Conductive film and preparation method thereof, electronic product cover plate and electronic product

Abstract

The present invention provides a conductive film and a preparation method thereof, an electronic product cover and an electronic product, and relates to the field of thin film technology. The present invention provides a conductive film, which is provided on the surface of a non-metallic substrate and on the surface of the Cr film layer. x C y N film layer, wherein the Cr film layer and CrSi x C y The limitation of the thickness of each N film layer and the ratio of the two film layers, as well as the control of CrSi x C y The content of Si and C in the N film layer makes the conductive film have low resistance, high hardness and friction resistance, which can effectively avoid the quality reliability problem caused by long-term use. The present invention also provides a method for preparing the above conductive film. By adopting the ICP assisted magnetron sputtering method, the density of the film can be improved, so that the gap between the Cr film layer and the non-metallic substrate, the CrSi x C y There is good bonding between the N film layer and the Cr film layer.

Description

Technical Field

[0001] The present invention relates to the field of thin film technology, and in particular to a conductive film and a preparation method thereof, an electronic product cover plate and an electronic product. Background Art

[0002] With the increase in consumer demand and the rapid development of manufacturing and processing technology, consumers have put forward more stringent requirements for electronic consumer products such as smart watches. It is of great significance to use conductive films to give non-metallic materials conductive charging functions. Conventional conductive films cannot simultaneously meet the stringent test requirements of low resistance, friction resistance and high hardness. For example, 202010714713.X discloses a preparation process of high-power unipolar pulsed magnetron sputtering CrSiCN film, the steps of which are base ion plating (Cr) deposition, followed by transition layer (CrN) deposition, and composite layer (CrSiCN) deposition, and the thickness ratio of the three coatings is reasonably controlled to be 1:1:5, so that the coating is closely bonded to the substrate surface and has excellent wear resistance and corrosion resistance. Further research found that although the above-mentioned composite layer has high hardness, the only drawback is that the resistance is very high, the effect in realizing the conductive function is poor, and the metallic luster is dark and the visibility is poor. Therefore, there is an urgent need for a conductive film that can simultaneously have the characteristics of low resistance, friction resistance, high hardness, high brightness and the like.

[0003] In view of this, the present invention is proposed. Summary of the Invention

[0004] The first object of the present invention is to provide a conductive film to alleviate the technical problem in the prior art of lacking a conductive film having the characteristics of low resistance, friction resistance, high hardness, high brightness, etc.

[0005] The second object of the present invention is to provide a method for preparing the above-mentioned conductive film.

[0006] A third object of the present invention is to provide an electronic product cover comprising the above-mentioned conductive film.

[0007] A fourth object of the present invention is to provide an electronic product comprising the above-mentioned electronic product cover.

[0008] In order to achieve the above object, the technical solution of the present invention is as follows:

[0009] The present invention provides a conductive film, which comprises a Cr film layer arranged on the surface of a non-metallic substrate and a CrSi film arranged on the surface of the Cr film layer. x C y N film layer composition;

[0010] The thickness of the Cr film layer is 0.3-0.5 μm, and the CrSi x C yThe thickness of the N film layer is 0.8-1.3 μm, and the Cr film layer and the CrSi x C y The thickness ratio of the N film layer is 1:(2.25-3.00);

[0011] The CrSi x C y In N, x is 0.8-1.2, and y is 0.5-1.0.

[0012] Furthermore, based on the above technical solution of the present invention, the Cr film layer and the CrSi x C y The thickness ratio of the N film layer is 1:(2.30-2.80);

[0013] Preferably, the thickness of the Cr film layer is 0.35-0.45 μm, and the CrSi x C y The thickness of the N film layer is 0.9-1.2μm;

[0014] Preferably, the CrSi x C y In the N film layer, x is 0.9-1.1 and y is 0.6-0.9;

[0015] Preferably, the non-metallic substrate includes any one of a ceramic substrate, a sapphire substrate or a glass substrate.

[0016] Furthermore, based on the above technical solution of the present invention, the Cr film layer and the CrSi x C y The thickness ratio of the N film layer is 1:2.50;

[0017] Preferably, the thickness of the Cr film layer is 0.4 μm, and the CrSi x C y The thickness of the N film layer is 1.0 μm;

[0018] Preferably, the CrSi x C y In the N film layer, x is 1.0 and y is 0.8.

[0019] The present invention also provides a method for preparing the conductive film, comprising the following steps:

[0020] Provide non-metallic substrates;

[0021] Depositing a Cr film layer on the surface of the non-metallic substrate by an ICP-assisted magnetron sputtering method;

[0022] CrSi is deposited on the surface of the Cr film layer of the non-metallic substrate by using an ICP-assisted magnetron sputtering method.x C y N film layer to obtain a conductive thin film.

[0023] Furthermore, based on the above technical solution of the present invention, when depositing the Cr film layer, a Cr target is used as a sputtering source, argon is used as a working gas, the argon flow rate is 50-250sccm, the sputtering power is 7-12kW, the deposition time is 1000-3000s, and the ICP input power is 1.0-3.0kW.

[0024] Furthermore, on the basis of the above technical solution of the present invention, CrSi is deposited x C y For the N film layer, Cr target, Si target and C target were used as sputtering sources, nitrogen was used as the reaction gas, argon was used as the working gas, the nitrogen flow rate was 150-350 sccm, the argon flow rate was 50-250 sccm, the Cr target sputtering power was 7-12 kW, the Si target sputtering power was 7-12 kW, the C target sputtering power was 5-10 kW, and the deposition time was 1000-3000 s.

[0025] Furthermore, on the basis of the above technical solution of the present invention, CrSi is deposited x C y For the N film layer, the ICP input power of the Cr target, Si target and C target is 1.0-3.0kW, and the flow rate of argon gas is 150-350sccm.

