Display panel and manufacturing method thereof

Abstract

The embodiment of the present invention discloses a display panel and a manufacturing method thereof; the manufacturing method of the display panel comprises: forming an active layer and a source-drain electrode layer, forming a passivation layer, using a first photomask to form a first photoresist layer including a first opening and a second opening on the passivation layer, wherein the first opening penetrates the first photoresist layer, the depth of the second opening is less than the depth of the first opening, removing the exposed passivation layer, forming a fourth opening on the passivation layer, removing the first photoresist layer corresponding to the second opening, forming an electrode material layer, and stripping the first photoresist layer and the electrode material layer located on the first photoresist layer; the present invention uses a photomask to make openings of different depths on the first photoresist layer, after forming the openings that expose the source-drain electrode layer, the photoresist corresponding to the electrode to be retained is removed, and then the electrode material layer is formed, and finally the electrode layer to be removed and the photoresist are stripped, and the passivation layer punching and the electrode layer formation are completed simultaneously by using a single photomask process, thereby reducing the number of photomasks.

Description

Technical Field

[0001] The present invention relates to the field of display, and in particular to a display panel and a manufacturing method thereof. Background Art

[0002] In recent years, with the rapid development of display technology, the technology has become increasingly mature and stable. In order to maximize profits, display manufacturers are seeking cost reduction solutions. Among them, the cost of masks in the process of making display panels is high. The more masks there are, the higher the cost of the display panel.

[0003] Therefore, a display panel and a manufacturing method thereof are urgently needed to solve the above technical problems. Summary of the invention

[0004] The present invention provides a display panel and a manufacturing method thereof, which can alleviate the technical problem of a large number of photomasks in the current display panel process.

[0005] The present invention provides a method for manufacturing a display panel, comprising:

[0006] forming an active layer and a source-drain layer on a substrate;

[0007] forming a passivation layer on the active layer and the source-drain electrode layer;

[0008] Using a first photomask, forming a first photoresist layer including a plurality of first openings and a plurality of second openings on the passivation layer, wherein the first openings penetrate the first photoresist layer to expose the passivation layer, and the depth of the second openings is less than the depth of the first openings;

[0009] removing the exposed passivation layer, and forming a plurality of fourth openings on the passivation layer, wherein the fourth openings expose the source and drain electrode layers;

[0010] Using an ashing process, removing the first photoresist layer corresponding to the second opening to expose the passivation layer;

[0011] forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening;

[0012] The first photoresist layer and the electrode material layer on the first photoresist layer are peeled off to form an electrode layer.

[0013] Preferably, the second opening is communicated with the first opening.

[0014] Preferably, the step of using an ashing process to remove the first photoresist layer corresponding to the second opening to expose the passivation layer includes: using an ashing process to remove the first photoresist layer corresponding to the second opening to form a plurality of third openings, wherein the third openings expose the passivation layer; using plasma dry etching to form a plurality of fifth openings in the passivation layer corresponding to the third openings, wherein the depth of the fifth openings is less than the depth of the fourth openings; the step of forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth openings includes: forming an electrode material layer in the first photoresist layer, the passivation layer, the fifth openings and the fourth openings.

[0015] Preferably, the step of using plasma dry etching to form a plurality of fifth openings in the passivation layer corresponding to the third opening, wherein the depth of the fifth opening is less than the depth of the fourth opening, comprises: using plasma dry etching to form a plurality of fifth openings in the passivation layer corresponding to the third opening, wherein the depth of the fifth opening is less than the depth of the fourth opening, and a portion of the first photoresist layer is suspended above the fifth opening; the step of forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening comprises: forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening, wherein the electrode material layer is broken around the fifth opening.

[0016] Preferably, the depth of the fifth opening is the same as the thickness of the electrode material layer located in the fifth opening.

[0017] Preferably, the first light mask is a halftone light mask, the first light mask includes multiple first light-transmitting areas, multiple second light-transmitting areas and multiple third light-transmitting areas, the first light-transmitting areas are fully light-transmitting areas, the second light-transmitting areas are semi-light-transmitting areas, the third light-transmitting areas are non-light-transmitting areas, the first light-transmitting areas correspond to any one of the first openings, and the second light-transmitting areas correspond to any one of the second openings.

[0018] Preferably, the step of forming an active layer and a source-drain layer on the substrate includes: forming a gate layer including a plurality of first gates and a plurality of gate wirings on the substrate; forming a first insulating layer on the gate layer; and forming an active layer and a source-drain layer including a plurality of source-drain units and a plurality of source-drain wirings on the first insulating layer.

