Central structure preparation method, X-ray zone plate preparation method and X-ray zone plate

Abstract

The embodiment of the present invention discloses a method for preparing a central structure and a method for preparing an X-ray zone plate, wherein the method for preparing the central structure comprises: removing the coating layer of the target optical fiber to obtain an original central structure, wherein the original central structure comprises an original fiber core and an original cladding; stretching the original central structure to a preset size to obtain a processed central structure in the shape of a truncated cone, wherein the preset size comprises a first preset diameter, a second preset diameter and a preset length, wherein the first preset diameter is smaller than the second preset diameter; cutting the processed central structure to obtain a target central structure having a preset size. The method for obtaining a central structure of a preset size in the embodiment of the present invention solves the problems caused by the mold because a mold is not required, and realizes flexible and efficient preparation of a central structure having a preset diameter and a surface roughness at the nanometer level.

Description

Technical Field

[0001] The embodiments of the present invention relate to the fields of microelectronics and optical technology, and in particular to a method for preparing a central structure of an X-ray zone plate, a method for preparing an X-ray zone plate, and an X-ray zone plate. Background Art

[0002] Since the discovery of X-rays, due to their advantages such as short wavelength and large penetration depth, X-ray microscopy technology can be used to observe and detect the internal three-dimensional structure of thicker materials. This makes X-ray microscopy technology widely used in biology, medicine, materials and other fields. Among them, X-ray Fresnel zone plates (X-ray zone plates for short) are the core components of X-ray microscopy technology, which can achieve nanoscale resolution imaging.

[0003] The working principle of the X-ray zone plate is as follows: imaging is performed based on the diffraction principle of light, and the absorption coefficient of adjacent band materials to light is used to make adjacent outgoing light produce a phase difference of π, and the outgoing light has a diffraction enhancement effect at the focus. The imaging resolution of the X-ray zone plate is determined by the width of the outermost ring δ, where δ = 0.61-1.22ΔR, and ΔR represents the thickness of the outermost ring of the band. If a higher imaging resolution is required, the X-ray zone plate needs to have a sufficient thickness. Based on this, it is of great significance to prepare X-ray zone plates with a large aspect ratio. In order to prepare X-ray zone plates with a large aspect ratio, atomic layer deposition (ALD) technology is currently often used to deposit multilayer thin films and perform focused ion beam slicing. Since the X-ray zone plate has extremely high requirements for the central structure, one of the key issues in preparing X-ray zone plates using atomic layer deposition technology is the selection and preparation of the central structure of the X-ray zone plate. The requirements for the central structure of the X-ray zone plate include that the overall shape is symmetrical and truncated, the uniformity is good, and the surface roughness is at the nanometer level. The central structure of the X-ray zone plate is often prepared by methods such as die drawing or liquid infusion.

[0004] However, it is found that there are at least the following problems in the prior art. Specifically, since the mold model is fixed and the inner wall surface of the mold is easily worn during the preparation of the central structure of the X-ray zone plate, it will cause difficulties in selecting and controlling the size and surface roughness of the central structure. Summary of the invention

[0005] The embodiments of the present invention provide a method for preparing a central structure of an X-ray zone plate, a method for preparing an X-ray zone plate, and an X-ray zone plate, so as to flexibly and efficiently prepare a central structure with a preset diameter and a surface roughness at the nanometer level.

[0006] In a first aspect, an embodiment of the present invention provides a method for preparing a central structure of an X-ray zone plate, the method comprising:

[0007] Removing the coating layer of the target optical fiber to obtain an original central structure, wherein the original central structure includes an original core and an original cladding;

[0008] Stretching the original central structure to a preset size to obtain a truncated cone-shaped processing central structure, wherein the preset size includes a first preset diameter, a second preset diameter and a preset length, and the first preset diameter is smaller than the second preset diameter;

[0009] The processed central structure is cut to obtain a target central structure.

[0010] Furthermore, before removing the coating layer of the target optical fiber to obtain the original central structure, the method further includes:

[0011] The original optical fiber is cleaned to obtain the target optical fiber.

[0012] Further, removing the coating layer of the target optical fiber to obtain the original central structure includes:

[0013] The optical fiber coating stripping platform is used to remove the coating of the target optical fiber to obtain the original central structure.

[0014] Furthermore, the original central structure is stretched to a preset size to obtain a truncated cone-shaped processing central structure, including:

[0015] Fix one end of the original central structure on a base, apply a target tensile force to the base, and under preset stretching parameters, use an ultra-stable plasma heating device to stretch the original central structure from the other end of the original central structure to a preset size to obtain a truncated cone-shaped processing central structure, wherein the preset stretching parameters include the working mode of the ultra-stable plasma heating device and the working parameters of the ultra-stable plasma heating device, and the working parameters of the ultra-stable plasma heating device include the power of the ultra-stable plasma heating device, the stretching rate of the ultra-stable plasma heating device, and the stretching force of the ultra-stable plasma heating device.

