Semiconductor light emitting device

Abstract

The present application provides a semiconductor light emitting device (1) comprising: a substrate (10); a common conductive portion (30) formed on the substrate (10); a semiconductor light emitting element (80) and an electronic component (100) mounted on the common conductive portion (30). The semiconductor light emitting element (80) and the electronic component (100) are electrically connected via the common conductive portion (30). According to the structure, the conductive path of the semiconductor light emitting element (80) and the electronic component (100) can be shortened. Therefore, the parasitic capacitance based on the conductive path of the semiconductor light emitting element (80) and the electronic component (100) can be reduced. Thus, the parasitic capacitance can be reduced, and the semiconductor light emitting element (80) and the electronic component (100) are electrically connected.

Description

Technical Field

[0001] This invention relates to semiconductor light-emitting devices. Background Technology

[0002] For example, as shown in Patent Document 1, semiconductor light-emitting devices having semiconductor light-emitting elements as light sources are well known. The semiconductor light-emitting device described in Patent Document 1 includes a semiconductor light-emitting element and a substrate on which the semiconductor light-emitting element is mounted.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-41866. Summary of the Invention

[0006] The problem the invention aims to solve

[0007] However, when using a semiconductor light-emitting device with electronic components such as switching elements or capacitors that drive the semiconductor light-emitting element, the electronic components are often configured separately from the semiconductor light-emitting device, and the semiconductor light-emitting element is electrically connected to the electronic components using wiring or the like. In such a structure, there is a concern about parasitic capacitance caused by wiring, etc.

[0008] The purpose of this invention is to provide a semiconductor light-emitting device that can electrically connect semiconductor light-emitting elements and electronic components with reduced parasitic capacitance.

[0009] Technical means for solving problems

[0010] The semiconductor light-emitting device for solving the above problems includes: a substrate; a common conductive portion formed on the substrate; a semiconductor light-emitting element mounted on the common conductive portion; and an electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion.

[0011] Based on this structure, the conductive path between the semiconductor light-emitting element and the electronic component can be shortened. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element and the electronic component can be reduced. Thus, the semiconductor light-emitting element and the electronic component can be electrically connected with reduced parasitic capacitance.

[0012] Invention Effects

[0013] Based on the above-mentioned semiconductor light-emitting device, the semiconductor light-emitting element and electronic components can be appropriately configured with reduced parasitic capacitance. Attached Figure Description

[0014] Figure 1 This is a perspective view showing one embodiment of a semiconductor light-emitting device.

[0015] Figure 2 This is an exploded perspective view of a semiconductor light-emitting device.

[0016] Figure 3 This is a front view of a semiconductor light-emitting device.

[0017] Figure 4 This is a bottom view of a semiconductor light-emitting device.

[0018] Figure 5 yes Figure 3 5-5 line cross-section diagram.

[0019] Figure 6 yes Figure 3 6-6 line cross-section diagram.

[0020] Figure 7 It is a three-dimensional diagram showing the cross-sectional structure of a semiconductor light-emitting element.

[0021] Figure 8 This is a partial cross-sectional view of a semiconductor light-emitting element.

[0022] Figure 9 It is a front view showing a part of an electronic device.

[0023] Figure 10 It is a circuit diagram that represents a part of an electronic device.

[0024] Figure 11 This is a perspective view of the semiconductor light-emitting device according to the second embodiment.

[0025] Figure 12 This is a front view of a semiconductor light-emitting device.

[0026] Figure 13 This is a side view of a semiconductor light-emitting device.

[0027] Figure 14 It is a front view obtained by cutting the frame of the semiconductor light-emitting device with a plane orthogonal to the thickness direction of the substrate.

[0028] Figure 15 This is a front view of the semiconductor light-emitting device after the casing has been removed.

[0029] Figure 16 This is a perspective view of the bottom side of the semiconductor light-emitting device.

[0030] Figure 17 yes Figure 12 The 17-17 line cross-section diagram.

[0031] Figure 18 yes Figure 12 18-18 line cross-section diagram.

[0032] Figure 19 yes Figure 12 The 19-19 line cross-section diagram.

[0033] Figure 20 yes Figure 15 20-20 line cross-section diagram.

[0034] Figure 21 yes Figure 15 The 21-21 line cross-section diagram.

[0035] Figure 22 yes Figure 15 The 22-22 line cross-section diagram.

[0036] Figure 23 This is a front view of the casing.

[0037] Figure 24 yes Figure 23 24-24 line cross-section diagram.

[0038] Figure 25 yes Figure 23 25-25 line cross-section diagram.

[0039] Figure 26 This is a bottom view of the shell.

[0040] Figure 27 This is an explanatory diagram illustrating an example of a step in the manufacturing method of the semiconductor light-emitting device according to the second embodiment.

[0041] Figure 28 yes Figure 27 A magnified portion of the image.

[0042] Figure 29 yes Figure 28 The cross-sectional view of line 29-29.

[0043] Figure 30 This is an explanatory diagram illustrating one step in a method for manufacturing a semiconductor light-emitting device.

[0044] Figure 31 yes Figure 30 The cross-sectional view of line 31-31.

[0045] Figure 32 This is an explanatory diagram illustrating one step in a method for manufacturing a semiconductor light-emitting device.

[0046] Figure 33 This is an explanatory diagram illustrating one step in a method for manufacturing a semiconductor light-emitting device.

[0047] Figure 34 This is an explanatory diagram illustrating one step in a method for manufacturing a semiconductor light-emitting device.

[0048] Figure 35 This is an explanatory diagram illustrating one step in a method for manufacturing a semiconductor light-emitting device.

[0049] Figure 36 This is an explanatory diagram illustrating one step in a method for manufacturing a semiconductor light-emitting device.

[0050] Figure 37 This is a front view showing a portion of the electronic device according to the second embodiment.

[0051] Figure 38 This is a circuit diagram showing a part of the electronic device according to the second embodiment.

[0052] Figure 39 This is a front view of a modified semiconductor light-emitting device.

[0053] Figure 40 This is a bottom view of a modified semiconductor light-emitting device.

[0054] Figure 41 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0055] Figure 42 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0056] Figure 43 This is a front view of a modified semiconductor light-emitting device.

[0057] Figure 44 This is a bottom view of a modified semiconductor light-emitting device.

[0058] Figure 45 This is a front view of a modified semiconductor light-emitting device.

[0059] Figure 46 This is a bottom view of a modified semiconductor light-emitting device.

[0060] Figure 47 This is a front view of a modified semiconductor light-emitting device.

[0061] Figure 48 This is a front view of a modified semiconductor light-emitting device.

[0062] Figure 49 This is a front view of a modified semiconductor light-emitting device.

[0063] Figure 50 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0064] Figure 51 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0065] Figure 52 This is a perspective view of a modified semiconductor light-emitting device.

[0066] Figure 53 This is a front view of a modified semiconductor light-emitting device.

[0067] Figure 54 This is a side view of a modified semiconductor light-emitting device.

[0068] Figure 55 yes Figure 53 The 55-55 line cross-section diagram.

[0069] Figure 56 yes Figure 52 A front view of the housing of a semiconductor light-emitting device.

[0070] Figure 57 yes Figure 56 A bottom view of the shell.

[0071] Figure 58 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0072] Figure 59 This is a front view of a modified semiconductor light-emitting device, obtained by cutting the frame with a plane orthogonal to the thickness direction of the substrate.

[0073] Figure 60 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0074] Figure 61 This is a front view obtained by cutting the frame of the modified semiconductor light-emitting device with a plane orthogonal to the thickness direction of the substrate.

[0075] Figure 62 The front view is obtained by cutting the frame of the modified semiconductor light-emitting device into a plane orthogonal to the thickness direction of the substrate.

[0076] Figure 63 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0077] Figure 64 This is a partial enlarged view of the front view obtained by cutting the frame of the modified semiconductor light-emitting device with a plane orthogonal to the thickness direction of the substrate.

[0078] Figure 65 This is a bottom view of a portion of the frame of the housing.

[0079] Figure 66 yes Figure 64 The cross-sectional view of line 66-66.

[0080] Figure 67 yesFigure 66 Cross-sectional views of the shell and substrate of the modified example.

[0081] Figure 68 yes Figure 66 Cross-sectional views of the shell and substrate of the modified example.

[0082] Figure 69 yes Figure 66 Cross-sectional views of the shell and substrate of the modified example.

[0083] Figure 70 of Figure 65 The bottom view of a portion of the frame of the modified example.

[0084] Figure 71 yes Figure 65 The bottom view of a portion of the frame of the modified example.

[0085] Figure 72 yes Figure 65 The bottom view of a portion of the frame of the modified example.

[0086] Figure 73 yes Figure 65 The bottom view of a portion of the frame of the modified example.

[0087] Figure 74 yes Figure 66 Cross-sectional views of the shell and substrate of the modified example.

[0088] Figure 75 yes Figure 66 Cross-sectional views of the shell and substrate of the modified example.

[0089] Figure 76 yes Figure 66 Cross-sectional views of the shell and substrate of the modified example.

[0090] Figure 77 From Figure 76 A cross-sectional view of the shell and substrate in the form of the venting section.

[0091] Figure 78 This is a front view of the casing of the modified example.

[0092] Figure 79 yes Figure 78 The 79-79 line cross-section diagram.

[0093] Figure 80 yes Figure 78 A bottom view of the shell.

[0094] Figure 81 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0095] Figure 82 This is a cross-sectional view of a modified semiconductor light-emitting device.

[0096] Figure 83 This is a front view of a modified semiconductor light-emitting device, showing the device with the housing removed.

[0097] Figure 84 This is a front view of a modified semiconductor light-emitting device, showing the device with the housing removed.

[0098] Figure 85 This is a front view of a modified semiconductor light-emitting device, showing the device with the housing removed. Detailed Implementation

[0099] [First Implementation Method]

[0100] The following description describes embodiments of semiconductor light-emitting devices with reference to the accompanying drawings. The embodiments shown below are illustrative examples illustrating structures or methods for embodying the technical concept; the materials, shapes, structures, arrangements, and dimensions of the constituent components are not limited to those described below. Various modifications can be made to the following embodiments.

[0101] Figure 1 This is a perspective view of the semiconductor light-emitting device 1 according to the first embodiment. Figure 2 This is an exploded perspective view of the semiconductor light-emitting device 1 according to the first embodiment. Figure 3 This is a front view of the semiconductor light-emitting device 1 according to the first embodiment. Figure 3 The solid line in the middle indicates the area below cover 22.

[0102] like Figure 1 As shown, the semiconductor light-emitting device 1 is, for example, a cuboid shape. In the top view of the semiconductor light-emitting device 1, the direction along one side is designated as the X direction, and the direction orthogonal to the X direction is designated as the Y direction. In this embodiment, the dimension of the semiconductor light-emitting device 1 in the X direction is approximately 3.5 mm, and the dimension of the semiconductor light-emitting device 1 in the Y direction is approximately 3.5 mm. Furthermore, the dimensions of the semiconductor light-emitting device 1 in the X direction and the Y direction can be arbitrarily changed.

[0103] like Figures 1-3 As shown, the semiconductor light-emitting device 1 includes: a substrate 10; a housing 20; a plurality of conductive parts 30, 40, 50, 60, and 70; a semiconductor light-emitting element 80; and an electronic component 100.

[0104] The substrate 10 is, for example, a square extending in the X and Y directions. The X and Y directions are two mutually orthogonal directions in the planar direction of the substrate 10. The substrate 10 has a front side 11 and a back side 12.

[0105] In this embodiment, the substrate 10 is formed of an insulating material. The substrate 10 may be, for example, a ceramic such as alumina or aluminum nitride, a silicon substrate, or epoxy glass. Furthermore, for ease of explanation, the direction away from the front surface 11 in the thickness direction of the substrate 10 is referred to as "upper", and the direction closer to the front surface 11 of the substrate is referred to as "lower".

[0106] The housing 20 is a component that houses the semiconductor light-emitting element 80 and the electronic components 100. The housing 20 is mounted on the substrate 10. The interior of the housing 20 is, for example, hollow. However, it is not limited to this, and the interior of the housing 20 may also be filled with certain materials.

[0107] The housing 20 has a frame 21 with an opening at the top and a cover 22 that closes the opening of the frame 21. The frame 21 is formed, for example, of a light-shielding material, such as a colored resin. Light from the semiconductor light-emitting element 80 is blocked by the frame 21. The frame 21 is formed in a square shape slightly smaller than the substrate 10. Figure 2 As shown, the frame 21 has: a first side wall portion 21a and a second side wall portion 21b as two side walls in the Y direction; and a third side wall portion 21c and a fourth side wall portion 21d as two side walls in the X direction. The first side wall portion 21a and the second side wall portion 21b are arranged opposite to each other in the Y direction, and the third side wall portion 21c and the fourth side wall portion 21d are arranged opposite to each other in the X direction.

[0108] The cover 22 is a plate-shaped part that is slightly smaller than the outer edge of the frame 21. The cover 22 is made of a transparent material, such as glass. The cover 22 allows light from the semiconductor light-emitting element 80 to pass through.

[0109] like Figure 2 and Figure 3 As shown, multiple conductive portions 30, 40, 50, 60, and 70 are formed on the substrate 10. These conductive portions 30, 40, 50, 60, and 70 are formed of a conductive material, such as Cu, Ni, Ti, Au, etc., which can be appropriately selected. Alternatively, a front-side layer formed of Sn can also be provided on the multiple conductive portions 30, 40, 50, 60, and 70.

[0110] The plurality of conductive portions 30, 40, 50, 60, and 70 include, for example, a front conductive layer formed on the front side 11 of the substrate; a back conductive layer formed on the back side 12 of the substrate; and a connecting portion that electrically connects the front conductive layer and the back conductive layer.

[0111] like Figures 3-5As shown, the common conductive portion 30 among the plurality of conductive portions 30, 40, 50, 60, and 70 includes: a common front conductive layer 31 formed on the front side 11 of the substrate; a common back conductive layer 32 formed on the back side 12 of the substrate; and a common connection portion 33 electrically connecting the common front conductive layer 31 and the common back conductive layer 32. The common conductive portion 30 has a common contact front side 30a located on the front side 11 of the substrate and a common contact back side 30b located on the back side 12 of the substrate. In this embodiment, the common contact front side 30a is the front side of the common front conductive layer 31, and the common contact back side 30b is the back side of the common back conductive layer 32.

[0112] The common contact front surface 30a is disposed on the front surface 11 of the substrate closer to the center portion in the X direction than the third sidewall portion 21c and the fourth sidewall portion 21d. In this embodiment, it is disposed on the center portion in the X direction of the front surface 11 of the substrate. The common contact front surface 30a extends in the Y direction. The common contact front surface 30a is a rectangle with the Y direction as its long side and the X direction as its short side. The common contact front surface 30a is formed to the position overlapping with the frame 21, and the two ends of the common contact front surface 30a in the Y direction are aligned with the outer surfaces of the first sidewall portion 21a and the second sidewall portion 21b when viewed from above.

[0113] The connecting conductive part 40 and the control conductive part 70 are arranged on one side of the common contact front surface 30a in the X direction, and the element conductive part 50 and the driving conductive part 60 are arranged on the other side of the common contact front surface 30a in the X direction.

[0114] The conductive connection portion 40 includes: a conductive front layer 41 formed on the front side 11 of the substrate; a conductive back layer 42 formed on the back side 12 of the substrate; and a connecting portion 43 that electrically connects the conductive front layer 41 and the conductive back layer 42.

[0115] The connecting front conductive layer 41 is a portion that protrudes in the X direction from one of the two ends of the common front conductive layer 31 on the side opposite to the element conductive portion 50. The connecting front conductive layer 41 and the common front conductive layer 31 are integrally formed. Therefore, the connecting conductive portion 40 and the common conductive portion 30 are electrically connected.

[0116] The conductive connection portion 40 has a front contact 40a located on the front side 11 of the substrate and a back contact 40b located on the back side 12 of the substrate. In this embodiment, the front contact 40a is the front side of the front conductive layer 41, and is a portion that protrudes in the X direction from the end opposite to the component conductive portion 50 side of one of the two ends of the common contact front 30a in the X direction. The front contact 40a is continuous with the common contact front 30a. The back contact 40b is the back side of the back conductive layer 42.

[0117] The conductive portion 50 includes: a front conductive layer 51 formed on the front side 11 of the substrate; a back conductive layer 52 formed on the back side 12 of the substrate; and a component connection portion 53 electrically connecting the front conductive layer 51 and the back conductive layer 52. The conductive portion 50 has a component contact front side 50a located on the front side 11 of the substrate; and a component contact back side 50b located on the back side 12 of the substrate. In this embodiment, the component contact front side 50a is the front side of the front conductive layer 51, and the component contact back side 50b is the back side of the back conductive layer 52.

[0118] like Figure 3 , Figure 4 , Figure 6 As shown, the driving conductive portion 60 includes: a driving front conductive layer 61 formed on the front side 11 of the substrate; a driving back conductive layer 62 formed on the back side 12 of the substrate; and a driving connection portion 63 for electrically driving the driving front conductive layer 61 and the driving back conductive layer 62. The driving conductive portion 60 has a driving contact front surface 60a located on the front side 11 of the substrate and a driving contact back surface 60b located on the back side 12 of the substrate. In this embodiment, the driving contact front surface 60a is the front surface of the driving front conductive layer 61, and the driving contact back surface 60b is the back surface of the driving back conductive layer 62.

[0119] The control conductive portion 70 includes: a control front conductive layer 71 formed on the front side 11 of the substrate; a control back conductive layer 72 formed on the back side 12 of the substrate; and a control connection portion 73 for electrically controlling the control front conductive layer 71 and the control back conductive layer 72. The control conductive portion 70 has a control contact front surface 70a located on the front side 11 of the substrate and a control contact back surface 70b located on the back side 12 of the substrate. In this embodiment, the control contact front surface 70a is the front surface of the control front conductive layer 71, and the control contact back surface 70b is the back surface of the control back conductive layer 72.

[0120] The semiconductor light-emitting element 80 is the light source in the semiconductor light-emitting device 1, emitting light in a specified wavelength range. The specific structure of the semiconductor light-emitting element 80 is not particularly limited; it can be a semiconductor laser element or an LED element, etc. In this embodiment, the semiconductor light-emitting element 80 is a semiconductor laser element, and in particular, a VCSEL element is used. Light from the semiconductor light-emitting element 80 is emitted to the outside through the cover 22.

[0121] like Figure 7 and Figure 8 As shown, the semiconductor light-emitting element 80 in this example includes: an element substrate 81, a first semiconductor layer 82, an active layer 83, a second semiconductor layer 84, a current-restricting layer 85, an insulating layer 86, and a conductive layer 87, forming a plurality of light-emitting regions 90. Figure 8 The portion including a single luminous area of ​​90 is shown in magnified view.

[0122] The component substrate 81 is formed of a semiconductor. The semiconductor constituting the component substrate 81 is, for example, GaAs. The semiconductor constituting the component substrate 81 may also be a material other than GaAs.

[0123] The active layer 83 is made of a compound semiconductor that emits light with a wavelength in the 980 nm band (hereinafter referred to as "λa") through natural release and induced release, for example. The active layer 83 is located between the first semiconductor layer 82 and the second semiconductor layer 84. In this embodiment, a multiple quantum well structure is formed by alternating layers of undoped GaAs well layers and undoped AlGaAs barrier layers (blocking layers). For example, undoped Al... 0.35 Ga 0.65 The As barrier layer and the undoped GaAs well layer are alternately formed for 2 to 6 cycles.

[0124] The first semiconductor layer 82 is typically a DBR (Distributed Bragg Reflector) layer, formed on the device substrate 81. The first semiconductor layer 82 is formed of a semiconductor having a first conductivity type. In this example, the first conductivity type is n-type. The first semiconductor layer 82 is configured as a DBR for efficiently reflecting light emitted from the active layer 83. More specifically, the active layer 83 is formed by overlapping multiple layers of AlGaAs layers with a thickness of λa / 4 and each having a different reflectivity. More specifically, the first semiconductor layer 82 is formed by, for example, having... The thickness of the n-type Al with a relatively low Al composition 0.16 Ga 0.84 As layer (low Al composition layer), and for example having The thickness of the Al composition has a relatively high n-type Al content. 0.84 Ga 0.16 As layers (high Al composition layers) are formed by alternating and repeated stacking multiple cycles (e.g., 20 cycles). In n-type Al... 0.16 Ga 0.84 As layer and n-type Al 0.84 Ga 0.16 The As layer is respectively, for example, 2×10 17 cm -3 ~3×10 18 cm -3 and 2×10 17 cm -3 ~3×10 18 cm -3 The concentration is doped with n-type impurities (e.g., Si).

[0125] The second semiconductor layer 84 is typically a DBR layer, formed of a semiconductor having a second conductivity type. In this example, the second conductivity type is p-type. Unlike this embodiment, where the first conductivity type is p-type, the second conductivity type could also be n-type. The first semiconductor layer 82 is located between the second semiconductor layer 84 and the device substrate 81. The second semiconductor layer 84 is configured as a DBR for efficiently reflecting light emitted from the active layer 83. More specifically, the second semiconductor layer 84 is configured by overlapping multiple layers of AlGaAs layers with a thickness of λa / 4 and each having a different reflectivity. For example, the second semiconductor layer 84 is composed of Al with a relatively low p-type Al. 0.16 Ga 0.84 As layer (low Al composition layer) and p-type Al with relatively high Al composition 0.84 Ga 0.16 As layers (high Al composition layers) are formed by alternating and repeatedly stacking multiple cycles (e.g., 20 cycles).

[0126] A current-restricting layer 85 is located within the second semiconductor layer 84. The current-restricting layer 85 is formed, for example, of a layer containing a large amount of Al that is easily oxidized. The current-restricting layer 85 is formed by oxidizing this easily oxidized layer. The current-restricting layer 85 is not necessarily formed by oxidation; it can also be formed using other methods (e.g., ion implantation). An opening 85a is formed in the current-restricting layer 85. Current flows through the opening 85a.

[0127] An insulating layer 86 is formed on the second semiconductor layer 84. The insulating layer 86 is formed, for example, from SiO2. An opening 86a is formed in the insulating layer 86.

[0128] A conductive layer 87 is formed on an insulating layer 86. The conductive layer 87 is formed of a conductive material (e.g., a metal). The conductive layer 87 is connected to the second semiconductor layer 84 through an opening 86a in the insulating layer 86. The conductive layer 87 has an opening 87a.

[0129] The light-emitting region 90 is the area where light from the active layer 83 is directly emitted or emitted after reflection. In this example, the light-emitting region 90 is annular in shape when viewed from above, but its shape is not particularly limited. The light-emitting region 90 is formed by stacking the second semiconductor layer 84, the current-restricting layer 85, the insulating layer 86, and the conductive layer 87, and forming openings 85a in the current-restricting layer 85, 86a in the insulating layer 86, and 87a in the conductive layer 87. In the light-emitting region 90, light from the active layer 83 is emitted through the opening 87a in the conductive layer 87.

[0130] like Figure 3 and Figure 5As shown, the semiconductor light-emitting element 80 has an upper surface 80a with a plurality of light-emitting regions 90 and an upper surface electrode 91, and a lower surface 80b with a lower surface electrode 92. The upper surface 80a is, for example, a rectangle with the X direction as its long side and the Y direction as its short side. The upper surface electrode 91 is formed at the X-direction end of the upper surface 80a. The upper surface electrode 91 is positioned closer to the fourth sidewall 21d than the third sidewall 21c. The upper surface electrode 91 has an elongated shape with the Y direction as its long side. The upper surface electrode 91 is, for example, formed of metal and is conductive to the second semiconductor layer 84. The lower surface electrode 92 is, for example, formed entirely on the lower surface 80b and is, for example, formed of metal. In this embodiment where the semiconductor light-emitting element 80 is a VCSEL element, the upper surface electrode 91 is an anode electrode, and the lower surface electrode 92 is a cathode electrode.

[0131] Electronic component 100 is used, for example, to drive semiconductor light-emitting element 80. Electronic component 100 is, for example, a switching element, which in this embodiment is an n-type MOSFET.

[0132] like Figure 3 and Figure 6 As shown, the electronic component 100 has an upper surface 100a on which a first driving electrode 101 and a control electrode 102 are formed, and a lower surface 100b on which a second driving electrode 103 is formed. In this embodiment where the electronic component 100 is a MOSFET, the first driving electrode 101 is the source electrode, the second driving electrode 103 is the drain electrode, and the control electrode 102 is the gate electrode.

[0133] like Figure 3 As shown, the upper surface 100a of the electronic component 100 is rectangular, and a control electrode 102 is formed on the lower left side when viewed from above. The remaining portion forms the first driving electrode 101. The area of ​​the first driving electrode 101 is larger than that of the control electrode 102. The lower surface 100b is, for example, rectangular. The second driving electrode 103 is formed integrally on the back surface of the electronic component 100, for example, by means of metal.

[0134] The following is a detailed description of the positional relationships of the multiple conductive parts 30, 40, 50, 60, 70, the semiconductor light-emitting element 80, and the electronic component 100.

[0135] First, use Figure 3 The layout of the 11 sides on the front of the substrate will be explained.

[0136] The semiconductor light-emitting element 80 and the electronic component 100 are mounted on the common conductive portion 30 and electrically connected via the common conductive portion 30. In this embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are disposed on a common contact front surface 30a formed on the front surface of the common front conductive layer 31 and electrically connected via the common front conductive layer 31.

[0137] Specifically, the common contact front surface 30a extends in the Y direction, and the semiconductor light-emitting element 80 and the electronic component 100 are arranged on the common contact front surface 30a in the Y direction. That is, in this embodiment, the common contact front surface 30a extends in the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100. The Y direction corresponds to the arrangement direction or the first direction, and the X direction corresponds to the second direction.

[0138] The semiconductor light-emitting element 80 is disposed near the first sidewall portion 21a, closer to the electronic component 100, and the electronic component 100 is disposed near the second sidewall portion 21b, closer to the semiconductor light-emitting element 80. The semiconductor light-emitting element 80 and the electronic component 100 are disposed at positions offset from the center of the substrate front surface 11 relative to the Y-direction, for example, disposed on opposite sides of the center in the Y-direction relative to the center. In the illustrated example, the semiconductor light-emitting element 80 is disposed between the center of the substrate front surface 11 in the Y-direction and the first sidewall portion 21a, which are on the common contact front surface 30a; in this example, it is disposed closer to the center of the substrate front surface 11 in the Y-direction than the first sidewall portion 21a. The electronic component 100 is disposed between the center of the substrate front surface 11 in the Y-direction and the second sidewall portion 21b; in this example, it is disposed closer to the center of the substrate front surface 11 in the Y-direction than the second sidewall portion 21b. Therefore, the semiconductor light-emitting element 80 and the electronic component 100 are arranged on both sides of the central part in the Y direction in the front side 11 of the substrate, and the distance between them in the Y direction is short.

[0139] like Figure 5 As shown, the lower surface electrode 92 formed on the lower surface 80b of the semiconductor light-emitting element 80 is soldered to the common contact front surface 30a using a conductive bonding material P1, such as a paste or solder containing a metal like Ag. Thus, the lower surface electrode 92 is bonded to the common conductive portion 30.

[0140] like Figure 6 As shown, the second driving electrode 103 formed on the lower surface 100b of the electronic component 100 is soldered to the common contact front surface 30a using a conductive bonding material P2, such as a paste or solder containing a metal like Ag. Thus, the second driving electrode 103 is bonded to the common conductive portion 30. The lower surface electrode 92 of the component and the second driving electrode 103 are electrically connected through the common conductive portion 30.

[0141] like Figure 3As shown, a component conductive portion 50 is disposed on one side of the common contact surface 30a in the X direction relative to the front surface 11 of the substrate, and a connection conductive portion 40 is disposed on the other side. In this embodiment, the connection contact surface 40a and the component contact surface 50a are disposed separately on both sides of the semiconductor light-emitting element 80 in the X direction. The connection conductive portion 40 is disposed on the third sidewall portion 21c side relative to the semiconductor light-emitting element 80, and the connection contact surface 40a is located in the upper left portion of the front surface 11 of the substrate. On the other hand, the component conductive portion 50 is disposed on the fourth sidewall portion 21d side relative to the semiconductor light-emitting element 80, and the component contact surface 50a is located in the upper right portion of the front surface 11 of the substrate. The connection contact surface 40a, the component upper surface 80a, and the component contact surface 50a are arranged in the X direction.

[0142] The connecting contact front 40a is, for example, a rectangle with the Y direction as its longer side and the X direction as its shorter side. When viewed from above, the connecting contact front 40a also overlaps with the frame 21. One end of the connecting contact front 40a along its longer side, when viewed from above, coincides with the outer surface of the first sidewall portion 21a. One end of the connecting contact front 40a along its shorter side, when viewed from above, coincides with the outer surface of the third sidewall portion 21c.

[0143] The component contact front surface 50a is, for example, a rectangle with the Y direction as its long side and the X direction as its short side. The component contact front surface 50a is also formed at a position where it overlaps with the frame 21 when viewed from above. One end of the component contact front surface 50a along its long side coincides with the outer surface of the first sidewall portion 21a when viewed from above. One end of the component contact front surface 50a along its short side coincides with the outer surface of the fourth sidewall portion 21d when viewed from above.

[0144] The component contact front surface 50a is electrically connected to the component upper surface electrode 91 via a wire W1. The wire W1 is formed of a metal such as Au, and is soldered to both the component upper surface electrode 91 and the component contact front surface 50a. The number of wires W1 is not particularly limited; in the illustrated example, multiple wires W1 (5 wires W1) are provided. Furthermore, in the illustrated example, the first solder joint of the wire W1 is located on the component upper surface electrode 91, and the second solder joint is located on the component contact front surface 50a.

[0145] In the illustrated example, the upper surface electrode 91 is formed at one of the two ends of the upper surface 80a of the component in the X direction, closer to the conductive portion 50 of the component. Therefore, the length of the wire W1 can be shortened.

[0146] The driving conductive portion 60 and the control conductive portion 70 are disposed on opposite sides of the common contact front surface 30a in the X direction. The driving contact front surface 60a and the control contact front surface 70a are disposed on opposite sides of the electronic component 100 in the Y direction. In the illustrated example, the driving conductive portion 60 is disposed on the fourth sidewall portion 21d side relative to the electronic component 100, and the driving contact front surface 60a is located on the lower right portion of the substrate front surface 11. The control conductive portion 70 is disposed on the third sidewall portion 21c side relative to the electronic component 100, and the control contact front surface 70a is located on the lower left portion of the substrate front surface 11. The control contact front surface 70a, the upper surface 100a of the electronic component 100, and the driving contact front surface 60a are arranged in the X direction.

[0147] The component conductive portion 50 and the drive conductive portion 60 are disposed on the same direction side of the two sides of the common contact front surface 30a in the X direction. In other words, the component contact front surface 50a is disposed on the drive contact front surface 60a side of the two sides of the common contact front surface 30a in the X direction.

