Graphite boat sheet for silicon wafer battery coating, graphite boat and coating method

Abstract

The present invention provides a graphite boat for coating shingles and half-chip large-size silicon wafer batteries, comprising a graphite boat body and a separator, wherein a plurality of silicon wafer placement areas are arranged on the graphite boat body, and the plurality of silicon wafer placement areas are arranged in sequence along the length direction of the graphite boat body, the separator is arranged at the silicon wafer placement area, and a clamping point is arranged around the silicon wafer placement area. The beneficial effect of the present invention is that it is suitable for coating a half-chip silicon wafer, and the structure of the silicon wafer placement area is changed without changing the overall structure of the graphite boat, thereby reducing the modification cost and facilitating the coating of large-size silicon wafers.

Description

Technical Field

[0001] The present invention belongs to the technical field of solar cells, and in particular relates to a graphite boat sheet, a graphite boat and a coating method for silicon wafer battery coating, in particular to a graphite boat sheet, a graphite boat and a coating method for shingled and half-chip large-size silicon wafer battery coating. Background Art

[0002] With the surge in demand for high-power solar photovoltaic modules in the solar photovoltaic power generation market, shingled and half-cell solar photovoltaic modules have become the mainstream products of high-power modules. Since large-sized whole silicon wafers (such as M9 190x190mm, M10200x200mm, M12 210x210mm) have exceeded the diameter limit of existing tubular coating furnaces, coating cannot be performed, and the tubular coating furnaces need to be modified, which increases the modification cost. Summary of the invention

[0003] In view of the above problems, the problem to be solved by the present invention is to provide a graphite boat sheet, a graphite boat and a coating method for silicon wafer battery coating, which are particularly suitable for coating half a silicon wafer. Without changing the overall structure of the graphite boat, the structure of the silicon wafer placement area is changed, thereby reducing the modification cost and facilitating the coating of large-size silicon wafers.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention is: a graphite boat for coating shingled and half-cut large-size silicon wafer batteries, including a graphite boat body and a separator. The graphite boat body is provided with a plurality of silicon wafer placement areas, and the plurality of silicon wafer placement areas are arranged in sequence along the length direction of the graphite boat body. The separator is arranged at the silicon wafer placement area, and card points are provided on the surrounding sides of the silicon wafer placement area.

[0005] Furthermore, the silicon wafer placement area is a rectangular through-hole structure, and the length of the silicon wafer placement area is greater than the width.

[0006] Furthermore, the length of the silicon wafer placement area is adapted to the length of half of the silicon wafer, and the width of the silicon wafer placement area is adapted to the width of half of the silicon wafer.

[0007] Furthermore, the separator is a cross-shaped structure and is arranged on the silicon wafer placement area.

[0008] A graphite boat for coating shingled and half-cut large-size silicon wafer batteries comprises a plurality of the above-mentioned graphite boats for coating shingled and half-cut large-size silicon wafer batteries, connecting rods and baffles, wherein the plurality of graphite boats are connected to the connecting rods, the baffles are arranged on the connecting rods, and the baffles are arranged between adjacent graphite boats, and the plurality of graphite boats are arranged in parallel.

[0009] Furthermore, the barrier member is a ceramic sleeve, and the length of the ceramic sleeve is 10.48-10.52 mm.

[0010] A coating method for shingled, half-cut large-size silicon wafer cells comprises the following steps:

[0011] S1: cutting the silicon wafer into two parts to form half silicon wafers;

[0012] S2: insert half of the silicon wafer and load it on the graphite boat;

[0013] S3: coating the half silicon wafer, and performing coating multiple times during the coating process of the half silicon wafer.

[0014] Furthermore, during the coating process of half a silicon wafer, during the first coating, silane and ammonia are introduced according to the first coating temperature and the first coating pressure, and the first coating time is set, wherein:

[0015] The first coating time is 120-180s, the first coating pressure is 1500-1900mTorr, the flow rate of silane is 850-1150sccm, the flow rate of ammonia is 4-6slm, and the first coating temperature is 400-500°C.

