Nor Flash, word line voltage abnormality detection method and control device

Abstract

The invention discloses a Nor Flash, comprising: a storage cell array; a voltage source to be detected; a word line voltage anomaly detection array, comprising a plurality of word line voltage anomaly detection circuits, the word line voltage anomaly detection circuits being connected to the word lines to be detected in a one-to-one correspondence, the word line voltage anomaly detection circuits comprising a test switch, a test unit and a comparison circuit, the gate of the test unit being connected to a corresponding word line to be detected through the test switch, the drain of the test unit being connected to the comparison circuit, when the test switch is turned on, the comparison circuit outputs a level signal representing a comparison result according to a current output by the drain of the test unit and a reference threshold current, and since the embodiment of the invention uses a built-in word line voltage anomaly detection array to replace a traditional external probe to perform voltage anomaly detection on a selected word line, convenience can be provided for the entire word line voltage anomaly detection and the time spent on detection can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a Nor Flash, a word line voltage abnormality detection method, a control device and a computer storage medium. Background Art

[0002] Nor Flash is used to store non-volatile data, which usually includes word lines that connect the storage cells in parallel and bit lines that connect the storage cells in series. Nor Flash usually completes the data reading and rewriting functions through three basic functions: reading data, writing data, and erasing data. In the process of writing data and erasing data, a high voltage needs to be added to the word line. If the voltage on the word line is abnormal, that is, the high voltage is not added correctly, the data writing and erasing functions cannot be completed, and Nor Flash cannot work normally. Therefore, it is very necessary to detect abnormalities in the word line voltage.

[0003] The traditional Nor Flash word line voltage anomaly detection method usually requires cutting the plastic protective layer outside the Nor Flash so that the word line inside the Nor Flash can be connected to an external probe, and then the voltage obtained by adding the driving voltage of the voltage source to be detected to the word line is compared with the preset voltage threshold to determine whether the voltage on the measured word line is abnormal. However, this method requires manual operation, and each detection requires cutting the plastic protective layer and connecting the word line inside the NorFlash to the external probe before the detection. The entire detection is very inconvenient and takes a lot of time. Summary of the invention

[0004] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0005] The embodiments of the present invention provide a Nor Flash, a word line voltage anomaly detection method, a control device and a computer storage medium, which can facilitate the entire word line voltage anomaly detection and reduce the time spent on the entire word line voltage anomaly detection.

[0006] In a first aspect, an embodiment of the present invention provides a Nor Flash, including:

[0007] A memory cell array, comprising a plurality of memory cells, wherein the memory cells in the same row of the memory cell array are connected to the same word line;

[0008] A voltage source to be detected, used for providing a driving voltage to a word line to be detected;

[0009] A word line voltage anomaly detection array comprises a plurality of word line voltage anomaly detection circuits, wherein the word line voltage anomaly detection circuits are connected to the word lines to be detected in a one-to-one correspondence, and the word line voltage anomaly detection circuits comprise a test switch, a test unit and a comparison circuit, wherein a gate of the test unit is connected to a corresponding word line to be detected through the test switch, a source of the test unit is grounded, and a drain of the test unit is connected to the comparison circuit, and when the test switch is turned on, the comparison circuit outputs a level signal representing a comparison result according to a current output by the drain of the test unit and a reference threshold current.

[0010] In a second aspect, an embodiment of the present invention provides a method for detecting abnormal word line voltage of a Nor Flash, wherein the Nor Flash comprises:

[0011] A memory cell array, comprising a plurality of memory cells, wherein the memory cells in the same row of the memory cell array are connected to the same word line;

[0012] A voltage source to be detected, used for providing a driving voltage to a word line to be detected;

[0013] A word line voltage anomaly detection array, comprising a plurality of word line voltage anomaly detection circuits, wherein the word line voltage anomaly detection circuits are connected to the word lines to be detected in a one-to-one correspondence, and the word line voltage anomaly detection circuits comprise a test switch, a test unit and a comparison circuit, wherein the gate of the test unit is connected to a corresponding word line to be detected through the test switch, the source of the test unit is grounded, the drain of the test unit is connected to the comparison circuit, and when the test switch is turned on, the comparison circuit outputs a level signal representing a comparison result according to a current output by the drain of the test unit and a reference threshold current;