[0148] The driving contact front surface 60a is, for example, a rectangle with the Y direction as its long side and the X direction as its short side. The driving contact front surface 60a is also formed at a position overlapping with the frame 21. One end of the driving contact front surface 60a in the long side direction is aligned with the outer surface of the second side wall portion 21b when viewed from above. One end of the driving contact front surface 60a in the short side direction is aligned with the outer surface of the fourth side wall portion 21d when viewed from above.

[0149] The drive contact front surface 60a is connected to the first drive electrode 101 via a wire W2. Thus, the drive conductive part 60 is electrically connected to the first drive electrode 101. The wire W2 is formed of a metal such as Cu, and is soldered to both the drive contact front surface 60a and the first drive electrode 101. The number of wires W2 is not particularly limited; in the illustrated example, multiple wires W2 (5 wires W2) are provided. Furthermore, in the illustrated example, the first solder joint of the wire W2 is provided on the first drive electrode 101, and the second solder joint is provided on the drive contact front surface 60a.

[0150] In the illustrated example, the number of wires W1 and W2 is the same. However, this is not a limitation; the number of wires W1 can also differ from the number of wires W2, for example, the number of wires W1 can be greater than the number of wires W2. Therefore, compared to electronic component 100, a larger current can flow through the semiconductor light-emitting element 80.

[0151] The control contact front surface 70a is, for example, a rectangle with the Y direction as its long side and the X direction as its short side. The control contact front surface 70a is also formed at a position overlapping with the frame 21. One end of the control contact front surface 70a in the long side direction is consistent with the outer surface of the second side wall portion 21b when viewed from above. One end face of the control contact front surface 70a in the short side direction is consistent with the outer surface of the third side wall portion 21c.

[0152] The control contact front surface 70a is connected to the control electrode 102 via a wire W3. Thus, the control conductive part 70 is electrically connected to the control electrode 102. The wire W3 is formed of a metal such as Cu, and is soldered to both the control contact front surface 70a and the control electrode 102. The number of wires W3 is not particularly limited; in the illustrated example, there is one. Furthermore, in the illustrated example, the first soldering portion of the wire W3 is located on the control electrode 102, and the second soldering portion is located on the control contact front surface 70a. The control electrode 102 is formed at one end of the upper surface 100a in the X direction, closer to the control contact front surface 70a. Therefore, the length of the wire W3 can be relatively short.

[0153] In the illustrated example, the common contact front 30a is larger than the other contact fronts 40a, 50a, 60a, and 70a. The component contact front 50a is larger than the drive contact front 60a and the control contact front 70a. The connection contact front 40a is larger than the drive contact front 60a and the control contact front 70a, and larger than the component contact front 50a. The drive contact front 60a and the control contact front 70a are the same size.

[0154] Next, use Figures 4-6 The layout of the 12 sides on the back of the substrate will be explained.

[0155] like Figure 4 As shown, a common contact back surface 30b (common back surface conductive layer 32) is formed in the center of the back surface 12 of the substrate. The common contact back surface 30b is formed on the opposite side to the common contact front surface 30a. Like the common contact front surface 30a, the common contact back surface 30b is rectangular in shape with the X direction as its shorter side and the Y direction as its longer side. Viewed from above, the common contact back surface 30b is smaller than the common contact front surface 30a. The length of the common contact back surface 30b in the X direction is shorter than the length of the common contact front surface 30a in the X direction. The two ends of the common contact back surface 30b in the X direction are closer to the center than the two ends of the common contact front surface 30a in the X direction.

[0156] A component contact back surface 50b and a drive contact back surface 60b are arranged on one side of the common contact back surface 30b in the X direction, and a connection contact back surface 40b and a control contact back surface 70b are arranged on the other side.

[0157] The connecting contact back side 40b (connecting back side conductive layer 42) is formed on the back side 12 of the substrate at a position opposite to the connecting contact front side 40a. For example... Figure 4 As shown, the connecting contact back surface 40b is formed in the upper right portion of the substrate back surface 12. The connecting contact back surface 40b is a rectangle with the X direction as its short side and the Y direction as its long side. The connecting contact back surface 40b is smaller than the connecting contact front surface 40a. The connecting contact back surface 40b is spaced apart from the common contact back surface 30b and the two are not connected.

[0158] like Figure 5 As shown, viewed from above (on the front side 11 of the substrate), the left end of the connecting contact back surface 40b is closer to the center of the substrate 10 than the left end of the connecting contact front surface 40a. The left ends of the connecting contact back surface 40b and the left ends of the connecting contact front surface 40a are the edges of the substrate 10 at the two ends of the connecting contact back surface 40b and the connecting contact front surface 40a in the X direction.

[0159] like Figure 4 As shown, the component contact back surface 50b (component back surface conductive layer 52) is formed on the back surface of the substrate 12 at a position opposite to the component contact front surface 50a. In the illustrated example, the component contact back surface 50b is formed in the upper left portion of the back surface of the substrate 12. The component contact back surface 50b is spaced apart from the common contact back surface 30b and the two are not connected.

[0160] The back side 50b of the component contact is rectangular in shape with the X direction as the shorter side and the Y direction as the longer side. The back side 50b of the component contact is smaller than the front side 50a of the component contact.

[0161] like Figure 5 As shown, viewed from above, the left end of the component contact back surface 50b coincides with the left end of the component contact front surface 50a, and the right end of the component contact back surface 50b is closer to the center than the right end of the component contact front surface 50a. The left ends of the component contact back surface 50b and the left ends of the component contact front surface 50a are the central ends of the substrate 10 between the two ends of the component contact back surface 50b and the component contact front surface 50a in the X direction. The right ends of the component contact back surface 50b and the right ends of the component contact front surface 50a are the edge ends of the substrate 10 between the two ends of the component contact back surface 50b and the component contact front surface 50a in the X direction.

[0162] like Figure 4 As shown, the driving contact back surface 60b (driving back surface conductive layer 62) is formed on the back surface 12 of the substrate at a position opposite to the driving contact front surface 60a. In the illustrated example, the driving contact back surface 60b is formed in the lower left portion of the back surface 12 of the substrate. The driving contact back surface 60b is a rectangle with the X direction as its short side and the Y direction as its long side.

[0163] The driving contact back surface 60b and the common contact back surface 30b are spaced apart in the X direction. The component contact back surface 50b and the driving contact back surface 60b are arranged spaced apart in the Y direction. The Y-direction length of the driving contact back surface 60b is shorter than the Y-direction length of the component contact back surface 50b. Furthermore, the distance Y2 between the component contact back surface 50b and the driving contact back surface 60b is greater than the distance Y1 between the component contact front surface 50a and the driving contact front surface 60a. Figure 3 )long.

[0164] like Figure 6 As shown, viewed from above, the left end of the driving contact back surface 60b coincides with the left end of the driving contact front surface 60a, and the right end of the driving contact back surface 60b is closer to the center than the right end of the driving contact front surface 60a. The left ends of the driving contact back surface 60b and the left ends of the driving contact front surface 60a are the central ends of the substrate 10 between the two ends of the driving contact back surface 60b and the driving contact front surface 60a in the X direction. The right ends of the driving contact back surface 60b and the right ends of the driving contact front surface 60a are the edge ends of the substrate 10 between the two ends of the driving contact back surface 60b and the driving contact front surface 60a in the X direction.

[0165] like Figure 4 As shown, the control contact back surface 70b is formed on the back surface 12 of the substrate, opposite to the control contact front surface 70a. In the illustrated example, the control contact back surface 70b is formed in the lower right portion of the back surface 12 of the substrate. The control contact back surface 70b is a rectangular shape with the X direction as its short side and the Y direction as its long side. The control contact back surface 70b is formed to be smaller than the control contact front surface 70a.

[0166] The control contact back surface 70b and the common contact back surface 30b are arranged spaced apart in the X direction. The connecting contact back surface 40b and the control contact back surface 70b are arranged spaced apart in the Y direction. The length of the control contact back surface 70b in the Y direction is shorter than the length of the connecting contact back surface 40b in the Y direction. Furthermore, the distance Y4 between the connecting contact back surface 40b and the control contact back surface 70b is greater than the distance Y3 between the connecting contact front surface 40a and the control contact front surface 70a. Figure 3 )long.

[0167] like Figure 6As shown, viewed from above, the right end of the control contact back surface 70b coincides with the right end of the control contact front surface 70a, and the left end of the control contact back surface 70b is more centrally located than the left end of the control contact front surface 70a. The right ends of the control contact back surface 70b and the right ends of the control contact front surface 70a are the central ends of the substrate 10 between the two ends of the control contact back surface 70b and the control contact front surface 70a in the X direction. The left ends of the control contact back surface 70b and the left ends of the control contact front surface 70a are the edge ends of the substrate 10 between the two ends of the control contact back surface 70b and the control contact front surface 70a in the X direction.

[0168] In this embodiment, the common contact back surface 30b is larger than the connecting contact back surface 40b, the component contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b. The component contact back surface 50b and the connecting contact back surface 40b are larger than the drive contact back surface 60b and the control contact back surface 70b. The drive contact back surface 60b and the control contact back surface 70b have the same shape.

[0169] Next, the connecting parts 33, 43, 53, 63, and 73 will be explained.

[0170] Multiple connecting portions 33, 43, 53, 63, and 73 form a conductive path in the thickness direction of the substrate 10. In this embodiment, the multiple connecting portions 33, 43, 53, 63, and 73 penetrate the substrate 10 in the thickness direction.

[0171] like Figure 3 and Figure 4 As shown, a common connection portion 33 is disposed between a common front conductive layer 31 and a common back conductive layer 32. The common connection portion 33 is connected to both the common front conductive layer 31 and the common back conductive layer 32, making them conductive.

[0172] like Figure 3 As shown, the common connection portion 33, viewed from above, is formed at a position that does not overlap with the semiconductor light-emitting element 80 and the electronic component 100. For example, the common connection portion 33 is disposed between the semiconductor light-emitting element 80 and the electronic component 100. Specifically, the common connection portion 33 is disposed at the center of the front side 11 of the substrate.

[0173] like Figure 5 As shown, the connecting portion 43 is disposed between the connecting front conductive layer 41 and the connecting back conductive layer 42. The connecting portion 43 is connected to the connecting front conductive layer 41 and the connecting back conductive layer 42, making them conductive.

[0174] like Figure 3 As shown, the connecting portion 43, viewed from above, is formed at a position overlapping with the housing 20. For example, the connecting portion 43, viewed from above, is formed at a position overlapping with the third sidewall portion 21c.

[0175] like Figure 5 As shown, the component connection portion 53 is disposed between the front conductive layer 51 and the back conductive layer 52 of the component. The component connection portion 53 is connected to the front conductive layer 51 and the back conductive layer 52 of the component, making them conductive.

[0176] like Figure 3 As shown, the component connecting portion 53 is formed at a position overlapping with the housing 20 when viewed from above. For example, the component connecting portion 53 is formed at a position overlapping with the fourth side wall portion 21d when viewed from above.

[0177] like Figure 6 As shown, the drive connection portion 63 is disposed between the drive front conductive layer 61 and the drive back conductive layer 62. The drive connection portion 63 is connected to the drive front conductive layer 61 and the drive back conductive layer 62, making them conductive.

[0178] like Figure 3 As shown, the drive connection portion 63 is formed at a position overlapping with the housing 20 when viewed from above. For example, the drive connection portion 63 is formed at a position overlapping with the fourth side wall portion 21d when viewed from above.

[0179] like Figure 6 As shown, the control connection portion 73 is disposed between the control front conductive layer 71 and the control back conductive layer 72. The control connection portion 73 is connected to the control front conductive layer 71 and the control back conductive layer 72, making them conductive.

[0180] like Figure 3 As shown, the control connection portion 73 is formed at a position overlapping with the housing 20 when viewed from above. For example, the control connection portion 73 is formed at a position overlapping with the third side wall portion 21c when viewed from above.

[0181] Figure 9 and Figure 10 This is a top view and circuit diagram showing an example of an electronic device 2 that uses a semiconductor light-emitting device 1. The electronic device 2 could be, for example, a distance-measuring sensor.

[0182] The electronic device 2 has a semiconductor light-emitting device 1, a circuit substrate 110 on which the semiconductor light-emitting device 1 is mounted, and wiring patterns 111 to 114 formed on the circuit substrate 110.

[0183] Multiple wiring patterns 111 to 114 are arranged at intervals. The first wiring pattern 111 and the second wiring pattern 112 are arranged in the X direction, and the third wiring pattern 113 and the fourth wiring pattern 114 are arranged in the X direction. The first wiring pattern 111 and the fourth wiring pattern 114 are arranged in the Y direction, and the second wiring pattern 112 and the third wiring pattern 113 are arranged in the Y direction.

[0184] The connecting back conductive layer 42 is positioned overlapping the first wiring pattern 111. The connecting contact back surface 40b and the first wiring pattern 111 are bonded by solder or the like. Thus, the first wiring pattern 111 is electrically connected to the lower surface electrode 92 of the semiconductor light-emitting element 80 and the second driving electrode 103 of the electronic component 100.

[0185] The conductive layer 52 on the back of the component is disposed at a position overlapping with the second wiring pattern 112. The component contact back surface 50b is bonded to the second wiring pattern 112 by solder or the like. Thus, in this embodiment, the second wiring pattern 112 is electrically connected to the upper surface electrode 91 of the component, which serves as the anode electrode.

[0186] The driving back conductive layer 62 is disposed at a position overlapping with the third wiring pattern 113. The driving contact back surface 60b is bonded to the third wiring pattern 113 by solder or the like. Thus, in this embodiment, the third wiring pattern 113 is electrically connected to the first driving electrode 101, which serves as the source electrode.

[0187] The control back conductive layer 72 is positioned to overlap with the fourth wiring pattern 114. The control contact back surface 70b is bonded to the fourth wiring pattern 114 by solder or the like. Thus, the fourth wiring pattern 114 is electrically connected to the control electrode 102.

[0188] As described above, in this embodiment, multiple contact back surfaces 40b, 50b, 60b, and 70b constitute the external terminals of the semiconductor light-emitting device 1.

[0189] In the illustrated example, the common back conductive layer 32 (common contact back surface 30b) is mounted on the heat dissipation pattern 115 formed on the circuit substrate 110 by solder or the like. Heat from the semiconductor light-emitting element 80 and the electronic component 100 is transferred from the common contact back surface 30b to the circuit substrate 110. As a result, the heat dissipation performance of the semiconductor light-emitting device 1 can be improved.

[0190] like Figure 9 As shown, the electronic device 2 has a capacitor 120. The capacitor 120 is arranged across a second wiring pattern 112 and a third wiring pattern 113, which are electrically connected. Thus, as... Figure 10 As shown, capacitor 120 is connected in parallel with semiconductor light-emitting element 80 and electronic component 100, which are connected in series. Therefore, the layout of the wiring pattern used to connect capacitor 120 can be simplified.

[0191] The function of this embodiment will be explained.

[0192] A semiconductor light-emitting element 80 and an electronic component 100 are housed within the housing 20, and the semiconductor light-emitting element 80 and the electronic component 100 are mounted on a common conductive portion 30 formed on the front side 11 of the substrate. As a result, compared to the case where the electronic component 100 is disposed outside the housing 20, the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 is shortened.

[0193] The semiconductor light-emitting device 1 according to this embodiment can achieve the following effects.

[0194] (1-1) The semiconductor light-emitting device 1 includes: a substrate 10; a common conductive portion 30 formed on the substrate 10; and a semiconductor light-emitting element 80 and an electronic component 100 mounted on the common conductive portion 30. The semiconductor light-emitting element 80 and the electronic component 100 are electrically connected via the common conductive portion 30. According to this structure, the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be shortened. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be reduced. Thus, the parasitic capacitance can be reduced, and the semiconductor light-emitting element 80 and the electronic component 100 can be electrically connected.

[0195] (1-2) A lower surface electrode 92 is formed on the lower surface 80b of the semiconductor light-emitting element 80. The electronic component 100, used when driving the semiconductor light-emitting element 80, has an upper surface 100a on which a first driving electrode 101 and a control electrode 102 are formed, and a lower surface 100b on which a second driving electrode 103 is formed. The lower surface electrode 92 and the second driving electrode 103 are bonded to a common conductive portion 30. According to this structure, the lower surface electrode 92 and the second driving electrode 103 can be electrically connected via the common conductive portion 30.

[0196] (1-3) The semiconductor light-emitting element 80 and the electronic component 100 are arranged in a predetermined direction, and the common conductive portion 30 has a common contact surface 30a extending in the Y direction, which is the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100. The semiconductor light-emitting element 80 and the electronic component 100 are disposed on the common contact surface 30a. According to this structure, the semiconductor light-emitting element 80 and the electronic component 100 can be disposed on the common conductive portion 30.

[0197] The common contact front surface 30a has a shape with the Y direction as its long side and the X direction as its short side. Based on this structure, spaces are formed on both sides of the common contact front surface 30a in the X direction, allowing other conductive parts to be disposed within these spaces.

[0198] (1-4) The substrate 10 includes: a drive conductive portion 60 having a drive contact front surface 60a electrically connected to the first drive electrode 101; and a control conductive portion 70 having a control contact front surface 70a electrically connected to the control electrode 102. The drive conductive portion 60 and the control conductive portion 70 are disposed on opposite sides in the X direction with respect to the common contact front surface 30a. With this structure, interference between the drive conductive portion 60 and the control conductive portion 70 can be avoided, and the area of ​​the drive contact front surface 60a and the control contact front surface 70a can be ensured.

[0199] (1-5) The driving contact front surface 60a and the control contact front surface 70a are arranged on both sides of the electronic component 100 in the X direction. Therefore, the length of the wire W3 can be shortened, and the parasitic capacitance based on the wire W3 can be reduced.

[0200] (1-6) A component conductive portion 50 having a component contact surface 50a is formed on one side of the common contact surface 30a in the X direction, and a connection conductive portion 40 electrically connected to the common conductive portion 30 is formed on the other side of the common contact surface 30a in the X direction. The connection conductive portion 40 has a connection contact surface 40a, which protrudes in the X direction from the end opposite to the component conductive portion 50 side of one of the two ends of the common contact surface 30a in the X direction. According to this structure, interference with the component conductive portion 50 can be avoided, and the connection conductive portion 40 can be used to make an electrical connection with the common conductive portion 30.

[0201] (1-7) The element conductive portion 50 and the drive conductive portion 60 are disposed on the same direction side on both sides of the common conductive portion 30 in the X direction. According to this structure, since the element conductive portion 50 and the drive conductive portion 60 are disposed close to each other, it is easy to arrange components (e.g., capacitors) that are connected to the element conductive portion 50 and the drive conductive portion 60.

[0202] (1-8) The connecting conductive portion 40 has a connecting contact back surface 40b located on the back surface 12 of the substrate, opposite to the connecting contact front surface 40a. The element conductive portion 50 has an element contact back surface 50b located on the back surface 12 of the substrate, opposite to the element contact front surface 50a. The driving conductive portion 60 has a driving contact back surface 60b located on the back surface 12 of the substrate, opposite to the driving contact front surface 60a. The control conductive portion 70 has a control contact back surface 70b located on the back surface 12 of the substrate, opposite to the control contact front surface 70a. According to this structure, contact with the outside of the semiconductor light-emitting device 1 can be ensured by using each contact back surface 40b, 50b, 60b, and 70b.

[0203] (1-9) The back surface of the component contact 50b is larger than the back surface of the drive contact 60b and the back surface of the control contact 70b. Based on this structure, the heat dissipation of the conductive part 50 of the component can be improved.

[0204] (1-10) The common conductive portion 30 has a common contact back surface 30b located on the back surface 12 opposite to the common contact front surface 30a. With this structure, heat dissipation can be achieved using the common contact back surface 30b. Therefore, the heat dissipation performance of the common conductive portion 30 can be improved.

[0205] (1-11) The common contact back surface 30b and the connecting contact back surface 40b are spaced apart. According to this structure, when the semiconductor light-emitting device 1 is actually mounted on the circuit substrate 110, either the common contact back surface 30b or the connecting contact back surface 40b can be used, or both can be used. Therefore, the design freedom of the circuit substrate 110 for mounting the semiconductor light-emitting device 1 can be increased.

[0206] (1-12) The substrate 10 is made of an insulating material. The front contact surfaces 30a, 40a, 50a, 60a, and 70a are the surfaces of the front conductive layers 31, 41, 51, 61, and 71 formed on the front surface of the substrate 11. The back contact surfaces 30b, 40b, 50b, 60b, and 70b are the surfaces of the back conductive layers 32, 42, 52, 62, and 72 formed on the back surface of the substrate 12. The conductive portions 30, 40, 50, 60, and 70 have connecting portions 33, 43, 53, 63, and 73 that connect the front conductive layers 31, 41, 51, 61, and 71 to the back conductive layers 32, 42, 52, 62, and 72. The connecting portions 33, 43, 53, 63, and 73 are disposed under the housing 20. Based on this structure, it is possible to suppress the obstruction between the connecting parts 33, 43, 53, 63, 73 and the wires W1 to W3.

[0207] (1-13) The semiconductor light-emitting device 1 has a housing 20 that houses the semiconductor light-emitting element 80 and the electronic component 100. According to this structure, the semiconductor light-emitting element 80 and the electronic component 100 can be protected.

[0208] [Second Implementation]

[0209] Reference Figures 11-38 The semiconductor light-emitting device 1B of the second embodiment will be described below. Furthermore, in the following description, the same reference numerals are used for components common to the semiconductor light-emitting device 1 of the first embodiment, and their descriptions are omitted. Additionally, there are cases where components having the same function as the semiconductor light-emitting device 1 of the first embodiment are marked with "B" after the reference numerals and their descriptions are omitted. Furthermore, the orientations are used in the same way as in the first embodiment.

[0210] Figure 11 This is a perspective view of the semiconductor light-emitting device 1B according to the second embodiment. Figure 12 and Figure 14This is a front view of the semiconductor light-emitting device 1B. Figure 13 This is a side view of semiconductor light-emitting device 1B. Figure 15 This is a bottom view of semiconductor light-emitting device 1B. Figure 14 The designation of the housing 20B is omitted from the semiconductor light-emitting device 1B.

[0211] Compared to the semiconductor light-emitting device 1 of the first embodiment, the semiconductor light-emitting device 1B differs in the structure of the substrate 10, the omission of the connecting conductive portion 40, the shapes of the plurality of conductive portions 30, 50, 60, and 70, and the structure of the housing 20. Furthermore, the semiconductor light-emitting device 1B further includes a capacitor 120. In the following description, the substrate of this embodiment will be referred to as substrate 10B, the plurality of conductive portions will be referred to as conductive portions 30B, 50B, 60B, and 70B, or as common conductive portion 30B, element conductive portion 50B, driving conductive portion 60B, and control conductive portion 70B, and the housing will be referred to as housing 20B. In this embodiment, the length LX in the X direction of the semiconductor light-emitting device 1B is approximately 4.5 mm, the length LY in the Y direction of the semiconductor light-emitting device 1B is approximately 4.5 mm, and the length LZ in the direction orthogonal to the X and Y directions (hereinafter referred to as the Z direction) of the semiconductor light-emitting device 1B is approximately 1.83 mm. Furthermore, the Z direction is also referred to as the thickness direction of the substrate 10B.

[0212] like Figures 17-19 As shown, the housing 20B is a component that houses the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120. The housing 20B is mounted on the substrate 10B in the same manner as in the first embodiment. The housing 20B is, for example, hollow. However, it is not limited to this; certain materials may be filled inside the housing 20B.

[0213] The housing 20B is formed as a box with an opening on one side in the Z direction. In this embodiment, the housing 20B is constructed as a single component integrally formed with the frame 21 and the cover 22. The housing 20B is formed, for example, of a light-shielding material, such as a colored resin. Light from the semiconductor light-emitting element 80 is blocked by the housing 20B. The frame 21 is a square shape formed slightly smaller than the substrate 10B. The cover 22 is formed in such a way that it has the same dimensions as the outer edge of the frame 21.

[0214] like Figure 12As shown, an opening 22a is formed in the cover 22 to allow light from the semiconductor light-emitting element 80 to pass through. The opening 22a is configured to expose at least the light-emitting region 90 of the semiconductor light-emitting element 80 in the Z direction; in this embodiment, it is configured to expose the entire upper surface 80a of the semiconductor light-emitting element 80 in the Z direction. Thus, in the top view, the opening 22a is formed to be larger than the upper surface 80a. The shape of the opening 22a in the top view is a rectangle with the longer side in the X direction and the shorter side in the Y direction. Viewed from the Z direction, the opening 22a is positioned in the cover 22 against the third sidewall 21c in the X direction and against the first sidewall 21a in the Y direction.

[0215] like Figure 12 and Figure 13 As shown, a flat light diffuser plate 130 is mounted on the cover 22 such that it covers the opening 22a from the side opposite to the substrate 10B in the Z direction. In the top view, the light diffuser plate 130 is rectangular with its longer side in the Y direction and its shorter side in the X direction. The light diffuser plate 130 can be made of a light-transmitting resin material such as polycarbonate, polyester fiber, or acrylic. The dimensions of the light diffuser plate 130 can be arbitrarily varied within a range that allows it to cover the entire opening 22a from the Z direction. In this embodiment, viewed from the Z direction, the distance DX1 from the opening 22a protruding towards the third sidewall 21c in the X direction is smaller than the distance DX2 from the opening 22a protruding towards the fourth sidewall 21d in the X direction. The protrusion distance DX1 is greater than the protrusion distance DY1 from the opening 22a towards the first sidewall 21a in the Y direction and the protrusion distance DY2 from the opening 22a towards the second sidewall 21b in the Y direction within the light diffuser plate 130. Furthermore, the protrusion distances DX1 and DX2 can be arbitrarily varied. In one example, the protrusion distance DX1 is greater than or equal to the protrusion distance DX2. At least one of the protrusion distances DX1 and DX2 can be less than or equal to the protrusion distances DY1 and DY2. Additionally, the light diffuser plate 130 can be configured to completely cover the cover 22 from the Z direction.

[0216] like Figure 14 and Figure 15 As shown, the substrate 10B in this embodiment is made of a conductive material, such as a metal plate formed of Cu. In other words, the substrate 10B is a lead frame. A separating insulating portion 13 is provided on the substrate 10B to divide it into multiple conductive portions 30B, 50B, 60B, and 70B that are insulated from each other. The common conductive portion 30B, the element conductive portion 50B, the drive conductive portion 60B, and the control conductive portion 70B can also be considered as part of the substrate 10B divided into portions that are insulated from each other by the insulating portion 13. The insulating portion 13 is formed, for example, of epoxy resin. Figures 14-16As shown, conductive parts 30B, 50B, 60B, and 70B are exposed on either the front side 11 or the back side 12 of the substrate 10B.

[0217] First, a brief description of the structure of conductive parts 30B, 50B, 60B, and 70B will be given.

[0218] like Figures 14-16 As shown, the common conductive portion 30B has a common contact front surface 30a and a common contact back surface 30b that face opposite sides in the Z direction. In this embodiment, the common contact front surface 30a is a part of the substrate front surface 11, and the common contact back surface 30b is a part of the substrate back surface 12.

[0219] like Figure 14 As shown, the common contact front surface 30a is disposed on the side of the substrate front surface 11 closer to the center portion in the X direction than the third sidewall portion 21c and the fourth sidewall portion 21d. The common contact front surface 30a is formed from top to bottom in the substrate front surface 11.

[0220] The arrangement of the common contact front surface 30a of each conductive part 50B, 60B, and 70B is the same as in the first embodiment. That is, the control conductive part 70B is arranged on one side of the common contact front surface 30a in the X direction, and the element conductive part 50B and the drive conductive part 60B are arranged on the other side of the common contact front surface 30a in the X direction. In addition, the element conductive part 50B and the drive conductive part 60B are arranged at intervals from each other in the Y direction.

[0221] like Figures 14-16 As shown, the conductive portion 50B of the component has a component contact front surface 50a and a component contact back surface 50b that face opposite each other in the Z direction. In this embodiment, the component contact front surface 50a is a part of the substrate front surface 11, and the component contact back surface 50b is a part of the substrate back surface 12.

[0222] The driving conductive portion 60B has a driving contact front surface 60a and a driving contact back surface 60b that face opposite each other in the Z direction. In this embodiment, the driving contact front surface 60a is a part of the substrate front surface 11, and the driving contact back surface 60b is a part of the substrate back surface 12.

[0223] The control conductive portion 70B has a control contact front surface 70a and a control contact back surface 70b that face opposite each other in the Z direction. In this embodiment, the control contact front surface 70a is a part of the substrate front surface 11, and the control contact back surface 70b is a part of the substrate back surface 12.

[0224] use Figures 14-22 The detailed shapes of the multiple conductive parts 30B, 50B, 60B, and 70B are described.

[0225] like Figure 14 and Figure 15 As shown, the shape of the common contact front 30a in the top view is roughly crank-shaped. Figure 15 As shown, an insulating portion 13 is provided around the common contact front surface 30a. The common contact front surface 30a has: a first common contact front surface portion 30c on which a semiconductor light-emitting element 80 is mounted; and a second common contact front surface portion 30d on which an electronic component 100 is mounted. The first common contact front surface portion 30c and the second common contact front surface portion 30d are integrally formed. The common contact front surface portion 30c and the second common contact front surface portion 30d are arranged in the Y direction. Figure 14 As shown, the first common contact front portion 30c extends from the second common contact front portion 30d toward the first sidewall portion 21a in the Y direction. The first common contact front portion 30c is disposed in the Y direction closer to the first sidewall portion 21a than the second common contact front portion 30d. In other words, the second common contact front portion 30d is disposed in the Y direction closer to the second sidewall portion 21b than the first common contact front portion 30c.

[0226] The first common contact front portion 30c and the second common contact front portion 30d are disposed offset from each other in the X direction. The first common contact front portion 30c is disposed offset from the second common contact front portion 30d relative to the third sidewall portion 21c in the X direction. In other words, the second common contact front portion 30d is disposed offset from the first common contact front portion 30c relative to the first common contact front portion 30c relative to the fourth sidewall portion 21d in the X direction. Therefore, the first common contact front portion 30c can be said to extend from the second common contact front portion 30d toward the third sidewall portion 21c in the X direction. More specifically, the first common contact front portion 30c has a portion that protrudes from the end portion 31a of the second common contact front portion 30d on the side of the third sidewall portion 21c in the X direction toward the third sidewall portion 21c. In addition, the second common contact front portion 30d can also be said to extend from the first common contact front portion 30c toward the fourth sidewall portion 21d in the X direction. More specifically, the second common contact front portion 30d has a portion that protrudes from the end portion 31f on the side of the fourth side wall portion 21d in the first common contact front portion 30c in the X direction into the fourth side wall portion 21d.