[0026] Furthermore, based on the above technical solution of the present invention, the method further includes the step of vacuum exhausting the coating chamber of the magnetron sputtering machine before magnetron sputtering.

[0027] Preferably, before magnetron sputtering, the method further includes steps of cleaning the ICP and the non-metallic substrate.

[0028] The present invention also provides an electronic product cover, comprising a non-metallic substrate and a conductive film disposed on the surface of the non-metallic substrate or a conductive film obtained by the above-mentioned preparation method.

[0029] The present invention also provides an electronic product, comprising the above-mentioned electronic product cover.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] (1) The present invention provides a conductive film comprising a Cr film layer and a CrSi film layer disposed on the surface of the Cr film layer. x C y N film layer, wherein the Cr film layer and CrSi x C yThe limitation of the thickness of each N film layer and the ratio of the two film layers, as well as the control of CrSi x C y The Si and C contents in the N film layer enable the conductive film to simultaneously exhibit low resistance, high hardness, and friction resistance, effectively avoiding quality reliability issues caused by friction during long-term use. Furthermore, the conductive film also exhibits a high-brightness metallic luster. Products made using the above conductive film can meet actual customer requirements.

[0032] (2) The present invention provides a method for preparing the above-mentioned conductive film, which can improve the density of the film by adopting the ICP assisted magnetron sputtering method, so that the gap between the Cr film layer and the non-metallic substrate, the CrSi x C y The N film layer and the Cr film layer have good bonding strength, and the resulting conductive film has low resistance, high hardness and friction resistance.

[0033] (3) The present invention also provides an electronic product cover, comprising a non-metallic substrate and a conductive film disposed on the surface of the non-metallic substrate, or a conductive film obtained using the above-described preparation method. Given the advantages of the above-described conductive film, the electronic product cover has the same advantages, and the electronic product cover made of the non-metallic substrate has excellent charging performance.

[0034] (4) The present invention further provides an electronic product including the above-mentioned electronic product cover. In view of the advantages of the above-mentioned electronic product cover, the electronic product including the same also has the same advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0036] Figure 1 Schematic diagram of the structure of the non-metallic substrate front surface area to be coated (a), the non-metallic substrate back surface area to be coated (b) and the accompanying coating sheet (c) of the same material according to one embodiment of the present invention. DETAILED DESCRIPTION

[0037] The embodiments of the present invention will be described in detail below in conjunction with the embodiments and examples, but it will be understood by those skilled in the art that the following embodiments and examples are only used to illustrate the present invention and should not be considered as limiting the scope of the present invention. If specific conditions are not specified, the conditions according to conventional conditions or manufacturer's recommendations are followed. If the manufacturer of the reagents or instruments used is not specified, they are all conventional products that can be purchased commercially.

[0038] According to a first aspect of the present invention, a conductive film is provided. The conductive film comprises a Cr film layer provided on a surface of a non-metallic substrate and a CrSi film provided on the surface of the Cr film layer. x C y N film layer composition;

[0039] The thickness of Cr film is 0.3-0.5μm, CrSi x C y The thickness of the N film layer is 0.8-1.3 μm, and the Cr film layer and the CrSi x C y The thickness ratio of the N film layer is 1:(2.25-3);

[0040] CrSi x C y In the N film layer, x is 0.8-1.2 and y is 0.5-1.0.

[0041] The conductive film provided by the present invention is only composed of a Cr film layer and a CrSi film layer arranged on the surface of the Cr film layer. x C y The conductive film is composed of a Cr film layer and does not contain other film structures such as CrN. The conductive film uses a Cr film layer as a base layer, which directly contacts the surface of the non-metallic substrate, improving the bonding strength between the conductive film and the non-metallic substrate, ensuring the reliability of the conductive film. The Cr film layer can also effectively reduce the resistance of the non-metallic substrate coating area, giving the non-metallic substrate extremely strong conductivity. CrSi x C y The N film layer is mainly used to improve the hardness and friction resistance of the conductive film. x C y The N film layers all contain metallic Cr, which can prevent the bonding force between the two film layers from being significantly reduced, and is also beneficial to the ease of implementation and cost reduction of actual processing and manufacturing.

[0042] Cr film and CrSi x C y The thickness of the N film layer directly determines the performance of the conductive film, so the thickness of the Cr film layer and the CrSi x C yThe thickness of the N film needs to be limited to a specific value range. Typical but non-limiting thicknesses of the Cr film are 0.3μm, 0.35μm, 0.4μm, 0.45μm or 0.5μm. x C y The typical but non-limiting thickness of the N film layer is 0.8μm, 0.9μm, 1.0μm, 1.1μm, 1.2μm or 1.3μm. If the thickness of the Cr film layer is too thick (greater than 0.5μm), although the conductive performance of the conductive film is improved, the thickness of the conductive film will increase, which will prolong the film formation time, waste film materials, reduce efficiency, increase costs, and be detrimental to industrial production. It will also lead to poor overall appearance of the conductive film and increased reliability risks, such as poor pinholes, loss of electroplating, film breakage, affected glass strength, etc.; if the thickness of the Cr film layer is too thin (less than 0.3μm), the impedance of the non-metallic substrate coating area is high and the conductivity is extremely weak. If the CrSi x C y If the thickness of the N film layer is too thick (greater than 1.3μm), it will also take a long time to form the film, waste film materials, reduce efficiency, increase costs, and be unfavorable for industrial production. It will also lead to poor appearance of the conductive film as a whole and increase the reliability risk, such as poor blisters, plating loss, film cracking, and affected glass strength. More importantly, the friction resistance will be correspondingly deteriorated, and the metallic gloss brightness of the conductive film will decrease. x C y The thickness of the N film layer is too thin (less than 0.8 μm), and the hardness and other properties of the conductive film do not meet the requirements.

