A light energy generating device for electric curtain

Abstract

The present invention discloses a light energy generating device for electric curtains, which comprises a base, a light energy board mounted on the base, and a light focusing device, wherein the light focusing device is arranged above the light energy board; the light energy board comprises a substrate, an n-type amorphous silicon layer, an i-type amorphous silicon layer, a p-type amorphous silicon layer and an anti-reflection layer arranged on the front of the substrate in sequence, and a nano copper particle layer and an aluminum electric field layer arranged on the back of the substrate in sequence; the light energy board has an open circuit voltage of ≥13.5V under the illumination condition of 500Lux, a working current of ≥22mA, and a working voltage of 15-17V. By implementing the present invention, a good light trapping structure can be formed on the back of the light energy board, effectively improving the spectral response capability of the light energy board, so that it can provide sufficient energy to drive the electric curtain under weak light conditions such as cloudy days and indoor light.

Description

Technical Field

[0001] The invention relates to the technical field of electric curtain accessories, and in particular to a light energy device for electric curtains. Background Art

[0002] At present, the sunshade products on the market control the opening and closing of curtains by rotating motors to block sunlight. The power supply of the motor can be generated by an external household power supply or by solar thermal radiation. The former power supply method requires wiring, which affects the beauty of the wall and increases the difficulty of installation. If the latter power supply method is adopted, it is impossible to obtain sufficient sunlight on cloudy days and sufficient and stable electricity. In response to the above problems, the inventor proposed a technical solution of combining lithium batteries and solar panels in the previous application (202010297520.9). By storing the excess electricity generated by solar panels when there is sufficient light in lithium batteries, and controlling multiple drive motors through a group control system, the driving problem under weak light conditions such as cloudy days is solved. However, adding lithium batteries will make the controller larger; at the same time, the group control system also increases the production cost. In addition, in order to generate additional electricity, it is also necessary to increase the volume of solar cells. One is not beautiful enough, and the other will increase the cost. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a light energy device for electric curtains, which can generate sufficient energy to drive the electric curtains under weak light conditions such as ordinary lighting and cloudy days.

[0004] In order to solve the above technical problems, the present invention provides a light energy generating device for electric curtains, which comprises a base and at least one light energy panel installed on the base;

[0005] The solar panel comprises a substrate, an n-type amorphous silicon layer, an i-type amorphous silicon layer, a p-type amorphous silicon layer and an anti-reflection layer sequentially arranged on the front side of the substrate, and a nano copper particle layer and an aluminum electric field layer sequentially arranged on the back side of the substrate;

[0006] Under the illumination condition of 500 Lux, the open circuit voltage of the solar panel is ≥13.5 V, the operating current is ≥22 mA, and the operating voltage is 15-17 V.

[0007] As an improvement of the above technical solution, it also includes a focusing device installed on the base, and the focusing device is arranged above the light energy panel; the focusing device is a Fresnel lens.

[0008] As an improvement of the above technical solution, the nano copper particle layer is composed of a plurality of mutually separated nano copper particles, the particle size of a single nano copper particle is 400-500 nm, and the distance between different nano copper particles is 0.8-3 μm;

[0009] The thickness of the n-type amorphous silicon layer is 50-100 nm, the thickness of the i-type amorphous silicon layer is 200-400 nm, and the thickness of the p-type amorphous silicon layer is 50-100 nm.

[0010] As an improvement of the above technical solution, the substrate is ITO transparent conductive glass, the anti-reflection layer is an ITO layer, a ZAO layer, a FTO layer or an IZO layer, and the thickness of the anti-reflection layer is 200 to 500 nm.

[0011] As an improvement of the above technical solution, the base includes a bottom plate and a side plate, and the side plate is provided with a first slide groove for installing the light energy panel and a second slide groove for installing the focusing device;

[0012] The height of the first chute:the height of the second chute=1:(3-10).

