Method for forming nanostructure using self-assembled nucleic acid and nanostructure thereof

Abstract

The present application relates to a method for forming a nanostructure using self-assembled nucleic acid and the nanostructure thereof. The present invention discloses a method for forming a nanostructure, which includes forming a directed self-assembly of a nucleic acid structure on a patterned substrate. The patterned substrate includes a plurality of regions. Each of the regions on the patterned substrate is specifically tuned for adsorption of a specific nucleic acid structure in the directed self-assembly.

Description

[0001] The present application is a divisional application of a Chinese invention patent application entitled “Method for forming nanostructures using self-assembled nucleic acids and nanostructures thereof”, application number 201680019953.X, and application date March 11, 2016.

[0002] Priority claim

[0003] This application claims the benefit of the filing date of U.S. Patent Application No. 14 / 677,445, filed on April 2, 2015, entitled "METHODS OF FORMING NANOSTRUCTURES USING SELF-ASSEMBLED NUCLEICACIDS, AND NANOSTRUCTURES THEREOF." Technical Field

[0004] In various embodiments, the present invention is generally directed to methods of forming nanostructures using self-assembly of nucleic acids. Background Art

[0005] A continuing goal in integrated circuit manufacturing is to reduce the size of the integrated circuits. Integrated circuit size can be reduced by reducing the size and spacing of component features or structures. For example, by reducing the size and spacing of semiconductor features (e.g., storage capacitors, access transistors, access lines) of a memory device, the overall size of the memory device can be reduced while maintaining or increasing the storage capacity of the memory device.

[0006] As the size and spacing of semiconductor device features become smaller, conventional photolithography processes used to form such semiconductor device features become increasingly difficult and expensive to perform. As a result, significant challenges are encountered in the manufacture of nanostructures, specifically structures having feature sizes (e.g., critical dimensions) that are less than the resolution limit of conventional photolithography techniques (currently approximately 40 nm). Semiconductor structures having such feature sizes can be manufactured using expensive pitch division or double patterning techniques. However, the use of such processes is limited because exposure tools are extremely expensive or slow and, in addition, may not be suitable for forming structures having sizes less than 20 nm.

[0007] The development of new processes and materials useful in such processes is increasingly important to make the manufacture of small devices easier, less expensive, and more versatile.An example of a method for making small devices that addresses some of the shortcomings of conventional photolithography involves directed self-assembly (DSA) of phase-separated segmented copolymers.

[0008] While DSA segment copolymers are useful for fabricating semiconductor structures having dimensions less than 40 nm, self-assembled segment copolymer materials are generally limited to periodic patterns and may not produce nanostructures that exhibit sufficiently low defect levels.

[0009] Self-assembling nucleic acids have been studied for use in forming semiconductor devices. The specificity of complementary base pairing in nucleic acids provides self-assembling nucleic acids that can be used in self-assembling nucleic acid lithography processes.

[0010] U.S. Patent No. 8,501,923 discloses a self-assembling DNA origami structure. The DNA origami structure is formed by structural units, wherein each structural unit includes a single-stranded polynucleotide scaffold and a plurality of auxiliary / short fiber chains. The auxiliary / short fiber chains are designed to be at least partially complementary to the single-stranded polynucleotide scaffold, so that the auxiliary / short fiber chains and the single-stranded polynucleotide scaffold self-anneal into structural units. The DNA origami structure can have a size of 100nm to 200nm and a resolution of 6nm.

[0011] Arbitrary two-dimensional (2D) patterns of self-assembled nucleic acids have been reported in Wei et al., entitled "Complex shapes self-assembled from single stranded DNA tiles", Nature 485 (2012), pp. 623-627. The arbitrary 2D patterns were generated using a self-assembled DNA molecular canvas formed by DNA subunits. The DNA subunits have a size of less than 10 nm. The DNA subunits may be single stranded DNA having a size of 3 nm. The self-assembled DNA molecular canvas may have a size of 200 nm.

[0012] Surwade et al. disclose a method for forming custom-shaped inorganic oxide nanostructures by using self-assembled DNA nanostructure templates. Surwade et al., entitled "Nanoscale Growth and Patterning of Inorganic Oxides Using DNA Nanostructure Templates", Journal of the American Chemical Society (J. Am. Chem. Soc.) 135 (2013) pp. 6778-6781. The self-assembled DNA nanostructure is deposited on a substrate without alignment and then used as a template for selective deposition of inorganic oxide materials to provide an inorganic oxide nanostructure. The inorganic oxide nanostructure can be used as a hard mask for etching the substrate.

