Microwave plasma chemical vapor deposition device

Abstract

The present invention relates to a microwave plasma chemical vapor deposition device, comprising: a waveguide device; a reaction chamber, arranged below the waveguide device and connected to the waveguide device; a cooling cover, connected to the reaction chamber, for air cooling and heat dissipation of the reaction chamber; a shielding cover, arranged outside the reaction chamber to prevent leakage of electromagnetic radiation in the reaction chamber; a rotating lifting mechanism, the rotating lifting mechanism is connected to a growth platform arranged in the reaction chamber to enable the growth platform to perform linear motion and rotational motion in the reaction chamber. The microwave plasma chemical vapor deposition device of the present invention can provide a stable growth platform for the chemical vapor deposition process, avoiding the phenomenon of uneven growth of diamond film.

Description

Technical Field

[0001] The invention belongs to the technical field of diamond film preparation, and in particular relates to a microwave plasma chemical vapor deposition device. Background Art

[0002] Diamond film has a series of excellent properties such as high hardness, low friction coefficient, high thermal conductivity, high light transmittance, wide bandgap, high resistivity, high breakdown field strength and high carrier mobility. It is a multifunctional material with extremely superior performance. It is precisely because of its excellent performance in so many aspects that diamond film is one of the most attractive hot materials in the field of new materials in the 21st century.

[0003] At present, the methods for artificially synthesizing diamond include high temperature and high pressure method (HTHP), direct current arc plasma jet method (DCAPJ), hot wire chemical vapor deposition method (HFCVD), microwave plasma chemical vapor deposition method (MPCVD), among which MPCVD is the preferred method for preparing high-quality diamond films. This is due to the advantages of microwave-excited plasma, such as good controllability, high plasma density, and no electrode pollution.

[0004] When preparing diamond films, the existing microwave plasma chemical vapor deposition device will inevitably generate a lot of heat in the reaction chamber, and the electromagnetic radiation in the reaction chamber will also have leakage problems, which will cause unsatisfactory film formation effects. In addition, during the synthesis of the diamond film, the height of the diamond film will change, which will cause the diamond film to grow unevenly, affecting the film quality of the diamond film. Summary of the invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a microwave plasma chemical vapor deposition device. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0006] The present invention provides a microwave plasma chemical vapor deposition device, comprising:

[0007] Waveguide device;

[0008] A reaction chamber, arranged below the waveguide device and connected to the waveguide device;

[0009] A cooling hood connected to the reaction chamber and used for air cooling and heat dissipation of the reaction chamber;

[0010] A shielding cover is arranged outside the reaction chamber to prevent leakage of electromagnetic radiation in the reaction chamber;

[0011] A rotary lifting mechanism is connected to a growth platform arranged in the reaction chamber to enable the growth platform to perform linear motion and rotary motion in the reaction chamber.

[0012] In one embodiment of the present invention, the cooling cover includes an air distribution plate, an air duct, a fan and a connecting pipe, wherein:

[0013] The air distribution plate is arranged above the shielding cover;

[0014] The air duct is connected to the air balancing plate;

[0015] The fan is connected to the air duct through the connecting pipe.

[0016] In one embodiment of the present invention, a plurality of ventilation holes are provided on the air balancing plate.

[0017] In one embodiment of the present invention, the shielding cover is provided with a plurality of through holes.

[0018] In one embodiment of the present invention, the diameter of the through hole is less than or equal to 1 / 10 of the wavelength of the electromagnetic wave to be shielded.

[0019] In one embodiment of the present invention, the rotating lifting mechanism comprises a main shaft, a lifting mechanism and a rotating mechanism, and the main shaft is connected to the growth platform;

[0020] The lifting mechanism is connected to the main shaft to drive the main shaft to drive the growth platform to move up and down in the reaction chamber;

[0021] The rotating mechanism is connected to the main shaft to drive the main shaft to drive the growth platform to perform a rotating motion in the reaction chamber.

