Substrate Processing Apparatus and Substrate Processing Method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. It is possible to reduce the operations of the substrate processing apparatus and shorten the time taken for substrate processing. The substrate processing apparatus includes: a holding unit that holds a substrate; a liquid supply unit that sequentially supplies a first processing liquid and a second processing liquid different from the first processing liquid to the main surface of the substrate held by the holding unit; a friction body that contacts and rubs the main surface of the substrate during the supply of the first processing liquid and the second processing liquid; a moving unit that moves the contact position of the friction body on the main surface of the substrate in a first axis direction and a second axis direction that are parallel to the main surface of the substrate and intersect each other; and a control unit that controls the liquid supply unit and the moving unit so that during the supply of the first processing liquid, the contact position of the friction body moves in one direction of the first axis direction, and during the subsequent supply of the second processing liquid, the contact position of the friction body moves in the other direction of the first axis direction.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0002] The substrate processing apparatus described in Patent Document 1 performs a feeding process and a lower surface cleaning process. During the feeding process, the peripheral portion of the lower surface of the substrate is held by two suction pads. During the lower surface cleaning process, first, the suction pad holding the substrate is moved in the positive X-axis direction (FIG. 6 of Patent Document 1), and then, the cleaning body is pressed against the lower surface of the substrate (FIG. 7 of Patent Document 1). After that, the operation of moving the two suction pads in the negative X-axis direction and the operation of moving the cleaning body in the positive or negative Y-axis direction between the two suction pads are alternately repeated (FIG. 8 of Patent Document 1). Thereby, the central region of the lower surface of the substrate is cleaned.

[0003] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2019-106531 Summary of the Invention

[0004] Problems to be Solved by the Invention

[0005] One aspect of the present disclosure provides a technique capable of reducing the operations of a substrate processing apparatus and shortening the time taken for substrate processing.

[0006] Solutions for Solving the Problems

[0007] A substrate processing apparatus according to one aspect of the present disclosure includes:

[0008] a holding unit configured to hold a substrate;

[0009] a liquid supply unit configured to sequentially supply a first processing liquid and a second processing liquid different from the first processing liquid to a main surface of the substrate held by the holding unit;

[0010] a friction body configured to contact and friction the main surface of the substrate during the supply of the first processing liquid and the second processing liquid;

[0011] a moving unit configured to move the contact position of the friction body on the main surface of the substrate in a first axis direction and a second axis direction that are parallel to the main surface of the substrate and cross each other; and

[0012] a control unit configured to control the liquid supply unit and the moving unit so that the contact position of the friction body moves in one direction of the first axis direction during the supply of the first processing liquid and moves in the other direction of the first axis direction during the supply of the subsequent second processing liquid.

[0013] Effects of the Invention

[0014] According to one technical solution of the present disclosure, the operation of the substrate processing apparatus can be reduced, and the time taken for substrate processing can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a top view showing a substrate processing apparatus according to an embodiment.

[0016] Figure 2 It is shown Figure 1 a perspective view of the rotary chuck, the blower, and the liquid supply section of

[0017] Figure 3 It is a flowchart showing a substrate processing method according to an embodiment.

[0018] Figure 4 It is shown Figure 3 a flowchart of an example of S2 of

[0019] Figure 5 It is shown Figure 3 a flowchart of an example of S4 of

[0020] Figure 6A It is shown Figure 3 a cross-sectional view of the substrate processing apparatus at the completion of S1 of

[0021] Figure 6B It is a top view showing through the substrate Figure 6A a partial view of

[0022] Figure 7A It is shown Figure 4 a cross-sectional view of the substrate processing apparatus at the start of S21 of

[0023] Figure 7B It is a top view showing through the substrate Figure 7A a partial view of

[0024] Figure 8A It is shown Figure 4 a cross-sectional view of the substrate processing apparatus at the completion of S21 of

[0025] Figure 8B It is a top view showing through the substrate Figure 8A a partial view of

[0026] Figure 9 It is a top view showing through the substrate Figure 4 a partial view of the substrate processing apparatus at the start of S22 of

[0027] Figure 10is a perspective substrate and shows Figure 4 A partial top view of the substrate processing apparatus at the completion of S22.

[0028] Figure 11 shows Figure 3 A cross-sectional view of the substrate processing apparatus at the start of S4. Detailed Embodiments

[0029] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In addition, in each drawing, the same or corresponding structures may sometimes be denoted by the same reference numerals, and the description thereof may be omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0030] When the substrate W is held horizontally, the X-axis direction and the Y-axis direction are directions parallel to the main surface of the substrate W. The X-axis direction is the moving direction of a pair of suction pads 24, and the Y-axis direction is the moving direction of the friction body 70. The X-axis direction corresponds to the first axis direction, and the Y-axis direction corresponds to the second axis direction. In addition, the first axis direction and the second axis direction are orthogonal directions in the present embodiment, but may also be obliquely intersecting directions.

