Heating components and silicon wafer processing equipment

Abstract

This invention proposes a heating assembly and a silicon wafer processing device. The heating assembly includes: a plate; a heating element disposed at the bottom of the plate; and a stress groove provided at the top of the plate, wherein the stress groove is a blind groove. Through the technical solution of this invention, the temperature uniformity of the heating assembly is effectively improved, plate deformation is reduced, the service life of the heating element is extended, and the operational stability of the heating element is enhanced.

Description

Technical Field

[0001] This invention relates to the field of solar cell manufacturing technology, and more specifically, to a heating component and a silicon wafer processing equipment. Background Technology

[0002] In PECVD (Plasma Enhanced Chemical Vapor Deposition) coating equipment, the temperature and overall uniformity of the silicon wafers on the carrier directly affect the film formation effect on the silicon wafers, and ultimately affect the conversion efficiency of the solar cells. The temperature and uniformity of the silicon wafers are mainly determined by the heaters inside the equipment.

[0003] In PECVD coating equipment, to achieve high throughput, the carrier plates for placing silicon wafers are becoming increasingly larger, and correspondingly, the aluminum plate heaters are also becoming larger. Due to the high coefficient of thermal expansion of aluminum, the aluminum plate heater expands unevenly due to temperature differences between the upper and lower surfaces, causing stress concentration and leading to deformation. Simultaneously, due to interference between the different heating zones within the aluminum plate heater, maintaining overall temperature uniformity becomes increasingly difficult. Furthermore, the presence of corrosive gases in the process gases causes the heating wires in the heater to corrode and rust, severely impacting the heater's heating efficiency. Summary of the Invention

[0004] The embodiments of the present invention are intended to at least improve one of the technical problems existing in the prior art or related art.

[0005] In view of this, one object of the present invention is to provide a heating assembly.

[0006] Another object of the present invention is to provide a silicon wafer processing apparatus.

[0007] To achieve the above objectives, a heating assembly is provided according to an embodiment of the first aspect of the present invention, comprising: a plate; a heating element disposed at the bottom of the plate; and a stress groove provided at the top of the plate, wherein the stress groove is a blind groove.

[0008] In this technical solution, by setting stress grooves on the top of the plate, it is convenient to transmit and concentrate stress caused by temperature difference through stress blocking, which helps to reduce the deformation of the plate caused by stress and improve the temperature uniformity of the plate.

[0009] Specifically, a heating element is placed at the bottom of the board to provide a heat source, thus achieving the heating function. Positioning the heating element at the bottom, rather than the top, avoids direct contact with the silicon wafers to be heated on the top, preventing damage from overheating. Simultaneously, placing the heating element at the bottom allows for heat transfer through the board, improving temperature uniformity and ensuring even heating of multiple silicon wafers on the heating assembly. Stress grooves are located at the top of the board to prevent the concentration and transmission of thermal stress, reducing board deformation and improving temperature uniformity. The stress grooves are designed as blind grooves, resulting in a relatively thinner board at the groove location. This effectively blocks stress and reduces stress concentration while maintaining a degree of continuity, facilitating heat transfer and improving temperature uniformity.

[0010] In the above technical solution, there are multiple stress grooves. Among the multiple stress grooves, some stress grooves are arranged horizontally on the plate, and other stress grooves are arranged vertically on the plate.

[0011] In this technical solution, multiple stress grooves are used, with some grooves arranged laterally on the plate and others arranged longitudinally. This means the orientation of the multiple stress grooves is not entirely the same. By arranging the multiple stress grooves in different directions, it is beneficial to reduce the stress in various directions on the plate, further reducing the deformation of the plate caused by temperature differences.

[0012] In any of the above technical solutions, the bottom of the plate is also provided with a storage groove, and the heating element is located in the storage groove.

[0013] In this technical solution, by setting a storage groove at the bottom of the plate and placing the heating element inside the storage groove, the overall space occupied by the plate can be reduced. Furthermore, placing the heating element inside the storage groove increases the contact area between the heating element and the plate, which helps to increase the amount of heat generated by the heating element absorbed by the plate, thereby improving heating efficiency.

