Light emitting device, light emitting module, electronic device, and method for manufacturing light emitting device

Abstract

A light-emitting device capable of prolonged display in a bent state is provided. A light-emitting device capable of repeated bending with a small radius of curvature is also provided. This invention is a flexible light-emitting device comprising a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is located on the first inorganic insulating layer. The light-emitting element is located on the first inorganic insulating layer, separated from the first organic insulating layer. The second inorganic insulating layer is located on the light-emitting element. The ends of both the first and second inorganic insulating layers are located inside the ends of the first organic insulating layer. The ends of the first organic insulating layer are exposed on the sides of the light-emitting device. Preferably, the first and second inorganic insulating layers are in contact with each other on the outer side of the ends of the light-emitting element.

Description

Technical Field

[0001] One aspect of the present invention relates to a light-emitting device, a light-emitting module, and an electronic device. Another aspect of the present invention relates to a method for manufacturing a light-emitting device. A particularly significant aspect of the present invention relates to a flexible light-emitting device and a method for manufacturing the same.

[0002] Note that one aspect of the present invention is not limited to the technical fields described above. Examples of technical fields for one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), driving methods for these devices, or manufacturing methods for these devices. Background Technology

[0003] Light-emitting elements (also referred to as "EL elements") that utilize electroluminescence (EL) have the characteristics of being easy to achieve in thin and lightweight form; being able to respond to input signals at high speed; and being able to be driven by a low-voltage DC power supply, and are expected to be applied to display devices or lighting devices.

[0004] Furthermore, the development of flexible devices in which functional elements such as semiconductor elements, display elements, or light-emitting elements are disposed on a flexible substrate (hereinafter also referred to as "flexible substrate") has progressed. Typical examples of flexible devices include, in addition to lighting devices and image display devices, various semiconductor circuits including semiconductor elements such as transistors.

[0005] Patent document 1 discloses a flexible light-emitting device using organic EL elements.

[0006] [Preliminary Technology Documents]

[0007] [Patent Literature]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 2014-197522 Summary of the Invention

[0009] The technical problem that the invention aims to solve

[0010] Applications of light-emitting devices using EL elements are anticipated, such as electronic devices with curved displays or electronic devices capable of folding displays. Therefore, improving the bending resistance of light-emitting devices is important. Light-emitting devices with curved surfaces need to be displayed for extended periods in a bent state. Furthermore, foldable light-emitting devices need to be able to withstand repeated bending (specifically, more than 50,000 repeated bending cycles, and more than 100,000 repeated bending cycles).

[0011] Patent document 1 has investigated a method for peeling off semiconductor elements or light-emitting elements formed on a glass substrate with a release layer and transferring them to a flexible substrate. This method allows for increasing the formation temperature of the semiconductor elements and manufacturing light-emitting devices with extremely high reliability. For practical applications, high-yield manufacturing of flexible light-emitting devices is required.

[0012] One objective of this invention is to provide a light-emitting device capable of prolonged display in a bent state. Another objective of this invention is to provide a light-emitting device capable of repeated bending with a small radius of curvature. One objective of this invention is to provide a highly reliable light-emitting device. One objective of this invention is to provide a light-emitting device that is not easily damaged. One objective of this invention is to achieve a thinner or lighter light-emitting device. One objective of this invention is to provide an electronic device comprising a flexible display section or a curved display section.

[0013] One objective of this invention is to provide a method for manufacturing a light-emitting device with high yield. Another objective of this invention is to provide a method for manufacturing a light-emitting device with high productivity. Finally, another objective of this invention is to provide a method for manufacturing a light-emitting device with low cost.

[0014] Note that the description of these objectives does not preclude the existence of other objectives. One aspect of the invention does not necessarily require achieving all of the above objectives. Objectives other than those described above can be extracted from the description, drawings, and claims.

[0015] means of solving technical problems

[0016] One aspect of the present invention is a light-emitting device comprising a light-emitting portion and a pair of first regions. The pair of first regions are regions including the ends of the light-emitting device and without an inorganic film extending from the light-emitting portion. The light-emitting portion is located between the pair of first regions. Both the light-emitting portion and the pair of first regions are flexible.

[0017] The aforementioned light-emitting device preferably further includes an external connection terminal and a wiring portion. The wiring portion is preferably located between the light-emitting portion and the external connection terminal. The pair of first regions are preferably regions where an inorganic film extending into the wiring portion is not disposed. The wiring portion is preferably located between the pair of first regions. The wiring portion is preferably flexible.

[0018] The aforementioned light-emitting device preferably further includes external connection terminals, wiring portions, and a pair of second regions. The pair of second regions preferably include the ends of the light-emitting device and are not provided with an inorganic film extending from the wiring portions. The wiring portions are preferably located between the pair of second regions. Both the wiring portions and the pair of second regions are preferably flexible.

[0019] One aspect of the present invention is a light-emitting device comprising a light-emitting portion and a frame-shaped region. The frame-shaped region includes the end of the light-emitting device and does not have an inorganic film extending from the light-emitting portion. The light-emitting portion is located inside the frame-shaped region. Both the light-emitting portion and the frame-shaped region are flexible. The light-emitting device preferably also includes external connection terminals and wiring portions. The frame-shaped region is preferably a region without an inorganic film extending from the wiring portions. The wiring portions are preferably located inside the frame-shaped region. The wiring portions are preferably flexible.

[0020] One aspect of the present invention is a flexible light-emitting device, comprising a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is located on the first inorganic insulating layer. The light-emitting element is located on the first inorganic insulating layer, separated from the first organic insulating layer. The second inorganic insulating layer is located on the light-emitting element. The ends of both the first and second inorganic insulating layers are located inside the ends of the first organic insulating layer. The ends of the first organic insulating layer are exposed on the sides of the light-emitting device. Preferably, the first and second inorganic insulating layers are in contact with each other on the outer side of the ends of the light-emitting element. The first organic insulating layer preferably includes an opening on the outer side of the ends of the light-emitting element. Preferably, the first and second inorganic insulating layers are in contact with each other within the opening. The light-emitting device preferably also includes a second organic insulating layer. The first organic insulating layer preferably comprises a different material than the second organic insulating layer. The first organic insulating layer is preferably located on the second organic insulating layer. The second organic insulating layer preferably covers the ends of the first inorganic insulating layer. The ends of the second organic insulating layer are preferably exposed on the sides of the light-emitting device.

[0021] One aspect of the present invention is a flexible light-emitting device, comprising a light-emitting element, a transistor, a first inorganic insulating layer, a second inorganic insulating layer, a third inorganic insulating layer, and a first organic insulating layer. The transistor is located on the first inorganic insulating layer. The second inorganic insulating layer is located on the transistor. The first organic insulating layer is located on the second inorganic insulating layer. The light-emitting element is located on the first inorganic insulating layer, separated by the first organic insulating layer. The third inorganic insulating layer is located on the light-emitting element. The ends of the first, second, and third inorganic insulating layers are all located inside the end of the first organic insulating layer. The end of the first organic insulating layer is exposed on the side of the light-emitting device. Preferably, the first and second inorganic insulating layers are in contact with each other on the outer side of the transistor end. Preferably, the second and third inorganic insulating layers are in contact with each other on the outer side of the light-emitting element end. The first organic insulating layer preferably includes an opening on the outer side of the light-emitting element end. Preferably, the second and third inorganic insulating layers are in contact with each other within the opening. The light-emitting device preferably also includes a second organic insulating layer. The first organic insulating layer preferably comprises a different material than the second organic insulating layer. The first organic insulating layer is preferably located on the second organic insulating layer. The second organic insulating layer preferably covers the ends of the first inorganic insulating layer and the ends of the second inorganic insulating layer. The ends of the second organic insulating layer are preferably exposed on the side of the light-emitting device.

[0022] One aspect of the present invention is a module comprising a light-emitting device having any of the above-described structures, wherein the module is mounted with a connector such as a flexible printed circuit board (FPC) or a tape-on-cable (TCP), or with an integrated circuit (IC) mounted using a glass-on-chip (COG) or thin-film-on-chip (COF) method.

[0023] One aspect of the present invention is an electronic device comprising: the module described above; and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and operation buttons.

[0024] One aspect of the present invention is a method for manufacturing a plurality of light-emitting devices and dividing the plurality of light-emitting devices into individual light-emitting devices. A release layer is formed on a first substrate, a first inorganic insulating layer is formed on the release layer, a first opening is formed in the first inorganic insulating layer, a first organic insulating layer is formed on the first inorganic insulating layer, a light-emitting element is formed on the first organic insulating layer, a second inorganic insulating layer is formed on the light-emitting element, a second substrate is bonded to the second inorganic insulating layer, the first substrate and the first inorganic insulating layer are separated from each other, and a third substrate is bonded to the second substrate in such a way that it overlaps with the first inorganic insulating layer, thereby dividing the plurality of light-emitting devices into individual light-emitting devices such that the dividing portion includes the first opening. Preferably, the first organic insulating layer forms a second opening inside the first opening. Preferably, the second inorganic insulating layer is formed inside the second opening.

[0025] The release layer preferably includes a metal oxide layer and a resin layer on the metal oxide layer.

[0026] The release layer preferably comprises a resin layer.

[0027] The release layer preferably includes a metal layer and an oxide insulating layer on the metal layer. The metal layer preferably includes a third opening overlapping the first opening. The oxide insulating layer preferably includes a fourth opening overlapping both the first and third openings. For example, preferably, the first substrate and the first organic resin layer are in contact with each other at the portions where the first, third, and fourth openings overlap. Furthermore, when the release layer includes a metal layer and an oxide insulating layer on the metal layer, it is preferable to form a second organic insulating layer using a different material than the first organic insulating layer before forming the first organic insulating layer. In this case, the second organic insulating layer preferably contacts the first substrate through the first, third, and fourth openings.

[0028] The release layer preferably includes a first metal layer, an oxide insulating layer on the first metal layer, and a second metal layer on the oxide insulating layer. The first opening preferably overlaps with the second metal layer.

[0029] Invention Effects

[0030] One aspect of the present invention provides a light-emitting device capable of prolonged display in a bent state. One aspect of the present invention provides a light-emitting device capable of repeated bending with a small radius of curvature. One aspect of the present invention provides a highly reliable light-emitting device. One aspect of the present invention provides a light-emitting device that is not easily damaged. One aspect of the present invention enables the light-emitting device to be thinner or lighter. One aspect of the present invention provides an electronic device including a display section with flexibility or a curved surface.

[0031] One aspect of the present invention provides a method for manufacturing a light-emitting device with high yield. One aspect of the present invention provides a method for manufacturing a light-emitting device with high productivity. One aspect of the present invention provides a method for manufacturing a light-emitting device with low cost.

[0032] Note that the description of these effects does not preclude the existence of other effects. One aspect of the invention does not necessarily require all of the aforementioned effects. Effects other than those described above can be extracted from the specification, drawings, and claims.

[0033] Brief description of the attached figures

[0034] Figure 1A and Figure 1B This is a cross-sectional view showing an example of a light-emitting device.

[0035] Figures 2A to 2D This is a top view showing an example of a light-emitting device.

[0036] Figure 3A and Figure 3B This is a top view illustrating an example of a method for manufacturing a light-emitting device.

[0037] Figures 4A to 4E This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0038] Figure 5A and Figure 5B This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0039] Figures 6A to 6C This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0040] Figure 7A and Figure 7B This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0041] Figures 8A to 8D This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0042] Figure 9A and Figure 9B This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0043] Figures 10A to 10C This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0044] Figure 11A and Figure 11B This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0045] Figures 12A to 12D This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0046] Figure 13A and Figure 13B This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0047] Figures 14A to 14C This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0048] Figures 15A to 15D This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0049] Figure 16A and Figure 16B This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0050] Figure 17A and Figure 17B This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0051] Figures 18A to 18C This is a cross-sectional view illustrating an example of a method for manufacturing a light-emitting device.

[0052] Figure 19A This is a top view showing an example of a light-emitting device. Figure 19B This is a cross-sectional view showing an example of a light-emitting device.

[0053] Figure 20A and Figure 20B This is a cross-sectional view showing an example of a light-emitting device.

[0054] Figure 21A This is a top view showing an example of a light-emitting device. Figure 21B This is a cross-sectional view showing an example of a light-emitting device.

[0055] Figure 22 This is a cross-sectional view showing an example of a light-emitting device.

[0056] Figures 23A to 23D This is a diagram illustrating an example of an electronic device.

[0057] Figures 24A to 24F This is a diagram illustrating an example of an electronic device.

[0058] Figures 25A to 25C This is a diagram illustrating an example of an electronic device.

[0059] Methods of implementing the invention

[0060] The embodiments will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily understand that its methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as being limited only to the contents described in the embodiments shown below.

[0061] Note that in the invention structure described below, the same symbols are used in different figures to represent the same parts or parts with the same function, and repeated descriptions are omitted. Furthermore, when representing parts with the same function, the same shading lines are sometimes used without additional figure references.

[0062] Furthermore, for ease of understanding, the positions, sizes, and extents of the components shown in the accompanying drawings may not represent their actual positions, sizes, and extents. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, and extents disclosed in the accompanying drawings.

[0063] Furthermore, depending on the situation or state, the "film" and "layer" can be interchanged. For example, a "conductive layer" can be changed into a "conductive film." Additionally, for example, an "insulating film" can be changed into an "insulating layer."

[0064] (Implementation Method 1)

[0065] In this embodiment, refer to Figures 1 to 12. Figure 22 A light-emitting device and its manufacturing method according to one aspect of the present invention will be described.

[0066] Sometimes, it has been confirmed that cracks form or propagate when a flexible light-emitting device is kept in a bent state for an extended period or when it is repeatedly bent. The formation or propagation of these cracks can sometimes lead to poor light emission from the device. In many cases, the cracks originate in the inorganic film comprising the light-emitting device. For example, in the case of forming multiple light-emitting devices on a large substrate (more than one light-emitting device obtained from a single substrate), when these devices are divided into individual units, microcracks sometimes form in the inorganic film at the segmented portions. These cracks in the inorganic film propagate due to bending of the light-emitting device. Furthermore, further cracks easily form around the initial crack. Thus, once a crack forms in the inorganic film, it is easy for more cracks to accumulate and propagate within that film. Therefore, bending of the light-emitting device can easily lead to poor light emission.

[0067] In one aspect of the manufacturing method of a light-emitting device according to the present invention, multiple light-emitting devices are divided into individual light-emitting devices by dividing the region where the inorganic film extending to the light-emitting portion is not provided. Therefore, even if cracks are generated in the inorganic film during the shaping of the light-emitting device, the propagation of the cracks to the light-emitting portion can be suppressed. Furthermore, in another aspect of the manufacturing method of a light-emitting device according to the present invention, it is preferable to divide multiple light-emitting devices into individual light-emitting devices by dividing the region where the inorganic film is not provided. Therefore, the generation of cracks in the inorganic film can be suppressed during the shaping of the light-emitting device. Moreover, even if the light-emitting device is held in a bent state for a long time or repeatedly bent, the generation and propagation of cracks can be suppressed.

[0068] One embodiment of the present invention provides a flexible light-emitting device comprising a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is located on the first inorganic insulating layer, the light-emitting element is located on the first inorganic insulating layer across the first organic insulating layer, and the second inorganic insulating layer is located on the light-emitting element. The ends of both the first and second inorganic insulating layers are located inside the ends of the first organic insulating layer. The ends of the first organic insulating layer are exposed on the side of the light-emitting device.

[0069] In one aspect of the present invention, the light-emitting device is manufactured by dividing the area where the inorganic film extending to the light-emitting portion is not provided, so that the organic film is mainly exposed on the side of the light-emitting device. Here, since the water resistance of the organic film is lower than that of the inorganic film, water and other impurities can sometimes easily enter the interior of the light-emitting device from the side. Therefore, it is preferable that the first inorganic insulating layer and the second inorganic insulating layer are in contact with each other on the outer side of the end of the light-emitting element. For example, it is preferable that the first organic insulating layer includes an opening on the outer side of the end of the light-emitting element, in which the first inorganic insulating layer and the second inorganic insulating layer are in contact with each other. By surrounding the light-emitting element with two inorganic insulating layers, even if impurities enter from the side of the light-emitting device, the impurities are less likely to reach the light-emitting element. This improves the reliability of the light-emitting device.

[0070] One embodiment of the light-emitting device of the present invention can be used, for example, as a display device or a lighting device. The following description primarily uses a light-emitting device that can be used as a display device as an example.

[0071] [Cross-sectional structure of the light-emitting device]

[0072] Figure 1A and Figure 1B A cross-sectional view of the light-emitting device of this embodiment is shown.

[0073] Figure 1A The light-emitting device 10A shown includes a substrate 21, an adhesive layer 22, an inorganic insulating layer 31, a transistor 40, an inorganic insulating layer 33, an organic insulating layer 35, a light-emitting element 60, a partition wall 37, an inorganic insulating layer 64, an adhesive layer 24, and a substrate 23.

[0074] The light-emitting device 10A is flexible. Note that the light-emitting device of this embodiment is flexible. A flexible material is used as a component of this light-emitting device.

