Semiconductor component, plasma processing device and corrosion-resistant coating forming method

Abstract

A semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, wherein the semiconductor component comprises: a semiconductor component body; a corrosion-resistant coating, located on the surface of the semiconductor component body, composed of a crystalline phase and an amorphous phase of a rare earth element fluoride oxide, and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase. The semiconductor component can reduce particle contamination problems when used in advanced processes.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating. Background Art

[0002] Plasma etching technology plays a key role in the field of integrated circuit manufacturing. In the latest 5nm process, the number of plasma etching process steps has increased to more than 17%. The substantial increase in the power and steps of advanced etching processes requires that the components in the plasma etching chamber have higher resistance to plasma physical bombardment and chemical corrosion, produce less micro-particle pollution and metal pollution sources, and further ensure the stability and repeatability of the etching equipment process.

[0003] At present, in the process of 5nm or 3nm and below, there are stringent particle contamination requirements. In addition to requiring less than 10 particles smaller than 28nm throughout the life cycle of the entire component, the lower the ground contact rate, the better, that is, the probability of 0@28nm particles. In order to meet the ever-shrinking line width requirements, the power and steps used in the plasma etching process have been greatly improved. However, the current coatings gradually fail in advanced processes (5nm and below), and there is tiny particle contamination, which cannot meet the needs of advanced processes well. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, so as to reduce particle contamination in advanced processes.

[0005] In order to solve the above technical problems, the present invention provides a semiconductor component, including: a semiconductor component body; a corrosion-resistant coating, located on the surface of the semiconductor component body, composed of a crystalline phase and an amorphous phase of a rare earth element fluoride oxide, and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase.

[0006] Optionally, the corrosion-resistant coating is a crystalline structure.

[0007] Optionally, the rare earth element of the rare earth element fluoride oxide of the corrosion-resistant coating includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.

[0008] Optionally, the rare earth element of the crystalline phase and the amorphous phase of the same layer is the same.

[0009] Optionally, the rare earth elements of the crystalline phase and the amorphous phase of the same layer are different.

[0010] Optionally, the corrosion-resistant coating has a thickness of 0.01 micrometer to 200 micrometers.

[0011] Optionally, the amorphous phase is located on the surface of the crystalline phase and in the body of the crystalline phase.

[0012] Optionally, the material of the semiconductor component body includes at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramics, etc.

[0013] Optionally, the density of the corrosion-resistant coating is 98% to 100%.

[0014] Correspondingly, the present invention also provides a plasma processing device, comprising: a reaction chamber, which contains a plasma environment; the above-mentioned semiconductor component is located in the reaction chamber and exposed to the plasma environment.

[0015] Optionally, the plasma environment includes at least one of fluorine, chlorine or oxygen.

[0016] Optionally, the plasma processing device is a plasma etching device or a plasma cleaning device.

[0017] Optionally, when the plasma etching device is an inductively coupled plasma etching device, the components include: at least one of a ceramic plate, an inner sleeve, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic suction cup assembly, a covering ring, a focusing ring, an insulating ring and a plasma confinement device.

[0018] Optionally, when the plasma etching device is a capacitively coupled plasma etching device, the components include: a shower head, an upper grounding ring, a movable ring, a gas distribution plate, a gas buffer plate, an electrostatic suction cup assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, a liftable isolation ring or at least one of a plasma confinement device.

[0019] Optionally, the reaction chamber further includes: a base for supporting a substrate to be processed, wherein the substrate to be processed is exposed to the plasma environment; there are multiple semiconductor components, which are respectively located at the top of the reaction chamber, the side walls of the reaction chamber and the periphery of the base, and the relationship between the fluorine content in the corrosion-resistant coating of the semiconductor components at different positions is as follows: the fluorine content in the corrosion-resistant coating of the semiconductor components at the top of the reaction chamber is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the side walls of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor components on the side walls of the reaction chamber is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the periphery of the base.

[0020] Correspondingly, the present invention also provides a method for forming a corrosion-resistant coating on a semiconductor component body, comprising: providing a semiconductor component body; and forming the above-mentioned corrosion-resistant coating on the semiconductor component body.

[0021] Optionally, the method for forming the corrosion-resistant coating includes: placing a semiconductor component body in a vacuum chamber; arranging a rare earth fluorine-containing target material and a rare earth oxygen-containing target material relative to the semiconductor component body; after arranging the rare earth fluorine-containing target material and the rare earth oxygen-containing target material relative to the semiconductor component body, heating the semiconductor component body to excite the target material to form a molecular flow, and introducing fluorine-containing and oxygen-containing process gases into the vacuum reaction chamber, wherein the molecular flow and process gas form a corrosion-resistant coating composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body.

