A semiconductor laser
By introducing a movable focus plate and linkage mechanism into the semiconductor laser, the focus bias problem caused by laser focus fixation in the prior art is solved, efficient processing of irregular workpieces is achieved, and the laser cladding quality is improved.
Patent Information
- Application Number
- CN202010650051.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-07-08
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2040-07-08
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Figure CN111653933B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of laser cladding, and in particular to a semiconductor laser used in the laser cladding technology. Background Art
[0002] Laser cladding technology refers to placing selected coating materials on the surface of the coated substrate in the form of different fillers, melting them and a thin layer on the substrate surface at the same time through laser irradiation, and quickly solidifying to form a surface coating with extremely low dilution and metallurgical bonding with the substrate material, thereby significantly improving the wear resistance, corrosion resistance, heat resistance, oxidation resistance and electrical properties of the substrate material surface. The laser cladding process requires the cooperation of a semiconductor laser.
[0003] In the prior art, the laser focus of the semiconductor laser is fixed, so when processing irregular workpieces, it is easy to produce defocusing, thereby affecting the quality of laser cladding. Summary of the invention
[0004] In view of the shortcomings of the prior art, the present invention aims to provide a semiconductor laser.
[0005] In order to achieve the above object, the present invention adopts the following technical solution:
[0006] A semiconductor laser comprises a laser transmitter, wherein the transmitting end of the laser transmitter is fixedly connected to a first light-shielding tube; the first light-shielding tube is hollow inside and is provided with a matching collar inside, and the collar can slide inside the first light-shielding tube; a focusing plate is fixedly installed inside the collar; a second light-shielding tube is sleeved on the outer tube wall of the first light-shielding tube, a connecting rod is provided on the outer side wall of the collar, a through groove is provided on the first light-shielding tube along the axial direction, and the connecting rod passes through the through groove and is fixedly connected to the inner side wall of the second light-shielding tube; the semiconductor laser also comprises a threaded sleeve, the inner side wall of the threaded sleeve has an internal thread, the outer side wall of the first light-shielding tube is provided with an external thread matching the internal thread, and the threaded sleeve is threadedly sleeved on the outer side wall of the first light-shielding tube; the threaded sleeve is connected to the second light-shielding tube, and when the threaded sleeve moves axially on the first light-shielding tube, the second light-shielding tube can be driven to move axially on the first light-shielding tube.
[0007] 2. The semiconductor laser according to claim 1 is characterized in that the threaded sleeve and the second light-shielding tube are connected by a linkage mechanism, and the linkage mechanism includes an annular groove, a U-shaped rod and an annular slider; the annular groove is circumferentially arranged around the outer wall of the second light-shielding tube, and the annular slider can be rotatably arranged in the annular groove; one end of the U-shaped rod is connected to the threaded sleeve, and the other end is connected to the annular slider.
[0008] Furthermore, a silicone anti-slip sleeve is fixedly provided on the outer wall of the threaded sleeve.
[0009] Furthermore, the emission end of the laser generator, the first light shielding tube, the collar, the focusing plate, the second light shielding tube and the threaded sleeve are coaxial.
[0010] Furthermore, a ball groove is formed at the bottom of the annular sliding block, and a rollable ball is installed in the ball groove, and the bottom of the ball protrudes from the ball groove and contacts the annular sliding groove.
[0011] Furthermore, a limit block is arranged on the outer side wall of the first light shielding tube at one end away from the laser emitter.
[0012] The present invention also provides a method for using the semiconductor laser, the specific process is as follows:
[0013] When the focus of the laser generator needs to be adjusted, the threaded sleeve is rotated to make the threaded sleeve move axially on the first light shielding tube, thereby driving the second light shielding tube to move axially on the first light shielding tube; the second light shielding tube drives the connecting rod to move along the through groove, and the connecting rod drives the ring to move axially, and finally drives the focusing plate to move axially in the first light shielding tube, thereby realizing the distance adjustment between the laser emitter and the focusing plate, thereby realizing the focus adjustment of the laser generator.
[0014] In the above method of use, the specific process of the threaded sleeve driving the second light shielding tube to move is:
[0015] When the threaded sleeve is rotated, the threaded sleeve drives the annular slider to rotate in the annular groove through the U-shaped rod, and during the axial movement of the threaded sleeve, the U-shaped rod generates a thrust or a pull on the annular slider, so that the annular slider generates a thrust or a pull on the second light-shielding tube during the rotation, thereby driving the second light-shielding tube to move axially.