[0016] Furthermore, during the coating process of half a silicon wafer, during the second coating, silane and ammonia are introduced according to the second coating temperature and the second coating pressure, and the second coating time is set, wherein:

[0017] The second coating time is 180-240s, the second coating pressure is 1500-1900mTorr, the flow rate of silane is 470-770sccm, the flow rate of ammonia is 4.8-8.8slm, and the second coating temperature is 400-500°C.

[0018] Furthermore, during the coating process of half a silicon wafer, during the third coating, silane and ammonia are introduced according to the third coating temperature and the third coating pressure, and the third coating time is set, wherein:

[0019] The third coating time is 270-370s, the second coating pressure is 1500-1900mTorr, the flow rate of silane is 310-610sccm, the flow rate of ammonia is 2.4-6.4slm, and the third coating temperature is 400-500°C.

[0020] Due to the adoption of the above technical solution, the structure of the graphite boat is simple, and the silicon wafer placement area is a rectangular structure, which is convenient for the placement of half a silicon wafer. At the same time, there are separators to separate the silicon wafers to prevent them from sticking. Without changing the structure of the graphite boat, the distance between the graphite boats is reduced, meeting the production capacity requirements of half a silicon wafer coating, and the modification cost is low. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the structure of a quartz boat according to an embodiment of the present invention.

[0022] In the figure:

[0023] 1. Quartz boat body 2. Silicon wafer placement area 3. Separator

[0024] 4. Card Points DETAILED DESCRIPTION

[0025] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0026] Figure 1 The schematic diagram of the structure of an embodiment of the present invention is shown, and the structure of this embodiment is specifically shown. This embodiment relates to a graphite boat sheet, a graphite boat and a coating method for silicon wafer battery coating, especially a graphite boat sheet, a graphite boat and a coating method for shingled and half-sheet large-size silicon wafer battery coating, which are used for shingled and half-sheet large-size silicon wafer battery coating, and a graphite boat with a graphite boat sheet for placing a half-sheet silicon wafer is used to coat silicon wafer batteries, so that the coating of large-size silicon wafer batteries can meet the requirements of tubular coating furnaces, and large-size silicon wafer batteries can be coated without modifying the structure of the existing tubular coating furnace. The large-size silicon wafers here are M6, M9, M10, M12 and above.

[0027] A graphite boat for coating shingles and half-sized silicon wafer cells, such as Figure 1 As shown, it includes a graphite boat body 1 and a separator 3. The graphite boat body 1 is provided with a plurality of silicon wafer placement areas 2, which are sequentially arranged along the length direction of the graphite boat body 1. The separator 3 is arranged at the silicon wafer placement area 2, and a clamping point 4 is arranged around the silicon wafer placement area 2. The silicon wafer placement area 2 is used to place silicon wafers, which is convenient for coating the silicon wafers. Two silicon wafers are placed in the silicon wafer placement area 2, and the two wafers are placed on both sides of the silicon wafer placement area 2, back to back, and single-sided coating is performed. The separator 3 is arranged to separate the two silicon wafers to prevent the two silicon wafers from sticking to each other.

[0028] Specifically, the graphite boat body 1 is a rectangular structure with a certain thickness, and the thickness is selected according to actual needs. At the same time, connecting lugs are respectively provided at both ends of the graphite boat body 1 for connecting with the graphite rod. Both ends of the graphite boat body 1 have multiple connecting lugs, which are selected according to actual needs. Preferably, in this embodiment, both ends of the graphite boat body 1 have two connecting lugs, which facilitates the connection of multiple graphite boat bodies 1 to form a graphite boat as a whole, with a stable structure and a long service life.

[0029] The graphite boat body 1 is provided with a plurality of silicon wafer placement areas 2 for placing silicon wafers. The silicon wafer placement area 2 is a rectangular through-hole structure, which is located in the middle part of the graphite boat in the width direction. At the same time, the length of the silicon wafer placement area 2 is greater than the width, which is convenient for placing half of a large-sized silicon wafer. The length and width of the silicon wafer placement area 2 are selected according to the length and width of the half-large-sized silicon wafer. The length of the silicon wafer placement area 2 is adapted to the length of the half-large-sized silicon wafer, and the width of the silicon wafer placement area is adapted to the width of the half-large-sized silicon wafer, which is convenient for placing half of a large-sized silicon wafer.

