Substrate processing device and substrate processing method

Abstract

The present disclosure relates to a substrate processing device and a substrate processing method. The substrate processing device comprises: a supporting unit, which supports a substrate and rotates the substrate; and a spraying unit, which comprises one or more nozzles, which sprays a two-fluid mixture of a cleaning liquid and carbon dioxide onto the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method, and more particularly to a substrate processing device and a substrate processing method that can be used to manufacture semiconductors. Background Art

[0002] Semiconductor elements are manufactured through multiple processes, and as they go through these processes, the surface of the semiconductor substrate is contaminated by impurities. For example, the surface of large flat panel display devices such as silicon wafers, glass panels, PDPs, and LCDs is contaminated by impurities, so a cleaning process must be performed to remove the impurities.

[0003] Semiconductor substrate cleaning methods are generally divided into wet chemical methods, dry methods, vapor phase methods, etc. Most of the traditional wafer cleaning methods are chemical wet methods using hydrogen peroxide solutions, but due to the consumption of a large amount of chemical substances, the waste of these substances after use, and the incompatibility with the developing manufacturing process, the trend is gradually turning to dry or vapor phase methods.

[0004] As a conventional cleaning method for cleaning impurities from a substrate, the RCA method is a wet cleaning method that combines an ammonia hydrogen peroxide solution, a hydrofluoric acid aqueous solution, and a hydrochloric acid hydrogen peroxide solution, and the conventional dry cleaning method is a method of removing contaminated metals on the surface of the substrate by evaporating metal chlorides using chlorine free radicals generated by ultraviolet (UV) irradiation. That is, conventional cleaning technologies mainly use wet cleaning methods, such as a method of using a large amount of aqueous solution and a harmful solution to treat the surface of the object to be treated, a method of using UV-O 3 There are methods such as a method of activating ozone with ultraviolet rays (Ultra-Violet) for cleaning, and a method of utilizing oxygen plasma in a vacuum.

[0005] In the conventional substrate cleaning method, in order to remove the photoresist on the substrate, ozone water is converted into steam or directly sprayed with a common nozzle. In such a method, when the wafer rotates at a low speed, a puddle phenomenon is generated in which the chemical solution only accumulates in the center of the wafer, and it may be difficult to remove foreign matter at the edge of the wafer.

[0006] In addition, in the method of spraying the cleaning liquid in the form of steam onto the substrate, the solubility of ozone in the cleaning liquid is reduced due to the high temperature of the steam, thereby reducing the substrate cleaning power. In addition, in the method of simply spraying the cleaning liquid through the nozzle, the cleaning liquid cannot hit the substrate strongly, so the substrate cleaning power may be reduced.

[0007] (Prior art literature)

[0008] (Patent Document)

[0009] Patent Document 0001: U.S. Patent No. 4029578 Summary of the invention

[0010] An object of the present invention is to provide a substrate processing device and a substrate processing method capable of improving substrate cleaning power.

[0011] A substrate processing apparatus according to one aspect of the present invention includes: a support unit that supports a substrate and rotates the substrate; and a spray unit that includes one or more nozzles that spray a mixture of a cleaning liquid and carbon dioxide toward the substrate.

[0012] On the other hand, the spray unit may include: a cleaning liquid supply component connected to the nozzle and supplying cleaning liquid to the nozzle; and a carbon dioxide supply component connected to the nozzle and supplying carbon dioxide to the nozzle.

[0013] On the other hand, the substrate processing apparatus may further include: a rotation speed measuring component for measuring a rotation speed of a portion of the support unit that rotates the substrate; and a control unit for selectively controlling the number of the nozzles based on the rotation speed measured by the rotation speed measuring component.

[0014] On the other hand, when the rotation speed measured by the rotation speed measuring unit is lower than the target rotation speed, the control unit may spray the two fluids toward the substrate using a plurality of nozzles.

[0015] On the other hand, when the rotation speed measured by the rotation speed measuring unit is equal to or higher than the target rotation speed, the control unit may spray the two fluids toward the substrate using one nozzle.

[0016] On the other hand, the substrate processing device may include: a flow rate measuring component, which is arranged on the injection unit and measures the flow rate of the two fluids; and a control unit, which controls the pressure of carbon dioxide mixed with the cleaning liquid based on the flow rate of the two fluids measured by the flow rate measuring component.

