two adjacent circuit areas 42 (in other embodiments, there may also be three, five or six crystal placement areas 41, which is not limited in this embodiment). After the light-emitting chip 20 is installed in the crystal placement area 41, the light-emitting chip 20 can be electrically connected to the two adjacent circuit areas 42.

[0042] Figure 3This is the electrical connection diagram of the light emitting diode package structure provided in this embodiment. Figure 2 and Figure 3 In this embodiment, along the arrangement direction of the plurality of circuit areas 42, welding points 43 are provided on the first circuit area 42 and the last circuit area 42, and the two welding points 43 are connected to the external power supply to form a closed loop so that the light-emitting chip 20 can work. Optionally, the welding point 43 on the first circuit area 42 is connected to the first electrode (positive or negative), and the welding point 43 on the last circuit area 42 is connected to the second electrode (negative or positive), and the first electrode and the second electrode are just opposite in polarity. For example: the first electrode is the positive electrode, and the second electrode is the negative electrode. The current is introduced from the positive electrode into the first circuit area 42, and then passes through the light-emitting chip 20, so that the current enters the circuit area 42 adjacent to the first circuit area 42, and so on, the current enters the negative electrode connected to the welding point 43 of the last circuit area 42 to form a loop, so that each light-emitting chip 20 is powered on and used normally. In this configuration, the light emitting chip 20 and the circuit area 42 are electrically connected by reflow soldering, and there is no need to bond the light emitting chip 20 with an organic adhesive or to use a gold wire to connect the light emitting chip 20 to the circuit layer 40 .

[0043] Figure 4 A cross-sectional view of a light emitting diode packaging structure provided in an embodiment of the present application; Figure 5 for Figure 4 Enlarged view of point V in the middle. Please refer to Figure 1 , Figure 4 and Figure 5 In this embodiment, the lens 30 includes a plurality of lenses, and one lens 30 is installed corresponding to one light emitting chip 20. The lens 30 covers a crystal placement area 41 and the light emitting chip 20 installed in the crystal placement area 41. The edge of each lens 30 is provided with an annular solderable layer 60, and the solderable layer 60 is insulated and connected to the circuit layer 40.

[0044] Since the solderable layer 60 is disposed at the edge of the lens 30 and the solderable layer 60 is insulated and connected to the circuit layer 40 , the light emitting diode is packaged, and there is no need to use an organic adhesive to bond the lens 30 .

[0045] Furthermore, the lens 30 is not made of organic glue either, and the lens 30 can be a glass lens 30 or a ceramic lens 30. The glue-free packaging of the LED packaging structure is realized, thereby preventing part of the ultraviolet light from being absorbed by the organic glue lens and causing the organic glue lens to turn yellow, and improving the problem of low light output efficiency of the LED packaging structure after long-term use.

[0046] In this embodiment, the solderable layer 60 includes one of a gold solderable layer, a silver solderable layer, a tin solderable layer, and an alloy solderable layer thereof. For example, the solderable layer 60 may be a gold solderable layer; the solderable layer 60 may be a silver solderable layer; the solderable layer 60 may be a tin solderable layer; the solderable layer 60 may be a gold-silver alloy solderable layer; the solderable layer 60 may be a gold-tin alloy solderable layer; the solderable layer 60 may be a silver-tin alloy solderable layer. The solderable layer 60 may be conductive. In order to achieve an insulated connection between the solderable layer 60 and the circuit layer 40, an insulating layer 70 is provided between the solderable layer 60 and the circuit layer 40.

[0047] Optionally, the surface of the circuit layer 40 facing away from the substrate 10 is provided with an insulating layer 70 having a through hole 71, so that the light emitting chip 20 and the crystal placement area 41 are exposed within the coverage of the lens 30, the crystal placement area 41 and the light emitting chip 20 disposed in the crystal placement area 41 are both located in the through hole 71, and the solderable layer 60 is connected to the surface of the insulating layer 70 facing away from the circuit layer 40 and close to the edge of the through hole 71. It can ensure that the light emitting chip 20 can be conducted through the circuit layer 40, while the solderable layer 60 and the circuit layer 40 are insulated.

[0048] Optionally, an insulating layer 70 is provided on the circuit layer 40 where the light emitting chip 20 needs to be installed, and the insulating layer 70 does not cover the aforementioned solder joints 43 to ensure normal power supply of the circuit layer 40. Furthermore, through holes 71 are provided in an array on the insulating layer 70, and one through hole 71 corresponds to one light emitting chip 20 and the lens 30. One light emitting chip 20 is installed in one through hole 71, and the light emitting chip 20 can be located in the middle of the through hole 71. The light emitting chip 20 does not contact the insulating layer 70, so that the light emitting chip 20 does not contact the solderable layer 60, and the light emitting chip 20 is prevented from short-circuiting.

