Manufacturing method of transmission-type optical element, exposure apparatus, article manufacturing method, and transmission-type optical element

Abstract

The present invention provides a manufacturing method of a transmission-type optical element, an exposure apparatus, an article manufacturing method, and a transmission-type optical element. The manufacturing method is characterized by including a first step of forming an antireflection film on a surface of the optical element, and a second step of removing the antireflection film formed in the first step in a thickness direction of the antireflection film. In the second step, the antireflection film is removed in the thickness direction so that at least a part of the antireflection film remains even in a region where the antireflection film is removed.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing method of a transmissive optical element, an exposure apparatus, an article manufacturing method, and a transmissive optical element. BACKGROUND

[0002] An exposure apparatus is used in a lithography process for manufacturing an article such as a semiconductor device, and has an illumination optical system that illuminates a reticle and a projection optical system that projects a pattern of the reticle illuminated by the illumination optical system toward a substrate. By projecting the pattern of the reticle onto the substrate, the pattern is transferred to a resist (photosensitive agent) disposed (coated) on a surface of the substrate. In the exposure apparatus, if the illumination of the reticle is not uniform, there is a possibility that the transfer of the pattern to the resist on the substrate is deteriorated. Therefore, in the illumination optical system, in order to illuminate the reticle with uniform illuminance, a rod integrator or an optical integrator including a plurality of wavefront-dividing elements disposed two-dimensionally is used.

[0003] On the other hand, in the illumination optical system, sometimes non-uniformity is confirmed in the illuminance distribution on the illuminated surface due to contamination or eccentricity of the optical system, a spot of an antireflection film, or the like. Then, Japanese Patent Application Laid-Open No. 2006-210554 discloses a technique in which a filter in which a circular dot pattern (light-blocking object) is provided on a quartz substrate is disposed at a position optically conjugate with the illuminated surface, and the illuminance distribution on the illuminated surface is made uniform by changing the density (transmittance distribution) of the circular dots. SUMMARY

[0004] Problems to be Solved by the Invention

[0005] However, in the technique disclosed in Japanese Patent Application Laid-Open No. 2006-210554, it is difficult to make the illuminance distribution on the illuminated surface uniform with sufficient accuracy. For example, in a case where it is necessary to slightly change the transmittance by the filter, since the number of the circular dots is decreased, the error in the transmittance caused by the error in the size of the circular dots becomes large, and it is not possible to correct the illuminance distribution on the illuminated surface with high accuracy.

[0006] The present application provides a technique related to a transmissive optical element that is advantageous in making the illuminance distribution in an illuminated surface uniform.

[0007] Solution to Problem

[0008] To achieve the above objectives, as an aspect of the present invention, a manufacturing method is a method for manufacturing a (light)-transmitting optical element, characterized in that the manufacturing method comprises: a first step in which an anti-reflective film is formed on the surface of the optical element; and a second step in which the anti-reflective film formed in the first step is removed in the thickness direction of the anti-reflective film, wherein the anti-reflective film is removed in the thickness direction so that at least a portion of the anti-reflective film remains even in the area where the anti-reflective film is removed.

[0009] As another aspect of the present invention, an exposure apparatus is provided for exposing a substrate via a master plate. The exposure apparatus is characterized by comprising: an illumination optical system that illuminates the master plate; and a projection optical system that projects a pattern of the master plate illuminated by the illumination optical system onto the substrate. The illumination optical system includes a transmissive optical element with an anti-reflective film formed on its surface. The anti-reflective film is present throughout the surface and has a film thickness distribution within the surface, such that light transmitted through the optical element forms an illuminance distribution that cancels out the illuminance distribution formed on the surface on which the master plate is disposed by light from the illumination optical system in a state where the optical element has been removed.

[0010] As another aspect of the present invention, there is an article manufacturing method, characterized in that the article manufacturing method comprises: a step of exposing a substrate using the aforementioned exposure apparatus; a step of developing the exposed substrate; and a step of manufacturing an article from the developed substrate.

[0011] As another aspect of the present invention, an optical element is a (light) transmittance type optical element, characterized in that the optical element has an anti-reflective film formed on the surface of the optical element, the anti-reflective film being present throughout the surface, and having a film thickness distribution within the surface corresponding to the illuminance distribution that should be formed by light transmitted through the optical element.