[0075] Transistor 40 is located on inorganic insulating layer 31. Inorganic insulating layer 33 is located on transistor 40. Organic insulating layer 35 is located on inorganic insulating layer 33. Light-emitting element 60 is located on inorganic insulating layer 31, separated by organic insulating layer 35. Alternatively, it can be said that light-emitting element 60 is located on inorganic insulating layer 33, separated by organic insulating layer 35.

[0076] As the light-emitting element 60, EL elements such as OLEDs (Organic Light Emitting Diodes) and QLEDs (Quantum-dot Light Emitting Diodes) are preferably used. The light-emitting material included in the EL element can be an organic or inorganic compound, and can include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, quantum dot materials, etc. Alternatively, LEDs such as micro-LEDs (Light Emitting Diodes) can also be used as the light-emitting element. In this embodiment, the example of using an EL element as the light-emitting element 60 will be described.

[0077] The light-emitting element 60 includes an electrode 61, an EL layer 62, and an electrode 63. The EL layer 62 is located between the electrode 61 and the electrode 63. The EL layer 62 contains at least a light-emitting material. The electrode 63 has the function of transmitting visible light. The electrode 61 preferably has the function of reflecting visible light.

[0078] The light-emitting element 60 has the function of emitting visible light. Specifically, the light-emitting element 60 is an electroluminescent element that emits light to one side of the substrate 23 by applying a voltage between the electrodes 61 and 63 (refer to light emission 20). That is, the light-emitting device 10A has a top-emitting structure.

[0079] One embodiment of the light-emitting device of the present invention can employ a top-emitting structure, a bottom-emitting structure, or a double-sided emitting structure. A conductive film that allows visible light to pass through is used as the electrode on the light-extracting side. Alternatively, a conductive film that reflects visible light is preferably used as the electrode on the side that does not extract light.

[0080] Electrode 61 is electrically connected to the source or drain of transistor 40 through openings provided in inorganic insulating layer 33 and organic insulating layer 35. Electrode 61 is used as a pixel electrode. The end of electrode 61 is covered by partition wall 37.

[0081] The separator 37 can be an inorganic or organic insulating layer. When using an organic insulating layer, it is preferable that the inorganic insulating layer 64 is provided in a manner that covers the side of the separator 37. When using an inorganic insulating layer, it is preferable that the separator 37 and the inorganic insulating layer 64 are in contact with each other at the outer end of the electrode 63.

[0082] Preferably, a protective layer is provided in a manner that covers the light-emitting element 60. By providing a protective layer, impurities such as water can be prevented from entering the light-emitting element 60, thereby improving the reliability of the light-emitting element 60.

[0083] The protective layer preferably comprises at least one inorganic film. An example of a protective layer comprising an inorganic insulating layer 64 is shown in the light-emitting device 10A. Alternatively, the protective layer may have a stacked structure of inorganic and organic films. Examples of such a stacked structure include a structure in which a silicon oxynitride film, a silicon oxide film, an organic film, a silicon oxide film, and a silicon nitride film are sequentially formed. By having a stacked structure of inorganic and organic films in the protective layer, impurities (typically hydrogen, water, etc.) that may enter the light-emitting element 60 can be appropriately suppressed.

[0084] The protective layer is bonded to the substrate 23 by the adhesive layer 24.

[0085] The end of the organic insulating layer 35 is exposed on the side of the light-emitting device 10A. The ends of the inorganic insulating layer 31, the inorganic insulating layer 33, and the inorganic insulating layer 64 are all located inside the end of the organic insulating layer 35.

[0086] The side surface of the light-emitting device 10A is the surface exposed during the manufacturing process of the light-emitting device 10A through the cutting of its shape. Since the inorganic insulating layer 31, inorganic insulating layer 33, and inorganic insulating layer 64 are not provided in the region 50 including the side surface of the light-emitting device 10A, the generation of cracks in these layers during cutting can be suppressed. Therefore, even if the light-emitting device 10A is held in a bent state for a long time or repeatedly bent, cracks are not easily generated inside the light-emitting device 10A, or even if cracks do occur, they are not easily propagated. This improves the bending resistance of the light-emitting device 10A.

[0087] Region 50, including the side surface of the light-emitting device 10A, includes a substrate 21, an adhesive layer 22, an organic insulating layer 35, an adhesive layer 24, and a substrate 23. These layers preferably all contain organic materials. On the other hand, since organic materials are less waterproof than inorganic materials, there is a concern that impurities such as water may enter the interior of the light-emitting device 10A from its side surface through region 50. Therefore, the inorganic insulating layers are preferably in contact with each other on the outer side of the end of the transistor 40 (at least the end of the semiconductor layer forming the channel) and on the inner side of region 50, and on the outer side of the end of the light-emitting element 60 and on the inner side of region 50 (refer to region 51). Even if impurities enter from the side surface of the light-emitting device 10A through region 50, region 51 can prevent impurities from reaching the light-emitting element 60 and the transistor 40. This improves the reliability of the light-emitting device 10A.

[0088] In region 51, inorganic insulating layer 31 and inorganic insulating layer 33 are in contact with each other. Furthermore, in region 51, inorganic insulating layer 33 and inorganic insulating layer 64 are in contact with each other through an opening provided in organic insulating layer 35.

[0089] Figure 1BThe light-emitting device 10B shown includes an organic insulating layer 39 in addition to the structure of the light-emitting device 10A. The organic insulating layer 39 covers the ends of the inorganic insulating layer 31 and the inorganic insulating layer 33, and the ends of the organic insulating layer 39 are exposed on the side of the light-emitting device 10B. The organic insulating layer 35 is located on the organic insulating layer 39.

[0090] exist Figure 1B In the middle, the region 50 including the side of the light-emitting device 10B includes a substrate 21, an adhesive layer 22, an organic insulating layer 39, an organic insulating layer 35, an adhesive layer 24, and a substrate 23.

[0091] The stacked structure of the inorganic insulating layer 31 to the substrate 23 is formed on the support substrate (not shown) with a release layer in between, and then separated from the support substrate, and then transferred to the substrate 21. Sometimes, the separation interface of the release layer structure region 50, as described later, differs from other regions. For example, when the organic insulating layer 35 separates from the release layer interface, the organic insulating layer 35 may be damaged due to processes (heating or laser irradiation) that reduce the adhesion of the interface. Since the organic insulating layer 35 functions as a planarization layer and a layer supporting the light-emitting element 60, damage to the organic insulating layer 35 may sometimes lead to a decrease in the reliability of the light-emitting device. Therefore, it is preferable to adopt a structure in which the organic insulating layer 39 is provided in region 50 and separated from the release layer at the interface of the organic insulating layer 39. The organic insulating layer 39 is preferably formed using a different material than the organic insulating layer 35. Specifically, to improve the peelability of region 50, the material of the organic insulating layer 39 is preferably selected. Preferably, peelability is improved by placing the organic insulating layer 39 at the separation interface compared to the case where the organic insulating layer 35 is located at the separation interface. As an example, it is preferred that the organic insulating layer 39 is made of polyimide resin and the organic insulating layer 35 is made of acrylic resin.

[0092] [Top view of the light-emitting device]

[0093] Figures 2A to 2D A top view of the light-emitting device according to this embodiment is shown. Each light-emitting device includes a light-emitting part 381, a circuit 382, ​​an external connection terminal 383, and a wiring part 384.

[0094] Figure 2A The light-emitting device EP1 shown includes a pair of regions (region 50a and region 50b) arranged in such a way that the light-emitting part 381 is sandwiched between them.

[0095] The light-emitting device EP1 can be bent, for example, in region 52. The light-emitting device EP1 can be bent in region 52 along a line passing through the three parts of region 50a, region 50b, and light-emitting part 381.

[0096] Figure 2BThe light-emitting device EP2 shown includes a region 50 arranged around the light-emitting part 381, the circuit 382, ​​the external connection terminal 383, and the wiring part 384.

[0097] The light-emitting device EP2 can be bent, for example, in regions 52A and 52B. In region 52A, the light-emitting device EP2 can be bent along a line that passes through two parts of region 50 and a total of three parts, including the light-emitting part 381. The two parts of region 50 contain the light-emitting part 381. Furthermore, the light-emitting device EP2 can be bent in region 52B along a line that passes through two parts of region 50 and a total of three parts, including the wiring part 384. The two parts of region 50 contain the wiring part 384.

[0098] Figure 2C The light-emitting device EP3 shown includes region 50a, region 50b and region 50c. Regions 50a and 50c are arranged such that the light-emitting part 381 and the wiring part 384 are sandwiched between them, and regions 50b and 50c are arranged such that the light-emitting part 381 and the wiring part 384 are sandwiched between them.

[0099] The light-emitting device EP3 can be bent in two regions 52, for example. The light-emitting device EP3 can be bent in each region 52 along a line passing through four parts: region 50a or region 50b, region 50c, wiring section 384, and light-emitting section 381.

[0100] Figure 2D The light-emitting device EP4 shown includes a pair of regions (regions 50a and 50b) arranged to sandwich the light-emitting part 381 and a pair of regions (regions 50c and 50d) arranged to sandwich the wiring part 384.

[0101] The light-emitting device EP4 can be bent, for example, in regions 52A and 52B. In region 52A, the light-emitting device EP4 can be bent along a line passing through regions 50a, 50b, and the light-emitting part 381. In region 52B, the light-emitting device EP4 can be bent along a line passing through regions 50c, 50d, and the wiring part 384.

[0102] Figures 2A to 2D Region 50 and regions 50a to 50d shown can respectively employ the light-emitting device 10A ( Figure 1A ) or light-emitting device 10B ( Figure 1B The same structure applies. That is, regions 50 and 50a to 50d can also be considered regions where the inorganic film extending from the light-emitting portion 381 and the wiring portion 384 is not provided. Therefore, by bending the light-emitting device in a manner that includes these regions, the generation and propagation of cracks can be suppressed. This improves the bending resistance of the light-emitting device.

[0103] Here, in Figure 3A and Figure 3B The method of dividing multiple light-emitting devices into individual light-emitting devices is explained.

[0104] Figure 3A and Figure 3B A top view of a large panel 55 comprising four light-emitting devices EP is shown. The large panel 55 is divided into individual light-emitting devices EP by cutting along a dividing line 66. Here, the dividing line 66 preferably passes through region 50. Region 50 is a region where no inorganic film extending to the light-emitting portion is provided. By having the dividing line 66 pass through region 50, cracks can be suppressed from forming in the light-emitting devices EP during cutting. Note that... Figure 3A The adjacent regions 50A shown can also be as follows Figure 3B The area 50B shown is connected as described. This reduces the number of break lines, thereby reducing the number of break-up processes. Furthermore, the area of ​​the break-up portion can be reduced, thereby increasing the area of ​​the light-emitting part.

[0105] [Manufacturing method of light-emitting device]

[0106] Next, a method for manufacturing a light-emitting device according to one aspect of the present invention will be described with reference to Figures 4 to 18.

[0107] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting light-emitting devices can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma-enhanced chemical vapor deposition (PECVD) and thermal CVD. Furthermore, metal-organic chemical vapor deposition (MOCVD) is one type of thermal CVD method.

[0108] In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the light-emitting device can be formed by methods such as spin coating, dip coating, spray coating, inkjet coating, dispenser coating, screen printing, offset printing, doctor knife coating, slot coating, roller coating, curtain coating, and doctor knife coating.

[0109] Furthermore, when processing the thin film constituting the light-emitting device, photolithography and other methods can be used. Besides the methods mentioned above, nanoimprinting, sandblasting, and lift-off methods can also be used to process the thin film. Additionally, island-shaped thin films can be directly formed using mask-forming methods such as metal masks.

[0110] Photolithography typically involves two methods. One method involves forming a resist mask on the thin film to be processed, processing the film through etching, and then removing the resist mask. The other method involves forming a photosensitive thin film, followed by exposure and development to process the film into the desired shape.

[0111] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365nm), g-line (wavelength 436nm), h-line (wavelength 405nm), or a mixture of these. Additionally, ultraviolet light, KrF lasers, or ArF lasers can also be used. Furthermore, immersion lithography can also be employed. Extreme ultraviolet (EUV) light or X-rays can also be used as the light for exposure. Electron beams can also be used instead of the light used for exposure. When using EUV light, X-rays, or electron beams, extremely fine processing can be performed, making them preferred. Furthermore, when exposure is performed by scanning with a beam such as an electron beam, a photomask is not required.

[0112] As a method for etching thin films, dry etching, wet etching, and sandblasting can be used.

[0113] <Example 1 of Manufacturing Method>

[0114] Example 1 of the manufacturing method of the light-emitting device will be described with reference to Figures 4 to 6.

[0115] First, an island-shaped metal oxide layer 12 is formed on a support substrate 11, an island-shaped resin layer 13 is formed on the metal oxide layer 12, and an inorganic insulating layer 31 is formed on the support substrate 11 and the resin layer 13. Figure 4A ).

[0116] Example 1 of the manufacturing method shows an example of separation at the interface between the metal oxide layer 12 and the resin layer 13. Typical methods for reducing the adhesion of this interface include heat treatment in an oxygen-containing atmosphere during the formation of the resin layer 13 and laser irradiation of the resin layer 13. In the manufacturing method of the light-emitting device of this embodiment, at least one of the heat treatment and the laser irradiation is preferably performed. Note that separation sometimes occurs in the embrittled resin layer 13.

[0117] When irradiating the entire surface of the resin layer 13 with a laser, a linear laser is preferred. Excimer lasers, solid-state lasers, etc., can be used as the laser. For example, a semiconductor-pumped solid-state laser (DPSS) can also be used. Since laser devices from production lines for low-temperature polycrystalline silicon (LTPS) can be used, these devices can be effectively utilized. For example, a linear laser device used in the crystallization process of LTPS can be used in the laser irradiation process of one aspect of the present invention by inverting the surface and back of the substrate and irradiating the substrate from directly above with the side supporting the substrate 11 as the surface. Furthermore, existing LTPS production lines can be applied to production lines for transistors using top-gate self-aligned structures of oxide semiconductors (OS). As described above, existing LTPS manufacturing equipment can be easily modified to be used for the separation process and OS transistor manufacturing process of one aspect of the present invention.

[0118] Furthermore, when heat treatment is performed in an oxygen-containing atmosphere during the formation of resin layer 13, the step of irradiating the entire surface of resin layer 13 with laser can be reduced. Laser devices used to irradiate linear laser beams are expensive and have high maintenance costs. In one aspect of the invention, since this laser device is not required, costs can be significantly reduced. Furthermore, it is readily applicable to large substrates.

[0119] Furthermore, when foreign matter such as dust adheres to the light-irradiated surface of the support substrate 11 while the resin layer 13 is irradiated with laser light through the support substrate 11, uneven light irradiation sometimes occurs, resulting in portions of the resin layer 13 with low peelability, thus reducing the yield of the separation process between the support substrate 11 and the resin layer 13. In one aspect of the present invention, the peelability of the resin layer 13 can be improved by performing a heat treatment. Even if foreign matter adheres to the support substrate 11, uneven heating of the resin layer 13 is less likely to occur, thus reducing the yield of the separation process between the support substrate 11 and the resin layer 13.

[0120] Sometimes, the adhesion between the metal oxide layer 12 and the inorganic insulating layer 31 is low due to material adhesion issues. When the adhesion between the metal oxide layer 12 and the inorganic insulating layer 31 is low, unintended film peeling can occur during the manufacturing process of the light-emitting device, leading to a decrease in yield. For example, when a titanium dioxide film is used as the metal oxide layer 12 and an inorganic insulating film such as a silicon oxide film or a silicon oxynitride film is used as the inorganic insulating layer 31, film peeling is sometimes observed. Therefore, it is preferable to provide the resin layer 13 in a manner that covers the top and side surfaces of the metal oxide layer 12. This reduces unintended film peeling by eliminating the area where the metal oxide layer 12 contacts the inorganic insulating layer 31. Furthermore, since the adhesion between the metal oxide layer 12 and the inorganic insulating layer 31 does not need to be considered, the range of materials that can be selected for the metal oxide layer 12 and the inorganic insulating layer 31 can be expanded.

[0121] Preferably, the metal oxide layer 12 and the resin layer 13 are arranged in an island shape, with the inorganic insulating layer 31 covering the ends of the island-shaped metal oxide layer 12 and the ends of the island-shaped resin layer 13. When the metal oxide layer 12 and the resin layer 13 are provided on the entire surface of the support substrate 11, the resin layer 13 may sometimes peel off unintentionally from the metal oxide layer 12. Therefore, it is preferable to provide a region on the support substrate 11 that contacts the inorganic insulating layer 31. This can suppress the unintentional peeling of the resin layer 13 from the metal oxide layer 12. Furthermore, by forming a separation starting point, the timing of separation can be suppressed, thereby allowing the metal oxide layer 12 and the resin layer 13 to separate at the desired timing.

[0122] The support substrate 11 has a degree of rigidity that allows for easy transport and is heat-resistant to the temperatures during the manufacturing process. Examples of materials that can be used for the support substrate 11 include glass, quartz, ceramic, sapphire, resin, semiconductor, metal, or alloy. Examples of glass include alkali-free glass, barium borosilicate glass, and aluminoborosilicate glass.

