Substrate processing device, method for manufacturing semiconductor device, and storage medium

Abstract

The present invention provides a substrate processing device, a method for manufacturing a semiconductor device, and a storage medium, which can improve the in-plane uniformity of film characteristics formed on a substrate in a rotary device. The substrate processing device comprises: a processing chamber for processing a substrate; a substrate support portion provided in the processing chamber and having a plurality of substrate-carrying portions; a main nozzle provided opposite to the carrier portion and having a first non-porous portion for pyrolyzing a processing gas; and an auxiliary nozzle provided opposite to the carrier portion and having a second non-porous portion for pyrolyzing a processing gas.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device, a method for manufacturing a semiconductor device, and a storage medium. Background Art

[0002] As an apparatus for processing semiconductor substrates, a rotary apparatus is known, which arranges a plurality of substrates on a substrate mounting table along a circumferential direction and rotates the substrate mounting table to supply a plurality of gases to the plurality of substrates. In addition, a vertical apparatus is known, which supplies a raw material gas to the plurality of substrates using a raw material gas nozzle extending in the loading direction of the substrates while the plurality of substrates are loaded. For example, refer to Patent Documents 1 and 2.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-34013

[0006] Patent Document 2: Japanese Patent Application Publication No. 2017-147262 Summary of the invention

[0007] Problems to be solved by the invention

[0008] In a rotary device, for example, a 300 mm substrate is arranged in the circumferential direction and subjected to a heat treatment. Therefore, when, for example, an I-shaped nozzle is used to supply a raw material gas, the raw material gas supplied to the substrate is pyrolyzed in the nozzle as the temperature of the device increases, resulting in different film thicknesses of the film formed in the radial direction of the substrate.

[0009] The present disclosure aims to solve the above-mentioned problems and to provide a technique for improving the in-plane uniformity of film properties formed on a substrate in a rotary device.

[0010] Solutions to Solve Problems

[0011] According to one embodiment of the present disclosure, the following technology is provided, which has:

[0012] a processing chamber for processing a substrate;

[0013] a substrate supporting portion disposed in the processing chamber and having a plurality of placing portions for placing the substrate;

[0014] A main nozzle disposed opposite to the mounting portion and having a first non-porous portion for pyrolyzing the processing gas;

[0015] The auxiliary nozzle is provided to face the mounting portion and has a second non-porous portion for pyrolyzing the processing gas.

[0016] Effects of the Invention

[0017] According to the present disclosure, it is possible to improve the in-plane uniformity of film properties formed on a substrate in a rotary device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic cross-sectional view of a reactor included in the substrate processing apparatus according to the first embodiment of the present disclosure.

[0019] Figure 2 is a schematic longitudinal cross-sectional view of a reactor provided in a substrate processing apparatus according to a first embodiment of the present disclosure, Figure 1 A cross-sectional view of the reactor taken along line AA' is shown.

[0020] Figure 3 It is an explanatory diagram for explaining the substrate support mechanism according to the first embodiment of the present disclosure.

[0021] Figure 4 (A) is an explanatory diagram for explaining a raw material gas supply unit according to a first embodiment of the present disclosure. Figure 4 (B) is an explanatory diagram for explaining the reaction gas supply unit according to the first embodiment of the present disclosure. Figure 4 (C) is an explanatory diagram for explaining the first inert gas supply unit according to the first embodiment of the present disclosure. Figure 4 (D) is an explanatory diagram for explaining the second inert gas supply unit according to the first embodiment of the present disclosure.

[0022] Figure 5 This is a partial vertical cross-sectional schematic diagram for explaining an exhaust port of a reactor included in the substrate processing apparatus according to the first embodiment of the present disclosure.

[0023] Figure 6 It is an explanatory diagram for explaining the nozzle according to the first embodiment of the present disclosure and the thermal decomposition amount of the raw material gas flowing in the nozzle.

[0024] Figure 7 It is an explanatory diagram for explaining the controller according to the first embodiment of the present disclosure.

[0025] Figure 8 This is a flowchart for explaining the substrate processing step according to the first embodiment of the present disclosure.

[0026] Fig. 9 This is a flowchart for explaining the substrate processing step according to the first embodiment of the present disclosure.

[0027] Fig.10 This is a schematic cross-sectional view of a reactor including a nozzle according to a second embodiment of the present disclosure.

[0028] Fig.11(A) is a schematic plan view for explaining a nozzle according to a second embodiment of the present disclosure. Fig.11 (B) is a schematic longitudinal sectional view for explaining the nozzle according to the second embodiment of the present disclosure. Fig.11 (C) is a schematic longitudinal sectional view for explaining a modified example of the nozzle according to the second embodiment of the present disclosure.

[0029] Fig.12 This is a partial vertical cross-sectional schematic diagram for explaining a modified example of the exhaust port of the reactor included in the substrate processing apparatus according to the first embodiment of the present disclosure.

[0030] Fig.13 This is a partial vertical cross-sectional schematic diagram for explaining a modified example of the exhaust port of the reactor included in the substrate processing apparatus according to the first embodiment of the present disclosure.

[0031] In the figure:

[0032] S—substrate; 200—reactor; 201—processing chamber; 203—processing container; 206a—first processing area; 206b—second processing area; 207a—first purge area; 207b—second purge area; 217—rotating table (substrate supporting part); 217b—recess (loading part); 245, 255, 265, 266—nozzle; 291, 292, 296—exhaust port; 300—controller (control part). DETAILED DESCRIPTION

[0033] <First embodiment>

[0034] (1) Structure of substrate processing apparatus

[0035] like Figure 1 and Figure 2 As shown, the reactor 200 includes a cylindrical airtight container, i.e., a processing container 203. The processing container 203 is made of, for example, stainless steel (SUS), aluminum alloy, etc. A processing chamber 201 for processing a substrate S is formed in the processing container 203. A gate valve 205 is connected to the processing container 203, and the substrate S can be carried in and out through the gate valve 205.

[0036] The processing chamber 201 has a processing area 206 for supplying a processing gas and a purge area 207 for supplying a purge gas. Here, the processing area 206 and the purge area 207 are alternately arranged in a circular shape. For example, they are arranged in the order of a first processing area 206a, a first purge area 207a, a second processing area 206b, and a second purge area 207b. As described later, a raw material gas is supplied to the first processing area 206a, a reaction gas is supplied to the second processing area 206b, and an inert gas is supplied to the first purge area 207a and the second purge area 207b. Thus, a predetermined process is performed on the substrate S in accordance with the supply of gases to each area.

[0037] The purge area 207 is a region that spatially separates the first processing area 206a from the second processing area 206b. The top plate 208 of the purge area 207 is configured to be lower than the top plate 209 of the processing area 206. A top plate 208a is provided in the first purge area 207a, and a top plate 208b is provided in the second purge area 207b. By lowering each top plate, the pressure of the space of the purge area 207 is increased. By supplying purge gas to the space, the adjacent processing areas 206 are divided. In addition, the purge gas also has the function of removing excess gas on the substrate S.

[0038] A rotating table 217 as a substrate support portion having a rotating shaft and rotatable therein is provided at the center of the processing container 203, for example, at the center of the processing container 203. To prevent metal contamination of the substrate S, the rotating table 217 is made of materials such as quartz, carbon, or SiC.

[0039] The rotating table 217 is configured to support a plurality of (e.g., 5) substrates S on the same surface and arranged on the same circumference along the rotation direction in the processing container 203. The "same surface" mentioned here is not limited to the completely same surface, as long as the plurality of substrates S are arranged without overlapping each other when the rotating table 217 is viewed from above.