[0031] As Figure 1 shown, the substrate processing apparatus 10 includes a holding unit 20, a liquid supply unit 30, a friction body 70, a moving unit 80, and a control unit 90. The holding unit 20 contacts the lower surface of the substrate W and holds the substrate W horizontally. The liquid supply unit 30 sequentially supplies a first processing liquid and a second processing liquid different from the first processing liquid to the lower surface of the substrate W held by the holding unit 20. The friction body 70 contacts the lower surface of the substrate W during the supply of the first processing liquid and the second processing liquid, and rubs the lower surface of the substrate W, thereby being able to scrub the lower surface of the substrate W. The moving unit 80 relatively moves the holding unit 20 and the friction body 70 in the X-axis direction and the Y-axis direction, and moves the contact position of the friction body 70 on the main surface of the substrate W. The control unit 90 controls the liquid supply unit 30 and the moving unit 80 to process the lower surface of the substrate W.

[0032] As Figure 6A shown, the holding unit 20 contacts the lower surface of the substrate W and holds the substrate W horizontally. The substrate W is, for example, a semiconductor substrate or a glass substrate. The semiconductor substrate is a silicon wafer or a compound semiconductor wafer, etc. Devices may be formed in advance on at least one of the lower surface and the upper surface of the substrate W. The devices include semiconductor elements, circuits, or terminals, etc. The holding unit 20 includes a first holding unit 21 and a second holding unit 22.

[0033] The first holding unit 21 adsorbs Figure 6BThe first region A1 on the lower surface of the substrate W shown is held. The first region A1 is a region including the center of the lower surface of the substrate W. The boundary B between the first region A1 and the second region A2 is, for example, rectangular. Two sides of the rectangle are parallel to the X-axis direction, the remaining two sides of the rectangle are parallel to the Y-axis direction, and the four corners of the rectangle are arc-shaped with the same radius as the upper surface of the friction body 70. The first holding portion 21 includes, for example, a rotating chuck 23.

[0034] As Figure 6A shown, the rotating chuck 23 is connected to a rotating mechanism 15. The rotating mechanism 15 rotates the rotating chuck 23 about a vertical axis. This rotation center line is parallel to the Z-axis direction. The rotating chuck 23 is moved in the Z-axis direction by a lifting mechanism 16. In addition, the rotating chuck 23 does not move in the X-axis direction and the Y-axis direction.

[0035] A transfer member 17 is arranged around the rotating chuck 23. The transfer member 17 includes, for example, a plurality of lifting pins 171, and the plurality of lifting pins 171 are arranged at equal intervals in the circumferential direction of the rotating chuck 23. The transfer member 17 moves up and down around the rotating chuck 23, receives the substrate W from a conveying device (not shown), and transfers the received substrate W to the second holding portion 22.

[0036] In addition, a gas ejection ring 18 is arranged around the rotating chuck 23. The gas ejection ring 18 surrounds the rotating chuck 23 and forms an annular air curtain toward the lower surface of the substrate W. The air curtain restricts the first processing liquid and the second processing liquid from entering the inside from the outside, thereby protecting the rotating chuck 23. The air curtain also protects the transfer member 17.

[0037] As Figure 2 and Figure 6B shown, the gas ejection ring 18 includes a cylindrical body 181 and a plurality of ejection ports 182 arranged over the entire circumference on the upper surface of the cylindrical body 181. The plurality of ejection ports 182 eject gas upward to form an annular air curtain. The gas is an inert gas such as nitrogen or dry air.

[0038] The second holding portion 22 adsorbs Figure 6B the second region A2 on the lower surface of the substrate W shown and holds it. The second region A2 is a region including the periphery of the lower surface of the substrate W and adjacent to the periphery of the first region A1. The second holding portion 22 includes a pair of adsorption pads 24 arranged at intervals in the Y-axis direction.

[0039] As Figure 1 shown, the pair of adsorption pads 24 are fixed to the central portions in the longitudinal directions of a pair of first rods 25. The pair of first rods 25 are arranged with the rotating chuck 23 therebetween and are mounted on a pair of second rods 26. The pair of first rods 25 and the pair of second rods 26 form a rectangular frame 27.

[0040] The frame 27 is connected to the first moving part 81 of the moving part 80. The first moving part 81 moves a pair of suction pads 24 in the X-axis direction by means of the frame 27. In addition, the frame 27 is connected to the lifting mechanism 19. The lifting mechanism 19 moves a pair of suction pads 24 in the Z-axis direction by means of the frame 27.