[0022] In one embodiment of the present invention, the lifting mechanism includes a first servo motor, a first transmission member and a first controller, wherein:

[0023] The first transmission member is connected to the first servo motor and the main shaft respectively;

[0024] The first controller is connected to the first servo motor and is used to control the first servo motor to drive the first transmission member to move, so that the main shaft drives the growth platform to move up and down in the reaction chamber.

[0025] In one embodiment of the present invention, the rotating mechanism includes a second servo motor, a second transmission member and a second controller, wherein:

[0026] The second transmission member is connected to the second servo motor and the main shaft respectively;

[0027] The second controller is connected to the second servo motor and is used to control the second servo motor to drive the second transmission member to move, so that the main shaft drives the growth platform to perform rotational movement in the reaction chamber.

[0028] In one embodiment of the present invention, a cooling mechanism is further included, wherein the cooling mechanism includes a water-jacketed shaft sleeved on the outside of the main shaft, wherein:

[0029] The side surface of the water jacket shaft is provided with a cooling water inlet and a cooling water outlet;

[0030] A water inlet channel and a water outlet channel are provided inside the main shaft. The water inlet channel is connected to the cooling water inlet through a water inlet groove provided on the main shaft, and the water outlet channel is connected to the cooling water outlet through a water outlet groove provided on the main shaft.

[0031] In one embodiment of the present invention, a vacuum pumping device is further included, connected to the reaction chamber.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] 1. The microwave plasma chemical vapor deposition device of the present invention is provided with a cooling cover for air cooling and heat dissipation of the reaction chamber, and a shielding cover for preventing electromagnetic radiation leakage in the reaction chamber. In the process of preparing diamond film by MPCVD method, the problem of unsatisfactory film formation effect caused by failure to timely cool the reaction chamber and leakage of electromagnetic radiation in the reaction chamber can be avoided;

[0034] 2. The microwave plasma chemical vapor deposition device of the present invention is provided with a rotating lifting mechanism. When preparing a diamond film, the rotating lifting mechanism drives the growth platform to move up and down and rotate in the reaction chamber, which can provide a stable growth platform for the chemical vapor deposition process and avoid the phenomenon of uneven growth of the diamond film;

[0035] 3. The microwave plasma chemical vapor deposition device of the present invention has a cooling mechanism that dissipates heat through water cooling and performs circulating water cooling on the growth platform, thereby avoiding micro-disturbance of electromagnetic waves caused by heat dissipation through cooling air and further improving the stability of the diamond film growth environment.

[0036] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following specifically cites a preferred embodiment and describes it in detail with the accompanying drawings as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1is a schematic diagram of a microwave plasma chemical vapor deposition device provided by an embodiment of the present invention;

[0038] Figure 2 is a schematic structural diagram of a cooling cover provided by an embodiment of the present invention;

[0039] Figure 3 is a schematic structural diagram of a shielding cover provided by an embodiment of the present invention;

[0040] Figure 4 is a three-dimensional schematic diagram of a rotary lifting mechanism provided by an embodiment of the present invention;

[0041] Figure 5 It is a schematic diagram of the structure of the cooling mechanism provided by an embodiment of the present invention.

[0042] Description of Reference Numerals

[0043] 100-waveguide device; 101-microwave source; 102-waveguide tube; 103-microwave antenna; 104-short-circuit piston; 200-reaction chamber; 201-growth platform; 300-cooling cover; 301-air balancing plate; 3011-ventilation hole; 302-air duct; 303-fan; 304-connecting pipe; 400-shielding cover; 401-through hole; 500-spindle; 501-sealing ring; 600-lifting mechanism; 601-first servo motor; 602-coupling; 603-screw; 604-straight Linear bearing; 605-linear guide; 606-guide sleeve; 607-telescopic bellows; 608-sealing substrate; 700-rotating mechanism; 701-second servo motor; 702-gear assembly; 703-magnetic fluid device; 800-cooling mechanism; 801-water jacket shaft; 8011-cooling water inlet; 8012-cooling water outlet; 802-water inlet channel; 803-water outlet channel; 804-water inlet trough; 805-water outlet trough; 900-vacuum extraction device; 901-vacuum chamber; 902-vacuum pump group. DETAILED DESCRIPTION

[0044] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined purpose of the invention, a microwave plasma chemical vapor deposition device proposed according to the present invention is described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0045] The above and other technical contents, features and effects of the present invention are clearly presented in the following detailed description of the specific implementation modes in conjunction with the accompanying drawings. Through the description of the specific implementation modes, the technical means and effects adopted by the present invention to achieve the predetermined purpose can be more deeply and specifically understood. However, the attached drawings are only for reference and explanation purposes and are not used to limit the technical solutions of the present invention.

