Mask, mask defect repair method, mask use method and semiconductor structure

Abstract

A mask, a method for repairing mask defects, a method for using a mask, and a semiconductor structure, wherein the method for repairing mask defects comprises: providing a substrate, the substrate comprising a first region and a second region surrounding the first region, the substrate surface having a light shielding film; performing a first etching on the light shielding film more than once to form a light shielding layer, the light shielding layer having an opening, and the opening exposing the surface of the first region; the first etching comprises: forming a protective layer on the surface of the light shielding film; performing a first electron beam etching process on the protective layer and the light shielding film on the first region. The method can reduce the repair cost of mask defects while reducing etching deviation and improving the success rate of mask defect repair.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a mask, a mask defect repairing method, a mask using method and a semiconductor structure. Background Art

[0002] In the semiconductor manufacturing process, photolithography has always been a very important link, and the mask plays a pivotal role in photolithography. Common mask plates include a transparent substrate, such as a quartz substrate, and a light shielding layer on the substrate, which usually contains metal. The mask plate makes the pattern required in the semiconductor manufacturing process in the light shielding layer, so that the pattern is formed on the silicon wafer through a series of processes.

[0003] During the mask production process, various unpredictable factors, such as the environment, the texture of the quartz substrate, the photoresist, etc., may cause defects in the produced mask. However, since the mask is expensive, it is impossible to discard the defective mask, so the mask usually needs to be repaired.

[0004] However, existing methods for repairing mask defects are costly. Summary of the invention

[0005] The technical problem solved by the present invention is to provide a mask, a mask defect repairing method, a mask using method and a semiconductor structure, so as to reduce the repair cost of the mask defects while reducing the etching deviation and improving the success rate of mask defect repair.

[0006] In order to solve the above technical problems, the technical solution of the present invention provides a method for repairing mask defects, comprising: providing a substrate, the substrate comprising a first area and a second area surrounding the first area, the surface of the substrate having a light-shielding film; performing a first etching on the light-shielding film more than once to form a light-shielding layer, the light-shielding layer having an opening, and the opening exposing the surface of the first area; the first etching comprises: forming a protective layer on the surface of the light-shielding film; performing a first electron beam etching process on the protective layer and the light-shielding film on the first area.

[0007] Optionally, the process parameters of the first electron beam etching process include: an electron beam energy of 0.2Kev to 2Kev, an etching gas used is a fluorine-containing compound, and a flow rate of the etching gas is 1 standard ml / min to 1000 standard ml / min.

[0008] Optionally, the thickness of the light-shielding film on the first region is smaller than the thickness of the light-shielding film on the second region.

[0009] Optionally, the method for forming the light-shielding film includes: forming an initial light-shielding material on the surface of the substrate; and performing a second electron beam etching process on the initial light-shielding material on the first region to form the light-shielding film.

[0010] Optionally, the process parameters of the second electron beam etching include: the energy of the electron beam is 0.2Kev to 2Kev, the etching gas used is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard ml / min to 1000 standard ml / min.

[0011] Optionally, when the first etching is performed twice or more than twice, each first etching method includes: forming a protective layer on the surface of the light-shielding film; performing a first-stage first etching process on the protective layer to remove the protective layer on the first area until the light-shielding film on the first area is exposed; after removing the protective layer on the first area, using the protective layer as a mask, performing a second-stage first etching process on the light-shielding film in the first area until the top surface and side wall surface of the light-shielding film on the second area are exposed, thereby forming an initial light-shielding layer and an initial opening located in the initial light-shielding layer.

[0012] Optionally, the material of the protective layer includes: tetraethoxysilane, carbon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, silicon carbonitride oxide or boron nitride; the process of forming the protective layer includes: chemical vapor deposition process.

[0013] Optionally, the material of the protective layer includes silicon oxide, molybdenum oxide or chromium oxide; and the process of forming the protective layer includes chemical reaction.

[0014] Optionally, the material of the substrate is a light-transmitting material; the light-transmitting material includes: quartz glass.

[0015] Optionally, the material of the substrate is a reflective material; the reflective material includes: one or more of molybdenum, ruthenium, or a composite of molybdenum, ruthenium and silicon.

[0016] Optionally, the material of the light-shielding film includes: chromium or molybdenum silicide.

[0017] Correspondingly, the technical solution of the present invention also provides a mask formed by any of the above methods.