[0017] On the other hand, when the flow velocity measured by the flow velocity measuring means is lower than the target flow velocity, the control unit may increase the pressure of the carbon dioxide mixed with the cleaning fluid.

[0018] On the other hand, when the flow velocity measured by the flow velocity measuring means is equal to or higher than the target flow velocity, the control unit may notify the outside that the flow velocity is in a normal state.

[0019] On the other hand, the temperature of the cleaning liquid may be within the range of 1 to 10 degrees.

[0020] In another aspect, the cleaning liquid may be ozone water.

[0021] One aspect of the substrate processing method of the present invention includes: a substrate rotation step of rotating a substrate; a rotation speed measuring step of measuring the rotation speed of the substrate; a nozzle quantity determination step of setting the number of nozzles based on the measured rotation speed of the substrate; and a two-fluid injection step of injecting a two-fluid mixture of a cleaning liquid and carbon dioxide onto the substrate.

[0022] On the other hand, in the nozzle number determination step, when the measured rotation speed of the substrate is lower than a target speed, a plurality of nozzles may be selected.

[0023] On the other hand, in the nozzle number determination step, when the measured rotation speed of the substrate is higher than a target speed, one nozzle may be selected.

[0024] On the other hand, the substrate processing method may further include: a flow rate measuring step of measuring the flow rates of the two fluids; and a pressure controlling step of controlling the pressure of the supplied carbon dioxide based on the measured flow rates.

[0025] On the other hand, in the pressure control step, when the measured flow rate is lower than a target flow rate, the pressure of the carbon dioxide mixed with the cleaning liquid may be increased.

[0026] On the other hand, in the pressure control step, when the measured flow rate is equal to or higher than a target flow rate, a notification to the outside that the flow rate is in a normal state may be implemented.

[0027] It may be that a substrate processing device of one embodiment of the present invention includes: a supporting unit, including a supporting plate for supporting the substrate and a rotating motor for rotating the supporting plate; and an injection unit, including one or more nozzles for injecting two fluids toward the substrate, the two fluids are a mixture of a cleaning liquid supplied from a cleaning liquid supply component and carbon dioxide supplied from a carbon dioxide supply component, the nozzle including: a first supply part, into which the cleaning liquid flows from the cleaning liquid supply component; and a second supply part, into which the carbon dioxide flows from the carbon dioxide supply component, the second supply part being arranged to surround the first supply part at the end portion of the nozzle.

[0028] The cleaning liquid supply component may include: a cleaning liquid storage tank storing cleaning liquid; a first pipe connecting the cleaning liquid storage tank and the nozzle; a constant pressure valve to keep the pressure of the cleaning liquid supplied to the nozzle constant; a flow meter to measure the amount of cleaning liquid supplied from the cleaning liquid storage tank to the nozzle; and a stop valve or a needle valve to cut off or allow the flow of the cleaning liquid.

[0029] The carbon dioxide supply component may include: a carbon dioxide storage tank storing carbon dioxide; a second pipe connecting the carbon dioxide storage tank and the nozzle; and a regulator disposed in the second pipe to discharge the carbon dioxide at a constant pressure.

[0030] The spray unit may include: a clamping member that clamps the plurality of nozzles; and a rotating member that rotates and moves the clamping member between the storage space and a position on the substrate.

[0031] A substrate processing device according to an embodiment of the present invention includes a spray unit for spraying a two-fluid mixture of a cleaning liquid and carbon dioxide onto a substrate. The higher the concentration of ozone, the higher the cleaning power of the substrate. The two-fluid is sprayed from the spray unit and until it contacts the substrate, the high concentration of ozone can be maintained. Therefore, the substrate processing device according to an embodiment of the present invention can improve the cleaning power of the substrate compared with the conventional substrate processing device.

[0032] Furthermore, the substrate processing apparatus of one embodiment of the present invention can improve the cleaning power of the substrate by using physical impact by spraying two fluids onto the substrate at high speed. In addition, the substrate processing apparatus of one embodiment of the present invention can improve the cleaning power of the substrate by using a chemical method that minimizes the reduction of the concentration of ozone using carbon dioxide. That is, the substrate processing apparatus of one embodiment of the present invention can significantly improve the cleaning power of the substrate compared with the conventional substrate processing apparatus by using both the physical method and the chemical method. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 FIG. 1 is a structural diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 2 : is a diagram showing the structure of the injection unit.