[0049] In this embodiment, one side of the lens 30 has an opening, and the edge of the opening side of the lens 30 is plated with a solderable layer 60, which is connected to the insulating layer 70, so that the light emitting chip 20 and the die placement area 41 are located inside the lens 30. Figure 5 As shown, the opening side of the lens 30 faces downward, the outer surface of the lens 30 is a hemispherical surface, convex upward, and the inner surface of the lens 30 is also a spherical surface, concave upward, so that there is a certain space inside the lens 30, which can be used to set the light-emitting chip 20.

[0050] The solderable layer 60 is a circular ring structure, and the width of the solderable layer 60 (wherein the width of the solderable layer 60 refers to the difference between the outer ring radius and the inner ring radius of the circular ring solderable layer 60) is 1.5-2.5 mm. Optionally, the width of the solderable layer 60 is consistent with the thickness of the lens 30 (the distance between the inner surface and the outer surface of the lens 30), for example: the width of the solderable layer 60 is 1.5 mm, 2 mm or 2.5 mm. In other embodiments, the width of the solderable layer 60 may also be less than the thickness of the lens 30, and the outer ring of the solderable layer 60 does not exceed the outer surface of the lens 30; or the inner ring of the solderable layer 60 does not exceed the inner surface of the lens 30. Optionally, the solderable layer 60 is plated on the middle of the lower end surface of the lens 30.

[0051] The thickness of the solderable layer 60 (wherein the thickness of the solderable layer 60 refers to Figure 5 The height difference between the upper surface and the lower surface of the solderable layer 60 is 0.15-0.25 mm. For example, the thickness of the solderable layer 60 is 0.15 mm, 0.2 mm or 0.25 mm.

[0052] In other embodiments, if the thickness of the light emitting chip 20 is relatively thin and does not protrude from the solderable layer 60, the lens 30 may also be a solid structure, as long as it does not affect the installation of the light emitting chip 20. In this embodiment, the light emitting chip 20 is installed in the middle of the through hole 71, that is, in the middle of the hollow part of the circular ring structure formed by the solderable layer 60. After the light generated by the light emitting chip 20 is refracted by the spherical surface, it can emit substantially parallel light for use.

[0053] In order to make the connection strength between the lens 30 and the insulating layer 70 higher and the packaging effect better, the solderable layer 60 may include a first solderable layer 61 and a second solderable layer 62, wherein the first solderable layer 61 is arranged at the edge of one side of the opening of the lens 30 and protrudes from the lens 30 toward the direction of the second solderable layer 62, and the second solderable layer 62 is arranged on the insulating layer 70 and protrudes from the insulating layer 70 toward the direction of the first solderable layer 61, and the first solderable layer 61 and the second solderable layer 62 are welded.

[0054] Optionally, the first solderable layer 61 protrudes downward from the lens 30, the outer edge of the first solderable layer 61 is flush with the outer surface of the lens 30, and the inner edge of the first solderable layer 61 is flush with the inner surface of the lens 30. The second solderable layer 62 protrudes upward from the insulating layer 70, the inner edge of the second solderable layer 62 is flush with the hole wall of the through hole 71 on the insulating layer 70, and the width of the second solderable layer 62 is consistent with the width of the first solderable layer 61, and then the first solderable layer 61 and the second solderable layer 62 are welded by welding.

[0055] Figure 6 Please refer to the preparation flow chart of the light emitting diode packaging structure provided in this embodiment. Figure 1 and Figure 6The method for preparing the light emitting diode packaging structure provided in this embodiment comprises the following steps:

[0056] S10, obtaining a lens 30 having an annular first solderable layer 61. Optionally, the lens 30 is fired first, and then the annular first solderable layer 61 is formed on the end surface of the lens 30 having the opening by electroplating or magnetron sputtering.

[0057] S20 , forming the insulating plate 12 on the metal plate 11 .

[0058] S30, forming a plurality of spaced circuit regions 42 on the surface of the insulating plate 12 facing away from the metal plate 11. Optionally, the plurality of spaced circuit regions 42 may be formed by electroplating or selective plating; or a circuit layer 40 may be formed first, and then the plurality of spaced circuit regions 42 may be formed by etching.

[0059] S40, forming an insulating layer 70 having a plurality of through holes 71 on the circuit area 42, wherein the plurality of through holes 71 are arranged in an array, and the gap between two adjacent circuit areas 42 substantially evenly divides the through holes 71. Optionally, the insulating layer 70 is first formed on the circuit layer 40, and then a plurality of through holes 71 arranged in an array are formed on the insulating layer 70 by etching or machining.