[0227] In the top view, the first common contact front surface 30c is a rectangle with its longer side in the Y direction and its shorter side in the X direction. Similarly, the second common contact front surface 30d in the top view is also a rectangle with its longer side in the X direction and its shorter side in the Y direction. The dimension of the first common contact front surface 30c in the X direction is smaller than the dimensions of the second common contact front surface 30d in both the X and Y directions. The dimension of the first common contact front surface 30c in the Y direction is larger than the dimensions of the second common contact front surface 30d in both the X and Y directions. Because the difference between the dimensions of the first common contact front surface 30c and the second common contact front surface 30d in the Y direction is greater than the difference between the dimensions of the first common contact front surface 30c and the second common contact front surface 30d in the X direction, the first common contact front surface 30c is larger than the second common contact front surface 30d.

[0228] like Figure 14 As shown, the common contact front surface 30a is formed in the Y direction to a position that overlaps with the frame 21. When viewed from the Z direction, both ends of the common contact front surface 30a in the Y direction have portions that protrude from the outer surfaces of the first side wall portion 21a, the second side wall portion 21b, and the third side wall portion 21c.

[0229] More specifically, in the first common contact front surface portion 30c, two protrusions 34a and 34b are formed at the end of the first sidewall portion 21a in the Y direction, and in the second common contact front surface portion 30d, two protrusions 34c and 34d are formed at the end of the second sidewall portion 21b. Additionally, in the first common contact front surface portion 30c, two protrusions 34e and 34f are formed at the end of the third sidewall portion 21c in the X direction.

[0230] Protrusions 34a and 34b, viewed from the Z direction, protrude from the outer surface of the first sidewall portion 21a. Protrusions 34a and 34b are formed spaced apart from each other in the X direction. Protrusion 34a is located in the X direction closer to the element conductive portion 50B (towards the fourth sidewall portion 21d) than protrusion 34b. Protrusions 34c and 34d, viewed from the Z direction, protrude from the outer surface of the second sidewall portion 21b. Protrusions 34c and 34d are formed spaced apart from each other in the X direction. Protrusion 34c is located in the X direction closer to the drive conductive portion 60B (towards the fourth sidewall portion 21d) than protrusion 34d. Protrusions 34e and 34f, viewed from the Z direction, protrude from the outer surface of the third sidewall portion 21c. Protrusions 34e and 34f are formed spaced apart from each other in the Y direction. Protrusion 34e is located in the Y direction closer to the first sidewall portion 21a than protrusion 34f.

[0231] In this embodiment, protrusions 34a to 34f are the remaining portions after the suspension leads suspending the common conductive portion 30B are cut in the lead frame. Protrusions 34a to 34f protrude from the side of the substrate 10B. Additionally, protrusions 34a to 34f protrude from the front surface 11 of the substrate. Furthermore, the number of these protrusions can be arbitrarily varied. Viewed from above, the connection portions of protrusions 34a to 34f with the common contact front surface 30a are respectively curved surfaces (see reference). Figure 15 Furthermore, the number of these protrusions can be changed arbitrarily.

[0232] In addition, such as Figure 14 and Figure 15 As shown, a plurality of recesses are formed on the common conductive portion 30B to limit the movement of the common conductive portion 30B. In this embodiment, a plurality of recesses are formed on the common contact front surface 30a. In the illustrated example, recesses 35a, a pair of recesses 35b, a pair of recesses 35c, recesses 35d, and recesses 35e are formed on the common contact front surface 30a. Furthermore, the number of these recesses can be arbitrarily varied.

[0233] like Figure 14 As shown, the recess 35a is recessed in the Y direction from the end 31b on the side of the first sidewall portion 21a in the first common contact front portion 30c toward the second sidewall portion 21b. The bottom of the recess 35a forms a curved surface. In this embodiment, the shape of the recess 35a in the top view is a concave curved surface that narrows towards the bottom. In this embodiment, the recess 35a extends to the inner surface of the first sidewall portion 21a when viewed from the Z direction. Furthermore, as... Figure 20 As shown, the recess 35a is recessed in the Z-direction of the front layer portion from the first common contact front portion 30c to the common conductive portion 30B. An insulating portion 13 enters the recess 35a. The insulating portion 13 entering the recess 35a has a front-side semi-insulating portion 13U that does not penetrate the substrate 10B in the Z-direction. The front-side semi-insulating portion 13U of the recess 35a is... Figure 15 The portion shown is surrounded by the recess 35a and the dashed line. The portion of the insulating portion 13 above the front-side semi-insulating portion 13U of the recess 35a penetrates the substrate 10B in the Z direction. Furthermore, the dimensions of the recess 35a in the X and Y directions can be arbitrarily changed. In one example, when viewed from the Z direction, the inner edge of the recess 35a can be located either inside or outside the inner surface of the first sidewall portion 21a.

[0234] like Figure 14As shown, a pair of recesses 35b are recessed in the X direction from the end 31c of the fourth sidewall portion 21d side in the X direction of the second common contact front portion 30d. The bottoms of the pair of recesses 35b are each formed by a curved surface. In this embodiment, the shape of the pair of recesses 35b in the top view is a concave curved surface that narrows towards the bottom. In addition, although not shown, the front layer portion of the pair of recesses 35b in the Z direction from the second common contact front portion 30d to the common conductive portion 30B is recessed in the Z direction. An insulating portion 13 enters each of the pair of recesses 35b. The insulating portion 13 entering each of the pair of recesses 35b has a front-side semi-insulating portion 13U that does not penetrate the substrate 10B in the Z direction. The front-side semi-insulating portion 13U of each of the pair of recesses 35b is Figure 15 The portion shown, surrounded by a pair of recesses 35b and a dashed line, is larger than the flange 36 described later (see reference). Figure 17 The portion on the inner side. The portion of the insulating portion 13 that is closer to the driving conductive portion 60B in the X direction than the front side half insulating portion 13U of the pair of recesses 35b penetrates the substrate 10B in the Z direction.

[0235] A pair of recesses 35c are recessed in the X direction from the end 31a of the second common contact front portion 30d. The bottoms of the pair of recesses 35c are each formed by a curved surface. In this embodiment, the shapes of the pair of recesses 35c in the top view are concave curved surfaces that narrow towards the bottom. In addition, although not shown, the pair of recesses 35c, like the pair of recesses 35b, are recessed in the Z direction of the front layer portion from the second common contact front portion 30d to the common conductive portion 30B. The insulating portion 13 enters into each of the pair of recesses 35c. The shapes of the pair of recesses 35c in the top view are symmetrical to the shapes of the pair of recesses 35b in the top view.

[0236] Furthermore, the dimensions in the X and Y directions of the pair of recesses 35b and 35c can be arbitrarily changed. In one example, at least one of the dimensions in the X and Y directions of the pair of recesses 35b can be different from that of the pair of recesses 35c.

[0237] like Figure 14 As shown, the recess 35d is recessed in the Y direction from the end 31d on the third sidewall portion 21c side of the first common contact front portion 30c toward the fourth sidewall portion 21d. The bottom of the recess 35d is formed by a curved surface. In this embodiment, the shape of the recess 35d in the top view is a concave curved surface that narrows towards the bottom. In this embodiment, the recess 35d extends to the inner surface of the third sidewall portion 21c when viewed from the Z direction. Furthermore, as... Figure 20As shown, the recess 35d is recessed in the Z-direction of the front layer portion from the first common contact front portion 30c to the common conductive portion 30B. An insulating portion 13 enters the recess 35d. The insulating portion 13 entering the recess 35d has a front-side semi-insulating portion 13U that does not penetrate the substrate 10B in the Z-direction. The front-side semi-insulating portion 13U of the recess 35d is... Figure 15 The portion shown, enclosed by the recess 35d and the dashed line, is larger than the flange 36 (see reference). Figure 17 The portion on the inner side. The portion of the insulating portion 13 that is to the left of the front-side semi-insulating portion 13U of the recess 35d penetrates the substrate 10B in the Z direction. Furthermore, the dimensions of the recess 35d in the X and Y directions can be arbitrarily changed. In one example, the inner edge of the recess 35d, viewed from the Z direction, can be located inside the inner surface of the third sidewall portion 21c, or it can be located outside the inner surface of the third sidewall portion 21c.

[0238] like Figure 14 As shown, the recess 35e is recessed in the Y direction from the end 31e on the side of the second sidewall portion 21b in the first common contact front portion 30c. The bottom of the recess 35e is formed by a curved surface. In this embodiment, the shape of the recess 35e in the top view is a concave curved surface that narrows towards the bottom. In addition, as Figure 21 As shown, the recess 35e is recessed in the Z-direction of the front layer portion from the first common contact front portion 30c to the common conductive portion 30B. An insulating portion 13 enters the recess 35e. The insulating portion 13 entering the recess 35e has a front-side semi-insulating portion 13U that does not penetrate the substrate 10B in the Z-direction. The front-side semi-insulating portion 13U of the recess 35e is... Figure 15 The portion shown, enclosed by the recess 35e and the dashed line, is larger than the flange 36 (see reference). Figure 19 The portion on the inner side. The portion of the insulating portion 13 below the front-side semi-insulating portion 13U of the recess 35e penetrates the substrate 10B in the Z direction. Furthermore, the dimensions of the recess 35e in the X and Y directions can be arbitrarily changed. In one example, the inner edge of the recess 35e, viewed from the Z direction, can be located inside the inner surface of the third sidewall portion 21c, or it can be located outside the inner surface of the third sidewall portion 21c.

[0239] Furthermore, the shapes of the recesses 35a to 35e in the top view can be arbitrarily changed. In one example, the shape of the recesses 35a to 35e in the top view can be rectangular. The depth of one part of the recesses 35a to 35e in the top view can be different from the depth of another part of the recesses 35a to 35e.

[0240] like Figures 20-22As shown, in a cross-sectional view of the common conductive portion 30B cut along the Z-direction at the peripheral edge of the common contact front surface 30a, a flange 36 is formed. In other words, the common conductive portion 30B, which is closer to the common contact back surface 30b than the front layer portion containing the common contact front surface 30a and includes the back layer portion of the common contact back surface 30b, is recessed relative to the front layer portion in a direction orthogonal to the Z-direction. An insulating portion 13 enters this recessed portion. The insulating portion 13 that enters the common contact back surface 30b relative to the flange 36 is a back-side semi-insulating portion 13L that does not penetrate the substrate 10B in the Z-direction. The portion of the insulating portion 13 that is outermost than the flange 36 penetrates the substrate 10B in the Z-direction and is connected to the back-side semi-insulating portion 13L of the flange 36.

[0241] In addition, the peripheral edge portion that commonly contacts the front surface 30a includes protrusions 34a to 34f (see reference). Figure 14 and Figure 15 Protrusions 34a to 34f extend from flange 36 and are formed with a thickness equal to that of flange 36. That is, the insulating portion 13 enters the common contact back surface 30b side relative to the protrusions 34a to 34f, and the protrusions 34a to 34f do not protrude from the substrate back surface 12. The insulating portion 13 that enters the common contact back surface 30b side relative to the protrusions 34a to 34f is a back surface semi-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. Viewed from the Z direction, in a direction orthogonal to the extending direction of the protrusions 34a to 34f, portions on both sides of the protrusions 34a to 34f in the insulating portion 13 penetrate the substrate 10B and connect with the back surface semi-insulating portion 13L of the protrusions 34a to 34f. The common contact back surface 30b protrudes from the substrate back surface 12 as a portion inside the flange 36 of the common contact front surface 30a. Furthermore, although not shown, the recesses 35a to 35e are formed to the inner side of the common contact front surface 30a, beyond the peripheral edge (flange 36) of the common contact front surface 30a. That is, a portion of the recesses 35a to 35e overlaps with the common contact back surface 30b when viewed in the Z direction. Therefore, a portion of the front-side semi-insulating portion 13U of the recesses 35a to 35e overlaps with the common contact back surface 30b when viewed in the Z direction.

[0242] like Figure 14 and Figure 15 As shown, the component contact front surface 50a is disposed at the corner of the first sidewall portion 21a and the fourth sidewall portion 21d in the substrate 10B. The component contact front surface 50a is disposed at a distance from the first common contact front surface portion 30c in the X direction. An insulating portion 13 is provided around the component contact front surface 50a.

[0243] like Figure 14As shown, viewed from the Y direction, the portion of the third sidewall portion 21c of the component contact front surface 50a overlaps with the portion of the fourth sidewall portion 21d of the second common contact front surface portion 30d. It can be said that the component contact front surface 50a enters the recessed area formed by the offset of the first common contact front surface portion 30c relative to the second common contact front surface portion 30d in the X direction. Furthermore, the component contact front surface 50a is opposite to the first common contact front surface portion 30c in the X direction.

[0244] like Figure 15 As shown, in the top view, the component contact front surface 50a has a rectangular shape with the X direction as the longer side and the Y direction as the shorter side. The Y-direction dimension of the component contact front surface 50a is smaller than the Y-direction dimension of the first common contact front surface portion 30c. The X-direction dimension of the component contact front surface 50a is larger than the X-direction dimension of the first common contact front surface portion 30c.

[0245] like Figure 14 As shown, the end of the component that contacts the front surface 50a on the side of the first sidewall portion 21a is formed to the position where it overlaps with the first sidewall portion 21a when viewed from the Z direction, and has a portion that protrudes beyond the outer surface of the first sidewall portion 21a. The end of the component that contacts the front surface 50a on the side of the fourth sidewall portion 21d is formed to the position where it overlaps with the fourth sidewall portion 21d when viewed from the Z direction, and has a portion that protrudes beyond the outer surface of the fourth sidewall portion 21d.

[0246] More specifically, protrusions 54a and 54b are formed at the end of the component contact front surface 50a on the side of the first sidewall portion 21a in the Y direction, and a protrusion 54c is formed at the end of the component contact front surface 50a on the side of the fourth sidewall portion 21d in the X direction. Protrusions 54a and 54b protrude from the outer surface of the first sidewall portion 21a when viewed from the Z direction. Protrusions 54a and 54b are formed at intervals from each other in the X direction. Protrusion 54a is located closer to the fourth sidewall portion 21d than protrusion 54b. Protrusion 54c protrudes from the outer surface of the fourth sidewall portion 21d when viewed from the Z direction. Protrusion 54c is formed in the central portion of the component contact front surface 50a in the Y direction. In this embodiment, protrusions 54a to 54c are the remaining portions after the suspension lead of the suspended conductive portion 50B of the component is cut in the lead frame. Furthermore, the number of these protrusions can be arbitrarily varied. Viewed from the Z direction, the connection portions between the protrusions 54a-54c and the contact surface 50a of the component are respectively referred to as curved surfaces (see reference). Figure 15 ).

[0247] Furthermore, a recess 55 is formed in the conductive portion 50B of the component to restrict the movement of the conductive portion 50B. In this embodiment, the recess 55 is formed on the contact surface 50a of the component. Moreover, the number of recesses can be arbitrarily varied.

[0248] like Figure 14 As shown, the recess 55 is formed at the end of the first sidewall portion 21a and the end of the third sidewall portion 21c in the component contact front surface 50a. The recess 55 is recessed in the Y direction from the end 51a of the first sidewall portion 21a in the component contact front surface 50a toward the second sidewall portion 21b. The length of the recess 55 in the Y direction (the depth of the recess 55a in the top view) is longer (deeper) than the length of the recesses 35a, 35d, and 35e in the Y direction and the length of the recesses 35b and 35c in the X direction (the depth of the recesses 35a to 35e in the top view). The bottom of the recess 55 is formed by a curved surface. In this embodiment, the shape of the recess 55 in the top view has a portion that extends in the Y direction without changing its width dimension, and is a concave curved surface that narrows towards the bottom. In this embodiment, the recess 55 extends in the Z direction to a point inside the inner surface of the first sidewall portion 21a. The recess 55 serves as a marker for the formation position of the second welding part of the conductor W1.

[0249] In addition, such as Figure 20 As shown, the recess 55 is recessed in the Z-direction of the front layer portion from the component contact front surface 50a to the component conductive portion 50B. An insulating portion 13 enters the recess 55. The insulating portion 13 entering the recess 55 has a front-side semi-insulating portion 13U that does not penetrate the substrate 10B in the Z-direction. The front-side semi-insulating portion 13U of the recess 55 is composed of… Figure 15 The portion shown in the recess 55 and the part enclosed by the dashed line is larger than the flange 56 described later (see reference). Figure 20 The portion on the inner side. The portion of the insulating portion 13 that is above the front-side semi-insulating portion 13U of the recess 55 penetrates the substrate 10B in the Z direction. In this embodiment, the depth of the recess 55 in the Z direction is the same as that of the recesses 35a to 35e in the Z direction (refer to...). Figure 15 The depths of the recesses 55 and 35a to 35e in the Z direction are equal. Here, if the difference between the depth of the recess 55 in the Z direction and the depth of the recesses 35a to 35e in the Z direction is, for example, within 5% of the depth of the recesses 35a to 35e in the Z direction, it can be said that the depth of the recess 55 in the Z direction is equal to the depth of the recesses 35a to 35e in the Z direction.

[0250] also, Figure 14 The dimensions of the recess 55 in the X and Y directions can be arbitrarily changed. In one example, when viewed in the Z direction, the inner edge of the recess 55 can be located at the same position as the inner surface of the first sidewall portion 21a, or it can be located outside the inner surface of the first sidewall portion 21a. Furthermore, the orientation of the recess 55 can be arbitrarily changed. In one example, the recess 55 can also be recessed in the Y direction from the end 51b on the third sidewall portion 21c side of the component contact front 50a towards the fourth sidewall portion 21d side.

[0251] like Figure 20 As shown, a flange 56 is formed at the peripheral edge of the component contact front surface 50a in a cross-sectional view of the component conductive portion 50B cut by a plane along the Z direction. In other words, the component conductive portion 50B, which is closer to the component contact back surface 50b than the front layer portion containing the component contact front surface 50a and includes the back layer portion containing the component contact back surface 50b, is recessed relative to the front layer portion in a direction orthogonal to the Z direction. An insulating portion 13 enters into this recessed portion. The insulating portion 13 that enters the component contact back surface 50b relative to the flange 56 is a back-side semi-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. The portion of the insulating portion 13 that is outermost than the flange 56 penetrates the substrate 10B in the Z direction and is connected to the back-side semi-insulating portion 13L of the flange 56.

[0252] In addition, the peripheral edge of the component contacting the front surface 50a includes protrusions 54a to 54c (see reference). Figure 14 and Figure 15 Protrusions 54a to 54c are exposed on the side surface of substrate 10B and the front surface of substrate 11, respectively. Protrusions 54a to 54c extend from flange 56 and are formed with a thickness equal to that of flange 56. That is, relative to protrusions 54a to 54c, insulating portion 13 enters the component contact back surface 50b side, and protrusions 54a to 54c are not exposed from the substrate back surface 12. The insulating portion 13 that enters the component contact back surface 50b side relative to the protrusions 54a to 54c is a back surface semi-insulating portion 13L that does not penetrate substrate 10B in the Z direction. Viewed from the Z direction, in a direction orthogonal to the extending direction of protrusions 54a to 54c, portions on both sides of protrusions 54a to 54c in insulating portion 13 penetrate substrate 10B and are connected to the back surface semi-insulating portion 13L of protrusions 54a to 54c. The component contact back surface 50b protrudes from the substrate back surface 12 as a portion inside the flange 56 of the component contact front surface 50a. Additionally, although not shown, a recess 55 is formed to the inner side of the component contact front surface 50a than the peripheral edge portion (flange 56). That is, a portion of the recess 55 overlaps with the component contact back surface 50b when viewed in the Z direction. Therefore, a portion of the front-side semi-insulating portion 13U of the recess 55 overlaps with the component contact back surface 50b when viewed in the Z direction.

[0253] like Figure 14 and Figure 15 As shown, the drive contact front surface 60a is arranged so as to be aligned with the component contact front surface 50a in the X direction and spaced apart from the component contact front surface 50a in the Y direction. Figure 14As shown, the driving contact front surface 60a is configured to surround the second common contact front surface 30d from the fourth sidewall portion 21d in the X direction and the first sidewall portion 21a in the Y direction. The driving contact front surface 60a in the top view has a generally L-shaped shape. Figure 15 As shown, an insulating portion 13 is provided around the drive contact front surface 60a.

[0254] The driving contact front surface 60a has a first driving contact front surface portion 60c and a second driving contact front surface portion 60d. The first driving contact front surface portion 60c and the second driving contact front surface portion 60d are formed integrally. The first driving contact front surface portion 60c and the second driving contact front surface portion 60d are arranged in the Y direction. Figure 14 As shown, the first driving contact front surface portion 60c is disposed in the Y direction closer to the first sidewall portion 21a than the second driving contact front surface portion 60d. In other words, the second driving contact front surface portion 60d is disposed in the Y direction closer to the second sidewall portion 21b than the first driving contact front surface portion 60c. That is, the first driving contact front surface portion 60c is disposed in the Y direction between the component contact front surface 50a and the second driving contact front surface portion 60d. The first driving contact front surface portion 60c is disposed in an X direction that overlaps with the first common contact front surface portion 30c. The first driving contact front surface portion 60c is disposed in an X direction that overlaps with the second common contact front surface portion 30d.

[0255] like Figure 15 As shown, the first driving contact front surface 60c extends in the X direction, and the second driving contact front surface 60d extends in the Y direction. In the top view, the first driving contact front surface 60c is rectangular with its longer side in the X direction and its shorter side in the Y direction. In the top view, the second driving contact front surface 60d is rectangular with its longer side in the Y direction and its shorter side in the X direction. Figure 14 As shown, the second driving contact front surface portion 60d extends from the end of the first driving contact front surface portion 60c on the fourth sidewall portion 21d side toward the second sidewall portion 21b. In this way, the second driving contact front surface portion 60d is recessed relative to the first driving contact front surface portion 60c in a manner that its length in the X direction is shorter than that of the first driving contact front surface portion 60c. That is, the driving contact front surface 60a has a recessed region 60r divided by the first driving contact front surface portion 60c and the second driving contact front surface portion 60d. The second common contact front surface portion 30d enters this recessed region 60r. The second common contact front surface portion 30d is opposite to the second driving contact front surface portion 60d in the X direction. The portion of the second common contact front surface portion 30d that enters the recessed region 60r overlaps with the first driving contact front surface portion 60c when viewed from the Y direction.

[0256] The first driving contact front surface portion 60c is opposite to the first common contact front surface portion 30c in the X direction and opposite to the element contact front surface portion 50a in the Y direction. The length of the first driving contact front surface portion 60c in the X direction is equal to the length of the element contact front surface portion 50a in the X direction. Here, if the difference between the length of the first driving contact front surface portion 60c in the X direction and the length of the element contact front surface portion 50a in the X direction is, for example, within 5% of the length of the element contact front surface portion 50a in the X direction, it can be said that the length of the first driving contact front surface portion 60c in the X direction is equal to the length of the element contact front surface portion 50a in the X direction.

[0257] like Figure 14 As shown, the end portion of the drive contact front surface 60a on the fourth sidewall portion 21d side, when viewed from the Z direction, extends to a position overlapping with the fourth sidewall portion 21d, and has a portion protruding beyond the outer surface of the fourth sidewall portion 21d. The end portion of the drive contact front surface 60a on the second sidewall portion 21b side, when viewed from the Z direction, extends to a position overlapping with the second sidewall portion 21b, and has a portion protruding beyond the outer surface of the second sidewall portion 21b.

[0258] More specifically, protrusions 64a and 64b are formed at the end of the fourth sidewall portion 21d in the X direction of the driving contact front surface 60a, and a protrusion 64c is formed at the end of the second sidewall portion 21b in the Y direction of the driving contact front surface 60a. Protrusions 64a and 64b protrude from the outer surface of the fourth sidewall portion 21d when viewed from the Z direction. Protrusions 64a and 64b are formed spaced apart from each other in the Y direction. Protrusion 64a is located closer to the element contact front surface 50a than protrusion 64b. In this embodiment, protrusion 64a is formed on the first driving contact front surface 60c, and protrusion 64b is formed on the second driving contact front surface 60d. Protrusion 64c protrudes from the outer surface of the second sidewall portion 21b when viewed from the Z direction. Protrusion 64c is formed on the second driving contact front surface 60d. Protrusion 64c is formed at the end of the second common contact front surface 30d in the second driving contact front surface 60d in the X direction. In this embodiment, protrusions 64a and 64c are the portions remaining after the suspension lead suspending the drive conductive part 60B in the lead frame is cut. Protrusion 64a is provided on the first drive contact front surface 60c. Protrusions 64b and 64c are respectively provided on the second drive contact front surface 60d. Furthermore, the number of these protrusions can be arbitrarily changed. Viewed from the Z direction, the connection portions of protrusions 64a and 64c with the drive contact front surface 60a are respectively curved surfaces (see reference). Figure 15 ).

[0259] Furthermore, a recess 65 is formed in the drive conductive portion 60B to limit the movement of the drive conductive portion 60B. In this embodiment, the recess 65 is formed in the drive contact front surface 60a. Moreover, the number of recesses can be arbitrarily varied.

[0260] A recess 65 is formed at the end portion of the second driving contact front surface portion 60d on the side of the first driving contact front surface portion 60c in the Y direction. The recess 65 is recessed from the end portion 61a on the side of the third sidewall portion 21c in the second driving contact front surface portion 60d toward the side of the fourth sidewall portion 21d. Furthermore, the recess 65 is formed adjacent to the first driving contact front surface portion 60c in the Y direction. Specifically, a portion of the recess 65 is formed by the end portion 61b on the side of the second sidewall portion 21b in the first driving contact front surface portion 60c. In this embodiment, the maximum value of the width of the recess 65 is equal to the gap in the Y direction between the first driving contact front surface portion 60c and the second common contact front surface portion 30d. Here, if the difference between the maximum value of the width of the recess 65 and the aforementioned gap is, for example, within 5% of the aforementioned gap, it can be said that the maximum value of the width of the recess 65 is equal to the gap in the Y direction between the first driving contact front surface portion 60c and the second common contact front surface portion 30d.

[0261] The recess 65 extends through the conductive portion 60B in the Z direction. The insulating portion 13 enters the recess 65. In other words, the recess 65 differs from other recesses 35a-35e and 55 in that the insulating portion 13, which extends through the substrate 10B in the Z direction, enters the recess 65.

[0262] like Figure 21 As shown, in a cross-sectional view of the drive contact front surface 60a, a flange 66 is formed on the peripheral edge of the drive conductive portion 60B cut along a plane along the Z direction. In other words, the drive conductive portion 60B is recessed relative to the front layer portion containing the drive contact front surface 60a, towards the drive contact back surface 60b, and the back layer portion containing the drive contact back surface 60b is recessed in a direction orthogonal to the Z direction relative to the front layer portion. An insulating portion 13 enters this recessed portion. The insulating portion 13 that enters the drive contact back surface 60b relative to the flange 66 is a back-side semi-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. The portion of the insulating portion 13 that is outermost than the flange 66 penetrates the substrate 10B in the Z direction. Furthermore, the peripheral edge of the drive contact front surface 60a includes protrusions 64a to 64c (see reference). Figure 14 and Figure 15Protrusions 64a to 64c extend from flange 66 and are formed with a thickness equal to that of flange 66. That is, the insulating portion 13 enters the drive contact back surface 60b side relative to the protrusions 64a to 64c, and the protrusions 64a to 64c do not protrude from the substrate back surface 12. The insulating portion 13 that enters the drive contact back surface 60b side relative to the protrusions 64a to 64c is a back surface semi-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. Viewed from the Z direction, in a direction orthogonal to the extending direction of the protrusions 64a to 64c, portions on both sides of the protrusions 64a to 64c in the insulating portion 13 penetrate the substrate 10B and connect with the back surface semi-insulating portion 13L of the protrusions 64a to 64c. The drive contact back surface 60b, as the portion of the drive contact front surface 60a that is inside the flange 66, protrudes from the substrate back surface 12. Additionally, although not shown, the recess 65 is formed to the inner side of the drive contact front surface 60a, which is closer to the peripheral edge (flange 66) of the drive contact front surface 60a.

[0263] like Figure 14 and Figure 15 As shown, the control contact front surface 70a is disposed at the corner of the second sidewall portion 21b and the third sidewall portion 21c in the substrate 10B. The control contact front surface 70a is disposed spaced apart from the second common contact front surface portion 30d in the X direction. Furthermore, the control contact front surface 70a is disposed spaced apart from the first common contact front surface portion 30c in the Y direction. Viewed from the X direction, the control contact front surface 70a is disposed in a manner that overlaps with the second common contact front surface portion 30d. That is, the control contact front surface 70a is opposite to the second common contact front surface portion 30d in the X direction. Viewed from the Y direction, the control contact front surface 70a is disposed in a manner that overlaps with the first common contact front surface portion 30c. That is, the control contact front surface 70a is opposite to the portion of the first common contact front surface portion 30c that protrudes from the second common contact front surface portion 30d toward the third sidewall portion 21c in the Y direction. In this way, the control contact front surface 70a is formed in the area surrounded by the first common contact front surface portion 30c and the second common contact front surface portion 30d. Alternatively, it can be said that the control contact front 70a enters the recessed area formed by the deviation of the first common contact front portion 30c relative to the second common contact front portion 30d in the X direction.

[0264] In addition, such as Figure 14 and Figure 15 As shown, the second common contact front surface portion 30d is disposed in the X direction between the driving conductive portion 60B and the control conductive portion 70B. Alternatively, the second common contact front surface portion 30d can be described as being disposed in the X direction between the second driving contact front surface portion 60d and the control contact front surface portion 70a.

[0265] like Figure 15As shown in the top view, the control contact front surface 70a has a rectangular shape with the Y direction as its longer side and the X direction as its shorter side. The Y-direction dimension of the control contact front surface 70a is smaller than the Y-direction dimension of the first common contact front surface portion 30c. The X-direction dimension of the control contact front surface 70a is smaller than the X-direction dimension of the first common contact front surface portion 30c.

[0266] The end portion of the control contact front surface 70a on the second sidewall portion 21b side, when viewed from the Z direction, extends to a position overlapping with the second sidewall portion 21b, and has a portion protruding beyond the outer surface of the second sidewall portion 21b. The end portion of the control contact front surface 70a on the third sidewall portion 21c side, when viewed from the Z direction, extends to a position overlapping with the third sidewall portion 21c, and has a portion protruding beyond the outer surface of the third sidewall portion 21c.

[0267] More specifically, a protrusion 74a is formed at the end of the second sidewall portion 21b in the Y direction of the control contact front 70a, and a protrusion 74b is formed at the end of the third sidewall portion 21c in the X direction of the control contact front 70a. The protrusion 74a protrudes from the outer surface of the second sidewall portion 21b when viewed from the Z direction. The protrusion 74a is formed at the central portion in the Y direction of the control contact front 70a. The protrusion 74b protrudes from the outer surface of the third sidewall portion 21c when viewed from the Z direction. The protrusion 74b is formed at the end of the second common contact front portion 30d in the X direction of the control contact front 70a. In this embodiment, the protrusions 74a and 74b are the portions remaining after the suspension lead suspending the control conductive portion 70B in the lead frame is cut. Furthermore, the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection portions of the protrusions 74a and 74b with the control contact front 70a are respectively curved surfaces (see reference). Figure 15 ).

