Display device

Abstract

The present invention discloses a display device, comprising: a substrate; a scanning line, which is arranged on the substrate and includes a gate; a semiconductor layer, which is arranged on the gate; a drain, which is arranged on the semiconductor layer and includes an arc-shaped edge, wherein the arc-shaped edge is located outside the scanning line; an insulating layer, which is arranged on the drain; a first transparent conductive layer, which is arranged on the insulating layer and includes a slit, wherein the slit is closest to the arc-shaped edge; a second transparent conductive layer, which is located between the substrate and the first transparent conductive layer; wherein the distance between the arc-shaped edge and the second transparent conductive layer is not 0 μm.

Description

[0001] This application is a divisional application, the application number of the parent application is: 201710051990.5, the application date is: January 18, 2017, and the name is: display device. Technical Field

[0002] The present invention relates to a display device, and in particular to a display device capable of improving transmittance. Background Art

[0003] With the continuous advancement of display technology, all display devices are developing towards the trend of small size, thin thickness, light weight, etc. Therefore, the mainstream display devices on the market have developed from the previous cathode ray tube to thin displays, such as liquid crystal display devices, organic light emitting diode display devices or inorganic light emitting diode display devices. Among them, thin displays can be applied in many fields, including mobile phones, laptops, video cameras, cameras, music players, mobile navigation devices, televisions and other display devices used in daily life, most of which use these display devices.

[0004] Among them, the technology of liquid crystal display devices is quite mature and is one of the common display devices on the market; however, with the continuous development of display devices, consumers have increasingly higher requirements for the display quality of display devices, so all manufacturers have tried their best to develop display devices with higher display quality.

[0005] In the development of liquid crystal display devices, with the advent of the generation of high-resolution display devices, the transmittance of the panel is one of the important factors affecting the display quality of the display device. Therefore, all manufacturers are actively improving the transmittance and contrast of the display device to enhance its display quality.

[0006] Among them, one of the factors affecting the transmittance of the display device is the overlapping area between the common electrode and the pixel electrode; in particular, since the slit of the pixel electrode is the area that mainly affects the rotation of the display medium (such as liquid crystal molecules), the overlapping area between the common electrode and the pixel electrode located at the slit of the pixel electrode is one of the important factors affecting the transmittance of the display device.

[0007] In order to achieve better display quality, a display device with improved transmittance needs to be developed to meet the needs of consumers. Summary of the invention

[0008] The main purpose of the present invention is to provide a display device, which can improve the transmittance of the display device by adjusting the relative relationship between the transparent conductive layer and the drain electrode.

[0009] The display device provided by the present invention comprises: a substrate; a scan line, which is arranged on the substrate and includes a gate; a semiconductor layer, which is arranged on the gate; a drain, which is arranged on the semiconductor layer and includes an arc-shaped edge, wherein the arc-shaped edge is located outside the scan line; an insulating layer, which is arranged on the drain; a first transparent conductive layer, which is arranged on the insulating layer and includes a slit, wherein the slit is closest to the arc-shaped edge; and a second transparent conductive layer, which is located between the substrate and the first transparent conductive layer; wherein the distance between the arc-shaped edge and the second transparent conductive layer is not 0 μm.

[0010] In the display device provided by the present invention, the relative position between the second transparent conductive layer and the drain electrode has a special design. In the display device provided by the present invention, the voltage difference between the first transparent conductive layer and the second transparent conductive layer affects the rotation of the display medium (such as: liquid crystal molecules), and the rotation of the display medium is related to the transmittance of the display device. When the overlapping area of ​​the first transparent conductive layer and the second transparent conductive layer is larger, the area of ​​the display medium that can rotate with the voltage change can be increased, thereby improving the transmittance of the display device. If the overlapping area of ​​the second transparent conductive layer and the drain electrode is too large and overlaps with the perforation of the insulating layer, a short circuit between the first transparent conductive layer and the second transparent conductive layer will be caused. Therefore, when the spacing between the first edge and the second edge is within this range, in addition to increasing the transmittance of the display device, short circuits can also be avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a cross-sectional schematic diagram of a display device according to Embodiment 1 of the present invention;

[0012] Figure 2 A top view of a thin film transistor substrate of a display device according to Embodiment 1 of the present invention;