[0040] The substrate S support position on the surface of the rotating table 217 is provided with a recessed portion 217b as a placement portion for placing the substrate S. The same number of recessed portions 217b as the number of substrates S to be processed are arranged at equal intervals (for example, intervals of 72°) on a concentric circle from the center of the rotating table 217. Figure 1 Illustrations are omitted for ease of explanation.

[0041] Each recess 217b is, for example, circular when viewed from the upper surface of the rotating table 217 and concave when viewed from the side. It is preferably configured so that the diameter of the recess 217b is slightly larger than the diameter of the substrate S. A substrate mounting surface is provided at the bottom of the recess 217b, and the substrate S can be placed on the substrate mounting surface by placing the substrate S in the recess. A plurality of through holes 217a for the pins 219 described later to pass through are provided in each recess 217b.

[0042] The processing container 203 is provided with a portion below the rotating table 217 and opposite to the gate valve 205. Figure 3 The substrate holding mechanism 218 shown in the figure. The substrate holding mechanism 218 has a plurality of pins 219 that support the back side of the substrate S by lifting the substrate S when the substrate S is carried in or out. The pins 219 are an extendable structure, for example, can be housed in the main body of the substrate holding mechanism 218. When the substrate S is transferred, the pins 219 extend and penetrate the through holes 217a and hold the substrate S. Thereafter, the front ends of the pins 219 move downward, thereby placing the substrate S on the recessed portion 217b. The substrate holding mechanism 218 is fixed to the processing container 203, for example. The substrate holding mechanism 218 can be configured so that the pins 219 can be inserted into the holes 217a when the substrate is placed, or can be fixed to the inner peripheral protrusion 282 and the outer peripheral protrusion 283 described later.

[0043] The rotating table 217 is fixed to the core 221. The core 221 is provided at the center of the rotating table 217 and has the function of fixing the rotating table 217. Since it is a structure for supporting the rotating table 217, a metal that can withstand the weight is used. A main shaft 222 is arranged below the core 221. The main shaft 222 supports the core 221.

[0044] The lower part of the main shaft 222 passes through the hole 223 provided at the bottom of the processing container 203, and is covered by the airtight container 204 outside the processing container 203. In addition, the lower end of the main shaft 222 is connected to the rotating part 224. The rotating part 224 is equipped with a rotating shaft, a motor, etc., and is configured to rotate the rotating table 217 according to the instruction of the controller 300 described later. That is, the controller 300 rotates the rotating table 217 through the rotating part 224 with the core 221, which is a point outside the substrate S, as the center, so that the substrate S passes through the first processing area 206a, the first purge area 207a, the second processing area 206b, and the second purge area 207b in sequence.

[0045] The quartz cover 225 is provided in a manner covering the core 221. That is, the quartz cover 225 is provided between the core 221 and the processing chamber 201. The quartz cover 225 is configured to cover the core 221 via a space. In order to avoid metal contamination of the substrate S, the quartz cover 225 is formed of a material such as quartz or SiC. The core 221, the spindle 222, the rotating part 224, and the quartz cover 225 are collectively referred to as a support part.

[0046] A heater unit 281 is disposed below the turntable 217. The heater unit 281 has a built-in heater 280 as a heating unit. The heater 280 heats each substrate S placed on the turntable 217. The heater 280 is formed in a circular shape along the shape of the processing container 203.

[0047] The heater unit 281 is mainly composed of an inner circumferential convex portion 282 provided at the center side of the processing container 203, an outer circumferential convex portion 283 provided on the outer circumferential side of the heater 280, and the heater 280 on the bottom of the processing container 203. The inner circumferential convex portion 282, the heater 280, and the outer circumferential convex portion 283 are arranged in a concentric circle. A space 284 is formed between the inner circumferential convex portion 282 and the outer circumferential convex portion 283. The heater 280 is arranged in the space 284. The inner circumferential convex portion 282 and the outer circumferential convex portion 283 are fixed to the processing container 203, and therefore can also be considered as a part of the processing container 203.

[0048] Here, although the circumferential heater 280 is described, a structure divided into multiple parts may be adopted as long as the substrate S can be heated. Alternatively, a structure in which the heater 280 is built in the rotating table 217 may be adopted.

[0049] A flange 282a is formed on the upper part of the inner circumferential protrusion 282 and on the heater 280 side. The window 285 is supported by the flange 282a and the upper surface of the outer circumferential protrusion 283. The window 285 is made of a material that allows the heat generated from the heater 280 to pass through, such as quartz. The window 285 is sandwiched and fixed by the upper part 286a of the exhaust structure 286 described later and the inner circumferential protrusion 282.

[0050] The heater 280 is connected to the heater control unit 287. The heater 280 is electrically connected to the controller 300 described later, and the power supply to the heater 280 is controlled according to the instruction of the controller 300 to perform temperature control.

[0051] An inert gas supply pipe 275 communicating with the space 284 is provided at the bottom of the processing container 203. The inert gas supply pipe 275 is connected to a second inert gas supply unit 270 described later. The inert gas supplied from the second inert gas supply unit 270 is supplied to the space 284 via the inert gas supply pipe 275. By making the space 284 an inert gas atmosphere, the processing gas is prevented from intruding from a gap near the window 285 or the like.

[0052] A metal exhaust structure 286 is disposed between the outer peripheral surface of the outer peripheral protrusion 283 and the inner peripheral surface of the processing container 203. The exhaust structure 286 has an exhaust groove 288 and an exhaust buffer space 289. The exhaust groove 288 and the exhaust buffer space 289 are formed in a circular shape along the shape of the processing container 203.

[0053] The portion of the exhaust structure 286 that is not in contact with the outer peripheral protrusion 283 is referred to as an upper portion 286a. As described above, the upper portion 286a fixes the window 285 together with the inner peripheral protrusion 282.

[0054] In the rotary substrate processing apparatus of this embodiment, it is preferred that the height of the substrate S and the height of the exhaust port be the same height or close to each other. If the height of the exhaust port is low, gas turbulence may occur at the end of the rotating table 217. In contrast, by forming the heights to be the same or close to each other, turbulence can be prevented even at the edge of the substrate on the exhaust port side.

[0055] In this embodiment, the upper end of the exhaust structure 286 is at the same height as the rotating table 217. Figure 2 As shown in the figure, the upper portion 286a protrudes from the window 285, so a quartz cover 290 is provided at this portion to prevent the diffusion of particles. If the quartz cover 290 is not provided, the upper portion 286a contacts the gas, and the upper portion 286a is corroded, which may generate particles in the processing chamber 201. A space 299 is provided between the quartz cover 290 and the upper portion 286a.

[0056] The exhaust port 291 and the exhaust port 292 as the first exhaust part are provided at the bottom of the exhaust structure 286. The exhaust port 291 mainly exhausts the raw material gas supplied to the first processing area 206a and the purge gas supplied from the upstream thereof. The exhaust port 292 mainly exhausts the reaction gas supplied to the processing space 206b and the purge gas supplied from the upstream thereof. Each gas is exhausted from the exhaust port 291 and the exhaust port 292 via the exhaust groove 288 and the exhaust buffer space 289.

[0057] Next refer to Figure 1 and Figure 4 (A) is used to explain the raw material gas supply unit 240. Figure 1 As shown, a nozzle 245 is inserted into the side of the processing container 203, and the nozzle 245 extends toward the center direction of the processing container 203. The nozzle 245 is arranged in the first processing area 206a. The nozzle 245 is composed of a plurality of nozzles, and the plurality of nozzles are respectively connected to the downstream end of the gas supply pipe 241. The nozzle 245 will be described in detail later.

[0058] The gas supply pipe 241 is provided with, in order from the upstream direction, a raw gas supply source 242 , a mass flow controller (MFC) 243 which is a flow controller (flow control unit), and a valve 244 which is an opening and closing valve.

