Substrate processing device and substrate processing method

Abstract

The invention comprises: an inner tank (341); an outer tank (343) provided on the outer periphery of the inner tank (341); a first pipe (50) connecting the inner tank (341) and the outer tank (343); a heater (52) for heating a phosphoric acid aqueous solution passing through the first pipe (50); an on-off valve (513) provided between the heater (52) in the first pipe (50) and the inner tank (341); a second pipe (60) connecting the pipe portion between the heater (52) in the first pipe (50) and the inner tank (341) and the outer tank (343); and an on-off valve (61) provided on the second pipe (60).

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method. In particular, it relates to a technique for processing a substrate by immersing the substrate in a processing liquid stored in a tank. The substrates to be processed include, for example, semiconductor substrates, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, solar cell substrates, printed substrates, and the like. Background Art

[0002] In the manufacturing process of semiconductor devices, a semiconductor wafer is immersed in a phosphoric acid aqueous solution stored in a processing tank to etch a silicon nitride film formed on the surface of the substrate, which is called wet etching. A substrate processing apparatus that performs such wet etching is described in Patent Document 1, for example.

[0003] The substrate processing device of Patent Document 1 includes an inner tank for storing a phosphoric acid aqueous solution for immersing a substrate, an outer tank for recovering the phosphoric acid aqueous solution overflowing from the upper part of the inner tank, and a circulation pipe connecting the outer tank and the inner tank. A circulation pump, a heater, and a filter are provided in the circulation pipe. The circulation pipe heats and filters the phosphoric acid aqueous solution drawn from the outer tank and returns it to the inner tank. By providing the circulation pipe, the temperature of the phosphoric acid aqueous solution in the inner tank for immersing the substrate is maintained at a desired temperature, and foreign matter precipitated by etching is filtered.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2013-021066 Summary of the invention

[0007] However, in the prior art, the phosphoric acid aqueous solution is returned to the inner tank, which may cause uneven flow of the phosphoric acid aqueous solution in the inner tank. If the uneven flow occurs in the inner tank, the phosphoric acid concentration in the phosphoric acid aqueous solution or the concentration of silicon eluted from the substrate may vary, and thus the etching amount of the substrate may be uneven within the surface.

[0008] Therefore, an object of the present invention is to provide a technology for reducing in-plane deviation of substrate processing in a processing tank.

[0009] In order to solve the above-mentioned problems, the first aspect is a substrate processing device for processing a substrate, which comprises: an inner tank with a bottom and a first opening at the top; an outer tank with a bottom and a second opening at the top, which is arranged on the outer periphery of the inner tank; a first pipe connecting the interior of the inner tank with the interior of the outer tank; a pump arranged on the first pipe and supplying a processing liquid from the outer tank toward the inner tank; a heater arranged on the first pipe and heating the processing liquid passing through the first pipe; a second pipe connecting the heater in the first pipe with the piping portion between the inner tank and the outer tank; and a second pipe valve arranged on the second pipe and changing the flow rate of the processing liquid passing through the second pipe.

[0010] A second aspect is the substrate processing apparatus according to the first aspect, wherein one end of the first pipe is connected to the bottom of the inner tank.

[0011] The third aspect is a substrate processing device according to the first aspect or the second aspect, which further comprises a first piping valve, wherein the first piping valve is arranged between the heater and the inner tank in the first piping, and changes the flow rate of the processing liquid passing through the first piping, and the first piping valve is arranged between a portion of the first piping connected to the second pipe and the inner tank.

[0012] A fourth aspect is the substrate processing apparatus according to the third aspect, further comprising a control unit connected to the first piping valve and the second piping valve to control the first piping valve and the second piping valve.

[0013] The fifth aspect is the substrate processing device of the fourth aspect, wherein the control unit performs the following processing: a first circulation control processing of opening the first piping valve and closing the second piping valve; and a second circulation control processing of opening the first piping valve and the second piping valve.

[0014] The sixth aspect is a substrate processing device according to any one of aspects 3 to 5, wherein the first piping includes a bypass piping branched from a branch portion between the heater and the first piping valve in the first piping and connected to the inner tank, and further comprising a bypass piping valve, the bypass piping valve being arranged in the bypass piping to change the flow rate of the processing liquid passing through the bypass piping, and the second piping being connected between the branch portion in the bypass piping and the bypass piping valve.

[0015] A seventh aspect is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the second pipe passes through the second opening and is connected to the interior of the outer tank.

[0016] The eighth aspect is a substrate processing method for processing a substrate using a substrate processing device according to any one of aspects 1 to 7, the substrate processing method comprising: a) a step of immersing the substrate in the processing liquid stored in the inner tank; b) a step of returning the processing liquid passing through the first pipe to the inner tank in the step a), and returning the processing liquid passing through the first pipe to the outer tank via the second pipe; and c) a step of heating the processing liquid passing through the first pipe in the step b).

[0017] Effects of the Invention

[0018] According to the substrate processing device of the first aspect, a circulation flow can be formed to return the processing liquid overflowing from the inner tank and moving to the outer tank to the inner tank by using the first pipe. In addition, by opening the second pipe valve, the processing liquid can be moved from the first pipe to the second pipe and returned to the outer tank. Thus, since the amount of processing liquid returned to the inner tank can be reduced, the flow of the processing liquid in the inner tank can be reduced. Therefore, the in-plane deviation in substrate processing can be reduced.

[0019] According to the substrate processing apparatus of the second aspect, the processing liquid can be returned to the bottom of the inner tank, thereby reducing the flow of the processing liquid in the inner tank due to the circulation of the processing liquid.

[0020] According to the substrate processing apparatus of the third aspect, the flow of the processing liquid from the first pipe to the inner tank and the flow of the processing liquid from the first pipe to the second pipe can be controlled by the first pipe valve.

[0021] According to the substrate processing apparatus of the fourth aspect, the operation of the first piping valve and the second piping valve can be controlled by the control unit.

[0022] According to the substrate processing apparatus of the fifth aspect, the control unit performs the first circulation control process, so that the processing liquid can be moved from the outer tank to the inner tank via the first pipe. In addition, the control unit performs the second circulation control process, so that the processing liquid can be moved from the outer tank to the inner tank via the first pipe, and the processing liquid can be moved from the outer tank to the outer tank via the second pipe branched from the first pipe and extending from the first pipe. Therefore, the amount of processing liquid moved from the outer tank to the inner tank can be reduced.