[0035] Figure 3 It is shown that the Figure 2 A diagram of the interior of the nozzle in the injection unit.

[0036] Figure 4 Observed from the U direction Figure 3 Figure 2 shows a schematic diagram of the injection unit.

[0037] Figure 5 It is a diagram showing a spray unit including a plurality of nozzles.

[0038] Figure 6 is a graph showing the solubility of ozone in water based on temperature.

[0039] Figure 7 This is a diagram showing a state in which two fluids hit foreign matter against a substrate in a substrate processing apparatus.

[0040] Figure 81 is a flow chart showing a substrate processing method according to an embodiment of the present invention.

[0041] Fig. 9 is a flow chart showing a substrate processing method according to another embodiment of the present invention.

[0042] (Explanation of Reference Numerals)

[0043] 100: substrate processing device 110: support unit

[0044] 120: Spray unit 121: Nozzle

[0045] 122: Carbon dioxide supply component 123: Cleaning liquid supply component

[0046] 130: Rotation speed measuring component 140: Flow rate measuring component

[0047] 150: Control Department DETAILED DESCRIPTION

[0048] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that a person having ordinary knowledge in the technical field to which the present invention belongs can easily implement the present invention. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0049] In order to clearly describe the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the entire specification.

[0050] In addition, in a plurality of embodiments, the same reference numerals are used for components having the same structure, and only a representative embodiment is described. In the remaining embodiments, only structures different from the representative embodiment are described.

[0051] Throughout the specification, when a part is said to be "connected" to another part, it includes not only the case of "direct connection" but also the case of "indirect connection" by placing other components between them. In addition, when a part is said to include a certain constituent element, it does not exclude other constituent elements but means that other constituent elements may be included, unless otherwise specifically stated.

[0052] All terms used herein, including technical or scientific terms, have the same meaning as commonly understood by persons having ordinary knowledge in the technical field to which the present invention belongs, unless otherwise defined. Terms that have definitions in commonly used dictionaries should be interpreted as having meanings consistent with the context of the relevant technology and not as ideal or overly formal meanings, unless explicitly defined in this application.

[0053] Reference Figures 1 to 4A substrate processing apparatus 100 according to an embodiment of the present invention includes a supporting unit 110 and a spraying unit 120 .

[0054] The support unit 110 supports the substrate W and rotates the substrate W. The support unit 110 may include a support plate 111 and a rotation motor 112 as an example.

[0055] The support plate 111 may support the substrate W. The support plate 111 may be relatively larger in size than the substrate W. For example, when the substrate W is a circular wafer, the support plate 111 may be a disk formed with a diameter larger than that of the wafer.

[0056] The rotation motor 112 may be located under the support plate 111. The rotation motor 112 may rotate the support plate 111.

[0057] If the substrate W is placed on the support plate 111 and the support plate 111 rotates, the substrate W can also rotate. At this time, if the chemical liquid is sprayed on the substrate W, the chemical liquid can spread to the outer contour of the substrate W under the centrifugal force.

[0058] The spray unit 120 includes one or more nozzles 121 for spraying two fluids of a mixed cleaning liquid and carbon dioxide toward the substrate W. In the process of spraying the two fluids toward the substrate by the spray unit 120, ultraviolet rays may be irradiated toward the substrate (see Figure 7 ).

[0059] The substrate processing apparatus 100 according to an embodiment of the present invention may include a spray unit 120 having one nozzle 121 and a spray unit 120 having a plurality of nozzles 121. Alternatively, the substrate processing apparatus 100 according to an embodiment of the present invention may include a spray unit 120 having a plurality of nozzles 121, so that only one selected one of the plurality of nozzles 121 is operated, or all of the plurality of nozzles 121 are operated.

[0060] Such a spray unit 120 may include, as an example, a nozzle 121 , a cleaning liquid supply component 123 , and a carbon dioxide supply component 122 .

[0061] The nozzle 121 can spray the cleaning liquid and carbon dioxide toward the substrate W. Figure 3 as well as Figure 4 As shown, the nozzle 121 may include a first supply part 121 a into which the cleaning liquid flows from the outside, and a second supply part 121 b into which carbon dioxide flows.

