Electroplating device and its shunt structure

Abstract

The present invention discloses an electroplating device and a diversion structure thereof, wherein the diversion structure comprises at least one diversion channel, which is respectively arranged in the electroplating tank of the electroplating device and is used to divert the electroplating solution at the overflow position flowing to the electroplating tank; a diversion pipeline, which is respectively connected to the at least one diversion channel and is used to flow the electroplating solution diverted through the at least one diversion channel out of the electroplating tank; and a diversion valve, which is arranged on the diversion pipeline and is used to control the diversion speed of the electroplating solution in the diversion pipeline. The present invention effectively controls the flow rate of the electroplating solution at the overflow position, improves the electroplating uniformity of the edge of the wafer, and can meet higher product quality requirements; in addition, the diversion structure also has the advantages of simple structure and convenient operation.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor electroplating, and in particular to an electroplating device and a shunt structure thereof. Background Art

[0002] In semiconductor electroplating technology, electroplating uniformity is the key to the electroplating process. There are many factors that affect electroplating uniformity, such as the flow rate of the electroplating solution.

[0003] However, there is no technology in the prior art for controlling the flow rate of the plating solution at the overflow of the plating tank, resulting in poor uniformity at the edges of the produced semiconductors (such as wafers), thereby failing to meet higher product quality requirements. Summary of the invention

[0004] The technical problem to be solved by the present invention is to overcome the problem of poor uniformity of the edges of wafers after electroplating process in the prior art, which cannot meet the higher product quality requirements, and to provide an electroplating device and its shunt structure.

[0005] The present invention solves the above technical problems through the following technical solutions:

[0006] The present invention provides a shunt structure for an electroplating device, comprising:

[0007] At least one diversion channel is respectively arranged in the electroplating tank of the electroplating device and is used to divert the electroplating solution flowing to the overflow position of the electroplating tank;

[0008] A shunt pipeline is connected to the at least one shunt channel, and is used to flow the electroplating solution shunted through the at least one shunt channel out of the electroplating tank; and

[0009] The diversion valve is arranged on the diversion pipeline and is used to control the diversion speed of the electroplating solution in the diversion pipeline.

[0010] Preferably, the electroplating device further comprises at least one water inlet channel;

[0011] At least one water inlet channel is used to inject electroplating solution into the electroplating tank;

[0012] When the electroplating solution overflows the electroplating tank, the total amount of the electroplating solution injected through the at least one water inlet channel is equal to the sum of the amount of the electroplating solution diverted through the at least one diversion channel and the overflowing amount of the electroplating solution.

[0013] Preferably, a flow rate of the electroplating solution diverted through the at least one diversion channel is lower than an injection rate of the electroplating solution injected through the at least one water inlet channel.

[0014] Preferably, the electroplating solution flowing out through the diversion pipeline flows into a recovery tank of the electroplating device;

[0015] The recovery tank is connected to the liquid storage tank of the electroplating device, and the recovery tank is used to transport the acquired electroplating liquid to the liquid storage tank, and the liquid storage tank is used to provide the electroplating liquid to the at least one water inlet channel respectively.

[0016] Preferably, the number of the water inlet channels is at least three; and / or,

[0017] The at least one water inlet channel is respectively arranged on the bottom or the side of the electroplating tank.

[0018] Preferably, the diversion channel is provided through the bottom of the electroplating tank along the extension direction of the electroplating tank;

[0019] A slope is formed on one end of the diverter channel close to the top of the electroplating tank, wherein an edge position of the diverter channel close to the center of the electroplating tank is lower than an edge position close to the overflow position.

[0020] Preferably, each of the diversion channels adopts a hollow sandwich structure.

[0021] Preferably, the flow splitting structure further includes a flow sensor;

[0022] The flow sensor is disposed on the shunt pipeline and is used to collect the amount of electroplating liquid flowing out through the shunt pipeline within a preset time period.

[0023] Preferably, the diversion structure further includes a controller;

[0024] The controller is respectively connected to the flow sensor and the diverter valve for communication;

[0025] The controller is configured to control the opening of the diverter valve according to the amount of electroplating liquid flowing out within the preset time period collected by the flow sensor.

[0026] The present invention also provides an electroplating device, comprising the above-mentioned shunt structure for the electroplating device.

[0027] On the basis of being in accordance with the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present invention.

[0028] The positive and progressive effects of the present invention are:

[0029] In the present invention, a diversion channel is set in the electroplating tank to divert the plating solution at the overflow position of the electroplating tank, and the plating solution diverted in the diversion channel is drained out of the electroplating tank through the diversion pipeline; at the same time, the diversion speed of the plating solution in the diversion pipeline is controlled according to the opening of the diversion valve, that is, the plating solution at the overflow position is diverted by the diversion structure, the flow rate of the plating solution at the overflow position is reduced, thereby effectively reducing the influence of the flow rate of the plating solution at the overflow position on the edge uniformity of the wafer, and the height of the plating solution is guaranteed by effectively controlling the flow rate of the plating solution at the overflow position (equivalent to the flow control of the wafer edge), thereby improving the plating uniformity of the wafer edge, thereby being able to meet higher product quality requirements; in addition, the diversion structure also has the advantages of simple structure and easy operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0031] Figure 1 This is a first structural schematic diagram of the shunt structure for an electroplating device according to Example 1 of the present invention.

