Laser annealing device

Abstract

The present invention provides a laser annealing device, which includes: a laser light source, which radiates laser light; a laser shaping unit, which receives the laser light radiated from the laser light source and shapes it into a line beam of a predetermined size and shape; an imaging optical system, which makes the shaped laser light converge after passing through and irradiates the annealing object substrate; a base, which carries the substrate and moves it on a plane parallel to the substrate surface, and also includes a laser correction unit, which checks the laser state and path of the laser light radiated from the laser light source reaching the substrate, and corrects the laser state and path according to the inspection result. According to the present invention, the change of the path or state of the laser light caused by the instability of the optical elements on the laser light source and the path can be corrected, so that the light irradiation for laser annealing can be accurately performed at the accurate position of the substrate on the base.

Description

Technical Field

[0001] The present invention relates to a laser annealing device for laser annealing a semiconductor substrate, and more particularly, to a laser annealing device capable of solving the problem of laser instability or irradiation displacement during the laser annealing process. Background Art

[0002] Annealing refers to a type of heat treatment method for a processing object. In the field of semiconductors or display devices, annealing generally refers to a processing method used to uniformly distribute or activate injected impurities through rapid heating and slow cooling heat treatment, or to eliminate semiconductor crystal defects.

[0003] Furnace equipment or electric lamp devices can also be used in this type of annealing device, but recently more developed and used is a laser annealing method that rapidly raises the temperature in a relatively short period of time and concentrates the energy in a limited location such as a specific area of ​​the object or a thin surface layer to perform heat treatment. This can reduce the thermal burden on the entire substrate and allow the object area to be heat treated sufficiently and evenly.

[0004] Laser annealing is generally performed by converting a laser beam into a line beam form and scanning the line beam over a processing area of ​​an object.

[0005] When performing the above scanning, rather than moving the laser beam, a more commonly used method is to fix the laser beam irradiation position, and when scanning the object with a line beam, a method is adopted in which the object is linearly moved on the horizontal plane on the substrate rack.

[0006] Representative laser annealing is commonly used in a process of forming a thin amorphous silicon layer on a substrate in a liquid crystal display device or an organic electroluminescent device, injecting impurities, and then forming the amorphous silicon layer into a polycrystalline silicon layer or a single crystal silicon layer by laser irradiation.

[0007] In conventional laser annealing devices, laser light is incident on the surface of a substrate to be processed through a predetermined path, and the substrate to be processed is fixed on a chuck and placed on a plane on a rack that moves in the x-axis and y-axis directions to scan the entire surface.

[0008] The method of scanning the entire area of ​​a semiconductor wafer with a laser line beam is roughly as follows Figure 1 That is, a line beam (LB) of a predetermined width is moved from one side of the wafer 15 in a direction perpendicular to the line in one direction (x-axis direction) as indicated by the arrow, so that it passes over the wafer, and then moves to the other side of the wafer in a direction perpendicular to one direction (y-axis direction) according to the line width, and this time it moves in the opposite direction and passes over the wafer. The above method is repeated so that the line beam covers the entire area of ​​the wafer and passes through, and the entire area of ​​the wafer can be annealed.

[0009] When performing line beam scanning on the wafer 15, as shown in FIG. Figure 2 As shown, in a predetermined area 15 ′ through which the line beam LB passes, the surface layer of the wafer 15 is heated to a predetermined temperature and then slowly cooled, thereby performing reforming such as crystallization, homogenization, and activation of impurities on the surface layer material.

[0010] Figure 3 This is a conceptual diagram schematically showing the structure of an example of a conventional laser annealing device.

[0011] The laser annealing device is formed by the following structure: a laser oscillator 4 for generating a continuous oscillation laser light 3 combined with an excitation laser diode (LD) 1 and a fiber 2; a shutter 5 for turning the laser light 3 on and off; a continuously variable neutral density (ND) filter 6 for adjusting the transmittance of the energy of the laser light 3; an electro-optical (EO) modulator 7 for pulsing the laser light 3 output from the laser oscillator 4 and for temporally modulating the energy; a polarization beam splitter 8; a beam expander (beam reducer) 9; a beam homogenizer 10 for shaping the laser light 3 into a thinner and longer beam; a right quadrilateral slit or mask 11 for forming the shaped laser light 3 into a predetermined size; and an imaging lens 16 for imaging the mask 11 onto a substrate 15 which is loaded on an XY stage 14 and then moves in parallel.