[0046] Embodiment 1

[0047] See also Figure 1 , Figure 1 It is a microwave plasma chemical vapor deposition device. As shown in the figure, the microwave plasma chemical vapor deposition device of this embodiment includes a waveguide device 100; a reaction chamber 200, which is arranged below the waveguide device 100 and connected to the waveguide device 100; a cooling cover 300, which is connected to the reaction chamber 200 and is used to perform air cooling and heat dissipation on the reaction chamber 200; a shielding cover 400, which is arranged outside the reaction chamber 200 to prevent electromagnetic radiation leakage in the reaction chamber 200; and a rotating lifting mechanism, which is connected to a growth platform 201 arranged in the reaction chamber 200 to enable the growth platform 201 to perform linear motion and rotational motion in the reaction chamber 200.

[0048] Specifically, the waveguide device 100 is used as a microwave feeding device, including a microwave source 101, a waveguide tube 102, a microwave antenna 103 and a short-circuit piston 104. Among them, the microwave source 101 is used to generate microwaves, which can be a conventional microwave generator in the art, and the power of the microwaves generated can be 6 to 75 kW and the frequency can be 915 MHz to 2.45 GHz. In this embodiment, the power of the microwaves generated by the microwave source 101 is 6 to 10 kW and the frequency is 2.45 GHz. The 2.45 GHz microwaves generated by the microwave source 101 are transmitted to the reaction chamber 200 by the microwave antenna 103 through the waveguide tube 102, and the microwave energy emitted by the microwave source 101 can be controlled in a specific area by adjusting the short-circuit piston 104.

[0049] Please refer to Figure 2 and Figure 3 , Figure 2 is a schematic structural diagram of a cooling cover provided by an embodiment of the present invention; Figure 3 It is a schematic diagram of the structure of the shielding cover provided in an embodiment of the present invention. As shown in the figure, the connected cooling cover 300 and shielding cover 400 form a cylindrical shell, and the reaction chamber 200 is located inside the cylindrical shell. The cooling cover 300 includes an air distribution plate 301, an air duct 302, a fan 303 and a connecting pipe 304, wherein the air distribution plate 301 is arranged above the shielding cover 400; the air duct 302 is connected to the air distribution plate 301; and the fan 303 is connected to the air duct 302 through the connecting pipe 304. A plurality of evenly arranged through holes 401 are provided on the shielding cover 400.

[0050] In this embodiment, the fan 303 is an exhaust fan, and the fan 303 is connected to the air duct 302 through the connecting pipe 304 to form an air suction source. A plurality of ventilation holes 3011 are provided on the air balancing plate 301. Preferably, the ventilation holes 3011 are scattered on the air balancing plate 301. The ventilation holes 3011 can evenly disperse the wind to ensure that the cooling airflow between the shielding cover 400 and the reaction chamber 200 flows evenly, thereby reducing the temperature of the reaction chamber 200, so as to avoid the problem of unsatisfactory film forming effect caused by the failure of the reaction chamber 200 to cool in time. Specifically, the cooling process of the cooling cover 300 in this embodiment is as follows: the fan 303 is driven to move, and the hot air between the shielding cover 400 and the reaction chamber 200 enters the air duct 302 through the ventilation holes 3011 on the air balancing plate 301 and is then drawn away by the fan 303. The cooling air outside the shielding cover 400 enters the inside of the shielding cover 400 through the through hole 401 to cool the reaction chamber 200. During the operation of the exhaust fan, the air between the shielding cover 400 and the reaction chamber 200 is at a negative pressure (lower than atmospheric pressure), which makes the air density between them lower, so the heat and mass transfer coefficient will also be lower, which is a disadvantage of the exhaust fan. Since the exhaust fan blades are driven locally, the local flow velocity of the outlet air is higher, and the local wind speed is also higher, so the hot air between the exhaust shielding cover 400 and the reaction chamber 200 is blown farther, which can reduce the amount of hot air reflux.