[0019] Preferably, the step of using a first photomask to form a first photoresist layer including a plurality of first openings and a plurality of second openings on the passivation layer, wherein the first openings penetrate the first photoresist layer to expose the passivation layer, and the depth of the second openings is less than the depth of the first openings comprises: using a first photomask to form a first photoresist layer including a plurality of first openings, a plurality of second openings, a plurality of sixth openings, a plurality of seventh openings, and a plurality of eighth openings on the passivation layer, wherein the first openings penetrate the first photoresist layer to expose the passivation layer, the depth of the second openings is less than the depth of the first openings, the sixth openings and the seventh openings penetrate the first photoresist layer to expose the passivation layer, the depth of the eighth openings is less than the depth of the sixth openings, and the sixth openings, the seventh openings, and the eighth openings are connected to each other; removing the exposed passivation layer and forming a plurality of a fourth opening, wherein the step of exposing the source and drain electrode layer through the fourth opening comprises: removing the exposed passivation layer, forming a plurality of fourth openings, a plurality of ninth openings and a plurality of tenth openings on the passivation layer, wherein the fourth opening exposes the source and drain electrode unit, the ninth opening exposes the gate wiring, and the tenth opening exposes the source and drain wiring; the step of removing the first photoresist layer corresponding to the second opening through an ashing process to expose the passivation layer comprises: removing the first photoresist layer corresponding to the second opening and removing the first photoresist layer corresponding to the eighth opening through an ashing process to expose the passivation layer; the step of forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening comprises: forming an electrode material layer in the first photoresist layer, the passivation layer, the fourth opening, the ninth opening and the tenth opening.

[0020] Preferably, the orthographic projection of the source-drain electrode layer on the active layer is located within the active layer.

[0021] The present invention further provides a display panel manufactured by any of the above-mentioned methods for manufacturing a display panel, wherein the display panel comprises:

[0022] Active layer and source-drain layer;

[0023] A passivation layer, located on the active layer and the source-drain electrode layer, the passivation layer comprising a plurality of fourth openings and a plurality of fifth openings;

[0024] an electrode layer located on the passivation layer;

[0025] Among them, the depth of the fifth opening is less than the depth of the fourth opening, the fourth opening penetrates the passivation layer, the fourth opening is connected to the fifth opening, the electrode layer is electrically connected to the source and drain layer through the fourth opening, and part of the electrode layer is located in the fifth opening.

[0026] Beneficial effects of the present invention: When manufacturing the electrode layer, the present invention uses a mask to make openings of different depths in the first photoresist layer. After openings connected to the source and drain layers are opened, the photoresist corresponding to the electrode layer that needs to be retained is removed by an ashing process, and then an electrode material layer is formed. Finally, the electrode layer and the photoresist that need to be removed are peeled off to form an electrode layer. The passivation layer is punched and the electrode layer is formed simultaneously by a single mask process, which reduces the number of masks of the current display panel and simplifies the manufacturing process of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0028] Figure 1 is a flowchart of the steps of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0029] Figures 2A to 2G is a first flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0030] FIG. 3A to FIG. 3C is a second flow chart of the method for manufacturing a display panel provided by an embodiment of the present invention;

[0031] 4A to 4F is a third flow chart of the method for manufacturing a display panel provided by an embodiment of the present invention;

[0032] FIG. 5A to FIG. 5E is a fourth flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0033] FIG. 6A to FIG. 6C is a fifth flow chart of the method for manufacturing a display panel provided by an embodiment of the present invention;

[0034] 7A to 7C is a sixth flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0035] Figure 8 is a seventh flow chart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0036] Fig. 9 It is a schematic diagram of the structure of a display panel provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention. In the present invention, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the drawings; while "inside" and "outside" refer to the outline of the device.

[0038] In recent years, with the rapid development of display technology, the technology has become increasingly mature and stable. In order to maximize profits, display manufacturers are seeking cost reduction solutions. Among them, the cost of masks in the process of making display panels is high. The more masks there are, the higher the cost of the display panel.

