A silicon-based true RGB display device

Abstract

The present invention discloses a silicon-based true RGB display device, wherein a mixed structure layer is arranged between an ITO anode and a hole blocking layer of the silicon-based true RGB display device; the mixed structure layer comprises a red light optical compensation layer, a hole injection layer, a hole transport layer, a common blue light emitting layer, a red light emitting layer and a green light emitting layer; wherein the red light optical compensation layer is arranged on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer; the common blue light emitting layer is arranged under the hole blocking layer, or the common blue light emitting layer is arranged on the hole transport layer; the technical solution of the present invention improves the color gamut of the silicon-based true RGB display device, and the color gamut value can be increased to more than 110%; there is no need to arrange a charge generation layer (CGL), which is beneficial to reducing the crosstalk problem in the silicon base, and only two FMMs are used in the preparation, which solves the urgent demand for high PPI of silicon-based true RGB.

Description

Technical Field

[0001] The invention belongs to the technical field of RGB display devices, and in particular relates to a silicon-based true RGB display device. Background Art

[0002] Compared with traditional AMOLED display technology, silicon-based OLED microdisplay uses single-crystal silicon chips as the substrate and uses mature CMOS technology to make its pixel size smaller and more integrated. It can be made into near-eye display products comparable to large-screen displays and has attracted widespread attention. Based on its technical advantages and broad market, silicon-based OLED microdisplay will set off a new wave of near-eye display in the military and consumer electronics fields, bringing users an unprecedented visual experience.

[0003] Most of the existing high-ppi silicon-based OLED full-color products use WOLED (white light OLED) + CF (color filter) technology, and the device structure used is generally a stacked device structure, which includes anode, hole injection layer, hole transport layer, blue light emitting layer, charge generation layer, green light emitting layer, red light emitting layer, electron transport layer, electron injection layer, cathode, and capping layer from bottom to top. Figure 3 This solution has the disadvantages of low efficiency and short life, especially after CF, the product loses at least two-thirds of its efficiency, and this disadvantage is more serious in high-brightness products. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a silicon-based true RGB display device, which can solve the problems of low performance and short life of existing silicon-based true RGB display devices.

[0005] To achieve the above purpose, the technical solution adopted by the present invention is as follows:

[0006] A silicon-based true RGB display device, wherein a mixed structure layer is arranged between an ITO anode and a hole blocking layer of the silicon-based true RGB display device;

[0007] The mixed structure layer includes a red light optical compensation layer, a hole injection layer, a hole transport layer, a common blue light emitting layer, a red light emitting layer and a green light emitting layer;

[0008] Wherein, the red light optical compensation layer is arranged on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer;

[0009] The common blue light emitting layer is disposed below the hole blocking layer, or the common blue light emitting layer is disposed above the hole transport layer.

[0010] The red light optical compensation layer is arranged with equal width to the red light emitting layer; the red light emitting layer and the green light emitting layer are arranged adjacently and in parallel.

[0011] The hole injection layer is arranged on the red light optical compensation layer and the ITO anode not covered by the red light optical compensation layer; the hole transport layer is arranged on the hole injection layer.

[0012] The material of the red light optical compensation layer is the same as that of the ITO anode.

[0013] The ITO in the anode is designed with different ITO thicknesses for different RGB pixels. The thickness of the ITO anode is used for G and B pixels, and the thickness of the ITO in the two pixels is consistent.

[0014] In one technical solution of the present invention, the common blue light emitting layer is arranged on the hole transport layer; the red light emitting layer and the green light emitting layer are arranged on the common blue light emitting layer, but the upper surface of the common blue light emitting layer is not completely covered by the red light emitting layer and the green light emitting layer; the hole blocking layer is arranged on the red light emitting layer, the green light emitting layer and the common blue light emitting layer not covered by the red light emitting layer and the green light emitting layer.

[0015] The common blue light emitting layer adopts a hole-biased blue light main material; the LUMO energy level of the common blue light emitting layer is higher than the LUMO energy levels of the red light emitting layer and the green light emitting layer, which can effectively block electron transmission and confine electrons in the light emitting layer, thereby achieving independent light emission of its R and G pixels.

