Via hole control method and via hole etching device for display panel

Abstract

The present application relates to a via control method and a via etching device for a display panel, wherein a via is first etched on the surface of the second film layer from the second film layer toward the substrate. When the light intensity change rate of the product produced by etching the via reaches a first preset value, it indicates that the position of the etched via has reached the interface between the first film layer and the second film layer. Then the first film layer is etched to form a via. When etching the via in the second film layer, the etching position of the via can be roughly determined by monitoring the light intensity change rate of the product produced by the via. Determining the position of the via etching by the light intensity change rate of the product may result in errors caused by monitoring delays. Since the thickness of the first film layer is known, the material and density of the first film layer are relatively uniform, and therefore the rate of etching the first film layer is easy to control. In the final stage of etching the via, the depth of the via in the first film layer is controlled by controlling the etching time, which can improve the accuracy of the end position of etching the first via.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a via control method and a via etching device for a display panel. Background Art

[0002] In the manufacturing process of display panels, forming via holes by etching is a common process. However, in the prior art, etching inside the holes has certain defects, which seriously affects the yield of the display panels. Summary of the Invention

[0003] Based on this, it is necessary to provide a via control method and a via etching device for a display panel to address the above technical issues.

[0004] An embodiment of the present application provides a method for controlling a via hole of a display panel, comprising:

[0005] Providing a substrate, wherein a first film layer and a second film layer are stacked on one side of the substrate, and the second film layer is arranged on a side of the first film layer away from the substrate;

[0006] etching via holes on the surface of the second film layer in a direction from the second film layer toward the substrate;

[0007] When the light intensity variation rate of the product generated by etching the via hole reaches a first preset value, the etching depth of the via hole in the first film layer is controlled by controlling the etching time.

[0008] In one embodiment, the via includes a first via and a second via, and a first marking layer is further provided between the first film layer and the second film layer. The material of the first marking layer is different from the materials of the first film layer and the second film layer, and the first marking layer is provided on a path for etching the second via;

[0009] The etching of via holes on the surface of the second film layer in a direction from the second film layer toward the substrate includes:

[0010] In a direction from the second film layer toward the substrate, simultaneously etching a first via hole and a second via hole on the surface of the second film layer, and monitoring a light intensity change rate of a product of etching the first marking layer;

[0011] When the light intensity change rate of the product generated by etching the via hole reaches a first preset value, controlling the etching depth of the via hole in the first film layer by controlling the etching time includes:

[0012] When the light intensity change rate of the product of etching the first marking layer reaches the first preset value, the etching depth of the first via hole in the first film layer is controlled by controlling the etching time.

[0013] In this embodiment, since the etching locations of the first via hole and the second via hole are the same, the location of the first via hole can be determined based on the location of the second via hole.

[0014] As etching continues, the etching endpoint of the first via can be located in the first film layer. Since the material and thickness of the first film layer are known, the etching rate in the first film layer can be determined empirically or by calculation. In this case, the etching depth of the first via in the first film layer can be controlled simply by controlling the etching time, resulting in higher control accuracy.

[0015] In one embodiment, the first film layer and the second film layer include non-metallic materials, and the first marking layer includes metallic materials.

[0016] In this embodiment, the light intensities of the products after etching of the metal material and the non-metal material are greatly different, so monitoring is facilitated.

[0017] In one embodiment, the substrate includes a display area, the second via hole and the first marking layer are located in the display area, and the first marking layer is used to form a signal trace.

[0018] In this embodiment, the film layer forming the signal wiring is used as the first marking layer, and the etching position of the second via hole can be positioned using the existing film layer, which can simplify the process.

[0019] In one embodiment, the first via hole is located in the display area, a channel layer is provided between the substrate and the first film layer, and the channel layer is provided on a path for etching the first via hole. When the light intensity change rate of a product generated by etching the via hole reaches a first preset value, controlling the etching depth of the via hole in the first film layer by controlling the etching time includes:

[0020] When the light intensity change rate of the product produced by etching the first marking layer reaches the first preset value, the contact position between the first via hole and the channel layer is controlled by controlling the etching time.

[0021] In this embodiment, when etching reaches the last film layer near the channel layer, the contact position of the first via hole with the channel layer can be controlled by timing. This avoids errors in etching depth caused by monitoring the rate of change in light intensity during etching of the first via hole. Furthermore, it prevents the channel layer from being penetrated or not being etched during etching of the first via hole, effectively improving product yield.

[0022] In one embodiment, a second marking layer and a third film layer are sequentially provided on a side of the second film layer away from the substrate, the via further includes a third via, the second marking layer is provided on a path for etching the third via, and the second marking layer and the third film layer are made of different materials;

[0023] The etching of via holes on the surface of the second film layer in a direction from the second film layer toward the substrate includes:

[0024] In a direction from the second film layer toward the substrate, simultaneously etching the first via hole, the second via hole, and the third via hole on the surface of the third film layer, and monitoring the light intensity change rate of the product generated by etching the third film layer;

[0025] When the light intensity change rate of the product produced by etching the third film layer reaches a second preset value, the light intensity change rate of the product produced by etching the first marking layer is monitored.