[0043] Cr film and CrSi x C y It is not enough to only have the thickness of the N film layer reach the above film thickness. It is also necessary to make the Cr film layer and the CrSi x C y The thickness ratio of the N film layer meets the specific requirements, that is, the thickness ratio of the Cr film layer to the CrSi x C y The thickness ratio of N film layer is 1:(2.25-3.00). x C y Typical but non-limiting thickness ratios of the N film layer are 1:2.25, 1:2.30, 1:2.40, 1:2.50, 1:2.60, 1:2.70, 1:2.80, 1:2.90 or 1:3.00.

[0044] In addition to controlling the Cr film and CrSi x C y The thickness of N film layer and the thickness of Cr film layer and CrSi x C y In addition to the thickness ratio of the N film layer, it must also meet the CrSi x Cy The content of Si and C in the N film layer, that is, x is 0.8-1.2, y is 0.5-1.0. CrSi x C y Typical but non-limiting contents of Si and C in the N film layer are x is 0.8, 0.85, 0.9, 0.95, 1.0, 1.05, 1.1, 1.15 or 1.2, and y is 0.5, 0.55, 0.6, 0.65, 0.7, 0.75, 0.8, 0.85, 0.9, 0.95 or 1.0.

[0045] The reason for controlling the content of Si and C is that the content of C has a great influence on the x C y Effect of N film hardness and Si content on CrSi x C y The friction performance of the N film layer is greatly affected. The specific effects are as follows: When C elements are doped into CrN, as the C elements increase, C atoms break the Cr-N bonds and form Cr-C and CN bonds, which hinder the growth of CrN crystals and reduce the crystallinity of the CrCN film. A small amount of C increases the hardness of the CrN film, while excessive C reduces it. Because the C element is added to the CrN film, Cr-C, sp2C-C(N) and sp3C-C(N) bonds are generated, which will form a multi-cluster structure in the original CrN coating, play a role of dispersion strengthening, promote the refinement of the CrN film grains, and increase the hardness of the film. When the C content is too high, the surface of the film is covered with a layer of amorphous carbon, resulting in a decrease in its hardness. When Si and C are added to the CrN film at the same time, Si and C form solid solutions respectively, or exist in the film lattice or grain boundaries in the form of amorphous Si3N4 and graphite carbon, which will make the CrSi x C y Amorphous carbon and SiN on the surface of N film x The formation of amorphous SiN x It can act as a solid lubricant, thereby reducing the friction coefficient, and the easy-to-shear friction layer formed by its friction hydration reaction can play a lubricating role, which is also conducive to reducing the friction coefficient.

[0046] Therefore, only the Cr film and CrSi x C y The N film layer can only meet the thickness requirements of each layer at the same time, and the thickness ratio of the two layers is x C y Only when the Si and C contents in the N film meet the above ranges can the resulting conductive film simultaneously exhibit low resistance, high hardness, and friction resistance, effectively avoiding quality reliability issues that may arise from prolonged use. Furthermore, the conductive film exhibits a high-brightness metallic luster.

[0047] As an optional embodiment of the present invention, the Cr film layer and the CrSix C y The thickness ratio of the N film layer is 1:(2.30-2.80), preferably 1:2.50.

[0048] As an optional embodiment of the present invention, the thickness of the Cr film layer is 0.35-0.45 μm, and the thickness of the CrSi film layer is 0.35-0.45 μm. x C y The thickness of the N film layer is 0.9-1.2μm;

[0049] Preferably, the thickness of the Cr film layer is 0.4 μm, and the thickness of the CrSi film layer is 0.4 μm. x C y The thickness of the N film layer is 1.0 μm.

[0050] As an optional embodiment of the present invention, CrSi x C y In the N film layer, x is 0.9-1.1 and y is 0.6-0.9;

[0051] Preferably, CrSi x C y In N, x is 1.0 and y is 0.8.

[0052] By Cr film and CrSi x C y N film thickness and CrSi x C y Further limiting the content of Si and C in the N film layer enables the conductive film to have better performance in terms of conductivity, hardness and friction resistance.

[0053] The non-metallic substrate may be a material with poor electrical conductivity or insulating properties. As an optional embodiment of the present invention, the non-metallic substrate includes any one of a ceramic substrate, a sapphire substrate or a glass substrate.

[0054] According to a second aspect of the present invention, there is also provided a method for preparing the above-mentioned conductive film, comprising the following steps:

[0055] Provide non-metallic substrates;

[0056] Depositing a Cr film layer on the surface of the non-metallic substrate by an ICP-assisted magnetron sputtering method;

[0057] CrSi is deposited on the surface of the Cr film layer of the non-metallic substrate by using an ICP-assisted magnetron sputtering method. x C y N film layer to obtain a conductive thin film.

[0058] Different from the traditional magnetron sputtering method, the present invention adopts the inductively coupled plasma (ICP) assisted magnetron sputtering method, that is, the high-energy particles in the ICP technology can bombard the film particles that are not firmly bonded at any time, and through the transfer of energy, the deposited particles can obtain greater kinetic energy, thereby improving the law of nucleation and growth; it can also have a compacting effect on the film structure at any time, making the film grow denser. In the magnetron sputtering process, ICP assisted film formation can improve the density of the film, so that the Cr film layer and the non-metallic substrate, CrSi x C y There is good bonding between the N film layer and the Cr film layer. x C y The bonding strength between the N film layer and the Cr film layer will not be weakened due to the lack of a transition layer (such as a CrN film layer), and the hardness performance is good.

[0059] The conductive film produced using the above-described preparation method of the present invention simultaneously exhibits low resistance, high hardness, and friction resistance, as well as a bright metallic luster. Generally speaking, the thicker the metal film, the brighter the metallic luster. This application controls the overall thickness of the conductive film to less than 2 μm while also controlling the thickness of the Cr film layer to 0.3-0.5 μm. This ensures a bright metallic luster while meeting other performance requirements.