[0123] In manufacturing method example 1, a base layer is formed between the support substrate 11 and the resin layer 13. The base layer may also have a single-layer structure or a multilayer structure, and may use one or both of a metal layer and a metal oxide layer.

[0124] Specifically, as the substrate layer, a layer comprising one or more of titanium, molybdenum, aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, tin, hafnium, yttrium, zirconium, magnesium, lanthanum, cerium, neodymium, bismuth, and niobium can be used. The substrate layer may comprise metals, alloys, and compounds thereof (metal oxides, etc.). The substrate layer preferably comprises one or more of titanium, molybdenum, aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, and tin.

[0125] The metal oxide layer 12 can be made of various metal oxides. Examples of metal oxides include titanium dioxide (TiO₂).x ), molybdenum oxide, aluminum oxide, tungsten oxide, indium tin oxide (ITSO) containing silicon, indium zinc oxide and In-Ga-Zn oxide, etc.

[0126] In addition, examples of metal oxides include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, zinc oxide (ZnO), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, tin oxide, bismuth oxide, titanates, tantalates, and niobates.

[0127] A metal oxide layer 12 can be formed by introducing oxygen into the metal layer after its formation. In this case, only the surface of the metal layer is oxidized, or the entire metal layer is oxidized. In the former case, a stacked structure of the metal layer and the metal oxide layer is formed by introducing oxygen into the metal layer.

[0128] For example, the metal layer can be oxidized by heating it in an oxygen-containing atmosphere. Preferably, the metal layer is heated while supplying an oxygen-containing gas. The heating temperature of the metal layer is preferably 100°C or higher and 500°C or lower, more preferably 100°C or higher and 450°C or lower, even more preferably 100°C or higher and 400°C or lower, and even more preferably 100°C or higher and 350°C or lower.

[0129] It is preferable to heat the metal layer at a temperature below the highest temperature during transistor manufacturing. This prevents the highest temperature during the manufacturing of the light-emitting device from becoming too high. By heating at a temperature below the highest temperature during transistor manufacturing, for example, the manufacturing equipment used in the transistor manufacturing process can be used in the manufacturing method of the display device of this embodiment, thus reducing additional equipment investment. Therefore, the production cost of the light-emitting device can be reduced. For example, when the transistor manufacturing temperature is as high as 350°C, the heat treatment temperature is preferably below 350°C.

[0130] Alternatively, the metal layer can be oxidized by subjecting its surface to free radical treatment. In this free radical treatment, it is preferable to expose the surface of the metal layer to an atmosphere containing at least one of oxygen free radicals and hydroxyl free radicals. For example, plasma treatment is preferably performed in an atmosphere containing one or both of oxygen and water vapor (H2O).

[0131] By including hydrogen, oxygen, and hydrogen free radicals (H) on or inside the surface of the metal oxide layer 12. ＊ ), oxygen free radicals (O ＊ ) or hydroxyl radical (OH) ＊Radical treatment or plasma treatment can reduce the force required to separate the metal oxide layer 12 from the resin layer 13. Therefore, it is preferable to perform free radical treatment or plasma treatment during the formation of the metal oxide layer 12.

[0132] When the metal layer is oxidized by free radical treatment or plasma treatment, there is no need to perform a process of heating the metal layer at high temperatures. Therefore, it is possible to prevent the maximum temperature in the manufacturing of the light-emitting device from becoming too high.

[0133] Alternatively, the metal oxide layer 12 can be formed in an oxygen atmosphere. For example, the metal oxide layer 12 can be formed by sputtering while supplying an oxygen-containing gas. In this case, it is preferable to subject the surface of the metal oxide layer 12 to a free radical treatment. In the free radical treatment, it is preferable to expose the surface of the metal oxide layer 12 to an atmosphere containing at least one of oxygen free radicals, hydrogen free radicals, and hydroxyl free radicals. For example, it is preferable to perform plasma treatment in an atmosphere containing one or more of oxygen, hydrogen, and water vapor (H2O).

[0134] Free radical treatment can be performed using plasma generation devices or ozone generation devices.

[0135] For example, oxygen plasma treatment, hydrogen plasma treatment, water plasma treatment, or ozone treatment can be performed. Oxygen plasma treatment can be performed by generating plasma in an atmosphere containing oxygen. Hydrogen plasma treatment can be performed by generating plasma in an atmosphere containing hydrogen. Water plasma treatment can be performed by generating plasma in an atmosphere containing water vapor (H2O). In particular, water plasma treatment is preferred because it allows the surface or interior of the metal oxide layer 12 to contain a large amount of moisture.

[0136] Furthermore, plasma treatment can be performed in an atmosphere containing two or more of the following: oxygen, hydrogen, water (water vapor), and an inert gas (typically argon). Examples of such plasma treatments include plasma treatment in an atmosphere containing oxygen and hydrogen, an atmosphere containing oxygen and water, an atmosphere containing water and argon, an atmosphere containing oxygen and argon, or an atmosphere containing oxygen, water, and argon. Using argon gas as the plasma treatment gas allows plasma treatment to be performed while simultaneously damaging the metal layer or metal oxide layer 12, which is therefore preferred.

[0137] Furthermore, two or more plasma treatments can be performed consecutively without exposure to the atmosphere. For example, water plasma treatment can be performed after argon plasma treatment.

[0138] In addition, methods for introducing oxygen, hydrogen, water, etc., include ion implantation, ion doping, and plasma immersion ion implantation.

[0139] The thickness of the metal layer is preferably 1 nm or more and 100 nm or less, more preferably 1 nm or more and 50 nm or less, and even more preferably 1 nm or more and 20 nm or less.

[0140] The thickness of the metal oxide layer 12 is preferably 1 nm or more and 200 nm or less, more preferably 5 nm or more and 100 nm or less, and even more preferably 5 nm or more and 50 nm or less. When the metal oxide layer 12 is formed using a metal layer, the thickness of the finally formed metal oxide layer 12 is sometimes thicker than the thickness of the metal layer immediately after film formation.

[0141] The metal oxide layer 12 preferably comprises titanium oxide or tungsten oxide. Using titanium oxide reduces costs compared to using tungsten oxide, making it a preferred option.

[0142] The resin layer 13 can be formed using various resin materials (including resin precursors). The resin layer 13 is preferably formed using a material with thermosetting properties.

[0143] The resin layer 13 can be formed using a photosensitive material or a non-photosensitive material (also known as a non-photosensitive material). When forming the resin layer 13 using a photosensitive material, a photolithography method can be used to form the resin layer 13 with the desired shape. For example, the resin layer 13 can have an opening or an uneven shape.

[0144] The resin layer 13 is preferably formed using a material comprising polyimide resin, a polyimide resin precursor, or an acrylic resin. For example, the resin layer 13 can be formed using a material comprising polyimide resin and a solvent, a material comprising polyamic acid and a solvent, or a material comprising acrylic resin and a solvent. Materials comprising polyimide resin or a polyimide resin precursor have high heat resistance and are therefore preferred. Materials comprising acrylic resin have high transmittance to visible light and are therefore preferred. Since polyimide resin and acrylic resin are respectively materials suitable for planarization films, etc., in light-emitting devices, previously used film-forming devices and materials can be used. Therefore, it is not necessary to add new devices or materials to achieve the structure of one aspect of the present invention. As described above, since the resin layer 13 can use resin materials used in light-emitting devices without the need for special materials, costs can be controlled.

[0145] Furthermore, as resin materials that can be used for resin layer 13, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins can be used, for example.

[0146] Next, resin layer 13 can be formed by heating the film after it has been formed into a film that will become resin layer 13.

[0147] For example, heating treatment can be performed while supplying the interior of the heating device's processing chamber with one or more gases, including oxygen, nitrogen, and rare gases (such as argon). Alternatively, heating treatment can be performed in an atmospheric atmosphere using the heating device's processing chamber, heating plate, etc.

[0148] Preferably, heating is performed while nitrogen gas is introduced. This results in less oxygen in the heated atmosphere than in the atmospheric atmosphere, thereby suppressing the oxidation of the resin layer 13 and improving the transmittance of the resin layer 13 to visible light.

[0149] Furthermore, heating is preferably performed in an atmospheric atmosphere. Additionally, heating is preferably performed while supplying an oxygen-containing gas. The higher the oxygen content in the resin layer 13, the less force is required to separate the metal oxide layer 12 from the resin layer 13. A higher oxygen content in the heating atmosphere allows the resin layer 13 to contain more oxygen, thereby making it easier to separate the resin layer 13 from the metal oxide layer 12.

[0150] For example, in a later process, when the entire surface of the resin layer 13 is irradiated with a laser, it is preferable to heat it while supplying nitrogen gas. Furthermore, when not irradiated with a laser, it is preferable to heat it in an oxygen-containing atmosphere.

[0151] By performing heat treatment, the degassed components (e.g., hydrogen, water, etc.) in the resin layer 13 can be reduced. In particular, it is preferable to perform the heating at a temperature above the formation temperature of each layer formed on the resin layer 13. As a result, degassing from the resin layer 13 during the transistor manufacturing process can be significantly reduced.

[0152] For example, when the transistor manufacturing temperature is as high as 350°C, the film that will become the resin layer 13 is heated at a temperature of 350°C or higher but 450°C or lower, more preferably 400°C or lower, and even more preferably 375°C or lower. This significantly reduces degassing from the resin layer 13 during the transistor manufacturing process.

[0153] The heat treatment temperature is preferably below the highest temperature used in transistor manufacturing. By heating at a temperature below the highest temperature used in transistor manufacturing, for example, the manufacturing equipment used in the transistor manufacturing process can be used in the manufacturing method of the display device of this embodiment, thus reducing additional equipment investment. Therefore, the production cost of the light-emitting device can be reduced. For example, when the transistor manufacturing temperature is as high as 350°C, the heat treatment temperature is preferably below 350°C.

[0154] By making the maximum temperature during transistor manufacturing equal to the temperature of the heat treatment, it is possible to prevent the maximum temperature during light-emitting device manufacturing from increasing due to the heat treatment and to reduce the degassing components of the resin layer 13, which is therefore preferred.

[0155] By extending the processing time, the same peelability can sometimes be achieved even at lower heating temperatures as under conditions with higher heating temperatures. Therefore, when the heating temperature cannot be increased due to the structure of the heating device, it is preferable to extend the processing time.

[0156] The heat treatment time is preferably 5 minutes or more and 24 hours or less, more preferably 30 minutes or more and 12 hours or less, and even more preferably 1 hour or more and 6 hours or less. Note that the heat treatment time is not limited to these. For example, when using RTA (Rapid Thermal Annealing) for heat treatment, it can be less than 5 minutes.

[0157] As heating devices, various devices can be used, such as electric furnaces or devices that utilize heat conduction or thermal radiation from heating elements like resistance heating elements to heat the workpiece. For example, RTA devices such as GRTA (Gas Rapid Thermal Anneal) devices and LRTA (Lamp Rapid Thermal Anneal) devices can be used. LRTA devices heat the workpiece using radiation of light (electromagnetic waves) emitted from lamps such as halogen lamps, metal halide lamps, xenon arc lamps, carbon arc lamps, high-pressure sodium lamps, or high-pressure mercury lamps. GRTA devices use high-temperature gas for heating. Because using RTA devices can shorten processing time, it is preferred from a mass production perspective. Furthermore, tandem heating devices can also be used for heating.

[0158] Prior to heat treatment, a heat treatment (also known as pre-baking) may be performed to remove solvents contained in the film that will become resin layer 13. The temperature of the pre-baking treatment can be appropriately determined depending on the material used. For example, pre-baking can be performed at 50°C or higher and 180°C or lower, 80°C or higher and 150°C or lower, or 90°C or higher and 120°C or lower. Alternatively, heat treatment can also serve as pre-baking, and the aforementioned solvents can be removed by performing heat treatment.

[0159] The resin layer 13 is flexible. The support substrate 11 is less flexible than the resin layer 13.

[0160] The thickness of the resin layer 13 is preferably 0.01 μm or more and less than 10 μm, more preferably 0.1 μm or more and less than 5 μm, and even more preferably 0.5 μm or more and less than 3 μm. By forming a thin resin layer, the light-emitting device can be manufactured at low cost. Furthermore, the light-emitting device can be made lighter and thinner. In addition, the flexibility of the light-emitting device can be improved. By using a low-viscosity solution, the resin layer 13 can be easily formed thin. Note that this is not a limitation; the thickness of the resin layer 13 can also be 10 μm or more. For example, the thickness of the resin layer 13 can also be 10 μm or more and less than 200 μm. Setting the thickness of the resin layer 13 to 10 μm or more improves the rigidity of the light-emitting device, and is therefore preferred.

[0161] The coefficient of thermal expansion of the resin layer 13 is preferably 0.1 ppm / ℃ or higher and 50 ppm / ℃ or lower, more preferably 0.1 ppm / ℃ or higher and 20 ppm / ℃ or lower, and even more preferably 0.1 ppm / ℃ or higher and 10 ppm / ℃ or lower. The lower the coefficient of thermal expansion of the resin layer 13, the better it can suppress the generation of cracks or damage to transistors or the like in the layers constituting transistors due to heating.

[0162] The inorganic insulating layer 31 preferably has the following function: blocking hydrogen, oxygen and water released from the metal oxide layer 12 and resin layer 13 during subsequent heating processes.

[0163] The inorganic insulating layer 31 is formed at a temperature below the heat resistance temperature of the resin layer 13. Preferably, the inorganic insulating layer 31 is formed at a temperature lower than the heat treatment temperature.

[0164] As the inorganic insulating layer 31, inorganic insulating films such as silicon nitride film, silicon oxynitride film, silicon oxide film, silicon oxynitride film, aluminum oxide film, and aluminum nitride film can be used. Additionally, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film can be used. Furthermore, two or more of the above-mentioned insulating films can be stacked. In particular, it is preferable to form a silicon nitride film on the resin layer 13 and a silicon oxide film on the silicon nitride film.

[0165] Note that in this specification, "silicon oxynitride" refers to a substance in which the oxygen content is greater than the nitrogen content. Additionally, in this specification, "silicon oxynitride" refers to a substance in which the nitrogen content is greater than the oxygen content.

[0166] Since the inorganic insulating layer 31 becomes a dense and highly barrier film with a higher film-forming temperature, it is preferred to form it at a high temperature.

[0167] The substrate temperature during the formation of the inorganic insulating layer 31 is preferably above room temperature (25°C) and below 350°C, more preferably above 100°C and below 300°C.

[0168] Next, an opening is formed at the position where the inorganic insulating layer 31 overlaps with the metal oxide layer 12 and the resin layer 13. Figure 4B The process of forming an opening in the inorganic insulating layer 31 can be performed before the formation of the organic insulating layer 35, and can be performed at any time before, during, or after the manufacture of the transistor 80.

[0169] Next, transistor 80 is formed on inorganic insulating layer 31. Figure 4C ).

[0170] There are no particular restrictions on the structure of the transistors included in the light-emitting device. For example, planar transistors, interleaved transistors, or anti-interleaved transistors can be used. In addition, top-gate or bottom-gate transistors can also be used. Alternatively, gate electrodes can be provided at the top and bottom of the channel.

[0171] There are no particular restrictions on the crystallinity of the semiconductor material used in transistors; amorphous semiconductors or crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in some of their components) can be used. Crystalline semiconductors are preferred because they can suppress transistor performance degradation.

[0172] The semiconductor layer of a transistor preferably comprises a metal oxide (also known as an oxide semiconductor). Alternatively, the semiconductor layer of a transistor may also comprise silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polycrystalline silicon, monocrystalline silicon, etc.).

[0173] In this embodiment, the semiconductor of the transistor is an oxide semiconductor. Using a semiconductor material with a wider bandgap and lower carrier density than silicon reduces the off-state current of the transistor, which is therefore preferred.

[0174] Here, we show a case where a transistor 80 is fabricated, comprising a metal oxide layer 83 and two gates.

[0175] The transistor 80 is formed at a temperature below the heat resistance temperature of the resin layer 13. Preferably, the transistor 80 is formed at a temperature below the heat treatment temperature at which the resin layer 13 is formed.

[0176] Specifically, firstly, a conductive layer 81, which serves as a gate electrode, is formed on the inorganic insulating layer 31. The conductive layer 81 can be formed by forming a resist mask after the conductive film is formed, etching the conductive film, and then removing the resist mask.

[0177] The conductive layer included in the light-emitting device can be a single-layer or multi-layer structure made of metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys with these metals as the main component. Alternatively, it can be a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon. Additionally, semiconductors such as polycrystalline silicon or oxide semiconductors, or silicides such as nickel silicides, can be used to reduce resistance by including impurity elements. Furthermore, a graphene-containing film can be used. For example, a graphene-containing film can be formed by reducing a graphene oxide film. Alternatively, a semiconductor such as an oxide semiconductor containing impurity elements can be used. Alternatively, it can be formed using conductive pastes such as silver, carbon, or copper, or conductive polymers such as polythiophene. Conductive pastes are inexpensive and therefore preferred. Conductive polymers are easy to apply and therefore preferred.

[0178] Next, an insulating layer 32 is formed to serve as a gate insulating layer. An inorganic insulating film that can be used as an inorganic insulating layer 31 can be applied as the insulating layer 32.