[0026] In this embodiment, the light intensity change rate of the product generated by etching the third film layer is monitored when etching the third film layer. The light intensity change rate of the product generated by etching the first marking layer is monitored when etching the second film layer. This allows for accurate monitoring of the progress of etching the first, second, and third via holes throughout the entire etching process, thereby improving etching accuracy.

[0027] In one embodiment, when the light intensity change rate of the product generated by etching the via hole reaches a first preset value, controlling the etching depth of the via hole in the first film layer by controlling the etching time includes:

[0028] When the time for etching the via hole reaches a preset time, starting to monitor the light intensity change rate of the product generated by etching the via hole;

[0029] When the light intensity variation rate of the product generated by etching the via hole reaches the first preset value, the etching depth of the via hole in the first film layer is controlled by controlling the etching time.

[0030] In this embodiment, during the initial stages of etching the via hole, it is not necessary to continuously monitor the changes in the etching position of the via hole. When the position of the via hole is approximately nearing the end point of etching, the rate of change in the light intensity of the product generated by etching the via hole can be detected. This saves effort and simplifies program design.

[0031] In one embodiment, when the light intensity change rate of the product produced by etching the via reaches a first preset value, the etching depth of the via in the first film layer is controlled by controlling the etching time, and the etching time of the first film layer is determined by the thickness of the first film layer and the etching rate of the first film layer.

[0032] This embodiment provides a method for calculating the etching time of the first film layer.

[0033] In one embodiment, a third marking layer is provided between the first film layer and the second film layer. The material of the third marking layer is different from the materials of the first film layer and the second film layer. The third marking layer is located on the path of etching the via hole.

[0034] When the light intensity change rate of the product generated by etching the via hole reaches a first preset value, controlling the etching depth of the via hole in the first film layer by controlling the etching time includes:

[0035] When the light intensity change rate of the product produced by etching the third marking layer reaches the first preset value, the etching depth of the via hole in the first film layer is controlled by controlling the etching time.

[0036] In this embodiment, when it is necessary to precisely control the end point of the via hole, the third marking layer can be set on the side of the film layer where the end point of the via hole is located away from the substrate, so that the etching position of the via hole can be accurately determined, and then the etching end point of the via hole can be controlled by controlling the etching time, thereby improving the accuracy of the via hole end point position.

[0037] The present application also provides a via etching device, comprising:

[0038] an etching module, configured to etch via holes on a surface of the second film layer in a direction from the second film layer toward the substrate, wherein the first film layer and the second film layer are stacked on one side of the substrate, and the second film layer is disposed on a side of the first film layer away from the substrate;

[0039] The control module includes an endpoint monitor, and is used to control the etching depth of the via hole in the first film layer by controlling the etching time when the light intensity change rate of the product generated by etching the via hole reaches a first preset value.

[0040] The via control method for the display panel provided in the embodiment of the present application first etches a via on the surface of the second film layer from the second film layer toward the substrate. When the light intensity change rate of the product generated by etching the via reaches a first preset value, it indicates that the position of the via has reached the interface between the first film layer and the second film layer. Then the first film layer is etched to form the via. When etching the via in the first film layer, the etching position of the via can be roughly determined by monitoring the light intensity change rate of the product generated by the via. Judging the etching position of the via by the light intensity change rate of the product may have errors caused by monitoring delays. Since the thickness of the first film layer is known, the material and density of the first film layer are relatively uniform, and therefore the rate of etching the first film layer is easy to control. In the final stage of etching the via, the etching depth of the via in the first film layer is controlled by controlling the etching time, which can improve the accuracy of the end position of etching the first via. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0042] Figure 1 A flow chart of a method for controlling a via hole in a display panel provided in one embodiment of the present application;

[0043] Figure 2 A film layer structure diagram corresponding to a via hole control method for a display panel provided in one embodiment of the present application;

[0044] Figure 3 A time-light intensity curve diagram provided in an embodiment of the present application;

[0045] Figure 4 A film layer structure diagram corresponding to a via hole control method for a display panel provided in one embodiment of the present application;

[0046] Figure 5 A film layer structure diagram corresponding to a via hole control method for a display panel provided in one embodiment of the present application;

[0047] Figure 6 A time-light intensity curve diagram provided in an embodiment of the present application;

[0048] Figure 7 This is a film layer structure diagram corresponding to the via hole control method of the display panel provided in one embodiment of the present application.