[0014] The word line voltage abnormality detection method comprises:

[0015] receiving a detection signal, and determining the word line to be detected according to the detection signal;

[0016] Selecting the voltage source to be detected and adjusting the threshold voltage of the test unit according to a preset detection voltage value;

[0017] determining the reference threshold current according to the threshold voltage;

[0018] Controlling the voltage source to be detected to be connected to the word line to be detected, and controlling the test switch corresponding to the word line to be detected to be turned on;

[0019] The level signal output by the comparison circuit is received, and a detection result of the to-be-detected word line is determined according to the level signal.

[0020] In a third aspect, an embodiment of the present invention further provides a control device for word line voltage anomaly detection, comprising at least one processor and a memory for communicating with the at least one processor; the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the word line voltage anomaly detection method as described in the second aspect above.

[0021] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer-executable instructions, and the computer-executable instructions are used to enable a computer to execute the word line voltage abnormality detection method as described in the second aspect above.

[0022] The embodiments of the present invention have at least the following beneficial effects:

[0023] The Nor Flash of the embodiment of the present invention has a word line voltage anomaly detection array disposed therein, and the word line voltage anomaly detection array includes a plurality of word line voltage anomaly detection circuits, each of which is connected one by one to each word line to be detected. The word line voltage anomaly detection circuit includes a test switch, a test unit and a comparison circuit. The gate of the test unit is connected to a corresponding word line to be detected through the test switch, the source of the test unit is grounded, and the drain of the test unit is connected to the comparison circuit. When the test switch is turned on, the voltage on the word line to be detected is added to the gate of the test unit, and the comparison circuit is used to output a level signal representing the comparison result according to the comparison between the current output by the drain of the test unit and the preset reference threshold current. According to the level signal, it can be judged whether the voltage on the word line to be detected is abnormal. Therefore, the embodiment of the present invention can detect whether the voltage on the word line to be detected is abnormal by replacing the traditional external probe with the internally arranged word line voltage anomaly detection array. Because the word line voltage anomaly detection array is built-in, it is not necessary to cut the plastic protective layer before detection and connect the word line inside the Nor Flash with the external probe. Therefore, compared with the prior art, the embodiment of the present invention can provide convenience for the word line voltage anomaly detection of the Nor Flash and reduce the time spent on the word line voltage anomaly detection of the Nor Flash.

[0024] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The accompanying drawings are used to provide a further understanding of the technical solution of the present invention and constitute a part of the specification. Together with the examples of the present invention, they are used to explain the technical solution of the present invention and do not constitute a limitation on the technical solution of the present invention.

[0026] Figure 1 is a schematic diagram of the structure of the Nor Flash provided by an embodiment of the present invention;

[0027] Figure 2 It is an overall flow chart of a method for detecting abnormal word line voltage of Nor Flash provided by an embodiment of the present invention;

[0028] Figure 3 is a detailed flow chart of step S100 provided in one embodiment of the present invention;

[0029] Figure 4 is a detailed flow chart of step S200 provided in one embodiment of the present invention;

[0030] Figure 5 is a detailed flow chart of step S300 provided in one embodiment of the present invention;

[0031] Figure 6 is a detailed flow chart of step S500 provided in one embodiment of the present invention;

[0032] Figure 7 It is a structural schematic diagram of a control device for detecting abnormal word line voltage provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0033] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0034] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0035] In the description of the present invention, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood as not including the number itself, and "above", "below", "within" etc. are understood as including the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0036] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0037] Nor Flash is used to store non-volatile data, which usually includes a word line that connects the storage cells in parallel and a bit line that connects the storage cells in series. Nor Flash usually completes the data reading and rewriting functions through three basic functions: reading data, writing data, and erasing data. In the process of writing data and erasing data, a high voltage needs to be added to the word line. If the voltage on the word line is abnormal, that is, the high voltage is not added correctly, the data writing and erasing functions cannot be completed, and Nor Flash cannot work normally. Therefore, it is very necessary to detect the abnormality of the word line voltage. Here, it can be understood that the reason for the abnormal voltage on the word line may be that the word line has leakage due to process reasons, resulting in a decrease in the voltage on the word line due to leakage; it may also be that there is an abnormality in the voltage source to be detected itself, such as the driving voltage provided by the voltage source to be detected is low or the output is unstable, resulting in a low voltage after the driving voltage is added to the word line.

