Semiconductor process equipment and control method

Abstract

The present invention discloses a semiconductor process equipment and a control method, wherein the semiconductor process equipment comprises a semiconductor chamber and a process pipeline (100), wherein the semiconductor chamber is connected to the process pipeline (100), and the semiconductor process equipment further comprises a particle detector (200) and an alarm (300); the particle detector (200) is arranged in the process pipeline (100) and is used to detect the amount of particles in the process pipeline (100); the alarm (300) is electrically connected to the particle detector (200); when the amount of particles detected by the particle detector (200) is greater than or equal to a preset amount, the alarm (300) sends an alarm signal to stop the process of the semiconductor process equipment. The above solution can solve the problem of a large number of wafers being contaminated during the process of the semiconductor process equipment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor process equipment and a control method. Background Art

[0002] Semiconductor process equipment includes a semiconductor chamber and a process pipeline. The process pipeline is connected to the semiconductor chamber. The process pipeline is used to introduce process gas into the semiconductor chamber. The process gas is ionized in the semiconductor chamber, thereby realizing processes such as wafer etching.

[0003] However, due to the corrosive effect of process gases on the process pipelines, particles on the inner surface of the process pipelines are easily shed, causing particles to be generated in the process pipelines. The particles will enter the semiconductor chamber along the process pipelines, making it difficult for operators to detect them. As a result, a large amount of particles can easily adhere to the surface of the wafers, causing a large number of wafers to be contaminated. Summary of the Invention

[0004] The invention discloses a semiconductor process equipment and a control method, so as to solve the problem that a large number of wafers are contaminated during the process of the semiconductor process equipment.

[0005] In order to solve the above problems, the present invention adopts the following technical solutions:

[0006] A semiconductor process equipment, comprising a semiconductor chamber and a process pipeline, wherein the semiconductor chamber is connected to the process pipeline, and further comprising a particle detector and an alarm;

[0007] The particle detection component is arranged in the process pipeline and is used to detect the amount of particle matter in the process pipeline. The alarm is electrically connected to the particle detection component. When the amount of particle matter detected by the particle detection component is greater than or equal to a preset amount, the alarm sends an alarm signal to stop the process of the semiconductor process equipment.

[0008] A control method for semiconductor process equipment is applied to the above-mentioned semiconductor process equipment, and the control method includes:

[0009] Detect the amount of particulate matter in process pipelines;

[0010] When the amount of the particulate matter is greater than or equal to a preset amount, the alarm device sends an alarm signal;

[0011] The process is stopped according to the alarm signal.

[0012] The technical solution adopted by the present invention can achieve the following beneficial effects:

[0013] In the semiconductor process equipment disclosed in the present invention, when the number of particulate matter in the process pipeline exceeds a preset number, the alarm sends an alarm signal to remind the operator. When the operator finds that the number of particulate matter in the process pipeline exceeds the standard, the operator immediately stops the process, thereby avoiding a large number of wafers from being contaminated, thereby improving the process performance of the semiconductor process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0015] Figure 1 A schematic structural diagram of a semiconductor process equipment disclosed in an embodiment of the present invention;

[0016] Figures 2 to 7 A schematic structural diagram of some components of a semiconductor process equipment disclosed in an embodiment of the present invention;

[0017] Figure 8 A schematic diagram of the circuit structure of a particle detection component of semiconductor process equipment disclosed in an embodiment of the present invention;

[0018] Figure 9 This is a schematic diagram of the circuit structure of an infrared sensor of a particle detection component in semiconductor process equipment disclosed in an embodiment of the present invention;

[0019] Figure 10 This is a schematic diagram of the circuit structure of the first counter and the second counter of the particle detector in the semiconductor process equipment disclosed in an embodiment of the present invention;

[0020] Figure 11 A schematic diagram of the circuit structure of a reset element of a particle detection element in a semiconductor process equipment disclosed in an embodiment of the present invention;

[0021] Figure 12 A schematic diagram of the circuit structure of an alarm in a semiconductor process equipment disclosed in an embodiment of the present invention;

[0022] Figure 13 This is a flow chart of a control method for semiconductor process equipment disclosed in an embodiment of the present invention.