[0049] Description of reference numerals:

[0050] Substrate 100 , first film layer 110 , second film layer 120 , third film layer 130 , fourth film layer 140 , via 200 , first via 210 , second via 220 , third via 230 , first marking layer 310 , second marking layer 320 , third marking layer 330 , channel layer 400 , gate layer 410 . DETAILED DESCRIPTION

[0051] To facilitate understanding of the present invention, the present invention will be described more fully below with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the accompanying drawings. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0052] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly attached to the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only.

[0053] In this document, spatially related terms such as "upper" and "lower" are defined with reference to the accompanying drawings. Therefore, it will be understood that "upper" and "lower" are used interchangeably. It will be understood that when a layer is referred to as being "on" another layer, it can be directly formed on the other layer, or intervening layers may also be present. Therefore, it will be understood that when a layer is referred to as being "directly on" another layer, there are no intervening layers therebetween.

[0054] In the drawings, the dimensions of layers and regions may be exaggerated for clarity. It will be understood that when a layer or element is referred to as being "on" another layer or substrate, the layer or element may be directly on the other layer or substrate, or intervening layers may be present. Additionally, it will be understood that when a layer is referred to as being "between" two layers, the layer may be the only layer between the two layers, or one or more intervening layers may be present. Like reference numerals refer to like elements throughout.

[0055] Hereinafter, although terms such as "first," "second," and the like may be used to describe various components, these components are not necessarily limited to the above terms. The above terms are used only to distinguish one component from another. It will also be understood that expressions used in the singular include plural expressions, unless the singular expression has a significantly different meaning in the context. In addition, in the following embodiments, it will also be understood that the terms "including" and / or "having" used herein indicate the presence of the stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0056] In the following embodiments, when a layer, region, or element is “connected,” it can be interpreted that the layer, region, or element is not only directly connected but also connected via other constituent elements interposed therebetween. For example, when a layer, region, element, etc. is described as being connected or electrically connected, the layer, region, element, etc. can be connected or electrically connected not only directly or directly but also via another layer, region, element, etc. interposed therebetween.

[0057] As used in this application, the term "and / or" includes any and all combinations of one or more of the associated listed items. When a phrase such as "at least one of..." follows a list of elements, it modifies the entire list, not the individual elements in the list.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this invention pertains. The terms used in this specification are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0059] It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0060] As described in the background art, the inventors have found through long-term research that it is difficult to monitor the endpoint of a via during via etching, which can easily lead to the via being etched too shallowly or too deeply.

[0061] See Figure 1 and Figure 2 The embodiment of the present application provides a method for controlling a via hole of a display panel to solve the above-mentioned problem. The method for controlling a via hole of a display panel includes:

[0062] S10, providing a substrate 100, wherein a first film layer 110 and a second film layer 120 are stacked on one side of the substrate 100, and the second film layer 120 is disposed on a side of the first film layer 110 away from the substrate 100;

[0063] S20, etching a via hole 200 on the surface of the second film layer 120 in a direction from the second film layer 120 toward the substrate 100;

[0064] S30 , when the light intensity variation rate of the product generated by etching the via hole 200 reaches a first preset value, the etching depth of the via hole 200 in the first film layer 110 is controlled by controlling the etching time.

[0065] In S10, the substrate 100 may serve as a support. The substrate 100 may be made of a material such as polyester or ceramic. The first film layer 110 and the second film layer 120 may be made of different materials. Both the first film layer 110 and the second film layer 120 may be made of inorganic materials. In one embodiment, the first film layer 110 and the second film layer 120 may be made of silicon nitride or silicon oxide. The first film layer 110 and the second film layer 120 may be made using two different processes.

[0066] In S20, the direction from the second film layer 120 to the substrate 100 may be a direction perpendicular to a line extending between the second film layer 120 and the substrate 100. Etching the via 200 begins from the surface of the second film layer 120 away from the substrate 100. Dry etching may be used to etch the via 200. Dry etching involves placing a specific gas under low pressure and applying a voltage to excite it into a plasma. The plasma then chemically etches or ion bombards the film layer, achieving the desired etching.

[0067] In S30, when the via 200 is formed by a dry etching process, that is, when the film layer is bombarded by plasma, the film layer is excited to produce particles such as atoms or ions. The product can be particles such as atoms or ions produced by the excitation of the film layer. The product can also be the reaction product of gas plasma and atoms or ions excited by the film layer. The product can be a certain element or a certain type of chemical bond. The light intensity change rate of the product can be monitored using an endpoint detector (EPD). The endpoint detector can collect light across the entire wavelength range. After determining the product to be monitored, the light intensity change rate of the spectrum corresponding to the product is extracted and monitored. The light intensity change rate can be used to determine the amount and rate of production of the product. The product produced by etching the via 200 can be obtained through experiments or analysis of the film layer before the etching process. During the etching process, different products can be monitored as needed. When the material of the film layer is silicon carbide or silicon oxide, the product produced by etching the via 200 can be carbon-oxygen bonds.