[0016] Furthermore, the power of the ultra-stable plasma heating device is 450-800W, the stretching rate of the ultra-stable plasma heating device is 40-110μm / s; and the target tension is 1-50N.

[0017] Furthermore, the working mode of the ultra-stable plasma heating equipment is a unidirectional cone pulling mode.

[0018] Furthermore, the diameter of the target optical fiber is 80-400 μm, and the first preset diameter and the second preset diameter are 25-200 μm.

[0019] In a second aspect, an embodiment of the present invention further provides a method for preparing an X-ray zone plate, comprising:

[0020] Prepare a target central structure, wherein the target central structure is a target central structure prepared by the method according to the first aspect of the embodiment of the present invention;

[0021] Using atomic layer deposition technology to alternately deposit thin film ring-zone structures on the surface of the target central structure to obtain an original zone plate;

[0022] A protective layer is deposited on the surface of the original zone plate, and the original zone plate is cut using focused ion beam micro-nano processing technology to obtain a target zone plate.

[0023] Furthermore, the method of alternately depositing thin film ring-shaped band structures on the surface of the target central structure using atomic layer deposition technology to obtain an original zone plate includes:

[0024] The target central structure is suspended and fixed in an atomic layer deposition chamber. After performing a deposition operation, thin film ring-shaped band structures are alternately deposited on the surface of the target central structure to obtain an original wave zone plate. The deposition operation includes vacuuming, heating and nitrogen flow.

[0025] Furthermore, depositing a protective layer on the surface of the original zone plate and cutting the original zone plate using focused ion beam micro-nano processing technology to obtain a target zone plate includes:

[0026] Depositing a protective layer on the surface of the original zone plate to obtain a processed zone plate;

[0027] Fixing the processing zone plate to a focused ion beam system and adjusting the focus;

[0028] Under preset processing parameters, the treated zone plate is processed to a preset thickness by using a large beam cutting and a small beam surface polishing method to obtain a target zone plate, wherein the preset processing parameters include an acceleration voltage and an ion beam current.

[0029] Furthermore, the material of the thin film ring-band structure includes oxide, nitride and metal element.

[0030] Furthermore, the oxide includes any two of aluminum oxide, hafnium oxide, tantalum oxide and silicon oxide; the nitride includes any two of aluminum nitride, silicon nitride and gallium nitride; and the metal element includes any two of iridium, platinum, copper and palladium.

[0031] In a third aspect, an embodiment of the present invention further provides an X-ray zone plate, comprising a target center structure, wherein the target center structure is a target center structure prepared by the method described in the first aspect of the embodiment of the present invention.

[0032] In the embodiment of the present invention, the coating layer of the target optical fiber is removed to obtain the original central structure, the original central structure is stretched to a preset size to obtain a truncated cone-shaped processed central structure, and the processed central structure is cut to obtain a target central structure with a preset size. The above method of obtaining a central structure with a preset size does not require the use of a mold, thus solving the problem of selecting and controlling the size and surface roughness of the central structure caused by the fixed mold model and the easy wear of the inner wall surface of the mold in the prior art, and realizes the flexible and efficient preparation of a central structure with a preset size and a surface roughness at the nanometer level. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A method for preparing a central structure of an X-ray zone plate in an embodiment of the present invention;

[0034] Figure 2 is a schematic structural diagram of a target optical fiber in an embodiment of the present invention;

[0035] Figure 3 is a structural schematic diagram of an original central structure in an embodiment of the present invention;

[0036] Figure 4 It is another method for preparing the central structure of an X-ray zone plate in an embodiment of the present invention;

[0037] Figure 5 is a schematic diagram of a method for preparing a central structure of an X-ray zone plate in an embodiment of the present invention;

[0038] Figure 6 is an optical microscope image of a target central structure in an embodiment of the present invention;

[0039] Figure 7 is an optical microscope image of another target central structure in an embodiment of the present invention;

[0040] Figure 8 is an optical microscope image of another target central structure in an embodiment of the present invention;

[0041] Fig. 9 is an optical microscope image of another target central structure in an embodiment of the present invention;

[0042] Fig.10 is an optical microscope image of another target central structure in an embodiment of the present invention;

[0043] Fig.11 is an optical microscope image of another target central structure in an embodiment of the present invention;

[0044] Fig.12 is a flow chart of a method for preparing an X-ray zone plate in an embodiment of the present invention;

[0045] Fig.13 is a flow chart of another method for preparing an X-ray zone plate in an embodiment of the present invention;

[0046] Fig.14 Schematic diagram of a method for preparing an X-ray zone plate in an embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention, and the various features recorded in the embodiments can be combined to form multiple optional solutions. It is also necessary to explain that, for the convenience of description, only the parts related to the present invention are shown in the accompanying drawings, rather than all structures.

