Substrate support frame, substrate processing device and substrate processing system

Abstract

The present invention relates to a substrate support frame of a substrate processing device, a substrate processing device and a substrate processing system. The present invention discloses a substrate support frame of a substrate processing device, comprising: one or more electrostatic suction cups, which are mounted on the substrate and adsorb the substrate by electrostatic force; a sealing part, which is combined with the electrostatic suction cup to prevent the electrostatic suction cup from being exposed to the upper side when the substrate is mounted; wherein the sealing part comprises: one or more outer contour sealing parts, which are detachably arranged on the electrostatic suction cup along the edge of the overall right-angled quadrilateral formed by the one or more electrostatic suction cups to form a right-angled quadrilateral; one or more center sealing parts, which are combined with the electrostatic suction cup at a position corresponding to between two right-angled quadrilateral substrates to divide a pair of support areas that respectively support the two right-angled quadrilateral substrates; and one or more connecting sealing parts, which connect the center sealing part and the outer contour sealing part.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, and more particularly to a substrate supporting frame of a substrate processing device for performing substrate processing such as etching and deposition on a substrate, a substrate processing device having the same, and a substrate processing system. Background Art

[0002] Generally, a substrate processing apparatus includes a process chamber and a substrate support frame. The process chamber forms a processing space for processing a substrate, and the substrate support frame is disposed in the process chamber to support the substrate.

[0003] Then, the substrate processing apparatus is provided with a gas supply unit such as a shower head, an exhaust system for controlling pressure and exhausting gas, and the like according to the type and method of substrate processing.

[0004] On the other hand, when processing a substrate, if the substrate processing is performed under a vacuum pressure, an electrostatic chuck is provided to adsorb and fix the substrate by electrostatic force.

[0005] Generally, there are sixth, seventh, and eighth generations of substrate processing apparatuses having the structure as described above, which are enlarged in size based on the size of the processed substrate and optimized in size and scheme according to the increased substrate specifications.

[0006] However, the substrate processing apparatus optimized for each size as described above cannot be applied to processing substrates of other specifications (i.e., sizes). Therefore, in order to process substrates of different sizes, the substrate processing apparatus should be rearranged according to the size, which increases the investment cost. Summary of the invention

[0007] (Problem to be solved)

[0008] The object of the present invention is to provide a substrate support frame, a substrate processing device and a substrate processing system, which can perform substrate processing on two rectangular substrates simultaneously, thereby greatly improving productivity to solve the above-mentioned problems.

[0009] (Methods of solving the problem)

[0010] The present invention is proposed to achieve the purpose of the present invention as described above. The present invention discloses a substrate support frame of a substrate processing device, which is a substrate support frame 130 of a substrate processing device 50 including a process chamber 100 and a substrate support frame 130. The process chamber 100 forms a processing space S, and the processing space S is used to perform substrate processing on two rectangular quadrilateral substrates 1 introduced from the outside. The substrate support frame 130 is arranged in the process chamber 100 to support the two rectangular quadrilateral substrates 1, and includes: one or more electrostatic suction cups 200, which are installed with the substrate 1 and adsorb the substrate 1 through electrostatic force; a sealing portion, which is combined with the electrostatic suction cup 200, To prevent the electrostatic suction cup 200 from being exposed to the upper side when the substrate 1 is installed; wherein the sealing portion includes: one or more outer contour sealing components 250, which are detachably arranged on the electrostatic suction cup 200 along the edge of the overall rectangular shape formed by the one or more electrostatic suction cups 200 to form a rectangular shape; one or more center sealing components 270, which are combined with the electrostatic suction cup 200 at a position corresponding to the position between the two rectangular substrates 1 to divide a pair of supporting areas A1 and A2 that respectively support the two rectangular substrates 1; and one or more connecting sealing components 300, which connect the center sealing component 270 and the outer contour sealing component 250.

[0011] The connection sealing member 300 may include a first overlapping portion 310 that vertically overlaps with the end portion of the central sealing member 270 at one end, and a second overlapping portion 320 that vertically overlaps with the outer sealing member 250 at the other end.

[0012] The first overlapping portion 310 includes more than one first overlapping part 311, and the first overlapping part 311 is extended toward the end direction to overlap in the up-down direction at the joint part with the central sealing part 270; wherein the end part of the central sealing part 270 can form a first corresponding overlapping part 271, and the first corresponding overlapping part 271 overlaps with the first overlapping part 311 of the first overlapping portion 310 in the up-down direction.

[0013] An alignment pin 390 for aligning the combined portion where the first overlapping portion 310 and the center sealing component 270 are combined with each other is inserted into the alignment hole 340. When the combined portion is observed from the upper side, the alignment pin 390 includes a boundary line where the first overlapping portion 310 and the center sealing component 270 are connected, so that the alignment hole 340 can be formed in the upward and downward directions.

[0014] The second overlapping portion 320 includes one or more second overlapping parts 321, which are extended toward the end direction to overlap in the up-down direction at the combined part with the outer contour sealing part 250; the outer contour sealing part 250 can form a second corresponding overlapping part 253, and the second corresponding overlapping part 253 overlaps in the up-down direction with the second overlapping part 321 of the second overlapping portion 320 at the combined part with the second overlapping portion 320.

[0015] The second overlapping portion 320 may include an insertion portion 330 inserted inwardly of the side surface 259 of the outer shell sealing member 250 .

[0016] The width of the first overlapping portion 310 is the same as that of the central sealing part 270, and the insertion part 330 may include an extension part 350, which forms a width larger than the width of the first overlapping portion 310 and extends in one direction in the width direction to form a continuous side with the side 259 of the outer contour sealing part 250 when combined with the outer contour sealing part 250.

[0017] The extension part 350 extends toward the end direction and forms more than one extension overlapping part 351 to overlap in the up-down direction at the combined part with the outer profile sealing part 250; the outer profile sealing part 250 can form a corresponding extension overlapping part 254, and the corresponding extension overlapping part 254 overlaps in the up-down direction with the extension overlapping part 351 of the extension part 350 at the combined part with the extension part 350.