[0041] A ring hood 14 is fixed to the frame 27. The ring hood 14 surrounds the substrate W over the entire circumference of the substrate W, suppressing the scattering of droplets from the substrate W. An opening having a diameter larger than the diameter of the substrate W is provided on the upper surface of the ring hood 14. The opening is a passage for the substrate W.

[0042] The liquid supply unit 30 sequentially supplies a first processing liquid and a second processing liquid different from the first processing liquid to the lower surface of the substrate W held by the holding unit 20. The first processing liquid is a cleaning liquid for removing contaminants from the substrate W, for example, a chemical solution such as SC1 (a mixed solution of ammonia, hydrogen peroxide, and water). In addition, the type of the chemical solution is not particularly limited. On the other hand, the second processing liquid is a rinsing liquid for removing the first processing liquid, for example, DIW (deionized water). The first processing liquid may not be a cleaning liquid and may be an etching liquid or a stripping liquid. In addition, the second processing liquid may not be DIW and may be diluted ammonia water or ozone water.

[0043] As Figure 2 shown, the liquid supply unit 30 includes, for example, lower nozzles 31 and 32. When the friction body 70 frictions the first region A1 and the second region A2, the lower nozzle 31 supplies a chemical solution or a rinsing liquid. In addition, when the friction body 70 frictions the periphery of the second region A2, the lower nozzle 32 supplies a chemical solution or a rinsing liquid.

[0044] The lower nozzle 31 has a chemical solution ejection port 311 and a rinsing liquid ejection port 312. The chemical solution ejection port 311 is arranged at a position lower than the rinsing liquid ejection port 312. Therefore, it is possible to suppress the attachment of the chemical solution to the rinsing liquid ejection port 312. The number of the chemical solution ejection ports 311 is plural, but may also be one. Similarly, the number of the rinsing liquid ejection ports 312 is plural, but may also be one.

[0045] As Figure 1 shown, the lower nozzle 31 is connected to a chemical solution supply source 34 via a pipe 33. An on-off valve 35 and a flow controller 36 are provided in the middle of the pipe 33. When the on-off valve 35 opens the flow path of the pipe 33, the chemical solution is supplied from the chemical solution supply source 34 to the lower nozzle 31, and the chemical solution is ejected from the ejection port 311. The ejection amount is controlled by the flow controller 36. On the other hand, when the on-off valve 35 closes the flow path of the pipe 33, the supply of the chemical solution from the chemical solution supply source 34 to the lower nozzle 31 is stopped, and the ejection of the chemical solution is stopped.

[0046] In addition, the lower nozzle 31 is connected to a rinsing liquid supply source 38 via a pipe 37. An on-off valve 39 and a flow controller 40 are provided in the middle of the pipe 37. When the on-off valve 39 opens the flow path of the pipe 37, the rinsing liquid is supplied from the rinsing liquid supply source 38 to the lower nozzle 31, and the rinsing liquid is ejected from the ejection port 312. The ejection amount is controlled by the flow controller 40. On the other hand, when the on-off valve 39 closes the flow path of the pipe 37, the supply of the rinsing liquid from the rinsing liquid supply source 38 to the lower nozzle 31 is stopped, and the ejection of the rinsing liquid is stopped.

[0047] As Figure 2 shown, similarly to the lower nozzle 31, the lower nozzle 32 has a chemical solution ejection port 321 and a rinsing liquid ejection port 322. In addition, similarly to the lower nozzle 31, the lower nozzle 32 is connected to a chemical solution supply source 42 via a pipe 41. An on-off valve 43 and a flow controller 44 are provided in the middle of the pipe 41. Moreover, the lower nozzle 32 is connected to a rinsing liquid supply source 46 via a pipe 45. An on-off valve 47 and a flow controller 48 are provided in the middle of the pipe 45.

[0048] The liquid supply unit 30 also supplies a processing liquid to the upper surface of the substrate W held by the holding unit 20. A rinsing liquid such as DIW is used as the processing liquid. In addition, as the processing liquid, a chemical solution and a rinsing liquid may be used in sequence. As Figure 1 shown, the liquid supply unit 30 includes upper nozzles 51 and 52, for example.

[0049] The upper nozzle 51 supplies the processing liquid to the center of the upper surface of the substrate W during the rotation of the substrate W. The processing liquid wets the entire upper surface of the substrate W due to centrifugal force and spreads over the entire upper surface of the substrate W, and is thrown off at the periphery of the substrate W. Similarly to the lower nozzle 31, the upper nozzle 51 is connected to a processing liquid supply source 54 via a pipe 53. An on-off valve 55 and a flow controller 56 are provided in the middle of the pipe 53.