[0059] The raw material gas is supplied from the nozzle 245 into the first processing region 206 a via the MFC 243 , the valve 244 , and the gas supply pipe 241 .

[0060] The "raw material gas" mentioned here is one of the processing gases, and is a gas used as a raw material when forming a thin film. As an element constituting the thin film, the raw material gas contains at least one of silicon (Si), titanium (Ti), tantalum (Ta), hafnium (Hf), zirconium (Zr), ruthenium (Ru), nickel (Ni), tungsten (W), and molybdenum (Mo).

[0061] Specifically, in this embodiment, the raw material gas is, for example, dichlorosilane (Si2H2Cl2) gas. When the raw material of the raw material gas is a gas at room temperature, the MFC 243 is a mass flow controller for the gas.

[0062] The raw material gas supply unit (first gas supply system or raw material gas supply unit) 240 is mainly composed of the gas supply pipe 241, MFC 243, valve 244, and nozzle 245. In addition, the raw material gas supply source 242 may be considered to be included in the raw material gas supply unit 240.

[0063] Next refer to Figure 1 and Figure 4 (B) is used to explain the reaction gas supply unit 250. Figure 1 As shown, a nozzle 255 is inserted into the side of the processing container 203, and the nozzle 255 extends toward the center of the processing container 203. The nozzle 255 is arranged in the second processing area 206b.

[0064] The nozzle 255 is connected to the gas supply pipe 251. The gas supply pipe 251 is provided with a reaction gas supply source 252, an MFC 253, and a valve 254 in order from the upstream direction.

[0065] The reaction gas is supplied from the nozzle 255 into the second processing region 206 b via the MFC 253 , the valve 254 , and the gas supply pipe 251 .

[0066] The "reactive gas" mentioned here is one of the processing gases, and is a gas that reacts with the first layer formed by the raw material gas on the substrate S. The reactive gas is, for example, at least one of ammonia (NH3), nitrogen (N2), hydrogen (H2), and oxygen (O2). Here, the reactive gas is, for example, NH3 gas.

[0067] The reaction gas supply unit (second gas supply unit) 250 is mainly composed of the gas supply pipe 251, the MFC 253, the valve 254, and the nozzle 255. In addition, the reaction gas supply source 252 may be considered to be included in the reaction gas supply unit 250.

[0068] Next refer to Figure 1 and Figure 4 The first inert gas supply unit 260 is described in detail in (C). Figure 1 As shown, a nozzle 265 and a nozzle 266 extending toward the center direction of the processing container 203 are inserted into the side of the processing container 203. The nozzle 265 is a nozzle inserted into the first purge area 207a. The nozzle 265 is fixed to the top plate 208a of the first purge area 207a, for example. The nozzle 266 is a nozzle inserted into the second purge area 207b. The nozzle 266 is fixed to the top plate 208b of the second purge area 207b, for example.

[0069] The nozzle 265 and the nozzle 266 are connected to the downstream end of the inert gas supply pipe 261. The inert gas supply pipe 261 is provided with an inert gas supply source 262, an MFC 263, and a valve 264 in order from the upstream direction. The inert gas is supplied from the nozzle 265 and the nozzle 266 to the first purge area 207a and the second purge area 207b respectively via the MFC 263, the valve 264, and the inert gas supply pipe 261. The inert gas supplied to the first purge area 207a and the second purge area 207b functions as a purge gas.

[0070] The first inert gas supply unit is mainly composed of the inert gas supply pipe 261, the MFC 263, the valve 264, the nozzle 265, and the nozzle 266. In addition, the inert gas supply source 262 can also be considered to be included in the first inert gas supply unit.

[0071] Next refer to Figure 2 and Figure 4 270. The inert gas supply pipe 275 is connected to the downstream end of the inert gas supply pipe 271. The inert gas supply pipe 271 is provided with an inert gas supply source 272, an MFC 273, and a valve 274 in order from the upstream direction. The inert gas is supplied from the inert gas supply pipe 275 to the space 284 and the container 204 via the MFC 273, the valve 274, and the inert gas supply pipe 271.

[0072] The inert gas supplied to the container 204 is exhausted from the exhaust groove 288 through the space between the rotating table 217 and the window 285. With such a structure, the raw material gas and the reaction gas are prevented from entering the space between the rotating table 217 and the window 285.

[0073] The second inert gas supply unit 270 is mainly composed of the inert gas supply pipe 271, the MFC 273, the valve 274, and the inert gas supply pipe 275. In addition, the inert gas supply source 272 can also be considered to be included in the second inert gas supply unit 270.

[0074] Here, the "inert gas" is, for example, at least one of rare gases such as nitrogen (N2), helium (He), neon (Ne), and argon (Ar). Here, the inert gas is, for example, N2 gas.

[0075] like Figure 1 , Figure 2 and Figure 5 As shown, the processing container 203 is provided with an exhaust port 291 and an exhaust port 292. In addition, the turntable 217 is provided with an exhaust port 296 as a second exhaust portion.

[0076] The exhaust port 291 is arranged outward from the turntable 217 on the downstream side of the rotation direction R of the first processing area 206a. Thus, the raw material gas that is pyrolyzed and supplied to the substrate S can be discharged from the first processing area 206a, thereby suppressing the influence of the pyrolyzed raw material gas on the substrate. The raw material gas and the inert gas are mainly discharged. An exhaust pipe 234a, which is a part of the exhaust section 234, is arranged in communication with the exhaust port 291. A vacuum pump 234b as a vacuum exhaust device is connected to the exhaust pipe 234a via a valve 234d as an on-off valve and an APC (Auto Pressure Controller: automatic pressure controller) valve 234c as a pressure regulator (pressure regulating section), and the vacuum pump 234b is configured to be able to perform vacuum exhaust so that the pressure in the processing chamber 201 becomes a predetermined pressure (vacuum degree).

[0077] The exhaust pipe 234a, the valve 234d, and the APC valve 234c are collectively referred to as an exhaust unit 234. In addition, the exhaust unit 234 may include a vacuum pump 234b.

[0078] The exhaust port 296 is provided closer to the center side of the processing chamber 201 than the recessed portion 217b on which the substrate S of the rotating table 217 is placed. By providing the exhaust port 296, the gas supplied to the center side of the rotating table 217 is discharged from the exhaust port 296 to the space below the rotating table 217. The gas discharged to the space below the rotating table 217 is discharged through the exhaust port 291 provided outside the processing chamber 201. In addition, a partition 294 is provided on the top plate 209 on the center side of the rotating table 217 of the first processing area 206a to partition the first processing area 206a from other processing areas. The exhaust port 296 is provided closer to the outside of the rotating table 217 than the partition 294 which is closer to the center side than the recessed portion 217b of the rotating table 217. Thus, the raw material gas which is pyrolyzed and supplied to the substrate S can be discharged from the first processing area 206a, and the influence of the pyrolyzed raw material gas on the substrate can be suppressed. The exhaust port 296 communicates with the space between the rotating table 217 and the window 285 and mainly exhausts the raw material gas and the inert gas.

[0079] In addition, if Figure 1 , Figure 2As shown, the exhaust unit 235 is provided so as to communicate with the exhaust port 292. The exhaust port 292 is provided outside the turntable 217 on the downstream side of the second processing area 206b in the rotation direction R. The reaction gas and the inert gas are mainly exhausted.

[0080] An exhaust pipe 235a, which is a part of the exhaust unit 235, is provided to communicate with the exhaust port 292. A vacuum pump 235b is connected to the exhaust pipe 235a via a valve 235d and an APC valve 235c, and is configured to perform vacuum exhaust so that the pressure in the processing chamber 201 becomes a predetermined pressure (vacuum degree).

[0081] The exhaust pipe 235a, the valve 235d, and the APC valve 235c are collectively referred to as an exhaust unit 235. In addition, the exhaust unit 235 may include a vacuum pump 235b.

