Pressure sintering apparatus and method for manufacturing electronic components by pressure-assisted low temperature sintering process

Abstract

A method for manufacturing an electronic component (34, 34', 34") by a pressure-assisted low temperature sintering process is disclosed. The pressure-assisted low temperature sintering process is performed by using a pressure sintering device (2) having an upper mold (4) and a lower mold (6). The upper mold (4) and / or the lower mold (6) are provided with a first pressure pad (10, 10", 10"', 210, 210", 210"'). The method comprises the following steps: placing a first component (26) on a first sintering layer (24) provided on a top layer (22) of a first substrate (20+12+22) to form a first electronic component (34); placing at least a second component (26', 26") on a second sintering layer (24", 24") provided on a top layer (22', 22") of a second substrate (20'+12'+22', 20"+12"+22") in a horizontal plane above or below the first electronic component (34) to be formed. ””) to form a second electronic component (34', 34”); placing a second pressure pad (10', 10", 10"', 10"", 10""', 210', 210", 210"', 210""') between the first electronic component (34) to be formed and the second electronic component (34', 34”); and connecting the upper mold (4) and the lower mold (6) by means of the first sintered layer (24) by pressing the upper mold (4) and the lower mold (6) toward each other. A first component (26) and a top layer (22) of a first substrate (20+12+22) are bonded to form a first electronic component (34), and a second component (26', 26") and a top layer (22', 22") of a second substrate (20'+12'+22', 20"+12"+22") are bonded by means of a second sintering layer (24", 24") to form a second electronic component (34', 34"), wherein the sintering device (2) is heated simultaneously. The method may further include the step of covering the first component (26) with a first protective foil (18) arranged to engage with the first pressure pad (10, 210). The method may also include the step of covering the second component (26', 26") with a second protective foil (18', 18"). One or more of the pressure pads (10, 10', 10", 10"', 10"", 10""') may be deformable pressure pads (210, 210', 210", 210"', 210"", 210""') which may include a fluid contained in a housing. A plate (36, 36') may be arranged between adjacent electronic components (34, 34', 34"), wherein the plate (36) may be provided with a heating element (32') or the plate (36, 36') may be heated by an induction device (232). The first electronic component (34, 34', 34") or the second electronic component (34, 34', 34") may include a base plate (28, 28', 28") which may serve as an additional pressure pad.The first electronic component and the second electronic component (34, 34', 34") can be double-sided electronic components including an insulating member (12, 12', 12") having a top surface provided with a first sintered layer (24, 24", 24'"), the first component (26, 26", 26'") being placed on the first sintered layer, and the insulating member having a bottom surface provided with a second sintered layer (24', 24'"), the second component (26', 26'") being arranged on the second sintered layer.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing an electronic component by a pressure-assisted low temperature sintering process, which is performed by using a pressure sintering device. The present invention also relates to a pressure sintering device for manufacturing an electronic component via a pressure-assisted low temperature sintering process. Background Art

[0002] It is known that pressure-assisted low temperature sintering of silver paste can be used as an alternative to solder reflow as a die attach solution. By using quasi-hydrostatic pressure, the sintering temperature can be reduced. The popularity of this technology is increasing due to the fact that it is also suitable for high temperature packaging.

[0003] Since the prior art has several limitations in terms of production capacity, it would be desirable to be able to provide an alternative method for manufacturing electronic components by using a pressure-assisted low temperature sintering process, wherein the method allows for increased production capacity. Likewise, it would be desirable to be able to provide an alternative pressure sintering apparatus for manufacturing electronic components via a pressure-assisted low temperature sintering process, wherein the pressure sintering apparatus has increased production capacity. Summary of the invention

[0004] The method according to the present invention is a method for manufacturing an electronic component by a pressure-assisted low temperature sintering process, the pressure-assisted low temperature sintering process being performed by using a pressure sintering device having an upper die and a lower die, wherein the upper die and / or the lower die is provided with a first pressure pad, wherein the method comprises the following steps:

[0005] - placing a first sinterable component on a first sintering layer provided on a top layer of the first substrate;

[0006] - joining the sinterable component and the top layer of the first substrate to form the first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is heated at the same time,

[0007] The method applies the following steps before pressing the upper die and the lower die toward each other:

[0008] - placing at least a second sinterable component on a second sintering layer provided on a top layer of the second substrate in a horizontal plane above the first electronic component or below the first electronic component;

[0009] - placing a second pressure pad between the first electronic component and a second electronic component comprising a second sinterable component arranged on a second sintering layer provided on a top layer of the second substrate.

[0010] Hereby, the method makes it possible to increase the production capacity. By stacking electronic components in such a way that they are arranged in several horizontal planes (layers), the production capacity can be increased. Such electronic components can include a substrate (such as a direct copper bonding (DCB) substrate) on which are placed various components such as semiconductors (e.g., IGBTs, MOSFETs or equivalents), passive components (such as resistors, capacitors or inductors), and connecting components (such as wire bonds).

[0011] The method is a method for manufacturing electronic components by a pressure-assisted low-temperature sintering process.

[0012] The method is implemented by using a pressure sintering device having an upper die and a lower die, wherein the upper die and / or the lower die is provided with a first pressure pad.

[0013] The structure of the first electronic component can be arranged in a pressure sintering device by placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate, and coupling the sinterable component and the top layer of the first substrate while pressing an upper mold and a lower mold toward each other in a manner that simultaneously heats the sintering device to form a first electronic component.