[0050] The upper nozzle 52 moves in the radial direction of the substrate W during the rotation of the substrate W, and supplies the processing liquid over the entire radial direction of the upper surface of the substrate W. The liquid supply unit 30 includes a moving device 65 that moves the upper nozzle 52 in the radial direction of the substrate W. The upper nozzle 52 is a two-fluid nozzle, and uses a gas such as N2 gas to crush the processing liquid, atomize it, and eject it. The processing efficiency of the processing liquid can be improved.

[0051] Similarly to the lower nozzle 31, the upper nozzle 52 is connected to the treatment liquid supply source 58 via a pipe 57. An on-off valve 59 and a flow controller 60 are provided midway in the pipe 57. Further, the upper nozzle 52 is connected to a gas supply source 62 via a pipe 61. An on-off valve 63 and a flow controller 64 are provided midway in the pipe 61. When the on-off valve 63 opens the flow path of the pipe 61, gas is supplied from the gas supply source 62 to the upper nozzle 52, and the gas is ejected from the upper nozzle 52. The ejection amount thereof is controlled by the flow controller 64. On the other hand, when the on-off valve 63 closes the flow path of the pipe 61, the supply of gas from the gas supply source 62 to the upper nozzle 52 is stopped, and the ejection of the gas is stopped.

[0052] The various treatment liquids ejected from the liquid supply unit 30 are recovered by the treatment tank 11. The treatment tank 11 is, for example, box-shaped. As Figure 6A shown, etc., a drain pipe 12 for discharging the treatment liquid and an exhaust pipe 13 for discharging gas are provided on the bottom wall of the treatment tank 11.

[0053] The friction body 70 contacts the lower surface of the substrate W and rubs the lower surface of the substrate W. The friction body 70 is a brush or a sponge. The friction body 70 is, for example, cylindrical, and the upper surface of the friction body 70 is arranged horizontally. The upper surface of the friction body 70 is smaller than the lower surface of the substrate W. Further, the friction body 70 is arranged below the substrate W in the present embodiment, but may be arranged above the substrate W and may rub the upper surface of the substrate W.

[0054] The friction body 70 is connected to a rotation motor 72 via a vertical rotation shaft 71. The rotation motor 72 rotates the friction body 70 about the rotation shaft 71. The rotation motor 72 is connected to a second moving unit 82 of the moving unit 80 via an arm 73. The second moving unit 82 moves the friction body 70 in the Y-axis direction. The second moving unit 82 also moves the friction body 70 in the Z-axis direction.

[0055] The moving unit 80 relatively moves the holding unit 20 and the friction body 70 in the X-axis direction and the Y-axis direction, and moves the contact position of the friction body 70 at the lower surface of the substrate W. For example, the moving unit 80 includes a first moving unit 81 and a second moving unit 82. As described above, the first moving unit 81 moves the second holding unit 22 in the X-axis direction. On the other hand, as described above, the second moving unit 82 moves the friction body 70 in the Y-axis direction.

[0056] The control unit 90 is, for example, a computer, as Figure 1As shown in the figure, it includes a CPU (Central Processing Unit) 91 and a storage medium such as a memory 92. A program for controlling various processes executed in the substrate processing apparatus 10 is stored in the storage medium 92. The control unit 90 controls the operation of the substrate processing apparatus 10 by executing the program stored in the storage medium 92 with the CPU 91. In addition, the control unit 90 includes an input interface 93 and an output interface 94. The control unit 90 receives signals from the outside using the input interface 93 and sends signals to the outside using the output interface 94.

[0057] The above program is stored in a storage medium that can be read by a computer, for example, and is loaded from this storage medium into the storage medium 92 of the control unit 90. Examples of storage media that can be read by a computer include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), and a memory card. In addition, the program can also be downloaded from a server via the Internet and loaded into the storage medium 92 of the control unit 90.

[0058] Next, with reference to Figure 3 etc., the operation of the substrate processing apparatus 10, that is, the substrate processing method, will be described. As Figure 3 shown, the substrate processing method includes holding S1, lower surface processing S2, exchange holding S3, double-sided processing S4, and drying S5. This processing method is implemented under the control of the control unit 90.