[0062] The portion of the second supply part 121b located at the end of the nozzle 121 may surround the first supply part 121a. That is, carbon dioxide may be sprayed around the cleaning liquid. Thus, carbon dioxide may be sprayed onto the substrate W while being mixed with the cleaning liquid, and the cleaning liquid may also be sprayed onto the substrate W at a relatively high speed at the spray speed of carbon dioxide.

[0063] The cleaning liquid supply component 123 is connected to the nozzle 121. The cleaning liquid supply component 123 can supply cleaning liquid to the nozzle 121. The cleaning liquid used to clean the substrate W can be ozone water. If ozone water and carbon dioxide are mixed and sprayed on the substrate W, the decomposition rate of ozone on the substrate W can be reduced by carbon dioxide.

[0064] The following reaction equation is a reaction equation when carbon dioxide and ozone water, i.e., cleaning liquid, are mixed.

[0065]

[0066]

[0067]

[0068]

[0069]

[0070] As shown in the reaction formula, carbon dioxide (CO 2 ) and the cleaning fluid, i.e., ozone water, to produce bicarbonate (HCO 3 ), bicarbonate is converted into carbonate ions (CO 3 2- ). In addition, carbonate ions can prevent ozone (O 3 ) decomposition.

[0071] The cleaning liquid supply component 123 is further described. As an example, the cleaning liquid supply component 123 may include a cleaning liquid storage tank 123a, a first pipe 123f, a constant pressure valve 123b, a flow meter 123c, a stop valve 123d and a needle valve 123e.

[0072] The cleaning liquid tank 123 a stores cleaning liquid, and the first pipe 123 f connects the cleaning liquid tank 123 a and the nozzle 121 .

[0073] The constant pressure valve 123b can keep constant the pressure of the cleaning liquid supplied to the nozzle 121. The flow meter 123c can measure the amount of the cleaning liquid supplied from the cleaning liquid tank 123a to the nozzle 121.

[0074] The stop valve 123d can cut off or allow the flow of the cleaning fluid. The needle valve 123e is a valve operated by an external force, so the user can manually cut off or allow the flow of the cleaning fluid.

[0075] Such a cleaning liquid supply member 123 can stably supply the cleaning liquid to the nozzle 121 .

[0076] The carbon dioxide supply component 122 may be connected to the nozzle 121 to supply carbon dioxide to the nozzle 121. Such a carbon dioxide supply component 122 may include, for example, a carbon dioxide storage tank 122a, a second pipe 122c, and a regulator 122b.

[0077] The carbon dioxide storage tank 122a stores carbon dioxide. The second pipe 122c connects the carbon dioxide and the nozzle 121. The regulator 122b can discharge carbon dioxide from the carbon dioxide storage tank 122a at a constant pressure.

[0078] Such a carbon dioxide supplying member 122 can stably supply carbon dioxide to the nozzle 121 .

[0079] On the other hand, when the injection unit 120 includes a plurality of nozzles 121 , the regulators 122 b may be connected to the plurality of nozzles 121 , respectively, and the injection speeds of the two fluids injected from the nozzles 121 may be appropriately controlled by the respective regulators 122 b .

[0080] Furthermore, the spray unit 120 may include, as an example, a clamping member 124 and a rotating member 125 (see Figure 5 The clamping member 124 clamps the plurality of nozzles 121. The rotating member 125 can rotate the clamping member 124.

[0081] When the nozzle 121 is not used, the rotating member 125 moves the clamping member 124 to a storage space (not shown), and when the nozzle 121 is used, the rotating member 125 rotates the clamping member 124 to be positioned on the substrate W. However, the rotating member 125 and the clamping member 124 are not limited to being included only when the injection unit 120 has a plurality of nozzles 121, and the clamping member 124 and the rotating member 125 may also be included when the injection unit 120 has a single nozzle 121.

[0082] On the other hand, it is preferable that, during the process of ejecting the two fluids onto the substrate W, the interval H between the nozzle 121 and the substrate W is appropriately maintained (see Figure 1 ). When the distance H between the nozzle 121 and the substrate W is too far, the ejection speed of the two fluids ejected from the nozzle is reduced and it becomes difficult for the two fluids to strongly hit the substrate W, so that the reliability of removing foreign matter on the substrate W may be reduced.

[0083] On the contrary, if the distance H between the nozzle 121 and the substrate W is short, the ejection speed of the two fluids ejected from the nozzle will not be greatly reduced, and the two fluids can hit the substrate W strongly, so the foreign matter T on the substrate W can be cleanly removed.