[0014] The sintered layer can be any suitable type of sintered layer. The sintered layer material used is preferably silver (Ag) available in the form of a sintered paste comprising silver. In addition to finely divided silver, this paste may also contain several organic components, which can act as binders, dispersants and diluents. Sintered layers comprising silver alloys or other metals are also possible.

[0015] In a horizontal plane above or below the first electronic component, at least a second sinterable component is placed on a second sintering layer provided on a top layer of a second substrate; before pressing the upper mold and the lower mold toward each other, a second pressure pad is placed between the first electronic component and the second electronic component, i.e., several electronic components (substrates) are stacked in such a way that they are arranged in several horizontal planes (layers). Therefore, the production capacity can be improved because a plurality of layers of electronic components can be sintered simultaneously.

[0016] An advantage may be that the method comprises the step of covering the first sinterable component with a first protective foil arranged to engage with the first pressure pad. Hereby, the protective foil together with the pressure pad makes it possible to ensure that a uniform pressure distribution is provided over the entire substrate of the first electronic component. In addition, the protective foil separates the first sinterable component from the first pressure pad and protects the first sinterable component from contamination and adhesion, for example due to material abrasion, in particular silicone abrasion of the pressure pad. Additional advantages of using a protective foil are found in embodiments where the pressure pad is substantially flat and hard and the electronic component has surfaces to which force is applied via the pressure pad, and these surfaces are not all in the same plane. Here, small variations of 100 μm or less can be absorbed by the resilience found in the foil material. Suitable foils may include polytetrafluoroethylene (PTFE) (such as, Teflon TM ) or perfluoroalkoxyalkane (PFA).

[0017] It may be advantageous if the method comprises the step of covering the second sinterable component with a second protective foil.Herein, the protective foil together with the pressure pad makes it possible to ensure that a uniform pressure distribution is provided over the entire substrate of the second electronic component.

[0018] The use of a protective foil may also allow for a better positioning of the second electronic component on the first electronic component.

[0019] In one embodiment the protection foil is made of a thermoplastic polymer.An advantage may be that the protection foil has a low coefficient of friction, preferably below 0.2, such as 0.05-0.10.

[0020] In one embodiment, the sinterable component is a semiconductor.

[0021] An advantage may be that the method applies the step of attaching the base plate to the base plate. Hereby, a component may be constructed having one or more structures sintered to the base plate.

[0022] In one embodiment, one or more of the pressure pads are deformable pressure pads, the material of which is soft and will tend to enclose the components placed on the substrate and thus transfer the pressure applied between the upper mold and the lower mold to adjacent objects in all directions rather than uniaxially. Therefore, the pressure is applied in a hydrostatic manner, and the process can also be called a quasi-hydrostatic pressure sintering process. In this embodiment, the method is implemented by using a pressure sintering device having an upper mold and a lower mold, wherein the upper mold and / or the lower mold is provided with a first deformable pressure pad. The use of a deformable pressure pad makes it possible to evenly distribute pressure toward an electronic component having one or more structures protruding from the rest of the electronic component.

[0023] It may be advantageous if the deformable pressure pad is at least partially made of silicone.

[0024] In one embodiment, the deformable pressure pad includes a fluid contained in a housing. Hereby, the deformable pressure pad is able to evenly distribute pressure toward the underlying electronic component. This is particularly important in configurations where the electronic component includes one or more structures that protrude from the rest of the electronic component.

[0025] In one embodiment, the thickness of the deformable pressure pad is in the range of 300 μm-3 mm.

[0026] In one embodiment, the thickness of the deformable pressure pad is in the range of 1-2 mm.

[0027] In one embodiment, the thickness of the protection foil is in the range of 1-500 μm.

[0028] In one embodiment, the thickness of the protective foil is in the range of 50-500 μm.

[0029] In one embodiment, the protective foil is made of polytetrafluoroethylene (PTFE) or perfluoroalkoxyalkane (PFA).

[0030] The pressure pad should be flexible and thus allow the pressure pad to deform, thereby adapting to the geometry of the structure adjoining the pressure pad.

[0031] It may be advantageous if the board is arranged between adjacent electronic components.

[0032] In one embodiment, the plate has a planar geometry.

[0033] In one embodiment, the plate has a uniform thickness.

[0034] It may be advantageous to provide heating by using one or more heating elements integrated in the upper mould and / or the lower mould.

[0035] In one embodiment, the heating element is provided as a tube.

[0036] In one embodiment, heating is provided by using one or more electrical heating elements. These electrical heating elements may be integrated in the upper mold and / or the lower mold.

[0037] In one embodiment, the heating element is provided as one or more heating wires or cables.

[0038] In one embodiment, heating is provided by using one or more fluid-based heating elements. These heating elements may be integrated into the upper mold and / or lower mold. The heating elements may be liquid-based.

[0039] In one embodiment, heating is provided by using one or more heating elements integrated into the plate.This may be advantageous as the plate will typically be arranged in a position where it can distribute heat to a centrally arranged structure.

[0040] In one embodiment, the plate is heated by induction means.In this embodiment, means for generating a suitable induction field are placed adjacent to the apparatus for pressure sintering, and the plate at least partially comprises a material capable of being inductively heated.