[0023] Description of reference numerals:

[0024] 100-process pipeline, 101-through hole, 102-mounting boss, 103-first mounting plate, 1031-accommodating groove, 1032-first mounting hole, 104-second mounting plate, 1041-second mounting hole, 105-sealing ring, 110-main pipeline, 120-first branch pipeline, 130-second branch pipeline, 140-proportional valve,

[0025] 200-particle detection element, 201-protrusion, 210-infrared sensor, 220-first counter, 230-second counter, 240-reset element, 250-first driver chip, 260-second driver chip, 270-first digital tube, 280-second digital tube, 291-first NAND gate chip, 292-second NAND gate chip,

[0026] 300-alarm,

[0027] 410-connecting pipe, 420-filter,

[0028] 500-heater,

[0029] 600-control valve, 610-first valve, 620-second valve. DETAILED DESCRIPTION

[0030] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0031] The technical solutions disclosed in various embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0032] like Figures 1 to 12 As shown, an embodiment of the present invention discloses a semiconductor process equipment, which includes a semiconductor chamber, a process pipeline 100 , a particle detector 200 and an alarm 300 .

[0033] The semiconductor chamber is the main structure of semiconductor processing equipment, where wafers are processed. The semiconductor chamber is connected to a process line 100, which is used to supply process gases to the semiconductor chamber. For example, when a wafer undergoes an etching process within the semiconductor chamber, process line 100 supplies process gases to the semiconductor chamber. The process gases are ionized within the semiconductor chamber, forming a plasma to carry out the etching process.

[0034] The particle detector 200 is installed in the process pipeline 100 and is used to detect the amount of particulate matter in the process pipeline 100. The alarm 300 is electrically connected to the particle detector 200. When the amount of particulate matter detected by the particle detector 200 is greater than or equal to a preset number, the alarm 300 issues an alarm signal to stop the process equipment.

[0035] In the embodiment disclosed in the present application, when the number of particulate matter in the process pipeline 100 exceeds a preset number, the alarm 300 sends an alarm signal to remind the operator. When the operator finds that the number of particulate matter in the process pipeline 100 exceeds the standard, the operator immediately stops the process to avoid contamination of a large number of wafers.

[0036] At the same time, stopping the process in time can prevent a large number of wafers from being contaminated, prevent the waste of raw materials, and avoid large economic losses.

[0037] In the embodiment disclosed in the present application, when the operator finds that the amount of particulate matter in the process pipeline 100 exceeds the standard, the operator can stop the process and clean the particulate matter in the process pipeline 100, thereby enabling the particulate matter in the process pipeline 100 to be cleaned in a timely manner to improve the processing quality of the wafer, thereby improving the process performance of the semiconductor process equipment.

[0038] Alternatively, the particle detector 200 may be an infrared sensor 210. The infrared sensor 210 emits infrared light, which is reflected by the particles. The infrared sensor 210 then receives the reflected light. Therefore, the reflected light received by the infrared sensor 210 can be used to determine the number of particles. Alternatively, the particle detector 200 may be a particle counter. The specific operating principles of a particle counter are well known and will not be described in detail herein. Of course, the particle detector 200 may also have other structures, which are not limited herein.

[0039] In the above embodiment, when the operator discovers that the amount of particulate matter in the process pipeline 100 exceeds the standard, the operator can stop the process and then clean the particulate matter in the process pipeline 100. Specifically, the process pipeline 100 can be connected to a purge gas source, and the purge gas can be blown into the process pipeline 100 to purge the particulate matter in the process pipeline 100. Optionally, the purge gas can be an inert gas such as nitrogen or argon.