[0039] See also Figure 1 , an embodiment of the present invention provides a method for manufacturing a display panel 100, comprising:

[0040] S100, forming an active layer 500 and a source-drain layer 600 on a substrate 200;

[0041] S200, forming a passivation layer 700 on the active layer 500 and the source-drain electrode layer 600;

[0042] S300, using a first photomask 910, forming a first photoresist layer 810 including a plurality of first openings 101 and a plurality of second openings 102 on the passivation layer 700, wherein the first openings 101 penetrate the first photoresist layer 810 to expose the passivation layer 700, and the depth of the second openings 102 is less than the depth of the first openings 101;

[0043] S400, removing the exposed passivation layer 700, and forming a plurality of fourth openings 104 on the passivation layer 700, wherein the fourth openings 104 expose the source and drain electrode layer 600;

[0044] S500, using an ashing process to remove the first photoresist layer 810 corresponding to the second opening 102, so that the passivation layer 700 is exposed;

[0045] S600 , forming an electrode material layer 1001 in the first photoresist layer 810 , the passivation layer 700 and the fourth opening 104 ;

[0046] S700 , peeling off the first photoresist layer 810 and the electrode material layer 1001 on the first photoresist layer 810 to form an electrode layer 1000 .

[0047] The present invention uses a photomask to make openings of different depths in the first photoresist layer when manufacturing the electrode layer. After the openings connected to the source and drain layers are opened, the photoresist corresponding to the electrode layer to be retained is removed by an ashing process, and then an electrode material layer is formed. Finally, the electrode layer to be removed and the photoresist are stripped to form an electrode layer. The passivation layer is punched and the electrode layer is formed simultaneously by a single photomask process, thereby reducing the number of photomasks of the current display panel and simplifying the manufacturing process of the display panel.

[0048] The technical solution of the present invention is now described in conjunction with specific embodiments.

[0049] In this embodiment, the manufacturing method of the display panel 100 includes:

[0050] S100, forming an active layer 500 and a source-drain layer 600 on a substrate 200, see Figure 2A .

[0051] In some embodiments, step S100 includes:

[0052] S110, forming a gate layer 300 including a plurality of first gates 310 and a plurality of gate wirings 320 on the substrate 200, see Figure 3A .

[0053] In some embodiments, step S110 includes:

[0054] S111 , forming a gate material layer on the substrate 200 .

[0055] In some embodiments, the gate material layer may be copper / molybdenum or molybdenum-titanium alloy.

[0056] S112, forming a third photoresist layer on the gate material layer.

[0057] S113, using a third photomask to pattern the third photoresist layer so that a portion of the gate material layer is exposed.

[0058] S114 , using an etching process to remove the exposed gate material layer to form a gate layer 300 including a plurality of first gates 310 and a plurality of gate wirings 320 .

[0059] S120, forming a first insulating layer 400 on the gate layer 300, see Figure 3B .

[0060] S130, forming an active layer 500 and a source-drain layer 600 including a plurality of source-drain units 610 and a plurality of source-drain wirings 620 on the first insulating layer 400, see Figure 3C .

[0061] In some embodiments, step S130 includes:

[0062] S131, forming an active material layer 501 on the first insulating layer 400, see Figure 4A .

[0063] S132, forming a source-drain electrode material layer 601 on the active material layer 501, see Figure 4A .

[0064] S133 , forming a second photoresist layer 820 on the source and drain electrode material layer 601 .

[0065] S134, using the second mask 920, the second photoresist layer 820 is formed into a first pattern, see Figure 4B .

[0066] In some embodiments, see Figure 4B The first pattern includes a plurality of eleventh openings 111 and a plurality of twelfth openings 112 . The eleventh openings 111 expose the source and drain material layer 601 . The depth of the twelfth openings 112 is less than the depth of the eleventh openings 111 .

[0067] S135, using an etching process to remove the source and drain electrode material layer 601 and the active material layer 501 corresponding to the eleventh opening 111, see Figure 4C .

[0068] S136: Using an ashing process, remove the second photoresist layer 820 in the twelfth opening 112, and thin the second photoresist layer 820 around the twelfth opening 112. Figure 4D .

[0069] In some embodiments, see Figure 4D In step S136 , the source-drain electrode material layer 601 corresponding to the twelfth opening 112 is exposed, and the second photoresist layer 820 is formed to correspond to the thirteenth opening 113 .

[0070] S137, using an etching process to remove the exposed source-drain electrode material layer 601, so as to form a source-drain electrode layer 600 and an active layer 500 including a plurality of source-drain electrode units 610 and a plurality of source-drain electrode wirings 620, see Figure 4E , Figure 4F .