[0179] Next, a metal oxide layer 83 is formed, which serves as an oxide semiconductor layer. The metal oxide layer 83 can be formed by forming a resist mask after the metal oxide film is formed, etching the metal oxide film, and then removing the resist mask.

[0180] The metal oxide film preferably comprises, for example, indium, M (M being one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0181] In particular, as a metal oxide film, an oxide containing indium (In), gallium (Ga) and zinc (Zn) (also known as IGZO) is preferred.

[0182] When the metal oxide film is an In-M-Zn oxide, the atomic ratio of the metal elements used as the sputtering target to form the In-M-Zn oxide can be exemplified as follows: In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 1:3:2, In:M:Zn = 1:3:4, In:M:Zn = 1:3:6, In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1:8, In:M:Zn = 6:1:6, In:M:Zn = 5:2:5, etc.

[0183] As the sputtering target, a target containing polycrystalline oxide is preferred, thereby facilitating the formation of a crystalline semiconductor layer. Note that the atomic ratio of the formed semiconductor layer includes variations within ±40% of the atomic ratio of the metal elements in the sputtering target. For example, when the composition of the sputtering target used for the semiconductor layer is In:Ga:Zn = 4:2:4.1 [atomic ratio], the composition of the formed semiconductor layer is sometimes In:Ga:Zn = 4:2:3 [atomic ratio] or close to it.

[0184] When the atomic number ratio is recorded as In:Ga:Zn = 4:2:3 or similar, it includes the following cases: when the atomic number ratio of In is 4, the atomic number ratio of Ga is 1 or more and 3 or less, and the atomic number ratio of Zn is 2 or more and 4 or less. Furthermore, when the atomic number ratio is recorded as In:Ga:Zn = 5:1:6 or similar, it includes the following cases: when the atomic number ratio of In is 5, the atomic number ratio of Ga is greater than 0.1 and less than 2, and the atomic number ratio of Zn is 5 or more and less than 7. Furthermore, when the atomic number ratio is recorded as In:Ga:Zn = 1:1:1 or similar, it includes the following cases: when the atomic number ratio of In is 1, the atomic number ratio of Ga is greater than 0.1 and less than 2, and the atomic number ratio of Zn is greater than 0.1 and less than 2.

[0185] In metal oxide films, the field-effect mobility of transistors is improved when the atomic ratio of In is higher than that of M (e.g., Ga), which is therefore preferred. Furthermore, in metal oxide films, oxygen vacancies are less likely to form when the atomic ratio of M (e.g., Ga) is higher than that of In, which is also preferred.

[0186] The metal oxide layer 83 may also be stacked to include multiple metal oxide films.

[0187] The substrate temperature during the formation of the metal oxide film is preferably below 350°C, more preferably above room temperature and below 200°C, and even more preferably above room temperature and below 130°C.

[0188] The metal oxide film can be formed using any one or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film. However, in the case of obtaining a transistor with high field-effect mobility, the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0189] The bandgap of the metal oxide film is preferably 2 eV or more, more preferably 2.5 eV or more, and even more preferably 3 eV or more. Thus, by using a metal oxide film with a wide bandgap, the off-state current of the transistor can be reduced.

[0190] Metal oxide films can be formed by sputtering. In addition, PLD, PECVD, thermal CVD, ALD, and vacuum evaporation methods can also be used.

[0191] Next, an insulating layer 34, which serves as a gate insulating layer, is formed on the metal oxide layer 83. The insulating layer 34 may utilize an inorganic insulating film that can be used for the inorganic insulating layer 31.

[0192] Next, a conductive layer 85, which serves as a gate electrode, is formed on the insulating layer 34. The conductive layer 85 can be formed by forming a resist mask after the conductive film is formed, etching the conductive film, and then removing the resist mask.

[0193] Next, using the conductive layer 85 as a mask, impurity elements are supplied to the metal oxide layer 83 to form a low-resistance region 83n. The region in the metal oxide layer 83 that overlaps with the conductive layer 85 (the channel formation region 83i) is not supplied with impurity elements.

[0194] Impurity elements can be supplied using plasma ion doping or ion implantation. These methods allow for high-precision control of the concentration distribution along the depth direction based on factors such as ion acceleration voltage and dosage. Plasma ion doping improves productivity. Furthermore, ion implantation utilizing mass separation can enhance the purity of the supplied impurity elements.

[0195] Examples of impurity elements include hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, arsenic, aluminum, magnesium, silicon, and rare gases. Boron, phosphorus, aluminum, magnesium, or silicon are preferred as impurity elements, with boron or phosphorus being more preferred.

[0196] As the source gas for impurity elements, gases containing the aforementioned impurity elements can be used. When supplying boron, B₂H₆ gas or BF₃ gas, etc., are typically used. Furthermore, when supplying phosphorus, PH₃ gas, etc., are typically used. Alternatively, a mixture of these source gases diluted with rare gases can also be used.

[0197] In addition to the above, source gases can include CH4, N2, NH3, AlH3, AlCl3, SiH4, Si2H6, F2, HF, H2, (C5H5)2Mg, and rare gases. Furthermore, the ion source is not limited to gases; gases that have been vaporized by heating solids or liquids can also be used.

[0198] Note that there are no restrictions on the method of supplying the impurity element; for example, plasma treatment or treatment using thermal diffusion caused by heating can also be performed. In the case of plasma treatment, the impurity element can be supplied by first generating plasma in a gas atmosphere containing the supplied impurity element, and then performing plasma treatment. As the apparatus for generating the plasma, dry etching apparatus, ashing apparatus, plasma CVD apparatus, or high-density plasma CVD apparatus can be used, etc.

[0199] In one embodiment of the invention, impurity elements can be supplied to the metal oxide layer 83 via the insulating layer 34. This suppresses the decrease in crystallinity of the metal oxide layer 83 when impurity elements are supplied. Therefore, it is particularly suitable for situations where decreased crystallinity leads to increased resistance.

[0200] Next, an inorganic insulating layer 36 is formed, covering the metal oxide layer 83, the insulating layer 34, and the conductive layer 85. The inorganic insulating layer 36 can be formed by the same method as the inorganic insulating layer 31.

[0201] Next, an opening is formed in the insulating layer 34 and the inorganic insulating layer 36 to reach the low-resistance region 83n of the metal oxide layer 83.

[0202] Next, conductive layers 87a and 87b are formed. Conductive layers 87a and 87b can be formed by forming a resist mask after the conductive film is formed, etching the conductive film, and then removing the resist mask. Conductive layers 87a and 87b are electrically connected to the low-resistance region 83n of the metal oxide layer 83 through openings provided in the insulating layer 34 and the inorganic insulating layer 36, respectively.

[0203] Through the above steps, transistor 80 can be manufactured. Figure 4C ).

[0204] Note that openings leading to the resin layer 13 are formed in insulating layers 32, 34, and 36. Figure 4CThe opening can be formed before the organic insulating layer 35 is formed, or it can be formed during or after the fabrication of the transistor 80. Note that the opening can be formed either all at once across multiple layers or in each layer.

[0205] Next, an organic insulating layer 35 is formed on the inorganic insulating layer 36 and on the transistor 80. Figure 4D The organic insulating layer 35 is preferably used as a planarization layer because it includes the surface on which the light-emitting element will be formed later.

[0206] Materials that can be used for the organic insulating layer 35 include, for example, acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimide amide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0207] The organic insulating layer 35 is disposed in such a way that it is embedded in openings provided in the inorganic insulating layers 31, 32, 34 and 36, and contacts the resin layer 13 through these openings. The organic insulating layer 35 is formed such that it includes an opening inside the opening that reaches the inorganic insulating layer 36. Furthermore, the organic insulating layer 35 is formed such that it includes an opening that reaches the conductive layer 87a.

[0208] Next, electrode 61 is formed. Figure 4E A portion of electrode 61 is used as a pixel electrode for light-emitting element 60. Electrode 61 can be formed by forming a resist mask after forming a conductive film, and removing the resist mask after etching the conductive film. Electrode 61 is electrically connected to conductive layer 87a through an opening provided in organic insulating layer 35.

[0209] Next, a partition wall 37 is formed covering the end of the electrode 61. The partition wall 37 can also be made of inorganic or organic materials. For example, an inorganic insulating film suitable for use in the inorganic insulating layer 31 can be used. Alternatively, a material suitable for use in the organic insulating layer 35 can be used.

[0210] Next, EL layer 62 and electrode 63 are formed. Figure 4E A portion of electrode 63 is used as the common electrode of light-emitting element 60.

[0211] The EL layer 62 includes at least a light-emitting layer. In addition to the light-emitting layer, the EL layer 62 may also include layers containing materials with high hole injection capacity, materials with high hole transport capacity, hole blocking materials, materials with high electron transport capacity, materials with high electron injection capacity, or bipolar materials (materials with high electron and hole transport capacity).

[0212] Low-molecular-weight compounds or high-molecular-weight compounds can be used as EL layer 62, and inorganic compounds may also be included.

[0213] The EL layer 62 can be formed using methods such as vapor deposition, coating, printing, and jetting. When forming the EL layer 62 for each pixel separately, vapor deposition using a shadow mask such as a metal mask or inkjet printing can be used. When the EL layer 62 is not formed for each pixel separately, vapor deposition without a metal mask can be used.

[0214] Electrode 63 can be formed using methods such as vapor deposition or sputtering.

[0215] Electrode 63 is formed at a temperature below the heat resistance temperature of resin layer 13 and below the heat resistance temperature of EL layer 62.

[0216] Through the above steps, a light-emitting element 60 can be formed. Figure 4E ).

[0217] Next, an inorganic insulating layer 64 is formed covering the electrode 63. Figure 4E The light-emitting element 60 is sealed by an inorganic insulating layer 64. Preferably, the inorganic insulating layer 64 is formed after the electrode 63 is formed, in a manner that prevents exposure to the atmosphere.

[0218] The inorganic insulating layer 64 is used as a protective layer to suppress the diffusion of impurities such as water into the light-emitting element 60. The protective layer can have a single-layer structure or a multilayer structure. For example, the protective layer can have a structure with an inorganic insulating layer 64, a structure with two or more layers including an inorganic insulating layer 64, or a structure with two or more layers including an inorganic insulating layer 64 and an organic insulating film.

[0219] The inorganic insulating layer 64 is connected to the inorganic insulating layer 36 through an opening provided in the organic insulating layer 35. Thus, the top, side, and bottom surfaces of the transistor 80 (metal oxide layer 83) and the light-emitting element 60 are surrounded by multiple inorganic insulating layers (inorganic insulating layer 31, inorganic insulating layer 36, and inorganic insulating layer 64, etc.). Therefore, impurities entering the transistor 80 and the light-emitting element 60 can be suppressed, thereby improving the reliability of the transistor 80 and the light-emitting element 60.

[0220] The inorganic insulating layer 64 may utilize an inorganic insulating film that can be used in the inorganic insulating layer 31.

[0221] The inorganic insulating layer 64 can be formed using methods such as PECVD, ALD, and sputtering.

[0222] Next, the inorganic insulating layer 64 is bonded to the substrate 23 using the adhesive layer 24. Figure 4E ).

[0223] As the adhesive layer 24, various curing adhesives such as UV-curing adhesives, reactive curing adhesives, thermosetting adhesives, and anaerobic adhesives can be used. Alternatively, adhesive sheets can also be used.

[0224] Since the substrate 23 is located on the side that extracts light from the light-emitting element 60, it is preferable to use a material with high transmittance to visible light. A thin film is preferred as the substrate 23, and a resin thin film is particularly preferred. This allows for a lighter and thinner light-emitting device. Furthermore, light-emitting devices using thin-film substrates are less prone to breakage compared to those using glass or metal. Additionally, the flexibility of the light-emitting device can be improved.

[0225] As substrate 23, materials such as polyester resins (e.g., polyethylene terephthalate (PET) or polyethylene naphthalate (PEN)), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyethersulfone (PES) resins, polyamide resins (nylon, aromatic polyamides, etc.), polysiloxane resins, cycloolefin resins, polystyrene resins, polyamide-imide resins, polyurethane resins, polyvinyl chloride resins, polyvinylidene chloride resins, polypropylene resins, polytetrafluoroethylene (PTFE) resins, ABS resins, and cellulose nanofibers can also be used. Glass, whose thickness allows for flexibility, can also be used as substrate 23.

[0226] When a circular polarizer is superimposed on a display device, it is preferable to use a substrate with high optical isotropy as the substrate included in the display device. A substrate with high optical isotropy has lower birefringence (or, in other words, less birefringence).

[0227] The absolute value of the retardation value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0228] Examples of films with high optical isotropy include cellulose triacetate (TAC) films, cyclic olefin polymer (COP) films, cyclic olefin copolymer (COC) films, and acrylic resin films.

[0229] When a thin film is used as a substrate, shape changes such as wrinkles may occur in the display device due to water absorption by the film. Therefore, it is preferable to use a thin film with low absorptivity as the substrate. For example, it is preferable to use a thin film with an absorptivity of 1% or less, more preferably a thin film with an absorptivity of 0.1% or less, and even more preferably a thin film with an absorptivity of 0.01% or less.

[0230] Circular polarizers can also be used as substrates for display devices.

[0231] Next, the separation point is formed. Figure 5AAn example is shown where a sharp-shaped tool 65, such as a knife, is inserted into the inner side of the end of the resin layer 13 from the side of the substrate 23 to form a cut. The cut is preferably formed in a frame shape.

[0232] Alternatively, a separation starting point can be formed by irradiating a portion or the entire resin layer 13 with a laser from one side of the support substrate 11.

[0233] Next, the metal oxide layer 12 is separated from the resin layer 13 at the separation starting point. Figure 5B ).

[0234] For example, the support substrate 11 can be separated from the resin layer 13 by applying a pulling force to the resin layer 13 in the vertical direction. Specifically, the resin layer 13 can be peeled off from the support substrate 11 by stretching a portion of the top surface of the adsorption substrate 23 upward.

[0235] Here, during separation, adding a water-containing liquid such as water or an aqueous solution to the separation interface allows the liquid to permeate into the interface, making separation easier. Furthermore, it helps suppress the adverse effects of static electricity generated during separation on functional components such as transistors (damage to semiconductor components due to static electricity, etc.).

[0236] Examples of the supplied liquids include water (preferably pure water), neutral, alkaline, or acidic aqueous solutions, and aqueous solutions containing dissolved salts. Ethanol or acetone may also be used. Furthermore, various organic solvents can be employed.

[0237] Then, the substrate 21 is bonded to the exposed resin layer 13 using the adhesive layer 22. Figure 6A Therefore, transistors 80 and light-emitting elements 60 formed on the support substrate 11 can be transferred from the support substrate 11 to the substrate 23.

[0238] Note that the resin layer 13 can also be removed to expose the oxide insulating layer 15, and then the oxide insulating layer 15 can be bonded to the substrate 21. The resin layer 13 can be removed by ashing or the like. By removing the resin layer 13, the light-emitting device can be made thinner and lighter.

[0239] The adhesive layer 22 may use materials that can be used in the adhesive layer 24.

[0240] As substrate 21, materials suitable for substrate 23 can be used. Furthermore, various materials such as glass, quartz, resin, metal, alloy, or semiconductor can be used as substrate 21, the thickness of which allows it to be flexible.

[0241] By processing the shape of the light-emitting device, a light-emitting device can be manufactured. Figure 6B and Figure 6C ).like Figure 6BAs shown, the break line 66 is broken in such a way that it overlaps with the openings provided in the inorganic insulating layers 31, 32, 34, and 36. That is, no inorganic film is provided at the break point. Therefore, the generation of microcracks inside the light-emitting device due to the break can be suppressed. Furthermore, even if the light-emitting device is held in a bent state for a long time or repeatedly bent, the generation and propagation of cracks can be suppressed.

[0242] Although Figure 6C The sides of the light-emitting device shown primarily expose the organic film, but the top, sides, and bottom surfaces of the transistor 80 (metal oxide layer 83) and the light-emitting element 60 are surrounded by multiple inorganic insulating layers (inorganic insulating layer 31, inorganic insulating layer 36, and inorganic insulating layer 64, etc.). Therefore, impurities can be suppressed from entering the transistor 80 and the light-emitting element 60, thereby improving the reliability of the transistor 80 and the light-emitting element 60.

[0243] <Example of Variation 1>

[0244] Referring to FIG7, variation example 1 is described. In manufacturing method example 1, a metal oxide layer 12 is formed as a base layer between the support substrate 11 and the resin layer 13, but the base layer may not be provided.

[0245] like Figure 7A As shown, the resin layer 13 can also be formed directly on the support substrate 11 (without the substrate layer in between). Furthermore, as... Figure 7B As shown, an inorganic insulating layer 31 to a substrate 23 are formed on the resin layer 13.

[0246] Even if the resin layer 13 is formed directly on the support substrate 11, the support substrate 11 can be separated from the substrate 23 by performing at least one of the following: heat treatment in an oxygen-containing atmosphere during the formation of the resin layer 13, or laser irradiation of the resin layer 13. In this case, separation occurs at the interface between the support substrate 11 and the resin layer 13, or within the resin layer 13.

