Low noise amplifier and RF receiver

Abstract

The present invention is applicable to the field of wireless communication technology, and provides a low noise amplifier and a radio frequency receiver, wherein the amplifier comprises: a radio frequency amplification module, a bypass switch module, a first switch module and a control module; the first switch module, the first end of which is connected to the input terminal of the low noise amplifier, the second end of which is connected to the input terminal of the radio frequency amplification module, and the control end of which is connected to the control module; the output end of the radio frequency amplification module is connected to the output terminal of the low noise amplifier; the bypass switch module, the first end of which is connected to the input terminal, the second end of which is connected to the output terminal, and the control end of which is connected to the control module; the control module is used to receive an external control signal, and control the on and off of the first switch module and the bypass switch module according to the external control signal. By controlling the conduction of the path where the radio frequency amplification module is located or the path where the bypass switch module is located, different paths are selected for different signal strengths, so that the gain of the low noise amplifier is adjustable, and the reliability of the radio frequency signal is ensured.

Description

Technical Field

[0001] The present invention belongs to the technical field of wireless communications, and in particular relates to a low noise amplifier and a radio frequency receiver. Background Art

[0002] Mobile communication technology is the product of the high development and combination of modern communication technology and computer technology. Low noise amplifier is a part of wireless transceiver and can be used in the receiver or transmitter of wireless transceiver.

[0003] When the signal is weak, the signal needs to be amplified as much as possible, and the gain of the low-noise amplifier needs to be large; when the signal is strong, too high a gain will cause channel saturation, thus affecting the integrity of the signal. Therefore, in order to ensure the reliability of the signal, the gain of the low-noise amplifier should have an adjustable function for different signal strengths. However, the gain of the low-noise amplifier in the prior art is not adjustable, which affects the reliability of the signal. Summary of the invention

[0004] In view of this, the embodiments of the present invention provide a low noise amplifier and a radio frequency receiver to solve the problem in the prior art that the gain of the low noise amplifier is not adjustable, which affects the signal reliability.

[0005] A first aspect of an embodiment of the present invention provides a low noise amplifier, including: a radio frequency amplification module, a bypass switch module, a first switch module and a control module;

[0006] A first switch module, wherein a first end is connected to an input terminal of the low noise amplifier, a second end is connected to an input terminal of the radio frequency amplification module, and a control end is connected to the control module; an output terminal of the radio frequency amplification module is connected to an output terminal of the low noise amplifier;

[0007] A bypass switch module, a first end connected to the input terminal, a second end connected to the output terminal, and a control end connected to the control module;

[0008] The control module is used to receive an external control signal and control the on and off of the first switch module and the bypass switch module according to the external control signal.

[0009] A second aspect of the embodiments of the present invention provides a radio frequency receiver, including the low noise amplifier provided by the first aspect of the embodiments of the present invention.

[0010] An embodiment of the present invention provides a low-noise amplifier, including: a radio frequency amplification module, a bypass switch module, a first switch module and a control module; the first switch module, the first end of which is connected to the input terminal of the low-noise amplifier, the second end of which is connected to the input terminal of the radio frequency amplification module, and the control end of which is connected to the control module; the output end of the radio frequency amplification module is connected to the output terminal of the low-noise amplifier; the bypass switch module, the first end of which is connected to the input terminal, the second end of which is connected to the output terminal, and the control end of which is connected to the control module; the control module is used to receive an external control signal and control the on and off of the first switch module and the bypass switch module according to the external control signal. When the RF signal strength is relatively low, the path where the RF amplification module is located is enabled, the path where the bypass switch module is located is disconnected, and the RF signal is output after being amplified by the amplification module; when the RF signal is relatively strong, the path where the bypass switch module is located is enabled, the path where the RF amplification module is located is closed, and the RF signal is directly output without amplification to prevent channel saturation and affect signal integrity; by controlling the conduction of the path where the RF amplification module is located or the path where the bypass switch module is located, different paths are selected for different signal strengths, so that the gain of the low-noise amplifier is adjustable, ensuring that the signal is optimally processed under different conditions, thereby ensuring the reliability of the RF signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0012] Figure 1 is a structural schematic diagram of a low noise amplifier provided by an embodiment of the present invention;