[0013] As an improvement of the above technical solution, the method for preparing the solar panel includes:

[0014] (1) providing a substrate;

[0015] (2) texturing the front side of the substrate;

[0016] (3) using a first solution containing an aminosilane coupling agent to clean the substrate after the texturing treatment;

[0017] (4) sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer, and a p-type amorphous silicon layer on the front surface of the cleaned substrate;

[0018] (5) forming an anti-reflection layer on the p-type amorphous silicon layer to obtain a substrate;

[0019] (6) placing the substrate in a copper particle sol solution to form a nano copper particle layer on the back side of the substrate;

[0020] (7) forming an aluminum electric field layer on the nano copper particle layer to obtain a finished solar panel;

[0021] The preparation method of the copper particle sol solution is as follows: a cupric chloride aqueous solution and a polyvinyl pyrrolidone aqueous solution are uniformly mixed, and a hydrazine hydrate solution is added to obtain a copper particle sol solution after reaction.

[0022] As an improvement of the above technical solution, step (2) includes:

[0023] (2.1) forming an ink protection layer on the back side of the substrate;

[0024] (2.2) placing the substrate provided with the ink protective layer in a mixed solution of hydrogen peroxide and concentrated sulfuric acid, and etching at 60 to 80° C. for 5 to 10 hours to perform texturing treatment on the front side of the substrate;

[0025] (2.3) Removing the ink protection layer on the back side of the substrate.

[0026] As an improvement of the above technical solution, step (3) includes:

[0027] (3.1) Cleaning the textured substrate with pure water and ethanol in turn;

[0028] (3.2) The cleaned substrate is dried, then immersed in a first solution having a concentration of 1 to 3 vol% for 5 to 10 hours, and then taken out and dried.

[0029] As an improvement of the above technical solution, the aminosilane coupling agent is selected from N-β (aminoethyl) -γ-aminopropyltrimethoxysilane or γ-aminopropyltrimethoxysilane;

[0030] The concentration of the copper chloride aqueous solution is 0.2-2 mol / L, the concentration of the polyvinyl pyrrolidone aqueous solution is 0.1-1.5 mol / L, and the concentration of the hydrazine hydrate solution is 0.3-5 mol / L.

[0031] As an improvement of the above technical solution, step (6) includes:

[0032] (6.1) preparing a copper particle sol solution;

[0033] (6.2) placing the substrate in a copper particle sol solution and keeping the solution at 30 to 50° C. for 10 to 15 hours to form a nano copper particle layer on the back of the substrate;

[0034] (6.3) Clean the substrate with pure water and ethanol in turn, and blow dry with nitrogen or argon.

[0035] The implementation of the present invention has the following beneficial effects:

[0036] 1. The light energy generating device for electric curtains of the present invention comprises a base, a light energy board mounted on the base, and a light focusing device. The light focusing device can focus weaker light on the surface of the light energy board to improve conversion efficiency.

[0037] 2. The solar panel of the present invention has a nano copper particle layer prepared on the back of the substrate, which can form a light trapping structure with good effect, effectively improving the spectral response ability of the solar panel, so that it can provide enough energy to drive the electric curtain under weak light conditions such as cloudy days and indoor light.

[0038] 3. The light energy generating device for the electric curtain of the present invention is provided with two slide grooves on the base, and the light energy panel and the focusing device are installed in the slide grooves; after adopting the above structure, multiple light energy panels and multiple focusing devices can be installed on the base, so that the light energy panel can be extended and the conversion efficiency can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a structural schematic diagram of a light energy generating device for electric curtains of the present invention;

[0040] Figure 2 It is a schematic structural diagram of the solar panel of the present invention.

[0041] Figure 3 It is a flow chart of the method for preparing the solar energy panel of the present invention. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings. It is hereby stated that the directional terms such as up, down, left, right, front, back, inside, outside, etc. that appear or will appear in the text of the present invention are only based on the accompanying drawings of the present invention, and are not specific limitations of the present invention.

[0043] refer to Figure 1 The present invention provides a light energy generating device for an electric curtain, which includes a base 1, a light energy panel 2 and a focusing device 3; the light energy panel 2 and the focusing device 3 are sequentially mounted on the base 1, and the focusing device 3 is located above the light energy panel 2, so that weak light can be focused onto the light energy panel 2 through the focusing device 3, thereby improving its conversion efficiency.