[0030] A clamping point 4 is provided on the peripheral side of the silicon wafer placement area 2, which facilitates the silicon wafer to be clamped in the silicon wafer placement area 2, so as to place the silicon wafer and perform film coating. There are multiple clamping points 4, at least three, which are arranged in a triangular shape to support the three sides of the silicon wafer, so as to facilitate the silicon wafer to be installed on the graphite boat for film coating.

[0031] In this embodiment, taking the M12 silicon wafer as an example, the length of the silicon wafer placement area is 209.8-210.2 mm, and the width of the silicon wafer placement area is 104.8-105.2 mm.

[0032] The separator 3 is a cross-shaped structure, which is arranged on the silicon wafer placement area 2. The four free ends of the separator 3 are respectively connected to the side walls of the through hole of the silicon wafer placement area 2, so that the separator 3 is located in the middle of the silicon wafer placement area 2 to separate the silicon wafers on both sides of the silicon wafer placement area 2. The material of the separator 3 is the same as that of the graphite boat body 1, and the separator 3 is fixedly connected to the side wall of the silicon wafer placement area 2 by bolts and other connecting parts. A mounting groove is provided on the side wall of the silicon wafer placement area 2, and a threaded hole is provided at the bottom of the mounting groove. The end of the separator 3 is provided with a mounting hole. When the separator 3 is installed, the mounting hole at the end of the separator 3 corresponds to the position of the threaded hole, which facilitates the separator to be connected to the side wall of the silicon wafer placement area by bolts and other connecting parts.

[0033] The separator 3 may also be an X-shaped structure, or two support rods arranged in parallel, or other shapes and structures, which can be selected according to actual needs and no specific requirements are made here.

[0034] There are multiple silicon wafer placement areas 2, which are arranged in sequence along the length direction of the graphite boat body 1, and the multiple silicon wafer placement areas are located on the same straight line and are arranged at equal intervals. The number of silicon wafer placement areas 2 is selected according to the length of the graphite boat body 1, so that the silicon wafer placement areas 2 are fully covered with the graphite boat body 1, so that multiple silicon wafers can be placed on each graphite boat body 1, and multiple silicon wafers can be coated.

[0035] A graphite boat for coating shingles and half-piece large-size silicon wafer batteries, comprising a plurality of the above-mentioned graphite boat sheets for coating shingles and half-piece large-size silicon wafer batteries, connecting rods and baffles, wherein the plurality of graphite boat sheets are connected to the connecting rods, the baffles are arranged on the connecting rods, and the baffles are arranged between adjacent graphite boat sheets, and the plurality of graphite boat sheets are arranged in parallel. There are a plurality of connecting rods, all of which are connected to the plurality of graphite boat sheets, and the plurality of connecting rods are arranged in parallel. That is, the plurality of graphite boat sheets are arranged in parallel and at equal intervals, and a plurality of mounting through holes are arranged in the length direction of the graphite boat sheets, located on the upper and lower sides of the silicon wafer placement area, and the connecting rods pass through the corresponding mounting through holes on the plurality of graphite boat sheets, connecting the plurality of graphite boat sheets together to form a graphite boat body, and at the same time, baffles are arranged on the connecting rods between adjacent graphite boat sheets to baffle adjacent graphite boat sheets, so that the plurality of graphite boat sheets are arranged on the connecting rods at equal intervals. A graphite rod is arranged at the connecting lug of the graphite boat sheet, and the graphite rod connects the plurality of connecting lugs together. A plurality of graphite boats are arranged in parallel, and a plurality of connecting rods are arranged in parallel, so that the coating is uniform when the silicon wafer is coated.

[0036] Preferably, the connecting rod is a ceramic rod, the baffle is a ceramic sleeve, the ceramic sleeve is mounted on the connecting rod, and the length of the ceramic sleeve is 10.48-10.52 mm, which is selected according to actual needs, and no specific requirements are made here. Compared with the existing graphite boat, the number of graphite boat slices is increased, the distance between the boat slices is shortened, and the risk of capacity loss is reduced, which makes up for the coating of half a silicon wafer without changing the overall structure of the graphite boat, meeting the capacity requirements.