[0013] Figure 2 is a structural schematic diagram of another low noise amplifier provided by an embodiment of the present invention;

[0014] Figure 3 is a circuit schematic diagram of a low noise amplifier provided by an embodiment of the present invention;

[0015] Figure 4 is a circuit schematic diagram of a bypass switch module with a stacking structure provided by an embodiment of the present invention;

[0016] Figure 5 is a circuit schematic diagram of a control module provided by an embodiment of the present invention;

[0017] Figure 6 is a circuit schematic diagram of a NOT gate provided by an embodiment of the present invention;

[0018] Figure 7 It is a circuit schematic diagram of a NOR gate provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0019] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present invention. However, it should be clear to those skilled in the art that the present invention may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present invention.

[0020] In order to illustrate the technical solution of the present invention, specific embodiments are provided below for illustration.

[0021] refer to Figure 1 , an embodiment of the present invention provides a low noise amplifier, comprising: a radio frequency amplification module 11, a bypass switch module 12, a first switch module 13 and a control module 14;

[0022] A first switch module 13, a first end of which is connected to the input terminal of the low noise amplifier, a second end of which is connected to the input terminal of the radio frequency amplification module 11, and a control end of which is connected to the control module 14; an output end of the radio frequency amplification module 11 is connected to an output terminal of the low noise amplifier;

[0023] A bypass switch module 12, a first end connected to the input terminal, a second end connected to the output terminal, and a control end connected to the control module 14;

[0024] The control module 14 is used to receive an external control signal and control the on and off of the first switch module 13 and the bypass switch module 12 according to the external control signal.

[0025] The embodiment of the present invention controls the on and off of the first switch module 13 and the bypass switch module 12 according to the external control signal, thereby controlling the conduction state of the path where the RF amplification module 11 is located and the conduction state of the path where the bypass switch module 12 is located. When the RF signal strength is relatively low, the path where the RF amplification module 11 is located is enabled, the path where the bypass switch module 12 is located is disconnected, the RF signal is amplified by the RF amplification module 11 and then output, and the low-noise amplifier works in the amplification mode; when the RF signal is relatively strong, the path where the bypass switch module 12 is located is enabled, the path where the RF amplification module 11 is located is closed, the RF signal is directly output without amplification, and the low-noise amplifier works in the bypass mode to prevent channel saturation and affect the integrity of the signal; the working mode of the low-noise amplifier is controlled according to different signal strengths, so that the gain of the low-noise amplifier is adjustable, ensuring that the signal is optimally processed under different conditions, and ensuring the reliability of the RF signal.

[0026] refer to Figure 2, In some embodiments, the control end of the first switch module 13 is connected to the third output end of the control module 14; The low noise amplifier further includes: a second switch module 15;

[0027] A second switch module 15, a first end of which is connected to the output end of the RF amplification module 11, a second end of which is connected to the output terminal, and a control end of which is connected to the fifth output end of the control module 14; or

[0028] The second switch module 15 has a first end connected to the output end of the RF amplification module 11 , a second end connected to the output terminal, and a control end connected to the third output end of the control module 14 .

[0029] When the low noise amplifier operates in the bypass mode, the first switch module 13 is disconnected, and the input terminal is disconnected from the RF amplification module 11, presenting a high impedance, which does not affect the linearity, insertion loss, standing wave and other characteristics in the bypass state.