[0014] In any of the above technical solutions, the bottom of the plate is provided with multiple heating zones; each heating zone is provided with a heating element; the plate is also provided with a partition groove, and a partition groove is provided between adjacent heating zones, the partition groove penetrating the top and bottom of the plate.

[0015] In this technical solution, the partition groove runs through the top and bottom of the plate, meaning it is a through groove. By setting the partition groove, or through groove, there are only a few connections between the heating zones, reducing heat transfer between them and minimizing mutual interference. Furthermore, the partition groove helps to further reduce stress concentration and transmission, thereby reducing plate deformation. It should also be noted that by setting multiple heating zones, different heating effects are generated at different locations on the plate, improving the overall temperature uniformity of the plate.

[0016] In the above technical solution, there are multiple partition grooves, which are distributed at intervals.

[0017] In this technical solution, by setting multiple partition grooves and distributing them at intervals, the strength of the board can be significantly reduced due to the excessive length of a single partition groove. Furthermore, the position and number of partition grooves can be flexibly set to improve the temperature uniformity of the board.

[0018] In the above technical solution, multiple heating zones are distributed sequentially from the inside to the outside on the plate.

[0019] In this technical solution, multiple heating zones are distributed sequentially from the inside to the outside on the plate, rather than in the left-right or front-back direction. This helps to avoid the phenomenon of one end of the plate being overheated while the other end is undercooled, thereby improving the temperature uniformity of the plate.

[0020] In the above technical solution, the number of heating elements in multiple heating zones gradually increases from the inside to the outside.

[0021] In this technical solution, the number of heating elements gradually increases from the inside out, which helps to improve the temperature uniformity of the plate. Specifically, because the outer surface of the plate has a larger contact area with the air, more heat is exchanged with the air. To maintain the temperature uniformity of the plate, more heat needs to be added to the parts of the plate closer to the edge. Therefore, by increasing the number of heating elements from the inside out, more heat can be added to the parts of the plate closer to the edge, thereby improving the temperature uniformity of the plate.

[0022] In any of the above technical solutions, the heating component further includes: an air-isolating component, which is located at the bottom of the plate and covers the storage groove, and the air-isolating component is used to protect the heating component.

[0023] In this technical solution, by setting up a gas-isolating component to protect the heating element, the corrosive gases in the processing chamber can be reduced during the process, thus extending the service life of the heating element and improving its operational stability and heating effect. The gas-isolating component, covering the receiving tank, effectively blocks process gases, forming a protective barrier.

[0024] In the above technical solution, the heating assembly also includes: an outlet sealing flange, located at the bottom of the plate, with both ends of the heating element leading out from the outlet sealing flange.

[0025] In this technical solution, by setting an outlet sealing flange and leading both ends of the heating element out from the outlet sealing flange, it is easy to connect the heating element to the power supply, so as to realize the heating function of the heating element through the conversion of electrical energy into heat energy. At the same time, the setting of the outlet sealing flange helps to seal the processing cavity when the heating component is installed into the processing cavity, preventing ordinary air from entering the processing cavity.

[0026] According to an embodiment of the second aspect of the present invention, a silicon wafer processing apparatus is provided, comprising: a processing cavity; and a heating component as described in any of the technical solutions of the first aspect above, wherein at least a portion of the heating component is disposed within the processing cavity, and the heating component is used to heat the silicon wafer within the processing cavity.

[0027] In this technical solution, by employing the heating component of any of the aforementioned technical solutions, all the beneficial effects of the above-mentioned solutions are achieved, and will not be elaborated further here. By setting up a processing chamber, a relatively enclosed environment is provided during the heating of the silicon wafer, reducing heat loss and improving heating efficiency. Furthermore, the processing chamber can be filled with special process gases to achieve other processing effects on the silicon wafer while heating. The processing chamber also reduces interference from external impurities, ensuring that the processing environment meets process requirements.