[0018] The electrostatic suction cup 200 may include: a physically separated substrate 210; a first insulating layer 220 formed on the substrate 210; a conductive layer 230 formed on the first insulating layer 220 corresponding to a pair of supporting areas A1 and A2, and connected to a DC power supply to generate an electrostatic force by applying a power supply; and a second insulating layer 240 formed after the conductive layer 230 is formed.

[0019] The electrostatic chuck 200 may be provided in a pair, corresponding to a pair of the supporting areas A1 and A2 respectively.

[0020] The present invention also discloses a substrate processing device, including: a process chamber 100, forming a processing space S, wherein the processing space S is used to perform substrate processing on two rectangular substrates 1 introduced from the outside; a substrate support frame, which is a substrate support frame 130 arranged in the process chamber 100 to support the two rectangular substrates 1, including the substrate support frame as described above.

[0021] The present invention also discloses a substrate processing system, comprising: a loading and locking module 10, which imports two substrates 1 from the outside through a transport robot 11; a handling module 20, which is combined with the loading and locking module 10, and exports the substrate 1 from the loading and locking module 10 through a handling robot 22; one or more process modules, which are combined with the handling module 20, and receive the substrate 1 through the handling robot 22 to perform substrate processing; wherein the process module is a substrate processing device 50 having the structure as described above.

[0022] (Effects of the Invention)

[0023] The substrate support frame, substrate processing device and substrate processing system of the present invention have the following advantages: when supporting two rectangular substrates, a central sealing component is added to prevent the top of the electrostatic suction cup from being exposed to the upper side between the two substrates, thereby preventing the electrostatic suction cup from being exposed to the upper side, thereby preventing the electrostatic suction cup from being damaged, and the substrate processing can be performed stably.

[0024] In addition, the substrate support frame, substrate processing device and substrate processing system of the present invention have the following advantages: they also include a connecting sealing component. When connecting the central sealing component and the outer sealing component, the central sealing component and the outer sealing component are respectively connected by the connecting sealing component through a step structure to assist in connecting the central sealing component and the outer sealing component, thereby being able to connect the central sealing component and the outer sealing component more stably and firmly.

[0025] Furthermore, the substrate support frame, substrate processing device and substrate processing system of the present invention have the following advantages: the substrate processing device that processes the substrate before the substrate is divided into two pieces through simple deformation can perform substrate processing on the rectangular substrate divided into two pieces at one time, thereby maximizing the reuse of existing equipment, and even if the substrate to be processed is divided, the increased equipment investment cost for processing the divided substrate can be minimized. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A conceptual diagram showing an example of a substrate processing system according to the present invention.

[0027] Figure 2 It is shown Figure 1 A plan view of an example of a substrate processing device of a substrate processing system.

[0028] Figure 3 yes Figure 2 Vertical cross-section along the II-II direction.

[0029] Figure 4 Yes Figure 2 Enlarged floor plan of Section A.

[0030] Figure 5 It is shown Figure 3 An exploded perspective view of a sealing auxiliary component and the parts combined therewith.

[0031] Figure 6a and Figure 6b They are Figure 5 Enlarged view of parts B and C.

[0032] Figure 7 yes Figure 2 Vertical cross-section along the III-III direction.

[0033] Figure 8 FIG. 1 is a vertical cross-sectional view showing a substrate processing apparatus according to a second embodiment of the present invention.

[0034] Fig. 9 It is shown in Figure 8 Zhongyu Figure 2 Part A corresponds to an enlarged vertical cross-sectional view of the portion.

[0035] Fig.10a and Fig.10b They are shown respectively Fig. 9 An enlarged vertical cross-sectional view of a modified example of an embodiment of the present invention.

[0036] (Explanation of Reference Numerals)

[0037] 10: Substrate 100: Substrate processing device

[0038] 130: substrate support frame 200: electrostatic chuck

[0039] 250: Outer seal component 270: Center seal component

[0040] 300: Connecting sealing parts DETAILED DESCRIPTION

[0041] Hereinafter, a substrate supporting frame of a substrate processing apparatus, a substrate processing apparatus, and a substrate processing system according to the present invention will be described with reference to the accompanying drawings.

[0042] First, the substrate processing system of the present invention is characterized in that substrate processing is performed at one time on two rectangular quadrilateral substrates 1 divided into two sizes.

[0043] For example, Figure 1 As shown, the substrate processing system of the present invention may include: a loading and locking module 10, which imports two substrates 1 from the outside through a transport robot 11; a transport module 20, which is combined with the loading and locking module 10, and exports the substrate 1 from the loading and locking module 10 through a transport robot 22; and one or more process modules, which are combined with the transport module 20, and receive the substrate 1 through the transport robot 22 to perform substrate processing.

[0044] Here, gate valves 31 , 32 , 41 may be provided in the respective modules for mutual isolation.

[0045] The load lock module 10 is a structure for introducing two substrates 1 from the outside by the transfer robot 11 and may have various structures.

[0046] For example, the loading and locking module 10 may be constructed as follows: two substrates 1 are introduced from the outside through the transport robot 11 under atmospheric pressure, and then in order to transfer the substrates to the handling module 20, the pressure is reduced to a pre-set pressure while aligning the horizontal positions of the two rectangular substrates 1 respectively.

[0047] The transport module 20 is a structure that is combined with the loading and locking module 10 and transfers or exports the substrate 1 to the loading and locking module 10 and the process module through the transport robot 22. It includes a transport chamber 21 and a transport robot 22 arranged in the transport chamber 21, and can have various structures.

[0048] The process module is a substrate processing apparatus 50 of the present invention that performs a substrate processing process such as etching and deposition on the substrate 1 introduced by the transfer robot 22 , and may have various structures according to the type of substrate processing.

[0049] The substrate processing apparatus 50 of the present invention will be described below.

[0050] like Figures 1 to 3 As shown, the substrate processing device of the present invention includes: a process chamber 100, forming a processing space S, wherein the processing space S is used to perform substrate processing on two rectangular substrates 1 introduced from the outside; and a substrate support frame 130, which is arranged in the process chamber 100 to support the two rectangular substrates 1.

[0051] Here, the substrate processing may be various processes such as a deposition process for forming a thin film on the surface of the substrate and an etching process for performing etching.