[0030] Since the impedance of the RF amplification module 11 is not infinite in the cold state, the standing wave ratio of the output RF signal when the low noise amplifier is in the bypass state will be affected by the RF amplification module 11. The embodiment of the present invention further provides a second switch module 15. When the second switch module 15 is disconnected, the RF amplification module 11 is disconnected from the output terminal, and also presents a high impedance, so that the output standing wave in the bypass state is not affected by the RF amplification module 11. The first switch module 13 and the second switch module 15 work together to prevent the RF signal from entering the RF amplification module 11, causing additional signal loss and deterioration of the standing wave ratio, thereby improving the off isolation.

[0031] In some embodiments, reference Figure 3 , the first switch module 13 includes: a second switch tube E4, a seventh resistor R8, and an eighth resistor R7;

[0032] The second switch tube E4 has a first end connected to the first end of the first switch module 13 and the first end of the seventh resistor R8, a second end connected to the second end of the first switch module 13 and the second end of the seventh resistor R8, and a control end connected to the control end of the first switch module 13 through the eighth resistor R7.

[0033] The seventh resistor R8 has a relatively large resistance and is used to balance the potential.

[0034] In some embodiments, the second switch tube E4 may be a gallium arsenide D-PHEMT tube (gallium arsenide depletion-mode pseudo-high electron mobility transistor).

[0035] In some embodiments, the circuit structure of the second switch module 15 and the first switch module 13 may be the same. Figure 3 , I will not go into details here.

[0036] In some embodiments, reference Figure 3 The control end of the bypass switch module 12 includes: a first bypass control end and a second bypass control end, the first bypass control end is connected to the first output end of the control module 14, and the second bypass control end is connected to the second output end of the control module 14; the bypass switch module 12 includes: a first switch unit 121, a second switch unit 122, a third switch unit 123, a first capacitor C8 and a second capacitor C9;

[0037] The first switch unit 121 has a first end connected to the first end of the first capacitor C8, a second end connected to the first end of the second switch unit 122 and the second end of the third switch unit 123, and a control end connected to the control end of the second switch unit 122 and the first bypass control end;

[0038] A second end of the second switch unit 122 is connected to a second end of the bypass switch module 12;

[0039] A third switch unit 123, a first end of which is connected to the first end of the second capacitor C9, and a control end of which is connected to the second bypass control end;

[0040] The second end of the first capacitor C8 is connected to the first end of the bypass switch module 12, and the second end of the second capacitor C9 is grounded.

[0041] In some embodiments, the first switch unit 121 includes: a first switch tube E5, a first resistor R10 and a second resistor R9;

[0042] The first switch tube E5 has a first end connected to the first end of the first switch unit 121 and the first end of the first resistor R10, a second end connected to the second end of the first switch unit 121 and the second end of the first resistor R10, and a control end connected to the control end of the first switch unit 121 through the second resistor R9.

[0043] In some embodiments, the first switch tube E5 is a gallium arsenide D-PHEMT tube;

[0044] The circuit structures of the first switch unit 121, the second switch unit 122 and the third switch unit 123 may be the same. Figure 3 , I will not go into details here.

[0045] In the embodiment of the present invention, the switch tubes in the first switch unit 121, the second switch unit 122 and the third switch unit 123 can all adopt gallium arsenide D-PHEMT tubes. The three switch units form a T-type switch structure, which increases the turn-off isolation and ensures that the bypass switch module 12 does not affect the operation of the RF amplification module 11 when it is in the disconnected state.

[0046] In some embodiments, the bypass switch module 12 may also adopt a stacking structure. Figure 4 . The maximum linear pass rate of the bypass switch module 12 is directly related to the breakdown voltage of the switch tube. The higher the breakdown voltage, the greater the pass power. In the embodiment of the present invention, the maximum linear pass power of the bypass switch module 12 is increased by stacking the same switch units. However, since the insertion loss will increase exponentially with the increase in the number of stacks, it is necessary to find a balance between the linear pass power and the insertion loss. For example, the bypass switch module 12 can be composed of 2 first switch units, 2 second switch units and 4 third switch units stacked together.