[0051] In other embodiments, the fan 303 may be a blow-in fan, and the fan 303 is connected to the air duct 302 through the connecting pipe 304 to form an air blowing source. Specifically, in this embodiment, the cooling process of the cooling cover 300 is as follows: the fan 303 is driven to move, and the cooling air is blown into the air duct 302 through the fan 303 and the connecting pipe 304, and then is evenly dispersed into the inside of the shielding cover 400 through the ventilation holes 3011 on the air balancing plate 301, so as to cool down the reaction chamber 200. The hot air between the shielding cover 400 and the reaction chamber 200 passes through the through hole 401 on the shielding cover 400 to the outside of the shielding cover 400. During the operation of the blow-in fan, the fan blows the external cooling air into the space between the shielding cover 400 and the reaction chamber 200. Therefore, the air between the shielding cover 400 and the reaction chamber 200 is at a positive pressure (greater than the atmospheric pressure), so that the air density between them is also higher than the air density under atmospheric pressure, so the heat exchange coefficient of the air is slightly higher, which is the advantage of the blow-in fan. Since the blow-in fan is affected by the fan blades, the air kinetic energy is locally larger at the inlet end, so the local wind speed of the inlet air is also higher, and the air flow at the outlet end (that is, around the through hole 401) is dispersed, and the air outlet speed is relatively stable, so relatively speaking, there are more cases of air outlet backflow.

[0052] It is worth noting that, in the specific application process, the fan 303 can be selected as an exhaust fan or a blowing fan according to the actual situation and needs, and this application does not make any limitation here.

[0053] The microwave plasma chemical vapor deposition apparatus of this embodiment is provided with a cooling hood 300 for air cooling and heat dissipation of the reaction chamber 200. In the process of preparing diamond films by MPCVD method, the problem of unsatisfactory film formation effect caused by the failure of the reaction chamber 200 to be cooled in time can be avoided.

[0054] Furthermore, if Figure 3 As shown, a plurality of through holes 401 are provided on the shielding cover 400, and the diameter of the through hole 401 is less than or equal to 1 / 10 of the wavelength of the electromagnetic wave to be shielded. In this embodiment, the frequency of the electromagnetic wave is 2.45 GHz, so the diameter of the through hole 401 is less than or equal to 12 mm. The shielding cover 400 of this embodiment can prevent the electromagnetic radiation leakage in the reaction chamber 200 as follows: the shielding cover 400 of this embodiment is similar to a Faraday cage, which can achieve electrostatic shielding. A Faraday cage is a metal shell that prevents the electromagnetic field (EM field) from entering or escaping. An ideal Faraday cage is composed of an undamaged, perfect conductive layer. In practice, this ideal state cannot be achieved, but it can be achieved by using a fine-mesh copper screen. The shielding cover 400 of this embodiment plays a "blocking" role on the electromagnetic waves in the reaction chamber 200, preventing the outside from being disturbed by the electromagnetic wave radiation in the reaction chamber 200, forming an electrostatic shield, so that the shielding cover 400 of this embodiment has the ability to prevent electromagnetic radiation leakage.

[0055] In other embodiments, the shielding cover 400 may also be a metal mesh structure, wherein the mesh size of the metal mesh structure is less than or equal to 1 / 10 of the wavelength of the electromagnetic wave to be shielded.

[0056] The microwave plasma chemical vapor deposition device of this embodiment is provided with a cooling cover 300 for air cooling and heat dissipation of the reaction chamber 200, and a shielding cover 400 for preventing leakage of electromagnetic radiation in the reaction chamber 200. In the process of preparing diamond film by MPCVD method, the problem of unsatisfactory film forming effect caused by failure to cool the reaction chamber 200 in time and leakage of electromagnetic radiation in the reaction chamber 200 can be avoided.