[0013] Figure 3 For along Figure 2 A schematic cross-sectional view of a thin film transistor substrate along a section line L1 - L2 is shown;

[0014] Figure 4 for Figure 2 A partial enlarged view of the dashed area shown;

[0015] Figure 5 A top view of a thin film transistor substrate of a display device according to Embodiment 2 of the present invention;

[0016] Figure 6 for Figure 5 A partial enlarged view of the dashed area shown;

[0017] Figure 7 A top view of a thin film transistor substrate of a display device according to Embodiment 3 of the present invention;

[0018] Figure 8 for Figure 7 A partial enlarged view of the dashed area shown;

[0019] Fig. 9 A top view of a thin film transistor substrate of a display device according to Embodiment 4 of the present invention;

[0020] FIG. 10A to FIG. 10C is a schematic diagram of a thin film transistor substrate used in a test example of the present invention;

[0021] Fig.11 This is a test result diagram of a test example of the present invention.

[0022] Description of reference numerals:

[0023] 1-Substrate 1a-Surface

[0024] 11-scan line 111-gate

[0025] 112-gate insulating layer 12-semiconductor layer

[0026] 121- third opening 13- drain

[0027] 131- second edge 132- fourth edge

[0028] 133-arc edge 134-slanted side

[0029] 14- source 15- insulation layer

[0030] 151-perforation 151a-first opening

[0031] 151b- second opening 16- first transparent conductive layer

[0032] 161-slit 17-second transparent conductive layer

[0033] 171- first edge 172- third edge

[0034] 2- Opposite substrate 3- Display medium layer

[0035] 4- Backlight module AA- Display area

[0036] A1-AreaA2-Area

[0037] B- peripheral area D- shortest distance

[0038] D'- distance D1- first distance

[0039] D2-second distance L1-L2-section line

[0040] X-first direction Y-second direction DETAILED DESCRIPTION

[0041] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0042] Example 1

[0043] Figure 1 : is a cross-sectional schematic diagram of the display device of the present embodiment. The display panel of the present embodiment includes: a substrate 1; a pair of side substrates 2, which are arranged opposite to the substrate 1; and a display medium layer 3, which is arranged between the substrate 1 and the opposite side substrate 2. The display panel of the present embodiment includes a display area AA; and a peripheral area B, which is arranged around the display area AA. In the present embodiment, the substrate 1 and the opposite side substrate 2 can be made of base materials such as glass, plastic, and flexible materials. In addition, the display medium layer 3 can be a liquid crystal layer. Therefore, in the display device of the present embodiment, a backlight module 4 can be provided under the substrate 1 to provide a light source to the display panel.

[0044] In this embodiment, different components may be disposed on the substrate 1 and the opposite substrate 2. For example, a thin film transistor unit (not shown) may be disposed on the substrate 1 to form a thin film transistor substrate; and a color filter layer and a black matrix layer (not shown) may be disposed on the opposite substrate 2 to form a color filter substrate. Alternatively, the color filter layer may be disposed on the substrate 1 to form a thin film transistor substrate (color filter on array, COA) integrated with a color filter array. Next, this embodiment will be described by taking the thin film transistor substrate having a thin film transistor unit disposed on the substrate 1 as an example.

[0045] Figure 2 is a top view of a thin film transistor substrate of a display device of this embodiment; and Figure 3 For along Figure 2 The cross-sectional diagram of the section line L1-L2 shown in FIG. Figure 2 and Figure 3As shown, the thin film transistor substrate of the display device of this embodiment includes: a substrate 1; a scan line 11, which has an extension direction (first direction X) and is arranged on the substrate 1, and the scan line 11 includes a gate 111 (a region where the thin film transistor is formed); a semiconductor layer 12, which is arranged on the gate 111, a part of the semiconductor layer 12 overlaps with the gate 111, and a part of the semiconductor layer 12 extends outside the gate 111; a drain 13 and a source 14, which are respectively arranged on the semiconductor layer 12, and the orthographic projections of the drain 13 and the source 14 on the substrate 1 are completely located within the orthographic projection of the semiconductor layer 12 on the substrate 1. The gate electrode 111, the semiconductor layer 12, the source electrode 14 and the drain electrode 13 form a thin film transistor; an insulating layer 15, including a through hole 151 and disposed on the drain electrode 13; a first transparent conductive layer 16, disposed on the insulating layer 15, and a portion of the first transparent conductive layer 16 extends into the through hole 151 and is electrically connected to the drain electrode 13; a second transparent conductive layer 17, located between the substrate 1 and the first transparent conductive layer 16, and the second transparent conductive layer 17 does not overlap with the through hole 151, more specifically, the orthographic projection of the through hole 151 on the substrate 1 does not overlap with the orthographic projection of the second transparent conductive layer 17 on the substrate 1. In addition, as Figure 3 As shown, a gate insulating layer 112 is further formed on the gate 111 .