[0060] The equipment used for magnetron sputtering is not specifically limited, and common magnetron sputtering equipment in the art can be used, including but not limited to the Guangchi 1650 sputtering coating machine.

[0061] Before magnetron sputtering, the process also includes a step of vacuum exhausting the coating chamber of the magnetron sputtering machine used to ensure the quality of the deposited film layer.

[0062] As an optional embodiment of the present invention, the initial vacuum degree of the coating is less than 1.0*10^-3Pa, ensuring that the impurity gas in the coating cavity is low and improving the density of the film structure.

[0063] To ensure uniform film thickness distribution, the drum speed within the coating chamber is also limited. As an optional embodiment of the present invention, the drum speed within the coating chamber is 70-90 rpm. Typical but non-limiting speeds are 70 rpm, 75 rpm, 80 rpm, 85 rpm, or 90 rpm.

[0064] As an optional embodiment of the present invention, the method further includes the steps of cleaning the ICP and the non-metallic substrate before magnetron sputtering.

[0065] As a preferred embodiment of the present invention, ICP cleaning is performed after ICP is started, the ICP power is set to 1.0-3.0kW, the flow rate of argon is 100-400sccm, and at the same time, in order to oxidize and remove dirt and residual glue on the surface of the product, the flow rate of oxygen is 100-300sccm.

[0066] It should be noted that sccm (Standard Cubic Centimeter per Minute), namely mL / min or cm 3 / min (milliliters per minute), for example, if 100 sccm of argon is introduced, it means that 100 mL of argon is introduced per minute.

[0067] During ICP cleaning, a typical but non-limiting ICP power is 1.0 kW, 1.5 kW, 2.0 kW, 2.5 kW, or 3.0 kW; a typical but non-limiting argon flow rate is 100 sccm, 120 sccm, 150 sccm, 180 sccm, 200 sccm, 220 sccm, 250 sccm, 280 sccm, 300 sccm, 320 sccm, 350 sccm, 380 sccm, or 400 sccm; and a typical but non-limiting oxygen flow rate is 100 sccm, 120 sccm, 150 sccm, 180 sccm, 200 sccm, 220 sccm, 250 sccm, 280 sccm, or 300 sccm.

[0068] When magnetron sputtering is used to prepare film layers, the process parameters used in magnetron sputtering directly affect the performance of the film layers.

[0069] As an optional embodiment of the present invention, after ICP cleaning, an air pumping time of 100-500s is set before the target starts coating.

[0070] Air pumping can release the attached impurity gas from the non-metallic substrate into the machine cavity along with the vacuum pump group, which can improve the product resistance and film adhesion to a certain extent.

[0071] As an optional embodiment of the present invention, when depositing the Cr film layer, a Cr target is used as a sputtering source, argon is used as a working gas, the argon flow rate is 50-250 sccm, the sputtering power is 7-12 kW, and the deposition time is 1000-3000 s.

[0072] Typical but non-limiting argon gas flow rates are 50 sccm, 60 sccm, 80 sccm, 100 sccm, 120 sccm, 140 sccm, 150 sccm, 160 sccm, 180 sccm, 200 sccm, 220 sccm, 240 sccm, or 250 sccm. Typical but non-limiting sputtering powers are 7 kW, 8 kW, 9 kW, 10 kW, 11 kW, or 12 kW. Typical but non-limiting deposition times are 1000 s, 1500 s, 2000 s, 2500 s, or 3000 s.

[0073] As an optional embodiment of the present invention, when depositing the Cr film, the input power of the ICP is 1.0-3.0 kW, and the flow rate of the argon gas is 100-400 sccm.

[0074] Typical but non-limiting input powers for the ICP are 1.0 kW, 1.5 kW, 2.0 kW, 2.5 kW, or 3.0 kW; typical but non-limiting flow rates for argon are 100 sccm, 120 sccm, 150 sccm, 180 sccm, 200 sccm, 220 sccm, 250 sccm, 280 sccm, 300 sccm, 320 sccm, 350 sccm, 380 sccm, or 400 sccm.

[0075] As a preferred embodiment of the present invention, when sputtering Cr components, the target power is set to 7-12 kW, and argon is filled into the upper, middle and lower ends of the target with a flow rate of 50-250 sccm. The Si target and the C target are also filled into the upper, middle and lower ends with argon with a flow rate of 50-250 sccm to balance the gas pressure and protect the target. At the same time, ICP assisted film formation is turned on and argon is filled into the ICP with a flow rate of 100-400 sccm to improve the film quality.

[0076] As a preferred embodiment of the present invention, CrSi is deposited x C y For the N film layer, Cr target, Si target and C target are used as sputtering sources, nitrogen is used as reaction gas, argon is used as working gas, the flow rate of nitrogen is 150-350sccm, the flow rate of argon is 50-250sccm, the sputtering power of Cr target is 7-12kW, the sputtering power of Si target is 7-12kW, the sputtering power of C target is 5-10kW, and the deposition time is 1000-3000s.

[0077] Typical but non-limiting flow rates of argon are 50 sccm, 60 sccm, 80 sccm, 100 sccm, 120 sccm, 140 sccm, 150 sccm, 160 sccm, 180 sccm, 200 sccm, 220 sccm, 240 sccm, or 250 sccm. Typical but non-limiting flow rates of nitrogen are 150 sccm, 180 sccm, 200 sccm, 220 sccm, 250 sccm, 280 sccm, 300 sccm, 320 sccm, 340 sccm, or 350 sccm.

[0078] Typical but non-limiting sputtering powers for Cr and Si targets are 7 kW, 8 kW, 9 kW, 10 kW, 11 kW, or 12 kW. Typical but non-limiting sputtering powers for C targets are 5 kW, 6 kW, 7 kW, 8 kW, 9 kW, or 10 kW. Typical but non-limiting deposition times are 1000 s, 1500 s, 2000 s, 2500 s, or 3000 s.