[0038] The traditional Nor Flash word line voltage anomaly detection method usually requires cutting the plastic protective layer outside the Nor Flash so that the word line inside the Nor Flash is connected to an external probe, and then the word line voltage obtained by adding the driving voltage of the voltage source to be detected to the word line is compared with a preset voltage threshold to determine whether the voltage on the measured word line is abnormal. However, this method requires manual operation, and each detection requires cutting the plastic protective layer and connecting the word line inside the Nor Flash to the external probe before the detection, which makes the entire Nor Flash word line voltage anomaly detection very inconvenient and time-consuming.

[0039] Based on this, an embodiment of the present invention provides a Nor Flash, including:

[0040] A memory cell array includes a plurality of memory cells, wherein memory cells in the same row of the memory cell array are connected to the same word line;

[0041] A voltage source to be detected, used for providing a driving voltage to a word line to be detected;

[0042] A word line voltage anomaly detection array includes a plurality of word line voltage anomaly detection circuits, each of which is connected to a word line to be detected in a one-to-one correspondence. The word line voltage anomaly detection circuit includes a test switch, a test unit, and a comparison circuit. The gate of the test unit is connected to a corresponding word line to be detected through the test switch, the source of the test unit is grounded, and the drain of the test unit is connected to the comparison circuit. When the test switch is turned on, the comparison circuit outputs a level signal representing a comparison result based on a current output by the drain of the test unit and a reference threshold current.

[0043] It is understandable that the entire operation process of the traditional Nor Flash word line voltage abnormality detection method is very inconvenient and takes a lot of time. The reason why the traditional Nor Flash word line voltage abnormality detection method has the above-mentioned defects is largely due to the defects in the existing Nor Flash structure. The existing Nor Flash structure does not include a built-in module or structure for testing whether the voltage on the word line is abnormal, resulting in the existing Nor Flash word line voltage abnormality detection method relying on external probes to be implemented. Therefore, it can be imagined that the word line voltage anomaly detection circuit in the word line voltage anomaly detection array set inside the Nor Flash of the embodiment of the present invention is connected to the word line to be detected in a one-to-one correspondence, and the word line voltage anomaly detection circuit includes a test switch, a test unit and a comparison circuit. When the test switch is turned on, the voltage on the word line to be detected is added to the gate of the test unit, and the comparison circuit outputs the detection result of the word line to be detected according to the comparison of the current output by the drain of the test unit with the preset reference threshold current. Therefore, the Nor Flash of the embodiment of the present invention adds the voltage on the word line to be detected to the gate of the test unit, and then compares the drain current generated by the test unit with the preset reference threshold current through the comparison circuit to output a level signal representing the comparison result, and the detection result of whether the voltage on the word line to be detected is abnormal can be obtained according to the level signal. Therefore, the embodiment of the present invention does not need to cut the plastic protective layer before detection and connect the word line inside the Nor Flash to the external probe. Therefore, compared with the prior art, the embodiment of the present invention can provide convenience for the word line voltage anomaly detection of the Nor Flash and reduce the time spent on the word line voltage anomaly detection of the Nor Flash.

[0044] It is conceivable that, referring to Figure 1 The Nor Flash of the embodiment of the present invention may further include a bit line, and the storage unit is arranged at the intersection of the word line and the bit line.