[0048] Figure 1 A flowchart of a method for preparing a central structure of an X-ray zone plate provided in an embodiment of the present invention is applicable to the case of flexibly and efficiently preparing a central structure with a preset diameter and a surface roughness at the nanometer level. The method can be performed by a central structure preparation device for an X-ray zone plate. Figure 1 As shown, the specific steps include:

[0049] Step 110: remove the coating layer of the target optical fiber to obtain an original central structure, which includes an original core and an original cladding.

[0050] In an embodiment of the present invention, Figure 2 As shown, a schematic diagram of the structure of a target optical fiber is given. Figure 2 From the inside to the outside, they are the original core 100, the original cladding 101 and the coating 11, that is, the target optical fiber may specifically include the original core 100, the original cladding 101 and the coating 11. Among them, the refractive indexes of the original core 100 and the original cladding 101 are different, and the refractive index of the original cladding 101 is greater than the refractive index of the original core 100. When the optical signal propagates in the original core 100, since the refractive index of the original cladding 101 is greater than the refractive index of the original fiber layer 100, the optical signal will be totally reflected at the interface between the original core 100 and the original cladding 101. The coating 11 can be used to protect the original core 100 and the original cladding 101 from damage by external stress. The above-mentioned original core 100 and original cladding 101 belong to the original central structure 10, that is, the original central structure 10 may include the original core 100 and the original cladding 101. As Figure 3 As shown, a schematic structural diagram of an original central structure is given.

[0051] In order to obtain a target central structure that meets the conditions, it is necessary to remove the coating of the target optical fiber to obtain the original central structure. Optionally, the optical fiber coating stripping platform can be used to remove the coating of the target optical fiber to obtain the original central structure. It can be understood that the original central structure is the target optical fiber with the coating removed. It should be noted that the coating of the target optical fiber can be completely removed, or the coating of the target optical fiber can be partially removed. The specific setting can be based on the actual situation and is not specifically limited here. Optionally, the coating located in a preset area on the target optical fiber can be removed to obtain the original central structure. That is, part of the coating of the target optical fiber can be removed, and the remaining coating of the target optical fiber can be retained. The preset area can be an area composed of each first position and each second position, wherein the first position can be one end of the target optical fiber, and the second position can be a position at a preset distance from the same end of the target optical fiber.

[0052] Step 120, stretching the original central structure to a preset size to obtain a truncated cone-shaped processing central structure, the preset size includes a first preset diameter, a second preset diameter and a preset length, and the first preset diameter is smaller than the second preset diameter.

[0053] In an embodiment of the present invention, the original central structure can be stretched to a preset size to obtain a truncated cone-shaped processing central structure, which can be understood as follows: the stretching parameters can be preset, and the preset stretching parameters can include the working mode of the ultra-stable plasma heating device and the working parameters of the ultra-stable plasma heating device. Among them, the working mode of the ultra-temperature plasma heating device can include a unidirectional taper working mode. The working parameters of the ultra-stable plasma heating device can include the power of the ultra-stable plasma heating device, the stretching rate of the ultra-stable plasma heating device, and the stretching force of the ultra-stable plasma heating device. It should be noted that since the requirements of the X-ray zone plate for the central structure include that the overall shape is symmetrical and truncated cone-shaped, the uniformity is good, and the surface roughness is at the nanometer level, therefore, for the processing central structure obtained by the ultra-stable plasma heating device, it mainly focuses on whether the overall shape is smooth and symmetrical, whether it is truncated cone-shaped, whether the diameter is uniform, and whether the taper meets the requirements. The factors affecting the uniformity of the diameter of the processing central structure mainly include plasma temperature, the power of the ultra-stable plasma heating device, the stretching rate and the stretching force. In addition, the size of the diameter is also affected by the above factors. Based on this, the power, stretching rate and stretching force of the ultra-stable plasma heating device can be set based on the preset size. Among them, the preset size may include a first preset diameter, a second preset diameter and a preset length, and the first preset diameter and the second preset diameter can be understood as the diameter required to be reached by the preset original central structure. The preset length can be understood as the length required to be reached by the preset original central structure, and the central structure with a diameter of the first preset diameter, the second preset diameter and the preset length can be used to prepare the X-ray zone plate later. The first preset diameter is smaller than the second preset diameter. The specific values ​​of the first preset diameter, the second preset diameter and the preset length can be set according to actual conditions and are not specifically limited here. Optionally, the first preset diameter and the second preset diameter can be 25-200μm. The working mode of the ultra-stable plasma heating device can be a unidirectional taper mode. The power of the ultra-stable plasma heating device can be 450-800W, and the stretching rate of the ultra-stable plasma heating device can be 40-110μm / s. Furthermore, the power of the ultra-stable plasma heating device can be 550W, and the stretching rate of the ultra-stable plasma heating device can be 80μm / s.

[0054] Under the preset stretching parameters, the ultra-stable plasma heating device can be used to stretch the original central structure by the set stretching distance to the preset size to obtain a truncated cone-shaped processing central structure. It can be understood that the diameter of the processing central structure is the first preset diameter and the second preset diameter. The stretching distance of the ultra-stable plasma heating device can be 3 cm.