[0082] Next, refer to Figure 1 and Figure 6 The nozzle 245 is described in detail. The nozzle 245 is used as a part of a raw material gas supply unit for supplying Si 2 H 2 Cl 2 gas of silicon (Si) as an example of raw material gas to the first processing region 206a.

[0083] The nozzle 245 includes a nozzle 245a as a main nozzle and nozzles 245b, 245c, and 245d as auxiliary nozzles. The nozzles 245a to 245d are each in an I-shape and are arranged parallel to each other in the first processing area 206a. The nozzles 245a to 245d are made of a material having cleaning resistance, such as quartz or ceramic.

[0084] The nozzles 245 a to 245 d extend in the radial direction from the wall 203 a side of the processing container 203 toward the center side of the turntable 217 .

[0085] A circular hole 255a is formed at the front end of the nozzle 245a on the downstream side of the gas flow on the side opposite to the concave portion 217b of the rotating table 217 (the substrate S on the rotating table 217). In addition, the nozzle 245a has a non-porous portion 265a for pyrolyzing the raw material gas. In other words, the nozzle 245a has a non-porous portion 265a on the side opposite to the heater 280 where no hole is formed.

[0086] A hole 255b in the shape of a circular hole is formed at the front end of the downstream side of the gas flow on the side opposite to the concave portion 217b of the rotating table 217 (the substrate S on the rotating table 217) of the nozzle 245b. The nozzle 245b is shorter in length and has a smaller nozzle diameter and aperture than the nozzle 245a. In addition, the nozzle 245b has a non-porous portion 265b for making the raw material gas into a pyrolysis state. In other words, the nozzle 245b has a non-porous portion 265b on the side opposite to the heater 280 where no hole is formed.

[0087] A hole 255c in the shape of a circular hole is formed at the front end of the downstream side of the gas flow on the side opposite to the concave portion 217b of the rotating table 217 (the substrate S on the rotating table 217) of the nozzle 245c. The nozzle 245c is shorter in length and has a smaller nozzle diameter and aperture than the nozzle 245b. In addition, the nozzle 245c has a non-porous portion 265c for making the raw material gas into a pyrolysis state. In other words, the nozzle 245c has a non-porous portion 265c on the side opposite to the heater 280 where no hole is formed.

[0088] A hole 255d in the shape of a circular hole is formed at the front end of the downstream side of the gas flow on the side opposite to the concave portion 217b of the rotating table 217 (the substrate S on the rotating table 217) of the nozzle 245d. The nozzle 245d is shorter in length and has a smaller nozzle diameter and aperture than the nozzle 245c. In addition, the nozzle 245d has a non-porous portion 265d for making the raw material gas into a pyrolysis state. In other words, the nozzle 245d has a non-porous portion 265d on the side opposite to the heater 280 where no hole is formed.

[0089] In this way, the nozzles 245a to 245d have non-porous portions 265a to 265d on the side opposite to the heater 280, so that the raw material gas supplied to the nozzles 245a to 245d is pyrolyzed in the process of passing through the non-porous portions 265a to 265d from the holes 255a to 255d until it is supplied onto the substrate S, and the pyrolyzed raw material gas is supplied from the holes 255a to 255d. That is, pyrolysis can occur near the substrate S, and the pyrolyzed raw material gas can be supplied onto the substrate S.

[0090] As described above, the nozzles 245a to 245d are configured to have different lengths from the upstream side to the downstream side in the rotation direction R of the substrate S. Specifically, for example, the nozzles 245a to 245d are configured to have gradually shorter lengths from the upstream side to the downstream side in the rotation direction R of the substrate S.

[0091] The nozzles 245a to 245d are arranged so that the nozzle diameters vary from upstream to downstream in the rotation direction R of the substrate S. Specifically, for example, the nozzles 245a to 245d are configured so that the nozzle diameters gradually decrease from upstream to downstream in the rotation direction R of the substrate S.

[0092] The nozzles 245a to 245d are arranged with different apertures from upstream to downstream in the rotation direction R of the substrate S. Specifically, for example, the apertures 255a to 255d of the nozzles 245a to 245d are configured to gradually decrease from upstream to downstream in the rotation direction R of the substrate S.

[0093] Here, the length of each nozzle 245a to 245d is proportional to the nozzle diameter of the nozzle 245a to 245d. That is, the nozzle on the upstream side of the rotation direction R of the substrate S is longer and has a larger nozzle diameter than the nozzle on the downstream side. In other words, the nozzle on the downstream side of the rotation direction R of the substrate S is shorter and has a smaller nozzle diameter than the nozzle on the upstream side.

[0094] In addition, the nozzle diameter of each of the nozzles 245a to 245d is proportional to the aperture of the holes 255a to 255d of the nozzles 245a to 245d. That is, the nozzle on the upstream side of the rotation direction R of the substrate S has a larger nozzle diameter and a larger aperture than the nozzle on the downstream side. In other words, the nozzle on the downstream side of the rotation direction R of the substrate S has a smaller nozzle diameter and a smaller aperture than the nozzle on the upstream side.

[0095] That is, the nozzle diameter of nozzle 245a, which is the longest among nozzles 245a to 245d and extends to the vicinity of the center of turntable 217, is made larger than the nozzle diameter of nozzle 245d, which is the shortest among nozzles 245a to 245d and extends to the outer peripheral side of turntable 217. Relatively speaking, the hole diameter of hole 255a of nozzle 245a is made larger than the hole diameter of hole 255d of nozzle 245d.

[0096] In other words, the length of the nozzle 245d on the most downstream side is shorter than the nozzle 245a on the most upstream side in the rotation direction of the rotating table 217. In addition, the nozzle diameter of the nozzle 245d on the most downstream side is smaller than the nozzle diameter of the nozzle 245a on the most upstream side in the rotation direction of the rotating table 217. In addition, the hole diameter of the hole 255d on the most downstream side is smaller than the hole diameter of the hole 255a of the nozzle 245a on the most upstream side in the rotation direction of the rotating table 217.

[0097] The holes 255a to 255d are configured to supply the source gas to different positions in the radial direction on the substrate S of the turntable 217. The pyrolyzed source gas supplied from the holes 255a to 255d is exhausted through the exhaust ports 291 and 296.

[0098] In each of the nozzles 245a to 245d, the pyrolysis of the raw material gas is accelerated in the radial direction of the substrate S as the temperature of the device increases, and the pyrolysis of the raw material gas is performed from the upstream side to the downstream side of the gas flow of each of the nozzles 245a to 245d. Figure 6 As shown, the amount of thermal decomposition of the raw material gas flowing through the nozzles 245a to 245d gradually increases from the upstream side to the downstream side.

[0099] Here, as described above, the nozzles 245a to 245d have the non-hole portions 265a to 265d, respectively, and the nozzles 245a to 245d are different in length, nozzle diameter, and hole diameter.

[0100] The raw material gas supplied to each nozzle 245a to 245d is pyrolyzed when passing through each non-porous portion 265a to 265d. That is, the non-porous portions 265a to 265d without holes are respectively provided in the plurality of nozzles 245a to 245d having different lengths, nozzle diameters, and apertures, so that the raw material gas supplied to the substrate S can be in a pyrolyzed state. That is, the length (length of the non-porous portion), nozzle diameter, and aperture of each nozzle 245a to 245d are adjusted in such a manner that the pyrolysis amount of the raw material gas supplied from the hole 255a, the pyrolysis amount of the raw material gas supplied from the hole 255b of the nozzle 245b, the pyrolysis amount of the raw material gas supplied from the hole 255c of the nozzle 245c, and the pyrolysis amount of the raw material gas supplied from the hole 255d of the nozzle 245d are the same. In this way, the pyrolysis amount of the raw material gas supplied to the substrate S can be made uniform by using a plurality of nozzles having non-porous portions with different nozzle lengths, nozzle diameters, and apertures. Furthermore, the raw material gas that is pyrolyzed in the same manner can be supplied to the substrate S, so that the uniformity of the in-plane film thickness of the film formed in the radial direction of the substrate S can be improved.