[0012] The laser light 3 oscillated from the laser oscillator 4 is turned on / off by the shutter 5. That is, the laser oscillator 4 is set to oscillate the laser light 3 at a predetermined output power at all times, and the shutter 5 is usually in a closed state, and the laser light 3 is blocked by the shutter 5. The shutter 5 is opened only when the laser light 3 is irradiated, and the laser light 3 is output. However, when the laser light 3 is turned on / off by turning on / off the excitation laser diode 1, the stability of the laser output may be affected.

[0013] The laser 3 passing through the shutter 5 passes through the continuously variable neutral density filter 6 for adjusting the power and enters the EO modulator 7. The EO modulator 7 supplies voltage to the crystal or the Pockels cell through a driver (not shown), thereby rotating the polarization direction of the laser 3 passing through the crystal, allowing the P polarization component to directly pass through the polarization beam splitter 8 placed behind the crystal, and causing the S polarization component to deflect by 90°, thereby turning the laser 3 on / off.

[0014] That is, the laser light 3 can be modulated by alternately supplying a voltage V1 for rotating the polarization direction of the laser light 3 so that it is incident with P polarization to the polarization beam splitter 8 and a voltage V2 for rotating the polarization direction of the laser light 3 so that it is incident with S polarization, and supplying an arbitrary voltage between V1 and V2 to set an arbitrary output power. In the above example, a configuration in which the Pockels cell and the polarization beam splitter 8 are combined as the EO modulator 7 is described, but various polarization elements can be used instead of the polarization beam splitter.

[0015] From the above description, it can be understood that the structure from the laser diode 1 to the polarization beam splitter 8 forms a laser light source in a broad sense.

[0016] The laser light 3 emitted from the above-mentioned laser light source is incident on a beam homogenizer 10 after the beam diameter is adjusted by a beam expander or a beam reducer 9 for adjusting the beam diameter.

[0017] The relatively long and narrow beam obtained by the beam homogenizer 10 is converted into laser light of a more accurate predetermined size by the mask 11 , and is collected by the imaging lens 16 and irradiated onto the wafer 15 mounted on the wafer stage 14 .

[0018] Here, the laser light shaped into a relatively long and thin shape by the beam homogenizer 10 may be transformed into parallel light by means of a relay lens or a tube lens, and then projected onto the substrate as a long and thin line beam through the imaging lens 16. In this case, even if the distance between the relay lens and the imaging lens is changed, the size or energy density of the long and thin beam projected onto the substrate does not change. Therefore, a tube lens is provided and an observation optical system or an energy monitoring optical system is inserted between the tube lens and the imaging lens 16 as needed.

[0019] However, the above-mentioned conventional laser annealing devices have the following problems: due to unstable factors such as the laser light source or the optical system components themselves or the combined structure on the laser's travel path, the optical axis moves or the angle is distorted, causing the irradiation position of the laser on the substrate to fluctuate, and the size or shape of the laser changes, resulting in variables in the annealing process. Summary of the invention

[0020] Technical issues to be solved

[0021] In order to solve the above-mentioned problems of conventional laser annealing devices, the present invention provides a laser annealing device having a structure capable of sensing and correcting changes in the optical path or changes in the size and shape of the laser beam caused by instability of the laser light source or optical elements on the optical path.

[0022] Technical solutions to the problem

[0023] A laser annealing device according to another aspect of the present invention for solving the above-mentioned technical problems comprises: a laser light source for emitting laser light; a laser shaping unit for receiving the laser light emitted from the laser light source and shaping it into a line beam of a predetermined size and shape; an imaging optical system for focusing the shaped laser light after passing through and irradiating the annealing object substrate; a base for mounting the substrate and moving the substrate on a plane parallel to the substrate surface; and a laser correction unit for inspecting the laser state and path of the laser light emitted from the laser light source reaching the substrate, and correcting the laser state and path according to the inspection result.

[0024] In one embodiment, the laser correction unit includes: a first inspection and adjustment device located between the laser light source and the laser shaping unit; and a second inspection and adjustment device located between the laser shaping unit and the imaging optical system.