[0060] S50, forming an annular second solderable layer 62 at a position of the insulating layer 70 near the through hole 71. Optionally, a plurality of second solderable layers 62 may be formed by electroplating selective plating process; a layer of solderable layer may be formed first, and then a plurality of second solderable layers 62 may be formed by etching; the second solderable layer 62 may be formed by screen printing solderable metal glue; or the second solderable layer 62 may be formed by magnetron sputtering.

[0061] S60 , placing the light emitting chip 20 in the crystal placement area 41 of the circuit layer 40 , with one light emitting chip 20 being placed in one crystal placement area 41 . The crystal placement area 41 is arranged between two adjacent circuit areas 42 .

[0062] S70 , electrically connecting the light emitting chip 20 to the circuit area 42 by reflow soldering, so that the light emitting chip 20 can contact and conduct with two adjacent circuit areas 42 .

[0063] S80, reflow soldering to mount the lens 30 to form a light emitting diode package structure. Optionally, the first solderable layer 61 obtained in step S10 and the second solderable layer 62 obtained in step S50 are soldered by reflow soldering to form a light emitting diode package structure.

[0064] In this embodiment, in the above-mentioned light emitting diode packaging structure, the light emitting chip 20 may be an ultraviolet light emitting chip or other light emitting chips, as long as the emitted light can pass through the lens 30 .

[0065] The beneficial effects of the LED packaging structure provided by the embodiment of the present application include: the use of a completely glue-free structure for packaging can avoid the yellowing and cracking of the organic glue in the LED packaging structure when working for a long time, thereby improving the light attenuation and device failure of the LED packaging structure. The device stability and reliability of the LED packaging structure can be improved. It can be used for sterilization and is widely used in the fields of medical treatment, photocuring printing, etc.

[0066] The above is only a part of the embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A light emitting diode packaging structure, characterized in that: include: A substrate, wherein a circuit layer is disposed on the substrate, and a crystal placement area is disposed on the circuit layer; A light-emitting chip, which is disposed in the chip placement area and is electrically connected to the circuit layer; A lens, the lens covers the light-emitting chip and the chip-placing area, an annular solderable layer is provided at the edge of the lens, and the solderable layer is insulated and connected to the circuit layer; An insulating layer is also provided, the insulating layer is located between the circuit layer and the solderable layer, and a through hole is also provided on the insulating layer, so that the light-emitting chip and the die-placement area are exposed within the coverage of the lens; One side of the lens has an opening, an edge of one side of the opening is plated with a solderable layer, and the solderable layer is connected to the insulating layer; The light-emitting chip is an ultraviolet light-emitting chip, and the crystal placement area, the ultraviolet light-emitting chip and the lens each include a plurality of them and are arranged in an array; The ultraviolet light-emitting chip and the crystal placement area are arranged in one-to-one correspondence, one lens covers one crystal placement area and the ultraviolet light-emitting chip mounted on the crystal placement area, a solderable layer is arranged at the edge of each lens, the through holes are arranged in an array on the insulating layer, one through hole corresponds to one ultraviolet light-emitting chip and the lens, the ultraviolet light-emitting chip does not contact the insulating layer, and the solderable layer is connected to the insulating layer; The circuit layer includes a plurality of circuit areas spaced side by side, the chip placement area is arranged between two adjacent circuit areas, and the ultraviolet light emitting chip mounted on the chip placement area is configured to be electrically connected to the two adjacent circuit areas.

2. The light emitting diode packaging structure according to claim 1, characterized in that: The solderable layer includes one of a gold solderable layer, a silver solderable layer, a tin solderable layer, and an alloy solderable layer thereof.

3. The light emitting diode packaging structure according to claim 2, characterized in that: The solderable layer is a circular ring structure, the width of the solderable layer is 1.5-2.5 mm, and the thickness of the solderable layer is 0.15-0.25 mm.

4. The light emitting diode packaging structure according to claim 1, characterized in that: The lens is a glass lens or a ceramic lens.

5. The light emitting diode packaging structure according to claim 1, characterized in that: The substrate comprises a metal plate and an insulating plate arranged on the metal plate, and the circuit layer is arranged on the insulating plate.

6. The light emitting diode packaging structure according to claim 5, characterized in that: The metal plate is an aluminum plate or a copper plate.

7. A method for preparing the light emitting diode package structure according to claim 1, characterized in that: The steps include: forming a first annular solderable layer at the edge of the lens; A circuit layer is formed on the substrate, and a crystal placement area is correspondingly arranged on the circuit layer; forming an insulating layer on the circuit layer, and forming a through hole on the insulating layer to expose the die placement area; Forming a second annular solderable layer on the insulating layer near the edge of the through hole; Soldering the light-emitting chip to the chip placement area, and electrically connecting the light-emitting chip to the circuit layer; The lens is covered on the light emitting chip and the die placement area, so that the first solderable layer and the second solderable layer are soldered.

Images