[0052] Then, the substrate processing objects of etching, deposition, etc. can all be the objects of substrate processing, such as substrates for LCD panels, OLED substrates, etc.

[0053] The process chamber 100 may include a chamber body 110 and an upper cover plate 120 , and the chamber body 110 and the upper cover plate 120 may be detachably combined with each other to form a processing space S.

[0054] The chamber body 110 may have various structures according to design, and at least one gate 111 is formed. The gate 111 is opened and closed by a gate valve (not shown) to allow the substrate 1 to enter and exit.

[0055] On the other hand, the process chamber 100 may be provided with devices for performing vacuum processing processes, such as a gas supply unit 140, a substrate support frame 130, an exhaust pipe (not shown), etc. The gas supply unit 140 receives processing gas from a gas supply device (not shown) and sprays it into the processing space S. The substrate support frame 130 is mounted with a substrate 1. The exhaust pipe is connected to an exhaust system for adjusting the pressure in the processing space S and exhausting the gas.

[0056] The substrate support frame 130 may be provided with a lower electrode (not shown) that applies power to generate a reaction for vacuum processing in the processing space S, such as forming plasma for performing a process.

[0057] Here, the lower electrode can be powered in various forms according to the power application method, such as grounding the chamber body 110 and the gas supply part 140 and applying one or two RF power supplies, or grounding the lower electrode and applying RF power to the chamber body 110 and the gas supply part 140, or applying a first RF power to the lower electrode and applying a second RF power to the chamber body 110 and the gas supply part 140, etc.

[0058] On the other hand, the substrate support frame 130 can be provided with a plurality of lifting pins (not shown) and a lifting device, etc., wherein the plurality of lifting pins lift the substrate 1 up and down so that the substrate 1 can be exported by a handling robot, etc., and the lifting device substrate is used to move the lifting pins up and down relative to the support frame 130.

[0059] Here, the lifting device may have various structures according to the lifting method of the substrate support frame 130 .

[0060] In addition, the substrate support frame 130 may further include a cooling plate 132 , which is coupled to a lower side of an electrostatic chuck 200 to be described later, to increase the temperature or cool the heat generated during the processing process, thereby processing the substrate by plasma.

[0061] The cooling plate 132 is a structure combined with the lower side of the electrostatic chuck 200 for cooling the electrostatic chuck 200, etc., and can realize various structures such as forming a cooling channel, and can have various structures, such as being integrated with the electrostatic chuck 200.

[0062] At the same time, the cooling plate 132 forms a channel for the flow of an insulating fluid for controlling the temperature.

[0063] In addition, the substrate support frame 130 can function as an electrode to apply one or more RF power supplies or ground the substrate 210, cooling plate 132, etc. of the electrostatic suction cup 200, and in order to insulate the electrostatic suction cup 200 from the chamber body 110, an insulating component 131 can also be set between the electrostatic suction cup 200 and the chamber body 110.

[0064] As described above, when the cooling plate 132 is provided, the insulating member 131 is preferably coupled to the lower side of the cooling plate 132 .

[0065] In addition, the substrate support frame 130 may further include a bottom plate (not shown) coupled to a lower side of the insulating member 131 and supported by a plurality of flanges 160 disposed on a bottom surface of the chamber body 110 .

[0066] In addition, the substrate support frame 130 is fixed in the process chamber 100 in the example shown, but it can also be disposed in the process chamber 100 to be movable up and down.

[0067] In addition, the substrate support frame 130 as the substrate support frame of the present invention is characterized by stably adsorbing, fixing and supporting two substrates 1, and can have various structures according to the physical separation structure including the electrostatic chuck 200.

[0068] As a first embodiment, Figure 2 and 3 As shown, the substrate support frame 130 may be constructed as an integrated structure including the electrostatic chuck 200 .

[0069] As a second embodiment, Figure 8 and Fig. 9 , Figure 10a to Figure 10b As shown, the substrate support frame 130 may be configured to separate only the electrostatic chuck 200 .

[0070] As a third embodiment, as Figure 8 and Fig. 9 , Figure 10a to Figure 10b In a modified example, the substrate support frame 130 may be configured such that the electrostatic chuck 200 and the cooling plate 132 coupled to the lower portion of the electrostatic chuck 200 are all physically separated.

[0071] On the other hand, the substrate support frame 130 according to the first to third embodiments described above should be prevented from being exposed to the upper side except for the surface supporting the substrate 1 in the electrostatic chuck 200 , thereby preventing arcing and the like.

[0072] Accordingly, the substrate support frame 130 needs to be provided with an outer shell sealing component made of a ceramic material. However, the existence of the outer shell sealing component increases the width between the two substrates 1 , which results in a problem of increasing the size of the process chamber 100 .

[0073] According to this, if Figures 2 to 10b As shown, the substrate support frame 130 of the present invention includes: one or more electrostatic chucks 200, which are mounted with substrates 1 and adsorb the substrates 1 by electrostatic force; and a sealing portion, which is combined with the electrostatic chuck 200, thereby preventing the electrostatic chuck 200 from being exposed to the upper side when the substrate 1 is mounted. In particular, the sealing portion includes: one or more outer contour sealing components 250, which are detachably arranged along the edge of the electrostatic chuck 200 to form a rectangular quadrilateral; and one or more center sealing components 270, which are combined with the electrostatic chuck 200 at a position corresponding to between two rectangular quadrilateral substrates 1 to divide a pair of supporting areas A1 and A2 that respectively support the two rectangular quadrilateral substrates 1.

[0074] like Figure 2 , Figure 3 , Figure 6a and Fig.10b As shown, the electrostatic suction cup 200 includes: a substrate 210, which has a planar shape of a right-angled quadrilateral and has a metal material; a first insulating layer 220, which is formed by spraying the substrate 210; a conductive layer 230, which is formed on the first insulating layer 220, is connected to a DC power supply, and generates an electrostatic force by applying a power supply; and a second insulating layer 240, which is formed by spraying on the conductive layer 230.

[0075] The substrate 210 is a planar rectangular shape and can be made of metal materials such as aluminum alloy, Ti and stainless steel (SUS or STS), and can function as a lower electrode of a power application portion when grounded or RF power is applied.