[0059] In the holding S1, the second holding unit 22 holds the substrate W. Specifically, first, a conveying device (not shown) conveys the substrate W above the rotary chuck 23 and stands by. Next, the transfer member 17 rises around the rotary chuck 23, protrudes upward from the opening of the ring cover 14, and lifts the substrate W from the conveying device. Next, when the conveying device withdraws from the substrate processing apparatus 10, the moving unit 80 raises the ring cover 14 and the pair of adsorption pads 24. After that, the transfer member 17 descends and transfers the substrate W to the pair of adsorption pads 24. Next, the pair of adsorption pads 24 adsorb and hold the second region A2 on the lower surface of the substrate W. As described above, the second region A2 is a region that includes the periphery of the lower surface of the substrate W and is adjacent to the periphery of the first region A1.

[0060] In the lower surface processing S2, with the substrate W held by the second holding unit 22, the friction body 70 frictions the first region A1 on the lower surface of the substrate W. As described above, the first region A1 is a region that includes the center of the lower surface of the substrate W and is the region between the pair of adsorption pads 24. As Figure 4 shown, the lower surface processing S2 includes chemical solution processing S21 and rinsing solution processing S22.

[0061] In the chemical solution treatment S21, the control unit 90 controls the moving unit 80 and the liquid supply unit 30. During the supply of the chemical solution, as Figure 7B and Figure 8B shown, the contact position of the friction body 70 on the lower surface of the substrate W is moved within the first region A1. Further, in the chemical solution treatment S21, the control unit 90 controls the rotation motor 72 to rotate the friction body 70.

[0062] The control unit 90 alternately repeats the operation of moving the second holding unit 22 in the positive X-axis direction to move the contact position of the friction body 70 in the negative X-axis direction, and the operation of moving the friction body 70 in the positive Y-axis direction or the negative Y-axis direction. As Figure 8B shown, the movement path of the rotation center of the friction body 70 is a zigzag trajectory.

[0063] In the chemical solution treatment S21, as described above, the second holding unit 22 is moved in the positive X-axis direction. The positive X-axis direction is the direction in which the center of the substrate W held by the second holding unit 22 is away from the center of the first holding unit 21. Compared with the case where, as in the past, the second holding unit 22 is temporarily moved in the positive X-axis direction before performing scrubbing and then scrubbing is performed while moving the second holding unit 22 in the negative X-axis direction, useless operations can be omitted and the processing time can be shortened.

[0064] In addition, the transfer member 17 is disposed around the rotary chuck 23. Therefore, as Figure 6A shown, at the position where the center line of the rotary chuck 23 coincides with the center of the substrate W, the second holding unit 22 receives the substrate W. Therefore, the moving direction of the second holding unit 22 in the X-axis direction thereafter first becomes the positive X-axis direction. Thus, in the chemical solution treatment S21, the second holding unit 22 is moved in the positive X-axis direction.

[0065] Further, according to the present embodiment, scrubbing is performed while moving the second holding unit 22 in the positive X-axis direction. Therefore, compared with the case where scrubbing is performed while moving the second holding unit 22 in the negative X-axis direction as in the past, drying of the chemical solution adhering to the substrate W can be suppressed. Since the positive X-axis direction is the direction in which the center of the substrate W is away from the center of the first holding unit 21, it is the direction in which the first region A1 is away from the gas ejection ring 18. Since the first region A1 is away from the air curtain, drying of the chemical solution adhering to the substrate W can be suppressed, and generation of fine particles can be suppressed.

[0066] In addition, during the supply of the chemical solution, if the gas ejection ring 18 does not form an air curtain, drying of the chemical solution adhering to the substrate W can be suppressed. However, since no air curtain is formed, the chemical solution may splash onto the rotating chuck 23. According to the present embodiment, during the supply of the chemical solution, since the gas ejection ring 18 forms an air curtain, the rotating chuck 23 can be protected from the influence of the chemical solution.

[0067] In the rinse liquid treatment S22, the control unit 90 controls the moving unit 80 and the liquid supply unit 30. During the supply of the rinse liquid, as Figure 9 and Figure 10 shown, the contact position of the friction body 70 on the lower surface of the substrate W is moved within the first region A1. Further, in the rinse liquid treatment S22, the control unit 90 controls the rotation motor 72 to rotate the friction body 70.

[0068] The control unit 90 alternately repeats the operation of moving the second holding unit 22 in the negative X-axis direction to move the contact position of the friction body 70 in the positive X-axis direction, and the operation of moving the friction body 70 in the positive Y-axis direction or the negative Y-axis direction. As Figure 10 shown, the movement path of the rotation center of the friction body 70 is a zigzag trajectory.