[0040] Specifically, when purging the process pipeline 100 , the inlet pressure of the purge gas may be 0.34 MPa, the outlet pressure may be 0.1 MPa, and the flow rate may be 14.4 L / h.

[0041] However, when the purge gas is purged through the process line 100, particulate matter can be easily purged into the semiconductor chamber, causing contamination of the semiconductor chamber. To this end, in another optional embodiment, the process line 100 can be provided with a control valve 600, which is used to control the connection between the process line 100 and the semiconductor chamber. The semiconductor process equipment disclosed in the present application can also include a connecting line 410 and a filter 420. The connecting line 410 has a first end and a second end, and the first end and the second end are both connected to the process line 100. In this case, the connecting line 410 and the process line 100 form a loop. The control valve 600 can be located between the first end and the second end.

[0042] During the specific operation, when the process pipeline 100 is purged, purge gas is introduced into the process pipeline 100 and the control valve 600 is closed. At this time, the purge gas carries particulate matter into the connecting pipeline 410. A filter 420 is provided in the connecting pipeline 410 to filter the particulate matter and prevent the particulate matter from entering the semiconductor chamber.

[0043] In the above embodiment, when the particulate matter is purged, the particulate matter is easily cooled and condensed on the inner wall of the process pipeline 100, resulting in a poor purging effect.

[0044] Based on this, in another optional embodiment, the semiconductor process equipment may further include a heater 500, which may be disposed in the process line 100 and may be used to heat at least a portion of the process line 100. In this solution, the heater 500 can heat the process line 100, thereby preventing particulate matter from condensing on the inner wall of the process line 100 due to cold, thereby achieving a better purge effect on the process line 100.

[0045] Specifically, the heater 500 can be used to heat the process pipeline 100 to a temperature between 60° C. and 70° C., thereby preventing the particles from condensing.

[0046] Optionally, the heater 500 may be a heating structure such as a heating wire or a heating rod, and of course may also be other heating structures, which is not limited herein.

[0047] In the above embodiment, in order to improve process uniformity in the semiconductor chamber, the gas flow rate in the center and edge areas of the semiconductor chamber needs to be the same. Therefore, the process pipeline 100 needs to supply process gas to both the center and edge areas of the semiconductor chamber.

[0048] To this end, in another optional embodiment, the process pipeline 100 may include a main pipeline 110, a first branch pipeline 120, a second branch pipeline 130, and a proportional valve 140. The main pipeline 110 is connected to the first branch pipeline 120 and the second branch pipeline 130 through the proportional valve 140. The first branch pipeline 120 and the second branch pipeline 130 are both connected to the semiconductor chamber. The first branch pipeline 120 is used to supply gas to the central area of ​​the semiconductor chamber, and the second branch pipeline 130 is used to supply gas to the edge area of ​​the semiconductor chamber. The control valve 600 may include a first valve 610 and a second valve 620. The first valve 610 may be set on the first branch pipeline 120, and the second valve 620 may be set on the second branch pipeline 130. This solution can achieve the supply of process gas to both the central area and the edge area of ​​the semiconductor chamber.

[0049] At this time, the first branch line 120 and the second branch line 130 are both connected to the semiconductor chamber, so the above-mentioned particle detector 200 and alarm 300 can be installed on the first branch line 120 and the second branch line 130. One particle detector 200 can be installed in the first branch line 120 and located between the first valve 610 and the proportional valve 140. The other particle detector 200 can be installed in the second branch line 130 and located between the second valve 620 and the proportional valve 140.

[0050] In addition, there are two communicating pipes 410 and two filters 420 , one communicating pipe 410 is connected to the first branch pipe 120 , and the other communicating pipe 410 is connected to the second branch pipe 130 .

[0051] In the above embodiment, the detection end of the particle detection component 200 needs to be installed in the process pipeline 100. It is difficult to install the particle detection component 200 as a whole in the process pipeline 100. In addition, the particle detection component 200 will also occupy a larger space in the process pipeline 100, causing greater wind resistance, thereby reducing the efficiency of process gas introduction.