[0055] Step 130: Cut the processed central structure to obtain a target central structure with a preset size.

[0056] In an embodiment of the present invention, after obtaining the processing center structure, the processing center structure can be cut to obtain a target center structure with a preset size. Specifically: a cutting device can be used to cut the target position of the preset processing center structure to obtain the target center structure. The target position can be a position at a preset length from one end of the stretching of the processing center. The cutting device can include an ultrasonic cutting knife and a laser cutting knife. It can be understood that the processing center structure is cut at the target position, and the diameter of the center structure before and after cutting remains unchanged. Based on this, the diameter of the target center structure is the same as the diameter of the processing center structure. Since the diameter of the processing center structure is the first preset diameter and the second preset diameter, the diameter of the target center structure is the first preset diameter and the second preset diameter. The shape of the target center structure is also a truncated cone shape, and the first preset diameter and the second preset diameter can be understood as the diameter of the two bottom surfaces of the truncated cone. It should be noted that a target center structure with a taper of 0.2°-1.8° can be obtained. It can be understood that the center structure in the preparation of the X-ray zone plate using the center structure with the diameter of the first preset diameter and the second preset diameter described above is the target center structure.

[0057] The above method of obtaining a central structure of a preset size does not require the use of a mold, and therefore solves the problem of selecting and controlling the size and surface roughness of the central structure due to the fixed mold model and the easy wear of the inner wall surface of the mold in the prior art. The above can be understood as follows: since there is no need to use a mold, the problem of the inability to select the size of the central structure due to the fixed mold model in the prior art, and the problem of difficulty in controlling the size of the central structure due to the easy wear of the inner wall surface of the mold, will not exist in the technical solution provided in the embodiment of the present invention. At the same time, since there is no need to use a mold, the problem of difficulty in selecting and controlling the surface roughness of the central structure due to the easy wear of the inner wall surface of the mold and the contact between the mold and the central structure in the prior art will not exist in the technical solution provided in the embodiment of the present invention.

[0058] The technical solution of this embodiment is to obtain the original central structure by removing the coating layer of the target optical fiber, stretch the original central structure to a preset size, obtain a truncated cone-shaped processed central structure, and cut the processed central structure to obtain a target central structure with a preset size. The above method of obtaining a central structure of a preset size does not require the use of a mold, thus solving the problem of selecting and controlling the size and surface roughness of the central structure caused by the fixed mold model and the easy wear of the inner wall surface of the mold in the prior art, and realizes the flexible and efficient preparation of a central structure with a preset size and a surface roughness at the nanometer level.

[0059] Optionally, based on the above technical solution, before removing the coating layer of the target optical fiber to obtain the original central structure, the method may further include: cleaning the original optical fiber to obtain the target optical fiber.

[0060] In an embodiment of the present invention, in order to ensure the surface cleanliness of the target optical fiber, the original optical fiber may be cleaned. Specifically, an organic solvent may be used to ultrasonically clean the original optical fiber to remove impurities such as oil stains on the surface of the original optical fiber. The organic solvent may include acetone and ethanol. Deionized water may be used for repeated ultrasonic cleaning. The number of organic solvent cleanings and the duration of each cleaning may be set according to actual conditions, and are not specifically limited here. The number of deionized water cleanings and the duration of each cleaning may also be set according to actual conditions, and are not specifically limited here. Optionally, the number of organic solvent cleanings may be 3-5 times, and the duration of each cleaning may be 5 minutes. The number of deionized water cleanings may be 3-5 times, and the duration of each cleaning may be 5 minutes.

[0061] Optionally, based on the above technical solution, the coating layer of the target optical fiber is removed to obtain the original central structure, which may specifically include: using an optical fiber coating stripping platform to remove the coating layer of the target optical fiber to obtain the original central structure.

[0062] In an embodiment of the present invention, an optical fiber coating stripping platform may be used to remove the coating of the target optical fiber to obtain the original center structure, wherein the optical fiber coating stripping platform may be an LC-Strip optical fiber coating stripping platform.

[0063] Optionally, based on the above technical solution, a fiber coating stripping platform is used to remove the coating of the target optical fiber to obtain the original central structure, which may specifically include: using a fiber coating stripping platform to remove the coating located in a preset area on the target optical fiber to obtain the original central structure.

[0064] In an embodiment of the present invention, the preset area may be an area consisting of first positions and second positions, wherein the first position may be one end of the target optical fiber, and the second position may be a position at a preset distance from the same end of the target optical fiber.

[0065] For example, the length of the target optical fiber may be 7 cm. The second distance from the same end of the target optical fiber may be 5 cm. It can be understood that the length of the target optical fiber from which the coating is removed is 5 cm.