[0079] As a preferred embodiment of the present invention, CrSi is deposited x C y For the N film layer, the ICP input power of the Cr target, Si target and C target is 1.0-3.0kW, and the flow rate of argon gas is 150-350sccm.

[0080] Typical but non-limiting input powers for the ICP are 1.0 kW, 1.5 kW, 2.0 kW, 2.5 kW, or 3.0 kW; typical but non-limiting flow rates for argon are 150 sccm, 180 sccm, 200 sccm, 220 sccm, 250 sccm, 280 sccm, 300 sccm, 320 sccm, or 350 sccm.

[0081] By Cr film and CrSi x C y Further definition of process parameters during N film deposition enables precise control of CrSi x C y The content of each element in the N film layer can achieve the goal of reducing the film thickness while meeting the corresponding requirements of hardness and friction resistance of this film layer.

[0082] According to a third aspect of the present invention, there is also provided an electronic product cover, comprising a non-metallic substrate and a conductive film disposed on the surface of the non-metallic substrate or a conductive film obtained by the above-mentioned preparation method.

[0083] In view of the advantages of the conductive film, the electronic product cover has the same advantages, and the electronic product cover made of a non-metallic substrate has an excellent charging function.

[0084] There are many types of electronic product covers, such as smart watch covers or other smart wearable device covers.

[0085] According to a fourth aspect of the present invention, there is further provided an electronic product comprising the above-mentioned electronic product cover.

[0086] In view of the advantages of the above-mentioned electronic product cover, the electronic product containing the same also has the same advantages.

[0087] There are many types of electronic products, including but not limited to smart watches or other smart wearable devices.

[0088] The present invention is described in detail below with reference to specific embodiments and comparative examples.

[0089] Example 1

[0090] This embodiment provides a conductive film comprising a Cr film layer disposed on a surface of a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0091] The thickness of the Cr film is 0.4 μm, and the CrSi x C y The thickness of the N film layer is 1.0 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:2.5, and the non-metallic substrate is a glass substrate;

[0092] CrSi x C y In the N film layer, x is 1.0 and y is 0.8.

[0093] The method for preparing the conductive film provided in this embodiment includes the following steps:

[0094] (1) Select Guangchi 1650 sputtering coating machine for debugging;

[0095] (2) The drum speed in the coating chamber is 80 rpm;

[0096] (3) The initial vacuum degree of the coating is 8.0*10^-4Pa;

[0097] (4) After ICP is started, ICP cleaning is performed. Argon gas is filled into the upper, middle, and lower ends of the Cr, Si, and C targets at 145 / 165 / 175 sccm. The ICP power is set to 1 kW, argon gas is filled into 150 sccm, and oxygen gas is filled into 240 sccm.

[0098] (5) After ICP cleaning, set an empty layer with a timer of 480 seconds before starting the coating of the target;

[0099] (6) When depositing the Cr film, the deposition (coating) time was set to 2100 s, the Cr target power was 10 kW, argon was filled into the upper, middle, and lower ends of the target at 145 / 165 / 175 sccm, and argon was filled into the upper, middle, and lower ends of the Si target and the C target at 145 / 165 / 175 sccm. At the same time, ICP assisted film formation was turned on and 150 sccm of argon was filled into the ICP to deposit the Cr film on the surface of the non-metallic substrate;

[0100] (7) In the deposition of CrSi x C y When the N film layer is formed, the deposition (coating) time is set to 2100s, the Cr target power is 10kW, the Si target power is 10kW, and the C target power is 8kW. The Cr target, Si target, and C target sputtering coating are started at the same time. Argon gas of 145 / 165 / 175sccm is filled into the upper, middle, and lower ends of the target. At the same time, ICP auxiliary film formation is turned on. ICP is filled with 150sccm argon and 280sccm nitrogen for full reaction to deposit CrSi on the Cr film surface of the non-metallic substrate. x C y N film layer to obtain a conductive thin film.

[0101] Example 2

[0102] This embodiment provides a conductive film comprising a Cr film layer disposed on a surface of a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0103] The thickness of the Cr film is 0.4 μm, and the CrSi x C y The thickness of the N film layer is 0.9 μm, and the Cr film layer is x C y The thickness ratio of the N film layer is 1:2.25, CrSi x C y In the N film layer, x is 1.2 and y is 1.0.

[0104] The method for preparing the conductive film provided in this embodiment includes the following steps, except that in step (7) the CrSi x C y The deposition (coating) time for the N film layer is 1900s, the Si target power is 12kW, the C target power is 10kW, and the remaining steps are the same as in Example 1.

[0105] Example 3

[0106] This embodiment provides a conductive film comprising a Cr film layer disposed on a surface of a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. xC y N film layer composition;

[0107] The thickness of the Cr film is 0.4 μm, and the CrSi x C y The thickness of the N film layer is 1.2 μm, and the Cr film layer is x C y The thickness ratio of the N film layer is 1:3, CrSi x C y In the N film layer, x is 0.8 and y is 0.6.

[0108] The method for preparing the conductive film provided in this embodiment includes the following steps, except that in step (7) the CrSi x C y The deposition (coating) time for the N film layer is 2400s, the Si target power is 8kW, the C target power is 6kW, and the remaining steps are the same as in Example 1.

[0109] Example 4

[0110] This embodiment provides a conductive film comprising a Cr film layer disposed on a surface of a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0111] The thickness of the Cr film is 0.3 μm, and the CrSi x C y The thickness of the N film layer is 0.9 μm, and the Cr film layer is x C y The thickness ratio of the N film layer is 1:3, CrSi x C y In the N film layer, x is 1.1 and y is 0.5.