[0076] The first insulating layer 220 and the second insulating layer 240 may be made of various materials, and ceramic materials such as Al2O3, ZrO3, AlN and Y2O3 may be used as insulating materials to have a predetermined dielectric constant and thus function as an electrostatic chuck.

[0077] Here, the second insulating layer 240 forms a pair of supporting regions A1 and A2 for supporting two rectangular quadrilateral substrates 1 respectively.

[0078] Then, the second insulating layer 240 forming the pair of supporting areas A1, A2 may protrude to form a plurality of protrusions 241 to fill an insulating gas such as helium (He) between the bottom surface of the substrate 1 and the electrostatic suction cup 200 (i.e., the top of the electrostatic suction cup 200), thereby supporting the substrate 1 and controlling the temperature, and may form a barrier 242 that supports the bottom edge of the substrate 1 to prevent leakage of the insulating gas to the outside.

[0079] The conductor layer 230 is connected to a DC power source and generates electrostatic force together with the second insulating layer 24 to attract and fix the substrate 1 mounted on the second insulating layer 240 . A conductive material such as tungsten (W) may be used.

[0080] Then, the conductive layer 230 may be divided into a plurality of layers, thereby quickly generating an electrostatic force and preventing a voltage difference from occurring.

[0081] In particular, the conductor layer 230 may be separately formed to correspond to a pair of support areas A1 and A2, and may receive application of DC power through separate DC power sources or one DC power source.

[0082] Here, it is preferable that the DC power applied to the conductive layer 230 is individually controlled corresponding to each substrate 1 .

[0083] Specifically, the electrostatic chuck 200 may be formed separately or integrally with a pair of supporting areas A1 and A2 to form a conductive layer 230 that generates electrostatic force by applying power.

[0084] Meanwhile, in the supply of the insulating gas, the supply of the insulating gas may be controlled individually or integratedly corresponding to a pair of supporting areas A1 and A2.

[0085] The first insulating layer 220 , the conductive layer 230 , and the second insulating layer 240 may be formed by various methods, for example, by plasma spraying.

[0086] On the other hand, Figures 1 to 4 As shown, the electrostatic chuck 200 may form a step 202 at the edge, so that the outer sealing component 250 may be stably disposed.

[0087] The sealing portion is a structure that is coupled to the electrostatic chuck 200 to prevent the electrostatic chuck 200 from being exposed to the upper side when the substrate 1 is mounted, and may have various structures.

[0088] In particular, the sealing portion may include: one or more outer sealing components 250, which are detachably arranged along the edge of the electrostatic suction cup 200 to form a rectangular shape; one or more central sealing components 270, which are combined with the electrostatic suction cup 200 at a position corresponding to the position between the two rectangular substrates 1 to divide a pair of supporting areas A1 and A2 that respectively support the two rectangular substrates 1.

[0089] The outer sealing component 250 is a structure that is exposed to the upper side from the plasma-protected electrostatic suction cup 200 when the substrate 1 is installed on the substrate support frame 130 (i.e., the electrostatic suction cup 200), and is preferably composed of a ceramic material such as Al2O3, ZrO3, AlN and Y2O3, a material resistant to plasma, polycarbonate, polytetrafluoroethylene, etc.

[0090] In addition, the outer sealing member 250 may be composed of a plurality of members so as to be applicable to a large electrostatic chuck 200 , and may have various structures, such as the structure disclosed in Korean Patent Publication No. 10-2014-0060662.

[0091] On the other hand, Figure 3 , Figure 6a , Figure 7 and Figure 8 As shown, a side sealing component 280 may be further provided on the side of the substrate 210 to prevent the electrostatic chuck 200, the cooling plate 132, etc. from being damaged by plasma.

[0092] The side sealing member 280 is provided on the side of the substrate 210 to prevent the electrostatic chuck 200 from being exposed to the outside, and is preferably made of a plasma-resistant material such as a ceramic material such as Al2O3, ZrO3, AlN, and Y2O3, polycarbonate, polytetrafluoroethylene, etc.

[0093] In addition to the side sealing member 280, one or more auxiliary side sealing members 281, 282, etc. may be provided to prevent the electrostatic chuck 200 and the cooling plate 132 described later from being exposed to the side.

[0094] The auxiliary side sealing members 281 and 282 are structures for preventing the electrostatic chuck 200 and the cooling plate 132 described later from being exposed to the side, and may have various structures, such as being combined with or separated from the side sealing member 280, or being set in place of the side sealing member.

[0095] The center seal member 270 is a member that directly or indirectly connects the outer seal member 250 between the two rectangular substrates 1 to define a pair of support areas A1 and A2 that respectively support the two rectangular substrates 1 , and may have various structures.

[0096] In particular, the central sealing component 270 is a structure that is configured to divide a pair of supporting areas A1 and A2 that respectively support two rectangular substrates 1 to prevent the second insulating layer 240 (i.e., the electrostatic suction cup 200) from being exposed to plasma. It is preferably composed of a ceramic material such as Al2O3, ZrO3, AlN and Y2O3, a polycarbonate, a polytetrafluoroethylene, etc. that is a plasma-resistant material.

[0097] In addition, at least a portion of the central sealing member 270 may be formed integrally with the outer sealing member 250 .

[0098] In addition, it is preferred that at least a portion of the central sealing member 270 overlaps with the outer sealing member 250 in the vertical direction to prevent plasma from penetrating into the electrostatic chuck 200 at the boundary portion with the outer sealing member 250 .

[0099] Then, if Figure 6b As shown, preferably, the upper surface of the central sealing component 270 is the same as or lower than the height of the stopper 242 , so that the upper surface of the stopper 242 can support the bottom surface of the substrate 1 .

[0100] On the other hand, the electrostatic chuck 200 may form a groove portion 247 into which the central sealing member 270 is inserted, so as to dispose the central sealing member 270 .

[0101] At this time, the substrate 210 constituting the electrostatic chuck 200 may be recessed to correspond to the shape of the recessed portion 247 , so that the recessed portion 247 may be finally formed by spraying or the like.