[0066] Optionally, on the basis of the above technical solution, the original central structure is stretched to a preset size to obtain a truncated cone-shaped processing central structure, which may specifically include: fixing one end of the original central structure on a base, applying a target pulling force to the base, and under preset stretching parameters, using an ultra-stable plasma heating device to stretch the original central structure to a preset size to obtain a truncated cone-shaped processing central structure, the preset stretching parameters include the working mode of the ultra-stable plasma heating device and the working parameters of the ultra-stable plasma heating device, and the working parameters of the ultra-stable plasma heating device include the power of the ultra-stable plasma heating device, the stretching rate of the ultra-stable plasma heating device and the stretching force of the ultra-stable plasma heating device.

[0067] In an embodiment of the present invention, one end of the original central structure can be fixed on the base, and the parameters of the base such as up and down, left and right, front and back, and pitch angle can be adjusted to align the two ends of the original central structure. Based on this, in order to eliminate the bending caused by the gravity of the original central structure, a target tension can be applied to the base. The specific value of the target tension can be set according to actual conditions and is not specifically limited here. Optionally, the target tension can be 1-50N. Further, the target tension can be 10N.

[0068] The stretching parameters may be preset, and the preset stretching parameters may include the working mode of the ultra-stable plasma heating device and the working parameters of the ultra-stable plasma heating device. Among them, the working mode of the ultra-temperature plasma heating device may include a unidirectional cone pulling working mode. The working parameters of the ultra-stable plasma heating device may include the power of the ultra-stable plasma heating device, the stretching rate of the ultra-stable plasma heating device, and the stretching force of the ultra-stable plasma heating device. Under the preset stretching parameters, the ultra-stable plasma heating device may be used to stretch the original central structure to a preset size to obtain a truncated cone-shaped processing central structure. It can be understood that the diameter of the processing central structure is the first preset diameter and the second preset diameter.

[0069] As the working parameters of the ultra-stable plasma heating device are easy to adjust, a central structure of a preset size can be obtained quickly and efficiently. In addition, as the working parameters of the ultra-stable plasma heating device are adjusted with high precision, the size of the central structure can be controlled with high precision.

[0070] The above-mentioned method of obtaining a central structure of a preset size by using ultra-stable plasma heating technology does not require the use of a mold. Therefore, it solves the problem of selecting and controlling the size and surface roughness of the central structure caused by the fixed mold model and the easy wear of the inner wall surface of the mold in the prior art, and realizes flexible and efficient preparation of a central structure with a preset target size and a surface roughness at the nanometer level.

[0071] Optionally, based on the above technical solution, the power of the ultra-stable plasma heating device can be 450-800W, the stretching rate of the ultra-stable plasma heating device can be 40-110μm / s, and the target tension can be 1-50N.

[0072] Optionally, based on the above technical solution, the stretching distance of the ultra-stable plasma heating device can be 3 cm.

[0073] Optionally, based on the above technical solution, the working mode of the ultra-stable plasma heating equipment can be a unidirectional cone pulling mode.

[0074] In an embodiment of the present invention, the working mode of the ultra-stable plasma heating device can be set to a one-way taper mode. Accordingly, the ultra-stable plasma heating device can stretch the original central structure in the one-way taper mode to obtain a truncated cone-shaped processing central structure. It can be understood that the size and shape of the cone in the one-way taper mode can be set.

[0075] Optionally, based on the above technical solution, the diameter of the target optical fiber may be 80-400 μm. The first preset diameter and the second preset diameter may be 25-200 μm.

[0076] Optionally, based on the above technical solution, the taper of the target center structure may be 0.2°-1.8°.

[0077] Optionally, based on the above technical solution, the diameter of the target optical fiber may be 200 μm.

[0078] Optionally, based on the above technical solution, the target pulling force may be 10N.

[0079] Optionally, based on the above technical solution, the cutting device may include an ultrasonic cutting knife.

[0080] In the embodiment of the present invention, an ultrasonic cutting knife may be used to cut the processing center structure to obtain the target center structure.

[0081] Figure 4 A flowchart of another method for preparing the central structure of an X-ray zone plate provided in an embodiment of the present invention. This embodiment is applicable to the case of flexibly and efficiently preparing a central structure with a preset diameter and a surface roughness at the nanometer level. The method can be performed by a central structure preparation device for an X-ray zone plate. Figure 4 As shown, the specific steps include:

[0082] Step 210: Clean the original optical fiber to obtain the target optical fiber.

[0083] Step 220: Use an optical fiber coating stripping platform to remove the coating located in a preset area on the target optical fiber to obtain an original central structure, which includes an original fiber core and an original cladding.

[0084] Step 230: Fix one end of the original central structure on a base, and apply a target tensile force to the base to eliminate the bending caused by the gravity of the original central structure.

[0085] Step 240: Under preset stretching parameters, use an ultra-stable plasma heating device to stretch the original central structure from the other end of the original central structure to a preset size to obtain a truncated cone-shaped processing central structure.