[0084] Here, the interval H between the nozzle 121 and the substrate W may be changed in various ways according to the design of the substrate processing apparatus 100 , and is therefore not limited to a specific value.

[0085] On the other hand, although not shown in the figure, the substrate processing apparatus 100 according to an embodiment of the present invention may include a chemical solution recovery unit.

[0086] The liquid medicine recovery unit is disposed adjacent to the support unit 110 to recover the liquid medicine scattered from the support unit 110. In more detail, the liquid medicine recovery unit may be disposed around the entire circumference of the support unit 110 to recover the liquid medicine scattered from the support unit 110.

[0087] Such a liquid medicine recovery unit separates and recovers different liquid medicines from the liquid medicines used in the process. To this end, the liquid medicine recovery unit may include a plurality of inlets for each type of liquid medicine to flow in. Each of the plurality of inlets may be arranged in a row in the vertical direction. That is, each inlet may be located at a different height from each other.

[0088] During the process of processing the substrate W, various types of chemical liquids may flow into and be stored in a specific space of the chemical liquid recovery unit. For example, the chemical liquids flowing into the various inlets may be provided to an external chemical liquid regeneration unit (not shown) through a recovery pipeline (not shown) for reuse. The chemical liquid regeneration unit may be a device that performs concentration adjustment, temperature adjustment, and filtering of contaminants on the used chemical liquid to regenerate the chemical liquid into a reusable chemical liquid.

[0089] Due to the generation of particles and the like during the processing of the substrate W, pollutants may be generated in the chemical solution recovery unit, or pollutants such as fume may be generated from the residual chemical solution. Such pollutants are regenerated by the chemical solution regeneration unit, thereby preventing the substrate W from being contaminated by the contaminated chemical solution in subsequent processes.

[0090] Such a chemical liquid recovery unit may be a unit included in a general substrate processing apparatus, and thus a detailed description thereof is omitted.

[0091] On the other hand, the substrate processing apparatus 100 according to an embodiment of the present invention may further include a rotation speed measuring unit 130 and a control unit 150 .

[0092] The rotation speed measuring unit 130 may measure the rotation speed of the portion of the support unit 110 that rotates the substrate W. In more detail, the rotation speed measuring unit 130 may be connected to the rotation motor 112 of the support unit 110 .

[0093] The rotation speed measuring unit 130 may receive information on the rotation speed from the rotation motor 112 to indirectly detect the rotation speed of the substrate W. Alternatively, the rotation speed measuring unit 130 may be an RPM sensor that measures the rotation speed of the support plate 111 .

[0094] The control unit 150 may selectively control the number of the nozzles 121 based on the rotation speed measured by the rotation speed measuring unit 130 .

[0095] In more detail, when the rotation speed measured by the rotation speed measuring unit 130 is lower than the target rotation speed, the control unit 150 may spray the two fluids toward the substrate W using the plurality of nozzles 121 .

[0096] On the other hand, when the two fluids are sprayed only toward the center of the substrate W by one nozzle 121 while the substrate W rotates at a low speed, centrifugal force may not be obtained to diffuse the two fluids to the entire substrate W. As a result, the two fluids may not diffuse to the entire substrate W and may form puddles.

[0097] However, in a substrate processing device 100 of one embodiment of the present invention, when the substrate W rotates at a low speed, the injection unit 120 having multiple nozzles 121 injects two fluids toward the entire area of ​​the substrate W, so that a sufficient amount (thickness) of cleaning liquid can contact the center and entire edge of the substrate W.

[0098] On the other hand, contrary to the above, when the rotation speed measured by the rotation speed measuring unit 130 is equal to or higher than the target rotation speed, the control unit 150 may use one nozzle 121 to spray two fluids toward the substrate W. When the substrate W rotates at a high speed, the cleaning liquid can be quickly spread to the entire substrate W even if it is sprayed only to the center of the substrate W.

[0099] Furthermore, since the cleaning liquid is sprayed onto the substrate W using one nozzle 121 , the consumption of the cleaning liquid can be minimized, thereby reducing the cost of processing the substrate W.

[0100] On the other hand, the substrate processing apparatus 100 according to an embodiment of the present invention may include a flow rate measuring unit 140 and a control unit 150 .