[0023] According to the substrate processing apparatus of the sixth aspect, by closing the first piping valve and opening the second piping valve and the bypass piping valve, a portion of the processing liquid returned to the inner tank can be moved to the second piping and introduced into the outer tank, thereby reducing the amount of processing liquid flowing into the inner tank.

[0024] According to the substrate processing apparatus of the seventh aspect, the processing liquid can be returned from the upper side of the outer tank by the second pipe.

[0025] According to the substrate processing method of the eighth aspect, a circulation flow can be formed to return the processing liquid overflowing from the inner tank and moving to the outer tank to the inner tank by using the first pipe. In addition, by opening the second pipe valve, the processing liquid can be moved from the first pipe to the second pipe and returned to the outer tank. Thus, since the amount of processing liquid returned to the inner tank can be reduced, the flow of the processing liquid in the inner tank can be reduced. Therefore, the in-plane deviation in substrate processing can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 1 is a diagram showing substrate liquid processing apparatus 100 according to an embodiment.

[0027] Figure 2 2 is a diagram schematically showing the configuration of the etching processing apparatus 1 .

[0028] Figure 3 It is a timing chart for explaining the operation status of each element during etching processing in the etching processing apparatus 1 . DETAILED DESCRIPTION

[0029] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the components described in the present embodiment are merely illustrative and are not intended to limit the scope of the present invention to these components. In the accompanying drawings, the size or number of each part may be exaggerated or simplified as needed for ease of understanding.

[0030] In the present application, expressions showing relative or absolute positional relationships (e.g., "in a direction", "along a direction", "parallel", "orthogonal", "center", "concentric", "coaxial", etc.), unless otherwise specified, not only strictly indicate the positional relationship, but also indicate the state in which the angle or distance is relatively changed within the tolerance or the range in which the same degree of function can be obtained. Expressions indicating equal states (e.g., "same", "equal", "homogeneous", etc.), unless otherwise specified, not only indicate the state of being quantitatively and strictly equal, but also indicate the state in which there is a tolerance or a difference in the function that can obtain the same degree. Expressions indicating shapes (e.g., "quadrilateral" or "cylindrical shape", etc.), unless otherwise specified, not only strictly indicate the shape geometrically, but also indicate the shape having, for example, concave-convex or chamfered angles within the range in which the same degree of effect can be obtained. Expressions such as "having", "including", "having", "including" or "containing" a constituent element are not exclusive expressions that exclude the existence of other constituent elements. "above" unless otherwise specified includes the case in which two elements are connected and the case in which two elements are separated.

[0031] <Implementation Method>

[0032] Figure 1FIG. 1 is a diagram showing a substrate liquid processing apparatus 100 (substrate processing apparatus) according to an embodiment. Figure 1 In order to explain the positional relationship of each element, an XYZ orthogonal coordinate system is defined. The X-axis and the Y-axis are parallel to the horizontal plane, and the Z-axis is parallel to the vertical direction. Figure 1 In the diagram, the direction in which the tip of the arrow points is defined as the + (positive) direction, and the opposite direction is defined as the - (negative) direction.

[0033] The substrate liquid processing apparatus 100 includes a carrier carrying-in / out unit 2, a batch forming unit 3, a batch placing unit 4, a batch conveying unit 5, a batch processing unit 6, and a control unit 7. The carrier carrying-in / out unit 2 carries in and out a carrier 9 that accommodates a plurality of (e.g., 25) silicon wafers arranged vertically (in a horizontal posture (a posture in which both main surfaces of the substrate W are parallel to a horizontal plane) in a vertical direction (in a Z-axis direction).

[0034] The carrier loading and unloading section 2 is provided with a carrier stage 10, a carrier transport mechanism 11, carrier reserve bins 12 and 13, and a carrier loading table 14. A plurality of carriers 9 are loaded on the carrier stage 10 along the Y-axis direction. The carrier transport mechanism 11 transports the carrier 9. The carrier reserve bins 12 and 13 temporarily accommodate one carrier 9. The carrier loading table 14 accommodates the carrier 9. The carrier reserve bin 12 temporarily accommodates the substrate W before the substrate W is processed into a product by the batch processing section 6. The carrier reserve bin 13 temporarily stores the substrate W after the substrate W is processed into a product by the batch processing section 6.

[0035] The carrier loading and unloading unit 2 transfers the carrier 9 loaded from the outside to the carrier stage 10 to the carrier reserve bin 12 or the carrier loading table 14 using the carrier loading and unloading unit 2. The carrier 9 loaded on the carrier loading table 14 is transferred to the carrier reserve bin 13 or the carrier stage 10 using the carrier loading and unloading unit 2. The carrier 9 transferred to the carrier stage 10 is transferred to the outside.

[0036] The batch forming unit 3 forms a batch consisting of a number of substrates W (for example, 50) to be processed simultaneously by combining a plurality of substrates W accommodated in one or more carriers 9. When forming a batch, the batch forming unit 3 may also make the surfaces on which patterns are formed on the surfaces of the substrates W face each other. In addition, when forming a batch, the batch forming unit 3 may also make all pattern-formed surfaces of the substrates W face one side.

[0037] The batch forming unit 3 is provided with a substrate conveying mechanism 15 for simultaneously conveying a plurality of substrates W. The substrate conveying mechanism 15 has a mechanism for changing the posture of the substrate W from a horizontal posture to a vertical posture (a posture in which both main surfaces of the substrate W are parallel to the vertical plane) and from a vertical posture to a horizontal posture during the conveyance of the substrate W.

[0038] The batch forming unit 3 uses the substrate conveying mechanism 15 to convey the substrate W from the carrier 9 mounted on the carrier mounting table 14 to the batch mounting unit 4, and to mount the substrate W forming the batch on the batch mounting unit 4. The batch forming unit 3 conveys the batch mounted on the batch mounting unit 4 to the carrier 9 mounted on the carrier mounting table 14 using the substrate conveying mechanism 15. The substrate conveying mechanism 15 is a substrate supporting unit for supporting a plurality of substrates W, and includes a first substrate supporting unit for supporting the substrate W before processing (before being conveyed by the batch conveying unit 5), and a second substrate supporting unit for supporting the substrate W after processing (after being conveyed by the batch conveying unit 5). By including the first and second substrate supporting units, it is possible to suppress particles or the like falling off the substrate W before processing from being attached to the substrate W after processing.