[0102] In particular, the depth of the recessed portion 247 may be formed by the depth formed in the base material 210 for installing the outer shell sealing member 250 .

[0103] Then, considering the shape of the groove portion 247 , the conductive layer 230 is preferably formed separately to correspond to the pair of supporting areas A1 and A2 .

[0104] In addition, preferably, the central sealing member 270 is located between the stoppers 242 , and the stoppers 242 correspond to the inner sides of the rectangular substrate 1 facing each other.

[0105] Then, if Figure 2 , Figure 3 and Figure 6b As shown, the center sealing part 270 is preferably configured so that the edge of the substrate 1 extends toward the upper inner side of the center sealing part 270 when the center sealing part 270 is viewed in the upward and downward directions, so as to prevent plasma from invading the second insulating layer 240 adjacent to the center sealing part 270 when performing substrate processing.

[0106] By adding a central sealing component 270 having a structure as described above, the following advantages are achieved: in the structure of a substrate processing device for processing a substrate before being divided into two pieces, the substrate processing device for processing a substrate before being divided into two pieces can perform substrate processing on a rectangular substrate 1 divided into two pieces at one time by simple deformation (i.e., replacing the electrostatic suction cup).

[0107] On the other hand, since the center seal member 270 is provided between two substrates 1 , it is necessary to provide the center seal member 270 more accurately and stably.

[0108] According to this, if Figures 2 to 7 As shown, the substrate support frame of the present invention may further include one or more connecting sealing members 300 , wherein the connecting sealing members 300 connect the central sealing member 270 and the outer sealing member 250 to prevent the electrostatic chuck 200 from being exposed upward.

[0109] The connection seal member 300 is a structure for connecting the central seal member 270 and the outer seal member 250 and may have various structures. One connection seal member 300 may be provided at one end of the central seal member 270 or a pair may be provided at both ends.

[0110] For example, Figures 3 to 7 As shown, the connection sealing member 300 may include: a first overlapping portion 310 overlapping with the end portion of the central sealing member 270 in the vertical direction at one end; and a second overlapping portion 320 overlapping with the outer contour sealing member 250 in the vertical direction at the other end.

[0111] The first overlapping portion 310 is an end portion of the connection sealing member 300 that vertically overlaps with the end portion of the center sealing member 270 , and may have a structure that is stably combined with the center sealing member 270 .

[0112] For example, the first overlapping portion 310 may include more than one first overlapping portion 311, and the first overlapping portion 311 is formed to extend toward the end direction to overlap in the vertical direction at the joint portion with the central sealing member 270. At this time, the end portion of the central sealing member 270 may form a first corresponding overlapping portion 271 to overlap with the first overlapping portion 311 of the first overlapping portion 310 in the vertical direction.

[0113] like Figure 5 and Figure 7 As shown, for the first overlapping portion 311 of the first overlapping portion 310 and the first corresponding overlapping portion 271 of the central sealing member 270, any structure is applicable as long as it can overlap in the vertical direction, such as a step, a protrusion-groove combination, etc. For example, if it is a step form, the first overlapping portion 310 and the central sealing member 270 can have a vertical overlap according to the direction. Shape and shape.

[0114] On the other hand, the central sealing component 270 and the connecting sealing component 300 require precise alignment when connected to each other, and accordingly, it is preferred that the central sealing component 270 and the connecting sealing component 300 are aligned and connected to each other by an alignment pin 390 or the like.

[0115] Accordingly, an alignment pin 390 for aligning the combined portion where the first overlapping portion 310 and the center sealing component 270 are combined with each other is inserted into the alignment hole 340, and when the combined portion is observed from the upper side, it includes a boundary line where the first overlapping portion 310 and the center sealing component 270 are connected, and the alignment hole 340 can be formed in the upward and downward directions.

[0116] The alignment hole 340 is formed at a joint portion where the first overlapping portion 310 and the center sealing member 270 are joined together and into which the alignment pin 390 is inserted to join and align the first overlapping portion 310 and the center sealing member 270 . The alignment hole 340 is formed correspondingly to the shape of the alignment pin 390 .

[0117] Then, for the alignment pin 390, considering the possibility of using metal materials, a material that can withstand plasma is used, so that the alignment pin 390 can be protected from plasma, and a cover part 391 covering the head of the alignment pin 390 is inserted on the upper side; at this time, the upper end part of the alignment hole 340 can have an inner diameter corresponding to the outer diameter of the cover part 391, so that the cover part 391 can be inserted.

[0118] On the other hand, the alignment hole 340 is preferably formed at a position including a boundary line where the first overlapping portion 310 and the central sealing member 270 meet, so as to prevent plasma from invading through the boundary line area.

[0119] The second overlapping portion 320 , which is the other end portion of the connection sealing member 300 coupled to the outer casing sealing member 250 , may have a structure that is stably coupled to the outer casing sealing member 250 .

[0120] For example, the second overlapping portion 320 may include one or more second overlapping parts 321 , and the second overlapping parts 321 are formed while extending toward the distal end so as to overlap with the outer shell sealing member 250 in the up-down direction at the combined part.

[0121] At this time, the outer shell sealing member 250 may form a second corresponding overlapping portion 253 that overlaps the second overlapping portion 321 of the second overlapping portion 320 in an up-and-down direction at a portion where the second corresponding overlapping portion 253 is combined with the second overlapping portion 320 .

[0122] like Figure 5 and Figure 7 As shown, for the second overlapping portion 321 of the second overlapping portion 320 and the second corresponding overlapping portion 253 of the outer sealing member 250, any structure is applicable as long as it can overlap in the vertical direction, such as a step, a protrusion-groove combination, etc. For example, if it is a step form, the cross-sectional shape of the second overlapping portion 320 and the outer sealing member 250 can have a cross-sectional shape according to the combination direction. Shape and shape.

[0123] In addition, if Figure 4 , Figure 5 and Figure 7 As shown, the second overlapping portion 320 may further include an inserting portion 330 inserted inwardly of the side surface 259 of the outer profile sealing member 250 .

[0124] The insertion portion 330 is a portion inserted inwardly at the side surface 259 of the outer shell sealing member 250 in the connection sealing member 300 (especially, in the second overlapping portion 320 ), and may have various structures according to the insertion structure.