[0268] A flange 76 is formed on the peripheral edge of the control contact front 70a in a cross-sectional view of the control conductive part 70B cut by a plane along the Z direction (see reference). Figure 18In other words, the control conductive portion 70B, which is closer to the control contact back surface 70b than the front layer portion of the saturated control contact front surface 70a and includes the back layer portion of the control contact back surface 70b, is recessed in the X and Y directions relative to the front layer portion. The insulating portion 13 enters this recessed portion. The insulating portion 13 that enters the control contact back surface 70b side relative to the flange 76 of the control contact front surface 70a is a back surface semi-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. The portion of the insulating portion 13 that is outer of the flange 76 penetrates the substrate 10B in the Z direction. Furthermore, the peripheral edge portion of the control contact front surface 70a includes protrusions 74a and 74b. The protrusions 74a and 74b extend from the flange 76 and are formed in a manner equal to the thickness of the flange 76. That is, the insulating portion 13 enters the control contact back surface 70b side relative to the protrusions 74a and 74b, and the protrusions 74a and 74b are not exposed from the substrate back surface 12. The insulating portion 13, relative to the protrusions 74a and 74b entering the control contact back surface 70b, is a back surface semi-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. Viewed from the Z direction, in a direction orthogonal to the extending direction of the protrusions 74a and 74b, portions on both sides of the protrusions 74a and 74b penetrate the substrate 10B and connect with the back surface semi-insulating portion 13L of the protrusions 74a and 74b. The control contact back surface 70b protrudes from the substrate back surface 12 as a portion inside the flange 76.

[0269] like Figure 15 As shown, in this embodiment, the common contact front surface 30a is larger than the other contact front surfaces 50a, 60a, and 70a. The first common contact front surface portion 30c is larger than the other contact front surfaces 50a, 60a, and 70a. The second common contact front surface portion 30d is larger than the control contact front surface 70a. The component contact front surface 50a is larger than the control contact front surface 70a. The drive contact front surface 60a is larger than the control contact front surface 70a.

[0270] Next, the layout of the substrate back 12 sides of the multiple conductive parts 30B, 50B, 60B, and 70B will be described.

[0271] like Figure 16 As shown, the common contact back surface 30b has a first common contact back surface portion 30e and a second common contact back surface portion 30f. The first common contact back surface portion 30e and the second common contact back surface portion 30f are formed at a distance from each other in the Y direction. An insulating portion 13 is present between the first common contact back surface portion 30e and the second common contact back surface portion 30f.

[0272] More specifically, such as Figure 16As shown, in the Y direction, between the first common contact back surface portion 30e and the second common contact back surface portion 30f (dashed line portion), a recess 35f is formed, recessed from the substrate back surface 12 towards the substrate front surface 11. An insulating portion 13 enters this recess 35f. The insulating portion 13 entering the recess 35f is a back surface half-insulating portion 13L that does not penetrate the substrate 10B in the Z direction. In other words, the first common contact back surface portion 30e and the second common contact back surface portion 30f are separated by the back surface half-insulating portion 13L. This back surface half-insulating portion 13L penetrates the common contact back surface 30b in the X direction.

[0273] like Figure 16 As shown, an insulating portion 13 penetrating the substrate 10B is provided around the common conductive portion 30B. The back-side semi-insulating portion 13L provided in the recess 35f is connected to the insulating portions 13 provided on the left and right sides of the common conductive portion 30B. More specifically, the back-side semi-insulating portion 13L provided in the recess 65a is connected to the following insulating portions: an insulating portion 13 penetrating the substrate 10B located below the portion protruding to the left of the second common contact back surface portion 30f and the first common contact back surface portion 30e; and an insulating portion 13 penetrating the substrate 10B located on the right side of the first common contact back surface portion 30e and the upper side of the second common contact back surface portion 30f.

[0274] The first common contact back portion 30e is formed on the back side 12 of the substrate, on the opposite side to the first common contact front portion 30c. Viewed from the back side 12 of the substrate, the first common contact back portion 30e is formed in the upper left portion. Like the first common contact front portion 30c, the first common contact back portion 30e is rectangular with the X direction as its shorter side and the Y direction as its longer side. Viewed from the Z direction, the first common contact back portion 30e is smaller than the first common contact front portion 30c.

[0275] The second common contact back portion 30f is formed on the back surface 12 of the substrate, on the opposite side to the second common contact front portion 30d. The second common contact back portion 30f is formed at the center in the X direction and at the lower part in the Y direction of the back surface 12 of the substrate. Like the second common contact front portion 30d, the second common contact back portion 30f is rectangular in shape with the X direction as its longer side and the Y direction as its shorter side. Viewed from the Z direction, the second common contact back portion 30f is smaller than the second common contact front portion 30d.

[0276] On the right side of the first common contact back surface 30e, there are component contact back surface 50b and drive contact back surface 60b.

[0277] The component contact back surface 50b is formed on the back surface 12 of the substrate, opposite to the component contact front surface 50a. The component contact back surface 50b is formed in the upper left portion of the back surface 12 of the substrate. The component contact back surface 50b is spaced apart from the common contact back surface 30b and the two are not connected. That is, an insulating portion 13 exists between the component contact back surface 50b and the common contact back surface 30b. This insulating portion 13 extends in the Y direction.

[0278] The component contact back surface 50b is a rectangle with the X direction as its longer side and the Y direction as its shorter side. Viewed from the Z direction, the component contact back surface 50b is smaller than the component contact front surface 50a. The X-direction length of the component contact back surface 50b is equal to the X-direction length of the first common contact back surface portion 30e. Here, if the difference between the X-direction length of the component contact back surface 50b and the X-direction length of the first common contact back surface portion 30e is within 5% of the X-direction length of the first common contact back surface portion 30e, it can be said that the X-direction length of the component contact back surface 50b is equal to the X-direction length of the first common contact back surface portion 30e.

[0279] The drive contact back surface 60b has a first drive contact back surface portion 60e and a second drive contact back surface portion 60f. The first drive contact back surface portion 60e and the second drive contact back surface portion 60f are formed at a distance from each other in the Y direction. An insulating portion 13 is present between the first drive contact back surface portion 60e and the second drive contact back surface portion 60f.

[0280] More specifically, such as Figure 16 As shown, a recess 65a is provided in the driving conductive portion 60B between the first driving contact back surface portion 60e and the second driving contact back surface portion 60f, recessed from the substrate back surface 12 toward the substrate front surface 11. This recess 65a does not penetrate the substrate 10B. A back surface semi-insulating portion 13L, which does not penetrate the substrate 10B in the Z direction, enters the recess 65a. This back surface semi-insulating portion 13L penetrates the driving contact back surface 60b in the X direction. Furthermore, the recess 65 is connected to the recess 65a in the Z direction.

[0281] In addition, such as Figure 16As shown, an insulating portion 13 penetrating the substrate 10B is provided around the driving conductive portion 60B. A back-side semi-insulating portion 13L provided in the recess 65a is connected to the insulating portions 13 provided on the left and right sides of the driving conductive portion 60B. More specifically, the back-side semi-insulating portion 13L provided in the recess 65a is connected to the following insulating portions: an insulating portion 13 penetrating the substrate 10B located below the portion protruding to the left of the second driving contact back surface portion 60f and the first driving contact back surface portion 60e; and an insulating portion 13 penetrating the substrate 10B located on the right side of both the first driving contact back surface portion 60e and the second driving contact back surface portion 60f.

[0282] The first driving contact back surface portion 60e is formed on the back surface portion 12 of the substrate, on the opposite side to the first driving contact front surface portion 60c. The first driving contact back surface portion 60e is formed in the right central portion of the back surface portion 12 of the substrate. The first driving contact back surface portion 60e is arranged spaced apart from the component contact back surface portion 50b in the Y direction, with the first driving contact back surface portion 60e aligned with the component contact back surface portion 50b in the X direction. An insulating portion 13 is present between the first driving contact back surface portion 60e and the component contact back surface portion 50b. The insulating portion 13 extends in the X direction and is connected to the insulating portion 13 between the component contact back surface portion 50b and the common contact back surface portion 30b.

[0283] Like the front portion 60c, the back portion 60e of the first drive contact is rectangular in shape with the X direction as its longer side and the Y direction as its shorter side. The back portion 60e is smaller than the front portion 60c when viewed from the Z direction. The length of the back portion 60e in the X direction is equal to the length of the back portion 50b of the component contact in the X direction.

[0284] The lower edge of the first driving contact back surface 60e is aligned with the lower edge of the first common contact back surface 30e in the Y direction. Therefore, the length from the upper edge of the element contact back surface 50b to the lower edge of the first driving contact back surface 60e is equal to the length of the first common contact back surface 30e in the X direction. Here, if the difference between the length from the upper edge of the element contact back surface 50b to the lower edge of the first driving contact back surface 60e and the length of the first common contact back surface 30e in the X direction is within 5% of the length of the first common contact back surface 30e in the X direction, it can be said that the length from the upper edge of the element contact back surface 50b to the lower edge of the first driving contact back surface 60e is equal to the length of the first common contact back surface 30e in the X direction.

[0285] The second driving contact back side portion 60f is formed on the back side of the substrate 12, opposite to the front side portion 60d of the second driving contact. Like the front side portion 60d, the second driving contact back side portion 60f is rectangular, with the X direction as its shorter side and the Y direction as its longer side. The second driving contact back side portion 60f is formed in the lower right portion of the back side of the substrate 12.

[0286] The Y-direction length of the second driving contact back surface portion 60f is equal to the Y-direction length of the second common contact back surface portion 30f. The X-direction length of the second driving contact back surface portion 60f is slightly larger than the Y-direction length of the first driving contact back surface portion 60e. Here, if the difference between the Y-direction length of the second driving contact back surface portion 60f and the Y-direction length of the second common contact back surface portion 30f is, for example, within 5% of the Y-direction length of the second common contact back surface portion 30f, it can be said that the Y-direction length of the second driving contact back surface portion 60f is equal to the Y-direction length of the second common contact back surface portion 30f.

[0287] like Figure 16 As shown, the right edge of the component contact back surface 50b, the right edge of the first drive contact back surface 60e, and the right edge of the second drive contact back surface 60f are aligned with each other.

[0288] The control contact back surface 70b is formed in the lower left portion of the substrate back surface 12. The control contact back surface 70b is formed in the substrate back surface 12 on the opposite side to the control contact front surface 70a. Here, in this embodiment, the Y direction, which is the arrangement direction of the element conductive portion 50B and the drive conductive portion 60B, can be referred to as the third direction, and the X direction, which is orthogonal to the Y direction when viewed from the Z direction, can be referred to as the fourth direction. In this case, it can be said that the second drive contact back surface portion 60f and the control contact back surface 70b are distributed on both sides of the fourth direction relative to the second common contact back surface portion 30f.

[0289] Like the control contact front 70a, the control contact back surface 70b is rectangular with its shorter side in the X direction and its longer side in the Y direction. The length of the control contact back surface 70b in the Y direction is equal to the length of the second common contact back surface portion 30f in the Y direction. The length of the control contact back surface 70b in the X direction is equal to the length of the second drive contact back surface portion 60f in the X direction. That is, the control contact back surface 70b and the second drive contact back surface portion 60f have the same shape.

[0290] like Figure 16As shown, the second common contact back surface portion 30f, the second drive contact back surface portion 60f, and the control contact back surface portion 70b are arranged spaced apart in the X direction with alignment in the Y direction. The lower edge of the second drive contact back surface portion 60f, the lower edge of the second common contact back surface portion 30f, and the lower edge of the control contact back surface portion 70b are aligned with each other. The upper edge of the second drive contact back surface portion 60f, the upper edge of the second common contact back surface portion 30f, and the upper edge of the control contact back surface portion 70b are aligned with each other. In this way, the second drive contact back surface portion 60f and the control contact back surface portion 70b are arranged symmetrically with respect to the second common contact back surface portion 30f.

[0291] In addition, such as Figure 16 As shown, the width of the insulating portion 13 between adjacent contact back surfaces 30b, 50b, 60b, and 70b in the X or Y direction is equal to that of each other. Furthermore, the X-direction length of the insulating portion 13 between the first common contact back surface 30e and the element contact back surface 50b and the first drive contact back surface 60e in the X direction is equal to the Y-direction length of the insulating portion 13 between the element contact back surface 50b and the first drive contact back surface 60e in the Y direction. Additionally, the X-direction length of the insulating portion 13 between the second common contact back surface 30f and the second drive contact back surface 60f in the X direction is equal to the X-direction length of the insulating portion 13 between the second common contact back surface 30f and the control contact back surface 70b in the X direction.

[0292] Here, if the difference between the width dimension of the specified insulating portion 13 and the width dimension of other insulating portions 13 is, for example, within 10% of the specified width dimension of the insulating portion 13, then it can be said that the width dimensions of these insulating portions 13 are equal to each other.

[0293] Next, the positional relationships of the multiple conductive parts 30B, 50B, 60B, 70B, semiconductor light-emitting element 80, and electronic component 100 will be described in detail.

[0294] like Figure 14As shown, the semiconductor light-emitting element 80 and the electronic component 100 are mounted on the common conductive portion 30B in the same manner as in the first embodiment, and are electrically connected via the common conductive portion 30B. In this embodiment, the semiconductor light-emitting element 80 is larger than the electronic component 100 when viewed from the Z direction. Specifically, the semiconductor light-emitting element 80 is formed into a rectangle when viewed from the Z direction, with its long side along the X direction and its short side along the Y direction. The electronic component 100 is formed into a rectangle when viewed from the Z direction, with its long side along the Y direction and its short side along the X direction. The dimension of the semiconductor light-emitting element 80 in the X direction is larger than the dimension of the electronic component 100 in the X direction, and the dimension of the semiconductor light-emitting element 80 in the Y direction is larger than the dimension of the electronic component 100 in the Y direction.

[0295] In this embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are disposed on a common contact front surface 30a. More specifically, the semiconductor light-emitting element 80 is disposed on a first common contact front surface portion 30c, and the electronic component 100 is disposed on a second common contact front surface portion 30d. Thus, a semiconductor light-emitting element 80 larger than the electronic component 100 is disposed on a first common contact front surface portion 30c, which is larger than the second common contact front surface portion 30d. Therefore, sufficient space can be provided for the respective placement of the semiconductor light-emitting element 80 and the electronic component 100. Furthermore, since the length in the X direction of the first common contact front surface portion 30c is greater than the length in the X direction of the semiconductor light-emitting element 80, it is also possible to configure a semiconductor light-emitting element 80 with a size larger than the illustrated semiconductor light-emitting element 80. Therefore, the versatility of the semiconductor light-emitting device 1B can be improved.

[0296] In addition, in this embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are arranged at intervals in the Y direction on the common contact front surface 30a, which is different from the first embodiment. They are offset in the X direction.

[0297] In this embodiment, the semiconductor light-emitting element 80 is disposed closer to the third sidewall portion 21c than the electronic component 100, and the electronic component 100 is disposed closer to the fourth sidewall portion 21d than the semiconductor light-emitting element 80. Therefore, it can be said that the electronic component 100 is arranged in the Y direction relative to the semiconductor light-emitting element 80, offset towards the fourth sidewall portion 21d in the X direction. The semiconductor light-emitting element 80 is disposed at a position offset from the center portion in the X direction of the substrate front surface 11, for example, disposed on the side of the third sidewall portion 21c relative to the center portion. The electronic component 100 is disposed at the center portion in the X direction of the substrate front surface 11. Furthermore, in this embodiment, when viewed from the Y direction, the semiconductor light-emitting element 80 and the electronic component 100 overlap.

[0298] The semiconductor light-emitting element 80 is disposed in the X direction relative to the third sidewall portion 21c of the first common contact surface portion 30c. In the illustrated example, the semiconductor light-emitting element 80 is disposed on the side of the fourth sidewall portion 21d, which is closer to the recess 35e of the first common contact surface portion 30c. Viewed in the Y direction, the end of the semiconductor light-emitting element 80 on the third sidewall portion 21c side overlaps with the end of the control contact surface 70a on the fourth sidewall portion 21d side. Furthermore, the semiconductor light-emitting element 80 is positioned in the Z direction relative to the recess 35f formed in the common conductive portion 30B (see reference). Figure 19 The configuration is non-overlapping. In this embodiment, as shown... Figure 19 As shown, the semiconductor light-emitting element 80 is positioned opposite the recess 35f to the electronic component 100. This structure helps to suppress the reduction in heat dissipation of the semiconductor light-emitting element 80.

[0299] A portion of the electronic component 100, viewed from the Y direction, overlaps with the first common contact front surface portion 30c. Additionally, a portion of the electronic component 100, viewed from the Y direction, overlaps with the first drive contact front surface portion 60c. Furthermore, the electronic component 100 is arranged such that it does not overlap with the recess 35f, viewed from the Z direction. In this embodiment, as... Figure 19 As shown, the electronic component 100 is positioned opposite the recess 35f to the semiconductor light-emitting element 80. This structure helps to suppress the reduction in heat dissipation of the electronic component 100.

[0300] Since the semiconductor light-emitting element 80 is disposed on the first common contact front surface portion 30c and the electronic component 100 is disposed on the second common contact front surface portion 30d, the semiconductor light-emitting element 80 is disposed closer to the first sidewall portion 21a than the electronic component 100, and the electronic component 100 is disposed closer to the second sidewall portion 21b than the semiconductor light-emitting element 80. The semiconductor light-emitting element 80 and the electronic component 100 are disposed at a position offset from the center of the substrate front surface 11 in the Y direction. In the illustrated example, the semiconductor light-emitting element 80 is disposed between the center of the substrate front surface 11 and the first sidewall portion 21a on the first common contact front surface portion 30c, and in this example, it is disposed further away from the center of the substrate front surface 11 in the Y direction than the first sidewall portion 21a. In other words, the semiconductor light-emitting element 80 is disposed in the first common contact front surface portion 30c that is offset from the second common contact front surface portion 30d in the Y direction. Here, "biased towards the second common contact front surface 30d in the Y direction" in the first common contact front surface 30c means that the end of the first common contact front surface 30c that is biased towards the second common contact front surface 30d is biased towards the second common contact front surface 30d. The electronic component 100 is disposed between the central portion of the substrate front surface 11 and the second sidewall portion 21b on the second common contact front surface 30d, and in this example, it is disposed more biased towards the central portion of the substrate front surface 11 in the Y direction than the second sidewall portion 21b. In other words, the electronic component 100 is disposed in the second common contact front surface 30d that is biased towards the first common contact front surface 30c in the Y direction. In this way, the semiconductor light-emitting element 80 and the electronic component 100 are disposed on both sides of the central portion in the Y direction of the substrate front surface 11, and the distance between them in the Y direction is shortened.

[0301] At least a portion of the semiconductor light-emitting element 80 is disposed in the first common contact front surface portion 30c, closer to the electronic component 100 than the element contact front surface 50a. In this embodiment, the semiconductor light-emitting element 80 is disposed in the Y direction relative to the element contact front surface 50a, biased towards the second sidewall portion 21b. More specifically, the semiconductor light-emitting element 80 is disposed in the Y direction relative to the central portion of the element contact front surface 50a, biased towards the second sidewall portion 21b. A portion of the semiconductor light-emitting element 80 is disposed in the Y direction relative to the element contact front surface 50a, biased towards the second sidewall portion 21b. Viewed from the X direction, the semiconductor light-emitting element 80 overlaps with the element contact front surface 50a and the first driving contact front surface portion 60c. More specifically, in this embodiment, the central portion of the semiconductor light-emitting element 80 in the Y direction is biased towards the first driving contact front surface portion 60c relative to the insulating portion 13 between the element contact front surface 50a and the first driving contact front surface portion 60c.

[0302] like Figure 17As shown, the lower surface electrode 92 of the semiconductor light-emitting element 80 is soldered to the first common contact front portion 30c by a conductive bonding material P1, similar to the first embodiment. Thus, the lower surface electrode 92 is bonded to the common conductive portion 30B.

[0303] like Figure 18 As shown, the second driving electrode 103 of the electronic component 100 is similarly soldered to the second common contact front surface portion 30d by a conductive bonding material P2, as in the first embodiment. Thus, the second driving electrode 103 is bonded to the common conductive portion 30B. The lower surface electrode 92 of the component and the second driving electrode 103 are electrically connected through the common conductive portion 30B. In this embodiment, the conductive bonding material P2 is formed of Ag paste, and the Ag paste has a high Ag content. This improves heat dissipation from the electronic component 100 to the common conductive portion 30B.

[0304] like Figure 15 As shown, the upper surface electrode 91 of the semiconductor light-emitting element 80 is connected to the element contact front surface 50a via a plurality of wires W1, similar to the first embodiment. In other words, the plurality of wires W1 are soldered to the respective wires of the upper surface electrode 91 and the element contact front surface 50a. Thus, the upper surface electrode 91 is electrically connected to the element conductive portion 50B. The number of wires W1 is not particularly limited; in the illustrated example, five wires W1 are provided. Furthermore, in the illustrated example, the first solder joint of the wires W1 is provided on the upper surface electrode 91, and the second solder joint is provided on the element contact front surface 50a. The first solder joints of the five wires W1 are arranged spaced apart from each other in the Y direction in the upper surface electrode 91, and the second solder joints are arranged spaced apart from each other in the Y direction in the element contact front surface 50a. The second solder joint is located at the end of the third sidewall portion 21c side of the two ends in the X direction of the element contact front surface 50a. The second welding portion is disposed in the Y direction near the second sidewall portion 21b of the recess 55 on the component contact front 50a, and in the X direction is disposed such that it does not protrude toward the fourth sidewall portion 21d of the recess 55. In the illustrated example, the second welding portion is disposed near the third sidewall portion 21c of the center portion of the recess 55 in the X direction, and is disposed such that it overlaps with the recess 55 when viewed from the Y direction.

[0305] like Figure 14 and Figure 15As shown, the first and second solder joints of the five wires W1 are arranged spaced apart from each other in the X direction, offset in the Y direction. In the illustrated example, viewed from the X direction, the first solder joint on the side of the first sidewall 21a of the five first solder joints overlaps with the second solder joint on the side of the second sidewall 21b of the five second solder joints. Therefore, in top view, the wires W1 extend obliquely from the upper surface electrode 91 of the component away from the electronic component 100 as they move towards the contact front surface 50a of the component. In other words, in the top view, the wires W1 extend obliquely towards the first sidewall 21a as they move from the first solder joint towards the second solder joint. In the top view, the multiple wires W1 are formed parallel to each other.

[0306] In the illustrated example, the upper surface electrode 91 is formed at one of the two ends of the upper surface 80a of the component in the X direction, closer to the conductive portion 50B of the component. Therefore, the length of the wire W1 can be shortened.

[0307] The first driving electrode 101 of the electronic component 100 is connected to the driving contact front surface 60a via a plurality of wires W2, similar to the first embodiment. In other words, the plurality of wires W2 are soldered to the respective wires of the first driving electrode 101 and the driving contact front surface 60a. Thus, the first driving electrode 101 is electrically connected to the driving conductive part 60B. The number of wires W2 is not particularly limited; in the illustrated example, six wires W2 are provided. Furthermore, in the illustrated example, the first solder joint of the wires W2 is provided on the first driving electrode 101, and the second solder joint is provided on the driving contact front surface 60a. The second solder joints of the six wires W2 are arranged at intervals from each other in the Y direction.

[0308] The wire W2 is connected to the second drive contact front surface 60d. In other words, the second soldering part is provided on the second drive contact front surface 60d. More specifically, the second soldering part is disposed in the Y direction closer to the second sidewall portion 21b than the recess 65 of the drive contact front surface 60a. In addition, the second soldering part is disposed in the X direction closer to the second common contact front surface 30d (third sidewall portion 21c) than the central portion of the second drive contact front surface 60d.

[0309] The two furthest wires among the plurality of wires W2, i.e., the wires W2 arranged at both ends in the Y direction, are connected to the first driving electrode 101 and the second driving contact front surface 60d in a manner that, in the top view, they are further away from the first driving electrode 101 side than the second driving contact front surface 60d side. In other words, the spacing of the wires W2 arranged at both ends in the Y direction on the second driving contact front surface 60d side is larger than the spacing on the first driving electrode 101 side. In this embodiment, in the top view, the plurality of wires W2 are formed such that the gap between adjacent wires W2 gradually increases as they move from the first solder joint to the second solder joint. In one example, the distance between the second solder joints of the wires W2 at both ends in the Y direction is greater than the length of the electronic component 100 in the Y direction.

[0310] In the illustrated example, the length of wire W2 is longer than the length of wire W1. Furthermore, the diameter of wire W2 is larger than the diameter of wire W1. Additionally, the number of wires W2 is greater than the number of wires W1. Based on this structure, the heat dissipation of the electronic component 100 can be improved. However, this is not a limitation; the diameter of wire W2 can be smaller than the diameter of wire W1. Furthermore, the number of wires W2 can be the same as the number of wires W1, or the number of wires W2 can be less than the number of wires W1.

[0311] The control electrode 102 of the electronic component 100 is connected to the control contact front surface 70a via a wire W3, similar to the first embodiment. In other words, the wire W3 is soldered to the respective wires of the control electrode 102 and the control contact front surface 70a. The number of wires W3 is not particularly limited; in the illustrated example, there is one. Furthermore, in the illustrated example, the first soldering portion of the wire W3 is provided on the control electrode 102, and the second soldering portion is provided on the control contact front surface 70a. In this embodiment, the control electrode 102 is formed at one end of the upper surface 100a in the X direction, closer to the control contact front surface 70a. Therefore, the length of the wire W3 can be shortened.

[0312] The electronic component 100 is covered by a sealing resin 140. The sealing resin 140 is covered by a coating agent 141 for inhibiting the curing of the first driving electrode 101 and the second driving electrode 103 of the electronic component 100. Additionally, the sealing resin 140 and the coating agent 141 respectively cover the first solder joints of the plurality of wires W2 connected to the first driving electrode 101 and the first solder joints of the wires W3 connected to the control electrode 102. The sealing resin 140 is formed, for example, of a light-shielding resin material; in this embodiment, epoxy resin is used. Therefore, the sealing resin 140 can also be described as a light-shielding resin (light-shielding component) that shields the electronic component 100 from the outside. The coating agent 141 is, for example, a coating agent formed from fluoropolymers and glass-like materials.

[0313] like Figure 14 and Figure 15 As shown, the coating agent 141 (sealing resin 140) protrudes from the second common contact front surface 30d. A portion of the coating agent 141 (sealing resin 140) covers the first common contact front surface 30c and the first driving contact front surface 60c. The coating agent 141 (sealing resin 140) is disposed spaced apart from the semiconductor light-emitting element 80. Furthermore, the electronic component 100 may also be configured such that the coating agent 141 is further covered by the sealing resin 140 while it is already covered by the coating agent 141.

[0314] In this embodiment, a capacitor 120 is arranged across the element contact front surface 50a and the first drive contact front surface portion 60c. An example of the capacitor 120 is a tantalum capacitor. Alternatively, a multilayer ceramic capacitor can also be used as the capacitor 120. The capacitor 120 is positioned in the X direction closer to the fourth sidewall portion 21d than the recess 55 of the element contact front surface 50a. Since the recess 55 is the mark of the connection end of the element contact front surface 50a in the wire W1, i.e., the second solder portion, the capacitor 120 can be said to be positioned closer to the fourth sidewall portion 21d than the second solder portion. Furthermore, the capacitor 120 is arranged such that it does not protrude further towards the fourth sidewall portion 21d than the recess 65 of the drive contact front surface 60a in the X direction. The capacitor 120 is arranged with the first electrode 121 and the second electrode 122 arranged in the Y direction. In other words, as... Figure 14 and Figure 15 As shown, the capacitor 120 is arranged with its long side in the Y direction and its short side in the X direction. In this embodiment, the first electrode 121 is connected to the component contact front surface 50a, and the second electrode 122 is connected to the first drive contact front surface portion 60c. That is, the portion of the wire W2 connected to the second drive contact front surface portion 60d, i.e., the second solder portion, is separated from the second electrode 122 by the recess 65.

[0315] like Figure 14 and Figure 15As shown, the second electrode 122 of the capacitor 120 is chip-bonded to the first driving contact front surface 60c by a conductive bonding material P3, such as a paste or solder containing a metal like Ag. Similarly, the first electrode 121 of the capacitor 120 is chip-bonded to the element contact front surface 50a by the conductive bonding material P3. As described above, the second bonding portion of the wire W2 and the second electrode 122 are separated by the recess 65, thus preventing adhesion to the second bonding portion of the wire W2 due to wetting of the conductive bonding material P3 connecting the second electrode 122 to the first driving contact front surface 60c. The portion of the conductive bonding material P3 that connects the element contact front surface 50a and the first electrode 121 protruding from the first electrode 121 is positioned in the X direction between the recess 55 and the capacitor 120. That is, the recess 55 functions to define the range of the conductive bonding material P3 protruding from the first electrode 121. Therefore, it is possible to manufacture a semiconductor light-emitting device 1B in which the conductive bonding material P3 does not contact the second bonding portion of the wire W1.

[0316] like Figure 19 As shown, the height TM from the front side 11 of the substrate to the upper surface 100a of the electronic component 100 is lower than the height TV from the front side 11 of the substrate to the upper surface 80a of the semiconductor light-emitting element 80. In other words, the upper surface 100a of the electronic component 100 is located below the upper surface 80a of the semiconductor light-emitting element 80 (on the side of the front side 11 of the substrate). Furthermore, in Figure 19 For ease of explanation, the sealing resin 140 and coating agent 141, which will be described later, are omitted from the text. Additionally, as... Figure 18 As shown, the height TC from the front side 11 of the substrate to the upper surface of the capacitor 120 is greater than the height TV from the front side 11 of the substrate to the upper surface 80a of the semiconductor light-emitting element 80 (refer to...). Figure 19 The height TC is higher than the height TM from the front side of the substrate 11 to the upper surface 100a of the electronic component 100 (see reference). Figure 19 )high.

[0317] like Figures 24-26 As shown, the housing 20B has a storage space 23 for housing the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120. An opening 22a connects the storage space 23 to the outside of the housing 20B. Figure 23 As shown, the opening 22a is formed in the cover 22 in the X direction, closer to the third sidewall portion 21c than the center portion. Furthermore, the opening 22a is formed in the cover 22 in the Y direction, closer to the first sidewall portion 21a than the center portion. Figure 24 and Figure 25As shown, the thickness of the cover 22 varies in the Y direction. Specifically, the thickness of the first portion 22b, which is located at the same position in the Y direction as the opening 22a and is closer to the first sidewall 21a than the opening 22a, is thinner than the thickness of the second portion 22c, which is closer to the second sidewall 21b than the opening 22a. In other words, the second portion 22c of the cover 22 is thicker than the first portion 22b. Figure 26 As shown in the top view, the storage space 23 formed by the inner surfaces of each side wall portion 21a to 21d is approximately square in shape. Furthermore, the opening 22a is formed adjacent to the third side wall portion 21c.