[0012] Other objects or aspects of the present invention will become clear from the embodiments described below with reference to the accompanying drawings.

[0013] The effects of the invention

[0014] According to the present invention, for example, techniques can be provided for transmissive optical elements that facilitate the uniformity of illuminance distribution in an illuminated surface. Attached Figure Description

[0015] Figure 1 This is a schematic diagram showing the configuration of an exposure apparatus as one aspect of the present invention.

[0016] Figure 2 This is a schematic diagram showing the structure of a (light) transmission type optical element.

[0017] Figure 3 This is a flowchart illustrating a method for manufacturing an optical element as one aspect of the present invention.

[0018] Figure 4 It is used for detailed explanation Figure 3 The flowchart of process S02 is shown.

[0019] Figure 5 It is used for detailed explanation Figure 3 The diagram shows the process of S02.

[0020] Figure 6 It is used for detailed explanation Figure 3 The diagram shows the process of S02.

[0021] Figure 7 It is used for explanation Figure 4 The diagram shows the specific method for removing S24.

[0022] Figure 8 It is used for explanation Figure 4 The diagram shows the specific method for removing S24.

[0023] Figure 9 It is used for explanation Figure 4 The diagram shows the specific method for removing S24.

[0024] Figure 10 It is used for explanation Figure 4 The diagram shows the specific method for removing S24. Detailed Implementation

[0025] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments do not limit the invention as defined in the claims. Although multiple features are described in the embodiments, not all of these features are essential to the invention, and multiple features can be combined arbitrarily. Furthermore, in the accompanying drawings, the same or identical components are labeled with the same reference numerals, and repeated descriptions are omitted.

[0026] Figure 1This is a schematic diagram showing the configuration of an exposure apparatus 100 as one aspect of the present invention. The exposure apparatus 100 is, for example, a photolithography apparatus used in the manufacturing process (photolithography process) of semiconductor devices to form patterns on a substrate. The exposure apparatus 100 exposes the substrate W via a master plate R. In this embodiment, it is a step-scan exposure apparatus (scanner) that exposes the substrate W while moving the master plate R and the substrate W in the scanning direction (scanning exposure), transferring the pattern of the master plate R onto the substrate. However, the exposure apparatus 100 may also employ a step-repeat method or other exposure methods.

[0027] Exposure device 100 Figure 1 As shown, it includes an illumination optical system 101, a substrate driving unit 102, a projection optical system 103, a substrate driving unit 104, and a measuring unit 105. Furthermore, in this embodiment, a coordinate system is defined, with the axis along the normal direction of the substrate W designated as the Z-axis, and the axes along mutually orthogonal directions in a plane parallel to the substrate W designated as the X-axis and Y-axis.

[0028] The illumination optical system 101 uses light (beam) from the light source 1 to illuminate the original image R disposed on the illuminated surface (the object surface of the projection optical system 103). The light source 1 may include, for example, an ultra-high pressure mercury lamp that emits i-rays (wavelength 365 nm). However, the light source 1 is not limited to this; it may also be a KrF excimer laser that emits light with a wavelength of 248 nm, an ArF excimer laser that emits light with a wavelength of 193 nm, or an F2 laser that emits light with a wavelength of 157 nm. Alternatively, the light source 1 may also be an EUV light source that emits extreme ultraviolet light (EUV light) with wavelengths of approximately 11 nm to 14 nm.

[0029] A pattern (e.g., a circuit pattern) to be transferred to the substrate W is formed on the original plate R. The original plate R is constructed using a material that allows light from the light source 1 (illumination optical system 101) to pass through, such as quartz glass, as the base material. The original plate drive unit 102 includes, for example, a movable original plate stage that holds the original plate R and an original plate drive mechanism that drives the original plate stage about the X and Z axes.

[0030] The projection optical system 103 projects the pattern of the original image R, illuminated by the illumination optical system 101, onto the substrate W. The projection optical system 103 includes an imaging optical system, whose front focal point is disposed on the surface (position) where the original image R is disposed, and whose rear focal point is disposed on the surface where the substrate W is disposed. In other words, the projection optical system 103 establishes a conjugate relationship between the placement position of the original image R and the placement position of the substrate W.

