Substrate processing method and substrate processing device

Abstract

The present invention relates to a substrate processing method and a substrate processing device. The device includes: a chamber having a processing space for processing a substrate; a substrate supporting unit for supporting the substrate in the processing space; a gas supply unit for supplying gas into the processing space; and a plasma source for generating plasma from the gas supplied to the processing space, wherein the gas supply unit includes a shower head unit and a gas block, the shower head unit is arranged in the top of the chamber so as to avoid the substrate supporting unit, wherein the shower head unit is defined with a plurality of exhaust holes, wherein the gas is exhausted through the exhaust holes, and the gas block is used to supply the gas to the shower head unit, wherein the shower head unit has separation areas defined in the shower head unit, the separation areas are respectively connected to the exhaust holes, and wherein the gas block supplies the gas to the separation areas at different flow rates.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] The present application claims the priority benefit of Korean Patent Application No. 10-2019-0076764 filed on June 27, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Embodiments of the inventive concepts described herein relate to a substrate processing method and a substrate processing apparatus, and more particularly, to a substrate processing method and a substrate processing apparatus for processing a substrate using a gas. Background Art

[0004] In the process of manufacturing semiconductor devices, various processes such as photolithography, etching, thin film deposition, ion implantation and cleaning are performed. A substrate processing apparatus using gas is used for etching process, thin film deposition process, ion implantation process and cleaning process among the above processes.

[0005] Generally, a gas treatment process includes supplying a process gas into a chamber to process a substrate using the process gas. A shower head having a size similar to that of the substrate is placed above the substrate so that the process gas is uniformly supplied to the entire area of ​​the substrate. The shower head has a plurality of discharge holes defined in a surface of the shower head facing the substrate. Thus, the process gas is supplied to the substrate from each of the discharge holes to process the substrate using the process gas.

[0006] Usually, the exhaust holes have the same shape and supply gas at the same flow rate. However, during the process, a portion of the process gas reacts with the showerhead to change the size of the exhaust hole. For example, the process gas can act as an etching gas to remove the film of the substrate, and the process gas can etch the showerhead.

[0007] In particular, the exhaust extends from the inner end to the exhaust end, and the exhaust end is exposed to the space in which the substrate is processed. Figure 1 As shown, the amount of exposure of the discharge end 2a to the etching gas is greater than the amount of exposure of the inner end 2b to the etching gas. Therefore, as the process is repeated, the discharge end 2a has a larger diameter than the diameter of the inner end 2b.

[0008] As a result, the exhaust holes exhaust the process gas at different flow rates, which leads to uneven gas treatment. In particular, the gas from the central area of ​​the showerhead 2 may have a lower gas flow rate than the gas from other areas of the showerhead 2. In this case, if Figure 2 As shown, the process gas is exhausted from the central area but does not reach the substrate. Summary of the invention

[0009] Embodiments of the inventive concept provide an apparatus and method capable of uniformly processing a substrate using a process gas.

[0010] Furthermore, embodiments of the present inventive concepts provide an apparatus and method for exhausting a process gas at a uniform rate across zones.

[0011] The purpose of the present invention is not limited to this. Through the following description, those skilled in the art will clearly understand other purposes not mentioned.

[0012] According to an exemplary embodiment, an apparatus for processing a substrate includes: a chamber having a processing space for processing the substrate; a substrate supporting unit for supporting the substrate in the processing space; a gas supply unit for supplying gas into the processing space; and a plasma source for generating plasma from the gas supplied to the processing space, wherein the gas supply unit includes: a nozzle unit, which is arranged in the top of the chamber so as to face away the substrate supporting unit, wherein a plurality of exhaust holes are defined in the nozzle unit, wherein the gas is exhausted through the exhaust holes; and a gas block, which is used to supply the gas to the nozzle unit, wherein the nozzle unit has separation areas defined in the nozzle unit, the separation areas are respectively connected to the exhaust holes, and wherein the gas block supplies the gas to the separation areas at different flow rates.

[0013] The device may also include a controller, which controls the gas block, wherein, when viewed from above, the separated area includes: a first area including a center, and a second area surrounding the first area, wherein the gas block includes: a main body, the main body having a first fluid channel defined in the main body and a second fluid channel defined in the main body, the first fluid channel is connected to the first area, and the second fluid channel is connected to the second area; a first regulator, the first regulator is used to adjust the flow rate of the gas flowing in the first fluid channel to a first flow rate; a second regulator, the second regulator is used to adjust the flow rate of the gas flowing in the second fluid channel to a second flow rate, wherein the controller can control the first regulator and the second regulator so that the first flow rate and the second flow rate are different from each other.