[0016] The beneficial effect of the present invention is that in the semiconductor laser of the present invention, by adding a movable and adjustable focusing plate, the focus of the laser generator is adjustable, thereby facilitating the processing of irregular workpieces in the laser cladding process and effectively avoiding the occurrence of defocusing. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 is a cross-sectional schematic diagram of a semiconductor laser in Example 1 of the present invention;
[0018] Figure 2 for Figure 1 AA section view in;
[0019] Figure 3 for Figure 1 Enlarged view of part B in the figure. DETAILED DESCRIPTION
[0020] The present invention will be further described below in conjunction with the accompanying drawings. It should be noted that this embodiment is based on the technical solution and provides a detailed implementation method and specific operation process, but the protection scope of the present invention is not limited to this embodiment.
[0021] Example 1
[0022] This embodiment provides a semiconductor laser, such as Figure 1-3 As shown, it includes a laser transmitter 1, the emitting end of the laser transmitter 1 is fixedly connected with a first light-shielding tube 2; the first light-shielding tube 2 is hollow inside, and a matching ring 3 is provided inside, and the ring 3 can slide in the first light-shielding tube 2; a focusing plate 4 is fixedly installed in the ring 3; a second light-shielding tube 5 is sleeved on the outer tube wall of the first light-shielding tube 2, a connecting rod 6 is provided on the outer wall of the ring 3, a through groove 7 is opened on the first light-shielding tube 2 along the axial direction, and the connecting rod 6 passes through the through groove 7 and is fixedly connected to the inner wall of the second light-shielding tube 5; the semiconductor laser also includes a threaded sleeve 8, the inner wall of the threaded sleeve 8 has an internal thread, the outer wall of the first light-shielding tube 2 is provided with an external thread matching the internal thread, and the threaded sleeve 8 is threadedly sleeved on the outer wall of the first light-shielding tube 2; the threaded sleeve 8 is connected to the second light-shielding tube 5, and when the threaded sleeve 8 moves axially on the first light-shielding tube 2, it can drive the second light-shielding tube 5 to move axially on the first light-shielding tube 2.
[0023] In this embodiment, the threaded sleeve 8 and the second light-shielding tube 5 are connected through a linkage mechanism, and the linkage mechanism includes an annular slide groove 9, a U-shaped rod 10 and an annular slider 11; the annular slide groove 9 is circumferentially arranged around the outer wall of the second light-shielding tube 5, and the annular slider 11 is circumferentially rotatable in the annular slide groove 9; one end of the U-shaped rod 10 is connected to the threaded sleeve 8, and the other end is connected to the annular slider 11.
[0024] In this embodiment, a silicone anti-skid sleeve 12 is fixedly sleeved on the outer side wall of the threaded sleeve 8. The silicone anti-skid sleeve 12 can increase the adhesion of the hand, thereby facilitating the rotation of the threaded sleeve 8.
[0025] In this embodiment, the emission end of the laser generator 1, the first light shielding tube 2, the collar 3, the focusing plate 4, the second light shielding tube 5 and the threaded sleeve 8 are coaxial.
[0026] In this embodiment, a ball groove 13 is provided at the bottom of the annular slider 11, and a rollable ball 14 is installed in the ball groove 13, and the bottom of the ball 14 protrudes from the ball groove 13 and contacts the annular slide groove 9. The provision of the ball 14 can reduce the friction between the annular slider 11 and the annular slide groove 9 when the annular slider 11 rotates.
[0027] In this embodiment, a limit block 15 is provided on the outer side wall of the first light shielding tube 2 at one end away from the laser emitter 1. The setting of the limit block 15 can prevent the threaded sleeve 8 from being separated from the first light shielding tube 2.
[0028] Example 2
[0029] This embodiment provides a method for using the semiconductor laser as described in Embodiment 1, and the specific process is as follows:
[0030] When the focus of the laser generator 1 needs to be adjusted, the threaded sleeve 8 is rotated to make the threaded sleeve 8 move axially on the first light shielding tube 2, thereby driving the second light shielding tube 5 to move axially on the first light shielding tube 2; the second light shielding tube 5 drives the connecting rod 6 to move along the through groove 7, and the connecting rod 6 drives the ring 3 to move axially, and finally drives the focusing plate 4 to move axially in the first light shielding tube 2, thereby realizing the distance adjustment between the laser emitter 1 and the focusing plate 4, thereby realizing the focus adjustment of the laser generator 1.