[0039] The batch placement section 4 is provided with a batch placement table 16 for temporarily placing the batch transferred by the batch transfer section 5 between the batch forming section 3 and the batch processing section 6. In addition, the batch placement section 4 is provided with a batch placement table 17 on the carrying-in side for placing the batch before processing (before being transferred by the batch transfer section 5) and a batch placement table 18 on the carrying-out side for placing the batch after processing (after being transferred by the batch transfer section 5). A plurality of substrates W of one batch are placed on the placement tables 17 and 18 in a vertical posture in the Y-axis direction.

[0040] In the batch placement section 4, a batch formed by the batch formation section 3 is placed on the inlet-side batch placement table 17, and the batch is carried into the batch processing section 6 by the batch conveying section 5. In the batch placement section 4, a batch carried out from the batch processing section 6 by the batch conveying section 5 is placed on the outlet-side batch placement table 18, and the batch is conveyed to the batch formation section 3.

[0041] The batch transport unit 5 transports batches between the batch placement unit 4 and the batch processing unit 6, or inside the batch processing unit 6. The batch transport unit 5 is provided with a batch transport mechanism 19 for transporting batches. The batch transport mechanism 19 includes a rail 20 arranged along the batch placement unit 4 and the batch processing unit 6, a moving body 21 that moves along the rail 20 while holding a plurality of substrates W, and a motor that moves the moving body 21. The moving body 21 is provided with a substrate holding body 22 that holds a plurality of substrates W arranged in a front-to-back manner in a vertical posture. The moving body 21 has a mechanism including a motor that moves the substrate holding body 22 forward and backward in the Y-axis direction.

[0042] The batch processing section 6 treats a plurality of substrates W arranged in a vertical posture along the Y-axis direction as one batch and performs processes such as etching, cleaning and drying. In the batch processing section 6, a drying processing device 23, a substrate holder cleaning processing device 24, a cleaning processing device 25, and a plurality of (two in this example) etching processing devices 1 are arranged in order toward the +X direction.

[0043] The drying processing device 23 includes a processing tank 27 and a substrate lifting mechanism 28 which is freely raised and lowered in the processing tank 27. A drying processing gas (isopropyl alcohol (IPA) or the like) is supplied to the processing tank 27. A plurality of substrates W of one batch are held in a vertical position in a front-to-back arrangement in the substrate lifting mechanism 28. The drying processing device 23 receives a batch from the substrate holding body 22 of the batch transporting mechanism 19 by the substrate lifting mechanism 28, and lifts the batch by the substrate lifting mechanism 28, thereby performing drying processing on the substrates W by using the drying processing gas supplied to the processing tank 27. In addition, the drying processing device 23 delivers a batch from the substrate lifting mechanism 28 to the substrate holding body 22 of the batch transporting mechanism 19.

[0044] The substrate holder cleaning processing device 24 has a processing tank 29 and a supply mechanism for supplying a cleaning processing liquid and a dry gas to the processing tank 29. The substrate holder cleaning processing device 24 supplies a cleaning processing liquid to the substrate holder 22 of the batch transport mechanism 19 and then supplies a dry gas, thereby performing a cleaning process on the substrate holder 22.

[0045] The cleaning device 25 performs cleaning of the substrate W. The cleaning device 25 includes a cleaning tank 30 and a rinsing tank 31, and substrate lifting mechanisms 32 and 33 are provided in the respective tanks 30 and 31 so as to be freely raised and lowered. The cleaning tank 30 stores a cleaning liquid (SC-1 (aqueous sodium peroxide mixed liquid) or the like). The rinsing tank 31 stores a rinsing liquid (pure water or the like).

[0046] Each etching processing device 1 performs etching processing on a substrate W. The etching processing device 1 includes a processing tank 34 for etching and a processing tank 35 for rinsing. Substrate lifting mechanisms 36 and 37 are provided in each of the processing tanks 34 and 35. The processing tank 34 for etching can store a processing liquid for etching (aqueous solution of phosphoric acid) therein. The processing tank 35 for rinsing can store a processing liquid for rinsing (pure water, etc.) therein.

[0047] The cleaning processing device 25 and the etching processing device 1 have, for example, the same configuration. If the etching processing device 1 is described, the substrate lifting mechanism 36 arranges and holds a plurality of substrates W of a batch in a vertical posture in the front and back direction. In the etching processing device 1, the substrate lifting mechanism 36 receives the batch from the substrate holding body 22 of the batch transporting mechanism 19. Then, the batch is lowered by the substrate lifting mechanism 36 and the batch is immersed in the etching processing liquid in the processing tank 34. Thus, the etching processing of the substrate W is performed. After the etching processing, the substrate lifting mechanism 36 raises the batch and delivers the batch to the substrate holding body 22. Thereafter, the substrate lifting mechanism 37 receives the batch from the substrate holding body 22. Then, the batch is lowered by the substrate lifting mechanism 37 and the batch is immersed in the rinsing processing liquid in the processing tank 35. Thus, the rinsing processing of the substrate W is performed. After the rinsing processing, the substrate lifting mechanism 37 raises the batch and delivers the batch to the substrate holding body 22.

[0048] The control unit 7 is connected to each part of the substrate liquid processing device 100 (the carrier loading and unloading part 2, the batch forming part 3, the batch loading part 4, the batch conveying part 5, the batch processing part 6, and the etching processing device 1) to control these actions. The hard disk structure of the control unit 7 is the same as that of a normal computer. That is, the control unit 7 has a CPU (processor), ROM, RAM (memory), and a fixed disk. The CPU includes an operation circuit that performs various calculations. The ROM stores basic programs. The RAM is a volatile main storage device that stores various information. The fixed disk is an auxiliary storage device that stores programs or data that can execute the CPU. The CPU, ROM, RAM, and the fixed disk are connected together by a bus.