[0044] Specifically, the base 1 includes a bottom plate 11 and a side plate 12. The side plate 12 is provided with a first slide groove 13 for installing the light energy panel 2 and a second slide groove 14 for installing the focusing device. The light energy panel cable is placed between the first slide groove 13 and the bottom plate 11, which can prevent the cable from being crushed and facilitate the placement of the light energy panel splicing cable. With this structure of the base, multiple light energy panels 2 and multiple focusing devices 3 can be installed on each base 1, thereby extending the light energy panel and facilitating the use of various scenes.

[0045] Furthermore, the height of the first slide groove H1: the height of the second slide groove H2 is controlled to be 1: (3-10). Preferably, H1: H2 = 1: 6-9. This height relationship can ensure that the focusing device can focus light incident at various angles.

[0046] Specifically, the focusing device 3 may be a convex lens, but is not limited thereto. Preferably, the focusing device 3 is a Fresnel lens.

[0047] Specifically, refer to Figure 2The solar panel 2 includes a substrate 21, an n-type amorphous silicon layer 22, an i-type amorphous silicon layer 23, a p-type amorphous silicon layer 24 and an anti-reflection layer 25 sequentially arranged on the front side of the substrate 21, and a nano-copper particle layer 26 and an aluminum electric field layer 27 sequentially arranged on the back side of the substrate 21. Among them, the nano-copper particle layer 26 is composed of a plurality of mutually separated nano-copper particles, the particle size of a single nano-copper particle is 400-500nm, and the distance between different nano-copper particles is 0.8-3μm. The solar panel based on the above structure can effectively improve the spectral response capability of the solar panel, so that it can provide sufficient energy to drive the electric curtain under weak light conditions such as cloudy days and indoor light. Specifically, the indoor light can be a metal halide lamp.

[0048] Specifically, the thickness of the n-type amorphous silicon layer is 50-100 nm, the thickness of the i-type amorphous silicon layer is 200-400 nm, and the thickness of the p-type amorphous silicon layer is 50-100 nm. The nip structure with this thickness can improve the light conversion efficiency.

[0049] Specifically, the anti-reflection layer 25 is an ITO layer, a ZAO layer, a FTO layer or an IZO layer, and its thickness is 200-500 nm. Preferably, the anti-reflection layer 25 is an ITO layer or an IZO layer, and its thickness is 300-400 nm.

[0050] For details, see Figure 3 The preparation method of the solar panel of the present invention is as follows:

[0051] S1: providing a substrate;

[0052] Specifically, the substrate can be glass, ceramic plate, stainless steel, but is not limited thereto. Preferably, in the invention, the substrate is ITO transparent conductive glass, which has excellent compatibility with silicon structure and excellent conductivity.

[0053] S2: texturing the front side of the substrate;

[0054] Specifically, S2 includes:

[0055] S21: forming an ink protection layer on the back side of the substrate;

[0056] Specifically, a layer of acid-resistant ink can be printed on the back of the substrate using a screen printing process to obtain an ink protection layer;

[0057] S22: placing the substrate provided with the ink protection layer into a mixed solution of hydrogen peroxide and concentrated sulfuric acid, and etching at 60 to 80° C. for 5 to 10 hours to perform texturing treatment on the front side of the substrate;

[0058] S23: removing the ink protection layer on the back side of the substrate.

[0059] Specifically, an alkaline solution (such as NaOH, but not limited thereto) may be used for soaking to remove the acid-resistant ink layer.

[0060] S3: using a first solution containing an aminosilane coupling agent to clean the textured substrate;

[0061] Specifically, S3 includes:

[0062] S31: cleaning the textured substrate with pure water and ethanol in sequence;

[0063] Specifically, the substrate is first placed in pure water and ultrasonically cleaned for 50 to 70 minutes; then the substrate is placed in ethanol and soaked for 1 to 2 hours.

[0064] S32: Dry the cleaned substrate, then soak it in a first solution with a concentration of 1 to 3 vol% for 5 to 10 hours, and then take it out and dry it.

[0065] Specifically, the first solution is an aqueous solution containing an aminosilane coupling agent, and the concentration of the aminosilane coupling agent is 1-3 vol%, and illustratively may be 1 vol%, 1.3 vol%, 1.8 vol%, 2.1 vol%, 2.7 vol%, but is not limited thereto.