[0112] The method for preparing the conductive film provided in this embodiment has the following features: except that the deposition (coating) time in step (6) when depositing the Cr film layer is 1600s, and the deposition (coating) time in step (7) when depositing the CrSi film layer is 1600s. x C y The deposition (coating) time for the N film layer is 1900s, the Si target power is 11kW, the C target power is 5kW, and the remaining steps are the same as in Example 1.

[0113] Example 5

[0114] This embodiment provides a conductive film comprising a Cr film layer disposed on a surface of a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0115] The thickness of the Cr film is 0.5 μm, and the CrSi x C y The thickness of the N film layer is 1.25 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:2.5, CrSi x C y In the N film layer, x is 0.9 and y is 0.9.

[0116] The method for preparing the conductive film provided in this embodiment has the following features: except that the deposition (coating) time in step (6) when depositing the Cr film layer is 3000s, and the deposition (coating) time in step (7) when depositing the CrSi film layer is 3000s. x C y The deposition (coating) time for the N film layer is 2600s, the Si target power is 9kW, the C target power is 9kW, and the remaining steps are the same as in Example 1.

[0117] Comparative Example 1

[0118] This comparative example provides a conductive film comprising a Cr film layer disposed on a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0119] The thickness of the Cr film is 0.2 μm, and the CrSi x C y The thickness of the N film layer is 1.0 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:5, CrSi x C y In the N film layer, x is 1.0 and y is 0.8.

[0120] The preparation method of the conductive film provided in this comparative example is as follows, except that the deposition (coating) time of the Cr film layer in step (6) is 800s, and the deposition time of the CrSi film layer in step (7) is 800s. x C y The deposition (coating) time for the N film layer is 2100s, and the remaining steps are the same as in Example 1.

[0121] Comparative Example 2

[0122] This comparative example provides a conductive film comprising a Cr film layer disposed on a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0123] The thickness of the Cr film is 0.4 μm, and the CrSi x C yThe thickness of the N film layer is 1.3 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:3.25, CrSi x C y In the N film layer, x is 1.0 and y is 0.8.

[0124] The preparation method of the conductive film provided in this comparative example is as follows, except that step (7) deposits CrSi x C y The deposition (coating) time for the N film layer is 2800s, and the remaining steps are the same as in Example 1.

[0125] Comparative Example 3

[0126] This comparative example provides a conductive film comprising a Cr film layer disposed on a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0127] The thickness of the Cr film is 0.4 μm, and the CrSi x C y The thickness of the N film layer is 1.0 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:2.5, CrSi x C y In the N film layer, x is 0.7 and y is 1.05.

[0128] The preparation method of the conductive film provided in this comparative example is as follows, except that the deposition (coating) time of the Cr film layer in step (6) is 2100s, and the deposition time of the CrSi film layer in step (7) is 2100s. x C y The deposition (coating) time for the N film layer is 2100s, the Si target power is 7kW, the C target power is 10.5kW, and the remaining steps are the same as in Example 1.

[0129] Comparative Example 4

[0130] This comparative example provides a conductive film comprising a Cr film layer disposed on a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0131] The thickness of the Cr film is 0.6 μm, and the CrSi x C y The thickness of the N film layer is 1.3 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:2.167, CrSix C y In the N film layer, x is 1.0 and y is 0.8.

[0132] The preparation method of the conductive film provided in this comparative example is as follows, except that the deposition (coating) time of the Cr film layer in step (6) is 3200s, and the deposition time of the CrSi film layer in step (7) is 3200s. x C y The deposition (coating) time for the N film layer is 2800s, and the remaining steps are the same as in Example 1.

[0133] Comparative Example 5

[0134] This comparative example provides a conductive film comprising a Cr film layer disposed on a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0135] The thickness of the Cr film is 0.4 μm, and the CrSi x C y The thickness of the N film layer is 1.0 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:2.5, CrSi x C y In the N film layer, x is 0.65 and y is 0.55.

[0136] The preparation method of the conductive film provided in this comparative example is as follows, except that the deposition (coating) time of the Cr film layer in step (6) is 2100s, and the deposition time of the CrSi film layer in step (7) is 2100s. x C y The deposition (coating) time for the N film layer is 2100s, the Si target power is 6.5kW, the C target power is 5.5kW, and the remaining steps are the same as in Example 1.

[0137] Comparative Example 6

[0138] This comparative example provides a conductive film comprising a Cr film layer disposed on a non-metallic substrate and a CrSi film disposed on the surface of the Cr film layer. x C y N film layer composition;

[0139] The thickness of the Cr film is 0.5 μm, and the CrSi x C y The thickness of the N film layer is 1.3 μm, and the Cr film layer and CrSi x C y The thickness ratio of the N film layer is 1:2.6, CrSi x C y In the N film layer, x is 1.25 and y is 0.7.

[0140] The preparation method of the conductive film provided in this comparative example is as follows, except that the deposition (coating) time of the Cr film layer in step (6) is 3000s, and the deposition time of the CrSi film layer in step (7) is 3000s. x C y The deposition (coating) time for the N film layer is 2800s, the Si target power is 12.5kW, the C target power is 7kW, and the remaining steps are the same as in Example 1.

[0141] Comparative Example 7

[0142] This comparative example provides a conductive film, which is composed of a Cr film layer provided on the surface of a non-metallic substrate, a CrN film layer provided on the surface of the Cr film layer, and a CrSiCN film layer provided on the surface of the CrN film layer;

[0143] The thickness of the Cr film layer is 0.2 μm, the thickness of the CrN film layer is 0.2 μm, the thickness of the CrSiCN film layer is 1.0 μm, and the thickness ratio of the Cr film layer to the CrN film layer and the CrSiCN film layer is 2:2:10.