[0069] In the chemical solution treatment S21 and the rinse liquid treatment S22, the contact position of the friction body 70 moves in the X-axis direction, but the moving directions are opposite. After the chemical solution treatment S21 and before the rinse liquid treatment S22, there is no need to move the contact position of the friction body 70, so useless operations can be omitted and the processing time can be shortened. This effect can be obtained if the moving directions of the contact position of the friction body 70 in the X-axis direction are opposite in the chemical solution treatment S21 and the rinse liquid treatment S22.

[0070] In the rinse liquid treatment S22, as described above, the second holding unit 22 is moved in the negative X-axis direction. The negative X-axis direction is the direction in which the center of the substrate W held by the second holding unit 22 approaches the center of the first holding unit 21. Therefore, the operations required for aligning the second holding unit 22 and the first holding unit 21 after the rinse liquid treatment S22 and before the exchange holding S3 can be reduced, and the processing time of the substrate W can be shortened.

[0071] In the exchange and holding S3, the control unit 90 performs the transfer of the substrate W from the second holding unit 22 to the first holding unit 21. First, the first moving unit 81 moves the second holding unit 22 in the negative X-axis direction to align the center of the substrate W held by the second holding unit 22 with the center of the first holding unit 21. Next, the lifting mechanism 19 lowers the second holding unit 22 and places the substrate W on the first holding unit 21. At this time, the second holding unit 22 releases the adsorption and holding of the substrate W, and the first holding unit 21 adsorbs and holds the first region A1 on the lower surface of the substrate W.

[0072] Alternatively, instead of lowering the second holding unit 22 by the lifting mechanism 19, the lifting mechanism 16 can be used to raise the first holding unit 21 to perform the transfer of the substrate W from the second holding unit 22 to the first holding unit 21. In either case, the second region A2 on the lower surface of the substrate W can be processed after the exchange and holding S3, and the first region A1 on the lower surface of the substrate W can be processed before the exchange and holding S3. Therefore, the entire lower surface of the substrate W can be processed.

[0073] In the double-sided processing S4, the processing of the second region A2 on the lower surface of the substrate W and the processing of the entire upper surface of the substrate W are performed. As Figure 5 shown, the processing of the second region A2 on the lower surface includes the chemical solution processing S41 and the rinsing solution processing S42. In addition, as Figure 5 shown, the processing of the entire upper surface includes the spin coating processing S43 and the scanning processing S44. Alternatively, during the processing of the second region A2 on the lower surface, a part of the first region A1 on the lower surface can also be processed as long as the first holding unit 21 and the friction body 70 do not interfere with each other.

[0074] In the chemical solution processing S41, the control unit 90 controls the liquid supply unit 30 and the second moving unit 82 in a state where the substrate W is held by the first holding unit 21 and the first holding unit 21 is rotated by the rotating mechanism 15, so that during the supply of the chemical solution, the contact position of the friction body 70 moves over the entire second region A2. The contact position of the friction body 70 can also extend from the second region A2 to the first region A1 during the movement over the entire second region A2. The second moving unit 82 gradually moves the contact position of the friction body 70 toward the radially outer side of the substrate W. In addition, in the chemical solution processing S41, the control unit 90 controls the rotation motor 72 to rotate the friction body 70.

[0075] In the rinse liquid treatment S42, the control unit 90 controls the liquid supply unit 30 and the second moving unit 82 in a state where the substrate W is held by the first holding unit 21 and the first holding unit 21 is rotated by the rotation mechanism 15, so that during the supply of the rinse liquid, the contact position of the friction body 70 moves over the entire second region A2. The contact position of the friction body 70 may extend from the second region A2 to the first region A1 during the movement over the entire second region A2. The second moving unit 82 gradually moves the contact position of the friction body 70 toward the radially outer side of the substrate W. Further, in the rinse liquid treatment S42, the control unit 90 controls the rotation motor 72 to rotate the friction body 70.

[0076] In the spin coating treatment S43, the rotation mechanism 15 rotates the substrate W together with the rotating chuck 23, and the upper nozzle 51 supplies the treatment liquid to the center of the upper surface of the substrate W. The treatment liquid wets the entire upper surface of the substrate W due to the centrifugal force and spreads over the entire upper surface of the substrate W, washing away the dirt separated from the substrate W toward the radially outer side of the substrate W. As the treatment liquid, for example, a rinse liquid such as DIW is used. Additionally, as the treatment liquid, a chemical solution and a rinse liquid may be used in sequence.

[0077] The rotation mechanism 15 rotates the rotating chuck 23 at a low speed so that the residual liquid on the lower surface of the substrate W does not reach the upper surface of the substrate W via the periphery of the substrate W due to the centrifugal force. The control unit 90 controls the rotation speed of the rotating chuck 23 and the supply amount of the treatment liquid from the upper nozzle 51 so that a liquid film of the treatment liquid is formed on the entire upper surface of the substrate W before the residual liquid on the lower surface of the substrate W reaches the periphery of the substrate W.

