A method for measuring the deflection angle of a composite substrate and a device manufacturing method

Abstract

The present application discloses a composite substrate deflection angle measurement method and a device manufacturing method, comprising: positioning the composite substrate to be measured on a sample stage based on the positioning structure of the substrate in the composite substrate to be measured; placing the detector at the 2θ2 position, wherein θ2 represents the theoretical value of the Bragg angle of the target crystal plane, wherein the target crystal plane is the known side crystal plane of the active layer substrate; rotating the sample stage until the maximum value of the X-ray diffraction intensity is measured, and obtaining the angle measurement value θ1 corresponding to the position; calculating the composite substrate deflection angle α, which is the difference between the theoretical value θ2 of the Bragg angle and the angle measurement value θ1. The composite substrate deflection angle α calculated by the present application can reflect both the bonding deviation between the substrate and the active layer substrate, and the error caused by the cutting positioning structure of the active layer substrate itself, so as to accurately determine the deflection between the substrate and the active layer substrate in the composite substrate.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and in particular relates to a method for measuring a deflection angle of a composite substrate and a device manufacturing method. Background Art

[0002] The composite substrate includes a base substrate and an active layer substrate, wherein the active layer substrate includes a single crystal thin film for realizing the main function. Since the crystals in the single crystal thin film have various anisotropies, that is, single crystal thin films with different crystal orientations (or tangents) have different properties, such as optical, electrical or other properties, when using, the best crystal orientation of the crystal should be selected according to the application requirements. For example, the piezoelectric quartz crystal uses the X-axis of the quartz crystal. The direction is used as the direction of the electric axis; when lithium tantalate is used in surface wave devices, the Y direction is rotated 42° and the X direction is used as the surface wave propagation direction. It can be seen that whether the crystal orientation of the single crystal film on the composite substrate can be accurately located has an important impact on the performance of downstream devices.

[0003] For single-layer wafers, there is a problem that the actual crystal plane obtained deviates from the theoretical crystal plane due to cutting deviation. This cutting deviation in single-layer wafers can be accurately measured by X-ray orientation and other measurement methods to accurately measure the actual crystal plane of the single-layer wafer, so that the best crystal orientation can be selected for downstream devices. It should be noted that in single-layer wafers, the theoretical crystal plane refers to the crystal plane positioned with the positioning structure of the single-layer wafer as the reference; in composite substrates, the theoretical crystal plane refers to the crystal plane positioned with the positioning structure of the substrate as the reference.

[0004] However, non-epitaxially grown composite substrates are usually prepared by bonding the base substrate and the active substrate. Therefore, for the composite substrate, there are cutting errors when preparing the positioning structure of the active layer substrate, mechanical alignment errors of the materials during bonding, and errors caused by the bonding characteristics (the necessary free fall behavior during bonding), which leads to a significant deviation between the theoretical crystal plane of the active layer substrate in the composite substrate during use and the actual crystal plane of the active layer substrate, so that the characteristics of the active layer material of a specific crystal orientation in the composite substrate cannot be fully utilized during application, resulting in low performance of the prepared downstream device.

[0005] The existing detection method is to detect the crystal orientation of a single wafer surface, and can only obtain the error caused by wafer cutting. However, the composite substrate is usually used as a reference for the theoretical crystal plane orientation of the substrate substrate. Therefore, the existing detection method for a single wafer, that is, by detecting the crystal orientation of the active substrate surface, cannot solve the purpose of detecting whether the specific crystal orientation of the active layer in the composite substrate can be fully utilized.

[0006] Therefore, how to quickly determine the deviation between the theoretical crystal plane of the active substrate in the composite substrate during use and the actual crystal plane of the active layer substrate is a technical problem that urgently needs to be solved. Summary of the invention

[0007] In order to solve the above technical problems, the present application provides a method for measuring the deflection angle of a composite substrate and a device manufacturing method. Taking the positioning structure of the substrate as a reference, the bonding deviation and the cutting deviation of the positioning mechanism can be simultaneously measured, and the problem of how to determine the deviation between the theoretical crystal orientation of the active substrate in use and the actual crystal orientation of the active layer substrate in the composite substrate is solved, so as to achieve the purpose of screening composite substrates that meet the requirements and can make full use of the specific crystal orientation performance of the active layer.

[0008] In a first aspect, the present application provides a method for measuring a deflection angle of a composite substrate, comprising:

[0009] Using the positioning structure of the base substrate in the composite substrate to be tested as a reference, positioning the composite substrate to be tested on the sample stage;

[0010] placing the detector at a position of 2θ2, wherein θ2 represents a theoretical value of a Bragg angle of a target crystal plane, wherein the target crystal plane is a known side crystal plane of the active layer substrate;

[0011] Rotate the sample stage until the maximum X-ray diffraction intensity is measured, and obtain the angle measurement value θ1 corresponding to the position;

[0012] The composite substrate deflection angle α is calculated, where the composite substrate deflection angle α is the difference between the theoretical value θ2 of the Bragg angle and the measured angle value θ1.

[0013] In one implementation, if the positioning structure of the base substrate is a first positioning edge and the positioning structure of the active layer substrate is a second positioning edge, the target crystal plane is the side surface where the second positioning edge of the active layer substrate is located.

[0014] In one implementation, if the positioning structure of the base substrate is a first positioning groove, and the positioning structure of the active layer substrate is a second positioning groove; or if the positioning structure of the base substrate is a first positioning groove, and the positioning structure of the active layer substrate is a second positioning edge; then the target crystal plane is the side surface of the active layer substrate that is 180 degrees to the first positioning groove;

[0015] If the positioning structure of the base substrate is a first positioning edge and the positioning structure of the active layer substrate is a second positioning groove, the target crystal plane is a side surface of the active layer substrate parallel to the first positioning edge and away from the first positioning edge.