[0125] Specifically, when the width of the first overlapping portion 310 is the same as the width of the central sealing part 270, the insertion portion 330 may include an extension portion 350, which is configured to have a width larger than the width of the first overlapping portion 310 and extends in at least one direction in the width direction to form a continuous side with the side 259 of the outer contour sealing part 250 when combined with the outer contour sealing part 250.

[0126] The extension portion 350 is a portion extending in at least one direction (especially, bidirectionally) in the width direction to form a continuous side surface with the side surface 259 of the outer shell sealing member 250 when combined with the outer shell sealing member 250 .

[0127] More specifically, by forming the extension portion 350 , the connection sealing member 300 may have a “T” shape in a plan view.

[0128] Then, the extending portion 350 may extend toward the distal end and form one or more extending overlapping portions 351 to overlap the extending portion 350 in the vertical direction at the joint portion with the outer shell sealing member 250 .

[0129] At this time, the outer shell sealing member 250 may form a corresponding extended overlap portion 254 which corresponds to the extended overlap portion 351 of the extended portion 350 at a combined portion with the extended portion 350 .

[0130] like Figure 5 and Figure 7 As shown, for the extended overlapping portion 351 of the extended portion 350 and the corresponding extended overlapping portion 254 of the outer profile sealing member 250, any structure can be applied as long as it can overlap in the vertical direction, such as a step, a protrusion-groove combination, etc. For example, if it is a step form, the cross-sectional shape of the extended portion 350 and the outer profile sealing member 250 can have a cross-sectional shape according to the combination direction. Shape and shape.

[0131] On the other hand, the connecting sealing component 300 is preferably made of the same material as the central sealing component 270 and the outer sealing component 250. The material includes plasma-resistant ceramic materials such as Al2O3, ZrO3, AlN and Y2O3, polycarbonate, polytetrafluoroethylene, etc.

[0132] On the other hand, as described above, the substrate support frame 130 can be implemented as follows according to at least a part of the physical structure: In the first embodiment, as Figure 2 and 3 As shown, the overall structure including the electrostatic chuck 200 is integrated; the second embodiment, as shown Figure 8 and Fig. 9 , Figure 10a to Figure 10b As shown, only the electrostatic chuck 200 is separated; the third embodiment, as shown Figure 8 and Fig. 9 , Figure 10a to Figure 10b In a modified example, the electrostatic chuck 200 and the cooling plate 132 coupled to the lower portion of the electrostatic chuck 200 are all physically separated.

[0133] Hereinafter, the structure of the substrate support frame 130 related to the central sealing member 270 will be described according to various embodiments.

[0134] First, if Figure 3 , Figure 6b As shown, the substrate support frame 130 of the first embodiment is integrally formed with the base 210 constituting the electrostatic chuck 200 and a central sealing member 270 may be provided at a boundary portion formed by a pair of supporting areas A1 and A2.

[0135] At this time, the center seal member 270 is disposed at a position corresponding to the boundary portion formed by the support areas A1 and A2.

[0136] Then, in order to stably install the central sealing member 270 , the substrate 210 of the electrostatic chuck 200 may further form a central sealing member installation groove 247 having a width equal to or greater than a horizontal width of the central sealing member 270 .

[0137] The central sealing member installation groove 247 is a groove formed in the base 210 of the electrostatic chuck 200 to stably install the central sealing member 270 , and may be formed to correspond to the longitudinal shape of the central sealing member 270 .

[0138] On the other hand, the first insulating layer 220 is formed on the substrate 210 of the electrostatic chuck 200 before the central sealing member 270 is disposed, or the central sealing member 270 can be disposed thereon after an auxiliary sealing member 410 having a size corresponding to the width of the central sealing member 270 is added.

[0139] The auxiliary sealing member 410 , which is a sealing member having a size corresponding to the width of the central sealing member 270 provided before the central sealing member 270 is provided, may have various structures.

[0140] In particular, as described above, the auxiliary sealing component 410 can be composed of a plasma-resistant material such as Al2O3, ZrO3, AlN and Y2O3, a ceramic material, polycarbonate, polytetrafluoroethylene, etc., in which case it can have a dielectric constant different from the dielectric constant of the central sealing component 270.

[0141] like Figure 8 and Fig. 9 As shown, the substrate support frames 130 of the second embodiment can contact the side surfaces of the electrostatic chuck 200 to form a state where the electrostatic chuck 200 is physically separated.

[0142] In this case, the side sealing member 280 described above does not need to be provided on the side contacting the adjacent electrostatic chuck 200 , but the central sealing member 270 may be provided just above the side contacted by the two separated electrostatic chucks 200 .

[0143] Then, if Fig. 9 As shown, the electrostatic chuck 200 has a shape corresponding to the length direction of the central sealing member 270 and a step 207 may be formed on the substrate 210 of the electrostatic chuck 200 to stably position the central sealing member 270 .

[0144] On the other hand, the first insulating layer 220 is formed on the substrate 210 of the electrostatic chuck 200 before the central sealing member 270 is disposed, or the central sealing member 270 can be disposed thereon after an auxiliary sealing member 410 having a size corresponding to the width of the central sealing member 270 is added.

[0145] The auxiliary sealing member 410 , which is a sealing member having a size corresponding to the width of the central sealing member 270 provided before the central sealing member 270 is provided, may have various structures.

[0146] In particular, as described above, the auxiliary sealing component 410 can be composed of a plasma-resistant material such as Al2O3, ZrO3, AlN and Y2O3, a ceramic material, polycarbonate, polytetrafluoroethylene, etc., in which case it can have a dielectric constant different from the dielectric constant of the central sealing component 270.

[0147] With the above-described structure, even if two electrostatic chucks 200 are provided, the horizontal length of the substrate support frame 130 can be shortened.

[0148] On the other hand, the cooling plate 132 coupled to the bottom surface of the electrostatic chuck 200 (ie, the bottom surface of the substrate 210 ) may be physically separated from each electrostatic chuck 200 or may be formed integrally with the electrostatic chuck 200 .