[0071] In some embodiments, step S137 removes the source and drain material layer 601 corresponding to the thirteen openings 113 .

[0072] S138, removing the second photoresist layer 820, see Figure 4F .

[0073] In some embodiments, see Figure 4F , the orthographic projection of the source-drain electrode layer 600 on the active layer 500 is located within the active layer 500 .

[0074] In some embodiments, see Figure 4F In step S137 , since the source-drain wiring 620 also covers the active material layer 501 when it is formed, there is a redundant semiconductor 510 under the source-drain wiring 620 .

[0075] In some embodiments, the active material layer 501 can be any one of amorphous silicon, polycrystalline silicon, and metal oxide.

[0076] In some embodiments, the source and drain material layer 601 can be copper / molybdenum-titanium alloy, copper / titanium, etc., that is, the upper layer is copper, and the lower layer is molybdenum, titanium or an alloy thereof.

[0077] S200, forming a passivation layer 700 on the active layer 500 and the source-drain electrode layer 600, see Figure 2B .

[0078] In some embodiments, the material of the passivation layer 700 may be an inorganic insulating layer, such as a silicon nitride compound, a silicon oxygen compound, or a combination of any one or more of a silicon nitride and an oxygen compound.

[0079] S300, using a first photomask 910, forming a first photoresist layer 810 including a plurality of first openings 101 and a plurality of second openings 102 on the passivation layer 700, wherein the first openings 101 penetrate through the first photoresist layer 810 to expose the passivation layer 700, and the depth of the second openings 102 is less than the depth of the first openings 101, see Figure 2C .

[0080] In some embodiments, see Figure 2CThere are two second openings 102 in the figure. The second opening 102 on the left is the second opening 102 on a different cross-sectional view of the display panel 100 . Both of the second openings 102 are connected to the first opening 101 .

[0081] In some embodiments, step S300 includes:

[0082] S310a, using a first photomask 910, forming a first photoresist layer 810 including a plurality of first openings 101 and a plurality of second openings 102 on the passivation layer 700, wherein the first openings 101 penetrate through the first photoresist layer 810 to expose the passivation layer 700, and the depth of the second openings 102 is less than the depth of the first openings 101, see Figure 2C .

[0083] In some embodiments, see Figure 2C The second opening 102 is connected to the first opening 101.

[0084] In some embodiments, see Figure 2C The first light mask 910 is a halftone light mask, and the first light mask 910 includes a plurality of first light-transmitting areas 911, a plurality of second light-transmitting areas 912, and a plurality of third light-transmitting areas 913. The first light-transmitting areas 911 are fully light-transmitting areas, the second light-transmitting areas 912 are semi-light-transmitting areas, and the third light-transmitting areas 913 are non-light-transmitting areas. The first light-transmitting areas 911 correspond to any of the first openings 101, and the second light-transmitting areas 912 correspond to any of the second openings 102.

[0085] In some embodiments, step S300 includes:

[0086] S310b, using the first mask 910, forming a first photoresist layer 810 including a plurality of first openings 101, a plurality of second openings 102, a plurality of sixth openings 106, a plurality of seventh openings 107, and a plurality of eighth openings 108 on the passivation layer 700, see Figure 5A .

[0087] In some embodiments, see Figure 5A The first opening 101 penetrates the first photoresist layer 810 to expose the passivation layer 700. The depth of the second opening 102 is less than the depth of the first opening 101. The sixth opening 106 and the seventh opening 107 penetrate the first photoresist layer 810 to expose the passivation layer 700. The depth of the eighth opening 108 is less than the depth of the sixth opening 106. The sixth opening 106, the seventh opening 107, and the eighth opening 108 are connected to each other.

[0088] In some embodiments, the first light mask 910 in step S310b is similar to the first light mask 910 in step S310a, and is also a halftone mask, which is divided into a fully light-transmitting area, a semi-light-transmitting area and a non-light-transmitting area. Step S310b can be implemented by only setting different light-transmitting areas at corresponding positions. It is easy to understand and will not be repeated here.

[0089] S400, removing the exposed passivation layer 700, forming a plurality of fourth openings 104 on the passivation layer 700, wherein the fourth openings 104 expose the source and drain electrode layer 600, see Figure 2D .

[0090] In some embodiments, step S400 includes:

[0091] S410a, removing the exposed passivation layer 700, forming a plurality of fourth openings 104 on the passivation layer 700, wherein the fourth openings 104 expose the source and drain electrode layer 600, see Figure 2D .