[0025] In one embodiment, the laser correction unit includes at least one of a device unit for checking and correcting the shape and size of the laser and a device unit for checking and correcting the optical path. In addition, the laser correction unit includes at least one of a device unit for moving the optical axis in parallel and a device unit for changing the reflection angle. The above-mentioned device unit may correspond to at least a part of the first inspection and adjustment device or the second inspection and adjustment device.

[0026] In one embodiment, the first inspection and adjustment device is formed with a first reflector and a second reflector whose angles are adjusted by a driving device, and is formed with a light detector that generates a signal for inspecting and correcting the shape and size of the laser passing through the first reflector, and a first light analyzer that generates a signal for inspecting and correcting the optical path of the laser and adjusts the angles of the first reflector and the second reflector.

[0027] In one embodiment, the second inspection and adjustment device generates a signal for inspecting and correcting at least one of a shape, a size, a light uniformity, and a position of the laser light formed in a line beam form by the laser shaping unit.

[0028] In order to solve the above-mentioned technical problems, another aspect of the present invention is a laser annealing device, which includes: a laser light source, which radiates laser light; a first inspection and adjustment device, which inspects and corrects the shape and size of the laser light, or inspects and corrects the light path; a laser shaping unit, which receives the laser light passing through the first inspection and adjustment unit and shapes it into a line beam of a predetermined size and shape; a second inspection and adjustment unit, which moves the optical axis of the laser light passing through the laser shaping unit in parallel, or changes the reflection angle; and an imaging optical system, which focuses the laser light passing through the second inspection and adjustment unit and irradiates it onto the annealing object, i.e., the substrate.

[0029] In one embodiment, it further includes: a base, which is used to load the substrate and move the substrate on a plane parallel to the substrate surface.

[0030] In one embodiment, it further includes: a processing device for controlling the actions of the laser light source, the first inspection and adjustment device, the second inspection and adjustment device and the base, or a controller or control device corresponding to the processing device.

[0031] In one embodiment, the first inspection and adjustment device includes: a first reflector and a second reflector, which can be adjusted in angle by a driving device; a photodetector, which generates a signal for inspecting and correcting the shape and size of the laser; and a first optical analyzer, which generates a signal for inspecting and correcting the optical path of the laser, and adjusts the angles of the first reflector and the second reflector.

[0032] In one embodiment, the second inspection and adjustment device includes: a second optical analyzer, which receives a portion of the laser light output in the form of a line beam through the laser shaping section through a beam splitter, and generates a signal for inspecting and correcting at least one of the form, size, light uniformity, and position of the laser light; and a focusing lens, which is arranged at the front end of the second optical analyzer on the optical path to focus the laser light.

[0033] A laser annealing device according to another aspect of the present invention for solving the above-mentioned technical problems comprises a laser light source for emitting laser light, a laser shaping unit for receiving the laser light emitted from the laser light source and shaping the laser light into a line beam of a predetermined size and shape, an imaging optical system for allowing the shaped laser light to pass through and focus and then irradiate the annealing object substrate, a base (rack) for loading the substrate and moving the substrate on a plane parallel to the substrate surface, and further comprises: a laser correction unit (inspection and adjustment device) for inspecting the laser state and path of the laser light emitted from the laser light source reaching the substrate, and correcting the laser state and path based on the inspection result.

[0034] In one embodiment, the laser correction unit may include a device unit for checking and correcting the shape and size of the laser and / or a device unit for checking and correcting the light path, and the device unit for checking and correcting the light path includes at least one of a device unit for moving the optical axis in parallel and a device unit for changing the reflection angle.

[0035] In one embodiment, the laser correction units are dispersedly provided on a path from the laser light source to the laser shaper and on a path from the laser shaper to the imaging lens.

[0036] Effects of the Invention

[0037] If the above-mentioned laser annealing device is used, it has the following advantages: it can check and correct the changes in the path or state of the laser caused by the instability of the laser light source and the optical elements on the path, thereby effectively controlling the positioning of the substrate on the base, thereby improving the performance and reliability of laser annealing. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A conceptual plan view showing an example of a method of performing annealing on the surface of a semiconductor wafer using a laser in the form of a line beam;

[0039] Figure 2 is a conceptual cross-sectional view for explaining surface layer reformation in a partial region of a semiconductor wafer where laser annealing is performed;

[0040] Figure 3 A conceptual diagram showing the structure of an example of a conventional laser annealing device;

[0041] Figure 4 FIG. 1 is a diagram showing a concept of a laser annealing device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0042] The present invention will be described in more detail below through detailed embodiments of the present invention with reference to the accompanying drawings.