[0045] It can be imagined that the test unit of the Nor Flash of the embodiment of the present invention can be the same as the storage unit, and the comparison circuit can be a current-type comparator. Therefore, those skilled in the art can understand that the circuit area cost of the word line voltage abnormality detection circuit of the embodiment of the present invention is small, and therefore, the circuit area cost of the word line voltage abnormality detection array of the embodiment of the present invention is also small.

[0046] Further, in one embodiment of the present invention, the comparator circuit may be a current type comparator, including a first input terminal, a second input terminal and an output terminal, the first input terminal is connected to the drain of the test unit to receive the drain current of the test unit, and the second input terminal is connected to the reference threshold current generating circuit, and it is worth noting that the reference threshold current generating circuit can generate current according to a preset reference threshold current. It can be understood that in one embodiment of the present invention, the comparison circuit is also used to output a low level signal when the current output by the drain of the test unit is less than the preset reference threshold current, that is, the voltage on the to-be-detected word line corresponding to the test unit is abnormal; the comparison circuit is also used to output a high level signal when the current output by the drain of the test unit is greater than or equal to the preset reference threshold current, indicating that the voltage on the to-be-detected word line corresponding to the test unit is not abnormal.

[0047] Reference Figure 2 The embodiment of the present invention further provides a method for detecting abnormal word line voltage of a Nor Flash, the Nor Flash comprising:

[0048] A memory cell array includes a plurality of memory cells, wherein memory cells in the same row of the memory cell array are connected to the same word line;

[0049] A voltage source to be detected, used for providing a driving voltage to a word line to be detected;

[0050] A word line voltage anomaly detection array, comprising a plurality of word line voltage anomaly detection circuits, each of which is connected to a word line to be detected in a one-to-one correspondence, and the word line voltage anomaly detection circuit comprises a test switch, a test unit and a comparison circuit, wherein a gate of the test unit is connected to a corresponding word line to be detected through the test switch, a source of the test unit is grounded, and a drain of the test unit is connected to the comparison circuit, and when the test switch is turned on, the comparison circuit outputs a level signal representing a comparison result according to a current output by the drain of the test unit and a reference threshold current;

[0051] The word line voltage abnormality detection method comprises:

[0052] Step S100, receiving a detection signal, and determining a word line to be detected according to the detection signal;

[0053] Step S200, selecting a voltage source to be detected and adjusting a threshold voltage of a test unit according to a preset detection voltage value;

[0054] Step S300, determining a reference threshold current according to the threshold voltage;

[0055] Step S400, controlling the voltage source to be detected to be connected to the word line to be detected, and controlling the test switch corresponding to the word line to be detected to be turned on;

[0056] Step S500, receiving a level signal output by a comparison circuit, and determining a detection result of a word line to be detected according to the level signal.

[0057] It can be understood that, based on the Nor Flash with a built-in word line voltage anomaly detection array, the word line voltage anomaly detection method provided in the embodiment of the present invention first executes step S100 to receive a detection signal, selects a word line to be detected according to the detection signal, and then executes step S200 to select a voltage source to be detected and adjust the threshold voltage of the test unit according to a preset detection voltage value, and then executes step S300 to determine a reference threshold current according to the threshold voltage. Next, execute step S400 to control the voltage source to be detected to be connected to the word line to be detected, and control the test switch corresponding to the word line to be detected to be turned on. Through step S400, the voltage on the word line to be detected can be added to the gate of the corresponding test unit. The last step is to receive the level signal output by the comparison circuit, and determine the detection result of the word line to be detected according to the level signal, that is, execute step S500.

[0058] It can be imagined that the word line voltage anomaly detection method of the Nor Flash in the embodiment of the present invention is based on the fact that a word line voltage anomaly detection array is set inside the applied NorFlash. Compared with the existing word line voltage anomaly detection method, the word line voltage anomaly detection method of the embodiment of the present invention eliminates the steps of cutting the plastic protective layer of the selected word line to be detected and connecting the selected word line to be detected with an external probe. Therefore, compared with the existing word line voltage anomaly detection method, the word line voltage anomaly detection method in the embodiment of the present invention has the advantages of providing convenience for the entire word line voltage anomaly detection method and reducing the overall detection time of the entire word line voltage anomaly detection method.