[0247] Figure 7B An example is shown where the insulating layer 34, used as the gate insulating layer of transistor 80, is located only between the conductive layer 85 and the metal oxide layer 83. The insulating layer 34 can also be fabricated into an island shape using the conductive layer 85 as a mask.

[0248] At this point, the inorganic insulating layer 36 preferably contains hydrogen. Through heat treatment or the like, the hydrogen contained in the inorganic insulating layer 36 diffuses to the region of the metal oxide layer 83 that is in contact with the inorganic insulating layer 36, and this region is reduced in resistance, thereby forming a low-resistance region 83n. When using the inorganic insulating layer 36 to form the low-resistance region 83n, since it is not necessary to add the aforementioned impurity elements, the manufacturing steps of the transistor 80 can sometimes be reduced.

[0249] <Example 2 of Manufacturing Method>

[0250] Example 2 of the manufacturing method of the light-emitting device is illustrated with reference to Figures 8 to 10.

[0251] First, an island-shaped metal layer 14 is formed on the support substrate 11. After surface treatment of the metal layer 14, an island-shaped oxide insulating layer 15 is formed. An inorganic insulating layer 31 is then formed on the support substrate 11 and the oxide insulating layer 15. Figure 8A ).

[0252] Preferably, the metal layer 14 and the oxide insulating layer 15 are arranged in an island shape, and the inorganic insulating layer 31 is provided in such a way that it covers the ends of the island-shaped metal layer 14 and the island-shaped oxide insulating layer 15. When the metal layer 14 and the oxide insulating layer 15 are provided on the entire surface of the support substrate 11, the oxide insulating layer 15 is sometimes unintentionally peeled off from the metal layer 14. Therefore, it is preferable to provide a region on the support substrate 11 that contacts the inorganic insulating layer 31. This can suppress unintentional peeling of the oxide insulating layer 15 from the metal layer 14. By forming a separation starting point and controlling the separation timing, the metal layer 14 and the oxide insulating layer 15 can be separated at a desired timing.

[0253] Examples of materials used for the metal layer 14 include metals, alloys containing elements selected from tungsten (W), molybdenum (Mo), titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, and silicon, as well as compounds containing such elements.

[0254] When the metal layer 14 has a single-layer structure, it is preferable to form a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum. Furthermore, a mixture of tungsten and molybdenum is, for example, equivalent to an alloy of tungsten and molybdenum. For example, an alloy film of molybdenum and tungsten with an atomic ratio of 3:1, 1:1, or 1:3 can also be used. For example, an alloy film of molybdenum and tungsten can be formed by sputtering using a metal target with a Mo:W composition of 49:51, 61:39, or 14.8:85.2 (wt%).

[0255] The metal layer 14 can be formed, for example, by sputtering, CVD (plasma CVD, thermal CVD, MOCVD, etc.), ALD, coating (including spin coating, droplet spraying, dispensing, etc.), printing, vapor deposition, etc.

[0256] The thickness of the metal layer 14 is 1 nm or more and 1000 nm or less, preferably 10 nm or more and 200 nm or less, and more preferably 10 nm or more and 100 nm or less.

[0257] As a surface treatment for the metal layer 14, plasma treatment is preferably performed on the surface of the metal layer 14. By changing the surface state of the metal layer 14, the adhesion between the metal layer 14 and the oxide insulating layer 15 can be controlled.

[0258] The plasma treatment is preferably performed in an atmosphere containing nitrous oxide. This oxidizes the surface of the metal layer 14, allowing an oxide layer (not shown) of the material constituting the metal layer 14 to be formed on the metal layer 14.

[0259] Plasma treatment is preferably performed in an atmosphere containing nitrous oxide and silane. This method allows the formation of an extremely thin oxide layer. The oxide layer can be so thin that it is difficult to observe in cross-section using an electron microscope or similar instrument. When the oxide layer is extremely thin, variations in the characteristics of the semiconductor device can be suppressed. Furthermore, even if the oxide layer is located on the side that extracts light from the light-emitting element, a decrease in the light extraction efficiency of the light-emitting device can be suppressed. Note that diethylsilane or propane can also be used instead of silane.

[0260] When plasma processing is performed in an atmosphere containing nitrous oxide and silane, while the surface of the metal layer 14 is oxidized due to nitrous oxide, a film (e.g., a silicon oxynitride film or a silicon oxynitride film) may sometimes form on the metal layer 14 due to silane. For example, an insulating layer with a thickness of 1 nm or more and less than 20 nm can also be formed during plasma processing. By forming an insulating layer on the metal layer 14 during plasma processing, the progress of oxidation of the metal layer 14 can be suppressed. As a result, a thin oxide layer can be formed on the metal layer 14.

[0261] The metal layer 14 preferably contains tungsten, titanium or molybdenum, and the oxide layer formed by plasma treatment preferably contains tungsten oxide, titanium oxide or molybdenum oxide.

[0262] Tungsten oxide is usually also in the form of WO3 x (2≤x<3) represents, and can be used as a molecule that typically has properties such as WO3, W2O5, and W4O. 11 Various non-stoichiometric compounds with compositions such as WO2 exist. Similarly, titanium oxide and molybdenum oxide can also exist as non-stoichiometric compounds.

[0263] Preferably, the oxide layer in this stage is in a state containing a relatively high amount of oxygen. For example, when tungsten is used as the metal layer 14, the oxide layer is preferably a tungsten oxide with WO3 as the main component.

[0264] As the oxide insulating layer 15, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon oxynitride film can be used. The oxide insulating layer 15 preferably contains oxygen, nitrogen, and silicon.

[0265] The oxide insulating layer 15 preferably also contains hydrogen. The oxide insulating layer 15 preferably has the function of releasing hydrogen in a subsequent heating process. Furthermore, the oxide insulating layer 15 may also have the function of releasing both hydrogen and nitrogen in a subsequent heating process.

[0266] The oxide insulating layer 15 preferably comprises a hydrogen concentration of 1.0 × 10⁻⁶, as detected by SIMS. 20 atoms / cm 3 Above and 1.0×10 22 atoms / cm 3 The following, preferably 5.0×10 20 atoms / cm 3 Above and 5.0×10 21 atoms / cm 3 The following areas.

[0267] The oxide insulating layer 15 preferably comprises a nitrogen concentration of 5.0 × 10⁻⁶ as detected by SIMS. 20 atoms / cm 3 Above and 1.0×10 23 atoms / cm 3 The preferred value is 1.0 × 10⁻⁶. 21 atoms / cm 3 Above and 5.0×10 22 atoms / cm 3 The following areas.

[0268] The oxide insulating layer 15 can be formed using film-forming methods such as sputtering and plasma CVD. In particular, plasma CVD, which uses a film-forming gas containing silane and nitrous oxide gases to form the silicon oxynitride film in the oxide insulating layer 15, is preferred because it allows for a higher concentration of hydrogen and nitrogen in the film. Furthermore, a higher proportion of silane gas in the film-forming gas results in greater hydrogen release during subsequent heating processes, which is also preferred.

[0269] Because a thicker oxide insulating layer 15 results in a greater release of hydrogen and nitrogen, it is preferred; however, the thickness is preferably set with production feasibility in mind. The thickness of the oxide insulating layer 15 is preferably 1 nm or more and 1 μm or less, more preferably 50 nm or more and 800 nm or less, even more preferably 100 nm or more and 400 nm or less, and even more preferably 100 nm or more and 200 nm or less.

[0270] The material of the inorganic insulating layer 31 can be referred to the description in Manufacturing Method Example 1. For example, the inorganic insulating layer 31 can be a silicon nitride film, a silicon oxynitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, an aluminum oxynitride film, or an aluminum oxynitride film.

[0271] The inorganic insulating layer 31 preferably comprises nitrogen and silicon. The inorganic insulating layer 31 is preferably made of silicon nitride film, silicon oxynitride film or silicon oxynitride film, and is particularly preferred to be made of silicon nitride film or silicon oxynitride film.

[0272] The inorganic insulating layer 31 preferably has the function of blocking hydrogen (and nitrogen) released from the oxide insulating layer 15 during subsequent heating processes.

[0273] The inorganic insulating layer 31 can be formed using film deposition methods such as sputtering and plasma CVD. For example, a silicon nitride film in the inorganic insulating layer 31 can be formed using plasma CVD with film deposition gases containing silane gas, nitrogen gas, and ammonia gas.

[0274] There is no particular limitation on the thickness of the inorganic insulating layer 31. For example, its thickness can be set to 50 nm or more and 600 nm or less, preferably 100 nm or more and 300 nm or less.

[0275] After the inorganic insulating layer 31 is formed, the metal layer 14 and the oxide insulating layer 15 are subjected to heat treatment. Through this heat treatment, hydrogen (and nitrogen) is released from the oxide insulating layer 15 and supplied to the oxide layer. At this time, because the inorganic insulating layer 31 blocks the released hydrogen (and nitrogen), hydrogen (and nitrogen) can be supplied to the oxide layer efficiently.

[0276] The heat treatment can be performed at a temperature above the temperature at which hydrogen (and nitrogen) detaches from the oxide insulating layer 15 and below the softening point of the supporting substrate 11. Furthermore, it is preferable to perform the heating at a temperature above the temperature at which the reduction reaction caused by hydrogen in the metal oxide within the oxide layer occurs. The higher the heat treatment temperature, the more hydrogen (and nitrogen) detaches from the oxide insulating layer 15, thus improving subsequent peelability. Note that if the heating time, heating temperature, and peelability become excessive, peeling may sometimes occur at unintended times. Therefore, when tungsten is used as the metal layer 14, heating is performed at a temperature of 300°C or higher and less than 700°C, preferably 400°C or higher and less than 650°C, and more preferably 400°C or higher and less than 500°C.

[0277] There are no particular restrictions on the atmosphere for heat treatment; heat treatment can be carried out in an atmospheric atmosphere, but it is preferred to carry it out in an inert gas atmosphere such as nitrogen or rare gases.

[0278] This heat treatment can be performed at any of the following stages: before, during, or after transistor manufacturing. Heat treatment during transistor manufacturing processes can also serve as this heat treatment.

[0279] Next, openings leading to the support substrate 11 are formed in the metal layer 14, the oxide insulating layer 15, and the inorganic insulating layer 31. Figure 8AThe process of forming the opening can be performed before the formation of the organic insulating layer 35, or at any of the times before, during, or after the manufacture of the transistor 80.

[0280] Next, transistor 70 is formed on inorganic insulating layer 31. Figure 8B ).

[0281] Here, we show a case where a transistor 70 is fabricated, comprising a metal oxide layer 73 and two gates.

[0282] Specifically, firstly, a conductive layer 71, which serves as a gate electrode, is formed on the inorganic insulating layer 31. The conductive layer 71 can be formed by forming a resist mask after the conductive film is formed, etching the conductive film, and then removing the resist mask.

[0283] Next, an insulating layer 32 is formed to serve as a gate insulating layer. An inorganic insulating film that can be used as an inorganic insulating layer 31 can be applied as the insulating layer 32.

[0284] Next, a metal oxide layer 73 is formed. The metal oxide layer 73 can be formed by forming a resist mask after the metal oxide film is formed, etching the metal oxide film, and then removing the resist mask. The metal oxide layer 73 can be made from a material suitable for use with the metal oxide layer 83.

[0285] Next, conductive layers 77a and 77b are formed. Conductive layers 77a and 77b can be formed by forming a resist mask after the conductive film is formed, etching the conductive film, and then removing the resist mask. Both conductive layers 77a and 77b are electrically connected to the metal oxide layer 73.

[0286] Note that during the processing of conductive layers 77a and 77b, the portion of the metal oxide layer 73 not covered by the resist mask may be thinned due to etching.

[0287] Next, an insulating layer 34 is formed to serve as a gate insulating layer. The insulating layer 34 may utilize an inorganic insulating film that can be used for the inorganic insulating layer 31.

[0288] Next, a conductive layer 75, which serves as a gate electrode, is formed on the insulating layer 34. The conductive layer 75 can be formed by forming a resist mask after the conductive film is formed, and then removing the resist mask after etching the conductive film.

[0289] Through the above steps, transistor 70 can be manufactured. Figure 8B ).

[0290] Next, an inorganic insulating layer 36 is formed, covering the metal oxide layer 73, the insulating layer 34, and the conductive layer 75. The inorganic insulating layer 36 can be formed by the same method as the inorganic insulating layer 31.

[0291] Note that openings leading to the support substrate 11 are formed in insulating layers 32, 34, and 36. Figure 8B The opening can be formed before the organic insulating layer 35 is formed, or it can be formed during or after the fabrication of the transistor 70. Note that the opening can be formed in multiple layers at once, or it can be formed in each layer.

[0292] Next, an organic insulating layer 35 is formed on the support substrate 11, the inorganic insulating layer 36, and the transistor 70. Figure 8C The material of the organic insulating layer 35 can be referred to the description in Example 1 of the manufacturing method.

[0293] The organic insulating layer 35 is disposed in such a way that it is embedded in an opening provided in the metal layer 14, the oxide insulating layer 15, the inorganic insulating layer 31, the insulating layer 32, the insulating layer 34, and the inorganic insulating layer 36, and contacts the support substrate 11 through the opening. The organic insulating layer 35 is formed such that it includes an opening inside the opening that reaches the inorganic insulating layer 36. Furthermore, the organic insulating layer 35 is formed such that it includes an opening that reaches the conductive layer 87a.

[0294] Next, similar to manufacturing method example 1, a stacked structure of electrode 61 to substrate 23 is formed. Figure 8D ).

[0295] Example 2 of this manufacturing method illustrates an example of manufacturing a bottom-emitting structure light-emitting device. The light-emitting region of the light-emitting element 60 is positioned where it does not overlap with the transistor 70. The light-emitting element 60 is an electroluminescent element that emits light onto one side of the organic insulating layer 35.

[0296] Next, the separation starting point is formed ( Figure 9A Separate the metal layer 14 from the oxide insulating layer 15. Figure 9B ).

[0297] Figure 9A An example is shown where a sharp-shaped tool 65, such as a knife, is inserted into the inner side of the end of the metal layer 14 from the substrate 23 side to form a cut. The cut is preferably formed in a frame shape.

[0298] Separation mainly occurs within the oxide layer located between the metal layer 14 and the oxide insulating layer 15, as well as at the interface between the oxide layer and the oxide insulating layer 15.

[0299] Here, in the region where the organic insulating layer 35 and the supporting substrate 11 are in contact with each other, separation occurs at the interface between the supporting substrate 11 and the organic insulating layer 35. For example, by irradiating this region with a laser, the adhesion between the supporting substrate 11 and the organic insulating layer 35 can be reduced, causing separation at the interface between the supporting substrate 11 and the organic insulating layer 35.

[0300] Then, the substrate 21 is bonded to the exposed oxide insulating layer 15 and organic insulating layer 35 using the adhesive layer 22. Figure 10A Therefore, transistors 70 and light-emitting elements 60 formed on the support substrate 11 can be transferred from the support substrate 11 to the substrate 23.

[0301] Note that sometimes, due to differences in the separation interface, unevenness occurs on the exposed surface after separation. Using a liquid adhesive to form the adhesive layer 22 is preferable to using a thin-film adhesive, as it can flatten the uneven surface. This results in a more uniform thickness for the light-emitting device.

[0302] The materials of the adhesive layer 22 and the substrate 21 can be referred to the description of manufacturing method example 1.

[0303] By processing the shape of the light-emitting device, a light-emitting device can be manufactured. Figure 10B and Figure 10C ).like Figure 10B As shown, the break line 66 is broken in such a way that it overlaps with the openings provided in the oxide insulating layer 15, inorganic insulating layer 31, insulating layer 32, insulating layer 34, and inorganic insulating layer 36. No inorganic film is provided at the break point. Therefore, the generation of microcracks inside the light-emitting device due to the break can be suppressed. Furthermore, even if the light-emitting device is held in a bent state for a long time or repeatedly bent, the generation and propagation of cracks can be suppressed.

[0304] Although Figure 10C The sides of the light-emitting device shown primarily expose an organic film, but the top, sides, and bottom surfaces of the transistor 70 and the light-emitting element 60 are surrounded by multiple inorganic insulating layers (inorganic insulating layer 31, inorganic insulating layer 36, and inorganic insulating layer 64, etc.). Therefore, impurities can be suppressed from entering the transistor 70 and the light-emitting element 60, thereby improving the reliability of the transistor 70 and the light-emitting element 60.

[0305] <Example 2 of the variation>

[0306] Modified Example 2 will be described with reference to FIG11. In Manufacturing Method Example 2, although the organic insulating layer 35 is formed by embedding an opening in the stacked structure of the metal layer 14 to the inorganic insulating layer 36, it is also possible to provide an organic insulating layer 39 with the embedded opening on the inorganic insulating layer 36 before providing the organic insulating layer 35. As a result, separation occurs at the interface between the supporting substrate 11 and the organic insulating layer 39, but not at the interface between the supporting substrate 11 and the organic insulating layer 35. The organic insulating layer 39 is preferably provided only at and near the break, and not at the light-emitting part, circuit, external connection terminal, wiring part, etc.