[0068] See Figure 3 Through monitoring, the corresponding relationship between the light intensity and time of the product can be obtained. Based on the corresponding relationship between light intensity and time, a time-light intensity curve can be plotted. Time can be the horizontal axis, and light intensity can be the vertical axis. The light intensity change rate can be the slope of the time-light intensity curve. The first preset value can be determined based on different film layers and different etching processes. In one embodiment, the absolute value of the first preset value can be 0.05. When the absolute value of the first preset value is less than or equal to 0.05, it indicates that the light intensity change rate of the product is relatively stable. In other words, the amount, rate, or type of the product generated during the etching process does not change significantly. When the absolute value of the first preset value is greater than or equal to 0.05, it indicates that the amount, type, or rate of the product generated during the etching process changes significantly. The first film layer 110 and the second film layer 120 are different film layers. In other words, the first film layer 110 and the second film layer 120 are manufactured using different processes. When the position for etching the via 200 reaches the interface between the first film layer 110 and the second film layer 120. The generation rate and amount of the product produced by etching the via hole 200 will be affected. Therefore, monitoring the light intensity change rate of the product will experience significant fluctuations. When the light intensity change rate of the product is greater than 0.05, it indicates that the light intensity change rate of the product is large. When the light intensity change rate of the product is greater than 0.05, it can be assumed that the location where the via hole 200 is etched is the interface between the first film layer 110 and the second film layer 120.

[0069] After the via 200 is etched to the interface between the first film layer 110 and the second film layer 120, etching of the first film layer 110 continues. The material and density of the first film layer 110 are relatively uniform. The thickness of the first film layer 110 is also known, so the etching rate of the first film layer 110 can be determined based on experience or calculation. By controlling the etching rate of the first film layer 110 over time, the etching depth of the via 200 in the first film layer 110 can also be controlled.

[0070] The via hole control method of the display panel provided in the embodiment of the present application first etches the via hole 200 on the surface of the second film layer 120 in the direction from the second film layer 120 toward the substrate 100. When the light intensity change rate of the product generated by etching the via hole 200 reaches a first preset value, it indicates that the position of etching the via hole 200 has reached the interface between the first film layer 110 and the second film layer 120. Then, the first film layer 110 is further etched to form the via hole 200. When etching the via hole 200 in the first film layer 110, the etching position of the via hole 200 can be roughly determined by monitoring the light intensity change rate of the product generated by the via hole 200. Determining the etching position of the via hole 200 by the light intensity change rate of the product may have errors caused by monitoring delays. Since the thickness of the first film layer 110 is known and the material and density of the first film layer 110 are relatively uniform, the etching rate of the first film layer 110 is easy to control. In the final stage of etching the via hole 200 , the etching depth of the via hole 200 in the first film layer 110 is controlled by controlling the etching time, thereby improving the accuracy of the end point position of etching the via hole 200 .

[0071] See Figure 4 In one embodiment, the via 200 includes a first via 210 and a second via 220. A first marking layer 310 is further disposed between the first film layer 110 and the second film layer 120. The material of the first marking layer 310 is different from that of the first film layer 110 and the second film layer 120. The first marking layer 310 is disposed on the path for etching the second via 220.

[0072] The step S20 includes: etching the first via hole 210 and the second via hole 220 simultaneously on the surface of the second film layer 120 in a direction from the second film layer 120 toward the substrate 100 , and monitoring the light intensity change rate of the product of etching the first marking layer 310 .

[0073] The step S30 includes: when the light intensity variation rate of the product of etching the first marking layer 310 reaches the first preset value, controlling the etching depth of the first via hole 210 in the first film layer 110 by controlling the etching time.

[0074] The positions of the first via hole 210 and the second via hole 220 are not limited. The first via hole 210 and the second via hole 220 can be located in the display area of ​​the display panel or in the non-display area of ​​the display panel. The first marking layer 310 can be stacked with the first film layer 110 and the second film layer 120. The first marking layer 310 is located on the path for etching the second via hole 220, that is, the first marking layer 310 will be etched during the etching process of the second via hole 220. The first marking layer 310 can be located only on the etching path of the second via hole 220. The first marking layer 310 may not be provided on the etching path of the first via hole 210.

[0075] The material of the first marking layer 310 is different from that of the first film layer 110 and the second film layer 120. Therefore, when the etching position of the second via hole 220 reaches between the first marking layer 310 and the second film layer 120, the composition and rate of the product generated by etching the second via hole 220 change. As a result, the rate of change of the light intensity of the product changes significantly.