[0046] In this embodiment and other embodiments of the present invention, the so-called "orthographic projection" is a component at Figure 1 The projection pattern formed by the opposite substrate 2 toward the substrate 1 (i.e., in a direction perpendicular to the surface 1a of the substrate 1). Figure 2 , Figures 4 to 9 In the top view of the Figure 1 The projection pattern is formed by the opposite substrate 2 toward the substrate 1 (ie, in a direction perpendicular to the surface 1a of the substrate 1).

[0047] In this embodiment and other embodiments of the present invention, the scan line 11, the source electrode 14 and the drain electrode 13 can be made of conductive materials such as metal, alloy, metal oxide, metal oxynitride, or other electrode materials. The first transparent conductive layer 16 and the second transparent conductive layer 17 can be made of transparent conductive electrode materials such as ITO, IZO or ITZO.

[0048] Figure 4 for Figure 2 A partial enlarged view of the dotted area shown. Figure 2 and Figure 4As shown, the orthographic projection of the second transparent conductive layer 17 on the substrate 1 has a first edge 171, and the orthographic projection of the drain 13 on the substrate 1 has a second edge 131, and the first edge 171 is close to the second edge 131. More specifically, in this embodiment, the shortest distance between the first edge 171 and the second edge 131 in the extending direction (first direction X) of the vertical scanning line 11 is 0 μm; in other words, the first edge 171 and the second edge 131 are partially overlapped.

[0049] like Figure 2 and Figure 4 As shown, in the display device of the present embodiment, the second transparent conductive layer 17 does not overlap with the through hole 151 of the insulating layer 15, and the first edge 171 of the second transparent conductive layer 17 is close to the second edge 131 of the drain electrode 13. In the present embodiment, the shortest distance between the first edge 171 and the second edge 131 in the extension direction (first direction X) of the vertical scanning line 11 is 0 μm. Generally speaking, the voltage difference between the first transparent conductive layer 16 and the second transparent conductive layer 17 will affect the rotation of the display medium (such as liquid crystal molecules), and the rotation of the display medium is related to the transmittance of the display device. When the area where the first transparent conductive layer 16 and the second transparent conductive layer 17 overlap is larger, the area where the display medium can rotate with the change of voltage can be increased, thereby improving the transmittance of the display device. However, if the area where the second transparent conductive layer 17 overlaps with the drain electrode 13 is too large and overlaps with the through hole 151 of the insulating layer 15, a short circuit between the first transparent conductive layer 16 and the second transparent conductive layer 17 will be caused. Therefore, in this embodiment, when the shortest distance between the first edge 171 and the second edge 131 in the extension direction (first direction X) of the vertical scan line 11 is 0-4 μm, the transmittance of the display device can be increased and short circuit can be avoided.

[0050] In addition, in this embodiment, a portion of the second transparent conductive layer 17 overlaps with the semiconductor layer 12 , but does not overlap with the drain electrode 13 .

[0051] like Figure 2 and Figure 4 As shown, in this embodiment, the second transparent conductive layer 17 further includes a third edge 172, and the third edge 172 is substantially perpendicular to the extension direction (first direction X) of the scan line 11; in other words, the extension direction of the third edge 172 is substantially the second direction Y. The third edge 172 does not overlap with the drain 13. In this embodiment and other embodiments of the present invention, "the third edge 172 is substantially perpendicular to the extension direction (first direction X) of the scan line 11" and / or "the second direction Y" is a direction that is 70 to 90 degrees with the first direction X, and preferably 80 to 90 degrees.