[0318] like Figure 19 As shown, the semiconductor light-emitting element 80 is positioned corresponding to the first portion 22b of the cover 22, and the electronic component 100 is positioned corresponding to the second portion 22c of the cover 22. The second portion 22c of the cover 22 is formed such that it droops down from the second sidewall portion 21b side of the peripheral edge of the opening 22a, so even if light from the semiconductor light-emitting element 80 is reflected by the light diffuser plate 130, the reflected light is unlikely to reach the electronic component 100.

[0319] (Manufacturing method)

[0320] Next, use Figures 27-36 The manufacturing method of the semiconductor light-emitting device 1B will be described. Furthermore, Figure 28 , Figure 30 and Figure 32 The two-dotted quadrilateral represents the outline of substrate 10B.

[0321] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figures 27-29 As shown, the process includes preparing a lead frame 800. The lead frame 800 is a metal plate formed of Cu. The lead frame 800 is formed, for example, by etching the Cu plate. Conductive portions 830B, 850B, 860B, and 870B corresponding to a plurality of semiconductor light-emitting devices 1B are provided in the lead frame 800. Figure 28 The diagram shows conductive portions 830B, 850B, 860B, and 870B corresponding to the four semiconductor light-emitting devices 1B. These conductive portions 830B, 850B, 860B, and 870B are supported by a lead frame 800 via suspension leads 880. Furthermore, the shapes of the conductive portions 830B, 850B, 860B, and 870B are similar to those of the four semiconductor light-emitting devices 1B, except that the suspension leads 880 are not cut. Figure 14The multiple conductive portions 30B, 50B, 60B, and 70B shown have the same shape. That is, the common conductive portion 830B corresponds to the common conductive portion 30B, the element conductive portion 850B corresponds to the element conductive portion 50B, the driving conductive portion 860B corresponds to the driving conductive portion 60B, and the control conductive portion 870B corresponds to the control conductive portion 70B. Flanges are formed on the multiple conductive portions 830B, 850B, 860B, and 870B, for example, in a cross-sectional view cut along the Z-direction by etching. In one example, as... Figure 29 As shown, a flange 836 is provided in the common conductive part 830B, and a flange 866 is provided in the driving conductive part 860B. Figure 29 As shown, the suspension lead 880 extends from the flange 866 and has the same thickness as the flange 866.

[0322] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figure 30 and Figure 31 As shown, the process includes molding the insulating portion 813 into the lead frame 800. The insulating portion 813 is formed of a resin material with electrical insulating properties. In this embodiment, epoxy resin can be used for the insulating portion 813. Figure 30 As shown in the shadow, the insulation portion 813 is embedded in a through-hole formed in the lead frame 800. (As indicated by the shadow) Figure 30 As shown, the insulating portion 813 is provided to surround each conductive portion 830B, 850B, 860B, and 870B. Thus, outside the suspension lead 880, the insulating portion 813 separates each conductive portion 830B, 850B, 860B, and 870B. Figure 31 As shown, the insulating portion 813 enters the back side of the flange 866 and the suspension lead 880, thereby forming a back-side semi-insulating portion 813L. Additionally, the insulating portion 813 enters the recesses of multiple conductive portions 830B, 850B, 860B, and 870B, thereby forming a front-side semi-insulating portion 813U. The recesses of the multiple conductive portions 830B, 850B, 860B, and 870B, and the recesses 35a to 35e, 55, and 65 of the multiple conductive portions 30B, 50B, 60B, and 70B (all refer to...) Figure 14 Corresponding to the front-side semi-insulating portion 813U of the substrate 10B (refer to...). Figure 14 )correspond.

[0323] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figure 32As shown, the process includes: mounting a semiconductor light-emitting element 80 onto a lead frame 800; and mounting an electronic component 100 onto the lead frame 800. Specifically, the semiconductor light-emitting element 80 chip is soldered to a common conductive portion 830B using a conductive bonding material P1, and the electronic component 100 chip is soldered to the common conductive portion 830B using a conductive bonding material P2. More specifically, firstly, conductive bonding material P1 is applied to the first common contact front surface 830c of the common conductive portion 830B, and conductive bonding material P2 is applied to the second common contact front surface 830d of the common conductive portion 830B. Ag paste is used as conductive bonding materials P1 and P2. Next, the semiconductor light-emitting element 80 is placed on the conductive bonding material P1, and the electronic component 100 is placed on the conductive bonding material P2. At this time, the lower surface electrode 92 of the semiconductor light-emitting element 80 (see reference) Figure 17 The first driving electrode 101 of the electronic component 100 (refer to the conductive bonding material P1) is in contact with the conductive bonding material P1. Figure 18 The semiconductor light-emitting element 80 is bonded to the first common contact front surface portion 830c via the conductive bonding material P1, for example, by reflow soldering, and the electronic component 100 is bonded to the second common contact front surface portion 830d via the conductive bonding material P2.

[0324] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figure 32 As shown, the process includes forming wires W1 to W3. In this embodiment, wire bonding apparatus is used to form wires W1 to W3 respectively. More specifically, after forming a first bonding portion on the upper surface electrode 91 of the semiconductor light-emitting element 80, the wire bonding apparatus moves to the conductive portion 850B to form a second bonding portion on the contact front surface 850a. This forms wire W1. The second bonding portion of wire W1 is formed in a manner that is approximately at the same position as the recess 855 formed in the X direction on the conductive portion 850B. That is, the recess 855 serves as a marker for the formation position of the second bonding portion of wire W1. After forming a first bonding portion on the first driving electrode 101 of the electronic component 100, the wire bonding apparatus moves to the driving conductive portion 860B to form a second bonding portion on the second driving contact front surface 860d. This forms wire W2. After forming a first bonding portion on the control electrode 102 of the electronic component 100, the wire bonding apparatus moves to the control conductive portion 870B to form a second bonding portion on the control contact front surface 870a. This forms wire W3. Furthermore, the formation order of conductors W1 to W3 is arbitrary. Additionally, the component contact front surface 850a and the component contact front surface 50a of the substrate 10B (see reference) Figure 14 Correspondingly, the second driving contact front surface 860d and the second driving contact front surface 60d of the substrate 10B (refer to...) Figure 14Correspondingly, the control contact front surface 870a and the control contact front surface 70a of the substrate 10B (refer to...) Figure 14 )correspond.

[0325] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figure 33 As shown, this includes the process of forming substrate 10B. Specifically, for example, using a cutting blade along... Figure 32 The two-dot dashed line cuts through the insulation portion 813 and the suspension lead 880 of the lead frame 800. In this embodiment, the cutting blade moves from the front side 801 to the back side 802 of the lead frame 800 (both refer to...). Figure 31 The cutting is performed. Protrusions 34a-34f, 54a-54c, 64a-64c, 74a, and 74b are formed accordingly. At this time, the suspension lead 880 is provided on the side closer to the front side 801 than the back side 802. An insulating part 813 is provided on the back side 802 side of the suspension lead 880. Therefore, even if burrs are generated when the suspension lead 880 is cut with a cutting blade, the burrs are unlikely to protrude to the back side 802 side.

[0326] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figure 34 The process shown includes mounting capacitor 120. Specifically, capacitor 120 chips are soldered across component conductive portion 50B and drive conductive portion 60B using conductive bonding material P3. More specifically, firstly, conductive bonding material P3 is applied to the component contact front surface 50a of component conductive portion 50B and the first drive contact front surface 60c of drive conductive portion 60B. Ag paste is used as the conductive bonding material P3, for example. Next, capacitor 120 is placed on conductive bonding material P3. At this time, the first electrode 121 of capacitor 120 contacts the conductive bonding material P3 of component conductive portion 50B, and the second electrode 122 contacts the conductive bonding material P3 of drive conductive portion 60B. Furthermore, capacitor 120 is bonded to component contact front surface 50a and first drive contact front surface 60c via conductive bonding material P3, for example, through a reflow soldering process. At this time, the conductive bonding material P3 is coated and the capacitor 120 is placed in such a way that the portion of the conductive bonding material P3 protruding from the first electrode 121 is located between the recess 55 and the first electrode 121.

[0327] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figure 35As shown, the process includes covering the electronic component 100 with a sealing resin 140 and a coating agent 141. In this embodiment, after applying the sealing resin 140 to cover the electronic component 100 and the first solder joints of the wires W2 and W3, the sealing resin 140 is cured by heating or ultraviolet irradiation. Next, the coating agent 141 is applied to cover the sealing resin 140. As the sealing resin 140, a light-shielding resin material is used; in this embodiment, epoxy resin is used. As the coating agent 141, a coating agent formed from a fluoropolymer and a glass-like material is used.

[0328] The manufacturing method of semiconductor light-emitting device 1B is as follows: Figure 36 As shown, the process includes mounting a housing 20B, on which a light diffuser plate 130 is mounted, onto a substrate 10B. In this embodiment, a light-shielding adhesive P4 is applied to the end faces of each sidewall portion 21a to 21d of the housing 20B, and the housing 20B is mounted on the substrate front surface 11 of the substrate 10B. An electrically insulating material is used as the adhesive P4. In this embodiment, an adhesive with black epoxy resin as its main component is used as the adhesive P4. After the above processes, a semiconductor light-emitting device 1B can be manufactured.

[0329] (Electronic devices that use semiconductor light-emitting devices)

[0330] Figure 37 and Figure 38 This is a top view and circuit diagram showing an example of an electronic device 2B that uses a semiconductor light-emitting device 1B. The electronic device 2B may include, for example, a distance-measuring sensor.

[0331] The electronic device 2B includes a semiconductor light-emitting device 1B, a circuit substrate 110 on which the semiconductor light-emitting device 1B is mounted, and wiring patterns 111 to 114 formed on the circuit substrate 110. The configuration structure of the wiring patterns 111 to 114 is the same as that of the wiring patterns 111 to 114 in the first embodiment (see reference). Figure 9 and Figure 10 The configuration structure is the same.

[0332] A portion of the common conductive portion 30B is disposed at a position overlapping with the first wiring pattern 111. The first common contact back portion 30e is joined to the first wiring pattern 111 by solder or the like. Thus, the first wiring pattern 111 is electrically connected to the lower surface electrode 92 of the element, which serves as the cathode electrode of the semiconductor light-emitting element 80, and the second driving electrode 103, which serves as the drain electrode of the electronic component 100.

[0333] The conductive portion 50B of the component is positioned overlapping the second wiring pattern 112. The width of the second wiring pattern 112 in this embodiment is smaller than that in the first embodiment. The component contact back surface 50b is bonded to the second wiring pattern 112 using solder or the like. Thus, the second wiring pattern 112 is electrically connected to the upper surface electrode 91 of the component, which serves as the anode electrode of the semiconductor light-emitting element 80, and the first electrode 121 of the capacitor 120.

[0334] The driving conductive portion 60B is positioned overlapping the third wiring pattern 113. The width of the third wiring pattern 113 in this embodiment is larger than that in the first embodiment. The first driving contact back surface portion 60e and the second driving contact back surface portion 60f are bonded to the third wiring pattern 113 using solder or the like. Thus, the third wiring pattern 113 is electrically connected to the first driving electrode 101, which serves as the source electrode of the electronic component 100, and the second electrode 122 of the capacitor 120. Alternatively, the width of the third wiring pattern 113 may be the same as that of the third wiring pattern 113 in the first embodiment. In this case, the third wiring pattern 113 is bonded to the second driving contact back surface portion 60f using solder or the like. Furthermore, the third wiring pattern 113 may also be bonded to the first driving contact back surface portion 60e using solder or the like, instead of the second driving contact back surface portion 60f.

[0335] The control conductive part 70B is positioned overlapping the fourth wiring pattern 114. The control contact back surface 70b is bonded to the fourth wiring pattern 114 by solder or the like. Thus, the fourth wiring pattern 114 is electrically connected to the control electrode 102 of the electronic component 100.

[0336] As described above, in this embodiment, multiple contact back surfaces 30b, 50b, 60b, and 70b constitute the external terminals of the semiconductor light-emitting device 1B.

[0337] In the illustrated example, a portion of the first common contact back surface 30e and the second common contact back surface 30f are respectively mounted on the heat dissipation pattern 115 formed on the circuit substrate 110 using solder or the like. The width of the heat dissipation pattern 115 in this embodiment is smaller than the width of the heat dissipation pattern 115 in the first embodiment. The heat dissipation pattern 115 is not bonded to the component contact back surface 50b and the first drive contact back surface 60e. Therefore, heat from the semiconductor light-emitting element 80 and the electronic component 100 is transferred from each of the common contact back surfaces 30e and 30f to the circuit substrate 110. As a result, the heat dissipation performance of the semiconductor light-emitting device 1B can be improved.

[0338] In this embodiment, the semiconductor light-emitting device 1B incorporates a capacitor 120. Since the capacitor 120 is electrically connected to the third wiring pattern 113 and the fourth wiring pattern 114 as described above, therefore...Figure 38 As shown, the semiconductor light-emitting element 80 and electronic component 100 are connected in parallel.

[0339] In addition to the effects of (1-1) to (1-11) and (1-13) of the first embodiment, the semiconductor light-emitting device 1B according to this embodiment can also obtain the following effects.

[0340] (2-1) The common conductive part 30B, the element conductive part 50B, the driving conductive part 60B, and the control conductive part 70B are formed by lead frames and exposed on the front side 11 and the back side 12 of the substrate, respectively. According to this structure, since the common conductive part 30B, the element conductive part 50B, the driving conductive part 60B, and the control conductive part 70B are each relatively large, the heat dissipation of each of the common conductive part 30B, the element conductive part 50B, the driving conductive part 60B, and the control conductive part 70B can be improved.

[0341] (2-2) The common contact front surface 30a has a first common contact front surface portion 30c and a second common contact front surface portion 30d. The second common contact front surface portion 30d is disposed between the driving conductive portion 60B and the control conductive portion 70B, and extends further in the X direction towards the fourth sidewall portion 21d than the first common contact front surface portion 30c. The first common contact front surface portion 30c extends from the second common contact front surface portion 30d in the Y direction. The semiconductor light-emitting element 80 is disposed in the first common contact front surface portion 30c, biased against the second common contact front surface portion 30d. According to this structure, the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be shortened. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be reduced.

[0342] (2-3) The electronic component 100 is disposed biased against the first common contact front surface 30c within the second common contact front surface 30d. According to this structure, the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be further shortened. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 can be further reduced.

[0343] (2-4) The common contact front surface 30a is larger than the driving contact front surface 60a and the control contact front surface 70a. Based on this structure, the heat dissipation of the common conductive part 30B can be improved.

[0344] (2-5) Viewed from the X direction, a portion of the semiconductor light-emitting element 80 is disposed in the first common contact front surface portion 30c at a position closer to the electronic component 100 than the element contact front surface 50a. The element upper surface electrode 91 of the semiconductor light-emitting element 80 is connected to the element contact front surface 50a by a plurality of wires W1, which extend obliquely away from the electronic component 100 as they move from the element upper surface electrode 91 toward the element contact front surface 50a. According to this structure, by using the plurality of wires W1, even if the semiconductor light-emitting element 80 and the element contact front surface 50a are disposed offset in the Y direction, an electrical connection between the element upper surface electrode 91 and the element conductive portion 50B can be easily achieved.

[0345] (2-6) The driving contact front surface 60a has a first driving contact front surface portion 60c and a second driving contact front surface portion 60d. The first driving contact front surface portion 60c extends in the X direction, and the second driving contact front surface portion 60d extends in the Y direction. According to this structure, the second electrode 122 of the capacitor 120 can be easily connected to the first driving contact front surface portion 60c, and the plurality of wires W2 can be easily connected to the second driving contact front surface portion 60d.

[0346] Furthermore, the driving contact front surface 60a has a recessed region 60r that is recessed relative to the first driving contact front surface 60c, such that the second driving contact front surface portion 60d is shorter in the X direction than the first driving contact front surface portion 60c. The second common contact front surface portion 30d enters the recessed region 60r. According to this structure, since the length of the second common contact front surface portion 30d in the X direction can be obtained more significantly, the heat dissipation of the electronic component 100 can be improved.

[0347] (2-7) In the top view, multiple wires W2 are arranged in the Y direction. According to this structure, since the second drive contact front portion 60d extends in the Y direction, space can be ensured for forming the respective second weld portions of the multiple wires W2. Therefore, the respective second weld portions of the multiple wires W2 can be easily formed.

[0348] (2-8) When the distance between the two wires W2 that constitute the farthest combination among the plurality of wires W2 increases, the inductance between the first driving electrode 101 and the second driving contact front surface 60d can be reduced. According to this semiconductor light-emitting device 1B, in a top view, the spacing between the farthest wires W2 in the Y direction among the plurality of wires W2 expands from the first driving electrode 101 of the electronic component 100 towards the second driving contact front surface 60d. Therefore, since a larger distance can be obtained between the two wires W2 that constitute the farthest combination among the plurality of wires W2, the inductance between the first driving electrode 101 and the second driving contact front surface 60d can be reduced.

[0349] (2-9) The first common contact back surface 30e is larger than the element contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b. Based on this structure, the heat dissipation of the semiconductor light-emitting element 80 can be improved.

[0350] (2-10) The first common contact back surface portion 30e is larger than the second common contact back surface portion 30f. Based on this structure, the heat dissipation performance of the semiconductor light-emitting element 80 can be improved.

[0351] (2-11) The first common contact front portion 30c extends from the second common contact front portion 30d toward the third sidewall portion 21c in the X direction. According to this structure, since the length of the first common contact front portion 30c in the X direction can be obtained in a larger way, the heat dissipation of the semiconductor light-emitting element 80 can be improved.

[0352] (2-12) A recess 35a, a pair of recesses 35b, a pair of recesses 35c, a recess 35d, and a recess 35e are provided in the common conductive portion 30B. The insulating portion 13 enters each of these recesses 35a to 35e. According to this structure, the insulating portion 13 and the common conductive portion 30B are not easily separated. Moreover, the recesses 35a to 35e are respectively provided on the common contact front surface 30a, and the front-side half-insulating portion 13U, which does not penetrate in the Z direction, enters into the recesses 35a to 35e. According to this structure, the front-side half-insulating portion 13U entering the recesses 35a to 35e overlaps with the common contact back surface 30b when viewed from the Z direction, thus restricting the movement of the common conductive portion 30B relative to the insulating portion 13 towards the housing 20B in the Z direction.

[0353] (2-13) A recess 55 is provided in the conductive portion 50B of the component. The insulating portion 13 enters the recess 55. According to this structure, the insulating portion 13 and the conductive portion 50B of the component are not easily separated. Moreover, the recess 55 is provided on the front contact surface 50a of the component, and the front-side half-insulating portion 13U, which does not penetrate in the Z direction, enters the recess 55. According to this structure, since the front-side half-insulating portion 13U entering the recess 55 overlaps with the back contact surface 50b of the component when viewed in the Z direction, the movement of the conductive portion 50B of the component relative to the insulating portion 13 in the Z direction toward the housing 20B side can be restricted.

[0354] (2-14) A recess 65 is provided in the drive conductive part 60B. The insulating part 13 enters the recess 65. According to this structure, the insulating part 13 and the drive conductive part 60B are not easily separated. Moreover, the recess 65 is provided on the drive contact front surface 60a, and the front side half-insulating part 13U, which does not penetrate in the Z direction, enters the recess 65. According to this structure, since the front side half-insulating part 13U entering the recess 65 overlaps with the drive contact back surface 60b when viewed in the Z direction, the movement of the drive conductive part 60B relative to the insulating part 13 in the Z direction toward the housing 20B side can be restricted.

[0355] (2-15) A recess 65 is provided between the first driving contact front surface portion 60c and the second driving contact front surface portion 60d. According to this structure, the conductive bonding material P3 used to connect the capacitor 120 to the first driving contact front surface portion 60c is less likely to enter the second driving contact front surface portion 60d side. Therefore, the conductive bonding material P3 and the second solder joint of the wire W2 are less likely to make contact.

[0356] (2-16) A recess 35f is provided between the first common contact back surface portion 30e and the second common contact back surface portion 30f. A back-side semi-insulating portion 13L enters the recess 35f. The back-side semi-insulating portion 13L of the recess 35f penetrates the common contact back surface portion 30b in the X direction and is connected to the insulating portions 13 provided on the left and right sides of the common contact back surface portion 30b that penetrate the substrate 10B. According to this structure, since the insulating portions 13 provided on the left and right sides of the common contact back surface portion 30b are integrated through the back-side semi-insulating portion 13L of the recess 35f, the strength of the insulating portions 13 around the common conductive portion 30B is increased. Moreover, the back-side semi-insulating portion 13L of the recess 35f supports the common conductive portion 30B in the Z direction, and the contact area between the insulating portions 13 and the common conductive portion 30B is increased due to the back-side semi-insulating portion 13L of the recess 35f. Therefore, the common conductive portion 30B is less likely to move towards the substrate back surface portion 12 in the Z direction.

[0357] (2-17) A recess 65a is provided between the first drive contact back surface portion 60e and the second drive contact back surface portion 60f. A back-side semi-insulating portion 13L enters the recess 65a. The back-side semi-insulating portion 13L of the recess 65a penetrates the drive contact back surface portion 60b in the X direction and is connected to the insulating portions 13 provided on the left and right sides of the drive contact back surface portion 60b that penetrate the substrate 10B. According to this structure, the insulating portions 13 provided on the left and right sides of the drive contact back surface portion 60b are integrated through the back-side semi-insulating portion 13L of the recess 65a, thus increasing the strength of the insulating portions 13 around the drive conductive portion 60B. Moreover, the back-side semi-insulating portion 13L of the recess 65a supports the drive conductive portion 60B in the Z direction, and the contact area between the insulating portion 13 and the drive conductive portion 60B is increased due to the back-side semi-insulating portion 13L of the recess 65a. Therefore, the drive conductive portion 60B is less likely to move towards the substrate back surface portion 12 in the Z direction.

[0358] (2-18) Flanges 36, 56, 66, and 76 are provided on the common conductive part 30B, the element conductive part 50B, the drive conductive part 60B, and the control conductive part 70B, respectively. An insulating part 13 (the back-side semi-insulating part 13L) extends between these flanges 36, 56, 66, and 76 and the back surface of the substrate 12. According to this structure, the movement of the common conductive part 30B, the element conductive part 50B, the drive conductive part 60B, and the control conductive part 70B relative to the insulating part 13 in the Z-direction toward the side opposite to the housing 20B can be restricted.

[0359] (2-19) The electronic component 100 is covered by a light-shielding resin material (sealing resin 140). According to this structure, even if light from the semiconductor light-emitting element 80 is reflected by the light diffuser plate 130 and the like and shines on the electronic component 100, the reflected light cannot reach the electronic component 100 through the sealing resin 140, thus suppressing malfunction of the electronic component 100.

[0360] (2-20) The conductive bonding material P2, which serves as the Ag paste connecting the electronic component 100 and the common conductive part 30B, has a high Ag content. This allows for efficient heat dissipation from the electronic component 100 to the common conductive part 30B. On the other hand, the sulfur resistance of the conductive bonding material P2 is reduced. Therefore, in this embodiment, the sealing resin 140 is covered with a sulfur-inhibiting coating agent 141. Based on this structure, the sulfurization of the conductive bonding material P2, the second driving electrode 103, the control electrode 102, and the first driving electrode 101 can be suppressed. Therefore, the sulfur resistance of the conductive bonding material P2, the second driving electrode 103, the control electrode 102, and the first driving electrode 101 can be improved.

[0361] (2-21) The semiconductor light-emitting device 1B has a capacitor 120. According to this structure, since it is not necessary to arrange the capacitor 120 outside the semiconductor light-emitting device 1B, or since the number of capacitors 120 arranged outside the semiconductor light-emitting device 1B can be reduced, space saving of the electronic device 2B can be achieved.

[0362] (2-22) The semiconductor light-emitting element 80 is disposed offset from the electronic component 100 in the X direction toward the third sidewall portion 21c. The capacitor 120 is disposed relative to the semiconductor light-emitting element 80 in the X direction on the fourth sidewall portion 21d side. The electronic component 100 is disposed at the center of the substrate 10B in the X direction. The capacitor 120 is disposed in the Y direction on the side closer to the first sidewall portion 21a than the electronic component 100. According to this structure, one of the wires W2 and W3 will not become very long compared to the other, and space for disposing of the capacitor 120 can be ensured within the storage space 23 formed by the housing 20B and the substrate 10B.

[0363] (2-23) An opening 22a is provided in the cover 22 of the housing 20B made of a light-shielding material, at the portion opposite to the semiconductor light-emitting element 80 in the Z direction. The light diffuser plate 130 is mounted on the cover 22 to cover the opening 22a. With this structure, since the portion of the cover 22 other than the portion opposite to the semiconductor light-emitting element 80 in the Z direction is shielded from light, the irradiation of light onto the electronic component 100 can be suppressed. Therefore, malfunctions of the electronic component 100 caused by irradiated light can be suppressed.

[0364] (2-24) Protrusions 34a to 34f are provided in the common conductive portion 30B. According to this structure, since the volume of the common conductive portion 30B is increased, the heat dissipation of the semiconductor light-emitting element 80 and the electronic component 100 can be improved.

[0365] (2-25) Protrusions 54a and 54c are provided in the conductive portion 50B of the element. With this structure, the volume of the conductive portion 50B increases, thereby improving the heat dissipation of the semiconductor light-emitting device 1B. Additionally, protrusions 64a and 64c are provided in the driving conductive portion 60B. With this structure, the volume of the driving conductive portion 60B increases, thereby improving the heat dissipation of the semiconductor light-emitting device 1B. Furthermore, protrusions 74a and 74b are provided in the control conductive portion 70B. With this structure, the volume of the control conductive portion 70B increases, thereby improving the heat dissipation of the semiconductor light-emitting device 1B.

[0366] (2-26) The height TM of the electronic component 100 from the front side 11 of the substrate is lower than the height TV of the semiconductor light-emitting element 80 from the front side 11 of the substrate. According to this structure, even if light from the semiconductor light-emitting element 80 is reflected, for example, by the light diffuser 130, it is difficult to illuminate the electronic component 100. Therefore, malfunctions of the electronic component 100 caused by light illuminating the electronic component 100 can be suppressed.

[0367] [Example of Change]

[0368] The above embodiments are examples of ways in which the semiconductor light-emitting device of the present invention can be obtained, and are not intended to limit the scope of the invention. The semiconductor light-emitting device of the present invention can be obtained in ways different from those illustrated in the above embodiments. Examples include substitutions, modifications, or omissions of parts of the structure of the above embodiments, or the addition of new structures to the above embodiments. Furthermore, the following modifications can be combined with each other as long as there is no technical contradiction. In the following modifications, the parts common to the above embodiments are labeled with the same reference numerals as those in the above embodiments, and their descriptions are omitted.

[0369] In the first embodiment, such as Figures 39-42 As shown, the substrate 10 can be made of a conductive material such as Cu. In this configuration, insulating portions 150 are provided in the substrate 10 to divide it into multiple conductive portions 30, 50, 60, and 70. The insulating portions 150 are formed of an insulating material such as epoxy resin. The insulating portions 150 are formed in a layered manner, for example, having wide and narrow portions. The multiple conductive portions 30, 50, 60, and 70 are part of the substrate 10 divided in a state where they are insulated from each other by the insulating portions 150.

[0370] The connecting conductive part 40 is electrically connected to the common conductive part 30, but is insulated from other conductive parts 50, 60, and 70. Specifically, an insulating part 150 penetrating the substrate 10 in the thickness direction is provided between the connecting conductive part 40 and other conductive parts 50, 60, and 70. On the other hand, as Figure 40 and Figure 41 As shown, a semi-insulating portion 151 that does not penetrate the substrate 10 in the thickness direction is provided between the common conductive portion 30 and the connecting conductive portion 40. The semi-insulating portion 151 is formed on the back side 12 of the substrate, but not on the front side 11 of the substrate. Therefore, the common conductive portion 30 and the connecting conductive portion 40 are in contact.

[0371] As described above, in the configuration where multiple conductive portions 30, 40, 50, 60, and 70 are formed on a portion of the substrate 10, the common contact front surface 30a, the connecting contact front surface 40a, the component contact front surface 50a, the driving contact front surface 60a, and the control contact front surface 70a are formed by the substrate front surface 11. The common contact front surface 30a, the component contact front surface 50a, the driving contact front surface 60a, and the control contact front surface 70a are separated from each other by the insulating portion 150. The connecting contact front surface 40a is separated from the component contact front surface 50a, the driving contact front surface 60a, and the control contact front surface 70a. On the other hand, since the semi-insulating portion 151 is not formed on the substrate front surface 11, the common contact front surface 30a and the connecting contact front surface 40a are continuous.

[0372] Similarly, the common contact back surface 30b, the connecting contact back surface 40b, the component contact back surface 50b, the driving contact back surface 60b, and the control contact back surface 70b are formed by the substrate back surface 12. The common contact back surface 30b, the component contact back surface 50b, the driving contact back surface 60b, and the control contact back surface 70b are separated from each other by the insulating portion 150. The common contact back surface 30b, the connecting contact back surface 40b, the component contact back surface 50b, the driving contact back surface 60b, and the control contact back surface 70b are separated from each other by the insulating portion 150 and the semi-insulating portion 151.

[0373] Regarding the first embodiment Figures 39-42 In the modified example, protrusions and recesses may also be provided in the plurality of conductive parts 30, 40, 50, 60, and 70, as in the plurality of conductive parts 30B, 50B, 60B, and 70B of the second embodiment.

[0374] Figure 43 This is an example of a structure in which protrusions and recesses are provided in multiple conductive portions 30, 40, 50, 60, and 70. Furthermore, in Figure 43 In the diagram, for convenience, the outer surface of the frame 21 of the housing 20 is represented by a two-dot dashed line.

[0375] like Figure 43As shown, protrusions 34g to 34j are formed on the common contact surface 30a of the common conductive portion 30. Protrusions 34g and 34j are formed at the ends of the common contact surface 30a on the side of the first sidewall portion 21a. Protrusions 34g and 34h are spaced apart from each other in the X direction. Protrusion 34g is positioned closer to the element conductive portion 50 than protrusion 34h. Protrusions 34g and 34h protrude from the outer surface of the first sidewall portion 21a when viewed from the Z direction. Protrusions 34i and 34j are formed at the ends of the common contact surface 30a on the side of the second sidewall portion 21b. Protrusions 34i and 34j are spaced apart from each other in the X direction. Protrusion 34i is positioned closer to the drive conductive portion 60 than protrusion 34j. Protrusions 34i and 34j protrude from the outer surface of the second sidewall portion 21b when viewed from the Z direction. The protrusions 34g to 34j are the portions remaining after the suspension leads suspending the common conductive part 30 are cut in the lead frame. Furthermore, the number of these protrusions can be arbitrarily changed. Viewed from the Z-direction, the connection portions of the protrusions 34g to 34j and the common contact surface 30a each form curved surfaces.