[0018] Correspondingly, the technical solution of the present invention also provides a method for using a mask, including: providing a substrate; forming a photoresist on the surface of the substrate; using the above-mentioned mask to perform an exposure and development process on the photoresist to form a photoresist layer on the surface of the substrate.

[0019] Correspondingly, the technical solution of the present invention also provides a semiconductor structure formed by using the above-mentioned method of using the mask.

[0020] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0021] In the method for repairing mask defects of the technical solution of the present invention, a protective layer is formed on the surface of the light-shielding film. Since the electron beam in the first electron beam etching process will inevitably generate scattered electrons in the process of etching the first area, the scattered electrons will cause etching to the second area surrounding the first area. In addition, the etching rate of the electron beam is greater than the etching rate of the scattered electrons, that is, the etching rate of the first electron beam etching process on the first area is greater than the etching rate on the second area. Therefore, when the first electron beam etching process is performed, the protective layer on the first area can be completely removed by controlling the parameters, thereby exposing the light-shielding film on the first area, while the protective layer on the second area is not completely removed. Afterwards, since the surface of the light-shielding film in the second area still has a protective layer, the first electron beam etching process that is continued causes the light-shielding film on the exposed first area to be etched, and the light-shielding film on the second area will not be etched, thereby reducing the etching deviation. In addition, the process of forming the protective layer is a conventional process with low cost. In summary, the method can reduce the cost of repairing mask defects while reducing etching deviation and improving the success rate of mask defect repair.

[0022] The mask provided by the technical solution of the present invention can reduce the etching deviation during the repair process because the mask defect repair method can make the defects of the formed mask be repaired more accurately, thereby improving the repair rate of the mask.

[0023] The method for using the mask provided by the technical solution of the present invention can reduce the etching deviation during the repair process, so that the accuracy of the exposure and development process of the photoresist using the mask is higher, thereby being able to form a photoresist layer with more accurate graphics, meet the process requirements, and be beneficial to improving the performance of the formed semiconductor structure.

[0024] The semiconductor structure provided by the technical solution of the present invention uses a mask whose defects have been repaired more accurately to perform an exposure and development process on the photoresist, thereby forming a semiconductor structure with higher etching accuracy, so that the formed semiconductor structure has better performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figures 1 to 4 It is a schematic diagram of the cross-sectional structure of each step of a method for repairing a defect of a mask;

[0026] Figures 5 to 11 is a cross-sectional schematic diagram of each step of a method for repairing a mask defect in an embodiment of the present invention;

[0027] Figures 12 to 15The present invention discloses a method for using a mask in accordance with an embodiment of the present invention. DETAILED DESCRIPTION

[0028] As described in the background art, the cost of repairing existing mask defects is high.

[0029] Figures 1 to 4 The present invention is a structural schematic diagram of each step of a mask defect repair method.

[0030] Please refer to Figure 1 to Figure 2 , Figure 2 yes Figure 1 A schematic diagram of a cross-sectional structure along the MN tangent line direction shows a substrate 100 , wherein the substrate 100 comprises an A region and a B region surrounding the A region, and an initial light shielding layer 110 is provided on the surface of the substrate 100 .

[0031] Please refer to Figure 3 to Figure 4 , Figure 3 For Figure 1 Based on the schematic diagram, Figure 4 For Figure 2 Based on the schematic diagram, the initial light shielding layer 110 is etched to form a light shielding layer 120 on the B region, the light shielding layer 120 has an opening 130, and the bottom of the opening 130 exposes the surface of the A region.

[0032] In the above-mentioned mask defect repair method, the electron beam 140 is used in combination with gas to etch the initial light shielding layer 110, thereby forming the light shielding layer 120 and the opening 130 located in the light shielding layer 120. The irradiation area of ​​the electron beam 140 is the C area ( Figure 3 As shown in FIG. 1 , it is expected that the bottom of the opening in the light shielding layer formed by etching with the electron beam 140 in combination with the gas will expose the surface of the C region.

[0033] However, since the electron beam 140 is collided with the surface of the surrounding structure during the emission process, scattered electrons 150 are inevitably generated. The scattered electrons 150 and the gas work together to cause a certain amount of etching, that is, a certain area around the area irradiated by the electron beam 140 is etched by the scattered electrons 150, so that the actually formed opening 130 exposes area A, and the area of ​​area A is larger than area C, resulting in etching deviation.