[0059] It is conceivable that, referring to Figure 3 Step S100 includes but is not limited to the following steps:

[0060] Step S110, receiving a detection signal;

[0061] Step S120, reading word line address information in the detection signal;

[0062] Step S130 , determining a word line to be detected according to the word line address information.

[0063] First, a detection signal is received, and then the word line address information in the detection signal is read. It can be understood here that the word line address information includes the word line address corresponding to the selected word line, wherein the word line address corresponds to the word line one-to-one. Finally, the word line to be detected is selected according to the word line address in the word line address information, that is, according to the word line address in the word line address information, the word line to be detected corresponding to the word line address in the word line address information is selected.

[0064] It can be understood that the word line address information may include one or more word line addresses, and the word line address information may be continuous or discontinuous. Note that the continuity mentioned here may be understood by those skilled in the art as physical continuity or logical continuity.

[0065] It is conceivable that, referring to Figure 4 , step S200 can be refined into the following steps:

[0066] Step S210, reading a preset first reference table;

[0067] Step S220, obtaining, according to the preset detection voltage value, a first voltage value of the voltage source to be detected and a second voltage value of the threshold voltage of the test unit in a first reference table respectively corresponding to the detection voltage value;

[0068] Step S230 , selecting a voltage source to be detected according to the first voltage value and adjusting a threshold voltage of the test unit according to the second voltage value.

[0069] Further, it can be understood that the first reference table preset in step S210 is a table storing the correspondence between the detection voltage, the voltage of the voltage source to be detected, and the threshold voltage of the test unit. It is also conceivable that the reference threshold current in step S300 can also be obtained by querying the preset corresponding relationship table of the stored threshold voltage and the reference threshold current according to the second voltage value determined in step S220. Figure 5 Step S300 may include but is not limited to the following steps:

[0070] Step S310, reading a preset second reference table;

[0071] Step S320: derive a reference threshold current corresponding to the second voltage value in a second reference table according to the second voltage value.

[0072] The second reference table in step S310 is a table storing the corresponding relationship between the threshold voltage and the reference threshold current.

[0073] Furthermore, those skilled in the art will appreciate that, in one embodiment of the present invention, when the voltage source to be detected is controlled to be connected to the word line to be detected in step S400, the test switch corresponding to the word line to be detected may be immediately controlled to be turned on, or the test switch corresponding to the word line to be detected may be controlled to be turned on after a preset charging time.

[0074] It is conceivable that, referring to Figure 6 In one embodiment of the present invention, step S500 can be refined into the following steps:

[0075] Step S510, receiving a level signal output by a comparison circuit;

[0076] Step S520: When the level signal is a high level signal, it is determined that there is no abnormality in the voltage on the word line to be detected.

[0077] When the level signal is a low level signal, it is determined that there is an abnormality in the voltage on the word line to be detected.

[0078] Determine whether the voltage of the word line to be detected is abnormal, that is, execute step S500. When executing step S500, you can first receive the level signal output by the comparison circuit, that is, execute step S510, and then execute step S520: when the level signal output by the comparison circuit is a low-level signal, it means that the current output by the drain of the test unit is less than the reference threshold current, that is, the voltage on the word line to be detected is less than the threshold voltage, so it is determined that there is an abnormality in the voltage on the word line to be detected; and when the level signal output by the comparison circuit is a high-level signal, it means that the current output by the drain of the test unit is greater than or equal to the reference threshold current, that is, the voltage on the word line to be detected is greater than or equal to the threshold voltage, so it is determined that there is no abnormality in the voltage on the word line to be detected.

[0079] Here, it is worth noting that if it is determined in step S520 that there is an abnormality in the voltage on the word line to be detected, the cause of the abnormality may be that the word line to be detected has leakage due to various process reasons, or it may be that the output of the voltage source to be detected selected in step S200 is unstable or the output is reduced. A technician in this field can confirm the cause of the abnormality through other technical means commonly used in the field after executing step S520 to determine that the selected word line to be detected has an abnormality. Since the main purpose of the word line voltage abnormality detection method of the Nor Flash in the embodiment of the present invention is to confirm whether there is an abnormality in the voltage on the selected word line, it will not be elaborated on.