[0049] The control unit is connected to a display unit for displaying an image, and an operating unit including a keyboard or a mouse, etc. The display unit may be composed of a touch panel, in which case the display unit also functions as an operating unit. A reading device and a communication unit may also be connected to the bus of the control unit. The reading device reads information from a non-temporary recording medium such as an optical disk, a magnetic disk, or an optical magnetic disk that can be read by a computer. The communication unit is capable of performing information communication with other computers (servers, etc.) in the control unit 7. The program is provided to the control unit 7 by reading the recording medium on which the program is recorded by the reading device. In addition, the program can be provided to the control unit 7 via the communication unit.

[0050] Figure 2: is a diagram schematically showing the structure of the etching treatment device 1. The etching treatment device 1 has the above-mentioned treatment tank 34 that stores a phosphoric acid aqueous solution of a predetermined concentration as a treatment liquid. The treatment tank 34 has an inner tank 341 and an outer tank 343. The inner tank 341 is formed into a bottomed cylindrical shape having a first opening 341P formed by an edge of the upper portion. The outer tank 343 is provided at the outer peripheral portion of the inner tank 341 and is formed into a bottomed cylindrical shape having a second opening 343P formed by an edge of the upper portion. In addition, the outer tank 343 is formed into a ring shape that surrounds the entire outer peripheral portion of the inner tank 341. If the inner tank 341 is filled with the phosphoric acid aqueous solution, the remaining phosphoric acid aqueous solution overflows from the first opening 341P. Then, the overflowed phosphoric acid aqueous solution passes through the second opening 343P and flows into the interior of the outer tank 343.

[0051] One end of the first pipe 50 is connected to the inside of the outer tank 343. In this example, one end of the first pipe 50 extends downward from the top of the outer tank 343 through the second opening 343P and extends inside the outer tank 343. That is, the opening of one end of the first pipe 50 is arranged below the second opening 343P. The other end of the first pipe 50 is connected to the inside of the inner tank 341. In this example, the other end of the first pipe 50 is connected to the bottom 341B of the inner tank 341 (the bottom surface in the depth direction of the inner tank 341). The concentration detector 501, the pump 51, the on-off valve 511, the heater 52, the filter 53, and the on-off valve 513 are provided in the first pipe 50 in order from the upstream side (the outer tank 343 side).

[0052] The concentration detector 501 detects the phosphoric acid concentration in the phosphoric acid aqueous solution passing through the first pipe 50. The concentration detector 501 detects the phosphoric acid concentration in the phosphoric acid aqueous solution by measuring, for example, the absorbance of light of a specific wavelength of the phosphoric acid aqueous solution. The concentration detector 501 detects the phosphoric acid concentration in the phosphoric acid aqueous solution discharged from the outer tank 343. The concentration detector 501 is connected to the control unit 7, and sends a detection signal corresponding to the detected phosphoric acid concentration to the control unit 7.

[0053] The pump 51 discharges the phosphoric acid aqueous solution from the inside of the outer tank 343 through the first pipe 50, and sends the phosphoric acid aqueous solution to the inside of the inner tank 341. The heater 52 heats the phosphoric acid aqueous solution passing through the first pipe 50. The filter 53 filters the phosphoric acid aqueous solution passing through the first pipe 50. The phosphoric acid aqueous solution discharged from the outer tank 343 moves to the inner tank 341 by the drive of the pump 51. Then, the phosphoric acid aqueous solution overflowing from the inner tank 341 flows out to the outer tank 343 again. In this way, a circulation flow of the phosphoric acid aqueous solution is formed in the etching processing device 1.

[0054] The on-off valves 511 and 513 are, for example, electric or electromagnetic valves, and perform conduction and blocking control on the circulation of the processing liquid in the first pipe 50. "Conducting and blocking control on the circulation" means controlling the circulation of the processing liquid in the pipe between two states: a state where the circulation is possible and a state where the circulation is not possible. The on-off valves 511 and 513 are connected to the control unit 7, and the control unit 7 controls the opening and closing actions.

[0055] like Figure 2 As shown, the substrate lifting mechanism 36 includes a holder (not shown) for holding a plurality of substrates W arranged horizontally at intervals in a vertically standing posture. In addition, the substrate lifting mechanism 36 includes a lifting motor (not shown) for lifting and lowering between an upper position Pos1 and a lower position Pos2 while each substrate W is held by the holder.

[0056] The first pipe 50 is provided with a bypass pipe 55. In this example, one end of the bypass pipe 55 is connected to a branch portion 531 of the pipe portion between the filter 53 and the on-off valve 513 (the first pipe valve) in the first pipe 50. In addition, the other end of the bypass pipe 55 is connected to a connection portion 533 between the on-off valve 513 and the inner tank 341 in the first pipe 50. That is, the bypass pipe 55 branches from the branch portion 531 between the heater 52 and the on-off valve 513 in the first pipe 50, and is connected to the inner tank 341. In addition, the other end of the bypass pipe 55 may be directly connected to the inner tank 341 (for example, the bottom 341B).

[0057] The bypass pipe 55 of the first pipe 50 is provided with an on-off valve 57, a flow control valve 58, and a flow detector 59 in order from the upstream side (branch portion 531 side). The on-off valve 57 and the flow control valve 58 are connected to the control unit 7 and are operated according to a control signal from the control unit 7. The on-off valve 57 controls the flow of the phosphoric acid aqueous solution flowing from the bypass pipe 55, and the flow control valve 58 adjusts the flow rate of the phosphoric acid aqueous solution flowing from the bypass pipe 55. "Adjusting the flow rate" means changing the flow rate while at least the treatment liquid is flowing. As the flow control valve 58, for example, an electric throttle valve is used. The flow detector 59 detects the flow rate of the phosphoric acid aqueous solution flowing from the bypass pipe 55. The flow detector 59 is connected to the control unit 7 and sends a detection signal corresponding to the detected flow rate to the control unit 7. As the flow detector 59, for example, an ultrasonic flow meter that detects the flow rate in the pipe using ultrasonic waves from the outside of the pipe can be used.

[0058] The etching processing apparatus 1 includes a second pipe 60. The second pipe 60 constitutes a pipe path connecting the first pipe 50 and the outer tank 343. In this example, one end of the second pipe 60 is connected to the middle of the path of the bypass pipe 55 which is a part of the first pipe 50. More specifically, one end of the second pipe 60 is connected to the pipe portion between the on-off valve 57 and the branch portion 531 in the bypass pipe 55 of the first pipe 50 via a connecting portion 601. The other end of the second pipe 60 is connected to the inside of the outer tank 343. In this example, the other end of the second pipe 60 extends downward from the top of the outer tank 343 through the second opening 343P and extends inside the outer tank 343.