[0076] In S20, when the first via hole 210 and the second via hole 220 are simultaneously etched on the surface of the second film layer 120, the etching processes are identical. That is, the etching processes for the first via hole 210 and the second via hole 220 are performed simultaneously. At this stage, since both the first via hole 210 and the second via hole 220 are formed in the second film layer 120, the etching rate for the first via hole 210 and the second via hole 220 are the same. The etching progress for the first via hole 210 and the second via hole 220 is the same. Before etching, the composition of the product produced when etching the first marking layer 310 can be determined. The rate of change in the light intensity of the product produced when etching the first marking layer 310 can then be monitored during the etching process. During the etching of the second film layer 120, since the first marking layer 310 has not yet been etched, the content of the product produced when etching the first marking layer 310 is very low or even absent. The light intensity of the product can be very low at this stage. The light intensity change rate of the product of the first marking layer 310 is also maintained at a substantially constant state.

[0077] In S30, when the light intensity change rate of the product produced by etching the first marking layer 310 reaches the first preset value, it indicates that the light intensity change rate of the product produced by etching the first marking layer 310 has significantly changed. It can be determined that the position of the second via 220 has reached the interface between the first marking layer 310 and the second membrane layer 120. Prior to this, since the etching positions of the first via 210 and the second via 220 were identical, the position of the first via 210 can be determined based on the position of the second via 220. When the light intensity change rate of the product produced by etching the first marking layer 310 reaches the first preset value, etching of the second via 220 can be stopped and etching of the first via 210 can be continued.

[0078] As etching continues, the etching endpoint of the first via hole 210 can be located at the first film layer 110. Since the material and thickness of the first film layer 110 are known, the etching rate in the first film layer 110 can be determined empirically or by calculation. In this case, the etching depth of the first via hole 210 in the first film layer 110 can be controlled simply by controlling the etching time, resulting in higher control accuracy.

[0079] In one embodiment, the first film layer 110 and the second film layer 120 include non-metallic materials. The first marking layer 310 includes a metal material. The light intensity of the products after etching of the metal material and the non-metallic material is relatively different, so it is easy to monitor. In one embodiment, the first film layer 110 and the second film layer 120 can be silicon carbide and silicon oxide, respectively. The first marking layer 310 can be metal molybdenum. Before etching the via 200, the monitoring target can be set to the light intensity change rate of the product of etching the metal molybdenum. When the light intensity change rate of the product of the metal molybdenum reaches the first preset value, the depth of the etching of the first via 210 in the first film layer 110 can be controlled by controlling the etching time, thereby controlling the depth of the first via 210.

[0080] In one embodiment, the substrate 100 includes a display area. The second via 220 and the first marking layer 310 are located in the display area. The first marking layer 310 is used to form a signal trace. The second via 220 can be used to connect different signal traces. The signal traces can be data lines or scan lines. The first marking layer 310 can also be made of a metal other than molybdenum. The first marking layer 310 can also be made of silver or copper. In typical dry etching processes, plasma etching has poor etching capabilities for metal materials but strong etching capabilities for films such as silicon carbide or silicon oxide. Therefore, when etching the first marking layer 310, significant damage to the first marking layer 310 is not caused, and the first marking layer 310 is not etched through. By using the film layer forming the signal trace as the first marking layer 310, the etching position of the second via 220 can be located using the existing film layer, thereby simplifying the process.

[0081] In one embodiment, the first via hole 210 is located in the display area. A channel layer 400 is provided between the substrate 100 and the first film layer 110. The channel layer 400 is provided on the path of etching the first via hole 210. The step S30 includes:

[0082] When the light intensity variation rate of the product of etching the first marking layer 310 reaches the first preset value, the contact position between the first via hole 210 and the channel layer 400 is controlled by controlling the etching time.

[0083] The channel layer 400 is disposed along the path of etching the first via hole 210, meaning that the first via hole 210 may terminate at the channel layer 400. For example, the first via hole 210 may connect the channel layer 400 to the source and drain layers of a thin-film transistor. When the light intensity variation rate of the product generated by etching the first marking layer 310 reaches the first preset value, the contact position of the first via hole 210 with the channel layer 400 is controlled by controlling the etching time. Therefore, when etching reaches the last film layer near the channel layer 400, the contact position of the first via hole 210 with the channel layer 400 can be controlled by controlling the etching time. This avoids errors in etching depth caused by monitoring the light intensity variation rate of the product generated by etching the first via hole 210. Furthermore, it prevents penetration or failure to etch the channel layer 400 during etching of the first via hole 210, effectively improving product yield.

[0084] See Figure 5 In one embodiment, a gate layer 410 is further provided between the first film layer 110 and the second film layer 120. For example, the gate layer 410 can be used to form a gate of a thin film transistor.

[0085] In one embodiment, a second marking layer 320 and a third film layer 130 are sequentially disposed on a side of the second film layer 120 away from the substrate 100. The via 200 further includes a third via 230. The second marking layer 320 is disposed along a path for etching the third via 230. The second marking layer 320 and the third film layer 130 are made of different materials.