[0376] Additionally, recesses 35g and 35h are formed on the common contact surface 30a. In the Y direction, recesses 35g and 35h are formed between the semiconductor light-emitting element 80 and the electronic component 100. Recess 35g is formed at the end of the common contact surface 30a on the side of the fourth sidewall portion 21d, and recess 35h is formed at the end of the common contact surface 30a on the side of the third sidewall portion 21c. Recess 35g is recessed in the X direction from the end 31c of the fourth sidewall portion 21d towards the third sidewall portion 21c. The bottom of recess 35g is formed by a curved surface. In the illustrated example, the shape of recess 35g in the top view is a concave curved surface with a portion extending in the X direction with a constant width dimension, and narrowing towards the bottom. Recess 35h is recessed in the X direction from the end 31a of the common contact surface 30a on the side of the third sidewall portion 21c towards the fourth sidewall portion 21d. In the illustrated example, the shape of the recess 35h in the top view is symmetrical to the shape of the recess 35g in the top view. The insulating part 150 enters the recesses 35g and 35h.

[0377] Protrusions 44a to 44c are formed on the connecting contact surface 40a of the connecting conductive part 40. Protrusion 44a is formed at the end of the connecting contact surface 40a on the side of the first sidewall portion 21a, and protrusions 44b and 44c are formed at the ends of the connecting contact surface 40a on the side of the third sidewall portion 21c. Protrusions 44b and 44c are spaced apart from each other in the Y direction. Protrusion 44b is formed closer to the first sidewall portion 21a than protrusion 44c. Protrusion 44a protrudes from the outer surface of the first sidewall portion 21a when viewed from the Z direction. Protrusions 44b and 44c protrude from the outer surface of the third sidewall portion 21c when viewed from the Z direction. Protrusions 44a to 44c are the remaining portions in the lead frame after the suspension lead suspending the connecting conductive part 40 has been cut. Furthermore, the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection portions of protrusions 44a to 44c with the connecting contact surface 40a are curved surfaces.

[0378] Protrusions 54d to 54f are formed on the component contact surface 50a of the component conductive portion 50. Protrusion 54d is formed at the end of the component contact surface 50a on the side of the first sidewall portion 21a, and protrusions 54e and 54f are formed at the end of the component contact surface 50a on the side of the fourth sidewall portion 21d. Protrusions 54e and 54f are spaced apart from each other in the Y direction. Protrusion 54e is formed closer to the first sidewall portion 21a than protrusion 54f. Protrusion 54d protrudes from the outer surface of the first sidewall portion 21a when viewed from the Z direction. Protrusions 54e and 54f protrude from the outer surface of the fourth sidewall portion 21d when viewed from the Z direction. Protrusions 54d to 54f are the remaining portions in the lead frame after the suspension lead of the suspended component conductive portion 50 has been cut. Furthermore, the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection portions of protrusions 54d to 54f with the component contact surface 50a are curved surfaces.

[0379] Protrusions 64d to 64f are formed on the drive contact front surface 60a of the drive conductive part 60. Protrusion 64d is formed at the end of the drive contact front surface 60a on the side of the second sidewall portion 21b, and protrusions 64e and 64f are formed at the end of the drive contact front surface 60a on the side of the fourth sidewall portion 21d. Protrusions 64e and 64f are spaced apart from each other in the Y direction. Protrusion 64e is formed on the side of the first sidewall portion 21a closer to the protrusion 64f. Protrusion 64d protrudes from the outer surface of the second sidewall portion 21b when viewed from the Z direction. Protrusions 64e and 64f protrude from the outer surface of the fourth sidewall portion 21d when viewed from the Z direction. Protrusions 64d to 64f are the remaining portions in the lead frame after the suspension lead suspending the drive conductive part 60 is cut. Furthermore, the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection portions of protrusions 64d to 64f with the drive contact front surface 60a are curved surfaces.

[0380] Protrusions 74d to 74f are formed on the control contact front surface 70a of the control conductive part 70. Protrusion 74d is formed at the end of the control contact front surface 70a on the side of the second sidewall portion 21b, and protrusions 74e and 74f are formed at the end of the control contact front surface 70a on the side of the third sidewall portion 21c. Protrusions 74e and 74f are spaced apart from each other in the Y direction. Protrusion 74e is formed on the side of the first sidewall portion 21a closer to the protrusion 74f. Protrusion 74d protrudes from the outer surface of the second sidewall portion 21b when viewed from the Z direction. Protrusions 74e and 74f protrude from the outer surface of the third sidewall portion 21c when viewed from the Z direction. Protrusions 74d to 74f are the remaining portions in the lead frame after the suspension lead suspending the control conductive part 70 is cut. Furthermore, the number of these protrusions can be arbitrarily changed. When viewed from the Z direction, the connection portions of protrusions 74d to 74f with the control contact front surface 70a are curved surfaces. Furthermore, even with such a structure containing protrusions and recesses, the structure of the conductive portion on the back side 12 of the substrate is similar to... Figure 40 The conductive parts shown have the same structure.

[0381] Based on this structure, the volume of each conductive part 30, 40, 50, 60, and 70 can be increased, thereby improving the heat dissipation of the semiconductor light-emitting device 1.

[0382] Furthermore, recesses 35g and 35h are provided in the common conductive portion 30, and the insulating portion 150 enters into the recesses 35g and 35h. Therefore, the insulating portion 150 is less likely to separate from the common conductive portion 30. Moreover, the recesses 35g and 35h are respectively provided on the common contact front surface 30a, and the insulating portion 150, which does not penetrate in the Z direction, enters into the recesses 35g and 35h. According to this structure, the movement of the common conductive portion 30 relative to the insulating portion 150 in the Z direction toward the housing 20 can be restricted.

[0383] Figure 43 In the semiconductor light-emitting device 1 shown, recesses are not provided in the connecting conductive portion 40, the element conductive portion 50, the driving conductive portion 60, and the control conductive portion 70. However, this is not a limitation; recesses may be provided in at least one of the connecting conductive portion 40, the element conductive portion 50, the driving conductive portion 60, and the control conductive portion 70. These recesses have the same structure as the recesses 35g and 35h in the common conductive portion 30. Furthermore, although not shown, flanges may be provided in at least one of the conductive portions 30, 40, 50, 60, and 70, similar to the flanges 36, 56, 66, and 76 of the conductive portions 30B, 50B, 60B, and 70B in the second embodiment.

[0384] In the first embodiment, the dimensions of the connecting contact back surface 40b, the component contact back surface 50b, the drive contact back surface 60b, and the control contact back surface 70b can be arbitrarily changed. In one example, such as...Figure 44 As shown, the area of ​​the connecting contact back surface 40b and the area of ​​the control contact back surface 70b can be equal to each other. The area of ​​the component contact back surface 50b and the area of ​​the drive contact back surface 60b can be equal to each other.

[0385] In the first embodiment, such as Figure 45 A capacitor 120 can be installed within the housing 20. The capacitor 120 is arranged across the element contact front surface 50a and the drive contact front surface 60a. This structure further enables space saving.

[0386] In the first embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are disposed, for example, at the central portion in the X direction, but are not limited thereto; they may also be disposed at either end in the X direction. For example, the semiconductor light-emitting element 80 and the electronic component 100 may also be disposed at a position closer to the third sidewall portion 21c than at the central portion. With this structure, a larger space can be provided for the capacitor 120.

[0387] • In each embodiment, the electronic component 100 is not limited to a MOSFET, but may be other switching elements such as a bipolar transistor. In the case where the electronic component 100 is, for example, a bipolar transistor, either the first driving electrode 101 or the second driving electrode 103 corresponds to the collector electrode, and the other corresponds to the emitter electrode, and the control electrode 102 corresponds to the base electrode.

[0388] Alternatively, the electronic component 100 may replace the switching element with an IC. Furthermore, the electronic component 100 is not limited to active components such as switching elements, but may also be a passive component such as a capacitor. Additionally, the electronic component 100 may not be a component used in driving the semiconductor light-emitting element 80.

[0389] • In each embodiment, the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100 can be arbitrarily changed. For example, they can be arranged in the X direction or in a direction that intersects the X and Y directions. The common contact front surface 30a can extend in the arrangement direction of the semiconductor light-emitting element 80 and the electronic component 100 such that the semiconductor light-emitting element 80 and the electronic component 100 are disposed on the common contact front surface 30a.

[0390] In the first embodiment, the arrangement of the plurality of conductive portions 30, 40, 50, 60, and 70 can be arbitrarily changed. For example, the driving conductive portion 60 and the control conductive portion 70 can be arranged together on the same side in the X direction relative to the common contact surface 30a. Alternatively, at least one of the driving conductive portion 60 and the control conductive portion 70 can be arranged at a position spaced apart from the common contact surface 30a in the Y direction. The same applies to the connecting conductive portion 40 and the element conductive portion 50. Alternatively, the control conductive portion 70 and the element conductive portion 50 can be arranged together on the same side in the same direction.

[0391] In the second embodiment, the arrangement of the plurality of conductive portions 30B, 50B, 60B, and 70B can be arbitrarily changed. For example, the driving conductive portion 60B and the control conductive portion 70B can be arranged together on the same side of the X-direction relative to the common contact surface 30a. In this case, the first common contact surface portion 30c is aligned with the second common contact surface portion 30d in the X-direction. Alternatively, at least one of the driving conductive portion 60B and the control conductive portion 70B can be arranged at a position spaced apart from the common contact surface 30a in the Y-direction. The same applies to the element conductive portion 50B. Alternatively, the control conductive portion 70B and the element conductive portion 50B can be arranged together on the same side.

[0392] In the first embodiment, the shapes of the plurality of contact surfaces 30a, 40a, 50a, 60a, and 70a can be arbitrarily changed. For example, the plurality of contact surfaces 30a, 40a, 50a, 60a, and 70a can all be the same size, or they can be different. In addition, at least one of the plurality of contact surfaces 30a, 40a, 50a, 60a, and 70a can be formed into an ellipse or a circle.

[0393] In the first embodiment, such as Figure 46 As shown, the common back conductive layer 32 is connected to the connecting back conductive layer 42, and the common contact back surface 30b and the connecting contact back surface 40b can be continuous.

[0394] In the first embodiment, the shapes of the plurality of contact back surfaces 30b, 40b, 50b, 60b, and 70b can be arbitrarily changed. For example, the size of the common contact back surface 30b can be smaller than that of the connecting contact back surface 40b or the element contact back surface 50b. Furthermore, the drive contact back surface 60b and the control contact back surface 70b can be larger than that of the connecting contact back surface 40b and the element contact back surface 50b. Additionally, the plurality of contact back surfaces 30b, 40b, 50b, 60b, and 70b can be all the same size, or they can be different from each other. Moreover, at least one of the plurality of contact back surfaces 30b, 40b, 50b, 60b, and 70b can be formed in an elliptical or circular shape.

[0395] • In the first embodiment, the conductive part 40 can be omitted. Even in this case, the contact between the semiconductor light-emitting device 1 and the outside can be ensured by using the common contact back surface 30b.

[0396] • In each embodiment, the common contact back surface 30b is not necessary. That is, the common back surface conductive layer 32 can be omitted.

[0397] In the first embodiment, such as Figure 47 As shown, the cover 22 may have a structure having a transmission portion 201 disposed above the semiconductor light-emitting element 80 that allows light from the semiconductor light-emitting element 80 to pass through, and a light-shielding portion 202 disposed above the electronic component 100 that blocks light. According to this structure, since the irradiation of the electronic component 100 by light can be suppressed, malfunctions of the electronic component 100 caused by light irradiation can be suppressed.

[0398] The shapes of the light-transmitting part 201 and the light-shielding part 202 are arbitrary, for example... Figure 48 As shown, the transparent portion 201 can be formed only at the position overlapping with the semiconductor light-emitting element 80, and the portion outside therein can be formed as the light-shielding portion 202.

[0399] • In the first embodiment, the cover 22 may be a structure that diffuses light from the semiconductor light-emitting element 80.

[0400] • In each embodiment, the cover 22 may be omitted and only the frame 21 is needed.

[0401] In the first embodiment, such as Figure 49 As shown, the housing 20 can be omitted. In this case, the capacitor 120 can be arranged in the space where the frame 21 is located.

[0402] In the first embodiment, such as Figure 50 As shown, frame 21 may have an inclined surface 210 that slopes upwards as the opening widens.

[0403] In the first embodiment, such as Figures 52-55 As shown, the common connection portion 33 can be formed at a position overlapping with the semiconductor light-emitting element 80. Alternatively, the common connection portion 33 can be formed at a position overlapping with the electronic component 100.

[0404] In the first embodiment, such as Figure 56 As shown, the semiconductor light-emitting device 1 can replace the housing 20, and a housing 20C having the same structure as the housing 20B in the second embodiment can be used. In this case, the semiconductor light-emitting device 1 can further include a light diffusion plate 130. Furthermore, Figure 57 and Figure 53 This indicates a single item with a 20C casing. For example... ​As shown, shell 20C is smaller than shell 20B, and the location of the opening 22a differs from that of shell 20B. Figure 53 and Figure 56 As shown, the opening 22a of the housing 20C is formed on the side of the first side wall portion 21a in the cover 22 and slightly on the side of the fourth side wall portion 21d than the central portion in the X direction. Figure 53 and Figure 56 The size of the opening 22a shown is the same as that of the opening 22a in, for example, the second embodiment. The dimension in the X direction of the housing 20C is smaller than the dimension in the X direction of the housing 20B; therefore, the dimension in the X direction of the opening 22a is more than 2 / 3 of the dimension in the X direction of the housing 20C. In one example, Figure 56 The dimensions of the housing 20C in the X and Y directions are both approximately 3.3 mm, and the dimension of the opening 22a in the X direction is approximately 2.4 mm. Furthermore, Figure 54 The Z-direction dimension of the shown housing 20C is, for example, equal to the Z-direction dimension of housing 20B. Furthermore, Figure 53 and Figure 54 The dimensions of the light diffusion plate 130 shown are the same as those of the light diffusion plate 130 in the second embodiment. Furthermore, the dimensions of the light diffusion plate 130 in this modified example can be arbitrarily changed within a range that allows it to completely cover the opening 22a. In one example, the light diffusion plate 130 may be the size to completely cover the cover 22.

[0405] like Figure 53 As shown, the light diffuser plate 130 is disposed in the central portion of the cover 22 of the housing 20C in the X direction. Therefore, the light diffuser plate 130 is disposed offset from the opening 22a in the X direction. More specifically, in this modified example, viewed from the Z direction, the protrusion distance DX3 of the light diffuser plate 130 from the opening 22a towards the third sidewall portion 21c in the X direction is greater than the protrusion distance DX4 of the light diffuser plate 130 from the opening 22a towards the fourth sidewall portion 21d in the X direction. The protrusion distance DX3 is greater than the protrusion distance DY3 of the light diffuser plate 130 from the opening 22a towards the Y direction towards the first sidewall portion 21a and the protrusion distance DY4 of the light diffuser plate 130 from the opening 22a towards the Y direction towards the second sidewall portion 21b. The protrusion distances DY3 and DY4 are equal. The protrusion distance DX4 is smaller than both DY3 and DY4. Thus, the light diffuser plate 130 is disposed offset from the opening 22a towards the third sidewall portion 21c.

[0406] like Figure 57As shown, viewed from the Z direction, the storage space 23 formed by the inner surfaces of each sidewall portion 21a to 21d has a shape different from a square. In other words, the frame 21 has portions with different width dimensions. Specifically, the third sidewall portion 21c has a first portion 21ca corresponding to the opening 22a in the Y direction, and a second portion 21cb that is closer to the second sidewall portion 21b than the first portion 21ca. The width dimension of the first portion 21ca is larger than the width dimension of the second portion 21cb. The width dimension of the second portion 21cb is equal to the width dimension of each sidewall portion 21a, 21b, and 21d. Here, the width dimension is the dimension in the direction orthogonal to the direction in which each sidewall portion 21a to 21d extends, viewed from the Z direction.

[0407] In this way, viewed from the Z direction, the length in the X direction of the storage space 23 on the side of the second sidewall 21b that forms the opening 22a is longer than the length in the X direction of the storage space 23 on the side of the second sidewall 21b that forms the opening 22a. Furthermore, viewed from the Z direction, the length in the X direction of the storage space 23 on the side of the second sidewall 21b that forms the opening 22a is defined by the length in the X direction from the inner surface of the second portion 21cb to the inner surface of the fourth sidewall 21d. Additionally, the length in the X direction of the storage space 23 on the side of the opening 22a is defined by the length in the X direction from the inner surface of the first portion 21ca to the inner surface of the fourth sidewall 21d.

[0408] like Figure 55 As shown, the opening 22a is formed in the cover 22, opposite to the semiconductor light-emitting element 80. The electronic component 100 is disposed on the side closer to the second sidewall 21b than the opening 22a. That is, the electronic component 100 is disposed in the space of the longer side in the X direction within the storage space 23. This ensures the formation of wires W2 and W3 (see, for example, reference...) Figure 43 ) space.

[0409] ·exist Figures 52-57 In the modified examples of the first embodiment and the second embodiment shown, since the housings 20B and 20C only need to have a transmissive portion that allows light from the semiconductor light-emitting element 80 to pass through, the opening 22a can be replaced, and the housings 20B and 20C are provided with a light-transmitting material. As an example, the housings 20B and 20C are formed by two-color molding of a light-transmitting resin material and a light-shielding resin material.

[0410] • In the first embodiment, the contact front surfaces 30a, 40a, 50a, 60a, and 70a and the contact back surfaces 30b, 40b, 50b, 60b, and 70b can have the same shape.

[0411] • In the second embodiment, the contact front surfaces 30a, 50a, 60a, and 70a and the contact back surfaces 30b, 50b, 60b, and 70b can have the same shape.

[0412] • In the first embodiment, the positions of the connecting parts 43, 53, 63, and 73 are not limited to the positions overlapping with the housing 20, and can be changed arbitrarily.

[0413] In each embodiment, the shapes of the upper surface 80a and the lower surface 80b of the element can be arbitrarily changed. Similarly, the position and shape of the light-emitting region 90 and the electrode 91 on the upper surface of the element can be arbitrarily changed.

[0414] • In each embodiment, the shapes of the upper surface 100a and the lower surface 100b are not limited to rectangles and can be arbitrarily changed. Similarly, the positions and shapes of the first driving electrode 101 and the control electrode 102 can be arbitrarily changed.

[0415] • In each embodiment, the shape of the substrates 10 and 10B is not limited to a square and can be changed arbitrarily. For example, it can also be a rectangle in which one side is longer than the other.

[0416] In each embodiment, the lower surface electrode 92 of the element may be formed on a portion of the lower surface 80b of the element. Similarly, the second driving electrode 103 may also be formed on a portion of the lower surface 100b.

[0417] In each embodiment, the specific structure of electronic devices 2 and 2B is arbitrary. For example, capacitor 120 can be omitted from electronic device 2. Alternatively, capacitor 120 can be added to electronic device 2B. Electronic devices 2 and 2B only need to have a light-receiving element mounted on the circuit substrate 110.

[0418] • In each embodiment, the specific layout of each wiring pattern 111 to 114 is arbitrary. And the heat dissipation pattern 115 may be omitted.

[0419] • In each embodiment, the semiconductor light-emitting device 1, 1B may further have a partition wall separating the semiconductor light-emitting element 80 from the electronic component 100.

[0420] In the first case, such as Figure 58 and Figure 59As shown, the semiconductor light-emitting device 1 with housing 20C has a partition wall 24. The partition wall 24 is formed of a light-shielding material. In one example, the partition wall 24 is formed of the same resin material as housing 20B and is integrally formed with housing 20B. The partition wall 24 is formed in a manner that it hangs down from the cover 22 of housing 20B. In the illustrated example, the partition wall 24 contacts the front side 11 of the substrate. The partition wall 24 is disposed in the Y direction between the semiconductor light-emitting element 80 and the electronic component 100, dividing the storage space 23 into a first storage space 23A for storing the semiconductor light-emitting element 80 and a second storage space 23B for storing the electronic component 100. Figure 59 As shown, partition wall 24 connects the third side wall portion 21c and the fourth side wall portion 21d. That is, the first storage space 23A is a space divided by the first side wall portion 21a, the third side wall portion 21c, the fourth side wall portion 21d, and partition wall 24, and the second storage space 23B is a space divided by the second side wall portion 21b, the third side wall portion 21c, the fourth side wall portion 21d, and partition wall 24. In the illustrated example, partition wall 24 extends along the X direction in the top view. Partition wall 24 is arranged to overlap with the recesses 35e and 35f of the common conductive portion 30 in the Z direction.

[0421] In the second example, such as Figure 60 and Figure 61 As shown, the semiconductor light-emitting device 1B of the second embodiment has a partition wall 24. The partition wall 24 is formed to hang down from the cover 22 of the housing 20B. In the illustrated example, the partition wall 24 contacts the front side 11 of the substrate. The partition wall 24 is disposed in the Y direction between the semiconductor light-emitting element 80 and the electronic component 100, dividing the storage space 23 into a first storage space 23A for storing the semiconductor light-emitting element 80 and the capacitor 120 and a second storage space 23B for storing the electronic component 100. Figure 61 As shown, the partition wall 24 connects the third side wall portion 21c and the fourth side wall portion 21d. That is, the first storage space 23A is a space divided by the first side wall portion 21a, the third side wall portion 21c, the fourth side wall portion 21d and the partition wall 24, and the second storage space 23B is a space divided by the second side wall portion 21b, the third side wall portion 21c, the fourth side wall portion 21d and the partition wall 24.

[0422] like Figure 61 As shown, the partition wall 24 has: a first portion 24a extending from the third sidewall portion 21c along the X direction; a second portion 24b extending from the fourth sidewall portion 21d along the X direction; and a layer gap 24c formed between the first portion 24a and the second portion 24b in the X direction. That is, in the Y direction, the first portion 24a and the second portion 24b are offset from each other. In the illustrated example, the second portion 24b is located at a position offset from the first portion 24a towards the second sidewall portion 21b.

[0423] The first portion 24a separates the semiconductor light-emitting element 80 from the electronic component 100. The second portion 24b separates the capacitor 120 from the wire W2. The layer difference 24c is located between the semiconductor light-emitting element 80 and the capacitor 120 in the X direction. That is, through the layer difference 24c and the second portion 24b, the length in the Y direction of the portion of the first storage space 23A that houses the capacitor 120 is increased. Thus, the capacitor 120 can be housed in the first storage space 23A. In addition, the layer difference 24c is located between the electronic component 100 and the capacitor 120 in the X direction. Therefore, the arrangement space for the sealing resin 140 and the coating agent 141 covering the electronic component 100 can be ensured. Furthermore, the shape of the layer difference 24c in the top view can be arbitrarily changed. In one example, the layer difference 24c can extend obliquely from the first portion 24a toward the fourth sidewall portion 21d and toward the second sidewall portion 21b. Thus, the arrangement space for the sealing resin 140 and the coating agent 141 covering the electronic component 100 can be easily ensured.

[0424] In the third example, the shape of the partition wall 24 can be as shown in the semiconductor light-emitting device 1B of the second example. Figure 62 The changes are made as shown. More specifically, the partition wall 24 is formed such that the semiconductor light-emitting element 80 is disposed in the first storage space 23A, and the electronic component 100 and capacitor 120 are disposed in the second storage space 23B. That is, in the top view, the partition wall 24 is formed in an L-shape connecting the third side wall portion 21c and the first side wall portion 21a. In other words, the first storage space 23A is a space divided by the first side wall portion 21a, the third side wall portion 21c and the partition wall 24, and the second storage space 23B is an L-shaped space divided by the first side wall portion 21a to the fourth side wall portion 21d and the partition wall 24.

[0425] • In the second embodiment, such as Figure 63 As shown, a light-shielding wall 25 can be provided hanging down from the peripheral edge of the opening 22a of the housing 20B. Figure 63 In this structure, the light-shielding wall 25 is formed entirely along the peripheral edge of the opening 22a. According to this structure, even if light from the semiconductor light-emitting element 80 is reflected by the light diffuser plate 130, the reflected light is unlikely to reach the electronic component 100. Therefore, malfunctions of the electronic component 100 caused by light from the semiconductor light-emitting element 80 can be suppressed. Furthermore, the length of the light-shielding wall 25 in the Z direction can be arbitrarily varied within a range where reflected light from the light diffuser plate 130 is unlikely to reach the electronic component 100. Additionally, the light-shielding wall 25 is not limited to a structure formed entirely along the peripheral edge of the opening 22a; it can also be formed on a portion of the peripheral edge of the opening 22a. The light-shielding wall 25 only needs to be formed at least in the portion between the semiconductor light-emitting element 80 and the electronic component 100 around the periphery of the opening 22a. Furthermore, in Figure 63 In the middle, the light diffusion plate 130 can also be like Figure 19 It is shown as a flat plate. Additionally, in Figure 63 The representation of sealing resin 140 and coating agent 141 is omitted, but sealing resin 140 and coating agent 141 may be added in a manner that covers electronic component 100.

[0426] In the second embodiment, the shape of the light diffusion plate 130 is not limited to a flat plate and can be arbitrarily changed. In one example, such as... Figure 63 As shown, the light diffuser plate 130 has a recess 131 that is rectangular in cross-section. In the illustrated example, the bottom 131a of the recess 131 is formed by a flat surface orthogonal to the Z direction. Light from the semiconductor light-emitting element 80 is reflected at the bottom of the recess 131 of the light diffuser plate 130, thus the inner surface constituting the opening 22a functions as a light-shielding wall. Therefore, reflected light from the light diffuser plate 130 is less likely to reach the electronic component 100. Furthermore, as... Figure 63 As shown, a housing 20B can be used that combines a light diffuser 130 with a light-shielding wall 25, having a recess 131. In this case, reflected light from the light diffuser 130 is less likely to reach the electronic component 100.

[0427] Furthermore, in the first embodiment, the semiconductor light-emitting device 1 has... Figure 56 In the case of housing 20C shown, at least one of the structure in which a light-shielding wall 25 is provided in housing 20C and a light-diffusing plate 130 having a recess 131 can also be used.

[0428] • In each embodiment, a venting section may be provided between the substrate 10 (10B) and the housing 20 (20B, 20C) to communicate between the storage space of the housing 20 (20B, 20C) and the outside of the housing 20 (20B, 20C). In the following description of the venting section 160, the housing 20B of the semiconductor light-emitting device 1B of the second embodiment will be used.

[0429] In one example, such as Figure 64 As shown, a sidewall recess 160A is provided on the second sidewall portion 21b of the frame 21 of the housing 20B. The sidewall recess 160A extends from the inner surface of the second sidewall portion 21b to the outer surface. The vent 160 is formed by the sidewall recess 160A and the front surface 11 of the substrate 10B. The vent 160 extends obliquely from the inner surface of the second sidewall portion 21b to the outer surface in the Y direction and from the fourth sidewall portion 21d side to the third sidewall portion 21c side in the X direction. Figure 65As shown, the width of the vent 160 (sidewall recess 160A) is fixed. Therefore, the width of the first opening region S1 on the receiving space 23 side of the vent 160 (sidewall recess 160A) and the width of the second opening region S2 on the outer side of the housing 20B of the vent 160 (sidewall recess 160A) are equal. Here, the width of the vent 160 (sidewall recess 160A) refers to the dimension in the direction orthogonal to the direction in which the vent 160 extends in the top view. Furthermore, the first opening region S1 can also be described as an inner opening region that opens onto the inner surface of the sidewall portion (second sidewall portion 21b) of the housing 20B. The second opening region S2 can also be described as an outer opening region that opens onto the outer surface of the sidewall portion (second sidewall portion 21b) of the housing 20B.

[0430] like Figure 66 As shown, the sidewall recess 160A is formed by recessing in the Z direction from the end face opposite to the front surface 11 of the substrate in the Z direction in the second sidewall portion 21b. Figure 65 and Figure 65 As shown, the sidewall recess 160A has a pair of spaced-apart side surfaces 161 and a top surface 162 connecting the pair of side surfaces 161. In the illustrated example, the pair of side surfaces 161 are tapered slopes that move closer to each other towards the top surface 162. The top surface 162 is a flat surface orthogonal to the Z direction.

[0431] Furthermore, the side wall recess 160A has a first side end face 161a and a second side end face 161b. The first side end face 161a exists between the outer surface of the second side wall portion 21b and one of the side faces 161, and is a convex curved surface viewed from the Z direction. Additionally, a curved surface similar to the first side end face 161a may also exist between the outer surface of the second side wall portion 21b and the other side face 161. The second side end face 161b exists between the inner surface of the second side wall portion 21b and the other side face 161, and is a convex curved surface viewed from the Z direction. Additionally, a curved surface similar to the second side end face 161b may also exist between the inner surface of the second side wall portion 21b and one of the side faces 161.

[0432] Furthermore, around the vent section 160, there is a portion where the adhesive P4, which fixes the housing 20B to the front surface 11 of the substrate, is absent. This prevents the adhesive P4 from entering the vent section 160, thus suppressing any reduction in ventilation performance. Moreover, the number of vent sections 160 can be arbitrarily varied. For example, multiple vent sections 160 can be provided in the frame 21.

[0433] • The shape of the vent 160 (side wall recess 160A) of the housing 20B can be arbitrarily changed when viewed from the side.

[0434] In the first case, such as Figure 67 As shown, the side wall recess 160A further has a pair of curved portions 163 disposed between a pair of side surfaces 161 and a top surface 162. The pair of curved portions 163 connect the pair of side surfaces 161 to the top surface 162. Alternatively, instead of the pair of curved portions 163, the pair of side surfaces 161 of the vent 160 may be formed in a curved shape.

[0435] In the second example, such as Figure 68 As shown, a side wall recess 160A is provided with a curved surface 164 instead of a pair of side surfaces 161 and a top surface 162. The curved surface 164 is a curved surface that is recessed away from the front surface 11 of the substrate as it moves toward the center of the width of the vent 160.

[0436] In the third example, such as Figure 69 As shown, the side wall recess 160A is a V-groove. That is, the vent 160 has a pair of inclined surfaces 165 that are inclined away from the front surface 11 of the substrate as they move toward the center of the width of the vent 160. The pair of inclined surfaces 165 are connected to each other at the center of the width of the vent 160.

[0437] • The shape of the vent 160 (side wall recess 160A) can be arbitrarily changed when viewed from the Z direction.

[0438] In the first case, such as Figure 70 As shown, the vent 160 (sidewall recess 160A) is configured such that the width of the first opening region S1 is larger than the width of the second opening region S2. In other words, the vent 160 (sidewall recess 160A) is configured such that the width of the second opening region S2 is smaller than the width of the first opening region S1. In the illustrated example, the width of the vent 160 (sidewall recess 160A) decreases from the first opening region S1 to the second opening region S2. That is, the vent 160 (sidewall recess 160A) is formed in a cone shape that decreases in size from the first opening region S1 to the second opening region S2 when viewed in the Z direction. According to this structure, by reducing the width of the second opening region S2, the entry of unintentional objects can be further suppressed.