[0013] Kershner et al. disclose the placement and orientation of individual self-assembled DNA structures on lithographically patterned substrates. Kershner et al., “Placement and orientation of individual DNA shapes on lithographically patterned surfaces,” Nature Nanotechnology 4 (2009) pp. 557-561. DNA origami, in which long single strands of DNA are folded into a certain shape using shorter “staple strands,” is used as a self-assembled DNA structure. Electron beam lithography and dry oxide etching are used to create DNA origami-shaped binding sites on materials such as silicon dioxide (SiO2) and diamond-like carbon (DLC). BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A top view showing a stage of forming a directed self-assembly of a plurality of DNA structures on a patterned substrate according to one embodiment of the present invention;

[0015] Figure 2 Demonstrating directed self-assembly of a plurality of isotropic DNA structures according to one embodiment of the present invention;

[0016] Figure 3 Demonstrating directed self-assembly of a plurality of anisotropic DNA structures according to one embodiment of the present invention;

[0017] Figure 4 Demonstrating directed self-assembly of a plurality of anisotropic DNA structures according to another embodiment of the present invention;

[0018] Figure 5a is a top view of the functionalized DNA structure;

[0019] Figure 5b is a cross-sectional view of a functionalized DNA structure;

[0020] Figure 6 A semiconductor structure is shown, which includes a substrate, a sacrificial pattern material, and a spacer;

[0021] Figure 7 A patterned substrate is shown, comprising a substrate and a functionalized spacer; and

[0022] Figure 8 A semiconductor structure is shown, which includes a substrate, a functionalized spacer, and a functionalized DNA structure. DETAILED DESCRIPTION

[0023] The following description provides specific details (such as material type, material thickness, and processing conditions) to provide a comprehensive description of embodiments of the present invention. However, those skilled in the art will appreciate that embodiments of the present invention may be practiced without employing such specific details. In fact, embodiments of the present invention may be practiced in conjunction with conventional manufacturing techniques employed in the industry.

[0024] In addition, the description provided herein does not form a complete process flow for forming a nanostructure. Only the process actions and structures necessary for understanding the embodiments of the present invention are described in detail below. The additional actions of forming a complete nanostructure can be performed by conventional manufacturing techniques. In addition, the drawings attached to the application are only for illustrative purposes and are therefore not necessarily drawn to scale. The elements shared between the figures can maintain the same numerical number. In addition, although the materials described and illustrated herein can be formed into layers, the materials are not limited thereto and can be formed in other three-dimensional configurations.

[0025] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0026] As used herein, the term "substrate" means and includes a base material or structure on which additional materials are formed. The substrate may be, for example, a semiconductor substrate, a base semiconductor material on a support structure, a metal electrode, or a semiconductor substrate on which one or more materials, structures, or regions are formed. The substrate may be a conventional silicon substrate or other bulk substrate including a layer of semiconductor material. As used herein, the term "bulk substrate" means and includes not only silicon wafers, but also silicon-on-insulator (SOI) substrates (such as silicon-on-sapphire (SOS) substrates and silicon-on-glass (SOG) substrates), epitaxial layers of silicon on a base semiconductor base, or other semiconductor or optoelectronic materials (such as silicon germanium (Si 1-x Ge x , where x is a mole fraction between, for example, 0.2 and 0.8), germanium (Ge), gallium arsenide (GaAs), gallium nitride (GaN), or indium phosphide (InP), among others). In addition, when reference is made to a "substrate" in the following description, previous process actions may be performed to form a material, region, or junction in the base semiconductor structure or foundation. In one embodiment, the substrate is a silicon-containing material (e.g., a silicon substrate). The substrate may be doped or undoped.

[0027] As used herein, the term "nucleic acid" means and includes nucleotides (e.g., polynucleotides and oligonucleotides) in a polymeric form of any length, including purine bases and pyrimidine bases, or chemically modified or biochemically modified purine bases and pyrimidine bases. Nucleic acids may include portions of single-stranded sequences, double-stranded sequences, or both double-stranded sequences or single-stranded sequences. As non-limiting examples, nucleic acids may include ribonucleic acid (RNA), deoxyribonucleic acid (DNA), peptide nucleic acid (PNA), or a combination thereof. The backbone of a polynucleotide may include sugars and phosphate groups as commonly found in RNA or DNA, or modified sugars and / or phosphate groups. In addition, a polynucleotide may include modified nucleotides (e.g., methylated nucleotides and nucleotide analogs).