[0101] The flow rate measuring component 140 may be provided in the injection unit 120. In more detail, the flow rate measuring component 140 may be provided on the second pipe 122c included in the aforementioned carbon dioxide supply component 122. Such a flow rate measuring component 140 may measure the flow rate of the two fluids.

[0102] The control unit 150 may control the pressure of the carbon dioxide mixed with the cleaning fluid based on the flow rates of the two fluids measured by the flow rate measuring unit 140 .

[0103] For example, when the flow rate measured by the flow rate measuring unit 140 is less than the target flow rate, the control unit 150 can increase the pressure of the carbon dioxide mixed with the cleaning fluid. The cleaning fluid and the carbon dioxide are simultaneously sprayed from the nozzle 121, so the spray speed of the cleaning fluid can be proportional to the pressure of the carbon dioxide supplied to the nozzle 121.

[0104] By increasing the pressure of carbon dioxide in this way, the two fluids can be more strongly sprayed onto the substrate W. The two fluids sprayed onto the substrate W with great force can physically hit the foreign matter on the substrate W. Thus, the foreign matter on the substrate W can be easily detached from the substrate W.

[0105] Furthermore, the substrate processing apparatus 100 according to an embodiment of the present invention can supply a cleaning liquid in an amount (thickness) sufficient to clean the substrate W onto the substrate W, compared to a conventional substrate processing apparatus using steam.

[0106] In contrast to the above, when the flow rate measured by the flow rate measuring component 140 is greater than the target flow rate, the control unit 150 may implement a reminder to the outside that the flow rate is in a normal state. The measured flow rate being greater than the target flow rate means that the two fluids are ejected from the ejection unit 120 at a speed that can remove foreign matter.

[0107] Therefore, the control unit 150 may blink an LED that may be provided outside the substrate processing apparatus or output a text indicating a normal state on a display screen to inform the user. The user can confirm that the substrate processing apparatus 100 is operating normally through such a notification event.

[0108] On the other hand, unlike the above, when the two fluids are sprayed from the spray unit 120 at low pressure and low speed onto the substrate W, the two fluids cannot hit the substrate W strongly and may not be able to fully clean the substrate W. However, the substrate processing apparatus 100 according to an embodiment of the present invention includes a flow rate measuring unit 140 and a control unit 150, and can spray the two fluids onto the substrate W with strong force.

[0109] Therefore, the substrate processing apparatus 100 according to an embodiment of the present invention can spray the two fluids onto the substrate W at a high speed and improve the cleaning force of the substrate W by physical impact.

[0110] In addition, the substrate processing apparatus 100 according to an embodiment of the present invention can improve the cleaning power of the substrate W by using a chemical method that minimizes the reduction of the concentration of ozone by using carbon dioxide. That is, the substrate processing apparatus 100 according to an embodiment of the present invention can significantly improve the cleaning power of the substrate W compared with the conventional substrate processing apparatus by using both the physical method and the chemical method.

[0111] On the other hand, the temperature of the cleaning liquid used in the substrate processing apparatus 100 of one embodiment of the present invention can be included in the range of 1 degree to 10 degrees. The substrate processing apparatus 100 of one embodiment of the present invention is different from the conventional substrate processing apparatus in that the cleaning liquid and carbon dioxide are mixed and then directly sprayed, rather than heating the cleaning liquid and spraying it in the form of steam onto the substrate W. Therefore, the substrate processing apparatus 100 of one embodiment of the present invention can spray the cleaning liquid onto the substrate W while maintaining a low temperature.

[0112] Reference Figure 6 , A is ozone water with an ozone concentration of 1%, and B is ozone water with an ozone concentration of 2%. As shown in the graph, generally speaking, the lower the temperature of the ozone water, the more the solubility of water in ozone increases.

[0113] The substrate processing apparatus 100 according to one embodiment of the present invention sprays two fluids mixed with low-temperature cleaning liquid and carbon dioxide onto the substrate W, so that the two fluids with high ozone concentration can remove foreign matter on the surface of the substrate W. That is, the substrate processing apparatus 100 according to one embodiment of the present invention can improve the cleaning power of the substrate W compared with the conventional substrate processing apparatus.

[0114] As described above, the substrate processing apparatus 100 of one embodiment of the present invention includes a spray unit 120 that sprays two fluids mixed with a cleaning liquid and carbon dioxide toward the substrate W. The higher the concentration of ozone, the higher the cleaning power of the substrate W. The two fluids are sprayed from the spray unit 120 until they contact the substrate W, and the high concentration of ozone can be maintained. Therefore, the substrate processing apparatus 100 of one embodiment of the present invention can improve the cleaning power of the substrate W compared with the conventional substrate processing apparatus.

