A semiconductor laser light source

Abstract

The application provides a semiconductor laser light source, comprising: a base, a cooling liquid inlet and a cooling liquid outlet being arranged in the base and penetrating the base; a light-transmitting lampshade, which is arranged on one side of the base and is sealingly connected with the edge of the base, the light-transmitting lampshade and the base form a cooling cavity, and the cooling cavity is communicated with the cooling liquid inlet and the cooling liquid outlet; a reflecting lampshade, which is arranged outside the light-transmitting lampshade; and a fluorescent layer, which is arranged in the cooling cavity and is adapted to reflect part of incident laser and emit fluorescent light to the inner wall of the reflecting lampshade. The cooling liquid enters the cooling cavity through the cooling liquid inlet and flows out of the cooling cavity through the cooling liquid outlet to take away the heat in the cooling cavity, thereby forming water circulation cooling, having good heat dissipation effect, preventing the semiconductor laser light source from overheating and being abnormal, and being beneficial to improving the stability of the performance of the semiconductor laser light source.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a semiconductor laser light source. Background Technology

[0002] LED light sources, due to their advantages of high efficiency, energy saving, and low cost, are gradually replacing traditional electric light sources and becoming the fourth generation of lighting products. However, LED light sources still have problems such as low brightness, poor beam quality, inability to illuminate over long distances, limited air penetration, and severe susceptibility to weather conditions. These problems are even more pronounced for aircraft and high-speed rail lighting. Semiconductor lasers, which share the same origin as LEDs, not only possess the advantages of high efficiency, energy saving, and low cost, but also offer the advantages of high laser brightness and good beam quality, potentially meeting the lighting needs of aircraft and high-speed rail. However, the significant heat generated when semiconductor lasers irradiate the fluorescent material in the light source leads to unstable performance. Summary of the Invention

[0003] Therefore, the technical problem to be solved by the present invention is to overcome the problem of unstable performance of semiconductor laser light sources in the prior art, thereby providing a semiconductor laser light source.

[0004] This invention provides a semiconductor laser light source, comprising: a base having a coolant inlet and a coolant outlet extending through the base; a light-transmitting lampshade located on one side of the base and sealed to the edge of the base, the light-transmitting lampshade and the base forming a cooling cavity, the cooling cavity communicating with the coolant inlet and the coolant outlet; a reflector located outside the light-transmitting lampshade; and a fluorescent layer located in the cooling cavity, the fluorescent layer being adapted to reflect part of the incident laser and excite fluorescence to the inner wall of the reflector.

[0005] Optionally, the reflector is detachably connected to the edge of the base.

[0006] Optionally, the fluorescent layer has a light-receiving surface and a backlight surface facing each other; the semiconductor laser light source further includes: an anti-reflection layer, the anti-reflection layer being located on the backlight surface; or, the anti-reflection layer being located on a portion of the outer surface of the light-transmitting lampshade, and the anti-reflection layer being disposed opposite to the backlight surface; or, the anti-reflection layer being located on a portion of the inner surface of the light-transmitting lampshade, and the anti-reflection layer being disposed opposite to the backlight surface.

[0007] Optionally, the anti-reflective layer includes a prism anti-reflective layer, a concave mirror anti-reflective layer, or a reflective film anti-reflective layer.

[0008] Optionally, the fluorescent layer may be made of yttrium aluminum garnet ceramic material.

[0009] Optionally, the focal point of the reflector is located in the fluorescent layer, and the reflector is adapted to reflect the divergent light emitted from the fluorescent layer into a parallel beam.

[0010] Optionally, the reflector is parabolic in shape; the base facing the reflector is concave on one side.

[0011] Optionally, it may also include: a bracket, which fixes the side of the base facing the fluorescent layer and the fluorescent layer; or, the side surface of the fluorescent layer facing away from the base is fixedly connected to the light-transmitting lampshade.

[0012] Optionally, the reflector cover has a light entrance for incident laser light to enter the fluorescent layer; or, the base has a light entrance for incident laser light to enter the fluorescent layer.