[0092] In some embodiments, see Figure 2D , the fourth opening 104 exposes the source-drain unit 610 .

[0093] In some embodiments, step S400 includes:

[0094] S410b, removing the exposed passivation layer 700, forming a plurality of fourth openings 104, a plurality of ninth openings 109 and a plurality of tenth openings 110 on the passivation layer 700, wherein the fourth openings 104 expose the source-drain unit 610, the ninth openings 109 expose the gate wiring 320, and the tenth openings 110 expose the source-drain wiring 620, see Figure 5B .

[0095] In some embodiments, see Figure 5B , the sixth opening 106 corresponds to the ninth opening 109 , and the seventh opening 107 corresponds to the tenth opening 110 .

[0096] S500, using an ashing process, removing the first photoresist layer 810 corresponding to the second opening 102 to expose the passivation layer 700, see Figure 2E .

[0097] In some embodiments, step S500 includes:

[0098] S510a, using an ashing process, removing the first photoresist layer 810 corresponding to the second opening 102 to expose the passivation layer 700, see Figure 2E .

[0099] In some embodiments, step S500 includes:

[0100] S510b, using an ashing process, removing the first photoresist layer 810 corresponding to the second opening 102 and removing the first photoresist layer 810 corresponding to the eighth opening 108 to expose the passivation layer 700, see Figure 5C .

[0101] In some embodiments, see Figure 5C , the first photoresist layer 810 corresponding to the second opening 102 is removed to form a plurality of third openings 103 , and the first photoresist layer 810 corresponding to the eighth opening 108 is removed to form a plurality of fourteenth openings 114 , and the third openings 103 and the fourteenth openings 114 expose the passivation layer 700 .

[0102] In some embodiments, step S500 includes:

[0103] S510c, using an ashing process, removing the first photoresist layer 810 corresponding to the second opening 102 to form a plurality of third openings 103, wherein the third openings 103 expose the passivation layer 700, see Figure 5C .

[0104] S520c, using plasma dry etching to form a plurality of fifth openings 105 in the passivation layer 700 corresponding to the third opening 103, wherein the depth of the fifth opening 105 is less than the depth of the fourth opening 104, see Fig. 6A .

[0105] In some embodiments, a portion of the first photoresist layer 810 is suspended above the fifth opening 105. Fig. 7A .

[0106] In some embodiments, see Figure 2E In step S500 , while removing the first photoresist layer 810 corresponding to the second opening 102 and / or the eighth opening 108 , the first photoresist layer 810 around the second opening 102 and / or the eighth opening 108 is also thinned.

[0107] S600, forming an electrode material layer 1001 in the first photoresist layer 810, the passivation layer 700 and the fourth opening 104, see Figure 2F .

[0108] In some embodiments, step S600 includes:

[0109] S610a, forming an electrode material layer 1001 in the first photoresist layer 810, the passivation layer 700 and the fourth opening 104, see Figure 2F .

[0110] In some embodiments, step S600 includes:

[0111] S610b, forming an electrode material layer 1001 in the first photoresist layer 810, the passivation layer 700, the fourth opening 104, the ninth opening 109, and the tenth opening 110, see Figure 5D .

[0112] In some embodiments, step S600 includes:

[0113] S610c, forming an electrode material layer 1001 on the first photoresist layer 810, the passivation layer 700, the fifth opening 105 and the fourth opening 104, see Figure 6B .

[0114] In some embodiments, see Figure 7B Part of the first photoresist layer 810 is suspended above the fifth opening 105, so that the electrode material layer 1001 can be naturally broken at the fifth opening 105. When the first photoresist layer 810 is peeled off, the tearing of the electrode material layer 1001 is reduced, thereby avoiding damage to the electrode layer 1001.

[0115] In some embodiments, see Figure 6B , Figure 7B , part of the electrode material layer 1001 is located in the fifth opening 105 .

[0116] In some embodiments, see Figure 6C , Figure 7C , the depth of the fifth opening 105 is the same as the thickness of the electrode material layer 1001 located in the fifth opening 105 .

[0117] In some embodiments, see Figure 8 In the direction away from the fourth opening 104, the depth of the fifth opening 105 gradually increases, which is conducive to the natural fracture of the electrode layer 1000 around the fifth opening 105 when the electrode layer 1000 is formed. When the first photoresist layer 810 is peeled off, the tearing of the electrode material layer 1001 is reduced, thereby avoiding damage to the electrode layer 1000.