[0047] In some embodiments, the switch tubes in the first switch unit 121, the second switch unit 122 and the third switch unit 123 can all adopt multi-gate D-PHEMT tubes. The multi-gate structure can also be used to increase the maximum linear pass power of the bypass switch module 12. At the same time, the multi-gate D-PHEMT tube can reduce the chip area and miniaturize the integrated circuit.

[0048] In some embodiments, reference Figure 3 , the radio frequency amplification module 11 may further include: an enabling unit 111;

[0049] The input terminal of the enabling unit 111 is connected to the fourth output terminal of the control module 14;

[0050] The enabling unit 111 is used to receive the enabling control instruction sent by the control module 14 and perform enabling control on the RF amplifying module 11 according to the enabling control instruction.

[0051] In some embodiments, reference Figure 3 , the enabling unit 111 includes: a third field effect transistor E3, a third capacitor C6, a ninth resistor R6 and a tenth resistor R5;

[0052] A third field effect transistor E3, a first end of which is grounded, a second end of which is connected to the output end of the enabling unit 111, a control end of which is connected to the input end of the enabling unit 111 via a ninth resistor R6, a control end of which is grounded via a tenth resistor R5, and a control end of which is also connected to a first end of a third capacitor C6;

[0053] A second terminal of the third capacitor C6 is grounded;

[0054] The radio frequency amplification module 11 further includes: a bias unit, a fourth field effect transistor E1, a fifth field effect transistor E2, a first inductor L1, a second inductor L2, a third inductor L3, a fourth capacitor C7, a fifth capacitor C1, a sixth capacitor C3, a seventh capacitor C2, an eighth capacitor C5, a ninth capacitor C4, a tenth capacitor C10, an eleventh resistor R2, a twelfth resistor R1, a thirteenth resistor R3 and a fourteenth resistor R4;

[0055] a fourth field effect transistor E1, a first end of which is respectively connected to the first end of the second inductor L2 and the first end of the sixth capacitor C3, a second end of which is respectively connected to the first end of the thirteenth resistor R3, the first end of the fifth capacitor C1 and the second end of the third inductor L3, and a control end of which is respectively connected to the first end of the seventh capacitor C2, the first end of the eighth capacitor C5, the first end of the fourteenth resistor R4, the second end of the thirteenth resistor R3 and the output end of the enabling unit;

[0056] a fifth field effect transistor E2, having a first end connected to the ground through the first inductor L1, a second end connected to the first end of the ninth capacitor C4, the second end of the seventh capacitor C2 and the second end of the second inductor L2, and a control end connected to the second end of the twelfth resistor R1 and the second end of the fourth capacitor C7;

[0057] A first end of the third inductor L3 is connected to the power supply terminal VCC; a tenth capacitor C10, a first end of which is connected to the power supply terminal VCC, and a second end of which is connected to the output terminal of the RF amplification module 11;

[0058] an eleventh resistor R2, a first end of which is connected to the bias unit, and a second end of which is respectively connected to the second end of the fifth capacitor C1 and the first end of the twelfth resistor R1;

[0059] The first end of the fourth capacitor C7 is connected to the input end of the RF amplification module 11; the second end of the ninth capacitor C4, the second end of the eighth capacitor C5, the second end of the sixth capacitor C3, and the second end of the fourteenth resistor R4 are all grounded.