[0059] An on-off valve 61 is provided in the path of the second pipe 60. The on-off valve 61 is connected to the control unit 7, and performs on-off control of the flow of the phosphoric acid aqueous solution in the second pipe 60 according to a control signal from the control unit 7.

[0060] In this example, the controller 7 performs a first circulation control process of opening the on-off valves 511 and 513 and closing the on-off valves 57 and 61. In the first circulation control process, an amount of phosphoric acid aqueous solution equal to that discharged from the outer tank 343 is returned to the inner tank 341.

[0061] In addition, in this example, the control unit 7 performs a second circulation control process in which the on-off valves 511, 57, and 61 are opened and the on-off valve 513 is closed. In this second circulation control process, a part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 via the bypass pipe 55 of the first pipe 50, and the rest is returned to the outer tank 343 via the second pipe 60. More specifically, by closing the on-off valve 513, the phosphoric acid treatment liquid discharged from the outer tank 343 via the first pipe 50 is introduced into the bypass pipe 55 via the branch portion 531. A part of the phosphoric acid aqueous solution introduced into the bypass pipe 55 flows from the bypass pipe 55 into the second pipe 60 via the connection portion 601 and is introduced into the outer tank 343. In addition, the rest of the phosphoric acid aqueous solution is introduced into the inner tank 341 via the bypass pipe 55 and the connection portion 533.

[0062] As described above, in the first or second circulation control process by the control unit 7, the on-off valve 513 functions as a first piping valve that changes the flow rate of the treatment liquid passing through the first piping 50. In addition, the on-off valve 61 functions as a second piping valve that changes the flow rate of the treatment liquid passing through the second piping 60. Furthermore, the on-off valve 57 or the flow control valve 58 functions as a bypass piping valve that changes the flow rate of the treatment liquid flowing through the bypass piping 55. In addition, "changing the flow rate" is a concept that includes not only the case of conducting and blocking the circulation of the liquid by the on-off valve, but also the case of adjusting the flow rate by the flow control valve.

[0063] When the control unit 7 performs the second circulation control process, the flow control valve 58 is controlled in accordance with the detection result of the flow detector 59, thereby adjusting the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341. That is, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be increased by increasing the opening of the flow control valve 58, and the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be reduced by decreasing the opening of the flow control valve 58.

[0064] In addition, the flow control valve 58 may be used to control the flow of the phosphoric acid aqueous solution in the bypass pipe 55. In this case, the on-off valve 57 may be omitted. In addition, the flow control valve 58 is not necessarily provided. When the flow control valve 58 is omitted, the flow of the phosphoric acid aqueous solution flowing through the bypass pipe 55 is not adjusted, and the flow of the phosphoric acid aqueous solution is controlled by the on-off valve 57. In addition, the bypass pipe 55 is not necessarily provided and may be omitted. When the bypass pipe 55 is omitted, one end (connection portion 601) of the second pipe 60 may be directly connected, for example, between the heater 52 and the inner tank 341 in the first pipe 50 (for example, the position of the branch portion 531). In this case, when a circulation flow is formed in the first pipe 50, by opening the on-off valve 61, a part of the phosphoric acid aqueous solution in the first pipe 50 flows into the second pipe 60 and is sent to the outer tank 343. In this way, the amount of phosphoric acid aqueous solution returned to the inner tank 341 via the first pipe 50 can be reduced.

[0065] The etching treatment apparatus 1 includes a phosphoric acid aqueous solution supply unit 40. The phosphoric acid aqueous solution supply unit 40 supplies a phosphoric acid aqueous solution of a predetermined concentration to the outer tank 343. In addition, the phosphoric acid aqueous solution supply unit 40 may supply the phosphoric acid aqueous solution to the inner tank 341 or a predetermined portion of the first piping 50. The phosphoric acid aqueous solution supply unit 40 includes a supply source including a tank for storing the phosphoric acid aqueous solution, and a supply piping 401 connecting the supply source to the outer tank 343. A flow detector 403, a flow control valve 405, and an on-off valve 407 are provided in the supply piping 401 in order from the upstream side (supply source side). The flow detector 403 detects the flow rate of the phosphoric acid aqueous solution flowing through the supply piping 401. The flow control valve 405 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the supply piping 401. The on-off valve 417 performs on-off control of the flow of the phosphoric acid aqueous solution in the supply piping 401.

[0066] The flow detector 403, the flow control valve 405, and the on-off valve 407 are connected to the control unit 7. The control unit 7 controls the flow control valve 405 based on the signal indicating the flow rate sent from the flow detector 403. Thus, the phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution to the outer tank 343 at a controlled flow rate.

[0067] The substrate liquid processing apparatus 100 includes a pure water supply unit 41. The pure water supply unit 41 supplies pure water to the outer tank 343. In addition, the pure water supply unit 41 can also supply pure water to a predetermined position of the inner tank 341 or the first pipe 50. For example, pure water is supplied to replenish water evaporated by heating the phosphoric acid aqueous solution. The pure water supply unit 41 includes a supply source for supplying pure water at a predetermined temperature, and a supply pipe 411 connecting the supply source and the outer tank 343. A flow detector 413, a flow control valve 415, and an opening and closing valve 417 are provided in the supply pipe 411 in order from the upstream side (supply source side). The flow detector 413 detects the flow rate of pure water flowing through the supply pipe 411. The flow control valve 415 adjusts the flow rate of pure water flowing through the supply pipe 411. The opening and closing valve 417 performs conduction and blocking control on the flow of pure water in the supply pipe 411.

[0068] The flow detector 413, the flow control valve 415, and the on-off valve 417 are connected to the control unit 7. The control unit 7 controls the flow control valve 415 based on the signal indicating the flow rate sent from the flow detector 413. Thus, the pure water supply unit 41 supplies pure water to the outer tank 343 at a controlled flow rate.