[0022] Optionally, the atomic ratio of the fluorine-containing process gas to the oxygen-containing process gas is adjusted so that the atomic ratio of the fluorine-containing process gas to the oxygen-containing process gas is 3:7 to 7:3.

[0023] Optionally, the distance between the rare earth fluorine target and the rare earth oxygen target and the height from the rare earth fluorine target and the rare earth oxygen target to the semiconductor component body are set to be between 1:1 and 1:20; the height range is: 10 cm to 2 meters.

[0024] Optionally, the excitation power ratio of the fluorine-containing target and the oxygen-containing target is adjusted to be between 1:1 and 1:20.

[0025] Optionally, the amorphous phase is used to adjust the fluorine content in the corrosion-resistant coating.

[0026] Optionally, the atomic percentage content of fluorine in the corrosion-resistant coating is 5% to 90%.

[0027] Optionally, the formation process of the corrosion-resistant coating includes: at least one of a physical vapor deposition process, a chemical vapor deposition process and an atomic layer deposition process.

[0028] Optionally, the method further includes: utilizing an auxiliary enhancement source to perform enhancement treatment on the plasma; the auxiliary enhancement source includes: at least one of a plasma source, an ion beam source, a microwave source and a radio frequency source.

[0029] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0030] In the semiconductor component provided by the technical solution of the present invention, the surface of the semiconductor component body has a corrosion-resistant coating, and the crystalline phase in the corrosion-resistant coating is used to make the corrosion-resistant coating have better stability; the amorphous phase has a long-range disordered network structure feature, so that the amorphous phase can withstand greater internal stress than the crystalline phase, and the same layer has both crystalline phase and amorphous phase, which reduces the internal stress of the corrosion-resistant coating and is beneficial to increasing the service life of the corrosion-resistant coating; further, under the premise of maintaining the stable crystalline structure of the overall corrosion-resistant coating, the amorphous phase regulates the F content in the corrosion-resistant coating, and further, components coated with coatings with different F contents can be designed according to the intensity of the F plasma in the etching chamber, thereby reducing the risk of the coating being locally preferentially corroded in the etching chamber to form tiny particle pollutants, thereby improving the process application level. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic structural diagram of a plasma processing device of the present invention;

[0032] Figure 2 It is a structural schematic diagram of a semiconductor component of the present invention;

[0033] Figure 3 It is a schematic diagram of the positions of different semiconductor components in the reaction chamber of the present invention;

[0034] Figure 4 It is a process flow chart of forming a corrosion-resistant coating on the surface of a semiconductor component body according to the present invention;

[0035] Figure 5 It is a schematic diagram of a device for forming a corrosion-resistant coating by utilizing a physical vapor deposition process according to the present invention. DETAILED DESCRIPTION

[0036] The technical solution of the present invention provides a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, wherein the semiconductor component comprises: a semiconductor component body; a corrosion-resistant coating, located on the surface of the semiconductor component body, composed of a crystalline phase and an amorphous phase of a rare earth element fluoride oxide, and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase. The semiconductor component can reduce particle contamination in advanced processes.

[0037] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0038] The plasma processing device of the present invention is a plasma etching device or a plasma cleaning device. The following description will be made with the plasma etching device being an inductively coupled plasma etching device.

[0039] Figure 1 It is a structural schematic diagram of a plasma processing device of the present invention.

[0040] Please refer to Figure 1 The plasma reaction device includes: a reaction chamber 109, which is a plasma environment; and semiconductor components exposed to the plasma environment.

[0041] The plasma reaction device also includes: a base, the base is used to carry the substrate to be processed, and the plasma is used to process the substrate to be processed. The plasma environment contains at least one of fluorine, chlorine and oxygen, so that the plasma has strong corrosiveness. In order to prevent the surface of the semiconductor component body from being corroded by the plasma, it is necessary to coat the surface of the semiconductor component body with a corrosion-resistant coating.

[0042] In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor components exposed to the plasma environment include: a bushing 101, a gas nozzle 102, an electrostatic chuck 103, a focusing ring 104, an insulating ring 105, a cover ring 106, a semiconductor component body plasma confinement device 107, a ceramic cover plate 108 or a gas connection flange (not shown). The surfaces of these components need to be coated with a corrosion-resistant coating to prevent corrosion from the plasma.