[0041] In one embodiment, the first electronic component or the second electronic component comprises a base plate used as an additional pressure pad.By using the base plate instead of the additional pressure pad, no separate additional pressure pad is required and the method of the invention is simpler and easier to implement than prior art methods.

[0042] The pressure sintering device according to the present invention is a pressure sintering device for manufacturing electronic components via a pressure-assisted low-temperature sintering process, wherein the pressure sintering device comprises:

[0043] - an upper die and a lower die arranged to move relative to each other, wherein the upper die and / or the lower die is provided with a first pressure pad, wherein the pressure sintering device is configured to heat and provide pressurization of the electronic component arranged between the upper die and the lower die,

[0044] The pressure sintering device comprises at least one additional pressure pad arranged to separate the first electronic component from the second electronic component when the first electronic component and the second electronic component are arranged between the upper mold and the lower mold.

[0045] The pressure sintering apparatus can improve production capacity by stacking electronic components (substrates) in such a manner that the electronic components (substrates) are arranged in several levels (layers).

[0046] In one embodiment, one or more of the pressure pads are deformable pressure pads, the material of which is soft and will tend to enclose the components placed on the substrate and thus transfer the pressure applied between the upper mold and the lower mold to adjacent objects in all directions rather than uniaxially. Therefore, the pressure is applied in a hydrostatic manner, and the process can also be called a quasi-hydrostatic pressure sintering process. In this embodiment, the method is implemented by using a pressure sintering device having an upper mold and a lower mold, wherein the upper mold and / or the lower mold is provided with a first deformable pressure pad. The use of a deformable pressure pad makes it possible to evenly distribute pressure toward an electronic component having one or more structures protruding from the rest of the electronic component.

[0047] An advantage may be that the upper mould and / or the lower mould is provided with a cavity configured to receive the first deformable pressure pad. Hereby, the first deformable pressure pad may be integrated in the cavity and thus provide a surface through which the pressure may be transferred to the underlying structure of the electronic component in a manner in which the pressure is evenly distributed. Thus, damages due to excessive peak forces may be avoided. Furthermore, it is easier to implement pressure control so that the sintering process is implemented in an optimized manner.

[0048] In one embodiment, the deformable pressure pad is at least partially made of silicone.Testing has revealed that a deformable pressure pad made of silicone is suitable for use.

[0049] It may be an advantage that the deformable pressure pad comprises a fluid contained in a housing.Thereby, the deformable pressure pad may evenly distribute the pressure from the upper mould towards the underlying structure.

[0050] Preferably, the fluid is an incompressible fluid, preferably a liquid at room temperature.

[0051] In one embodiment, the thickness of the deformable pressure pad is in the range of 300 μm-3 mm.

[0052] In a preferred embodiment, the thickness of the deformable pressure pad is in the range of 1-2 mm.

[0053] It may be advantageous if the pressure sintering device comprises one or more heating elements integrated in the upper mould and / or the lower mould.

[0054] In one embodiment, a pressure sintering apparatus includes a plate configured to be disposed between adjacent electronic components.

[0055] It may be beneficial if one or more heating elements are integrated in the plate.

[0056] In one embodiment, the plate is heated by induction means.In this embodiment, means for generating a suitable induction field are placed adjacent to the apparatus for pressure sintering, and the plate at least partially comprises a material capable of being inductively heated.

[0057] In one embodiment, the first electronic component or the second electronic component comprises a base plate used as an additional pressure pad. By using the base plate instead of the additional pressure pad, no separate additional pressure pad is required, and the pressure sintering device of the present invention is simpler and easier to assemble and use than the prior art devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] The present invention will be more fully understood from the detailed description given below. The accompanying drawings are given by way of illustration only and therefore, they are not limiting of the present invention. In the drawings:

[0059] Figure 1A A prior art pressure sintering device is shown;

[0060] Figure 1B A pressure sintering device according to the present invention is shown;

[0061] Figure 2A Another pressure sintering device according to the present invention is shown;

[0062] Figure 2B A further pressure sintering device according to the present invention is shown;

[0063] Figure 3 A further pressure sintering device according to the present invention is shown;

[0064] Figure 4A A schematic diagram of a pressure sintering device according to the present invention is shown;

[0065] Figure 4B A schematic diagram showing another pressure sintering device according to the present invention is shown;

[0066] Figure 4C A schematic diagram of a pressure sintering device according to the present invention is shown;

[0067] Figure 4D A schematic diagram showing another pressure sintering device according to the present invention is shown;

[0068] Figure 5A A pressure sintering device according to the present invention is shown, the pressure sintering device comprising a plate;

[0069] Figure 5B It shows that Figure 5A A pressure sintering apparatus such as the one shown in , wherein the plate is removed;

[0070] Figure 5C A pressure sintering device according to the present invention is shown;

[0071] Figure 5D A pressure sintering device according to the present invention is shown, which comprises two plates;

[0072] FIG6 shows a flow chart illustrating the steps of the method according to the present invention;

[0073] Figure 7 A pressure sintering device according to the present invention is shown, which uses a base plate, and

[0074] Figure 8 A pressure sintering device according to the invention is shown, which comprises an induction heating device. DETAILED DESCRIPTION

[0075] Reference will now be made in detail to the accompanying drawings for the purpose of illustrating preferred embodiments of the present invention. Figure 1B The pressure sintering device 2 of the present invention is shown in FIG.