[0057] Preferably, in this embodiment, the distribution position and density of the through holes 401 on the shielding cover 400 can be obtained according to the calculation of the cooling air volume and the heat release power of the reaction in the reaction chamber 200. Specifically, in this embodiment, the spacing of the through holes 401 is 10 mm, and the calculation process is as follows: first, the size of the cooling air volume is calculated according to the heat release power of the reaction in the reaction chamber 200, and then the air inlet area of ​​the shielding cover 400 is calculated according to the wind speed of the fan 303 (0.2m / s), and finally the spacing between the through holes 401 is calculated according to the diameter of the through holes 401 and the air inlet area of ​​the shielding cover 400.

[0058] See also Figure 4 , Figure 4 : is a three-dimensional schematic diagram of a rotary lifting mechanism provided by an embodiment of the present invention. As shown in the figure, the rotary lifting mechanism includes a main shaft 500, a lifting mechanism 600 and a rotating mechanism 700. The main shaft 500 is connected to the growth platform 201; the lifting mechanism 600 is connected to the main shaft 500 to drive the main shaft 500 to drive the growth platform 201 to move up and down in the reaction chamber 200; the rotating mechanism 700 is connected to the main shaft 500 to drive the main shaft 500 to drive the growth platform 201 to rotate in the reaction chamber 200. When preparing a diamond film, the lifting mechanism 600 drives the growth platform 201 to move up and down and rotate in the reaction chamber 200. During the continuous growth of the diamond film, as the thickness of the diamond film increases, the growth platform 201 is adjusted to automatically descend accordingly, which can keep the position of the upper surface of the diamond relative to the plasma unchanged, ensure that the diamond film grows in a steady-state environment, and improve the quality of the diamond film. Furthermore, during the continuous growth of the diamond film, the rotating mechanism 700 drives the growth platform 201 to rotate in the reaction chamber 200, which can also avoid the uneven growth of the diamond film.

[0059] Specifically, the lifting mechanism 600 of this embodiment includes a first servo motor 601, a first transmission member and a first controller (not shown in the figure). Among them, the first servo motor 601 provides power for the linear motion of the main shaft 500. The first transmission member is connected to the first servo motor 601 and the main shaft 500 respectively, and converts the rotational motion of the first servo motor 601 into the linear motion of the main shaft 500, so that the main shaft 500 drives the growth platform 201 to move up and down in the reaction chamber 200. In this embodiment, the first transmission member includes a coupling 602, a lead screw 603, a linear bearing 604 and a linear guide 605. The first servo motor 601 drives the lead screw 603 to rotate through the coupling 602, and under the guidance of the linear bearing 604 and the linear guide 605, the rotational motion is converted into linear motion, driving the main shaft 500 to move up and down. The first controller is connected to the first servo motor 601, and is used to control the first servo motor 601 to drive the first transmission member to move, so that the main shaft 500 drives the growth platform 201 to move up and down in the reaction chamber 200.

[0060] It should be noted that the first transmission member may also be other mechanical mechanisms that can convert the rotational motion of the first servo motor 601 into the linear motion of the main shaft 500, and there is no limitation to this.

[0061] Furthermore, the lifting mechanism 600 further includes a guide sleeve 606 and a telescopic bellows 607, both of which are sleeved on the outside of the spindle 500, wherein the guide sleeve 606 is close to the top of the spindle 500, and is used to provide a guide support for the spindle 500 to move up and down; the telescopic bellows 607 is located below the guide sleeve 606, and a sealing substrate 608 is provided between the telescopic bellows 607 and the guide sleeve 606. The telescopic bellows 607 and the sealing substrate 608 form a telescopic vacuum chamber to ensure that the position above the sealing substrate 608 maintains a high vacuum degree.

[0062] The rotating mechanism 700 of this embodiment includes a second servo motor 701, a second transmission member and a second controller (not shown in the figure), wherein the second servo motor 701 provides power for the rotational movement of the main shaft 500. The second transmission member is connected to the second servo motor 701 and the main shaft 500, respectively, and converts the rotational movement of the second servo motor 701 into the rotational movement of the main shaft 500, so that the main shaft 500 drives the growth platform 201 to perform rotational movement in the reaction chamber 200. In this embodiment, the second transmission member includes a gear assembly 702, and the second servo motor 701 transmits the rotational power to the main shaft 500 through the gear assembly 702, driving the main shaft 500 to perform rotational movement. The second controller is connected to the second servo motor 701, and is used to control the second servo motor 701 to drive the second transmission member to move, so that the main shaft 500 drives the growth platform 201 to perform rotational movement in the reaction chamber 200.