[0016] In one implementation, if the positioning structure of the substrate is a first positioning edge, it also includes a positioning fixture having a positioning side that cooperates with the sample stage, the positioning fixture is located on the side of the sample stage, the positioning side faces the direction of the sample stage, and the positioning side is used to abut the first positioning edge on the substrate.

[0017] In one implementation, if the positioning structure of the substrate base plate is a first positioning groove, a positioning fixture having a positioning angle matched with the sample stage is further included, and the positioning angle is used to abut against the first positioning groove on the substrate base plate.

[0018] In one implementation, the substrate is a single-layer structure or a multi-layer composite structure.

[0019] In one implementation, the active layer substrate is a single-layer structure or a multi-layer composite structure.

[0020] In a second aspect, the present application further provides a device manufacturing method, comprising using the composite substrate deflection angle measurement method described in the first aspect to obtain a composite substrate deflection angle;

[0021] Positioning the actual crystal plane of the active layer substrate in the composite substrate according to the positioning structure of the base substrate in the composite substrate and the deflection angle of the composite substrate;

[0022] The composite substrate is processed based on the actual crystal plane to manufacture a target device.

[0023] In summary, the composite substrate deflection angle measurement method and device manufacturing method provided by the present application use the positioning structure of the substrate as a reference, and the known side crystal plane of the active layer substrate as the target crystal plane for measurement and calculation. The obtained composite substrate deflection angle α can reflect both the bonding deviation between the substrate and the active layer substrate, and the error caused by the cutting positioning structure of the active layer substrate itself, so as to accurately determine the deflection between the substrate and the active layer substrate in the composite substrate. If the deflection angle is greater than the preset angle, the composite substrate is judged to be an unqualified product; if the deflection angle is less than or equal to the preset angle, the composite substrate is judged to be a qualified product, so that the qualified composite substrate is applied to downstream devices, thereby making full use of the specific crystal orientation of the active layer. In addition, downstream device manufacturers can also use specific crystal orientations according to the deflection angle. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1A is a schematic diagram of the structure of a wafer with a positioning edge;

[0026] Figure 1B is a schematic structural diagram of a wafer with positioning grooves;

[0027] Figure 1C Schematic diagram of the structure where the actual crystal plane deviates due to cutting error;

[0028] Figure 1D This is a schematic diagram of the structure of the composite substrate to be tested in Example 1 of the present application;

[0029] Figure 2A A schematic diagram of the workflow of a method for measuring a deflection angle of a composite substrate provided in Example 1 of the present application;

[0030] Figure 2B A schematic diagram of a measurement principle of a composite substrate deflection angle is provided for the first embodiment of the present application;

[0031] Figure 2C A front view of a composite substrate and a positioning fixture in a positioning state provided in Example 1 of the present application;

[0032] Figure 2D A top view of a composite substrate and a positioning fixture in a positioning state provided in Example 1 of the present application;

[0033] Figure 3A A schematic diagram of the structure of a composite substrate to be tested provided in Example 2 of the present application;

[0034] Figure 3B A schematic diagram of the workflow of a method for measuring a deflection angle of a composite substrate provided in Example 2 of the present application;

[0035] Figure 3C A schematic diagram of a structure in which a composite substrate provided in Example 2 of the present application is positioned on a sample stage;

[0036] Figure 3D A schematic diagram of the structure of a positioning fixture provided in Example 2 of the present application;

[0037] Figure 3E A schematic diagram of the structure of another positioning fixture provided in Example 2 of the present application;

[0038] Figure 3F A schematic diagram of the structure of another positioning fixture provided in Example 2 of the present application;

[0039] Figure 3G A schematic diagram of a measurement principle of a composite substrate deflection angle provided in Example 2 of the present application;

[0040] Figure 3H A schematic diagram of another measurement principle of the deflection angle of a composite substrate provided in Embodiment 2 of the present application.

[0041] Description of Reference Numerals

[0042] 01-wafer, 02-positioning edge, 03-positioning groove;

[0043] 1-sample stage, 2-X-ray source, 3-detector, 4-positioning fixture, 41-positioning side, 42-positioning angle;

[0044] 10 - base substrate, 20 - active layer substrate, 110 - first positioning edge, 120 - first positioning groove, 210 - second positioning edge. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0046] To facilitate the understanding of the technical solution of the present application, the positioning structure on the wafer is first described.

[0047] The positioning structure refers to a mark made on a wafer, which is used to characterize a specific crystal plane on the wafer. That is to say, based on the positioning structure made on the wafer, at least a specific crystal plane on the wafer can be known.

[0048] In one implementation, Figure 1A As shown, the positioning structure is a positioning edge 02, that is, a positioning edge 02 is cut on the wafer 01. It should be noted that the positioning edge 02 is not obtained by random cutting, but is generally cut so that the side where the positioning edge 02 is located after cutting is a specific crystal plane, so that the side where the positioning edge 02 is located after cutting can be used as a known crystal plane. For example, the crystal plane of the front surface of a single crystal silicon wafer is (100), and the crystal plane of the side where the cut positioning edge 02 is located is (110). Generally, wafers with smaller sizes are suitable for using positioning edges as positioning structures, such as wafers with a size of: 3 to 6 inches. The positioning edge can be a reference plane, a large cutting edge, a main positioning edge, or a secondary positioning edge.