[0013] Optionally, it may also include: a semiconductor laser located outside the lampshade, wherein the laser light generated by the semiconductor laser is adapted to pass through the light entrance port.

[0014] Optionally, the semiconductor laser is adapted to generate blue laser light, the blue laser light is adapted to excite the fluorescent layer to generate yellow laser light, and the semiconductor laser light source is a white light source.

[0015] Optionally, a lens is provided in the light entrance port, and the lens is adapted to shape the incident laser.

[0016] The technical solution of the present invention has the following beneficial effects:

[0017] 1. The semiconductor laser light source provided by this invention, in which a portion of the incident laser light enters the fluorescent layer and excites fluorescence of a different color than the incident laser light, and a portion of the incident laser light is reflected by the fluorescent layer, thus the fluorescence and the reflected incident laser light mix together to form the desired illumination light. The light-transmitting lampshade has light transmittance and minimal loss of laser brightness. The fluorescent layer is suitable for reflecting a portion of the incident laser light and exciting fluorescence to the inner wall of the reflective lampshade, which increases the brightness of the laser, thus resulting in a light source with high brightness and good beam quality. A coolant inlet and a coolant outlet are provided in the base, penetrating the base. The light-transmitting lampshade and the base form a cooling cavity. Coolant enters the cooling cavity through the coolant inlet and flows out of the cooling cavity through the coolant outlet to remove heat from the cooling cavity, forming a water circulation cooling system. The fluorescent layer is placed in the cooling cavity, thus providing good heat dissipation for the fluorescent layer, preventing overheating abnormalities in the semiconductor laser light source, and improving the stability of the semiconductor laser light source performance.

[0018] 2. Furthermore, the reflector is detachably connected to the edge of the base, which facilitates the replacement of the overall structure consisting of the base and the reflector.

[0019] 3. Furthermore, the fluorescent layer is made of yttrium aluminum garnet ceramic material, which possesses the fluorescent properties of fluorescent materials while maintaining the advantage of good heat dissipation of ceramic materials.

[0020] 4. Furthermore, the focal point of the reflector is located in the fluorescent layer. The reflector is adapted to reflect the divergent light emitted from the fluorescent layer into a parallel beam, which is beneficial to forming a high-brightness beam. This makes the beam generated by the semiconductor laser light source have good penetration and can be transmitted over long distances, making it suitable for aircraft and high-speed rail lighting.

[0021] 5. Furthermore, the reflector is parabolic in shape. The parabolic reflector can convert the light emitted from the phosphor layer at the focal point into parallel light, thus optimizing the quality of the beam emitted from the semiconductor laser source.

[0022] 6. Furthermore, the bracket fixes the inner wall of the light-transmitting lampshade and the fluorescent layer, or the side surface of the fluorescent layer facing away from the base is fixedly connected to the light-transmitting lampshade, which helps to improve the stability of the fluorescent layer in the cooling cavity. Attached Figure Description

[0023] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0024] Figures 1 to 6 Schematic diagrams of the structure of semiconductor laser light sources provided in different embodiments of the present invention;

[0025] Figure 7 This is a schematic diagram showing the positional relationship between the fluorescence layer and the antireflection layer when the antireflection layer is a concave mirror antireflection layer. Detailed Implementation

[0026] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0029] One embodiment of the present invention provides a semiconductor laser light source, please refer to... Figure 1 ,include:

[0030] Base 9, wherein a coolant inlet 7 and a coolant outlet 8 are provided through the base 9;

[0031] A light-transmitting lampshade 2 is located on one side of the base 9 and is sealed to the edge of the base 9. The light-transmitting lampshade 2 and the base 9 form a cooling chamber, which is connected to the coolant inlet 7 and the coolant outlet 8.

[0032] Reflector 1, which is located outside the light-transmitting lamp cover 2;

[0033] A fluorescent layer 3 is located in the cooling cavity, and the fluorescent layer 3 is adapted to reflect part of the incident laser and excite fluorescence to the inner wall of the reflector 1.

[0034] The base 9 is made of metal, which makes it easier to process and shape the coolant inlet 7 and coolant outlet 8, and also facilitates the sealing of the base 9 with the light-transmitting lamp cover 2.