[0115] Furthermore, the substrate processing apparatus 100 according to one embodiment of the present invention can improve the cleaning power of the substrate W by using physical impact by spraying two fluids at high speed onto the substrate W. In addition, the substrate processing apparatus 100 according to one embodiment of the present invention can improve the cleaning power of the substrate W by using a chemical method that minimizes the reduction of the concentration of ozone by using carbon dioxide. That is, the substrate processing apparatus 100 according to one embodiment of the present invention can significantly improve the cleaning power of the substrate W compared with the conventional substrate processing apparatus by using both the physical method and the chemical method.

[0116] Hereinafter, a substrate processing method for processing a substrate using the aforementioned substrate processing apparatus 100 will be described.

[0117] Reference Figure 8 A substrate processing method (S100) according to an embodiment of the present invention includes a substrate rotating step (S110), a rotation speed measuring step (S120), a nozzle quantity determining step (S130) and a two-fluid ejecting step (S150).

[0118] The substrate rotating step (S110) rotates the substrate. If the support plate of the support unit rotates, the substrate can also rotate together with the support plate.

[0119] The rotation speed measuring step (S120) measures the rotation speed of the substrate.

[0120] The nozzle number determination step (S130) sets the number of nozzles based on the measured rotation speed of the substrate. In the nozzle number determination step (S130), when the measured rotation speed of the substrate is lower than the target speed, a plurality of nozzles may be selected (S141). Conversely, in the nozzle number determination step (S130), when the measured rotation speed of the substrate is higher than the target speed, one nozzle may be selected (S142).

[0121] The two-fluid spraying step (S150) sprays a two-fluid mixture of a cleaning liquid and carbon dioxide onto the substrate.

[0122] Reference Fig. 9 , the substrate processing method (S200) of another embodiment of the present invention may further include a flow rate measuring step (S160) and a pressure controlling step (S170).

[0123] The flow rate measuring step (S160) can measure the flow rates of the two fluids.

[0124] The pressure controlling step (S170) may control the pressure of the supplied carbon dioxide based on the measured flow rate.

[0125] In the pressure control step (S170), when the measured flow rate is less than the target flow rate, the pressure of the carbon dioxide mixed with the cleaning fluid can be increased (S180). On the contrary, in the pressure control step (S170), when the measured flow rate is greater than the target flow rate, a reminder to inform the outside that the flow rate is in a normal state can be implemented (S190).

[0126] The effects and detailed description of the substrate processing method (S200) of the present invention have been described in the above-described substrate processing apparatus, and thus detailed description thereof will be omitted.

[0127] The above describes a plurality of embodiments of the present invention. The drawings and detailed descriptions of the inventions referred to so far are merely illustrative of the present invention and are only used for the purpose of illustrating the present invention. They are not used to limit the meaning or the scope of the present invention as described in the claims. Therefore, a person with ordinary knowledge in the technical field can understand that various modifications and other equivalent embodiments can be implemented according to the embodiments. Therefore, the true technical protection scope of the present invention should be determined by the technical concept of the attached claims.

Claims

1. A substrate processing device, comprising: A supporting unit supports the substrate and rotates the substrate; A spray unit, comprising one or more nozzles, wherein the nozzles spray a mixture of a cleaning liquid and carbon dioxide onto the substrate; a rotation speed measuring means for measuring a rotation speed of a portion of the support unit that rotates the substrate; as well as a control unit that selectively controls the number of the nozzles based on the rotation speed measured by the rotation speed measuring unit, The cleaning fluid is ozone water, The temperature of the cleaning liquid is included in the range of 1 degree to 10 degrees.

2. The substrate processing apparatus according to claim 1, wherein: The injection unit comprises: a cleaning liquid supply component connected to the nozzle and supplying cleaning liquid to the nozzle; and The carbon dioxide supply component is connected to the nozzle and supplies carbon dioxide to the nozzle.

3. The substrate processing apparatus according to claim 1, wherein: When the rotation speed measured by the rotation speed measuring unit is lower than the target rotation speed, the control unit sprays the two fluids toward the substrate using the plurality of nozzles.