[0049] In another implementation, Figure 1B As shown, the positioning structure is a positioning groove 03. Compared with the positioning structure of the positioning edge 02, the positioning groove 03 can reduce the area of ​​the wafer to be cut. Usually, a relatively large wafer is suitable for using the positioning groove 03 as a positioning structure, such as the size of the wafer: 8 inches, 12 inches. The positioning groove can also be called a V-groove or a notch. Among them, the method of positioning a specific crystal plane according to the positioning groove 03 is: the specific crystal plane is the side opposite to the positioning groove 03, that is, the side opposite to the symmetry line of the positioning groove (such as Figure 3G The side surface is perpendicular to the dotted line passing through the center of the circle), wherein the symmetry line of the positioning groove is on the same horizontal plane of the wafer, and the positioning groove 03 is symmetrical with the symmetry line of the positioning groove as the symmetry axis.

[0050] From the above introduction to the positioning structure, it can be known that the theoretical crystal plane of the wafer can be oriented according to the positioning structure on the wafer. However, in actual operation, due to the deviation when cutting the positioning structure, there may be a certain deviation between the theoretical crystal plane positioned by the positioning structure obtained by actual cutting and the actual crystal plane. For example, Figure 1C As shown, the solid line F represents the positioning edge obtained by actual cutting, the solid line Z represents the normal direction corresponding to the actual positioning edge, the dotted line F1 represents the actual crystal plane, and the dotted line Z1 represents the normal direction corresponding to the actual crystal plane. The angle between the dotted line Z1 and the solid line Z is the crystal plane error caused by cutting.

[0051] For composite substrates, during bonding, the first positioning edge 110 of the base substrate 10 is generally aligned with the second positioning edge 210 of the active layer substrate 20, and then the active layer substrate 20 is allowed to freely fall onto the base substrate 10 for bonding to complete the bonding step. However, under current process conditions, it is difficult to control the mechanical alignment error between the first positioning structure and the second positioning structure, as well as the error generated during the free fall of the active layer substrate onto the base substrate to zero. Therefore, the composite substrate obtained in the end may have not only cutting errors but also bonding errors. Figure 1D As shown, the first positioning edge 110 of the base substrate 10 is not aligned with the second positioning edge 210 of the active layer substrate 20. The dotted line Z2 represents the normal direction of the first positioning edge 110 of the base substrate 10, the solid line Z represents the normal direction of the positioning edge 210 actually obtained in the active layer substrate 20, and the dotted line Z1 represents the normal direction of the actual crystal plane in the active layer substrate 20. For ease of description, the dotted line Z2 is referred to as the theoretical normal direction, the dotted line Z1 is referred to as the actual normal direction, and the corresponding crystal plane perpendicular to the theoretical normal Z2 is referred to as the theoretical crystal plane ( Figure 1D The side where the first positioning edge is located shown in FIG), and the crystal plane perpendicular to the actual normal Z1 is called the actual crystal plane ( Figure 2B Active layer substrate lattice plane M shown in FIG.

[0052] During the use of the composite substrate, the first positioning edge 110 of the base substrate 10 is usually used as the positioning reference, that is, the side where the first positioning edge 110 is located is the theoretical crystal plane of the composite substrate. However, due to cutting errors and bonding errors, there is a deviation between the theoretical crystal plane of the composite substrate and the actual crystal plane. Figure 1D , the deviation between the theoretical normal direction Z2 and the actual normal direction Z1 can reflect the deviation between the theoretical crystal plane and the actual crystal plane of the composite substrate. Therefore, when the prepared composite substrate is applied to downstream devices, it is very necessary to provide a method for determining the deviation between the theoretical crystal plane and the actual crystal plane in the composite substrate by taking the first positioning structure of the base substrate 10 as a reference.

[0053] Based on this, the present application provides a method for measuring the deflection angle of a composite substrate. By measuring the deflection angle of the composite substrate, the deviation between the theoretical crystal plane and the actual crystal plane is determined. If the deflection angle is greater than a preset angle, the composite substrate is judged to be an unqualified product; if the deflection angle is less than or equal to the preset angle, the composite substrate is judged to be a qualified product, and can be applied to downstream devices.

[0054] A method for measuring the deflection angle of a composite substrate provided in the present application is introduced below in conjunction with the accompanying drawings.

[0055] Embodiment 1

[0056] A method for measuring the deflection angle of a composite substrate provided in the first embodiment of the present application is as follows: Figure 2A As shown, the following steps are included:

[0057] Step 1: Using the first positioning edge 110 of the base substrate in the composite substrate to be tested as a reference, the composite substrate to be tested is positioned on the sample stage 1 .

[0058] like Figure 1D As shown, the composite substrate to be tested includes a base substrate 10 and an active layer substrate 20, wherein the base substrate 10 and the active layer substrate 20 are bonded to form the composite substrate to be tested. The base substrate 10 has a first positioning edge 110, and the active layer substrate 20 has a second positioning edge 210. Figure 1D It can be seen that the first positioning edge 110 and the second positioning edge 210 are not completely aligned, and there is a certain deviation, which is caused by the bonding error between the base substrate 10 and the active layer substrate 20 .

[0059] X-ray orientation meter is a device that measures crystal structure based on the principle of X-ray diffraction. Figure 2B As shown, the X-ray orientation instrument includes a rotatable sample stage 1 ( Figure 2B Not shown, see Figure 2C), X-ray source 2, detector 3, microammeter (not shown) and goniometer (not shown). The working principle of the X-ray direction finder is: high voltage electricity generates X-rays on the X-ray tube, and the X-rays are irradiated on the sample to be tested on the sample stage 1. When the Bragg equation 2dsinθ=nλ is met, diffraction is generated, wherein the diffraction intensity is displayed by the microammeter connected to the detector 3, so that the maximum diffraction intensity can be found through the microammeter. Among them, Figure 2B As shown, the sample stage 1 rotates with the intersection of the incident line and the reflected line of the X-ray as the rotation center. Correspondingly, a rotating shaft for driving the sample stage 1 to rotate is arranged below the rotation center.