[0028] Additional aspects and advantages of embodiments of the invention will become apparent in the following description or may be learned by practice of embodiments of the invention. Attached Figure Description

[0029] Figure 1 This is a partial structural schematic diagram of a heating assembly according to an embodiment of the present invention;

[0030] Figure 2 yes Figure 1 A schematic diagram of the cross-sectional structure along the AA direction;

[0031] Figure 3 yes Figure 2 An enlarged structural diagram of part B in the diagram;

[0032] Figure 4 This is a cross-sectional structural schematic diagram of a heating assembly according to an embodiment of the present invention;

[0033] Figure 5 yes Figure 4 An enlarged structural diagram of part C in the diagram;

[0034] Figure 6This is a cross-sectional structural schematic diagram of a silicon wafer processing apparatus according to an embodiment of the present invention.

[0035] in, Figures 1 to 6 The correspondence between the reference numerals and component names in the attached drawings is as follows:

[0036] 10 Heating component, 100 Plate, 102 Stress groove, 104 Storage groove, 106 Partition groove, 110 First heating zone, 112 Second heating zone, 114 Third heating zone, 140 Heating element, 160 Air-proof element, 180 Outlet sealing flange, 20 Silicon wafer processing equipment, 200 Processing cavity, 202 Support column. Detailed Implementation

[0037] To better understand the above-described objects, features, and advantages of the embodiments according to the present invention, the embodiments according to the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, unless otherwise specified, the features of the embodiments according to the present invention can be combined with each other.

[0038] Numerous specific details are set forth in the following description in order to provide a full understanding of embodiments of the invention. However, embodiments of the invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection provided by embodiments of the invention is not limited to the specific embodiments disclosed below.

[0039] The following reference Figures 1 to 6 Some embodiments provided by the present invention are described below.

[0040] like Figures 1 to 5 As shown, a heating assembly 10 according to an embodiment of the first aspect of the present invention is used for heating a silicon wafer. Figure 4 and Figure 5 As shown, the heating assembly 10 includes a plate 100 and a heating element 140. The heating element 140 is located at the bottom of the plate 100. A stress groove 102 is provided at the top of the plate 100. The stress groove 102 is a blind groove.

[0041] In this embodiment, by providing a stress groove 102 on the top of the plate 100, it is convenient to transmit and concentrate the stress caused by temperature difference through stress blocking, thereby reducing the deformation of the plate 100 caused by stress and improving the temperature uniformity on the plate 100.

[0042] like Figure 2 As shown, it should be noted that the top and bottom of the plate 100 are located in the thickness direction of the plate 100.

[0043] like Figure 5As shown, specifically, a heating element 140 is provided at the bottom of the board 100 to provide a heat source for the board 100, thereby achieving the heating function. The heating element 140 is located at the bottom of the board 100, rather than at the top, to avoid direct contact with the components to be heated on the top of the board 100, thus preventing damage to the components due to excessive temperature. Simultaneously, the heating element 140's location at the bottom of the board 100 also allows for heat transfer through the board 100, improving the temperature uniformity of the board 100 itself, thereby ensuring that the multiple silicon wafers on the heating assembly 10 are heated uniformly. The stress groove 102 is located at the top of the board 100 to prevent the concentration and transmission of temperature stress, reduce deformation of the board 100, and improve the temperature uniformity of the board 100. The stress groove 102 is set as a blind groove, so that the thickness of the plate 100 is relatively reduced at the position of the stress groove 102. This can play a role in blocking stress and reducing stress concentration, while also ensuring that the plate 100 still has a certain degree of continuity, which is conducive to heat transfer and improves the temperature uniformity of the plate 100.

[0044] Furthermore, there are multiple stress grooves 102. Among the multiple stress grooves 102, some stress grooves 102 are arranged laterally on the plate 100, and other stress grooves 102 are arranged longitudinally on the plate 100.

[0045] In this embodiment, the number of stress grooves 102 is set to multiple, with some stress grooves 102 arranged laterally on the plate 100 and others arranged longitudinally on the plate 100. That is, the multiple stress grooves 102 are arranged in different directions. By arranging the multiple stress grooves 102 in different directions, it is beneficial to reduce the stress in various directions on the plate 100, and further reduce the deformation of the plate 100 caused by temperature difference.

[0046] In other embodiments, all of the stress grooves 102 are arranged laterally or all are arranged longitudinally.