[0066] Specifically, the aminosilane coupling agent may be N-β (aminoethyl)-γ-aminopropyltrimethoxysilane or γ-aminopropyltrimethoxysilane, but is not limited thereto.

[0067] S4: forming an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer in sequence on the front surface of the cleaned substrate;

[0068] Specifically, the cleaned substrate is placed in a vacuum chamber, and an n-type amorphous silicon layer, an i-type amorphous silicon layer and a p-type amorphous silicon layer are deposited on the front side of the substrate using plasma chemical vapor deposition (PCVD), but the method is not limited to this.

[0069] The deposition of the n-type amorphous silicon layer and the p-type amorphous silicon layer can be carried out by using the common processes in the art. During the deposition of the i-type amorphous silicon layer, a mixed gas of SiH4 and H2 is used as the reaction gas, the deposition temperature is 150-180°C, the pressure is 0.8-1.2 torr, and SiH4:H2 is controlled to be ≤0.18 (vol); under this condition, H2 can effectively dilute SiH4 and reduce a-Si:H defects.

[0070] S5: forming an anti-reflection layer on the p-type amorphous silicon layer to obtain a substrate;

[0071] Specifically, the anti-reflection layer can be formed by sputtering or chemical vapor deposition (CVD); preferably, the anti-reflection layer is formed by a medium frequency pulse magnetron sputtering system, which has a low cost and a fast deposition rate. Specifically, the sputtering temperature is 150-170°C and the sputtering pressure is 1-2.2 Pa. The anti-reflection layer formed under these conditions has a low resistivity and relatively few defects in the anti-reflection layer film.

[0072] Specifically, the anti-reflection layer may be an ITO layer, a ZAO layer, a FTO layer or an IZO layer; preferably, an ITO layer or an IZO layer is selected.

[0073] S6: placing the substrate into the copper particle sol solution to form a nano copper particle layer on the back side of the substrate;

[0074] Specifically, S6 includes:

[0075] S61: preparing a copper particle sol solution;

[0076] Specifically, a cupric chloride aqueous solution and a polyvinyl pyrrolidone aqueous solution are uniformly mixed, and a hydrazine hydrate solution is added to obtain a copper particle sol solution after reaction.

[0077] Wherein, the concentration of the copper chloride aqueous solution is 0.2-2 mol / L, the concentration of the polyvinyl pyrrolidone aqueous solution is 0.1-1.5 mol / L, and the concentration of the hydrazine hydrate solution is 0.3-5 mol / L.

[0078] The volume ratio of the copper chloride aqueous solution to polyvinyl pyrrolidone is 1:(5-10); and the molar ratio of the copper chloride to hydrazine hydrate is 1:1.2-1.5.

[0079] S62: placing the substrate in a copper particle sol solution, keeping the temperature at 30-50° C. for 10-15 hours, and forming a nano copper particle layer on the back of the substrate;

[0080] Specifically, by soaking the substrate, a nano copper particle layer can be formed on the back of the substrate through a chemical self-assembly process, which is composed of a plurality of mutually separated nano copper particles, the particle size of a single nano copper particle is 400-500nm, and the distance between different nano copper particles is 0.8-3μm. The above-mentioned structured nano copper particle layer can cooperate with the textured structure and anti-reflection layer arranged on the front of the substrate to form a light trapping structure with good performance, effectively improving the spectral response ability of the solar panel, so that it can provide enough energy to drive the electric curtain under weak light conditions such as cloudy days and indoor light.

[0081] S63: Clean the substrate with pure water and ethanol in sequence, and blow dry with nitrogen or argon.

[0082] Specifically, the substrate is first placed in pure water and ultrasonically cleaned for 30 to 60 minutes; then the substrate is placed in ethanol and soaked for 1 to 2 hours.

[0083] S7: forming an aluminum electric field layer on the nano copper particle layer to obtain a finished solar panel;

[0084] Specifically, the aluminum electric field layer may be formed by sputtering, chemical vapor deposition or screen printing; preferably, the aluminum electric field layer is formed by screen printing, which has low cost.

[0085] Furthermore, the method for preparing the solar panel of the present invention further comprises:

[0086] S8: Packaging the finished solar panels.