[0439] In the second example, such as Figure 71As shown, the vent 160 (sidewall recess 160A) is configured such that the width of the first opening region S1 is smaller than the width of the second opening region S2. In the illustrated example, the width of the vent 160 (sidewall recess 160A) decreases from the second opening region S2 towards the first opening region S1. That is, the vent 160 (sidewall recess 160A), viewed from the Z direction, is formed in a cone shape that decreases from the second opening region S2 towards the first opening region S1. According to this structure, by reducing the width of the first opening region S1, the entry of unintentional objects can be further suppressed.

[0440] In the third example, such as Figure 72 As shown, the sidewall recess 160A, viewed from the Z direction, is formed as a straight line along the Y direction. Therefore, the vent 160 is formed as a straight line along the Y direction. In the illustrated example, the width of the vent 160 (sidewall recess 160A) is constant. Therefore, the width of the first opening region S1 and the width of the second opening region S2 are equal. Furthermore, Figure 72 In the side wall recess 160A, the width of the vent 160 (side wall recess 160A) can also be changed. In one example, the width of the vent 160 (side wall recess 160A) can decrease or increase as it moves from the first opening region S1 to the second opening region S2.

[0441] In the fourth example, such as Figure 73As shown, the sidewall recess 160A, viewed from the Z direction, is formed in a labyrinth shape (crank shape). More specifically, the sidewall recess 160A has: a first recess 166 including a first opening region S1; a second recess 167 including a second opening region S2; and a third recess 168 connecting the first recess 166 and the second recess 167. In the illustrated example, viewed from the Z direction, the first recess 166 and the second recess 167 extend along the Y direction, respectively. Furthermore, viewed from the Z direction, the first recess 166 and the second recess 167 are offset from each other in the X direction. The third recess 168 extends in a direction intersecting the first recess 166 and the second recess 167, and in the illustrated example, extends along the X direction. Thus, the vent 160 is formed in a labyrinth shape (crank shape). In other words, the vent 160 has: a first vent formed by a first recess 166 and the front surface 11 of the substrate; a third vent formed by a second recess 167 and the front surface 11 of the substrate; and a second vent formed by a third recess 168 and the front surface 11 of the substrate. That is, the vent 160, as a labyrinth structure, has: a first vent extending from the inner surface of the side wall portion (second side wall portion 21b) of the housing 20B to the outer surface; a second vent connected to the first vent and extending in a direction intersecting the direction of extension of the first vent; and a third vent connected to the second vent and extending from the inner surface of the side wall portion (second side wall portion 21b) to the outer surface. According to this structure, the entry of unintentional objects can be further suppressed.

[0442] · Figures 64-73 In this case, the vent 160 is composed of a side wall recess 160A provided in the housing 20B and the front surface 11 of the substrate, but it is not limited to this. For example, the structure of the vent 160 can be changed as in the first and second examples shown below.

[0443] In the first case, such as Figure 74 As shown, a substrate-side recess 160B is provided on the substrate 10B. The vent 160 is formed by the substrate-side recess 160B and the end face of the frame 21. In the illustrated example, the vent 160 is formed by the end face of the substrate-side recess 160B and the second sidewall portion 21b.

[0444] The substrate-side recess 160B is provided such that it is recessed from the front side 11 of the substrate towards the back side 12. In other words, the substrate-side recess 160B is recessed in a manner that moves away from the frame 21 relative to the front side 11 of the substrate in the Z direction. In the illustrated example, the substrate-side recess 160B is provided on the insulating portion 13. Furthermore, in the illustrated example, the shape of the substrate-side recess 160B is similar to... Figure 66The sidewall recess 160A shown is symmetrical in shape. That is, the substrate side recess 160B is composed of a pair of spaced-apart side surfaces 161 and a top surface 162 connecting the pair of side surfaces 161. The pair of side surfaces 161 are tapered slopes that move closer to each other towards the top surface 162. Furthermore, the shape of the substrate side recess 160B is not limited to this and can be modified to resemble... Figures 67-73 The side wall recess 160A shown has the same shape.

[0445] In the second example, such as Figure 75 As shown, a sidewall recess 160A is provided in the housing 20B, and a substrate recess 160B is provided in the substrate 10B. The vent 160 is composed of the sidewall recess 160A and the substrate recess 160B. Here, the sidewall recess 160A and the substrate recess 160B are symmetrical in shape. Furthermore, the shapes of the sidewall recess 160A and the substrate recess 160B are not limited to... Figure 75 The illustrated structure can be changed to be similar to... Figures 67-73 The side wall recess 160A shown has the same shape. In this case, the shape of the side wall recess 160A viewed from the side of the housing 20B may not be symmetrical to the shape of the substrate recess 160B.

[0446] The structure of the ventilation section 160 is not limited to... Figures 64-75 Alternatively, it could utilize the difference in adhesion between the housing 20B and the substrate 10B. Specifically, such as... Figure 76 and Figure 77 As shown, the housing 20B and the substrate 10B do not have side wall recesses 160A and substrate side recesses 160B. Figure 76 and Figure 77 The shell 20B shown can also be constructed such that the end face of the frame 21 in the Z direction is divided into a first region 21ra and a second region 21rb in the circumferential direction of the frame 21. The first region 21ra is sufficiently small compared to the second region 21rb. Since the surface roughness of the first region 21ra and the second region 21rb are different from each other, the bonding force with the adhesive P4 is different. For example, the surface roughness (Ra) of the first region 21ra is 0.01 μm or more and 0.1 μm or less, while the surface roughness (Ra) of the second region 21rb is 1.0 μm or more and 20 μm or less, which is rougher than the first region 21ra. The thickness of the adhesive P4 is, for example, 15 μm or more and 40 μm or less. As a method for forming such a second region 21rb, mechanical treatment such as sandblasting or chemical treatment based on a chemical solution can be exemplified. As an example of such treatment, chemical treatment in which an agent such as a stripping agent is applied to a portion of the end face of the frame 21 can be exemplified.

[0447] like Figure 76 and Figure 77 As shown, the vent 160 is formed by the first region 21ra of the Z-direction end face of the frame 21 and the portion sandwiched between the adhesive P4. However, in the normal transport, storage and use state, the semiconductor light-emitting device 1B is also bonded to the housing 20B and the substrate 10B in the first region 21ra by the adhesive P4, and the vent 160 does not become a clear hole or the like that communicating the storage space 23 with the outside.

[0448] Figure 77 This schematically illustrates the state where the internal pressure of the housing space 23 increases during the installation process of a semiconductor light-emitting device 1B, for example, using a reflow oven. When the internal pressure of the housing space 23 increases, a force acts that causes the housing 20B to peel off from the adhesive P4. Due to this force, localized peeling occurs at the bonding area in the first region 21ra, which is a relatively weak bonding area. As a result, the vent 160 becomes a gap, allowing communication between the housing space 23 and the outside. Furthermore, in Figure 77 For ease of understanding, the vent 160 is shown as a defined gap; however, the actual vent 160 only needs to be a structure that allows gas in the receiving space 23 to escape to the outside. By slightly separating the first region 21ra from the adhesive P4, gas in the receiving space 23 can be discharged to the outside. When the internal pressure of the receiving space 23 decreases due to this venting, the first region 21ra and the adhesive P4 are brought into contact again.

[0449] Based on this structure, the reliability of the semiconductor light-emitting device 1B can be improved. Furthermore, the vent 160 using the first region 21ra is in a closed state under normal use conditions, i.e., the first region 21ra is in contact with the bonding agent P4. Therefore, the entry of unintentional objects such as moisture can be more reliably suppressed. Additionally, in achieving… Figure 77 After ventilation, the ventilation section 160 can be closed again. Therefore, in subsequent use, unintentional entry of objects can be prevented.

[0450] The location and number of the ventilation section 160 can be arbitrarily changed.

[0451] When the vent 160 described above is applied to the first embodiment, a sidewall recess 160A is provided in the frame 21 on the end face opposite to the front surface 11 of the substrate in the Z direction. The sidewall recess 160A is formed from the inner surface of the sidewall portion of the frame 21 to the outer surface. Here, the sidewall portion can be at least one of the sidewall portions 21a to 21d of the frame 21.

[0452] When the above-described ventilation section 160 is applied to the semiconductor light-emitting devices 1 and 1B having partition walls 24 in each embodiment, the ventilation section 160 has: a first ventilation section communicating with the outside of the first storage space 23A and the housing 20 and 20B; and a second ventilation section communicating with the outside of the second storage space 23B and the housing 20 and 20B. The first ventilation section, for example, is provided in each of the sidewall portions 21a to 21d to form a sidewall portion of the first storage space 23A. The second ventilation section, for example, is provided in each of the sidewall portions 21a to 21d to form a sidewall portion of the second storage space 23B.

[0453] In the second embodiment, the shape of the opening 22a of the housing 20B can be arbitrarily changed. In one example, such as... Figures 78-80 As shown, the opening 22a in the top view can be square. In the illustrated example, the opening 22a is square in shape, with its length in the Y direction increased relative to the opening 22a in the second embodiment. In this case, the storage space 23 is as follows... Figure 79 and Figure 80 As shown, the portion of the cover 22 that is at the same position in the Y direction as the opening 22a, namely the first portion 22b, is thinner than the portion of the cover 22 that is closer to the second sidewall portion 21b, namely the second portion 22c. In other words, the second portion 22c is thicker than the first portion 22b. Figure 80 As shown, the first part 22b is the portion adjacent to the opening 22a in the X direction, extending from the opening 22a to the fourth sidewall 21d. The second part 22c extends from the third sidewall 21c to the fourth sidewall 21d in the X direction. Furthermore, the shape of the opening 22a in the top view is not limited to a rectangle such as a square or a rectangle, but can also be a circle, an ellipse, an oblong shape, etc.

[0454] • In each embodiment, the structure housing the semiconductor light-emitting element 80 and the electronic component 100 can be arbitrarily changed. In one example, in semiconductor light-emitting device 1, the semiconductor light-emitting element 80 and the electronic component 100 can be sealed with a sealing resin instead of the housing 20B. In addition, in semiconductor light-emitting device 1B, the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120 can be sealed with a sealing resin instead of the housing 20B.

[0455] As a specific example, such as Figure 81As shown, the semiconductor light-emitting device 1B has a light-transmitting sealing resin 170 that seals the semiconductor light-emitting element 80, the electronic component 100, and the capacitor 120. The sealing resin 170 is formed in a cuboid shape. The sealing resin 170 is formed of a resin material with electrical insulating properties. The sealing resin 170 has an upper surface 171 and side surfaces 172. In the upper surface 171, a plurality of recesses 171a are formed in the portion opposite to the semiconductor light-emitting element 80 in the Z direction. The plurality of recesses 171a are arranged spaced apart from each other, for example, in the X and Y directions. As a result, light from the semiconductor light-emitting element 80 can diffuse.

[0456] A notch 173 is formed in the sealing resin 170 between the semiconductor light-emitting element 80 and the electronic component 100 in the Y direction. A light-shielding wall 174 is provided in the notch 173. In one example, the light-shielding wall 174 is formed by filling the notch 173 with a light-shielding material. An example of the light-shielding material is a colored resin material. According to this structure, since light from the semiconductor light-emitting element 80 can be suppressed from illuminating the electronic component 100, the transmission of malfunctions of the electronic component 100 can be suppressed. Furthermore, viewed from the Z direction, the shapes of the notch 173 and the light-shielding wall 174 are, for example, […]. Figure 61 or Figure 62 The partition wall 24 shown has the same shape. In addition, instead of filling the notch 173 with a light-shielding material to form the light-shielding wall 174, it is also possible to have a structure in which the light-shielding wall 174, which is pre-formed as a plate, is inserted into the notch 173.

[0457] As another example, such as Figure 82 As shown, the semiconductor light-emitting device 1B has a frame 180. The frame 180 is configured to separate the semiconductor light-emitting element 80 from the electronic component 100. The frame 180 is formed, for example, of a light-shielding material. In one example, the frame 180 is formed of a colored resin material. The frame 180 has a partition wall 183 that separates a first housing portion 181 housing the semiconductor light-emitting element 80 and a second housing portion 182 housing the electronic component 100. In the illustrated example, the partition wall 183 is formed of the same material as the frame 180 and is integrally formed with the frame 180. A first sealing resin 190A is filled in the first housing portion 181, and a second sealing resin 190B is filled in the second housing portion 182. In the illustrated example, both sealing resins 190A and 190B are light-transmitting resins. The material of the first sealing resin 190A is the same as the material of the second sealing resin 190B. Alternatively, the materials of the first sealing resin 190A and the second sealing resin 190B may be different from each other. In one example, the second sealing resin 190B may also be filled with a light-shielding material. In one example, the second sealing resin 190B uses a light-shielding resin material. Furthermore, viewed from the Z direction, the shape of the partition wall 183 is, for example, similar to... Figure 61 or Figure 62 The partition wall 24 shown is of the same shape. Alternatively, the first sealing resin 190A can be omitted.

[0458] In the semiconductor light-emitting device 1B, a light diffuser plate 130 is mounted on a frame 180 such that it covers the first receiving portion 181 from the Z direction. The light diffuser plate 130 is supported by a portion of the frame 180 and a partition wall 183. According to this structure, since the partition wall 183 can suppress light from the semiconductor light-emitting element 80 from illuminating the electronic component 100, the occurrence of malfunction of the electronic component 100 can be suppressed.

[0459] In the second embodiment, at least one of the sealing resin 140 and coating agent 141 covering the electronic component 100 may be omitted (see, for example, reference). Figure 63 ).

[0460] • In the first embodiment, at least one of the sealing resin 140 and the coating agent 141 covering the electronic component 100 may be added.

[0461] In the second embodiment, the coating agent 141 may be applied only to the portion of the conductive bonding material P2 that protrudes from the electronic component 100, where the electronic component 100 is connected to the second common contact front surface 30d. This suppresses the sulfidation of the conductive bonding material P2. Furthermore, in the first embodiment, the coating agent 141 may also be applied only to the portion of the conductive bonding material P2 that protrudes from the electronic component 100.

[0462] In the second embodiment, one of the pair of recesses 35b can be omitted from the common conductive portion 30B. Alternatively, one of the pair of recesses 35c can be omitted from the common conductive portion 30B. Furthermore, at least one of the recesses 35a, the pair of recesses 35b, the pair of recesses 35c, the recess 35d, and the recess 35e can be omitted from the common conductive portion 30B.

[0463] In the second embodiment, at least one recess may be provided in the control conductive part 70B. The recess has the same structure as the recess 35a, etc.

[0464] In the second embodiment, the first common contact back surface portion 30e and the second common contact back surface portion 30f can be connected. That is, the recess 35f can be omitted from the common conductive portion 30B. According to this structure, since the common contact back surface portion 30b is enlarged, the heat dissipation of the semiconductor light-emitting element 80 and the electronic component 100 can be improved.

[0465] In the second embodiment, a groove recessed from the common contact front side 30a toward the substrate back side 12 in the Z direction can be provided in the portion between the semiconductor light-emitting element 80 and the electronic component 100 in the common conductive portion 30B. In one example, the groove extends through the common conductive portion 30B in the X direction. Furthermore, the insulating portion 13 does not enter the groove. In this case, the recess 35f can be omitted from the common conductive portion 30B. According to this structure, the entry of the sealing resin 140 and the coating agent 141 into the light-emitting region 90 of the semiconductor light-emitting element 80 can be suppressed. Furthermore, the groove may not extend through the common conductive portion 30B in the X direction. Additionally, the number of grooves can be arbitrarily changed, and multiple grooves can be provided in the common conductive portion 30B.

[0466] In the second embodiment, the first drive contact back surface portion 60e and the second drive contact back surface portion 60f can be connected. That is, the recess 65a can be omitted from the drive conductive portion 60B.

[0467] In the second embodiment, the position of the semiconductor light-emitting element 80 in the Y direction relative to the first common contact surface portion 30c can be arbitrarily changed. In one example, the semiconductor light-emitting element 80 may be disposed at the center of the first common contact surface portion 30c in the Y direction, or it may be disposed in the first common contact surface portion 30c biased towards the first sidewall portion 21a. Furthermore, the semiconductor light-emitting element 80 is disposed in the first common contact surface portion 30c in a manner that it does not protrude in the Y direction relative to the element contact surface 50a.

[0468] • In the second embodiment, the position of the semiconductor light-emitting element 80 in the X direction relative to the first common contact front surface portion 30c can be arbitrarily changed. In one example, the semiconductor light-emitting element 80 may be disposed at the center of the first common contact front surface portion 30c in the X direction, or it may be disposed in the first common contact front surface portion 30c biased towards the third sidewall portion 21c.

[0469] • In the second embodiment, the position of the electronic component 100 in the Y direction relative to the second common contact front surface portion 30d can be arbitrarily changed. In one example, the electronic component 100 may be disposed at the center of the second common contact front surface portion 30d in the Y direction, or it may be disposed in the second common contact front surface portion 30d biased towards the second side wall portion 21b.

[0470] • In the second embodiment, the position of the electronic component 100 in the X direction relative to the second common contact front surface 30d can be arbitrarily changed. In one example, the electronic component 100 may be disposed biased against the second drive contact front surface 60d in the second common contact front surface 30d, or it may be disposed biased against the control contact front surface 70a in the second common contact front surface 30d.

[0471] • In the second embodiment, the semiconductor light-emitting element 80 and the electronic component 100 are arranged spaced apart from each other in the Y direction while being aligned in the X direction.

[0472] • In the second embodiment, the capacitor 120 can be configured to overlap with the electronic component 100 when viewed from the X direction.

[0473] In the second embodiment, the number of capacitors 120 built into the semiconductor light-emitting device 1B can be arbitrarily changed. For example, the semiconductor light-emitting device 1B may have multiple capacitors 120.

[0474] In the second embodiment, the shapes of the plurality of contact surfaces 30a, 50a, 60a, and 70a can be arbitrarily changed. For example, the size of the common contact surface 30a can be smaller than that of the component contact surface 50a. Alternatively, the drive contact surface 60a and the control contact surface 70a can be larger than that of the component contact surface 50a. Furthermore, the sizes of the plurality of contact surfaces 30a, 50a, 60a, and 70a can be all identical, or some can be identical while the rest are different. Moreover, at least one of the plurality of contact surfaces 30a, 50a, 60a, and 70a can be elliptical or circular.

[0475] In the second embodiment, the size of the first common contact front surface portion 30c can be arbitrarily changed. In one example, the first common contact front surface portion 30c may be equal to or smaller than the drive contact front surface 60a. In another example, the first common contact front surface portion 30c may be equal to or smaller than at least one of the element contact front surface 50a and the control contact front surface 70a.

[0476] In the second embodiment, the size of the second common contact front surface 30d can be arbitrarily changed. In one example, the second common contact front surface 30d may be equal to or smaller than the drive contact front surface 60a. In another example, the second common contact front surface 30d may be equal to or smaller than at least one of the element contact front surface 50a and the control contact front surface 70a.

[0477] In the second embodiment, the size of the first drive contact front surface 60c can be arbitrarily changed. In one example, the first drive contact front surface 60c may be equal to or larger than the component contact front surface 50a. In another example, the first drive contact front surface 60c may be equal to or smaller than the control contact front surface 70a.

[0478] In the second embodiment, the size of the second drive contact front surface 60d can be arbitrarily changed. In one example, the second drive contact front surface 60d may be equal to or larger than the component contact front surface 50a. In another example, the second drive contact front surface 60d may be equal to or smaller than the control contact front surface 70a.

[0479] In the second embodiment, the shapes of the plurality of contact back surfaces 30b, 50b, 60b, and 70b can be arbitrarily changed. For example, the size of the common contact back surface 30b can be smaller than that of the element contact back surface 50b. Additionally, the drive contact back surface 60b and the control contact back surface 70b can be larger than that of the element contact back surface 50b. Furthermore, the plurality of contact back surfaces 30b, 50b, 60b, and 70b can all be the same size, or some can be the same while the rest are different. Moreover, at least one of the plurality of contact back surfaces 30b, 50b, 60b, and 70b can be elliptical or circular.

[0480] In the second embodiment, the size of the first common contact back surface portion 30e can be arbitrarily changed. In one example, the first common contact back surface portion 30e can be equal to or smaller than the drive contact back surface portion 60b. In another example, the first common contact back surface portion 30e can be equal to or smaller than at least one of the element contact back surface portion 50b and the control contact back surface portion 70b.

[0481] In the second embodiment, the size of the second common contact back surface portion 30f can be arbitrarily changed. In one example, the second common contact back surface portion 30f can be equal to or smaller than the drive contact back surface portion 60b. In another example, the second common contact back surface portion 30f can be equal to or smaller than at least one of the element contact back surface portion 50b and the control contact back surface portion 70b.

[0482] In the second embodiment, the size of the first drive contact back surface 60e can be arbitrarily changed. In one example, the first drive contact back surface 60e may be equal to or larger than the element contact back surface 50b. In another example, the first drive contact back surface 60e may be equal to or smaller than the control contact back surface 70b.

[0483] In the second embodiment, the size of the second drive contact back surface portion 60f can be arbitrarily changed. In one example, the second drive contact back surface portion 60f may be equal to or larger than the element contact back surface portion 50b. In another example, the second drive contact back surface portion 60f may be equal to or smaller than the control contact back surface portion 70b.

[0484] In the second embodiment, flange 36 can be omitted from the common conductive portion 30B. Additionally, flange 56 can be omitted from the element conductive portion 50B. Furthermore, flange 66 can be omitted from the drive conductive portion 60B. Additionally, flange 76 can be omitted from the control conductive portion 70B.

[0485] • In the second embodiment, the light diffuser plate 130 can be omitted from the semiconductor light-emitting device 1B.

[0486] In the second embodiment, the height of the semiconductor light-emitting element 80 from the front surface 11 of the substrate and the height of the electronic component 100 from the front surface 11 of the substrate can be arbitrarily changed. In one example, the height of the electronic component 100 from the front surface 11 of the substrate can be greater than the height of the semiconductor light-emitting element 80 from the front surface 11 of the substrate.

[0487] In the second embodiment, the Z-direction position of the flange 36 relative to the common conductive portion 30B can be arbitrarily changed. In one example, the flange 36 may be formed on the side closer to the common contact back surface 30b than the common contact front surface 30a. Alternatively, the flange 36 may be formed in a manner that is coplanar with the common contact back surface 30b.

[0488] In the second embodiment, the Z-direction position of the flange 56 relative to the conductive portion 50B of the element can be arbitrarily changed. In one example, the flange 56 may be formed on the side closer to the back surface of the element contact 50b than the front surface of the element contact 50a. Alternatively, the flange 56 may be formed in a manner that is coplanar with the back surface of the element contact 50b.

[0489] • In the second embodiment, the Z-direction position of the flange 66 relative to the driving conductive portion 60B can be arbitrarily changed. In one example, the flange 66 may be formed on the side closer to the driving contact back surface 60b than the driving contact front surface 60a. Alternatively, the flange 66 may be formed in a manner that is coplanar with the driving contact back surface 60b.

[0490] In the second embodiment, the number of capacitors 120 can be arbitrarily changed. In one example, the semiconductor light-emitting device 1B has two capacitors 120.

[0491] In the second embodiment, the Z-direction position of the flange 76 relative to the control conductive portion 70B can be arbitrarily changed. In one example, the flange 76 is formed on the side closer to the control contact back surface 70b than the control contact front surface 70a. Alternatively, the flange 76 may be formed in a manner that is coplanar with the control contact back surface 70b.

[0492] In the second embodiment, the structure of the substrate 10B can be arbitrarily changed. In one example, the semiconductor light-emitting device 1B can replace the substrate formed by the lead frame and have a substrate formed of an insulating material, like the substrate 10 in the first embodiment. In this case, the substrate can be, for example, a ceramic such as alumina or aluminum nitride, a silicon substrate, or epoxy glass. The common conductive portion 30B, the element conductive portion 50B, the driving conductive portion 60B, and the control conductive portion 70B provided on the substrate include, for example, a front conductive layer formed on the front side of the substrate, a back conductive layer formed on the back side of the substrate, and a connection portion electrically connecting the front conductive layer and the back conductive layer.

[0493] In the above embodiments, the arrangement positions of the semiconductor light-emitting element 80 and the electronic component 100 in the contact front surface 30a of the common conductive portion 30B can be arbitrarily changed. In one example, such as... Figure 83 As shown, the semiconductor light-emitting element 80 and the electronic component 100 can be respectively disposed on the first contact front surface portion 30c of the common conductive portion 30B. In the illustrated example, viewed from the X direction, both the semiconductor light-emitting element 80 and the electronic component 100 are disposed at a position overlapping with the capacitor 120.

[0494] The semiconductor light-emitting element 80 is disposed near its end 31b in the first common contact surface portion 30c in the Y direction. The semiconductor light-emitting element 80 is disposed in the first common contact surface portion 30c at a portion opposite to the element conductive portion 50B in the X direction. In the illustrated example, the semiconductor light-emitting element 80 is disposed near its end 31b in the first common contact surface portion 30c in the Y direction relative to the insulating portion 13 between the element conductive portion 50B and the driving conductive portion 60B. In this case, each wire W1 extends in the X direction when viewed from above. Furthermore, the semiconductor light-emitting element 80 is disposed biased towards the element conductive portion 50B in the first common contact surface portion 30c in the X direction.

[0495] The electronic component 100 is disposed in the Y direction at the end of the first common contact surface portion 30c near the second common contact surface portion 30d. More specifically, the electronic component 100 is disposed in the portion of the first common contact surface portion 30c opposite the first drive contact surface portion 60c of the drive conductive portion 60B in the X direction. In this case, each wire W2 is connected to the first drive contact surface portion 60c. Furthermore, the electronic component 100 is disposed in the first common contact surface portion 30c biased towards the drive conductive portion 60B in the Y direction. Additionally, the wire W3 is connected to the end of the control conductive portion 70B located near the first contact surface portion 30c among its two ends in the Y direction.

[0496] Furthermore, viewed from the X direction, the semiconductor light-emitting element 80 can be configured such that a portion of it protrudes from the capacitor 120 to the vicinity of the end 31b of the common conductive portion 30B. Additionally, a portion of the electronic component 100 can be configured to protrude from the first common contact surface portion 30c toward the second common contact surface portion 30d in the Y direction.

[0497] in accordance with Figure 83 The structure shown can shorten the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, and between the electronic component 100 and the capacitor 120, respectively. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the electronic component 100 and the conductive path between the electronic component 100 and the capacitor 120 can be reduced, respectively.

[0498] • In the above embodiments, the structure of the electronic component 100 can be arbitrarily changed. In one example, such as Figure 84 As shown, the first driving electrode 101 and the second driving electrode 103 of the electronic component 100 are respectively formed on the lower surface 100b of the electronic component 100. The control electrode 102 is formed on the upper surface 100a of the electronic component 100. The first driving electrode 101 and the second driving electrode 103 of the electronic component 100 are arranged at intervals in the X direction, aligned with each other in the Y direction. Furthermore, in Figure 84 For ease of explanation, the designations of sealing resin 140 and coating agent 141 are omitted.

[0499] like Figure 84As shown, the electronic component 100 can be flip-chip mounted on the common contact front surface 30a of the common conductive portion 30B and the drive contact front surface 60a of the drive conductive portion 60B. In this case, the electronic component 100 is arranged across the insulating portion 13 between the common conductive portion 30B and the drive conductive portion 60B. The first drive electrode 101 faces the first common contact front surface 30c of the common conductive portion 30B in the Z direction, and the second drive electrode 103 faces the first drive contact front surface 60c of the drive conductive portion 60B in the Z direction.

[0500] More specifically, the first driving electrode 101 is engaged in the portion of the first common contact face portion 30c in the Z direction that is opposite to the first driving contact face portion 60c of the driving conductive portion 60B in the X direction. The second driving electrode 103 is engaged in the end of the first driving contact face portion 60c that is closer to the first common contact face portion 30c in the X direction.

[0501] Along with this configuration of electronic component 100, semiconductor light-emitting element 80 is disposed in the Y direction near end 31b in the common contact front surface 30a. More specifically, semiconductor light-emitting element 80 is disposed in the portion of the first common contact front surface 30c opposite to the element conductive portion 50B in the X direction.

[0502] in accordance with Figure 84 The structure shown can shorten the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, and between the electronic component 100 and the capacitor 120, respectively. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the electronic component 100, and the parasitic capacitance based on the conductive path between the electronic component 100 and the capacitor 120, can be reduced, respectively. Furthermore, since the electronic component 100 is flip-chip mounted on the common contact front surface 30a and the driving contact front surface 60a, compared to a structure where the first driving electrode 101 is connected to the driving contact front surface 60a via multiple wires W2, the parasitic capacitance between the electronic component 100 and the driving contact front surface 60a can be reduced.

[0503] · Figure 84 In the modified example, the volume of capacitor 120 can be reduced. Therefore, as... Figure 85 As shown, capacitor 120 can be positioned close to semiconductor light-emitting element 80 and electronic component 100. More specifically, the first electrode 121 of capacitor 120 is adjacent in the X direction to the wire W1 of the plurality of wires W1 of semiconductor light-emitting element 80 that is biased towards the end of the driving conductive portion 60B. The second electrode 122 of capacitor 120 is adjacent in the X direction to electronic component 100. Furthermore, in Figure 85 For ease of explanation, the designations of sealing resin 140 and coating agent 141 are omitted.

[0504] in accordance with Figure 85 The structure shown can shorten the conductive paths between the semiconductor light-emitting element 80 and the electronic component 100, the semiconductor light-emitting element 80 and the capacitor 120, and the electronic component 100 and the capacitor 120, respectively. Therefore, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the electronic component 100, the parasitic capacitance based on the conductive path between the semiconductor light-emitting element 80 and the capacitor 120, and the parasitic capacitance based on the conductive path between the electronic component 100 and the capacitor 120 can be reduced, respectively.

[0505] · Figures 83-85 In a modified example, the first electrode 91 and the second electrode 92 of the semiconductor light-emitting element 80 may be formed on the lower surface 80b of the semiconductor light-emitting element 80. The first electrode 91 and the second electrode 92 are arranged, for example, aligned with each other in the Y direction and spaced apart in the X direction. In this case, the semiconductor light-emitting element 80 is flip-chip mounted on the common contact front surface 30a of the common conductive portion 30B and the element contact front surface 50a of the element conductive portion 50B. Therefore, the semiconductor light-emitting element 80 is configured to span the insulating portion 13 between the common conductive portion 30B and the element conductive portion 50B. The first electrode 91 faces the element contact front surface 50a of the element conductive portion 50B in the Z direction, and the second electrode 92 faces the first common contact front surface 30c in the Z direction.

[0506] [Postscript]

[0507] The technical ideas that can be grasped based on the above embodiments and the above modifications are described below.

[0508] (Note A1)

[0509] A semiconductor light-emitting device, comprising:

[0510] A substrate made of insulating material;

[0511] A common front conductive layer is formed on the front side of the substrate;

[0512] A semiconductor light-emitting element disposed on a common contact front surface formed by the surfaces of the common front conductive layer; and

[0513] An electronic component disposed on the common contact front surface and electrically connected to the semiconductor light-emitting element via the common front conductive layer.