[0149] Here, in the case where the cooling plate 132 is formed integrally, the power applied to the cooling plate 132 is electrically connected to the substrate 210 of each electrostatic chuck 200 and can be flexibly used as a common electrode.

[0150] On the other hand, Fig.10a and Fig.10b As shown in FIG. 1 , as a third embodiment of the substrate support frame 130 , the central sealing member 270 may be directly or indirectly disposed above the cooling plate 132 in a state where the two electrostatic chucks 200 are completely separated.

[0151] That is, the central sealing member 270 is directly disposed on the cooling plate 132 between the sides of the two electrostatic chucks 200, or as Fig.10a and Fig.10b As shown, after adding an auxiliary sealing member 410 similar to the above, the central sealing member 270 can be arranged on this upper side.

[0152] Then, in Fig.10a In the case of the embodiment shown, plasma may be exposed between the central sealing member 270 and the side of the electrostatic chuck 200. To prevent this phenomenon, Fig.10b As shown, a step 209 is formed on the bottom surface of the substrate 210 of the electrostatic chuck 200 , and the auxiliary sealing member 410 may be extended toward the bottom surface of the substrate 210 of the electrostatic chuck 200 .

[0153] On the other hand, the substrate support frame 130 of the first to third embodiments is arranged along a rectangular quadrilateral (in Figure 2 In the embodiment, an outer contour sealing member 250 is provided at an edge of a rectangular quadrilateral (defined by two outermost contour lines) inside the process chamber 100 .

[0154] In particular, it is preferred that the outer shell sealing member 250 is formed integrally at a portion connected to the connection sealing member 300 to provide the connection sealing member 300 .

[0155] The substrate support frame 130 having the structure as described above can reduce the size of the substrate support frame 130 by providing the central sealing member 270 and the connecting sealing member 300 , thereby minimizing the size of the process chamber 100 .

[0156] In particular, a substrate processing system, especially a substrate processing device, that performs substrate processing on two substrates divided into two based on a single substrate can minimize or eliminate the need to deform an existing substrate processing system, especially a deformed substrate processing device, that is used to process a single substrate.

[0157] On the other hand, the substrate support frame of the present invention is suitable for Figure 1 The cluster type substrate processing system shown in the figure is applicable to any substrate processing system that can perform substrate processing on two substrates, such as an in-line type substrate processing system in which a loading locking module 10 for introducing the substrate 1 from the outside under atmospheric pressure and an unloading locking module (not shown) for discharging the substrate to the outside under atmospheric pressure after processing by a substrate processing device 50 are arranged in a row.

[0158] The above is only a part of the preferred embodiments that can be implemented by the present invention. It is well known that the scope of the present invention shall not be limited by the above embodiments. The technical ideas of the present invention described above and its fundamental technical ideas are all included in the scope of the present invention.

Claims

1. A substrate support frame of a substrate processing device, as a substrate support frame (130) of a substrate processing device (50) comprising a process chamber (100) and a substrate support frame (130), wherein the process chamber (100) forms a processing space (S), and the processing space (S) is used to perform substrate processing on two rectangular quadrilateral substrates (1) introduced from the outside, and the substrate support frame (130) is arranged in the process chamber (100) to support the two rectangular quadrilateral substrates (1), characterized in that: include: One or more electrostatic chucks (200) are used to mount the substrate (1) and to adsorb the substrate (1) by electrostatic force; a sealing portion, combined with the electrostatic chuck (200), so as to prevent the electrostatic chuck (200) from being exposed upward when the substrate (1) is mounted; Wherein, the sealing portion comprises: One or more outer sealing components (250) are detachably arranged on the electrostatic chuck (200) along the edges of the overall rectangular quadrilateral formed by the one or more electrostatic chucks (200) to form a rectangular quadrilateral; One or more central sealing components (270) are combined with the electrostatic chuck (200) at a position corresponding to between the two rectangular quadrilateral substrates (1) to define a pair of supporting areas (A1, A2) that respectively support the two rectangular quadrilateral substrates (1); One or more connecting sealing components (300) connecting the central sealing component (270) and the outer sealing component (250), The connection sealing component (300) comprises: A first overlapping portion (310) overlaps at one end with a terminal end portion of the central sealing component (270) in an up-down direction; The second overlapping portion (320) overlaps the outer sealing component (250) in the vertical direction at the other end.

2. The substrate support frame of the substrate processing device according to claim 1, characterized in that: The first overlapping portion (310) includes more than one first overlapping part (311), and the first overlapping part (311) is formed to extend toward the end direction so as to overlap with the central sealing component (270) in the vertical direction at the joint part; The end portion of the central sealing component (270) forms a first corresponding overlapping portion (271), and the first corresponding overlapping portion (271) overlaps with the first overlapping portion (311) of the first overlapping portion (310) in an up-down direction.

3. The substrate support frame of the substrate processing device according to claim 2, characterized in that: An alignment pin (390) for aligning the combined portion where the first overlapping portion (310) and the center sealing component (270) are combined with each other is inserted into the alignment hole (340). When the combined portion is observed from the upper side, it includes a boundary line where the first overlapping portion (310) and the center sealing component (270) are connected, forming the alignment hole (340) in the upward and downward directions.

4. The substrate support frame of the substrate processing device according to any one of claims 1 to 3, characterized in that: The second overlapping portion (320) includes more than one second overlapping part (321), and the second overlapping part (321) is formed to extend toward the end direction so as to overlap in the vertical direction at the joint part with the outer shell sealing component (250); The outer sealing component (250) forms a second corresponding overlapping portion (253), and the second corresponding overlapping portion (253) overlaps with the second overlapping portion (321) of the second overlapping portion (320) in the vertical direction at a combined portion with the second overlapping portion (320).

5. The substrate support frame of the substrate processing device according to claim 4, characterized in that: The second overlapping portion (320) includes an insertion portion (330) which is inserted inwardly of a side surface (259) of the outer shell sealing member (250).

6. The substrate support frame of the substrate processing device according to claim 5, characterized in that: The width of the first overlapping portion (310) is the same as the width of the central sealing component (270), The insertion portion (330) includes an extension portion (350), which forms a width greater than the width of the first overlapping portion (310) and extends in one direction in the width direction to form a continuous side surface with the side surface (259) of the outer shell sealing component (250) when combined with the outer shell sealing component (250).