[0086] In an embodiment of the present invention, the preset size may include a first preset diameter, a second preset diameter, and a preset length. The first preset diameter is smaller than the second preset diameter. The preset stretching parameters include a working mode of the ultra-stable plasma heating device and a working parameter of the ultra-stable plasma heating device, and the working parameter of the ultra-stable plasma heating device includes a power of the ultra-stable plasma heating device, a stretching rate of the ultra-stable plasma heating device, and a stretching force of the ultra-stable plasma heating device.

[0087] Step 250: Use an ultrasonic cutting knife to cut the target position of the processing center structure to obtain a target center structure with a preset size.

[0088] In an embodiment of the present invention, Figure 5 As shown, a schematic diagram of a method for preparing the central structure of an X-ray zone plate is given. Figure 5 In the process, the target central structure 20 can be obtained by performing the operations of removing the coating, heating and stretching, and ultrasonic cutting on the target optical fiber. Figure 5 The target optical fiber includes an original core structure 10 and a coating layer 11 .

[0089] The working mode of the ultra-stable plasma heating device in the technical solution provided in the embodiment of the present invention can be a unidirectional taper mode. The power of the ultra-stable plasma heating device can be 550W, and the stretching rate of the ultra-stable plasma heating device can be 80μm / s. The diameter of the target optical fiber can be 200μm. The target tension can be 10N. Based on the above, if Figure 6-Figure 11 As shown in Figure 1, optical microscope images of various target central structures are given. Figure 6 The first preset diameter is 83.79 μm, the second preset diameter is 90.41 μm, the preset length is 877.62 μm, and the taper is 0.2°. Figure 7 The first preset diameter is 68.36 μm, the second preset diameter is 83.79 μm, the preset length is 855.57 μm, and the taper is 0.5°. Figure 8The first preset diameter is 86.00 μm, the second preset diameter is 110.25 μm, the preset length is 943.77 μm, and the taper is 0.7°. Fig. 9 The first preset diameter is 112.46 μm, the second preset diameter is 149.94 μm, the preset length is 968.03 μm, and the taper is 1.0°. Fig.10 The first preset diameter is 138.92 μm, the second preset diameter is 183.02 μm, the preset length is 910.69 μm, and the taper is 1.4°. Fig.11 The first preset diameter is 123.48 μm, the second preset diameter is 189.64 μm, the preset length is 1012.13 μm, and the taper is 1.8°. It can be seen that the overall shape of each target center structure prepared by the method of the embodiment of the present invention is smooth and symmetrical, truncated cone-shaped, with uniform diameter, and the taper meets the requirements, and the surface roughness is low.

[0090] The technical solution of this embodiment adopts ultra-stable plasma heating technology to obtain a central structure of a preset size. Since there is no need to use a mold, it solves the problem of selecting and controlling the size and surface roughness of the central structure caused by the fixed mold model and the easy wear of the inner wall surface of the mold in the prior art, and realizes flexible and efficient preparation of a central structure with a preset size and a surface roughness at the nanometer level.

[0091] Fig.12 The flowchart of a method for preparing an X-ray zone plate provided in an embodiment of the present invention is applicable to the case of preparing an X-ray zone plate flexibly, efficiently and at a low cost. The method can be performed by an X-ray zone plate preparation device. Fig.12 As shown, the specific steps include:

[0092] Step 310: Prepare the target central structure.

[0093] In the embodiment of the present invention, the target central structure is the target central structure described in the embodiment of the present invention, that is, the target central structure described here can be the target central structure prepared by the method for preparing the central structure of the X-ray zone plate provided in the embodiment of the present invention.

[0094] Step 320: Using atomic layer deposition technology, alternately deposit thin film ring-zone structures on the surface of the target central structure to obtain an original zone plate.

[0095] In an embodiment of the present invention, the atomic layer deposition technology, or atomic layer epitaxy (ALE) technology, refers to a method of forming a thin film by alternately passing a gas phase precursor into a reaction chamber and causing a gas-solid phase chemical adsorption reaction on the surface of a deposition substrate. Specifically, the target central structure can be suspended and fixed in the chamber of the atomic layer deposition. After performing the deposition operation, the thin film ring-band structure can be alternately deposited on the surface of the target central structure to obtain the original wave zone plate. The deposition operation can include vacuuming, heating and nitrogen. It can be understood that since the thin film ring-band structure can be alternately deposited on the surface of the target central structure, the number of layers of the thin film ring-band structure can be at least one layer. The number of layers of the thin film ring-band structure can be set according to actual conditions and is not specifically limited here. Although the number of layers of the thin film ring-band structure may be more than two layers, the material of the thin film ring-band structure may be two kinds. That is, the thin film ring-band structure of the two materials is alternately deposited on the surface of the target central structure. The following requirements are made for the two materials: the refractive index of the two materials is greatly different, and the adjacent ring bands can produce a phase difference of π after the X-ray is absorbed. Based on the above, the material of the thin film ring band structure may include oxides, nitrides and metal elements. Oxides may include aluminum oxide, hafnium oxide, tantalum oxide and silicon oxide, etc. Nitrides may include aluminum nitride, silicon nitride and gallium nitride, etc. Metal elements may include iridium, platinum, copper and palladium, etc. Optionally, in the embodiment of the present invention, the oxide may include aluminum oxide and hafnium oxide. That is, a thin film ring band structure whose material is aluminum oxide and a thin film ring band structure whose material is chromium oxide are alternately deposited on the surface of the target center structure.