[0031] The substrate W is a substrate on which the pattern of the original R is transferred, and has a resist (photosensitive material) on its surface. The substrate driving unit 104 includes a movable substrate stage that holds the substrate W and a substrate driving mechanism that drives the substrate stage with respect to the X-axis, Y-axis and Z-axis (and their rotational directions, i.e., ωx, ωy and ωz).

[0032] The measuring unit 105 includes, for example, a light sensor to measure the illuminance distribution formed on the illuminated surface. In this embodiment, the measuring unit 105 is disposed on the object surface of the projection optical system 103, specifically on the original worktable constituting the original drive unit 102.

[0033] The illumination optical system 101 will now be described in detail. The illumination optical system 101 includes a first relay lens 3, a folding mirror M1, an optical integrator 4, a second relay lens 5, and a folding mirror M2. The first relay lens 3 and the folding mirror M1 constitute the first illumination optical system 10, and the second relay lens 5 and the folding mirror M2 constitute the second illumination optical system 12. Light from the first illumination optical system 10 is incident on the second illumination optical system 12 via the optical integrator 4.

[0034] The ellipsoidal mirror 2 has a first focal point and a second focal point, focusing light from the light source 1 disposed at the first focal point toward the second focal point. The first relay lens 3 includes an imaging optical system, with its front focal point disposed at the second focal point of the ellipsoidal mirror 2 and its rear focal point disposed at the incident surface of the optical integrator 4. In other words, the first relay lens 3 sets the second focal point of the ellipsoidal mirror 2 and the incident surface of the optical integrator 4 in a conjugate relationship. Thus, in this embodiment, the illumination optical system 101 includes a first illumination optical system 10 that sets the second focal point of the ellipsoidal mirror 2 and the incident surface of the optical integrator 4 in a conjugate relationship, but it may also include a first illumination optical system that does not have this relationship. Near the pupil surface of the first relay lens 3, a filter (not shown) is disposed to block light in a specific wavelength region, and the exposure wavelength (the wavelength of the light exposing the substrate W) is defined by this filter.

[0035] The optical integrator 4 is an internal reflection type optical integrator that includes an incident surface, a reflecting surface, and an exit surface ES. The optical integrator 4 forms a uniform light intensity distribution (illuminance distribution) on the exit surface ES by reflecting light multiple times from the incident surface. In this embodiment, the optical integrator 4 has a rectangular shape in a cross-section (XY plane) orthogonal to the optical axis AX, but it can also have other shapes (e.g., polygons). Furthermore, the optical integrator 4 is not limited to an internal reflection type optical integrator; it can also be a microlens array type optical integrator such as a compound eye lens.

[0036] The second illumination optical system 12 illuminates the original plate R using light from the exit surface ES of the optical integrator 4. The second relay lens 5 includes an imaging optical system, with its front focal point positioned at the exit surface ES of the optical integrator 4 and its rear focal point positioned at the surface on which the original plate R is disposed. In other words, the second relay lens 5 establishes a conjugate relationship between the exit surface ES of the optical integrator 4 and the surface on which the original plate R is disposed. The second relay lens 5 forms the light intensity distribution (illuminance distribution) of the exit surface ES of the optical integrator 4 on the surface on which the original plate R is disposed.

[0037] In the exposure apparatus 100 of this embodiment, a (light)-transmitting optical element 6 is assembled in the second illumination optical system 12, which functions as a correction filter to correct the illuminance distribution on the illuminated surface. The optical element 6 is disposed near the illuminated surface (e.g., the surface where the original plate R is disposed), a conjugate surface that is conjugate to the illuminated surface, or the illuminated surface or the conjugate surface. In this embodiment, the optical element 6 is disposed near the surface where the original plate R is disposed, specifically, the optical thin film formed on the surface of the optical element 6 (described later) is disposed facing the original plate R on the surface of the illumination optical system 101 closest to the projection optical system 103.

[0038] Figure 2 This is a schematic diagram showing the configuration of a (light) transmitting type optical element 6. Optical element 6 as shown... Figure 2 As shown, an optical thin film C is formed on at least one surface (the surface of the optical element 6) of the substrate 7 (base material) and functions as an anti-reflective film. In this embodiment, the optical thin film C is partially removed in the thickness direction (Z-axis direction) by a removal amount δ relative to any part of the optical thin film C having a film thickness (maximum film thickness) D, thereby forming a film thickness distribution within the surface of the optical thin film. In this way, the optical thin film C exists throughout the surface of the optical element 6 (substrate 7) and has a film thickness distribution within that surface. In other words, the optical thin film C within the surface of the optical element 6 includes a portion of the optical thin film C that has been partially removed in the thickness direction, where at least a portion of the optical thin film C remains.