[0052] like Figure 3As shown, since the sidewall of the through hole 151 is an inclined sidewall, the through hole 151 has an inverted trapezoidal shape. Therefore, in this embodiment, the area A1 of the first opening 151a of the through hole 151 close to the first transparent conductive layer 16 is larger than the area A2 of the second opening 151b of the through hole 151 close to the drain 13; and the through hole 151 can expose a portion of the insulating layer 15. At the same time, by adjusting the etching conditions for forming the through hole 151, the first opening 151a and the second opening 151b can have a first shortest distance D1 and a second shortest distance D2 respectively in the extending direction (first direction X) parallel to the scanning line 11, and the first shortest distance D1 is not equal to the second shortest distance D2.

[0053] In addition, if Figure 4 As shown, the first transparent conductive layer 16 includes at least one slit 161, and the drain 13 further includes a fourth edge 132; wherein, at the overlapped portion of the drain 13 and the first transparent conductive layer 16, near the slit 161, there is an arc-shaped edge 133 between the second edge 131 and the fourth edge 132, and preferably, the fourth edge 132 is substantially perpendicular to the extension direction (first direction X) of the scan line 11. Since the transmittance of the drain 13 is relatively poor, it will affect the transmittance of the display device, so the smaller the area of ​​the drain 13, the better. Therefore, in this embodiment, when the drain 13 has this arc-shaped edge 133, the area of ​​the drain 13 can be reduced, especially the area of ​​the drain 13 near the slit 161 of the first transparent conductive layer 16 is reduced, which can further improve the transmittance of the display device.

[0054] Example 2

[0055] Figure 5 is a top view of a thin film transistor substrate of a display device of this embodiment; and Figure 6 for Figure 5 A partial enlarged view of the dotted area shown. Figure 5 and Figure 6 As shown, the thin film transistor substrate of this embodiment is similar to that of Embodiment 1, except for the following differences.

[0056] First, the structures of the drain 13 and the source 14 of the thin film transistor unit of this embodiment are slightly different from those of the first embodiment; however, the actual operation methods are similar.

[0057] Secondly, if Figure 6As shown, in this embodiment, in addition to the second transparent conductive layer 17 not overlapping with the through hole 151, the orthographic projection of the second transparent conductive layer 17 on the substrate (not shown) has a first edge 171, the orthographic projection of the drain 13 on the substrate (not shown) has a second edge 131, and the shortest distance D between the first edge 171 and the second edge 131 in the extension direction (first direction X) of the vertical scanning line 11 is greater than 0μm and less than or equal to 4μm; and preferably greater than 0μm and less than or equal to 2μm.

[0058] In this embodiment, the shortest distance D between the first edge 171 and the second edge 131 in the extension direction (first direction X) of the vertical scanning line 11 is greater than 0 μm and less than or equal to 4 μm (preferably greater than 0 μm and less than or equal to 2 μm). In this way, the same purpose as in Example 1 of increasing the transmittance of the display device and avoiding the occurrence of short circuits can be achieved.

[0059] In addition, in this embodiment, Figure 6 As shown, part of the second transparent conductive layer 17 overlaps with the semiconductor layer 12 , but does not overlap with the drain electrode 13 .

[0060] Furthermore, if Figure 5 As shown, the semiconductor layer 12 includes a third opening 121, and the third opening 121 exposes the edge 111a of the gate electrode 111. When the semiconductor layer 12 has the third opening 121, a large area of ​​the semiconductor layer 12 not covered by the source electrode 14 or the drain electrode 13 will not be exposed in the area outside the gate electrode 111 of the scan line 11, so that the light leakage current can be prevented from being generated and the operation of the thin film transistor can be avoided.

[0061] Example 3

[0062] Figure 7 is a top view of a thin film transistor substrate of a display device of this embodiment; and Figure 8 for Figure 7 A partial enlarged view of the dotted area shown. Figure 7 and Figure 8 As shown, the thin film transistor substrate of this embodiment is similar to that of Embodiment 1, except for the following differences.

[0063] First, the structures of the drain 13 and the source 14 of the thin film transistor unit of this embodiment are slightly different from those of the first embodiment; however, the actual operation methods are similar.