[0052] Based on this, in another optional embodiment, the outer wall of the process pipeline 100 can be provided with a through hole 101, and the detection end of the particle detection component 200 can be extended into the process pipeline 100 through the through hole 101. In this solution, the particle detection component 200 does not need to be fully extended into the process pipeline 100, and only the detection end can be extended into the process pipeline 100. As a result, the particle detection component 200 occupies less space in the process pipeline 100, and thus the wind resistance in the process pipeline 100 is reduced, making the efficiency of the process gas introduction higher. In addition, the particle detection component 200 does not need to be fully installed in the process pipeline 100, and only the detection end can be extended into the process pipeline 100. Therefore, the assembly difficulty of the particle detection component 200 and the process pipeline 100 is relatively small.

[0053] In the above embodiment, the particle detector 200 can be fixed on the process pipeline 100. However, when the particle detector 200 is fixed to the process pipeline 100, a threaded hole needs to be opened on the process pipeline 100, which can easily cause leakage in the process pipeline 100.

[0054] In another optional embodiment, the outer surface of the process pipeline 100 may be provided with a mounting boss 102, with the through hole 101 extending through the mounting boss 102. The particle detector 200 may be fixed to the mounting boss 102. In this embodiment, the mounting boss 102 provided on the outer surface of the process pipeline 100 effectively thickens the wall of this portion of the process pipeline 100, thereby reducing the risk of leakage when threaded holes or other fixing structures are provided.

[0055] In another optional embodiment, the semiconductor process equipment may further include a first mounting plate 103 and a second mounting plate 104, wherein the first mounting plate 103 may be provided with a first mounting hole 1032, and the second mounting plate 104 may be provided with a second mounting hole 1041. The first mounting plate 103 may be mounted on the mounting boss 102, and the second mounting plate 104 may be arranged on the side of the second mounting plate 104 facing away from the mounting boss 102. The first mounting hole 1032, the second mounting hole 1041 and the through hole 101 are all connected. The detection end of the particle detection component 200 extends into the process pipeline 100 through the second mounting hole 1041, the first mounting hole 1032 and the through hole 101 in sequence. A protrusion 201 is provided on the outer wall of the particle detection component 200, and the protrusion 201 can be clamped between the first mounting plate 103 and the second mounting plate 104 to fix the particle detection component 200.

[0056] In this solution, the first mounting plate 103 and the second mounting plate 104 can clamp the protrusion 201, thereby enabling installation of the particle detector 200. Furthermore, by employing the installation method in which the first mounting plate 103 and the second mounting plate 104 clamp the protrusion 201, the first mounting plate 103 and the second mounting plate 104 can also position the installation position of the particle detector 200, thereby improving the installation accuracy of the particle detector 200 and the process pipeline 100.

[0057] Optionally, the first mounting plate 103 and the second mounting plate 104 may be connected by bolts, and the first mounting plate 103 and the mounting protrusion 201 may also be connected by bolts.

[0058] like Figure 2 and Figure 6As shown, in another optional embodiment, a receiving groove 1031 is defined on the side of the first mounting plate 103 facing the second mounting plate 104. The first mounting hole 1032 can extend through the bottom of the receiving groove 1031, and at least a portion of the protrusion 201 is located within the receiving groove 1031. In this embodiment, the first mounting hole 1032 and the receiving groove 1031 form a stepped hole structure, with the protrusion 201 overlapping the stepped surface of the stepped hole. In this case, the stacking height of the particle detector 200 and the process pipeline 100 is reduced, thereby making it less likely for the particle detector 200 to interfere with other components of the semiconductor process equipment.

[0059] In another optional embodiment, the semiconductor process equipment may further include a sealing ring 105, which is mounted on the outer wall of the particle detection component 200. The outer wall of the particle detection component 200 and the through hole 101 may be sealed by the sealing ring 105. This solution can prevent process gas leakage, thereby improving the sealing performance of the process pipeline 100.