[0035] The base 9 has a coolant inlet 7 and a coolant outlet 8 that penetrate the base 9. The light-transmitting lamp cover 2 and the base 9 form a cooling cavity. The coolant enters the cooling cavity through the coolant inlet 7 and flows out of the cooling cavity through the coolant outlet 8 to carry away the heat in the cooling cavity, forming a water circulation cooling. The fluorescent layer 3 is placed in the cooling cavity, so the heat dissipation effect of the fluorescent layer 3 is good, preventing the semiconductor laser light source from overheating abnormally, which is beneficial to improving the stability of the semiconductor laser light source performance.

[0036] In this embodiment, the semiconductor laser light source further includes a support 5, which fixes the base 9 to the side facing the phosphor layer 3 and the phosphor layer 3. In one embodiment, the support 5 is a transparent support, which can prevent the support 5 from blocking the light beam and further improve the beam quality.

[0037] Please refer to Figures 1 to 5 ,exist Figures 1 to 5 In the different embodiments shown, the reflector 1 has a light entrance 6 for incident laser light, and the distance from the light entrance 6 to the base 9 is less than the distance from the fluorescent layer 3 to the base 9.

[0038] Please refer to Figure 6 ,exist Figure 6 In the embodiment shown, the base 9d has a light entrance port 6d for incident laser light to be incident on the fluorescent layer 3.

[0039] A lens is provided in the light entrance port. The lens is suitable for shaping the incident laser. The lens can be a convex lens or an aspherical mirror, which can collimate, focus, or image the incident laser at a certain magnification.

[0040] The fluorescent layer 3 has a light-receiving surface and a backlighting surface.

[0041] The semiconductor laser light source further includes: an anti-reflection layer 4, which is located on the backlight surface; or, the anti-reflection layer 4 is located on a portion of the outer surface of the light-transmitting lampshade 2, and the anti-reflection layer 4 is disposed opposite to the backlight surface; or, the anti-reflection layer 4 is located on a portion of the inner surface of the light-transmitting lampshade 2, and the anti-reflection layer 4 is disposed opposite to the backlight surface.

[0042] like Figure 1 As shown, in Figure 1 In the illustrated embodiment, the light-receiving surface of the phosphor layer 3 faces the base 9. Since the semiconductor laser light source does not employ an anti-reflection layer 4, the light beam emitted from the back surface of the phosphor layer 3 is scattered and lost as the transmission distance increases. The semiconductor laser light source provided in this embodiment was simulated using ZEMAX software at a distance of 500cm from the source and a receiving area of ​​9×9m². 2 Under the test conditions, the light intensity at the test point is 46% of the light source intensity.

[0043] like Figure 2 As shown, in Figure 2 In the illustrated embodiment, the light-receiving surface of the fluorescent layer 3 faces the base 9, and an anti-reflection layer 4 is disposed on the back surface of the fluorescent layer 3. The anti-reflection layer 4 includes a prism anti-reflection layer or a concave mirror anti-reflection layer. Please refer to [reference needed]. Figure 7When the anti-reflection layer 4 is a concave mirror anti-reflection layer, the phosphor layer 3 needs to be placed at the center 10 of the concave mirror anti-reflection layer. This way, when the divergent light beam is incident on the surface of the concave mirror anti-reflection layer, it will return to the phosphor layer 3 to further excite the phosphor layer 3, which is beneficial to improving the conversion efficiency of the phosphor layer 3. When the anti-reflection layer 4 is a prism anti-reflection layer, the long side of the prism anti-reflection layer needs to be greater than the length of the phosphor layer 3. This way, the divergent light emitted from all positions of the phosphor layer 3 can be reflected to the surface of the reflector 1. In this embodiment, the anti-reflection layer 4 is a concave mirror reflector layer. When the divergent light beam emitted from the back surface of the phosphor layer 3 is incident on the surface of the concave mirror anti-reflection layer, it will return to the phosphor layer 3 to further excite the phosphor layer 3, which is beneficial to improving the conversion efficiency of the phosphor layer 3. The divergent light beam emitted from the back surface of the phosphor layer 3 is shaped by the anti-reflection layer 4. The semiconductor laser source provided in this embodiment is simulated using ZEMAX software at a distance of 500cm from the semiconductor laser source and a receiving area of ​​9×9m². 2 Under the test conditions, the light intensity at the test point was 65.2% of the light source intensity, compared to Figure 1 The embodiments described in the text have been improved.