[0069] The etching processing device 1 includes a silicon supply unit 42. The silicon supply unit 42 supplies a silicon aqueous solution (for example, a hexafluorosilicic acid aqueous solution (H2SiF6+H2O)) to the outer tank 343. In addition, the silicon supply unit 42 can also supply the silicon aqueous solution to the inner tank 341 or a predetermined portion of the first piping 50. The silicon supply unit 42 includes a supply source for supplying the silicon aqueous solution, and a supply piping 421 connecting the supply source and the outer tank 343. A flow detector 423, a flow control valve 425, and an opening and closing valve 427 are provided in the supply piping 421 in order from the upstream side (supply side). The flow detector 423 detects the flow rate of the silicon aqueous solution flowing through the supply piping 421. The flow control valve 425 adjusts the flow rate of the silicon aqueous solution flowing through the supply piping 421. The opening and closing valve 427 performs conduction and blocking control on the circulation of the silicon aqueous solution in the supply piping 421.

[0070] The flow detector 423, the flow control valve 425 and the on-off valve 427 are connected to the control unit 7. The control unit 7 controls the flow control valve 425 based on the signal indicating the flow rate sent from the flow detector 423. Thus, the silicon supply unit 42 supplies silicon to the outer tank 343 at the controlled flow rate.

[0071] A waste pipe 90 is connected to the pipe portion of the first pipe 50 that connects the heater 52 and the filter 53. The waste pipe 90 is a pipe path used when the phosphoric acid aqueous solution in the treatment tank 34 is discarded to the outside of the substrate liquid processing apparatus 100. The waste pipe 90 is provided with a concentration detector 901, a waste valve 91, a cooling box 93, and a waste valve 95 in order from the upstream side (the first pipe 50 side).

[0072] The concentration detector 901 detects the silicon concentration in the phosphoric acid aqueous solution passing through the waste pipe 90. The concentration detector 901 detects the silicon concentration by, for example, measuring the absorbance of light of a specific wavelength in the phosphoric acid aqueous solution. The concentration detector 901 is connected to the control unit 7 and sends a detection signal corresponding to the detected silicon concentration to the control unit 7.

[0073] The cooling tank 93 temporarily stores the relatively high temperature phosphoric acid aqueous solution discharged from the treatment tank 34 and cools it to a temperature at which it can be discarded. The discard valve 91 provided on the upstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution flows from the first pipe 50 into the cooling tank 93. In addition, the discard valve 95 provided on the downstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution is discharged from the cooling tank 93. The discard valves 91 and 95 are connected to the control unit 7, and are opened and closed by the control unit 7.

[0074] The phosphoric acid aqueous solution passing through the first pipe 50 is sent to the waste pipe 90 at an appropriate timing. Thus, the silicon concentration in the phosphoric acid aqueous solution is detected by the concentration detector 901. When the silicon concentration is higher than a predetermined concentration, pure water from the pure water supply unit 41 or phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply unit 40 is appropriately supplied to reduce the silicon concentration in the phosphoric acid aqueous solution of the circulation system.

[0075] <Regarding the formation of a circulation flow of phosphoric acid aqueous solution>

[0076] When the substrate W is processed in the processing tank 34, a circulation flow of the phosphoric acid aqueous solution is formed in the processing tank 34 and the first pipe 50. In order to form this circulation flow, first, the phosphoric acid aqueous solution is stored in the processing tank 34. Specifically, the phosphoric acid aqueous solution is supplied to the outer tank 343 of the liquid processing part 39 by the phosphoric acid aqueous solution supply part 40, and the pump 51 of the first pipe 50 supplies the phosphoric acid aqueous solution from the outer tank 343 to the inner tank 341. When the inside of the inner tank 341 is filled with the phosphoric acid aqueous solution, the phosphoric acid aqueous solution overflowing from the first opening 341P of the inner tank 341 starts to move to the outer tank 343. When one end of the first pipe 50 reaches the phosphoric acid aqueous solution stored in the outer tank 343, the phosphoric acid aqueous solution in the outer tank 343 starts to be discharged through the first pipe 50. In this way, a circulation flow in which the phosphoric acid aqueous solution circulates is formed in the circulation system of the processing tank 34 and the first pipe 50.

[0077] Before or after the formation of the circulation flow, the phosphoric acid aqueous solution flowing from the first pipe 50 is heated by the heater 52 so that the phosphoric acid aqueous solution in the inner tank 341 reaches a predetermined temperature (e.g., 80° C.). When the phosphoric acid aqueous solution is in a high temperature state, water evaporates, and therefore, the phosphoric acid concentration in the phosphoric acid aqueous solution may increase with the passage of time. When the phosphoric acid concentration detected by the concentration detector 501 exceeds a management upper limit value predetermined in advance, the control unit 7 supplies pure water from the pure water supply unit 41. The supply of pure water for adjusting the phosphoric acid concentration can be performed at any timing when the substrate W is immersed in the phosphoric acid aqueous solution (that is, during the liquid treatment of the substrate W), or when the substrate W is not immersed in the treatment liquid.

[0078] Figure 3 1 is a timing chart for explaining the operation status of each element during etching processing in the etching processing device 1. Figure 3 In the figure, the horizontal axis represents time, and the vertical axis shows the operations of the substrate lifting mechanism 36, the opening and closing valve 513, the opening and closing valve 57, and the opening and closing valve 61 in order from the top. In addition, the state change between the "up" indicating the state of being located at the upper position Pos1 above the processing tank 34 and the "down" indicating the state of being located inside the processing tank 34, that is, the lower position Pos2 is shown (refer to Figure 2 ). The substrate lifting mechanism 36 moves the batch (substrate W) to the lower position Pos2 while holding the batch to perform etching processing on the batch. In addition, for the opening and closing valves 513, 57, and 61, the state change between "open" indicating the open state and "closed" indicating the closed state is shown. In addition, Figure 3 The “amount returned to the inner tank” shown indicates the amount of the phosphoric acid aqueous solution that flows into the inner tank 341 through the first pipe 50 by the operation of the pump 51 .

[0079] exist Figure 3 , a time chart of one cycle of etching processing performed on one batch including a plurality of substrates W in the processing tank 34 of the etching processing apparatus 1 is shown. The etching processing includes a loading step S11, an immersion step S12, and a unloading step S13.