[0039] The antireflective film C, as an optical thin film, is constructed by overlapping multiple thin films made of materials with different refractive indices on a substrate 7. It utilizes light interference to reduce reflectivity, thereby achieving high overall transmittance. The number, material, and thickness of each thin film constituting the antireflective film are typically adjusted to achieve a specified transmittance or reflectivity, optimizing the light interference conditions. Therefore, the transmittance or reflectivity of the optical thin film C can be varied depending on the amount δ removed when the optical thin film C is locally removed in the thickness direction. Furthermore, the type of optical thin film C (film type) is not limited to dielectric multilayer films; it can also be a single-layer film.

[0040] On the other hand, if the optical film C formed on the substrate 7 is completely removed in the thickness direction, the portion of the optical film C completely removed in the thickness direction will no longer function as an anti-reflective film. However, for the purpose of correcting the illuminance distribution in the illuminated surface, that is, making the illuminance distribution more uniform, the amount δ of the optical film C removed can be the degree to which the thickness (thickness distribution) of the outermost film among the multiple films constituting the anti-reflective film is adjusted. Therefore, in this embodiment, the local removal of the optical film C along the thickness direction has a negligible impact on its function as an anti-reflective film.

[0041] The following is for reference Figure 3 The manufacturing method for optical element 6 will be described. In step S01 (first step), an optical thin film C, which functions as an anti-reflective film, is formed on the surface of substrate 7. The number, material, and thickness of the thin films constituting the optical thin film C formed in step S01 are adjusted as described above to optimize light interference conditions. In this embodiment, an optical thin film C with a uniform film thickness D is formed on the surface of substrate 7.

[0042] In step S02 (second step), the optical film C formed in step S01 is removed in the thickness direction. At this time, the optical film C is removed in the thickness direction in such a way that at least a portion of the optical film C remains even in the areas where it has been removed. Therefore, even after step S02, the optical film C formed on the surface of the substrate 7 retains at least a portion of it in the thickness direction throughout the surface of the substrate 7. In this embodiment, the optical film C, having a film thickness D, is locally removed in the thickness direction by a removal amount δ at any location of the optical film C. Thus, as... Figure 2 As shown, a transmissive optical element 6 can be manufactured having an optical thin film C that is present throughout the surface of the substrate 7 and has a film thickness distribution within that surface.

[0043] Here, refer to Figure 4 The process of removing the optical thin film C in the thickness direction (process S02) is described in detail.

[0044] In step S21 (third step), the illuminance distribution formed on the illuminated surface using light from the illumination optical system 101 in a state where the transmissive optical element 6 has been removed is obtained. Specifically, a measuring unit 105 provided on the original worktable is placed on the surface where the original R is placed, and the measuring unit 105 (light intensity sensor) measures the light from the illumination optical system 101 in a state where the transmissive optical element 6 has been removed, thereby obtaining the illuminance distribution on the illuminated surface. Figure 5 (a) is a diagram showing an example of the illuminance distribution in the illuminated surface obtained in S21.Figure 5 The illuminance distribution shown in (a) indicates that the illuminance at coordinate a within the illuminated surface decreases locally.

[0045] In S22, the transmittance distribution in the optical thin film C, which functions as an anti-reflective film, is designed to cancel out the illuminance distribution in the illuminated surface obtained in S21. Figure 5 (b) is a diagram showing an example of the transmittance distribution in the optical thin film C designed in S22. Figure 5 The transmittance distribution shown in (b) is for Figure 5 The transmittance distribution designed based on the illuminance distribution shown in (a) has the maximum transmittance T at coordinate A in the optical film plane corresponding to coordinate a in the illuminated area. max .