[0014] The controller may control the first regulator and the second regulator so that the first flow rate is higher than the second flow rate.

[0015] The controller may control the first regulator to increase the first flow rate as the number of processes for treating the substrate increases.

[0016] The controller may control the second regulator to increase the second flow rate as the number of processes for treating the substrate increases.

[0017] The controller may control the first regulator and the second regulator to increase the first flow rate and the second flow rate, respectively, so that a flow rate of the gas to be supplied to the space between the shower head unit and the substrate supporting unit is constant.

[0018] According to an exemplary embodiment, a method for processing a substrate includes: discharging a process gas from a first separation area and a second separation area defined in a showerhead unit toward a substrate, thereby processing the substrate using the process gas, wherein flow rates of the gas to be supplied to the first area and the second area, respectively, are different from each other.

[0019] When viewed from above, the first region may include a center, and the second region may surround the first region, wherein the second flow velocity is lower than the first flow velocity.

[0020] The substrate may include a first substrate to an N-th substrate (N is a natural number greater than 2), wherein processing the substrate using the process gas includes sequentially processing the first substrate to the N-th substrate using the process gas, wherein the first flow rate during the process of processing the N-th substrate is higher than the first flow rate during the process of processing the first substrate.

[0021] The process gas may include an etching gas to etch the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above and other objects and features will become apparent from the following description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and wherein:

[0023] Figure 1 is a view showing a discharge hole of a conventional spray head;

[0024] Figure 2 It shows that from Figure 1 A view of the gas flow discharged from the nozzle;

[0025] Figure 3 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present inventive concept;

[0026] Figure 4 It shows Figure 3 The plan view of the baffle;

[0027] Figure 5It is schematically shown Figure 3 A cutaway perspective view of a nozzle unit;

[0028] Figure 6 It shows Figure 5 A plan view of the distribution plate;

[0029] Figure 7 It shows Figure 5 an enlarged view of the discharge holes in each area of ​​; and

[0030] Figure 8 It shows that from Figure 7 A view of the gas flow discharged from each discharge hole in FIG. DETAILED DESCRIPTION

[0031] Hereinafter, the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be interpreted as being limited to the following embodiments. The embodiments are configured to more fully convey the present invention to those of ordinary skill in the art. Therefore, the shapes of the elements in the accompanying drawings are enlarged to emphasize a clearer description.

[0032] In this embodiment, as an example, a substrate processing apparatus for etching a substrate in a chamber using plasma will be described. However, the inventive concept is not limited thereto. Any apparatus for processing a substrate using gas discharged from a showerhead unit can be applied to various processes.

[0033] In the following, reference will be made to Figures 3 to 8 The inventive concept is described.

[0034] Figure 3 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the inventive concept. Figure 3 , the substrate processing apparatus 10 includes a chamber 100 , a substrate supporting unit 200 , a plasma source 400 , a baffle 500 , a gas supply unit 600 , and a controller 900 .

[0035] The chamber 100 provides a processing space in which a substrate W is processed. The chamber 100 has a cylindrical shape. The chamber 100 is made of a metal material. For example, the chamber 100 may be made of an aluminum material. An opening 130 is formed in one side wall of the chamber 100. The opening 130 is implemented as an inlet 130 through which a substrate W can be sent into the chamber and can be taken out of the chamber. The inlet 130 can be opened and closed by a door 140. An exhaust hole 150 is formed in the bottom surface of the chamber 100. The exhaust hole 150 is connected to a decompression member 160 via an exhaust line. The decompression member 160 provides vacuum pressure to the exhaust hole 150 via an exhaust line. The byproducts generated during the process and the plasma remaining in the chamber 100 are discharged to the outside of the chamber 100 using the vacuum pressure.

[0036] The substrate supporting unit 200 supports the substrate W in the processing space. The substrate supporting unit 200 may be implemented as an electrostatic chuck 200 for supporting the substrate W using an electrostatic force. Alternatively, the substrate supporting unit 200 may support the substrate W in various schemes such as mechanical clamping.