[0076] Figure 1A A prior art pressure sintering device 2 is shown, which includes an upper mold 104, which includes a top portion 108 provided with a pressure pad 110. The prior art pressure sintering device 102 also includes a lower mold 106, which includes a bottom portion 116 and an end portion 130 arranged on the top of the bottom portion 116, wherein a plurality of heating elements 132 are integrated in the bottom portion 116. Lower mold 106. A bottom plate 128 is arranged on the end portion 130. Two electronic components are spaced apart on the bottom plate 128 and arranged adjacent to each other. Each of the electronic components includes a sintered layer 124' placed on top of the bottom plate 128. The lower conductive layer 120 is arranged on top of the sintered layer 124'. The insulators 112 are each arranged on top of the lower conductive layer 120. Two upper conductive layers 122 are placed on the insulator 112 , and a sinterable component 126 is arranged on a sintering layer 124 disposed on top of each of the upper conductive layers 122 .

[0077] It can be seen that the prior art pressure sintering apparatus 102 has limited production capacity due to the limited space available in the cavity of the lower mold 106. The prior art pressure sintering apparatus 102 only allows the production of a single "electronic component layer".

[0078] Figure 1B An embodiment of a pressure sintering device 2 according to the present invention is shown. The pressure sintering device 2 includes an upper mold 4, which includes a top portion 8 provided with pressure pads 10, 210. The pressure sintering device 2 also includes a lower mold 6, which includes a bottom portion 16 and an end portion 30 arranged on the top of the bottom portion 16. A plurality of heating elements 32 are integrated in the bottom portion 16. The lower mold 6 also includes side portions 14, 14' extending from the end portion 30. The end portion 30 and the side portions 14, 14' define a cavity in which a plurality of components are arranged.

[0079] A base plate 28' is arranged in the bottom end of the cavity. Two electronic components 34' are arranged on the base plate 28'. Each electronic component 34' includes a sintered layer 24''' placed on top of the base plate 28''. In each electronic component 34'', a lower conductive layer 20'' is arranged on top of the sintered layer 24''''. Insulators 12'' are each arranged on top of the lower conductive layer 20''. In addition, two upper conductive layers 22'' are placed on the insulators 12''.

[0080] The structure of the lower conductive layer 20", the insulator 12" and the upper conductive layer 22" can advantageously be supplied by a direct copper bonding (DCB) substrate. Such substrates are well known and include a lower conductive layer, an upper conductive layer and an insulating layer. The insulating layer is disposed between the upper conductive layer and the lower conductive layer. The insulating layer electrically isolates the upper conductive layer and the lower conductive layer. For example, the conductive layer can be a copper layer, although alternatives (such as aluminum) are possible. The insulating layer can be a ceramic layer. Possible materials for the insulating layer include aluminum oxide (Al2O3), aluminum nitride (AIN) and beryllium oxide (BeO). The skilled person will be aware of many alternative materials that can be used. A circuit structure can be created in the upper copper layer and can be filled with semiconductor switches, capacitors and / or resistors as required to form a functional circuit.

[0081] In each electronic component 34", a sinterable component 26" is placed on a sintering layer 24"" arranged on top of each of the upper conductive layers 22". A protective foil 18" covers the sinterable component 26". The pressure pads 10", 210" are joined to the protective foil 18" in such a way that the protective foil 18" is sandwiched between the sinterable component 26" and the pressure pads 10", 210". A portion of the protective foil 18" extends along the entire height of the upper conductive layer 22" and the insulator 12".

[0082] The bottom plate 28' is arranged on top of the pressure pad 10", 210". Two electronic components 34' are arranged on the bottom plate 28', wherein each electronic component 34' comprises the same structure as the electronic component 34" arranged under the protective foil 18".

[0083] Thus, each electronic component 34' comprises a sintered layer 24'" placed on top of a base plate 28'. A lower conductive layer 20' is arranged on top of the sintered layer 24'", and an insulator 12' is arranged on top of the lower conductive layer 20'. Two upper conductive layers 22' are arranged on the insulator 12', and a sinterable component 26' is arranged on the sintered layer 24' provided on top of each of the upper conductive layers 22'.

[0084] The protective foil 18' covers the sinterable components 26' and the pressure pad 10' is joined to the protective foil 18' in such a way that the protective foil 18' is sandwiched between the sinterable components 26' and the pressure pad 10', 210'. The protective foil 18' extends along the entire height of the upper conductive layer 22' and the insulator 12'. The protective foil 18' ensures that a uniform pressure distribution is provided over the entire array of sinterable components 26'. In addition, the protective foil separates the sinterable components 26' from the pressure pad 10', 210' and protects the sinterable components 26' from contamination and adhesion, for example due to material abrasion.

[0085] The bottom plate 28 is arranged on top of the pressure pads 10', 210'. Two electronic components 34 are placed on the bottom plate 28. Each electronic component 34 includes the same structure as the electronic component 34" arranged under the protective foil 18" and the electronic component 34' arranged under the protective foil 18'. Therefore, each electronic component 34 includes a sintered layer 24' arranged on top of the bottom plate 28. The lower conductive layer 20 is arranged on top of the sintered layer 24', and the insulator 12 is arranged on top of the lower conductive layer 20. Two upper conductive layers 22 are arranged on the insulator 12, and the sinterable component 26 is arranged on the sintered layer 24 provided on top of each of the upper conductive layers 22.