[0060] This application discloses a specific structure of a particle detection element 200, which can of course also be other structures and is not limited herein. Figure 8 As shown, the particle detection element 200 may include an infrared sensor 210, a first counter 220, a second counter 230, and a reset element 240. The infrared sensor 210 may be used to receive reflected light from particles and output a counting signal based on the reflected light. The first counter 220 and the second counter 230 receive the counting signal and count. The first counter 220 is used to record the units digit of the number of particles, the second counter 230 is used to record the tens digit of the number of particles, and the reset element 240 is used to clear the first counter 220 and the second counter 230. The circuit diagram of the infrared sensor 210, the first counter 220, the second counter 230, and the reset element 240 is shown in FIG. Figure 9 、 Figure 10 and Figure 11 shown.

[0061] During specific operation, the infrared sensor 210 includes a transmitter and a receiver. The transmitter is used to emit infrared light, and the receiver is used to receive reflected light. When the infrared sensor 210 receives reflected light, it outputs an electrical signal. The first counter 220 receives the electrical signal and increments the recorded number by 1. When the number recorded by the first counter 220 reaches 9, the first counter 220 receives another electrical signal and sends a carry signal to the second counter 230, which increments the number recorded by the second counter 230 by 1. When the particulate matter detector 200 needs to be retested, the reset element 240 can reset the first counter 220 and the second counter 230, causing them to restart counting.

[0062] In this solution, the particle detection element 200 has a simple structure and is easy to manufacture, so that the manufacturing cost of the particle detection element 200 is low.

[0063] like Figure 8 As shown, the reset element 240 is connected to the LOAD or CLR pins of the first counter 220 and the second counter 230. When the switch s1 of the reset element 240 is closed, the LOAD or CLR pin receives a high level, so that the counts of the first counter 220 and the second counter 230 are reset.

[0064] In another optional embodiment, the particle detector 200 may further include a first driver chip 250, a second driver chip 260, a first digital tube 270, and a second digital tube 280. The first driver chip 250 may be electrically connected to the first counter 220, which may be connected to the first digital tube 270. The first digital tube 270 may be used to display the number recorded by the first counter 220. The second driver chip 260 may be electrically connected to the second counter 230, which may be electrically connected to the second digital tube 280. The second digital tube 280 may be used to display the number recorded by the second counter 230. In this embodiment, the second digital tube 280 displays the tens digit, and the first digital tube 270 displays the units digit. Therefore, the first and second digital tubes 270, 280 can accurately read the number of particulate matter, allowing operators to obtain real-time information about the number of particulate matter in the process pipeline 100, enabling rapid response to changes in the semiconductor process equipment, further improving the process performance of the semiconductor process equipment.

[0065] In another optional embodiment, the alarm 300 and the second driver chip 260 can be electrically connected via a first NAND gate chip 291. When both input terminals of the first NAND gate chip 291 are high, the output terminal of the first NAND gate chip 291 outputs a low level, causing the alarm 300 to issue an alarm signal. In this solution, compared to using a simple AND gate chip or a NAND gate chip, the first NAND gate chip 291 can save equipment, has a relatively simple circuit structure, and responds quickly. Optionally, the first NAND gate chip 291 can use a NAND gate chip such as 74ls00, 74LS20, or other NAND gate chips, which are not limited herein.

[0066] In the above embodiment, the first NAND gate chip 291 is a combination of an AND gate logic circuit and a NOT gate logic circuit. The specific circuit structure of the first NAND gate chip 291 is a well-known technology and will not be described in detail herein.