[0060] The RF amplifier module 11 adopts a common source and common gate structure, the fifth field effect transistor E2 is a first-stage common source amplifier stage, and the fourth field effect transistor E1 is a second-stage common gate amplifier stage. When the RF amplifier module 11 is working, the fifth field effect transistor E2 and the fourth field effect transistor E1 share a bias current, and the gain is mainly provided by the fifth field effect transistor E2. The fourth field effect transistor E1 can suppress the Miller effect caused by the parasitic gate-drain capacitance of the fifth field effect transistor E2, thereby improving the reverse isolation of the circuit. An eighth capacitor C5 is arranged between the gate and the ground of the fourth field effect transistor E1, which is used to adjust the phase response curve of the common gate amplifier circuit and improve the overall linearity of the low noise amplifier. The seventh capacitor C2 is a two-stage RF coupling capacitor, the sixth capacitor C3 is a source bypass capacitor of the fourth field effect transistor E1, the ninth capacitor C4 is a drain matching capacitor of the fifth field effect transistor E2, and the second inductor L2 is a matching inductor between the two stages. The fifth capacitor C1 and the twelfth resistor R1 form a feedback unit, which is used to provide feedback for the fifth field effect transistor E2 and improve the stability of the circuit. The thirteenth resistor R3 and the fourteenth resistor R4 are connected in series between the power supply terminal VCC and the ground, and provide a bias voltage for the gate of the fourth field effect transistor E1 through voltage division.

[0061] In some embodiments, the third field effect transistor E3, the fourth field effect transistor E1 and the fifth field effect transistor E2 can all be gallium arsenide E-PHEMT tubes. Gallium arsenide E-PHEMT tubes (gallium arsenide enhanced pseudo-high electron mobility transistors) have the characteristics of low noise, high gain and good linearity, which can effectively reduce the noise of the amplifier and improve the gain and linearity of the RF amplification module 11.

[0062] In the enabling unit 111, the tenth resistor R5 is a pull-down resistor. When there is no signal input to the input end of the enabling unit 111, the input end voltage of the enabling unit 111 is pulled down through the tenth resistor R5; when a high-level signal is input to the input end of the enabling unit 111, the tenth resistor R5 is used to prevent the input high-level signal from interfering with the RF amplification module 11, causing the RF amplification module 11 to malfunction and affect the output of the RF signal.

[0063] In the embodiment of the present invention, each of the above-mentioned switch tubes can adopt a gallium arsenide D-PHEMT tube. By changing the potential difference between the gate and the source, and between the gate and the drain of the gallium arsenide D-PHEMT tube, the source and the drain are in a low resistance state or a high resistance state, thereby controlling the on and off of the path. When the gallium arsenide D-PHEMT tube is turned on, the potential difference Vgs between the gate and the source, and between the gate and the drain is ≥0V; when the gallium arsenide D-PHEMT tube is turned off, the potential difference Vgs between the gate and the source, and between the gate and the drain is ≤-0.4V. In the embodiment of the present invention, a channel level floating technology is adopted. When the gallium arsenide D-PHEMT tube needs to be turned off, the channel of the gallium arsenide D-PHEMT tube is in a high level state, and the gate is connected to the zero level; when the gallium arsenide D-PHEMT tube needs to be turned on, the gate of the gallium arsenide D-PHEMT tube is in a high level state, and a channel level is automatically generated through the turn-on threshold of the switch tube. In the embodiment of the present invention, there is no need to provide a negative voltage power supply to control the on and off of the switch tube, thereby simplifying the circuit design.

[0064] In some embodiments, reference Figure 5 , the fifth output terminal of the control module 14 is connected to the second output terminal of the control module 14; the control module 14 includes: a first NOT gate U1, a second NOT gate U2, a third NOT gate U3, a fourth NOT gate U4, a NOR gate U5, a third resistor R17, a fourth resistor R18, a fifth resistor R19 and a sixth resistor R20;

[0065] A first NOT gate U1, whose input end is connected to the first input end of the control module 14 through a third resistor R17, whose input end is also grounded through a fourth resistor R18, and whose output end is connected to the input end of the second NOT gate U2;

[0066] The output end of the second NOT gate U2 is connected to the first output end of the control module 14 and the input end of the third NOT gate U3 respectively;

[0067] The output end of the third NOT gate U3 is connected to the second output end of the control module 14;

[0068] A NOR gate U5, having a first input terminal connected to the input terminal of the first NOT gate U1, a second input terminal connected to the second input terminal of the control module 14 via a fifth resistor R19, a second input terminal further grounded via a sixth resistor R20, and an output terminal respectively connected to the third output terminal of the control module 14 and the input terminal of the fourth NOT gate U4;

[0069] An output terminal of the fourth NOT gate U4 is connected to a fourth output terminal of the control module 14 .