[0047] It should be noted that, in the embodiments of the present invention, the specific directions of the horizontal and vertical arrangement are not specifically limited, but only indicate that the orientation of the multiple stress grooves 102 is different.

[0048] like Figure 2 and Figure 3 As shown, in any of the above embodiments, the bottom of the plate 100 is also provided with a storage groove 104. The heating element 140 is disposed in the storage groove 104.

[0049] In this embodiment, by providing a storage groove 104 at the bottom of the plate 100 and placing the heating element 140 within the storage groove 104, the overall space occupied by the plate 100 can be reduced. Furthermore, placing the heating element 140 within the storage groove 104 increases the contact area between the heating element 140 and the plate 100, which helps to increase the amount of heat generated by the heating element 140 absorbed by the plate 100, thereby improving heating efficiency.

[0050] In some embodiments, the heating element 140 is a heating wire. For example... Figure 1 As shown, the receiving groove 104 is arranged in a tortuous manner on the plate 100, and the heating wire is arranged accordingly in a tortuous manner following the shape of the receiving groove 104. By arranging the receiving groove 104 in a tortuous manner, it is possible to heat most of the plate 100 with only one heating wire. Moreover, by using a single heating wire, only one power source is needed to achieve the purpose of heating the wire, which helps to simplify the structure.

[0051] In other embodiments, there are multiple heating elements 140, each independently configured. It is understood that there may also be only one storage slot 104, containing multiple heating elements 140. Alternatively, there may be multiple storage slots 104, each containing one heating element 140.

[0052] In any of the above embodiments, the bottom of the plate 100 is further provided with multiple heating zones. Each heating zone is provided with a heating element 140. Furthermore, the number of heating elements 140 provided in adjacent heating zones is different. Figure 1 and Figure 3 As shown, the plate 100 is also provided with a partition groove 106. A partition groove 106 is provided between adjacent heating zones, and the partition groove 106 penetrates through the top and bottom of the plate 100.

[0053] In this embodiment, the partition groove 106 penetrates through the top and bottom of the plate 100, meaning the partition groove 106 is a through groove. By setting the partition groove 106, i.e., the through groove, only a few connections are made between the heating zones, reducing heat transfer between the heating zones and minimizing mutual interference. In addition, the partition groove 106 helps to further reduce stress concentration and transmission, thereby reducing deformation of the plate 100. It should also be noted that by setting multiple heating zones, and the number of heating elements 140 in each heating zone being different, that is, depending on the size, shape, material, wall thickness, and other factors of the plate 100, different numbers of heating elements 140 can be set at different positions on the plate 100, thereby producing different heating effects at different positions on the plate 100 and improving the overall temperature uniformity of the plate 100.

[0054] It should be noted that the number of heating elements 140 set on adjacent heating zones is different. The number here cannot be simply understood as the quantity, or the definition of the quantity here is not limited to the number, but can also include length, area, etc.

[0055] In other embodiments, the number of heating elements 140 provided on adjacent heating zones is the same, but the types of heating elements 140 may be different, thus having different heating powers, thereby achieving different heating effects in adjacent heating zones. In still other embodiments, the number of heating elements 140 provided on adjacent heating zones is the same, but the heating methods of the heating elements 140 are different.

[0056] like Figure 1 As shown, specifically, the heating element 140 is a heating wire. The plate 100 is provided with a first heating zone 110, a second heating zone 112, and a third heating zone 114. There is only one heating wire, which is arranged in a winding manner throughout the entire plate. In different heating zones, the number of times the heating wire winds and turns is different, and its length is also different, resulting in different heating effects.

[0057] In the above embodiments, there are multiple partition grooves 106. These multiple partition grooves 106 are distributed at intervals. The interval distribution of the partition grooves 106 can prevent a single partition groove 106 from being too long, which would significantly weaken the strength of the plate 100. Furthermore, the position and number of the partition grooves 106 can be flexibly set to improve the temperature uniformity on the plate 100.

[0058] In the above embodiment, multiple heating zones are distributed sequentially from the inside to the outside on the plate 100. Specifically, as follows... Figure 1 As shown, the plate 100 is provided with a first heating zone 110, a second heating zone 112 and a third heating zone 114 from the inside to the outside.