[0028] The disclosed embodiments generally relate to nanostructures, including directed self-assembly of nucleic acid structures on patterned substrates, and the disclosed embodiments generally relate to methods for forming the nanostructures. In some embodiments, the nucleic acid structure may be a DNA structure. Non-limiting examples of this DNA structure may include the examples described in Wei et al., as described above, or the DNA origami structures disclosed in U.S. Patent 8,501,923. The patterned substrate includes a plurality of regions. After the nucleic acid structure is brought into contact with the patterned substrate, the nucleic acid structure is adsorbed onto a specific region of the patterned substrate when guided by the interaction between the nucleic acid structure and the patterned substrate to provide directed self-assembly of the nucleic acid structure on the patterned substrate.

[0029] Thus, the nanostructure comprises a directed self-assembly of nucleic acid structures on a patterned substrate. The patterned substrate comprises regions, wherein each of the regions is configured to selectively adsorb one of the nucleic acid structures in the directed self-assembly.

[0030] As used herein, the term "directed self-assembly of multiple DNA structures" or "DSA of multiple DNA structures" refers to the self-assembly of multiple DNA structures on a patterned substrate, which is guided by the interaction between the DNA structures and the patterned substrate to achieve selective adsorption of specific DNA structures to specific areas of the patterned substrate.

[0031] like Figure 1 As shown in FIG. 1 , the DNA structure 100 may have different configurations (e.g., DNA structures A, B, C, D, E, F, G, H, I, L, M, and N). In some embodiments, the DNA structure 100 may be the DNA structure described in Wei et al., which is composed of DNA subunits having a size of less than 10 nm. In some embodiments, the DNA structure 100 may include a DNA origami having a size of 100 nm to 200 nm as disclosed in U.S. Pat. No. 8,501,923.

[0032] like Figure 1As shown in , the patterned substrate 300 includes patterned regions 310 of different configurations (e.g., patterned regions A', B', C', D', E', F', G', H', I', L', M', and N'). The patterned substrate 300 is prepared by selectively patterning a substrate to produce a plurality of regions 310, wherein each of the regions 310 is for a specific DNA structure. In some embodiments and as described in more detail below, the substrate is patterned to produce regions that display chemical specificity for the associated DNA structure. For example, regions of the patterned substrate include chemical specificity for adsorbing DNA structures (e.g., via Van der Waals, ionic interactions, and / or electrostatic interactions). In some embodiments, the substrate is patterned to produce regions having topological specificity for the associated DNA structure. For example, regions of the patterned substrate have a size and / or morphology corresponding to the size and / or morphology of the DNA structure. In some embodiments, the substrate is patterned to produce regions that display both chemical specificity and topological specificity for the associated DNA structure. As Figure 1 , region A' of patterned substrate 300 corresponds in size and / or morphology to that of DNA structure A, and region B' corresponds in size and / or morphology to that of DNA structure B. Any conventional technique may be used to pattern the substrate.

[0033] Accordingly, a method for forming a nanostructure includes forming a directed self-assembly of a nucleic acid structure on a patterned substrate. The patterned substrate includes a plurality of regions. Each of the regions on the patterned substrate is specifically tuned for adsorption of a specific nucleic acid structure in the directed self-assembly of the nucleic acid structure.

[0034] exist Figure 2 In FIG. 4 , directed self-assembly 420 is formed by nine DNA structures 120 on a patterned substrate (not shown). Figure 2 As shown in FIG. 1 , each of the DNA structures 120 has the same configuration (eg, the same length and width), with the opening 122 located in the middle of the DNA structure 120. The size of the opening 122 is sub-lithographically proportional. Figure 1In the described embodiment, the patterned substrate may include regions that correspond in size and / or morphology to the size and / or morphology of the DNA structure 120. The DNA structure 120 is isotropic (i.e., the DNA structure has the same physical properties regardless of the direction of measurement). Since the DNA structure 120 is isotropic, the DSA 420 of the DNA structure is not susceptible to orientation or sequential placement errors. Therefore, each of the nine DNA structures 120 can be adsorbed to any region of the patterned substrate and the formation of the DSA 420 requires neither orientation control nor sequential control. In addition, the patterned substrate may include regions that correspond in size and / or shape to the array of DNA structures 120.