[0043] Figure 4 FIG. 1 is a diagram showing a concept of a laser annealing apparatus according to an embodiment of the present invention.

[0044] Reference Figure 4 , this embodiment is formed by the following structures in the same manner as the conventional ones: a laser light source 110, which emits laser light; a laser correction unit, which is used to check the laser state and path of the laser light emitted from the laser light source 110 reaching the substrate 115 and correct the laser state and path according to the inspection result; a laser shaping unit 140, which receives the laser light emitted from the laser light source 110 and passes through the first correction unit of the laser correction unit, and shapes the laser light into a line beam of a predetermined size and shape and transmits it to the second correction unit of the laser correction unit; an imaging optical system 170, which allows the shaped laser light to pass through and focus, and then irradiates the annealing target substrate 115; a base 180, which is used to load the substrate 115 and move it on a plane parallel to the substrate surface. Here, the first correction unit corresponds to the first inspection and adjustment device 120 described later, and the second correction unit corresponds to the second inspection and adjustment device 160 described later.

[0045] The laser light source 110 is basically formed by a laser oscillator and a shutter, etc., and can be formed as follows. Figure 3 A component for adjusting the power of a laser beam radiated actively or passively in a conventional example.

[0046] The laser light source 110 has a wavelength at which the energy absorption rate of the amorphous silicon film or polycrystalline silicon film to be annealed is high, and more preferably, Ar laser or Kr laser and its second harmonic, Nd:YAG laser, Nd:YVO4 laser, second harmonic and third harmonic of Nd:YLF laser, etc. As an example, preferably, the second harmonic wavelength of 532nm of Nd:YAG laser or the second harmonic (wavelength 532nm) of Nd:YVO4 laser by laser diode (LD) excitation method is used, and the laser light generated from the oscillator forms a Gaussian energy distribution from the center of the circle to the outer contour. In this embodiment, the laser light source uses a DPSS (diode pumped solid state) laser of the second harmonic or the third harmonic of Nd:YVO4 laser excited by LD and continuously oscillated.

[0047] In this embodiment, the laser light emitted from the laser light source 110 has a first inspection and adjustment device 120 for inspecting the state of the laser light and adjusting the optical path of the laser light in an angle adjustment manner.

[0048] The first inspection and adjustment device 120 includes a first reflector 121 and a second reflector 127 having a partial beam splitter function. The reflectors are adjusted in angle by means of a motor (not shown), and the laser light reflected from them can be moved on the x-axis on the substrate by the first reflector 121 and on the y-axis on the substrate by the second reflector 127. The reflectors reflect about 99% of most of the light and transmit less than 1% of the light. The laser light transmitted from the first reflector 121 is projected to a photodetector 123 for inspecting the laser state such as the size and shape of the laser light, and the laser light transmitted from the second reflector 127 is projected to a first optical analyzer 129.

[0049] The photodetector 123 senses the laser state, generates an adjustment signal in a feedback manner, and adjusts the laser state through elements such as slits or masks in the laser light source 110 that are used to adjust the size or shape of the laser.

[0050] The first optical analyzer 129 receives the laser light transmitted through the second reflector 127 after the path adjustment from the first reflector 121, confirms the result of the first path adjustment, and generates an adjustment signal in a feedback manner, and corrects and adjusts the driving amount of the motor of the first reflector 121 through a dedicated controller (not shown). If the minute position change of the laser light transmitted through the second reflector is detected, the angle change of the second reflector can also be measured. Therefore, the driving amount of the motor of the second reflector 127 can also be corrected and adjusted according to the situation.

[0051] Thus, the first inspection and adjustment device 120 can adjust the laser state and the position or laser path at which the laser is irradiated on the substrate.

[0052] Furthermore, in the present embodiment, a laser power adjuster 125 is provided between the first reflector 121 and the second reflector 127 of the first inspection and adjustment device 120, and the laser output is sensed and adjusted directly, or, after an adjustment signal is generated, the laser output power is adjusted in a feedback manner through another adjustment device in the laser light source 110.