[0034] In order to solve the above technical problems, the range of electron scattering can be reduced by reducing the electron beam energy, so that the etching deviation is smaller, that is, the area of ​​area A is close to area C. However, while reducing the electron beam energy, in order to ensure the etching accuracy, the requirements for the electron beam control system and machine hardware are high, resulting in higher requirements for machine costs, which increases the cost of mask defect repair.

[0035] In order to solve the technical problem, the technical solution of the present invention provides a method for repairing a mask defect, comprising: providing a substrate, the substrate comprising a first area and a second area surrounding the first area, the substrate surface having a light shielding film; performing a first etching on the light shielding film more than once to form a light shielding layer, the light shielding layer having an opening, and the opening exposing the surface of the first area, the first etching comprising: forming a protective layer on the surface of the light shielding film; performing a first electron beam etching process on the protective layer and the light shielding film on the first area. The method can reduce the repair cost of mask defects while improving the repair efficiency of mask defects.

[0036] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0037] Figures 5 to 11 It is a cross-sectional schematic diagram of each step of a method for repairing a mask defect in an embodiment of the present invention.

[0038] Please refer to Figure 5 , providing a substrate 200, wherein the substrate 200 includes a first region I and a second region II surrounding the first region I, and a light shielding film 210 is provided on the surface of the substrate 200.

[0039] The substrate 200 and the light shielding layer subsequently formed on the surface of the substrate 200 together constitute a mask.

[0040] In this embodiment, the substrate 200 is made of a light-transmitting material; the light-transmitting material includes: quartz glass.

[0041] In other embodiments, the material of the substrate is a reflective material; the reflective material includes: one or more of molybdenum, ruthenium, or a composite of molybdenum, ruthenium and silicon.

[0042] The material of the light shielding film can be any suitable material with light shielding properties; the material of the light shielding film includes: chromium or molybdenum silicide. In this embodiment, the material of the light shielding film 210 is molybdenum silicide. A chromium layer is formed on the surface of the substrate 200 by sputtering, thereby forming the light shielding film 210.

[0043] In this embodiment, the thickness of the light shielding film 210 on the first region I is smaller than the thickness of the light shielding film 210 on the second region II.

[0044] The method for forming the light-shielding film 210 includes: forming an initial light-shielding material (not shown in the figure) on the surface of the substrate 200; and performing a second electron beam etching process on the initial light-shielding material on the first region I to form the light-shielding film 210.

[0045] The process parameters of the second electron beam etching include: the energy of the electron beam is 0.2Kev to 2Kev, the etching gas used is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard ml / min to 1000 standard ml / min.

[0046] Specifically, a chemical reaction occurs on the first region I through the combined action of the focused electron beam and the etching gas, so that the thickness of the light shielding film 210 on the first region I is smaller than the thickness of the light shielding film 210 on the second region II.

[0047] In other embodiments, the thickness of the light shielding film on the first region is the same as the thickness of the light shielding film on the second region.

[0048] The light-shielding film is subjected to a first etching process more than once to form a light-shielding layer, wherein the light-shielding layer has an opening, and the opening exposes the surface of the first region I, and the first etching process includes: forming a protective layer on the surface of the light-shielding film 210; and performing a first electron beam etching process on the protective layer and the light-shielding film 210 on the first region I.

[0049] When the first etching is performed twice or more than twice, each first etching method includes: forming a protective layer on the surface of the light-shielding film; performing a first-stage first etching process on the protective layer to remove the protective layer on the first area until the light-shielding film on the first area is exposed; after removing the protective layer on the first area, using the protective layer as a mask, performing a second-stage first etching process on the light-shielding film in the first area until the top surface and side wall surface of the light-shielding film on the second area are exposed, thereby forming an initial light-shielding layer and an initial opening located in the initial light-shielding layer.

[0050] In this embodiment, the first etching is performed twice to form the light shielding layer. For the specific process of forming the light shielding layer, please refer to Figures 6 to 11 .

[0051] In other embodiments, the first etching is performed once or twice or more.

[0052] Please refer to Figure 6 , a protective layer 220 is formed on the surface of the light shielding film 210 .

[0053] In this embodiment, the protection layer 220 is located on the surface of the light shielding film 210 on the first region I and on the sidewall surface and the top surface of the light shielding film 210 on the second region II.

[0054] The thickness of the protective layer 220 ranges from 1 nanometer to 100 nanometers.