[0031] Furthermore, in the above method, the specific process of the threaded sleeve 8 driving the second light shielding tube 5 to move is:
[0032] When the threaded sleeve 8 is rotated, the threaded sleeve 8 drives the annular slider 11 to rotate in the annular groove 9 through the U-shaped rod 10, and during the axial movement of the threaded sleeve 8, the U-shaped rod 10 generates a thrust or a pull on the annular slider 11, so that the annular slider 11 generates a thrust or a pull on the second shading tube 5 during the rotation, thereby driving the second shading tube 5 to move axially.
[0033] For those skilled in the art, various corresponding changes and modifications can be made according to the above technical solutions and concepts, and all of these changes and modifications should be included in the protection scope of the claims of the present invention.
Claims
1. A semiconductor laser, characterized in that: It includes a laser transmitter, the transmitting end of which is fixedly connected to a first light-shielding tube; the first light-shielding tube is hollow inside, and a matching ring is provided inside the first light-shielding tube, and the ring can slide inside the first light-shielding tube; a focusing plate is fixedly installed inside the ring; a second light-shielding tube is sleeved on the outer tube wall of the first light-shielding tube, a connecting rod is provided on the outer side wall of the ring, a through groove is opened on the first light-shielding tube along the axial direction, and the connecting rod passes through the through groove and is fixedly connected to the inner side wall of the second light-shielding tube; the semiconductor laser also includes a threaded sleeve, the inner side wall of the threaded sleeve has an internal thread, the outer side wall of the first light-shielding tube is provided with an external thread matching the internal thread, and the threaded sleeve is threadedly sleeved on the outer side wall of the first light-shielding tube; the threaded sleeve is connected to the second light-shielding tube, and when the threaded sleeve moves axially on the first light-shielding tube, it can drive the second light-shielding tube to move axially on the first light-shielding tube; The threaded sleeve and the second light-shielding tube are connected by a linkage mechanism, and the linkage mechanism includes an annular slide groove, a U-shaped rod and an annular slider; the annular slide groove is arranged circumferentially around the outer wall of the second light-shielding tube, and the annular slider is rotatably arranged in the annular slide groove; one end of the U-shaped rod is connected to the threaded sleeve, and the other end is connected to the annular slider; The emission end of the laser generator, the first light shielding tube, the collar, the focusing plate, the second light shielding tube and the threaded sleeve are coaxial.
2. The semiconductor laser according to claim 1, characterized in that A silicone anti-slip sleeve is fixedly sleeved on the outer side wall of the threaded sleeve.
3. The semiconductor laser according to claim 1, characterized in that A ball groove is provided at the bottom of the annular sliding block, and a rollable ball is installed in the ball groove. The bottom of the ball protrudes from the ball groove and contacts the annular sliding groove.
4. The semiconductor laser according to claim 1, characterized in that A limiting block is arranged on the outer side wall of one end of the first light shielding tube away from the laser emitter.
5. A method for using the semiconductor laser according to any one of claims 1 to 4, characterized in that: The specific process is as follows: When the focus of the laser generator needs to be adjusted, the threaded sleeve is rotated to make the threaded sleeve move axially on the first light shielding tube, thereby driving the second light shielding tube to move axially on the first light shielding tube; the second light shielding tube drives the connecting rod to move along the through groove, and the connecting rod drives the ring to move axially, and finally drives the focusing plate to move axially in the first light shielding tube, thereby realizing the distance adjustment between the laser emitter and the focusing plate, thereby realizing the focus adjustment of the laser generator.
6. The method of use according to claim 5, characterized in that: The specific process of the threaded sleeve driving the second light shielding tube to move is: When the threaded sleeve is rotated, the threaded sleeve drives the annular slider to rotate in the annular groove through the U-shaped rod, and during the axial movement of the threaded sleeve, the U-shaped rod generates a thrust or a pull on the annular slider, so that the annular slider generates a thrust or a pull on the second light-shielding tube during the rotation, thereby driving the second light-shielding tube to move axially.