[0063] It should be noted that the second transmission member may also be other mechanical mechanisms that can convert the rotational motion of the second servo motor 701 into the rotational motion of the main shaft 500, and there is no limitation to this.

[0064] Furthermore, the rotating mechanism 700 also includes a magnetic fluid device 703, which is sleeved on the outside of the main shaft 500 and located below the telescopic bellows 607. The built-in bearing of the magnetic fluid device 703 and the guide sleeve 606 together provide a guide support for the rotational motion of the main shaft 500. The magnetic fluid device 703 is a vacuum sealing device that can transmit the rotational motion to the sealed container. When the magnetic fluid is injected into the gap of the magnetic field, it can fill the entire gap to form a "liquid O-ring", thereby achieving a sealing effect. Magnetic fluid, also known as magnetic liquid, ferromagnetic fluid or magnetic liquid, is a new type of functional material that has both the fluidity of liquid and the magnetism of solid magnetic material.

[0065] During the continuous growth of the diamond film, the rotating mechanism 700 drives the main shaft 500 to drive the growth platform 201 to rotate in the reaction chamber 200. As the thickness of the diamond film increases, the lifting mechanism 600 is used to adjust the growth platform 201 to automatically descend to keep the position of the upper surface of the diamond relative to the plasma unchanged, ensuring that the diamond film grows in a steady-state environment and improving the quality of the diamond film.

[0066] See also Figure 5 , Figure 5 1 is a schematic diagram of the structure of the cooling mechanism provided by an embodiment of the present invention. As shown in the figure, the cooling mechanism 800 of this embodiment includes a water jacket shaft 801 sleeved on the outside of the main shaft 500, wherein a cooling water inlet 8011 and a cooling water outlet 8012 are provided on the side of the water jacket shaft 801; a water inlet channel 802 and a water outlet channel 803 are provided inside the main shaft 500, the water inlet channel 802 is connected to the cooling water inlet 8011 through a water inlet groove 804 provided on the main shaft 500, and the water outlet channel 803 is connected to the cooling water outlet 8012 through a water outlet groove 805 provided on the main shaft 500.

[0067] In this embodiment, the top of the water inlet channel 802 is connected to the top of the water outlet channel 803, and the cooling water inlet 8011 and the cooling water outlet 8012 are connected to the external cooling water, and a circulating water cooling loop is formed between them. The cooling water exchanges heat with the growth platform 201 and is output to the outside of the reaction chamber 200. The water inlet groove 804 and the water outlet groove 805 are opened around the side of the main shaft 500. When the rotating mechanism 700 drives the main shaft 500 to drive the growth platform 201 to rotate in the reaction chamber 200, the water jacket shaft 801 is fixed. After the external cooling water enters through the water inlet groove 804 connected to the water inlet channel 802, it exchanges heat with the growth platform 201 and is discharged from the water outlet channel 803, the water outlet groove 805, and the cooling water outlet 8012 in sequence. Further, a plurality of grooves are opened on the main shaft 500, and a sealing ring 501 is embedded in the groove. The water jacket shaft 801 is sealed and connected to the main shaft 500 through the sealing ring 501.

[0068] The cooling mechanism 800 of this embodiment performs circulating water cooling on the growth platform 201 by water cooling, thereby avoiding the disturbance of electromagnetic waves caused by the use of cooling air to dissipate heat, and further improving the stability of the diamond film growth environment.

[0069] Furthermore, the microwave plasma chemical vapor deposition device of the present embodiment further includes a vacuum pumping device 900 for ensuring that the microwave plasma chemical vapor deposition reaction is carried out under a vacuum state. The vacuum pumping device 900 of the present embodiment includes a vacuum chamber 901 and a vacuum pump group 902 connected to each other, the vacuum chamber 901 is connected to the reaction chamber 200, the rotary lifting mechanism is located below the vacuum chamber 901, and the spindle 500 passes through the vacuum chamber 901 and is connected to the growth platform 201 in the reaction chamber 200.