[0307] To achieve separation at the interface between the support substrate 11 and the organic insulating layer 35, it is preferable to perform at least one of heating treatment in an oxygen-containing atmosphere during the formation of the organic insulating layer 35 and irradiation of the organic insulating layer 35 with a laser. However, applying high temperatures to the organic insulating layer 35 can cause damage, potentially reducing the reliability of the light-emitting device. By additionally providing an organic insulating layer 39, damage in the organic insulating layer 35 can be suppressed. Furthermore, by using different materials for the organic insulating layer 35 and the organic insulating layer 39, layers suitable for each function can be formed. For example, it is preferable to use acrylic resin as the organic insulating layer 35 and polyimide resin as the organic insulating layer 39. This allows for the formation of an organic insulating layer 35 with high planarization performance and high peelability.

[0308] Specifically, similar to manufacturing method example 2, forming Figure 8B The stacked structure shown is configured such that an organic insulating layer 39 is formed by embedding an opening in the stacked structure from the metal layer 14 to the inorganic insulating layer 36. Figure 11A Then, an organic insulating layer 35 is formed on the inorganic insulating layer 36 and the organic insulating layer 39. Figure 11B ).

[0309] The organic insulating layer 39 is disposed at the location where it is separated in the subsequent separation process. The organic insulating layer 39 is preferably disposed in a manner that does not extend into the light-emitting part, circuit, wiring part, etc.

[0310] The material used for the organic insulating layer 39 can be the same as the material used for the resin layer 13 in manufacturing method example 1. The support substrate 11 can be separated from the organic insulating layer 39 by performing at least one of heat treatment in an oxygen-containing atmosphere during the formation of the organic insulating layer 39 and laser irradiation of the organic insulating layer 39.

[0311] The organic insulating layer 35 is formed such that it includes an opening leading to the inorganic insulating layer 36 inside the opening in the stacked structure of the metal layer 14 to the inorganic insulating layer 36. Furthermore, the organic insulating layer 35 is formed such that it includes an opening leading to the conductive layer 87a.

[0312] <Example 3 of Manufacturing Methods>

[0313] Example 3 of the manufacturing method of the light-emitting device will be described with reference to Figures 12 to 14.

[0314] First, an island-shaped metal layer 14 is formed on a support substrate 11. After surface treatment of the metal layer 14, an island-shaped oxide insulating layer 15 is formed. An island-shaped metal layer 16 is then formed on the island-shaped oxide insulating layer 15. Figure 12A ).

[0315] The material of the metal layer 14 can be referred to the description in manufacturing method example 2. Similar to manufacturing method example 2, as a surface treatment of the metal layer 14, it is preferable to perform plasma treatment on the surface of the metal layer 14 to supply oxygen to the metal layer 14.

[0316] The oxide insulating layer 15 preferably has the function of releasing hydrogen and fluorine in a subsequent heating process. The oxide insulating layer 15 may also have the function of releasing nitrogen in a subsequent heating process.

[0317] For example, after forming the oxide insulating layer 15 using the material described in manufacturing method example 2, fluorine can also be supplied to the oxide insulating layer 15 by performing a surface treatment using a fluorine-containing gas. For example, fluorine can be supplied to the oxide insulating layer 15 by performing plasma treatment using sulfur hexafluoride (SF6) gas.

[0318] Alternatively, a fluorine-containing gas can be used to form the oxide insulating layer 15. For example, a fluorine-containing silicon oxide (SiOF) film can be formed using plasma CVD with a film-forming gas containing silane gas, nitrous oxide and silicon tetrafluoride (SiF4) gas.

[0319] The oxide insulating layer 15 can also be a laminated structure with layers that release hydrogen and layers that release fluorine. In this case, it is preferable to have a layer that releases hydrogen on the metal layer 14 side and a layer that releases fluorine on the metal layer 16 side.

[0320] Metal layer 16 may use materials that are also used in metal layer 14. Metal layer 16 is preferably formed using nickel, titanium, silver, and alloys containing any of these.

[0321] Metal layers 14 and 16 preferably comprise different metals. For example, it is preferred that metal layer 14 uses tungsten and metal layer 16 uses titanium. This makes it easy to control the separation interface, thereby improving the yield of the separation process.

[0322] The metal layer 16 is disposed at the location where it will be cut off in a subsequent process. The metal layer 16 is disposed in a manner that does not extend into the light-emitting part, circuit, wiring part, etc.

[0323] Next, similar to manufacturing method example 2, an inorganic insulating layer 31 is formed, and a transistor 70 and an inorganic insulating layer 36 are also formed. Figure 12B ).

[0324] After the inorganic insulating layer 31 is formed, the metal layer 14, oxide insulating layer 15, and metal layer 16 are subjected to heat treatment. During this heat treatment, hydrogen and fluorine (and nitrogen) are released from the oxide insulating layer 15 and supplied to the metal layer 16. At this time, because the inorganic insulating layer 31 blocks the released hydrogen and fluorine (and nitrogen), hydrogen and fluorine (and nitrogen) can be supplied to the metal layer 16 efficiently.

[0325] The heat treatment can be performed at a temperature above the temperature at which hydrogen and fluorine (and nitrogen) detach from the oxide insulating layer 15 and below the softening point of the supporting substrate 11. The higher the heat treatment temperature, the more hydrogen and fluorine (and nitrogen) detach from the oxide insulating layer 15, thus improving subsequent peelability.

[0326] There are no particular restrictions on the atmosphere for heat treatment; heat treatment can be carried out in an atmospheric atmosphere, but it is preferred to carry it out in an inert gas atmosphere such as nitrogen or rare gases.

[0327] This heat treatment can be performed at any of the following stages: before, during, or after transistor manufacturing. Heat treatment during transistor manufacturing processes can also serve as this heat treatment.

[0328] Note that openings reaching the metal layer 16 are formed in inorganic insulating layers 31, 32, 34, and 36. These openings can be formed before the organic insulating layer 35 is formed. Note that the openings can be formed either all at once in multiple layers or in each layer individually.

[0329] Next, similar to manufacturing method example 2, an organic insulating layer 35 is formed on the metal layer 16, the inorganic insulating layer 36, and the transistor 70. Figure 12C ).

[0330] The organic insulating layer 35 is disposed in such a way that it is embedded in openings provided in the inorganic insulating layers 31, 32, 34 and 36, and contacts the metal layer 16 through these openings. The organic insulating layer 35 is formed such that it includes an opening inside the opening that reaches the inorganic insulating layer 36. Furthermore, the organic insulating layer 35 is formed such that it includes an opening that reaches the conductive layer 77a.

[0331] Next, similar to manufacturing method example 1 and manufacturing method example 2, a stacked structure of electrode 61 to substrate 23 is formed. Figure 12D ).

[0332] Next, the separation starting point is formed ( Figure 13A This separates the metal layer 14 from the oxide insulating layer 15. Figure 13B ).

[0333] Figure 13A An example is shown where a sharp tool 65, such as a cutting tool, is inserted into the inside of the end of the metal layer 14 from the side of the substrate 23 to form a cut. The cut is preferably formed in a frame shape.

[0334] Separation mainly occurs within the oxide layer located between the metal layer 14 and the oxide insulating layer 15, as well as at the interface between the oxide layer and the oxide insulating layer 15.

[0335] Here, in the region where the metal layer 16 is provided, separation occurs at the interface between the oxide insulating layer 15 and the metal layer 16.

[0336] Then, the substrate 21 is bonded to the exposed oxide insulating layer 15 and metal layer 16 using the adhesive layer 22. Figure 14A Therefore, transistors 70 and light-emitting elements 60 formed on the support substrate 11 can be transferred from the support substrate 11 to the substrate 23.

[0337] The materials of the adhesive layer 22 and the substrate 21 can be referred to the description of manufacturing method example 1.

[0338] By processing the shape of the light-emitting device, a light-emitting device can be manufactured. Figure 14B and Figure 14C ).like Figure 14B As shown, the break is achieved by overlapping the break line 66 with the openings provided in the inorganic insulating layers 31, 32, 34, and 36. A metal layer 16 is provided at the break point, but this metal layer 16 does not extend into the light-emitting part. In other words, no inorganic film extending into the light-emitting part, circuit, or wiring is provided at the break point. Therefore, even if microcracks are generated in the metal layer 16 during the break, the propagation of these microcracks to the light-emitting part, circuit, and wiring can be suppressed. Furthermore, even if the light-emitting device is held in a bent state for a long time or repeatedly bent, the generation and propagation of cracks can be suppressed.

[0339] Although Figure 14C The sides of the light-emitting device shown primarily expose an organic film, but the top, sides, and bottom surfaces of the transistor 70 and the light-emitting element 60 are surrounded by multiple inorganic insulating layers (inorganic insulating layer 31, inorganic insulating layer 36, and inorganic insulating layer 64, etc.). Therefore, impurities can be suppressed from entering the transistor 70 and the light-emitting element 60, thereby improving the reliability of the transistor 70 and the light-emitting element 60.

[0340] <Example 4 of Manufacturing Methods>

[0341] Example 4 of the manufacturing method of the light-emitting device will be described with reference to Figures 15 to 18.

[0342] In manufacturing method example 4, a release layer is provided between the support substrate 11 and the inorganic insulating layer 31, and a release layer is provided between the support substrate 91 and the inorganic insulating layer 97, thereby transferring the constituent elements provided on the support substrate 11 and the support substrate 91 to other substrates. There are no particular limitations on the release layers; the structure of the release layer provided on the support substrate 11 can be the same as or different from the structure of the release layer provided on the support substrate 91.

[0343] First, similar to manufacturing method example 1, an island-shaped metal oxide layer 12 is formed on the support substrate 11, an island-shaped resin layer 13 is formed on the metal oxide layer 12, an inorganic insulating layer 31 is formed on the support substrate 11 and the resin layer 13, and a transistor 80, an organic insulating layer 35, a light-emitting element 60, a partition wall 37, and an inorganic insulating layer 64 are formed on the inorganic insulating layer 31. Figure 15A ).

[0344] In addition, with Figure 15A The process involves independently forming an island-shaped release layer on a support substrate 91, forming an inorganic insulating layer 97 on the release layer, and forming a coloring layer CF and a light-shielding layer BM on the inorganic insulating layer 97.

[0345] Color filters or the like can be used as the coloring layer CF. The coloring layer CF is configured to overlap with the light-emitting area of ​​the light-emitting element 60 when it overlaps with the support substrate 11.

[0346] The light-shielding layer BM can be a black matrix or the like. The light-shielding layer BM is configured to overlap with the partition wall 37 when it overlaps with the support substrate 11.

[0347] Figure 15B An example of a laminated structure using a metal layer 94 and an oxide insulating layer 95 is shown. The metal layer 94 and the oxide insulating layer 95 correspond to the metal layer 14 and the oxide insulating layer 15 in manufacturing method example 2, respectively.

[0348] Figure 15C An example of a laminated structure using a metal oxide layer 92 and a resin layer 93 is shown. The metal oxide layer 92 and the resin layer 93 correspond to the metal oxide layer 12 and the resin layer 13 of manufacturing method example 1, respectively.

[0349] In the future, if Figure 15B As shown, the example is a case where a metal layer 94 and an oxide insulating layer 95 are applied to the release layer on the support substrate 91.

[0350] An organic insulating layer 99 is formed by embedding an opening in the stacked structure of the metal layer 94 to the inorganic insulating layer 97. Figure 15B ).

[0351] Next, the surface of the support substrate 11 where the transistor 80 is formed is bonded to the surface of the support substrate 91 where the coloring layer CF is formed using the adhesive layer 98. Figure 15D ).

[0352] The adhesive layer 98 can use materials that can be used in the adhesive layer 24.

[0353] Next, a separation initiation point is formed. Separation can occur from either support substrate 11 or support substrate 91. Figure 16A In this process, laser 57a is partially irradiated from one side of the support substrate 11 to the interface or vicinity of the metal oxide layer 12 and the resin layer 13, thereby partially separating the metal oxide layer 12 and the resin layer 13.

[0354] Next, the metal oxide layer 12 is separated from the resin layer 13 from the separation starting point. Figure 16B ).Notice, Figure 16B An example is shown where separation occurs in the region of the adhesive layer 98 where the metal oxide layer 12 does not form, but this is not the only example. Furthermore, in Figure 16B In order to simplify, the separation interface of the adhesive layer 98 is smooth, but it can also be uneven.

[0355] Furthermore, here, the exposed resin layer 13 is removed by separation, exposing the inorganic insulating layer 31. Then, the substrate 21 is bonded to the inorganic insulating layer 31 using the adhesive layer 22. Figure 17A ).

[0356] Next, the separation point is formed. Figure 17A In this process, laser 57b is partially irradiated from one side of the support substrate 91 onto the interface or vicinity of the metal layer 94 and the oxide insulating layer 95, causing the metal layer 94 and the oxide insulating layer 95 to be partially separated.

[0357] Next, the metal layer 94 is separated from the oxide insulating layer 95 from the separation starting point. Figure 17B ).

[0358] Then, the substrate 23 is bonded to the exposed oxide insulating layer 95 using the adhesive layer 24. Figure 18A ).

[0359] By processing the shape of the light-emitting device, a light-emitting device can be manufactured. Figure 18B and Figure 18C ).like Figure 18BAs shown, the break line 66 is broken in a manner that overlaps with the openings provided in the inorganic insulating layer 31, insulating layer 32, insulating layer 34, and inorganic insulating layer 36, as well as the organic insulating layer 99. That is, no inorganic film is provided at the break point. Therefore, the generation of microcracks inside the light-emitting device due to the break can be suppressed. Furthermore, even if the light-emitting device is held in a bent state for a long time or repeatedly bent, the generation and propagation of cracks can be suppressed.

[0360] Although Figure 18C The sides of the light-emitting device shown primarily expose an organic film, but the top, sides, and bottom surfaces of the transistor 80 (semiconductor layer) and the light-emitting element 60 are surrounded by multiple inorganic insulating layers (inorganic insulating layer 31, inorganic insulating layer 36, and inorganic insulating layer 64, etc.). Therefore, impurities can be suppressed from entering the transistor 80 and the light-emitting element 60, thereby improving the reliability of the transistor 80 and the light-emitting element 60.

[0361] [Specific examples of light-emitting devices]

[0362] Refer to Figure 19 to Figure 22 The specific structure of the light-emitting device is explained.

[0363] <Structure Example 1>

[0364] Figure 19A A top view of the light-emitting device 100A is shown. The light-emitting device 100A includes a light-emitting part 381, a circuit 382, ​​and a wiring part 384.

[0365] Regions 50a and 50b are provided along the long side of the light-emitting device 100A. Regions 50a and 50b are provided in such a way that the light-emitting part 381 and the wiring part 384 are sandwiched between them.

[0366] The light-emitting device 100A can be bent, for example, in regions 52A and 52B. The light-emitting device 100A can be bent in region 52A along a line passing through regions 50a, 50b, and the light-emitting portion 381, which together form three sections. Furthermore, the light-emitting device 100A can be bent in region 52B along a line passing through regions 50a, 50b, and the wiring portion 384, which together form three sections.

[0367] Regions 50a and 50b are areas without an inorganic film. Therefore, by bending the light-emitting device 100A in a manner that includes these regions, the generation and propagation of cracks can be suppressed. This improves the bending resistance of the light-emitting device 100A.

[0368] Figure 19B Show Figure 19A The cross-sectional view between the dotted and dashed lines A1-A2 is shown.

[0369] like Figure 19BAs shown, the light-emitting device 100A includes a substrate 21, an adhesive layer 22, a resin layer 13, an inorganic insulating layer 31, a transistor 80, an organic insulating layer 35, a light-emitting element 60, an inorganic insulating layer 64, an adhesive layer 24, and a substrate 23.

[0370] The light-emitting device 100A can be manufactured, for example, using the manufacturing method described in Example 1 above.

[0371] The substrate 21 and the resin layer 13 are bonded together by the adhesive layer 22. Alternatively, the resin layer 13 can be removed to bond the inorganic insulating layer 31 to the substrate 21.

[0372] The light-emitting part 381 includes a transistor 80 electrically connected to the light-emitting element 60. The transistor 80 has the function of controlling the driving of the light-emitting element 60.

[0373] Circuit 382 includes a transistor 80 having the same structure as the transistor 80 included in the light-emitting part 381.

[0374] The transistors included in circuit 382 and the transistors included in light-emitting part 381 can have the same structure or different structures. The multiple transistors included in circuit 382 can have the same structure or two or more different structures. Similarly, the multiple transistors included in light-emitting part 381 can have the same structure or two or more different structures.

[0375] The conductive layer 385 is electrically connected to the FPC via the connector 386. The conductive layer 385 can be formed using the same material and the same process as the source and drain of the transistor 80.

[0376] As the connector 386, various anisotropic conductive films (ACF) and anisotropic conductive pastes (ACP) can be used.

[0377] The light-emitting element 60 emits light onto one side of the substrate 23 (see light emission 20). The substrate 23 is made of a material that transmits visible light.

[0378] Various optical components can be disposed on the outer side of the substrate 23. These optical components may include polarizers, retardation plates, light diffusion layers (diffusion films, etc.), antireflective layers, and condensing films. Furthermore, antistatic films that inhibit dust adhesion, water-repellent films that are not easily soiled, hard coatings that prevent damage during use, and impact absorption layers may also be disposed on the outer side of the substrate 23.