[0514] (Note A2)

[0515] A semiconductor light-emitting device, comprising:

[0516] A substrate made of conductive material;

[0517] It has a common contact front surface formed by the front side of the substrate, and a common conductive portion formed by a portion of the substrate;

[0518] Semiconductor light-emitting elements disposed on the common contact front surface; and

[0519] An electronic component disposed on the common contact front surface and electrically connected to the semiconductor light-emitting element via the common conductive portion.

[0520] (Note A3)

[0521] Electronic devices equipped with semiconductor light-emitting devices.

[0522] (Note B1)

[0523] In the semiconductor light-emitting device according to claim 60, a substrate-side recess is provided on the substrate-side contact surface that contacts the sidewall portion of the frame. This substrate-side recess is recessed downwards from the substrate-side contact surface and extends from the inner surface of the sidewall portion of the housing to the outer surface.

[0524] The ventilation section is composed of the side wall portion of the frame and the side recess of the substrate.

[0525] (Note B2)

[0526] A sidewall recess is provided on the sidewall contact surface of the frame that contacts the substrate. This sidewall recess is recessed upward from the sidewall contact surface and extends from the inner surface of the sidewall portion to the outer surface.

[0527] A substrate-side recess is provided on the substrate-side contact surface that contacts the side wall portion of the frame. This substrate-side recess is recessed downward from the substrate-side contact surface and extends from the inner surface of the side wall portion of the frame to the outer surface.

[0528] The ventilation section is composed of the side wall recess and the substrate recess.

[0529] (Note B3)

[0530] In the semiconductor light-emitting device described in any one of claims 60, Appendix B1, and Appendix B2, the venting section is configured as a labyrinth structure.

[0531] (Note B4)

[0532] In the semiconductor light-emitting device described in Appendix B3, as the labyrinth structure, the ventilation section includes: a first ventilation section extending from the inner surface of the side wall portion of the frame to the outer surface; a second ventilation section connected to the first ventilation section and extending in a direction intersecting the direction of extension of the first ventilation section; and a third ventilation section connected to the second ventilation section and extending from the inner surface to the outer surface.

[0533] (Note B5)

[0534] In the semiconductor light-emitting device described in any one of claims 60, Appendix B1, and Appendix B2, the vent extends in a direction inclined relative to the direction extending orthogonal to the sidewall portion of the frame, when viewed from a direction perpendicular to the plane.

[0535] (Note B6)

[0536] In the semiconductor light-emitting device described in any one of claims 60, Appendix B1, and Appendix B2, the vent extends along the direction of the side wall portion of the frame when viewed from the planar direction.

[0537] (Note B7)

[0538] In the semiconductor light-emitting device described in any one of claims 60, Appendix B1, and Appendix B2, the inner opening region of the sidewall recess opening on the inner surface of the sidewall portion of the frame is smaller than the outer opening region of the sidewall recess opening on the outer surface of the sidewall portion of the frame.

[0539] (Note B8)

[0540] In the semiconductor light-emitting device described in any one of claims 60, Appendix B1, and Appendix B2, the inner opening region of the sidewall recess opening on the inner surface of the sidewall portion of the frame is larger than the outer opening region of the sidewall recess opening on the outer surface of the sidewall portion of the frame.

[0541] (Note B9)

[0542] In the semiconductor light-emitting device described in any one of claims 60, Appendix B1, and Appendix B2, the inner opening region of the sidewall recess opening on the inner surface of the sidewall portion of the frame is equal to the outer opening region of the sidewall recess opening on the outer surface of the sidewall portion of the frame.

[0543] (Note B10)

[0544] In the semiconductor light-emitting device according to claim 39, the frame is disposed inside the peripheral edge of the front side of the substrate.

[0545] Viewed from a direction perpendicular to the plane of the substrate, at least one of the common conductive portion, the control conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion is provided with a protrusion extending outward from the frame.

[0546] (Note C1)

[0547] In the semiconductor light-emitting device described in claim 1 or claim 2,

[0548] The electronic component has a lower surface on which a first driving electrode and a second driving electrode are formed.

[0549] The second driving electrode is coupled to the common conductive portion.

[0550] The substrate has a driving conductive portion having a driving contact front surface that engages in a state facing the first driving electrode.

[0551] (Note C2)

[0552] The semiconductor light-emitting device described in Appendix C1,

[0553] The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction.

[0554] The common conductive portion has a common contact front extending in the alignment direction of the semiconductor light-emitting element and the electronic component.

[0555] In the planar direction of the substrate, when the arrangement direction of the semiconductor light-emitting element and the electronic component is a first direction, and the direction orthogonal to the first direction is a second direction,

[0556] The common contact front surface has a first common contact front surface portion and a second common contact front surface portion arranged in the first direction.

[0557] The driving contact front is configured to be adjacent to the first contact front in the second direction.

[0558] The semiconductor light-emitting element and the electronic component are disposed on the first common contact front side.

[0559] Explanation of reference numerals in the attached figures

[0560] 1, 1B… Semiconductor light-emitting device

[0561] 2, 2B… Electronic devices

[0562] 10, 10B... substrate

[0563] 11…Substrate front

[0564] 12…Back side of substrate

[0565] 13…Insulation section

[0566] 13L…Rear side half insulation section

[0567] 13U…Front Side Insulation Section

[0568] 20, 20B, 20C… casing

[0569] 21… box

[0570] 21a…First sidewall portion

[0571] 21b…Second sidewall portion

[0572] 21c…Third sidewall

[0573] 21d…Fourth sidewall

[0574] 22…cover

[0575] 22a…Opening

[0576] 23… Storage space

[0577] 23A…First Storage Space

[0578] 23B…Second storage space

[0579] 24…partition wall

[0580] 25…Light-shading wall

[0581] 30, 30B… Common conductive part

[0582] 30a… Common contact front

[0583] 30b…Common contact back

[0584] 30c…First common contact front face

[0585] 30d…Second common contact front face

[0586] 30e…First common contact back part

[0587] 30f…Second common contact back part

[0588] 31…Common front conductive layer

[0589] 32…Common back conductive layer

[0590] 33… Commonly Connected Parts

[0591] 34a~34g…protrusions

[0592] 35a~35e…concave part

[0593] 36…Flange

[0594] 40…Connecting conductive parts

[0595] 40a…Connecting contact front

[0596] 40b…Connecting contact back

[0597] 41…Connecting the front conductive layer

[0598] 42…Connect to the back conductive layer

[0599] 43…Connecting parts

[0600] 44a~44c…protrusions

[0601] 50, 50B… Component conductive parts

[0602] 50a… Component contact front

[0603] 50b… Component contact back side

[0604] 51…Conductive layer on the front side of the component

[0605] 52…Conductive layer on the back of the component

[0606] 53… Component connection part

[0607] 54a~54f…protrusions

[0608] 55…concave

[0609] 56…Flange

[0610] 60, 60B… Drive conductive parts

[0611] 60a…Drive contact front

[0612] 60b…Drive contact back side

[0613] 60c…First drive contact front face

[0614] 60d…Second drive contact front face

[0615] 60e…First drive contact rear part

[0616] 60f…Second drive contact rear part

[0617] 60r…recessed area

[0618] 61…Drive the front conductive layer

[0619] 62…Drive the back conductive layer

[0620] 63…Drive Connector

[0621] 64a~64f…protrusions

[0622] 65…concave

[0623] 66…Flange

[0624] 70, 70B… Control conductive parts

[0625] 70a…Control contact front

[0626] 70b…Control contact back side

[0627] 71…Control the front conductive layer

[0628] 72…Control the back conductive layer

[0629] 73…Control Connector

[0630] 74a, 74b...protrusions

[0631] 76…Flange

[0632] 80… Semiconductor light-emitting element

[0633] 80a… Component upper surface

[0634] 80b… Component lower surface

[0635] 91… Component upper surface electrode

[0636] 92… Component lower surface electrode

[0637] 100… Electronic Components

[0638] 100a…upper surface

[0639] 100b…lower surface

[0640] 101…First driving electrode

[0641] 102… control electrode

[0642] 103…Second driving electrode

[0643] 120… capacitor

[0644] 130…light diffusion plate

[0645] 131…concave

[0646] 140…sealing resin

[0647] 141… Coating agent

[0648] 160…Ventilation Section

[0649] 160A…Sidewall Recess

[0650] 160B…substrate side recess

[0651] 166…First Ventilation Section

[0652] 167…Second Ventilation Section

[0653] 168…Third Ventilation Section

[0654] 170…sealing resin

[0655] 180… frame

[0656] 181…First Storage Department

[0657] 182…Second Storage Department

[0658] 183…partition wall

[0659] 190A…First Sealing Resin

[0660] 190B…Second sealing resin

[0661] 201…through the department

[0662] 202…Light shielding part

[0663] P2…Conductive bonding material

[0664] S1…First opening region (inner opening region)

[0665] S2…Second opening region (outer opening region)

[0666] W1~W3… wires

Claims

1. A semiconductor light-emitting device, characterized in that, include: substrate; A common conductive portion formed on the substrate; A semiconductor light-emitting element mounted on the common conductive portion; and An electronic component mounted on the common conductive portion and electrically connected to the semiconductor light-emitting element via the common conductive portion. The electronic component is the component used to drive the semiconductor light-emitting element. A lower surface electrode is formed on the lower surface of the semiconductor light-emitting element. The electronic component has: an upper surface on which a first driving electrode and a control electrode are formed; and the lower surface on which the second driving electrode is formed, The lower surface electrode of the element and the second driving electrode are bonded to the common conductive portion.

2. The semiconductor light-emitting device as described in claim 1, characterized in that: The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction. The common conductive portion has a common contact front extending in the alignment direction of the semiconductor light-emitting element and the electronic component. The semiconductor light-emitting element and the electronic component are disposed on the common contact front surface.

3. The semiconductor light-emitting device as described in claim 2, characterized in that: The substrate has the following: A driving conductive part having a driving contact front side electrically connected to the first driving electrode via a wire; and The control conductive part has a control contact front side that is electrically connected to the control electrode via a wire. In the planar direction of the substrate, when the arrangement direction is a first direction and the direction orthogonal to the first direction is a second direction, The driving conductive part and the control conductive part are disposed on both sides of the common contact front in the second direction.

4. The semiconductor light-emitting device as described in claim 3, characterized in that: The drive contact front and the control contact front are disposed on both sides of the electronic component in the second direction.

5. The semiconductor light-emitting device as described in claim 3, characterized in that: The common contact surface is larger than the driving contact surface and the control contact surface.

6. The semiconductor light-emitting device as described in claim 4, characterized in that: An upper surface electrode is formed on the upper surface of the semiconductor light-emitting element. A component conductive portion is formed on one side of the common contact surface in the second direction, and the component conductive portion has a component contact surface that is electrically connected to the electrode on the upper surface of the component. A connecting conductive portion electrically connected to the common conductive portion is formed on the other side of the common contact front in the second direction. The connecting conductive portion has a connecting contact surface that protrudes in the second direction from one of the two ends of the common contact surface opposite to the element conductive portion side.

7. The semiconductor light-emitting device as described in claim 6, characterized in that: The conductive portion of the element and the driving conductive portion are disposed on the same directional side of the two sides of the second direction on the common contact front surface.

8. The semiconductor light-emitting device as described in claim 7, characterized in that: It has a capacitor configured to span across the front side of the element contact and the front side of the drive contact.

9. The semiconductor light-emitting device as claimed in claim 6, characterized in that: The conductive connection portion has a back contact located on the back side of the substrate, opposite to the front contact connection. The conductive portion of the element has a component contact back side located on the back side of the substrate, opposite to the component contact front side. The driving conductive part has a driving contact back side located on the back side of the substrate, opposite to the driving contact front side. The control conductive part has a control contact back side located on the back side of the substrate, opposite to the control contact front side.

10. The semiconductor light-emitting device as claimed in claim 9, characterized in that: The back side of the component contact is larger than the back side of the drive contact and the back side of the control contact.

11. The semiconductor light-emitting device as claimed in claim 9, characterized in that: The common conductive portion has a common contact back side located on the back side of the substrate, opposite to the common contact front side.

12. The semiconductor light-emitting device as claimed in claim 11, characterized in that: The common contact back side is spaced apart from the connecting contact back side.

13. The semiconductor light-emitting device as claimed in claim 11, characterized in that: The common contact back side is larger than the connection contact back side, the element contact back side, the drive contact back side, and the control contact back side.

14. The semiconductor light-emitting device as claimed in claim 9, characterized in that: The substrate is made of an insulating material. The common contact front, the connection contact front, the component contact front, the drive contact front, and the control contact front are the front sides of the conductive layer formed on the front side of the substrate. The back side of the connection contact, the back side of the element contact, the back side of the drive contact, and the back side of the control contact are the back sides of the conductive layer formed on the back side of the substrate.

15. The semiconductor light-emitting device as claimed in claim 9, characterized in that: The substrate is made of a conductive material. The common conductive portion, the connecting conductive portion, the element conductive portion, the driving conductive portion, and the control conductive portion are part of a substrate that is insulated from each other by insulating portions. The common contact front, the connection contact front, the component contact front, the drive contact front, and the control contact front are formed by the front surface of the substrate. The back side of the connection contact, the back side of the element contact, the back side of the drive contact, and the back side of the control contact are formed by the back side of the substrate.

16. The semiconductor light-emitting device as claimed in claim 15, characterized in that: At least one of the common conductive portion, the connecting conductive portion, the element conductive portion, the driving conductive portion, and the control conductive portion has a recessed portion on its peripheral edge in a direction orthogonal to the plane direction of the substrate. The insulating part enters the recess.

17. The semiconductor light-emitting device as claimed in claim 16, characterized in that: The recess is disposed on the peripheral edge of at least one of the common contact front, the connection contact front, the component contact front, the drive contact front, and the control contact front.

18. The semiconductor light-emitting device as claimed in claim 15, characterized in that: A flange is provided on the peripheral edge of at least one of the common conductive part, the connecting conductive part, the element conductive part, the driving conductive part, and the control conductive part. The insulating portion extends between the flange in a direction perpendicular to the plane of the substrate and the back surface of the substrate opposite to the side on which the semiconductor light-emitting element is mounted.

19. The semiconductor light-emitting device as claimed in claim 3, characterized in that: The common contact front surface has: The first common contact front surface portion on which the semiconductor light-emitting element is mounted; and The second common contact front surface, on which the electronic components are mounted, The second common contact surface portion is disposed between the driving conductive portion and the control conductive portion in the second direction, and extends towards the side in the second direction that is closer to the first common contact surface portion than the first common contact surface portion. The first common contact front portion extends from the second common contact front portion in the first direction. The semiconductor light-emitting element is disposed in the first common contact front surface portion, offset from the second common contact front surface portion.

20. The semiconductor light-emitting device as claimed in claim 19, characterized in that: An upper surface electrode is formed on the upper surface of the semiconductor light-emitting element. A component conductive portion is formed on one side of the common contact surface in the second direction, and the component conductive portion has a component contact surface that is electrically connected to the electrode on the upper surface of the component. The conductive portion of the element is provided on one side of the first common contact front surface in the second direction. At least a portion of the semiconductor light-emitting element is disposed in the first common contact front surface portion at a position closer to the electronic component than the element contact front surface. A wire is formed connecting the upper surface electrode of the component to the contact surface of the component. When viewed from above, the wire extends at an angle away from the electronic component as it moves from the upper surface electrode of the component toward the contact front of the component.

21. The semiconductor light-emitting device as claimed in claim 20, characterized in that: The semiconductor light-emitting element and the electronic component are arranged in the first direction with the electronic component offset from the semiconductor light-emitting element on the side of the second direction.

22. The semiconductor light-emitting device as claimed in claim 20, characterized in that: A capacitor is provided, configured to span across the front surface of the element contact and the front surface of the drive contact. The driving contact front has: The first driving contact front face of the capacitor is configured; and The second driving contact front face is electrically connected to the first driving electrode via a wire. The first driving contact front surface portion is disposed on the contact front surface side of the component relative to the second driving contact front surface portion. The first driving contact face extends in the second direction. The second driving contact front surface extends in the first direction.

23. The semiconductor light-emitting device as claimed in claim 22, characterized in that: The second driving contact front portion is recessed relative to the first driving contact front portion in such a way that its length in the second direction is shorter than that of the first driving contact front portion. The first common contact front surface is opposite to the first drive contact front surface in the second direction. The second common contact front portion enters the recessed area divided by the first drive contact front portion and the second drive contact front portion, and is opposite to the second drive contact front portion in the second direction.

24. The semiconductor light-emitting device as claimed in claim 22, characterized in that: The first driving electrode is connected to the second driving contact front surface via a plurality of wires. The plurality of said wires are arranged in the first direction when viewed from a plane perpendicular to the substrate.

25. The semiconductor light-emitting device as claimed in claim 24, characterized in that: The two wires that are furthest apart from each other among the plurality of wires are connected to the first driving electrode and the second driving contact front face in a manner that is further apart from each other on the second driving contact front face face than on the first driving electrode side.

26. The semiconductor light-emitting device as claimed in claim 22, characterized in that: The semiconductor light-emitting element and the electronic component are arranged in the first direction such that the electronic component is offset from the semiconductor light-emitting element on the side opposite to the second direction. The capacitor is disposed on one side of the second direction relative to the semiconductor light-emitting element.

27. The semiconductor light-emitting device as claimed in claim 26, characterized in that: The capacitor is disposed on one side of the electronic component in the first direction, and does not overlap with the electronic component when viewed from the second direction.

28. The semiconductor light-emitting device as claimed in claim 20, characterized in that: The first common contact front portion extends further to the side opposite to one of the second directions than the second common contact front portion. The control contact face is formed in the area surrounded by the first common contact face portion and the second common contact face portion.

29. The semiconductor light-emitting device as claimed in claim 20, characterized in that: The common conductive portion has a common contact back side located on the back side of the substrate, opposite to the common contact front side. The conductive portion of the element has a component contact back side located on the back side of the substrate, opposite to the component contact front side. The driving conductive part has a driving contact back side located on the back side of the substrate, opposite to the driving contact front side. The control conductive part has a control contact back side located on the back side of the substrate, opposite to the control contact front side.

30. The semiconductor light-emitting device as claimed in claim 29, characterized in that: The back surface of the component contact is equal to the back surface of the drive contact and the back surface of the control contact.

31. The semiconductor light-emitting device as claimed in claim 29, characterized in that: The common contact back side has: The first common contact back portion is located on the back side of the substrate, opposite to the first common contact front portion; and The second common contact back portion is located on the back side of the substrate, opposite to the second common contact front portion. The first common contact back portion and the second common contact back portion are spaced apart from each other.

32. The semiconductor light-emitting device as claimed in claim 29, characterized in that: The common contact back side has: The first common contact back portion is located on the back side of the substrate, opposite to the first common contact front portion; and The second common contact back portion is located on the back side of the substrate, opposite to the second common contact front portion. The first common contact back surface is larger than the element contact back surface, the drive contact back surface, and the control contact back surface.

33. The semiconductor light-emitting device as described in claim 29, characterized in that: A capacitor is provided, configured to span across the front surface of the element contact and the front surface of the drive contact. The driving contact front has: The first driving contact front face of the capacitor is configured; and The second driving contact front face is electrically connected to the first driving electrode via a wire. The back side of the drive contact has: The first common contact back portion is located on the back side of the substrate, opposite to the first common contact front portion; and The second common contact back portion is located on the back side of the substrate, opposite to the second common contact front portion. The back surface of the first drive contact and the back surface of the second drive contact are spaced apart from each other.

34. The semiconductor light-emitting device as described in claim 33, characterized in that: The common contact back side has: The first common contact back portion is located on the back side of the substrate, opposite to the first common contact front portion; and The second common contact back portion is located on the back side of the substrate, opposite to the second common contact front portion. In the planar direction of the substrate, when the arrangement direction of the element conductive portion and the driving conductive portion is a third direction, and the direction orthogonal to the third direction is a fourth direction, The second drive contact back portion and the control contact back portion are disposed on both sides of the second common contact back portion in the fourth direction.

35. The semiconductor light-emitting device as claimed in claim 29, characterized in that: The substrate is made of a conductive material. The common conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion are part of a substrate divided in a state where they are insulated from each other by insulating portions. The common contact front, the component contact front, the drive contact front, and the control contact front are formed by the front surface of the substrate. The back side of the component contact, the back side of the drive contact, and the back side of the control contact are formed by the back side of the substrate.

36. The semiconductor light-emitting device as claimed in claim 35, characterized in that: At least one of the common conductive portion, the element conductive portion, the driving conductive portion, and the control conductive portion has a recessed portion that is orthogonal to the plane direction of the substrate at its peripheral edge. The insulating part enters the recess.

37. The semiconductor light-emitting device as claimed in claim 36, characterized in that: The recess is disposed on the peripheral edge of at least one of the common contact front, the element contact front, the drive contact front, and the control contact front.

38. The semiconductor light-emitting device as claimed in claim 37, characterized in that: A capacitor is provided, configured to span across the front surface of the element contact and the front surface of the drive contact. The driving contact front has: The first driving contact front face of the capacitor is configured; and The second driving contact front face is electrically connected to the first driving electrode via the wire. The recess is provided between the first driving contact front portion and the second driving contact front portion in the driving contact front.

39. The semiconductor light-emitting device as claimed in claim 35, characterized in that: A flange is provided on the peripheral edge of at least one of the common conductive portion, the element conductive portion, the driving conductive portion, and the control conductive portion. The insulating portion extends between the flange in a direction perpendicular to the plane of the substrate and the back surface of the substrate opposite to the side on which the semiconductor light-emitting element is mounted.

40. The semiconductor light-emitting device as claimed in claim 1, characterized in that: The electronic components are covered with a light-shielding resin material.

41. The semiconductor light-emitting device as claimed in claim 1, characterized in that: The electronic components are bonded to the common conductive portion by a conductive bonding material. At least the portion of the conductive bonding material exposed from the electronic component is covered by a coating agent that inhibits sulfidation.

42. The semiconductor light-emitting device as claimed in claim 1, characterized in that: It has a housing for accommodating the semiconductor light-emitting element and the electronic components.

43. The semiconductor light-emitting device as claimed in claim 42, characterized in that: The semiconductor light-emitting element and the electronic component are arranged in a predetermined direction. The housing has a first sidewall portion and a second sidewall portion that form the arrangement direction of the semiconductor light-emitting element and the electronic components. The semiconductor light-emitting element is disposed closer to the first sidewall portion than the electronic component. The electronic component is disposed closer to the second sidewall portion than the semiconductor light-emitting element.

44. The semiconductor light-emitting device as claimed in claim 42, characterized in that: The housing includes: A frame with an opening at the top, formed of a light-blocking material; and A cover that closes the opening of the frame.

45. The semiconductor light-emitting device as claimed in claim 44, characterized in that: The cover allows light from the semiconductor light-emitting element to pass through.

46. ​​The semiconductor light-emitting device as claimed in claim 45, characterized in that: The cover includes: A transmissive portion disposed above the semiconductor light-emitting element, which allows light from the semiconductor light-emitting element to pass through; and A light-shielding part disposed above the electronic component to block light.

47. The semiconductor light-emitting device as claimed in claim 46, characterized in that: The cover diffuses the light from the semiconductor light-emitting element.

48. The semiconductor light-emitting device as claimed in claim 42, characterized in that: The housing is box-shaped and includes: a cover made of a light-shielding material and facing the substrate in a direction perpendicular to the plane of the substrate; and a sidewall portion made of a light-shielding material and hanging down from the peripheral edge of the cover. The portion of the cover opposite the semiconductor light-emitting element has an opening that penetrates the cover in a direction perpendicular to the plane. A light diffusion plate is mounted on the side of the cover opposite to the semiconductor light-emitting element, perpendicular to the plane, in a manner that covers the opening. The light diffusion plate allows light from the semiconductor light-emitting element to pass through and diffuse.

49. The semiconductor light-emitting device as claimed in claim 48, characterized in that: The light diffusion plate is provided with a recess that is recessed in a direction perpendicular to the plane, moving away from the opening from the side opposite to the semiconductor light-emitting element.

50. The semiconductor light-emitting device as claimed in claim 1, characterized in that: It has a light-shielding partition wall that separates the semiconductor light-emitting element from the electronic component.

51. The semiconductor light-emitting device as claimed in claim 42, characterized in that: The housing has a light-shielding partition wall that separates the semiconductor light-emitting element from the electronic component.

52. The semiconductor light-emitting device as claimed in claim 51, characterized in that: The housing is box-shaped and includes: a cover opposite to the substrate in a direction perpendicular to the plane of the substrate; and a sidewall portion hanging down from the peripheral edge of the cover. The partition wall is arranged with the cover hanging down.

53. The semiconductor light-emitting device as claimed in claim 42, characterized in that: The semiconductor light-emitting element is housed in the storage space formed by the substrate and the housing. A vent is provided between the substrate and the housing to allow the storage space to communicate with the outside.

54. The semiconductor light-emitting device as claimed in claim 53, characterized in that: A sidewall recess is provided on the end face of the sidewall portion of the housing opposite to the substrate in a direction perpendicular to the plane of the substrate. The sidewall recess is recessed relative to the end face in a direction away from the substrate, and extends from the inner surface to the outer surface of the sidewall portion of the housing. The ventilation section is composed of the substrate and the side wall recess.

55. The semiconductor light-emitting device as claimed in claim 53, characterized in that: A substrate side recess is provided on the front surface of the substrate, opposite the sidewall portion of the housing, in a direction perpendicular to the plane of the substrate. This substrate side recess is recessed in a direction away from the housing relative to the front surface of the substrate, and extends from the inner surface of the sidewall portion of the housing to the outer surface. The ventilation section is composed of the side wall portion of the housing and the side recess of the substrate.

56. The semiconductor light-emitting device as described in claim 53, characterized in that: A sidewall recess is provided on the end face of the sidewall portion of the housing opposite to the substrate in a direction perpendicular to the plane of the substrate. The sidewall recess is recessed relative to the end face in a direction away from the substrate, and extends from the inner surface to the outer surface of the sidewall portion of the housing. A substrate side recess is provided on the front surface of the substrate, opposite the sidewall portion of the housing, in a direction perpendicular to the plane of the substrate. This substrate side recess is recessed in a direction away from the housing relative to the front surface of the substrate, and extends from the inner surface of the sidewall portion of the housing to the outer surface. The ventilation section is composed of the side wall recess and the substrate recess.

57. The semiconductor light-emitting device as claimed in claim 53, characterized in that: The ventilation section is constructed as a labyrinth.

58. The semiconductor light-emitting device as claimed in claim 57, characterized in that: As the labyrinth structure, the ventilation section has: a first ventilation section extending from the inner surface of the side wall portion of the housing to the outer surface; a second ventilation section connected to the first ventilation section and extending in a direction intersecting the direction of extension of the first ventilation section; and a third ventilation section connected to the second ventilation section and extending from the inner surface to the outer surface.

59. The semiconductor light-emitting device as claimed in claim 53, characterized in that: Viewed from a direction perpendicular to the plane of the substrate, the vent extends in a direction inclined relative to the direction in which it extends with respect to the sidewall portion of the housing.

60. The semiconductor light-emitting device as claimed in claim 53, characterized in that: Viewed from a direction perpendicular to the plane of the substrate, the vent extends in a direction orthogonal to the direction in which the sidewall of the housing extends.

61. The semiconductor light-emitting device as claimed in claim 53, characterized in that: The inner opening area of ​​the venting part on the inner surface of the side wall of the housing is smaller than the outer opening area of ​​the venting part on the outer surface of the side wall of the housing.

62. The semiconductor light-emitting device as described in claim 53, characterized in that: The inner opening area of ​​the venting part on the inner surface of the side wall of the housing is larger than the outer opening area of ​​the venting part on the outer surface of the side wall of the housing.

63. The semiconductor light-emitting device as claimed in claim 53, characterized in that: The inner opening area of ​​the venting part on the inner surface of the side wall of the housing is equal to the outer opening area of ​​the venting part on the outer surface of the side wall of the housing.

64. The semiconductor light-emitting device as claimed in claim 44, characterized in that: The semiconductor light-emitting element is housed in the storage space formed by the substrate and the housing. A ventilation section is provided between the substrate and the side wall of the frame to allow the storage space to communicate with the outside.

65. The semiconductor light-emitting device as claimed in claim 64, characterized in that: A sidewall recess is provided on the end face of the sidewall portion of the frame opposite to the substrate in a direction perpendicular to the plane of the substrate. The sidewall recess is recessed relative to the end face in a direction away from the substrate, and extends from the inner surface of the sidewall portion to the outer surface. The ventilation section is composed of the substrate and the side wall recess.

66. The semiconductor light-emitting device as claimed in claim 42, characterized in that: The substrate contains: A driving conductive part having a driving contact front side electrically connected to a first driving electrode of the electronic component via a wire; A control conductive part having a control contact front side electrically connected to the control electrode of the electronic component via a wire; and The conductive portion of the element has a component contact front that is electrically connected to the element upper surface electrode of the semiconductor light-emitting element. The sidewall portion of the housing, in a direction perpendicular to the plane of the substrate, is disposed on the substrate further inward than the peripheral edge of the front surface of the substrate opposite to the sidewall portion of the housing. At least one of the common conductive portion, the element conductive portion, the drive conductive portion, and the control conductive portion is provided with a protrusion that extends outward from the sidewall portion of the housing.

67. The semiconductor light-emitting device as claimed in claim 1, characterized in that: The upper surface of the electronic component is located below the upper surface of the semiconductor light-emitting element.

68. The semiconductor light-emitting device as claimed in claim 1, characterized in that: A sealing resin having light-transmitting properties that seals the semiconductor light-emitting element and the electronic components. A light-shielding partition is provided between the semiconductor light-emitting element and the electronic component within the sealing resin.

69. The semiconductor light-emitting device as claimed in claim 1, characterized in that: A frame housing the semiconductor light-emitting element and the electronic components, and with an upward opening, is mounted on the substrate. The frame has a partition wall separating the semiconductor light-emitting element from the electronic component, and the partition wall divides and sets up a first storage part for storing the semiconductor light-emitting element and a second storage part for storing the electronic component.

70. The semiconductor light-emitting device as claimed in claim 69, characterized in that: It also has a light-diffusing plate that is translucent and covers the first storage section from above.

71. The semiconductor light-emitting device as claimed in claim 69, characterized in that: In the first receiving section, the semiconductor light-emitting element is sealed with a light-transmitting first sealing resin. In the second storage section, the electronic components are sealed with a second sealing resin.

72. The semiconductor light-emitting device as claimed in claim 71, characterized in that: The first sealing resin and the second sealing resin are formed of different materials from each other.

73. The semiconductor light-emitting device as claimed in claim 72, characterized in that: The second sealing resin is made of a light-shielding material.

74. The semiconductor light-emitting device according to any one of claims 1 to 73, characterized in that: The semiconductor light-emitting element is a semiconductor laser element.

75. The semiconductor light-emitting device as claimed in claim 74, characterized in that: The semiconductor light-emitting element is a VCSEL element.

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