[0035] By way of non-limiting example, in some embodiments, nine isotropic DNA structures 120 may form a 3x3 array DSA on the patterned substrate. Since each of the DNA structures 120 includes an opening 122, the DSA 420 of the DNA structures 120 may be used to create a contact hole pattern in a semiconductor device, wherein the holes have a sub-lithographic size. In some other embodiments, each of the DNA structures 120 includes a plurality of openings at a sub-lithographic pitch. The DSA 420 of the DNA structures 120 enables a larger array of sub-lithographic features or pillars at a sub-lithographic pitch.

[0036] exist Figure 3 In FIG. 1 , directed self-assembly is formed by nine anisotropic DNA structures 130 assembled into a 3×3 array on a patterned substrate (not shown). The arrow symbol on the DNA structure 130 indicates the desired orientation of the structure containing the sublithographic pattern. Figure 1 In the described embodiment, the patterned substrate may include an area corresponding to the size and / or morphology of the DNA structure 130. The DNA structure 130 is anisotropic (i.e., the DNA structure has different physical properties based on the direction of measurement). Since the DNA structure 130 is anisotropic, unless directional control is provided during the adsorption of the anisotropic DNA structure 130 to the patterned substrate, the DSA of the DNA structure 130 does not always provide the required DSA. In the case of not providing directional control, the anisotropic DNA structure 130 can be assembled into an undesired DSA 430A, wherein arrows pointing in different directions indicate directional errors. In the case of using directional control, the anisotropic DNA structure 130 can be assembled into a desired DSA 430B, wherein arrows pointing in the same direction indicate that there is no directional error. By way of non-limiting example, nine anisotropic DNA structures 130 can form a 3x3 array DSA on a patterned substrate. DSA 430B can be used to produce sub-lithographic logic gates or interconnect patterns (wherein the order is not important) in semiconductor devices.

[0037] exist Figure 4 In FIG, directed self-assembly is formed by nine anisotropic DNA structures 140 assembled into a 3×3 array on a patterned substrate (not shown). The letter symbols on the DNA structures 140 indicate that the sub-lithographic features to be transferred to the substrate require specific orientation and sequence control. The sub-lithographic features may include regular, periodic patterns or irregular (i.e., sparse) patterns that correspond to dense array features or peripheral wiring, logic, interconnects, or contacts. As for Figure 1 In the described embodiment, the patterned substrate may include an area corresponding in size and / or morphology to the size and / or morphology of the DNA structure 140. Since the DNA structure 140 is anisotropic, the DSA of the DNA structure 140 does not always provide the desired DSA unless directional control and sequence control are provided. If directional control is provided but sequence control is not provided, the anisotropic DNA structure 140 may be assembled into an undesired DSA 440A. As shown, although all letters in DSA 440A are in the desired upright orientation, DSA 440A does not provide any recognizable message. If sequence control is provided but directional control is not provided, the anisotropic DNA structure 140 may be assembled into an undesired DSA 440B. As shown, all letters in DSA 440B are in the desired order. However, DSA 440B does not provide any recognizable message because some letters are not in the desired upright orientation. When both directional control and sequential control are provided, the anisotropic DNA structure 140 can be assembled into the desired DSA 440C so that a message (e.g., "DNA DSA WIN") can be read. Figure 4 In the embodiment shown in , both orientation control and sequence control are provided during assembly of the DNA structure 140 to provide directed self-assembly 440C of multiple DNA structures with minimal orientation and sequence errors.

[0038] Accordingly, the nanostructure includes a directed self-assembly of a DNA structure on a patterned substrate. The patterned substrate includes a plurality of regions, wherein each of the regions is configured to selectively adsorb a specific DNA structure in the directed self-assembly of the DNA structure.

[0039] In some embodiments, the directed self-assembly of DNA structures is formed on the patterned substrate using directional control. In some embodiments, the directed self-assembly of DNA structures is formed on the patterned substrate using sequential control. In some embodiments, the directed self-assembly of DNA structures is formed on the patterned substrate using both directional control and sequential control.