[0144] The method for preparing the conductive film provided in this comparative example comprises the following steps:

[0145] (1) Select Guangchi 1650 sputtering coating machine for debugging;

[0146] (2) The drum speed in the coating chamber is 80 rpm;

[0147] (3) The initial vacuum degree of the coating is 8.0*10^-4Pa;

[0148] (4) After ICP is started, ICP cleaning is performed. Argon gas is filled into the upper, middle, and lower ends of the Cr, Si, and C targets at 145 / 165 / 175 sccm. The ICP power is set to 1 kW, argon gas is filled into the target at 150 sccm, and oxygen gas is filled into the target at 240 sccm.

[0149] (5) After ICP cleaning, set an empty layer with a timer of 480 seconds before starting the coating of the target;

[0150] (6) When depositing the Cr film, the deposition (coating) time was set to 800 s, the Cr target power was 10 kW, argon was filled into the upper, middle, and lower ends of the target at 145 / 165 / 175 sccm, and argon was filled into the upper, middle, and lower ends of the Si target and the C target at 145 / 165 / 175 sccm. At the same time, ICP assisted film formation was turned on and 150 sccm of argon was filled into the ICP to deposit the Cr film on the surface of the non-metallic substrate;

[0151] (7) When depositing the CrN film, the deposition (coating) time was set to 800 s, the target power was 10 kW, and argon gas was filled into the upper, middle, and lower ends of the target at 145 / 165 / 175 sccm. At the same time, ICP assisted film formation was turned on, and the ICP was filled with 150 sccm argon and 280 sccm nitrogen for sufficient reaction to deposit the CrN film on the surface of the Cr film.

[0152] (8) When depositing the CrSiCN film layer, the deposition (coating) time was set to 2100s, the target power was 10kW, and the sputtering coating of the Cr target, Si target, and C target was started at the same time. Argon gas of 145 / 165 / 175sccm was filled into the upper, middle, and lower ends of the target. At the same time, ICP assisted film formation was turned on. The ICP was filled with 150sccm argon and 280sccm nitrogen for sufficient reaction to deposit the CrSiCN film layer on the surface of the CrN film layer to obtain a conductive film.

[0153] Comparative Example 8

[0154] This comparative example provides a conductive film, which is composed of a Cr film layer provided on the surface of a non-metallic substrate, a CrN film layer provided on the surface of the Cr film layer, and a CrSiCN film layer provided on the surface of the CrN film layer;

[0155] The thickness of the Cr film layer is 0.3 μm, the thickness of the CrN film layer is 0.3 μm, the thickness of the CrSiCN film layer is 1.5 μm, and the thickness ratio of the Cr film layer to the CrN film layer and the CrSiCN film layer is 2:2:10.

[0156] The preparation method of the conductive film provided in this comparative example is the same as that of comparative example 7, except that the deposition (coating) time for depositing the Cr film layer in step (6) is 1600 s, the deposition (coating) time for depositing the CrN film layer in step (7) is 1600 s, and the deposition (coating) time for depositing the CrSiCN film layer in step (8) is 3600 s.

[0157] Comparative Example 9

[0158] This comparative example provides a conductive film, which is composed of a Cr film layer provided on the surface of a non-metallic substrate, a CrN film layer provided on the surface of the Cr film layer, and a CrSiCN film layer provided on the surface of the CrN film layer;

[0159] The thickness of the Cr film layer is 0.5 μm, the thickness of the CrN film layer is 0.5 μm, the thickness of the CrSiCN film layer is 2.0 μm, and the thickness ratio of the Cr film layer to the CrN film layer and the CrSiCN film layer is 2:2:8.

[0160] The preparation method of the conductive film provided in this comparative example is the same as that of comparative example 7, except that the deposition (coating) time for depositing the Cr film layer in step (6) is 2800 s, the deposition (coating) time for depositing the CrN film layer in step (7) is 2800 s, and the deposition (coating) time for depositing the CrSiCN film layer in step (8) is 4200 s.

[0161] Comparative Example 10

[0162] This comparative example provides a conductive film, which is composed of a Cr film layer provided on the surface of a non-metallic substrate, a CrN film layer provided on the surface of the Cr film layer, and a CrSiCN film layer provided on the surface of the CrN film layer;

[0163] The thickness of the Cr film layer is 0.4 μm, the thickness of the CrN film layer is 0.4 μm, the thickness of the CrSiCN film layer is 1.0 μm, and the thickness ratio of the Cr film layer to the CrN film layer and the CrSiCN film layer is 2:2:5.

[0164] The preparation method of the conductive film provided in this comparative example is the same as that of comparative example 7, except that the deposition (coating) time for depositing the Cr film layer in step (6) is 2100 s, the deposition (coating) time for depositing the CrN film layer in step (7) is 2100 s, and the deposition (coating) time for depositing the CrSiCN film layer in step (8) is 2100 s.

[0165] Comparative Example 11

[0166] This comparative example provides a conductive film, which is composed of a Cr film layer provided on the surface of a non-metallic substrate and a CrN film layer provided on the surface of the Cr film layer;

[0167] The thickness of the Cr film layer is 0.4 μm, the thickness of the CrN film layer is 1.0 μm, and the thickness ratio of the Cr film layer to the CrN film layer and the CrN film layer is 1:2.5.

[0168] The method for preparing the conductive film provided in this comparative example comprises the following steps:

[0169] Steps (1) to (6) are the same as in Example 1;

[0170] (7) When depositing the CrN film layer, the deposition (coating) time is set to 2100s, the target power is 10kW for the Cr target, and 145 / 165 / 175sccm of argon is filled into the upper, middle and lower ends of the target. At the same time, the ICP assisted film formation is turned on, and the ICP is filled with 150sccm of argon and 280sccm of nitrogen for full reaction to deposit the CrN film layer on the surface of the Cr film layer to obtain a conductive film.

[0171] In order to verify the technical effects of the above embodiments and comparative examples, the following experiments were conducted.