[0060] It should be noted that the present application not only takes into account the error caused by the cutting and positioning structure of the active layer substrate 20 itself, but also takes into account the error caused when the base substrate 10 and the active layer substrate 20 in the composite substrate are bonded. Therefore, the present application uses the first positioning edge 110 of the base substrate in the composite substrate to be tested as a reference to position the composite substrate to be tested on the sample stage.

[0061] It should be further explained that, in the first embodiment of the present application, the first positioning edge 110 of the base substrate in the composite substrate to be tested is used as a reference to position the composite substrate to be tested on the sample stage, which means that after the composite substrate to be tested is placed on the sample stage, the first positioning edge 110 of the base substrate in the composite substrate to be tested falls directly above the rotation axis. In this way, when the composite substrate to be tested rotates with the sample stage, it is equivalent to rotating around the rotation axis with the first positioning edge 110 of the base substrate as a reference, and then the angle rotated by the rotation axis is the angle between the starting position and the ending position of the first positioning edge 110 of the base substrate.

[0062] The present application does not limit the method for positioning the first positioning edge 110 of the substrate. In one implementation, the first positioning edge 110 of the substrate can be positioned at a position corresponding to the rotation axis on the sample stage by an optical positioning method. In another implementation, Figure 2C and Figure 2D As shown, in the embodiment of the present application, in order to locate the first positioning edge 110 of the base substrate in the composite substrate to be tested, a positioning fixture 4 is additionally provided to cooperate with the sample stage 1, and the positioning fixture is located on the side of the sample stage 1. The positioning fixture 4 has a positioning side surface 41, and the positioning side surface 41 is arranged toward the sample stage, wherein the position of the positioning side surface 41 satisfies that: after the first positioning edge 110 is abutted against the positioning side surface 41, the first positioning edge 110 falls directly above the rotating shaft.

[0063] During measurement, the first positioning edge 110 of the base substrate 10 is abutted against the positioning side surface 41 of the positioning fixture 4, and the active layer substrate 20 is completely located above the horizontal plane where the top surface of the positioning fixture 4 is located, that is, the bonding surface of the base substrate 10 and the active layer substrate 20 is located above the horizontal plane where the top surface of the positioning fixture 4 is located, or the bonding surface of the base substrate 10 and the active layer substrate 20 is aligned with the horizontal plane where the top surface of the positioning fixture 4 is located. In this way, on the one hand, the side where the second positioning edge 210 of the active layer substrate 20 is located can be completely exposed so that X-rays can irradiate the side where the second positioning edge 210 is located; on the other hand, the positioning fixture can realize rotation measurement with the base substrate as the positioning reference.

[0064] It should be noted that the positioning fixture 4 in the present application can rotate coaxially with the sample stage 1, but the present application does not limit the implementation method of the coaxial rotation of the positioning fixture 4 and the sample stage 1, for example, the positioning fixture 4 and the sample stage 1 are fixed together directly or through a connecting piece.

[0065] Step 2, placing the detector 3 at the position 2θ2, wherein θ2 represents the theoretical value of the Bragg angle of the target crystal plane, wherein the target crystal plane is the side where the second positioning edge 210 of the active layer substrate 20 is located. It should be noted that step 2 can also be placed before step 1, which is not limited here.

[0066] From the above description of the positioning structure, it can be seen that the side surface where the second positioning edge 210 of the active layer substrate 20 is located is a known crystal plane. Therefore, the present application is different from the conventional method of using the front surface of the wafer as the target crystal plane for measurement. Instead, it cleverly uses the side surface where the second positioning edge 210 is located as the target crystal plane for measurement. In this way, combined with the positioning of the first positioning edge 110 by the positioning fixture 4, the rotation angle of the sample stage is the deflection angle based on the first positioning edge 110.

[0067] Please continue to attach Figure 2B After positioning the sample to be tested on the sample stage 1 by the positioning fixture 4, the position of the detector 3 is first adjusted to place the detector 3 at the 2θ2 position, wherein the 2θ2 position refers to the angle between the reflection line reflected to the detector 3 and the extension line of the X-ray after the X-ray irradiates the side where the second positioning edge 210 of the active layer substrate 20 on the sample stage 1 is located, and is 2θ2. When the detector 3 is placed at the 2θ2 position, the starting position of the goniometer in the X-ray orientation instrument is on the extension line of the X-ray, and at this time, the angle corresponding to the goniometer is 0°. Figure 2B In the figure, the parallel lines M represent the active layer substrate lattice planes.

[0068] It should be noted that θ2 can be directly found in reference books, or can be calculated. For example, the crystal plane on the side where the second positioning edge of silicon is located is (110), and the theoretical value θ2 of the Bragg angle of the target crystal plane can be calculated based on the lattice constant and crystal structure of silicon and the Bragg equation 2dsinθ2=nλ, where λ is the X-ray wavelength, d is the interplanar spacing of the crystal plane, and n is the diffraction order.

[0069] It should also be noted that the present application does not limit the detector 3, and it may be, for example, a Geiger counter, etc.

[0070] Step 3: Rotate the sample stage 1 until the maximum X-ray diffraction intensity is measured, and obtain the angle measurement value θ1 corresponding to the position.