[0070] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "include", "comprise" or any other variant is intended to cover non-exclusive inclusion, so that the article or device including a series of elements includes not only those elements, but also other elements that are not explicitly listed. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the article or device including the elements. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The orientation or position relationship indicated by "up", "down", "left", "right", etc. is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.

[0071] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0072] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A microwave plasma chemical vapor deposition device, characterized in that: include: A waveguide device (100); A reaction chamber (200) is arranged below the waveguide device (100) and connected to the waveguide device (100); A cooling cover (300) is connected to the reaction chamber (200) and is used for air cooling and heat dissipation of the reaction chamber (200); the cooling cover (300) comprises an air distribution plate (301), an air duct (302), a fan (303) and a connecting pipe (304), wherein the air distribution plate (301) is arranged above the shielding cover (400); the air duct (302) is connected to the air distribution plate (301); the fan (303) is connected to the air duct (302) through the connecting pipe (304); a plurality of ventilation holes (3011) are arranged on the air distribution plate (301); the ventilation holes (3011) are staggeredly distributed on the air distribution plate (301); A shielding cover (400) is arranged outside the reaction chamber (200) to prevent leakage of electromagnetic radiation in the reaction chamber (200); a plurality of through holes (401) are provided on the shielding cover (400); the diameter of the through holes (401) is less than or equal to 1 / 10 of the wavelength of the electromagnetic wave to be shielded; A rotary lifting mechanism is connected to a growth platform (201) provided in the reaction chamber (200) to enable the growth platform (201) to perform linear motion and rotary motion in the reaction chamber (200).

2. The microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The rotating lifting mechanism comprises a main shaft (500), a lifting mechanism (600) and a rotating mechanism (700), and the main shaft (500) is connected to the growth platform (201); The lifting mechanism (600) is connected to the main shaft (500) to drive the main shaft (500) to drive the growth platform (201) to move up and down in the reaction chamber (200); The rotating mechanism (700) is connected to the main shaft (500) to drive the main shaft (500) to drive the growth platform (201) to perform a rotating motion in the reaction chamber (200).

3. The microwave plasma chemical vapor deposition device according to claim 2, characterized in that: The lifting mechanism (600) comprises a first servo motor (601), a first transmission member and a first controller, wherein: The first transmission member is connected to the first servo motor (601) and the main shaft (500) respectively; The first controller is connected to the first servo motor (601) and is used to control the first servo motor (601) to drive the first transmission member to move, so that the main shaft (500) drives the growth platform (201) to move up and down in the reaction chamber (200).

4. The microwave plasma chemical vapor deposition device according to claim 2, characterized in that: The rotating mechanism (700) comprises a second servo motor (701), a second transmission member and a second controller, wherein: The second transmission member is connected to the second servo motor (701) and the main shaft (500) respectively; The second controller is connected to the second servo motor (701) and is used to control the second servo motor (701) to drive the second transmission member to move, so that the main shaft (500) drives the growth platform (201) to perform rotational movement in the reaction chamber (200).

5. The microwave plasma chemical vapor deposition device according to claim 4, characterized in that: It also includes a cooling mechanism (800), wherein the cooling mechanism (800) includes a water-jacketed shaft (801) sleeved on the outside of the main shaft (500), wherein: The side of the water jacket shaft (801) is provided with a cooling water inlet (8011) and a cooling water outlet (8012); A water inlet channel (802) and a water outlet channel (803) are provided inside the main shaft (500); the water inlet channel (802) is connected to the cooling water inlet (8011) via a water inlet groove (804) provided on the main shaft (500); and the water outlet channel (803) is connected to the cooling water outlet (8012) via a water outlet groove (805) provided on the main shaft (500).

6. The microwave plasma chemical vapor deposition device according to claim 1, characterized in that: It also includes a vacuum pumping device (900) connected to the reaction chamber (200).

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