[0016] The thickness of the common blue light emitting layer is 20nm to 40nm, preferably 25nm to 35nm; the thickness of the red light optical compensation layer is 65nm to 85nm;

[0017] The thickness of the red light emitting layer is 30-40 nm.

[0018] The thickness of the green light emitting layer is 30-40 nm.

[0019] The thickness of the ITO anode is 10-20 nm.

[0020] The red light emitting layer and the green light emitting layer are both evaporated using a fine metal mask, and the other film layers are all evaporated using an open mask.

[0021] In another technical solution of the present invention, the red light emitting layer and the green light emitting layer are arranged on the hole transport layer, but do not completely cover the upper surface of the hole transport layer; the common blue light emitting layer is arranged on the red light emitting layer, the green light emitting layer and the uncovered hole transport layer; the hole blocking layer is arranged on the common blue light emitting layer.

[0022] The common blue light emitting layer adopts an electron-biased blue light main material; the HOMO energy level of the common blue light emitting layer is lower than the HOMO energy levels of the red light emitting layer and the green light emitting layer, which can effectively block hole transmission and confine the holes in the light emitting layer, thereby realizing independent light emission of its R and G pixels.

[0023] The thickness of the common blue light emitting layer is 20nm to 40nm, preferably 25nm to 35nm; the thickness of the red light optical compensation layer is 65nm to 85nm.

[0024] The thickness of the red light emitting layer is 30-40 nm.

[0025] The thickness of the green light emitting layer is 30-40 nm.

[0026] The thickness of the ITO anode is 10-20.

[0027] The red light emitting layer and the green light emitting layer are both evaporated using a fine metal mask, and the other film layers are all evaporated using an open mask.

[0028] The silicon-based true RGB display device disclosed in the present invention comprises, from bottom to top, an anode, a mixed structure layer, a hole blocking layer, an electron transport layer, an electron injection layer, a cathode, and a capping layer.

[0029] A silicon-based true RGB display device is prepared by using the silicon-based true RGB display device.

[0030] Compared with the prior art, the present invention has the following beneficial effects: the present invention effectively improves the efficiency and life of silicon-based true RGB display devices by setting a common blue light-emitting layer above or below the red light-emitting layer and the green light-emitting layer, and at the same time using a red light optical compensation layer to compensate for the light emission of the red light-emitting layer; improves the color gamut of silicon-based true RGB display devices, and the color gamut value can be increased to more than 110%; and the device structure of the present invention does not require a charge generation layer (CGL), which is beneficial to reducing the crosstalk problem in the silicon base. The technical solution of the present invention can reduce the number of FMMs used from 5 to 3, solving the urgent need for high PPI of silicon-based true RGB BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1This is a schematic diagram of the structure of the silicon-based true RGB display device in Example 1;

[0032] Figure 2 This is a schematic diagram of the structure of a silicon-based true RGB display device in Example 2;

[0033] Figure 3 This is a schematic diagram of the structure of a traditional silicon-based OLED;

[0034] In the figure: 1-anode, 2-mixed structure layer, 2-1-red light optical compensation layer, 2-2-hole injection layer, 2-3-hole transport layer, 2-4-common blue light emitting layer, 2-5-red light emitting layer, 2-6-green light emitting layer, 3-hole blocking layer, 4-electron transport layer, 5-electron injection layer, 6-cathode, 7-capping layer. DETAILED DESCRIPTION

[0035] Example 1

[0036] A silicon-based true RGB display device, such as Figure 1 As shown, a mixed structure layer 2 is provided between the ITO anode 1 and the hole blocking layer 3 of the silicon-based true RGB display device;

[0037] The mixed structure layer 2 includes a red light optical compensation layer 2-1, a hole injection layer 2-2, a hole transport layer 2-3, a common blue light emitting layer 2-4, a red light emitting layer 2-5 and a green light emitting layer 2-6;

[0038] The red light optical compensation layer is disposed on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer.

[0039] The red light optical compensation layer is arranged with equal width to the red light emitting layer; the red light emitting layer and the green light emitting layer are arranged adjacently and in parallel.