[0071] Rotate the sample stage 1 and measure the maximum X-ray diffraction intensity by monitoring the diffraction intensity displayed by the microammeter. After measuring the maximum X-ray diffraction intensity, stop rotating the sample stage and record the angle measurement value θ1 corresponding to the goniometer at the current position. Figure 2B As shown, the angle measurement value θ1 represents that the actual crystal plane in the source layer substrate 20 is measured to produce the maximum diffraction intensity after rotating the angle θ1 with the extension line of the X-ray as the starting position, that is, the crystal plane that satisfies the Bragg equation.

[0072] Step 4: Calculate the composite substrate deflection angle α, where the composite substrate deflection angle α is the difference between the theoretical value θ2 of the Bragg angle and the angle measurement value θ1.

[0073] like Figure 2B As shown, the difference between the theoretical value θ2 of the Bragg angle and the measured angle value θ1 is the angle α between the theoretical crystal plane (the side where the first positioning edge of the substrate is located) and the actual crystal plane. This application refers to the angle α as the deflection angle of the composite substrate.

[0074] Continue to combine Figure 1D In the composite substrate, the crystal plane perpendicular to the theoretical normal Z2 is called the theoretical crystal plane, and the crystal plane perpendicular to the actual normal Z1 is called the actual crystal plane. In this way, the deflection angle α of the composite substrate calculated by this application can reflect Figure 1D In the figure, the angle between Z1 and Z2 can also reflect the deviation between the theoretical crystal plane and the actual crystal plane. Therefore, the composite substrate deflection angle α calculated in the present application reflects both the bonding deviation between the base substrate 10 and the active layer substrate 20 and the error caused by the cutting and positioning structure of the active layer substrate 20 itself. Thus, the deflection between the base substrate and the active layer substrate in the composite substrate can be accurately determined.

[0075] It should be noted that the deflection angle α in the present application can be obtained by subtracting the measured value θ1 from the theoretical value θ2, or by subtracting the theoretical value θ2 from the measured value θ1, and the present application does not limit this. In the embodiment of the present application, the deflection angle α is equal to the theoretical value θ2 minus the measured value θ1 for explanation. In this case, a positive value of the composite substrate deflection angle α indicates that the target crystal plane of the active layer substrate is deflected clockwise, and a negative value indicates that the target crystal plane of the active layer substrate is deflected counterclockwise.

[0076] It should be noted that the above description only takes the substrate and the active layer substrate as a single-layer structure as examples, and does not limit the structure of the composite substrate to be measured. The measurement object of the measurement method provided by the present application is not limited to the composite substrate with a two-layer structure, but can also be a structure with more layers. For example, the substrate can be a single-layer or multi-layer structure, such as the substrate includes a substrate wafer with a first positioning edge, and a first isolation layer deposited on the substrate wafer; for another example, the active layer substrate can be a single-layer or multi-layer structure, such as the active layer substrate includes a lithium niobate wafer with a second positioning edge, and a second isolation layer combined with the lithium niobate wafer.

[0077] It should also be noted that the bonding method between the substrate substrate and the active layer substrate described in the present application can be formed by surface activation, organic bonding or physical bonding, and the present application is limited to this. For example, in one implementation, the bonding surfaces of the substrate substrate and the active layer substrate are cleaned and activated, and directly combined under certain conditions, and the bonding surfaces of the substrate substrate and the active layer substrate are bonded into one by van der Waals force, molecular force or even atomic force. Specifically, ozone water treatment, ultraviolet ozone treatment, ion beam treatment and plasma treatment can be used for the bonding surface. The following is an explanation with a specific measurement example.

[0078] Measurement Example (I)

[0079] In the measurement embodiment (I), the base substrate 10 of the composite substrate to be measured is a single-layer silicon wafer, and the active layer substrate 20 is also a single-layer silicon wafer, wherein the theoretical crystal plane of the front surface of the active layer substrate 20 is (100), and the theoretical crystal plane of the second positioning edge of the active layer substrate 20 is (110). In this way, according to the theoretical crystal plane (110) of the second positioning edge, the corresponding theoretical value θ2 of the Bragg angle can be queried to be 23 degrees and 39 minutes.

[0080] Using the measurement method provided in the above embodiment, the angle measurement value θ1 corresponding to the position of the maximum X-ray diffraction intensity is measured to be 23 degrees 31 minutes, and the deflection angle α of the composite substrate is 8 minutes, which is the difference between θ2 and θ1. This indicates that when the first positioning edge of the base substrate is used as a reference, the actual crystal plane positioned by the second positioning edge of the active layer substrate is deflected by 8 minutes in the clockwise direction.

[0081] Measurement Example (II)

[0082] In the measurement embodiment (two), the base substrate 10 of the composite substrate to be tested is a composite structure of a stacked silicon oxide wafer and a silicon wafer, and the active layer substrate 20 is a single-layer lithium niobate wafer, wherein the theoretical crystal plane of the front surface of the active layer substrate 20 is the X tangent, and the theoretical crystal plane of the second positioning edge of the active layer substrate 20 is the Z tangent. In this way, according to the theoretical crystal plane Z tangent of the second positioning edge, the corresponding theoretical value θ2 of the Bragg angle can be queried to be 19 degrees and 29 minutes.

[0083] Using the measurement method provided in the above embodiment, the angle measurement value θ1 corresponding to the position of the maximum X-ray diffraction intensity is measured to be 19 degrees 56 minutes 5 seconds. The deflection angle α of the composite substrate is the difference between θ2 and θ1 -27 minutes 5 seconds, indicating that when the first positioning edge of the base substrate is used as a reference, the actual crystal plane positioned by the second positioning edge of the active layer substrate is deflected counterclockwise by 27 minutes 5 seconds.