[0055] The significance of selecting the thickness range is that: if the thickness is greater than 100 nanometers, on the one hand, there is usually a certain etching deviation in the etching process, the thickness of the protective layer 220 is relatively thick, and the etching time required to remove the protective layer 220 on the first area I is too long, which is not conducive to ensuring the etching accuracy, and further not conducive to repairing the defects of the mask. On the other hand, it is easy to cause cost waste; if the thickness is less than 1 nanometer, it cannot be guaranteed that the shading film 210 on the second area II plays a protective role, which is not conducive to repairing the defects of the mask.

[0056] The material of the protective layer 220 includes: tetraethoxysilane, carbon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, silicon carbon oxynitride or boron nitride.

[0057] In this embodiment, the material of the protective layer 220 is tetraethoxysilane, and the process for forming the protective layer 220 is a chemical vapor deposition process; the process parameters of the chemical vapor deposition include: the energy range of the electron beam is 0.2Kev~2Kev; the deposition gas includes: tetraethoxysilane, and the flow rate of the deposition gas is 1 standard ml / min~1000 standard ml / min.

[0058] In other embodiments, the material of the protective layer includes silicon oxide, molybdenum oxide or chromium oxide; and the process of forming the protective layer is a chemical reaction.

[0059] The process of forming the protective layer 220 includes a chemical vapor deposition process or a chemical reaction, both of which are conventional processes with low costs.

[0060] Please refer to Figure 7 , performing a first stage first etching process on the protection layer 220 to remove the protection layer 220 on the first area I until the surface of the light shielding film 210 on the first area I is exposed.

[0061] It should be noted that the first etching process in the first stage adopts a first electron beam etching process.

[0062] The parameters of the first electron beam etching process include: the energy of the electron beam is 0.2Kev to 2Kev, the etching gas used is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard ml / min to 1000 standard ml / min.

[0063] Specifically, the electron beam is focused to react with the etching gas on the first region I to cause a chemical reaction, thereby etching the protective layer 220 on the first region I.

[0064] Since the electron beam in the first electron beam etching process will inevitably generate scattered electrons during the process of etching the first region I, the scattered electrons will cause etching to the second region II surrounding the first region I. In addition, the electron density of the electron beam is greater than the electron density of the scattered electrons, so that the etching rate of the electron beam is greater than the etching rate of the scattered electrons, that is, the etching rate of the protective layer 220 on the first region I by the first electron beam etching process is greater than the etching rate of the protective layer 220 on the second region II. Therefore, in the first stage first etching process, while the light shielding film 210 on the first region I is exposed, the protective layer 220 on the second region II is not completely removed, that is, the side wall surface and the top surface of the light shielding film 210 on the second region II still have a certain thickness of the protective layer 220, so that when the second stage first etching process is continued later, the light shielding film 210 on the first region I is etched less, and the light shielding film 210 on the second region II is still protected by the protective layer 220 and will not be etched, thereby reducing the etching deviation caused to the second region II.

[0065] Please refer to Figure 8 After removing the protective layer 220 on the first region I, the second stage first etching process is performed on the light shielding film 210 in the first region I using the protective layer 220 as a mask until the top surface and side wall surface of the light shielding film 210 on the second region II are exposed, thereby forming an initial light shielding layer 230 and an initial opening 240 located in the initial light shielding layer.

[0066] It should be noted that the first etching process in the second stage adopts the first electron beam etching process.

[0067] Since the protective layer 220 on the first region I has been removed, the surface of the light shielding film 210 on the first region I is exposed, so that the electron beam in the first electron beam etching process can etch the light shielding film 210 on the first region I, thereby reducing the thickness of the light shielding film 210. At the same time, the scattered electrons generated in the first electron beam etching process cause etching of the protective layer 220 on the second region II.

[0068] In this embodiment, the second stage first etching process is performed until the top surface and side wall surface of the shading film 210 on the second region II are exposed, and then the next first etching is performed, thereby preventing the shading film 210 on the second region II from being damaged by etching, thereby reducing the etching deviation caused by scattered electrons.

[0069] Please refer to Fig. 9 , a protective layer 221 is formed on the surface of the initial light shielding layer 230 .

[0070] The material and formation method of the protective layer 221 are Figure 6The material and formation method of the protective layer 220 formed in are the same as those of the protective layer 220, which will not be repeated here.

[0071] The process of forming the protection layer 221 includes a chemical vapor deposition process or a chemical reaction, both of which are conventional processes with low costs.