[0059] In this embodiment, multiple heating zones are distributed sequentially from the inside to the outside on the plate 100, rather than in the left-right or front-back direction. This helps to avoid the phenomenon of one end of the plate 100 being overheated while the other end is undercooled, thereby improving the temperature uniformity of the plate 100.

[0060] Furthermore, the number of heating elements 140 in the multiple heating zones gradually increases from the inside out. Specifically, in some embodiments, the heating element 140 is a heating wire, which is distributed in a tortuous manner on the plate 100. In the first heating zone 110, the heating wires have fewer tortuous turns, lower density, and the shortest length per unit area. In the third heating zone 114, the heating wires have more tortuous turns, higher density, and longest length per unit area.

[0061] In this embodiment, the number of heating elements 140 gradually increases from the inside out, which helps to improve the temperature uniformity of the plate 100. Specifically, since the outer surface of the plate 100 has a larger contact area with the air, more heat is exchanged with the air. To maintain the temperature uniformity of the plate 100, the portion of the plate 100 closer to the edge needs more additional heat. Therefore, by increasing the number of heating elements 140 from the inside out, it is beneficial to supplement more heat to the portion of the plate 100 closer to the edge, thereby improving the temperature uniformity of the plate 100.

[0062] like Figure 4 and Figure 5 As shown, in any of the above embodiments, the heating assembly 10 further includes an air barrier 160. The air barrier 160 is disposed at the bottom of the plate 100 and covers the receiving groove 104. The air barrier 160 is used to protect the heating element 140.

[0063] In some embodiments, the air barrier 160 and the plate 100 are made of the same material. For example, both the plate 100 and the air barrier 160 are made of aluminum. Furthermore, the area of ​​the air barrier 160 is the same as that of the plate 100, allowing it to directly cover all the storage slots 104 on the plate 100, resulting in a simple structure and ease of manufacturing. Additionally, the fact that the air barrier 160 covers the plate 100 as a single piece provides reinforcement, improving the strength of the plate 100 and reducing its deformation.

[0064] In this embodiment, by providing a gas-isolating component 160 to protect the heating component 140, the corrosive gases within the processing chamber 200 can be reduced during the process, thus extending the service life of the heating component 140 and improving its operational stability and heating effect. The gas-isolating component 160 covers the receiving groove 104, effectively blocking process gases and providing protection for the component.

[0065] In other embodiments, there are multiple air-blocking elements 160, each air-blocking element 160 individually covering a storage slot 104.

[0066] like Figure 2 and Figure 4 As shown, in the above embodiment, the heating assembly 10 further includes a cable outlet sealing flange 180. The cable outlet sealing flange 180 is located at the bottom of the plate body 100. Both ends of the heating element 140 extend from the cable outlet sealing flange 180.

[0067] In this embodiment, by providing an outlet sealing flange 180 and extending both ends of the heating element 140 from the outlet sealing flange 180, it is convenient to connect the heating element 140 to the power supply, so that the heating element 140 can achieve its heating function through the conversion of electrical energy into heat energy. At the same time, the outlet sealing flange 180 helps to seal the processing cavity 200 when the heating assembly 10 is installed in the processing cavity 200, preventing ordinary air from entering the processing cavity 200.

[0068] like Figure 6 As shown, according to an embodiment of the second aspect of the present invention, a silicon wafer processing apparatus 20 is provided, including: a processing cavity 200 and a heating assembly 10 as described in any embodiment of the first aspect above. At least a portion of the heating assembly 10 is disposed within the processing cavity 200. The heating assembly 10 is used to heat the silicon wafer within the processing cavity 200.

[0069] In this embodiment, by employing the heating component 10 of any of the above embodiments, all the beneficial effects of the above embodiments are achieved, and will not be repeated here. By providing the processing chamber 200, a relatively enclosed environment is provided during the heating of the silicon wafer, reducing heat loss and improving heating efficiency. Furthermore, the processing chamber 200 can be filled with special process gases to achieve other processing effects on the silicon wafer while heating. The processing chamber 200 also reduces interference from external impurities, ensuring that the processing environment meets process requirements.