4. The substrate processing apparatus according to claim 1, wherein: When the rotation speed measured by the rotation speed measuring unit is equal to or higher than the target rotation speed, the control unit sprays two fluids toward the substrate using one nozzle.

5. The substrate processing apparatus according to claim 1, wherein: The substrate processing device comprises: A flow rate measuring component, disposed on the injection unit, and measuring the flow rates of the two fluids; The control unit controls the pressure of the carbon dioxide mixed with the cleaning fluid based on the flow rates of the two fluids measured by the flow rate measuring means.

6. The substrate processing apparatus according to claim 5, wherein: When the flow rate measured by the flow rate measuring unit is lower than the target flow rate, the control unit increases the pressure of the carbon dioxide mixed with the cleaning fluid.

7. The substrate processing apparatus according to claim 5, wherein: When the flow velocity measured by the flow velocity measuring means is equal to or higher than a target flow velocity, the control unit performs a notification to the outside to inform that the flow velocity is in a normal state.

8. A substrate processing method, using the substrate processing apparatus according to claim 1 to process a substrate, the substrate processing method comprising: a substrate rotating step, rotating the substrate; a rotation speed measuring step of measuring the rotation speed of the substrate; a nozzle number determination step of setting the number of nozzles based on the measured rotation speed of the substrate; and In the two-fluid spraying step, two fluids mixed with the cleaning liquid and carbon dioxide are sprayed toward the substrate.

9. The substrate processing method according to claim 8, wherein: In the nozzle number determination step, when the measured rotation speed of the substrate is lower than a target speed, a plurality of nozzles are selected.

10. The substrate processing method according to claim 8, wherein: In the nozzle number determination step, when the measured rotation speed of the substrate is higher than a target speed, one nozzle is selected.

11. The substrate processing method according to claim 8, wherein: The substrate processing method further comprises: a flow rate measuring step, measuring the flow rates of the two fluids; and The pressure controlling step controls the pressure of the supplied carbon dioxide based on the measured flow rate.

12. The substrate processing method according to claim 11, wherein: In the pressure control step, when the measured flow rate is lower than a target flow rate, the pressure of the carbon dioxide mixed with the cleaning liquid is increased.

13. The substrate processing method according to claim 11, wherein: In the pressure control step, when the measured flow rate is equal to or higher than a target flow rate, a notification is provided to the outside to notify that the flow rate is in a normal state.

14. A substrate processing device, comprising: A supporting unit including a supporting plate for supporting the substrate and a rotary motor for rotating the supporting plate; a spray unit including one or more nozzles for spraying two fluids toward the substrate, wherein the two fluids are a mixture of a cleaning liquid supplied from a cleaning liquid supply component and carbon dioxide supplied from a carbon dioxide supply component; a rotation speed measuring means for measuring a rotation speed of a portion of the support unit that rotates the substrate; as well as a control unit that selectively controls the number of the nozzles based on the rotation speed measured by the rotation speed measuring unit, The nozzle includes: a first supply portion into which the cleaning liquid flows from the cleaning liquid supply component; and a second supply portion into which the carbon dioxide flows from the carbon dioxide supply component, The second supply portion is arranged to surround the first supply portion at the distal end portion of the nozzle, The cleaning fluid is ozone water, The temperature of the cleaning liquid is included in the range of 1 degree to 10 degrees.

15. The substrate processing apparatus according to claim 14, wherein: The cleaning liquid supply component comprises: A cleaning liquid storage tank storing cleaning liquid; A first pipeline, connecting the cleaning fluid storage tank and the nozzle; A constant pressure valve keeps the pressure of the cleaning fluid supplied to the nozzle constant; a flow meter for measuring the amount of cleaning fluid supplied from the cleaning fluid storage tank to the nozzle; and A stop valve or needle valve cuts off or allows the flow of cleaning fluid.

16. The substrate processing apparatus according to claim 14, wherein: The carbon dioxide supply component comprises: A carbon dioxide storage tank storing carbon dioxide; A second pipeline connecting the carbon dioxide storage tank and the nozzle; and The regulator is arranged in the second pipeline so as to discharge the carbon dioxide at a constant pressure.

17. The substrate processing apparatus according to claim 14, wherein: The spray unit includes: a clamping member clamping a plurality of nozzles; and a rotating member rotating the clamping member between a storage space and a position on a substrate.

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