[0046] In S23 (step 4), the thickness distribution of the optical film C is determined based on the illuminance distribution on the illuminated surface obtained in S21 and the transmittance distribution in the optical film C designed in S22. Furthermore, determining the thickness distribution of the optical film C refers to determining the portion of the optical film C within the surface of the optical element 6 (substrate 7) to be removed (coordinates within the optical film surface), and the amount of optical film C removed, δ, in that portion. Specifically, as... Figure 5 As shown in (c), to make Figure 5 The illuminance distribution shown in (a) and Figure 5 (b) shows a method to achieve uniform illuminance distribution in the illuminated surface by matching the transmittance distribution (i.e., to achieve...). Figure 5 (as shown in (b)) is used to determine the thickness distribution of the optical thin film C. Refer to... Figure 5 (c), as the thickness distribution of the optical thin film C, will have the maximum transmittance T. max The amount of material removed at coordinate A within the optical thin film surface is set to zero, based on the maximum transmittance T. max The transmittance difference (T) between the transmittance T at each coordinate (location) and the transmittance T. max -T) to determine the amount removed δ. Figure 6 The transmittance difference (T) is shown. max The relationship between -T) and the amount removed δ. By obtaining this relationship in advance, the coordinates (positions) within the optical thin film plane and the transmittance difference (T) can be determined. max The amount removed δ corresponding to -T).

[0047] In S24, based on the film thickness distribution (removal amount δ in each coordinate within the optical film surface) determined in S23, a removal process is performed on the optical film C formed on the substrate 7 in S01 to locally remove the optical film C in the thickness direction. As a result, the optical film C exists throughout the surface of the substrate 7 and has a film thickness distribution within the surface of the substrate 7 corresponding to the illuminance distribution that should be formed by the light transmitted through the optical element 6. Furthermore, the specific method of the removal process performed in S24 will be described later.

[0048] In S25, the optical element 6, for which the removal process was applied in S24, is assembled into the illumination optical system 101. In this embodiment, as described above, the optical element 6 is assembled on the side of the illumination optical system 101 closest to the projection optical system 103 with the optical thin film C facing the original R.

[0049] In S26, the illuminance distribution formed on the illuminated surface using light from the illumination optical system 101, which is equipped with the transmissive optical element 6, is obtained. Specifically, a measuring unit 105 provided on the original worktable is placed on the surface on which the original R is placed, and the measuring unit 105 (light intensity sensor) measures the light from the illumination optical system 101, which is equipped with the transmissive optical element 6, thereby obtaining the illuminance distribution on the illuminated surface. Figure 5 (d) is a diagram showing an example of the illuminance distribution in the illuminated surface obtained in S26. Figure 5 The illuminance distribution shown in (d) makes the illuminance more uniform within the illuminated surface.

[0050] Thus, according to this embodiment, a transmissive optical element 6 that achieves a uniform illuminance distribution in the illuminated surface can be manufactured (provided). The exposure apparatus 100 having an illumination optical system 101 with such a transmissive optical element 6 assembled can uniformly illuminate the original R and can effectively transfer the pattern of the original R to the resist on the substrate.

[0051] Reference Figure 7 An example of a specific method for a removal process (S24) in which the optical thin film C is partially removed in the thickness direction will be described. In the removal process, the following processing technique, known as IBF (Ion Beam Figuring), is used: by irradiating the portion of the optical thin film C to be removed with an ion beam, the optical thin film C in that portion is removed in the thickness direction.

[0052] Figure 7This is a schematic diagram showing the configuration of an ion beam processing apparatus 200 for achieving IBF (Induction Free). The ion beam processing apparatus 200 includes a chamber 21 for maintaining a vacuum state, an ion beam generating unit 22, a drive stage 24, and a current density measuring unit 25. The ion beam generating unit 22, the drive stage 24, and the current density measuring unit 25 are located inside the chamber 21.

[0053] An ion beam 23 from the ion beam generator 22 irradiates a transmissive optical element 6, specifically an optical thin film C formed on a substrate 7, which is held (set) on the drive stage 24 and serves as the workpiece. By scanning and driving the drive stage 24, the ion beam 23 is irradiated onto any part (position) of the optical thin film C, thereby performing a removal process that locally removes the optical thin film C in the thickness direction.

[0054] By irradiating the ion beam 23 from the ion beam generator 22 onto the current density measuring unit 25 provided on the drive stage 24, the beam profile of the ion beam 23 can be measured. By optimizing the beam profile of the ion beam 23 measured by the current density measuring unit 25 relative to processing conditions such as the removal amount δ (processing amount) of the optical thin film C or the processing spacing, high-precision removal processing can be achieved.