[0067] Alternatively, as Figure 12As shown, the alarm 300 may include a transistor and a buzzer. The transistor is electrically connected to the second driver chip 260 via a first NAND gate chip 291, and the transistor and the buzzer are electrically connected. When the number of particulate matter has not reached a preset number, the transistor is not turned on, and the buzzer does not sound an alarm. When the number of particulate matter is greater than or equal to the preset number, the first NAND gate chip 291 outputs a low level, the transistor is turned on, and the buzzer sounds an alarm signal. Of course, the above-mentioned alarm 300 is not limited to a buzzer and can also be a warning light or other structure, which is not limited herein.

[0068] In the above embodiment, the particle detection element may further include a second NAND gate chip 292. Optionally, the second NAND gate chip 292 may be a NAND gate chip such as 74ls00, 74LS20, or other NAND gate chips, which is not limited herein.

[0069] like Figure 8 As shown, infrared sensor 210 is electrically connected to one input terminal of second NAND chip 292. When infrared sensor 210 receives reflected light, one input terminal of second NAND chip 292 receives a high level. The other input terminal of second NAND chip 292 is connected to the output terminal of first NAND chip 291. Because the QA and QB pins of second counter 230 both output a low level when the number of particulate matter has not reached a preset level, first NAND chip 291 outputs a high level. At this time, both input terminals of second NAND chip 292 are high, so the output terminal of second NAND chip 292 outputs a low level. The output terminal of second NAND chip 292 is electrically connected to a pin of first counter 220. When first counter 220 receives a low level, the first counter records the number plus 1 and displays it on first digital tube 270. When the number recorded by first counter 220 reaches 9, the electrical signal received by first counter 220 sends a carry signal to second counter 230, increasing the number recorded by second counter 230 by 1 and displaying it on second digital tube 280. When the number of particulate matter reaches a preset number, the QA and QB pins of the second counter both output a high level, and the first NAND gate chip 291 outputs a low level, turning on the transistor and causing the buzzer to sound an alarm.

[0070] Figure 8 is a circuit diagram of the particle detection element 200, Figure 8 The middle mark shows the connection relationship of some pins of each component of the particle detection element 200. Of course, different chips can be specifically connected according to actual conditions, which will not be described in detail herein.

[0071] Based on the semiconductor process chamber of any of the above embodiments of the present invention, the embodiment of the present invention further discloses a control method, and the semiconductor process equipment described above can apply the disclosed control method, such as Figure 13As shown, the control method includes:

[0072] S100 , detecting the amount of particulate matter in the process pipeline 100 .

[0073] The particle detection component 200 is started and obtains a value within a period of time. This value is the amount of particles in the process pipeline 100.

[0074] S200 , when the amount of particulate matter is greater than or equal to a preset amount, the alarm 300 sends an alarm signal.

[0075] The preset number here can be 30, and of course it can be other values, which is not limited in this article.

[0076] S300: Stop the process according to the alarm signal.

[0077] When the operator receives the alarm signal, the operator needs to stop the process immediately.

[0078] In the embodiment disclosed in the present application, when the number of particulate matter in the process pipeline 100 exceeds a preset number, the alarm 300 sends an alarm signal to remind the operator. When the operator finds that the number of particulate matter in the process pipeline 100 exceeds the standard, the operator immediately stops the process to avoid contamination of a large number of wafers.

[0079] At the same time, stopping the process in time can prevent a large number of wafers from being contaminated, prevent the waste of raw materials, and avoid large economic losses.

[0080] In another optional embodiment, after step S300, the following steps are further included:

[0081] S400, taking out the wafer.

[0082] Because the amount of particles in the wafer being processed exceeds the standard, the wafer processing fails and the wafer in the semiconductor chamber needs to be removed.

[0083] S500 , purging the process pipeline 100 .

[0084] At this time, the particulate matter in the process pipeline 100 is blown away.

[0085] S600 , control the particle detection element 200 to reset and release the alarm signal.

[0086] The reading of the particle detection element 200 is cleared, and the alarm signal is released to prepare for the next detection.

[0087] S700 , detecting the amount of particulate matter in the process pipeline 100 again.