[0043] In specific applications, the plasma reaction device may also be a capacitively coupled plasma reaction device. Accordingly, the components exposed to the plasma environment include: at least one of a shower head, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring, a liftable isolation ring, or a semiconductor component body plasma confinement device. The surfaces of these components need to be coated with a corrosion-resistant coating to prevent corrosion from the plasma.

[0044] The following is a detailed description of semiconductor components:

[0045] Please refer to Figure 2 The semiconductor component 200 includes: a semiconductor component body 200a; a corrosion-resistant coating 200b, which is located on the surface of the semiconductor component body 200a and is composed of a crystalline phase and an amorphous phase of a rare earth element fluoride oxide, and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase.

[0046] The material of the semiconductor component body 200a includes at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramic.

[0047] The corrosion-resistant coating 200b contains rare earth elements including at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.

[0048] The corrosion-resistant coating 200b is used to protect the semiconductor component body 200a and prevent the semiconductor component body 200a from being corroded by plasma. Specifically, although the corrosion-resistant coating 200b contains an amorphous phase and a crystalline phase, the corrosion-resistant coating 200b is still a crystalline structure as a whole, and the crystalline structure is generally relatively stable. Therefore, the performance of the corrosion-resistant coating 200b is relatively stable. The amorphous phase is dispersed in the crystalline phase. Specifically, the amorphous phase is located on the surface and inside of the crystalline phase. Since the amorphous phase has a network phase and has a long-range disordered phase characteristic, the amorphous phase can withstand greater internal stress than the crystalline phase. That is to say, the amorphous phase can reduce the internal stress of the corrosion-resistant coating as a whole, and can reduce the occurrence of cracks and shedding of the corrosion-resistant coating. Therefore, it is beneficial to increase the service life of the corrosion-resistant coating. Furthermore, under the premise of maintaining a stable crystalline phase of the overall corrosion-resistant coating, the amorphous phase regulates the F content in the coating. Compared with the YOF coating with only a crystalline phase, the F content in the corrosion-resistant coating composed of the crystalline phase and the amorphous phase can be further improved. The corrosion-resistant coating with a high F content (or concentration gradient) can resist the diffusion of plasma on the coating surface and further chemical corrosion, and reduce the risk of the coating being preferentially corroded locally in the etching chamber to form tiny particle contaminants. That is, the corrosion-resistant coating 200b applied to advanced processes (5 nanometers and below) can withstand higher power and longer plasma corrosion without easily causing particle contamination problems.

[0049] In actual process applications, different process steps require different plasma intensities. The fluorine content in the corrosion-resistant coating 200b can be determined according to the strength of the plasma environment. Specifically, when the corrosion ability of the plasma environment is stronger, the fluorine content in the corrosion-resistant coating 200b is increased. On the contrary, when the corrosion ability of the plasma environment is weaker, the fluorine content in the corrosion-resistant coating 200b does not need to be too high to meet the corrosion resistance requirements.

[0050] Please refer to Figure 3, a bias power source is usually applied to the base, and the bias power source is used to make the charged particles in the plasma bombard the surface of the base vertically to achieve the processing of the substrate to be processed on the surface of the base. Since the surface of the parts around the base is parallel to the surface of the substrate to be processed, the corrosion effect of the corrosion-resistant coating around the base is a chemical corrosion enhanced by physical action, and its corrosion rate is greater than the side wall and top of the reaction chamber. Therefore, the fluorine content in the corrosion-resistant coating of the semiconductor parts (substrate A) on the top of the reaction chamber can be made less than the fluorine content in the corrosion-resistant coating of the semiconductor parts (substrate B) on the side wall of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor parts (substrate B) on the side wall of the reaction chamber is less than the fluorine content in the corrosion-resistant coating of the semiconductor parts (substrate C) on the periphery of the base, that is: the fluorine content in the corrosion-resistant coating 200b on the surface of the semiconductor parts at different positions in the same reaction chamber is different, so that the semiconductor parts at different positions are not easily corroded by plasma, which is conducive to reducing the particle pollution problem in the reaction chamber. Among them, the corrosion includes not only chemical corrosion but also physical bombardment.

[0051] In this embodiment, the density of the corrosion-resistant coating 200b is 98% to 100%, so that the corrosion-resistant coating 200b has a strong ability to resist plasma corrosion.