[0078] The control unit 90 performs the bevel surface treatment of the substrate W during the low-speed rotation of the rotating chuck 23. In the bevel surface treatment of the substrate W, a friction body such as a brush or a sponge (not shown) is pressed against the periphery of the substrate W and the periphery of the substrate W is rubbed. The control unit 90 ends the bevel surface treatment of the substrate W and separates the friction body from the periphery of the substrate W during the low-speed rotation of the rotating chuck 23. Since the centrifugal force during the low-speed rotation is small and the speed of the liquid droplets thrown off from the periphery of the substrate W is small, liquid splashing caused by the collision between the liquid droplets and the friction body can be suppressed.

[0079] In the scanning treatment S44, the rotation mechanism 15 rotates the substrate W together with the rotating chuck 23, the upper nozzle 52 supplies the treatment liquid to the center of the upper surface of the substrate W, and the moving device 65 moves the upper nozzle 52 from the radially inner side to the radially outer side of the substrate W. The dirt separated from the substrate W is washed away toward the radially outer side of the substrate W.

[0080] The upper nozzle 52 sprays the processing liquid toward the upper surface of the substrate W while gradually moving from a position directly above the center of the substrate W to a position directly above the periphery of the substrate W, and stops at the position directly above the periphery of the substrate W within a set time. This is because dirt is likely to adhere to the periphery of the substrate W. According to the present embodiment, the dirt adhering to the periphery of the substrate W can be removed.

[0081] In addition, the moving direction of the upper nozzle 52 is the radially outer side of the substrate W in the present embodiment, but it may also be the radially inner side of the substrate W. Further, the number of scans of the upper nozzle 52 is one in the present embodiment, but it may also be multiple.

[0082] In the scanning process S44, the control unit 90 increases the rotation speed of the rotary chuck 23 and rotates the rotary chuck 23 at a high speed as compared with the spin coating process S43. When the upper nozzle 52 is moved in the radial direction of the substrate W, the processing liquid can be blown away over the entire circumference of the substrate W.

[0083] The upper nozzle 52 is, for example, a two-fluid nozzle that atomizes the processing liquid by using a gas such as N2 gas and sprays it. The processing efficiency of the processing liquid can be improved. The upper nozzle 52 sprays only the gas before spraying the mixed fluid of the gas and the processing liquid. The processing liquid can be reliably atomized, and liquid splashing can be suppressed when the processing liquid collides with the substrate W.

[0084] In the drying S5, the rotary chuck 23 is rotated at a high speed to fling off the processing liquid adhering to the substrate W. Thereafter, the substrate W is conveyed to the outside of the substrate processing apparatus 10. Thus, the processing of the substrate W is completed.

[0085] As described above, embodiments of the substrate processing apparatus and the substrate processing method of the present disclosure have been described, but the present disclosure is not limited to the above embodiments and the like. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope described in the claims. These also of course belong to the technical scope of the present disclosure.

Claims

1. A substrate processing apparatus, wherein, The substrate processing apparatus includes: a holding unit configured to hold a substrate; a liquid supply unit configured to sequentially supply a first processing liquid and a second processing liquid different from the first processing liquid to a main surface of the substrate while the substrate is held by the holding unit; a friction member configured to contact and friction the main surface of the substrate during the supply of the first processing liquid and the second processing liquid; a moving unit configured to move the contact position of the friction member on the main surface of the substrate in a first axial direction and a second axial direction that are parallel to the main surface of the substrate and cross each other; and a control unit configured to control the liquid supply unit and the moving unit such that during the supply of the first processing liquid, the contact position of the friction member moves in one direction of the first axial direction, and during the subsequent supply of the second processing liquid, the contact position of the friction member moves in the other direction of the first axial direction.

2. The substrate processing apparatus according to claim 1, wherein, The holding unit contacts the main surface of the substrate.

3. The substrate processing apparatus according to claim 2, wherein, The main surface of the substrate is the lower surface of the substrate. The holding unit includes: a first holding unit configured to adsorb and hold a first region of the lower surface of the substrate, the first region including the center of the lower surface of the substrate; and a second holding unit configured to adsorb and hold a second region of the lower surface of the substrate, the second region including the periphery of the lower surface of the substrate and adjoining the periphery of the first region. The control unit controls the liquid supply unit and the moving unit while the substrate is held by the second holding unit such that during the supply of the first processing liquid, the contact position of the friction member moves in one direction of the first axial direction within the first region, and during the subsequent supply of the second processing liquid, the contact position of the friction member moves in the other direction of the first axial direction within the first region.