[0055] By using such an ion beam processing apparatus 200 for removal processing (S24), a transmissive optical element 6 can be manufactured (provided) that can precisely correct the non-uniformity of illuminance distribution in the illuminated surface, that is, achieve a uniform illuminance distribution in the illuminated surface.

[0056] Reference Figure 8 This section describes another specific method for a removal process (S24) that locally removes the optical thin film C in the thickness direction. In this removal process, a technique known as MRF (Magneto-Rheological Finishing) can also be used: the portion of the optical thin film C to be removed is ground using a magnetic fluid containing abrasive particles, thereby removing the optical thin film C in that portion in the thickness direction. MRF is a high-precision grinding technique utilizing magnetic force.

[0057] Specifically, such as Figure 8 As shown, a magnetic fluid 31 containing abrasive particles flows between the optical thin film C formed on the substrate 7 and the worktable 32. Furthermore, when a magnetic force 34 is applied to the magnetic fluid 31 from the electromagnet 33, the magnetic abrasive particles contained in the magnetic fluid 31 come into contact with the surface of the optical thin film C due to the influence of the magnetic force 34. At this time, by driving the worktable 32, the magnetic fluid 31 flows on the surface of the optical thin film C, and the optical thin film C is polished by the magnetic fluid 31. By controlling the magnetic force 34 obtained by the electromagnet 33, high-precision removal processing can be achieved.

[0058] By using such high-precision grinding technology for removal processing (S24), it is possible to manufacture (provide) a transmissive optical element 6 that can accurately correct the non-uniformity of illuminance distribution in the illuminated surface, that is, achieve a uniform illuminance distribution in the illuminated surface.

[0059] Reference Figure 9 (a) to (d) illustrate another specific method for the removal process (S24) in which the optical thin film C is partially removed in the thickness direction. In the removal process, a process technique in which the optical thin film C in the thickness direction is removed by etching the portion to which the optical thin film C is removed can also be used, for example, an etching technique using a photoresist.

[0060] Specifically, firstly, such as Figure 9 As shown in (a), resist 41 is applied onto the optical thin film C formed on the substrate 7. Next, as... Figure 9 As shown in (b), the portion 42 where the optical thin film C is removed is exposed and developed using an exposure device or the like, thereby removing the resist 41 from portion 42. Next, as... Figure 9 As shown in (c), an etching process is performed on portion 42 to remove (scrape off) the optical thin film C in portion 42. Furthermore, as... Figure 9 As shown in (d), the resist 41 coated on the optical film C is peeled off. This is done by... Figure 9 The processes shown in (a) to (d) enable high-precision removal of any part of the optical thin film C.

[0061] By using such etching technology for removal processing (S24), it is possible to manufacture (provide) a transmissive optical element 6 that can precisely correct the non-uniformity of illuminance distribution in the illuminated surface, that is, achieve a uniform illuminance distribution in the illuminated surface.

[0062] Reference Figure 10 (a) to (c) illustrate another example of a specific method for a removal process (S24) in which the optical film C is partially removed in the thickness direction. In this removal process, a technique can also be used that removes the optical film C in the thickness direction from the portion to which the optical film C is to be removed by applying a stripping agent. For example, HF (hydrofluoric acid) can be used as the stripping agent.

[0063] Specifically, firstly, such as Figure 10 As shown in (a), a mask 51 including an opening 52 is disposed on the optical thin film C formed on the substrate 7. Next, as... Figure 10 As shown in (b), by allowing the stripping agent 53 to flow into the opening 52 of the mask 51, the optical film C exposed in the opening 52 is removed (stripped). Furthermore, as... Figure 10As shown in (c), the mask 51 disposed on the optical thin film C is removed. This is done by... Figure 10 The processes shown in (a) to (c) enable high-precision removal of any part of the optical thin film C.

[0064] By using such a stripping agent technique for removal processing (S24), it is possible to manufacture (provide) a transmissive optical element 6 that can precisely correct the non-uniformity of illuminance distribution in the illuminated surface, that is, achieve a uniform illuminance distribution in the illuminated surface.