[0101] The reactor 200 has a controller 300 for controlling the operation of each part. Figure 7 As shown, the controller 300 at least includes: a computing unit (CPU) 301, a RAM 302 as a temporary storage unit, a storage unit 303, and a transceiver 304. The controller 300 is connected to each structure of the substrate processing device 10 via the transceiver 304, and retrieves the program and recipe from the storage unit 303 according to the instructions of the host controller and the user, and controls the operation of each structure according to the content. In addition, the controller 300 can be composed of a dedicated computer or a general-purpose computer. For example, an external storage device (for example, a magnetic disk such as a magnetic tape, a floppy disk, a hard disk, an optical disk such as a CD, a DVD, an optical magnetic disk such as an MO, a USB memory (USB Flash Drive), a semiconductor memory such as a memory card) 312 storing the above-mentioned program is prepared, and the program is installed to a general-purpose computer using the external storage device 312, so that the controller 300 of this embodiment can be constructed. In addition, the method of providing the program to the computer is not limited to the case of providing it via the external storage device 312. For example, a communication method such as the Internet or a dedicated line can also be used, and information can be received from the host device 320 via the transceiver 311 instead of providing the program via the external storage device 312. In addition, the controller 300 may be instructed using an input / output device 313 such as a keyboard or a touch panel.

[0102] In addition, the storage unit 303 and the external storage device 312 are composed of computer-readable storage media. Hereinafter, they are collectively referred to as storage media. In addition, when "storage medium" is used in this specification, it includes: only the storage unit 303 alone, only the external storage device 312 alone, or both.

[0103] The CPU 301 reads a control program from the storage unit 303 and executes it, and reads a recipe from the storage unit 303 in response to input of an operation command from the input / output device 313. The CPU 301 controls each component according to the contents of the read recipe.

[0104] (2) Substrate processing steps

[0105] Next, refer to Figure 8 and Fig. 9 The substrate processing step of the first embodiment will be described. Figure 8 1 is a flowchart showing a substrate processing step according to the present embodiment. Fig. 9 2 is a flowchart showing the film forming process of the present embodiment. In the following description, the operation of each component of the reactor 200 of the substrate processing apparatus 10 is controlled by the controller 300 .

[0106] Here, an example in which a silicon nitride (SiN) film is formed as a thin film on a substrate S using Si 2 H 2 Cl 2 gas as a raw material gas and NH 3 gas as a reaction gas will be described.

[0107] The substrate loading / loading step S110 is described. In the reactor 200, the pin 219 is raised so that the pin 219 passes through the through hole 217a of the rotating table 217. As a result, the pin 219 protrudes from the surface of the rotating table 217 by a predetermined height. Next, the gate valve 205 is opened and a substrate transfer machine (not shown) is used. Figure 3 In this way, the substrate S is placed on the pins 219. After placement, the pins 219 are lowered to place the substrate S on the recessed portion 217b.

[0108] Then, the rotating table 217 is rotated so that the recessed portion 217b where no substrate S is placed faces the gate valve 205. Then, the substrate S is placed in the recessed portion 217b in the same manner. This process is repeated until the substrate S is placed in all the recessed portions 217b.

[0109] After the substrate S is carried into the recessed portion 217 b , the substrate transfer machine is retracted to the outside of the reactor 200 , and the gate valve 205 is closed to seal the inside of the processing container 203 .

[0110] In addition, it is preferred that when the substrate S is carried into the processing chamber 201, the processing chamber 201 is exhausted by the exhaust units 234 and 235, and N2 gas as an inert gas is supplied into the processing chamber 201 from the first inert gas supply unit 260. In this way, it is possible to suppress the intrusion of particles into the processing chamber 201 and the attachment of particles to the substrate S. The vacuum pumps 234b and 235b are always in operation at least from the substrate carrying-in / loading step (S110) to the end of the substrate carrying-out step (S170) described later.

[0111] When the substrate S is placed on the rotating table 217, power is supplied to the heater 280 in advance to control the surface of the substrate S to a predetermined temperature. The temperature of the substrate S is, for example, above room temperature and below 650° C., preferably above room temperature and below 400° C. The heater 280 is always powered on at least from the substrate loading / loading step (S110) to the end of the substrate unloading step (S170) described later.

[0112] In parallel, the inert gas is supplied from the second inert gas supply unit 270 to the processing container 203 and the heater unit 281. The inert gas is supplied at least from the substrate loading / loading step (S110) to the end of the substrate unloading step (S170) described later.

[0113] The turntable rotation start step S120 is described below. After the substrate S is placed on each recess 217b, the rotation unit 224 is controlled to rotate the turntable 217 in the direction R. By rotating the turntable 217, the substrate S moves in the order of the first processing area 206a, the first purge area 207a, the second processing area 206b, and the second purge area 207b.

[0114] The gas supply start step S130 is described. The substrate S is heated to a desired temperature, and when the turntable 217 reaches a desired rotation speed, the valve 244 is opened to start supplying Si2H2Cl2 gas into the first processing area 206a. In parallel, the valve 254 is opened to supply NH3 gas into the second processing area 206b.

[0115] At this time, the MFC 243 is adjusted so that the flow rate of the Si 2 H 2 Cl 2 gas becomes a predetermined flow rate. In addition, the supply flow rate of the Si 2 H 2 Cl 2 gas is, for example, 50 sccm or more and 500 sccm or less.

[0116] In addition, the MFC 253 is adjusted so that the flow rate of the NH 3 gas becomes a predetermined flow rate. In addition, the supply flow rate of the NH 3 gas is, for example, not less than 100 sccm and not more than 5000 sccm.

[0117] Furthermore, after the substrate carrying / loading step S110, the processing chamber 201 is continuously exhausted by the exhaust units 234 and 235, and N2 gas as a purge gas is supplied to the first purge area 207a and the second purge area 207b from the first inert gas supply unit 260. In addition, the pressure in the processing chamber 201 is set to a predetermined pressure by appropriately adjusting the valve openings of the APC valves 234c and 235c.

[0118] The film forming step S140 is described. Here, the basic flow of the film forming step S140 is described, and the details will be described later. In the film forming step S140, each substrate S forms a silicon-containing layer in the first processing area 206a, and then in the rotated second processing area 206b, the silicon-containing layer reacts with NH3 gas to form a SiN film on the substrate S. The rotating table 217 is rotated a predetermined number of times to form a desired film thickness.

[0119] The gas supply stopping step S150 is described below. After the predetermined number of rotations, the valves 244 and 254 are closed to stop the supply of Si 2 H 2 Cl 2 gas to the first processing region 206 a and the supply of NH 3 gas to the second processing region 206 b.

[0120] The turntable rotation stopping step S160 will be described. After the gas supply stopping step S150, the rotation of the turntable 217 is stopped.

[0121] The substrate unloading process S170 is described. The rotating table 217 is rotated to move the substrate S to a position opposite to the gate valve 205. Thereafter, the substrate S is supported on the pins 219 in the same manner as when the substrate is carried in. After the support, the gate valve 205 is opened, and the substrate S is unloaded out of the processing container 203 by a substrate transfer machine (not shown). The processing of a plurality of substrates S is repeated and all the substrates S are unloaded. After the unloading, the inert gas supply by the first inert gas supply unit 260 and the second inert gas supply unit 270 is stopped.