7. The substrate support frame of the substrate processing device according to claim 6, characterized in that: The extending portion (350) extends toward the end direction and forms more than one extending overlapping portion (351) so as to overlap with the connecting portion of the outer shell sealing component (250) in the vertical direction; The outer profile sealing component (250) forms a corresponding extended overlapping portion (254), and the corresponding extended overlapping portion (254) overlaps the extended overlapping portion (351) of the extended portion (350) in the up-down direction at a combined portion with the extended portion (350).

8. The substrate support frame of the substrate processing device according to any one of claims 1 to 3, characterized in that: The electrostatic chuck (200) comprises: A physically separated substrate (210); A first insulating layer (220) formed on the substrate (210); A conductor layer (230) is formed on the first insulating layer (220) corresponding to a pair of support areas (A1, A2) and is connected to a DC power source to generate an electrostatic force by applying a power source; The second insulating layer (240) is formed after the conductive layer (230) is formed.

9. The substrate support frame of the substrate processing device according to any one of claims 1 to 3, characterized in that: The electrostatic chuck (200) is arranged in a pair, corresponding to a pair of the supporting areas (A1, A2) respectively.

10. A substrate processing device (50), characterized in that: include A process chamber (100) forms a processing space (S), wherein the processing space (S) is used to perform substrate processing on two rectangular quadrilateral substrates (1) introduced from the outside; A substrate support frame, as a substrate support frame (130) arranged in the process chamber (100) to support the two rectangular substrates (1), includes the substrate support frame of any one of claims 1 to 4.

11. The substrate processing device (50) according to claim 10, characterized in that: The second overlapping portion (320) includes one or more second overlapping parts (321), and the second overlapping parts (321) are formed while extending toward the end direction so as to overlap with the joint part with the outer shell sealing component (250) in the up-down direction; The outer sealing component (250) forms a second corresponding overlapping portion (253), and the second corresponding overlapping portion (253) overlaps with the second overlapping portion (321) of the second overlapping portion (320) in the vertical direction at a combined portion with the second overlapping portion (320).

12. The substrate processing device (50) according to claim 11, characterized in that: The second overlapping portion (320) includes an insertion portion (330) which is inserted inwardly of a side surface (259) of the outer shell sealing member (250).

13. The substrate processing device (50) according to claim 12, characterized in that: The width of the first overlapping portion (310) is the same as the width of the central sealing component (270), The insertion portion (330) includes an extension portion (350), which forms a width greater than the width of the first overlapping portion (310) and extends in one direction in the width direction to form a continuous side surface with the side surface (259) of the outer shell sealing component (250) when combined with the outer shell sealing component (250).

14. The substrate processing device (50) according to claim 13, characterized in that: The extending portion (350) extends toward the end direction and forms more than one extending overlapping portion (351) so as to overlap with the connecting portion of the outer shell sealing component (250) in the vertical direction; The outer profile sealing component (250) forms a corresponding extended overlapping portion (254), and the corresponding extended overlapping portion (254) overlaps the extended overlapping portion (351) of the extended portion (350) in the up-down direction at a combined portion with the extended portion (350).

15. The substrate processing device (50) according to claim 10, characterized in that: The electrostatic chuck (200) comprises: A physically separated substrate (210); A first insulating layer (220) formed on the substrate (210); A conductor layer (230) is formed on the first insulating layer (220) corresponding to a pair of support areas (A1, A2) and is connected to a DC power source to generate an electrostatic force by applying a power source; The second insulating layer (240) is formed after the conductive layer (230) is formed.

16. The substrate processing device (50) according to claim 10, characterized in that: The electrostatic chuck (200) is arranged in a pair, corresponding to a pair of the supporting areas (A1, A2) respectively.

17. A substrate processing system, characterized in that: include: A loading and locking module (10) is used to import two substrates (1) from the outside through a transport robot (11); A handling module (20) is combined with the loading and locking module (10) and is used to guide the substrate (1) out of the loading and locking module (10) through a handling robot (22); One or more process modules are combined with the transport module (20), and receive the substrate (1) through the transport robot (22) to perform substrate processing; Wherein, the process module is a substrate processing device (50) according to claim 11.

18. The substrate processing system according to claim 17, characterized in that: The second overlapping portion (320) includes more than one second overlapping part (321), and the second overlapping part (321) is formed to extend toward the end direction so as to overlap in the vertical direction at the joint part with the outer shell sealing component (250); The outer sealing component (250) forms a second corresponding overlapping portion (253), and the second corresponding overlapping portion (253) overlaps with the second overlapping portion (321) of the second overlapping portion (320) in the vertical direction at a combined portion with the second overlapping portion (320).

19. The substrate processing system according to claim 18, characterized in that: The second overlapping portion (320) includes an insertion portion (330) which is inserted inwardly of a side surface (259) of the outer shell sealing member (250).

20. The substrate processing system according to claim 19, characterized in that: The width of the first overlapping portion (310) is the same as the width of the central sealing component (270), The insertion portion (330) includes an extension portion (350), which forms a width greater than the width of the first overlapping portion (310) and extends in one direction in the width direction to form a continuous side surface with the side surface (259) of the outer shell sealing component (250) when combined with the outer shell sealing component (250).

21. The substrate processing system according to claim 20, characterized in that: The extending portion (350) extends toward the end direction and forms more than one extending overlapping portion (351) so as to overlap with the connecting portion of the outer shell sealing component (250) in the vertical direction; The outer profile sealing component (250) forms a corresponding extended overlapping portion (254), and the corresponding extended overlapping portion (254) overlaps the extended overlapping portion (351) of the extended portion (350) in the up-down direction at a combined portion with the extended portion (350).

22. The substrate processing system according to claim 17, wherein: The electrostatic chuck (200) comprises: A physically separated substrate (210); A first insulating layer (220) formed on the substrate (210); A conductor layer (230) is formed on the first insulating layer (220) corresponding to a pair of support areas (A1, A2) and is connected to a DC power source to generate an electrostatic force by applying a power source; The second insulating layer (240) is formed after the conductive layer (230) is formed.

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