[0065] The article manufacturing method according to embodiments of the present invention is suitable for manufacturing articles such as semiconductor devices, flat panel displays, liquid crystal display devices, and MEMS. The manufacturing method includes: a step of exposing a substrate coated with a photosensitive agent using the aforementioned exposure apparatus 100; and a step of developing the exposed photosensitive agent. Furthermore, using the pattern of the developed photosensitive agent as a mask, an etching process or an ion implantation process is performed on the substrate to form a circuit pattern. These exposure, development, and etching processes are repeated to form a circuit pattern consisting of multiple layers on the substrate. In subsequent processes, the substrate with the circuit pattern is cut (processed) and chips are mounted, bonded, and inspected. Additionally, this manufacturing method may include other well-known processes (oxidation, film formation, vapor deposition, doping, planarization, resist stripping, etc.). The article manufacturing method of this embodiment is advantageous compared to conventional methods in at least one aspect of article performance, quality, productivity, and production cost.

[0066] This invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the concept and scope of the invention. Therefore, the claims are appended to disclose the scope of the invention.

Claims

1. A method for manufacturing a light-transmitting optical element, wherein the optical element is assembled into an illumination optical system for illuminating an illuminated surface, characterized in that, The above manufacturing method has the following characteristics: The process of forming an optical thin film on the surface of the aforementioned optical element by overlapping multiple thin films with different refractive indices; The process of obtaining the illuminance distribution formed on the above-mentioned illuminated surface; The process of designing the light transmittance distribution of the optical thin film based on the obtained illuminance distribution. The process of determining the portion of the optical thin film to be removed from the surface of the optical element and the amount of the optical thin film to be removed from that portion based on the light transmittance distribution described above. as well as The process of removing the optical thin film formed on the surface of the optical element in the thickness direction of the optical thin film by the aforementioned removal amount, so that a portion of the optical thin film remains in the portion to be removed.

2. The manufacturing method as described in claim 1, characterized in that, In the removal process described above, the optical film in the portion of the surface to which the optical film should be removed is removed by irradiating it with an ion beam in the thickness direction.

3. The manufacturing method as described in claim 1, characterized in that, In the removal process described above, the portion of the surface to which the optical film should be removed is ground by using a magnetic fluid containing abrasive particles, thereby removing the optical film in the portion in the thickness direction.

4. The manufacturing method as described in claim 1, characterized in that, In the removal process described above, the optical film in the portion of the surface to which the optical film should be removed is removed by etching in the thickness direction.

5. The manufacturing method as described in claim 1, characterized in that, In the removal process described above, the optical film in the portion of the surface to be removed is removed by applying a stripping agent, thereby removing the optical film in that portion in the thickness direction.

6. The manufacturing method as described in claim 1, characterized in that, The aforementioned optical films include anti-reflective films.

7. The manufacturing method as described in claim 1, characterized in that, In the aforementioned determined process, the aforementioned portion and the aforementioned removal amount are determined so that an illuminance distribution is formed on the aforementioned illuminated surface that uses light transmitted through the aforementioned optical element to offset the aforementioned illuminance distribution.

8. An exposure apparatus for exposing a substrate using a master plate, characterized in that, The above-mentioned exposure apparatus has: An illumination optical system that illuminates the aforementioned original plate disposed on the illuminated surface; and A projection optical system that projects the original image illuminated by the aforementioned illumination optical system onto the aforementioned substrate. The aforementioned lighting optical system includes a transmissive optical element whose surface has an anti-reflective film formed by overlapping multiple thin films with different refractive indices. The antireflective film is formed integrally on at least one surface of the optical element and has a film thickness distribution that is determined to make the illuminance distribution in the illuminated surface more uniform.

9. The exposure apparatus as claimed in claim 8, characterized in that, The aforementioned optical elements are disposed on the illuminated surface of the aforementioned illumination optical system or on the conjugate surface of the illuminated surface.

10. The exposure apparatus as claimed in claim 8, characterized in that, The aforementioned optical element is disposed on the surface of the illumination optical system closest to the projection optical system, with the anti-reflective film facing the original plate.

11. A method for manufacturing an article, characterized in that, The above-mentioned method of manufacturing the article has the following characteristics: The process of exposing a substrate using the exposure apparatus of claim 8; The process of developing the exposed substrate; and The process of manufacturing articles from the aforementioned substrate that has been developed.

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