[0084] Measurement Example (III)

[0085] In the measurement embodiment (three), the base substrate 10 in the composite substrate to be tested is a composite structure of a stacked silicon oxide wafer and a silicon wafer, and the active layer substrate 20 is a single-layer lithium tantalate wafer, wherein the theoretical crystal plane of the front surface of the active layer substrate 20 is the Y42 tangent, and the theoretical crystal plane of the second positioning edge of the active layer substrate 20 is the X tangent. In this way, according to the theoretical crystal plane X tangent of the second positioning edge, the corresponding theoretical value θ2 of the Bragg angle can be calculated to be 17 degrees and 27 minutes.

[0086] Using the measurement method provided in the above embodiment, the angle measurement value θ1 corresponding to the position of the maximum X-ray diffraction intensity is measured to be 17 degrees 28 minutes 1 second, and the deflection angle α of the composite substrate is the difference between θ2 and θ1 -1 minute 1 second, indicating that when the first positioning edge of the base substrate is used as a reference, the actual crystal plane positioned by the second positioning edge of the active layer substrate is deflected counterclockwise by 1 minute 1 second.

[0087] It can be seen from the three measurement embodiments listed above that the measurement method provided in the embodiments of the present application can accurately calculate the deflection angle of the composite substrate, for example, to within seconds.

[0088] Embodiment 2

[0089] The second embodiment of the present application is basically the same as the first embodiment, except that the positioning structure in the composite substrate to be tested in the second embodiment of the present application includes a positioning groove. For example, the positioning structure of the base substrate 10 in the composite substrate is the first positioning groove 120, and the positioning structure of the active layer substrate 20 is the second positioning groove; for another example, Figure 3AAs shown, in the composite substrate, the positioning structure of the base substrate 10 is the first positioning groove 120 , and the positioning structure of the active layer substrate 20 is the second positioning edge 210 .

[0090] The composite substrates corresponding to the above two implementations can adopt the following measurement methods. For the convenience of explanation, Figure 3A The composite substrate shown is exemplified as a composite substrate to be tested.

[0091] like Figure 3B As shown, the method for measuring the deflection angle of the composite substrate provided in the second embodiment of the present application includes the following steps:

[0092] Step 10: Using the first positioning groove 120 of the base substrate in the composite substrate to be tested as a reference, the composite substrate to be tested is positioned on the sample stage.

[0093] It should be noted that in the second embodiment of the present application, the first positioning groove 120 of the base substrate in the composite substrate to be tested is used as a reference to position the composite substrate to be tested on the sample stage. Figure 3G As shown, after the composite substrate to be tested is placed on the sample stage, the side of the composite substrate to be tested that is directly opposite to the first positioning groove 120 of the base substrate is located directly above the rotating shaft; Figure 3H As shown, after the composite substrate to be tested is placed on the sample stage, the intersection of the positioning groove symmetry line of the first positioning groove 120 and the second positioning edge 210 is located directly above the rotation axis. In this way, when the composite substrate to be tested rotates with the sample stage, it is equivalent to rotating around the rotation axis with the first positioning groove 120 of the base substrate as a reference, and then the angle rotated by the rotation axis is the angle between the starting position and the ending position of the first positioning groove 120 of the base substrate.

[0094] The present application does not limit the method for positioning the first positioning groove 120 of the substrate. In one implementation, the first positioning groove 120 of the substrate can be positioned at a position corresponding to the rotation axis on the sample stage by an optical positioning method. In another implementation, Figure 3C As shown, the composite substrate to be tested is placed on a sample stage 1 with a positioning fixture of an X-ray orientation instrument, wherein the composite substrate to be tested includes a base substrate 10 and an active layer substrate 20, wherein the base substrate 10 has a first positioning groove 120, and the active layer substrate 20 has a second positioning edge 210, and the first positioning groove 120 and the second positioning edge 210 are on the same side, wherein the first positioning groove 120 of the base substrate 10 abuts against the positioning angle 42 of the positioning fixture 4, and the active layer substrate 20 is completely located above the horizontal plane where the top surface of the positioning fixture 4 is located.

[0095] like Figure 3DAs shown, in the second embodiment of the present application, in order to position the base substrate 10 having the second positioning groove 120 , a positioning fixture having a positioning angle 42 is used to cooperate with the sample stage 1 to position the base substrate 10 .

[0096] The present application does not limit the structure of the positioning fixture having the positioning angle 42. In one implementation, Figure 3D As shown, the positioning fixture 4 is a groove structure formed on the sample stage 1, and a positioning angle 42 is provided on the inner side wall of the positioning fixture 4, and the positioning angle 42 is used to abut against the positioning groove on the substrate to achieve positioning. It should be noted that this application is only based on Figure 3D The structure of the positioning fixture 4 shown is for illustration only and does not limit the position of the positioning fixture 4 on the sample stage 1. It is sufficient to ensure that the target crystal plane can be exposed after the composite substrate to be tested is placed on the sample stage 1. For example, the position on the positioning fixture 4 that is opposite to the positioning angle 42 can be tangent to or intersect with the edge of the sample stage 1. Figure 3D It shows the situation that the position on the positioning fixture 4 that is opposite to the positioning angle 42 is tangent to the edge of the sample stage 1; Figure 3E The position on the positioning fixture 4 that is opposite to the positioning angle 42 intersects with the edge of the sample stage 1. In this way, after the composite substrate to be tested is placed on the sample stage, the side of the active layer substrate that is 180 degrees from the first positioning groove 120 can be exposed to facilitate the execution of subsequent steps.