[0040] The hole injection layer is arranged on the red light optical compensation layer and the ITO anode not covered by the red light optical compensation layer; the hole transport layer is arranged on the hole injection layer.

[0041] The common blue light emitting layer is arranged on the hole transport layer; the red light emitting layer and the green light emitting layer are arranged on the common blue light emitting layer, but the upper surface of the common blue light emitting layer is not completely covered by the red light emitting layer and the green light emitting layer; the hole blocking layer is arranged on the red light emitting layer, the green light emitting layer and the common blue light emitting layer not covered by the red light emitting layer and the green light emitting layer.

[0042] The common blue light emitting layer adopts a hole-biased blue light main material; the LUMO energy level of the common blue light emitting layer is higher than the LUMO energy levels of the red light emitting layer and the green light emitting layer, which can effectively block electron transmission and confine electrons in the light emitting layer, thereby achieving independent light emission of its R and G pixels.

[0043] The ITO in the anode is designed with different ITO thicknesses for different RGB pixels. The thickness of the ITO anode is used for G and B pixels, and the thickness of the ITO in the two pixels is consistent.

[0044] The material of the red light optical compensation layer is the same as that of the ITO anode.

[0045] The thickness of the shared blue light emitting layer is 20nm to 40nm, preferably 25nm to 35nm; the shared blue light emitting layer at this thickness can be used as an optical compensation layer of a green light device; in the present invention, the shared blue light emitting layer is a separate film layer, so that an ordinary opening mask can be directly used during preparation, thereby reducing the number of FMMs used.

[0046] The thickness of the red light optical compensation layer is 65nm-85nm.

[0047] The thickness of the red light emitting layer is 30-40 nm.

[0048] The thickness of the green light emitting layer is 30-40 nm.

[0049] The thickness of the ITO anode is 10-20 nm.

[0050] The red light emitting layer and the green light emitting layer are both evaporated using a fine metal mask, and the other film layers are all evaporated using an open mask.

[0051] Furthermore, the silicon-based true RGB display device disclosed in this embodiment includes, from bottom to top, an ITO anode 1, a mixed structure layer 2, a hole blocking layer 3, an electron transport layer 4, an electron injection layer 5, a cathode 6, and a capping layer 7.

[0052] Furthermore, the method for preparing the silicon-based true RGB display device disclosed in this embodiment is as follows:

[0053] (1) using an open mask to prepare a red light optical compensation layer on part of the upper surface of the ITO anode,

[0054] (2) using an open mask to prepare a hole injection layer on the upper surface of the red light optical compensation layer and the exposed ITO anode;

[0055] (3) preparing a hole transport layer on the hole injection layer using an open mask;

[0056] (4) using an opening mask on the hole transport layer to prepare a common blue light emitting layer;

[0057] (5) using a fine metal mask to prepare a red light emitting layer and a green light emitting layer on a portion of the upper surface of the common blue light emitting layer, wherein the red light emitting layer is arranged in a corresponding manner with respect to the red light optical compensation layer in equal width, and the red light emitting layer and the green light emitting layer are arranged adjacently and in parallel;

[0058] (6) using an open mask to prepare a hole blocking layer on the upper surfaces of the red light emitting layer, the green light emitting layer and the exposed common blue light emitting layer;

[0059] (7) preparing an electron transport layer on the hole blocking layer using an open mask;

[0060] (8) preparing an electron injection layer on the electron transport layer using an open mask;

[0061] (9) preparing a cathode on the electron injection layer using an open mask;

[0062] (10) A capping layer is prepared on the cathode using an open mask.

[0063] Furthermore, the preparation method is evaporation.

[0064] Furthermore, the silicon-based true RGB display device disclosed in this embodiment can be prepared into a display device.

[0065] This embodiment effectively improves the efficiency and life of the silicon-based real RGB display device by setting a common blue light-emitting layer under the red light-emitting layer and the green light-emitting layer, and at the same time uses a red light optical compensation layer to compensate the red light-emitting layer; improves the color gamut of the silicon-based real RGB display device, and the color gamut value can be increased to more than 110%; and the device structure of the present invention does not need to set a charge generation layer (CGL), which is conducive to reducing the crosstalk problem in the silicon base. In addition, the technical solution of the present invention uses only two FMMs, which solves the urgent need for high PPI of silicon-based real RGB.