[0037] A coating method for shingled, half-cut large-size silicon wafer cells comprises the following steps:

[0038] S1: Cutting the silicon wafer into two parts to form a half-wafer: Before inserting the wafer, the silicon wafer is cut into two parts to form a half-wafer. When cutting the silicon wafer, laser cutting is used to cut the silicon wafer into symmetrical half-wafers. The shape of the half-wafer is a rectangle, and its length is the same as the length of the silicon wafer before cutting, and its width is half of the width of the silicon wafer before cutting.

[0039] S2: Insert half a silicon wafer and load it on a graphite boat: Place half a silicon wafer on the silicon wafer placement area on the graphite boat and clamp it through clamping points, clamp half a silicon wafer on the silicon wafer placement area, and place half a silicon wafer on both sides of the silicon wafer placement area and separate them through separators for single-sided coating.

[0040] S3: Coating half of the silicon wafer. During the coating process of half of the silicon wafer, coating is performed multiple times: the graphite boat loaded with half of the silicon wafer is placed in the coating equipment for coating:

[0041] First, the first coating is performed: during the silicon wafer coating process, the first coating is performed by introducing silane and ammonia according to the first coating temperature and the first coating pressure, and setting the first coating time, wherein:

[0042] The first coating time is 120-180s, the first coating pressure is 1500-1900mTorr, the flow rate of silane is 850-1150sccm, the flow rate of ammonia is 4-6slm, and the first coating temperature is 400-500°C, so that ammonia and silane react at high temperature and deposit on the surface of the silicon wafer to form a layer of hydrogen-containing amorphous film.

[0043] Secondly, during the second coating process of the silicon wafer, silane and ammonia are introduced according to the second coating temperature and the second coating pressure, and the second coating time is set, wherein:

[0044] The second coating time is 180-240s, the second coating pressure is 1500-1900mTorr, the flow rate of silane is 470-770sccm, the flow rate of ammonia is 4.8-8.8slm, and the second coating temperature is 400-500℃, so that ammonia and silane react at high temperature and deposit on the surface of the silicon wafer, and a layer of hydrogen-containing amorphous film is formed again on the film formed by the first coating.

[0045] Finally, during the third coating process of the silicon wafer, silane and ammonia are introduced according to the third coating temperature and the third coating pressure, and the third coating time is set, wherein:

[0046] The third coating time is 270-370s, the third coating pressure is 1500-1900mTorr, the flow rate of silane is 310-610sccm, the flow rate of ammonia is 2.4-6.4slm, and the third coating temperature is 400-500°C, so that ammonia and silane react at high temperature and deposit on the surface of the silicon wafer, and a layer of hydrogen-containing amorphous film is generated again on the film generated by the second coating.

[0047] After the coating is completed, an anti-reflection passivation film is coated on the surface of half of the silicon wafer to reduce the light reflectivity of the silicon wafer surface. The injection of hydrogen ions enhances the passivation effect on the surface and body of the silicon wafer and reduces the recombination of carriers.

[0048] Embodiment 1

[0049] A coating method for shingled, half-cut large-size silicon wafer cells, taking 210x210mm as an example, includes the following steps:

[0050] S1: Cut the silicon wafer into two parts: Before inserting the wafer, cut the silicon wafer into two parts to form half-wafers. When cutting the silicon wafer, laser cutting is used to cut the 210x210mm silicon wafer into 210x105mm half-wafers.

[0051] S2: insert the half silicon wafer and load it on the graphite boat: the silicon wafer placement area on the graphite boat of the graphite boat is 210x105mm, which is convenient for placing the half silicon wafer and connecting it through the clamping points. The half silicon wafer is placed on both sides of the silicon wafer placement area for single-sided coating;

[0052] S3: Coating half of the silicon wafer. During the coating process of half of the silicon wafer, multiple coatings are performed: the graphite boat loaded with the silicon wafer is placed in the coating equipment for coating:

[0053] During the first coating, silane and ammonia are introduced according to the first coating temperature and the first coating pressure, and the first coating time is set, wherein the first coating time is 120s, the first coating pressure is 1500mTorr, the silane flow rate is 850sccm, the ammonia flow rate is 4slm, and the first coating temperature is 400°C.

[0054] During the second coating, silane and ammonia are introduced according to the second coating temperature and the second coating pressure, and the second coating time is set, wherein the second coating time is 180s, the second coating pressure is 1500mTorr, the silane flow rate is 470sccm, the ammonia flow rate is 4.8slm, and the second coating temperature is 400°C.