[0097] In another implementation, the positioning fixture 4 and the sample stage 1 are detachably matched, such as Figure 3F As shown, the sample stage 1 has a groove structure, which is used to place the composite substrate to be tested, and the positioning fixture 4 is provided with a positioning angle 42 that matches the first positioning groove on the base substrate. In this way, after the composite substrate to be tested is placed on the sample stage 1, the base substrate in the composite substrate to be tested is positioned by the positioning fixture 4 with the positioning angle 42, and the positioning fixture can be removed after positioning is completed. In this implementation, the positioning fixture 4 will not block the target crystal plane, so there is no need to limit the height of the positioning fixture 4.

[0098] Step 20, placing the detector 3 at the position of 2θ2, wherein θ2 represents the theoretical value of the Bragg angle of the target crystal plane, wherein the target crystal plane is the side of the active layer substrate that is 180 degrees to the first positioning groove, or the target crystal plane is the side of the active layer substrate where the second positioning edge is located. It should be noted that step 20 can also be placed before step 10, which is not limited here.

[0099] like Figure 3G and Figure 3H As shown, Figure 3G The scheme of measuring with the side surface of the active layer substrate at an angle of 180 degrees to the first positioning groove as the target crystal plane is shown. Figure 3HThe scheme of measuring with the side surface where the second positioning edge of the active layer substrate is located as the target crystal plane is shown, wherein: Figure 3H The solution of measuring with the side surface where the second positioning edge of the active layer substrate is located as the target crystal plane can be referred to in the above-mentioned embodiment 1, and will not be described in detail here.

[0100] for Figure 3G In the measurement scheme shown, it should be noted that the side surface of the active layer substrate 20 that is at an angle of 180 degrees to the first positioning groove 120 refers to the side surface of the active layer substrate 20 that is directly opposite to the first positioning groove 120 .

[0101] Step 30, rotate the sample stage 1 until the maximum X-ray diffraction intensity is measured, and obtain the angle measurement value θ1 corresponding to the position.

[0102] For step 30, please refer to the description of step 3 in embodiment 1, which will not be repeated here.

[0103] Step 40, calculating the composite substrate deflection angle α, wherein the composite substrate deflection angle α is the difference between the theoretical value θ2 of the Bragg angle and the angle measurement value θ1.

[0104] In summary, the measurement method provided in the second embodiment of the present application is basically the same as the measurement method provided in the first embodiment, except that the target crystal plane used in the second embodiment of the present application is different from the target crystal plane in the first embodiment, but the measurement principle is the same. For the description of the angle measurement value θ1 and the theoretical value θ2 of the Bragg angle, and the deflection angle α of the composite substrate, please refer to the description in the embodiment, which will not be repeated here.

[0105] The following is a description of a specific measurement example.

[0106] Measurement Example (IV)

[0107] In the measurement example (four), the base substrate 10 of the composite substrate to be measured is a single-layer silicon wafer, and the active layer substrate 20 is also a single-layer silicon wafer, wherein the theoretical crystal plane of the front surface of the active layer substrate 20 is (100), and the theoretical crystal plane of the second positioning edge of the active layer substrate 20 is (110). In this way, according to the theoretical crystal plane (110) of the second positioning edge, the corresponding theoretical value θ2 of the Bragg angle can be calculated to be 23 degrees and 39 minutes.

[0108] Using the measurement method provided in the above-mentioned embodiment 2, the angle measurement value θ1 corresponding to the position of the maximum X-ray diffraction intensity is measured to be 23 degrees 28 minutes, and the deflection angle α of the composite substrate is 11 minutes, which is the difference between θ2 and θ1. This indicates that when the first positioning edge of the base substrate is used as a reference, the actual crystal plane positioned by the second positioning edge of the active layer substrate is deflected by 11 minutes in the clockwise direction.

[0109] Embodiment 3

[0110] The third embodiment of the present application is basically the same as the first embodiment, except that in the third embodiment of the present application, the positioning structure of the base substrate 10 in the composite substrate to be tested is the first positioning edge 110, and the positioning structure of the active layer substrate 20 is the second positioning groove.

[0111] The steps for measuring the deflection angle of the composite substrate to be measured in the third embodiment can refer to the first and second embodiments, which will not be described again here. The difference lies in the target crystal plane and positioning method used in the above measurement.

[0112] In the method for measuring the deflection angle of the composite substrate to be tested provided in the third embodiment of the present application, the optical positioning method or positioning fixture provided in the first embodiment can be used to position the positioning structure of the base substrate 10 as the first positioning edge 110. After the composite substrate to be tested is placed on the sample stage, the side of the composite substrate to be tested that is directly opposite to the first positioning edge 110 of the base substrate falls directly above the rotating shaft. Correspondingly, the target crystal plane is the side of the active layer substrate that is parallel to the first positioning edge 110 and away from the first positioning edge 110.

[0113] Embodiment 4

[0114] First of all, it should be explained that after measuring the deflection angle of the composite substrate using the measurement method provided in the above-mentioned embodiment 1, embodiment 2 or embodiment 3, on the one hand, the measured deflection angle of the composite substrate can be used to detect whether the prepared composite substrate is qualified, that is, the deflection of the theoretical crystal plane and the actual crystal plane can be determined; on the other hand, when the composite substrate is used to prepare the target device, the actual crystal plane position can be determined according to the measured deflection angle of the composite substrate, and then the composite substrate can be processed based on the actual crystal plane position to obtain a device with the best crystal orientation. Among them, the device refers to the downstream device using the composite substrate, such as surface wave device, filter, photoelectric conversion device, etc.

[0115] The following is a description of a device manufacturing method provided in Example 4 of the present application.

[0116] First, the deflection angle of the composite substrate is measured using the measurement method provided in the first embodiment, the second embodiment or the third embodiment.