[0088] After the purging is completed, the process pipeline 100 is tested again. If an alarm signal is still issued, steps S500 to S700 are repeated multiple times. If an alarm is still issued after multiple cycles, it means that the process pipeline 100 is severely corroded and needs to be replaced.

[0089] In this solution, the particulate matter in the process pipeline 100 can be purged, thereby facilitating the cleaning of the particulate matter.

[0090] In the above embodiment, during the process of purging the process line 100 , particles are easily purged into the semiconductor chamber, causing contamination of the semiconductor chamber.

[0091] To this end, in another optional embodiment, a closed control valve 600 may be included in the purge process pipeline 100, allowing the purge gas to enter the connecting pipeline to filter particulate matter in the process pipeline. When the control valve 600 includes the first valve 610 and the second valve 620 described above, the first valve 610 and the second valve 620 are closed simultaneously.

[0092] In this solution, when purging the process pipeline 100, purge gas is introduced into the process pipeline 100 and the control valve 600 is closed. At this time, the purge gas carries particulate matter into the connecting pipeline 410. A filter 420 is provided in the connecting pipeline 410 to filter the particulate matter and prevent the particulate matter from entering the semiconductor chamber.

[0093] In the above embodiment, when the particulate matter is purged, the particulate matter is easily cooled and condensed on the inner wall of the process pipeline 100, resulting in a poor purging effect.

[0094] Based on this, in another optional embodiment, the purging of the process pipeline may further include turning on a heater 500 to heat at least a portion of the process pipeline 100 .

[0095] In this solution, the heater 500 can heat the process pipeline 100 , thereby preventing particulate matter from condensing onto the inner wall of the process pipeline 100 , thereby achieving a better purge effect of the process pipeline 100 .

[0096] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0097] The foregoing is merely an embodiment of the present invention and is not intended to limit the present invention. It will be apparent to those skilled in the art that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention are intended to be included within the scope of the claims of the present invention.

Claims

1. A semiconductor process equipment, comprising a semiconductor chamber and a process pipeline (100), wherein the semiconductor chamber is connected to the process pipeline (100), characterized in that: The semiconductor process equipment further comprises a particle detection component (200) and an alarm (300); The particle detection component (200) is arranged on the process pipeline (100), the process pipeline (100) is used to pass process gas into the semiconductor chamber, the particle detection component (200) is used to detect the amount of particle in the process pipeline (100), the alarm (300) is electrically connected to the particle detection component (200), and when the amount of particle detected by the particle detection component (200) is greater than or equal to a preset amount, the alarm (300) sends an alarm signal to stop the process of the semiconductor process equipment; A through hole (101) is provided on the outer wall of the process pipeline (100), and a detection end of the particle detection element (200) extends into the process pipeline (100) through the through hole (101); The outer surface of the process pipeline (100) is provided with a mounting boss (102), and the through hole (101) passes through the mounting boss (102); The semiconductor process equipment further comprises a first mounting plate (103) and a second mounting plate (104), wherein the first mounting plate (103) is provided with a first mounting hole (1032), and the second mounting plate (104) is provided with a second mounting hole (1041), the first mounting plate (103) is mounted on the mounting boss (102), and the second mounting plate (104) is arranged on a side of the second mounting plate (104) away from the mounting boss (102), the first mounting hole (1032), the second mounting hole (1041) and the through hole (101) are all connected, and the detection end of the particle detector (200) extends into the process pipeline (100) through the second mounting hole (1041), the first mounting hole (1032) and the through hole (101) in sequence; A protrusion (201) is provided on the outer side wall of the particle detection component (200), and the protrusion (201) is clamped between the first mounting plate (103) and the second mounting plate (104) to fix the particle detection component (200).

2. The semiconductor process equipment according to claim 1, wherein: The process pipeline (100) is provided with a control valve (600), and the semiconductor process equipment further includes a connecting pipeline (410) and a filter (420), the connecting pipeline (410) has a first end and a second end, the first end and the second end are both connected to the process pipeline (100), the control valve (600) is located between the first end and the second end, and the filter (420) is provided in the connecting pipeline (410).