[0379] The side surface of the light-emitting device 100A is the surface exposed during the manufacturing process of the light-emitting device 100A through a sectioning process in the shape machining. Since the inorganic insulating layers 31, 32, 34, 36, and 64 are not provided in the region 50a including the side surface of the light-emitting device 100A, cracking in these layers during sectioning can be suppressed. Therefore, even if the light-emitting device 100A is held in a bent state for a long time or repeatedly bent, cracks are not easily generated inside the light-emitting device 100A, and even if cracks do occur, they are not easily propagated. This improves the bending resistance of the light-emitting device 100A.

[0380] The region 50, including the side surface of the light-emitting device 100A, includes a substrate 21, an adhesive layer 22, a resin layer 13, an organic insulating layer 35, an adhesive layer 24, and a substrate 23. These layers preferably all contain organic materials. On the other hand, since organic materials are less waterproof than inorganic materials, there is a concern that impurities such as water may enter the interior of the light-emitting device 100A from the side surface through region 50. Therefore, the inorganic insulating layers are preferably in contact with each other on the outer side of the end of the transistor 80 (at least the end of the semiconductor layer forming the channel) and on the inner side of region 50, and on the outer side of the end of the light-emitting element 60 and on the inner side of region 50. Thus, even if impurities enter from the side surface of the light-emitting device 100A through region 50, the impurities are less likely to reach the light-emitting element 60 and the transistor 40, thereby improving the reliability of the light-emitting device 10A.

[0381] In the light-emitting device 100A, the top, bottom, and side surfaces of the semiconductor layer are covered by a stacked structure of inorganic insulating layers 31, 32, 34, and 36. Furthermore, the inorganic insulating layer 36 and the inorganic insulating layer 64 are in contact with each other through an opening in the organic insulating layer 35. This structure helps to suppress impurities from entering the light-emitting element 60 and the transistor 80.

[0382] <Structure Example 2>

[0383] Figure 20A A cross-sectional view of the light-emitting device 100B is shown.

[0384] like Figure 20A As shown, the light-emitting device 100B includes a substrate 21, an adhesive layer 22, an oxide insulating layer 15, an inorganic insulating layer 31, a transistor 70, an organic insulating layer 35, a light-emitting element 60, an inorganic insulating layer 64, an adhesive layer 24, and a substrate 23.

[0385] The light-emitting device 100B can be manufactured, for example, using the manufacturing method described in Example 2 above.

[0386] The substrate 21 and the oxide insulating layer 15 are bonded together by the adhesive layer 22.

[0387] The light-emitting part 381 includes a transistor 70 electrically connected to the light-emitting element 60. The transistor 70 has the function of controlling the driving of the light-emitting element 60.

[0388] Circuit 382 includes a transistor 70 having the same structure as the transistor 70 included in the light-emitting part 381.

[0389] The conductive layer 385 is electrically connected to the FPC via the conductive layer 387 and the connector 386. The conductive layer 385 can be formed using the same material and the same process as the source and drain of the transistor 70. The conductive layer 387 can be formed using the same material and the same process as the pixel electrode of the light-emitting element 60.

[0390] The light-emitting element 60 emits light onto one side of the substrate 21 (see light emission 20). The substrate 21 is made of a material that transmits visible light.

[0391] Figure 20B An example is shown where the protective layer of the light-emitting element 60 includes a protective layer 69 but does not include an inorganic insulating layer 64. The protective layer 69 includes an inorganic insulating layer 69a on the electrode 63, an organic insulating layer 69b on the inorganic insulating layer 69a, and an inorganic insulating layer 69c on the organic insulating layer 69b.

[0392] The ends of inorganic insulating layer 69a and inorganic insulating layer 69c extend to the outside of the end of organic insulating layer 69b, and they are in contact with each other. Inorganic insulating layer 69a contacts inorganic insulating layer 36 through an opening in organic insulating layer 35. Thus, since the light-emitting element 60 can be surrounded by inorganic insulating layer 36 and protective layer 69, the reliability of light-emitting element 60 can be improved.

[0393] In this way, the protective layer of the light-emitting element 60 can also have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, the end of the inorganic insulating film preferably extends to the outside of the end of the organic insulating film.

[0394] <Structure Example 3>

[0395] Figure 21A A top view of the light-emitting device 100C is shown. The light-emitting device 100C includes a light-emitting part 381, a circuit 382, ​​and a wiring part 384.

[0396] Regions 50a and 50b are provided along the long side of the light-emitting device 100C. Regions 50a and 50b are provided such that the light-emitting part 381 is sandwiched between them. Regions 50a and 50b can also be provided such that the wiring part 384 is sandwiched between them.

[0397] The light-emitting device 100C can be bent, for example, in region 52A. The light-emitting device 100C can be bent in region 52A along a line that passes through three parts: region 50a, region 50b, and the light-emitting part 381.

[0398] Regions 50a and 50b are areas where the inorganic film extending into the light-emitting portion 381 is not provided. Therefore, by bending the light-emitting device 100C in a manner that includes these regions, the generation and propagation of cracks can be suppressed. As a result, the bending resistance of the light-emitting device 100C can be improved.

[0399] Figure 21B Show Figure 21A The cross-sectional view between the dotted lines B1 and B2 is shown.

[0400] like Figure 21B As shown, the light-emitting device 100C includes a substrate 21, an adhesive layer 22, an oxide insulating layer 15, a metal layer 16, an inorganic insulating layer 31, a transistor 70, an organic insulating layer 35, a light-emitting element 60, an inorganic insulating layer 64, an adhesive layer 24, and a substrate 23.

[0401] The light-emitting device 100C can be manufactured, for example, using the manufacturing method described in Example 3 above.

[0402] The substrate 21 is bonded to the oxide insulating layer 15 by the adhesive layer 22. Furthermore, in region 50a, the substrate 21 is bonded to the metal layer 16 by the adhesive layer 22.

[0403] The light-emitting part 381 includes a transistor 70 electrically connected to the light-emitting element 60. The transistor 70 has the function of controlling the driving of the light-emitting element 60.

[0404] Circuit 382 includes a transistor 70 having the same structure as the transistor 70 included in the light-emitting part 381.

[0405] The conductive layer 385 is electrically connected to the FPC through the metal layer 16 and the connector 386. The conductive layer 385 can be formed using the same material and the same process as the source and drain of the transistor 70.

[0406] The light-emitting device 100C manufactured using manufacturing method example 3 exposes a portion of the metal layer 16 after the support substrate is peeled off. This metal layer 16 can be used as a back electrode, a through electrode, an external connection terminal, etc. For example, it can be electrically connected to a circuit board such as an FPC through the metal layer 16.

[0407] In other words, the light-emitting device 100C includes a metal layer 16 that is used as an external connection terminal and a metal layer 16 disposed in a region (region 50a, etc.) where an inorganic film extending to the light-emitting part 381 is not disposed.

[0408] The light-emitting element 60 emits light onto one side of the substrate 23 (see light emission 20). The substrate 23 is made of a material that transmits visible light.

[0409] By using the metal layer 16, the FPC can be positioned on the side opposite to the light extraction surface of the light-emitting element 60. Therefore, when assembling the light-emitting device in an electronic device, the space required for bending the FPC can be omitted, thereby enabling a smaller electronic device.

[0410] <Structure Example 4>

[0411] Figure 22 A cross-sectional view of the light-emitting device 100D is shown.

[0412] like Figure 22 As shown, the light-emitting device 100D includes a substrate 21, an adhesive layer 22, an inorganic insulating layer 31, a transistor 80, an organic insulating layer 35, a light-emitting element 60, an inorganic insulating layer 64, an adhesive layer 98, a coloring layer CF, a light-shielding layer BM, an inorganic insulating layer 97, an oxide insulating layer 95, an adhesive layer 24, and a substrate 23.

[0413] The light-emitting device 100D can be manufactured, for example, using the manufacturing method described in Example 4 above.

[0414] Substrate 21 is bonded to inorganic insulating layer 31 by adhesive layer 22. Substrate 23 is bonded to oxide insulating layer 95 by adhesive layer 24.

[0415] The light-emitting part 381 includes a transistor 80 electrically connected to the light-emitting element 60. The transistor 80 has the function of controlling the driving of the light-emitting element 60.

[0416] Circuit 382 includes a transistor 70 having the same structure as the transistor 80 included in the light-emitting part 381.

[0417] The conductive layer 385 is electrically connected to the FPC via the connector 386. The conductive layer 385 can be formed using the same material and the same process as the source and drain of the transistor 80.

[0418] The light-emitting device 100D is a top-structure light-emitting device using a color filter method. The light-emitting element 60 emits light through the color layer CF to one side of the substrate 23 (see light-emitting 20). The substrate 23 is made of a material that transmits visible light.

[0419] [Metal Oxides]

[0420] The following will describe the metal oxides that can be used as semiconductor layers in transistors.

[0421] In this specification and other materials, nitrogen-containing metal oxides are sometimes referred to as metal oxides. Furthermore, nitrogen-containing metal oxides may also be referred to as metal oxynitrides. For example, nitrogen-containing metal oxides such as zinc oxynitride (ZnON) can be used in semiconductor layers.

[0422] In this specification and other materials, it is sometimes referred to as CAAC (c-axis aligned crystal) or CAC (Cloud-Aligned Composite). CAAC refers to an example of a crystalline structure, while CAC refers to an example of a function or material composition.

[0423] For example, CAC (Cloud-Aligned Composite)-OS can be used as a semiconductor layer.

[0424] CAC-OS or CAC-metal oxide functions as a conductor in one part of the material and an insulator in another, thus functioning as a semiconductor as a whole. Furthermore, when CAC-OS or CAC-metal oxide is used as the semiconductor layer of a transistor, the conductivity allows electrons (or holes) to flow, while the insulation prevents them from flowing. Through the complementary interaction of conductivity and insulation, CAC-OS or CAC-metal oxide can possess a switching function (on / off function). By separating these functions within CAC-OS or CAC-metal oxide, each function can be maximized.

[0425] Furthermore, CAC-OS or CAC-metal oxide comprises conductive and insulating regions. The conductive regions possess the aforementioned conductive function, and the insulating regions possess the aforementioned insulating function. Moreover, in the material, the conductive and insulating regions are sometimes separated at the nanoparticle level. Additionally, the conductive and insulating regions are sometimes unevenly distributed within the material. Furthermore, conductive regions with blurred edges and cloud-like connections are sometimes observed.

[0426] Furthermore, in CAC-OS or CAC-metal oxide, conductive and insulating regions are sometimes dispersed in the material at a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less.

[0427] Furthermore, CAC-OS or CAC-metal oxide is composed of components with different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component with a wide gap originating from an insulating region and a component with a narrow gap originating from a conductive region. In this configuration, when charge carriers flow through, they mainly flow through the component with the narrow gap. Moreover, the component with the narrow gap, through complementary interaction with the component with the wide gap, causes charge carriers to flow through the component with the wide gap. Therefore, when the aforementioned CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, a high current driving force, i.e., a large on-state current and a high field-effect mobility, can be obtained in the transistor's on-state.

[0428] In other words, CAC-OS or CAC-metal oxide can also be referred to as matrix composite or metal matrix composite.

[0429] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), a-like OS (amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0430] CAAC-OS exhibits c-axis orientation, with multiple nanocrystals linked along the ab-plane direction, resulting in a distorted crystal structure. Note that distortion refers to the portion of the lattice orientation that changes between regions with consistent lattice arrangement and other regions with consistent lattice arrangement within the region where multiple nanocrystals are linked.

[0431] Although nanocrystals are primarily hexagonal, they are not limited to regular hexagons and can be non-regular hexagonal. Furthermore, pentagonal or heptagonal lattice arrangements sometimes exist in the distortion. Additionally, in CAAC-OS, clear grain boundaries are difficult to observe even near the distortion. That is, it is known that lattice arrangement distortion can suppress grain boundary formation. This is because CAAC-OS can accommodate distortion due to the low density of oxygen atoms along the ab plane or changes in interatomic bonding distance caused by the substitution of metal elements.

[0432] CAAC-OS tends to have a layered crystalline structure (also called a layered structure), in which layers containing indium and oxygen (hereinafter referred to as In layers) and layers containing elements M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. Furthermore, indium and element M can be substituted for each other; when element M in a (M,Zn) layer is replaced by indium, the layer can also be represented as an (In,M,Zn) layer. Similarly, when indium in an In layer is replaced by element M, the layer can also be represented as an (In,M) layer.

[0433] CAAC-OS is a highly crystalline metal oxide. On the other hand, distinct grain boundaries are not easily observed in CAAC-OS, thus reducing the likelihood of a decrease in electron mobility due to grain boundaries. Furthermore, the crystallinity of metal oxides can sometimes decrease due to the incorporation of impurities or the formation of defects; therefore, CAAC-OS can be considered a product of impurities or defects (oxygen vacancies, also known as V vacancies). O Metal oxides containing CAAC-OS have low oxygen vacancy and other oxygen vacancies. Therefore, metal oxides containing CAAC-OS have stable physical properties. Consequently, metal oxides containing CAAC-OS exhibit high heat resistance and high reliability.

[0434] In nc-OS, the atomic arrangement in tiny regions (e.g., regions above 1 nm and below 10 nm, particularly above 1 nm and below 3 nm) exhibits periodicity. Furthermore, no regularity in crystal orientation is observed between different nanocrystals in nc-OS. Therefore, no orientation is observed in the overall film. Thus, sometimes nc-OS is indistinguishable from a-like OS or amorphous oxide semiconductors in certain analytical methods.

[0435] Furthermore, indium gallium zinc oxide (hereinafter, IGZO), a metal oxide comprising indium, gallium, and zinc, sometimes exhibits a stable structure when composed of the aforementioned nanocrystals. In particular, IGZO tends to not readily undergo crystal growth in the atmosphere, and therefore is sometimes structurally more stable when formed from small crystals (e.g., the aforementioned nanocrystals) compared to when it is formed from large crystals (here, crystals a few millimeters or a few centimeters).

[0436] a-like OS is a metal oxide with a structure intermediate between nc-OS and amorphous oxide semiconductors. a-like OS contains voids or low-density regions. That is, a-like OS has lower crystallinity than nc-OS and CAAC-OS.

[0437] Oxide semiconductors (metal oxides) have various structures and properties. One embodiment of the present invention may also include two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, nc-OS, and CAAC-OS.

[0438] As described above, the light-emitting device of this embodiment is manufactured by cutting the shape of the region where the inorganic film extending to the light-emitting part is not provided. Therefore, even if the light-emitting device is held in a bent state for a long time or repeatedly bent, the generation and propagation of cracks can be suppressed. As a result, the bending resistance of the light-emitting device can be improved.

[0439] This embodiment can be appropriately combined with other embodiments. Furthermore, in this specification, where multiple structural examples are shown in one embodiment, these structural examples can be appropriately combined.

[0440] (Implementation Method 2)

[0441] In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to the accompanying drawings.

[0442] Examples of electronic devices include: television sets; monitors for computers, etc.; digital cameras; digital video cameras; digital photo frames; mobile phones (also called mobile phones or mobile phone devices); portable game consoles; portable information terminals; sound reproduction devices; and large game machines such as pinball machines.

[0443] An electronic device according to one aspect of the present invention includes a light-emitting device according to one aspect of the present invention in the display section, thus being able to withstand repeated bending and having high reliability.

[0444] By using a light-emitting device according to one aspect of the present invention, an electronic device with low cost, high productivity, and high reliability can be realized.

[0445] The display unit of the electronic device in this embodiment can display images with resolutions such as Full HD, 4K2K, 8K4K, 16K8K, or higher. Furthermore, the screen size of the display unit can be 20 inches or more diagonally, 30 inches or more, 50 inches or more, 60 inches or more, or 70 inches or more.

[0446] Furthermore, since the electronic device of one aspect of the present invention is flexible, it can also be assembled along the curved surfaces of the inner or outer walls of a house or high-rise building, or the interior or exterior decoration of a car.

[0447] Furthermore, an electronic device according to one aspect of the present invention may also include a secondary battery, which is preferably charged by contactless power transmission.

[0448] Examples of secondary batteries include lithium-ion batteries such as lithium polymer batteries (lithium-ion polymer batteries) that utilize gel-like electrolytes, nickel-metal hydride batteries, nickel-cadmium batteries, organic free radical batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, and silver-zinc batteries.

[0449] An electronic device according to one aspect of the present invention may also include an antenna. By receiving signals through the antenna, images or information can be displayed on a display unit. Furthermore, when the electronic device includes both an antenna and a secondary battery, the antenna can be used for contactless power transmission.

[0450] The electronic device in this embodiment may also include a sensor (which has the function of measuring factors such as force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation).

[0451] The electronic device of this embodiment can have various functions. For example, it can have the following functions: displaying various information (static images, dynamic images, text images, etc.) on the display unit; touch panel function; displaying calendar, date, or time, etc.; executing various software (programs); wireless communication function; reading programs or data stored in the storage medium; etc.