[0070] like Figure 6 As shown, the outlet sealing flange 180 of the heating assembly 10 is located outside the processing cavity 200 and is used to seal the processing cavity 200.

[0071] A heating assembly 10 according to a specific embodiment of the present invention includes a plate 100, which is made of aluminum, iron, or copper. Stress grooves 102 are machined on the plate 100 to prevent stress concentration. The stress grooves 102 are blind grooves. Simultaneously, through-hole partition grooves 106 are machined on the plate 100 according to the distribution range of the heating zones to reduce physical contact between the heating zones. A thin plate is attached to the bottom of the plate 100, where the heating wire is embedded, as a gas barrier 160 to protect the heating wire and reduce contact between the heating wire and corrosive gases.

[0072] In this specific embodiment, a storage groove 104 is machined on the back side (bottom) of the aluminum plate 100 according to the designed heating zone distribution, and the heating wire is embedded in the storage groove 104. A series of intersecting stress grooves 102 are machined on the front side (top) of the plate 100. Thus, when the plate 100 expands, the presence of the stress grooves 102 greatly reduces irregular upward warping and other deformations of the plate 100 caused by stress concentration.

[0073] In this specific embodiment, the aluminum plate 100 is processed with a series of through-holes 106 according to the heating zone, so that there are only a few intermittent connections between the heating zones, thereby greatly reducing the heat transfer between the corresponding plates 100 in different heating zones, greatly reducing the interference between different heating zones, and better ensuring the temperature uniformity of the entire plate.

[0074] In this specific embodiment, the heating assembly 10 has a thin aluminum plate attached to the surface of the plate 100 where the heating wire is embedded, meaning a gas barrier 160 is provided at the bottom of the plate 100. This encloses the heating wire between the plate 100 and the gas barrier 160, significantly reducing contact between the heating wire and corrosive gases. Corrosion of the heating wire is greatly slowed, ensuring good heating performance while extending the lifespan of the plate 100.

[0075] like Figure 4 and Figure 5 As shown, the heating assembly 10 includes a heating wire (i.e., heating element 140), an air-sealing element 160, and a wire outlet sealing flange 180. The heating wire is the heat source, and the plate 100 is the external heat radiator. A series of heating wire grooves, also known as storage grooves 104, are machined on the back of the plate 100. The heating wire is embedded inside the heating wire grooves.

[0076] When the heating assembly 10 is installed in the silicon wafer processing equipment 20, the silicon wafer processing equipment 20 includes a support column 202, and the plate 100 is supported by the support column 202 and fixed inside the processing cavity 200 (or other fixed object). The heating assembly 10 achieves isolation between the vacuum environment inside the cavity (or other fixed object) and the atmosphere through the outlet sealing flange 180.

[0077] like Figure 3 and Figure 5 As shown, the top of the plate 100 is machined with intersecting horizontal and vertical stress grooves 102, with a depth of 4mm to 6mm, for example, 4mm, 5mm, or 6mm, depending on the plate thickness. A heating element 140 is embedded in a receiving groove 104 on the bottom of the plate 100. When the heating element 140 heats up, it heats the plate 100. Because there is a temperature difference between the bottom and top of the plate 100, the presence of the stress grooves 102 greatly reduces stress concentration on the plate 100, thus reducing irregular deformation of the plate 100.

[0078] like Figure 1As shown, multiple partition grooves 106 are machined on the plate 100 between the first heating zone 110 and the second heating zone 112, and between the second heating zone 112 and the heating zone. Specifically, the first heating zone 110 has multiple continuous and discontinuous partition grooves 106 in its circumferential direction. The second heating zone 112 also has multiple continuous and discontinuous partition grooves 106 in its circumferential direction. The partition grooves 106 penetrate the entire thickness of the plate 100, greatly reducing the physical connection between the heating zones, significantly improving the mutual temperature interference between the heating zones, making the plate 100 more temperature-uniform overall, and also facilitating temperature adjustment.