[0066] Example 2

[0067] A silicon-based true RGB display device, wherein a mixed structure layer 2 is arranged between an ITO anode 1 and a hole blocking layer 3 of the silicon-based true RGB display device;

[0068] The mixed structure layer 2 includes a red light optical compensation layer 2-1, a hole injection layer 2-2, a hole transport layer 2-3, a common blue light emitting layer 2-4, a red light emitting layer 2-5 and a green light emitting layer 2-6;

[0069] The red light optical compensation layer is disposed on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer.

[0070] The red light optical compensation layer is arranged with equal width to the red light emitting layer; the red light emitting layer and the green light emitting layer are arranged adjacently and in parallel.

[0071] The hole injection layer is arranged on the red light optical compensation layer and the ITO anode not covered by the red light optical compensation layer; the hole transport layer is arranged on the hole injection layer.

[0072] The material of the red light optical compensation layer is the same as that of the ITO anode.

[0073] The ITO in the anode is designed with different ITO thicknesses for different RGB pixels. The thickness of the ITO anode is used for G and B pixels, and the thickness of the ITO in the two pixels is consistent.

[0074] The red light emitting layer and the green light emitting layer are arranged on the hole transport layer, but do not completely cover the upper surface of the hole transport layer; the common blue light emitting layer is arranged on the red light emitting layer, the green light emitting layer and the uncovered hole transport layer; the hole blocking layer is arranged on the common blue light emitting layer.

[0075] The common blue light emitting layer adopts an electron-biased blue light main material; the HOMO energy level of the common blue light emitting layer is lower than the HOMO energy levels of the red light emitting layer and the green light emitting layer, which can effectively block hole transmission and confine the holes in the light emitting layer, thereby realizing independent light emission of its R and G pixels.

[0076] The thickness of the common blue light emitting layer is 20nm to 40nm, preferably 25nm to 35nm; the common blue light emitting layer at this thickness can be used as an optical compensation layer of a green light device; in the present invention, the common blue light emitting layer is a separate film layer, so that a common opening mask can be directly used during preparation, thereby reducing the number of FMMs used;

[0077] The thickness of the red light optical compensation layer is 65nm-85nm.

[0078] The thickness of the red light optical compensation layer is 65nm-85nm.

[0079] The thickness of the red light emitting layer is 30-40 nm.

[0080] The thickness of the green light emitting layer is 30-40 nm.

[0081] The thickness of the ITO anode is 10-20 nm.

[0082] The red light emitting layer and the green light emitting layer are both evaporated using a fine metal mask, and the other film layers are all evaporated using an open mask.

[0083] The silicon-based true RGB display device disclosed in this embodiment includes, from bottom to top, an ITO anode 1, a mixed structure layer 2, a hole blocking layer 3, an electron transport layer 4, an electron injection layer 5, a cathode 6, and a capping layer 7.

[0084] Furthermore, the method for preparing the silicon-based true RGB display device disclosed in this embodiment is as follows:

[0085] (1) preparing a red light optical compensation layer on a portion of the upper surface of the ITO anode using an open mask;

[0086] (2) using an open mask to prepare a hole injection layer on the upper surface of the red light optical compensation layer and the exposed ITO anode;

[0087] (3) preparing a hole transport layer on the hole injection layer using an open mask;

[0088] (4) using a fine metal mask to prepare a red light emitting layer and a green light emitting layer on a portion of the upper surface of the hole transport layer, wherein the position and width of the red light emitting layer correspond to the red light optical compensation layer, and the red light emitting layer and the green light emitting layer are arranged adjacently and in parallel;

[0089] (5) using an open mask to prepare a common blue light emitting layer on the upper surfaces of the red light emitting layer, the green light emitting layer and the exposed hole transport layer;

[0090] (6) preparing a hole blocking layer on the common blue light emitting layer using an open mask;

[0091] (7) preparing an electron transport layer on the hole blocking layer using an open mask;

[0092] (8) preparing an electron injection layer on the electron transport layer using an open mask;

[0093] (9) preparing a cathode on the electron injection layer using an open mask;

[0094] (10) A capping layer is prepared on the cathode using an open mask.