[0118] S700, peeling off the first photoresist layer 810 and the electrode material layer 1001 on the first photoresist layer 810 to form an electrode layer 1000, see Figure 2G .

[0119] In some embodiments, step S700 includes:

[0120] S710a, peeling off the first photoresist layer 810 and the electrode material layer 1001 on the first photoresist layer 810 to form an electrode layer 1000, see Figure 2G .

[0121] In some embodiments, step S700 includes:

[0122] S710b, peeling off the first photoresist layer 810 and the electrode material layer 1001 on the first photoresist layer 810 to form an electrode layer 1000 including a plurality of electrode units 1010 and a plurality of electrode traces 1020, see Figure 5E .

[0123] In some embodiments, step S700 includes:

[0124] S710c, peeling off the first photoresist layer 810 and the electrode material layer 1001 on the first photoresist layer 810 to form an electrode layer 1000 including a plurality of electrode units 1010 and a plurality of electrode traces 1020, at least a portion of the electrode layer 1000 is located in the fifth opening 105, see Figure 6C , Figure 7C .

[0125] In some embodiments, the electrode layer 1000 is a pixel electrode layer.

[0126] In some embodiments, see Figure 2C to Figure 2G In steps S310a, S410a, S510a, S610a and S710a, a set of steps is performed to make openings of different depths in the first photoresist layer 810 using a photomask. After the openings connected to the source and drain electrode layer 600 are opened, the photoresist corresponding to the electrode layer 1000 to be retained is removed by an ashing process, and then the electrode material layer 1001 is formed. This can reduce one photomask and simplify the manufacturing process of the display panel 100.

[0127] In some embodiments, see FIG. 5A to FIG. 5E Steps S310b, S410b, S510b, S610b, and S710b, while reducing one photomask, bridge the gate wiring 320 and the source-drain wiring 620 to form an electrode wiring 1020. The electrode wiring 1020 is electrically connected to the source-drain wiring 620 through the tenth opening 110, and the electrode wiring 1020 is electrically connected to the gate wiring 320 through the ninth opening 109.

[0128] In some embodiments, see FIG. 6A to FIG. 6C , see 7A to 7C In the steps S510c and S610c, part of the electrode material layer 1001 can be buried in the passivation layer 700, which can reduce the step and improve the flatness of the film layer. When the display panel 100 is a liquid crystal display panel 100, it is beneficial to the coating of the corresponding alignment layer, which is beneficial to the deflection of the liquid crystal and improves the display effect. In the step S610c, burying part of the electrode unit 1010 in the passivation layer 700 is taken as an example. The electrode unit 1010 and the electrode trace 1020 can be buried in the passivation layer 700. Please refer to Fig. 9 , further improving the flatness of the film.

[0129] When manufacturing the electrode layer, the present invention uses a mask to make openings of different depths in the first photoresist layer. After the opening connected to the source and drain electrode layer 600 is opened, the photoresist corresponding to the electrode layer to be retained is removed by an ashing process, and then an electrode material layer is formed. Finally, the electrode layer to be removed and the photoresist are peeled off to form an electrode layer. The passivation layer is punched and the electrode layer is formed simultaneously by a single mask process, which reduces the number of masks of the current display panel and simplifies the manufacturing process of the display panel.

[0130] See also Fig. 9 An embodiment of the present invention further provides a display panel 100 , and the display panel 100 is manufactured by any of the above-mentioned manufacturing methods of the display panel 100 .

[0131] The technical solution of the present invention is now described in conjunction with specific embodiments.

[0132] In this embodiment, please refer to Fig. 9 The display panel 100 includes: an active layer 500 and a source-drain electrode layer 600; a passivation layer 700, which is located on the active layer 500 and the source-drain electrode layer 600, and the passivation layer 700 includes a plurality of fourth openings 104 and a plurality of fifth openings 105; an electrode layer 1000 located on the passivation layer 700; wherein the depth of the fifth opening 105 is less than the depth of the fourth opening 104, the fourth opening 104 penetrates the passivation layer 700, the fourth opening 104 is connected to the fifth opening 105, the electrode layer 1000 is electrically connected to the source-drain electrode layer 600 through the fourth opening 104, and part of the electrode layer 1000 is located in the fourth opening 104.