[0037] The electrostatic chuck 200 includes a dielectric plate 210, a focusing ring 250, and a base 230. The substrate W is placed directly on the top surface of the dielectric plate 210. The dielectric plate 210 has a disk shape. The dielectric plate 210 may have a radius smaller than the radius of the substrate W. The internal electrode 212 is installed inside the dielectric plate 210. A power source (not shown) is connected to the internal electrode 212, and power is applied to the internal electrode from the power source (not shown). The internal electrode 212 provides an electrostatic force using the applied power (not shown), thereby adsorbing the substrate W onto the dielectric plate 210. On the inner side of the dielectric plate 210, a heater 214 for heating the substrate W is installed. The heater 214 may be located below the internal electrode 212. The heater 214 may be implemented as a spiral coil. For example, the dielectric plate 210 may be made of a ceramic material.

[0038] The base 230 supports the dielectric plate 210 thereon. The base 230 is located below the dielectric plate 210 and is fixedly coupled to the dielectric plate 210. The top surface of the base 230 has a stepped shape so that the central area of ​​the base 230 is higher than the edge area of ​​the base 230. The base 230 has a central area of ​​the top surface having an area corresponding to the area of ​​the bottom surface of the dielectric plate 210. A cooling fluid channel 232 is formed inside the base 230. The cooling fluid channel 232 is implemented as a channel through which a cooling fluid circulates. The cooling fluid channel 232 may have a spiral shape inside the base 230. The base is connected to a high-frequency power supply 234 located outside the base. The high-frequency power supply 234 applies power to the base 230. The power applied to the base 230 guides the plasma generated in the chamber 100 to move toward the base 230. The base 230 may be made of a metal material.

[0039] The focusing ring 250 focuses plasma onto the substrate W. The focusing ring 250 includes an inner ring 252 and an outer ring 254. The inner ring 252 has an annular ring shape surrounding the dielectric plate 210. The inner ring 252 is located on the edge region of the base 230. The top surface of the inner ring 252 is configured to have the same vertical level as the vertical level of the top surface of the dielectric plate 210. The top surface of the inner part of the inner ring 252 supports the bottom surface of the edge region of the substrate W. For example, the inner ring 252 can be made of a conductive material. The outer ring 254 has an annular ring shape surrounding the inner ring 252. The outer ring 254 is adjacent to the inner ring 252 on the edge region of the base 230. The top surface of the outer ring 254 has a vertical height higher than the vertical height of the top surface of the inner ring 252. The outer ring 254 can be made of an insulating material.

[0040] The plasma source 400 excites the process gas in the chamber 100 into a plasma state. In one embodiment, the plasma source 400 may be implemented as a capacitively coupled plasma (CCP) source. The plasma source 400 may include an upper electrode and a lower electrode (not shown) inside the chamber 100. The upper electrode 420 and the lower electrode may be arranged vertically and may be parallel to each other inside the chamber 100. High-frequency power may be applied to one of the upper electrode and the lower electrode, and the other electrode may be grounded. An electromagnetic field may be generated in the space between the two electrodes, so that the process gas supplied to the space may be excited into a plasma state. In one embodiment, the upper electrode 420 may be disposed in the showerhead 650, and the lower electrode may be disposed in the base. High-frequency power may be applied to the lower electrode, and the upper electrode 420 may be grounded. Alternatively, high-frequency power may be applied to both the upper electrode and the lower electrode. Therefore, an electromagnetic field is generated between the upper electrode 420 and the lower electrode. The generated electromagnetic field excites the process gas contained in the chamber 100 into a plasma state.

[0041] The baffle 500 discharges plasma uniformly across the area in the processing space in a divided manner. Figure 4 It shows Figure 3 The plan view of the baffle. Figure 4 , the baffle 500 is located between the inner wall of the chamber 100 and the substrate supporting unit 400 in the processing space. The baffle 500 has an annular ring shape. A plurality of through holes 502 are formed in the baffle 500. Each through hole 502 may extend in a vertical direction. The through holes 502 are arranged along the circumferential direction of the baffle 500. Each through hole 502 has a slit shape extending in a radial direction of the baffle 500.

[0042] The gas supply unit 600 supplies the process gas into the processing space. The gas supply unit 600 includes a showerhead unit 600 and a gas block 800. The showerhead unit 600 is positioned above the substrate W located on the substrate support unit 400 and avoids the substrate W. The showerhead unit 600 has a plurality of discharge holes 712 defined in its bottom surface facing the substrate W. The showerhead unit 600 is mounted on the upper wall of the chamber 100. In one embodiment, the showerhead unit may be positioned so that its central axis coincides with the central axis of the chamber 100. For example, the process gas may be an etching gas.