[0095] The preparation method is evaporation.

[0096] The silicon-based true RGB display device disclosed in this embodiment can be prepared into a display device.

[0097] This embodiment effectively improves the efficiency and life of the silicon-based real RGB display device by setting a common blue light emitting layer on the red light emitting layer and the green light emitting layer, and at the same time uses a red light optical compensation layer to compensate the red light emitting layer; improves the color gamut of the silicon-based real RGB display device, and the color gamut value can be increased to more than 110%; and the device structure of the present invention does not need to set a charge generation layer (CGL), which is conducive to reducing the crosstalk problem in the silicon base. In addition, the technical solution of the present invention uses only two FMMs, which solves the urgent need for high PPI of silicon-based real RGB.

[0098] The detailed description of a silicon-based true RGB display device with reference to the above embodiment is illustrative rather than restrictive, and several embodiments can be listed according to the limited scope. Therefore, changes and modifications without departing from the overall concept of the present invention should fall within the scope of protection of the present invention.

Claims

1. A silicon-based true RGB display device, characterized in that: A mixed structure layer is arranged between the ITO anode and the hole blocking layer of the silicon-based true RGB display device; The mixed structure layer includes a red light optical compensation layer, a hole injection layer, a hole transport layer, a common blue light emitting layer, a red light emitting layer and a green light emitting layer; Wherein, the red light optical compensation layer is arranged on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer; The common blue light emitting layer is arranged below the hole blocking layer, or the common blue light emitting layer is arranged above the hole transport layer; The red light optical compensation layer is arranged with equal width to the red light emitting layer; the red light emitting layer and the green light emitting layer are arranged adjacently and in parallel; The hole injection layer is arranged on the red light optical compensation layer and the ITO anode not covered by the red light optical compensation layer; the hole transport layer is arranged on the hole injection layer.

2. The silicon-based true RGB display device according to claim 1, characterized in that: The common blue light emitting layer is arranged on the hole transport layer; the red light emitting layer and the green light emitting layer are arranged on the common blue light emitting layer, but the upper surface of the common blue light emitting layer is not completely covered by the red light emitting layer and the green light emitting layer; the hole blocking layer is arranged on the red light emitting layer, the green light emitting layer and the common blue light emitting layer not covered by the red light emitting layer and the green light emitting layer.

3. The silicon-based true RGB display device according to claim 2, characterized in that: The common blue light emitting layer adopts a hole-biased blue light host material; the LUMO energy level of the common blue light emitting layer is higher than the LUMO energy levels of the red light emitting layer and the green light emitting layer.

4. The silicon-based true RGB display device according to claim 1, characterized in that: The red light emitting layer and the green light emitting layer are arranged on the hole transport layer, but do not completely cover the upper surface of the hole transport layer; The common blue light emitting layer is arranged on the red light emitting layer, the green light emitting layer and the uncovered hole transport layer; and the hole blocking layer is arranged on the common blue light emitting layer.

5. The silicon-based true RGB display device according to claim 4, characterized in that: The common blue light emitting layer adopts an electron-biased blue light main material; the HOMO energy level of the common blue light emitting layer is lower than the HOMO energy levels of the red light emitting layer and the green light emitting layer.

6. The silicon-based true RGB display device according to claim 2 or 4, characterized in that: The thickness of the common blue light emitting layer is 20nm-40nm; the thickness of the red light optical compensation layer is 65nm-85nm; the red light emitting layer and the green light emitting layer are both evaporated using a fine metal mask, and other film layers are all evaporated using an open mask.

7. The silicon-based true RGB display device according to claim 2 or 4, characterized in that: The thickness of the red light emitting layer is 30-40 nm; the thickness of the green light emitting layer is 30-40 nm; and the thickness of the ITO anode is 10-20 nm.

8. The silicon-based true RGB display device according to claim 2 or 4, characterized in that: The silicon-based true RGB display device includes, from bottom to top, an ITO anode, a mixed structure layer, a hole blocking layer, an electron transport layer, an electron injection layer, a cathode, and a capping layer.

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