[0086] The protective foil 18 covers the sinterable component 26. The protective foil 18 extends along the entire height of the upper conductive layer 22 and the insulator 12.

[0087] exist Figure 1B , the configuration of the top part 8 is shown, wherein the top part 8 is arranged above the lower mold 6. It can be seen that the pressure pads 10, 210 of the top part 8 are shaped to be suitable for the geometry of the structures 22, 24, 26 protruding from the insulator 12 of the electronic component 34.

[0088] In an alternative embodiment, it may not be necessary to shape the top portion of the pressure pad 10, 210 to fit the geometry of the structures 22, 24, 26 protruding from the insulator 12 of the electronic component 34, and the lower profile of the pressure pad 10, 210 can remain substantially flat. In this case, the forces applied to the electronic components 34 will be applied to the highest points of those components. If there are small differences in the height of the components, for example if they are less than 50 μm or preferably less than 20 μm, an acceptable force distribution is produced and the pressure applied between the upper mold 4 and the lower mold 6 (not shown in this figure) by the stack of electronic components 34, 34", 34"' is substantially uniaxial.

[0089] The present invention allows the electronic components 34, 34', 34" to be manufactured by a pressure-assisted low-temperature sintering process, which is performed by using a pressure sintering device 2. The method according to the present invention applies the following steps before pressing the upper mold 4 and the lower mold 6 toward each other: placing the second pressure pad 10', 210' between the first electronic component 34 and the second electronic component 34'. Hereby, a sintering process that allows the capacity of the pressure sintering device 2 to be improved can be implemented.

[0090] Figure 2AAnother embodiment of a pressure sintering device 2 according to the present invention is shown. The pressure sintering device 2 includes an upper mold 4, which includes a top portion 8 provided with pressure pads 10, 210. The pressure sintering device 2 includes a lower mold 6, which has a bottom portion 16 and an end portion 30 arranged on the top of the bottom portion 16. A plurality of heating elements 32 are integrated in the bottom portion 16. The lower mold 6 includes side portions 14, 14' extending from the end portion 30. The side portions 14, 14' and the end portion 30 define a cavity in which a plurality of components are arranged.

[0091] A bottom plate 28' is arranged in the bottom end of the cavity. Two first electronic components 34' are arranged on the bottom plate 28'. The two electronic components 34' include: a sintered layer 24'", which is placed on top of a base plate 28'; a lower conductive layer 20', which is arranged on the sintered layer 24'", an insulator 12', which is placed on the sintered layer 24'", two spaced-apart upper conductive layers 22', which are arranged on the insulator 12'; a sintered layer 24', which is arranged on top of each upper conductive layer 22'; and a sinterable component 26', which is arranged on top of each sintered layer 24'. The protective foil 18' is arranged to protect the sinterable component 26', and therefore it covers the sinterable component 26'. The protective foil 18' is arranged in such a way that multiple portions of it extend along the entire height of the upper conductive layer 22' and the insulator 12'. However, in one embodiment, the protective foil 18' does not extend along the entire height of the upper conductive layer 22' and the insulator 12'.

[0092] The pressure pad 10', 210' is engaged with the protective foil 18' in such a way that the protective foil 18' is sandwiched between the sinterable component 26' and the pressure pad 10', 210'. A plate 36 provided with a plurality of heating elements 32' is arranged on top of the pressure pad 10', 210'. The plate 36 is able to evenly distribute the pressure (originating from the structure arranged above the plate 36) to the pressure pad 10', 210'. At the same time, the plate 36 is able to heat the surrounding structure.

[0093] A bottom plate 28 is arranged on top of the plate 36, and two electronic components 34 are arranged on the bottom plate 28. The two electronic components 34 include: a first sintered layer 24', which is placed on top of the bottom plate 28; a lower conductive layer 20, which is arranged on the sintered layer 24'; an insulator 12, which is placed on the sintered layer 24'; two spaced-apart upper conductive layers 22, which are arranged on the insulator 12; a second sintered layer 24, which is arranged on top of each upper conductive layer 22; and a sinterable component 26, which is arranged on top of each sintered layer 24. In addition, a protective foil 18 covers the sinterable components 26. The protective foil 18' is arranged in a configuration in which its multiple portions extend along the entire height of the upper conductive layer 22 and the insulator 12.

[0094] The pressure pads 10 , 210 of the upper mold 4 are formed to fit the geometry of the structures 22 , 24 , 26 protruding from the insulator 12 .

[0095] Figure 2B Shows the corresponding Figure 2A The pressure sintering device 2 of the pressure sintering device shown in FIG. The side portions 14 , 14 ′ and the end portion 30 define a cavity configured to receive a plurality of components. Figure 2A In the embodiment, the plate 36 is disposed between the uppermost base plate 28 and the pressure pads 10', 210', however, Figure 2B , plate 36 has been removed.

[0096] Figure 3 Shows the corresponding Figure 1B The pressure sintering device 2 of the pressure sintering device shown in FIG. 1 is similar to the pressure sintering device 2 of FIG. 1 , but shows the use of deformable pressure pads 210 ′, 210 ″. The side portions 14 , 14 ′ and the end portions 30 define a cavity in which several components are arranged. However, in Figure 3 In the embodiment, the first plate 36 is disposed between the uppermost bottom plate 28 and the deformable pressure pad 210', and the second plate 36' is disposed between the uppermost bottom plate 28' and the deformable pressure pad 210". Even in Figure 3 Not shown in the drawing, heating elements can also be arranged in the plates 36 , 36 ′.