[0064] Secondly, if Figure 8As shown, in this embodiment, in addition to the second transparent conductive layer 17 not overlapping with the through hole 151, the orthographic projection of the second transparent conductive layer 17 on the substrate (not shown) has a first edge 171, the orthographic projection of the drain 13 on the substrate (not shown) has a second edge 131, and the shortest distance D between the first edge 171 and the second edge 131 in the extension direction (first direction X) perpendicular to the scanning line 11 is greater than 0 μm and less than or equal to 4 μm; and preferably greater than 0 μm and less than or equal to 2 μm.

[0065] like Figure 8 As shown, in this embodiment, part of the second transparent conductive layer 17 overlaps with the semiconductor layer 12 and the drain 13. In particular, the first edge 171 of the second transparent conductive layer 17 is located on the drain 13. In addition, the second transparent conductive layer 17 further includes a third edge 172, and the third edge 172 is substantially perpendicular to the extension direction (first direction X) of the scan line 11; in other words, the extension direction of the third edge 172 is substantially the second direction Y. The third edge 172 overlaps with the drain 13.

[0066] Furthermore, if Figure 7 As shown, the semiconductor layer 12 includes a third opening 121 , and the third opening 121 exposes an edge 111 a of the gate 111 .

[0067] Example 4

[0068] Fig. 9 FIG. 1 is a top view of a thin film transistor substrate of a display device of this embodiment. Fig. 9 As shown, the thin film transistor substrate of this embodiment is similar to that of embodiments 1 and 2, with the main difference being that, in this embodiment, the first transparent conductive layer 16 includes at least one slit 161, and the drain 13 further includes a fourth edge 132. Preferably, the fourth edge 132 is substantially perpendicular to the extension direction (first direction X) of the scan line 11; wherein, in the overlapping portion of the drain 13 and the first transparent conductive layer 16, near the slit 161, an inclined side edge 134 is provided between the second edge 131 and the fourth edge 132, and the angles between the inclined side edge 134 and the second edge 131 and the fourth edge 132 are respectively obtuse angles.

[0069] Although the drain electrode 13 of the present embodiment has an inclined side edge 134, the drain electrode 13 of the first embodiment has an arc-shaped edge 133 (eg, Figure 4 However, whether it is the inclined side edge 134 of this embodiment or the curved edge 133 of embodiment 1, the purpose of improving the transmittance of the display device can be achieved.

[0070] Test Case

[0071] As described in Examples 1 to 4 above ( Figure 4 , Figure 6, Figure 8 and Fig. 9 As shown in FIG. 1 , when the shortest distance D between the first edge 171 of the second transparent conductive layer 17 and the second edge 131 of the drain electrode 13 in the extension direction (first direction X) of the vertical scanning line 11 is between 0 μm and 4 μm (preferably between 0 μm and 2 μm), the purpose of increasing the transmittance of the display device and avoiding the occurrence of short circuit can be achieved at the same time. In this test example, the effect of the distance between the first edge 171 of the second transparent conductive layer 17 and the second edge 131 of the drain electrode 13 on the transmittance of the thin film transistor substrate is simulated; at the same time, the effect of the distance between the third edge 172 of the second transparent conductive layer 17 and the fourth edge 132 of the drain electrode 13 on the transmittance of the thin film transistor substrate is further simulated.

[0072] FIG. 10A to FIG. 10C is a schematic diagram of a thin film transistor substrate used in this test example. Fig. 10A It shows the situation that part of the second transparent conductive layer 17 overlaps with the drain electrode 13, especially, the first edge 171 of the second transparent conductive layer 17 is located on the drain electrode 13; Fig. 10B It represents the situation that the second transparent conductive layer 17 does not overlap with the drain electrode 13; and Fig. 10C It represents the situation where part of the second transparent conductive layer 17 overlaps with the drain electrode 13, in particular, the third edge 172 of the second transparent conductive layer 17 is located on the drain electrode 13. Among them, the distance between the first edge 171 of the second transparent conductive layer 17 and the second edge 131 of the drain electrode 13 is the shortest distance D, and the distance between the third edge 172 of the second transparent conductive layer 17 and the fourth edge 132 of the drain electrode 13 is the distance D'. In this test example, when the first edge 171 and the second edge 131 coincide, the shortest distance D is 0; when the first edge 171 moves upward and is located on the drain electrode 13, the shortest distance D is a negative value (such as Fig. 10A When the first edge 171 moves downward and is not on the drain 13, the shortest distance D is a positive value (as shown in Fig. 10B or Fig. 10C In addition, when the third edge 172 coincides with the fourth edge 132, the distance D' is 0; when the third edge 172 moves to the right and is not on the drain 13, the distance D' is a positive value (as shown in FIG. Fig. 10A or Fig. 10B When the third edge 172 moves to the left and is located on the drain 13, the distance D' is a negative value (such as Fig. 10C shown).