[0087] Specifically, the solar panel can be laminated with tempered glass or EVA glass, but the invention is not limited thereto.

[0088] The solar panel prepared by the above method has an open circuit voltage of ≥13.5V, a working current of ≥22mA and a working voltage of 15-17V under a light condition of 500Lux.

[0089] The present invention is further described below with specific embodiments:

[0090] Example 1

[0091] This embodiment provides a light energy device for electric curtains. Figure 1 , which comprises a base 1, a light energy panel 2 and a light concentrator 3, wherein the light energy panel 2 is installed in a first slide groove 13, and the light concentrator 3 is installed in a second slide groove 14. The height H1 of the first slide groove: the height H2 of the second slide groove = 1:8. The light concentrator 3 uses a Fresnel lens.

[0092] The light energy panel 2 adopts the light energy panel in Example 4, and is laminated with the tempered glass and the EVA glass before use.

[0093] Example 2

[0094] This embodiment provides a method for preparing a solar panel, which includes:

[0095] (1) providing a substrate;

[0096] Wherein, the substrate is ITO transparent conductive glass;

[0097] (2) texturing the front side of the substrate;

[0098] Specifically, an ink protective layer is first formed on the back of the substrate, and then placed in a mixed solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:3, and corroded for 6 hours; after being taken out, NaOH is used to wash away the ink protective layer.

[0099] (3) using a first solution containing an aminosilane coupling agent to clean the substrate after the texturing treatment;

[0100] Specifically, the substrate was firstly cleaned with pure water ultrasonically for 1 hour, and then immersed in ethanol for 1 hour; and then the substrate was placed in a 1 vol % γ-aminopropyltrimethoxysilane aqueous solution and immersed for 6 hours.

[0101] (4) sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer, and a p-type amorphous silicon layer on the front surface of the cleaned substrate;

[0102] When forming the i-type amorphous silicon layer, SiH4:H2=1.5:10; the temperature is 160° C., and the pressure is 1 torr.

[0103] (5) forming an anti-reflection layer on the p-type amorphous silicon layer to obtain a substrate;

[0104] Among them, a medium frequency pulse magnetron sputtering system is used to form the ZAO layer, the sputtering temperature is 150°C, and the sputtering pressure is 1.1Pa.

[0105] (6) placing the substrate in a copper particle sol solution to form a nano copper particle layer on the back side of the substrate;

[0106] Specifically, 0.3 mol / L copper chloride aqueous solution and 1.5 mol / L polyvinyl pyrrolidone aqueous solution are uniformly mixed in a ratio of 1:5, and 0.3 mol / L hydrazine hydrate solution is added to obtain a copper particle sol solution after reaction, wherein the molar ratio of copper chloride to hydrazine hydrate is 1:1.5.

[0107] The substrate was placed in a copper particle sol solution and kept at 50 degrees Celsius for 10 hours to obtain a nano copper particle layer.

[0108] (7) forming an aluminum electric field layer on the nano copper particle layer to obtain a finished solar panel;

[0109] An aluminum electric field layer is formed on the nano copper particle layer by using a screen printing process.

[0110] Example 3

[0111] This embodiment provides a method for preparing a solar panel, which includes:

[0112] (1) providing a substrate;

[0113] Wherein, the substrate is ITO transparent conductive glass;

[0114] (2) texturing the front side of the substrate;

[0115] Specifically, an ink protective layer is first formed on the back of the substrate, and then placed in a mixed solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:2 for corrosion for 8 hours; after being taken out, NaOH is used to wash away the ink protective layer.

[0116] (3) using a first solution containing an aminosilane coupling agent to clean the substrate after the texturing treatment;

[0117] Specifically, the substrate was firstly cleaned with pure water ultrasonically for 50 minutes and then immersed in ethanol for 1 hour; then the substrate was placed in a 1.5 vol% N-β (aminoethyl) -γ-aminopropyltrimethoxysilane aqueous solution and immersed for 5 hours.

[0118] (4) sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer, and a p-type amorphous silicon layer on the front surface of the cleaned substrate;

[0119] When forming the i-type amorphous silicon layer, SiH4:H2=1:9; the temperature is 160° C., and the pressure is 0.8 torr.