[0055] During the third coating, silane and ammonia are introduced according to the third coating temperature and the third coating pressure, and the third coating time is set, wherein the third coating time is 270s, the third coating pressure is 1500mTorr, the silane flow rate is 310sccm, the ammonia flow rate is 2.4slm, and the third coating temperature is 400°C.

[0056] Embodiment 2

[0057] A coating method for shingled, half-cut large-size silicon wafer cells, taking 210x210mm as an example, includes the following steps:

[0058] S1: Cut the silicon wafer into two parts: Before inserting the wafer, cut the silicon wafer into two parts to form half-wafers. When cutting the silicon wafer, laser cutting is used to cut the 210x210mm silicon wafer into 210x105mm half-wafers.

[0059] S2: insert the half silicon wafer and load it on the graphite boat: the silicon wafer placement area on the graphite boat of the graphite boat is 210x105mm, which is convenient for placing the half silicon wafer and connecting it through the clamping points. The half silicon wafer is placed on both sides of the silicon wafer placement area for single-sided coating;

[0060] S3: Coating half of the silicon wafer. During the coating process of half of the silicon wafer, multiple coatings are performed: the graphite boat loaded with the silicon wafer is placed in the coating equipment for coating:

[0061] During the first coating, silane and ammonia are introduced according to the first coating temperature and the first coating pressure, and the first coating time is set, wherein the first coating time is 180s, the first coating pressure is 1900mTorr, the silane flow rate is 1150sccm, the ammonia flow rate is 6slm, and the first coating temperature is 500°C.

[0062] During the second coating, silane and ammonia are introduced according to the second coating temperature and the second coating pressure, and the second coating time is set, wherein the second coating time is 240s, the second coating pressure is 1900mTorr, the silane flow rate is 770sccm, the ammonia flow rate is 8.8slm, and the second coating temperature is 500°C.

[0063] During the third coating, silane and ammonia were introduced according to the third coating temperature and the third coating pressure, and the third coating time was set, wherein the third coating time was 370s, the third coating pressure was 1900mTorr, the silane flow rate was 610sccm, the ammonia flow rate was 6.4slm, and the third coating temperature was 500°C.

[0064] Embodiment 3

[0065] A coating method for shingled, half-cut large-size silicon wafer cells, taking 210x210mm as an example, includes the following steps:

[0066] S1: Cut the silicon wafer into two parts: Before inserting the wafer, cut the silicon wafer into two parts to form half-wafers. When cutting the silicon wafer, laser cutting is used to cut the 210x210mm silicon wafer into 210x105mm half-wafers.

[0067] S2: insert the half silicon wafer and load it on the graphite boat: the silicon wafer placement area on the graphite boat of the graphite boat is 210x105mm, which is convenient for placing the half silicon wafer and connecting it through the clamping points. The half silicon wafer is placed on both sides of the silicon wafer placement area for single-sided coating;

[0068] S3: Coating half of the silicon wafer. During the coating process of half of the silicon wafer, multiple coatings are performed: the graphite boat loaded with the silicon wafer is placed in the coating equipment for coating:

[0069] During the first coating, silane and ammonia are introduced according to the first coating temperature and the first coating pressure, and the first coating time is set, wherein the first coating time is 150s, the first coating pressure is 1700mTorr, the silane flow rate is 1000sccm, the ammonia flow rate is 5slm, and the first coating temperature is 450°C.

[0070] During the second coating, silane and ammonia were introduced according to the second coating temperature and the second coating pressure, and the second coating time was set, wherein the second coating time was 210s, the second coating pressure was 1700mTorr, the silane flow rate was 620sccm, the ammonia flow rate was 6.8slm, and the second coating temperature was 450°C.

[0071] During the third coating, silane and ammonia were introduced according to the third coating temperature and the third coating pressure, and the third coating time was set, wherein the third coating time was 320s, the third coating pressure was 1700mTorr, the silane flow rate was 460sccm, the ammonia flow rate was 4.4slm, and the third coating temperature was 450°C.