[0073] The simulation results are as follows Fig.11The results show that, in terms of the relationship between the first edge 171 of the second transparent conductive layer 17 and the second edge 131 of the drain electrode 13, when the second transparent conductive layer 17 overlaps with the drain electrode 13, the shortest distance D between the first edge 171 and the second edge 131 has little effect on the transmittance; however, when the second transparent conductive layer 17 does not overlap with the drain electrode 13, as the shortest distance D between the first edge 171 and the second edge 131 increases, the transmittance begins to drop significantly. In terms of the relationship between the third edge 172 of the second transparent conductive layer 17 and the fourth edge 132 of the drain electrode 13, when the second transparent conductive layer 17 overlaps with the drain electrode 13, the distance D' between the third edge 172 and the fourth edge 132 has little effect on the transmittance; similarly, when the second transparent conductive layer 17 does not overlap with the drain electrode 13, as the distance D' between the third edge 172 and the fourth edge 132 increases, although the transmittance also decreases, the decrease is not large.

[0074] The results of this test example show that, preferably, when the first edge 171 of the second transparent conductive layer 17 is located on the drain electrode 13 , a better transmittance can be obtained.

[0075] In the present invention, the display device manufactured in the above-mentioned embodiment can be used in combination with a touch panel to serve as a touch display device. At the same time, the display device or touch display device manufactured in the above-mentioned embodiment of the present invention can be applied to any electronic device that needs a display screen known in the art, such as a display, a mobile phone, a notebook computer, a video camera, a camera, a music player, a mobile navigation device, a television, and other electronic devices that need to display images.

[0076] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A display device, comprising: substrate; A scan line, disposed on the substrate and extending along a first direction, wherein the scan line includes a gate and an edge; A semiconductor layer is disposed on the gate; A drain electrode, wherein the semiconductor layer is disposed between the substrate and the drain electrode, and when viewed from a top view, the drain electrode comprises a U-shaped structure and an arc-shaped edge, and the arc-shaped edge is located outside the scan line; A source electrode is disposed on the semiconductor layer, and the source electrode comprises an M-type structure, wherein the orthographic projections of the drain electrode and the source electrode on the substrate are completely located within the orthographic projection of the semiconductor layer on the substrate; An insulating layer, disposed on the drain electrode; A first transparent conductive layer, disposed on the insulating layer and comprising a slit, wherein the slit is closest to the arc-shaped edge; A second transparent conductive layer is located between the substrate and the first transparent conductive layer, wherein a portion of the second transparent conductive layer overlaps with the semiconductor layer, and a portion of the second transparent conductive layer overlaps with the drain electrode; Wherein, the distance between at least a portion of the arc-shaped edge and the second transparent conductive layer is not 0 μm; Wherein, when viewed from the top, at least a portion of the semiconductor layer is located outside the scan line and extends along a second direction, which is different from the first direction, wherein the semiconductor layer includes a third opening, and the third opening exposes the edge of the scan line. 2 . The display device according to claim 1 , wherein the first transparent conductive layer at least partially overlaps with the drain electrode. The display device according to claim 1 , wherein the arc-shaped edge does not overlap with the second transparent conductive layer. 4 . The display device according to claim 1 , wherein the insulating layer has a through hole, and the first transparent conductive layer is electrically connected to the drain electrode through the through hole. The display device according to claim 4 , wherein the second transparent conductive layer does not overlap with the through hole.

6. The display device according to claim 1, wherein the second transparent conductive layer has a first edge, the drain has a second edge close to the first edge, wherein a distance between the first edge and the second edge in a direction perpendicular to the first direction is greater than 0 μm and less than or equal to 4 μm. 7 . The display device according to claim 6 , wherein the drain comprises a third edge perpendicular to the first direction, and the arc-shaped edge connects the second edge and the third edge. 8 . The display device according to claim 7 , wherein the distance between the third edge and the second transparent conductive layer is not 0 μm.

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