[0052] In this embodiment, the thickness of the corrosion-resistant coating 200b is 0.01 micrometers to 200 micrometers.

[0053] In other embodiments, the corrosion-resistant coating may have other thicknesses.

[0054] In one embodiment, the rare earth elements of the crystalline phase and the amorphous phase of the same layer are different. For example, the crystalline phase is yttrium oxyfluoride, and the amorphous phase is cerium oxyfluoride. The cerium oxyfluoride is used to improve the corrosion resistance of the corrosion-resistant coating 200b and reduce the particle contamination problem.

[0055] In another embodiment, the rare earth elements of the crystalline phase and the amorphous phase of the same layer are the same, for example, the crystalline phase and the amorphous phase are both yttrium fluoride oxide. The significance of such a design is that the amorphous and crystalline in the corrosion-resistant coating have the same constituent elements, and the atomic and molecular potential fields are relatively uniform, so that the corrosion-resistant coating can maintain a relatively low potential energy and maintain the relative stability of the amorphous and crystalline phases, so that the corrosion-resistant coating 200b has better stability and is not prone to drift.

[0056] Accordingly, the present invention also provides a method for forming a corrosion-resistant coating on a semiconductor component body, please refer to Figure 4 .

[0057] Figure 4The present invention is a process flow chart for forming a corrosion-resistant coating on the surface of a semiconductor component body.

[0058] Please refer to Figure 4 , step S1: providing a semiconductor component body; step S2: forming the above-mentioned corrosion-resistant coating on the semiconductor component body.

[0059] The formation process of the corrosion-resistant coating includes at least one of a physical vapor deposition process, a chemical vapor deposition process and an atomic layer deposition process.

[0060] The method further comprises: performing enhancement treatment on the plasma by using an auxiliary enhancement source; the auxiliary enhancement source comprises: at least one of a plasma source, an ion beam source, a microwave source and a radio frequency source.

[0061] The following is a schematic description of the method of forming the corrosion-resistant coating by using a physical vapor deposition process as an example:

[0062] Figure 5 It is a schematic diagram of a device for forming a corrosion-resistant coating by utilizing a physical vapor deposition process according to the present invention.

[0063] Please refer to Figure 5 , vacuum chamber 300; rare earth fluorine target 302a, rare earth oxygen target 302b and semiconductor component body 301 are located in the vacuum chamber 300, and the rare earth fluorine target 302a and rare earth oxygen target 302b are arranged opposite to the semiconductor component body 301.

[0064] In one embodiment, the method for forming the corrosion-resistant coating 303 includes: placing a semiconductor component body 301 in a vacuum chamber; arranging a rare earth fluorine target 302a and a rare earth oxygen target 302b relative to the semiconductor component body 301; after arranging the rare earth fluorine target 302a and the rare earth oxygen target 302b relative to the semiconductor component body 301, heating the semiconductor component body 301 to excite the rare earth fluorine target 302a and the rare earth oxygen target 302b to form a molecular flow, and introducing fluorine-containing and oxygen-containing process gases into the vacuum chamber 300, wherein the molecular flow and the process gas form a crystalline and amorphous corrosion-resistant coating 303 on the surface of the semiconductor component body 301.

[0065] In this embodiment, the oxygen atoms in the process gas are mainly used to control the formation of a crystalline phase, and the fluorine atoms are mainly used to control the formation of an amorphous phase. By adjusting the fluorine / oxygen atomic ratio in the process gas between 3:7 and 7:3, the ratio of the crystalline phase to the amorphous phase in the corrosion-resistant coating and the fluorine content in the corrosion-resistant coating can be adjusted, so that the corrosion-resistant coating has better corrosion resistance and is conducive to reducing the risk of particle contamination. The fluorine / oxygen atomic ratio in the process gas can also be adjusted between 3:7 and 4:6, or between 4:6 and 2:1, or between 2:1 and 7:3.

[0066] In another embodiment, the method for forming the corrosion-resistant coating includes: placing a semiconductor component body 301 in a vacuum chamber 300; setting a rare earth fluorine target 302a and a rare earth oxygen target 302b, wherein the rare earth fluorine target 302a and the rare earth oxygen target 302b are arranged relative to the semiconductor component body 301, the distance between the rare earth fluorine target 302a and the rare earth oxygen target 302b is d, and the height from the rare earth fluorine target 302a and the rare earth oxygen target 302b to the semiconductor component body is h, and d:h is set between 1:1 and 1:20; after setting the distance d and the height h, heating the semiconductor component body, exciting the rare earth fluorine target 302a and the rare earth oxygen target 302b to form a molecular flow, and introducing fluorine-containing and oxygen-containing process gases, so that the molecular flow and the process gas form a corrosion-resistant coating 303 composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body 301.