[0079] like Figure 5 As shown, a gas-isolating component 160 is tightly installed at the bottom of the plate 100, and the heating element 140 is enclosed and protected between the plate 100 and the gas-isolating component 160. The plate 100 is an aluminum plate, and the gas-isolating component 160 is a thin aluminum plate; both are made of the same material. By setting the gas-isolating component 160, the contact between the heating element 140 and the corrosive gases generated during the process is greatly reduced, significantly improving the corrosion and rusting of the heating element 140, and greatly improving the heating performance and the lifespan of the heating assembly 10.

[0080] The heating assembly 10 can be fixed to any side wall, top surface, or bottom surface of the processing cavity 200 by a fixing device, such as a support column 202. The partition groove 106 is a through groove that penetrates the bottom and top of the plate, so the location of the partition groove 106 should avoid the location of the heating wire groove.

[0081] like Figure 1 As shown, the partition groove 106 can be arranged in a ring, and the plate 100 is provided with at least one ring partition groove 106, dividing the plate 100 into two heating zones. Alternatively, there can be two ring partition grooves 106, dividing the plate 100 into three heating zones.

[0082] The embodiments provided by the present invention have been described in detail above with reference to the accompanying drawings. Through the above embodiments, the temperature uniformity of the heating component is effectively improved, the deformation of the plate is reduced, the service life of the heating element is extended, and the working stability of the heating element is improved.

[0083] In embodiments of the present invention, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance; the term "multiple" refers to two or more unless otherwise expressly defined. The terms "install," "connect," "link," and "fix" should be interpreted broadly. For example, "connect" can be a fixed connection, a detachable connection, or an integral connection; "link" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in embodiments of the present invention according to the specific circumstances.

[0084] In the description of the embodiments of the present invention, it should be understood that the terms "left", "right", "front", "rear", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and are not intended to indicate or imply that the device or unit referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention.

[0085] In the description of this specification, the terms "one embodiment," "some embodiments," "specific embodiment," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0086] The above are merely preferred embodiments of the present invention and are not intended to limit the embodiments of the present invention. For those skilled in the art, various modifications and variations can be made to the embodiments of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of the present invention should be included within the protection scope of the embodiments of the present invention.

Claims

1. A heating assembly, characterized in that, include: Plate(100); A heating element (140) is disposed at the bottom of the plate (100); The top of the plate (100) is provided with a stress groove (102). The stress groove (102) is a blind groove; The number of stress grooves (102) is multiple. Among the multiple stress grooves (102), some of the stress grooves (102) are arranged horizontally on the plate (100), and other stress grooves (102) are arranged vertically on the plate (100). The bottom of the plate (100) is also provided with a storage groove (104), and the heating element (140) is disposed in the storage groove (104); The bottom of the plate (100) is also provided with multiple heating zones; Each of the heating zones is provided with a heating element (140); The plate (100) is also provided with a partition groove (106), and the partition groove (106) is provided between adjacent heating zones. The partition groove (106) penetrates the top and bottom of the plate (100). The number of heating elements (140) in the plurality of heating zones gradually increases from the inside to the outside; The number of heating elements installed on adjacent heating zones is different; The heating element includes a heating wire, and the receiving groove is arranged in a tortuous manner on the plate body, with the heating wire correspondingly arranged in a tortuous manner following the shape of the receiving groove; The heating wire bends and twists a different number of times in different heating zones.

2. The heating assembly according to claim 1, characterized in that, The number of partition grooves (106) is multiple, and the multiple partition grooves (106) are distributed at intervals.

3. The heating assembly according to claim 1, characterized in that, The multiple heating zones are distributed sequentially from the inside to the outside on the plate (100).

4. The heating assembly according to claim 1, characterized in that, Also includes: An air-isolating element (160) is disposed at the bottom of the plate (100) and covers the storage groove (104). The air-isolating element (160) is used to protect the heating element (140).

5. The heating assembly according to claim 4, characterized in that, Also includes: A line-out sealing flange (180) is provided at the bottom of the plate (100), and both ends of the heating element (140) are led out from the line-out sealing flange (180).

6. A silicon wafer processing equipment, characterized in that, include: Machining cavity (200); The heating assembly as described in any one of claims 1 to 5, wherein at least a portion of the heating assembly is disposed within the processing cavity (200), and the heating assembly (10) is used to heat the silicon wafer within the processing cavity (200).

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