[0044] like Figure 3 As shown, in Figure 3 In the illustrated embodiment, the light-receiving surface of the fluorescent layer 3 faces the base 9, and the anti-reflective layer 4a is located on a portion of the outer surface of the light-transmitting lampshade 2. Since the anti-reflective layer 4a is on the outer surface of the light-transmitting lampshade 2, its formation is simple and convenient. The area of ​​the anti-reflective layer 4a is reasonably selected based on actual conditions. On the one hand, it should ensure, as much as possible, that the large-angle divergent light beam emitted from the fluorescent layer 3 can be reflected back to the reflective lampshade 1; on the other hand, it should minimize the obstruction of the light beam by the anti-reflective layer 4a. Because the anti-reflective layer 4a does not contact the bracket 5 or the fluorescent layer 3, it... Figure 2 The advantage of this embodiment compared to the previous one is that it avoids the pressure exerted by the anti-reflection layer 4a on the support 5, thereby improving the stability of the semiconductor laser light source.

[0045] like Figure 4 As shown, in Figure 4 In the illustrated embodiment, the antireflective layer 4 is a reflective antireflective film. The light-receiving surface of the fluorescent layer 3 faces the substrate 9, and the antireflective layer 4b is formed on the backlight surface of the fluorescent layer 3 by a vapor deposition process. Figure 3 The advantage of this embodiment compared to the previous one is that it completely avoids the obstruction of the beam by the anti-reflection layer 4b. Using ZEMAX software to simulate the semiconductor laser source provided in this embodiment, at a distance of 500cm from the semiconductor laser source and a receiving area of ​​9×9m²... 2 Under the test conditions, the light intensity at the test point was 64.5% of the light source intensity, compared to Figure 1 The embodiments described herein are improved and are consistent with Figure 2 The embodiments are not significantly different.

[0046] like Figure 5 As shown, in Figure 5 In the embodiment shown, an anti-reflection layer 4c is formed on the back surface of the fluorescent layer 3c by coating. At the same time, the fluorescent layer 3c and the anti-reflection layer 4c are attached to the inner sidewall of the light-transmitting lamp cover 2c. This eliminates the need for a support, which simplifies the fabrication process and structure of the semiconductor laser light source and makes the structure of the semiconductor laser light source more stable. In addition, it also helps to reduce the volume of the overall structure formed by the light-transmitting lamp cover 2c and the base 9.

[0047] like Figure 6 As shown, in Figure 6 In the embodiment shown, the light-receiving surface of the fluorescent layer 3d faces the base 9d. An anti-reflection layer 4d is formed on the back surface of the fluorescent layer 3d by a coating process. The fluorescent layer 3d and the anti-reflection layer 4d are attached to the inner wall of the light-transmitting lamp cover 2d facing the base 9d. Meanwhile, the light entrance 6d is located in the base 9d and not in the reflective lamp cover 1d, which further simplifies the structure of the semiconductor laser light source.

[0048] Coolant is suitable for being introduced into the cooling chamber.

[0049] In one embodiment, the coolant is cooling water. In other embodiments, other coolants may be selected.

[0050] In one embodiment, the reflector 1 is detachably connected to the edge of the base 9, which facilitates replacement of the overall structure consisting of the base 9 and the light-transmitting lamp cover 2, makes maintenance convenient, and enhances practicality. In other embodiments, the reflector 1 is fixedly connected to the edge of the base 9.

[0051] The light-transmitting lampshade 2 is made of uniform material, which minimizes light beam loss and has a robust structure to protect the fluorescent layer 3 in the cooling chamber from damage by the external environment.