[0070] The control module 14 adopts a logic gate control circuit, and the third resistor R17, the fourth resistor R18, the fifth resistor R19 and the sixth resistor R20 are used for voltage division to generate an input level. The logic gate control circuit is composed of a plurality of NOT gates and NOR gates, has a fast flipping speed, a small size, and the threshold voltage is less affected by the power supply voltage. The control module 14 includes two input terminals, and the signal received by the first input terminal of the control module 14 and the signal received by the second input terminal of the control module 14 control the working state of the low noise amplifier after passing through the logic gate circuit.

[0071] In some embodiments, reference Figure 6 , the first NOT gate U1 may include: a fifteenth resistor R21, a sixth switch tube E9 and a seventh field effect transistor E10;

[0072] A sixth switch tube E9, a first end of which is connected to the power supply terminal VCC, and a second end of which is respectively connected to the output end of the first NOT gate U1, the first end of the seventh field effect transistor E10 and the control end of the sixth switch tube E9 through a fifteenth resistor R21;

[0073] The seventh field effect transistor E10 has a second terminal connected to the ground, and a control terminal connected to the input terminal of the first NOT gate U1.

[0074] In some embodiments, the sixth switch transistor E9 is a gallium arsenide D-PHEMT transistor, and the seventh field effect transistor E10 is a gallium arsenide E-PHEMT transistor.

[0075] In some embodiments, the first NOT gate U1 , the second NOT gate U2 , the third NOT gate U3 , and the fourth NOT gate U4 have the same circuit structure.

[0076] In some embodiments, reference Figure 7 , the NOR gate U5 may include: an eighth field effect transistor E12, a ninth field effect transistor E13, a tenth switch tube E11 and a sixteenth resistor R22;

[0077] A tenth switch tube E11, a first end of which is connected to the power supply terminal VCC, and a second end of which is respectively connected to the control end of the tenth switch tube E11, the output end of the NOR gate U5, the first end of the eighth field effect transistor E12, and the first end of the ninth field effect transistor E13 through a sixteenth resistor R22;

[0078] The control end of the eighth field effect transistor E12 is connected to the first input end of the NOR gate U5, and the control end of the ninth field effect transistor E13 is connected to the second input end of the NOR gate U5;

[0079] The second end of the eighth field effect transistor E12 and the second end of the ninth field effect transistor E13 are both grounded.

[0080] In some embodiments, the eighth field effect transistor E12 and the ninth field effect transistor E13 are gallium arsenide E-PHEMT tubes, and the tenth switch tube E11 is a gallium arsenide D-PHEMT tube.

[0081] The circuits of the above modules can be realized by E / D-PHEMT process, and all modules can be integrated on a single chip, which is convenient for integration and miniaturization.

[0082] refer to Figure 3 and Figure 5 , the above-mentioned low noise amplifier is described below in conjunction with specific embodiments.

[0083] Table 1 Control signal truth table

[0084] VBYP 0 0 1 1 VSD 1 0 1 0 VC1P 0 0 1 1 VC1N 1 1 0 0 VC2N 0 1 0 0 VC2P 1 0 1 1 Shutdown enlarge bypass bypass

[0085] Referring to Table 1, "0" represents a low level state and "1" represents a high level state.