[0080] An embodiment of the present invention also provides a control device for word line voltage anomaly detection, comprising at least one processor and a memory for communicating with the at least one processor; the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the aforementioned word line voltage anomaly detection method.

[0081] Reference Figure 7 , taking the control processor 1001 and the memory 1002 in the control device 1000 for word line voltage anomaly detection as an example that can be connected through a bus. The memory 1002, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs and non-transitory computer executable programs. In addition, the memory 1002 may include a high-speed random access memory, and may also include a non-transitory memory, such as at least one disk memory, a flash memory device, or other non-transitory solid-state storage device. In some embodiments, the memory 1002 may optionally include a memory remotely arranged relative to the control processor 1001, and these remote memories may be connected to the control device 1000 for word line voltage anomaly detection via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0082] Those skilled in the art will understand that Figure 7 The device structure shown in the figure does not constitute a limitation on the control device 1000 for detecting abnormal word line voltage, and may include more or less components than those shown in the figure, or combine certain components, or arrange the components differently.

[0083] The embodiment of the present invention further provides a computer-readable storage medium, which stores computer-executable instructions, and the computer-executable instructions are executed by one or more control processors, for example, Figure 7 The execution of one of the control processors 1001 in the embodiment may enable the one or more control processors to execute the word line voltage abnormality detection method in the above method embodiment, for example, to execute the above described Figure 2 Steps S100 to S500 of the method, Figure 3 Steps S110 to S130 of the method, Figure 4 Steps S210 to S230 of the method, Figure 5 Steps S310 to S320 of the method and Figure 6 Steps S510 to S520 in .

[0084] The device embodiments described above are merely illustrative, and the units described as separate components may or may not be physically separated, that is, they may be located in one place or distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0085] It will be appreciated by those skilled in the art that all or some of the steps and systems in the disclosed method above may be implemented as software, firmware, hardware and appropriate combinations thereof. Some physical components or all physical components may be implemented as software executed by a processor, such as a central processing unit, a digital signal processor or a microprocessor, or may be implemented as hardware, or may be implemented as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on a computer-readable medium, which may include a computer storage medium (or a non-transitory medium) and a communication medium (or a temporary medium). As known to those skilled in the art, the term computer storage medium includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules or other data). Computer storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tapes, disk storage or other magnetic storage devices, or any other medium that may be used to store desired information and may be accessed by a computer. Furthermore, it is well known to those skilled in the art that communication media typically embodies computer readable instructions, data structures, program modules, or other data in a modulated data signal such as a carrier wave or other transport mechanism, and may include any information delivery media.

[0086] The above is a specific description of the preferred implementation of the present application, but the present application is not limited to the above-mentioned implementation mode. Technical personnel familiar with the field can also make various equivalent deformations or substitutions without violating the spirit of the present application. These equivalent deformations or substitutions are all included in the scope defined by the claims of the present application.

Claims

1. A Nor Flash, characterized in that: The Nor Flash includes: A memory cell array, comprising a plurality of memory cells, wherein the memory cells in the same row of the memory cell array are connected to the same word line; A voltage source to be detected, used for providing a driving voltage to a word line to be detected; A word line voltage anomaly detection array comprises a plurality of word line voltage anomaly detection circuits, wherein the word line voltage anomaly detection circuits are connected to the word lines to be detected in a one-to-one correspondence, and the word line voltage anomaly detection circuits comprise a test switch, a test unit and a comparison circuit, wherein a gate of the test unit is connected to a corresponding word line to be detected through the test switch, a source of the test unit is grounded, and a drain of the test unit is connected to the comparison circuit, and when the test switch is turned on, the comparison circuit outputs a level signal representing a comparison result according to a current output by the drain of the test unit and a reference threshold current.