[0072] Please refer to Fig.10 , performing a first stage first etching process on the protection layer 221 to remove the protection layer 221 on the first region I until the initial light shielding layer 230 on the first region I is exposed.

[0073] The first stage first etching process and Figure 7 The process parameters of the first etching process in the first stage are the same as those in the first etching process, and will not be repeated here.

[0074] Since scattered electrons are inevitably generated during the process of etching the first region I by the electron beam in the first electron beam etching process, the scattered electrons will cause etching to the second region II surrounding the first region I. In addition, the electron density of the electron beam is greater than the electron density of the scattered electrons, so that the etching rate of the electron beam is greater than the etching rate of the scattered electrons, that is, the etching rate of the protective layer 221 on the first region I by the first electron beam etching process is greater than the etching rate of the protective layer 221 on the second region II. Therefore, in the first stage first etching process, while the initial light-shielding layer 230 on the first region I is exposed, the protective layer 221 on the second region II is not completely removed, that is, the side wall surface and the top surface of the initial light-shielding layer 230 on the second region II still have a certain thickness of the protective layer 221, so that when the second stage first etching process is subsequently continued, the initial light-shielding layer 230 on the first region I is etched less, and the initial light-shielding layer 230 on the second region II is still protected by the protective layer 221 and will not be etched, thereby reducing the etching deviation caused to the second region II.

[0075] Please refer to Fig.11 After removing the protective layer 221 on the first region I, the initial light shielding layer 230 of the first region I is subjected to the second stage first etching process using the protective layer 220 as a mask until the surface of the substrate 200 of the first region I is exposed to form a light shielding layer 250, wherein the light shielding layer 250 has an opening 260, and the opening 260 exposes the surface of the first region I.

[0076] The second stage first etching process and Figure 8 The process parameters of the first etching process in the second stage are the same as those in the first etching process, and will not be repeated here.

[0077] In the present embodiment, when the first etching process in the second stage etches the initial light-shielding layer 230 to expose the surface of the substrate 200 in the first region I, the side wall surface and the top surface of the initial light-shielding layer 230 in the second region II still have a protective layer 221 of a certain thickness, so that the surface of the initial light-shielding layer 230 in the second region II is protected by the protective layer 221, thereby preventing the initial light-shielding layer 230 in the second region II from being etched and damaged by scattered electrons, thereby effectively reducing the etching deviation, and the defects of the formed light-shielding layer 250 are effectively repaired.

[0078] In this embodiment, after forming the light shielding layer 250 , the step further includes: removing the protective layer 221 .

[0079] In other embodiments, when the first etching process in the second stage etches the initial light shielding layer to expose the substrate surface in the first area, the protective layer on the second area is also etched away to expose the surface of the initial light shielding layer in the second area.

[0080] Correspondingly, an embodiment of the present invention further provides a mask formed by the above method.

[0081] Since the mask defect repairing method can reduce the etching deviation in the repairing process, the defects of the formed mask can be repaired more accurately, thereby improving the repair rate of the mask.

[0082] Correspondingly, an embodiment of the present invention also provides a method for using a mask.

[0083] Figures 12 to 15 The present invention discloses a method for using a mask in accordance with an embodiment of the present invention.

[0084] Please refer to Fig.12 , providing a substrate 300.

[0085] In this embodiment, the substrate 300 has a device layer (not shown in the figure). The device layer may include a device structure, for example, a PMOS transistor or an NMOS transistor. The device layer may also include an interconnection structure electrically connected to the device structure, and an insulating layer surrounding the device structure and the interconnection structure.

[0086] The material of the substrate 300 is a semiconductor material. In this embodiment, the material of the substrate 300 is silicon. In other embodiments, the material of the first substrate includes silicon carbide, silicon germanium, a multi-component semiconductor material composed of group III-V elements, silicon on insulator (SOI) or germanium on insulator. Among them, the multi-component semiconductor material composed of group III-V elements includes InP, GaAs, GaP, InAs, InSb, InGaAs or InGaAsP.

[0087] Please refer to Fig.13, a photoresist 310 is formed on the surface of the substrate 300 .

[0088] The process of forming the photoresist 310 includes: a spin coating process or a chemical vapor deposition process.

[0089] Next, the photoresist 310 is exposed and developed using the mask formed by the above method to form a photoresist layer on the surface of the substrate 300. For details on the process of forming the photoresist layer, please refer to Figure 14 to Figure 15 .