[0086] When the first input terminal VBYP of the control module 14 inputs a low level (0), and the second input terminal VSD of the control module 14 inputs a high level (1), the output terminal signals of the control module 14 are 0101, the first switch module 13 is disconnected, the second switch module 15 is turned on, the bypass switch module 12 is disconnected, the RF amplification module 11 is enabled and turned off, and the low noise amplifier is in the off state;

[0087] When the first input terminal VBYP of the control module 14 inputs a low level (0), and the second input terminal VSD of the control module 14 inputs a low level (0), the signals of the various output terminals of the control module 14 are 0110, the first switch module 13 is turned on, the second switch module 15 is turned on, the bypass switch module 12 is turned off, the RF amplification module 11 can work normally, and the low noise amplifier is in the amplification mode;

[0088] When the first input terminal VBYP of the control module 14 inputs a high level (1), and the second input terminal VSD of the control module 14 inputs a high level (1) or a low level (0), the signals of the various output terminals of the control module 14 are 1001, the first switch module 13 is disconnected, the second switch module 15 is disconnected, the bypass switch module 12 is turned on, the RF amplification module 11 is enabled and turned off, and the low noise amplifier is in bypass mode;

[0089] The first input terminal VBYP of the control module 14 is a bypass control terminal. When a high level is input to the first input terminal VBYP of the control module 14, the low noise amplifier is in a bypass mode.

[0090] The embodiment of the present invention can realize the switching of the low noise amplifier between different working modes by only two control signals, so that the gain of the low noise amplifier is adjustable, and different working modes are selected according to different radio frequency signals, thereby ensuring the quality of the radio frequency signal.

[0091] Corresponding to any of the above-mentioned low noise amplifiers, an embodiment of the present invention further provides a radio frequency receiver, which includes any of the above-mentioned low noise amplifiers and has the advantages of the above-mentioned low noise amplifiers, which will not be described in detail here.

[0092] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A low noise amplifier, characterized in that: include: A radio frequency amplification module, a bypass switch module, a first switch module and a control module; The first switch module has a first end connected to the input terminal of the low noise amplifier, a second end connected to the input terminal of the radio frequency amplification module, and a control end connected to the control module; the output end of the radio frequency amplification module is connected to the output terminal of the low noise amplifier; The bypass switch module has a first end connected to the input terminal, a second end connected to the output terminal, and a control end connected to the control module; The control module is used to receive an external control signal and control the on and off of the first switch module and the bypass switch module according to the external control signal; The control end of the bypass switch module includes: a first bypass control end and a second bypass control end; the first output end of the control module is connected to the first bypass control end, the second output end of the control module is connected to the second bypass control end, the third output end of the control module is connected to the control end of the first switch module, the fourth output end of the control module is connected to the RF amplification module, and the fifth output end of the control module is connected to the second output end of the control module; The control module includes: a first NOT gate, a second NOT gate, a third NOT gate, a fourth NOT gate, a NOR gate, a third resistor, a fourth resistor, a fifth resistor and a sixth resistor; The first NOT gate has an input end connected to the first input end of the control module through the third resistor, an input end connected to the ground through the fourth resistor, and an output end connected to the input end of the second NOT gate; The output end of the second NOT gate is connected to the first output end of the control module and the input end of the third NOT gate respectively; The output end of the third NOT gate is connected to the second output end of the control module; The NOR gate has a first input end connected to the input end of the first NOT gate, a second input end connected to the second input end of the control module through the fifth resistor, the second input end is also grounded through the sixth resistor, and an output end is respectively connected to the third output end of the control module and the input end of the fourth NOT gate; The output end of the fourth NOT gate is connected to the fourth output end of the control module.

2. The low noise amplifier according to claim 1, characterized in that The low noise amplifier further comprises: a second switch module; The second switch module has a first end connected to the output end of the radio frequency amplification module, a second end connected to the output terminal, and a control end connected to the fifth output end of the control module; or The second switch module has a first end connected to the output end of the radio frequency amplification module, a second end connected to the output terminal, and a control end connected to the third output end of the control module.