[0172] Experimental Example 1

[0173] The resistance, film thickness, friction, hardness, color and other indicators of the conductive films provided in the embodiments and comparative examples were tested.

[0174] The resistance of the conductive film is primarily measured by measuring the resistance of a single-sided connection between the conductive film on the front side of the non-metallic substrate and the Cr film on the back side of the non-metallic substrate. A single-sided connection resistance of less than 1 kΩ satisfies the requirements. The Cr film on the back side of the non-metallic substrate has a thickness of 1.2 μm and is prepared using the same method as described in the present invention for preparing the Cr film in the conductive film.

[0175] Due to the special shape of the actual product (non-metallic substrate), it is not easy to test the film thickness and friction effect. Therefore, it is considered to use the same material plating sheet for plating and use the plating sheet for testing. Figure 1 That is, before coating, the non-metallic substrate and the accompanying coating sheet of the same material are fixed on the hanging plate, and the hanging plate is moved into the coating chamber of the equipment for coating.

[0176] The color of the conductive film was visually observed and the brightness was measured using a CM-700 spectrophotometer, the resistance was measured using an ohmmeter, the film thickness of the accompanying plating sheet was measured using a VK-100 instrument, the hardness was tested using a pencil hardness tester, and the friction was measured using a linear friction machine. The specific results are shown in Tables 1 and 2.

[0177] It should be noted that in actual production, the performance of qualified conductive films that meet customer requirements is as follows: the single-sided resistance of the front and back sides is required to be less than 1kΩ, the film thickness range is required to be 1.5±0.3μm, the hardness is ≥ pencil 9H, and the film layer is not damaged after 5000 times of steel wool friction.

[0178] Table 1

[0179]

[0180] Table 2

[0181]

[0182]

[0183] It can be seen from the data in Tables 1 and 2 that the various performances of the conductive film provided by the present invention can meet customer requirements only when it is in a specific film layer material composition and thickness distribution relationship. When the film layer material composition or thickness distribution relationship is not within the scope of the present invention, the conductive film cannot meet all the required indicators at the same time.

[0184] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A conductive film, characterized in that: A Cr film layer provided on the surface of a non-metallic substrate and a CrSi film provided on the surface of the Cr film layer x C y N film layer composition; The thickness of the Cr film layer is 0.3-0.5 μm, and the CrSi x C y The thickness of the N film layer is 0.8-1.3 μm, and the Cr film layer and the CrSi x C y The thickness ratio of the N film layer is 1:(2.25-3.00); The CrSi x C y In the N film layer, x is 0.8-1.2 and y is 0.5-1.

0.

2. The conductive film according to claim 1, wherein The Cr film layer and the CrSi x C y The thickness ratio of the N film layer is 1:(2.30-2.80).

3. The conductive film according to claim 1, wherein The thickness of the Cr film layer is 0.35-0.45 μm, and the CrSi x C y The thickness of the N film layer is 0.9-1.2 μm.

4. The conductive film according to claim 1, wherein The CrSi x C y In the N film layer, x is 0.9-1.1 and y is 0.6-0.

9.

5. The conductive film according to claim 1, wherein The non-metallic substrate includes any one of a ceramic substrate, a sapphire substrate or a glass substrate.

6. The conductive film according to claim 1, wherein The Cr film layer and the CrSi x C y The thickness ratio of the N film layer is 1:2.

50.

7. The conductive film according to claim 1, wherein The thickness of the Cr film layer is 0.4 μm, and the CrSi x C y The thickness of the N film layer is 1.0 μm.

8. The conductive film according to claim 1, wherein The CrSi x C y In the N film layer, x is 1.0 and y is 0.

8.

9. The method for preparing a conductive film according to any one of claims 1 to 8, characterized in that: The following steps are involved: Provide non-metallic substrates; Depositing a Cr film layer on the surface of the non-metallic substrate by an ICP-assisted magnetron sputtering method; CrSi is deposited on the surface of the Cr film layer of the non-metallic substrate by using an ICP-assisted magnetron sputtering method. x C y N film layer to obtain a conductive thin film.

10. The method for preparing a conductive film according to claim 9, wherein: When depositing the Cr film, a Cr target is used as a sputtering source, argon is used as a working gas, the argon flow rate is 50-250 sccm, the sputtering power is 7-12 kW, the deposition time is 1000-3000 s, and the ICP input power is 1.0-3.0 kW.

11. The method for preparing a conductive film according to claim 9, wherein: Deposition of CrSi x C y For the N film layer, Cr target, Si target and C target are used as sputtering sources, nitrogen is used as reaction gas, argon is used as working gas, the flow rate of nitrogen is 150-350sccm, the flow rate of argon is 50-250sccm, the sputtering power of Cr target is 7-12kW, the sputtering power of Si target is 7-12kW, the sputtering power of C target is 5-10kW, and the deposition time is 1000-3000s.

12. The method for preparing a conductive film according to claim 11, wherein: Deposition of CrSi x C y For the N film layer, the ICP input power of the Cr target, Si target and C target is 1.0-3.0kW, and the flow rate of argon gas is 150-350sccm.

13. The method for preparing a conductive film according to any one of claims 9 to 12, wherein: Before magnetron sputtering, the method also includes the step of vacuum exhausting the coating chamber of the magnetron sputtering machine used.

14. The method for preparing a conductive film according to any one of claims 9 to 12, wherein: Before magnetron sputtering, the steps of cleaning the ICP and the non-metallic substrate are also included.

15. A cover for an electronic product, characterized in that: The present invention comprises a non-metallic substrate and a conductive film according to any one of claims 1 to 8 or a conductive film prepared by the preparation method according to any one of claims 9 to 14, which is arranged on the surface of the non-metallic substrate.

16. An electronic product, characterized in that: The electronic product cover according to claim 15 is included.

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