[0052] In this embodiment, the material of the light-transmitting lampshade 2 is a transparent material. In one embodiment, the transmittance of the light-transmitting lampshade 2 to the diffused light emitted from the fluorescent layer 3 is greater than or equal to 95%. In this embodiment, the light-transmitting lampshade 2 is transparent, resulting in minimal loss of laser brightness, and the fluorescent layer 3 is adapted to reflect part of the incident laser and excite fluorescence to the inner wall of the reflective lampshade 1.

[0053] In this embodiment, the reflector 1 increases the brightness of the laser, thus providing a light source with high brightness and good beam quality. The inner surface of the reflector 1 undergoes special polishing treatment and is coated with a reflective film, which can be a dielectric film or a metal film. Furthermore, the surface of the base 9 facing the reflector 1 is also coated with a dielectric film or a metal film, allowing the incident beam to be reflected with almost no loss. In one embodiment, the reflector 1 has a reflectivity of 99% or greater for light transmitted through the light-transmitting cover 2.

[0054] After a portion of the incident laser enters the fluorescent layer 3, it excites fluorescence of a different color than the incident laser. A portion of the incident laser is reflected by the fluorescent layer 3. In this way, the fluorescence and the reflected incident laser mix together to form the desired illumination light. The anti-reflection layer 4 can reflect the large-angle fluorescence emitted by the fluorescent layer 3 toward the reflector 1.

[0055] Part of the incident laser is reflected by the fluorescent layer 3, and part of the incident laser passes through the fluorescent layer 3 and is reflected back to the fluorescent layer 3 by the anti-reflection layer 4. The part of the incident laser reflected back to the fluorescent layer 3 by the anti-reflection layer 4 excites the fluorescent layer 3 to emit fluorescence, thereby improving the light conversion efficiency and the utilization rate of the fluorescent material and optimizing the light quality.

[0056] It should be noted that after the fluorescent layer 3 is excited by the incident light, the particles in the fluorescent layer 3 absorb the incident light, and then transition from the ground state to the excited state, and immediately de-excite and emit fluorescence.

[0057] In one embodiment, the thickness of the fluorescent layer 3 is 0.2 mm to 2 mm, for example, 0.2 mm, 0.5 mm, 1 mm, 1.5 mm, 1.8 mm, or 2 mm. If the thickness of the fluorescent layer 3 is greater than 2 mm, it is not conducive to heat dissipation; if the thickness of the fluorescent layer 3 is less than 0.2 mm, the applicability of the semiconductor laser light source is not strong.

[0058] The semiconductor laser light source also includes a semiconductor laser (not shown in the figure) located outside the lampshade, for example, a high-power semiconductor laser. The semiconductor laser is preferably a small-sized one for easy installation and fixation, and also for miniaturizing the overall light source system. The laser light generated by the semiconductor laser is suitable for passing through the light entrance port 6. Specifically, the light exit window of the semiconductor laser can be directly fixed to the light entrance port 6, or it can be fixed to the light entrance port 6 via a fiber optic connector for fiber optic output. In a specific embodiment, the power of the semiconductor laser is greater than or equal to 100mW.

[0059] In one embodiment, the semiconductor laser is adapted to generate a blue laser, which is adapted to excite the phosphor layer 3 to generate a yellow beam. That is, after the phosphor layer 3 is irradiated by the blue laser, the particles absorb the blue light and transition from the ground state to the excited state, and immediately de-excite to generate a yellow beam. The blue laser and the yellow beam mix to obtain white light. In this case, the semiconductor laser light source is a white light source, and the light emitted from the phosphor layer 3 includes white light. It is reflected by the reflector 1 to the inner surface of the reflector 1 and shaped. The blue laser that is not absorbed by the phosphor layer 3 is reflected back to the phosphor layer 3 by the anti-reflection layer 4 and further converted into a yellow beam. This improves the conversion efficiency of the phosphor layer 3 and the utilization rate of the phosphor layer 3 material, and optimizes the chromaticity of the white light.