[0080] In the carrying-in process S11, the substrate lifting mechanism 36 at the upper position Pos1 includes a process of receiving a batch from the batch transport mechanism 19. In the immersion process S12, the substrate lifting mechanism 36 is lowered from the upper position Pos1 to the lower position Pos2, and the batch is immersed in the phosphoric acid aqueous solution stored in the inner tank 341. By performing this immersion process S12, the substrate W is etched. In the unloading process S13, the substrate lifting mechanism 36 is raised from the lower position Pos2 to the upper position Pos1, and the batch transport mechanism 19 receives the batch from the substrate lifting mechanism 36 at the upper position Pos1. The batch delivered to the batch transport mechanism 19 is processed with a rinse solution in the processing tank 35.

[0081] In addition, one cycle of etching treatment in the treatment tank 34 includes a normal cycle period T1, a bypass cycle period T2, and a normal cycle period T3 in order. The normal cycle periods T1 and T3 are periods during which the same amount of phosphoric acid aqueous solution as the phosphoric acid aqueous solution discharged from the outer tank 343 is circulated back to the inner tank 341 via the first pipe 50 by the operation of the pump 51. Hereinafter, the cycle performed using the normal cycle periods T1 and T3 is sometimes referred to as a "normal cycle". The bypass cycle period T2 is a period during which a part of the phosphoric acid aqueous solution discharged from the outer tank 343 is circulated back to the inner tank 341 via the bypass pipe 55 and the rest is circulated back to the outer tank 343 via the second pipe 60 by the operation of the pump 51. Hereinafter, the cycle performed during the bypass cycle period T2 is sometimes referred to as a "bypass cycle".

[0082] In the normal cycle of the normal cycle period T1, T3, the control unit 7 performs the above-mentioned first cycle control process. That is, in the normal cycle period T1, T3, the on-off valves 511, 513 of the first pipe 50 are opened, and the on-off valve 57 of the bypass pipe 55 of the first pipe 50 and the on-off valve 61 of the second pipe 60 are closed. In this normal cycle, the phosphoric acid aqueous solution discharged from the outer tank 343 via the first pipe 50 is directly introduced into the inner tank 341 via the first pipe 50. Therefore, in the normal cycle period T1, T3, the phosphoric acid aqueous solution from the outer tank 343 is all returned to the inner tank 341. That is, the phosphoric acid aqueous solution of the same amount as the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.

[0083] On the other hand, in the bypass cycle of the bypass cycle period T2, the control unit 7 performs the second cycle control process described above. That is, the on-off valve 513 of the first pipe 50 is closed, and the on-off valve 57 of the bypass pipe 55 and the on-off valve 61 of the second pipe 60 are opened. In the bypass cycle, the phosphoric acid aqueous solution discharged from the outer tank 343 via the first pipe 50 moves to the bypass pipe 55 side in the branch portion 531. In addition, in the connection portion 601, a part of the phosphoric acid aqueous solution passes through the second pipe 60 and is introduced into the outer tank 343, and the rest passes through the bypass pipe 55 and moves to the first pipe 50 via the connection portion 533, and is then introduced into the inner tank 341. In the bypass cycle, the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. Therefore, the temperature drop of the phosphoric acid aqueous solution in the inner tank 341 can be suppressed.

[0084] Here, the total amount of the phosphoric acid aqueous solution discharged from the outer tank 343 by the operation of the pump 51 is defined as V. Then, as for the flow rate supplied to the inner tank 341 of the phosphoric acid aqueous solution, the flow rate V1 during the normal circulation period T1 and T3 becomes substantially the same as the total amount V, but becomes the flow rate V2 which is smaller than the flow rate V1 during the bypass circulation period T2. This is because, since the second pipe 60 can flow during the bypass circulation period T2, a part of the phosphoric acid aqueous solution is introduced into the outer tank 343 from the second pipe 60. That is, the amount of the phosphoric acid aqueous solution introduced into the outer tank 343 is represented by V-V2.

[0085] During the bypass cycle period T2, the flow detector 59 detects the flow rate introduced into the inner tank 341 via the bypass pipe 55. The flow rate detected by the flow detector 59 is the same as the flow rate flowing into the inner tank 341. Therefore, during the bypass cycle period T2, the control unit 7 controls the flow control valve 58 in such a way that the detection signal of the flow detector 59 approaches the predetermined flow rate V2. In this way, the flow rate supplied to the inner tank 341 during the bypass cycle period T2 can be appropriately adjusted. In addition, the control unit 7 can also accept the change of the size of V2 through the operation unit.

[0086] exist Figure 3 In the example, the carrying-in step S11 before the immersion step S12 is included in the normal circulation period T1. Therefore, the normal circulation is performed in the carrying-in step S11. In this case, before the start of the immersion step S12, the phosphoric acid aqueous solution heated by the heater 52 is all supplied to the inside of the inner tank 341, so that the temperature of the phosphoric acid aqueous solution in the inner tank 341 can quickly reach the desired temperature. In addition, after the etching process of the previous batch, in order to adjust the concentration of phosphoric acid or silicon, in the case of supplying liquid from each supply unit 41 to 43 to the processing tank 34, the normal circulation is performed in the carrying-in step S11, thereby, the phosphoric acid concentration and the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 can be quickly adjusted before the immersion step S12.

[0087] exist Figure 3 In the example of FIG. 1 , a portion of the period during which the immersion step S12 is performed is set as the bypass cycle period T2. Specifically, during the immersion step S12, a temporary bypass cycle is performed. By performing the bypass cycle, the flow of the phosphoric acid aqueous solution generated in the inner tank 341 can be reduced compared to when the normal cycle is performed. That is, the deviation of the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced, and therefore, the in-plane deviation of the etching amount in the substrate W can be reduced.

[0088] exist Figure 3 In the example of , the initial stage of the immersion step S12 is included in the normal circulation period T1. That is, in the immersion step S12, the normal circulation is initially performed for a certain period of time. After the immersion step S12 is just started, the phosphoric acid treatment solution is immersed in the inner tank 341 in batches, so the temperature of the phosphoric acid aqueous solution tends to be low. Therefore, after the immersion step S12 is just started, the normal circulation is performed, thereby all the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. As a result, the temperature drop of the phosphoric acid aqueous solution in the inner tank 341 can be reduced.