[0043] The gas block 800 supplies the process gas to the showerhead unit 600. The showerhead unit 600 has a plurality of regions defined in the showerhead unit 600 and separated from each other. The regions are communicated with the exhaust holes 712. The gas block 800 supplies the process gas to each separated region. The gas block 800 supplies the process gas to the regions at different flow rates.

[0044] Hereinafter, the shower head unit 600 will be described in more detail. Figure 5 It is schematically shown Figure 3 A cutaway stereogram of the nozzle unit in FIG. Figure 6 It shows Figure 5 The plan view of the distribution plate. Figure 5 and Figure 6 , the shower head unit 600 includes a discharge plate 710, a distribution plate 730, and an introducing plate 770. The discharge plate 710, the distribution plate 730, and the introducing plate 770 are stacked up in this order and vertically.

[0045] The discharge plate 710 has a plate shape. For example, the discharge plate 710 may have a disc shape. The discharge plate 710 has a bottom surface exposed to the processing space. A plurality of discharge holes 712 are formed in the discharge plate 710. Each discharge hole 712 extends in a vertical direction. Process gas is supplied to the processing space through the discharge hole 712. The discharge hole 712 extends from the bottom surface of the discharge plate 710 to the top surface. The discharge hole 712 has the same diameter along the length direction of the plate 710. For example, the portion of the discharge hole 712 corresponding to the bottom surface of the discharge plate 710 is defined as the discharge end 712a, and the portion of the discharge hole 712 corresponding to the top surface of the discharge plate 710 is defined as the inner end 712b. The discharge end 712a is more frequently exposed to the process gas than the inner end 712b. Therefore, the amount of gas etching of the discharge end 712a is greater than the amount of gas etching of the inner end 712b. Therefore, the discharge end 712a may have a diameter larger than the diameter of the inner end 712b.

[0046] The distribution plate 730 heats the process gas and distributes the heated gas to the discharge holes respectively located in the regions. The distribution plate 730 is located above the discharge plate 710. The distribution plate 730 includes an upper plate 740, a partition plate 738 and a heater 750. The upper plate 740 has a partial disc shape similar to the discharge plate 710. The upper plate 740 has different regions, and the different regions have different heights. The bottom surface of the upper plate 740 has an edge region, which has a vertical height different from the vertical height of the central region of the upper plate 740. The bottom surface of the upper plate 740 may have an edge region, which has a vertical height higher than the vertical height of the central region. Therefore, the upper plate 740 may have a bottom surface, and the edge region of the low surface has a stepped shape. The central region of the bottom surface of the upper plate 740 faces the discharge plate 710 and has a size corresponding to the discharge plate 710. A plurality of extension holes 744 are formed in the central region of the upper plate 740. The upper plate 740 contacts the top surface of the discharge plate 710. The number of extension holes 744 is equal to the number of discharge holes 712. The upper plate 740 is positioned so that when viewed from above, the extension holes 744 and the discharge holes 712 coincide with each other. Each extension hole 744 is formed in a stepwise manner so that the width of its bottom end is less than the width of the top end. Therefore, when viewed laterally, the combination of each extension hole 744 and each discharge hole 712 constitutes a single elongate hole that extends from the top of the upper plate 740 to the bottom of the discharge plate 710.

[0047] The partition plate 738 extends upward from the top surface of the upper plate. The partition plate 738 divides the top surface of the upper plate into a plurality of partitioned areas. The partition plate 738 is implemented as a plurality of concentric rings. The partitioned areas may include a first area 734, a second area 735, and a third area 736. The first area 734 is an area including a center, the second area 735 is an area surrounding the first area 734, and the third area 736 is an area surrounding the second area 735. Each area is implemented as a space defined by the upper plate, the partition plate 738, and the introduction plate 770.

[0048] The heater 750 is located inside the upper plate 740. For example, the heater 750 may be implemented as a heating wire. The heater 750 may be implemented as a coil in a spiral shape.

[0049] The introduction plate 770 supplies the process gas supplied from the gas supply line to each area of ​​the distribution plate 730. The introduction plate 770 is stacked on the top surface of the upper plate 740. The introduction plate 770 has a disc shape having a size corresponding to the size of the top surface of the upper plate 740. The introduction plate 770 and the upper plate 740 can be fastened to each other by bolts and can be in close contact with each other. A plurality of introduction lines are formed in the introduction plate. The plurality of introduction lines are implemented as independent lines and correspond to the areas of the distribution plate 730, respectively. The upper electrode 420 is stacked on the top surface of the introduction plate 770. The upper electrode 420 can generate an electromagnetic field with the lower electrode.