[0122] Next refer to Fig. 9 The film forming step S140 will be described in detail. In addition, from the first processing area passing step S210 to the second purge area passing step S240 , one substrate S among the plurality of substrates S placed on the rotating table 217 will be mainly described.

[0123] like Fig. 9 As shown, in the film forming step S140 , the plurality of substrates S are sequentially passed through the first processing region 206 a , the first purge region 207 a , the second processing region 206 b , and the second purge region 207 b by the rotation of the rotating table 217 .

[0124] The first processing area passing step S210 is described. When the substrate S passes through the first processing area 206a, Si2H2Cl2 gas is supplied to the substrate S. At this time, there is no reaction gas in the first processing area 206a, and the Si2H2Cl2 gas does not react with the reaction gas, but directly contacts (adheres) to the surface of the substrate S. Thus, a first layer is formed on the surface of the substrate S.

[0125] The first purge region passing step S220 is described. After the substrate S passes through the first processing region 206a, it moves to the first purge region 207a. When the substrate S passes through the first purge region 207a, the Si2H2Cl2 component in the first processing region 206a that fails to form a strong bond on the substrate S is removed from the substrate S by an inert gas.

[0126] The second processing area passing step S230 is described. After the substrate S passes through the first purge area 207a, it moves to the second processing area 206b. When the substrate S passes through the second processing area 206b, the first layer reacts with the NH3 gas as a reaction gas in the second processing area 206b. Thus, a second layer containing at least Si and N is formed on the substrate S.

[0127] The second purge region passing step S240 is described. After the substrate S passes through the second processing region 206b, it moves to the second purge region 207b. When the substrate S passes through the second purge region 207b, the HCl separated from the second layer on the substrate S in the second processing region 206b, the remaining H2 gas, etc. are removed from the substrate S by the inert gas.

[0128] In this way, at least two gases that react with each other are sequentially supplied to the substrate S. The first processing region passing step S210, the first purge region passing step S220, the second processing region passing step S230, and the second purge region passing step S240 are considered as one cycle.

[0129] The determination S250 will be described. The controller 300 determines whether the above-mentioned one cycle has been executed a predetermined number of times. Specifically, the controller 300 counts the number of rotations of the rotating table 217 .

[0130] When the above cycle is not performed for the predetermined number of times (when "No" in S250), the rotating table 217 is further rotated to repeat the cycle including the first processing area passing step S210, the first purge area passing step S220, the second processing area passing step S230, and the second purge area passing step S240. The thin film is formed by stacking in this way.

[0131] When the above-mentioned one cycle is executed a predetermined number of times (when "YES" in S250), the film forming step S140 is terminated. In this way, by executing the above-mentioned one cycle a predetermined number of times, a stacked thin film having a predetermined film thickness is formed.

[0132] (3) Effects of this embodiment

[0133] According to the above-described embodiment, one or more of the following effects can be obtained.

[0134] (a) It is possible to suppress unevenness of the film formed on the substrate due to thermal decomposition of the raw material gas in the nozzle. In other words, it is possible to improve the uniformity of the film thickness in the plane of the film formed on the substrate.

[0135] (b) The plurality of nozzles have non-porous portions on the sides facing the respective heaters, so that pyrolysis can occur near the substrate S and the pyrolyzed raw material gas can be supplied onto the substrate S.

[0136] (c) By using a plurality of nozzles having different nozzle lengths, nozzle diameters, and hole diameters and having a non-hole portion, the amount of pyrolysis of the raw material gas supplied to the substrate S can be made uniform.

[0137] (d) The exhaust port for discharging the raw material gas is arranged on the outside relative to the turntable and on the center side relative to the recessed portion of the turntable, so that the raw material gas that undergoes pyrolysis and is supplied to the substrate S is discharged from the first processing area 206a, thereby suppressing the influence of the pyrolyzed raw material gas retained in the first processing area 206a on the substrate.

[0138] (4) Other Implementation Methods

[0139] The number of nozzles, the shape of the holes, the number of holes, the size of the holes, etc. constituting the nozzle 245 are not limited to the scheme shown in the first embodiment. For example, they can also be changed as shown in the following embodiment. The following mainly describes the parts different from the first embodiment. Through the following embodiment, the same effect as the method shown in the first embodiment can also be obtained.

[0140] (Second Embodiment)

[0141] like Fig.10 , Fig.11 (A) and Fig.11 As shown in FIG. 2 (B), in the second embodiment, a nozzle 345 is used instead of the above-mentioned nozzle 245 .

[0142] The nozzle 345 is composed of a nozzle 345a as a main nozzle and a nozzle 345b as an auxiliary nozzle. The nozzles 345a and 345b are respectively I-shaped and are arranged parallel to each other in the first processing area 206a. The nozzles 345a and 345b are configured to extend on the recess 217a (on the substrate S). On the nozzle 345a, the gas supply pipe 241 is connected to the outer peripheral side of the rotating table 217, and the nozzle 345a supplies the raw material gas from the outer peripheral side of the processing chamber 201. On the nozzle 345b, the gas supply pipe 241 is connected to the center side of the rotating table 217, and the nozzle 345b supplies the raw material gas from the center side of the processing chamber 201. The nozzle 345b is fixed to the top plate 209 of the first processing area 206a, for example.

[0143] A plurality of (four in this embodiment) holes 355a in the shape of circular holes are formed at the front end of the downstream side of the gas flow on the side opposite to the concave portion 217b of the rotating table 217 (the substrate S on the rotating table 217) of the nozzle 345a. In addition, the nozzle 345a has a non-porous portion 365a for pyrolyzing the raw material gas on the upstream side of the gas flow. In other words, the nozzle 345a has a non-porous portion 365a on the side opposite to the heater 280 where no holes are formed.

[0144] A plurality of (four in this embodiment) holes 355b in the shape of circular holes are formed at the front end of the downstream side of the gas flow on the side opposite to the concave portion 217b of the rotating table 217 (the substrate S on the rotating table 217) of the nozzle 345b. In addition, the nozzle 345b has a non-porous portion 365b for pyrolyzing the raw material gas on the upstream side of the gas flow. In other words, the nozzle 345b has a non-porous portion 365b on the side opposite to the heater 280 where no holes are formed.

[0145] In this way, the nozzles 345 a and 345 b have non-porous portions 365 a and 365 b without holes formed on the sides facing the heater 280 , respectively, so that pyrolysis can be performed near the substrate S and the pyrolysis raw material gas can be supplied onto the substrate S.

[0146] The nozzle 345a extends radially from the wall 203a side of the processing container 203 toward the center side of the turntable 217. In addition, the nozzle 345b extends radially from the center side of the turntable 217 toward the wall 203a side of the processing container 203. The hole 355a and the hole 355b are respectively arranged at different positions in the radial direction of the substrate S. In this way, the supply positions of the raw material gas are placed at different positions opposite to each other, so that the heating distance to the hole 355a in the nozzle 345a and the heating distance to the hole 355b in the nozzle 345b can be made the same, and the pyrolysis amount of the raw material gas supplied to the substrate S is the same on the center side and the outer peripheral side of the turntable 217, and uniformity is achieved.

[0147] In addition, if Fig.11 As shown in (C), openings 375a and 375b may be provided at the front end of the downstream side of the gas flow of the nozzles 345a and 345b, respectively. In this way, the front end of the nozzle is open, so that gas stagnation in the nozzles 345a and 345b can be suppressed. In particular, the pyrolyzed raw material gas can be removed and discharged from the nozzles 345a and 345b. As a result, the generation of particles in the processing chamber 201 can be suppressed.

[0148] (Variation Example)

[0149] Next, refer to Fig.12 A modification of the exhaust port 296 provided at the center side of the processing chamber 201 of the reactor 200 included in the substrate processing apparatus 10 will be described.