[0032] Figure 2 This is a second structural schematic diagram of the shunt structure for the electroplating device according to Example 1 of the present invention.

[0033] Figure 3 This is a third structural schematic diagram of the shunt structure for the electroplating device according to Example 1 of the present invention. DETAILED DESCRIPTION

[0034] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples.

[0035] Example 1

[0036] In order to overcome the above-mentioned existing defects, this embodiment provides a shunt structure for an electroplating device. Figure 1 As shown, the diversion structure for the electroplating device includes a diversion pipeline 1, a diversion valve 2, a flow sensor 3, a controller 4, at least one diversion channel 5, and at least one water inlet channel 6.

[0037] At least one water inlet channel 6 is used to inject electroplating solution into the electroplating tank A.

[0038] like Figure 2 As shown, at least one water inlet channel 6 is respectively arranged on the bottom or side of the electroplating tank of the electroplating device, and the number of the water inlet channels 6 is at least three.

[0039] In other possible implementations, the water inlet channel can be arranged at any position on the electroplating tank A according to actual needs. In addition, the number of water inlet channels arranged on the electroplating tank A can also be redesigned according to actual needs.

[0040] At least one diversion channel 5 is respectively arranged in the electroplating tank of the electroplating device, and the diversion channel 5 is used to divert the electroplating solution at the overflow position flowing to the electroplating tank.

[0041] Specifically, Figure 2 and Figure 3 As shown, the diversion channel 5 is arranged through the bottom of the electroplating tank A along the extension direction of the electroplating tank.

[0042] A slope is formed on one end of the diverter channel 5 near the top of the electroplating tank A; wherein the edge position of the diverter channel 5 near the center of the electroplating tank A is lower than the edge position near the overflow position. The slope formed on one end of the top of the diverter channel can be determined according to actual needs.

[0043] Each of the flow-dividing channels 5 adopts a hollow sandwich structure.

[0044] In other possible implementations, the top shape and specific structure of the diversion channel can be redesigned according to actual needs.

[0045] The number and size of the diversion channels can also be determined or adjusted according to actual needs.

[0046] The shunt pipelines 1 are respectively connected to at least one shunt channel 5, and the shunt channel is used to flow the electroplating liquid diverted through at least one shunt channel 5 out of the electroplating tank; wherein, the laying conditions of the shunt pipelines can be determined and adjusted according to actual needs.

[0047] The electroplating solution flowing out through the diversion pipeline 1 flows into the recovery tank of the electroplating device;

[0048] The recovery tank is connected to the liquid storage tank of the electroplating device. The recovery tank is used to transport the acquired electroplating liquid to the liquid storage tank. The liquid storage tank is used to provide electroplating liquid to at least one water inlet channel 6 respectively, so as to realize the recycling of the electroplating liquid diverted from the diversion pipeline.

[0049] In addition, a portion of the plating solution flowing out from the overflow position of the plating tank is used to electroplate the wafer, and the remaining portion flows into the recovery tank and is transported to the liquid storage tank to provide the plating solution to the water inlet channel.

[0050] The diverter valve 2 is disposed on the diverter pipeline 1, and is used to control the diverting speed of the electroplating solution in the diverter pipeline 1 to control the amount of the electroplating solution diverted by the diverter pipeline.

[0051] Specifically, the flow sensor 3 is disposed on the shunt pipeline 1 , and the flow sensor is used to collect the amount of the electroplating liquid flowing out through the shunt pipeline 1 within a preset time period.

[0052] The controller 4 is respectively connected to the flow sensor 3 and the diverter valve 2 for communication. The controller 4 is configured to control the opening of the diverter valve 2 according to the amount of plating liquid flowing out within a preset time period collected by the flow sensor 3, so as to achieve precise control of the diversion speed of the plating liquid in the diverter pipeline.

[0053] The opening of the diversion valve is controlled to ensure that the diversion speed of the electroplating solution diverted by at least one diversion channel 5 is lower than the injection speed of the electroplating solution injected through at least one water inlet channel 6 .

[0054] When the electroplating solution fills the electroplating tank and begins to overflow the electroplating tank, the total amount of electroplating solution injected through at least one water inlet channel 6 is equal to the sum of the amount of electroplating solution diverted through at least one diversion channel 5 and the overflowing amount of electroplating solution.

[0055] in addition, Figure 2 B in the figure represents the wafer to be electroplated, and C represents the shielding component. When the plating solution is continuously injected into the water inlet channel 6, the liquid level of the plating solution in the plating tank continuously rises along the direction of D. When the liquid level reaches the H1 position, the plating solution flows into the diversion channel; when the liquid level reaches the H2 position, the plating solution flows out from the overflow position of the plating tank while flowing into the diversion channel, that is, the plating solution at the overflow position is diverted by the diversion structure, thereby reducing the flow rate of the plating solution at the overflow position, thereby effectively realizing the edge flow control of the wafer.