[0097] Figure 4A A schematic diagram of a pressure sintering device 2 according to the invention is shown. The method according to the invention can be implemented by using such a pressure sintering device 2. The pressure sintering device 2 comprises an upper mold 4 provided with a top part 8, which comprises a pressure pad 10, 210 integrated in the cavity of the top part 8.

[0098] The pressure sintering device 2 includes a lower die 6 configured to be pressed against the upper die 4 so as to implement the pressure-assisted low-temperature sintering process according to the present invention.

[0099] The first electronic component 34 and the second electronic component 34' are arranged between the upper mold 4 and the lower mold 6. In addition, the pressure pads 10', 210' are arranged between the electronic components 34, 34'. Therefore, the pressure sintering device 2 can be used to manufacture electronic components 34, 34' arranged in a stacked configuration (arranged in different layers, for example, vertically displaced from each other). Each electronic component 34, 34' includes a sinterable component 26, 26', which is arranged on a sintering layer 24, 27 provided on the insulator 12, 12'. Such sinterable components may include semiconductors (for example, IGBTs, MOSFETs or equivalents), passive components (such as resistors, capacitors or inductors), and connecting components (such as wire bonds).

[0100] Figure 4C Shows the corresponding Figure 4A The pressure sintering device 2 shown in the pressure sintering device. In addition, Figure 4A The same components shown in FIG. 1 are arranged between the upper die 4 and the lower die 6. However, in Figure 4C In the embodiment, the first protective foil 18 is disposed between the sinterable part 26 of the first electronic component 34 and the pressure pad 10 of the upper mold 4. Furthermore, the second protective foil 18' is arranged between the sinterable part 26' of the first electronic component 34 and the pressure pad 10'.

[0101] Figure 4B shows that it corresponds almost to Figure 4A The pressure sintering device 2 of the pressure sintering device shown in FIG. However, the lower mold 6 includes pressure pads 10 ″, 210 ″.

[0102] Figure 4D shows that it corresponds almost to Figure 4C The pressure sintering device 2 of the pressure sintering device shown in FIG. However, the lower mold 6 includes pressure pads 10 ″, 210 ″.

[0103] Figure 5A The pressure sintering device 2 according to the present invention is shown. The pressure sintering device 2 corresponds to Figure 4B The pressure sintering device shown in Figure 5A In, with Figure 4B The same components shown in FIG. 1 are arranged between the upper die 4 and the lower die 6. However, in Figure 5A In the embodiment, the plate 36 and the additional pressure pad 10" are arranged between the pressure pad 10', 210' and the second electronic component 34'. Thus, the plate 36 mechanically isolates the two electronic components 34, 34'.

[0104] Figure 5B The pressure sintering device 2 according to the present invention is shown. The pressure sintering device 2 corresponds to Figure 4B However, in the pressure sintering device shown in Figure 5A , a first double-sided electronic component 34 and a second double-sided electronic component 34' are arranged between an upper mold 4 and a lower mold 6. A pressure pad 10, 210 is arranged between the electronic components 34, 34'. The first double-sided electronic component 34 includes an insulating member 12 having a top surface provided with a first sintered layer 24, on which a first sinterable component 26 is placed. The bottom surface is provided with a second sintered layer 24', on which a second sinterable component 26' is arranged.

[0105] Likewise, the second double-sided electronic component 34' comprises an insulating member 12' having a top surface provided with a first sintered layer 24", on which a first sinterable component 26" is placed. The bottom surface is provided with a second sintered layer 24", on which a second sinterable component 26"' is arranged.

[0106] Figure 5C The pressure sintering device 2 according to the present invention is shown. The pressure sintering device 2 corresponds to Figure 5B However, in the pressure sintering device shown in Figure 5C In the embodiment, the additional single-sided electronic component 34" is arranged between the pressure pad 10', 210' and the second double-sided electronic component 34'. Furthermore, the additional pressure pad 10'" is arranged between the additional single-sided electronic component 34" and the second double-sided electronic component 34'.

[0107] Figure 5D The pressure sintering device 2 according to the present invention is shown. The pressure sintering device 2 corresponds to Figure 5A However, in the pressure sintering device shown in Figure 5D In the embodiment, the additional double-sided electronic component 34" is arranged between the pressure pad 10", 210" and the second single-sided electronic component 34'. In addition, the additional pressure pad 10", 210", the plate 36' and the further pressure pad 10""', 210""' (in this order) are arranged between the additional double-sided electronic component 34", and the second single-sided electronic component 34'.

[0108] Figure 5A , Figure 5B , Figure 5C and Figure 5D Demonstration: The method according to the invention allows the manufacture of both single-sided and double-sided electronic components, and these electronic components can be arranged in various configurations relative to each other. It can be seen that the method makes it possible to manufacture electronic components of more than two layers.

[0109] FIG6 is a flow chart showing the steps of the method according to the invention. The reference numerals used correspond to those used with reference to FIGS. 1 to 5 . A first step I comprises opening a pressure sintering device 2 having an upper die 4 and a lower die 6, wherein the upper die 4 and / or the lower die 6 are provided with a first pressure pad 10. In an alternative embodiment, this may be a deformable pressure pad 210. In this step, the pressure sintering device 2 is essentially opened in order to allow the structures to be joined by using the pressure-assisted low-temperature sintering process according to the invention to be arranged in the pressure sintering device 2.