[0050] The cooling member is provided in the introduction plate 770. The cooling member has a cooling fluid channel 790 formed inside the introduction plate 770. The cooling fluid channel 790 is implemented as a channel through which cooling water or cooling fluid flows. The cooling water or cooling fluid prevents the distribution plate 730 and the discharge plate 710 from being heated to a temperature higher than a limit temperature.

[0051] The gas block 800 supplies process gas to each area of ​​the distribution plate 730, and the gas block 800 is installed on the showerhead unit 600. In this embodiment, the gas block 800 is installed on the upper electrode 420. The gas block 800 includes a main body 820 and a plurality of regulators. The main body 820 has a fluid channel extending from the introduction end to a plurality of branch ends defined therein. The fluid channel can extend from the introduction end, then branch from the branch point and extend to the branch end. The regulators are respectively installed in the fluid channels branched from the branch point and extending to the branch end. For example, the fluid channel connected to the first area 734 can be defined as the first fluid channel 822, and the fluid channel connected to the second area 735 can be defined as the second fluid channel 824, and the fluid channel connected to the third area 736 can be defined as the third fluid channel 826. Each regulator adjusts the flow rate of the process gas flowing in each fluid channel. The regulator can adjust the flow rate of the process gas so that the flow rates of the process gas to be supplied to the area are different from each other. For example, the first regulator 832 is installed in the first fluid channel 822, the second regulator 842 is installed in the second fluid channel 824, and the third regulator 852 is installed in the third fluid channel 826. For ease of description, the flow rate of the process gas flowing in the fluid channel is defined as the supply flow rate. The flow rate of the process gas discharged from the discharge hole 712 is defined as the discharge flow rate.

[0052] The controller 900 controls the regulators 832, 842, and 852 independently. Due to damage or deformation of the discharge hole 712, the discharge hole 712 may have different sizes. Therefore, the discharge hole 712 may have different flow rates. Therefore, the controller 900 controls the regulators 832, 842, and 852 to compensate for the difference between the discharge rates of the discharge holes 712 in the region. In one embodiment, the controller 900 may allow the supply flow rates of the process gas to be supplied to different regions to be different from each other, so that the discharge flow rate of the process gas to be discharged from the discharge hole 712 may be uniform. As the diameter of the corresponding discharge hole 712 increases, the controller 900 may increase the supply flow rate of the process gas, thereby compensating for the reduction in the discharge flow rate that occurs when the diameter of the discharge hole 712 increases.

[0053] When the showerhead unit 600 is arranged in the chamber, the discharge holes 712 have the same diameter. However, during the process of processing a plurality of substrates W, the process gas is discharged hundreds to tens of thousands of times. Therefore, during the discharge process, the process gas etches the discharge plate 710. Moreover, when viewed from above, a portion of the processing space facing the first region 734 has a higher plasma density than other portions of the processing space. Therefore, the degree of damage of the discharge holes 712 connected to the first region 734 is higher than the degree of damage of each discharge hole 712 connected to the second region 735 and the third region 736. As the cumulative number of process times increases, the discharge hole 712 connected to the first region 734 has a larger diameter than the diameter of the other discharge holes 712. The controller 900 may control the regulator so as to supply the process gas flowing in the first fluid channel 822 at a flow rate greater than that of the process gas flowing in the second fluid channel 824. Therefore, the discharge flow rate from the discharge hole 712 corresponding to the first region 734 and from another discharge hole 712 corresponding to another region may be uniform.

[0054] Hereinafter, a process of processing a substrate W using a substrate processing apparatus as described above will be described. A nozzle unit is installed in a chamber, the nozzle unit having a discharge hole 712 of the same diameter defined therein. The first substrate to the Nth substrate are sequentially processed using a process gas. When the first substrate is processed using a gas, the supply flow rates of the first fluid channel 822, the second fluid channel 824, and the third fluid channel 826 are equal to each other. The discharge holes 712 have the same diameter so that the process gas is discharged at a uniform discharge flow rate between regions. During the processing of a plurality of substrates W, the discharge plate 710 is etched by the process gas. Therefore, each discharge hole 712 has a larger diameter than when processing the first substrate. Therefore, when processing the Nth substrate, the supply flow rate of the gas to be supplied to each region is larger than when processing the first substrate. Therefore, the process gas to be discharged to the first substrate and the process gas to be discharged to the Nth substrate can be discharged at the same discharge flow rate.