[0096] Step 330 : depositing a protective layer on the surface of the original zone plate, and cutting the original zone plate using focused ion beam micro-nano processing technology to obtain a target zone plate.

[0097] In an embodiment of the present invention, after obtaining the original wave zone plate, a protective layer can be deposited on the surface of the original wave zone plate by methods such as electroplating, electron beam evaporation or magnetron sputtering, and it can be cut and polished into slices of a certain thickness by focused ion beam micro-nano processing technology to obtain the target wave zone plate.

[0098] The technical solution of this embodiment adopts ultra-stable plasma heating technology to prepare the target central structure, adopts atomic layer deposition technology to alternately deposit thin film ring-shaped band structures on the surface of the target central structure to obtain the original wave zone plate, deposits a protective layer on the surface of the original wave zone plate, and adopts focused ion beam micro-nano processing technology to cut the original wave zone plate to obtain the target wave zone plate, thereby realizing the rapid and efficient preparation of X-ray wave zone plates with a large aspect ratio.

[0099] Optionally, based on the above technical solution, an atomic layer deposition technique is used to alternately deposit thin film ring-band structures on the surface of the target central structure to obtain an original wave zone plate. Specifically, the target central structure is suspended and fixed in an atomic layer deposition chamber, and after performing a deposition operation, a thin film ring-band structure is alternately deposited on the surface of the target central structure to obtain an original wave zone plate. The deposition operation includes vacuuming, heating and nitrogen flow.

[0100] Optionally, on the basis of the above technical solution, a protective layer is deposited on the surface of the original zone plate, and the original zone plate is cut by using focused ion beam micro-nano processing technology to obtain a target zone plate, which may specifically include: depositing a protective layer on the surface of the original zone plate to obtain a processed zone plate. The processed zone plate is fixed to a focused ion beam system and the focus is adjusted. Under preset processing parameters, a large beam cutting and a small beam surface polishing method are used to process the processed zone plate to a preset thickness to obtain a target zone plate, and the preset processing parameters include acceleration voltage and ion beam current.

[0101] In an embodiment of the present invention, a protective layer may be deposited on the surface of the original zone plate by electroplating, electron beam evaporation or magnetron sputtering to obtain a processed zone plate. The processed zone plate may be fixed to a focused ion system and the focus may be adjusted. The processed zone plate may be processed to a preset thickness according to pre-set processing parameters and by using a large beam cutting and a small beam surface polishing method to obtain a target zone plate. The processing parameters may include an acceleration voltage and an ion beam current.

[0102] Optionally, based on the above technical solution, the material of the thin film ring-band structure may include oxide, nitride and metal element.

[0103] Optionally, based on the above technical solution, the oxide may include any two of aluminum oxide, hafnium oxide, tantalum oxide and silicon oxide. The nitride may include any two of aluminum nitride, silicon nitride and gallium nitride. The metal element may include any two of iridium, platinum, copper and palladium.

[0104] Optionally, based on the above technical solution, the oxide may include aluminum oxide and hafnium oxide.

[0105] Fig.13 A flowchart of another method for preparing an X-ray zone plate provided in an embodiment of the present invention is provided. This embodiment is applicable to the case of preparing an X-ray zone plate flexibly, efficiently and at a low cost. The method can be performed by an X-ray zone plate preparation device. Fig.13 As shown, the specific steps include:

[0106] Step 410: Prepare a target central structure.

[0107] In an embodiment of the present invention, the target center structure is the target center structure described in an embodiment of the present invention.

[0108] Step 420, suspend and fix the target central structure in the atomic layer deposition chamber, and after performing the deposition operation, alternately deposit thin film ring-shaped band structures on the surface of the target central structure to obtain an original wave zone plate, and the deposition operation includes vacuuming, heating and nitrogen flow.

[0109] Step 430: deposit a protective layer on the surface of the original zone plate to obtain a processed zone plate.

[0110] Step 440: Fix the processing zone plate to the focused ion beam system and adjust the focus.

[0111] Step 450: Under preset processing parameters, a large beam cutting and a small beam surface polishing method are used to process the zone plate to a preset thickness to obtain a target zone plate. The processing parameters include an acceleration voltage and an ion beam current.

[0112] In an embodiment of the present invention, the material of the thin film ring band structure may include aluminum oxide and hafnium oxide. Fig.14 As shown, a schematic diagram of a method for preparing an X-ray zone plate is given. Fig.14 In the process, the material of the thin film annular band structure 30 of the processed zone plate 3 can be aluminum oxide, and the material of the thin film annular band structure 31 can be chromium oxide. By processing the processed zone plate 3, the target zone plate 4 is obtained. Fig.14 The target center structure 20 is Figure 5 The target center structure in 20.