[0110] The second step II comprises placing the first sinterable component 26 on the sintering layer 24 provided on the top layer 22 of the first substrate 12, thereby forming the first electronic component 34. In this step, the structure forming the first electronic component 34 is positioned in the pressure sintering device 2.

[0111] The third step III comprises placing a second sinterable component 26' on a sintering layer 24" provided on a top layer 22' of a second substrate 12', in a horizontal plane above the first sinterable component 26 or below the first substrate 12, thereby forming a second electronic component 34', wherein the pressure pad 10', 210' is arranged between the first electronic component 34 and the second electronic component 34'. In this step, the structure forming the second electronic component 34' is positioned in the pressure sintering device 2.

[0112] The fourth step IV comprises pressing the upper die 4 and the lower die 6 towards each other, thereby joining the sinterable parts 26, 26 and the corresponding top layers 22, 22', while simultaneously heating the sintering device 2. In this step, the sintering device 2 is used to perform a pressure-assisted sintering process.

[0113] The fifth step V comprises opening the pressure sintering device 2 and taking out the electronic components 34, 34' from the pressure sintering device 2. In this step, the sintering device 2 is basically opened and the electronic components 34, 34' are taken out.

[0114] It is important to emphasize that this method allows to arrange additional structures in more than two levels (layers). In addition, in each level / layer, several spaced apart electronic components can be manufactured, such as Figure 1B The electronic components shown in the.

[0115] Figure 7 A schematic diagram of a pressure sintering device 2 according to the invention is shown. The method according to the invention can be implemented by using such a pressure sintering device 2. The pressure sintering device 2 comprises an upper mold 4 provided with a top part 8, which comprises a pressure pad 10, 210 integrated in the cavity of the top part 8.

[0116] The pressure sintering device 2 includes a lower die 6 configured to be pressed against the upper die 4 so as to implement the pressure-assisted low-temperature sintering process according to the present invention.

[0117] The first electronic component 34 and the second electronic component 34' are arranged between the upper mold 4 and the lower mold 6. In addition, each electronic component 34, 34' includes a sinterable component 26, 26', which is arranged on a sintering layer 24, 27 arranged on the insulator 12, 12'. Such sinterable components may include semiconductors (e.g., IGBTs, MOSFETs or equivalents), passive components (such as resistors, capacitors or inductors), and connecting components (such as wire bonds). The insulator 12, 12' is in turn arranged on a further sintering layer 224, 224' arranged on the bottom plate 28, 28'. The bottom plate 28, 28' provides the utility of the pressure pads 10', 10", 10"', 10"", 210, 210", 210", 210"" used in other embodiments shown here, because they conduct the forces applied between the upper mold and the lower mold through the components to be sintered. Thus, the pressure sintering device 2 may be used to manufacture electronic components 34 , 34 ′ arranged in a stacked configuration (arranged in different layers, for example vertically displaced from each other).

[0118] Figure 8 A schematic diagram of a pressure sintering device 2 according to the invention is shown. The method according to the invention can be implemented by using such a pressure sintering device 2. The pressure sintering device 2 comprises an upper mold 4 provided with a top part 8, which comprises a pressure pad 10, 210 integrated in the cavity of the top part 8.

[0119] The pressure sintering device 2 includes a lower die 6 configured to be pressed against the upper die 4 so as to implement the pressure-assisted low-temperature sintering process according to the present invention.

[0120] The first electronic component 34 and the second electronic component 34' are arranged between the upper mold 4 and the lower mold 6. In addition, the pressure pads 10', 210' are arranged between the electronic components 34, 34'. In this embodiment, the pressure pads 10', 210' at least partially include a ferromagnetic material suitable for heating by an induction heating process. The figure also shows an induction heating device 232, such as an energized coil (shown here in cross section), which surrounds the pressure sintering device during the sintering operation. The heat generated by applying induction heating is within the pressure pads 10', 210', and is therefore a great advantage for heating the sintered layer 24. Therefore, the pressure sintering device 2 can be used to manufacture electronic components 34, 34' arranged in a stacked configuration (arranged in different layers, for example vertically displaced from each other).

[0121] In some embodiments, the pressure pad 10 referenced in the figure may include a deformable pressure pad 210. Likewise, in some embodiments, the additional pressure pad 10' may include a deformable pressure pad 210'. In a similar manner, in some embodiments, the additional pressure pads 10", 10"', 10"", 10""' may include deformable pressure pads 210", 210"', 210"", 210""'.