[0120] (5) forming an anti-reflection layer on the p-type amorphous silicon layer to obtain a substrate;

[0121] Among them, a medium frequency pulse magnetron sputtering system is used to form the IZO layer, the sputtering temperature is 150°C, and the sputtering pressure is 1.1Pa.

[0122] (6) placing the substrate in a copper particle sol solution to form a nano copper particle layer on the back side of the substrate;

[0123] Specifically, 1 mol / L copper chloride aqueous solution and 0.6 mol / L polyvinyl pyrrolidone aqueous solution are uniformly mixed in a ratio of 1:10, and 0.4 mol / L hydrazine hydrate solution is added to obtain a copper particle sol solution after reaction, wherein the molar ratio of copper chloride to hydrazine hydrate is 1:1.

[0124] The substrate was placed in a copper particle sol solution and kept warm at 35° C. for 12 hours to obtain a nano copper particle layer.

[0125] (7) forming an aluminum electric field layer on the nano copper particle layer to obtain a finished solar panel;

[0126] An aluminum electric field layer is formed on the nano copper particle layer by using a screen printing process.

[0127] Example 4

[0128] This embodiment provides a method for preparing a solar panel, which includes:

[0129] (1) providing a substrate;

[0130] Wherein, the substrate is ITO transparent conductive glass;

[0131] (2) texturing the front side of the substrate;

[0132] Specifically, an ink protection layer is first formed on the back of the substrate, and then placed in a mixed solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 3:7 and corroded for 8 hours; after being taken out, NaOH is used to wash away the ink protection layer.

[0133] (3) using a first solution containing an aminosilane coupling agent to clean the substrate after the texturing treatment;

[0134] Specifically, the substrate was first cleaned with pure water ultrasonically for 50 minutes and then immersed in ethanol for 1 hour; then the substrate was placed in a 2.1 vol% N-β (aminoethyl) -γ-aminopropyltrimethoxysilane aqueous solution and immersed for 7 hours.

[0135] (4) sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer, and a p-type amorphous silicon layer on the front surface of the cleaned substrate;

[0136] When forming the i-type amorphous silicon layer, SiH4:H2=1:9; the temperature is 170° C., and the pressure is 1.1 torr.

[0137] (5) forming an anti-reflection layer on the p-type amorphous silicon layer to obtain a substrate;

[0138] Among them, a medium frequency pulse magnetron sputtering system is used to form the ITO layer, the sputtering temperature is 160°C, and the sputtering pressure is 1.7Pa.

[0139] (6) placing the substrate in a copper particle sol solution to form a nano copper particle layer on the back side of the substrate;

[0140] Specifically, 1.4 mol / L copper chloride aqueous solution and 0.7 mol / L polyvinyl pyrrolidone aqueous solution are uniformly mixed in a ratio of 1:6, and 0.3 mol / L hydrazine hydrate solution is added to obtain a copper particle sol solution after reaction, wherein the molar ratio of copper chloride to hydrazine hydrate is 1:1.4.

[0141] The substrate was placed in a copper particle sol solution and kept warm at 40° C. for 14 hours to obtain a nano copper particle layer.

[0142] (7) forming an aluminum electric field layer on the nano copper particle layer to obtain a finished solar panel;

[0143] An aluminum electric field layer is formed on the nano copper particle layer by using a screen printing process.

[0144] Comparative Example 1

[0145] This comparative example provides a light energy panel for electric curtains, which differs from Example 3 in that step (6) is not included, that is, after step (5), an aluminum electric field layer is directly formed on the back of the substrate.

[0146] Comparative Example 2

[0147] This comparative example provides a light energy panel for electric curtains, which differs from Example 3 in that the substrate is not subjected to texturing treatment.

[0148] The performance of the light energy panels of Examples 2 to 4 and Comparative Examples 1 to 2 was tested, wherein a metal halide lamp was selected as the weak light source, and the illumination was 800 W / m 2 ; The strong light source uses a solar simulator with an illumination of 1200W / m 2 The test temperature is 25℃, AM1.5 spectrum. The test results are as follows:

[0149]

[0150] The above is a preferred embodiment of the invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the invention. These improvements and modifications are also considered to be within the scope of protection of the invention.