4. The substrate processing apparatus according to claim 3, wherein, The substrate processing apparatus further includes a transfer member configured to lift around the first holding unit, receive the substrate from an external transfer device, and transfer the received substrate to the second holding unit. The moving unit includes: a first moving unit configured to move the second holding unit in the first axial direction; and a second moving unit configured to move the friction member in the second axial direction. The control unit controls the liquid supply unit and the first moving unit while the substrate is held by the second holding unit such that during the supply of the first processing liquid, the second holding unit moves in a direction away from the center of the first holding unit with respect to the center of the substrate, and during the supply of the second processing liquid, the second holding unit moves in a direction toward the center of the first holding unit with respect to the center of the substrate.

5. The substrate processing apparatus according to claim 4, wherein, The substrate processing apparatus further includes a gas ejection ring configured to form an annular air curtain around the first holding unit toward the lower surface of the substrate during the supply of the first processing liquid.

6. The substrate processing apparatus according to claim 4 or 5, wherein, The substrate processing apparatus further includes: a lifting mechanism that relatively lifts and lowers the first holding portion and the second holding portion, and transfers the substrate from the second holding portion to the first holding portion; and a rotation mechanism that rotates the first holding portion. In a state where the substrate is held by the first holding portion and the first holding portion is rotated by the rotation mechanism, the control unit controls the liquid supply unit and the second moving unit so that during the supply of the first processing liquid, the contact position of the friction body moves over the entire second area.

7. The substrate processing apparatus according to claim 6, wherein, The liquid supply unit includes an upper nozzle that supplies a processing liquid to the upper surface of the substrate. During the period when the contact position of the friction body moves over the entire second area, the control unit controls the liquid supply unit to supply the processing liquid to the upper surface of the substrate.

8. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The liquid supply unit has a spout for a chemical solution as the first processing liquid and a spout for a rinse liquid as the second processing liquid. The spout for the chemical solution is arranged at a position lower than the spout for the rinse liquid.

9. A substrate processing method, wherein, This substrate processing method includes: holding a substrate using a holding portion; sequentially supplying a first processing liquid and a second processing liquid different from the first processing liquid to the main surface of the substrate; frictionally rubbing the main surface of the substrate using a friction body that contacts the main surface of the substrate; and moving the contact position of the friction body on the main surface of the substrate in a direction parallel to the main surface of the substrate and in a first axial direction and a second axial direction that intersect each other. Regarding the movement of the contact position of the friction body, during the supply of the first processing liquid, the contact position of the friction body is moved in one direction of the first axial direction, and during the subsequent supply of the second processing liquid, the contact position of the friction body is moved in the other direction of the first axial direction.

10. The substrate processing method according to claim 9, wherein, The holding portion contacts the main surface of the substrate.

11. The substrate processing method according to claim 10, wherein, The main surface of the substrate is the lower surface of the substrate. The holding portion has: a first holding portion that adsorbs and holds a first area of the lower surface of the substrate, the first area including the center of the lower surface of the substrate; and a second holding portion that adsorbs and holds a second area of the lower surface of the substrate, the second area including the periphery of the lower surface of the substrate and being adjacent to the periphery of the first area. In a state where the substrate is held by the second holding portion, during the supply of the first processing liquid, the contact position of the friction body is moved in one direction of the first axial direction within the first area, and during the subsequent supply of the second processing liquid, the contact position of the friction body is moved in the other direction of the first axial direction within the first area.

12. The substrate processing method according to claim 11, wherein, This substrate processing method includes: receiving the substrate from an external transfer device using a transfer member that moves up and down around the first holding portion, and transferring the received substrate to the second holding portion. While holding the substrate by the second holding part, during the supply of the first processing liquid, move the second holding part in a direction away from the center of the first holding part with respect to the center of the substrate, and during the supply of the second processing liquid, move the second holding part in a direction closer to the center of the first holding part with respect to the center of the substrate.

13. The substrate processing method according to claim 12, wherein, This substrate processing method further includes: During the supply of the first processing liquid, form an annular air curtain around the first holding part so as to face the lower surface of the substrate.

14. The substrate processing method according to claim 12 or 13, wherein, This substrate processing method further includes: Lift the first holding part and the second holding part relatively, and transfer the substrate from the second holding part to the first holding part; and While holding the substrate by the first holding part and rotating the first holding part, during the supply of the first processing liquid, move the contact position of the friction body over the entire second area.

15. The substrate processing method according to claim 14, wherein, This substrate processing method includes: During the period when the contact position of the friction body moves over the entire second area, supply a processing liquid to the upper surface of the substrate.

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