[0086] The S20 includes:

[0087] S21, simultaneously etching the first via hole 210, the second via hole 220, and the third via hole 230 on the surface of the third film layer 130 in a direction from the second film layer 120 toward the substrate 100, and monitoring the light intensity change rate of the product of etching the third film layer 130;

[0088] S22 , when the light intensity change rate of the product produced by etching the third film layer 130 reaches a second preset value, monitoring the light intensity change rate of the product produced by etching the first marking layer 310 .

[0089] The second marking layer 320 can be made of a metal. The third film layer 130 can be made of a non-metallic material such as silicon nitride or silicon oxide. The second marking layer 320 can be located only along the path for etching the third via 230. In other words, the second marking layer 320 need not be located along the path for etching the first and second vias 210 and 220. The second marking layer 320 and the third film layer 130 are made of different materials. Therefore, when etching the third via 230 along the third film layer 130 toward the substrate 100, the products produced by etching the third film layer 130 and etching the second marking layer 320 are different. Therefore, during the etching of the third film layer 130, the rate of change of the light intensity monitoring the products produced by etching the third film layer 130 does not change much. However, when the etching position for etching the third via 230 reaches the interface between the third film layer 130 and the second marking layer 320, the amount and rate of the products produced by etching the third film layer 130 change significantly. Therefore, the light intensity variation rate of the product produced by etching the third film layer 130 varies greatly. In this case, it can be determined that the position of etching the third via hole 230 reaches between the third film layer 130 and the second marking layer 320.

[0090] In S21, the first via hole 210, the second via hole 220, and the third via hole 230 are simultaneously etched on the surface of the third film layer 130 away from the substrate 100. Simultaneously, the rate of change of light intensity of the product of the third film layer 130 can also be monitored. The product of the third film layer 130 can be obtained before the etching process.

[0091] In S22, when the rate of change in the light intensity of the product produced by etching the third film layer 130 reaches a second preset value, it indicates that the content or generation rate of the product produced by etching the third film layer 130 has significantly changed. At this point, it can be determined that the position for etching the third via 230 has reached the interface between the third film layer 130 and the second marking layer 320. Since the etching processes for the first via 210, the second via 220, and the third via 230 are performed simultaneously, and the first via 210, the second via 220, and the third via 230 were previously etched using the same film layer, it can be determined that the horizontal positions of the first via 210 and the second via 220 are the same as the horizontal positions of the third film layer 130 and the second marking layer 320. When the rate of change in the light intensity of the product produced by etching the third film layer 130 reaches the second preset value, etching of the third via 230 can be stopped, and etching of the first via 210 and the second via 220 can continue.

[0092] As etching continues, the process switches to monitoring the rate of change in light intensity of the product produced by etching the first marking layer 310. The second via 220 and the first via 210 will continue to extend through the second film layer 120. Since the first marking layer 310 is on the etching path of the second via 220, the position of etching the second via 220 will also reach the interface between the first marking layer 310 and the second film layer 120. When the rate of change in light intensity of the product produced by etching the first marking layer 310 reaches the first preset value, it indicates that the position of etching the first via 210 and the second via 220 has reached the interface between the second film layer 120 and the first marking layer 310. At this point, etching of the second via 220 can be stopped. The etching depth of the first via 210 in the first film layer 110 can then be controlled by controlling the etching time. This allows precise control of the etching position of the first via 210.

[0093] When etching the third film layer 130, the light intensity change rate of the product generated by etching the third film layer 130 is monitored. When etching the second film layer 120, the light intensity change rate of the product generated by etching the first marking layer 310 is monitored. Therefore, the progress of etching the first via hole 210, the second via hole 220, and the third via hole 230 during the entire etching process can be accurately monitored, thereby improving etching accuracy.

[0094] It is understandable that the size of the second preset value can be set according to actual conditions and is not limited here.

[0095] In one embodiment, a fourth film layer 140 is further provided at one end of the third film layer 130 away from the substrate 100. The fourth film layer 140 may be made of silicon nitride or silicon oxide. The first via 210, the second via 220, and the third via 230 may be etched starting from the position of the fourth film layer 140 away from the substrate 100.

[0096] In one embodiment, the second marking layer 320 may also be made of metallic molybdenum. The second marking layer 320 and the third via 230 may also be located in the display area. The second marking layer 320 may be used to form signal traces. The third via 230 may be used to connect signal traces on different layers.

[0097] See Figure 3 and Figure 6 In one embodiment, the S30 includes:

[0098] S31, when the time for etching the via hole 200 reaches a preset time, start monitoring the light intensity change rate of the product generated by etching the via hole 200;

[0099] S32 , when the light intensity change rate of the product generated by etching the via hole 200 reaches the first preset value, controlling the etching depth of the via hole 200 in the first film layer 110 by controlling the etching time.