[0452] Figure 23A An example of a television device is shown. In the television device 7100, a display unit 7000 is assembled in a housing 7101. Here is shown the structure in which the housing 7101 is supported by a bracket 7103.

[0453] A light-emitting device according to one aspect of the present invention can be applied to the display unit 7000.

[0454] It can be operated using the operating switch provided in the housing 7101 or the separately provided remote control 7111. Figure 23A The operation of the television device 7100 shown is illustrated. Alternatively, a touch sensor may be provided in the display unit 7000, allowing operation of the television device 7100 by touching the display unit 7000 with a finger or similar object. A display unit for displaying data output from the remote control 7111 may be provided in the remote control 7111. Channel and volume controls can be performed using the operation keys or touch panel provided in the remote control 7111, and the images displayed on the display unit 7000 can also be operated.

[0455] Furthermore, the television device 7100 employs a structure including a receiver and a modem. It can receive general television broadcasts using the receiver. Moreover, by connecting the television device to a wired or wireless communication network via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication can be performed.

[0456] Figure 23B An example of a notebook computer is shown. The notebook computer 7200 includes a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is assembled in the casing 7211.

[0457] A light-emitting device according to one aspect of the present invention can be applied to the display unit 7000.

[0458] Figure 23C and Figure 23D Here is an example of digital signage.

[0459] Figure 23C The digital sign 7300 shown includes a housing 7301, a display unit 7000, and a speaker 7303. It may also include LEDs, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0460] Figure 23D A digital sign 7400 is shown mounted on a cylindrical column 7401. The digital sign 7400 includes a display section 7000 disposed along the curved surface of the column 7401.

[0461] exist Figure 23C and Figure 23D In this invention, a light-emitting device according to one aspect can be applied to the display unit 7000.

[0462] The larger the display unit (7000), the more information it can provide at once. A larger display unit (7000) is also more likely to attract attention, which can improve the effectiveness of advertising.

[0463] By using a touch panel in the display unit 7000, not only can static or dynamic images be displayed on the display unit 7000, but users can also operate it intuitively, making it preferable. Furthermore, when used to provide information such as route information or traffic information, intuitive operation enhances ease of use.

[0464] like Figure 23C and Figure 23DAs shown, digital signage 7300 or digital signage 7400 preferably connects wirelessly with information terminal devices 7311 or 7411, such as smartphones carried by the user. For example, advertising information displayed on display unit 7000 can be displayed on the screen of information terminal device 7311 or information terminal device 7411. Furthermore, the display on display unit 7000 can be switched by operating information terminal device 7311 or information terminal device 7411.

[0465] Furthermore, the game can be executed on the digital signage 7300 or 7400 using the screen of information terminal device 7311 or 7411 as the operating unit (controller). Thus, multiple users can participate in the game simultaneously and enjoy the experience.

[0466] Figures 24A to 24F An example of a portable information terminal having a flexible display unit 7001 is shown.

[0467] The display unit 7001 is manufactured using a light-emitting device according to one aspect of the present invention. For example, a light-emitting device capable of being bent with a radius of curvature of 0.01 mm or more and 150 mm or less can be used. The display unit 7001 may also be equipped with a touch sensor, allowing operation of a portable information terminal by touching the display unit 7001 with a finger or the like.

[0468] Figures 24A to 24C An example of a foldable portable information terminal is shown. Figure 24A Portable information terminal 7600 in unfolded state. Figure 24B A portable information terminal 7600 illustrates the intermediate states as it transitions from one state to another, namely an unfolded state and a folded state. Figure 24C The portable information terminal 7600 is shown in its folded state. The portable information terminal 7600 is highly portable in its folded state, and offers excellent visibility when unfolded due to its large, seamlessly integrated display area.

[0469] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending two housings 7601 together via hinges 7602, the portable information terminal 7600 can be reversibly changed from an unfolded state to a folded state.

[0470] Figure 24D and Figure 24E An example of a foldable portable information terminal is shown. Figure 24D A portable information terminal 7650 is shown folded in such a way that the display 7001 is located on the inside. Figure 24EA portable information terminal 7650 is shown, which folds with the display unit 7001 facing outwards. The portable information terminal 7650 has a display unit 7001 and a non-display unit 7651. When the portable information terminal 7650 is not in use, the display unit 7001 is folded inwards, thereby preventing the display unit 7001 from getting dirty or damaged.

[0471] Figure 24F An example of a watch-type portable information terminal is shown. The portable information terminal 7800 includes a watch strap 7801, a display unit 7001, input / output terminals 7802, operation buttons 7803, etc. The watch strap 7801 serves as the housing. The portable information terminal 7800 may be equipped with a flexible battery 7805. For example, the battery 7805 may be configured to overlap with the display unit 7001 or the watch strap 7801.

[0472] The watch strap 7801, display unit 7001, and battery 7805 are flexible. Therefore, the portable information terminal 7800 can be easily bent into a desired shape.

[0473] In addition to time setting, the operation button 7803 can also function as a power switch, a wireless communication switch, a silent mode switch, and a power-saving mode switch. For example, the functions of the operation button 7803 can be freely configured using the operating system integrated into the portable information terminal 7800.

[0474] The application can be launched by touching the icon 7804 displayed on the display unit 7001 with a finger or the like.

[0475] In addition, the portable information terminal 7800 can perform short-range wireless communication according to communication standards. For example, it can make hands-free calls by communicating with a headset that can perform wireless communication.

[0476] Furthermore, the portable information terminal 7800 may also include an input / output terminal 7802. When the portable information terminal 7800 includes the input / output terminal 7802, data can be exchanged directly with other information terminals via a connector. Additionally, charging can also be performed via the input / output terminal 7802. Furthermore, the charging operation of the portable information terminal illustrated in this embodiment can also be performed using contactless power transmission, without using the input / output terminal.

[0477] Figure 25A Showing the exterior of the car 9700. Figure 25BThe image shows the driver's seat of a car 9700. The car 9700 includes a body 9701, wheels 9702, a windshield 9703, lights 9704, fog lights 9705, etc. A light-emitting device according to one aspect of the present invention can be used in the display section of the car 9700, etc. For example, it can be used... Figure 25B The display units 9710 to 9715 shown are provided with a light-emitting device according to one aspect of the present invention. Alternatively, a light-emitting device according to one aspect of the present invention may also be used on the lamp 9704 or the fog lamp 9705.

[0478] Display units 9710 and 9711 are display devices installed on the windshield of an automobile. By using conductive materials with light transmittance to manufacture the electrodes and wiring, the light-emitting device of one aspect of the present invention can be in a so-called see-through state, where one can see the other side. If display units 9710 or 9711 are in a see-through state, they will not obstruct the view when driving the automobile 9700. Therefore, the light-emitting device of one aspect of the present invention can be installed on the windshield of the automobile 9700. In addition, when using transistors to drive the light-emitting device, it is preferable to use transparent transistors such as organic transistors using organic semiconductor materials or transistors using oxide semiconductor materials.

[0479] Display unit 9712 is a display device installed on the pillar. For example, by displaying an image from an imaging unit installed on the vehicle body on display unit 9712, the field of vision obstructed by the pillar can be compensated. Display unit 9713 is a display device installed on the dashboard. For example, by displaying an image from an imaging unit installed on the vehicle body on display unit 9713, the field of vision obstructed by the dashboard can be compensated. That is, by displaying an image from an imaging unit installed on the exterior of the vehicle, blind spots can be filled, thereby improving safety. In addition, by displaying images that compensate for areas that cannot be seen, safety can be confirmed more naturally and comfortably.

[0480] in addition, Figure 25C The illustration shows a car interior with a long bench seat serving as both the driver's and passenger's seats. Display unit 9721 is a display device located in the door section. For example, by displaying images captured by an imaging unit installed in the vehicle body on display unit 9721, obstructed views by the door can be compensated for. Display unit 9722 is a display device located on the steering wheel. Display unit 9723 is a display device located in the center of the long bench seat. Note that by placing the display device on the seat or backrest and using the heat from the display device as a heat source, the display device can be used as a seat heater.

[0481] Display units 9714, 9715, or 9722 can provide navigation information, speedometer, tachometer, mileage, fuel level, gear shift indicator, air conditioning settings, and various other information. Furthermore, the user can appropriately change the displayed content and arrangement of the displays. Display units 9710 to 9713, 9721, and 9723 can also display the aforementioned information. Display units 9710 to 9715, 9721 to 9723 can also be used as lighting devices. Additionally, display units 9710 to 9715, 9721 to 9723 can also be used as heating devices.

[0482] This implementation method can be appropriately combined with other implementation methods.

[0483] [Symbol Explanation]

[0484] EP: Light-emitting device, EP1: Light-emitting device, EP2: Light-emitting device, EP3: Light-emitting device, EP4: Light-emitting device, 10A: Light-emitting device, 10B: Light-emitting device, 11: Supporting substrate, 12: Metal oxide layer, 13: Resin layer, 14: Metal layer, 15: Oxide insulating layer, 16: Metal layer, 20: Light-emitting, 21: Substrate, 22: Adhesive layer, 23: Substrate, 24: Adhesive layer, 31: Inorganic insulating layer, 32: Insulating layer, 33: Inorganic insulating layer, 34: Insulating layer, 35: Organic insulating layer, 36: Inorganic insulating layer, 37: Separator, 39: Organic insulating layer, 40: Transistor, 50: Region, 50a: Region, 50A: Region, 50b: Region, 50B: Region 50c: Area, 50d: Area, 51: Area, 52: Area, 52A: Area, 52B: Area, 55: Large panel, 57a: Laser, 57b: Laser, 60: Light-emitting element, 61: Electrode, 62: EL layer, 63: Electrode, 64: Inorganic insulating layer, 65: Appliance, 66: Disconnecting wire, 69: Protective layer, 69a: Inorganic insulating layer, 69b: Organic insulating layer, 69c: Inorganic insulating layer, 70: Transistor, 71: Conductive layer, 73: Metal oxide layer, 75: Conductive layer, 77a: Conductive layer, 77b: Conductive layer, 80: Transistor, 81: Conductive layer, 83: Metal oxide layer, 83i: Channel forming region, 83n: Low resistance region, 85: Conductive layer, 87 a: Conductive layer, 87b: Conductive layer, 91: Support substrate, 92: Metal oxide layer, 93: Resin layer, 94: Metal layer, 95: Oxide insulating layer, 97: Inorganic insulating layer, 98: Adhesive layer, 99: Organic insulating layer, 100A: Light-emitting device, 100B: Light-emitting device, 100C: Light-emitting device, 100D: Light-emitting device, 381: Light-emitting part, 382: Circuit, 383: External connection terminal, 384: Wiring part, 385: Conductive layer, 386: Connector, 387: Conductive layer, 7000: Display part, 7001: Display part, 7100: Television unit, 7101: Housing, 7103: Stand, 7111: Remote control, 7200: Notebook computer, 72 11: Housing; 7212: Keyboard; 7213: Pointing device; 7214: External connection port; 7300: Digital signage; 7301: Housing; 7303: Speaker; 7311: Information terminal equipment; 7400: Digital signage; 7401: Column; 7411: Information terminal equipment; 7600: Portable information terminal; 7601: Housing; 7602: Hinge; 7650: Portable information terminal; 7651: Non-display unit; 7800: Portable information terminal; 7801: Watch strap; 7802: Input / output terminal; 7803: Operation button; 7804: Icon; 7805: Battery; 9700: Automobile; 9701: Vehicle body; 9702: Wheel; 9703: Windshield.9704: Light; 9705: Fog light; 9710: Display unit; 9711: Display unit; 9712: Display unit; 9713: Display unit; 9714: Display unit; 9715: Display unit; 9721: Display unit; 9722: Display unit; 9723: Display unit.

Claims

1. A light-emitting device, comprising: First substrate; The light-emitting portion on the first substrate; The second substrate on the light-emitting part; First area; as well as Second area, The first region includes the first end of the light-emitting device. The second region includes the second end of the light-emitting device. The first end of the first substrate and the first end of the second substrate overlap each other at the first end of the light-emitting device. The second end of the first substrate and the second end of the second substrate overlap each other at the second end of the light-emitting device. No inorganic film extending from the light-emitting portion is provided in the first region and the second region. The light-emitting part is located between the first region and the second region. Furthermore, the light-emitting part, the first region, and the second region are flexible.

2. The light-emitting device according to claim 1, in, The light-emitting device is capable of bending along a line that passes through a portion of the light-emitting part, a portion of the first region, and a portion of the second region.

3. The light-emitting device according to claim 1 or 2, further comprising: External connection terminals; as well as Wiring Department The wiring portion is located between the light-emitting portion and the external connection terminal. No inorganic film extending from the wiring portion is provided in the first region and the second region. The wiring section is located between the first region and the second region. Furthermore, the wiring section is flexible.

4. The light-emitting device according to claim 1 or 2, further comprising: External connection terminals; Wiring Department; Third region; as well as Fourth area, The third region includes the third end of the light-emitting device. The fourth region includes the fourth end of the light-emitting device. In the third and fourth regions, no inorganic film extending from the wiring portion is provided. The wiring section is located between the third region and the fourth region. Furthermore, the wiring section, the third region, and the fourth region are flexible.

5. The light-emitting device according to claim 4, in, The light-emitting device is capable of bending along a line that passes through a portion of the wiring section, a portion of the third region, and a portion of the fourth region.

6. A flexible light-emitting device, comprising: First substrate; Light-emitting elements; First inorganic insulating layer; Second inorganic insulating layer; First organic insulating layer; as well as Second substrate, The first inorganic insulating layer is located on the first substrate. The first organic insulating layer is on top of the first inorganic insulating layer. The light-emitting element is located on the first inorganic insulating layer, separated by the first organic insulating layer. The second inorganic insulating layer is on the light-emitting element. The second substrate is on the second inorganic insulating layer. The ends of the first inorganic insulating layer and the second inorganic insulating layer are both inside the end of the first organic insulating layer. The end of the first organic insulating layer is exposed on the side of the flexible light-emitting device. Furthermore, the ends of the first substrate and the ends of the second substrate overlap each other on the side of the flexible light-emitting device.

7. The flexible light-emitting device according to claim 6, in, On the outer side of the end of the light-emitting element, the first inorganic insulating layer and the second inorganic insulating layer are in contact with each other.

8. The flexible light-emitting device according to claim 7, in, The first organic insulating layer includes an opening on the outer side of the end of the light-emitting element. Furthermore, the first inorganic insulating layer and the second inorganic insulating layer are in contact with each other in the opening.

9. The flexible light-emitting device according to claim 6, further comprising: Second organic insulating layer, The first organic insulating layer comprises a material different from that of the second organic insulating layer. The first organic insulating layer is on top of the second organic insulating layer. The second organic insulating layer covers the end of the first inorganic insulating layer. Furthermore, the end of the second organic insulating layer is exposed on the side of the flexible light-emitting device.

10. A method for manufacturing a light-emitting device, comprising manufacturing a plurality of light-emitting devices and dividing the plurality of light-emitting devices into individual light-emitting devices, comprising: A release layer is formed on the first substrate; A first inorganic insulating layer is formed on the peeling layer; A first opening is formed in the first inorganic insulating layer; A first organic insulating layer is formed on the first inorganic insulating layer; A light-emitting element is formed on the first organic insulating layer; A second inorganic insulating layer is formed on the light-emitting element; A second substrate is bonded onto the second inorganic insulating layer; Separate the first substrate from the first inorganic insulating layer; The third substrate is bonded to the second substrate by means of a third substrate being overlapped with the first inorganic insulating layer in between; as well as The plurality of light-emitting devices are divided into individual light-emitting devices in such a way that the first opening is included in the segmented portion.

11. The method for manufacturing the light-emitting device according to claim 10, in, The first organic insulating layer forms a second opening inside the first opening. Furthermore, the second inorganic insulating layer is formed inside the second opening.

12. The method for manufacturing the light-emitting device according to claim 10, in, The release layer comprises a metal oxide layer and a resin layer on the metal oxide layer.

13. The method for manufacturing the light-emitting device according to claim 10, in, The release layer includes a resin layer.

14. The method for manufacturing the light-emitting device according to claim 10, in, The release layer comprises a metal layer and an oxide insulating layer on the metal layer. The metal layer includes a third opening that overlaps with the first opening. The oxide insulating layer includes a fourth opening that overlaps with both the first opening and the third opening. Furthermore, in the portions where the first opening, the third opening, and the fourth opening overlap, the first substrate and the first organic insulating layer are in contact with each other.

15. The method for manufacturing the light-emitting device according to claim 10, in, A second organic insulating layer is formed using a different material than the first organic insulating layer before the first organic insulating layer is formed. The release layer comprises a metal layer and an oxide insulating layer on the metal layer. The metal layer includes a third opening that overlaps with the first opening. The oxide insulating layer includes a fourth opening that overlaps with both the first opening and the third opening. Furthermore, the second organic insulating layer contacts the first substrate through the first opening, the third opening, and the fourth opening.

16. The method for manufacturing the light-emitting device according to claim 10, in, The release layer includes a first metal layer, an oxide insulating layer on the first metal layer, and a second metal layer on the oxide insulating layer. Furthermore, the first opening overlaps with the second metal layer.

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