[0133] Part of the electrode layer 1000 can be buried in the passivation layer 700, which can reduce the steps and improve the flatness of the film layer. When the display panel 100 is a liquid crystal display panel 100, the display panel 100 also includes a flat layer 1100 located on the electrode layer 100 and an alignment layer 1200 located on the flat layer 1100, which is conducive to the coating of the corresponding alignment layer 1200, is beneficial to the liquid crystal deflection, and improves the display effect.

[0134] In some embodiments, see Figure 6C , Figure 7C , part of the electrode layer 1000 is located in the fifth opening 105. The depth of the fifth opening 105 is the same as the thickness of the electrode material layer 1001 located in the fifth opening 105. The thickness of the electrode layer 1000 is equal to the depth of the fifth opening 105, which can further improve the flatness of subsequent film layers.

[0135] In some embodiments, see Figure 8 In the direction away from the fourth opening 104, the depth of the fifth opening 105 gradually increases, which is conducive to the natural fracture of the electrode layer 1000 around the fifth opening 105 when the electrode layer 1000 is formed. When the first photoresist layer 810 is peeled off, the tearing of the electrode material layer 1001 is reduced, thereby avoiding damage to the electrode layer 1000.

[0136] In some embodiments, see Fig. 9 The electrode unit 1010 and the electrode trace 1020 are both buried in the passivation layer 700, further improving the flatness of the film layer.

[0137] The present invention uses a photomask to make openings of different depths in the first photoresist layer when manufacturing the electrode layer. After openings connected to the source and drain layers are opened, the photoresist corresponding to the electrode layer to be retained is removed by an ashing process, and then an electrode material layer is formed. Finally, the electrode layer to be removed and the photoresist are peeled off to form the electrode layer. The passivation layer is punched and the electrode layer is formed simultaneously by a single photomask process, which reduces the number of photomasks of the current display panel and simplifies the manufacturing process of the display panel. Part of the electrode layer is located in the fifth opening. The depth of the fifth opening is the same as the thickness of the electrode material layer located in the fifth opening. The thickness of the electrode layer is equal to the depth of the fifth opening, which can further improve the flatness of the subsequent film layer.

[0138] The embodiment of the present invention discloses a display panel and a manufacturing method thereof; the manufacturing method of the display panel comprises: forming an active layer and a source-drain electrode layer, forming a passivation layer, using a first photomask to form a first photoresist layer including a first opening and a second opening on the passivation layer, wherein the first opening penetrates the first photoresist layer, the depth of the second opening is less than the depth of the first opening, removing the exposed passivation layer, forming a fourth opening on the passivation layer, removing the first photoresist layer corresponding to the second opening, forming an electrode material layer, and stripping the first photoresist layer and the electrode material layer located on the first photoresist layer; the present invention uses a photomask to make openings of different depths on the first photoresist layer, after forming the openings that expose the source-drain electrode layer, the photoresist corresponding to the electrode to be retained is removed, and then the electrode material layer is formed, and finally the electrode layer to be removed and the photoresist are stripped, and the passivation layer punching and the electrode layer formation are completed simultaneously by using a single photomask process, thereby reducing the number of photomasks.

[0139] The above is a detailed introduction to a display panel and a manufacturing method thereof provided in an embodiment of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for manufacturing a display panel, characterized in that: include: forming an active layer and a source-drain layer on a substrate; forming a passivation layer on the active layer and the source-drain electrode layer; Using a first photomask, forming a first photoresist layer including a plurality of first openings and a plurality of second openings on the passivation layer, wherein the first openings penetrate the first photoresist layer to expose the passivation layer, and the depth of the second openings is less than the depth of the first openings; removing the exposed passivation layer, and forming a plurality of fourth openings on the passivation layer, wherein the fourth openings expose the source and drain electrode layers; Using an ashing process, removing the first photoresist layer corresponding to the second opening to expose the passivation layer; forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening; The first photoresist layer and the electrode material layer on the first photoresist layer are peeled off to form an electrode layer.

2. The method for manufacturing a display panel according to claim 1, characterized in that: The second opening is communicated with the first opening.

3. The method for manufacturing a display panel according to claim 2, wherein: The step of removing the first photoresist layer corresponding to the second opening by an ashing process to expose the passivation layer comprises: Using an ashing process, removing the first photoresist layer corresponding to the second opening to form a plurality of third openings, wherein the third openings expose the passivation layer; Using plasma dry etching, the passivation layer corresponding to the third opening is formed into a plurality of fifth openings, wherein the depth of the fifth openings is less than the depth of the fourth openings; The step of forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening comprises: An electrode material layer is formed in the first photoresist layer, the passivation layer, the fifth opening, and the fourth opening.