[0053] The laser light passing through the first inspection and adjustment device 120 is reflected by the third reflection mirror 130 and then projected toward the laser shaping unit 140. Here, the laser shaping unit 140 is formed by connecting a beam shaper 141 and a beam mask 143 in series.

[0054] The beam shaper 141 is an optical element that shapes the laser into a thinner and longer linear beam. Here, the thinner and longer shape is interpreted in a broad sense including a linear, a right quadrilateral, an ellipse or an oblong. Generally speaking, the laser light of a gas laser or a solid laser is a circular laser light with a Gaussian energy distribution, and is not suitable for laser annealing in its original state. If the oscillator output power is large enough, the beam diameter can be fully expanded and only a relatively uniform portion of the center can be taken to obtain a roughly uniform energy distribution. However, the peripheral portion of the beam is discarded and most of the energy is wasted. In order to solve the above disadvantages, the beam shaper 141 is used to convert the Gaussian distribution into a uniform distribution (flat-top distribution).

[0055] In order to form the beam shaper 141, a combination of a Powell lens and a cylindrical lens, a kaleidoscope, a diffractive optical element, a combination of a multi-lens (or cylindrical lens) array and a cylindrical lens can be used. As described above, if an oscillator with sufficiently large energy is used, a beam mask having a right square opening slit that sufficiently expands the beam diameter can be used alone. However, when the beam mask 143 is used here, the beam shaper 141 is supplemented to remove the peripheral portion of the line beam passing through the beam shaper 141, so that the line beam has a more uniform and predetermined shape. The opening slit of the beam mask 143 is, for example, a right square, a line, an ellipse, an oblong, or other aperture or slit.

[0056] Regardless of the uniformity of energy density, a cylindrical lens can be used as a beam shaper 141. In this case, the laser is compressed in only one direction. Therefore, one direction is used as a short direction, and a direction perpendicular to it forms a Gaussian distribution of the original beam state, and the center part can be cut and used as needed.

[0057] The laser beam in the form of a linear beam passing through the laser shaping unit 140 is projected to the imaging lens system 170 after passing through the beam splitter 150 having a significant transmittance and a very low reflectance of about 1%, and is focused by the imaging lens system 170 and reaches the substrate 115. In this state, the substrate 115 is fixed to a chuck of a rack or base 180 that can move in the x-axis and y-axis directions, and moves on a plane, so that the entire substrate is annealed.

[0058] The line beam reflected from the beam splitter 150 is projected toward the second inspection and adjustment device 160. The second optical analyzer 162 of the second inspection and adjustment device 160 inspects the line beam focused by the other focusing lens 161 to detect whether it has an appropriate shape and light intensity distribution or energy distribution. If the result shows a problem, the operator adjusts the laser shaping unit 140 or directly generates a signal to adjust the lens arrangement of the beam shaper 141 (beam homogenizer) forming the laser shaping unit 140 in real time through a drive device (not shown) in a feedback-based adjustment.

[0059] Furthermore, it is also possible to check whether the line light beam is in the appropriate position and whether it irradiates the appropriate position on the substrate. If necessary, the reflector in the first inspection and adjustment device 120 is moved to adjust the light path twice in a feedback manner.

[0060] In the above description, the device that performs adjustment in a feedback manner is to transmit an operation signal reflecting the inspection result of the inspection device that functions as a sensor such as a light detector, a first light analyzer, and a second light analyzer to a computer 190 or various controllers that are connected wirelessly or by wire, and the computer 119 or the controller drives a driving device such as a motor (not shown) in the form of an electrical signal to operate the angle of the first reflector and the second reflector that affect the light path or the lens arrangement distance in the beam shaper. The above-mentioned adjustment method is general, and therefore, a more detailed description is omitted.

[0061] However, the processing device of the computer 190 may be a controller or a control device, which is formed with a processor and a memory, and the processor controls the operation of the above-mentioned laser annealing device through a program or software module stored in the memory. Here, the processor can be connected to the driving device, the sensor, the first inspection and adjustment device, the second inspection and adjustment device, the first optical analyzer, the second optical analyzer, the driving device of the base, etc. through the sub-communication system.

[0062] In the above description, the first inspection and adjustment device and the second inspection and adjustment device are separately installed and operated on the optical path, but they can also be installed and operated as a whole, and part of them can also be removed.