[0113] The technical solution of this embodiment adopts ultra-stable plasma heating technology to prepare the target central structure, adopts atomic layer deposition technology to alternately deposit thin film ring-shaped band structures on the surface of the target central structure to obtain the original wave zone plate, deposits a protective layer on the surface of the original wave zone plate, and adopts focused ion beam micro-nano processing technology to cut the original wave zone plate to obtain the target wave zone plate, thereby realizing the rapid and efficient preparation of X-ray wave zone plates with a large aspect ratio.

[0114] The embodiment of the present invention provides an X-ray zone plate, which includes the target central structure described in the embodiment of the present invention, and the target central structure is the target central structure prepared by the method for preparing the central structure of the X-ray zone plate provided by the embodiment of the present invention.

[0115] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for preparing a central structure of an X-ray zone plate, characterized in that: include: Removing the coating of the target optical fiber to obtain an original central structure, including: using an optical fiber coating stripping platform to remove the coating located in a preset area on the target optical fiber to obtain an original central structure, wherein the original central structure includes an original fiber core and an original cladding; The original central structure is stretched to a preset size to obtain a truncated cone-shaped processing central structure, comprising: fixing one end of the original central structure on a base, applying a target tensile force to the base, and under preset stretching parameters, using an ultra-stable plasma heating device to stretch the original central structure from the other end of the original central structure to a preset size to obtain a truncated cone-shaped processing central structure, wherein the preset stretching parameters include a working mode of the ultra-stable plasma heating device and working parameters of the ultra-stable plasma heating device, and the working parameters of the ultra-stable plasma heating device include the power of the ultra-stable plasma heating device, the stretching rate of the ultra-stable plasma heating device, and the stretching force of the ultra-stable plasma heating device; wherein the power of the ultra-stable plasma heating device is 450-800W, and the stretching rate of the ultra-stable plasma heating device is 40-110μm / s; the target tensile force is 1-50N; the preset size includes a first preset diameter, a second preset diameter, and a preset length, and the first preset diameter is smaller than the second preset diameter; The processed central structure is cut to obtain a target central structure having the preset size.

2. The method for preparing the central structure of an X-ray zone plate according to claim 1, characterized in that: Before removing the coating layer of the target optical fiber to obtain the original central structure, the method further includes: The original optical fiber is cleaned to obtain the target optical fiber.

3. The method for preparing the central structure of an X-ray zone plate according to claim 1, characterized in that: The working mode of the ultra-stable plasma heating device is a unidirectional cone pulling mode.

4. The method for preparing the central structure of an X-ray zone plate according to claim 1 or 2, characterized in that: The diameter of the target optical fiber is 80-400 μm, and the first preset diameter and the second preset diameter are 25-200 μm.

5. A method for preparing an X-ray zone plate, characterized in that: include: Preparing a target central structure, wherein the target central structure is a central structure prepared by the method according to any one of claims 1 to 4; Using atomic layer deposition technology to alternately deposit thin film ring-zone structures on the surface of the target central structure to obtain an original zone plate; A protective layer is deposited on the surface of the original zone plate, and the original zone plate is cut using focused ion beam micro-nano processing technology to obtain a target zone plate.

6. The method for preparing an X-ray zone plate according to claim 5, characterized in that: The method of alternately depositing thin film ring-zone structures on the surface of the target central structure using atomic layer deposition technology to obtain an original zone plate includes: The target central structure is suspended and fixed in an atomic layer deposition chamber. After performing a deposition operation, thin film ring-shaped band structures are alternately deposited on the surface of the target central structure to obtain an original wave zone plate. The deposition operation includes vacuuming, heating and nitrogen flow.

7. The method for preparing an X-ray zone plate according to claim 5, characterized in that: The method of depositing a protective layer on the surface of the original zone plate and cutting the original zone plate using a focused ion beam micro-nano processing technology to obtain a target zone plate comprises: Depositing a protective layer on the surface of the original zone plate to obtain a processed zone plate; Fixing the processing zone plate to a focused ion beam system and adjusting the focus; Under preset processing parameters, the treated zone plate is processed to a preset thickness by using a large beam cutting and a small beam surface polishing method to obtain a target zone plate, wherein the preset processing parameters include an acceleration voltage and an ion beam current.

8. The method for preparing an X-ray zone plate according to any one of claims 5 to 7, characterized in that: The material of the thin film ring band structure includes oxide, nitride and metal element.

9. The method for preparing an X-ray zone plate according to claim 8, characterized in that: The oxide includes any two of aluminum oxide, hafnium oxide, tantalum oxide and silicon oxide; the nitride includes any two of aluminum nitride, silicon nitride and gallium nitride; the metal element includes any two of iridium, platinum, copper and palladium.

10. An X-ray zone plate, characterized in that: It comprises a target central structure, wherein the target central structure is a target central structure prepared by the method according to any one of claims 1 to 4.

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