[0067] Among them, d:h can also be set between 1:1 and 1:8, or between 1:8 and 1:15, or between 1:15 and 1:20.

[0068] The d:h value is set according to the actual process needs, and the ratio of the crystalline phase to the amorphous phase in the corrosion-resistant coating 303 can be adjusted. This is because: after the fluorine-containing target 302a is excited, the excitation power of the molecular flow is lower than the excitation power of the oxygen-containing target 302b. The higher the height h, the longer the movement time of the fluorine-containing molecular flow, the more and faster the excitation power is lost through radiation, and thus the more amorphous phase is formed in the coating. By adjusting the ratio of the crystalline phase to the amorphous phase in the corrosion-resistant coating, the corrosion-resistant coating has good corrosion resistance, which is conducive to reducing the risk of particle pollution.

[0069] In this embodiment, the range of the height h is: 10 cm to 2 meters. The significance of selecting the height h is that if the height h is less than 10 cm, the corrosion-resistant coating formed has only a crystalline phase but no amorphous phase, so that the corrosion resistance of the corrosion-resistant coating is poor; if the height h is greater than 2 meters, the corrosion-resistant coating formed has only an amorphous phase but no crystalline phase, so that the stability of the corrosion-resistant coating is poor. The range of the height h can also be set to: between 10 cm and 80 cm, or between 80 cm and 1.2 meters, or between 1.2 meters and 2 meters.

[0070] In another embodiment, the method for forming the corrosion-resistant coating includes: placing the semiconductor component body 301 in a vacuum chamber 300; arranging a rare earth fluorine-containing target 302a and a rare earth oxygen-containing target 302b, so that the rare earth fluorine target 302a and the rare earth oxygen-containing target 302b are arranged relative to the semiconductor component body 301, and adjusting the excitation power of the rare earth fluorine target 302a and the rare earth oxygen-containing target 302b; after adjusting the excitation power of the rare earth fluorine target 302a and the rare earth oxygen-containing target 302b, heating the semiconductor component body to excite the rare earth fluorine target 302a and the rare earth oxygen-containing target 302b to form a molecular flow, and introducing fluorine-containing and oxygen-containing process gases, so that the molecular flow and the process gas form a corrosion-resistant coating composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body.

[0071] According to the actual process requirements, the excitation powers P1 and P2 of the fluorine-containing target 302a and the oxygen-containing target 302b are regulated, and then the fluorine / oxygen ratio in the molecular flow is adjusted to control the ratio of the crystalline phase and the amorphous phase in the formed coating. Among them, the ratio of P1 and P2 P1:P2 is between 1:1 and 1:20, so that the corrosion-resistant coating has good corrosion resistance and is conducive to reducing the risk of particle contamination. The ratio of P1 and P2 can also be 1:1 to 1:7 or 1:7 to 1:13 or 1:13 to 1:20. It should be noted here that the power required for the fluorine-containing target 302a to excite fluorine is relatively low, and the power required for the oxygen-containing target 302b to excite oxygen is relatively high.

[0072] The amorphous phase is used to adjust the fluorine content in the corrosion-resistant coating 303 to meet the needs of different processes or different positions, so that the corrosion-resistant coating 303 has a stronger corrosion resistance and is conducive to reducing the particle pollution problem. In this embodiment, the fluorine content in the corrosion-resistant coating 303 is: 5% to 90%. The fluorine content in the corrosion-resistant coating is: 5% to 34% or 34% to 50% or 50% to 80% or 80% to 100%.

[0073] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A semiconductor component, characterized in that: include: Semiconductor component body; The corrosion-resistant coating is located on the surface of the semiconductor component body and is composed of a crystalline phase and an amorphous phase of a rare earth element fluoride oxide, and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase; while maintaining the overall stable crystalline phase of the corrosion-resistant coating, the amorphous phase is used to adjust the fluorine content in the corrosion-resistant coating; the amorphous phase is located on the surface of the crystalline phase and in the body of the crystalline phase, and the thickness of the corrosion-resistant coating is 0.01 microns to 200 microns.