2. The Nor Flash according to claim 1, characterized in that: The comparison circuit is a current type comparator, which includes a first input terminal, a second input terminal and an output terminal. The first input terminal is connected to the drain of the test unit, the second input terminal is used to connect to a reference threshold current generating circuit, the output terminal of the current type comparator is used to output the level signal, and the reference threshold current generating circuit is used to generate the reference threshold current.

3. The Nor Flash according to claim 2, characterized in that: The comparison circuit is also used for: When the current output by the drain of the test unit is less than the reference threshold current, a low level signal is output. When the current output by the drain of the test unit is greater than or equal to the reference threshold current, a high level signal is output.

4. A method for detecting abnormal word line voltage of Nor Flash, characterized in that: The Nor Flash includes: A memory cell array, comprising a plurality of memory cells, wherein the memory cells in the same row of the memory cell array are connected to the same word line; A voltage source to be detected, used for providing a driving voltage to the word line to be detected; A word line voltage anomaly detection array, comprising a plurality of word line voltage anomaly detection circuits, wherein the word line voltage anomaly detection circuits are connected to the word lines to be detected in a one-to-one correspondence, and the word line voltage anomaly detection circuits comprise a test switch, a test unit and a comparison circuit, wherein a gate of the test unit is connected to a corresponding word line to be detected through the test switch, a source of the test unit is grounded, a drain of the test unit is connected to the comparison circuit, and when the test switch is turned on, the comparison circuit outputs a level signal representing a comparison result according to a current output by the drain of the test unit and a reference threshold current; The word line voltage abnormality detection method comprises: receiving a detection signal, and determining the word line to be detected according to the detection signal; Selecting the voltage source to be detected and adjusting the threshold voltage of the test unit according to a preset detection voltage value; determining the reference threshold current according to the threshold voltage; Controlling the voltage source to be detected to be connected to the word line to be detected, and controlling the test switch corresponding to the word line to be detected to be turned on; The level signal output by the comparison circuit is received, and a detection result of the to-be-detected word line is determined according to the level signal.

5. The word line voltage abnormality detection method according to claim 4, characterized in that: The receiving the detection signal and selecting the to-be-detected word line according to the detection signal comprises: receiving the detection signal; Reading word line address information in the detection signal; The word line to be detected is determined according to the word line address information.

6. The word line voltage abnormality detection method according to claim 4, characterized in that: The step of selecting the voltage source to be detected and adjusting the threshold voltage of the test unit according to the preset detection voltage value includes: Reading a preset first reference table, wherein the first reference table is a table storing a correspondence between the detection voltage, the voltage of the voltage source to be detected, and the threshold voltage of the test unit; deriving, according to the preset detection voltage value, a first voltage value of the voltage source to be detected and a second voltage value of the threshold voltage of the test unit respectively corresponding to the detection voltage value in the first reference table; The voltage source to be detected is selected according to the first voltage value and the threshold voltage of the test unit is adjusted according to the second voltage value.

7. The word line voltage abnormality detection method according to claim 6, characterized in that: The step of determining the reference threshold current according to the threshold voltage comprises: Reading a preset second reference table, where the second reference table is a table storing a corresponding relationship between the threshold voltage and the reference threshold current; The reference threshold current corresponding to the second voltage value in the second reference table is obtained according to the second voltage value.

8. The word line voltage abnormality detection method according to claim 4, characterized in that: The receiving the level signal output by the comparison circuit, and determining the detection result of the to-be-detected word line according to the level signal, comprises: When the level signal is a high level signal, it is determined that there is no abnormality in the voltage on the word line to be detected. When the level signal is a low level signal, it is determined that there is an abnormality in the voltage on the to-be-detected word line.

9. A control device for detecting abnormal word line voltage, characterized in that: comprising at least one processor and a memory for communicatively connecting to the at least one processor; The memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the word line voltage abnormality detection method according to any one of claims 4 to 8.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer-executable instructions, and the computer-executable instructions are used to enable a computer to execute the word line voltage abnormality detection method according to any one of claims 4 to 8.

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