[0100] In S31, the via hole 200 is typically etched to a relatively deep depth, taking a relatively long time, and the etching process will penetrate multiple film layers. During the initial stages of etching the via hole 200, it is not necessary to continuously monitor the changes in the etched position of the via hole 200. When the position of the via hole 200 is approximately nearing the end point of etching, the rate of change in the light intensity of the product produced by etching the via hole 200 is detected. This saves effort and simplifies program design. The preset time can be obtained based on experience or rough calculations.

[0101] In one embodiment, the etching time of the first film layer 110 is determined by the thickness of the first film layer 110 and the etching rate of the first film layer 110. The material and density of the first film layer 110 are highly consistent and uniform. Therefore, the etching rate of the first film layer 110 during the etching process can be obtained through experiments or calculations. The etching time of the first film layer 110 can be obtained by dividing the thickness of the first film layer 110 by the etching rate of the first film layer 110.

[0102] Figure 3 and Figure 7 The unit of time can be seconds. The endpoint monitor can be controlled to start monitoring the light intensity change rate of the product after a delay of 120 seconds. Figure 3 To monitor the time-intensity curve of carbon-nitrogen bonds, Figure 7 The time-intensity curve for monitoring the metallic molybdenum element.

[0103] See Figure 7 In one embodiment, a third marking layer 330 is provided between the first film layer 110 and the second film layer 120. The material of the third marking layer 330 is different from that of the first film layer 110 and the second film layer 120. The third marking layer 330 is located on the path of etching the via hole 200.

[0104] The 30 includes:

[0105] When the light intensity variation rate of the product produced by etching the third marking layer 330 reaches the first preset value, the etching depth of the via hole 200 in the first film layer 110 is controlled by controlling the etching time.

[0106] The third marking layer 330 can be located in the display area or in the non-display area. The material of the third marking layer 330 is not limited, as long as the third marking layer 330 is different from the material of the first film layer 110 and the second film layer 120. When etching the via 200, the via 200 can pass through the third marking layer 330. When the light intensity change rate of the product of etching the third marking layer 330 reaches the first preset value, it can be determined that the etching position of the via 200 is between the third marking layer 330 and the second film layer 120. Then, the etching depth of the via 200 in the first film layer 110 is controlled by controlling the etching time. It can be understood that the size of the first preset value can be set according to actual conditions.

[0107] When it is necessary to precisely control the end point of the via hole 200, the third marking layer 330 can be set on the side of the film layer where the end point of the via hole 200 is located away from the substrate 100, so that the etching position of the via hole 200 can be accurately determined, and then the etching end point of the via hole 200 can be controlled by controlling the etching time, thereby improving the accuracy of the end point position of the via hole 200.

[0108] Based on the same inventive concept, an embodiment of the present application also provides a via etching device. The via etching device includes an etching module and a control module. The etching module is used to etch a via 200 on the surface of the second film layer 120 in the direction from the second film layer 120 toward the substrate 100. A first film layer 110 and a second film layer 120 are stacked on one side of the substrate 100. The second film layer 120 is arranged on the side of the first film layer 110 away from the substrate 100. The control module includes an endpoint monitor, which is used to control the etching depth of the via 200 in the first film layer 110 by controlling the etching time when the light intensity change rate of the product generated by etching the via 200 reaches a first preset value. The via etching device can improve the accuracy of the end point position of the via 200.

[0109] The present application also provides a display device. The display device can be manufactured using the via hole 200 etching method provided in the above embodiment. The display device in the embodiment of the present application can be an OLED display device, a QLED display device, an electronic paper, a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigation system, a wearable device, an Internet of Things device, or any other product or component with a display function, and the embodiments disclosed in the present application are not limited thereto.

[0110] It should be understood that although the steps in the flowcharts of the accompanying drawings are shown sequentially as indicated by the arrows, these steps are not necessarily executed sequentially in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least some of the steps in the accompanying drawings may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times. The order of execution of these steps or stages is not necessarily sequential, but can be executed in rotation or alternation with other steps or at least a portion of steps or stages in other steps.

[0111] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0112] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A method for controlling a via hole of a display panel, characterized in that: include: A substrate (100) is provided, wherein a first film layer (110) and a second film layer (120) are stacked on one side of the substrate (100), and the second film layer (120) is arranged on a side of the first film layer (110) away from the substrate (100); a channel layer (400) is arranged between the substrate (100) and the first film layer (110), and a first marking layer (310) is arranged between the first film layer (110) and the second film layer (120); the first marking layer (310) includes a metal material, and the first marking layer (310) is used to form a signal trace; Etching a via hole (200) on the surface of the second film layer (120) in a direction from the second film layer (120) toward the substrate (100); When the light intensity change rate of the product generated by etching the via hole (200) reaches a first preset value, the etching depth of the via hole (200) in the first film layer (110) is controlled by controlling the etching time; The light intensity change rate of the product produced by etching the first marking layer (310) is monitored; when the light intensity change rate of the product produced by etching the first marking layer (310) reaches the first preset value, the contact position of the via hole (200) and the channel layer (400) is controlled by controlling the etching time.