[0055] In addition, the exhaust hole 712 has different etching amounts based on its position. For example, the etching amount of the exhaust hole 712 located in the central area is greater than the etching amount of other areas. This means that the central area of ​​the processing space has a higher gas density than the gas density of other areas, so that the exhaust hole 712 in the central area can have an etching amount greater than the etching amount of other areas. Therefore, the exhaust hole 712 in the central area has a larger diameter than the diameter of the exhaust hole 712 in another area. Therefore, the supply flow rate of the process gas to be supplied to the first area 734 can be controlled to be higher than the supply flow rate of the supply gas to be supplied to each other area. Therefore, the exhaust rate of the process gas to be discharged from the exhaust hole 712 in the central area can be equal to the exhaust rate of the process gas to be discharged from the exhaust hole 712 in each other area.

[0056] According to an embodiment of the inventive concept, even when sizes of discharge holes corresponding to different regions are different from each other, compensation for differences between flow rates of gas to be supplied to the discharge holes may allow the discharge rate of the gas to be uniform between different regions.

[0057] Effects of the inventive concept are not limited to the above-mentioned effects, and those skilled in the art will clearly understand unmentioned effects from the present specification and the accompanying drawings.

[0058] Although the present invention has been described with reference to exemplary embodiments, it is apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention. Therefore, it should be understood that the above embodiments are not restrictive, but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a chamber having a processing space for processing the substrate; a substrate supporting unit, the substrate supporting unit being used to support the substrate in the processing space; a gas supply unit for supplying gas into the processing space; and a plasma source for generating plasma from the gas supplied to the processing space, Wherein, the gas supply unit comprises: a shower head unit disposed in a top portion of the chamber so as to avoid the substrate supporting unit, wherein a plurality of exhaust holes are defined in the shower head unit, wherein the gas is exhausted through the exhaust holes, and a gas block for supplying the gas to the showerhead unit, The nozzle unit has a separation area defined in the nozzle unit, and the separation areas are respectively connected to the discharge holes. wherein the gas block supplies the gas to the separated areas at different flow rates; The apparatus further comprises a controller configured to control the gas block, Wherein, when viewed from above, the separation area includes: a first region containing the center; and a second area surrounding the first area, Wherein, the gas block comprises: a body having a first fluid channel defined therein and a second fluid channel defined therein, the first fluid channel connected to the first region and the second fluid channel connected to the second region; a first regulator, the first regulator being used to adjust a flow rate of the gas flowing in the first fluid channel to a first flow rate; a second regulator, the second regulator being used to adjust a flow rate of the gas flowing in the second fluid channel to a second flow rate; The controller is configured to control the first regulator to increase the first flow rate as the number of processes for processing the substrate increases.

2. The device according to claim 1, in, The controller is configured to control the first regulator and the second regulator so that the first flow rate and the second flow rate are different from each other.

3. The device according to claim 2, wherein: The controller is configured to control the first regulator and the second regulator such that the first flow rate is higher than the second flow rate.

4. The device according to claim 1, wherein: The controller is configured to control the second regulator to increase the second flow rate as the number of processes for processing the substrate increases.

5. The device according to claim 4, wherein: The controller is configured to control the first regulator and the second regulator to increase the first flow rate and the second flow rate, respectively, so that a flow rate of the gas to be supplied to the space between the shower head unit and the substrate supporting unit is constant.

6. A method for processing a substrate, the method comprising: exhausting a process gas from a first area and a second area defined in a showerhead unit toward a substrate, thereby processing the substrate using the process gas, wherein flow rates of the gas to be supplied to the first region and the second region, respectively, are different from each other; wherein, when viewed from above, the first region includes a center and the second region surrounds the first region, wherein the process gas is supplied to the first region at a first flow rate and is supplied to the second region at a second flow rate; wherein the substrate comprises a first substrate to an N-th substrate, N is a natural number greater than 2, wherein processing the substrate using the process gas comprises sequentially processing the first substrate to the N-th substrate using the process gas, The first flow rate during the process of processing the Nth substrate is higher than the first flow rate during the process of processing the first substrate.

7. The method according to claim 6, wherein: The second flow rate is lower than the first flow rate.

8. The method according to any one of claims 6 to 7, wherein: The process gas includes an etching gas to etch the substrate.

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