[0040] Each of the regions on the patterned substrate corresponds to a DNA structure in the DSA of a plurality of DNA structures. The selective adsorption of the specific DNA structure to the specific region on the patterned substrate is thermodynamically driven by the energy minimization of the resulting DSA of the plurality of DNA structures. As described in more detail below, a specific DNA structure can be adsorbed to its corresponding region on the patterned substrate by achieving its lowest energy configuration. The adsorption between a specific DNA structure and its corresponding region of the patterned substrate may be energetically favorable, while the adsorption between a specific DNA structure and other regions of the patterned substrate may be energetically unfavorable.

[0041] In some embodiments and as described in more detail below, the region of the patterned substrate comprises chemical specificity for adsorption to the DNA structure (e.g., via van der Waals forces, ionic interactions, and / or electrostatic interactions). In some embodiments, the region of the patterned substrate comprises topological specificity for DNA structures. In some embodiments, the region of the patterned substrate comprises both topological and chemical specificity for DNA structures.

[0042] Figure 5a , 5b 6 to 8 show various stages in the preparation of nanostructures according to some embodiments of the present invention.

[0043] Figure 5a and 5b A top view and a cross-sectional view of a functionalized DNA structure 150 are shown, respectively. As shown, the functionalized DNA structure 150 includes a DNA structure 1000 and a plurality of functional groups "A" on the DNA structure 1000. The functional group "A" may include, but is not limited to, a phosphate linkage, a complementary RNA strand, a short DNA strand, or other reactive groups. The DNA structure 1000 may include any of the DNA structures 100, 120, 130, or 140 described above.

[0044] Figure 6 A semiconductor structure 600 is shown that includes a substrate 360, a sacrificial pattern material 610 on the substrate 360, and spacers 620. The sacrificial pattern material 610 and the spacers 620 may be formed on the substrate 360 ​​by any conventional method.

[0045] After removing the sacrificial pattern material 610 from the semiconductor structure 600, the spacers 620 on the substrate 360 ​​may be derivatized to include a functional group "B". The functional group "B" has a Figure 5a or Figure 5b The chemical specificity of the functional group "A" in the functionalized DNA structure 150.

[0046] like Figure 7 , the patterned substrate 700 includes a substrate 360 ​​and functionalized spacers 670 protruding from the substrate 360. Each of the functionalized spacers 670 includes a spacer 620 and a plurality of functional groups “B” on the spacer 620.

[0047] After the functionalized DNA structure 150 is brought into contact with the patterned substrate 700, the chemical specificity between the functional group "A" of the functionalized DNA structure 150 and the functional group "B" on the functionalized spacer 670 of the patterned substrate 700 guides the functionalized DNA structure 150 to be selectively adsorbed onto a specific area on the patterned substrate 700 to provide a semiconductor structure 800, as shown in FIG. Figure 8 The favorable interaction between the A functional group and the B functional group enables the functionalized DNA structure 150 to be selectively adsorbed onto a specific area on the patterned substrate 700.

[0048] Accordingly, a method for forming a nanostructure includes patterning a substrate to produce a patterned substrate and contacting the patterned substrate with a DNA structure. The patterned substrate includes an area. The method further includes selectively adsorbing the DNA structure to a specific area on the patterned substrate to form a self-assembly of the DNA structure on the patterned substrate.

[0049] The nanostructures of the present invention can be used in the manufacture of various semiconductor structures and devices. By way of non-limiting example, nanostructures (e.g. Figures 1 to 4 DSA 400, DSA 420, DSA 430B, or DSA 440C described in the accompanying drawings may be used to transfer sub-lithographic features of DNA structure 100, DNA structure 120, DNA structure 130, or DNA structure 140 to a substrate (e.g., for fabricating sub-lithographic feature devices, contacts, contact holes, interconnects, etc.). In some embodiments, the DSA of the DNA structure may be removed during further processing actions in the fabrication of semiconductor structures and devices. In some embodiments, the DSA of the DNA structure may be retained during further processing actions in the fabrication.

[0050] The disclosed method of forming a nanostructure uses directed self-assembly of a plurality of DNA structures and can provide a nanostructure having a size less than 40 nm and reduced defect levels. In addition, depending on the design of the DNA structure, the nanostructure can have any arbitrary structure.