3. The low noise amplifier according to claim 1, wherein: The first switch module includes: a second switch tube, a seventh resistor, and an eighth resistor; The second switch tube has a first end connected to the first end of the first switch module and the first end of the seventh resistor, a second end connected to the second end of the first switch module and the second end of the seventh resistor, and a control end connected to the control end of the first switch module through the eighth resistor.

4. The low noise amplifier according to claim 1, wherein: The bypass switch module includes: a first switch unit, a second switch unit, a third switch unit, a first capacitor and a second capacitor; The first switch unit has a first end connected to the first end of the first capacitor, a second end connected to the first end of the second switch unit and the second end of the third switch unit, and a control end connected to the control end of the second switch unit and the first bypass control end; The second end of the second switch unit is connected to the second end of the bypass switch module; The third switch unit has a first end connected to the first end of the second capacitor, and a control end connected to the second bypass control end; The second end of the first capacitor is connected to the first end of the bypass switch module, and the second end of the second capacitor is grounded.

5. The low noise amplifier according to claim 4, characterized in that The circuit structures of the first switch unit, the second switch unit and the third switch unit are the same; the first switch unit includes: a first switch tube, a first resistor and a second resistor; The first switch tube has a first end connected to the first end of the first switch unit and the first end of the first resistor respectively, a second end connected to the second end of the first switch unit and the second end of the first resistor respectively, and a control end connected to the control end of the first switch unit through the second resistor.

6. The low noise amplifier according to claim 5, characterized in that The first switch tube is a gallium arsenide D-PHEMT tube.

7. The low noise amplifier according to claim 1, wherein: The radio frequency amplification module comprises: an enabling unit; The input end of the enabling unit is connected to the fourth output end of the control module; The enabling unit is used to receive the enabling control instruction sent by the control module, and perform enabling control on the radio frequency amplification module according to the enabling control instruction.

8. The low noise amplifier according to claim 7, characterized in that The enabling unit includes: a third field effect transistor, a third capacitor, a ninth resistor and a tenth resistor; The third field effect transistor has a first end connected to the ground, a second end connected to the output end of the enabling unit, a control end connected to the input end of the enabling unit through the ninth resistor, a control end connected to the ground through the tenth resistor, and a control end connected to the first end of the third capacitor; The second end of the third capacitor is grounded; The radio frequency amplification module further includes: a bias unit, a fourth field effect transistor, a fifth field effect transistor, a first inductor, a second inductor, a third inductor, a fourth capacitor, a fifth capacitor, a sixth capacitor, a seventh capacitor, an eighth capacitor, a ninth capacitor, a tenth capacitor, an eleventh resistor, a twelfth resistor, a thirteenth resistor and a fourteenth resistor; the fourth field effect transistor, a first end of which is respectively connected to the first end of the second inductor and the first end of the sixth capacitor, a second end of which is respectively connected to the first end of the thirteenth resistor, the first end of the fifth capacitor and the second end of the third inductor, and a control end of which is respectively connected to the first end of the seventh capacitor, the first end of the eighth capacitor, the first end of the fourteenth resistor, the second end of the thirteenth resistor and the output end of the enabling unit; The fifth field effect transistor has a first end connected to the ground through the first inductor, a second end connected to the first end of the ninth capacitor, the second end of the seventh capacitor and the second end of the second inductor respectively, and a control end connected to the second end of the twelfth resistor and the second end of the fourth capacitor respectively; The first end of the third inductor is connected to the power supply end; the first end of the tenth capacitor is connected to the power supply end, and the second end is connected to the output end of the RF amplification module; The eleventh resistor has a first end connected to the bias unit, and a second end connected to the second end of the fifth capacitor and the first end of the twelfth resistor respectively; The first end of the fourth capacitor is connected to the input end of the RF amplification module; the second end of the ninth capacitor, the second end of the eighth capacitor, the second end of the sixth capacitor, and the second end of the fourteenth resistor are all grounded.

9. A radio frequency receiver, characterized in that: Comprising a low noise amplifier as claimed in any one of claims 1 to 8.

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