2. The method for controlling a via hole of a display panel according to claim 1, wherein: The via hole (200) comprises a first via hole (210) and a second via hole (220); the material of the first marking layer (310) is different from the materials of the first film layer (110) and the second film layer (120); the first marking layer (310) is arranged on a path for etching the second via hole (220); The etching of a via hole (200) on the surface of the second film layer (120) in a direction from the second film layer (120) toward the substrate (100) comprises: In a direction from the second film layer (120) toward the substrate (100), simultaneously etching a first via hole (210) and a second via hole (220) on the surface of the second film layer (120), and monitoring a light intensity change rate of a product generated by etching the first marking layer (310); When the light intensity change rate of the product generated by etching the via hole (200) reaches a first preset value, controlling the etching depth of the via hole (200) in the first film layer (110) by controlling the etching time includes: When the light intensity variation rate of the product of etching the first marking layer (310) reaches the first preset value, the etching depth of the first via hole (210) in the first film layer (110) is controlled by controlling the etching time.

3. The method for controlling a via hole of a display panel according to claim 2, wherein: The first film layer (110) and the second film layer (120) include non-metallic materials.

4. The method for controlling a via hole of a display panel according to claim 3, wherein: The substrate (100) comprises a display area, and the second via hole (220) and the first marking layer (310) are located in the display area.

5. The method for controlling a via hole of a display panel according to claim 4, wherein: The first via hole (210) is located in the display area, and the channel layer (400) is arranged on the path for etching the first via hole (210).

6. The method for controlling a via hole of a display panel according to claim 2, wherein: A second marking layer (320) and a third film layer (130) are sequentially provided on a side of the second film layer (120) away from the substrate (100); the via hole (200) further comprises a third via hole (230); the second marking layer (320) is provided on a path for etching the third via hole (230); and the second marking layer (320) and the third film layer (130) are made of different materials; The etching of a via hole (200) on the surface of the second film layer (120) in a direction from the second film layer (120) toward the substrate (100) comprises: In a direction from the second film layer (120) toward the substrate (100), the first via hole (210), the second via hole (220), and the third via hole (230) are simultaneously etched on the surface of the third film layer (130), and the light intensity change rate of a product generated by etching the third film layer (130) is monitored; When the light intensity change rate of the product produced by etching the third film layer (130) reaches a second preset value, the light intensity change rate of the product produced by etching the first marking layer (310) is monitored.

7. The method for controlling a via hole of a display panel according to claim 1, wherein: When the light intensity change rate of the product generated by etching the via hole (200) reaches a first preset value, controlling the etching depth of the via hole (200) in the first film layer (110) by controlling the etching time includes: When the time for etching the via hole (200) reaches a preset time, starting to monitor the light intensity change rate of a product generated by etching the via hole (200); When the light intensity change rate of the product generated by etching the via hole (200) reaches the first preset value, the etching depth of the via hole in the first film layer (110) is controlled by controlling the etching time.

8. The method for controlling a via hole of a display panel according to claim 1, wherein: When the light intensity change rate of the product generated by etching the via hole (200) reaches a first preset value, the etching depth of the via hole (200) in the first film layer (110) is controlled by controlling the etching time, and the etching time of the first film layer (110) is determined by the thickness of the first film layer (110) and the etching rate of the first film layer (110).

9. The method for controlling a via hole of a display panel according to claim 1, wherein: A third marking layer (330) is provided between the first film layer (110) and the second film layer (120); the material of the third marking layer (330) is different from the materials of the first film layer (110) and the second film layer (120); and the third marking layer (330) is located on a path for etching the via hole (200); When the light intensity change rate of the product generated by etching the via hole (200) reaches a first preset value, controlling the etching depth of the via hole (200) in the first film layer (110) by controlling the etching time includes: When the light intensity change rate of the product produced by etching the third marking layer (330) reaches the first preset value, the etching depth of the via hole (200) in the first film layer (110) is controlled by controlling the etching time.

10. A via hole etching device, used to execute the via hole control method of a display panel according to any one of claims 1 to 9, characterized in that: The via-hole etching device comprises: An etching module, for etching a via hole (200) on the surface of the second film layer (120) in a direction from the second film layer (120) toward the substrate (100), wherein the first film layer (110) and the second film layer (120) are stacked on one side of the substrate (100), and the second film layer (120) is arranged on a side of the first film layer (110) away from the substrate (100); A control module includes an endpoint monitor, and is used to control the etching depth of the via hole (200) in the first film layer (110) by controlling the etching time when the light intensity change rate of the product generated by etching the via hole (200) reaches a first preset value.

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