[0072] Due to the adoption of the above technical solution, the structure of the graphite boat is simple, and the silicon wafer placement area is a rectangular structure, which is convenient for the placement of half a silicon wafer. At the same time, there are separators to separate the silicon wafers to prevent them from sticking. Without changing the structure of the graphite boat, the distance between the graphite boats is reduced, meeting the production capacity requirements of half a silicon wafer coating, and the modification cost is low.

[0073] The embodiments of the present invention are described in detail above, but the contents described are only preferred embodiments of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A graphite boat for coating shingles and half-sized silicon wafer cells, characterized by: It includes a graphite boat body and a separator, wherein the graphite boat body is provided with a plurality of silicon wafer placement areas, and the plurality of silicon wafer placement areas are arranged in sequence along the length direction of the graphite boat body, the separator is arranged at the silicon wafer placement area, and a card point is arranged on the circumference of the silicon wafer placement area. The silicon wafer placement area is a rectangular through-hole structure, and the free ends of the separator are respectively connected to the side walls of the through-holes of the silicon wafer placement area, so that the separator is located in the middle position of the silicon wafer placement area.

2. The graphite boat for coating shingled and half-sized silicon wafer cells according to claim 1 is characterized in that: The length of the silicon wafer placement area is greater than its width.

3. The graphite boat for coating shingled and half-sized silicon wafer cells according to claim 2 is characterized in that: The length of the silicon wafer placement area is adapted to the length of half a silicon wafer, and the width of the silicon wafer placement area is adapted to the width of half a silicon wafer.

4. The graphite boat for coating shingled and half-sized silicon wafer cells according to any one of claims 1 to 3, characterized in that: The separator is a cross-shaped structure and is arranged on the silicon wafer placement area.

5. A graphite boat for coating shingles and half-sized silicon wafer cells, characterized in that: It comprises a plurality of graphite boats, connecting rods and baffles for coating shingled and half-cut large-size silicon wafer cells according to any one of claims 1 to 4, wherein the plurality of graphite boats are connected to the connecting rods, the baffles are arranged on the connecting rods, and the baffles are arranged between adjacent graphite boats, and the plurality of graphite boats are arranged in parallel.

6. The graphite boat for coating shingled and half-sized silicon wafer cells according to claim 5 is characterized in that: The baffle is a ceramic sleeve, and the length of the ceramic sleeve is 10.48-10.52 mm.

7. A coating method for shingled and half-cut large-size silicon wafer cells, characterized in that: The following steps are included: S1: cutting the silicon wafer into two parts to form half silicon wafers; S2: inserting the half silicon wafer and loading it on a graphite boat: placing the half silicon wafer on a silicon wafer placement area on the graphite boat and clamping it through clamping points, clamping the half silicon wafer on the silicon wafer placement area, and placing the half silicon wafer on both sides of the silicon wafer placement area and separating them through separators; S3: coating the half silicon wafer, and performing coating for multiple times during the coating process of the half silicon wafer.

8. The coating method for shingled and half-cut large-size silicon wafer cells according to claim 7 is characterized in that: During the coating process of the half-wafer, during the first coating, silane and ammonia are introduced according to the first coating temperature and the first coating pressure, and the first coating time is set, wherein: The first coating time is 120-180s, the first coating pressure is 1500-1900mTorr, the flow rate of silane is 850-1150sccm, the flow rate of ammonia is 4-6slm, and the first coating temperature is 400-500°C.

9. The coating method for shingled and half-cut large-size silicon wafer cells according to claim 8, characterized in that: During the coating process of the half-wafer, during the second coating, silane and ammonia are introduced according to the second coating temperature and the second coating pressure, and the second coating time is set, wherein: The second coating time is 180-240s, the second coating pressure is 1500-1900mTorr, the flow rate of silane is 470-770sccm, the flow rate of ammonia is 4.8-8.8slm, and the second coating temperature is 400-500°C.

10. The coating method for shingled and half-cut large-size silicon wafer cells according to claim 9, characterized in that: During the coating process of the half-wafer, during the third coating, silane and ammonia are introduced according to the third coating temperature and the third coating pressure, and the third coating time is set, wherein: The third coating time is 270-370s, the second coating pressure is 1500-1900mTorr, the flow rate of silane is 310-610sccm, the flow rate of ammonia is 2.4-6.4slm, and the third coating temperature is 400-500°C.

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