3. The semiconductor process equipment according to claim 2, wherein: The semiconductor process equipment further comprises a heater (500), wherein the heater (500) is arranged on the process pipeline (100) and is used to heat at least a portion of the process pipeline (100).

4. The semiconductor process equipment according to claim 1, wherein: A receiving groove (1031) is provided on one side of the first mounting plate (103) facing the second mounting plate (104), the first mounting hole (1032) passes through the bottom of the receiving groove (1031), and at least a portion of the protrusion (201) is located in the receiving groove (1031).

5. The semiconductor process equipment according to claim 1, wherein: The semiconductor process equipment further comprises a sealing ring (105), wherein the sealing ring (105) is sleeved on the outer wall of the particle detection component (200), and the outer wall of the particle detection component (200) and the side wall of the through hole (101) are sealed and connected via the sealing ring (105).

6. The semiconductor process equipment according to claim 1, wherein: The particle detection element (200) comprises an infrared sensor (210), a first counter (220), a second counter (230) and a reset element (240), wherein the infrared sensor (210) is used to receive reflected light from the particle and output a counting signal according to the reflected light, the first counter (220) and the second counter (230) receive the counting signal and count, the first counter (220) is used to record the units digit of the number of the particle, the second counter (230) is used to record the tens digit of the number of the particle, and the reset element (240) is used to clear the first counter (220) and the second counter (230).

7. The semiconductor process equipment according to claim 6, wherein: The particle detection element (200) further includes a first driving chip (250), a second driving chip (260), a first digital tube (270), and a second digital tube (280), wherein the first driving chip (250) is electrically connected to the first counter (220), the first driving chip (250) is connected to the first digital tube (270), the first digital tube (270) is used to display the number recorded by the first counter (220), the second driving chip (260) is electrically connected to the second counter (230), the second driving chip (260) is electrically connected to the second digital tube (280), and the second digital tube (280) is used to display the number recorded by the second counter (230).

8. The semiconductor process equipment according to claim 7, wherein: The particle detection element (200) further includes a first NAND gate chip (291), and the alarm (300) is electrically connected to the second driving chip (260) via the first NAND gate chip (291). When both input terminals of the first NAND gate chip (291) are at a high level, the output terminal of the first NAND gate chip (291) outputs a low level, so that the alarm (300) emits an alarm signal.

9. A method for controlling semiconductor process equipment, characterized in that: Applied to the semiconductor process equipment according to any one of claims 1 to 8, the control method comprises: Detecting the amount of particulate matter in the process pipeline (100); When the amount of the particulate matter is greater than or equal to a preset amount, the alarm (300) sends an alarm signal; The process is stopped according to the alarm signal.

10. The control method according to claim 9, characterized in that: After stopping the process according to the alarm signal, the method further includes: Remove the wafer; Purging the process pipeline (100); Controlling the particle detection element (200) to reset to zero and release the alarm signal; The amount of particulate matter in the process pipeline (100) is detected again.

11. The control method according to claim 10, characterized in that: The process pipeline (100) is provided with a control valve (600), and the semiconductor process equipment further comprises a connecting pipeline (410) and a filter (420), the connecting pipeline (410) having a first end and a second end, the first end and the second end both being connected to the process pipeline (100), the control valve (600) being located between the first end and the second end, and the filter (420) being provided in the connecting pipeline (410); Purging the process line includes: The control valve (600) is closed, and the purge gas enters the connecting pipeline (410) to filter the particulate matter in the process pipeline (100).

12. The control method according to claim 11, characterized in that: The semiconductor process equipment further comprises a heater (500), wherein the heater (500) is arranged on the process pipeline (100) and is used to heat at least a portion of the process pipeline (100); Purging the process pipeline also includes: The heater (500) is turned on to heat at least a portion of the process line (100).

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