[0150] In this embodiment, instead of the exhaust port 296 provided on the rotating table 217 , an exhaust port 293 serving as a second exhaust portion is provided on the top plate 209 on the central side of the rotating table 217 , closer to the center of the processing chamber 201 than the recess 217 b on which the substrate S is placed.

[0151] That is, an exhaust port 291 is provided at the outside of the first processing area 206a relative to the rotating table 217, and an exhaust port 293 is provided at the center side of the rotating table 217 in the first processing area 206a and at the top plate 209 outside the partition 294. Thus, the raw material gas pyrolyzed and supplied to the substrate S at the center side of the rotating table 217 and the raw material gas pyrolyzed and supplied to the substrate S at the outer peripheral side of the rotating table 217 can be discharged from the first processing area 206a through the exhaust port 293 and the exhaust port 291, respectively, so as to suppress the influence of the pyrolyzed raw material gas retained in the first processing area 206a on the substrate.

[0152] In addition, if Fig.13 As shown, an exhaust port 295 as a second exhaust portion may be provided in the partition 294. That is, the exhaust port 295 may be provided closer to the center of the processing chamber 201 than the recess 217b for mounting the substrate S in the first processing region 206a, and may be provided in the partition 294 provided on the surface opposite to the rotation axis of the rotating table 217.

[0153] That is, an exhaust port 291 is provided at the outer side of the first processing area 206a than the rotating table 217, and an exhaust port 295 is provided at the partition 294 of the top plate 209 at the center side of the rotating table 217 provided in the first processing area 206a. Thus, the raw material gas pyrolyzed and supplied to the substrate S at the center side of the rotating table 217 and the raw material gas pyrolyzed and supplied to the substrate S at the outer peripheral side of the rotating table 217 can be discharged from the first processing area 206a through the exhaust port 295 and the exhaust port 291, respectively, so as to suppress the influence of the pyrolyzed raw material gas retained in the first processing area 206a on the substrate.

[0154] As mentioned above, although embodiment of this disclosure is specifically described, this disclosure is not limited to the said embodiment, Various changes can be made within the range which does not deviate from the summary.

[0155] For example, in the above embodiment, the hole formed in the nozzle for supplying the raw material gas is described as a circular hole, but the present invention is not limited thereto and may be a long hole, a notch, or the like.

[0156] In addition, in the above-mentioned embodiment, the case where the length of the nozzles 245a~245d gradually becomes shorter from the upstream side to the downstream side in the rotation direction R of the substrate S is described, but it is not limited to this. The length of the nozzles 245a~245d can also be configured to gradually become longer from the upstream side to the downstream side in the rotation direction R of the substrate S.

[0157] In addition, in the above-mentioned embodiment, the case where the nozzle diameter of the nozzles 245a~245d gradually decreases from the upstream side to the downstream side of the rotation direction R of the substrate S is described, but it is not limited to this. The nozzle diameter of the nozzles 245a~245d can also be configured to gradually increase from the upstream side to the downstream side of the rotation direction of the substrate S.

[0158] Furthermore, in the above-mentioned embodiment, the case where Si2H2Cl2 gas is used as the raw material gas, NH3 gas is used as the reaction gas, and a SiN film is formed as a nitride film on the substrate S is described, but SiH4, Si2H6, Si3H8, aminosilane, TSA gas may also be used as the raw material gas. O2 gas may also be used as the reaction gas to form an oxide film. Other nitride films such as TaN and TiN, oxide films such as HfO, ZrO, and SiO, and metal films such as Ru, Ni, and W may also be formed on the substrate S. In addition, when forming a TiN film or a TiO film, for example, titanium tetrachloride (TiCl4) or the like may be used as the raw material gas.

[0159] (Preferred embodiment of the present disclosure)

[0160] The preferred embodiments of the present disclosure are described below.

[0161] (Note 1)

[0162] A substrate processing device, comprising:

[0163] a processing chamber for processing a substrate;

[0164] a substrate supporting portion disposed in the processing chamber and having a plurality of placing portions for placing the substrate;

[0165] a main nozzle disposed opposite to the mounting portion and having a first non-porous portion for pyrolyzing the processing gas; and

[0166] The auxiliary nozzle is provided to face the mounting portion and has a second non-porous portion for pyrolyzing the processing gas.

[0167] (Note 2)

[0168] According to the substrate processing device described in Supplementary Note 1,

[0169] A heating portion for heating the substrate is provided below or inside the substrate supporting portion.

[0170] The first non-porous portion and the second non-porous portion are provided at positions facing the heating portion.

[0171] (Note 3)

[0172] According to the substrate processing device described in Supplement 1 or Supplement 2,

[0173] The auxiliary nozzles are provided with a plurality of

[0174] The plurality of auxiliary nozzles are configured to have different lengths from an upstream side to a downstream side in a rotation direction of the substrate.

[0175] (Note 4)

[0176] According to the substrate processing device described in Supplementary Note 3,

[0177] The plurality of auxiliary nozzles are configured such that the lengths thereof gradually decrease from the upstream side to the downstream side in the rotation direction of the substrate.

[0178] (Note 5)

[0179] The substrate processing apparatus according to any one of Supplementary Notes 1 to 4,

[0180] The auxiliary nozzles are provided with a plurality of

[0181] The plurality of auxiliary nozzles are configured such that nozzle diameters vary from an upstream side to a downstream side in a rotation direction of the substrate.

[0182] (Note 6)

[0183] According to the substrate processing device described in Supplementary Note 5,

[0184] The plurality of auxiliary nozzles are configured such that nozzle diameters gradually decrease from the upstream side to the downstream side in the rotation direction of the substrate.

[0185] (Note 7)

[0186] According to the substrate processing device described in Supplementary Note 5,

[0187] The plurality of auxiliary nozzles are configured such that nozzle diameters gradually increase from the upstream side to the downstream side in the rotation direction of the substrate.

[0188] (Note 8)

[0189] According to the substrate processing device described in Supplement 1 or Supplement 2,

[0190] The auxiliary nozzles are provided with a plurality of

[0191] The plurality of auxiliary nozzles are arranged to have different lengths from the upstream side to the downstream side in the rotation direction of the substrate, and are configured such that the length of the auxiliary nozzle is proportional to the diameter of the auxiliary nozzle.

[0192] (Note 9)

[0193] The substrate processing device according to any one of Supplement 1, Supplement 2 or Supplement 8,

[0194] The auxiliary nozzles are provided with a plurality of

[0195] The plurality of auxiliary nozzles are arranged such that nozzle diameters are different from the upstream side to the downstream side in the rotation direction of the substrate, and the diameters of the auxiliary nozzles are proportional to the diameters of the holes provided in the auxiliary nozzles.

[0196] (Note 10)

[0197] According to the substrate processing device described in Supplement 1 or Supplement 2,

[0198] Either the main nozzle or the auxiliary nozzle is connected to a gas supply system in such a manner that the processing gas is supplied from the outer peripheral side of the processing chamber.

[0199] The other of the main nozzle and the auxiliary nozzle is connected to a gas supply system so as to supply the processing gas from the center side of the processing chamber.

[0200] (Note 11)

[0201] The substrate processing apparatus according to any one of Supplementary Notes 1 to 10,

[0202] The main nozzle and the auxiliary nozzle are configured such that their front ends are open.

[0203] (Note 12)

[0204] The substrate processing apparatus according to any one of Supplementary Notes 1 to 11,

[0205] A first exhaust portion for exhausting the processing gas is provided outside the substrate supporting portion.

[0206] (Note 13)

[0207] The substrate processing apparatus according to any one of Supplementary Notes 1 to 12,

[0208] A second exhaust portion for exhausting the processing gas is provided on a central side of the processing chamber relative to the substrate.