[0063] The present invention is described above by limited embodiments, but it is only for illustrative purposes to help understand the present invention, and the present invention is not limited to specific embodiments. That is, a person skilled in the art of the present invention can make various changes or application examples based on the present invention, and the above-mentioned modified examples or application examples belong to the scope of the attached claims.

Claims

1. A laser annealing device, characterized in that: include: a laser light source that emits laser light; a laser shaping unit that receives the laser light emitted from the laser light source and shapes the laser light into a line beam of a predetermined size and shape; An imaging optical system that converges the shaped laser beam after passing through the laser beam and irradiates the annealing target substrate; a beam splitter, located between the laser shaping unit and the imaging optical system, which transmits the line beam emitted from the laser shaping unit while reflecting a part of it; a base that carries the substrate and moves the substrate on a plane parallel to the substrate surface; and a laser correction unit that checks the laser state and path of the laser emitted from the laser light source reaching the substrate and corrects the laser state and path based on the inspection result; The laser correction unit comprises: a first inspection and adjustment device, which is located between the laser light source and the laser shaping unit; a second inspection and adjustment device located between the laser shaping unit and the imaging optical system; and a third reflecting mirror for projecting the laser light passing through the first inspection and adjustment device toward the laser shaping unit; The first inspection and adjustment device comprises: The first reflecting mirror reflects the laser light emitted from the laser light source and transmits a part of the laser light, and the angle of the reflecting mirror can be adjusted by a driving device; a light detector for detecting the shape and size of the laser light passing through the first reflector; a second reflecting mirror which reflects the laser light reflected from the first reflecting mirror and transmits a portion of the laser light, and can be adjusted in angle by a driving device; and The first optical analyzer confirms the laser path by receiving the laser light transmitted through the second reflecting mirror and generates an adjustment signal for correcting the driving amount of the driving device of the first reflecting mirror or the second reflecting mirror. The second inspection and adjustment device inspects the shape, light intensity distribution and energy distribution of the laser based on the line beam reflected from the beam splitter, and generates an adjustment signal for adjusting at least one of the first reflecting mirror, the second reflecting mirror and the laser shaping unit.

2. A laser annealing device, characterized in that: include: a laser light source that emits laser light; a first inspection and adjustment device for inspecting and correcting the shape and size of the laser, or inspecting and correcting the optical path; a laser shaping unit for receiving the laser light passing through the first inspection and adjustment device and shaping the laser light into a line beam of a predetermined size and shape; a third reflecting mirror for projecting the laser light passing through the first inspection and adjustment device toward the laser shaping part; a second inspection and adjustment device for parallelly moving the optical axis of the laser light passing through the laser shaping unit or changing the reflection angle; and an imaging optical system that focuses the laser beam that has passed through the second inspection and adjustment device and irradiates the laser beam to the substrate that is the annealing object, The first inspection and adjustment device comprises: The first reflecting mirror reflects the laser light emitted from the laser light source and transmits a part of the laser light, and the angle of the reflecting mirror can be adjusted by a driving device; a light detector for detecting the shape and size of the laser light passing through the first reflector; a second reflecting mirror which reflects the laser light reflected from the first reflecting mirror and transmits a portion of the laser light, and can be adjusted in angle by a driving device; and The first optical analyzer confirms the laser path by receiving the laser light transmitted through the second reflecting mirror and generates an adjustment signal for correcting the driving amount of the driving device of the first reflecting mirror or the second reflecting mirror. The second inspection and adjustment device comprises: a second optical analyzer that receives a portion of the laser light output in the form of a line beam through the laser shaping section via a beam splitter, checks the form, light intensity distribution, and energy distribution of the laser light, and generates an adjustment signal for adjusting at least one of the first reflecting mirror, the second reflecting mirror, and the laser shaping section; and A focusing lens is disposed at the front end of the second optical analyzer on the optical path to focus the laser light.

3. The laser annealing device according to claim 2, characterized in that: Also includes: The base is used to load the substrate and move the substrate on a plane parallel to the substrate surface.

4. The laser annealing device according to claim 3, characterized in that: It also includes: a processing device for controlling the actions of the laser light source, the first inspection and adjustment device, the second inspection and adjustment device, and the base, or a controller or control device corresponding to the processing device.

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