Claims

1. A light energy generating device for electric curtains, characterized in that: It includes a base and at least one light energy panel installed on the base; The solar panel comprises a substrate, an n-type amorphous silicon layer, an i-type amorphous silicon layer, a p-type amorphous silicon layer and an anti-reflection layer sequentially arranged on the front side of the substrate, and a nano copper particle layer and an aluminum electric field layer sequentially arranged on the back side of the substrate; The method for preparing the solar panel comprises: (1) providing a substrate; (2) texturing the front side of the substrate; (3) using a first solution containing an aminosilane coupling agent to clean the substrate after the texturing treatment; (4) sequentially forming an n-type amorphous silicon layer, an i-type amorphous silicon layer, and a p-type amorphous silicon layer on the front surface of the cleaned substrate; (5) forming an anti-reflection layer on the p-type amorphous silicon layer to obtain a substrate; (6) placing the substrate in a copper particle sol solution to form a nano copper particle layer on the back side of the substrate; (7) forming an aluminum electric field layer on the nano copper particle layer to obtain a finished solar panel; Step (6) comprises: (6.1) mixing a 0.2-2 mol / L copper chloride aqueous solution and a 0.1-1.5 mol / L polyvinyl pyrrolidone aqueous solution, and adding a 0.3-5 mol / L hydrazine hydrate solution to obtain a copper particle sol solution after reaction; (6.2) placing the substrate in a copper particle sol solution and keeping the solution at 30 to 50° C. for 10 to 15 hours to form a nano copper particle layer on the back of the substrate; (6.3) Clean the substrate with pure water and ethanol in turn, and blow dry with nitrogen or argon; Under the illumination condition of 500 Lux, the open circuit voltage of the solar panel is ≥13.5 V, the operating current is ≥22 mA, and the operating voltage is 15-17 V.

2. The light energy generating device for electric curtains according to claim 1, characterized in that: It also includes a light-concentrating device installed on the base, and the light-concentrating device is arranged above the light energy board; the light-concentrating device is a Fresnel lens.

3. The light energy generating device for electric curtains according to claim 1, characterized in that: The nano copper particle layer is composed of a plurality of mutually separated nano copper particles, the particle size of a single nano copper particle is 400-500 nm, and the distance between different nano copper particles is 0.8-3 μm; The thickness of the n-type amorphous silicon layer is 50-100 nm, the thickness of the i-type amorphous silicon layer is 200-400 nm, and the thickness of the p-type amorphous silicon layer is 50-100 nm.

4. The light energy generating device for electric curtains according to claim 1, characterized in that: The substrate is ITO transparent conductive glass, the anti-reflection layer is an ITO layer, a ZAO layer, a FTO layer or an IZO layer, and the thickness of the anti-reflection layer is 200-500 nm.

5. The light energy generating device for electric curtains according to claim 2, characterized in that: The base comprises a bottom plate and a side plate, and the side plate is provided with a first slide groove for mounting the light energy panel and a second slide groove for mounting the light focusing device; The height of the first chute:the height of the second chute=1:(3-10).

6. The light energy generating device for electric curtains according to claim 1, characterized in that: Step (2) comprises: (2.1) forming an ink protection layer on the back side of the substrate; (2.2) placing the substrate provided with the ink protective layer in a mixed solution of hydrogen peroxide and concentrated sulfuric acid, and etching at 60 to 80° C. for 5 to 10 hours to perform texturing treatment on the front side of the substrate; (2.3) Removing the ink protection layer on the back side of the substrate.

7. The light energy generating device for electric curtains according to claim 1, characterized in that: Step (3) includes: (3.1) Cleaning the textured substrate with pure water and ethanol in turn; (3.2) The cleaned substrate is dried, then immersed in a first solution having a concentration of 1 to 3 vol% for 5 to 10 hours, and then taken out and dried.

8. The light energy generating device for electric curtains according to claim 1, characterized in that: The aminosilane coupling agent is selected from N-β (aminoethyl)-γ-aminopropyltrimethoxysilane or γ-aminopropyltrimethoxysilane.

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