[0060] In one embodiment, the fluorescent layer 3 is made of yttrium aluminum garnet ceramic material (YAG fluorescent material), which possesses the fluorescent properties of fluorescent materials while maintaining the good heat dissipation of ceramic materials. In other embodiments, the fluorescent layer 3 can be made of other materials, as long as the laser incident on the fluorescent layer 3 can be excited by the fluorescent layer 3 to produce light of a different color than the incident laser and the wavelength can match the fluorescence to produce white light.

[0061] In one embodiment, the focal point of the reflector 1 is located in the fluorescent layer 3. The reflector 1 is adapted to reflect the divergent light emitted from the fluorescent layer 3 into a parallel beam, which is beneficial to forming a high-brightness beam. This makes the beam generated by the semiconductor laser light source have good penetration and can be transmitted over long distances, making it suitable for aircraft and high-speed rail lighting.

[0062] In one embodiment, the reflector 1 is parabolic in shape. The parabolic reflector 1 can convert the light emitted from the phosphor layer 3 at the focal position into parallel light, optimize the quality of the beam emitted by the semiconductor laser light source, improve the brightness of the beam, and thus increase the penetrating power of the beam, making the semiconductor laser light source suitable for various weather environments.

[0063] In one embodiment, the base 9 has a concave shape on the side facing the reflector 1. In this case, the shape of the light-transmitting lampshade 2 can be a three-quarter sphere that matches the base 9.

[0064] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A semiconductor laser light source, characterized in that, include: A base, wherein a coolant inlet and a coolant outlet are provided through the base; A light-transmitting lampshade is located on one side of the base and is sealed to the edge of the base. The light-transmitting lampshade and the base form a cooling chamber. Coolant enters the cooling chamber through the coolant inlet and flows out of the cooling chamber through the coolant outlet to remove heat from the cooling chamber. A reflector, the reflector being located outside the light-transmitting lamp cover; A fluorescent layer located in the cooling cavity is adapted to reflect part of the incident laser and excite fluorescence to the inner wall of the reflector. The fluorescent layer has a light-receiving surface and a backlighting surface. An anti-reflective layer is provided, wherein the anti-reflective layer is located on the backlight surface; or, the anti-reflective layer is located on a portion of the outer surface of the light-transmitting lampshade and is disposed opposite to the backlight surface; or, the anti-reflective layer is located on a portion of the inner surface of the light-transmitting lampshade and is disposed opposite to the backlight surface; the anti-reflective layer includes a prism anti-reflective layer, a concave mirror anti-reflective layer, or a reflective film anti-reflective layer.

2. The semiconductor laser light source according to claim 1, characterized in that, The reflector cover is detachably connected to the edge of the base.

3. The semiconductor laser light source according to claim 1, characterized in that, The fluorescent layer is made of yttrium aluminum garnet ceramic material.

4. The semiconductor laser light source according to claim 1, characterized in that, The focal point of the reflector is located in the fluorescent layer, and the reflector is adapted to reflect the divergent light emitted from the fluorescent layer into a parallel beam.

5. The semiconductor laser light source according to claim 1, characterized in that, The reflector is parabolic in shape; the base facing the reflector is concave on one side.

6. The semiconductor laser light source according to claim 1, characterized in that, Also includes: The bracket secures the base to the side facing the fluorescent layer and the fluorescent layer; Alternatively, the side surface of the fluorescent layer facing away from the base is fixedly connected to the light-transmitting lampshade.

7. The semiconductor laser light source according to claim 1, characterized in that, The reflector cover has a light entrance for incident laser light to enter the fluorescent layer; Alternatively, the base may have a light entrance for incident laser light to be incident onto the fluorescent layer.

8. The semiconductor laser light source according to claim 7, characterized in that, Also includes: A semiconductor laser located outside the lampshade, the laser light generated by the semiconductor laser being adapted to pass through the light entrance port.

9. The semiconductor laser light source according to claim 8, characterized in that, The semiconductor laser is adapted to generate blue laser light, the blue laser light is adapted to excite the fluorescent layer to generate yellow laser light, and the semiconductor laser light source is a white light source.

10. The semiconductor laser light source according to claim 8 or 9, characterized in that, A lens is provided in the light entrance, and the lens is adapted to shape the incident laser.

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