[0090] Please refer to Fig.14 The photoresist 310 is exposed using the mask formed by the above method, and the material of the photoresist 310 in the exposed area is different from the material of the photoresist 310 in the unexposed area.

[0091] Please refer to Fig.15 After the exposure process, the photoresist 310 is developed to form a photoresist layer 320 on the surface of the substrate 300.

[0092] Since the mask defect repair method can reduce the etching deviation during the repair process, the accuracy of the exposure and development process of the photoresist 310 using the mask is higher, so a photoresist layer 320 with a more accurate pattern can be formed, meeting the process requirements, which is beneficial to improving the performance of the formed semiconductor structure.

[0093] Correspondingly, an embodiment of the present invention further provides a semiconductor structure formed by using the above-mentioned method of using the mask.

[0094] Since the mask whose defects have been repaired more accurately is used to perform the exposure and development process on the photoresist 310, the etching accuracy of the semiconductor structure is higher, so that the performance of the formed semiconductor structure is better.

[0095] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for repairing a mask defect, characterized in that: include: Providing a substrate, the substrate comprising a first area and a second area surrounding the first area, the substrate surface having a light shielding film; the thickness of the light shielding film on the first area is less than the thickness of the light shielding film on the second area; Performing a first etching on the light shielding film to form a light shielding layer, wherein the light shielding layer has an opening, and the opening exposes the surface of the first region; The first etching comprises: forming a protective layer on the surface of the light-shielding film; performing a first electron beam etching process on the protective layer and the light shielding film on the first region; Among them, the first electron beam etching process for the protective layer and the light-shielding film on the first area includes: forming a protective layer on the surface of the light-shielding film; the protective layer covers the surface of the light-shielding film on the first area and the side wall surface and the top surface of the light-shielding film on the second area; performing a first-stage first etching process on the protective layer to remove the protective layer on the first area until the light-shielding film on the first area is exposed, and the top surface and the side wall surface of the light-shielding film on the second area are still covered by the protective layer; after removing the protective layer on the first area, using the protective layer as a mask, performing a second-stage first etching process on the light-shielding film in the first area until the top surface and the side wall surface of the light-shielding film on the second area are exposed, forming a light-shielding layer and an opening located in the light-shielding layer, and the opening exposes the surface of the first area; the scattered electrons generated in the second-stage first etching process cause etching of the protective layer on the second area, but the light-shielding film on the second area will not be etched.

2. The method for repairing a mask defect according to claim 1, wherein: The process parameters of the first electron beam etching process include: the energy range of the electron beam is 0.2Kev to 2Kev, the etching gas used is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard ml / min to 1000 standard ml / min.

3. The method for repairing a mask defect according to claim 1, wherein: The method for forming the light-shielding film comprises: forming an initial light-shielding material on the surface of the substrate; and performing a second electron beam etching process on the initial light-shielding material on the first region to form the light-shielding film.

4. The method for repairing a mask defect according to claim 3, wherein: The process parameters of the second electron beam etching include: the energy range of the electron beam is 0.2Kev to 2Kev, the etching gas used is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard ml / min to 1000 standard ml / min.

5. The method for repairing a mask defect according to claim 1, wherein: The material of the protective layer includes: tetraethoxysilane, carbon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, silicon carbonitride oxide or boron nitride; the process of forming the protective layer includes: chemical vapor deposition process.

6. The method for repairing a mask defect according to claim 1, wherein: The material of the protective layer includes silicon oxide, molybdenum oxide or chromium oxide; the process of forming the protective layer includes chemical reaction.

7. The method for repairing a mask defect according to claim 1, wherein: The material of the substrate is a light-transmitting material; the light-transmitting material includes: quartz glass.

8. The method for repairing a mask defect according to claim 1, wherein: The material of the substrate is a reflective material; the reflective material includes: one or more of molybdenum, ruthenium or a composite formed by molybdenum, ruthenium and silicon.

9. The method for repairing a mask defect according to claim 1, wherein: The material of the light shielding film includes: chromium or molybdenum silicide.

10. A mask formed by the mask defect repairing method according to any one of claims 1 to 9.

11. A method for using a mask, characterized in that: include: providing a substrate; forming a photoresist on the surface of the substrate; The photoresist is subjected to an exposure and development process using the mask plate as claimed in claim 10 to form a photoresist layer on the surface of the substrate.

12. A semiconductor structure formed by using the method for using the mask according to claim 11.

Images