[0122] List of Reference Numerals

[0123] 2 Pressure sintering device

[0124] 4 upper mold

[0125] 6 Lower die

[0126] 8 Top section

[0127] 10, 10', 10", 10"', 10"" Pressure Pads

[0128] 12, 12', 12" Insulator

[0129] 14, 14' side section

[0130] 16 Bottom section

[0131] 18, 18', 18", 18"' foil

[0132] 20, 20', 20" lower conductive layer

[0133] 22, 22', 22" upper conductive layer

[0134] 24, 24', 24" sintered layers

[0135] 24”'、24””、24””' sintered layer

[0136] 26, 26', 26", 26"', 26"" sinterable parts

[0137] 28, 28', 28" Base Plate

[0138] 30 End section

[0139] 32, 32' Heating element

[0140] 34, 34', 34" Electronics

[0141] 36, 36' board

[0142] 102 Pressure sintering device

[0143] 104 upper mold

[0144] 106 Lower die

[0145] 108 Top section

[0146] 110 Pressure Pad

[0147] 112 Insulator

[0148] 114, 114' side section

[0149] 116 bottom part

[0150] 118 foil

[0151] 120 Lower conductive layer

[0152] 122 upper conductive layer

[0153] 124 Sintering layer

[0154] 126 Semiconductors

[0155] 128 Base Plate

[0156] 130 End section

[0157] 132 Heating element

[0158] 134 Electronic components

[0159] 210, 210', 210", 210"' Deformable Pressure Pads

[0160] 210””、210””' Deformable Pressure Pad

[0161] 232 Induction Heating Devices

[0162] 224, 224' sintered layer

Claims

1. A method for manufacturing an electronic component (34, 34', 34'') by a pressure-assisted low-temperature sintering process, the pressure-assisted low-temperature sintering process being performed by using a pressure sintering device (2) having an upper mold (4) and a lower mold (6), wherein: The upper die (4) and / or the lower die (6) is provided with a first deformable pressure pad (10, 210), wherein the method comprises the following steps: - placing a first sinterable component (26) on a first sintering layer (24) provided on a top layer (22) of a first substrate (12, 20, 22); - bonding the sinterable component (26) and the top layer (22) of the first substrate (12, 20, 22) to form a first electronic component (34) by pressing the upper mold (4) and the lower mold (6) toward each other, wherein the pressure sintering device (2) is heated at the same time; Characterized in that the method applies the following steps before pressing the upper die (4) and the lower die (6) toward each other: - placing at least a second sinterable component (26') on a second sintering layer (24'') provided on a top layer (22') of a second substrate (12', 20', 22') in a horizontal plane above the first electronic component (34) or below the first electronic component (34); - placing a second deformable pressure pad (10', 210') between the first electronic component (34) and a second electronic component (34') comprising a second sinterable component (26'), the second sinterable component being arranged on a second sintering layer (24'') provided on a top layer (22') of the second substrate (12', 20', 22').

2. The method according to claim 1, characterized in that The method comprises the step of covering the first sinterable component (26) with a first protective foil (18) arranged to engage with the first deformable pressure pad (10, 210).

3. The method according to claim 1, characterized in that The method comprises the step of covering the second sinterable component (26') with a second protective foil (18').

4. The method according to any one of the preceding claims, characterized in that The method employs the step of attaching the substrate (12, 20, 22) to a base plate (28).

5. The method according to claim 1, characterized in that The deformable pressure pads (210, 210', 210", 210'", 210''", 210'''', 210''''') include a fluid contained in a housing.

6. The method according to claim 5, characterized in that The thickness of these deformable pressure pads (210, 210', 210", 210''', 210'''', 210''''') is in the range of 300 μm-3 mm.

7. The method according to claim 6, characterized in that The thickness of these deformable pressure pads (210, 210', 210'', 210''', 210'''', 210''''') is in the range of 1-2 mm.

8. The method according to claim 2 or 3, characterized in that: The thickness of these protective foils ( 18 , 18 ′, 18 ″) is in the range of 1-500 μm.

9. The method according to claim 8, characterized in that The thickness of these protective foils ( 18 , 18 ′, 18 ″) is in the range of 50-500 μm.

10. The method according to claim 1, characterized in that The board (36, 36') is arranged between adjacent electronic components (34, 34', 34'').

11. The method according to claim 10, characterized in that The plate (36, 36') is heated by an induction device (232).

12. The method according to claim 1, characterized in that The first electronic component (34, 34', 34") or the second electronic component (34, 34', 34") comprises a base plate used as an additional pressure pad (10').

13. A pressure sintering device (2) for manufacturing electronic components (34, 34', 34'') via a pressure-assisted low-temperature sintering process, wherein: The pressure sintering device (2) comprises: - an upper die (4) and a lower die (6) arranged to move relative to each other, wherein the upper die (4) and / or the lower die (6) are provided with a first deformable pressure pad (10, 210), wherein the pressure sintering device (2) is configured to heat and provide pressurization of an electronic component (34, 34', 34'') arranged between the upper die (4) and the lower die (6), The pressure sintering device (2) is characterized in that it comprises at least one additional deformable pressure pad (10', 210'), which is arranged to separate the first electronic component (34, 34', 34'') from the second electronic component (34, 34', 34'') when the first electronic component (34, 34', 34'') and the second electronic component (34, 34', 34'') are arranged between the upper mold (4) and the lower mold (6).

14. The pressure sintering device (2) according to claim 13, wherein: The deformable pressure pads (210, 210', 210", 210'", 210''", 210'''', 210''''') include a fluid contained in a housing.

15. The pressure sintering device (2) according to claim 13 or 14, characterized in that: The pressure sintering device (2) includes a plate (36, 36') configured to be arranged between adjacent electronic components (34, 34', 34'').

16. The pressure sintering device (2) according to claim 15, characterized in that: One or more heating elements (32') are integrated into the plate (36, 36').

17. The pressure sintering device (2) according to claim 15, characterized in that: The plate (36, 36') is heated by an induction device (232).

18. The pressure sintering device (2) according to claim 13, characterized in that: The first electronic component (34, 34', 34") or the second electronic component (34, 34', 34") includes a base plate that serves as the additional pressure pad (10').

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