[0056] like Figure 3 As shown, B represents the wafer to be electroplated. When the plating solution is continuously injected into the water inlet channel, the liquid level of the plating solution in the plating tank continuously rises along the D direction. When the liquid level reaches the H1 position, the plating solution flows into the diversion channel; when the liquid level reaches the H2 position, the plating solution flows out from the overflow position of the plating tank while flowing into the diversion channel, that is, the plating solution at the overflow position is diverted by the diversion structure, thereby reducing the plating solution flow at the overflow position, thereby effectively realizing the edge flow control of the wafer.

[0057] In the present embodiment, a diversion channel is provided in the electroplating tank to divert the plating liquid at the overflow position of the electroplating tank, and the plating liquid diverted in the diversion channel is drained out of the electroplating tank through the diversion pipeline; at the same time, the diversion speed of the plating liquid in the diversion pipeline is controlled according to the opening of the diversion valve, that is, the plating liquid at the overflow position is diverted by the diversion structure, and the plating liquid flow at the overflow position is reduced, thereby effectively reducing the influence of the plating liquid flow at the overflow position on the edge uniformity of the wafer, and by effectively controlling the plating liquid flow at the overflow position (equivalent to wafer edge flow control), the height of the plating liquid is guaranteed, thereby improving the plating uniformity of the wafer edge, thereby being able to meet higher product quality requirements; in addition, the diversion structure has the advantages of simple structure and easy operation.

[0058] Example 2

[0059] The electroplating device of this embodiment includes the shunt structure for the electroplating device in the first embodiment.

[0060] The electroplating device in this embodiment can effectively control the flow rate of the electroplating solution at the overflow position by adopting the above-mentioned diversion structure, improve the electroplating uniformity at the edge of the wafer, and thus improve the product performance of the entire electroplating device.

[0061] Although the specific embodiments of the present invention are described above, it should be understood by those skilled in the art that this is only for illustration and the protection scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. A shunt structure for an electroplating device, characterized in that: include: At least one diversion channel is respectively arranged in the electroplating tank of the electroplating device and is used to divert the electroplating solution flowing to the overflow position of the electroplating tank; The diversion channel is arranged at the bottom of the electroplating tank along the extension direction of the electroplating tank; A shunt pipeline, connected to the at least one shunt channel respectively, and used to flow the electroplating solution shunted through the at least one shunt channel out of the electroplating tank; as well as, The diversion valve is arranged on the diversion pipeline and is used to control the diversion speed of the electroplating solution in the diversion pipeline.

2. The flow dividing structure according to claim 1, characterized in that: The electroplating device also includes at least one water inlet channel; At least one water inlet channel is used to inject electroplating solution into the electroplating tank; When the electroplating solution overflows the electroplating tank, the total amount of the electroplating solution injected through the at least one water inlet channel is equal to the sum of the amount of the electroplating solution diverted through the at least one diversion channel and the overflowing amount of the electroplating solution.

3. The flow diversion structure according to claim 2, characterized in that: The flow rate of the electroplating solution diverted through the at least one diversion channel is lower than the injection rate of the electroplating solution injected through the at least one water inlet channel.

4. The flow diversion structure according to claim 2, characterized in that: The electroplating solution flowing out through the diversion pipeline flows into the recovery tank of the electroplating device; The recovery tank is connected to the liquid storage tank of the electroplating device, and the recovery tank is used to transport the acquired electroplating liquid to the liquid storage tank, and the liquid storage tank is used to provide the electroplating liquid to the at least one water inlet channel respectively.

5. The flow diversion structure according to claim 2, characterized in that: The number of the water inlet channels is at least three; and / or, The at least one water inlet channel is respectively arranged on the bottom or the side of the electroplating tank.

6. The flow dividing structure according to claim 1, characterized in that: A slope is formed on one end of the diverter channel close to the top of the electroplating tank, wherein an edge position of the diverter channel close to the center of the electroplating tank is lower than an edge position close to the overflow position.

7. The flow dividing structure according to claim 1, characterized in that: Each of the diversion channels adopts a hollow sandwich structure.

8. The flow dividing structure according to claim 1, characterized in that: The flow splitting structure also includes a flow sensor; The flow sensor is disposed on the shunt pipeline and is used to collect the amount of electroplating liquid flowing out through the shunt pipeline within a preset time period.

9. The flow dividing structure according to claim 8, characterized in that: The diversion structure also includes a controller; The controller is respectively connected to the flow sensor and the diverter valve for communication; The controller is configured to control the opening of the diverter valve according to the amount of electroplating liquid flowing out within the preset time period collected by the flow sensor.

10. An electroplating device, characterized in that: It comprises a shunt structure for an electroplating device as claimed in any one of claims 1 to 9.

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