2. The semiconductor component according to claim 1, wherein: The rare earth element of the rare earth element fluoride oxide of the corrosion-resistant coating includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.

3. The semiconductor component according to claim 2, wherein: The rare earth element of the crystalline phase and the amorphous phase of the same layer is the same.

4. The semiconductor component according to claim 2, wherein: The rare earth elements of the crystalline phase and the amorphous phase of the same layer are different.

5. The semiconductor component according to claim 1, wherein: The material of the semiconductor component body includes at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramic.

6. The semiconductor component according to claim 1, wherein: The density of the corrosion-resistant coating is 98% to 100%.

7. A plasma processing device, characterized in that: include: A reaction chamber, wherein the interior of the chamber is a plasma environment; The semiconductor component according to any one of claims 1 to 6 is located in the reaction chamber and exposed to the plasma environment.

8. The plasma processing apparatus according to claim 7, wherein: The plasma environment contains at least one of fluorine, chlorine or oxygen.

9. The plasma processing apparatus according to claim 7, wherein: The plasma processing device is a plasma etching device or a plasma cleaning device.

10. The plasma processing apparatus according to claim 9, wherein: When the plasma etching device is an inductively coupled plasma etching device, the components include: at least one of a ceramic plate, an inner sleeve, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic suction cup assembly, a cover ring, a focusing ring, an insulating ring or a plasma confinement device.

11. The plasma processing apparatus according to claim 9, wherein: When the plasma etching device is a capacitively coupled plasma etching device, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic suction cup assembly, a lower grounding ring, a cover ring, a focusing ring, an insulating ring, a liftable isolation ring or at least one of a plasma confinement device.

12. The plasma processing apparatus according to claim 7, wherein: The reaction chamber also includes: a base for carrying a substrate to be processed, wherein the substrate to be processed is exposed to the plasma environment; there are multiple semiconductor components, which are respectively located at the top of the reaction chamber, the side walls of the reaction chamber and the periphery of the base, and the relationship between the fluorine content in the corrosion-resistant coating of the semiconductor components at different positions is as follows: the fluorine content in the corrosion-resistant coating of the semiconductor components at the top of the reaction chamber is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the side walls of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor components on the side walls of the reaction chamber is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the periphery of the base.

13. A method for forming a corrosion-resistant coating on a semiconductor component body, characterized in that: include: Provide semiconductor components; A corrosion-resistant coating according to any one of claims 1 to 6 is formed on the semiconductor component body.

14. The method for forming a corrosion-resistant coating according to claim 13, wherein: The method for forming the corrosion-resistant coating comprises: placing a semiconductor component body in a vacuum chamber; arranging a rare earth fluorine-containing target material and a rare earth oxygen-containing target material relative to the semiconductor component body; after arranging the rare earth fluorine-containing target material and the rare earth oxygen-containing target material relative to the semiconductor component body, heating the semiconductor component body to excite the target material to form a molecular flow, and introducing a fluorine-containing and oxygen-containing process gas into the vacuum reaction chamber, wherein the molecular flow and the process gas form a corrosion-resistant coating composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body.

15. The method for forming a corrosion-resistant coating according to claim 14, wherein: The atomic ratio of the fluorine-containing process gas and the oxygen-containing process gas is adjusted so that the atomic ratio of the fluorine-containing process gas and the oxygen-containing process gas is 3:7 to 7:

3.

16. The method for forming a corrosion-resistant coating according to claim 14, wherein: The distance between the rare earth fluorine target and the rare earth oxygen target and the height from the rare earth fluorine target and the rare earth oxygen target to the semiconductor component body are set to be between 1:1 and 1:20; the range of the height is: 10 cm to 2 meters.

17. The method for forming a corrosion-resistant coating according to claim 14, wherein: The excitation power ratio of the fluorine-containing target and the oxygen-containing target is regulated between 1:1 and 1:

20.

18. The method for forming a corrosion-resistant coating according to claim 13, wherein: The atomic percentage content of fluorine in the corrosion-resistant coating is 5% to 90%.

19. The method for forming a corrosion-resistant coating according to claim 13, wherein: The formation process of the corrosion-resistant coating includes at least one of a physical vapor deposition process, a chemical vapor deposition process and an atomic layer deposition process.

20. The method for forming a corrosion-resistant coating according to claim 19, wherein: Also includes: Using an auxiliary enhancement source to enhance the plasma; The auxiliary enhancement source includes at least one of a plasma source, an ion beam source, a microwave source and a radio frequency source.

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