[0051] It should also be understood that directed self-assembly of DNA structures is used herein to exemplify the present invention. Directed self-assembly of other nucleic acid structures (eg, directed self-assembly of RNA structures, directed self-assembly of PNA structures, etc.) can be used in the present invention.

[0052] Although the present invention is susceptible to various modifications and alternative forms, specific embodiments have been shown in the drawings and described in detail herein by way of example. However, the present invention is not intended to be limited to the specific forms disclosed. On the contrary, the present invention encompasses all modifications, equivalents and alternatives that fall within the scope of the present invention as defined by the following appended claims and their legal equivalents.

Claims

1. A method for forming a nanostructure, the method comprising: Patterning the substrate to form a patterned substrate comprising one or more regions, each of the one or more regions being adapted to adsorb a specific nucleic acid structure, and the one or more regions being configured to exhibit one or more of the following: Topological specificity for said particular nucleic acid structure; or Topological and chemical specificity for said specific nucleic acid structure; contacting the patterned substrate with a nucleic acid structure comprising the specific nucleic acid structure; as well as The specific nucleic acid structure is selectively adsorbed to the corresponding one or more regions of the patterned substrate to form a directed self-assembly of the nucleic acid structure on the patterned substrate, showing both directional control and sequential control.

2. The method of claim 1 , wherein patterning the substrate to form a patterned substrate comprises patterning the substrate to include one or more regions that correspond in one or more of size or morphology to one or more of the size or morphology of the specific nucleic acid structure. 3 . The method of claim 1 , wherein forming a directed self-assembly of nucleic acid structures on the patterned substrate comprises forming the directed self-assembly comprising sub-photolithographic openings. 4 . The method of claim 1 , wherein forming a directed self-assembly of nucleic acid structures on the patterned substrate comprises forming the directed self-assembly comprising sub-lithographic features. 5 . The method of claim 4 , wherein forming the directed self-assembly comprising sub-lithographic features on the patterned substrate comprises forming a periodic pattern of the sub-lithographic features. 6 . The method of claim 4 , wherein forming the directed self-assembly including sub-lithographic features on the patterned substrate comprises forming irregular shapes of the sub-lithographic features.

7. The method of claim 4, further comprising transferring the sub-lithographic features to the patterned substrate.

8. The method according to claim 1, wherein selectively adsorbing the specific nucleic acid structure to the corresponding one or more regions of the patterned substrate comprises selectively adsorbing a specific deoxyribonucleic acid structure to the corresponding one or more regions.

9. The method according to claim 1, wherein selectively adsorbing the specific nucleic acid structure to the corresponding one or more regions of the patterned substrate comprises selectively adsorbing a specific ribonucleic acid structure to the corresponding one or more regions.

10. The method according to claim 1, wherein the specific nucleic acid structure is selectively adsorbed to the corresponding one or more regions of the patterned substrate to form a directed self-assembly of nucleic acid structures on the patterned substrate, comprising using directional control and sequential control to selectively adsorb the specific nucleic acid structure to form the directed self-assembly of nucleic acid structures including anisotropic nucleic acid structures.

11. The method according to claim 1, wherein selectively adsorbing the specific nucleic acid structure to the corresponding one or more regions of the patterned substrate to form a directed self-assembly of nucleic acid structures on the patterned substrate comprises forming the directed self-assembly including an isotropic nucleic acid structure.

12. The method of claim 1, wherein patterning the substrate to form a patterned substrate comprising one or more regions comprises forming the one or more regions adapted to adsorb the same specific nucleic acid structure.

13. The method of claim 1, wherein patterning the substrate to form a patterned substrate comprising one or more regions comprises forming the one or more regions adapted to adsorb different specific nucleic acid structures.

14. A nanostructure comprising: Directed self-assembly of nucleic acid structures on a patterned substrate, the patterned substrate comprising regions and a specific nucleic acid structure of the directed self-assembly of nucleic acid structures selectively adsorbed to each of the regions of the patterned substrate, each of the regions corresponding to one or more of the size or morphology of the specific nucleic acid structure in one or more of size or morphology, wherein the directed self-assembly of the nucleic acid structure is formed on the patterned substrate using both directional control and sequential control.

15. The nanostructure of claim 14, wherein each of the regions is tailored to exhibit topological specificity to the particular nucleic acid structure.

16. The nanostructure of claim 14, wherein each of the regions is tailored to exhibit topological and chemical specificity to the particular nucleic acid structure.

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