[0089] exist Figure 3 In the example, the latter stage of the immersion process S12 is included in the normal circulation period T3. That is, in the latter stage of the immersion process S12, the bypass circulation is transitioned to the normal circulation, and the unloading process S13 is performed. Usually, in the immersion process S12, silicon is eluted from each substrate W into the phosphoric acid aqueous solution, and therefore, the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 tends to become high. Therefore, it is preferred to quickly move the phosphoric acid aqueous solution in the inner tank 341 to the outer tank 343 by performing the normal circulation before the immersion process S12 is completed. When the silicon concentration in the phosphoric acid aqueous solution is greater than the reference value, the silicon concentration in the phosphoric acid aqueous solution of the circulation system is appropriately reduced by supplying pure water or phosphoric acid aqueous solution from the pure water supply unit 41 or the phosphoric acid aqueous solution supply unit 43. Therefore, the silicon concentration in the phosphoric acid aqueous solution inside the inner tank 341 can be quickly optimized by the normal circulation.

[0090] exist Figure 3 In the example of , the normal circulation is also performed in the unloading process S13 after the immersion process S12. In this case, each processing liquid is supplied from each supply unit 41 to 43 during or after the immersion process S12, thereby, the phosphoric acid concentration and the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 can be quickly optimized during the period until the next etching process cycle starts. In addition, when the bypass circulation is performed in the immersion process S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 may drop. In contrast, the normal circulation is performed in the unloading process S13 after the immersion process S12, thereby, the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly increased.

[0091] In addition, Figure 3 In the example of , only a part of the immersion process S12 is set to perform the bypass circulation. However, the bypass circulation can be performed in the entire immersion process S12. In addition, the bypass circulation can also be performed using a part or all of the carrying-in process S11 or the carrying-out process S13.

[0092] In addition, the bypass cycle does not have to be performed in all etching process cycles. For example, the control unit 7 may also accept a change in whether to perform the bypass cycle through the operation unit each time the etching process cycle is performed. In addition, in each cycle, the timing of executing the bypass cycle may be set or changed through the operation unit. In addition, the control unit 7 may automatically execute the bypass cycle based on the establishment or non-establishment of a prescribed requirement. In this case, the control unit 7 may also have a determination unit that determines whether the prescribed requirement is met based on a threshold value. In addition, as prescribed requirements, for example, the etching amount of the substrate W, and the temperature of the phosphoric acid aqueous solution of the circulation system, the phosphoric acid concentration, or the silicon concentration, etc. may be set.

[0093] In addition, although the on-off valves and the flow control valves provided in the etching processing apparatus 1 are controlled by the control unit 7, they may be manually operated by an operator. Then, the normal cycle and the bypass cycle may be switched manually by an operator.

[0094] The present invention has been described in detail, but the above description is illustrative in all aspects and the present invention is not limited thereto. It should be understood that numerous modifications not illustrated can be thought of without departing from the scope of the present invention. The various structures described in the above embodiments and various modifications can be appropriately combined or omitted within the scope of mutual contradiction.

[0095] Description of Reference Numerals

[0096] 1 Etching treatment device

[0097] 100 Substrate liquid treatment device

[0098] 34 processing tanks

[0099] 341 inner groove

[0100] 341B bottom

[0101] 341P 1st opening

[0102] 343 outer groove

[0103] 343P 2nd opening

[0104] 36 substrate lifting mechanism

[0105] 50 1st piping

[0106] 501 concentration detector

[0107] 51 Pumps

[0108] 511, 513, 57, 61 on-off valve

[0109] 52 Heater

[0110] 531 Branch

[0111] 55 bypass piping

[0112] 58 Flow Control Valve

[0113] 59 Flow detector

[0114] 60 2nd piping

[0115] 61 On / Off Valve

[0116] 7. Control Unit

[0117] S11 Loading process

[0118] S12 Dipping process

[0119] S13 unloading process

[0120] T1, T3 normal cycle period

[0121] T2 bypass cycle period

[0122] W substrate.

Claims

1. A substrate processing device for processing a substrate, wherein the substrate processing device is characterized in that: A bottomed cylindrical inner tank having a first opening at the upper portion; an outer tank having a bottom and a cylindrical shape and provided on the outer periphery of the inner tank and having a second opening at the upper portion; a first pipe connecting the interior of the inner tank to the interior of the outer tank; a pump provided in the first pipe and supplying the processing liquid from the outer tank to the inner tank; a heater provided in the first pipe and configured to heat the processing liquid passing through the first pipe; A second pipe connecting a pipe portion between the heater and the inner tank in the first pipe and the outer tank; and a second pipe valve provided in the second pipe and configured to change the flow rate of the treatment liquid passing through the second pipe, a first pipe valve provided between a portion of the first pipe connected to the second pipe and the inner tank, and configured to change a flow rate of the treatment liquid passing through the first pipe; a bypass pipe branched from a branch portion between the heater and the first pipe valve and connected to the inner tank; as well as A bypass pipe valve is provided in the bypass pipe and changes a flow rate of the processing liquid passing through the bypass pipe.

2. The substrate processing device according to claim 1, characterized in that: One end of the first pipe is connected to the bottom of the inner tank.

3. The substrate processing device according to claim 1 or 2, characterized in that: The first pipe valve is provided between the heater and the inner tank in the first pipe.

4. The substrate processing device according to claim 3, characterized in that: The invention further includes a control unit connected to the first piping valve and the second piping valve and controlling the first piping valve and the second piping valve.

5. The substrate processing device according to claim 4, characterized in that: The control unit performs the following processing: a first circulation control process of opening the first piping valve and closing the second piping valve; and A second circulation control process is performed in which the first piping valve is closed and the second piping valve is opened.

6. The substrate processing device according to claim 3, characterized in that: The second pipe is connected between the branch portion in the bypass pipe and the bypass pipe valve.

7. The substrate processing device according to claim 1 or 2, characterized in that: The second pipe passes through the second opening and is connected to the interior of the outer tank.

8. A substrate processing method, characterized in that: Processing a substrate using the substrate processing apparatus according to any one of claims 1 to 7, The substrate processing method comprises: a) step of immersing the substrate in the processing liquid stored in the inner tank; b) a step of returning the treatment liquid passed through the first pipe to the inner tank in the step a), and returning the treatment liquid passed through the first pipe to the outer tank via the second pipe; and c) a step of heating the processing liquid passing through the first pipe in the step b).

Images