[0209] (Note 14)

[0210] According to the substrate processing device described in Supplementary Note 13,

[0211] The second exhaust portion is provided on a ceiling side of the processing chamber.

[0212] (Note 15)

[0213] According to the substrate processing device described in Supplementary Note 13,

[0214] The second exhaust unit is provided on a surface of a partition provided on a central side of the processing chamber and facing the rotation axis of the substrate supporting unit.

[0215] (Note 16)

[0216] According to the substrate processing device described in Supplementary Note 13,

[0217] The second exhaust portion is provided on the center side of the placement portion of the substrate supporting portion.

[0218] (Note 17)

[0219] A method for manufacturing a semiconductor device,

[0220] The invention has a process of supplying a processing gas from a main nozzle and an auxiliary nozzle. The main nozzle is arranged opposite to a substrate placed on a supporting portion in a processing chamber, and has a first non-porous portion for pyrolyzing the processing gas. The auxiliary nozzle is arranged opposite to the supporting portion, and has a second non-porous portion for pyrolyzing the processing gas.

[0221] (Note 18)

[0222] A program for causing a substrate processing device to execute the following steps through a computer,

[0223] In the step, a processing gas is supplied from a main nozzle and an auxiliary nozzle. The main nozzle is arranged opposite to a substrate placed on a mounting portion in a processing chamber of a substrate processing device, and has a first non-porous portion for causing the processing gas to be in a pyrolysis state. The auxiliary nozzle is arranged opposite to the mounting portion, and has a second non-porous portion for causing the processing gas to be in a pyrolysis state.

[0224] (Note 19)

[0225] A storage medium is a computer-readable storage medium and stores a program for causing a substrate processing device to execute the following steps through a computer.

[0226] In the step, a processing gas is supplied from a main nozzle and an auxiliary nozzle. The main nozzle is arranged opposite to a substrate placed on a mounting portion in a processing chamber of a substrate processing device, and has a first non-porous portion for causing the processing gas to be in a pyrolysis state. The auxiliary nozzle is arranged opposite to the mounting portion, and has a second non-porous portion for causing the processing gas to be in a pyrolysis state.

Claims

1. A substrate processing device, characterized in that: have: a processing chamber that processes the substrate; A substrate supporting portion, which is disposed in the processing chamber and has a plurality of placing portions for placing the substrate; a main nozzle extending in a radial direction from a wall side of the processing chamber toward a center side of the substrate supporting portion, disposed opposite to a surface of the substrate mounted on the mounting portion, and having a first non-porous portion for pyrolyzing a raw material gas; as well as an auxiliary nozzle extending in a radial direction from a wall side of the processing chamber toward a center side of the substrate supporting portion, and arranged opposite to a surface of the substrate placed on the placing portion, and having a second non-porous portion for pyrolyzing the raw material gas, The substrate processing device is provided with a plurality of the auxiliary nozzles. The plurality of auxiliary nozzles are configured such that nozzle diameters vary from the upstream side to the downstream side in the rotation direction of the substrate.

2. The substrate processing device according to claim 1, characterized in that: A heating portion for heating the substrate is provided below or inside the substrate supporting portion. The first non-porous portion and the second non-porous portion are provided at positions facing the heating portion.

3. The substrate processing device according to claim 1, characterized in that: There are a plurality of auxiliary nozzles, The plurality of auxiliary nozzles are configured to have different lengths from an upstream side to a downstream side in a rotation direction of the substrate.

4. The substrate processing device according to claim 3, characterized in that: The plurality of auxiliary nozzles are configured such that their lengths gradually decrease from the upstream side to the downstream side in the rotation direction of the substrate.

5. The substrate processing apparatus according to claim 1, wherein: The plurality of auxiliary nozzles are configured such that nozzle diameters gradually decrease from the upstream side to the downstream side in the rotation direction of the substrate.

6. The substrate processing apparatus according to claim 1, wherein: The plurality of auxiliary nozzles are configured such that nozzle diameters gradually increase from the upstream side to the downstream side in the rotation direction of the substrate.

7. The substrate processing apparatus according to claim 1, wherein: The plurality of auxiliary nozzles are arranged to have different lengths from the upstream side to the downstream side in the rotation direction of the substrate, and are configured such that the length of the auxiliary nozzle is proportional to the diameter of the auxiliary nozzle.

8. The substrate processing apparatus according to claim 1, wherein: The plurality of auxiliary nozzles are configured such that a diameter of the auxiliary nozzle is proportional to a diameter of a hole provided in the auxiliary nozzle.

9. The substrate processing apparatus according to claim 1, wherein: Either the main nozzle or the auxiliary nozzle is connected to a gas supply system in such a manner that the raw material gas is supplied from the outer peripheral side of the processing chamber. The other of the main nozzle and the auxiliary nozzle is connected to a gas supply system so as to supply the raw material gas from the center side of the processing chamber.

10. The substrate processing apparatus according to claim 1, wherein: The main nozzle and the auxiliary nozzle are configured such that their front ends are open.

11. The substrate processing apparatus according to claim 1, wherein: A first exhaust portion for exhausting the source gas is provided on the outer side of the substrate supporting portion.

12. The substrate processing apparatus according to claim 1, wherein: A second exhaust portion for exhausting the source gas is provided on a central side of the processing chamber relative to the substrate.

13. The substrate processing apparatus according to claim 12, wherein: The second exhaust portion is provided on a ceiling side of the processing chamber.

14. The substrate processing apparatus according to claim 12, wherein: The second exhaust unit is provided on a surface of a partition provided on a central side of the processing chamber and facing the rotation axis of the substrate supporting unit.

15. The substrate processing apparatus according to claim 12, wherein: The second exhaust portion is provided on the center side of the placement portion of the substrate supporting portion.

16. The substrate processing apparatus according to claim 1, wherein: The main nozzle has a first hole at the front end, The length of the first non-hole portion is configured to be longer than the length of the position where the first hole is provided. The auxiliary nozzle has a second hole at the front end, The length of the second non-hole portion is configured to be longer than the length of the position where the second hole is provided.

17. A method for manufacturing a semiconductor device, characterized in that: The invention has a process of supplying raw material gas from a main nozzle and a plurality of auxiliary nozzles respectively, wherein the main nozzle extends radially from the wall side of the processing chamber toward the center side of the substrate supporting part, and is arranged opposite to the surface of the substrate placed on the placing part, and has a first non-porous portion for making the raw material gas into a pyrolysis state, wherein the placing part is arranged on the substrate supporting part in the processing chamber, and the plurality of auxiliary nozzles extend radially from the wall side of the processing chamber toward the center side of the substrate supporting part, and are arranged opposite to the surface of the substrate placed on the placing part, and has a second non-porous portion for making the raw material gas into a pyrolysis state, and is constructed so that the nozzle diameters are different from the upstream side to the downstream side in the rotation direction of the substrate.

18. A storage medium, which is a computer-readable storage medium, characterized in that: A program is stored which causes the substrate processing apparatus to execute the following steps through a computer. In the steps, raw gas is supplied respectively from a main nozzle and a plurality of auxiliary nozzles, the main nozzle radially extending from a wall side of a processing chamber of the substrate processing device toward a center side of a substrate supporting portion, and being disposed opposite to a surface of a substrate mounted on the mounting portion, and having a first non-porous portion for causing the raw material gas to be in a pyrolysis state, wherein the mounting portion is disposed on the substrate supporting portion in the processing chamber, the plurality of auxiliary nozzles radially extending from a wall side of the processing chamber toward a center side of the substrate supporting portion, and being disposed opposite to a surface of the substrate mounted on the mounting portion, and having a second non-porous portion for causing the raw material gas to be in a pyrolysis state, and being configured so that nozzle diameters are different from the upstream side to the downstream side in the rotation direction of the substrate.

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