4. The method for manufacturing a display panel according to claim 3, characterized in that: The step of forming a plurality of fifth openings in the passivation layer corresponding to the third opening by plasma dry etching, wherein the depth of the fifth openings is less than the depth of the fourth openings, comprises: Using plasma dry etching, forming a plurality of fifth openings in the passivation layer corresponding to the third openings, wherein the depth of the fifth openings is less than the depth of the fourth openings, and a portion of the first photoresist layer is suspended above the fifth openings; The step of forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening comprises: An electrode material layer is formed in the first photoresist layer, the passivation layer and the fourth opening, and the electrode material layer is broken around the fifth opening.

5. The method for manufacturing a display panel according to claim 4, characterized in that: The depth of the fifth opening is the same as the thickness of the electrode material layer located in the fifth opening.

6. The method for manufacturing a display panel according to claim 1, characterized in that: The first light mask is a halftone light mask, and the first light mask includes multiple first light-transmitting areas, multiple second light-transmitting areas, and multiple third light-transmitting areas. The first light-transmitting areas are fully light-transmitting areas, the second light-transmitting areas are semi-light-transmitting areas, and the third light-transmitting areas are non-light-transmitting areas. The first light-transmitting areas correspond to any of the first openings, and the second light-transmitting areas correspond to any of the second openings.

7. The method for manufacturing a display panel according to claim 1, characterized in that: The step of forming an active layer and a source-drain electrode layer on a substrate comprises: forming a gate layer including a plurality of first gates and a plurality of gate wirings on the substrate; forming a first insulating layer on the gate layer; An active layer and a source-drain layer including a plurality of source-drain units and a plurality of source-drain wirings are formed on the first insulating layer.

8. The method for manufacturing a display panel according to claim 7, characterized in that: The step of using a first photomask to form a first photoresist layer including a plurality of first openings and a plurality of second openings on the passivation layer, wherein the first openings penetrate the first photoresist layer to expose the passivation layer, and the depth of the second openings is less than the depth of the first openings comprises: Using a first photomask, forming a first photoresist layer including a plurality of first openings, a plurality of second openings, a plurality of sixth openings, a plurality of seventh openings, and a plurality of eighth openings on the passivation layer, wherein the first openings penetrate the first photoresist layer to expose the passivation layer, the depth of the second openings is less than the depth of the first openings, the sixth openings and the seventh openings penetrate the first photoresist layer to expose the passivation layer, the depth of the eighth openings is less than the depth of the sixth openings, and the sixth openings, the seventh openings, and the eighth openings are connected to each other; The step of removing the exposed passivation layer and forming a plurality of fourth openings on the passivation layer, wherein the fourth openings expose the source and drain layers, comprises: The exposed passivation layer is removed to form a plurality of fourth openings, a plurality of ninth openings and a plurality of tenth openings on the passivation layer, wherein the fourth opening exposes the source-drain unit, the ninth opening exposes the gate wiring, and the tenth opening exposes the source-drain wiring; The step of removing the first photoresist layer corresponding to the second opening by an ashing process to expose the passivation layer comprises: Using an ashing process, the first photoresist layer corresponding to the second opening is removed, and the first photoresist layer corresponding to the eighth opening is removed, so that the passivation layer is exposed; The step of forming an electrode material layer in the first photoresist layer, the passivation layer and the fourth opening comprises: An electrode material layer is formed in the first photoresist layer, the passivation layer, the fourth opening, the ninth opening, and the tenth opening.

9. The method for manufacturing a display panel according to claim 1, characterized in that: The orthographic projection of the source-drain electrode layer on the active layer is located within the active layer.

10. A display panel, characterized in that: The display panel is manufactured by the manufacturing method of the display panel according to any one of claims 3 to 5, and the display panel comprises: Active layer and source-drain layer; A passivation layer, located on the active layer and the source-drain electrode layer, the passivation layer comprising a plurality of fourth openings and a plurality of fifth openings; an electrode layer located on the passivation layer; Among them, the depth of the fifth opening is less than the depth of the fourth opening, the fourth opening penetrates the passivation layer, the fourth opening is connected to the fifth opening, the electrode layer is electrically connected to the source and drain layer through the fourth opening, and part of the electrode layer is located in the fifth opening.

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