[0117] Then, according to the positioning structure of the base substrate in the composite substrate and the deflection angle of the composite substrate, the actual crystal plane of the active layer substrate in the composite substrate is positioned.

[0118] In one implementation, if the composite substrate deflection angle α is a positive value, the actual crystal plane in the active layer substrate is deflected by |α| in the clockwise direction with the substrate substrate positioning structure as a reference; if the composite substrate deflection angle α is a negative value, the actual crystal plane in the active layer substrate is deflected by |α| in the counterclockwise direction with the substrate substrate positioning structure as a reference. In this way, when using the composite substrate to make a target device, the positioning structure of the substrate substrate in the composite substrate can be used as a reference to deflect |α| clockwise or counterclockwise to determine the actual crystal plane position of the active layer substrate in the composite substrate. In this way, in the subsequent processing steps of the composite substrate, the composite substrate can be processed according to the position of the deflected composite substrate, that is, the composite substrate can be processed with the actual crystal plane position as a reference to prepare the target device. The target device manufactured in this way is equivalent to utilizing the optimal crystal orientation of the active layer substrate, thereby improving the performance of the target device.

[0119] The processing of the composite substrate includes photolithography, etching, grinding, etc., which is not limited in the present application.

[0120] In another implementation, taking photolithography as an example, the deflection angle position of the composite substrate can be directly photolithographically processed. In this implementation, after locating the actual crystal plane of the active layer substrate in the composite substrate by using the positioning structure of the substrate in the composite substrate and the deflection angle of the composite substrate, the actual crystal plane crystal orientation located is directly photolithographically processed. In this way, the calibration accuracy and processing efficiency in the manufacturing process can be improved.

[0121] In addition, the present application may repeat reference numerals and / or letters in different examples. This repetition is for the purpose of simplicity and clarity, and does not in itself indicate the relationship between the various embodiments and / or settings discussed.

[0122] It should also be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusions.

[0123] The present application is described in detail above in conjunction with specific implementation methods and exemplary examples, but these descriptions cannot be understood as limiting the present application. Those skilled in the art understand that, without departing from the spirit and scope of the present application, a variety of equivalent replacements, modifications or improvements can be made to the technical solution of the present application and its implementation methods, all of which fall within the scope of the present application. The scope of protection of the present application shall be subject to the attached claims.

Claims

1. A method for measuring the deflection angle of a composite substrate, characterized in that: include: Taking the positioning structure of the base substrate in the composite substrate to be tested as a reference, the composite substrate to be tested is positioned on a sample stage, and the sample stage rotates with the intersection of the incident ray and the reflected ray of the X-ray as the rotation center, and a rotating shaft for driving the sample stage to rotate is provided below the rotation center; If the positioning structure of the substrate is a first positioning edge, the first positioning edge of the substrate in the composite substrate to be tested is made to fall directly above the rotating shaft; If the positioning structure of the base substrate is a first positioning groove, the side surface of the composite substrate to be tested that is directly opposite to the first positioning groove of the base substrate is located directly above the rotating shaft; placing the detector at a position of 2θ2, wherein θ2 represents a theoretical value of a Bragg angle of a target crystal plane, wherein the target crystal plane is a known side crystal plane of the active layer substrate; Rotate the sample stage until the maximum X-ray diffraction intensity is measured, and obtain the angle measurement value θ1 corresponding to the position; The composite substrate deflection angle α is calculated, where the composite substrate deflection angle α is the difference between the theoretical value θ2 of the Bragg angle and the measured angle value θ1.

2. The measuring method according to claim 1, characterized in that: If the positioning structure of the base substrate is a first positioning edge, and the positioning structure of the active layer substrate is a second positioning edge, then the target crystal plane is the side surface where the second positioning edge of the active layer substrate is located.

3. The measuring method according to claim 1, characterized in that: If the positioning structure of the base substrate is a first positioning groove, and the positioning structure of the active layer substrate is a second positioning groove; or, if the positioning structure of the base substrate is a first positioning groove, and the positioning structure of the active layer substrate is a second positioning edge; then the target crystal plane is the side surface of the active layer substrate that is 180 degrees to the first positioning groove, or, the target crystal plane is the side surface of the active layer substrate where the second positioning edge is located; If the positioning structure of the base substrate is a first positioning edge and the positioning structure of the active layer substrate is a second positioning groove, the target crystal plane is a side surface of the active layer substrate parallel to the first positioning edge and away from the first positioning edge.

4. The method according to claim 2 or 3, characterized in that: If the positioning structure of the substrate is a first positioning edge, it also includes a positioning fixture having a positioning side that cooperates with the sample stage. The positioning fixture is located on the side of the sample stage, the positioning side faces the direction of the sample stage, and the positioning side is used to abut against the first positioning edge on the substrate.

5. The method according to claim 3, characterized in that: If the positioning structure of the substrate is a first positioning groove, a positioning fixture having a positioning angle matched with the sample stage is also included, and the positioning angle is used to abut against the first positioning groove on the substrate.

6. The measuring method according to claim 1, characterized in that: The substrate is a single-layer structure or a multi-layer composite structure.

7. The measuring method according to claim 1, characterized in that: The active layer substrate is a single-layer structure or a multi-layer composite structure.

8. A device manufacturing method, characterized in that: include The deflection angle of the composite substrate is obtained by using the method for measuring the deflection angle of the composite substrate as claimed in claim 1; Positioning the actual crystal plane of the active layer substrate in the composite substrate according to the positioning structure of the base substrate in the composite substrate and the deflection angle of the composite substrate; The composite substrate is processed based on the actual crystal plane to manufacture a target device.

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